High-current driving circuit of MOS (Metal Oxide Semiconductor) tube

Abstract

The utility model discloses a high-current driving circuit of an MOS (Metal Oxide Semiconductor) tube, which is characterized by comprising an MOS tube driving circuit, a PWM (Pulse-Width Modulation) voltage conversion circuit, a delay power-on circuit and a DC / DC (Direct Current / Direct Current) power supply circuit, the DC / DC power supply circuit is electrically connected with the time-delay power-on circuit, the time-delay power-on circuit is electrically connected with the PWM voltage conversion circuit, and the PWM voltage conversion circuit is electrically connected with the MOS tube driving circuit; the MOS tube driving circuit comprises an output port, a pin 2 of the output port is electrically connected with a pin D of an MOS tube Q6, and a pin 3 of the output port is electrically connected with a pin D of an MOS tube Q7. The utility model relates to the technical field of control circuits, in particular to a high-current driving circuit of an MOS (Metal Oxide Semiconductor) tube. The technical problem to be solved by the utility model is to provide the high-current driving circuit of the MOS tube, which not only can meet the high-power output requirement of the MOS tube, but also has the advantages of small internal resistance, small heat productivity and low probability of damage of the MOS tube, and the service life of the MOS tube is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of control circuits, in particular to a high-current driving circuit for a MOS tube. Background Art

[0002] LED lamps, also known as LED lighting fixtures, refer to appliances that can transmit, distribute and change the light distribution of LED light sources. They include all parts and components required to fix and protect the LED light source in addition to the LED light source, as well as the line accessories necessary to connect to the power supply.

[0003] As the driving circuits of LED lamp controllers on the market currently all use 3.3V voltage to drive MOS tubes, the internal resistance of the MOS tubes is large, the heat generated is large, and the MOS tubes are easily damaged. The output power of the MOS tubes cannot be very large, and can only be small power output, which cannot meet the requirements of high power output. Utility Model Content

[0004] The technical problem to be solved by the utility model is to provide a high-current driving circuit for a MOS tube, which can not only meet the high-power output requirements of the MOS tube, but also has a small internal resistance and a small heat generation of the MOS tube, is not easy to damage the MOS tube, and improves the service life of the MOS tube.

[0005] The utility model adopts the following technical solutions to achieve the invention purpose:

[0006] A high-current driving circuit for a MOS tube, characterized in that it comprises: a MOS tube driving circuit, a PWM voltage conversion circuit, a delayed power-on circuit and a DC / DC power supply circuit; the DC / DC power supply circuit is electrically connected to the delayed power-on circuit, the delayed power-on circuit is electrically connected to the PWM voltage conversion circuit, and the PWM voltage conversion circuit is electrically connected to the MOS tube driving circuit; the MOS tube driving circuit comprises an output port, pin 2 of the output port is electrically connected to pin D of a MOS tube Q6, pin 3 of the output port is electrically connected to pin D of a MOS tube Q7, pin 4 of the output port is electrically connected to pin D of a MOS tube Q8, Pin 5 of the output port is electrically connected to pin D of the MOS tube Q9, and pin 6 of the output port is electrically connected to pin D of the MOS tube Q10; pin G of the MOS tube Q6 is electrically connected to one end of the resistor R12, pin G of the MOS tube Q7 is electrically connected to one end of the resistor R13, pin G of the MOS tube Q8 is electrically connected to one end of the resistor R14, pin G of the MOS tube Q9 is electrically connected to one end of the resistor R15, and pin G of the MOS tube Q10 is electrically connected to one end of the resistor R16, and the other ends of the resistors R12, R13, R14, R15, and R16 are grounded respectively.

[0007] As a further limitation of the present technical solution, the DC / DC power supply circuit includes a chip U1, a chip U2 and a chip U4, the pin 2 of the chip U1 is electrically connected to one end of the capacitor C2 and the capacitor EC2, and the other end of the capacitor C2 and the capacitor EC2 is grounded, the pin 3 of the chip U1 is electrically connected to one end of the resistor R20, the pin 3 of the chip U4 and one end of the capacitor EC5, and the other end of the capacitor EC5 is grounded, the pin 1 of the chip U4 is electrically connected to the capacitor C9, the capacitor EC1, the resistor R2, the resistor R1, one end of the inductor L1 and the other end of the resistor R20, and the Capacitor C9, the capacitor EC1 and the other end of the resistor R2 are grounded, pin 1 of the chip U2 is electrically connected to resistor R3, one end of capacitor C4 and the other end of the resistor R1, the other end of the resistor R3 and the capacitor C4 are grounded, pin 3 of the chip U2 is electrically connected to capacitor EC4, capacitor C3 and one end of capacitor EC3, the capacitor EC4, the capacitor C3 and the other end of the capacitor EC3 are grounded, pin 4 of the chip U2 is electrically connected to one end of capacitor C1 and the other end of the inductor L1, and pin 5 of the chip U2 is electrically connected to the other end of the capacitor C1.

[0008] As a further limitation of the present technical solution, the delayed power-on circuit includes a chip U3, pin 2 of the chip U3 is electrically connected to capacitor C5, resistor R9, one end of diode D1 and pin 6 of chip U3, the other end of resistor R9 and diode D1 is grounded, and pin 4 and pin 8 of the chip U3 and the other end of the capacitor C5 are electrically connected to pin 1 of the chip U4 respectively.

[0009] As a further limitation of the present technical solution, the PWM voltage conversion circuit includes a MOS tube Q1, a MOS tube Q2, a MOS tube Q3, a MOS tube Q4 and a MOS tube Q5, wherein the pin 1 of the MOS tube Q1, the pin 1 of the MOS tube Q2, the pin 1 of the MOS tube Q3, the pin 1 of the MOS tube Q4 and the pin 1 of the MOS tube Q5 are respectively electrically connected to the pin 2 of the chip U1, the pin 3 of the MOS tube Q1 is electrically connected to one end of the resistor R4 and the pin G of the MOS tube Q10, the other end of the resistor R4 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q2 is electrically connected to the pin G of the resistor R5, and the other end of the resistor R4 is electrically connected to the pin 3 of the chip U3. One end of the resistor R5 is electrically connected to pin 3 of the chip U3, pin 3 of the MOS tube Q3 is electrically connected to one end of the resistor R6 and pin G of the MOS tube Q8, the other end of the resistor R6 is electrically connected to pin 3 of the chip U3, pin 3 of the MOS tube Q4 is electrically connected to one end of the resistor R7 and pin G of the MOS tube Q7, the other end of the resistor R7 is electrically connected to pin 3 of the chip U3, pin 3 of the MOS tube Q5 is electrically connected to one end of the resistor R8 and pin G of the MOS tube Q6, and the other end of the resistor R8 is electrically connected to pin 3 of the chip U3.

[0010] As a further limitation of the present technical solution, the PWM voltage conversion circuit also includes a chip U5, pin 2 of the MOS tube Q1 is electrically connected to pin 14 of the chip U5, pin 2 of the MOS tube Q2 is electrically connected to pin 31 of the chip U5, pin 2 of the MOS tube Q3 is electrically connected to pin 22 of the chip U5, pin 2 of the MOS tube Q4 is electrically connected to pin 23 of the chip U5, pin 2 of the MOS tube Q5 is electrically connected to pin 24 of the chip U5, pins 9, 18 and 19 of the chip U5 are electrically connected to pin 2 of the chip U1 respectively, pin 9 of the chip U5 is electrically connected to one end of the capacitor C7, pin 18 of the chip U5 is electrically connected to one end of the capacitor C20, pin 19 of the chip U5 is electrically connected to one end of the capacitor C21, and the other ends of the capacitor C7, the capacitor C20 and the capacitor C21 are grounded respectively.

[0011] As a further limitation of the present technical solution, pin 3 of the chip U2 is electrically connected to a +12V / 24V power supply.

[0012] As a further limitation of the technical solution, pin 1 of the output port outputs +12V / 24V. .

[0013] Compared with the related art, the high current driving circuit of a MOS tube provided by the utility model has the following beneficial effects:

[0014] The utility model can not only meet the high-power output requirements of the MOS tube, but also has a small internal resistance and a small heat generation of the MOS tube, is not easy to damage the MOS tube, and prolongs the service life of the MOS tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of a DC / DC power supply circuit of the present utility model.

[0016] Figure 2 It is a schematic diagram of the delayed power-on circuit of the utility model.

[0017] Figure 3 The PWM voltage conversion circuit of the utility model is shown in FIG. Figure 1 .

[0018] Figure 4 The PWM voltage conversion circuit of the utility model is shown in FIG. Figure 2 .

[0019] Figure 5 This is a schematic diagram of the MOS tube driving circuit of the utility model. DETAILED DESCRIPTION

[0020] The utility model is further described below in conjunction with the accompanying drawings and implementation modes.

[0021] A high-current driving circuit for a MOS tube, comprising: a MOS tube driving circuit, a PWM voltage conversion circuit, a delayed power-on circuit and a DC / DC power supply circuit; the DC / DC power supply circuit is electrically connected to the delayed power-on circuit, the delayed power-on circuit is electrically connected to the PWM voltage conversion circuit, and the PWM voltage conversion circuit is electrically connected to the MOS tube driving circuit; the MOS tube driving circuit comprises an output port, pin 2 of the output port is electrically connected to pin D of a MOS tube Q6, pin 3 of the output port is electrically connected to pin D of a MOS tube Q7, pin 4 of the output port is electrically connected to pin D of a MOS tube Q8, and the Pin 5 of the output port is electrically connected to pin D of the MOS tube Q9, and pin 6 of the output port is electrically connected to pin D of the MOS tube Q10; pin G of the MOS tube Q6 is electrically connected to one end of the resistor R12, pin G of the MOS tube Q7 is electrically connected to one end of the resistor R13, pin G of the MOS tube Q8 is electrically connected to one end of the resistor R14, pin G of the MOS tube Q9 is electrically connected to one end of the resistor R15, and pin G of the MOS tube Q10 is electrically connected to one end of the resistor R16, and the other ends of the resistors R12, R13, R14, R15, and R16 are grounded respectively.

[0022] The DC / DC power supply circuit includes a chip U1, a chip U2 and a chip U4, wherein the pin 2 of the chip U1 is electrically connected to one end of the capacitor C2 and the capacitor EC2, and the other end of the capacitor C2 and the capacitor EC2 is grounded, the pin 3 of the chip U1 is electrically connected to one end of the resistor R20, the pin 3 of the chip U4 and one end of the capacitor EC5, and the other end of the capacitor EC5 is grounded, the pin 1 of the chip U4 is electrically connected to the capacitor C9, the capacitor EC1, the resistor R2, the resistor R1, one end of the inductor L1 and the other end of the resistor R20, the capacitor C9, the resistor EC1, the resistor R2, the resistor R1, one end of the inductor L1 and the other end of the resistor R20, Capacitor EC1 and the other end of the resistor R2 are grounded, pin 1 of the chip U2 is electrically connected to resistor R3, one end of capacitor C4 and the other end of the resistor R1, the other end of the resistor R3 and the capacitor C4 are grounded, pin 3 of the chip U2 is electrically connected to capacitor EC4, capacitor C3 and one end of capacitor EC3, the other end of capacitor EC4, capacitor C3 and capacitor EC3 are grounded, pin 4 of the chip U2 is electrically connected to one end of capacitor C1 and the other end of the inductor L1, and pin 5 of the chip U2 is electrically connected to the other end of capacitor C1.

[0023] The delayed power-on circuit includes a chip U3, wherein pin 2 of the chip U3 is electrically connected to capacitor C5, resistor R9, one end of diode D1 and pin 6 of chip U3, the other end of resistor R9 and diode D1 is grounded, and pin 4 and pin 8 of the chip U3 and the other end of capacitor C5 are electrically connected to pin 1 of chip U4 respectively.

[0024] The PWM voltage conversion circuit includes a MOS tube Q1, a MOS tube Q2, a MOS tube Q3, a MOS tube Q4 and a MOS tube Q5, wherein the pin 1 of the MOS tube Q1, the pin 1 of the MOS tube Q2, the pin 1 of the MOS tube Q3, the pin 1 of the MOS tube Q4 and the pin 1 of the MOS tube Q5 are respectively electrically connected to the pin 2 of the chip U1, the pin 3 of the MOS tube Q1 is electrically connected to one end of the resistor R4 and the pin G of the MOS tube Q10, the other end of the resistor R4 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q2 is electrically connected to one end of the resistor R5 and the pin G of the MOS tube Q10, The MOS tube Q9 is electrically connected to the pin G, the other end of the resistor R5 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q3 is electrically connected to one end of the resistor R6 and the pin G of the MOS tube Q8, the other end of the resistor R6 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q4 is electrically connected to one end of the resistor R7 and the pin G of the MOS tube Q7, the other end of the resistor R7 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q5 is electrically connected to one end of the resistor R8 and the pin G of the MOS tube Q6, and the other end of the resistor R8 is electrically connected to the pin 3 of the chip U3.

[0025] As a further limitation of this technical solution,

[0026] Pin 3 of the chip U2 is electrically connected to a +12V / 24V power supply.

[0027] Pin 1 of the output port outputs +12V / 24V.

[0028] The model of the chip U1 is AMS1117.

[0029] The model of the chip U2 is PL8310E.

[0030] The model of the chip U3 is SA555DR.

[0031] The model of the chip U4 is CJ7805.

[0032] The model of the chip U5 is TLSR8258F512ET32.

[0033] The DC / DC power supply circuit mainly outputs 3.3V to power the chip U5 and 9V to the delayed power-on circuit.

[0034] Without changing the phase, the PWM.3.3V voltage is converted into 9V output to power the MOS tube driver.

[0035] The working principle of a high current driving circuit of a MOS tube provided by the utility model is as follows:

[0036] Since the LED drive circuit must drive voltage, Figure 1 It is the DC / CD power supply circuit, which provides a stable 3.3V power supply to the chip U5 and a 9V voltage to the delay circuit. Figure 2 The function of the delayed power-on circuit is to make the signal time of the chip U5PWM output consistent with the MOS conduction time, thereby avoiding the situation where the MOS tube is turned on before the chip U5 has a chance to work. Figure 3 It is a PWM voltage conversion circuit, which converts the PWM 3.3V voltage into a 9V voltage, thereby providing Figure 5 MOS tube provides a driving voltage of 9V. The reason why 9V voltage is used to drive MOS tube is that the driving voltage of MOS tube is raised, the internal resistance of MOS tube is reduced, and the switching loss of MOS tube can be reduced, thereby greatly improving the use efficiency of MOS tube, and the current passing through MOS tube can be increased. At the same time, due to the reduction of internal resistance of MOS tube, the heat generated by MOS tube is also reduced accordingly, which can further improve the service life of MOS tube.

[0037] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A high current driving circuit for a MOS tube, characterized in that: include: MOS tube drive circuit, PWM voltage conversion circuit, delayed power-on circuit and DC / DC power supply circuit; The DC / DC power supply circuit is electrically connected to the delayed power-on circuit, the delayed power-on circuit is electrically connected to the PWM voltage conversion circuit, and the PWM voltage conversion circuit is electrically connected to the MOS tube driving circuit; The MOS transistor driving circuit includes an output port, wherein pin 2 of the output port is electrically connected to pin D of MOS transistor Q6, pin 3 of the output port is electrically connected to pin D of MOS transistor Q7, pin 4 of the output port is electrically connected to pin D of MOS transistor Q8, pin 5 of the output port is electrically connected to pin D of MOS transistor Q9, and pin 6 of the output port is electrically connected to pin D of MOS transistor Q10; A pin G of the MOS tube Q6 is electrically connected to one end of the resistor R12, a pin G of the MOS tube Q7 is electrically connected to one end of the resistor R13, a pin G of the MOS tube Q8 is electrically connected to one end of the resistor R14, a pin G of the MOS tube Q9 is electrically connected to one end of the resistor R15, a pin G of the MOS tube Q10 is electrically connected to one end of the resistor R16, and the other ends of the resistors R12, R13, R14, R15 and R16 are grounded respectively.

2. The high current driving circuit of the MOS tube according to claim 1, characterized in that: The DC / DC power supply circuit includes a chip U1, a chip U2 and a chip U4, wherein the pin 2 of the chip U1 is electrically connected to one end of the capacitor C2 and the capacitor EC2, and the other end of the capacitor C2 and the capacitor EC2 is grounded, the pin 3 of the chip U1 is electrically connected to one end of the resistor R20, the pin 3 of the chip U4 and one end of the capacitor EC5, and the other end of the capacitor EC5 is grounded, the pin 1 of the chip U4 is electrically connected to the capacitor C9, the capacitor EC1, the resistor R2, the resistor R1, one end of the inductor L1 and the other end of the resistor R20, the capacitor C9, the resistor EC1, the resistor R2, the resistor R1, one end of the inductor L1 and the other end of the resistor R20, Capacitor EC1 and the other end of the resistor R2 are grounded, pin 1 of the chip U2 is electrically connected to resistor R3, one end of capacitor C4 and the other end of the resistor R1, the other end of the resistor R3 and the capacitor C4 are grounded, pin 3 of the chip U2 is electrically connected to capacitor EC4, capacitor C3 and one end of capacitor EC3, the other end of capacitor EC4, capacitor C3 and capacitor EC3 are grounded, pin 4 of the chip U2 is electrically connected to one end of capacitor C1 and the other end of the inductor L1, and pin 5 of the chip U2 is electrically connected to the other end of capacitor C1.

3. The high current driving circuit of the MOS tube according to claim 2, characterized in that: The delayed power-on circuit includes a chip U3, wherein pin 2 of the chip U3 is electrically connected to capacitor C5, resistor R9, one end of diode D1 and pin 6 of chip U3, the other end of resistor R9 and diode D1 is grounded, and pin 4 and pin 8 of the chip U3 and the other end of capacitor C5 are electrically connected to pin 1 of chip U4 respectively.

4. The high current driving circuit of the MOS tube according to claim 3 is characterized in that: The PWM voltage conversion circuit includes a MOS tube Q1, a MOS tube Q2, a MOS tube Q3, a MOS tube Q4 and a MOS tube Q5, wherein the pin 1 of the MOS tube Q1, the pin 1 of the MOS tube Q2, the pin 1 of the MOS tube Q3, the pin 1 of the MOS tube Q4 and the pin 1 of the MOS tube Q5 are respectively electrically connected to the pin 2 of the chip U1, the pin 3 of the MOS tube Q1 is electrically connected to one end of the resistor R4 and the pin G of the MOS tube Q10, the other end of the resistor R4 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q2 is electrically connected to one end of the resistor R5 and the pin G of the MOS tube Q10, The MOS tube Q9 is electrically connected to the pin G, the other end of the resistor R5 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q3 is electrically connected to one end of the resistor R6 and the pin G of the MOS tube Q8, the other end of the resistor R6 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q4 is electrically connected to one end of the resistor R7 and the pin G of the MOS tube Q7, the other end of the resistor R7 is electrically connected to the pin 3 of the chip U3, the pin 3 of the MOS tube Q5 is electrically connected to one end of the resistor R8 and the pin G of the MOS tube Q6, and the other end of the resistor R8 is electrically connected to the pin 3 of the chip U3.

5. The high current driving circuit of the MOS tube according to claim 3, characterized in that: The PWM voltage conversion circuit also includes a chip U5, wherein pin 2 of the MOS tube Q1 is electrically connected to pin 14 of the chip U5, pin 2 of the MOS tube Q2 is electrically connected to pin 31 of the chip U5, pin 2 of the MOS tube Q3 is electrically connected to pin 22 of the chip U5, pin 2 of the MOS tube Q4 is electrically connected to pin 23 of the chip U5, pin 2 of the MOS tube Q5 is electrically connected to pin 24 of the chip U5, pins 9, 18 and 19 of the chip U5 are electrically connected to pin 2 of the chip U1 respectively, pin 9 of the chip U5 is electrically connected to one end of the capacitor C7, pin 18 of the chip U5 is electrically connected to one end of the capacitor C20, pin 19 of the chip U5 is electrically connected to one end of the capacitor C21, and the other ends of the capacitor C7, the capacitor C20 and the capacitor C21 are grounded respectively.

6. The high current driving circuit of the MOS tube according to claim 2, characterized in that: Pin 3 of the chip U2 is electrically connected to a +12V / 24V power supply.

7. The high current driving circuit of the MOS tube according to claim 1, characterized in that: Pin 1 of the output port outputs +12V / 24V.

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