Image sensor and monitoring equipment

Abstract

The utility model discloses an image sensor and monitoring equipment, the image sensor comprises a pixel unit, the pixel unit comprises a lens layer, a filter layer, two shading layers and a photodiode, and the filter layer is arranged at the lower part of the lens layer; the two light shielding layers are arranged in the first direction and are arranged at intervals, and the two light shielding layers are located below the light filtering layer and are arranged at intervals with the light filtering layer; the photodiode is arranged at the lower parts of the two shading layers; wherein the lens layer and the filter layer move along the first direction and synchronously deviate relative to the photodiode, and are used for shielding strong light rays smaller than a preset angle. According to the image sensor, the strong light rays smaller than the preset angle are structurally inhibited, the strong light rays larger than the preset angle can pass through conveniently, the imaging quality is improved, the calculation amount is reduced, the time is shortened, chip resource utilization is reduced, the cost is reduced, and the real-time performance is improved.

Description

Technical Field

[0001] The present application relates to the field of optical technology, and in particular to an image sensor and a monitoring device. Background Art

[0002] With the development of digital intelligence, the management capabilities of high-speed traffic in data acquisition, data analysis, preventive law enforcement, etc. have been strengthened, which puts higher requirements on the monitoring system. In the nighttime highway scene, the light intensity emitted by the high beam of vehicles is extremely high. This strong light directly shines on the lens of the monitoring equipment, which will cause obvious glare and halo in the image, making it impossible for the monitoring equipment to clearly capture obstacles, pedestrians, vehicles and road conditions. Details, etc., make it impossible for the staff of the monitoring center to obtain clear images, and thus fail to discover potential safety hazards in time.

[0003] The existing solution is to use image processing methods to calculate the image in the strong light to improve the image quality. However, the above image processing methods are computationally intensive and time-consuming; they also consume a lot of chip resources. Utility Model Content

[0004] The present application provides an image sensor and a monitoring device to solve the technical problems that the existing image processing method is used to calculate the image in the strong light, which results in a large amount of calculation and consumes a lot of time; at the same time, it consumes a lot of chip resources.

[0005] In order to solve the above technical problems, the present application proposes an image sensor, including a pixel unit, which includes: a lens layer; a filter layer, which is arranged at the bottom of the lens layer; two shading layers, which are arranged along a first direction and are spaced apart, and the two shading layers are both located below the filter layer and spaced apart from the filter layer; a photodiode, which is arranged at the bottom of the two shading layers; wherein the lens layer and the filter layer move along the first direction and are synchronously offset relative to the photodiode, so as to block strong light rays with an angle smaller than a preset angle.

[0006] Wherein, D=(Htanθ1+Htanθ2) / 2; wherein D is the synchronous lateral offset distance of the lens layer and the filter layer moving relative to the photodiode; H is the distance from the photodiode to the center of the lens layer; θ1 is the angle of the main light at the first position toward the pixel unit; θ2 is the angle of the main light at the second position toward the pixel unit.

[0007] Among them, d1=(Hh)tanθ1-D+L / 2; d1 is the width of the light shielding layer; h is the distance between the top of the light shielding layer and the top of the photodiode; L is the size of the pixel unit along the first direction.

[0008] The length of the photodiode along the first direction is greater than or equal to the spacing length between the two light shielding layers.

[0009] Among them, d2=Htanθ2-Htanθ1; d2 is the width of the photodiode; H is the distance from the photodiode to the center of the lens layer; θ1 is the angle of the main light at the first position to the pixel unit; θ2 is the angle of the main light at the second position to the pixel unit.

[0010] Among them, tanθ1=H1 / W1; wherein H1 is the vertical distance of the pixel unit on the extension line of the first position; W1 is the distance between the first position and the orthographic projection of the pixel unit on the extension line of the first position.

[0011] Wherein, tanθ2=H2 / W2; wherein H2 is the vertical distance of the pixel unit on the extension line of the second position; and W2 is the distance between the second position and the orthographic projection of the pixel unit on the extension line of the second position.

[0012] The method comprises a plurality of pixel units arranged along a first direction, wherein the lens layer and the filter layer in the plurality of pixel units move synchronously along the first direction and are shifted relative to the corresponding photodiodes.

[0013] In order to solve the above technical problems, the present application proposes a monitoring device, including the above image sensor.

[0014] The invention comprises: a lens mount; a lens arranged on the lens mount; a circuit board arranged on the lens mount; an image sensor arranged on the circuit board; the image sensor is used to convert the optical image generated by the lens into an electrical signal and transmit it to the monitoring device through the circuit board.

[0015] The beneficial effects of the present application are as follows: Different from the prior art, the present application provides an image sensor. The image sensor includes a pixel unit. The pixel unit includes a lens layer, a filter layer, two light shielding layers and a photodiode. The filter layer is arranged at the bottom of the lens layer. The two light shielding layers are arranged along a first direction and are spaced apart. The two light shielding layers are both located below the filter layer and are spaced apart from the filter layer. The photodiode is arranged at the bottom of the two light shielding layers. Among them, the lens layer and the filter layer move along the first direction and are synchronously offset relative to the photodiode, so as to block strong light rays less than a preset angle.

[0016] Therefore, through the cooperation of the above-mentioned lens layer, filter layer, two shading layers and photodiode, strong light with an angle smaller than the preset angle is suppressed from the structural point of view, and strong light with an angle greater than the preset angle is facilitated to pass through, which not only improves the imaging quality, but also reduces the amount of calculation and shortens the time, while also reducing the chip resource utilization, reducing costs, and also improving real-time performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0018] Figure 1 It is a structural schematic diagram of an embodiment of a vehicle of the present application;

[0019] Figure 2 is a first structural schematic diagram of an embodiment of an image sensor of the present application;

[0020] Figure 3 is a second structural schematic diagram of an embodiment of an image sensor of the present application;

[0021] Figure 4 is a third structural schematic diagram of an embodiment of an image sensor of the present application;

[0022] Figure 5 is a fourth structural schematic diagram of an embodiment of an image sensor of the present application;

[0023] Figure 6 is a fifth structural diagram of an embodiment of an image sensor of the present application;

[0024] Figure 7 is a sixth structural schematic diagram of an embodiment of an image sensor of the present application;

[0025] Figure 8 This is the seventh structural diagram of an image sensor embodiment of the present application.

[0026] Reference numerals: 10, image sensor; 11, pixel unit; 111, lens layer; 112, filter layer; 113, light shielding layer; 114, photodiode; 20, monitoring equipment; 30, vehicle. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0028] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0029] See also Figures 1 to 3 , Figure 1 It is a structural schematic diagram of an embodiment of a vehicle of the present application; Figure 2 is a first structural schematic diagram of an embodiment of an image sensor of the present application; Figure 3 1 is a second structural diagram of an embodiment of the image sensor of the present application. In order to elaborate on the structure of the pixel unit 11 in the image sensor 10, the image sensor 10 is applied to a highway scene for detailed explanation. For example, in a highway scene, the high beam light of the monitoring device 20 mainly comes from the high beam of the vehicle 30. The central small-angle energy emitted by the high beam is too strong, which enters the lens to cause strong light, thereby affecting the image quality.

[0030] like Figure 1 As shown, the highway scene includes a monitoring device 20, a vehicle 30, and a monitoring area Z. The monitoring area Z includes a first position A, a second position B, and a third position C. The first position A is the position of the vehicle 30 where the high beam light does not cause the monitoring device 20 to capture strong light. The second position B is the boundary position of the monitoring area Z and is located on the right side of the first position A. The third position C is the boundary position of the monitoring area Z and is located on the left side of the first position A. In the area between the third position C and the first position A, the high beam center small angle strong light will be captured by the monitoring device 20, causing the image to be overexposed and information to be lost. In the area between the first position A and the second position B, the main light of the high beam with a large field of view angle will be injected into the monitoring device 20, and normal imaging will be achieved. θ1 can be a preset angle, which is the angle at which the main light of the high beam at the first position A is emitted to the monitoring device 20. θ2 is the first critical angle, which is the angle at which the main light of the high beam at the second position B is emitted to the monitoring device 20. θ3 is a second critical angle, which is the angle at which the main light of the high beam lamp at the third position C is directed toward the monitoring device 20. The preset angle θ1 is greater than the second critical angle θ3, and the preset angle θ1 is less than the first critical angle θ2.

[0031] Therefore, in the area between the third position C and the first position A, the high beam center small angle intensity will be incident on the monitoring device 20, causing the image to be overexposed and prone to information loss. Therefore, by changing the structure of the pixel unit 11 in the image sensor 10, the strong light rays less than the preset angle range are blocked outside the image sensor 10, that is, the strong light rays less than the preset angle are suppressed, and the strong light rays greater than the preset angle pass through.

[0032] In some embodiments, the image sensor 10 includes a pixel unit 11. The number of pixel units 11 may be, but is not limited to, one, two, three, or more than four. The number of pixel units 11 may be determined according to actual needs and is not limited here. A single pixel unit 11 includes a lens layer 111, a filter layer 112, two light shielding layers 113, and a photodiode 114.

[0033] The lens layer 111 can improve the sensitivity of the image sensor 10, reduce light leakage and crosstalk between adjacent pixel units 11, optimize the light angle and reduce shadows, etc. Among them, the lens layer 111 can be but not limited to a microlens. The filter layer 112 is arranged at the lower part of the lens layer 111. The main function of the filter layer 112 is to cut off infrared light and only allow visible light to pass through, thereby improving the image quality and ensuring that the output image is more in line with the observation requirements of the human eye or the standard of machine recognition. Among them, the filter layer 112 can be but not limited to a filter.

[0034] The two light shielding layers 113 are arranged along the first direction X. At the same time, the two light shielding layers 113 are spaced apart from each other. The two light shielding layers 113 are both located below the filter layer 112 and spaced apart from the filter layer 112. The light shielding layers 113 are mainly used to reduce color cast and improve image quality, and ultimately improve the clarity and authenticity of the captured image. The light shielding layer 113 may be, but is not limited to, a light shielding sheet. The photodiode 114 is disposed below the two light shielding layers 113. The photodiode 114 is used to convert an optical signal into an electrical signal.

[0035] The lens layer 111 and the filter layer 112 move along the first direction X. The lens layer 111 and the filter layer 112 move synchronously along the first direction X separately; or, the lens layer 111 and the filter layer 112 move along the first direction X as a whole. After the lens layer 111 and the filter layer 112 move along the first direction X, the lens layer 111 and the filter layer 112 are synchronously offset relative to the photodiode 114, that is, the offset displacement of the lens layer 111 and the filter layer 112 relative to the photodiode 114 is the same, which is used to block strong light less than a preset angle. The preset angle is the above-mentioned θ1.

[0036] See also Figures 4 to 6 , Figure 4 is a third structural schematic diagram of an embodiment of an image sensor of the present application; Figure 5is a fourth structural schematic diagram of an embodiment of an image sensor of the present application; Figure 6 1 is a fifth structural diagram of an embodiment of the image sensor of the present application. Figures 1 to 3 , the lens layer 111 and the filter layer 112 move along the first direction X, and the lens layer 111 and the filter layer 112 are synchronously shifted relative to the photodiode 114. Figure 4 As shown, the main light at angle θ3 cannot be projected onto the photodiode 114 due to the shielding of the light shielding layer 113, wherein the angle θ3 is smaller than the preset angle. Figure 5 As shown in FIG. 1 , for the main light with the preset angle θ1, the main light incident on the lens layer 111 is just not blocked by the light shielding layer 113 and just enters the photodiode 114 and reaches the left edge of the photodiode 114. Figure 6 As shown, the main light with an angle of θ2 enters the lens layer 111 and enters the photodiode 114 and reaches the right edge of the photodiode 114 .

[0037] Therefore, through the cooperation of the lens layer 111, the filter layer 112, the two light shielding layers 113 and the photodiode 114, the strong light rays with a smaller angle than the preset angle are suppressed from the structure, and the strong light rays with a larger angle than the preset angle are facilitated to pass through, which not only improves the imaging quality, but also reduces the amount of calculation, shortens the time, and also reduces the chip resource utilization, reduces the cost, and also improves the real-time performance. The lens layer 111, the filter layer 112, the light shielding layer 113 and the photodiode 114 are conventional components for those skilled in the art, and their working principles are not limited here.

[0038] See also Figure 7 , Figure 7 6 is a schematic diagram of the structure of an embodiment of an image sensor of the present application. Figures 1 to 6 In some embodiments, the lateral offset distance of the lens layer 111 and the filter layer 112 relative to the photodiode 114 can be expressed as follows. D = (Htanθ1 + Htanθ2) / 2. Wherein, D is the synchronous lateral offset distance of the lens layer 111 and the filter layer 112 moving relative to the photodiode 114. H is the distance from the photodiode 114 to the center of the lens layer 111. θ1 is the angle at which the main light at the first position A is emitted to the pixel unit 11. θ2 is the angle at which the main light at the second position B is emitted to the pixel unit 11. The angle θ1 is smaller than the angle θ2. The above D may be related to the size of H, θ1 and θ2. By limiting the above lateral offset distance, strong light less than a preset angle can be suppressed, and strong light greater than a preset angle can be facilitated to pass through, thereby improving imaging quality and real-time performance and reducing costs.

[0039] In some embodiments, the width of the light shielding layer 113 can be expressed as follows.

[0040] d1=(Hh)tanθ1-D+L / 2. d1 is the width of the light shielding layer 113. h is the distance between the top of the light shielding layer 113 and the top of the photodiode 114. L is the size of the pixel unit 11 along the first direction X, which is equivalent to the diameter of the lens layer 111. The above d1 may be related to the size of H, h, θ1, D and L. By limiting the width of the above light shielding layer 113, strong light rays less than a preset angle can be suppressed, thereby improving the imaging quality.

[0041] In some embodiments, the length of the photodiode 114 along the first direction X is greater than or equal to the distance between the two light shielding layers 113. By limiting the length of the photodiode 114, more light passes through the photodiode 114, thereby converting the optical signal into the electrical signal more accurately, thereby improving the imaging quality.

[0042] In some embodiments, the width of the photodiode 114 may be given by the following formula.

[0043] d2=Htanθ2-Htanθ1. d2 is the width of the photodiode 114. H is the distance from the photodiode 114 to the center of the lens layer 111. θ1 is the angle at which the main light at the first position A is emitted to the pixel unit 11. θ2 is the angle at which the main light at the second position B is emitted to the pixel unit 11. The above d2 may be related to the size of H, θ2 and θ1. By limiting the width of the above photodiode 114, strong light less than a preset angle can be suppressed, thereby improving the imaging quality.

[0044] In some embodiments, tanθ1=H1 / W1. H1 is the vertical distance of the pixel unit 11 on the extension line of the first position A, where the extension line of the first position A may be the extension direction of the traveling direction of the vehicle 30. W1 is the distance between the first position A and the orthographic projection of the pixel unit 11 on the extension line of the first position A. That is, the size of θ1 is related to H1 and W1, and its size can be determined according to actual needs.

[0045] In some embodiments, tanθ2=H2 / W2. H2 is the vertical distance of the pixel unit 11 on the extension line of the second position B, where the extension line of the second position B can be the extension direction of the travel direction of the vehicle 30. H2 can be equal to H1. W2 is the distance between the second position B and the positive projection of the pixel unit 11 on the extension line of the second position B. That is, the size of θ2 is related to H2 and W2, and its size can be determined according to actual needs. The length of W1 is greater than the length of W2.

[0046] Through the above H1, W1, H2 and W2, the size of θ1 and θ2 can be determined, and then the size of the lateral offset distance D can be determined, so that the strong light less than the preset angle can be suppressed, thereby improving the imaging quality. Therefore, through the above method, the structure is simple, the calculation amount is simple, the time is shortened, and the chip resource usage can be reduced, thereby reducing the cost.

[0047] See also Figure 8 , Figure 8 1 is a seventh structural diagram of an embodiment of an image sensor of the present application. Figures 1 to 7 In some embodiments, the image sensor 10 includes a plurality of pixel units 11. The plurality of pixel units 11 are arranged in a first direction X. The lens layer 111 and the filter layer 112 in a single pixel unit 11 are offset relative to the photodiode 114 in the single pixel unit 11 along the first direction X. When the plurality of pixel units 11 are arranged in a row, the lens layer 111 and the filter layer 112 in the plurality of pixel units 11 move along the first direction X and are synchronously offset relative to the corresponding photodiode 114. For example, the lens layer 111 and the filter layer 112 in one pixel unit 11 are located above the light shielding layer 113 and the photodiode 114 in another pixel unit 11. By synchronously moving the lens layer 111 and the filter layer 112 in the plurality of pixel units 11 along the first direction X, the accuracy of strong light suppression is improved, thereby improving the imaging quality.

[0048] The present application provides a monitoring device 20. The monitoring device 20 includes the image sensor 10 described above. By using the above-mentioned image sensor 10, the monitoring device 20 structurally suppresses strong light rays less than a preset angle, and facilitates the passage of strong light rays greater than the preset angle, which not only improves the imaging quality, but also reduces the amount of calculation, shortens the time, and also reduces the chip resource utilization, reduces the cost, and also improves the real-time performance. It should be noted that the image sensor 10 in this embodiment is the image sensor 10 described in the above embodiment, and will not be repeated here one by one.

[0049] In some embodiments, the monitoring device 20 includes a lens mount (not shown in the figure), a lens (not shown in the figure), and a circuit board (not shown in the figure). The lens is set on the lens mount. For example, the lens is detachable or fixedly connected to the lens mount. The circuit board is set on the lens mount. For example, the circuit board is detachable or fixedly connected to the lens mount. The image sensor 10 is set on the circuit board. For example, the image sensor 10 is detachable or fixedly connected to the circuit board. The image sensor 10 is used to convert the optical image generated by the lens into an electrical signal and transmit it to the monitoring device 20 through the circuit board. For example, the electrical signal of the image sensor 10 is transmitted to the main circuit board in the monitoring device 20 through the circuit board to realize the functions of the lens, etc.

[0050] The terms "first", "second", "third" in this application are only used for descriptive purposes and cannot be understood as indicating the quantity of the indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of these features. In the embodiments of the present application, all directional indications (such as up, down, left, right, front, back ...) are only used to explain the relative positional relationship, motion conditions, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "include" and "have" and any of their variations are intended to cover non-exclusive inclusions. The process, method, system, product or equipment such as including a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or equipment.

[0051] The above description is only an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An image sensor, characterized in that: A pixel unit is included, wherein the pixel unit includes: Lens layer; A filter layer, disposed below the lens layer; Two light shielding layers are arranged along a first direction and spaced apart from each other, and both of the two light shielding layers are located below the light filter layer and spaced apart from the light filter layer; A photodiode, disposed below the two light shielding layers; The lens layer and the filter layer move along the first direction and shift synchronously relative to the photodiode, so as to shield strong light with an angle smaller than a preset angle.

2. The image sensor according to claim 1, characterized in that D=(Htanθ1+Htanθ2) / 2; wherein D is the synchronous lateral offset distance of the lens layer and the filter layer moving relative to the photodiode; H is the distance from the photodiode to the center of the lens layer; θ1 is the angle of the main light ray at the first position toward the pixel unit; θ2 is the angle of the main light ray at the second position toward the pixel unit.

3. The image sensor according to claim 2, characterized in that d1=(Hh)tanθ1-D+L / 2; wherein d1 is the width of the light shielding layer; h is the distance between the top of the light shielding layer and the top of the photodiode; and L is the size of the pixel unit along the first direction.

4. The image sensor according to claim 1, characterized in that The length of the photodiode along the first direction is greater than or equal to the spacing length between the two light shielding layers.

5. The image sensor according to claim 4, characterized in that: d2=Htanθ2-Htanθ1; Wherein, d2 is the width of the photodiode; H is the distance from the photodiode to the center of the lens layer; θ1 is the angle of the main light ray at the first position toward the pixel unit; θ2 is the angle of the main light ray at the second position toward the pixel unit.

6. The image sensor according to claim 2, 3 or 5, characterized in that: tanθ1=H1 / W1; wherein H1 is the vertical distance of the pixel unit on the extension line of the first position; and W1 is the distance between the first position and the orthographic projection of the pixel unit on the extension line of the first position.

7. The image sensor according to claim 2, 3 or 5, characterized in that: tanθ2=H2 / W2; wherein H2 is the vertical distance of the pixel unit on the extension line of the second position; and W2 is the distance between the second position and the orthographic projection of the pixel unit on the extension line of the second position.

8. The image sensor according to claim 1, characterized in that It comprises a plurality of pixel units arranged along the first direction, wherein the lens layer and the filter layer in the plurality of pixel units move synchronously along the first direction and are both offset relative to the corresponding photodiode.

9. A monitoring device, characterized in that: The image sensor comprises the image sensor according to any one of claims 1 to 8.

10. The monitoring device according to claim 9, characterized in that: include: Lens mount; A lens, arranged on the lens mount; A circuit board is arranged on the lens mount, and the image sensor is arranged on the circuit board. The image sensor is used to convert the optical image generated by the lens into an electrical signal and transmit it to the monitoring device through the circuit board.

Images