Wafer testing device

Abstract

The utility model provides a wafer testing device, and relates to the technical field of semiconductors. The wafer testing device comprises a base, a testing structure and a heating structure located between the base and the testing structure. The heating structure and the testing structure are respectively connected with the base, the heating structure is provided with a heating cavity, the heating cavity is used for heating a wafer, and the testing structure is used for testing the performance of the wafer. According to the wafer testing device, the warping phenomenon of the wafer can be improved, so that the wafer is convenient to test when being tested, and the testing accuracy is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and more particularly to a wafer testing device. Background Art

[0002] In the field of advanced packaging manufacturing, fan-out wafer level package (FOWLP) is an embedded chip packaging method at the wafer level, and is currently one of the advanced packaging methods with more input / output ports (I / O) and better integration flexibility. Compared with conventional wafer-level packaging, fan-out wafer-level packaging has the advantages of smaller packaging area, being scalable to achieve large-panel production, having better electrical and thermal performance, and being easy to achieve high-density wiring in the redistribution layer, and has been widely used in the semiconductor industry.

[0003] The fan-out wafer-level packaging structure generally cuts a single chip from a wafer, then packages it onto a carrier wafer, and then performs plastic encapsulation protection to reconstruct the wafer. Usually, the reconstructed wafer needs to be tested to determine whether the chip is a qualified chip. However, during the testing process of the existing reconstructed wafer, due to the warping of the reconstructed wafer, it is easy to cause inaccurate positioning of the test probes, resulting in test failure or inaccurate testing. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a wafer testing device, which can improve the warping phenomenon of the wafer, making it easier to test the wafer during testing and improving the testing accuracy.

[0005] The embodiments of the utility model are implemented as follows:

[0006] On the one hand, the utility model provides a wafer testing device, which includes a base, a testing structure, and a heating structure located between the base and the testing structure; the heating structure and the testing structure are respectively connected to the base, the heating structure has a heating cavity for heating the wafer, and the testing structure is used for performing performance testing on the wafer. This wafer testing device can improve the warping phenomenon of the wafer, making it easier to test the wafer during testing and improving the testing accuracy.

[0007] Optionally, a receiving cavity is recessed on one side of the base facing the heating structure, and at least part of the heating structure is received in the receiving cavity, and the receiving cavity is adapted to the outer shape of the heating structure.

[0008] Optionally, the heating cavity is recessed on one side of the heating structure facing the testing structure, and the heating cavity is used for receiving at least part of the wafer, and the heating cavity is adapted to the outer shape of the wafer.

[0009] Optionally, the surface of the heating structure facing the test structure is flush with the surface of the base facing the test structure.

[0010] Optionally, the depth of the heating cavity is the same as the thickness of the wafer.

[0011] Optionally, the base has a first connection hole recessed in the bottom wall of the accommodating cavity; the heating structure has a second connection hole penetrating through the heating structure; the wafer testing device further includes a connecting member, and the connecting member fixedly connects the base and the heating structure through the first connection hole and the second connection hole.

[0012] Optionally, the surface of the base facing the test structure is convexly provided with support columns, the support columns are located on the outer periphery of the wafer and are spaced from the wafer, and the end of the support column away from the base is used to cooperate with the test structure for supporting the test structure.

[0013] Optionally, there are multiple support columns, the multiple support columns are spaced from each other and are evenly distributed along the circumferential direction of the wafer.

[0014] Optionally, the test structure has a test area, the test area is provided with a plurality of probe holes, and the probe holes penetrate through the test structure along the thickness direction of the test structure.

[0015] Optionally, the probe holes are adapted to the outer shape of the test probes; or, the orthographic projection of the test area facing the base covers the wafer.

[0016] The beneficial effects of the present utility model include:

[0017] The wafer testing device provided in the present application includes a base, a test structure, and a heating structure located between the base and the test structure; the heating structure and the test structure are respectively connected to the base, the heating structure has a heating cavity for heating the wafer, and the test structure is used for performing performance testing on the wafer. By providing the heating structure in the present application, the wafer can be heated before testing, so as to release the stress inside the wafer and improve the warping phenomenon of the wafer. In this way, when the wafer is tested after heating, the influence of the wafer warping phenomenon on the testing can be reduced, so that it is convenient to test the wafer during testing and the testing accuracy is improved. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present utility model, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1One of the structural schematic diagrams of the wafer testing device provided by the embodiment of the present utility model;

[0020] Figure 2 Another structural schematic diagram of the wafer testing device provided by the embodiment of the present utility model;

[0021] Figure 3 Structural schematic diagram of the base and the support column provided by the embodiment of the present utility model;

[0022] Figure 4 Testing structure provided by the embodiment of the present utility model.

[0023] Reference numerals: 10 - base; 11 - accommodating cavity; 12 - first connection hole; 20 - testing structure; 21 - testing area; 211 - probe hole; 22 - mating hole; 30 - heating structure; 31 - heating cavity; 32 - second connection hole; 40 - connecting member; 50 - support column; 200 - wafer; 300 - testing probe. Detailed implementation manners

[0024] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Apparently, the described embodiments are some but not all of the embodiments of the present utility model. Components of the embodiments of the present utility model usually described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present utility model provided in the accompanying drawings is not intended to limit the scope of the present utility model claimed, but merely represents selected embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0026] It should be noted that: like reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0027] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the utility model product is usually placed during use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation on the present utility model. In addition, terms such as "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0028] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0029] In the description of the present utility model, it should also be noted that unless otherwise clearly specified and defined, the terms "set", "install", "connect", "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific situations.

[0030] Please refer to Figure 1 and Figure 2 , this embodiment provides a wafer testing device, which includes a base 10, a testing structure 20, and a heating structure 30 located between the base 10 and the testing structure 20; the heating structure 30 and the testing structure 20 are respectively connected to the base 10, the heating structure 30 has a heating chamber 31, the heating chamber 31 is used to heat the wafer 200, and the testing structure 20 is used to perform performance testing on the wafer 200. This wafer testing device can improve the warping phenomenon of the wafer 200, so that it is convenient to test the wafer 200 during testing and improve the testing accuracy.

[0031] It should be noted that the wafer testing device of the present application includes a base 10, a heating structure 30, and a testing structure 20. Among them, the base 10 is used to support the heating structure 30 and the testing structure 20. The heating structure 30 is used to heat the wafer 200 to improve the warping phenomenon of the wafer 200. The testing structure 20 is used to perform performance testing on the wafer 200. Among them, the specific test type of the above performance testing is not limited in the present application, and those skilled in the art can select it according to needs.

[0032] In this embodiment, when the above-mentioned wafer testing device is in use, the wafer 200 can be first placed in the heating chamber 31 of the heating structure 30 to heat the wafer 200. The purpose of this heating process is mainly to release the stress inside the wafer 200 to reduce warping. After the heating is completed, the wafer 200 is cooled down to a preset temperature. Then, the testing structure 20 is installed on the base 10, and the performance of the wafer 200 is tested through the testing structure 20.

[0033] Among them, the application does not limit the above-mentioned heating temperature and heating time. For example, the heating temperature can be about 125 °C, and the heating time can be about 3 minutes. In addition, the above-mentioned cooling time can be about 1 minute, and the above-mentioned preset temperature can be determined according to actual needs, and the application does not limit it. For example, the preset temperature can be about 70 °C.

[0034] In this embodiment, the heating structure 30 and the testing structure 20 are respectively connected to the base 10. Among them, for the convenience of maintenance or replacement, the above-mentioned heating structure 30 and testing structure 20 can be detachably connected to the base 10 respectively.

[0035] The heating structure 30 of the present application has a heating chamber 31, and the heating chamber 31 can heat the wafer 200 placed therein. Among them, the application does not limit the heating method of the heating chamber 31. For example, it can be realized by burying heating pipes or heating wires in the heating structure 30. Of course, this heating method is only an example and is not a limitation of the present application. Those skilled in the art can choose any feasible heating method according to needs, as long as the wafer 200 placed in the heating chamber 31 can be heated to reduce warping.

[0036] The above-mentioned testing structure 20 is used to test the wafer 200. Among them, the application does not limit the testing method and the specific components required for the testing structure 20 to perform testing. Those skilled in the art can make a suitable selection from the existing testing components.

[0037] In addition, it should be noted that in this embodiment, when testing the wafer 200 through the wafer testing device, the testing structure 20 can be not assembled first. Only the heating structure 30 connected to the base 10 is used to heat the wafer 200 first to reduce warping. After the heating is completed, the heating structure 30 can be removed (or the heating of the wafer 200 by the heating structure 30 can be disconnected without removing the heating structure 30), and then the testing structure 20 is assembled on the base 10, and then the wafer 200 is tested through the testing structure 20.

[0038] Alternatively, during use, the test structure 20 and the heating structure 30 can also be assembled together before heating. That is, the present application does not limit the specific usage mode of the wafer testing device, and a suitable mode can be selected according to requirements.

[0039] Of course, optionally, the above-mentioned heating structure 30 and test structure 20 are respectively detachably connected to the base 10 to facilitate assembly, repair, or replacement. Among them, the present application does not specifically limit the manner of the above-mentioned detachable connection.

[0040] In summary, the wafer testing device provided by the present application includes a base 10, a test structure 20, and a heating structure 30 located between the base 10 and the test structure 20; the heating structure 30 and the test structure 20 are respectively connected to the base 10, and the heating structure 30 has a heating chamber 31 for heating the wafer 200, and the test structure 20 is used for performing performance testing on the wafer 200. By providing the heating structure 30, the present application can heat the wafer 200 before testing, thereby releasing the stress inside the wafer 200 to improve the warping phenomenon of the wafer 200. In this way, when testing the wafer 200 after heating, the influence of the wafer warping phenomenon on the testing can be reduced, so that it is convenient to test the wafer 200 during testing and the testing accuracy can be improved.

[0041] It should be noted that wafer warping will cause problems such as inaccurate probe positioning during testing, making it inconvenient to test.

[0042] Please refer to Figure 1 and Figure 3 Optionally, a receiving cavity 11 is recessed on one side of the base 10 facing the heating structure 30, and at least part of the heating structure 30 is received in the receiving cavity 11, and the receiving cavity 11 is adapted to the outer shape of the heating structure 30. In this way, through the setting of the receiving cavity 11, the present application can radially limit the heating structure 30, thereby preventing the heating structure 30 from undergoing radial displacement and improving the heating effect of the wafer 200.

[0043] Among them, the depth of the receiving cavity 11 is not limited in the present application, as long as at least part of the wafer 200 can be received in the receiving cavity 11. For example, the depth of the receiving cavity 11 is less than the thickness of the wafer 200 or equal to the thickness of the wafer 200.

[0044] In addition, in order to prevent the heating structure 30 from moving relative to the first direction, the first direction is the arrangement mode of the base 10 and the test structure 20. Please refer to Figure 1 and Figure 3Optionally, the base 10 has a first connection hole 12, which is recessed on the bottom wall of the accommodating cavity 11; the heating structure 30 has a second connection hole 32, which is arranged through the heating structure 30; the wafer testing device further includes a connector 40, which fixes the base 10 and the heating structure 30 through the first connection hole 12 and the second connection hole 32. In this way, the heating structure 30 and the base 10 can be fixed by the connector 40.

[0045] The number of the first connection holes 12 and the number of the second connection holes 32 are the same and correspond one to one.

[0046] Furthermore, in this embodiment, the heating chamber 31 is recessed on the side of the heating structure 30 facing the test structure 20, and the heating chamber 31 is used to accommodate at least part of the wafer 200, and the heating chamber 31 is adapted to the shape of the wafer 200. In this way, it is easier for the heating chamber 31 to heat the wafer 200, and it is not easy to interfere with the base 10.

[0047] In addition, optionally, in this embodiment, the side of the heating structure 30 facing the test structure 20 is arranged flush with the side of the base 10 facing the test structure 20. In this way, the heating structure 30 can be completely accommodated in the base 10, the space of the base 10 can be effectively utilized, and the volume of the wafer testing device can be reduced.

[0048] Optionally, the depth of the heating chamber 31 is the same as the thickness of the wafer 200. That is, the depth of the heating chamber 31 is the same as the thickness of the wafer 200. In this way, the wafer 200 can be heated to reduce warping without affecting the functional surface of the wafer 200.

[0049] To facilitate the support and fixation of the test structure 20, optionally, please refer to Figure 2 and Figure 3 A support column 50 is protruding from one side of the base 10 facing the test structure 20 . The support column 50 is located at the periphery of the wafer 200 and is spaced apart from the wafer 200 . An end of the support column 50 away from the base 10 is used to cooperate with the test structure 20 to support the test structure 20 .

[0050] That is, in this embodiment, the test structure 20 is supported and relatively fixed by the support column 50. The specific structure of the support structure is not limited in this application and can be set according to actual needs as long as it can play the role of support and relative fixation.

[0051] Optionally, the support pillars 50 include a plurality of support pillars 50, which are spaced apart from each other and evenly distributed along the circumference of the wafer 200. Figure 3 As shown, in this way, the supporting effect is better and the forces at various locations of the test structure 20 are more balanced.

[0052] Further, optionally, a mating hole 22 may be provided on the test structure 20, and the mating hole 22 is used for limiting and mating with one end of the support column 50 away from the base 10. Exemplarily, the mating hole 22 may be a blind hole recessed in a surface of the test structure 20 facing the base 10, or may be a stepped hole.

[0053] Please refer to Figure 2 and Figure 4 , optionally, the test structure 20 has a test area 21, and a plurality of probe holes 211 are provided in the test area 21. The probe holes 211 penetrate through the test structure 20 in the thickness direction of the test structure 20. In this way, the test probe 300 can test the wafer 200 through the probe holes 211.

[0054] It should be noted that the probe holes 211 can limit the position of the test probe 300 to a certain extent, thereby facilitating the positioning of the test probe 300 and improving the test accuracy.

[0055] To further improve the limiting and guiding effect of the probe holes 211 on the test probe 300, optionally, the outer shape of the probe holes 211 is adapted to that of the test probe 300. In this way, the probe holes 211 can play a guiding role for the test probe 300 and prevent the test probe 300 from shifting in position.

[0056] Further, in this embodiment, the orthographic projection of the test area 21 facing the base 10 covers the wafer 200. In this way, it is convenient to test the wafer 200 through the test structure 20.

[0057] By providing the probe holes 211 in the present application, the test probe 300 can be positioned and the test probe 300 can be prevented from being deformed due to excessive temperature after the wafer 200 is heated (in the traditional solution, the probe holes 211 are not provided. Therefore, if the wafer 200 is heated, the test probe 300 will undergo high-temperature deformation. After the probe holes 211 are provided in the present application, the inner wall of the probe holes 211 can limit the test probe 300 and prevent the test probe 300 from undergoing radial deformation).

[0058] In addition, since the test structure 20 of the present application is located above the wafer 200 and completely covers the surface of the wafer 200, the test structure 20 can also prevent dust from falling and contaminating the surface of the wafer 200.

[0059] In addition, optionally, in this embodiment, the above-mentioned probe holes 211 may include a plurality of them, and the plurality of probe holes 211 are evenly distributed in the test area 21, as Figure 4 shown. Further, the plurality of probe holes 211 can store a plurality of test probes 300, which can improve the replacement and operation efficiency of the test probes 300.

[0060] The above are only optional embodiments of the present utility model and are not intended to limit the present utility model. For those skilled in the art, the present utility model can have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

[0061] In addition, it should be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. To avoid unnecessary repetition, the present utility model will not separately describe various possible combination methods.

Claims

1. A wafer testing device, characterized in that: It includes a base, a test structure and a heating structure located between the base and the test structure; the heating structure and the test structure are respectively connected to the base, the heating structure has a heating cavity, the heating cavity is used to heat the wafer, and the test structure is used to test the wafer.

2. The wafer testing device according to claim 1, characterized in that: A receiving cavity is recessed on a side of the base facing the heating structure. The heating structure is at least partially received in the receiving cavity. The receiving cavity is adapted to the shape of the heating structure.

3. The wafer testing device according to claim 2, characterized in that: The heating chamber is recessed on a side of the heating structure facing the test structure. The heating chamber is used to accommodate at least a portion of the wafer. The heating chamber is adapted to the shape of the wafer.

4. The wafer testing device according to claim 3, characterized in that: A side of the heating structure facing the test structure is flush with a side of the base facing the test structure.

5. The wafer testing device according to claim 3 or 4, characterized in that: The depth of the heating chamber is the same as the thickness of the wafer.

6. The wafer testing device according to claim 2 or 3, characterized in that: The base has a first connecting hole, which is recessed on the bottom wall of the accommodating cavity; the heating structure has a second connecting hole, which passes through the heating structure; the wafer testing device also includes a connecting member, which fixedly connects the base and the heating structure through the first connecting hole and the second connecting hole.

7. The wafer testing device according to claim 1, characterized in that: A support column is protruded from one side of the base facing the test structure. The support column is located at the periphery of the wafer and spaced apart from the wafer. An end of the support column away from the base is used to cooperate with the test structure to support the test structure.

8. The wafer testing device according to claim 7, characterized in that: The supporting pillars include a plurality of supporting pillars, which are spaced apart from each other and evenly distributed along the circumference of the wafer.

9. The wafer testing device according to claim 1, characterized in that: The test structure has a test area, and the test area is provided with a plurality of probe holes, and the probe holes penetrate the test structure along a thickness direction of the test structure.

10. The wafer testing device according to claim 9, characterized in that: The probe hole is adapted to the shape of the test probe; Alternatively, an orthographic projection of the test area toward the base covers the wafer.

Images