Binding backboard, display device and display equipment

Abstract

The embodiment of the utility model discloses a binding backboard, a display device and display equipment, and the binding backboard comprises a substrate which is provided with a first electrode to be bound; the microelectronic device is provided with a device body and a second electrode to be bound, and the device body is provided with a bottom surface and a top surface which are opposite to each other along the lamination direction, and a chip side surface adjacent to the bottom surface and the top surface; the device body comprises a plurality of semiconductor layers which are laminated along a lamination direction; the second to-be-bound electrode is electrically connected with the device body and is at least partially arranged on the side surface of the chip of the device body; the micro binding device is arranged between the first to-be-bound electrode and the second to-be-bound electrode, the micro binding device comprises a main body part and a plurality of micro plug connectors, and the micro plug connectors protrude out of the main body part and are arranged at intervals; at least part of the micro plug connectors in the plurality of micro plug connectors are plugged on the first to-be-bound electrode, and at least part of the micro plug connectors in the plurality of micro plug connectors are plugged on the second to-be-bound electrode. The effects of good contact, stable binding and the like are achieved.

Description

Technical Field

[0001] The utility model relates to the technical field of display, in particular to a bonding backplane, a display device and a display equipment. Background Art

[0002] Micro LED (Micro Light Emitting Diode) display technology is currently widely used in various display devices. The Micro LED display backplane needs to perform massive Micro LED chip transfer and bonding. As the resolution of the Micro LED display panel is getting higher and higher, the chip size is getting smaller and the gap between chips is getting smaller, it is more and more difficult to use traditional processes for bonding or single-point repair. Especially during single-point repair, it is easy to affect the solder joint quality of the chips that have been soldered around. Therefore, how to achieve better bonding of Micro LED chips during the bonding or repair process is a problem that needs to be studied. Summary of the Utility Model

[0003] Therefore, in order to overcome at least some defects in the prior art, the embodiments of the present utility model provide a bonding backplane, a display device and a display equipment, which have the effects of good contact and stable bonding.

[0004] Specifically, on the one hand, an embodiment of the present utility model provides a bonding backplane, including: a substrate having a first electrode to be bonded; a microelectronic device having a device body and a second electrode to be bonded, the device body having a bottom surface and a top surface opposite to each other in the stacking direction, and a chip side surface adjacent to the bottom surface and the top surface; the device body includes a plurality of semiconductor layers stacked in the stacking direction; the second electrode to be bonded is electrically connected to the device body and at least partially disposed on the chip side surface of the device body; a micro-bonding device disposed between the first electrode to be bonded and the second electrode to be bonded, the micro-bonding device including a main body portion and a plurality of micro-insertion members, the plurality of micro-insertion members protruding from the main body portion and being spaced apart from each other; at least some of the plurality of micro-insertion members are inserted into the first electrode to be bonded, and at least some of the plurality of micro-insertion members are inserted into the second electrode to be bonded, so that the first electrode to be bonded and the second electrode to be bonded are bonded to each other.

[0005] In some embodiments, the second electrode to be bonded has a chip electrode side portion disposed on the chip side surface; the micro-bonding device is respectively inserted into one end of the chip electrode side portion and the first electrode to be bonded.

[0006] In some embodiments, the second electrode to be bonded has a side portion of the chip electrode disposed on a side surface of the chip and a bottom portion of the chip electrode disposed on the bottom surface, and the bottom portion of the chip electrode is connected to the side portion of the chip electrode; the micro-bonding device is respectively plugged into the bottom portion of the chip electrode and the first electrode to be bonded.

[0007] In some embodiments, the second electrode to be bonded has a side portion of the chip electrode disposed on a side surface of the chip and a top portion of the chip electrode disposed on the top surface, the plurality of semiconductor layers include a first semiconductor layer and a second semiconductor layer, the second semiconductor layer is located between the first semiconductor layer and the bottom surface, the top portion of the chip electrode is electrically connected to the second semiconductor layer and insulated from the first semiconductor layer; the second electrode to be bonded further includes a bottom portion of the chip electrode connected to one end of the side portion of the chip electrode away from the top portion of the chip electrode, and the micro-bonding device is respectively plugged into the bottom portion of the chip electrode and the first electrode to be bonded.

[0008] In some embodiments, a groove is formed on the substrate, the first electrode to be bonded includes a bottom portion of the substrate electrode disposed at the bottom of the groove; the microelectronic device is disposed in the groove; the micro-bonding device is respectively plugged into the second electrode to be bonded and the bottom portion of the substrate electrode.

[0009] In some embodiments, the first electrode to be bonded further includes a side portion of the substrate electrode disposed on a sidewall of the groove, and the side portion of the substrate electrode is connected to the bottom portion of the substrate electrode; the second electrode to be bonded includes a side portion of the chip electrode located on a side surface of the chip, and the side portion of the chip electrode is connected to the side portion of the substrate electrode.

[0010] In some embodiments, the first electrode to be bonded includes a bottom portion of the substrate electrode disposed on the substrate, and a side portion of the substrate electrode extending away from the substrate along the bottom portion of the substrate electrode; the micro-bonding device is respectively plugged into the bottom portion of the substrate electrode and the second electrode to be bonded; the second electrode to be bonded has a side portion of the chip electrode disposed on a side surface of the chip, and the side portion of the chip electrode is connected to the side portion of the substrate electrode.

[0011] In some embodiments, a plurality of second electrodes to be bonded in each of the microelectronic devices correspond to and are bonded to a plurality of the first electrodes to be bonded one by one; the side portions of the substrate electrodes of the plurality of first electrodes to be bonded corresponding to the same microelectronic device jointly enclose a receiving groove, and the microelectronic device is disposed in the receiving groove.

[0012] In some embodiments, the main body portion includes a first surface and a second surface that are opposite to each other in a first direction; the plurality of micro-connectors include a plurality of first micro-pins protruding from the first surface and a plurality of second micro-pins protruding from the second surface, and the plurality of first micro-pins are respectively plugged into the first electrodes to be bonded; the plurality of second micro-pins are respectively plugged into the second electrodes to be bonded.

[0013] In some embodiments, the main body portion includes a first surface and a second surface that are opposite to each other in a first direction, and side surfaces located between the first surface and the second surface; the plurality of micro-connectors are a plurality of blades respectively protruding from the side surfaces and arranged around the main body portion, and each of the plurality of micro-connectors includes a first plugging end and a second plugging end that are opposite to each other in the first direction; the first plugging end is plugged into the first electrodes to be bonded, and the second plugging end is plugged into the second electrodes to be bonded.

[0014] In some embodiments, the plurality of semiconductor layers include a first semiconductor layer, an active layer, and a second semiconductor layer, the first semiconductor layer has the bottom surface, the top surface, and the chip side surface; the active layer covers the bottom surface and the chip side surface; the second semiconductor layer covers the active layer.

[0015] In some embodiments, the device body further includes a passivation layer covering the second semiconductor layer; the second electrodes to be bonded include a first-polarity electrode and a second-polarity electrode; the second-polarity electrode passes through the passivation layer and is electrically connected to the second semiconductor layer; the first-polarity electrode is insulated from the second semiconductor layer through the passivation layer, and the first-polarity electrode is electrically connected to the first semiconductor layer; at least a part of at least one of the first-polarity electrode and the second-polarity electrode is disposed on the chip side surface.

[0016] In some embodiments, the plurality of semiconductor layers include a first semiconductor layer, an active layer, and a second semiconductor layer, the first semiconductor layer has the bottom surface, the top surface, and the chip side surface; the active layer and the second semiconductor layer are sequentially stacked on the bottom surface; and the orthographic projection areas of the active layer and the second semiconductor layer on the bottom surface are smaller than the area of the bottom surface; the second electrodes to be bonded include a first-polarity electrode and a second-polarity electrode; the second-polarity electrode is disposed on a side of the second semiconductor layer away from the active layer and is electrically connected to the second semiconductor layer; the first-polarity electrode is at least partially disposed on the chip side surface and is electrically connected to the first semiconductor layer.

[0017] In some embodiments, the device body further includes a passivation layer disposed on the bottom surface. The first polar electrode includes a chip electrode side portion disposed on the side surface of the chip and a chip electrode bottom portion disposed on the side of the passivation layer facing away from the bottom surface.

[0018] An embodiment of the present invention provides a display device, including the bonding backplane described in any one of the foregoing items, wherein the microelectronic device is a micro light-emitting device.

[0019] An embodiment of the present invention provides a display device, including the foregoing display device.

[0020] As can be seen from the above, the above embodiments of the present invention can achieve one or more of the following beneficial effects: The portion of the second electrode to be bonded located on the side surface of the chip can increase the coverage area of the electrode material, reduce the resistance, and the contact area between the microelectronic device and the first electrode to be bonded during bonding. Moreover, the structure in which the micro bonding device is inserted into the first electrode to be bonded and the second electrode to be bonded enables the use of a non-high-temperature bonding method, reducing interference with other adjacent devices during the bonding and repair processes, thereby obtaining a bonding backplane in which the microelectronic device is in good contact and stably bonded to the substrate.

[0021] Through the following detailed description with reference to the accompanying drawings, other aspects and features of the present invention become apparent. However, it should be understood that the drawings are only designed for the purpose of explanation and not as a limitation of the scope of the present invention. It should also be understood that, unless otherwise indicated, the drawings are not necessarily drawn to scale, and they are only intended to conceptually illustrate the structures and processes described herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Hereinafter, the specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0023] Figure 1 It is a schematic structural diagram of a bonding backplane provided by an embodiment of the present invention.

[0024] Figure 2 For Figure 1 a partial enlarged schematic diagram of area A in

[0025] Figure 3 It is a three-dimensional structural diagram of a micro bonding device in an embodiment of the present invention.

[0026] Figure 4 For Figure 3 a side structural diagram of the micro bonding device shown in

[0027] Figure 5 It is a three-dimensional structural diagram of another micro bonding device in an embodiment of the present invention.

[0028] Figure 6 This is a schematic three-dimensional structure diagram of another micro bonding device in the embodiments of the present utility model.

[0029] Figure 7 This is a schematic structure diagram of another bonding backplane provided by the embodiments of the present utility model.

[0030] Figure 8a This is a schematic structure diagram of another microelectronic device in the embodiments of the present utility model.

[0031] Figure 8b This is a schematic structure diagram of another microelectronic device in the embodiments of the present utility model.

[0032] Figure 8c This is a schematic structure diagram of yet another microelectronic device in the embodiments of the present utility model.

[0033] Figure 8d This is a schematic structure diagram of another microelectronic device in the embodiments of the present utility model.

[0034] Figure 9 This is a schematic structure diagram of another bonding backplane provided by the embodiments of the present utility model.

[0035] Figure 10 This is a schematic structure diagram of yet another bonding backplane provided by the embodiments of the present utility model.

[0036] Figure 11 This is a schematic structure diagram of another bonding backplane provided by the embodiments of the present utility model.

[0037] Figure 12 is Figure 11 a schematic diagram of the substrate structure in the shown bonding backplane.

[0038] Figure 13 This is a schematic structure diagram of a display device provided by the embodiments of the present utility model.

[0039]

Explanation of reference numerals

[0040] 10. Micro-bonding device; 11. Main body; 111. First surface; 112. Second surface; 113. First guiding groove; 114. Second guiding groove; 115. Side surface; 12. Micro-plug connector; 121. First micro-needle; 122. Second micro-needle; 123. First plugging end; 124. Second plugging end; 125. Middle part of the blade; 131. First flying wing; 132. Second flying wing; 20. Substrate; 21. First electrode to be bonded; 211. Bottom of the substrate electrode; 212. Side part of the substrate electrode; 22. Groove; 23. Accommodating groove; 24. Driving circuit board; 25. Pixel defining layer; 30. Microelectronic device; 31. Second electrode to be bonded; 31a. First polar electrode; 31b. Second polar electrode; 311. Side part of the chip electrode; 312. Bottom of the chip electrode; 313. Top of the chip electrode; 32. Device body; 321. Bottom surface; 322. Top surface; 323. Chip side surface; 324. Semiconductor layer; 3241. First semiconductor layer; 3242. Second semiconductor layer; 3243. Active layer; 325. Passivation layer; 100. Bonding backplane; 200. Display device. Detailed implementation manners

[0041] To make the above objects, features, and advantages of the present utility model more obvious and understandable, the following will describe in detail the specific implementation manners of the present utility model with reference to the accompanying drawings.

[0042] In order to enable those of ordinary skill in the art to better understand the technical solutions of the present utility model, the following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present utility model.

[0043] It should be noted that the terms "first", "second", etc. in the description and claims of the present utility model and the above-mentioned accompanying drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such terms can be interchanged under appropriate circumstances so that the embodiments of the present utility model described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device comprising a series of steps or units does not necessarily have to be limited to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these processes, methods, products, or devices.

[0044] It should also be noted that the division of multiple embodiments in the present utility model is only for the convenience of description and should not constitute a special limitation. The features in various embodiments can be combined and referenced to each other without contradiction.

[0045] As Figure 1 shown, an embodiment of the present utility model provides a bonding backplane 100, which includes a substrate 20, a microelectronic device 30, and a micro-bonding device 10.

[0046] Among them, the substrate 20 has a first electrode to be bonded 21. The microelectronic device 30 has a device body 32 and a second electrode to be bonded 31. The device body 32 has a bottom surface 321 and a top surface 322 opposite to each other in the stacking direction, and a chip side surface 323 adjacent to the bottom surface 321 and the top surface 322. The device body 32 includes a plurality of semiconductor layers 324 stacked in the stacking direction. The second electrode to be bonded 31 is electrically connected to the device body 32 and is at least partially disposed on the chip side surface 323 of the device body 32.

[0047] Referring to Figure 2 , the micro-bonding device 10 is disposed between the first electrode to be bonded 21 and the second electrode to be bonded 31. The micro-bonding device 10 includes a main body portion 11 and a plurality of micro-plug connectors 12. The plurality of micro-plug connectors 12 protrude from the main body portion 11 and are spaced apart from each other. At least some of the plurality of micro-plug connectors 12 are plugged onto the first electrode to be bonded 21, and at least some of the plurality of micro-plug connectors 12 are plugged onto the second electrode to be bonded 31, so that the first electrode to be bonded 21 and the second electrode to be bonded 31 are bonded to each other.

[0048] Among them, the substrate 20 is, for example, a driving array substrate of a Micro LED chip, and a driving circuit for driving the Micro LED chip to emit light is further provided thereon. The first electrode to be bonded 21 is specifically electrically connected to the driving circuit. The microelectronic device 30 can be, for example, a Micro LED chip or other micro-devices with similar bonding and repair requirements. The device body 32 is, for example, the chip body structure of a Micro LED, and the multiple semiconductor layers 324 it includes can include, for example, an N-type semiconductor layer, an MQW layer (multiple quantum well), and a P-type semiconductor layer, etc. The N-type semiconductor layer, the MQW layer, and the P-type semiconductor layer can all be provided in multiple layers. Of course, in addition to the multiple semiconductor layers 324, the device body 32 can also have, for example, a reflective layer, an ohmic contact layer, an insulating layer, etc. The layers included in the device body 32 can be set with reference to the structure of a traditional Micro LED chip. The bottom surface 321 and the top surface 322 are two surfaces of the device body 32 that are opposite in the stacking direction. The second electrode to be bonded 31 can be an N electrode connected to the N-type semiconductor layer in the device body 32, or a P electrode connected to the P-type semiconductor layer in the device body 32; or both the N electrode and the P electrode are the second electrode to be bonded 31.

[0049] At least a part of the second electrode to be bonded 31 is located on the chip side surface 323, that is, the second electrode to be bonded 31 can be entirely located on the chip side surface 323, can extend from the bottom surface 321 to the chip side surface 323, can also extend from the top surface 322 to the chip side surface 323, or can extend from the top surface 322 to the chip side surface 323 and then to the bottom surface 321 (refer to Figure 8a ). Taking the N electrode and the P electrode as an example, one of the N electrode and the P electrode can be provided on the chip side surface 323, and the other can be provided on the bottom surface 321 (refer to Figure 7 ). When both the N electrode and the P electrode are the second electrode to be bonded 31, the N electrode and the P electrode can be provided on two opposite chip side surfaces 323 or on two adjacent chip side surfaces 323, which can increase the distance between the N electrode and the P electrode. One of the N electrode and the P electrode can be entirely provided on the chip side surface 323, and the other of the N electrode and the P electrode can extend from the bottom surface 321 or the top surface 322 to the chip side surface 323. The part of the second electrode to be bonded 31 located on the chip side surface 323 can increase the coverage area of the electrode material, can reduce the resistance, and the contact area with the first electrode to be bonded 21 during subsequent bonding. In some scenarios, the part of the second electrode to be bonded 31 located on the chip side surface 323 can also be used to connect multiple semiconductor layers of the same type (for example, connecting two N-type semiconductor layers).

[0050] It should be noted that there may be a necessary insulating layer between the second electrode to be bonded 31 and the side surface 323 of the chip, so that the second electrode to be bonded 31 is only electrically connected to some of the semiconductor layers 324 among the multiple semiconductor layers 324, and is insulated from other semiconductor layers 324. For example, for the N electrode, it is only electrically connected to the N-type semiconductor layer, and is insulated from the P-type semiconductor layer and the MQW layer through an insulating layer.

[0051] During the bonding or repair process of the microelectronic device 30, the micro-bonding device 10 can be transferred to the first electrode to be bonded 21 by means of laser-assisted transfer or the like, so that the micro-bonding device 10 is first inserted into the first electrode to be bonded 21. Then, the microelectronic device 30 is transferred to the micro-bonding device 10 by means of laser-assisted transfer or the like. During laser-assisted transfer, the adhesive material on the transfer carrier vaporizes after being irradiated by the laser to release the micro-bonding device 10 or the microelectronic device 30, which can provide a certain flying speed, so that the micro-bonding device 10 is inserted into the first electrode to be bonded 21, and the second electrode to be bonded 31 is inserted into the micro-bonding device 10, thereby obtaining the bonding backplane 100 provided in the above embodiment of the present invention. This inserted structure enables the use of bonding methods that do not require high temperatures such as conductive adhesive connection or welding, so that the impact on other adjacent devices can be reduced during the bonding or repair process.

[0052] Specifically, referring to Figure 3 and Figure 4 , in one embodiment, the main body portion 11 includes a first surface 111 and a second surface 112 that are opposite in the first direction. The plurality of micro-connectors 12 include a plurality of first micro-pins 121 protruding from the first surface 111 and a plurality of second micro-pins 122 protruding from the second surface 112. The plurality of first micro-pins 121 are respectively inserted into the first electrodes to be bonded 21. The plurality of second micro-pins 122 are respectively inserted into the second electrodes to be bonded 31. The micro-bonding device 10 is made of a metal conductive material such as copper or nickel, and is integrally in the shape of a metal block. Referring to Figure 4, the main body portion 11 has a first height dimension H1 in the first direction and a first width dimension W1 in the second direction. The second direction is perpendicular to the first direction. The main body portion 11 is, for example, a cuboid structure, and the first width dimension W1 is the length or width of the first surface (or the second surface), which is related to the dimensions of the first electrode to be bonded 21 and the second electrode to be bonded 31. The range of the first width dimension W1 is 1 to 5 micrometers. The first height dimension H1 is the height of the cuboid. The first height dimension H1 is 1 to 3 micrometers. The height H2 by which the plurality of first micro needles 121 and the plurality of second micro needles 122 protrude from the main body portion 11 respectively ranges from 100 to 1000 nanometers. Each of the plurality of first micro needles 121 and each of the plurality of second micro needles 122 have a second width dimension W2 in the second direction, and the range of the second width dimension is 100 to 1000 nanometers. The plurality of first micro needles 121 and the plurality of second micro needles 122 are, for example, spiky structures and can penetrate the first electrode to be bonded 21 and the second electrode to be bonded 31 to achieve plugging.

[0053] In one embodiment, the micro bonding device 10 further includes a first flying wing 131 and a second flying wing 132 symmetrically arranged on opposite sides of the main body portion 11 in the second direction, and the second direction is perpendicular to the first direction. The first flying wing 131 and the second flying wing 132 extend along the first direction respectively. Referring to Figure 4 the orientation in, the first flying wing 131 and the second flying wing 132 are symmetrically arranged on the left and right sides of the main body portion 11, and the first flying wing 131 and the second flying wing 132 extend along the up and down direction respectively to form a wing-like structure. The first flying wing 131 and the second flying wing 132 can collimate the flight path when the transfer carrier releases the micro bonding device 10 onto the first electrode to be bonded 21. Further, a first guiding groove 113 and a second guiding groove 114 symmetrically arranged in the third direction are formed on the main body portion 11, and the third direction is perpendicular to the first direction. The first guiding groove 113 and the second guiding groove 114 penetrate the first surface 111 and the second surface 112 along the first direction respectively. To further collimate the flight path. Wherein the third direction may be the same as or different from the aforementioned second direction. For example, referring to Figure 3 the orientation shown, the first flying wing 131 and the second flying wing 132 are symmetric in the front and back direction, and the first guiding groove 113 and the second guiding groove 114 are symmetric in the left and right direction. At this time, the second direction and the third direction are perpendicular to each other. Or in some embodiments, the first guiding groove 113 and the second guiding groove 114 may also be arranged to be symmetric in the front and back direction as shown in Figure 3 At this time, the second direction and the third direction are the same. This embodiment is not limited thereto.

[0054] In some embodiments, the main body portion 11 includes a first surface 111 and a second surface 112 that are opposite to each other in a first direction, and side surfaces 115 (refer to Figure 5 ) located between the first surface 111 and the second surface 112. The plurality of micro-plug connectors 12 are a plurality of blades that respectively protrude from the side surfaces 115 and surround the main body portion 11. Each micro-plug connector 12 among the plurality of micro-plug connectors 12 includes a first plug end 123 and a second plug end 124 that are opposite to each other in the first direction. The first plug end 123 is plugged into the first electrode to be bonded 21, and the second plug end 124 is plugged into the second electrode to be bonded 31. The main body portion 11 is, for example, a columnar structure. Eight blade-shaped micro-plug connectors 12 are arranged around the main body portion 11. According to the orientation shown in Figure 5 , the upper end of each micro-plug connector 12 is the first plug end 123, and the lower end is the second plug end 124. In some embodiments, the main body portion 11 has a third width dimension W3 in a second direction. The second direction is perpendicular to the first direction. For example, the main body portion 11 is a columnar structure, and the diameter of this columnar structure is the third width dimension W3. When the main body portion 11 is the solid columnar structure shown in Figure 5 , the third width dimension W3 is 100 to 1000 nanometers. The blade length W4 of each micro-plug connector 12 protruding from the side surface 115 is 1 to 2 micrometers. The overall height of the micro-bonding device 10 (the distance between the first surface 111 and the second surface) is 1 to 3 micrometers. The thickness D of each micro-plug connector 12 is, for example, 100 to 1000 nm.

[0055] In other embodiments, the main body portion 11 is a hollow columnar structure. Refer to Figure 6 . A through hole 116 is provided on the main body portion 11 that penetrates from the first surface 111 to the second surface 112. In this embodiment, the third width dimension W3 is 1 to 3 micrometers. The blade length W4 of each micro-plug connector 12 protruding from the side surface 115 is 0.5 to 1 micrometer. The main body portion 11 has a relatively large size to ensure the overall structural stability of the micro-bonding device 10. At the same time, the setting of the through hole 116 makes the main body portion 11 have a relatively thin wall thickness, which is more conducive to plugging.

[0056] In one embodiment, each micro-plug connector 12 includes a blade middle portion 125 located between the first plug end 123 and the second plug end 124. The thicknesses of both the first plug end 123 and the second plug end 124 are less than or equal to the thickness of the blade middle portion 125. Setting the first plug end 123 and the second plug end 124 to be thinner than the thickness of the blade middle portion is more conducive to plugging.

[0057] In some embodiments, continue to refer to Figure 1, the second electrode to be bonded 31 has a chip electrode side portion 311 provided on the side surface 323 of the chip. The micro-bonding device 10 is respectively inserted into one end of the chip electrode side portion 311 and the first electrode to be bonded 21. The chip electrode side portion 311 can be set to be inclined (refer to Figure 1 ) or not inclined (refer to Figure 9 ) according to the shape of the device body 32, which is not limited in this embodiment.

[0058] In some embodiments, refer to Figure 7 , the second electrode to be bonded 31 has a chip electrode side portion 311 provided on the side surface 323 of the chip and a chip electrode bottom portion 312 provided on the bottom surface 321. The chip electrode bottom portion 312 is connected to the chip electrode side portion 311. The micro-bonding device 10 is respectively inserted into the chip electrode bottom portion 312 and the first electrode to be bonded 21. The chip electrode bottom portion 312 can increase the contact area between the micro-bonding device 10 and the second electrode to be bonded 31, reduce the difficulty of inserting the micro-bonding device 10 into the second electrode to be bonded 31, and make the bonding more stable. The chip electrode side portion 311 can increase the overall area of the second electrode to be bonded 31 and has a better conductive transmission effect.

[0059] In some embodiments, refer to Figure 8a , the second electrode to be bonded 31 has a chip electrode side portion 311 provided on the side surface 323 of the chip and a chip electrode top portion 313 provided on the top surface 322. The plurality of semiconductor layers 324 include a first semiconductor layer 3241 and a second semiconductor layer 3242. The second semiconductor layer 3242 is located between the first semiconductor layer 3241 and the bottom surface 321. The chip electrode top portion 313 is electrically connected to the second semiconductor layer 3242 and insulated from the first semiconductor layer 3241. The second electrode to be bonded 31 further includes a chip electrode bottom portion 312 connected to one end of the chip electrode side portion 311 away from the chip electrode top portion 313. The micro-bonding device 10 is respectively inserted into the chip electrode bottom portion 312 and the first electrode to be bonded 21. Among them, the first semiconductor layer 3241 can be an N-type semiconductor layer, then the second semiconductor layer 3242 is a P-type semiconductor layer, or vice versa, the first semiconductor layer 3241 is a P-type semiconductor layer and the second semiconductor layer 3242 is an N-type semiconductor layer. The second electrode to be bonded 31 can be insulated from the first semiconductor layer 3241 through the passivation layer 325. By setting the second electrode to be bonded 31 to a structure extending from the top surface 322 to the side surface 323 of the chip and finally to the bottom surface 321, and combining with the micro-bonding device 10, the bonding of some specific forms of microelectronic devices 30 can be realized more conveniently.

[0060] In some embodiments, the multiple semiconductor layers 324 include a first semiconductor layer 3241, an active layer 3243, and a second semiconductor layer 3242. The first semiconductor layer 3241 has a bottom surface 321, a top surface 322, and a chip side surface 323. The active layer 3243 covers the bottom surface 321 and the chip side surface 323. The second semiconductor layer 3242 covers the active layer 3243. For example, if the first semiconductor layer 3241 is an N-type semiconductor layer, then the second semiconductor layer 3242 is a P-type semiconductor layer; if the first semiconductor layer 3241 is a P-type semiconductor layer, then the second semiconductor layer 3242 is an N-type semiconductor layer. The active layer 3243 is, for example, an MQW layer. Taking the first semiconductor layer 3241 as a hexahedron structure as an example, the active layer 3243 covers five parallel surfaces of the first semiconductor layer 3241 except the bottom surface 321. The second semiconductor layer 3242 covers the outside of the active layer 3243 in the same manner as the active layer 3243.

[0061] In some embodiments, with continued reference to Figure 8b , the device body 32 further includes a passivation layer 325 covering the second semiconductor layer 3242. The second bonding electrode 31 includes a first-polarity electrode 31a and a second-polarity electrode 31b. The second-polarity electrode 31b passes through the passivation layer 325 and is electrically connected to the second semiconductor layer 3242. The first-polarity electrode 31a is insulated from the second semiconductor layer 3242 by the passivation layer 325, and the first-polarity electrode 31a is electrically connected to the first semiconductor layer 3241. At least a part of at least one of the first-polarity electrode 31a and the second-polarity electrode 31b is disposed on the chip side surface 323. The type of the first-polarity electrode 31a corresponds to the type of the first semiconductor layer 3241, and the type of the second-polarity electrode 31b corresponds to the type of the second semiconductor layer 3242. When the first semiconductor layer 3241 is an N-type semiconductor layer and the second semiconductor layer 3242 is a P-type semiconductor layer, the first-polarity electrode 31a is an N electrode, and the second-polarity electrode 31b is a P electrode.

[0062] Specifically, the passivation layer 325 has a bottom passivation layer corresponding to the bottom surface 321 and a side passivation layer corresponding to the chip side surface 323. An opening for the second-polarity electrode 31b to pass through is provided on the bottom passivation layer, so that the second-polarity electrode 13b can be disposed on one side of the bottom surface 321 and connected to the second semiconductor layer 3242. The first-polarity electrode 31a partially covers one side of the chip side surface 323 and partially extends to one side of the bottom surface 321. The first-polarity electrode 31a is insulated from the second semiconductor layer 3242 by the passivation layer 325. The passivation layer 325, for example, has a top passivation layer corresponding to the top surface 322. With reference to Figure 8b, the connection between the first polar electrode 31a and the first semiconductor layer 3241 can be achieved by providing an opening in the top passivation layer and disposing a transparent electrode 326 on the top surface 322 to connect through the top passivation layer to the first semiconductor layer 3241, and the transparent electrode 326 extends to the end of the first polar electrode 31a near the top surface 322 to connect with the first polar electrode 31a. Refer to Figure 8b As shown in the structure, the microelectronic device 30 can respectively bond the portions of the first polar electrode 31a and the second polar electrode 31b disposed on one side of the bottom surface 321 to the substrate 20 through the micro-bonding device 10. The light emitted by the microelectronic device 30 can pass through the transparent electrode 326 and exit from the side of the top surface 322 away from the bottom surface 321.

[0063] Refer to Figure 8c , in some embodiments, the transparent electrode 326 may not be provided. Through holes are formed in the portions of the active layer 3243 and the second semiconductor layer 3242 located on the bottom surface 321, and the passivation layer 325 extends to the side walls of the through holes. The first polar electrode 31a extends into the through hole to connect with the first semiconductor layer 3241 and is insulated from the active layer 3243 and the second semiconductor layer 3242 through the portion of the passivation layer 325 extending to the side walls of the through hole.

[0064] In other embodiments, refer to Figure 8d , the plurality of semiconductor layers 324 include a first semiconductor layer 3241, an active layer 3243, and a second semiconductor layer 3242. The first semiconductor layer 3241 has a bottom surface 321, a top surface 322, and a chip side surface 323. The active layer 3243 and the second semiconductor layer 3242 are sequentially stacked on the bottom surface 321. And the orthographic projection areas of the active layer 3243 and the second semiconductor layer 3242 on the bottom surface 321 are smaller than the area of the bottom surface 321. The second electrode to be bonded 31 includes a first polar electrode 31a and a second polar electrode 31b. The second polar electrode 31b is disposed on the side of the second semiconductor layer 3242 away from the active layer 3243 and is electrically connected to the second semiconductor layer 3242. The first polar electrode 31a is at least partially disposed on the chip side surface 323 and is electrically connected to the first semiconductor layer 3241.

[0065] In some embodiments, continuing to refer to Figure 8d , the device body 32 further includes a passivation layer 325 disposed on the bottom surface 321. The first polar electrode 31a includes a chip electrode side portion 311 disposed on the chip side surface 323 and a chip electrode bottom portion 312 disposed on the side of the passivation layer 325 facing away from the bottom surface 321. The chip electrode bottom portion 312 and the second polar electrode 31b can be respectively bonded and connected to the substrate 20 through the micro-bonding device 10.

[0066] In some embodiments, reference can be made to Figure 9 andFigure 10 A groove 22 is formed on a substrate 20. The first electrode to be bonded 21 includes a substrate electrode bottom 211 disposed at the bottom of the groove 22. The microelectronic device 30 is disposed within the groove 22. The micro-bonding device 10 is respectively inserted into the second electrode to be bonded 31 and the substrate electrode bottom 211. Wherein the substrate 20 specifically includes a driving circuit board 24 and a pixel defining layer 25 disposed on the driving circuit board 24. A driving circuit is disposed on the driving circuit board 24. The first electrode to be bonded 21 is electrically connected to the driving circuit on the driving circuit board 24, for example, specifically through the substrate electrode bottom 211. By forming the groove 22, the microelectronic device 30 can not only be stably bonded through the micro-bonding device 10, but also be limited by being embedded in the groove 22, so as to improve the bonding effect.

[0067] Specifically, the first electrode to be bonded 21 further includes a substrate electrode side portion 212 disposed on the side wall of the groove 22, and the substrate electrode side portion 212 is connected to the substrate electrode bottom 211. The second electrode to be bonded 31 includes a chip electrode side portion 311 located on the side surface 323 of the chip, and the chip electrode side portion 311 is connected to the substrate electrode side portion 212. The substrate electrode side portion 212 can be provided only corresponding to one of the N electrode and the P electrode of the microelectronic device 30 according to actual requirements (such as Figure 9 ), or the substrate electrode side portion 212 can be provided corresponding to both the N electrode and the P electrode of the microelectronic device 30 (such as Figure 10 ). By providing the substrate electrode side portion 212, the contact area between the first electrode to be bonded 21 and the second electrode to be bonded 31 can be increased, and a better conduction effect can be achieved.

[0068] In some embodiments, reference may also be made to Figure 11 and Figure 12 , the first electrode to be bonded 21 includes a substrate electrode bottom 211 disposed on the substrate 20, and a substrate electrode side portion 212 extending away from the substrate 20 along the substrate electrode bottom 211. The micro-bonding device 10 is respectively inserted into the substrate electrode bottom 211 and the second electrode to be bonded 31. The second electrode to be bonded 31 has a chip electrode side portion 311 disposed on the side surface 323 of the chip, and the chip electrode side portion 311 is connected to the substrate electrode side portion 212. In this embodiment, by forming the substrate electrode side portion 212 by the first electrode to be bonded itself, while increasing the contact area between the first electrode to be bonded 21 and the second electrode to be bonded 31, the production of the pixel defining layer 25 can be saved and the cost can be reduced.

[0069] More specifically, a plurality of second electrodes to be bonded 31 in each microelectronic device 30 correspond to and are bonded to a plurality of first electrodes to be bonded 21 one by one. Refer to Figure 12, the substrate electrode side portions 212 of a plurality of first electrodes to be bonded 21 corresponding to the same microelectronic device 30 jointly enclose a receiving groove 23, and the microelectronic device 30 is disposed in the receiving groove 23. For example, if there are two second electrodes to be bonded 31 (an N electrode and a P electrode respectively) corresponding to each microelectronic device 30, then there are two first electrodes to be bonded 21 corresponding to one microelectronic device 30. Refer to Figure 11 and Figure 12 , the substrate electrode side portions 212 of the two first electrodes to be bonded 21 are disposed opposite to each other, so that the microelectronic device 30 can be clamped between the two substrate electrode side portions 212. In this way, the contact surface between the first electrode to be bonded 21 and the second electrode to be bonded 31 can be increased by the two substrate electrode side portions 212, and the microelectronic device 30 can be limited, so that the microelectronic device 30 can be firmly bonded to the substrate 20, and there is no need to use methods such as conductive glue and solder that require high-temperature heating, which can reduce the influence on adjacent devices during the bonding or repair process.

[0070] Refer to Figure 13 , an embodiment of the present invention further provides a display device 200, including the bonding backplane 100 of any one of the foregoing, wherein the microelectronic device 30 is a micro light-emitting device. The display device 200 has the same beneficial effects as the bonding backplane 100, which will not be described herein again.

[0071] An embodiment of the present invention further provides a display device, including the foregoing display device 200. The display device can be a terminal device with a display function such as a mobile phone, a computer, a vehicle-mounted display screen, etc. It has the same beneficial effects as the foregoing bonding backplane 100, which will not be described herein again.

[0072] The above is only a preferred embodiment of the present invention, and does not impose any form of limitation on the present invention. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some changes or modifications to the equivalent embodiments with equivalent changes within the scope of the technical solution of the present invention. However, as long as it does not depart from the technical solution content of the present invention, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A binding backplane (100), characterized in that, Comprising: A substrate (20) having a first electrode to be bonded (21); A microelectronic device (30) having a device body (32) and a second electrode to be bonded (31), the device body (32) having a bottom surface (321) and a top surface (322) opposite to each other in the stacking direction, and a chip side surface (323) adjacent to the bottom surface (321) and the top surface (322); the device body (32) includes a plurality of semiconductor layers (324) stacked in the stacking direction; the second electrode to be bonded (31) is electrically connected to the device body (32) and at least partially disposed on the chip side surface (323) of the device body (32); A micro-bonding device (10) disposed between the first electrode to be bonded (21) and the second electrode to be bonded (31), the micro-bonding device (10) includes a main body portion (11) and a plurality of micro-insertion members (12), the plurality of micro-insertion members (12) protrude from the main body portion (11) and are spaced apart from each other; at least some of the plurality of micro-insertion members (12) are inserted into the first electrode to be bonded (21), and at least some of the plurality of micro-insertion members (12) are inserted into the second electrode to be bonded (31), so that the first electrode to be bonded (21) and the second electrode to be bonded (31) are mutually bonded.

2. The bonding backplane (100) according to claim 1, wherein The second electrode to be bonded (31) has a chip electrode side portion (311) disposed on the chip side surface (323); the micro-bonding device (10) is respectively inserted into one end of the chip electrode side portion (311) and the first electrode to be bonded (21).

3. The bonded backplane (100) according to claim 1, characterized in that, The second electrode to be bonded (31) has a chip electrode side portion (311) disposed on the chip side surface (323) and a chip electrode bottom portion (312) disposed on the bottom surface (321), the chip electrode bottom portion (312) is connected to the chip electrode side portion (311); the micro-bonding device (10) is respectively inserted into the chip electrode bottom portion (312) and the first electrode to be bonded (21).

4. The bonded backplane (100) according to claim 1, characterized in that, The second electrode to be bonded (31) has a chip electrode side portion (311) disposed on the chip side surface (323) and a chip electrode top portion (313) disposed on the top surface (322), the plurality of semiconductor layers (324) includes a first semiconductor layer (3241) and a second semiconductor layer (3242), the second semiconductor layer (3242) is located between the first semiconductor layer (3241) and the bottom surface (321), the chip electrode top portion (313) is electrically connected to the second semiconductor layer (3242) and insulated from the first semiconductor layer (3241); the second electrode to be bonded (31) further includes a chip electrode bottom portion (312) connected to one end of the chip electrode side portion (311) away from the chip electrode top portion (313), the micro-bonding device (10) is respectively inserted into the chip electrode bottom portion (312) and the first electrode to be bonded (21).

5. The bonding backplane (100) according to claim 1, characterized in that A groove (22) is formed on the substrate (20), and the first electrode to be bonded (21) includes a bottom portion of the substrate electrode (211) disposed at the bottom of the groove (22); the microelectronic device (30) is disposed within the groove (22); the micro-bonding device (10) is respectively plugged into the second electrode to be bonded (31) and the bottom portion of the substrate electrode (211).

6. The bonding backplane (100) according to claim 5, characterized in that, The first electrode to be bonded (21) further includes a side portion of the substrate electrode (212) disposed on the side wall of the groove (22), and the side portion of the substrate electrode (212) is connected to the bottom portion of the substrate electrode (211); the second electrode to be bonded (31) includes a side portion of the chip electrode (311) located on the side surface (323) of the chip, and the side portion of the chip electrode (311) is connected to the side portion of the substrate electrode (212).

7. The bonded backplane (100) according to claim 1, characterized in that, The first electrode to be bonded (21) includes a bottom portion of the substrate electrode (211) disposed on the substrate (20), and a side portion of the substrate electrode (212) extending away from the substrate (20) along the bottom portion of the substrate electrode (211); the micro-bonding device (10) is respectively plugged into the bottom portion of the substrate electrode (211) and the second electrode to be bonded (31); the second electrode to be bonded (31) has a side portion of the chip electrode (311) disposed on the side surface (323) of the chip, and the side portion of the chip electrode (311) is connected to the side portion of the substrate electrode (212).

8. The bonded backplane (100) according to claim 7, wherein, A plurality of second electrodes to be bonded (31) in each of the microelectronic devices (30) correspond to and are bonded to a plurality of the first electrodes to be bonded (21) one by one; the side portions of the substrate electrodes (212) of the plurality of first electrodes to be bonded (21) corresponding to the same microelectronic device (30) jointly enclose a receiving groove (23), and the microelectronic device (30) is disposed within the receiving groove (23).

9. The bonded backplane (100) according to claim 1, characterized in that, The main body portion (11) includes a first surface (111) and a second surface (112) opposite to each other in a first direction; the plurality of micro-plugging members (12) include a plurality of first micro-pins (121) protruding from the first surface (111) and a plurality of second micro-pins (122) protruding from the second surface (112), and the plurality of first micro-pins (121) are respectively plugged into the first electrodes to be bonded (21); the plurality of second micro-pins (122) are respectively plugged into the second electrodes to be bonded (31).

10. The bonding backplane (100) according to claim 1, wherein, The main body portion (11) includes a first surface (111) and a second surface (112) opposite to each other in a first direction, and side surfaces (115) located between the first surface (111) and the second surface (112); the plurality of micro-insertion connectors (12) are a plurality of blades respectively protruding from the side surfaces (115) and arranged around the main body portion (11), and each of the plurality of micro-insertion connectors (12) includes a first insertion end (123) and a second insertion end (124) opposite to each other in the first direction; the first insertion end (123) is inserted into the first electrode to be bonded (21), and the second insertion end (124) is inserted into the second electrode to be bonded (31).

11. The binding backplane (100) according to claim 1, characterized in that, The plurality of semiconductor layers (324) include a first semiconductor layer (3241), an active layer (3243), and a second semiconductor layer (3242), and the first semiconductor layer (3241) has the bottom surface (321), the top surface (322), and the chip side surface (323); the active layer (3243) covers the bottom surface (321) and the chip side surface (323); the second semiconductor layer (3242) covers the active layer (3243).

12. The bonded backplane (100) as claimed in claim 11, wherein, The device body (32) further includes a passivation layer (325) covering the second semiconductor layer (3242); the second electrode to be bonded (31) includes a first-polarity electrode (31a) and a second-polarity electrode (31b); the second-polarity electrode (31b) passes through the passivation layer (325) and is electrically connected to the second semiconductor layer (3242); the first-polarity electrode (31a) is insulated from the second semiconductor layer (3242) through the passivation layer (325), and the first-polarity electrode (31a) is electrically connected to the first semiconductor layer (3241); at least a part of at least one of the first-polarity electrode (31a) and the second-polarity electrode (31b) is disposed on the chip side surface (323).

13. The bonded backplane (100) according to claim 1, characterized in that, The plurality of semiconductor layers (324) includes a first semiconductor layer (3241), an active layer (3243), and a second semiconductor layer (3242). The first semiconductor layer (3241) has the bottom surface (321), the top surface (322), and the chip side surface (323). The active layer (3243) and the second semiconductor layer (3242) are sequentially stacked on the bottom surface (321). And the orthographic projection areas of the active layer (3243) and the second semiconductor layer (3242) on the bottom surface (321) are smaller than the area of the bottom surface (321). The second electrode to be bonded (31) includes a first-polarity electrode (31a) and a second-polarity electrode (31b). The second-polarity electrode (31b) is disposed on a side of the second semiconductor layer (3242) away from the active layer (3243) and is electrically connected to the second semiconductor layer (3242). The first-polarity electrode (31a) is at least partially disposed on the chip side surface (323) and is electrically connected to the first semiconductor layer (3241).

14. A display device (200), characterized in that, Comprising: The bonding backplane (100) according to any one of claims 1 to 13, wherein the microelectronic device (30) is a micro-light-emitting device.

15. A display device, characterized in that, Comprising the display device according to claim 14.

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