Quick exhaust structure of electrostatic chuck of semiconductor processing vacuum cavity

Abstract

The utility model discloses an electrostatic chuck rapid exhaust structure of a semiconductor process vacuum chamber, which is characterized in that a filter box I and a filter box II are arranged on the lower surface of a vacuum chamber body and are connected through a connecting plate, the filter box I is communicated with the filter box II through a connecting pipe III, and guide plates are fixedly connected in the filter box I and the filter box II; a plurality of filter screens are arranged on the upper surface and the lower surface of the guide plate, second fixing plates are fixedly connected to the two ends of each filter screen, the first filter box communicates with the vacuum chamber body through a second connecting pipe, a first connecting pipe is fixedly connected to the lower surface of the second filter box, and an inert gas control conveying module is fixedly connected to the end, away from the second filter box, of the first connecting pipe. According to the inert gas recycling device, the inert gas can be conveniently filtered when the inert gas is conveyed or flows back, tiny dust generated in the machining process or particulate matter in a cavity is prevented from being sucked along with recycling flowing, and the influence on the quality of manufactured products when the inert gas is used next time is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of a rapid exhaust structure of an electrostatic chuck in a semiconductor manufacturing vacuum chamber, and particularly relates to a rapid exhaust structure of an electrostatic chuck in a semiconductor manufacturing vacuum chamber. Background Art

[0002] In the existing rapid exhaust structure of an electrostatic chuck in a semiconductor manufacturing vacuum chamber, during use, an auxiliary air extraction device group is provided to facilitate the extraction of inert gas. However, during use, particulate matters generated during processing inside the vacuum chamber body and remaining inside the vacuum chamber body are easily mixed in the inert gas, which is likely to affect the quality of the product during the next use, thereby causing defects. For example, a Chinese patent discloses a "rapid exhaust structure of an electrostatic chuck in a semiconductor manufacturing vacuum chamber" with the application number: "CN202321161212.9". It is provided with a vacuum chamber body, an electrostatic chuck group, an inert gas supply module, and an auxiliary air extraction device group for easy use. However, during use, particulate matters generated during processing inside the vacuum chamber body and remaining inside the vacuum chamber body are easily mixed in the inert gas, which is likely to affect the quality of the product during the next use, thereby causing defects, and there are limitations in use. Summary of the Utility Model

[0003] An object of the utility model is to solve at least one of the technical problems existing in the prior art, and provide a rapid exhaust structure of an electrostatic chuck in a semiconductor manufacturing vacuum chamber. By providing a vacuum chamber body, a connecting plate, a connecting plate, a second filter box, a third connecting pipe, a flow guide plate, a filter screen, a second fixing plate, a second connecting pipe, a second exhaust valve, a fourth exhaust valve, a first connecting pipe, and an inert gas control and conveying module, it is convenient to filter the inert gas during the transportation or reflux of the inert gas, avoid the fine dust generated during wafer processing or the particulate matters inside the cavity from being sucked along with the recycling flow, and avoid affecting the quality of the manufactured product when using the inert gas next time.

[0004] The present utility model also provides a rapid exhaust structure for an electrostatic chuck of a semiconductor manufacturing vacuum chamber having the above-described semiconductor manufacturing vacuum chamber, comprising: a vacuum chamber body, a connecting plate fixedly connected to the lower surface of the vacuum chamber body, a first filter box fixedly connected to the lower surface of the connecting plate, another connecting plate fixedly connected to the lower surface of the first filter box, a second filter box fixedly connected to the lower surface of the other connecting plate, the first filter box and the second filter box having the same structure and being connected and communicated through a third connecting pipe, a flow guiding plate fixedly connected inside both the first filter box and the second filter box, a plurality of filter meshes provided on both the upper and lower surfaces of the flow guiding plate, both ends of the filter mesh fixedly connected to a second fixing plate, the second fixing plate being slidably connected to the first filter box and the second filter box, the first filter box being connected and communicated with the vacuum chamber body through a second connecting pipe, an exhaust valve two and an exhaust valve four respectively provided on the second connecting pipe and the third connecting pipe, a first connecting pipe fixedly connected to the lower surface of the second filter box, and an inert gas control and delivery module fixedly connected to one end of the first connecting pipe away from the second filter box. Through the above structure, it is convenient to filter the inert gas during the delivery or reflux of the inert gas, avoiding the microparticles generated during wafer processing or the particulate matter in the chamber from being sucked along with the recycled flow, and avoiding affecting the quality of the manufactured product when using the inert gas next time.

[0005] According to the rapid exhaust structure for an electrostatic chuck of a semiconductor manufacturing vacuum chamber of the present utility model, a recovery pipe is fixedly connected to the side surface of the vacuum chamber body, the recovery pipe is connected and communicated with the vacuum chamber body, one end of the recovery pipe away from the vacuum chamber body is connected and communicated with the second connecting pipe, and the connection point is located below the second connecting pipe. An exhaust valve one and an exhaust valve three are provided on the recovery pipe. Through the above structure, it is convenient to recover the inert gas.

[0006] According to the rapid exhaust structure for an electrostatic chuck of a semiconductor manufacturing vacuum chamber of the present utility model, a communicating pipe is fixedly connected to the lower surface of the vacuum chamber body, and a vacuum pump is fixedly connected to one end of the communicating pipe away from the vacuum chamber body. Through the above structure, it is convenient to evacuate the vacuum chamber body and facilitate use.

[0007] According to the rapid exhaust structure for an electrostatic chuck of a semiconductor manufacturing vacuum chamber of the present utility model, a rotating column is rotatably connected to both the first filter box and the second filter box, and a sealing door is fixedly connected to the side surface of the rotating column. Through the above structure, it is convenient to open the sealing door.

[0008] According to the rapid exhaust structure for an electrostatic chuck of a semiconductor manufacturing vacuum chamber of the present utility model, a first fixing plate is fixedly connected to the side surface of the second fixing plate, and a pulling block is fixedly connected to the side surface of the first fixing plate. The pulling block is located between the first filter box, the second filter box and the sealing door. Through the above structure, it is convenient to pull out the filter mesh inside the first filter box and the second filter box for cleaning or replacement.

[0009] A rapid exhaust structure for an electrostatic chuck in a semiconductor process vacuum chamber according to the present utility model, anti-permeation plates are fixedly connected to both side surfaces of the fixed plate. The fixed plate two is located between the anti-permeation plate and the filter box one and the filter box two. Through the above structure, it is convenient to prevent gas from permeating from the edge of the fixed plate two.

[0010] A rapid exhaust structure for an electrostatic chuck in a semiconductor process vacuum chamber according to the present utility model, a sleeve column is fixedly connected inside the vacuum chamber body. The connecting pipe two is located inside the sleeve column. One end of the connecting pipe two far from the filter box one is connected to an electrostatic chuck group. The electrostatic chuck group is arranged inside the vacuum chamber body. A wafer is placed on the electrostatic chuck group. Through the above structure, it is convenient to adsorb the wafer and facilitate processing.

[0011] A rapid exhaust structure for an electrostatic chuck in a semiconductor process vacuum chamber according to the present utility model, a rotating shaft is rotatably connected to the vacuum chamber body. A sealing cover plate is fixedly connected to the side surface of the rotating shaft. Through the above structure, it is convenient to seal and thus convenient to use.

[0012] Advantageous effects:

[0013] Compared with the prior art, for this rapid exhaust structure of the electrostatic chuck in the semiconductor process vacuum chamber, by providing a vacuum chamber body, a connecting plate, a connecting plate, a filter box two, a connecting pipe three, a diversion plate, a filter screen, a fixed plate two, a connecting pipe two, an exhaust valve two and an exhaust valve four, a connecting pipe one, and an inert gas control and delivery module, it is convenient to filter the inert gas during the delivery or reflux of the inert gas, avoiding the fine dust generated during wafer processing or the particulate matter in the cavity from being sucked along with the recycling flow, and avoiding affecting the quality of the manufactured products when using the inert gas next time. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present utility model will be further described below in conjunction with the drawings and embodiments;

[0015] Figure 1 It is the overall structure diagram of the rapid exhaust structure of the electrostatic chuck in the semiconductor process vacuum chamber of the present utility model;

[0016] Figure 2 It is the bottom view structure diagram of the rapid exhaust structure of the electrostatic chuck in the semiconductor process vacuum chamber of the present utility model;

[0017] Figure 3 It is the plan view structure diagram of the rapid exhaust structure of the electrostatic chuck in the semiconductor process vacuum chamber of the present utility model;

[0018] Figure 4 It is the transverse sectional view structure diagram of the rapid exhaust structure of the electrostatic chuck in the semiconductor process vacuum chamber of the present utility model;

[0019] Figure 5 This is a longitudinal sectional view structure diagram of a rapid exhaust structure of an electrostatic chuck in a semiconductor process vacuum chamber of the present utility model.

[0020] Legend description:

[0021] 1. Vacuum chamber body; 2. Sealing cover plate; 3. Rotating shaft; 4. Recovery pipe; 5. Exhaust valve I; 6. Connecting pipe; 7. Vacuum pump; 8. Filter box I; 9. Filter box II; 10. Connecting pipe I; 11. Inert gas control and delivery module; 12. Connecting plate; 13. Sealing door; 14. Rotating column; 15. Exhaust valve II; 16. Connecting pipe II; 17. Sleeve column; 18. Exhaust valve III; 19. Filter screen; 20. Deflector; 21. Fixed plate I; 22. Pulling block; 23. Connecting pipe III; 24. Exhaust valve IV; 25. Fixed plate II; 26. Anti-permeation plate; 27. Electrostatic chuck group. Specific implementation manners

[0022] This part will describe in detail the specific embodiments of the present utility model. The preferred embodiments of the present utility model are shown in the drawings. The function of the drawings is to supplement the description in the text part of the specification, enabling people to intuitively and vividly understand each technical feature and the overall technical solution of the present utility model, but it should not be construed as a limitation on the protection scope of the present utility model.

[0023] Refer to Figures 1-5, an electrostatic chuck rapid exhaust structure for a semiconductor process vacuum chamber according to an embodiment of the present utility model, which includes: a vacuum chamber body 1, a connecting plate 12 is fixedly connected to the lower surface of the vacuum chamber body 1, a first filter box 8 is fixedly connected to the lower surface of the connecting plate 12, the first filter box 8 is fixed, a lower surface of the first filter box 8 is fixedly connected to another connecting plate 12, a second filter box 9 is fixedly connected to the lower surface of the another connecting plate 12, the second filter box 9 is fixed, the first filter box 8 and the second filter box 9 have the same structure and are connected through a third connecting pipe 23, which is convenient for filtering inert gas. A rotating column 14 is rotatably connected to both the first filter box 8 and the second filter box 9, and a sealing door 13 is fixedly connected to the side surface of the rotating column 14, which is convenient for sealing. A flow guiding plate 20 is fixedly connected to both the first filter box 8 and the second filter box 9 to guide the gas flow. A plurality of filter meshes 19 are arranged on both the upper and lower surfaces of the flow guiding plate 20 to filter the inert gas. Both ends of the filter mesh 19 are fixedly connected to a second fixing plate 25, and the second fixing plate 25 is slidably connected to the first filter box 8 and the second filter box 9, which is convenient for pulling out the filter mesh 19. A first fixing plate 21 is fixedly connected to the side surface of the second fixing plate 25, and a pulling block 22 is fixedly connected to the side surface of the first fixing plate 21. The pulling block 22 is located between the first filter box 8, the second filter box 9 and the sealing door 13, which is convenient for pulling out the filter mesh 19 for cleaning or replacement. An anti-permeation plate 26 is fixedly connected to the side surface of the second fixing plate 25, and the second fixing plate 25 is located between the anti-permeation plate 26 and the first filter box 8 and the second filter box 9 to prevent gas from flowing without passing through the filter mesh 19. The first filter box 8 and the vacuum chamber body 1 are connected through a second connecting pipe 16, and an exhaust valve two 15 and an exhaust valve four 24 are respectively arranged on the second connecting pipe 16 and the third connecting pipe 23, which is convenient for controlling the gas flow. A first connecting pipe 10 is fixedly connected to the lower surface of the second filter box 9, and an inert gas control and conveying module 11 is fixedly connected to one end of the first connecting pipe 10 away from the second filter box 9, which is convenient for the conveying and recycling of inert gas.

[0024] A recovery pipe 4 is fixedly connected to the side surface of the vacuum chamber body 1. The recovery pipe 4 is connected to the vacuum chamber body 1 and is in communication with it. One end of the recovery pipe 4 away from the vacuum chamber body 1 is connected to the second connecting pipe 16, and the connection point is below the second connecting pipe 16. An exhaust valve one 5 and an exhaust valve three 18 are arranged on the recovery pipe 4, which is convenient for exhausting. A communicating pipe 6 is fixedly connected to the lower surface of the vacuum chamber body 1, and a vacuum pump 7 is fixedly connected to one end of the communicating pipe 6 away from the vacuum chamber body 1, which is convenient for evacuating. A sleeve column 17 is fixedly connected to the inside of the vacuum chamber body 1, the second connecting pipe 16 is located inside the sleeve column 17, and one end of the second connecting pipe 16 away from the first filter box 8 is connected to an electrostatic chuck group 27. The electrostatic chuck group 27 is arranged inside the vacuum chamber body 1, and a wafer is placed on the electrostatic chuck group 27, which is convenient for processing. A rotating shaft 3 is rotatably connected to the vacuum chamber body 1, and a sealing cover plate 2 is fixedly connected to the side surface of the rotating shaft 3, which is convenient for sealing. At the same time, it is convenient for the sealing cover plate 2 to rotate, which is convenient for opening and closing and placing items.

[0025] Working principle: During use, the inert gas is recovered under the action of the inert gas control and delivery module 11. When processing in the vacuum chamber body 1 or when the particulate matter in the cavity moves along with the recovery of the inert gas and enters the first filter box 8. Under the action of the flow guide plate 20, the flow of the gas is guided and filtered under the action of the filter screen. At the same time, under the action of the second exhaust valve 15 and the fourth exhaust valve 24, the flow of the gas is controlled so that the particulate matter is filtered. When delivering the inert gas, the gas enters the second filter box 9 for filtration and then enters the vacuum chamber body 1 through the first filter box 8, which can avoid the influence of particulate matter on wafer processing.

[0026] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those of ordinary skill in the relevant art, various changes can be made without departing from the spirit of the present invention.

Claims

1. An electrostatic chuck rapid exhaust structure for a semiconductor process vacuum chamber, characterized in that, Including: A vacuum chamber body (1), a connecting plate (12) is fixedly connected to the lower surface of the vacuum chamber body (1), a first filter box (8) is fixedly connected to the lower surface of the connecting plate (12), another connecting plate (12) is fixedly connected to the lower surface of the first filter box (8), a second filter box (9) is fixedly connected to the lower surface of the other connecting plate (12). The first filter box (8) and the second filter box (9) have the same structure and are connected and communicated through a third connecting pipe (23). A flow guiding plate (20) is fixedly connected inside both the first filter box (8) and the second filter box (9). A plurality of filter meshes (19) are arranged on both the upper and lower surfaces of the flow guiding plate (20). Both ends of the filter mesh (19) are fixedly connected to a second fixing plate (25). The second fixing plate (25) is slidably connected to the first filter box (8) and the second filter box (9). The first filter box (8) is connected and communicated with the vacuum chamber body (1) through a second connecting pipe (16). An exhaust valve two (15) and an exhaust valve four (24) are respectively arranged on the second connecting pipe (16) and the third connecting pipe (23). A first connecting pipe (10) is fixedly connected to the lower surface of the second filter box (9). An inert gas control and conveying module (11) is fixedly connected to one end of the first connecting pipe (10) far away from the second filter box (9).

2. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, wherein A recovery pipe (4) is fixedly connected to the side surface of the vacuum chamber body (1). The recovery pipe (4) is connected and communicated with the vacuum chamber body (1). One end of the recovery pipe (4) far away from the vacuum chamber body (1) is connected and communicated with the second connecting pipe (16), and the connection part is located below the second connecting pipe (16). An exhaust valve one (5) and an exhaust valve three (18) are arranged on the recovery pipe (4).

3. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, characterized in that, A communicating pipe (6) is fixedly connected to the lower surface of the vacuum chamber body (1). A vacuum pump (7) is fixedly connected to one end of the communicating pipe (6) far away from the vacuum chamber body (1).

4. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, wherein, A rotating column (14) is rotatably connected to both the first filter box (8) and the second filter box (9). A sealing door (13) is fixedly connected to the side surface of the rotating column (14).

5. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, wherein A first fixing plate (21) is fixedly connected to the side surface of the second fixing plate (25). A pulling block (22) is fixedly connected to the side surface of the first fixing plate (21). The pulling block (22) is located between the first filter box (8), the second filter box (9) and the sealing door (13).

6. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, characterized in that An anti-permeation plate (26) is fixedly connected to the side surface of the second fixing plate (25). The second fixing plate (25) is located between the anti-permeation plate (26) and the first filter box (8) and the second filter box (9).

7. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, characterized in that, A sleeve column (17) is fixedly connected inside the vacuum chamber body (1). The second connecting pipe (16) is located inside the sleeve column (17). One end of the second connecting pipe (16) far away from the first filter box (8) is connected to an electrostatic chuck group (27). The electrostatic chuck group (27) is arranged inside the vacuum chamber body (1). A wafer is placed on the electrostatic chuck group (27).

8. The electrostatic chuck rapid exhaust structure of a semiconductor manufacturing vacuum chamber according to claim 1, wherein, A rotating shaft (3) is rotatably connected to the vacuum chamber body (1). A sealing cover plate (2) is fixedly connected to the side surface of the rotating shaft (3).

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