LD array optical fiber array wavelength locking laser of multi-wavelength etalon
Through a multi-wavelength etalon and optical system with step-shaped SiO2 film plated on an ultra-thin parallel flat sheet, the problems of output spectrum width and wavelength drift of semiconductor lasers are solved, and the stable output of the multi-channel ITU corresponding wavelength mode-locked narrow linewidth laser is realized, which is suitable for quasi-continuous light sources in the test system.
Patent Information
- Application Number
- CN202422573054.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-24
- Publication Date
- 2025-08-12
- Estimated Expiration
- 2034-10-24
AI Technical Summary
The output spectrum of existing high-power semiconductor lasers is wide and the wavelength is prone to drift, resulting in low laser efficiency, serious energy loss, and may even burn the laser.
A multi-wavelength etalon is used to use an LD array optical fiber array wavelength locking laser. By plating a step-shaped SiO2 film on an ultra-thin parallel flat sheet, spectral beam combining is achieved by combining an optical system and a grating to form a wavelength-locked semiconductor laser output array.
The composite output of the multi-channel ITU corresponding wavelength mode-locked narrow linewidth laser is realized. As the quasi-continuous light source of the test system, the output power of each wavelength is basically no different, which improves the stability and efficiency of the laser.
Smart Images
Figure CN223218633U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of lasers, in particular to an LD array optical fiber array wavelength-locked laser of a multi-wavelength etalon. Background Art
[0002] Common high-power semiconductor laser pump sources use two parallel mirrors formed by the cleavage planes of a semiconductor crystal as reflectors, forming a resonant cavity that oscillates and feeds back light, generating radiation amplification and laser output. Because semiconductor lasers have a wide gain curve, a wide luminous region, and support multiple modes, each with a different frequency, the output spectrum of a semiconductor laser is wide. Furthermore, the output spectrum of a semiconductor laser can vary with slight changes in temperature or drive current, causing the output center wavelength to drift and the spectral width to change. Pumping solid-state lasers and gas lasers with narrow absorption peaks results in low efficiency and severe energy loss. Furthermore, unabsorbed energy will be reflected multiple times within the laser, causing the laser temperature to rise and even burning out. Summary of the Invention
[0003] The purpose of the utility model is to provide a multi-wavelength etalon LD array fiber array wavelength-locked laser.
[0004] The technical solution adopted in this utility model is:
[0005] A multi-wavelength etalon LD array fiber array wavelength-locked laser comprises a wavelength-locked semiconductor laser output array consisting of a sequentially arranged LD array microlens collimating array lens, a narrow-width etalon, and an output reflector, and an optical system and a grating arranged after the semiconductor laser output array. The optical system realizes the deflection of light so that the optical fiber meets the diffraction angle of the grating, and the grating realizes the beam combination of the LD array. The LD array microlens collimating array lens comprises an LD array and a cylindrical microlens group arranged on the light-emitting side of the LD array. The cylindrical microlens group comprises an optical support frame and a plurality of independently arranged cylindrical microlenses at intervals on the optical support frame, each cylindrical microlens corresponding to one output light of the LD array. The narrow-width etalon has a plurality of steps, and each step of the narrow-width etalon corresponds to the collimated light of one LD chip of the LD array microlens collimating array lens.
[0006] Furthermore, the narrow-width etalon includes an ultra-thin parallel plate, on which step-shaped SiO2 film steps are coated through a mask; both sides of the ultra-thin parallel plate are coated with high-reflection films required for the etalon to form a group of adjacent narrow-width etalons with different transmission center wavelengths.
[0007] Furthermore, the cylindrical microlens includes a light input lens and a light output lens along the light path direction, and the light input lens and the light output lens of the same cylindrical microlens are separately cured using UV glue.
[0008] Specifically, the upper and lower sides of the cylindrical microlenses should be extended to several millimeters to facilitate adjustment and separate curing of UV glue on the auxiliary frame.
[0009] Furthermore, both side edges of the light input lens and the light output lens are extended to form mounting ears, and the mounting ears of the light input lens and the mounting ears of the light output lens are fixed by UV glue.
[0010] Furthermore, the ultra-thin parallel plate is a fused-stone ultra-thin parallel plate.
[0011] Furthermore, the thickness of the SiO2 film step varies from several nanometers to tens of nanometers and hundreds of nanometers.
[0012] Furthermore, the optical system uses a triangular prism or a reflector to deflect the output laser of the semiconductor laser output array at a specified angle in space to meet the distribution of the grating diffraction angle, thereby achieving spectral beam combining through the same grating.
[0013] Furthermore, between adjacent Bars of the semiconductor laser output array, the last step etalon of the previous step and the first step etalon of the next step form a quasi-continuous step series.
[0014] The present invention adopts the above technical solution, and a mask is used to coat a thin parallel plate of fused-silicon with SiO2 film steps of several nanometers, tens of nanometers, or hundreds of nanometers. The two sides of the plate are coated with the high-reflection film required by the etalon, forming a group of adjacent narrow-width etalons with different central transmission wavelengths. Such etalons are set on the light-emitting surface of the LD array microlens collimating array lens. Each etalon step corresponds to the collimated light of an LD chip, and cooperates with the output reflector to form a group of wavelength-locked semiconductor laser output arrays with equal wavelength differences. Finally, the LD array is combined through an optical system and a grating. The first step of the next step etalon between adjacent bars of the LD array of the present invention and the last step of the previous step can be a quasi-continuous step series, which is arranged in an orderly manner in space through two rhombus prisms or parallel reflectors, so that spectral beam combining is achieved through the same grating. The present invention realizes the combined output of multiple ITU-corresponding wavelength-locked narrow-linewidth lasers, which can be used as a light source for a test system, such as a quasi-continuous light source, with basically no difference in output power at each wavelength. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0016] Figure 1 This is a schematic diagram of the top view of the structure of a multi-wavelength etalon LD array fiber array wavelength-locked laser of the utility model;
[0017] Figure 2A schematic diagram of the side view of a multi-wavelength etalon LD array fiber array wavelength-locked laser. Implementation Method
[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.
[0019] like Figure 1 As shown in or 2, the utility model discloses an LD array fiber array wavelength-locked laser with a multi-wavelength etalon, which includes a wavelength-locked semiconductor laser output array composed of an LD array microlens collimating array lens, a narrow-width etalon 3 and an output reflector 4 arranged in sequence, and an optical system 11 and a grating 12 arranged after the semiconductor laser output array. The optical system 11 realizes the turning of light so that the optical fiber meets the diffraction angle of the grating 12, and the grating 12 realizes the beam combining of the LD array; the LD array microlens collimating array lens 1 includes an LD array 1 and a cylindrical microlens group 2 arranged on the light-emitting side of the LD array 1, the cylindrical microlens group 2 includes an optical support frame 5 and a plurality of independent cylindrical microlenses 6 arranged at intervals on the optical support frame 5, each cylindrical microlens 6 corresponding to an output light of the LD array 1; the narrow-width etalon 3 has a plurality of steps, and each step of the narrow-width etalon 3 corresponds to a collimated light of an LD chip of the LD array microlens collimating array lens 1.
[0020] Furthermore, the narrow-width etalon 3 includes an ultra-thin parallel plate 31, on which a step-shaped SiO2 film step 32 is coated through a mask; both sides of the ultra-thin parallel plate 31 are coated with a high-reflection film required for the etalon to form a group of adjacent narrow-width etalons 3 with different transmission center wavelengths.
[0021] Furthermore, the cylindrical microlens 6 includes a light input lens 7 and a light output lens 8 along the light path direction, and the light input lens 7 and the light output lens 8 of the same cylindrical microlens 6 are separately cured using UV glue 9 .
[0022] Specifically, the upper and lower sides of the cylindrical microlens 6 are lengthened to several millimeters to facilitate adjustment and separate curing of the UV glue 9 on the auxiliary frame.
[0023] Furthermore, both side edges of the light input lens 7 and the light output lens 8 extend to form mounting ears 10 , and the mounting ears 10 of the light input lens 7 and the mounting ears 10 of the light output lens 8 are fixed by UV glue 9 .
[0024] Furthermore, the ultra-thin parallel plate 31 is a fused-stone ultra-thin parallel plate 31 .
[0025] Furthermore, the thickness of the SiO 2 film step 32 varies from several nanometers to tens of nanometers and hundreds of nanometers.
[0026] Furthermore, the optical system 11 uses a triangular prism or a reflective mirror to deflect the output laser light of the semiconductor laser output array at a specified angle in space to satisfy the distribution of the grating diffraction angle, thereby achieving spectral beam combining through the same grating 12 .
[0027] Furthermore, between adjacent Bars of the semiconductor laser output array, the last step etalon of the previous step and the first step etalon of the next step form a quasi-continuous step series.
[0028] The present invention adopts the above technical solution. SiO2 film steps 32 with diameters of several nanometers, tens of nanometers, or hundreds of nanometers are deposited onto a thin, parallel plate 31 made of fused-silicon via a mask. Both sides of the plate are coated with the high-reflectivity coating required for the etalon, forming a set of adjacent narrow-width etalons 3 with different central transmission wavelengths. These etalons are placed on the light-exiting surface of the LD array microlens collimating array lens 1. Each etalon step corresponds to the collimated light from an LD chip. Together with the output reflector 4, a wavelength-locked semiconductor laser output array with similar wavelengths having equal differences is formed. Finally, the LD array is beam-combined via the optical system 11 and grating 12. In the present invention, the first step of the next step etalon between adjacent bars of the LD array and the last step of the previous step can be a quasi-continuous series of steps, which are spatially ordered using two rhombic prisms or parallel reflectors, thereby achieving spectral beam combining through the same grating 12. The present invention achieves the combined output of multiple ITU-corresponding wavelength-locked narrow-linewidth lasers, and can be used as a light source for a test system, such as a quasi-continuous light source, with essentially no difference in output power at each wavelength.
[0029] Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. In the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the detailed description of the embodiments of the present application is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
Claims
1. A multi-wavelength etalon LD array fiber array wavelength-locked laser, characterized by: The invention comprises a wavelength-locked semiconductor laser output array composed of an LD array microlens collimating array lens, a narrow-width etalon and an output reflector arranged in sequence, and an optical system and a grating arranged after the semiconductor laser output array. The optical system realizes the deflection of light so that the optical fiber meets the diffraction angle of the grating, and the grating realizes the beam combination of the LD array; the LD array microlens collimating array lens comprises an LD array and a cylindrical microlens group arranged on the light-emitting side of the LD array, the cylindrical microlens group comprises an optical support frame and a plurality of independent cylindrical microlenses arranged at intervals on the optical support frame, each cylindrical microlens corresponding to an output light of the LD array; the narrow-width etalon has a plurality of steps, and each step of the narrow-width etalon corresponds to the collimated light of an LD chip of the LD array microlens collimating array lens.
2. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: The narrow-width etalon includes an ultra-thin parallel plate on which a step-shaped SiO2 film step is coated through a mask; both sides of the ultra-thin parallel plate are coated with a high-reflection film required for the etalon to form a group of adjacent narrow-width etalons with different transmission center wavelengths.
3. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: The cylindrical microlens includes a light input lens and a light output lens along the light path direction. The light input lens and the light output lens of the same cylindrical microlens are separately cured using UV glue.
4. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: Both sides of the light input lens and the light output lens are extended to form mounting ears respectively, and the mounting ears of the light input lens and the mounting ears of the light output lens are fixed by UV glue.
5. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: Ultra-thin parallel plates are fused-stone ultra-thin parallel plates.
6. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: The thickness of the SO2 film steps ranges from a few nanometers to tens of nanometers and hundreds of nanometers.
7. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: The optical system uses a triangular prism or a reflector to make the output laser of the semiconductor laser output array deflect at a specified angle in space to meet the distribution of the grating diffraction angle, thereby achieving spectral beam combining through the same grating.
8. The multi-wavelength etalon LD array fiber array wavelength-locked laser according to claim 1, characterized in that: Between adjacent Bars of the semiconductor laser output array, the last step of the previous step etalon and the first step of the next step etalon form a quasi-continuous step series.