Display chip structure and display device

Abstract

The utility model discloses a display chip structure and a display device, and the display chip structure comprises a light-emitting unit layer which is located at one side of a driving substrate; the light-emitting unit layer comprises a plurality of light-emitting units which are arranged at intervals; the first insulating layer is positioned on one side, far away from the driving substrate, of the light-emitting unit layer; the first insulating layer comprises a first groove, and the first groove is located between the adjacent light emitting units; the first groove extends into the first insulating layer from the plate surface, far away from the driving substrate, of the first insulating layer; the isolation structure is positioned in the first groove; the isolation structure comprises a reflection cup structure and a black glue structure, and the black glue structure is located on the side, away from the first insulation layer, of the reflection cup structure. The utility model can prevent light crosstalk and improve the light utilization rate.

Description

Technical Field

[0001] The utility model relates to the field of display technology, and in particular to a display chip structure and a display device. Background Art

[0002] Modern society has entered the information age and is developing towards intelligence. Display is a key link in achieving information exchange and intelligence. Among the many display technologies currently available, micro-light-emitting diode (Micro LED) display technology is considered to be a disruptive next-generation display technology and has received widespread attention. The Micro LED display chip structure is a two-dimensional array display device that integrates high-density pixel light-emitting units on a single chip. Micro LED display chips are widely used in augmented reality (AR), near-eye display (NED), wearable display and other fields due to their advantages such as small size, long life, fast response speed and low power consumption.

[0003] Micro LED generally refers to the technology of using LED light-emitting units with a size of 1 to 200μm to form a display array. The Micro LED display chip structure generally includes multiple light-emitting units, but the light emitted by each light-emitting unit is relatively scattered and the light utilization rate is low; the crosstalk and light distribution between the light-emitting units have a significant impact on the display quality and the efficiency of coupling into the optical waveguide. Utility Model Content

[0004] The utility model provides a display chip structure and a display device, which can prevent light crosstalk and improve light utilization.

[0005] According to one aspect of the present invention, a display chip structure is provided, comprising:

[0006] A light-emitting unit layer, the light-emitting unit layer is located on one side of the driving substrate; the light-emitting unit layer includes a plurality of light-emitting units arranged at intervals;

[0007] a first insulating layer, the first insulating layer being located on a side of the light-emitting unit layer away from the driving substrate; the first insulating layer comprising a first groove, the first groove being located between adjacent light-emitting units; the first groove extending from a surface of the first insulating layer away from the driving substrate to an interior of the first insulating layer;

[0008] The isolation structure is located in the first trench; the isolation structure includes a reflective cup structure and a black glue structure, and the black glue structure is located on a side of the reflective cup structure away from the first insulating layer.

[0009] Optionally, the first insulating layer further comprises a second trench, a vertical projection of the second trench on the driving substrate covers a vertical projection of the light emitting unit on the driving substrate; the second trench extends from a surface of the first insulating layer away from the driving substrate to an interior of the first insulating layer.

[0010] The display chip structure further comprises: a light conversion structure, the light conversion structure is located in the second trench, and each light emitting unit corresponds to one light conversion structure.

[0011] Optionally, the light conversion structure comprises a fluorescent powder conversion structure or a quantum dot conversion structure.

[0012] Optionally, the light emitting unit is a blue light emitting unit; and the light conversion structure is configured to convert blue light into white light.

[0013] Optionally, the display chip structure further comprises:

[0014] a plurality of microlenses, the microlenses are located on a side of the first insulating layer away from the driving substrate;

[0015] a vertical projection of the microlenses on the driving substrate covers a vertical projection of the light conversion structure on the driving substrate; and each light emitting unit corresponds to at least one microlens.

[0016] Optionally, the thickness of the reflective cup structure ranges from 100 nm to 1 μm.

[0017] Optionally, each light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in a stack, and the second semiconductor layer is located on a side of the first semiconductor layer away from the driving substrate.

[0018] Optionally, the display chip structure further comprises:

[0019] a first conductive layer, the first conductive layer is located on a side of the first semiconductor layer away from the second semiconductor layer; the first conductive layer comprises at least one first conductive block, and the light emitting unit covers part of the first conductive block;

[0020] a second conductive layer, the second conductive layer is located on a side of the second semiconductor layer away from the driving substrate, and the second conductive layer comprises at least one second conductive block, and the second conductive block covers the second semiconductor layer;

[0021] a second insulating layer, the second insulating layer is located on a side of the second conductive layer away from the driving substrate, and the second insulating layer is configured to isolate adjacent light emitting units; the second insulating layer comprises a through hole, and the through hole exposes part of the second conductive layer;

[0022] a common conductive layer, the common conductive layer is located on a side of the second insulating layer away from the driving substrate, the common conductive layer covers the second insulating layer, and the common conductive layer is in contact with the second conductive layer through the through hole.

[0023] Optionally, the display chip structure further comprises:

[0024] a plurality of bonding layers, the bonding layers being located on a side of the first conductive layer adjacent to the driving substrate, each bonding layer corresponding to one light emitting unit, the first conductive layer covering the bonding layers;

[0025] a plurality of current spreading layers, the current spreading layers being located on a side of the common conductive layer away from the driving substrate, the current spreading layers covering part of the common conductive layer, a vertical projection of the current spreading layers on the driving substrate covering a vertical projection of the isolation structure on the driving substrate.

[0026] According to another aspect of the present application, a display device is provided, which comprises the display chip structure according to any of the embodiments of the present application.

[0027] The display chip structure provided by the technical scheme of the present application comprises: a light emitting unit layer, the light emitting unit layer being located on a side of a driving substrate; the light emitting unit layer comprising a plurality of light emitting units arranged at intervals; a first insulating layer, the first insulating layer being located on a side of the light emitting unit layer away from the driving substrate; the first insulating layer comprising a first groove, the first groove being located between adjacent light emitting units; the first groove extending from a surface of the first insulating layer away from the driving substrate to the inside of the first insulating layer; an isolation structure, the isolation structure being located in the first groove; the isolation structure comprising a reflective cup structure and a black glue structure, the black glue structure being located on a side of the reflective cup structure away from the first insulating layer. According to the present application, the reflective cup structure is arranged, and light emitted from the inclined side wall of the light emitting unit can be reflected, the divergence of light emitted from the mesa of the light emitting unit is reduced, the efficiency of collecting and converging the light is improved, the optical power and the light utilization rate are improved, and a display with higher brightness and higher power than the traditional solution is realized. However, since part of the light can pass through the reflective cup structure and cause optical crosstalk, the black glue structure is arranged to block the light emitted from the adjacent light emitting unit, the optical crosstalk between the adjacent light emitting units is effectively suppressed, optical isolation is realized, and the color contrast and the definition are enhanced.

[0028] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0029] In order to more clearly illustrate the technical scheme in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0030] Figure 1It is a structure schematic diagram of a display chip provided by the embodiment of the present application.

[0031] Figure 2 It is another structure schematic diagram of a display chip provided by the embodiment of the present application.

[0032] Figure 3 It is a structure schematic diagram of a light emitting unit provided by the embodiment of the present application.

[0033] Figures 4-15 It is a middle structure schematic diagram of a display chip provided by the embodiment of the present application. DETAILED DESCRIPTION

[0034] In order to make the person in the art better understand the present application scheme, the technical scheme in the embodiment of the present application will be described clearly and completely in the following with the drawings in the embodiment of the present application, obviously, the described embodiment is only a part of the embodiment of the present application, not all the embodiments. Based on the embodiment in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the protection scope of the present application.

[0035] It should be noted that the terms "first", "second" and the like in the present application are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0036] The embodiment of the present application provides a display chip structure, Figure 1 It is a structure schematic diagram of a display chip provided by the embodiment of the present application, referring to Figure 1 The display chip structure comprises:

[0037] The light emitting unit layer is located on one side of the driving substrate 10; the light emitting unit layer includes a plurality of light emitting units 20 arranged at intervals; the first insulating layer 30 is located on the side of the light emitting unit layer away from the driving substrate 10; the first insulating layer 30 includes a first groove 31 located between adjacent light emitting units 20; the first groove 31 extends from the surface of the first insulating layer 30 away from the driving substrate 10 to the inside of the first insulating layer 30; the isolation structure 40 is located in the first groove 31; the isolation structure 40 includes a reflective cup structure 41 and a black glue structure 42, and the black glue structure 42 is located on the side of the reflective cup structure 41 away from the first insulating layer 30.

[0038] The driving substrate 10 is a substrate with an integrated circuit, and the driving substrate can use a general Micro LED logic control chip; the driving substrate 10 includes a plurality of driving units, each driving unit can be provided with a contact point, and the contact points of the driving units are arranged one by one corresponding to the light emitting units 20, and the light emitting units 20 can be arranged directly above the contact points, and each light emitting unit 20 can be independently controlled. The arrangement of the light emitting units 20 can be regular arrangement, for example, array arrangement; each light emitting unit 20 includes a first semiconductor layer, a light emitting layer and a second semiconductor layer arranged in layers, and the materials of the first semiconductor layer, the light emitting layer and the second semiconductor layer are all commonly used Ⅲ-Ⅴ or Ⅱ-Ⅳ compound materials in the semiconductor industry.

[0039] The first insulating layer 30 is used to protect all the light emitting units 20, and the first insulating layer 30 is a transparent insulating passivation layer, and the material of the first insulating layer 30 includes transparent inorganic or plastic (organic) material; in some embodiments, the inorganic material includes silicon oxide, titanium oxide, silicon nitride, silicon carbide, aluminum oxide, phosphosilicate glass (PSG), or any combination of the above. In some embodiments, the plastic material includes polymers such as SU-8, benzocyclobutene (BCB), or transparent plastic (resin) including spin-on glass (SOG), or any combination of the above.

[0040] The isolation structure 40 includes a reflective cup structure 41 and a black glue structure 42, the material of the reflective cup structure 41 can include a metal material, for example, any one of titanium, aluminum and platinum; the material of the black glue structure 42 includes an organic material; the reflective cup structure 41 can reflect the light emitted from the inclined side wall of the light emitting unit 20, the light emitting angle of the light emitting unit 20 is about ±55°, the divergence of the light emitted from the mesa of the light emitting unit can be reduced, the efficiency of collecting and converging the light is higher, the light utilization rate is improved, the display with higher brightness and higher power than the traditional solution is realized; but part of the light will pass through the reflective cup structure 41 to cause light crosstalk, therefore, the black glue structure 42 is arranged to block the light emitted by the adjacent light emitting unit 20, the light crosstalk between the adjacent light emitting units 20 can be effectively suppressed, and the color contrast and clarity are enhanced.

[0041] The display chip structure provided by the technical scheme of the embodiment of the utility model includes: a light emitting unit layer, the light emitting unit layer is located on one side of the driving substrate 10; the light emitting unit layer includes a plurality of light emitting units 20 arranged at intervals; a first insulating layer 30, the first insulating layer 30 is located on the side of the light emitting unit layer away from the driving substrate 10; the first insulating layer 30 includes a first groove 31, and the first groove 31 is located between adjacent light emitting units 20; the first groove 31 extends from the surface of the first insulating layer 30 away from the driving substrate 10 to the inside of the first insulating layer 30; an isolation structure 40, the isolation structure 40 is located in the first groove 31; the isolation structure 40 includes a reflective cup structure 41 and a black glue structure 42, and the black glue structure 42 is located on the side of the reflective cup structure 41 away from the first insulating layer 30. The utility model embodiment can reflect the light emitted from the inclined side wall of the light emitting unit 20 by arranging the reflective cup structure 41, reduce the divergence of the light emitted from the mesa of the light emitting unit, realize higher efficiency of collecting and converging the light, improve the light power and light utilization rate, realize the display with higher brightness and higher power than the traditional solution; but part of the light will pass through the reflective cup structure 41 to cause light crosstalk, therefore, the black glue structure 42 is arranged to block the light emitted by the adjacent light emitting unit 20, the light crosstalk between the adjacent light emitting units 20 can be effectively suppressed, and the color contrast and clarity are enhanced.

[0042] Optionally, referring to Figure 1 The first insulating layer 30 further includes a second groove 32, and the vertical projection of the second groove 32 on the driving substrate 10 covers the vertical projection of the light emitting unit 20 on the driving substrate 10; the second groove 32 extends from the surface of the first insulating layer 30 away from the driving substrate 10 to the inside of the first insulating layer 30; the display chip structure further includes: a light conversion structure 50, and the light conversion structure 50 is located in the second groove 32, and one light conversion structure 50 corresponds to each light emitting unit 20.

[0043] The light conversion structure 50 can be used to convert the color of the light emitted by the light emitting unit 20 into a required light emitting color; for example, if the light emitting color of the light emitting unit 20 is blue and the required light emitting color is white, the light conversion structure 50 can be configured as a blue-to-white light conversion structure; if the light emitting color of the light emitting unit 20 is blue and the required light emitting color is red, the light conversion structure 50 can be configured as a blue-to-red light conversion structure. The light conversion structure 50 includes a fluorescent powder conversion structure or a quantum dot conversion structure.

[0044] Optionally, Figure 2 is a structure diagram of another display chip provided by the embodiment of the present application, referring to Figure 1 and Figure 2 The light conversion structure 50 includes a fluorescent powder conversion structure or a quantum dot conversion structure.

[0045] Among them, Figure 1 The quantum dot material in the quantum dot conversion structure has many excellent photoelectric properties such as high color purity, adjustable light emitting color and high fluorescence quantum yield, and can be used to improve the display color gamut of the liquid crystal panel or realize full-color display in combination with a blue light emitting unit. Figure 2 The fluorescent powder material in the fluorescent powder conversion structure can realize light conversion and can convert blue light into visible light of other wavelengths.

[0046] Optionally, referring to Figure 1 and Figure 2 The light emitting unit 20 is a blue light emitting unit; and the light conversion structure 50 is used to convert blue light into white light.

[0047] Among them, the light emitting unit 20 is a blue light emitting unit; and the light conversion structure 50 is used to convert blue light into white light through fluorescent powder or mixed quantum dot technology, converts the blue light emitted by the light emitting unit 20 into the white light source most used by the public at present, so as to realize white light isolation technology.

[0048] Optionally, the display chip structure further includes: a plurality of microlenses 60, the microlenses 60 are located on the side of the first insulating layer 30 away from the driving substrate 10; the vertical projection of the microlenses 60 on the driving substrate 10 covers the vertical projection of the light conversion structure 50 on the driving substrate 10; and each light emitting unit 20 corresponds to at least one microlens 60.

[0049] The first insulating layer 30 is used as a passivation layer and a planarization layer of the light emitting unit 20, and the surface of the first insulating layer 30 away from the driving substrate 10 is a planarized surface. The material of the microlens 60 is an organic material, and the microlens 60 composed of the organic material is formed by patterning with a mask, photolithography, and then performing a thermal reflow process at high temperature and etching. The shape of the microlens 60 can be hemispherical or circular truncated conical. Each light emitting unit 20 corresponds to at least one microlens 60, and the number of microlenses 60 on a single light emitting unit 20 is one or more. The surface of the microlens 60 away from the driving substrate 10 is a curved surface, which can further converge light. The microlens 90 can reduce scattering, internal reflection, absorption, etc., and effectively improve the light condensation effect of the display chip structure.

[0050] Optionally, referring to Figure 1 and Figure 2 The thickness of the reflective cup structure 41 ranges from 100nm to 1um.

[0051] The thickness of the reflective cup structure 41 ranges from 100nm to 1um, and preferably, the thickness of the reflective cup structure 41 ranges from 200nm. The light emitted from the inclined side wall of the light emitting unit 20 can be reflected, the divergence of the light emitted from the mesa of the light emitting unit 20 can be reduced, the efficiency of collecting and converging the light can be improved, the light utilization rate can be improved, and the display with higher brightness and higher power than the traditional solution can be realized.

[0052] Optionally, Figure 3 is a structural schematic diagram of a light emitting unit provided by an embodiment of the present application, referring to Figure 3 Each light emitting unit 20 comprises a first semiconductor layer 21, a light emitting layer 22 and a second semiconductor layer 23 arranged in layers, and the second semiconductor layer 23 is located on the side of the first semiconductor layer 21 away from the driving substrate 10.

[0053] The light emitting unit 20 can be a Micro LED light emitting unit, the first semiconductor layer 21 can be an N-type semiconductor layer or a P-type semiconductor layer, if the first semiconductor layer 21 is an N-type semiconductor layer, the second semiconductor layer 23 is a P-type semiconductor layer, if the first semiconductor layer 21 is a P-type semiconductor layer, the second semiconductor layer 23 is an N-type semiconductor layer. The light emitting layer 22 can be any one of a blue light emitting layer, a green light emitting layer or a red light emitting layer, and can be set according to requirements.

[0054] Optionally, the display chip structure further comprises a first conductive layer 70, and the first conductive layer 70 is located on the side of the first semiconductor layer 21 away from the second semiconductor layer 23. The first conductive layer 70 comprises at least one first conductive block 71, and the light emitting unit 20 covers part of the first conductive block 71.

[0055] A second conductive layer 80 is located on the side of the second semiconductor layer 23 away from the driving substrate 10, and includes at least one second conductive block 81 covering the second semiconductor layer 23.

[0056] A second insulating layer 90 is located on the side of the second conductive layer 80 away from the driving substrate 10, and is used to isolate adjacent light emitting units 20; the second insulating layer 90 includes a through hole 91 exposing part of the second conductive layer 80.

[0057] A common conductive layer 100 is located on the side of the second insulating layer 90 away from the driving substrate 10, and covers the second insulating layer 90 and is in contact with the second conductive layer 80 through the through hole 91.

[0058] The first conductive layer 70 includes at least one first conductive block 71, and when the first conductive layer 70 includes one first conductive block 71, multiple light emitting units share one first conductive block 71; when the first conductive layer 70 includes multiple first conductive blocks 71, each first conductive block 71 can correspond to one light emitting unit 20; the second conductive layer 80 includes at least one second conductive block 81, and when the second conductive layer 80 includes one second conductive block 81, multiple light emitting units share one second conductive block 81; when the second conductive layer 80 includes multiple second conductive blocks 81, each second conductive block 81 can correspond to one light emitting unit 20; the first conductive layer 70, the second conductive layer 80 and the common conductive layer 100 are transparent conductive layers, for example, indium tin oxide (ITO); when the first conductive layer 70 includes multiple first conductive blocks 71 and each first conductive block 71 corresponds to one light emitting unit 20, the contact point in the driving substrate 10 can correspond to one first conductive block 71, and each light emitting unit 20 can be independently controlled. The light emitting unit 20 covers part of the first conductive block 71, so that there is a step structure between the light emitting unit 20 and the first conductive block 71, and the second insulating layer 90 covers the step structure, which can improve the reliability of the display chip structure.

[0059] The common conductive layer is used for connecting all the second conductive blocks 81, so that the second semiconductor layer 23 has the same electrical signal. The second insulating layer 90 is used for isolating adjacent light emitting units 20 and protecting the light emitting units 20. The second insulating layer 90 can cover the sidewall of the first conductive layer 70, the sidewall of the light emitting unit 20, the first conductive layer 70 not covered by the light emitting unit 20, the sidewall of the second conductive layer 80, and part of the surface of the second conductive layer 80 away from the driving substrate 10. The material of the second insulating layer 90 includes transparent inorganic or plastic (organic) material. In some embodiments, the inorganic material includes silicon oxide, titanium oxide, silicon nitride, silicon carbide, aluminum oxide, phosphosilicate glass (PSG), or any combination thereof. In some embodiments, the plastic material includes a polymer such as SU-8, benzocyclobutene (BCB), or a transparent plastic (resin) including spin-on glass (SOG), or any combination thereof.

[0060] Optionally, the display chip structure further includes: a plurality of bonding layers 101, the bonding layer 101 is located on the side of the first conductive layer 70 adjacent to the driving substrate 10; each bonding layer 101 corresponds to a light emitting unit 20; and the first conductive layer 70 covers the bonding layer 101.

[0061] A plurality of current expansion layers 102, the current expansion layer 102 is located on the side of the common conductive layer 100 away from the driving substrate 10, the current expansion layer 102 covers part of the common conductive layer 100, and the vertical projection of the current expansion layer 100 on the driving substrate 10 covers the vertical projection of the isolation structure 40 on the driving substrate 10.

[0062] The bonding layer 101 can be a metal bonding layer, which can include a first adhesion layer, a bonding metal, a barrier layer, a second adhesion layer, and an ohmic contact layer arranged in layers. The first adhesion layer can increase the adhesion to the driving substrate 10, and the second adhesion layer can increase the adhesion of the ohmic contact layer to the barrier layer. When the bonding metal is bonded to the driving substrate 10, the barrier layer can block the diffusion of metal ions to the ohmic contact layer, affecting the performance of the device. The metal bonding material can include Au-Au bonding, Cu-Cu bonding, Au-Sn bonding, Au-In bonding, and the like. One current expansion layer 102 is arranged between adjacent light emitting units 20. The current expansion layer 102 can be a metal strip, and the current expansion layer 102 can be used for current expansion and isolation and segmentation of the light emitting unit 20.

[0063] The preparation method of the display chip structure provided in the embodiment of the utility model on the basis of the above-mentioned scheme, Figures 4-15 The intermediate structure of the display chip provided in the embodiment of the utility model is shown in the figure, Figures 4-15 The preparation method includes:

[0064] S110, forming a driving substrate. The driving substrate includes a plurality of driving units, each driving unit is provided with a contact point, and the contact points of the driving units are arranged one by one corresponding to the light-emitting units, so that each light-emitting unit can be independently controlled.

[0065] S120, forming a first conductive layer.

[0066] S130, forming a light-emitting unit layer.

[0067] S140, forming a second conductive layer on the side of the light-emitting unit layer away from the driving substrate.

[0068] S150, bonding the first conductive layer and the driving substrate through a bonding layer; wherein the driving substrate and the first conductive layer can be bonded together through a bonding process, and then the final structure of the light-emitting unit layer, the first conductive layer and the second conductive layer can be formed by removing the excess material and the bonding metal material through micro-nano processing, mainly photolithography, etching and deposition; the light-emitting unit layer includes a plurality of light-emitting units arranged at intervals; each light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer arranged in layers; the second semiconductor layer is located on the side of the first semiconductor layer away from the driving substrate.

[0069] S160, forming a second insulating layer on the side of the second conductive layer away from the driving substrate through a deposition process; the second insulating layer is used to isolate adjacent light-emitting units; a through hole is formed by etching the second insulating layer, and the through hole exposes part of the second conductive layer.

[0070] S170, forming a common conductive layer on the side of the second insulating layer away from the driving substrate; the common conductive layer covers the second insulating layer and is in contact with the second conductive layer through the through hole. Finally, the structure in Figure 4 is formed.

[0071] S180, referring to Figure 5 , a plurality of current spreading layers 102 are formed on the side of the common conductive layer 100 away from the driving substrate 10; the current spreading layer 102 covers part of the common conductive layer 100 and is located between adjacent light-emitting units 20.

[0072] S190, referring to Figure 6 , a first insulating layer 30 is formed on the side of the current spreading layer 102 away from the driving substrate 10.

[0073] S200, referring to Figure 7 , a first trench 31 is formed by etching the first insulating layer 30.

[0074] S210, referring to Figure 8 , a reflective cup structure 41 is formed on the side of the first insulating layer 30 away from the driving substrate 10 through a deposition process.

[0075] S220, referring toFigure 9 The black glue structure 42 is formed on the side of the reflective cup structure 41 away from the driving substrate 10 by a deposition process.

[0076] S230, referring to Figure 10 The black glue structure 42 on the surface of the reflective cup structure 41 away from the driving substrate 10 is removed, and the black glue structure 42 inside the first groove 31 is retained.

[0077] S240, referring to Figure 11 The area of the vertical projection of the light emitting unit 20 on the reflective cup structure 41 is removed, and part of the first insulating layer 30 is exposed.

[0078] S250, referring to Figure 12 The part of the first insulating layer 30 exposed in S240 is etched to form a second groove.

[0079] S260, referring to Figure 13 The surface of the reflective cup structure 41 away from the driving substrate 10 is planarized so that the reflective cup structure 41 and the black glue structure 42 are only inside the first groove 31, thereby forming an isolation structure 40. The excess black glue material on the top of the light emitting unit 20 is removed by chemical mechanical polishing (CMP) polishing or etching; and the reflective cup material on the top of the light emitting unit 20 and the material of the first insulating layer 30 are removed by photolithography and etching.

[0080] Among them, the excess first insulating layer 30 in the light emitting unit 20 can be removed by micro-nano processing, mainly photolithography, etching, and deposition, and then the reflective cup structure 41 and the black glue structure 42 are deposited so that the reflective cup structure 41 and the black glue structure 42 are formed between the light emitting units 20.

[0081] S270, referring to Figure 14 And Figure 15 The light conversion structure 50 is formed in the second groove 32, Figure 14 The light conversion structure in the above is a quantum dot conversion structure, Figure 15 The light conversion structure in the above is a phosphor conversion structure.

[0082] Among them, the second groove 32 can be filled by phosphor technology or mixed quantum dot technology, and the light emitted by the light emitting unit 20 is converted into white light.

[0083] S280, referring to Figure 1 And Figure 2 A plurality of microlenses 60 are formed on the side of the light conversion structure away from the driving substrate.

[0084] The micro-lens 60 can be etched by mask patterning, photolithography, high-temperature thermal reflow process, etching, etc. to form a rectangular array of micro-lenses 60, and the number of micro-lenses 60 on a single light emitting unit 20 is one or more, and the shape is generally hemispherical or circular truncated cone. In some embodiments, the micro-lens 60 composed of inorganic or organic material is formed by mask patterning, photolithography, and then etching. In some embodiments, the micro-lens composed of organic material is formed by mask patterning, photolithography, and then high-temperature thermal reflow process, etching.

[0085] The display device provided by the embodiment of the present application and the display chip structure provided by any of the embodiments of the present application have the same beneficial effects.

[0086] The display device provided by the embodiment of the present application and the display chip structure provided by any of the embodiments of the present application have the same beneficial effects.

[0087] It should be understood that the various forms of the flow shown above can be used to reorder, add or delete steps. For example, the steps described in the present application can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solutions of the present application can be achieved, which is not limited herein.

[0088] The above detailed description does not constitute a limitation on the scope of protection of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A display chip structure, characterized in that: include: A light-emitting unit layer, the light-emitting unit layer being located on one side of the driving substrate; the light-emitting unit layer comprising a plurality of light-emitting units arranged at intervals; a first insulating layer, the first insulating layer being located on a side of the light-emitting unit layer away from the driving substrate; the first insulating layer comprising a first groove, the first groove being located between adjacent light-emitting units; the first groove extending from a surface of the first insulating layer away from the driving substrate to an interior of the first insulating layer; an isolation structure, wherein the isolation structure is located in the first trench; The isolation structure includes a reflective cup structure and a black glue structure, and the black glue structure is located on a side of the reflective cup structure away from the first insulating layer.

2. The display chip structure according to claim 1, wherein: The first insulating layer further includes a second groove, wherein a vertical projection of the second groove on the driving substrate covers a vertical projection of the light emitting unit on the driving substrate; The second groove extends from a surface of the first insulating layer away from the driving substrate to an interior of the first insulating layer; The display chip structure further includes a light conversion structure, which is located in the second groove, and each light-emitting unit corresponds to a light conversion structure.

3. The display chip structure according to claim 2, wherein: The light conversion structure includes a phosphor conversion structure or a quantum dot conversion structure.

4. The display chip structure according to claim 3, wherein: The light-emitting unit is a blue light-emitting unit; and the light conversion structure is used to convert blue light into white light.

5. The display chip structure according to claim 2, wherein: Also includes: a plurality of micro lenses, wherein the micro lenses are located on a side of the first insulating layer away from the driving substrate; The vertical projection of the microlens on the driving substrate covers the vertical projection of the light conversion structure on the driving substrate; Each of the light-emitting units corresponds to at least one microlens.

6. The display chip structure according to claim 1, wherein: The thickness of the reflective cup structure ranges from 100 nm to 1 μm.

7. The display chip structure according to claim 1, wherein: Each of the light-emitting units includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer that are stacked. The second semiconductor layer is located on a side of the first semiconductor layer away from the driving substrate.

8. The display chip structure according to claim 7, wherein: Also includes: a first conductive layer, the first conductive layer being located on a side of the first semiconductor layer away from the second semiconductor layer; the first conductive layer comprising at least one first conductive block, the light emitting unit covering a portion of the first conductive block; a second conductive layer, the second conductive layer being located on a side of the second semiconductor layer away from the driving substrate, the second conductive layer comprising at least one second conductive block, the second conductive block covering the second semiconductor layer; a second insulating layer, the second insulating layer being located on a side of the second conductive layer away from the drive substrate, the second insulating layer being used to isolate adjacent light-emitting units; the second insulating layer comprising a through hole, the through hole exposing a portion of the second conductive layer; A common conductive layer is located on a side of the second insulating layer away from the drive substrate, covers the second insulating layer, and contacts the second conductive layer through the through hole.

9. The display chip structure according to claim 8, wherein: Also includes: a plurality of bonding layers, each of the bonding layers being located on a side of the first conductive layer adjacent to the driving substrate; and each bonding layer corresponding to a light-emitting unit; The first conductive layer covers the bonding layer; A plurality of current spreading layers are provided, wherein the current spreading layers are located on a side of the common conductive layer away from the driving substrate, the current spreading layers partially cover the common conductive layer, and the vertical projection of the current spreading layers on the driving substrate covers the vertical projection of the isolation structure on the driving substrate.

10. A display device, characterized in that: The display chip structure comprises the display chip structure according to any one of claims 1 to 9.

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