Semiconductor manufacturing apparatus

Abstract

The utility model discloses semiconductor manufacturing equipment. The apparatus includes a wafer holder to hold a wafer, a nozzle disposed over the wafer and to provide a material to the wafer, and a nozzle control device to adjust a configuration of the nozzle to improve uniformity of the material disposed on the wafer.

Description

Technical Field

[0001] This disclosure pertains to semiconductor manufacturing equipment. Background Technology

[0002] In semiconductor manufacturing, certain manufacturing processes, such as deposition or cleaning processes, are performed by dispersing materials on semiconductor wafers. During these manufacturing processes, the uniformity of material dispersion on the semiconductor wafer may change, which can adversely affect wafer yield and IC performance. Utility Model Content

[0003] According to some embodiments disclosed herein, a semiconductor manufacturing apparatus includes: a wafer holder; a nozzle disposed on the wafer holder, wherein the nozzle includes: an orifice; a blocking device disposed at the orifice; and an actuator connected to the blocking device.

[0004] According to some embodiments of this disclosure, a semiconductor manufacturing apparatus includes: a wafer holder; a nozzle on the wafer holder; a nozzle on the nozzle and having a channel; and an actuator located around the channel.

[0005] According to some embodiments disclosed herein, a semiconductor manufacturing apparatus includes: a wafer holder; a nozzle disposed on the wafer holder, wherein the nozzle includes: a tube having an orifice; a blocking device disposed at the orifice; and an actuator located inside the tube and connected to the blocking device. Attached Figure Description

[0006] The state disclosed herein is best understood when studied in conjunction with the accompanying figures, as described in the following detailed description.

[0007] Figure 1A The illustration shows a semiconductor manufacturing system according to some embodiments;

[0008] Figure 1B The illustration shows a bottom view of a nozzle with a nozzle according to some embodiments;

[0009] Figure 2A and Figure 2B The figure shows a cross-sectional view of a nozzle device with an adjustable orifice according to some embodiments;

[0010] Figure 2C and Figure 2D The figure shows a cross-sectional view of a nozzle device according to some embodiments;

[0011] Figure 3A and Figure 3B The figure shows a cross-sectional view of a nozzle device with an adjustable nozzle configuration according to some embodiments;

[0012] Figure 4A and Figure 4B The figure shows a cross-sectional view of a nozzle device with an adjustable nozzle configuration according to some embodiments;

[0013] Figure 5A and Figure 5B The figure shows a cross-sectional view of a nozzle device with an adjustable nozzle configuration according to some embodiments;

[0014] Figure 5C and Figure 5D The illustration shows a planar distribution of material dispersed by a nozzle device according to some embodiments;

[0015] Figure 6A and Figure 6B The figures show a cross-sectional side view and a bottom view of a nozzle device with an adjustable nozzle configuration according to some embodiments.

[0016] Figure 6C The illustration shows a planar distribution of material dispersed by a nozzle device according to some embodiments;

[0017] Figure 6D The figure shows a bottom view of a nozzle with an adjustable configuration according to some embodiments.

[0018] Figure 7 The figure shows a bottom view of a nozzle with an adjustable configuration according to some embodiments.

[0019] Figure 8 The figure shows a bottom view of a nozzle assembly with an adjustable nozzle configuration according to some embodiments;

[0020] Figure 9 The figure shows a bottom view of a nozzle assembly with an adjustable nozzle configuration according to some embodiments;

[0021] Figure 10 The figure shows a flowchart of a method for performing a semiconductor manufacturing process using a nozzle device according to some embodiments;

[0022] Figure 11A The illustration shows the configuration of nozzles on multiple segments of a nozzle according to some embodiments;

[0023] Figure 11B The illustration shows a reference outline of material dispersed on a wafer according to some embodiments;

[0024] Figure 11C The illustration shows the thickness profile of a material dispersed on a wafer according to some embodiments;

[0025] Figure 12 The illustration is a block diagram of an exemplary computer system according to some embodiments.

[0026] Illustrative embodiments will now be described with reference to the accompanying drawings. In the drawings, similar reference numerals generally denote the same, functionally similar, and / or structurally similar elements.

[0027] [Symbol Explanation]

[0028] 100: System

[0029] 102: Chamber

[0030] 104: Wafer Holder

[0031] 106: Sprayer Head

[0032] 107: Materials

[0033] 108: Wafer

[0034] 110: Nozzle device

[0035] 120: Nozzle

[0036] 130: Nozzle control device

[0037] 150: Control device

[0038] 152: Material supply device

[0039] 154: Material Supply Channel

[0040] 158: Analyzer Device

[0041] 210: Nozzle device

[0042] 212: pipe

[0043] 213: Channel

[0044] 214: Blocking device

[0045] 215: Bottom perimeter

[0046] 216: Rod

[0047] 217: Materials

[0048] 218: Orifice

[0049] 219: Screws

[0050] 222: Actuator

[0051] 224: Spring

[0052] 310: Nozzle device

[0053] 312: Arm

[0054] 313: Inner surface

[0055] 314: Outer surface

[0056] 315: Inner surface

[0057] 316: Sleeve

[0058] 317: Materials

[0059] 318: Channel

[0060] 322: Actuator

[0061] 330: Nozzle control device

[0062] 332: Motion transmission mechanism

[0063] 334: Brake

[0064] 410: Nozzle device

[0065] 412: pipe

[0066] 416: Valve

[0067] 417: Materials

[0068] 418: Channel

[0069] 422: Actuator

[0070] 430: Nozzle control device

[0071] 432: Motion transmission mechanism

[0072] 510: Nozzle device

[0073] 512A~512B: Arm

[0074] 517: Materials

[0075] 518: Channel

[0076] 519: Planar Distribution

[0077] 522A~522B: Actuators

[0078] 530: Nozzle control device

[0079] 532A~532B: Motion transmission mechanism

[0080] 606: Sprayer Head

[0081] 610: Nozzle device

[0082] 617: Materials

[0083] 618A~618B: Angle range

[0084] 618D: Double Arrow

[0085] 619: Planar Distribution

[0086] 620: Nozzle

[0087] 622: Actuator

[0088] 630: Nozzle control device

[0089] 632: Motion transmission mechanism

[0090] 706: Sprayer Head

[0091] 718: Double Arrow

[0092] 720: Nozzle

[0093] 722: Magnetic actuator

[0094] 810: Nozzle device

[0095] 818: Arrow

[0096] 820: Nozzle

[0097] 822: Current Source

[0098] 830: Nozzle control device

[0099] 832: Shaped metal alloy wire

[0100] 910: Nozzle device

[0101] 920: Nozzle

[0102] 922X~922Y: Temperature Controller

[0103] 930: Nozzle control device

[0104] 932X~932Y: Bimetallic strip

[0105] 1000: Method

[0106] 1010~1035: Operation

[0107] 1106: Sprayer Head

[0108] 1108: Wafer

[0109] 1120: Nozzle

[0110] 1140~1150: Sprinkler section

[0111] 1146A~1146B: Sprayer head segments

[0112] 1160~1170: Wafer Segment

[0113] 1166A~1166B: Wafer sub-segments

[0114] 1180~1189: Wafer Segment

[0115] 1190: Thickness Profile

[0116] 1195: Reference Profile

[0117] 1200: Computer System

[0118] 1202: User Input / Output Interface

[0119] 1203: User Input / Output Device

[0120] 1204: Processor

[0121] 1206: Communication Infrastructure

[0122] 1208: Memory

[0123] 1210: Memory

[0124] 1212: Hard Drive

[0125] 1214: Removable Storage Drive

[0126] 1218: Removable storage unit

[0127] 1220: Interface

[0128] 1222: Removable storage unit

[0129] 1224: Interface

[0130] 1226: Communication Path

[0131] 1228: Remote device

[0132] D1~D2: Diameter

[0133] L3A: First width

[0134] L3B: Second Width

[0135] Z: Z-axis Detailed Implementation

[0136] The following disclosure provides numerous different embodiments or instances for implementing various features of the provided subject matter. Specific examples of components and configurations are described below to simplify this disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the following description may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. As used herein, the formation of a first feature on a second feature means that the first and second features are formed in direct contact. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition itself does not indicate a relationship between the various embodiments and / or configurations discussed.

[0137] Furthermore, for ease of description, spatial relative terms such as “below,” “under,” “lower,” “above,” “upper,” and similar terms are used herein to describe the relationship between one element or feature illustrated in the figures and another element(s). Spatial relative terms are intended to cover different orientations of the device during use or operation, other than those depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted similarly accordingly.

[0138] It should be noted that references to "an embodiment," "an example embodiment," "exemplary embodiment," "illustrative," etc., in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, whether explicitly described or not, it is within the knowledge of those skilled in the art to influence such feature, structure, or characteristic in conjunction with other embodiments.

[0139] It should be understood that the phrases or terms used herein are for descriptive purposes and not for limitation, and therefore the terms or phrases used herein shall be interpreted by those skilled in the art based on the teachings herein.

[0140] In some embodiments, the terms “about” and “substantially” may indicate a value of a given quantity that varies within 5% of that value (e.g., ±1%, ±2%, ±3%, ±4%, ±5%). These values ​​are merely examples and are not intended to be limiting. The terms “about” and “substantially” may refer to a percentage of a value as interpreted by one skilled in the art in accordance with the teachings herein.

[0141] Semiconductor manufacturing processes may include dispersing materials (e.g., precursor materials, chemical solutions, and deionized (DI) water) onto a wafer for various operations, such as forming device layers / structures or cleaning the wafer. Operations can be performed by dispersing the material through nozzles disposed on the wafer. The uniformity of the layer of material dispersed on the wafer affects the quality of the semiconductor devices formed on the wafer.

[0142] The uniformity of the material layer dispersed on a wafer can be affected by various factors, such as the material's chemical properties (e.g., reactivity, pH, and stability), physical properties (e.g., temperature, pressure, and whether it is in gaseous, liquid, or plasma form), and mechanical properties (e.g., viscosity, flow rate, and compressibility). These factors can vary over the duration of the manufacturing process and can affect the uniformity of the material layer dispersed on the wafer. For example, nozzles used to disperse the material may be susceptible to material condensation or buildup within the nozzle. Partial or complete blockages formed in the nozzle can lead to abnormal nozzle performance and affect the uniformity of the material dispersed on the wafer. These nozzles require replacement, which can be time-consuming and labor-intensive, jeopardizing the production volume of semiconductor device manufacturing processes.

[0143] To address the aforementioned challenges, this disclosure provides apparatus and methods for implementing an adjustable nozzle arrangement in semiconductor manufacturing processes. The apparatus may include nozzles with adjustable configurations (such as nozzle dimensions and orientation), which facilitates control over the flow rate and orientation of material dispersed by the nozzle, thereby improving the uniformity of the material dispersed on the wafer. The methods may include collecting data on the thickness profile of the material dispersed on the wafer, comparing the thickness profile with a reference profile, and adjusting the nozzle configuration to optimize the uniformity of the material dispersed on the wafer.

[0144] Figure 1AThe figure illustrates a system 100 for semiconductor manufacturing according to some embodiments. System 100 may include a chamber 102, a wafer holder 104 within the chamber 102, and a nozzle 106 disposed within the chamber 102 and above the wafer holder 104. The wafer holder 104 holds a wafer 108. System 100 may further include one or more nozzle arrangements 110. Each nozzle arrangement 110 may include a nozzle 120 mounted on the nozzle 106 for delivering material 107 into the chamber 102. The nozzle 120 may be coupled to a material supply device 152 outside the chamber 102 via a material supply channel 154. Each nozzle arrangement 110 may further include one or more nozzle control devices 130 coupled to the nozzle 120 for controlling one or more configurations of the nozzle 120. System 100 may further include an analyzer device 158 for measuring the uniformity of the material 107 dispersed on the wafer 108. The system 100 may further include a control device 150 coupled to the nozzle control device 130, the material supply device 152, and the analyzer device 158.

[0145] System 100 may include additional components required for operation. By way of example, and not limitation, such components may include transfer devices, robotic arms, observation ports, pumps, valves, exhaust lines, heating elements, gas and chemical supply lines, controllers, and external and internal electrical connections to other components in the cluster tool (e.g., temperature sensors, pressure sensors, chemical analyzers, temperature controllers, and pressure controllers). These additional components may not be included in... Figure 1A The description is as depicted in the text, but within the spirit and scope of this disclosure.

[0146] Chamber 102 may be a processing chamber that provides a vacuum environment for semiconductor device fabrication processes on wafer 108, requiring a vacuum environment (e.g., a vacuum pressure below 10⁻⁴ Torr) to maintain the desired mean free path of, for example, reactive gases, plasma, and / or electrons in chamber 102 during semiconductor device fabrication processes. In some embodiments, chamber 102 may be a deposition chamber that performs thin film deposition on wafer 108 by depositing material 107 on wafer 108. In some embodiments, chamber 102 may be a cleaning chamber that performs a cleaning operation on wafer 108 by dispersing material 107 in liquid or gaseous form on wafer 108 to remove contaminants on wafer 108.

[0147] Wafer holder 104 can be used to hold wafer 108 during a semiconductor manufacturing process. In some embodiments, wafer holder 104 may include a vacuum chuck to secure wafer 108. In some embodiments, wafer holder 104 may include screws and pins to hold wafer 108 in position on wafer holder 104. In some embodiments, wafer holder 104 may provide controllable temperature conditions for wafer 108. For example, wafer holder 104 may include a heater and / or a cooling channel through which coolant can flow. In some embodiments, wafer holder 104 may be motor-driven and can rotate during the manufacturing process. In some embodiments, wafer holder 104 can be used to hold multiple wafers, similar to wafer 108 to be processed. In some embodiments, system 100 may include multiple wafer holders disposed in chamber 102, similar to wafer holder 104.

[0148] The nozzle 106 is a platform on which the nozzle assembly 110 is mounted. (See reference) Figure 1B The illustration shows a bottom view of a nozzle 106, which may have a circular shape, with nozzles 120 uniformly disposed on the bottom surface of the nozzle 106. In some embodiments, the nozzle 106 may have different shapes, such as square, polygonal, elliptical, or irregular shapes. In some embodiments, the nozzles 120 may be disposed non-uniformly on the bottom surface of the nozzle 106. (Return to Reference) Figure 1A In some embodiments, the nozzle 106 may include a threaded mounting hole for mounting a nozzle 120 to be mounted on the bottom surface of the nozzle 106. In some embodiments, a nozzle control device 130 may be disposed on the top surface of the nozzle 106 and coupled to the nozzle 120 via the nozzle 106. In some embodiments, a material supply channel 154 may be disposed on the top surface of the nozzle 106 and connected to the nozzle 120 via the nozzle 106, thereby supplying material 107 to the chamber 102 via the nozzle 120.

[0149] Each nozzle 120 may include a channel ( Figure 1A (Not shown in the image), material 107 can flow through this channel and be supplied to chamber 102. In some embodiments, nozzle 120 may be the same type of nozzle that supplies the same material. In some embodiments, nozzle 120 may include different types of nozzles that supply different materials for different processing purposes. For example, nozzle 120 may include a first type of nozzle dedicated to supplying a first material (e.g., a precursor gas for forming a thin film on wafer 108) and a second type of nozzle dedicated to supplying a second material (e.g., a cleaning solution for cleaning wafer 108).

[0150] In some embodiments, for each nozzle assembly 110, the nozzle 120 may be configured to be controlled by the nozzle control device 130. In some embodiments, the nozzle 120 may be controlled such that the size of the channel of the nozzle 120 may be adjusted, thereby adjusting the flow rate of the material 107 flowing through the nozzle 120. In some embodiments, the nozzle 120 may include a valve in the channel and controlled by the nozzle control device 130 to adjust the flow rate of the material 107 flowing through the nozzle 120. In some embodiments, the orientation of the nozzle 120 may be controlled by the nozzle control device 130 such that the dispersion direction of the material 107 supplied to the chamber 102 may be adjusted. For example, the nozzle 120 may include a ball joint that is rotatable along certain axes of rotation to adjust the orientation of the nozzle 120.

[0151] In some embodiments, all nozzles 120 may have one or more of the same type of adjustable configuration (e.g., channel size and / or orientation). In some embodiments, different types of nozzles 120 with different adjustable configurations may be mounted on the nozzle head 106. For example, the channel size of some nozzles 120 is adjustable, while the orientation of some other nozzles 120 is adjustable.

[0152] Nozzle control device 130 may be coupled to nozzle 120 and used to control the configuration of nozzle 120. Nozzle control device 130 may include one or more actuators that provide linear or circular motion. Figure 1A (Not shown) to adjust the configuration of nozzle 120. For example, nozzle control device 130 may include an electric motor, hydraulic actuator, pneumatic actuator, magnetic actuator, piezoelectric actuator, shape-memory alloy (SMA) actuator, thermal actuator, and / or combinations thereof. In some embodiments, nozzle control device 130 may include a manual actuator (e.g., a manual knob or button) such that the configuration of nozzle 120 can be manually tuned by a user. In some embodiments, manual actuator may include incremental markings that quantitatively indicate the configuration of nozzle 120 (e.g., the angle of the nozzle 120's orientation or the size of the nozzle 120's channel).

[0153] In some embodiments, the nozzle 120 may be marked for effective user identification. In some embodiments, the nozzle control device 130 may further include a motion transmission mechanism. Figure 1A(Not shown in the image) to couple the actuator to the nozzle 120. A motion transmission mechanism can be used to deliver and / or convert linear or circular motion generated by the actuator to the nozzle 120, allowing the configuration of the nozzle 120 to be adjusted and / or fine-tuned. The motion transmission mechanism may include mechanical components such as shafts, hinges, sleeves, gears, worm gears, racks, springs, stops, and / or combinations thereof to facilitate the delivery and / or conversion of linear or circular motion generated by the actuator.

[0154] Material supply device 152 may include one or more containers storing one or more materials in solid, liquid, and / or gaseous form, and supplying materials such as material 107 to nozzle 120 via material supply channel 154. In some embodiments, material supply device 152 may include containers storing materials for forming structures in wafer 108. For example, material supply device 152 may include containers storing precursor gases for chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE) processes. In some embodiments, material supply device 152 may include containers storing materials for performing cleaning operations on wafer 108. For example, material supply device 152 may include containers storing DI water, cleaning solution, nitrogen, and inert gases.

[0155] An analyzer device 158 may be disposed on the surface of wafer 108 and used to measure the uniformity of material 107 dispersed on wafer 108. In some embodiments, the analyzer device 158 may implement optical methods to measure the thickness of material 107 on wafer 108. For example, the analyzer device 158 may include an elliptic transducer to measure the thickness profile of material 107 dispersed on wafer 108 by scanning the top surface of wafer 108 or sampling different locations on the top surface of wafer 108. In some embodiments, the analyzer device 158 may implement other methods, such as acoustic or mechanical methods, to measure the uniformity of material 107 dispersed on wafer 108. In some embodiments, the analyzer device 158 may be mounted on a robotic arm ( Figure 1A (Not shown) On the wafer 108, an analyzer device 158 is driven through the top surface of the wafer 108 to measure the uniformity of the material 107 dispersed on the wafer 108. In some embodiments, the analyzer device 158 may generate control wafer data based on the thickness profile of the material 107 dispersed on the wafer 108.

[0156] Control device 150 can be used to control a semiconductor manufacturing process. In some embodiments, control device 150 may include a computer system. Figure 1A As shown, the control device 150 can communicate with the nozzle control device 130, the material supply device 152, and the analyzer device 158. In some embodiments, communication between the control device 150 and the aforementioned components can be via cable and / or wirelessly. In some embodiments, during a measurement operation, the control device 150 can send commands to the analyzer device 158 to control the analyzer device 158 to measure the thickness profile of the material 107 dispersed on the wafer 108 and receive data on the thickness profile sent by the analyzer device 158. In some embodiments, the control device 150 can compare the thickness profile with a predetermined reference profile and calculate a scheme for adjusting the configuration of the nozzle 120 based on the difference between the thickness profile and the reference profile, thereby improving the uniformity of the thickness of the material 107 dispersed on the wafer 108. In some embodiments, during a calibration operation, according to the calculated scheme, the control device 150 can send a calibration command to the nozzle control device 130 to adjust the configuration of the nozzle 120. In some embodiments, the control device 150 may be used to repeat the measurement and calibration processes to adjust the configuration of the nozzle 120 until the difference between the thickness profile and the reference profile is reduced to below a predetermined threshold. In some embodiments, once the difference between the thickness profile and the reference profile is below the threshold, the control device 150 may be used to perform a manufacturing operation (e.g., a deposition operation or a cleaning operation) by controlling the material supply device 152 to supply material 107 to the nozzle 120 via the material supply channel 154. In some embodiments, during the manufacturing operation, the control device 150 may be used to control the analyzer device 158 to perform real-time measurement of the thickness profile of the material 107 dispersed on the wafer 108, determine whether the configuration of one or more of the nozzles 120 needs to be adjusted, and, if necessary, control the nozzle control device 130 to perform real-time adjustment of the nozzle 120 configuration.

[0157] This disclosure provides different embodiments of the nozzle device 110, as referenced below. Figures 2A to 11C As stated above.

[0158] Figure 2A and Figure 2B The figure shows a cross-sectional view of a nozzle device 210 having an adjustable-sized orifice 218 according to some embodiments. Figure 2C and Figure 2D The nozzle assembly 210 is illustrated along the following lines. Figure 1A The middle A-A' line and Figure 1B Cross-sectional view of line B-B'. Nozzle device 210 is... Figure 1AOne of the nozzle devices 110. Nozzle device 210 may include a tube 212 forming a channel through which material 217 can be supplied to a chamber (e.g., Figure 1A In some embodiments, the tube 212 may have a cylindrical cross-sectional shape. In some embodiments, the cross-section of the tube 212 may have other shapes, such as rectangular, polygonal, elliptical, and irregular shapes. The nozzle device 210 may further include an actuator 222 disposed in the tube 212, a blocking device 214 disposed near the end of the tube 212, and a rod 216 connecting the actuator 222 and the blocking device 214. In some embodiments, the blocking device 214 may have a conical shape and may be coaxially disposed within the tube 212 along the Z-axis. In some embodiments, the nozzle device 210 may further include a screw 219 disposed at the other end of the tube 212. The screw 219 is used to mount the nozzle device 210 to a nozzle (e.g., Figure 1A On the bottom surface of the nozzle 106. The nozzle assembly 210 may further include a channel 213 provided via a screw 219. The channel 213 may be coupled to a material supply channel (e.g., Figure 1A The material supply channel 154 is used to supply material 217 to pipe 212.

[0159] In some embodiments, the Z-axis position of the blocking device 214 can be configured by the actuator 222, such that the end of the tube 212 is partially or completely blocked by the blocking device 214. In some embodiments, the tube 212 may have a diameter D1, and the bottom periphery 215 of the blocking device 214 may have a diameter D2. In some embodiments, the diameter D1 may be larger than the diameter D2, such as... Figure 2A and Figure 2B As shown, the blocking device 214 can partially block the end of the tube 212. In some embodiments, the diameter D1 may be substantially the same as or smaller than the diameter D2, such that the blocking device 214 can partially or completely block the end of the tube 212, depending on the relative position between the blocking device 214 and the tube 212.

[0160] In some embodiments, when the blocking device 214 partially blocks the end of the tube 212, the blocking device 214 and the tube 212 together can form an annular orifice 218, through which material 217 is dispersed in the chamber. Due to its tapered shape, the size of the orifice 218 can be adjusted as the blocking device 214 moves along the Z-axis, thus adjusting the flow rate of material 217 through the orifice 218. Referring to the first configuration, as... Figure 2A and Figure 2CAs shown, the blocking device 214 is in a first position, such that the bottom periphery 215 of the blocking device 214 is substantially aligned with the end of the tube 212, and the orifice 218 has a first dimension, which is the air gap difference between a first circle with diameter D1 and a second circle with diameter S1. Referring to the second configuration, as... Figure 2B and Figure 2D As shown, the blocking device 214 is in a second position such that the bottom periphery 215 of the blocking device 214 is a distance L outside the end of the tube 212, and the orifice 218 has a second size larger than the first size, since the second size is the air gap difference between a first circle with a diameter D1 and a third circle with a diameter S2 smaller than S1. In some embodiments, the size of the orifice 218 can be calculated based on the width of the annular shape of the orifice 218, such as D1-S1 and D1-S2. In some embodiments, the width of the annular shape of the orifice 218 can be adjusted between about 0.2 mm and about 1.5 mm, and correspondingly, the flow rate of the material 217 can be adjusted between about 10000 sccm and about 15000 sccm. In some embodiments, if the width of the annular shape of the orifice 218 is less than about 0.2 mm, the size of the orifice may be too small, making the orifice 218 more susceptible to condensation or accumulation of the material 217. In some embodiments, if the width of the annular shape of the orifice 218 is greater than about 1.5 mm, it will take longer to adjust the position of the blocking device 214 along the Z-axis, thus adversely affecting the efficiency of the manufacturing operation. In some embodiments, if the flow rate of the material 217 is less than about 10,000 sccm, the flow rate of the material 217 may be insufficient to remove the material 217 that condenses or accumulates at the orifice 218. In some embodiments, if the flow rate of the material 217 is greater than about 15,000 sccm, the flow rate of the material 217 may be too high, thus unnecessarily wasting the material 217.

[0161] In some embodiments, actuator 222 may include a spring 224 for retracting blocking device 214 along the Z-axis. In some embodiments, spring 224 may be configured to be in a relaxed state or a retracted state. Figure 2A As shown, in the relaxed state, when the bottom periphery 215 of the blocking device 214 is substantially aligned with the end of the tube 212 and the size of the orifice 218 is minimized, the spring 224 is not stretched. Figure 2B As shown, in the retracted state, when the bottom periphery 215 of the blocking device 214 is outside the end of the tube 212, the spring 224 is stretched. In some embodiments, when the material 217 does not flow through the tube 212, the spring 224 can be configured to a relaxed state without retracting the blocking device 214, such that the bottom periphery 215 of the blocking device 214 remains substantially aligned with the end of the tube 212, as shown. Figure 2A and Figure 2CAs shown. In some embodiments, when the manufacturing operation begins and material 217 flows through channel 213 into tube 212, blocking device 214 can be used to respond to the initial release of material 217 (e.g., material 217 initially flowing through orifice 218) and increase the size of orifice 218 by pushing it outward a distance from the end of tube 212 by the initial release, such as... Figure 2B and Figure 2D As shown. In some embodiments, after the blocking device 214 is initially released, the spring 224 is used to gradually retract the blocking device 214 until the spring 224 returns to a relaxed state.

[0162] For example, the manufacturing operation may be a cleaning operation that lasts for a predetermined period of time, during which the cleaning solution flows through the orifice 218 and is dispersed on the wafer to be cleaned (e.g., Figure 1A On the surface of wafer 108. The blocking device 214 can be used to push outward by the cleaning solution initially flowing through orifice 218 to increase the size of orifice 218, and then gradually retract over a period of time to gradually decrease the size of orifice 218 as the cleaning solution continues to flow through orifice 218, until spring 224 returns to a relaxed state. In some embodiments, the predetermined time period may be about 5 hours or less (e.g., about 1 hour, about 2 hours, about 3 hours, and about 4 hours), and spring 224 can be used to retract the blocking device 214 for a duration substantially matching the predetermined time period. For example, spring 224 may have an elastic constant, thereby providing a retraction force greater than the pushing force of material 217 flowing through orifice 218, such that the blocking device 214 can gradually retract over the predetermined time period.

[0163] The adjustable size of the orifice 218 of the nozzle assembly 210 can provide improved uniformity of the material 217 dispersed on the wafer. During manufacturing operations, the material 217 flowing through the nozzle assembly 210 can deposit particles on the inner surface of the nozzle assembly 210, for example, on the inner surface of the tube 212 or on the surface of the blocking device 214. Particles deposited at or near the orifice 218 can affect the uniformity of the material 217 dispersed on the wafer. For example, particles can partially block the orifice 218, causing the flow of material 217 from the orifice 218 to become anisotropic in different directions, thereby reducing the uniformity of the material 217 dispersed on the wafer. As described above, in response to the initial release of the material 217 flow through the orifice, the blocking device 214 increases the orifice size to sufficiently remove particles blocking the orifice 218, thereby improving the uniformity of the material 217 dispersed on the wafer. In addition, when the blocking device 214 retracts via the spring 224, the relative movement between the blocking device 214 and the tube 212 can also prevent particles deposited on the inner surface from accumulating between the tube 212 and the blocking device 214, thereby promoting the smooth and uniform flow of the material 217 through the nozzle device 210.

[0164] In some embodiments, as Figure 2A and Figure 2B As shown, the nozzle device 210 with spring 224 in actuator 222 can operate automatically because the blocking device 214 can increase the size of the orifice in response to the flow of material 217 via the initial release of the orifice, and then gradually decrease the size via the retraction of spring 224, without being subject to other external control.

[0165] In some embodiments, the actuator 222 may be controlled by external means (e.g., via...). Figure 1A The nozzle control device 130 (or manually) operates and controls the position of the blocking device 214, unlike the implementation of a spring 224 to automatically retract the blocking device 214. For example, the actuator 222 may include an electric motor that generates rotational motion and may be coupled to a thread on the rod 216, such that the rotational motion is converted into linear motion of the blocking device 214 along the Z-axis. In some embodiments, the actuator 222 may include a manual knob, allowing the position of the blocking device 214 to be manually adjusted by the user. In some embodiments, the actuator 222 may be configured to include the automatic functions and external controls described above.

[0166] Figure 3A and Figure 3B The figure shows a cross-sectional view of a nozzle device 310 with an adjustable configuration according to some embodiments. The nozzle device 310 may be... Figure 1AOne of the nozzle devices 110. Nozzle device 310 may include an arm 312 forming a channel 318 through which material 317 can be conveyed to a chamber (e.g., Figure 1A In the chamber 102). In some embodiments, the channel 318 may be surrounded by the inner surface 313 of the arm 312. In some embodiments, the channel 318 may have a circular cross-sectional shape. In some embodiments, the cross-section of the channel 318 may be other shapes, such as rectangular, polygonal, elliptical, and irregular shapes. In some embodiments, the nozzle device 310 may further include a sleeve 316. In some embodiments, the outer surface 314 of each of the arms 312 and the inner surface 315 of the sleeve 316 may be coupled to each other by matching the threads on the outer surface 314 and the threads on the inner surface 315, such that the vertical position of the arm 312 can be uniformly adjusted by rotating the sleeve 316. In some embodiments, the outer surface 314 of the arm 312 and the inner surface 315 of the sleeve 316 may be inclined and have an angle θ relative to the horizontal plane (e.g., in the X direction), such that when the vertical position of the arm 312 is adjusted by rotating the sleeve 316, the distance between the inner surfaces 313 of the arm 312 may be adjusted accordingly, thereby adjusting the size of the channel 318. For example, such as Figure 3A As shown, the channel 318 may have a first width L3A, such as Figure 3B As shown, the channel 318 may have a second width L3B greater than the first width L3A. In some embodiments, the flow rate of material 317 through the channel 318 may be adjusted according to the size of the channel 318. In some embodiments, the material 317 flowing through the channel 318 with a larger width may have a greater flow rate.

[0167] In some embodiments, the nozzle device 310 may further include a nozzle control device 330 for rotating the sleeve 316. The nozzle control device 330 may be... Figure 1A One of the nozzle control devices 130 in the process. For example... Figure 3A and Figure 3BAs shown, the nozzle control device 330 may include an actuator 322 and a motion transmission mechanism 332. The actuator 322 is used to provide linear and / or rotational motion, and the motion transmission mechanism 332 is used to apply and / or change the linear and / or rotational motion to rotate the sleeve 316. In some embodiments, the actuator 322 may be an electric motor, a hydraulic actuator, a pneumatic actuator, a magnetic actuator, a piezoelectric actuator, a shape-memory alloy (SMA) actuator, a thermal actuator, and / or combinations thereof. In some embodiments, the actuator 322 may include a micro stepper motor to fine-tune the position of the arm 312 such that the increments in the size of the channel 318 are as low as about 1% of the maximum size of the channel 318. In some embodiments, the actuator 322 may include a manual knob for manual control, the manual knob may include incremental markings that quantitatively indicate the configuration of the nozzle 320. In some embodiments, the motion transmission mechanism 332 may include mechanical components such as shafts, hinges, sleeves, gears, worm gears, racks, springs, stoppers, and / or combinations thereof. In some embodiments, the nozzle control device 330 may further include a brake 334 for fixing the sleeve 316 when the actuator 322 is not driving the sleeve 316 to rotate. In some embodiments, the brake 334 may prevent the dimensions of the channel 318 from changing due to unwanted disturbances, such as vibrations caused by the flow of material 317, and thus stabilize the flow rate of material 317.

[0168] According to some embodiments, Figure 4A The figure shows a cross-sectional side view of a nozzle assembly 410 with adjustable configuration. Figure 4B The figure shows a cross-sectional top view of the nozzle device 410. The nozzle device 410 is... Figure 1A One of the nozzle devices 110. Nozzle device 410 may include a tube 412 forming a channel 418 through which material 417 can be supplied to a chamber (e.g., Figure 1A In the chamber 102). In some embodiments, the channel 418 may have a circular cross-sectional shape. In some embodiments, the cross-section of the channel 418 may be other shapes, such as rectangular, polygonal, elliptical, and irregular shapes. The nozzle device 410 may further include a nozzle control device 430, which may include an actuator 422 and a motion transmission mechanism 432. Unless otherwise stated, refer to Figure 3A and Figure 3B The description of actuator 322 and motion transmission mechanism 332 applies to actuator 422 and motion transmission mechanism 432. Nozzle device 410 may further include a valve 416 in channel 418 for rotation via actuator 422 through motion transmission mechanism 432. Figure 4AAs shown, the angle θ of valve 416 relative to the Z-axis of pipe 412 can be between approximately 0° and approximately 90°. Changing the angle θ adjusts the effective cross-section of material 417 flowing through pipe 412, thereby adjusting the flow rate of material 417.

[0169] Figure 5A and Figure 5B The figure shows a cross-sectional side view (e.g., along the XZ plane) of a nozzle device 510 with an adjustable configuration according to some embodiments. The nozzle device 510 may be... Figure 1A One of the nozzle devices 110. The nozzle device 510 may include arms 512 (e.g., arms 512A and 512B) forming a channel 518 through which material 517 can be supplied to a chamber (e.g., Figure 1A In the chamber 102). The nozzle device 510 may further include a nozzle control device 530, which may include actuators 522 (e.g., actuators 522A and 522B) and motion transmission mechanisms 532 (e.g., motion transmission mechanisms 532A and 532B). Each of the actuators 522 can be used to control the vertical and / or horizontal position of one of the arms 512 via each of the motion transmission mechanisms 532. For example, such as Figure 5A and Figure 5B As shown, actuator 522A can be used to control the vertical and / or horizontal position of arm 512A via motion transmission mechanism 532A, and actuator 522B can be used to control the vertical or horizontal position of arm 512B via motion transmission mechanism 532B. Unless otherwise stated, Figure 3A and Figure 3B The description of actuator 522 and motion transmission mechanism 532 applies to actuator 522 and motion transmission mechanism 532. In some embodiments, the horizontal position of arm 512 can be adjusted to adjust the horizontal distance between arms 512, thereby adjusting the flow rate of material 517, similar to... Figure 3A and Figure 3B The above-described embodiments are shown.

[0170] In some embodiments, the vertical position of arm 512 may be adjusted to adjust the orientation of the dispersed material 517. Figure 5C and Figure 5D The figure illustrates a planar distribution 519 of material 517 dispersed on a horizontal plane (e.g., a plane of XY coordinates) according to some embodiments, respectively corresponding to... Figure 5A and Figure 5B The vertical position of arm 512 is configured. The origin of the XY coordinate system corresponds to the Z-axis of channel 518. In some embodiments, the vertical position of arm 512 can be adjusted differently, thereby adjusting the planar distribution 519. For example, as... Figure 5A and Figure 5CAs shown, the vertical position of arm 512A is substantially the same as that of arm 512B, material 517 is dispersed in a substantially uniform manner relative to the Z-axis, and planar distribution 519 is symmetrical about the origin of the XY coordinate system. In another example, as... Figure 5B and Figure 5D As shown, the vertical position of arm 512A is lower than that of arm 512B, and the material 517 is distributed unevenly relative to the Z-axis, with more material 517 distributed on the right side than on the left. Furthermore, the planar distribution 519 is asymmetrical with respect to the origin of the XY coordinates, shifting positively towards the X direction.

[0171] During the manufacturing process, material 517 flowing through nozzle assembly 510 deposits particles on the inner surface of channel 518, affecting the uniformity of material 517 dispersion. For example, particles partially obstructing channel 518 can cause planar distribution 519 to deviate from the Z-axis in a substantially uniform manner. In some embodiments, adjusting the planar distribution 519 by adjusting the vertical position of one or more arms 512 can mitigate particles obstructing channel 518 and improve the uniformity of material 517 dispersion.

[0172] According to some embodiments, Figure 6A The figure shows a cross-sectional side view (e.g., along the XZ plane) of a nozzle assembly 610 with adjustable configuration. Figure 6B The illustration shows a cross-sectional top view of the nozzle assembly 610 (e.g., along the XY plane). The nozzle assembly 610 may be... Figure 1A One of the nozzle devices 110. The nozzle device 610 may include a nozzle 620 disposed on the nozzle 606 to supply material 617 to a chamber (e.g., Figure 1A The nozzle assembly 610 may further include a nozzle control device 630 disposed on the nozzle head 606. The nozzle control device 630 may include an actuator 622 and a motion transmission mechanism 632. Unless otherwise stated, Figure 3A and Figure 3B The description of actuator 322 and motion transmission mechanism 332 applies to actuator 622 and motion transmission mechanism 632.

[0173] In some embodiments, the nozzle 620 and the motion transmission mechanism 632 can be coupled via a ball joint configuration, thereby allowing adjustment of the direction of the nozzle 620. In some embodiments, such as Figure 6A As shown, the direction of nozzle 620 can be adjusted in the XZ plane, and the angle α between nozzle 620 and the vertical direction can be within the range 618A. For example, angle α can be between about 0° and about 30°, between about 0° and about 45°, between about 0° and about 60°, or between about 0° and about 90°. In some embodiments, such as Figure 6BAs shown, the direction of nozzle 620 can be adjusted within a range 618B, wherein the angle between the projection of the direction of nozzle 620 in the XY plane and the X-axis is β. For example, angle β can be adjusted within a range 618B covering the entire 360° range, or it can be one or more fixed values. In some embodiments, the direction of nozzle 620 can be adjusted in the two degrees of freedom as described above. In some embodiments, the direction of nozzle 620 can be adjusted in only one of the two degrees of freedom as described above. For example, nozzle 620 can be configured to have a fixed angle β and an angle α that can be adjusted within a range, and the planar distribution 619 of material 617 dispersed on a horizontal plane (e.g., the XY plane) is as follows. Figure 6C As shown in the figure, the diagram illustrates the elliptical shape of the planar distribution 619. In some embodiments, such as Figure 6D As shown, the nozzle 620 is configured to be adjustable in the same degree of freedom (as indicated by the double arrow 618D) and can be mounted on the nozzle 606.

[0174] Figure 7 The figure shows a bottom view of a nozzle 706 according to some embodiments, wherein a nozzle 720 is mounted on the nozzle 706. The direction of the nozzle 720 is adjustable. For example, each nozzle 720 may include a ball joint structure, similar to... Figure 6A and Figure 6B The nozzle 620 is shown. In some embodiments, each nozzle 720 includes a magnetic material and is used to change direction in response to a magnetic field. In some embodiments, a magnetic actuator 722 may be disposed on the nozzle head 706 and adjacent to the nozzle 720. Each magnetic actuator 722 may include one or more electromagnets (e.g., solenoids) and may generate a magnetic field having parameters controlled by a current traveling through the electromagnet (e.g., the strength and / or orientation of the magnetic field at the location of the nozzle 720). Thus, the direction of the nozzle 720 can be adjusted by a controlled current traveling through the electromagnet of the magnetic actuator 722. For example, such as Figure 7 As shown, nozzle 720 can be configured to have its direction adjustable along the Y direction, as indicated by double arrow 718. In some embodiments, nozzle 720 can be configured to have an adjustable direction in two degrees of freedom. In some embodiments, parameters of the current traveling through the electromagnet of the magnetic actuator 722 can be controlled by a control device, such as... Figure 1A It is controlled by the control device 150 in the middle.

[0175] Figure 8 The figure shows a bottom view of a nozzle device 810 with an adjustable configuration according to some embodiments. The nozzle device 810 may be... Figure 1A One of the nozzle devices 110. The nozzle device 810 may include a nozzle 820 through which material can be supplied to a chamber (e.g., Figure 1AThe nozzle 820 is located in chamber 102. The direction of the nozzle 820 is adjustable. For example, the nozzle 820 may include a ball joint structure, similar to... Figure 6A and Figure 6B The nozzle 620 is shown. The nozzle assembly 810 may further include a nozzle control device 830, which may include a current source 822 and a shaped metal alloy wire 832. Each current source 822 is used to supply current to the shaped metal alloy wire 832. The shaped metal alloy wire 832 is used to deform in response to the current. For example, the shaped metal alloy wire 832 can be used to extend, contract, or bend when current is supplied. In some embodiments, the amount of deformation of the shaped metal alloy wire 832 may be a function of the current. The shaped metal alloy wire 832 may be attached to the nozzle 820, and the deformation of the shaped metal alloy wire 832 may adjust the direction of the nozzle 820. Therefore, the direction of the nozzle 820 can be controlled by adjusting the current supplied to the shaped metal alloy wire 832. For example, as Figure 8 As shown, nozzle 820 can be configured to have its direction adjustable in the two degrees of freedom indicated by arrow 818. In some embodiments, current source 822 can be controlled by a control device (e.g., Figure 1A The control device 150 controls the direction of the nozzle 820 to improve the uniformity of the material supplied to the chamber and dispersed on the wafer via the nozzle 820.

[0176] Figure 9 The figure shows a bottom view of a nozzle device 910 with an adjustable configuration according to some embodiments. The nozzle device 910 may be... Figure 1A One of the nozzle devices 110. The nozzle device 910 may include a nozzle 920 through which material can be supplied to a chamber (e.g., Figure 1A The nozzle 920 is located in chamber 102. The direction of the nozzle 920 is adjustable. For example, the nozzle 920 may include a ball joint structure, similar to... Figure 6A and Figure 6B The nozzle 620 is shown. The nozzle assembly 910 may further include a nozzle control device 930, which may include temperature controllers 922X and 922Y and bimetallic strips 932X and 932Y. The temperature controllers 922X and 922Y are used to control the temperature of the bimetallic strips 932X and 932Y, respectively. The bimetallic strips 932X and 932Y are configured to deform in response to their temperature. For example, the bimetallic strip 932X may be configured to extend or retract along the X direction when its temperature rises or falls. Similarly, the bimetallic strip 932Y may be configured to extend or retract along the Y direction when its temperature rises or falls. The bimetallic strips 932X and 932Y may be attached to the nozzle 920, and the deformation of the bimetallic strips 932X and 932Y can adjust the direction of the nozzle 920. Therefore, the direction of the nozzle 920 can be adjusted by controlling the temperature of the bimetallic strips 932X and 932Y. Figure 9As shown, nozzle 920 can be configured to have an adjustable orientation in two degrees of freedom (e.g., the X and Y directions). In some embodiments, temperature controllers 922X and 922Y can be controlled by a control device (e.g., Figure 1A The control device 150 controls the direction of the nozzle 920 to improve the uniformity of the material supplied to the chamber and dispersed on the wafer via the nozzle 920.

[0177] Figure 10 The illustration shows a flowchart of an example method 1000 for performing a semiconductor manufacturing process using a nozzle device, according to some embodiments. For ease of explanation, see reference to... Figure 1A System 100 is used to describe Figure 10 The operation shown. Although the operation of method 1000 can be performed by... Figure 10 The operations of method 1000 are performed in the order shown, but it should be noted that, depending on the specific application, the operations of method 1000 may be performed in a different order, and some of the operations may not be performed. Therefore, it should be understood that additional operations may be performed before, during, and after method 1000, and these additional processes may only be briefly described herein.

[0178] refer to Figure 10 In operation 1010, the wafer is loaded into the processing chamber. For example, as shown in reference... Figure 1A The wafer 108 may be placed and / or fixed on a wafer holder 104 in a chamber 102. The wafer 108 may be placed in a horizontal or inclined position, wherein the top surface of the wafer 108 is exposed to a nozzle 120 on a nozzle 106 disposed on the wafer holder 104.

[0179] refer to Figure 10 In operation 1015, the configuration of the nozzles in the processing chamber can be set. For example, as shown in reference... Figure 1A The control device 150 can send commands to the nozzle control device 130 to configure the nozzle 120. The configuration of each component of the nozzle 120 can be set, such as the nozzle direction, the size of the channel in the nozzle, and / or the flow rate of material through the nozzle. In some embodiments, the configuration of the nozzle 120 can be set according to a predetermined profile. In some embodiments, all configurations of the nozzle 120 can be set uniformly. In some embodiments, different configurations of the nozzles 120 can be set differently depending on the specific requirements of the semiconductor manufacturing process.

[0180] refer to Figure 10 In operation 1020, material can be supplied via nozzles into the processing chamber and dispersed on the wafer. For example, as referenced... Figure 1AThe material supply device 152 may receive commands from the control device 150 to select materials stored in the material supply device 152 and supply the materials to the nozzle 120 via the material supply channel 154. The materials are further dispersed on the wafer 108 through the nozzle 120. In some embodiments, the configuration of the nozzle 120 may affect the uniformity of the materials dispersed on the wafer 108. In some embodiments, other conditions of the nozzle 120, such as the deposition / accumulation of materials in the nozzle 120, may affect the uniformity of the layers of materials dispersed on the wafer 108.

[0181] refer to Figure 10 In operation 1025, the thickness profile of the material dispersed on the wafer can be measured. For example, as shown in reference... Figure 1A The analyzer device 158 may receive commands from the control device 150 to perform measurements of the thickness profile of the material dispersed on the wafer 108. The thickness profile may reflect the uniformity of the material dispersed on the wafer 108. In some embodiments, the analyzer device 158 may scan a portion or all of the top surface of the wafer 108 to measure the thickness profile. In some embodiments, the analyzer device 158 may sample discrete locations on the top surface of the wafer 108 to measure the thickness profile. In some embodiments, the analyzer device 158 may collect data about the thickness profile and send it to the control device 150 for further processing.

[0182] refer to Figure 10 In operation 1030, the nozzle configuration can be adjusted based on a comparison between the thickness profile and a reference. For example, if the reference... Figure 1A Upon receiving data regarding the thickness profile, the control device 150 can compare the thickness profile with a reference profile. For example, the control device 150 can calculate the difference between the thickness profile and the reference profile. Based on this comparison, the control device 150 can perform calculations or simulations to determine a scheme for adjusting some or all of the configurations of the nozzles 120 to improve the uniformity of the material dispersed on the wafer 108. According to this scheme, the control device 150 can send a command to the nozzle control device 130 to adjust the configuration of the nozzles 120. In some embodiments, the reference profile may be a reference thickness profile regarding the uniformity of the material layers on the wafer, predetermined based on quality control requirements.

[0183] refer to Figure 10In operation 1035, after adjusting the nozzle configuration, a semiconductor manufacturing operation can be performed by dispersing material via the nozzle. In some embodiments, similar to operation 1020, in operation 1035, material can be supplied via the nozzle into a processing chamber and dispersed on a wafer. In some embodiments, operation 1035 may include replacing a wafer (which has been used in operation 1025 to measure thickness profiles) with a new wafer and performing a manufacturing operation on the new wafer by dispersing material on the new wafer. In some embodiments, the semiconductor manufacturing operation may be depositing a layer of material on a wafer or a new wafer. In some embodiments, the semiconductor manufacturing operation may be a cleaning operation to remove contaminants from a wafer, wherein the material is a cleaning solution.

[0184] In some embodiments, after performing operation 1035, method 1000 may be performed by unloading the wafer from the self-processing chamber. In some embodiments, after performing operation 1035, method 1000 may be performed by repeating operations 1025, 1030, and 1035, thereby allowing for the measurement of an updated thickness profile and readjustment of the nozzle configuration to further improve the uniformity of the material dispersed on the wafer. In some embodiments, operations 1025, 1030, and 1035 may be repeated until uniformity reaches a predetermined level determined by quality control requirements. In some embodiments, operations 1025, 1030, and 1035 may be performed simultaneously. For example, when material is dispersed on the wafer, the thickness profile of the material on the wafer is measured, compared with a reference profile, and the nozzle configuration is adjusted accordingly in real time.

[0185] Figure 11A The illustration shows the configuration of nozzle 1120 on nozzle 1106 according to some embodiments. Figure 11B The illustrations are based on some embodiments via, for example Figure 11A The reference profile 1195 shows the material dispersed on the wafer 1108 by the nozzle 1120. Figure 11C The illustrations are based on some embodiments via, for example Figure 11A The nozzle 1120 shown disperses the thickness profile 1190 of the material on the wafer 1108.

[0186] refer to Figure 11ABased on six-fold rotational symmetry, the nozzle 1106 is divided into multiple nozzle segments 1140, 1142, 1144, 1146, 1148, and 1150. The nozzles 1120 within each nozzle segment have substantially the same configuration. The nozzles 1120 between different nozzle segments have different configurations. For example, the flow rates of the nozzles 1120 in nozzle segments 1140, 1142, 1144, 1146, 1148, and 1150 can be “x” sccm, “x-3” sccm, “x-6” sccm, “x-9” sccm, “x-12” sccm, and “x-15” sccm, respectively, where “x” is a value greater than 15. Figure 11A The configuration of nozzle 1120 shown can be used to calibrate nozzle 1120. Those skilled in the art will understand that, depending on the specific calibration requirements, nozzle 1106 can be divided into multiple nozzle segments in different ways, and the configuration of nozzles 1120 in different nozzle segments can be set in different ways.

[0187] refer to Figure 11B ,according to Figure 11A The configuration of the nozzle 1120 shown, with reference profile 1195, may represent a predetermined profile indicating the uniformity of the material dispersed on the wafer 1108 when the nozzle 1120 functions as intended. Figure 11A Corresponding to the different nozzle segments 1140, 1142, 1144, 1146, 1148, and 1150 shown, wafer 1108 can be divided into different wafer segments 1180, 1182, 1184, 1186, 1188, and 1189. The reference profile 1195 in each wafer segment reflects the configuration differences of nozzle 1120 in different nozzle segments. For example, the reference profile 1195 within each wafer segment can be substantially uniform, and the reference profile 1195 in different wafer segments can be different.

[0188] refer to Figure 11C The thickness profile 1190 can be analyzed by an analyzer (e.g., Figure 1A The analyzer device 158 in the middle is used to measure, such as Figure 10 The operation described in 1025 is shown. (And...) Figure 11AThe different nozzle segments 1140, 1142, 1144, 1146, 1148, and 1150 shown correspond to wafer 1108, which can be divided into different wafer segments 1160, 1162, 1164, 1166 (including wafer sub-segments 1166A and 1166B), 1168, and 1170. The thickness profile 1190 in different wafer segments reflects the configuration differences of nozzle 1120 in different nozzle segments. For example, the thickness profile 1190 within each wafer segment can be substantially uniform, and the thickness profile 1190 in different wafer segments can be different. Due to factors such as obstruction from material accumulation in the nozzle, some nozzles may not function properly. Figure 11C As shown, thickness profile 1190 indicates that the thicknesses in wafer sub-segments 1166A and 1166B are measured differently. For example, the thickness in wafer sub-segment 1166A is less than the thickness in wafer sub-segment 1166B. In some embodiments, such as Figure 10 As shown in operation 1030, the thickness profile 1190 can be compared with... Figure 11B The reference profile 1195 is compared to determine the configuration scheme of the nozzle 1120, thereby improving the uniformity of the material layer dispersed on wafer 1108 or a new wafer. Figure 11A and Figure 11C As shown, nozzle segment 1146 can be divided into nozzle sub-segments 1146A and 1146B, corresponding to wafer sub-segments 1166A and 1166B, respectively. For example... Figure 10 As shown, based on a comparison of thickness profile 1190 and reference profile 1195, the nozzles in nozzle segments 1146A and 1146B can be adjusted differently, as described in operation 1030. For example, if the thickness in wafer segment 1166A in thickness profile 1190 is less than the thickness in wafer segment 1186 in reference profile 1195, and / or if the thickness in wafer segment 1166B in thickness profile 1190 is greater than the thickness in wafer segment 1186 in reference profile 1195, then the flow rate of the nozzle in nozzle segment 1146A can be increased to a higher level than the flow rate of the nozzle in nozzle segment 1146B, thereby compensating for the thickness difference between wafer segments 1166A and 1166B.

[0189] Figure 12 This is a block diagram of example components of a computer system 1200 according to some embodiments. For example, one or more computer systems 1200 may be used to implement any of the embodiments described herein, as well as combinations and sub-combinations thereof. In some embodiments, one or more computer systems 1200 may be used to implement, for example... Figure 10 The method 1000 shown is used to operate as follows: Figure 1AThe system 100 is shown. For example, the computer system 1200 can be used to operate the control device 150, the material supply device 152, the analyzer device 158, and / or the nozzle device 110, such as... Figure 1A As shown. The computer system 1200 may include one or more processors (also known as central processing units, or CPUs), such as processor 1204. Processor 1204 may be connected to communication infrastructure 1206.

[0190] The computer system 1200 may also include a user input / output interface 1202, such as a monitor, keyboard, and indicator devices, which can communicate with the communication infrastructure 1206 via the user input / output device 1203.

[0191] One or more of the processors 1204 may be graphics processing units (GPUs). In an embodiment, the GPU may be a processor, which is a dedicated electronic circuit designed to process mathematically intensive applications. The GPU may have a parallel architecture, which is efficient for parallel processing of large blocks of mathematically intensive data common to computer graphics applications, images, and videos.

[0192] Computer system 1200 may also include main memory or primary memory 1208, such as random access memory (RAM). Main memory 1208 may include one or more levels of cache memory. Main memory 1208 may store control logic (e.g., computer software) and / or data therein. In some embodiments, main memory 1208 may include optical logic for self-analyzers, such as... Figure 1A The optical measurements obtained by the analyzer device 158 shown are analyzed.

[0193] The computer system 1200 may also include one or more auxiliary storage devices or memories 1210. The auxiliary memory 1210 may include, for example, a hard disk drive 1212 and / or a removable storage drive 1214. In some embodiments, the auxiliary memory 1208 may be used to store data, such as data collected by the analyzer device 158 regarding the thickness profile of the material dispersed on the wafer 108, such as... Figure 1A As shown, and / or as a reference data regarding a scheme for comparing with the thickness profile to determine the configuration of the adjustment nozzle 120.

[0194] The removable storage drive 1214 can interact with the removable storage unit 1218. The removable storage unit 1218 may include a computer-usable or readable storage device on which computer software (control logic) and / or data are stored. The removable storage unit 1218 may be a program cartridge and cartridge interface (such as that found in video game devices), a removable memory chip (such as EPROM or PROM) and associated socket, a memory stick and USB port, a memory card and associated memory card slot, and / or any other removable storage unit and associated interface. The removable storage drive 1214 can read from and / or write to the removable storage unit 1218.

[0195] Auxiliary memory 1210 may include other mechanisms, devices, components, media, or other methods for allowing computer programs and / or other instructions and / or data to be accessed by computer system 1200. Such mechanisms, devices, components, media, or other methods may include, for example, removable storage unit 1222 and interface 1220. Examples of removable storage unit 1222 and interface 1220 may include program cartridges and cartridge interfaces (such as those found in video game devices), removable memory chips (such as EPROM or PROM) and associated sockets, memory sticks and USB ports, memory cards and associated memory card slots, and / or any other removable storage unit and associated interface.

[0196] Computer system 1200 may further include a communication or network interface 1224. Communication interface 1224 enables computer system 1200 to communicate and interact with any combination of external devices, external networks, and external entities (individually and collectively referred to by reference numeral 1228). For example, communication interface 1224 may allow computer system 1200 to communicate with external or remote device 1228 via communication path 1226, which may be wired and / or wireless (or a combination thereof) and may include any combination of LAN, WAN, and the Internet. Control logic and / or data may be transmitted to and from computer system 1200 via communication path 1226. In some embodiments, computer system 1200 may be coupled to a conduit via connectors and optical and electrical connections at communication interface 1224, including fiber optic cables and wires, pins, and / or components.

[0197] The computer system 1200 may also be any of the following: a personal digital assistant (PDA), a desktop workstation, a laptop or notebook computer, a small laptop, a tablet computer, a smartphone, a smartwatch or other wearable device, an appliance, a part of the Internet of Things, and / or an embedded system, to name a few non-limiting examples, or any combination thereof.

[0198] Computer system 1200 may be a client or server that accesses or hosts any application and / or data via any delivery mode, including but not limited to remote or distributed cloud computing solutions; regional or on-premises software (“on-premises” cloud-based solutions); “as-a-service” models (e.g., content as a service (CaaS), digital content as a service (DCaaS), software as a service (SaaS), managed software as a service (MSaaS), platform as a service (PaaS), desktop as a service (DaaS), framework as a service (FaaS), backend as a service (BaaS), mobile backend as a service (MBaaS), and infrastructure as a service (IaaS)); and / or hybrid models that include any combination of the foregoing examples or other services or delivery modes.

[0199] Any applicable data structures, file formats, and structure descriptions in the computer system 1200 may be derived from standards, including but not limited to JavaScript Object Notation (JSON), Extensible Markup Language (XML), Yet Another Markup Language (YAML), Extensible Hypertext Markup Language (XHTML), Wireless Markup Language (WML), packets, XML User Interface Language (XUL), or any other functionally similar representation, alone or in combination. Alternatively, proprietary data structures, formats, or structure descriptions may be used, either alone or in combination with known or open standards.

[0200] In some embodiments, a tangible, non-transitory device or article of manufacture, including a tangible, non-transitory computer-usable or readable medium on which control logic (software) is stored, may also be referred to herein as a computer program product or program storage device. This includes, but is not limited to, computer system 1200, main memory 1208, secondary memory 1210, and removable storage units 1218 and 1222, as well as tangible articles of manufacture embodying any combination thereof. When such control logic is executed by one or more data processing devices (such as computer system 1200), such data processing devices can be made to operate as described herein.

[0201] This disclosure provides example apparatus and methods for semiconductor manufacturing processes using an adjustable nozzle arrangement. The apparatus includes a wafer holder for holding a wafer, a nozzle disposed on the wafer for supplying material to the wafer, and a nozzle control device for adjusting the nozzle configuration to improve the uniformity of a layer of material disposed on the wafer. The method includes loading a wafer into a chamber, feeding material into the chamber via the nozzle, measuring the thickness profile of a layer of material disposed on the wafer, and adjusting the nozzle configuration based on a comparison between the thickness profile and a reference. In some embodiments, adjusting the nozzle configuration can improve the uniformity of a layer of material disposed on the wafer. In some embodiments, adjusting the nozzle configuration can effectively address problems caused by material deposition, accumulation, or condensation in the nozzle, and can also reduce tooling maintenance time and effort in semiconductor manufacturing processes.

[0202] In some embodiments, a semiconductor manufacturing apparatus includes a wafer holder for holding a wafer and a nozzle disposed on the wafer holder. The nozzle includes an aperture for providing material to the wafer, a blocking device disposed at the aperture for adjusting the size of the aperture, and an actuator for adjusting the position of the blocking device via the aperture. According to some embodiments of the present disclosure, the blocking device is further configured to: increase the size of the aperture in response to initial material flow through the aperture; and decrease the size of the aperture during a predetermined time period associated with the material flow through the aperture. According to some embodiments of the present disclosure, a width of the aperture is adjustable between about 0.2 mm and about 1.5 mm. According to some embodiments of the present disclosure, the blocking device has a conical shape. According to some embodiments of the present disclosure, the actuator is further configured to retract the blocking device to reduce the size of the aperture. According to some embodiments of the present disclosure, the actuator is further configured to retract the blocking device over a duration of about 4 hours. According to some embodiments of this disclosure, the actuator includes: a rod connected to the blocking device; and a spring connected to the rod and used to retract the blocking device. According to some embodiments of this disclosure, the nozzle is used to cause the material to flow at a flow rate between about 10,000 sccm and about 15,000 sccm.

[0203] In some embodiments, a semiconductor manufacturing apparatus includes a wafer holder for holding a wafer, a nozzle on the wafer holder, a nozzle on the nozzle, and an actuator. The nozzle is used to supply material to the wafer via a channel in the nozzle and control the flow rate of the material. The actuator is used to adjust the channel to improve the uniformity of the material disposed on the wafer. According to some embodiments of this disclosure, the nozzle includes a plurality of arms for forming the channel. According to some embodiments of this disclosure, the nozzle further includes a rotating sleeve coupled to a plurality of threads on the plurality of arms, wherein the rotating sleeve is used to control a dimension of the channel to control the flow rate of the material. According to some embodiments of this disclosure, the actuator is used to rotate the rotating sleeve. According to some embodiments of this disclosure, the actuator is further used to control a vertical position of one or more of the plurality of arms to adjust a dispersion direction of the material. According to some embodiments of this disclosure, the actuator is further used to adjust the channel based on calibration data associated with the uniformity of the material disposed on the wafer. According to some embodiments of this disclosure, the actuator includes an electric actuator, a hydraulic actuator, a pneumatic actuator, a magnetic actuator, a piezoelectric actuator, a shape memory alloy actuator, a thermal actuator, or a combination thereof. According to some embodiments of this disclosure, a semiconductor manufacturing apparatus includes: a wafer holder; a nozzle on the wafer holder; a nozzle on the nozzle and having a channel; and an actuator located around the channel.

[0204] In some embodiments, a method of a semiconductor manufacturing apparatus includes loading a wafer into a chamber, feeding material into the chamber via a nozzle, measuring the thickness profile of the material disposed on the wafer, and adjusting the opening of the nozzle based on the thickness profile. According to some embodiments of the present disclosure, adjusting the opening of the nozzle includes adjusting an orientation of the opening. According to some embodiments of the present disclosure, adjusting the opening of the nozzle includes adjusting a size of the opening. According to some embodiments of the present disclosure, adjusting the opening of the nozzle includes adjusting the opening of the nozzle based on a difference between the thickness profile and a predetermined reference profile. According to some embodiments of the present disclosure, the method further includes: feeding the material into the chamber via another nozzle; and adjusting an opening of the other nozzle based on a uniformity of the thickness profile, wherein the flow rate of the material via the first nozzle is different from the flow rate via the second nozzle. In some embodiments, a semiconductor manufacturing apparatus includes: a wafer holder; a nozzle disposed on the wafer holder, wherein the nozzle includes: a tube having an orifice; a blocking device disposed at the orifice; and an actuator located inside the tube and connected to the blocking device.

[0205] The foregoing outlines the features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art will understand that this disclosure can be readily used as a basis for designing or modifying other processes and structures for implementing the embodiments introduced herein and / or achieving the same objectives and / or advantages. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that such equivalent constructions can be modified, substituted, and replaced herein without departing from the spirit and scope of this disclosure.

Claims

1. A semiconductor manufacturing apparatus, characterized in that, Include: A wafer holder; A nozzle is disposed on the wafer holder, wherein the nozzle comprises: One opening; and A blocking device is provided at the orifice; and An actuator is connected to the blocking device.

2. The semiconductor manufacturing equipment as described in claim 1, characterized in that, The orifice has an adjustable width between 0.2 mm and 1.5 mm.

3. The semiconductor manufacturing equipment as described in claim 1, characterized in that, The blocking device has a conical shape.

4. The semiconductor manufacturing equipment as described in claim 1, characterized in that, The actuator includes: A rod, connected to the blocking device; and A spring is connected to the rod.

5. A semiconductor manufacturing apparatus, characterized in that, Include: A wafer holder; A nozzle is placed on the wafer holder; A nozzle, on the nozzle head, having a channel; and An actuator is located around the channel.

6. The semiconductor manufacturing equipment as described in claim 5, characterized in that, The nozzle consists of multiple arms.

7. The semiconductor manufacturing equipment as described in claim 6, characterized in that, The nozzle further includes a rotating sleeve coupled to multiple threads on the plurality of arms.

8. The semiconductor manufacturing equipment as described in claim 7, characterized in that, The actuator is connected to the rotating sleeve.

9. The semiconductor manufacturing equipment as described in claim 5, characterized in that, The actuator includes an electric actuator, a hydraulic actuator, a pneumatic actuator, a magnetic actuator, a piezoelectric actuator, a shape memory alloy actuator, a thermal actuator, or a combination thereof.

10. A semiconductor manufacturing apparatus, characterized in that, Include: A wafer holder; A nozzle is disposed on the wafer holder, wherein the nozzle comprises: A pipe having an opening; and A blocking device is provided at the orifice; and An actuator is located inside the tube and connected to the blocking device.

Images