Detection light source mechanism, detection device and detection equipment for multiple defects of silicon wafer

Abstract

The utility model provides a detection light source mechanism, a detection device and detection equipment for multiple defects of a silicon wafer. The detection light source mechanism comprises a box body, a first illumination assembly and a second illumination assembly, an opening is formed in one side of the box body, and a light hole is formed in the box body; the first lighting assembly comprises a first lighting part and a first light uniformizing part, the first lighting part comprises at least two first light sources, and the first light uniformizing part covers the opening of the box body; the second lighting assembly comprises a second lighting part and a second light uniformizing part, the second lighting part comprises n second light sources different from the first light sources in wavelength, and the second light uniformizing part comprises n second light uniformizing plates covering the light outlet ends of the n second light sources in a one-to-one correspondence mode. According to the detection light source mechanism for the multiple defects of the silicon wafer, the light paths of the two light sources are integrated, so that the two light sources do not interfere with each other, the two light sources can be lightened at the same time, detection of the multiple defects of the silicon wafer on a single detection station is realized, the number of the detection stations is reduced, and the detection efficiency is improved.

Description

Technical Field

[0001] This application relates to the technical field of silicon wafer defect detection, and more specifically, to a detection light source mechanism, detection device, and detection equipment for multiple defects in silicon wafers. Background Technology

[0002] With the rapid development of the photovoltaic industry, silicon wafers, as the basic material for manufacturing photovoltaic cells, directly affect the performance and lifespan of the final cells. In the production process from silicon wafers to photovoltaic cells, defect detection is one of the key steps to ensure product quality. During the production process, silicon wafers may develop various types of defects due to various reasons, including surface contamination and voids. If these defects are not detected and addressed in a timely manner, they will seriously affect the conversion efficiency and reliability of the cells.

[0003] To effectively detect defects in silicon wafers, most production lines currently employ multi-station inspection. At different inspection stations, independent light sources and cameras are used to identify specific types of defects.

[0004] While existing multi-station defect detection technologies can achieve multi-defect detection of silicon wafers to a certain extent, they have shortcomings in terms of detection efficiency and cost control because they perform different defect detections at multiple detection stations, and each detection station needs to be equipped with an independent detection camera. Utility Model Content

[0005] To address the aforementioned technical problems, this application provides a detection light source mechanism, detection device, and detection equipment for detecting multiple defects in silicon wafers, which adopts the following technical solution:

[0006] This application proposes a detection light source mechanism for multiple defects in silicon wafers, which includes:

[0007] The box has an opening on one side, and a light-transmitting hole extending in a first direction is provided on the box wall opposite to the opening.

[0008] The first lighting assembly includes a first lighting section and a first light-diffusing section. The first lighting section includes at least two first light sources, each of which is a line light source arranged along a first direction. Each first light source is installed inside the housing. The first light-diffusing section covers the opening of the housing, so that the light from each first light source can be uniformly irradiated onto the target illumination plane after being processed by the first light-diffusing section.

[0009] The second lighting assembly comprises a second lighting part and a second light homogenizing part; the second lighting part comprises n second light sources, n is greater than or equal to 1; each second light source is a linear light source arranged along the first direction; the second light source is installed inside or outside the box; the second light homogenizing part comprises n second light homogenizing plates, which correspondingly cover the light emitting ends of the n second light sources; the light emitting direction of each second light source forms a non-zero angle with the normal direction of the target irradiation plane, and forms a light band extending along the first direction on the target irradiation plane;

[0010] The wavelengths of the first light source and the second light source are different, the first light source is used to provide illumination for the dirt detection of the silicon wafer, and the second light source is used to provide illumination for the hole and silicon drop detection of the silicon wafer.

[0011] The silicon wafer multi-defect detection light source mechanism of the present application integrates the first lighting assembly and the second lighting assembly to realize the simultaneous detection of the dirt, hole and silicon drop defects on the surface of the silicon wafer. The first lighting assembly adopts multiple first light sources and performs light homogenizing treatment through the first light homogenizing part to ensure that the light is uniformly irradiated on the surface of the silicon wafer, which can effectively capture the dirt defects. The second lighting assembly cooperates with the second light source and the second light homogenizing part to form a light band on the surface of the silicon wafer, which can obtain clear feature maps for the hole and silicon drop defects, so that the hole and silicon drop defects are more easily detected. The wavelengths of the first light source and the second light source are different, which avoids the interference between the light sources and improves the detection efficiency. The overall structure is compact and easy to integrate into the existing silicon wafer sorting machine, which significantly improves the automation level and detection efficiency of the production line.

[0012] Optionally, each first light source adopts a blue light source with a wavelength range of 450-495 nm, and / or each second light source adopts a green light source with a wavelength range of 500-570 nm.

[0013] The above provides the wavelength selection of the first light source and the second light source based on the optical properties of the defects on the surface of the silicon wafer. The blue light source helps to extract the dirt features and can clearly capture the details of the dirt. The green light source helps to extract the hole and silicon drop features and can effectively detect the existence of the hole and silicon drop defects. Through this wavelength combination, the detection light source can simultaneously meet the detection requirements of dirt, hole and silicon drop, avoiding the complexity and inefficiency of the traditional multi-station detection method. In addition, the wavelength ranges of the blue and green light sources are optimized to reduce the interference between the light sources to the greatest extent, ensuring the accuracy and consistency of the detection results. This wavelength selection also improves the stability and service life of the light source and reduces the maintenance cost of the silicon wafer multi-defect detection light source mechanism.

[0014] Optionally, the light emitting direction of each first light source forms an angle of 0°-90° with the normal direction of the target irradiation plane, and the light emitting direction of each first light source is different, and / or the light emitting direction of each second light source forms an angle of 20°-80° with the normal direction of the target irradiation plane.

[0015] The multi-angle irradiation of the first light source can better capture the dirt defects, especially the fine dirt that only appears at a specific angle, after the light homogenization of the first light homogenization part. The inclined irradiation of the second light source can form a light band extending along the first direction on the surface of the silicon wafer to enhance the contrast of the hole and silicon drop defects.

[0016] Optionally, when the second light source is installed inside the box, the light emitting path of each second light source intersects the first light homogenization part and forms a plurality of overlapping positions on the first light homogenization part, and a light transmission structure is arranged at each overlapping position, and the light transmission structure is configured to allow the second light source to pass through and limit the first light source to pass through.

[0017] When the second light source is installed outside the box, each second light source is installed on the light source mounting rack located outside the box.

[0018] The above provides the installation mode of the second light source: inside the box or outside the box. When the second light source is installed inside the box, the light emitting path of the second light source intersects the first light homogenization part and forms a light transmission structure on the first light homogenization part, and the light transmission structure allows the light of the second light source to pass through while limiting the light of the first light source, so as to avoid the second light source processed by the second light homogenization part from being disturbed by the first light homogenization part. When the first light source is not processed by the first light homogenization part, it directly irradiates on the silicon wafer to be tested from the light transmission structure, thereby interfering with the detection of multiple defects on the silicon wafer. When the second light source is installed outside the box, it is fixed through the light source mounting rack, which simplifies the structure inside the box and improves the flexibility and maintainability of the silicon wafer multiple defect detection light source mechanism. This dual installation mode can be flexibly adjusted according to actual production needs, and is suitable for different detection environments and process requirements.

[0019] Optionally, when the second light source is installed inside the box, the light transmission structure is a slit extending along the first direction opened on the first light homogenization part or a transmission area extending along the first direction arranged on the first light homogenization part.

[0020] It should be noted that the transmission area is a region that does not process the second light source and can ensure that the second light source transmits from the region.

[0021] The above provides specific forms of the light transmission structure, including a slit opened on the first light homogenization part or a transmission area arranged on the first light homogenization part. The design of the slit or the transmission area can also be adjusted according to actual needs to adapt to light sources of different wavelengths and angles, thereby improving the flexibility and adaptability of the silicon wafer multiple defect detection light source mechanism.

[0022] Optionally, the first light uniformity component comprises one first light uniformity plate, or the first light uniformity component comprises m third light uniformity plates, m≥2;

[0023] When the first light uniformity component is one first light uniformity plate, the first light uniformity plate is configured to cover the propagation light paths of all the first light sources alone to perform light uniformity processing on the light emitted by each first light source, so that the light of each first light source is uniformly irradiated to the target irradiation plane;

[0024] Alternatively,

[0025] When the first light uniformity component is m third light uniformity plates arranged side by side, the m third light uniformity plates are configured to cover the propagation light paths of all the first light sources in combination to perform light uniformity processing on the light emitted by each first light source, so that the light of each first light source is uniformly irradiated to the target irradiation plane.

[0026] The above provides two forms of the first light uniformity component: a single first light uniformity plate or multiple third light uniformity plates arranged side by side. The single or multiple third light uniformity plates arranged side by side can ensure that the light of all the first light sources is uniformly irradiated to the surface of the silicon wafer.

[0027] Optionally, when n=1, the light emitted by the single second light source is configured to form a light band extending in the first direction alone on the target irradiation plane;

[0028] Alternatively,

[0029] When n≥2, the light emitted by the n second light sources is configured to converge to form a light band extending in the first direction on the target irradiation plane.

[0030] The above provides two configuration modes of the second light source: a single light source or multiple light sources. The single second light source can independently form a clear light band on the surface of the silicon wafer, simplifying the detection process and reducing the cost of the equipment. Multiple second light sources can converge to form a light band on the surface of the silicon wafer, improving the brightness of the light band to improve the accuracy of hole and silicon drop detection. This design can be flexibly adjusted according to actual needs, adapting to different detection environments and process requirements.

[0031] The application also provides a silicon wafer multi-defect detection device, which comprises a detection mechanism and the aforementioned silicon wafer multi-defect detection light source mechanism, wherein:

[0032] The first illumination assembly in the silicon wafer multi-defect detection light source mechanism is used for uniformly irradiating the to-be-detected surface of the silicon wafer, and the second illumination assembly in the silicon wafer multi-defect detection light source mechanism is used for forming a light band extending in the first direction on the to-be-detected surface of the silicon wafer;

[0033] The inspection mechanism includes a camera and a processor. The camera is configured to acquire images of the surface to be inspected on a silicon wafer illuminated by a multi-defect inspection light source mechanism. The camera's imaging end, the light-transmitting aperture, and the light strip on the surface to be inspected are sequentially located on the same vertical plane. The light strip is reflected by the surface to be inspected and passes through the light-transmitting aperture into the camera's imaging end. The vertical plane is perpendicular to the box wall on the box body with the light-transmitting aperture. The processor is communicatively connected to the camera and is configured to receive the images acquired by the camera and detect defects on the silicon wafer based on the images acquired by the camera.

[0034] This application discloses a silicon wafer multi-defect inspection device that integrates an inspection mechanism and a silicon wafer multi-defect inspection light source mechanism. The inspection mechanism, through a camera and processor, can acquire and analyze images of the silicon wafer surface in real time, quickly identifying contaminants, voids, and silicon fallout defects. This design not only improves the automation level of inspection but also reduces manual intervention and lowers inspection costs. A camera works in conjunction with a first and second light source in the silicon wafer multi-defect inspection light source mechanism. The first light source provides illumination for contaminant detection on the silicon wafer, while the second light source provides illumination for void and silicon fallout detection. The light from the first and second light sources is reflected by the silicon wafer surface under test and passes through a light-transmitting hole to enter the camera's imaging end. The camera is used to acquire images of the silicon wafer surface under test illuminated by the first and second light sources. Using the silicon wafer multi-defect inspection light source mechanism, only one camera is needed to complete the inspection of one surface of the silicon wafer at a single inspection station, reducing the size and cost of the inspection equipment and improving its inspection efficiency.

[0035] Optionally, the first light-diffusing section is arranged parallel to the test surface of the silicon wafer, and the height difference between the first light-diffusing section and the test surface of the silicon wafer is 25-80 mm, and / or, the height difference between each second light-diffusing plate in the second light-diffusing section and the test surface of the silicon wafer is 10-60 mm.

[0036] The above describes the height differences between the first light-diffusing section and the second light-diffusing plate and the test surface of the silicon wafer, respectively. The height difference between the first light-diffusing section and the test surface of the silicon wafer is 25–80 mm, and the height difference between the second light-diffusing plate and the test surface of the silicon wafer is 10–60 mm. This height design ensures that the light from the first and second light sources illuminates the silicon wafer surface at an optimal distance.

[0037] This application also provides a silicon wafer multi-defect detection device, which includes a conveying device and two of the aforementioned silicon wafer multi-defect detection devices, wherein:

[0038] The conveying device includes at least a first transmission section and a second transmission section arranged at intervals along a second direction to convey silicon wafers along the second direction, which is perpendicular to the first direction.

[0039] The two wafer multi-defect detection devices are staggered along the second direction; one of the wafer multi-defect detection devices is located above the first transmission section or the second transmission section and is used to detect the front surface defects of the wafer; and the other wafer multi-defect detection device is located below the interval between the first transmission section and the second transmission section and is used to detect the back surface defects of the wafer when the wafer moves between the first transmission section and the second transmission section.

[0040] The wafer multi-defect detection device of the present application integrates the conveying device and the two wafer multi-defect detection devices. The conveying device passes through the first transmission section and the second transmission section and can convey the wafer along the second direction, so that the wafer to be detected can move efficiently on the production line. The two wafer multi-defect detection devices are located above and below the transmission section respectively, and can detect the front surface and back surface defects of the wafer at the same time, improving the comprehensiveness and efficiency of detection. This design not only simplifies the detection process, but also reduces the floor area of the equipment and improves the automation level of the production line. In addition, the cooperative work of the two wafer multi-defect detection devices can also ensure that the front and back surface defects of the wafer are identified at the same time, avoiding the limitations of traditional single surface detection.

[0041] Optionally, the interval between the first transmission section and the second transmission section is 30-70 mm.

[0042] The above provides an interval of 30-70 mm between the first transmission section and the second transmission section, which can ensure that the wafer remains stable during transmission and does not fall from the interval between the first transmission section and the second transmission section. In addition, this interval can also ensure that the light band formed by the second light source of the wafer multi-defect detection device located below the transmission section on the back surface of the wafer extends along the first direction within the interval, which helps the camera to stably receive the image at the light band on the back surface of the wafer, improving the detection effect.

[0043] Optionally, the height difference between the first light uniformizing part in the wafer multi-defect detection device located above the first transmission section or the second transmission section and the front surface of the wafer is H1, the height difference between the first light uniformizing part in the wafer multi-defect detection device located below the interval between the first transmission section and the second transmission section and the back surface of the wafer is H2, and H1=H2.

[0044] and / or,

[0045] The height difference between the second light uniformizing plate in the wafer multi-defect detection device located above the first transmission section or the second transmission section and the front surface of the wafer is h1, the height difference between the second light uniformizing plate in the wafer multi-defect detection device located below the interval between the first transmission section and the second transmission section and the back surface of the wafer is h2, and h1=h2.

[0046] The detection height of the first light uniformizing part in the upper silicon wafer multi-defect detection device and the front surface of the silicon wafer is designed to be equal to the detection height of the first light uniformizing part in the lower silicon wafer multi-defect detection device and the back surface of the silicon wafer, which can reduce the situation that the same dirt defect can be detected on the front surface but cannot be detected on the back surface. The detection height of the second light uniformizing part in the upper silicon wafer multi-defect detection device and the front surface of the silicon wafer is designed to be equal to the detection height of the second light uniformizing part in the lower silicon wafer multi-defect detection device and the back surface of the silicon wafer, which can reduce the situation that the same hole and silicon falling defect can be detected on the front surface but cannot be detected on the back surface. In addition, the consistency of the detection height can simplify the debugging and maintenance of the equipment and reduce the operation cost of the equipment.

[0047] Compared with the prior art, the beneficial effects of the technical scheme of the application are:

[0048] The application provides a silicon wafer multi-defect detection light source mechanism, a detection device and a detection equipment. The silicon wafer multi-defect detection light source mechanism integrates two light sources together. The two light sources are different in wavelength and the types of defects they aim at. Among them:

[0049] The light emitted by the first light source is uniformly scattered on the surface of the silicon wafer through the first light uniformizing part. For dirt on the surface of the silicon wafer, better contrast can be provided, so that the dirt defect is more easily detected.

[0050] The light emitted by the second light source forms a light band extending in the first direction on the surface to be detected of the silicon wafer after passing through the corresponding second light uniformizing part. For hole and silicon falling defects, clearer hole and silicon falling feature maps can be provided, so that the hole and silicon falling defects are more easily detected.

[0051] The silicon wafer multi-defect detection light source mechanism integrates the light paths of the two light sources, so that the two light paths do not interfere with each other, and the two light sources can be turned on at the same time. The detection of multiple defects of the silicon wafer on a single detection station is realized, so that the number of detection stations is reduced, the number of cameras required is reduced, and the detection cost is effectively reduced. BRIEF DESCRIPTION OF DRAWINGS

[0052] Figure 1 is a structure schematic diagram of the silicon wafer multi-defect detection light source mechanism in a first perspective provided by an embodiment of the application;

[0053] Figure 2 is Figure 1 a structure schematic diagram of the silicon wafer multi-defect detection light source mechanism in a second perspective shown in the figure;

[0054] Figure 3is a schematic diagram of a stereo structure of a silicon wafer multi-defect detection device provided by an embodiment of the present application.

[0055] Figure 4 is a schematic diagram of a first light homogenizing part 122 provided by an embodiment of the present application.

[0056] Figure 5 is a blue light channel image of a silicon wafer image separated from a silicon wafer multi-defect detection light source mechanism provided by an embodiment of the present application.

[0057] Figure 6 is a green light channel image of the same silicon wafer image as in Figure 5 .

[0058] Figures 1 to 6 includes the following reference signs:

[0059] Silicon wafer multi-defect detection device 100:

[0060] Silicon wafer multi-defect detection light source mechanism 1:

[0061] Box 11, light transmission hole 111.

[0062] First lighting assembly 12, first lighting part 121, first light source 1211, first light homogenizing part 122.

[0063] Second lighting assembly 13, second lighting part 131, second light source 1311, second light homogenizing part 132.

[0064] Light transmission structure 1221.

[0065] Light source mounting rack 14.

[0066] Detection mechanism 2.

[0067] Conveying device 200:

[0068] First transmission section 3, second transmission section 4. DETAILED DESCRIPTION

[0069] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0070] In order to more clearly describe the present application, the defects to be detected by the multi-defect detection light source of the present application are briefly described.

[0071] Dirty defect: dirty defect refers to the phenomenon of pollutants or impurities remaining on the surface or inside of the silicon wafer due to various reasons during the manufacturing process of the silicon wafer. These dirties may include particles, dust, chemical residues, organic matter, metal ions, etc., which can adversely affect the performance of the silicon wafer and subsequent processes.

[0072] Hole defect: hole refers to the existence of small cavities on the surface or inside of the silicon wafer, which is divided into penetrating type (penetrating the silicon wafer) and non-penetrating type (only existing on the surface), mainly caused by impurities in the material, improper process conditions (such as temperature, pressure control inaccuracy) or other factors (such as crystal growth defects).

[0073] Silicon drop defect: silicon drop defect refers to the phenomenon of silicon material falling off the surface of the silicon wafer due to external force, which is mainly caused by external bumping, mechanical stress or improper operation.

[0074] As shown in Figures 1-2 , the present application proposes a kind of detection light source mechanism for silicon wafer multiple defects, which includes:

[0075] Box 11, one side of box 11 is provided with opening, the box wall opposite to opening on box 11 is provided with light transmission hole 111 extending along first direction;

[0076] First lighting assembly 12, first lighting assembly 12 includes first lighting part 121 and first light uniformity part 122;First lighting part 121 includes at least two first light sources 1211, each first light source 1211 is linear light source arranged along first direction (for example Figure 1 X direction) as shown;Each first light source 1211 is installed inside box 11;First light uniformity part 122 covers at the opening of box 11, so that the light of each first light source 1211 can be uniformly irradiated on target irradiation plane after the uniformity treatment of first light uniformity part 122;

[0077] Second lighting assembly 13, second lighting assembly 13 includes second lighting part 131 and second light uniformity part 132;Second lighting part 131 includes n second light sources 1311, n ≥ 1;Each second light source 1311 is linear light source arranged along first direction;Second light source 1311 is installed inside box 11 or outside box 11;Second light uniformity part 132 includes n second light uniformity plates, n second light uniformity plates correspondingly cover the light emitting end of n second light sources 1311;The light emitting direction of each second light source 1311 forms a non-zero angle with the normal direction of target irradiation plane, and forms a light band extending along first direction on target irradiation plane;

[0078] The wavelength of first light source 1211 and second light source 1311 is different, first light source 1211 is used for providing illumination for dirty detection of silicon wafer, and second light source 1311 is used for providing illumination for hole and silicon drop detection of silicon wafer.

[0079] The linear light source represents a light source in a linear shape, and the light emitted by the linear light source is distributed along a line.

[0080] The application provides a silicon wafer multi-defect detection light source mechanism. By integrating the first illumination assembly 12 and the second illumination assembly 13, the silicon wafer surface dirt, hole, and silicon drop defects can be detected simultaneously. The first illumination assembly 12 adopts a plurality of first light sources 1211, and the light is uniformly processed by the first light uniformizing part 122 to form diffuse light from multiple linear light sources, so that the backlight illumination effect of the imaging point is brighter. The design of the first illumination assembly 12 can ensure that the light is uniformly irradiated on the surface of the silicon wafer, and the dirt defects can be effectively captured. The second illumination assembly 13 forms a light band on the surface of the silicon wafer by cooperating the second light source 1311 and the second light uniformizing part 132, which is used for detecting hole defects.

[0081] The wavelengths of the first light source 1211 and the second light source 1311 are different. The light emitted by the first light source 1211 is uniformly scattered on the surface of the silicon wafer by the first light uniformizing part 122. For the dirt on the surface of the silicon wafer, a better contrast can be provided, so that the dirt defects are easier to be detected. The light emitted by the second light source 1311 forms a light band extending in the first direction on the surface of the silicon wafer after passing through the corresponding second light uniformizing part, so that the clear feature map of the hole and silicon drop defects can be obtained, and the hole and silicon drop defects are easier to be detected.

[0082] The silicon wafer multi-defect detection light source mechanism can integrate the light paths of the two light sources, so that the two light sources do not interfere with each other, and the two light sources can be bright at the same time. The detection of multiple defects of the silicon wafer on a single detection station is realized, so that the detection station is reduced, and the detection efficiency is improved. Since at least one camera is required for each detection station, the reduction of the detection station means that the number of cameras required is reduced, which can effectively reduce the detection cost. In addition, the silicon wafer multi-defect detection light source mechanism has a compact structure and can be easily integrated into the existing silicon wafer sorting machine, so that the automation level and detection efficiency of the production line can be improved.

[0083] Optionally, each first light source 1211 is a blue light source with a wavelength range of 450-495 nm, and / or each second light source 1311 is a green light source with a wavelength range of 500-570 nm.

[0084] The silicon wafer multi-defect detection light source mechanism of the present application adopts a blue light source with a wavelength range of 450-495 nm and / or a green light source with a wavelength range of 500-570 nm, which is based on the optical characteristics of the surface defects of the silicon wafer. The wavelength range of the blue light source is 450-495 nm, which helps to extract the characteristics of dirt and can clearly capture the details of the dirt. The wavelength range of the green light source is 500-570 nm, which helps to extract the characteristics of holes and silicon drops and can effectively detect the presence of holes. The light of the green light source can enhance the visibility of these defects, making it easier for the camera to capture them.

[0085] Through this combination of wavelengths, the detection light source can simultaneously meet the detection needs of dirt, holes, and silicon drops, avoiding the complexity and inefficiency of traditional multi-station detection methods. In addition, the wavelength ranges of the blue and green light sources are optimized, which can greatly reduce the interference between the light paths of each light source.

[0086] Optionally, the second light source 1311 includes a plurality of lamp beads arranged uniformly along the first direction, so that the light emitted by the second light source 1311 can be uniformly distributed, thereby forming a clear and uniform light band on the surface of the silicon wafer, improving the detection accuracy and consistency of hole and silicon drop defects.

[0087] Optionally, the first light source 1211 and / or the second light source 1311 adopts an LED light source.

[0088] LED light sources have the advantages of high brightness, low power consumption, and long service life, and are suitable for use in the silicon wafer multi-defect detection light source mechanism of the present application. The wavelength range of the LED light source can be adjusted by selecting different LED chips, ensuring that the wavelength ranges of the first light source 1211 and the second light source 1311 are between 450-495 nm and 500-570 nm, respectively. The driving circuit of the LED light source needs to have high stability and adjustability to ensure that the light source can maintain constant brightness and wavelength during operation. The driving circuit includes a constant current source and a PWM dimming circuit, which can adjust the brightness and working mode of the first light source 1211 and / or the second light source 1311 according to actual needs.

[0089] Optionally, the light emitting direction of each first light source 1211 forms an included angle of 0°-90° with the normal direction of the target irradiation plane, and the light emitting directions of each first light source 1211 are different, and / or the light emitting direction of each second light source 1311 forms an included angle of 20°-80° with the normal direction of the target irradiation plane.

[0090] In the silicon wafer multi-defect detection light source mechanism of the present application, the included angle formed by the light emitting direction of the first light source 1211 and the normal direction of the target irradiation plane can be any value between 0° and 90°, such as 0°, 30°, 45°, 60°, and 90°. Meanwhile, the light emitting directions of the first light sources 1211 are different from each other, and the first light sources 1211 can irradiate at different angles within 0°-90°, so that the light supplement direction is more abundant, and multi-angle irradiation can better capture the dirt defects, especially the fine dirt that only appears at a specific angle.

[0091] The included angle formed by the light emitting direction of the second light source 1311 and the normal direction of the target irradiation plane can be any value between 20° and 80°, such as 20°, 40°, 50°, 60°, and 80°. The inclined irradiation of the second light source 1311 can form a light band extending in the first direction on the surface of the silicon wafer, so as to enhance the contrast of the hole and silicon drop defects. Optionally, all the second light sources 1311 are installed inside the box body 11 (not shown), or all the second light sources 1311 are installed outside the box body 11 (as shown in the figure). Figure 1

[0092] As a first embodiment, when all the second light sources 1311 are installed inside the box body 11: the light emitting paths of the second light sources 1311 intersect the first light homogenizing part 122 respectively, and form a plurality of overlapping positions on the first light homogenizing part 122, and the transparent structure is arranged at each overlapping position, and the transparent structure is configured to allow the second light source 1311 to pass through and limit the first light source 1211 to pass through;

[0093] As a second embodiment, when all the second light sources 1311 are installed outside the box body 11: each second light source 1311 is installed on the light source mounting rack 14 located outside the box body 11. For example, the silicon wafer multi-defect detection light source mechanism includes two second light sources 1311 located outside the box body 11, and the two second light sources 1311 intersect on the target irradiation plane to form a light band extending in the first direction.

[0094] If there is no installation position for the second light source 1311 inside the box body, and it is needed to install the second light source 1311 inside the box body 11, part of the first light sources 1211 inside the box body can be replaced by the second light sources 1311.

[0095] ​The second light source 1311 in the silicon wafer multi-defect detection light source mechanism of the present application is installed inside or outside the box body 11. When the second light source 1311 is installed inside the box body 11, its light path intersects with the first light uniformizing part 122, and a light-transmitting structure is formed on the first light uniformizing part 122, which allows the light of the second light source 1311 to pass through while limiting the light of the first light source 1211, so as to avoid the second light source 1311 processed by the second light uniformizing part 132 from being interfered by the first light uniformizing part 122, and the first light source 1211 directly irradiates on the silicon wafer to be detected from the light-transmitting structure without being processed by the first light uniformizing part 122, thereby interfering with the detection of the multi-defects on the silicon wafer. When the second light source 1311 is installed outside the box body 11, it is fixed by the light source mounting rack 14, which simplifies the structure inside the box body 11 and improves the flexibility and maintainability of the silicon wafer multi-defect detection light source mechanism. This dual installation mode can be flexibly adjusted according to actual production needs and adapt to different detection environments and process requirements.

[0096] Optionally, the first light source 1211 is rotatably installed inside the box body 11, and the second light source 1311 is rotatably installed outside the box body 11. The angle adjustment of the light source can be achieved by mechanical structure, such as a rotating support or an angle adjuster, so as to adjust the light-emitting angle of the light source according to actual needs.

[0097] Optionally, as shown in Figure 4 when the second light source 1311 is installed inside the box body 11, the light-transmitting structure 1221 is a slit extending in the first direction formed on the first light uniformizing part 122 or a transmission area extending in the first direction provided on the first light uniformizing part 122.

[0098] The light-transmitting structure in the silicon wafer multi-defect detection light source mechanism of the present application is a slit formed on the first light uniformizing part 122 or a transmission area. Since the second light source 1311 is a linear light source, the width of the light-transmitting structure can be adjusted to allow the second light source 1311 inside the box body 11 to pass through and prevent the first light source 1211 from passing through the light-transmitting structure without light uniformization, and the width direction of the light-transmitting structure is perpendicular to the length direction of the linear light source. The design of the slit or the transmission area can also be adjusted according to actual needs to adapt to light sources of different wavelengths and angles, thereby improving the flexibility and adaptability of the silicon wafer multi-defect detection light source mechanism.

[0099] Optionally, a heat dissipation member is installed on each first light source 1211 and / or each second light source 1311.

[0100] The first light source 1211 and the second light source 1311 will generate a certain amount of heat during operation, which needs to be dissipated through a heat dissipation member, such as a heat sink, to ensure the stability of the light source under long-time operation.

[0101] Optionally, the first light uniformity part 122 comprises one first light uniformity plate, or the first light uniformity part 122 comprises m third light uniformity plates, m≥2.

[0102] When the first light uniformity part 122 is one first light uniformity plate, the first light uniformity plate is configured to cover the propagation light path of all the first light sources 1211 alone to perform light uniformity processing on the light emitted by each first light source 1211, so that the light of each first light source 1211 is uniformly irradiated to the target irradiation plane. When the first light uniformity part 122 is m third light uniformity plates arranged side by side, the m third light uniformity plates are configured to cover the propagation light path of all the first light sources 1211 in combination to perform light uniformity processing on the light emitted by each first light source 1211, so that the light of each first light source 1211 is uniformly irradiated to the target irradiation plane.

[0103] The first light uniformity part 122 in the silicon wafer multi-defect detection light source mechanism of the present application is a single first light uniformity plate or multiple third light uniformity plates arranged side by side. Both the single first light uniformity plate and the multiple third light uniformity plates arranged side by side can ensure that the light of all the first light sources 1211 is uniformly irradiated to the surface of the silicon wafer. This design can also be flexibly adjusted according to actual needs to adapt to different detection environments and process requirements. The first light uniformity part 122 optimizes the uniformity of the first light sources 1211, and improves the stability and reliability of the detection results.

[0104] Optionally, when n=1, the light emitted by the single second light source 1311 is configured to form a light band extending in the first direction alone on the target irradiation plane (not shown);

[0105] Or,

[0106] When n≥2, the light emitted by the n second light sources 1311 is configured to converge to form a light band extending in the first direction on the target irradiation plane (not shown). Figures 1-2 As shown, there are two second light sources 1311.

[0107] The second light source 1311 in the silicon wafer multi-defect detection light source mechanism of the present application is a single light source or multiple light sources. The single second light source 1311 can independently form a clear light band on the surface of the silicon wafer, simplifying the detection process and reducing equipment costs. Multiple second light sources 1311 can converge to form a light band on the surface of the silicon wafer, improving the brightness of the light band to improve the accuracy of hole and silicon drop detection. This design can be flexibly adjusted according to actual needs to adapt to different detection environments and process requirements.

[0108] As Figure 3 shown, the present application also provides a silicon wafer multi-defect detection device, which comprises a detection mechanism 2 and the aforementioned silicon wafer multi-defect detection light source mechanism 1, wherein:

[0109] The first illumination assembly 12 in the silicon wafer multi-defect detection light source mechanism 1 is used to uniformly irradiate the to-be-detected surface of the silicon wafer, and the second illumination assembly 13 in the silicon wafer multi-defect detection light source mechanism 1 is used to form a light band extending in a first direction on the to-be-detected surface of the silicon wafer.

[0110] The detection mechanism 2 comprises a camera and a processor. The camera is configured to capture an image of the to-be-detected surface of the silicon wafer irradiated by the silicon wafer multi-defect detection light source mechanism 1. The shooting end of the camera, the light transmission hole 111 and the light band on the to-be-detected surface sequentially lie on the same vertical plane. The light band is reflected on the to-be-detected surface and then passes through the light transmission hole 111 to enter the shooting end of the camera. The vertical plane is perpendicular to the box wall of the box body 11 on which the light transmission hole 111 is formed. The processor is in communication connection with the camera. The processor is configured to receive the image captured by the camera and detect the defects of the silicon wafer according to the image captured by the camera.

[0111] The silicon wafer multi-defect detection device of the present application integrates the detection mechanism 2 and the silicon wafer multi-defect detection light source mechanism 1. The detection mechanism 2 can capture and analyze the image of the surface of the silicon wafer in real time through the camera and the processor, and quickly identify the dirt, hole and silicon falling defects. This design not only improves the automation level of detection, but also reduces manual intervention and reduces detection cost. One camera is used to cooperate with the first light source 1211 and the second light source 1311 in the silicon wafer multi-defect detection light source mechanism 1. The first light source 1211 is used to provide illumination for the dirt detection of the silicon wafer, and the second light source 1311 is used to provide illumination for the hole and silicon falling detection of the silicon wafer. The light of the first light source 1211 and the second light source 1311 is reflected on the to-be-detected surface of the silicon wafer and then passes through the light transmission hole 111 to enter the shooting end of the camera. The camera is used to capture the image of the to-be-detected surface of the silicon wafer irradiated by the first light source 1211 and the second light source 1311. The silicon wafer multi-defect detection light source mechanism is used. Only one camera needs to be cooperatively configured to complete the detection of one surface of the silicon wafer at one detection station. The volume of the detection equipment can be reduced, the cost of the detection equipment can be reduced, and the detection efficiency of the detection equipment can be improved.

[0112] Optionally, the first light uniformizing part 122 is arranged in parallel with the to-be-detected surface of the silicon wafer, the height difference between the first light uniformizing part 122 and the to-be-detected surface of the silicon wafer is 25-80 mm, and / or the height difference between each second light uniformizing plate in the second light uniformizing part 132 and the to-be-detected surface of the silicon wafer is 10-60 mm.

[0113] The height difference between the first light uniforming part 122 and the surface of the silicon wafer to be detected is 25-80 mm, and the height difference between the second light uniforming part and the surface of the silicon wafer to be detected is 10-60 mm. Such height design can ensure that the light of the first light source 1211 and the second light source 1311 is irradiated to the surface of the silicon wafer at a preferable distance, thereby improving the visibility and detection accuracy of defects. The height design of the first light uniforming part 122 can ensure that the light is uniformly irradiated to the surface of the silicon wafer, thereby capturing the dirt defects. The height design of the second light uniforming part can enhance the contrast of holes and silicon drops, so that clear light bands are formed on the surface of the silicon wafer, thereby facilitating the capture by the camera.

[0114] As shown in Figure 3 The present application also provides a silicon wafer multi-defect detection device, which comprises a conveying device 200 and two aforementioned silicon wafer multi-defect detection devices 100, wherein:

[0115] The conveying device 200 at least comprises a first transmission section 3 and a second transmission section 4 arranged at intervals along a second direction (for example, the Y direction as shown) to convey the silicon wafer along the second direction, and the second direction is perpendicular to the first direction; Figure 2

[0116] One of the two silicon wafer multi-defect detection devices 100 is located above the first transmission section 3 or the second transmission section 4 to detect the front surface defects of the silicon wafer, and the other silicon wafer multi-defect detection device 100 is located below the interval between the first transmission section 3 and the second transmission section 4 to detect the back surface defects of the silicon wafer when the silicon wafer moves between the first transmission section 3 and the second transmission section 4.

[0117] The silicon wafer multi-defect detection device of the present application integrates the conveying device 200 and the two silicon wafer multi-defect detection devices 100. The conveying device 200 can convey the silicon wafer along the second direction through the first transmission section 3 and the second transmission section 4, so that the silicon wafer to be detected can move efficiently on the production line. The two silicon wafer multi-defect detection devices 100 are located above and below the transmission sections, respectively, to detect the front surface and back surface defects of the silicon wafer simultaneously, thereby improving the comprehensiveness and efficiency of detection. Such design not only simplifies the detection process, but also reduces the floor area of the equipment and improves the automation level of the production line. In addition, the cooperative work of the two silicon wafer multi-defect detection devices 100 can also ensure that the front and back surface defects of the silicon wafer are identified simultaneously, thereby avoiding the limitations of traditional single surface detection.

[0118] Optionally, the interval between the first transmission section 3 and the second transmission section 4 is 30-70 mm.

[0119] ​The interval between the first conveying section 3 and the second conveying section 4 in the wafer multi-defect detection device of the present application is 30-70 mm. This interval design can ensure that the wafer remains stable during the conveying process and will not fall from the interval between the first conveying section 3 and the second conveying section 4. In addition, this interval can also ensure that the light band formed on the back surface of the wafer by the second light source 1311 of the wafer multi-defect detection device 100 located below the conveying section in the first direction is located in the interval, which helps the camera to stably receive the image at the light band on the back surface of the wafer, improving the detection effect.

[0120] Optionally, the height difference between the first light uniformizing part 122 in the wafer multi-defect detection device 100 located above the first conveying section 3 or the second conveying section 4 and the front surface of the wafer is H1, and the height difference between the first light uniformizing part 122 in the wafer multi-defect detection device 100 located below the interval between the first conveying section 3 and the second conveying section 4 and the back surface of the wafer is H2, H1=H2.

[0121] and / or,

[0122] The height difference between the second light uniformizing plate in the wafer multi-defect detection device 100 located above the first conveying section 3 or the second conveying section 4 and the front surface of the wafer is h1, and the height difference between the second light uniformizing plate in the wafer multi-defect detection device 100 located below the interval between the first conveying section 3 and the second conveying section 4 and the back surface of the wafer is h2, h1=h2.

[0123] The detection height of the first light uniformizing part 122 in the wafer multi-defect detection device 100 located above and the front surface of the wafer is designed to be equal to the detection height of the first light uniformizing part 122 in the wafer multi-defect detection device 100 located below and the back surface of the wafer. This design can reduce the situation that the same dirty defect can be detected on the front surface but not on the back surface. The detection height of the second light uniformizing plate in the wafer multi-defect detection device 100 located above and the front surface of the wafer is designed to be equal to the detection height of the second light uniformizing plate in the wafer multi-defect detection device 100 located below and the back surface of the wafer. This design can reduce the situation that the same hole and silicon drop defect can be detected on the front surface but not on the back surface. In addition, this detection height consistency can also simplify the debugging and maintenance of the device and reduce the operating cost of the device.

[0124] The detection principle of the wafer multi-defect detection device using the wafer multi-defect detection light source mechanism of the present application will be introduced below in combination with specific embodiments:

[0125] Please refer to Figure 3, the silicon wafer to be detected is conveyed on the conveying device 200 along the Y direction, when the silicon wafer to be detected is conveyed to the first silicon wafer multi-defect detection device 100 (i.e. the left side in the figure), the silicon wafer multi-defect detection light source mechanism 1 provides illumination for the front surface of the silicon wafer to be detected, the light from the first illumination assembly 12 strikes the front surface of the silicon wafer to be detected, is reflected by the silicon wafer, and passes through the light transmission hole 111 on the box body 11 to enter the camera of the upper detection mechanism 2, at the same time, the light from the second illumination assembly 13 strikes the front surface of the silicon wafer to be detected, is reflected by the silicon wafer, and passes through the light transmission hole 111 on the box body 11 to enter the camera of the upper detection mechanism 2, the processor in communication connection with the camera receives the image collected by the camera. After the processor acquires the image collected by the camera, the image is separated into a blue channel and a green channel through processing. Figure 5 the image of the silicon wafer in the blue channel, Figure 6 the image of the silicon wafer in the green channel Figure 5 、 6 the image of the same surface of the same silicon wafer after being photographed by the same silicon wafer multi-defect detection light source mechanism). It can be seen from the comparison that, Figure 5 the dirt features in the blue channel are more obvious, Figure 5 four dirt positions, i.e. dirt 1, dirt 2, dirt 3 and dirt 4, are shown in the blue channel, while in the green channel, Figure 6 only dirt 1, dirt 2 and dirt 3 of the four dirt positions are shown, and dirt 4 cannot be seen, and Figure 5 the dirt positions are relatively unclear in the green channel. Figure 6 the silicon drop features in the green channel are more obvious, Figure 6 two silicon drop positions, i.e. silicon drop 1 and silicon drop 2, are shown in the green channel, while in the blue channel, Figure 5 only silicon drop 1 of the two silicon drop positions is shown. It can be seen that the silicon wafer multi-defect detection light source can detect multiple defects in one image by using one camera.

[0126] when the silicon wafer to be detected is conveyed to the second silicon wafer multi-defect detection device 100 (i.e. the right side in the figure), the silicon wafer multi-defect detection light source mechanism 1 provides illumination for the back surface of the silicon wafer to be detected, the light from the first illumination assembly 12 strikes the back surface of the silicon wafer to be detected, is reflected by the silicon wafer, and passes through the light transmission hole 111 on the box body 11 to enter the camera of the lower detection mechanism 2, at the same time, the light from the second illumination assembly 13 strikes the back surface of the silicon wafer to be detected, is reflected by the silicon wafer, and passes through the light transmission hole 111 on the box body 11 to enter the camera of the lower detection mechanism 2, the processor in communication connection with the camera receives the image collected by the camera, the processor acquires the image collected by the camera, and separates the image into a blue channel and a green channel through processing.

[0127] A sufficiently detailed description of the present application has been given above with a certain particularity. One skilled in the art should understand that the description in the embodiments is only exemplary, and all changes made without departing from the true spirit and scope of the present application should belong to the protection scope of the present application. The scope of protection claimed by the present application is defined by the claims described, not by the above description in the embodiments.

Claims

1. A silicon wafer multi-defect detection light source mechanism, characterized by, The silicon wafer multi-defect detection light source mechanism comprises: a box body provided with an opening on one side, and a light-transmitting hole extending in a first direction being formed in a box wall opposite to the opening; a first lighting assembly comprising a first lighting part and a first light uniformizing part; the first lighting part comprises at least two first light sources, each of which is a linear light source arranged in the first direction; each of the first light sources is mounted inside the box body; the first light uniformizing part is arranged at the opening of the box body, so that the light of each of the first light sources can uniformly irradiate a target irradiation plane after being uniformly processed by the first light uniformizing part; a second lighting assembly comprising a second lighting part and a second light uniformizing part; the second lighting part comprises n second light sources, n≥1; each of the second light sources is a linear light source arranged in the first direction; the second light sources are mounted inside or outside the box body; the second light uniformizing part comprises n second light uniformizing plates, which correspond to the n second light sources respectively; the light emitting direction of each of the second light sources forms a non-zero angle with the normal direction of the target irradiation plane, and forms a light band extending in the first direction on the target irradiation plane; the wavelengths of the first light sources and the second light sources are different; the first light sources are used for providing illumination for dirt detection of the silicon wafer; and the second light sources are used for providing illumination for hole and silicon fall detection of the silicon wafer.

2. The inspection light source mechanism for multiple defects of a silicon wafer according to claim 1, characterized by, Each of the first light sources adopts a blue light source with a wavelength range of 450-495 nm, and / or each of the second light sources adopts a green light source with a wavelength range of 500-570 nm.

3. The inspection light source mechanism for multiple defects of a silicon wafer according to Claim 1, wherein The light emitting direction of each of the first light sources forms an angle of 0°-90° with the normal direction of the target irradiation plane, and the light emitting directions of the first light sources are different from each other, and / or the light emitting direction of each of the second light sources forms an angle of 20°-80° with the normal direction of the target irradiation plane.

4. The silicon wafer multi-defect detection light source mechanism according to claim 1, wherein when the second light sources are mounted inside the box body, the light emitting paths of the second light sources intersect with the first light uniformizing part respectively, and form a plurality of overlapping positions on the first light uniformizing part; a light-transmitting structure is arranged at each of the overlapping positions, and the light-transmitting structure is configured to allow the second light sources to pass through and limit the first light sources to pass through; when the second light sources are mounted outside the box body, the second light sources are mounted on a light source mounting rack outside the box body.

5. The inspection light source mechanism for multiple defects of a silicon wafer according to Claim 4, wherein when the second light sources are mounted inside the box body, the light-transmitting structure is a slit extending in the first direction formed on the first light uniformizing part or a transmission area extending in the first direction arranged on the first light uniformizing part.

6. The inspection light source mechanism for multiple defects of a silicon wafer according to Claim 1, wherein the first light uniformizing part comprises one first light uniformizing plate, or the first light uniformizing part comprises m third light uniformizing plates, m≥2; When the first light uniformizing part is one first light uniformizing plate, the first light uniformizing plate is configured to cover the light paths of all the first light sources to perform light uniformizing on the light emitted by each first light source, so that the light of each first light source is uniformly irradiated to the target irradiation plane. Alternatively, When the first light uniformizing part is m third light uniformizing plates arranged side by side, the m third light uniformizing plates are configured to cover the light paths of all the first light sources to perform light uniformizing on the light emitted by each first light source, so that the light of each first light source is uniformly irradiated to the target irradiation plane.

7. The silicon wafer multi-defect detection light source mechanism according to claim 1, wherein when n = 1, the light emitted by the single second light source is configured to form a light band extending along the first direction on the target irradiation plane. Alternatively, When n ≥ 2, the light emitted by the n second light sources is configured to converge to form a light band extending along the first direction on the target irradiation plane. The silicon wafer multi-defect detection device comprises a detection mechanism and the silicon wafer multi-defect detection light source mechanism according to any one of claims 1-7, wherein the first illumination assembly in the silicon wafer multi-defect detection light source mechanism is used to uniformly irradiate the to-be-detected surface of the silicon wafer, and the second illumination assembly in the silicon wafer multi-defect detection light source mechanism is used to form a light band extending along the first direction on the to-be-detected surface of the silicon wafer.

8. A silicon wafer multi-defect detection apparatus, characterized by comprising: The detection mechanism comprises a camera and a processor; the camera is configured to collect an image of the to-be-detected surface of the silicon wafer irradiated by the silicon wafer multi-defect detection light source mechanism; the shooting end of the camera, the light transmission hole, and the light band on the to-be-detected surface are sequentially located on the same vertical plane, the light band passes through the light transmission hole into the shooting end of the camera after being reflected by the to-be-detected surface; wherein the vertical plane is perpendicular to the box wall of the box body on which the light transmission hole is formed; the processor is in communication connection with the camera, and the processor is configured to receive the image collected by the camera and detect the defects of the silicon wafer according to the image collected by the camera.

9. The silicon wafer multi-defect detection device according to claim 8, wherein the first light uniformizing part is arranged in parallel with the to-be-detected surface of the silicon wafer, the height difference between the first light uniformizing part and the to-be-detected surface of the silicon wafer is 25-80 mm, and / or the height difference between each second light uniformizing plate in the second light uniformizing part and the to-be-detected surface of the silicon wafer is 10-60 mm. The silicon wafer multi-defect detection device comprises a conveying device and two silicon wafer multi-defect detection devices according to any one of claims 8-9, wherein the conveying device comprises at least a first conveying section and a second conveying section arranged in parallel along a second direction to convey the silicon wafer along the second direction, and the second direction is perpendicular to the first direction. ​ ​ 10. A silicon wafer multi-defect detection apparatus, characterized by, ​ ​ Two silicon wafer multi-defect detection devices are arranged staggeredly along the second direction; one of the silicon wafer multi-defect detection devices is arranged above the first transmission section or the second transmission section and used for detecting front surface defects of the silicon wafer; and the other silicon wafer multi-defect detection device is arranged below the interval between the first transmission section and the second transmission section and used for detecting back surface defects of the silicon wafer when the silicon wafer moves between the first transmission section and the second transmission section.

11. The apparatus for multi-defect detection of a silicon wafer according to claim 10, wherein, The interval between the first transmission section and the second transmission section ranges from 30 mm to 70 mm.

12. The silicon wafer multi-defect detection device according to claim 10, wherein a height difference between the first light homogenizing part in the silicon wafer multi-defect detection device arranged above the first transmission section or the second transmission section and the front surface of the silicon wafer is H1, a height difference between the first light homogenizing part in the silicon wafer multi-defect detection device arranged below the interval between the first transmission section and the second transmission section and the back surface of the silicon wafer is H2, and H1 = H2. And / or, a height difference between the second light homogenizing part in the silicon wafer multi-defect detection device arranged above the first transmission section or the second transmission section and the front surface of the silicon wafer is h1, a height difference between the second light homogenizing part in the silicon wafer multi-defect detection device arranged below the interval between the first transmission section and the second transmission section and the back surface of the silicon wafer is h2, and h1 = h2. ​

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