Micro LED display chip

Abstract

The utility model provides a Micro LED display chip, and belongs to the technical field of Micro LED display, and the Micro LED display chip is characterized in that a grid layer is arranged on a driving panel, and the depth of grid holes of the grid layer exceeds the upper surface of an LED light-emitting unit, so that the LED light-emitting unit can be completely embedded into the grid holes of the grid layer, the adjacent LED light-emitting units are separated through the grid layer, and the LED light-emitting units are separated through the grid layer. The first transmission and reflection layer can cover the grid layer and the LED light-emitting units in a complete and continuous non-planar structure, initial color light is transmitted over the corresponding LED light-emitting units through the first transmission and reflection units, and the first transmission and reflection isolation units cover the surface of the grid layer to reflect the initial color light. The anti-crosstalk structure capable of reflecting the light is formed, and the crosstalk phenomenon of the light emitted by the LED light-emitting unit in the transmission process is reduced, so that the light output quantity of the first transmission and reflection layer is improved, and the light-emitting brightness of the chip is improved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of Micro LED display, and particularly relates to a Micro LED display chip. BACKGROUND

[0002] Micro LED display technology refers to a display technology in which microscale LED as a self-luminous pixel unit is assembled on a driving panel to form a high-density LED array. Due to the small size, high integration and self-luminous characteristics of the Micro LED chip, the Micro LED display technology has greater advantages in brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability compared with LCD and OLED.

[0003] The Micro LED chip converts the light emitted by the Micro LED element through a wavelength conversion unit to obtain light of different wavelengths, so as to realize full-color display of the Micro LED display chip. However, although the setting of the filter layer in the full-color process can improve the overall light brightness of the chip, there is still a certain influence on the light brightness of the Micro LED chip due to the existence of light leakage in the filter layer. UTILITY MODEL CONTENT

[0004] The utility model aims at solving one of the technical problems existing in the prior art or related art.

[0005] Therefore, according to the embodiment of the application, a Micro LED display chip is provided, which comprises:

[0006] a driving panel;

[0007] a plurality of LED light emitting units arranged on the driving panel;

[0008] a grid layer, the grid layer is arranged on the driving panel, and the LED light emitting unit is located in a grid hole of the grid layer;

[0009] the depth of the grid hole is higher than the upper surface of the LED light emitting unit;

[0010] a first transmission reflection layer, the first transmission reflection layer is a non-planar structure, and the first transmission reflection layer comprises a plurality of first transmission reflection units and a first transmission reflection isolation unit located between adjacent first transmission reflection units;

[0011] the first transmission reflection unit is located above the corresponding LED light emitting unit, and the depth of the grid hole is higher than the upper surface of the first transmission reflection unit, the first transmission reflection isolation unit is arranged on the surface of the grid layer and is connected with the first transmission reflection unit.

[0012] In an implementation, the Micro LED display chip further comprises:

[0013] The wavelength conversion layer comprises at least a first wavelength conversion unit and a second wavelength conversion unit, and the first wavelength conversion unit and the second wavelength conversion unit are filled in the recessed area surrounded by the lattice hole and the first transmissive reflective layer;

[0014] The LED light emitting unit emits initial color light, the first wavelength conversion unit converts the initial color light into first color light, and the second wavelength conversion unit converts the initial color light into second color light.

[0015] In an implementation, the Micro LED display chip further comprises:

[0016] The second transmissive reflective layer is arranged on the side of the lattice layer away from the driving panel, and the second transmissive reflective layer is connected with the wavelength conversion layer.

[0017] In an implementation, the Micro LED display chip further comprises:

[0018] The microlens is arranged on the side of the second transmissive reflective layer away from the driving panel, and the microlens is located directly above the wavelength conversion layer.

[0019] In an implementation, the wavelength conversion layer further comprises:

[0020] The light transmission unit is filled in the recessed area surrounded by the lattice hole and the first transmissive reflective layer, the LED light emitting unit emits initial color light, and the initial color light is transmitted through the light transmission unit;

[0021] The second transmissive reflective layer further comprises:

[0022] The inlay opening penetrates the second transmissive reflective layer, and the inlay opening is located directly above the light transmission unit;

[0023] The light transmission inlay layer is embedded in the inlay opening, and the light transmission inlay layer is connected with the microlens and the light transmission unit.

[0024] In an implementation, the lattice layer comprises a first lattice layer and a second lattice layer, and the first transmissive reflective layer is arranged between the first lattice layer and the second lattice layer;

[0025] The first lattice layer is arranged on the driving panel, and the first lattice layer is connected with the first side of the first transmissive reflective isolation unit, the LED light emitting unit is embedded in the lattice hole of the first lattice layer, the first lattice layer is protruded in the direction away from the driving panel, and the depth of the lattice hole of the first lattice layer is higher than the upper surface of the LED light emitting unit;

[0026] The first transmissive and reflective isolation unit is arranged on the grid surface of the first grid layer, so that the first transmissive and reflective layer is covered on the first grid layer along the topography of the first grid layer.

[0027] The second grid layer is connected with the second side of the first transmissive and reflective isolation unit, and the second grid layer and the first transmissive and reflective layer surround the recessed area.

[0028] In a feasible implementation, the Micro LED display chip further comprises:

[0029] The light reflection layer is arranged on at least the hole wall of the grid hole of the grid layer.

[0030] In a feasible implementation, the Micro LED display chip further comprises:

[0031] The blocking layer is arranged on the light emitting surface and the side surface of the LED light emitting unit.

[0032] In a feasible implementation, the Micro LED display chip further comprises:

[0033] The filling layer is filled between the LED light emitting unit and the grid layer, and the first transmissive and reflective layer is arranged on the filling layer.

[0034] In a feasible implementation, the surface of the filling layer away from the driving panel is not lower than the light emitting surface of the LED light emitting unit.

[0035] Compared with the prior art, the Micro LED display chip has the beneficial effects that:

[0036] The Micro LED display chip provided by the embodiment of the present application comprises a driving panel, a plurality of LED light emitting units, a grid layer and a first transmission reflection layer. The driving panel controls the LED light emitting units to emit initial color light. The initial color light emitted by the LED light emitting units is filtered by the first transmission reflection layer and then emitted out, so as to enhance the reflectivity and transmissivity of the initial color light. The depth of the grid holes of the grid layer is greater than the upper surface of the LED light emitting units, so that the LED light emitting units can be completely embedded in the grid holes of the grid layer. The grid layer is used to separate the adjacent LED light emitting units. The first transmission reflection isolation unit is arranged on the surface of the grid layer and is connected with the first transmission reflection unit on the upper surface of the LED light emitting units. The first transmission reflection layer can be arranged on the grid layer and the LED light emitting units in a complete, continuous and non-planar structure. The initial color light is transmitted by the first transmission reflection unit above the corresponding LED light emitting unit. The first transmission reflection isolation unit arranged on the surface of the grid layer reflects the initial color light, so that the anti-crosstalk structure capable of reflecting light is formed. The crosstalk phenomenon of the light emitted by the LED light emitting units during transmission is reduced, the light output of the first transmission reflection layer is improved, and the luminous brightness of the chip is further improved. BRIEF DESCRIPTION OF DRAWINGS

[0037] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The accompanying drawings are included to provide a description of the preferred embodiments, and are not intended to limit the scope of the present application. Moreover, like reference numerals designate like parts throughout the several views in the drawings. In the drawings:

[0038] Figure 1 A first schematic structural diagram of the Micro LED display chip of an embodiment provided by the present application;

[0039] Figure 2 A second schematic structural diagram of the Micro LED display chip of an embodiment provided by the present application;

[0040] Figure 3 A schematic structural diagram of the Micro LED display chip of an embodiment provided by the present application after the filling of the wavelength conversion layer;

[0041] Figure 4 A schematic structural diagram of the Micro LED display chip of an embodiment provided by the present application after the setting of the second transmission reflection layer;

[0042] Figure 5 A schematic structural diagram of the Micro LED display chip of an embodiment provided by the present application after the setting of the inlaying opening;

[0043] Figure 6 A third schematic structural diagram of a Micro LED display chip according to an embodiment of the present application is provided;

[0044] Figure 7 A schematic structural diagram of preparing a light reflection layer of a Micro LED display chip according to an embodiment of the present application is provided;

[0045] Figure 8 A schematic structural diagram of etching the light reflection layer of a Micro LED display chip according to an embodiment of the present application is provided;

[0046] Figure 9 A schematic structural diagram of filling the LED light emitting unit of a Micro LED display chip according to an embodiment of the present application is provided;

[0047] Figure 10 A schematic structural diagram of preparing a first transmission reflection layer of a Micro LED display chip according to an embodiment of the present application is provided;

[0048] In the above description, Figures 1 to 10 The correspondence between the reference signs and the component names in the above description is as follows:

[0049] 10, driving panel; 11, LED light emitting unit; 12, grid layer; 13, first transmission reflection layer; 14, wavelength conversion layer; 15, second transmission reflection layer; 16, microlens; 17, light reflection layer; 18, barrier layer; 19, filling layer; 20, recessed area; 21, inlay opening; 22, light-transmitting inlay layer;

[0050] 101, substrate; 102, positive metal contact layer; 103, negative metal contact layer; 104, anode; 105, cathode; 106, passivation layer;

[0051] 131, first transmission reflection unit; 132, first transmission reflection isolation unit;

[0052] 12a, first grid layer; 12b, second grid layer;

[0053] 141, first wavelength conversion unit; 142, second wavelength conversion unit; 143, light-transmitting unit. DETAILED DESCRIPTION

[0054] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like indicate the orientation or positional relationship shown in the drawings, and are only used for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0055] In addition, the terms "first", "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise explicitly specified and limited.

[0056] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection", "fixing" and the like should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0057] The preferred embodiments of the present application are described below in conjunction with the accompanying drawings, and it should be understood that the preferred embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0058] As Figure 1 and Figure 2As shown, according to the embodiment of the present application, a Micro LED display chip is provided, comprising: a driving panel 10, a plurality of LED light emitting units 11, a grid layer 12 and a first transmission reflection layer 13; the plurality of LED light emitting units 11 are arranged on the driving panel 10; the grid layer 12 is arranged on the driving panel 10, and the LED light emitting unit 11 is located in the grid hole of the grid layer 12; the depth of the grid hole is higher than the upper surface of the LED light emitting unit 11; the first transmission reflection layer 13 is a non-planar structure, and the first transmission reflection layer 13 comprises a plurality of first transmission reflection units 131 and a first transmission reflection isolation unit 132 located between adjacent first transmission reflection units 131; the first transmission reflection unit 131 is located above the corresponding LED light emitting unit 11, and the depth of the grid hole is higher than the upper surface of the first transmission reflection unit 131; the first transmission reflection isolation unit 132 is arranged on the surface of the grid layer 12 and is connected with the first transmission reflection unit 131.

[0059] The Micro LED display chip provided by the embodiment of the present application comprises the driving panel 10, the plurality of LED light emitting units 11, the grid layer 12 and the first transmission reflection layer 13, the driving panel 10 controls the LED light emitting unit 11 to emit initial color light, and the initial color light emitted by the LED light emitting unit 11 is emitted after being filtered by the first transmission reflection layer 13, so as to enhance the reflectivity and transmissivity of the initial color light; by arranging the grid layer 12 on the driving panel 10, the depth of the grid hole of the grid layer 12 is higher than the upper surface of the LED light emitting unit 11, so that the LED light emitting unit 11 can be completely embedded in the grid hole of the grid layer 12, so as to separate the adjacent LED light emitting units 11 through the grid layer 12, the first transmission reflection isolation unit 132 is arranged on the surface of the grid layer 12 and connected with the first transmission reflection unit 131 on the upper surface of the LED light emitting unit 11, so that the first transmission reflection layer 13 can cover the grid layer 12 and the LED light emitting unit 11 in a complete and continuous non-planar structure, the initial color light is transmitted through the first transmission reflection unit 131 directly above the corresponding LED light emitting unit 11, and the first transmission reflection isolation unit 132 covers the surface of the grid layer 12 to reflect the initial color light, forming an anti-crosstalk structure capable of reflecting light, reducing the crosstalk phenomenon of the light emitted by the LED light emitting unit 11 in the transmission process, and helping to improve the light output of the first transmission reflection layer 13, thereby further improving the luminous brightness of the chip.

[0060] It can be understood that the plurality of LED light emitting units 11 can be arranged on the driving panel 10 in a regular or irregular manner as pixels of the chip, and the first transmission reflection layer 13 covers each pixel area.

[0061] In some examples, as Figure 2As shown, the driving panel 10 includes a substrate 101, a positive metal contact layer 102, a negative metal contact layer 103, an anode 104, a cathode 105, and a passivation layer 106. The materials forming the substrate 101 include, but are not limited to, silicon-based CMOS, thin-film field-effect transistors, etc., which provide stable support for the overall structure and allow current and heat to be effectively transferred in the chip. The positive metal contact layer 102 and the negative metal contact layer 103 are located on the P-type region and the negative metal contact layer 103 is located on the N-type region. They are used to reduce contact resistance, ensure that current can pass through efficiently and stably, and establish a stable electrical connection between the LED light-emitting unit 11 and the substrate 101. The anode 104 is responsible for providing holes, and the cathode 105 is responsible for providing electrons. Through the action of the electric field, holes and electrons recombine, causing the LED light-emitting unit 11 to produce light emission.

[0062] like Figure 3 As shown, in one feasible embodiment, the Micro LED display chip further includes: a wavelength conversion layer 14, the wavelength conversion layer 14 including at least a first wavelength conversion unit 141 and a second wavelength conversion unit 142, the first wavelength conversion unit 141 and the second wavelength conversion unit 142 filling the recessed area 20 enclosed by the grid hole and the first transmission and reflection layer 13; the LED light-emitting unit 11 emits initial color light, the first wavelength conversion unit 141 converts the initial color light into first color light; the second wavelength conversion unit 142 converts the initial color light into second color light.

[0063] In this technical solution, the first wavelength conversion unit 141 and the second wavelength conversion unit 142 fill the recessed area 20 formed by the grid hole and the first transmission and reflection layer 13, and are located directly above the LED light-emitting unit 11. After the initial color light passes through the first transmission and reflection layer 13 and enters the first wavelength conversion unit 141, the first wavelength conversion unit 141 converts the initial color light into the first color light. After the initial color light passes through the first transmission and reflection layer 13 and enters the second wavelength conversion unit 142, the second wavelength conversion unit 142 converts the initial color light into the second color light. Thus, through the arrangement and combination of the first wavelength conversion unit 141 and the second wavelength conversion unit 142, the chip can achieve multi-color light output.

[0064] Furthermore, the LED light-emitting unit 11 emits blue light; the first wavelength conversion unit 141 uses a red wavelength conversion material, and the second wavelength conversion unit 142 uses a green wavelength conversion material to convert the blue light emitted by the LED light-emitting unit 11 into red and green light, forming red and green light output. Then, through the arrangement and combination of the first wavelength conversion unit 141 and the second wavelength conversion unit 142, red and green light are emitted, realizing multi-color light output of the chip.

[0065] Furthermore, before the initial color light conversion, selective filtering is first performed through the first transmissive and reflective layer 13 to make the first color light and the second color light have higher reflectivity and the initial color light have higher transmittance, thereby ensuring the light purity of the sub-pixel area and improving the overall color gamut of the display screen.

[0066] like Figure 4 As shown, in one feasible embodiment, the Micro LED display chip further includes a second transmissive and reflective layer 15, which is disposed on the side of the grid layer 12 away from the driving panel 10, and is connected to the wavelength conversion layer 14.

[0067] In this technical solution, the second transmission and reflection layer 15 reflects the initial color light and transmits the first color light and the second color light. By setting the second transmission and reflection layer 15, on the one hand, the anti-cross-light effect and light output uniformity can be further improved; on the other hand, the second transmission and reflection layer 15 can reflect the initial color light doped in the first color light to the first wavelength conversion unit 141 and reflect the initial color light doped in the second color light to the second wavelength conversion unit 142, so that the initial color light that has not been converted by the first wavelength conversion unit 141 and the second wavelength conversion unit 142 can be absorbed and converted again by the corresponding first wavelength conversion unit 141 and the second wavelength conversion unit 142, thereby improving the absorption and conversion capabilities of the wavelength conversion material in the conversion unit.

[0068] In this technical solution, the second transmission and reflection layer 15 is connected to the wavelength conversion layer 14, which can play a protective role, provide support and fixation for the entire structure, improve the overall structure's ability to resist deformation and damage, and at the same time prevent rainwater, dust and other pollutants from directly contacting sensitive components such as the internal LED light-emitting unit 11 or the driver panel 10, thereby extending the service life of the overall structure.

[0069] Furthermore, the second transmissive and reflective layer 15 transmits red and green light and reflects blue light.

[0070] As a preferred embodiment, the first wavelength conversion unit 141 and the second wavelength conversion unit 142 are filled with quantum dots, and the second transmission and reflection layer 15 is deposited on the first wavelength conversion unit 141 and the second wavelength conversion unit 142 using quantum dot coating technology, so as to ensure the tightness and reliability of the combination between the second transmission and reflection layer 15 and the first wavelength conversion unit 141 and the second wavelength conversion unit 142.

[0071] like Figure 6As shown in a feasible implementation, the Micro LED display chip further comprises: a microlens 16, the microlens 16 is arranged on the side of the second transmissive reflective layer 15 away from the driving panel 10, and the microlens 16 is located directly above the wavelength conversion layer 14.

[0072] In the technical scheme, the microlens 16 is arranged on the second transmissive reflective layer 15 and located directly above the wavelength conversion layer 14, so that the light rays are converged by the microlens 16, thereby forming a converging light emission effect, and a more intense spatial contrast of brightness and darkness is formed, and the visual effect is improved.

[0073] As shown in the embodiment, Figures 3 to 6 In a feasible implementation, the wavelength conversion layer 14 further comprises: a light transmission unit 143, the light transmission unit 143 is filled in the recessed area 20 surrounded by the grid layer 12 and the first transmissive reflective layer 13; the LED light emitting unit 11 emits initial color light, and the initial color light is transmitted through the light transmission unit 143.

[0074] In the technical scheme, the light transmission unit 143 is filled in the recessed area 20 surrounded by the grid layer 12 and the first transmissive reflective layer 13 and located directly above the LED light emitting unit 11; the initial color light emitted by the LED light emitting unit 11 can continue to be transmitted through the light transmission unit 143, and the light emission of the initial color light is formed through the light transmission unit 143.

[0075] Further, the LED light emitting unit 11 emits blue light, the light transmission unit 143 is made of transparent material, and the blue light is emitted through the light transmission unit 143; and through the orderly arrangement and combination of the light transmission unit 143, the first wavelength conversion unit 141 and the second wavelength conversion unit 142, the blue light, the red light and the green light are orderly emitted through the light transmission unit 143, the first wavelength conversion unit 141 and the second wavelength conversion unit 142, so that full-color light emission of the chip is realized.

[0076] Specifically, the transparent material is a high-transmittance transparent material; the wavelength conversion material includes but is not limited to fluorescent powder, quantum dots and the like.

[0077] As shown in the embodiment, Figure 5 In a feasible implementation, the second transmissive reflective layer 15 further comprises: an inlay opening 21 and a light transmission inlay layer 22, the inlay opening 21 penetrates through the second transmissive reflective layer 15, and the inlay opening 21 is located directly above the light transmission unit 143; the light transmission inlay layer 22 is embedded in the inlay opening 21, and the light transmission inlay layer 22 is connected with the microlens 16 and the light transmission unit 143.

[0078] In the technical solution, the inlaid opening 21 is arranged through the second transmissive reflective layer 15 directly above the light transmission unit 143, the light transmission inlaid layer 22 is filled in the inlaid opening 21, and the light transmission inlaid layer 22 is connected with the microlens 16 and the light transmission unit 143, so that the second transmissive reflective layer 15 is flattened, and the light emitting effect is improved.

[0079] In the technical solution, the first color light generated by the first wavelength conversion unit 141, the second color light generated by the second wavelength conversion unit 142, and the initial color light emitted through the light transmission inlaid layer 22 are converged by the microlens 16, so that the effect of multi-color convergence and light emission of the chip is realized.

[0080] Further, the second transmissive reflective layer 15 transmits red light and green light and reflects blue light, and the light transmission inlaid layer 22 transmits blue light. Specifically, the light transmission inlaid layer 22 is made of transparent material, and the transparent material is a high-transmittance transparent material, so as to ensure high-efficiency transmission of the initial color light.

[0081] As shown in FIG. 1, in an embodiment, the grid layer 12 includes a first grid layer 12a and a second grid layer 12b, and the first transmissive reflective layer 13 is arranged between the first grid layer 12a and the second grid layer 12b. Figure 6 The first grid layer 12a is arranged on the driving panel 10, and the first grid layer 12a is connected with the first side of the first transmissive reflective isolation unit 132. The LED light emitting unit 11 is embedded in the grid hole of the first grid layer 12a, and the first grid layer 12a is protruded in a direction away from the driving panel 10, so that the depth of the grid hole of the first grid layer 12a is higher than the upper surface of the LED light emitting unit 11. The first transmissive reflective isolation unit 132 is arranged on the grid surface of the first grid layer 12a, so that the first transmissive reflective layer 13 is arranged on the first grid layer 12a along the topography of the first grid layer 12a. The second grid layer 12b is connected with the second side of the first transmissive reflective isolation unit 132, and the second grid layer 12b and the first transmissive reflective layer 13 form the recessed area 20.

[0082] In the technical solution, the grid layer 12 includes two, the first transmission reflection layer 13 is arranged between the first grid layer 12a and the second grid layer 12b, the LED light emitting unit 11 is embedded in the grid hole of the first grid layer 12a, the depth of the grid hole of the first grid layer 12a is higher than the upper surface of the LED light emitting unit 11, the first transmission reflection layer 13 is covered on the first grid layer 12a and the LED light emitting unit 11 along the topography of the first grid layer 12a, and the first transmission reflection layer 13 is cut off between the LED light emitting units 11, so that the self-cutting function of the display chip is realized; the second grid layer 12b is higher than the first grid layer 12a, and the light isolation structure is formed between the light transmission unit 143, the first wavelength conversion unit 141 and the second wavelength conversion unit 142, so that the anti-crosstalk effect is further improved. Through the cooperation of the second grid layer 12b and the first grid layer 12a, the cutting range and cutting effect of the anti-crosstalk structure are increased, so that the crosstalk phenomenon of the chip is minimized, and a complete anti-crosstalk structure is formed.

[0083] In the technical solution, the first transmission reflection isolation unit 132 is arranged outside the first grid layer 12a, so as to ensure that the light emitted by the first grid layer 12a also undergoes the filtering treatment of the first transmission reflection layer 13 before entering the second grid layer 12b; the LED light emitting unit 11 is embedded in the grid hole of the first grid layer 12a, so that the light emitted by the LED light emitting unit 11 can be directly reflected through the first grid layer 12a, so as to reduce the crosstalk in the chip, thereby improving the utilization efficiency of the light. Then, the light emitted by the LED light emitting unit 11 is converted in color by the first wavelength conversion unit 141 and the second wavelength conversion unit 142, so as to improve the brightness of the full-color light output of the chip, and realize high-quality optical output.

[0084] Further, the depth of the grid hole of the first grid layer 12a is at least higher than the thickness of the first transmission reflection layer 13 of the LED light emitting unit 11, that is, the depth of the grid hole of the first grid layer 12a is at least higher than the first transmission reflection layer 13, so as to ensure that the first grid layer 12a can be covered on the grid hole wall of the first grid layer 12a, and the crosstalk in the first transmission reflection layer 13 is minimized through the first grid layer 12a.

[0085] Further, the filtering material is deposited on the first grid layer 12a in a film plating manner, or the filtering material is coated on the first grid layer 12a in a spin coating manner, that is, the first transmission reflection layer 13 is formed on the first grid layer 12a, and the LED light emitting unit 11 is filtered.

[0086] As shown in FIG. 1, Figure 6 In a feasible implementation, the Micro LED display chip further includes: a light reflection layer 17, the light reflection layer 17 is arranged at least on the hole wall of the grid hole of the grid layer 12.

[0087] In the technical solution, the light reflection layer 17 covers at least the hole walls of the grid holes of the grid layer 12 to form a grid layer 12 structure capable of reflecting light and having a certain height, further inhibiting the lateral light leakage of the LED light emitting unit 11. Since the grid hole depth of the grid layer 12 is greater than the upper surface of the LED light emitting unit 11, the light reflection layer 17 can more completely cover the light emission range of the LED light emitting unit 11. The grid layer 12 blocks the light between the pixel points, reduces the occurrence of crosstalk, ensures that the grid layer 12 can reflect the light emitted by the LED light emitting unit, and ensures the light emission brightness of the chip.

[0088] In the technical solution, the light reflection layer 17 is covered on the hole walls of the grid holes of the grid layer 12 by coating technology, directly forming an anti-crosstalk structure capable of reflecting light on the grid layer 12. The process is simple and easy to implement, which helps to improve the production efficiency of the chip and reduce the production cost of the chip.

[0089] In the technical solution, the light reflection layer 17 completely covers each pixel area by depositing light reflection material on the hole walls of the grid holes of the grid layer 12 in a coating manner, forming an anti-crosstalk structure between the pixel points, thereby blocking the light crosstalk between the pixel points.

[0090] In some examples, as shown in Figure 7 , the light reflection layer 17 is prepared to cover the first grid layer 12a and the LED light emitting unit 11, and completely covers each pixel area. Before the first transmissive reflection layer 13 is prepared on the first grid layer 12a and the LED light emitting unit 11, the light reflection layer 17 on the light emitting surface and the side surface of the LED light emitting unit 11 and the light reflection layer 17 on the upper surface of the first grid layer 12a are removed by etching, as shown in Figure 8 , a Mesa gap is formed between the first grid layer 12a and the LED light emitting unit 11, ensuring that the light reflection layer 17 only blocks the light crosstalk between the pixel points; then, the upper top surface of the LED light emitting unit 11 is used as a filling standard surface, and a transparent substance is filled in the Mesa gap between the light reflection layer 17 and the LED light emitting unit 11, as shown in Figure 9 , the Mesa gap between the light reflection layer 17 and the LED light emitting unit 11 is filled and leveled, ensuring that the basis surface for subsequent preparation of the first transmissive reflection layer 13 is flat; when the first transmissive reflection layer 13 is prepared, the light filtering material is spin-coated or coated on the basis surface generated by the filling and leveling, as shown in Figure 10 , a non-planar and continuous first transmissive reflection layer 13 is directly prepared along the topography formed by the first grid layer 12a and the LED light emitting unit 11, which omits the etching steps such as exposure and development in the original preparation process, makes the preparation process of the display chip simpler, reduces the light crosstalk in the chip, and improves the light emission brightness of the chip.

[0091] It should be noted that the materials forming the grid layer 12 include, but are not limited to, organic resins, organic black matrix photoresists, color filter photoresists, and polyimide.

[0092] As shown in 6, in one feasible embodiment, the Micro LED display chip further includes a blocking layer 18; the blocking layer 18 is disposed on the light-emitting surface and side surface of the LED light-emitting unit 11.

[0093] In this technical solution, a mask is prepared on the driving panel 10, and a blocking layer 18 is formed on the light-emitting surface and side of the LED light-emitting unit 11 by etching the mask, so as to avoid damage to the LED light-emitting unit 11 during the subsequent leveling process and protect the LED light-emitting unit 11.

[0094] It should be noted that the barrier layer 18 is formed by etching a mask, and the materials used to form the barrier layer 18 include, but are not limited to, silicon dioxide, silicon nitride, and aluminum oxide.

[0095] like Figure 6 As shown, in one feasible embodiment, the Micro LED display chip further includes: a leveling layer 19; the leveling layer 19 fills the space between the barrier layer 18 and the grid layer 12, and a first transmissive reflective layer 13 is disposed on the leveling layer 19.

[0096] In this technical solution, a filling layer 19 is formed between the blocking layer 18 and the grid layer 12 to fill the mesa gap between the first grid layer 12a and the LED light-emitting unit 11, so that the first transmission and reflection layer 13 can be flatter and the filtering effect of the first transmission and reflection layer 13 can be improved.

[0097] Furthermore, the leveling layer 19 is made of a transparent material. The leveling layer 19 can be filled into the mesa gap between the first grid layer 12a and the LED light-emitting unit 11 by means of coating or filling with transparent photoresist.

[0098] like Figure 6 As shown, in one feasible embodiment, the surface of the filler layer 19 facing away from the drive panel 10 is not lower than the light-emitting surface of the LED light-emitting unit 11.

[0099] In this technical solution, the surface of the leveling layer 19 facing away from the driving panel 10 is not lower than the light-emitting surface of the LED light-emitting unit 11, so that the first transmission and reflection layer 13 above the LED light-emitting unit 11 is flat, thereby blocking the light path of the LED light-emitting unit 11 and reducing light scattering.

[0100] It will be readily understood by those skilled in the art that the aforementioned advantageous methods can be freely combined and superimposed without conflict.

[0101] The above merely preferred embodiments of the present application are not used to limit the present application, any modification, equivalent replacement and improvement made within the spirit and principle of the present application should be included in the protection scope of the present application. The above is merely the preferred embodiment of the present application, it should be pointed out that, for the ordinary skilled in the art, without departing from the technical principle of the present application, a number of improvements and variations can be made, these improvements and variations should also be considered as the protection scope of the present application.

Claims

1. A Micro LED display chip, characterized in that, The Micro LED display chip comprises: a driving panel; a plurality of LED light emitting units arranged on the driving panel; a grid layer arranged on the driving panel, the LED light emitting units being located in grid holes of the grid layer; a depth of the grid hole being higher than an upper surface of the LED light emitting unit; a first transmissive reflective layer, the first transmissive reflective layer being a non-planar structure, the first transmissive reflective layer comprising a plurality of first transmissive reflective units and first transmissive reflective isolation units located between adjacent first transmissive reflective units; the first transmissive reflective unit being located above the corresponding LED light emitting unit, and the depth of the grid hole being higher than an upper surface of the first transmissive reflective unit, the first transmissive reflective isolation unit being arranged on a surface of the grid layer and being in contact with the first transmissive reflective unit. 2.The Micro LED display chip of claim 1, wherein, The Micro LED display chip further comprises: a wavelength conversion layer, the wavelength conversion layer comprising at least a first wavelength conversion unit and a second wavelength conversion unit, the first wavelength conversion unit and the second wavelength conversion unit being filled in a recessed area surrounded by the grid hole and the first transmissive reflective layer; the LED light emitting unit emitting initial color light, the first wavelength conversion unit converting the initial color light into first color light, and the second wavelength conversion unit converting the initial color light into second color light. 3.The Micro LED display chip of claim 2, wherein, The Micro LED display chip further comprises: a second transmissive reflective layer arranged on a side of the grid layer away from the driving panel, and the second transmissive reflective layer being in contact with the wavelength conversion layer. 4.The Micro LED display chip of claim 3, wherein, The Micro LED display chip further comprises: a microlens arranged on a side of the second transmissive reflective layer away from the driving panel, and the microlens being located directly above the wavelength conversion layer.

5. The Micro LED display chip according to claim 4, wherein the wavelength conversion layer further comprises: a light transmission unit, the light transmission unit being filled in the recessed area surrounded by the grid hole and the first transmissive reflective layer; the LED light emitting unit emitting initial color light, the initial color light being transmitted through the light transmission unit; the second transmissive reflective layer further comprises: an inlay opening, the inlay opening penetrating through the second transmissive reflective layer, and the inlay opening being located directly above the light transmission unit; a light transmission inlay layer, the light transmission inlay layer being embedded in the inlay opening, the light transmission inlay layer being in contact with the microlens and the light transmission unit.

6. The Micro LED display chip according to claim 2, wherein the grid layer comprises a first grid layer and a second grid layer, the first transmissive reflective layer being arranged between the first grid layer and the second grid layer. The first grid layer is arranged on the driving panel and is connected with the first side of the first transmissive and reflective isolation unit, the LED light emitting unit is embedded in the grid hole of the first grid layer, the first grid layer is protruded in the direction away from the driving panel, and the depth of the grid hole of the first grid layer is higher than the upper surface of the LED light emitting unit; The first transmissive and reflective isolation unit is arranged on the grid surface of the first grid layer, and the first transmissive and reflective layer is covered on the first grid layer along the topography of the first grid layer; The second grid layer is connected with the second side of the first transmissive and reflective isolation unit, and the second grid layer and the first transmissive and reflective layer surround the recessed area. 7.The Micro LED display chip of claim 1, wherein, The Micro LED display chip further comprises: A reflective layer is arranged on at least the hole wall of the grid hole of the grid layer. 8.The Micro LED display chip of claim 1, wherein, The Micro LED display chip further comprises: A blocking layer is arranged on the light emitting surface and the side surface of the LED light emitting unit. 9.The Micro LED display chip of any one of claims 1-8, wherein, The Micro LED display chip further comprises: A filling layer is arranged between the LED light emitting unit and the grid layer, and the first transmissive and reflective layer is arranged on the filling layer.

10. The Micro LED display chip according to claim 9, wherein The surface of the filling layer away from the driving panel is not lower than the light emitting surface of the LED light emitting unit.

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