Pressure distribution detection system and device for polishing equipment

Abstract

The utility model discloses a pressure distribution detection system and device for polishing equipment. The pressure distribution detection system for the polishing equipment comprises the polishing equipment, pressure distribution detection equipment, a wafer polishing state simulation silicon wafer and an upper computer, the polishing equipment comprises a polishing head, a base of the polishing head comprises an annular cavity and a retaining ring area, the annular cavity makes contact with the retaining ring area and a wafer polishing state simulation silicon wafer, the wafer polishing state simulation silicon wafer is used for simulating the wafer polishing state, and the annular cavity is used for providing pressure for the polishing head; the pressure distribution detection equipment comprises a circular array sensor module and a signal acquisition module, the circular array sensor module is connected with the signal acquisition module, and the signal acquisition module is connected with the upper computer. Pressure is applied to all areas of the polishing head through the annular cavity, the circular array sensor module conducts real-time pressure distribution detection, the upper computer analyzes and monitors pressure collection signals in real time, and the real-time pressure detection precision is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to technical field especially relates to a pressure distribution detection system and device for polishing equipment. BACKGROUND

[0002] The integrated circuit manufacturing process usually refers to depositing the conductor, the semiconductor, the insulating layer on the specific substrate including the silicon base wafer in a certain process sequence. The wafer as the substrate of the integrated circuit, the finished product quality and efficiency of its manufacturing processing directly affect the subsequent process, and determine the quality of the final finished chip. In the manufacturing process, the polishing process is a necessary process for removing the concave-convex or undulation on the wafer surface, and the mirror surface processing is usually carried out by the CMP (Chemical Mechanical Polishing) method. In the working process of the existing polishing equipment, the lower pressure of the annular cavity membrane in the polishing head is generated by inflation to act on the polished wafer, so as to ensure that the friction between the wafer and the polishing pad can meet the process requirements. For the different areas of the wafer, the appropriate polishing pressure can improve the flatness of the wafer, and facilitate the subsequent precision machining, but the abnormal lower pressure of the different cavities of the annular cavity membrane will cause the poor flatness, which is not conducive to the precision machining. Therefore, the detection and control system of the polishing pressure of the different cavities of the wafer polishing head is very important to confirm the performance of the annular cavity membrane by predicting the polishing curve of the polishing head during grinding on the machine. The existing technology usually detects the pressure of the annular cavity membrane cavity, and adjusts the pressure of the annular cavity membrane cavity in the polishing head by the electric proportional valve, and the pressure sensor arranged at the outlet part of the electric proportional valve is used as the feedback element in the closed loop. But the detection of the annular cavity membrane cavity cannot collect the real polishing pressure, and the grid sensor cannot realize real-time monitoring and will produce errors, and the collection accuracy is low. UTILIZABLE INNOVATION

[0003] The utility model provides a kind of pressure distribution detection system and device for polishing equipment, to solve the problem that prior art cannot realize high-precision pressure detection to polishing head in real time.

[0004] According to an aspect of the utility model, a kind of pressure distribution detection system for polishing equipment is provided, comprising:

[0005] Polishing equipment, pressure distribution detection equipment, wafer polishing state simulation silicon chip and host computer;

[0006] The polishing device comprises a polishing head, a base of the polishing head comprises a plurality of annular cavities and a retaining ring area at the edge of the base, the annular cavities are respectively arranged in contact with the retaining ring area and a wafer polishing state simulation wafer for simulating wafer polishing state, and the annular cavities are used for providing pressure for the polishing head;

[0007] The pressure distribution detection device comprises a circular array sensor module and a signal acquisition module; the circular array sensor module comprises a microstructure type flexible pressure sensor array; the microstructure type flexible pressure sensor array comprises a plurality of sensor units, and the plurality of sensor units are arranged in an array to form a sensing area of the circular array sensor module;

[0008] The circular array sensor module comprises a pressure signal output end and a circular array sensor module starting signal receiving end;

[0009] The signal acquisition module comprises a pressure signal receiving end, a pressure acquisition signal output end, a pressure distribution detection starting signal receiving end and a circular array sensor module starting signal output end;

[0010] The upper computer comprises a pressure acquisition signal receiving end and a pressure distribution detection starting signal output end;

[0011] The pressure distribution detection starting signal output end is connected with the pressure distribution detection starting signal receiving end, the pressure signal output end is connected with the pressure signal receiving end, the circular array sensor module starting signal output end is connected with the circular array sensor module starting signal receiving end, and the pressure acquisition signal output end is connected with the pressure acquisition signal receiving end.

[0012] Optionally, the pressure distribution detection device further comprises a calibration module;

[0013] The calibration module comprises a preset pressure output end, a force-electricity curve receiving end and a calibration signal output end;

[0014] The polishing head comprises a preset pressure receiving end;

[0015] The pressure distribution detection device comprises a force-electricity curve output end;

[0016] The circular array sensor module comprises a calibration signal receiving end;

[0017] The preset pressure output end is connected with the preset pressure receiving end, the force-electricity curve output end is connected with the force-electricity curve receiving end, and the calibration signal output end is connected with the calibration signal receiving end.

[0018] Optionally, the signal acquisition module comprises an artifact elimination circuit and a micro control unit.

[0019] The artifact elimination circuit is configured to virtually isolate the measured resistance in the circular array sensor module.

[0020] The micro control unit comprises an artifact elimination circuit pressure acquisition signal output end, a pressure acquisition signal output end, a pressure distribution detection start signal receiving end, and a circular array sensor module start signal output end.

[0021] The upper computer further comprises an artifact elimination circuit pressure acquisition signal receiving end.

[0022] The artifact elimination circuit pressure acquisition signal output end and the artifact elimination circuit pressure acquisition signal receiving end are connected.

[0023] Optionally, the artifact elimination circuit comprises a power supply, a standard resistance, a plurality of operational amplifiers, and a plurality of switches.

[0024] Optionally, the on-resistance of the plurality of switches is less than or equal to 4Ω.

[0025] Optionally, the sampling frequency of the pressure distribution detection device is 50 Hz.

[0026] Optionally, the pressure distribution detection system for the polishing device further comprises a polishing leak detection device.

[0027] The polishing leak detection device comprises a flat base; the circular array sensor module is located between the flat base and the wafer polishing state simulation silicon wafer; and the polishing leak detection device is connected to the annular cavity.

[0028] Optionally, the polishing leak detection device further comprises a fixing unit, and the fixing unit is connected to the polishing head, the circular array sensor module, and the flat base, respectively.

[0029] Optionally, the thickness of the wafer polishing state simulation silicon wafer is 750 μm, and the diameter is 12 inches.

[0030] In a second aspect, the utility model provides a kind of pressure distribution detection device for polishing equipment, comprising the pressure distribution detection system for polishing equipment of any one of the first aspect.

[0031] The technical scheme of the embodiment of the utility model provides a pressure distribution detection system for polishing equipment, which comprises a polishing equipment, a pressure distribution detection equipment, a wafer polishing state simulation silicon wafer and an upper computer; the polishing equipment comprises a polishing head, the base of the polishing head comprises a plurality of annular cavities and a retaining ring area located at the edge of the base, the annular cavities are respectively arranged in contact with the retaining ring area and the wafer polishing state simulation silicon wafer, the wafer polishing state simulation silicon wafer is used for simulating the wafer polishing state, and the annular cavities are used for providing pressure for the polishing head; the pressure distribution detection equipment comprises a circular array sensor module and a signal acquisition module; the circular array sensor module comprises a microstructure type flexible pressure sensor array; the microstructure type flexible pressure sensor array comprises a plurality of sensor units, and the plurality of sensor units are distributed in an array to form an induction area of the circular array sensor; the circular array sensor module comprises a pressure signal output end and a circular array sensor module starting signal receiving end; the signal acquisition module comprises a pressure signal receiving end, a pressure acquisition signal output end, a pressure distribution detection starting signal receiving end and a circular array sensor module starting signal output end; the upper computer comprises a pressure acquisition signal receiving end and a pressure distribution detection starting signal output end; the pressure distribution detection starting signal output end is connected with the pressure distribution detection starting signal receiving end, the pressure signal output end is connected with the pressure signal receiving end, the circular array sensor module starting signal output end is connected with the circular array sensor module starting signal receiving end, and the pressure acquisition signal output end is connected with the pressure acquisition signal receiving end. Through the annular cavities, pressure is applied to each area of the polishing head, the circular array sensor module performs real-time pressure distribution detection on each area of the polishing head, the upper computer performs real-time analysis and monitoring on the pressure acquisition signal, and the real-time pressure detection precision is improved.

[0032] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the utility model, nor is it used to limit the scope of the utility model. Other features of the utility model will become easy to understand through the following description. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical scheme in the embodiments of the utility model, the drawings needed to be used in the embodiment description will be briefly introduced below, and obviously, the drawings in the following description are only some embodiments of the utility model, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art.

[0034] Figure 1 The structure schematic diagram of the pressure distribution detection system for polishing equipment provided by the embodiment of the utility model;

[0035] Figure 2 The structure schematic diagram of the pressure distribution detection equipment provided by the embodiment of the utility model;

[0036] Figure 3 A software overall interface schematic view of an upper computer provided by the embodiment of the utility model;

[0037] Figure 4 A test result view of the pressure change test of the retaining ring area provided by the embodiment of the utility model;

[0038] Figure 5 Another test result view of the pressure change test of the retaining ring area provided by the embodiment of the utility model;

[0039] Figure 6 A test result view of the first area to the seventh area of the polishing head provided by the embodiment of the utility model;

[0040] Figure 7 A schematic view of the minimum resolution test result of the first area provided by the embodiment of the utility model;

[0041] Figure 8 A schematic view of the minimum resolution test result of the sixth area provided by the embodiment of the utility model;

[0042] Figure 9 A box plot of the pressure value of the sixth area provided by the embodiment of the utility model;

[0043] Figure 10 A schematic view of the 4psi continuous test result of the sixth area provided by the embodiment of the utility model;

[0044] Figure 11 Another schematic view of the 4psi continuous test result of the sixth area provided by the embodiment of the utility model;

[0045] Figure 12 A schematic view of the 4psi test result of the first area of the first polishing head provided by the embodiment of the utility model;

[0046] Figure 13 A schematic view of the 4psi test result of the first area of the second polishing head provided by the embodiment of the utility model;

[0047] Figure 14 A comparison schematic view of the 4psi test result of each area in the first polishing head and the second polishing head provided by the utility model;

[0048] Figure 15 A force-electricity curve view in the calibration process provided by the embodiment of the utility model;

[0049] Figure 16Another force-electricity curve diagram in a calibration process is provided for the embodiment of the utility model.

[0050] Figure 17 The structure schematic view of the pressure distribution detection device for the polishing equipment is provided for the embodiment of the utility model. DETAILED DESCRIPTION

[0051] In order to make the personnel in the technical field better understand the utility model scheme, the technical scheme in the embodiment of the utility model will be described clearly and completely below in combination with the drawings in the embodiment of the utility model, obviously, the described embodiment is only a part of the embodiment of the utility model, and is not all the embodiment. Based on the embodiment in the utility model, all other embodiments obtained by the person skilled in the art without making creative labor should belong to the protection scope of the utility model.

[0052] It should be noted that the terms "first", "second" and the like in the description and claims of the utility model and the above-mentioned drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data used in this way can be exchanged under appropriate circumstances, so that the embodiments of the utility model described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations, are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to the clearly listed steps or units, but can include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0053] Figure 1 The structure schematic view of the pressure distribution detection system for the polishing equipment is provided for the embodiment of the utility model, Figure 2 The structure schematic view of the pressure distribution detection device is provided for the embodiment of the utility model, as Figure 1 And Figure 2As shown, the pressure distribution detection system for the polishing equipment comprises a polishing equipment 101, a pressure distribution detection equipment 102, a wafer polishing state simulation wafer 103 and a host computer 104; the polishing equipment 101 comprises a polishing head 1011, the base of the polishing head 1011 comprises a plurality of annular cavities 1012 and a retaining ring area 1013 at the edge of the base, the annular cavities 1012 are respectively arranged in contact with the retaining ring area 1013 and the wafer polishing state simulation wafer 103, the wafer polishing state simulation wafer 103 is used to simulate the wafer polishing state, and the annular cavities 1012 are used to provide pressure for the polishing head 1011; the pressure distribution detection equipment 102 comprises a circular array sensor module 1021 and a signal acquisition module 1022; the circular array sensor module 1021 comprises a microstructure type flexible pressure sensor array 12; the microstructure type flexible pressure sensor array 12 comprises a plurality of sensor units, and the plurality of sensor units are arranged in an array cross distribution to form an induction area of the circular array sensor module 1021; the circular array sensor module 1021 comprises a pressure signal output end and a circular array sensor module starting signal receiving end; the signal acquisition module 1022 comprises a pressure signal receiving end, a pressure acquisition signal output end, a pressure distribution detection starting signal receiving end and a circular array sensor module starting signal output end; the host computer 104 comprises a pressure acquisition signal receiving end and a pressure distribution detection starting signal output end; the pressure distribution detection starting signal output end is connected with the pressure distribution detection starting signal receiving end, the pressure signal output end is connected with the pressure signal receiving end, the circular array sensor module starting signal output end is connected with the circular array sensor module starting signal receiving end, and the pressure acquisition signal output end is connected with the pressure acquisition signal receiving end.

[0054] The circular array sensor module 1021 comprises a microstructure flexible pressure sensor array 12; for example, the microstructure flexible pressure sensor array 12 can be a 64*64 array, comprising 4096 sensor units, and the plurality of sensor units are distributed in an array to form a sensing area of the circular array sensor, which can identify the size and distribution of the normal pressure in different sectors. Compared with the traditional flexible pressure sensor, the application of the microstructure flexible pressure sensor can significantly improve the sensitivity of the sensor, the response to pressure changes is more significant, and the hysteresis error is smaller. At the same time, by using the microstructure flexible pressure sensor array 12, the problem of low measurement accuracy caused by the flexible film grid sensor in the prior art can be effectively avoided. The range of the circular array sensor module 1021 is 0-15 psi, or 0-103 kPa; the resolution is less than 0.05 psi, or 345 Pa; the accuracy error is less than 3%; the detection range is large, the detection accuracy is high, and the accuracy error is small, which can meet the requirements of integrated circuit precision machining. The wafer polishing state simulation wafer 103 is placed under the annular cavity 1012 of the polishing head 1011, the wafer polishing state simulation wafer 103 is used to simulate the state of the wafer polishing, the pressure distribution in the preset wafer polishing process is realized, and the accurate detection of the polishing equipment 101 by the pressure distribution detection equipment 102 is improved. Optionally, the thickness of the wafer polishing state simulation wafer 103 is 750 μm, and the diameter is 12 inches. The wafer polishing state simulation wafer 103 is used to simulate the structure of the wafer, realize the pressure distribution detection in the actual wafer polishing process, and ensure the real-time pressure distribution detection accuracy. The pressure distribution detection equipment 102 further comprises transmission hardware 14, and the transmission hardware 14 comprises a USB interface. The polishing head 1011 is installed on one side of the circular array sensor module 1021, the circular array sensor module 1021 is connected with the signal acquisition module 1022 through a sensor interface 13, and the signal acquisition module 1022 is connected with the host computer 104 through the transmission hardware 14. The specific process of the pressure distribution detection is that the host computer 104 outputs a pressure distribution detection starting signal, receives and outputs a circular array sensor module starting signal through the signal acquisition module 1022, the circular array sensor module 1021 starts, the annular cavity 1012 applies pressure to each area of the polishing head 1011, the signal acquisition module 1022 collects the pressure signal output by the circular array sensor module 1021, and the host computer 104 collects the pressure collection signal output by the signal acquisition module 1022, so as to realize the detection of the pressure distribution. Figure 3 A schematic diagram of a software overall interface of a host computer provided in an embodiment of the present application is shown in Figure 3As shown, the host computer 104 receives, processes and images the collected data through software. The host computer 104 performs fitting processing on the received pressure collection data according to a nonlinear fitting algorithm to obtain pressure value data. The nonlinear fitting algorithm reduces the nonlinear error of the sensor and improves the detection accuracy. The host computer 104 forms a pressure distribution map in real time according to the pressure collection signal. The pressure distribution map can include a 3D image and a heat map. The pressure value data obtained by real-time display of the collected data or the processed collected data through the pressure distribution map can facilitate the technical personnel to view the pressure distribution.

[0055] The pressure distribution detection method specifically includes that the upper computer controls the annular cavity 1012 to exert pressure on the retaining ring area 1013 of the polishing head 1011, and the commonly used pressure is 6.5 psi, and receives the first collection data uploaded by the pressure distribution detection device 102; fitting processing is performed on the first collection data to obtain first pressure value data, and a real-time image of the first pressure value data is presented. Figure 4 A test result graph of the pressure change test of the retaining ring area provided by the embodiment of the utility model, Figure 5 Another test result graph of the pressure change test of the retaining ring area provided by the embodiment of the utility model is as follows, Figure 4 And Figure 5 As shown, when the pressure exerted on the retaining ring area 1013 changes in the range of 0-14 psi, there is a significant change in the output under different pressures; wherein, the pressure value output by the annular cavity 1012 is quite different from the exerted pressure, and the possible reason is that the area of the exerted pressure of the retaining ring area 1013 is inconsistent with the actual contact area of the sensor, resulting in a difference between the exerted pressure and the interfacial pressure.

[0056] After the pressure exerted on the retaining ring area 1013 is emptied, the control annular cavity 1012 exerts pressure on other specified sectors of the polishing head 1011, and receives the second collection data uploaded by the pressure distribution detection device 102. Figure 6 A test result graph of the first area to the seventh area of the polishing head provided by the embodiment of the utility model is as follows, Figure 6 As shown, wherein the other specified sectors include the first area to the seventh area, wherein the commonly used pressure exerted on the first area to the seventh area is 4 psi. The second collection data is fitted and processed to obtain second pressure value data, and a real-time image of the second pressure value data is presented. Figure 7 A schematic diagram of the minimum resolution test result of the first area provided by the embodiment of the utility model is as follows, Figure 7 As shown, the pressure exerted on the first area is first increased from 0 to 0.06 psi, and then the pressure is increased at a change rate of 0.03 psi / time. The circular array sensor module 1021 in the embodiment of the utility model can identify the pressure change.Figure 8 A schematic diagram of the minimum resolution test result of the sixth area provided by the embodiment of the utility model is shown in the figure, Figure 8 As shown, 19 times of 4.03psi pressure is continuously applied to the sixth area to calculate the error. The sensor accuracy meets the formula Wherein U1 is the system error, U2 is the random error, Y Fs is the full-scale output value of static calibration. Figure 9 A box plot of the pressure value of the sixth area provided by the embodiment of the utility model is shown in the figure, Figure 9 As shown, the average value of 19 times of 4.03psi pressure test is 3.85psi, the maximum value is 4.01psi, and the minimum value is 3.70psi. Figure 10 A schematic diagram of the 4psi continuous test result of the sixth area provided by the embodiment of the utility model is shown in the figure, Figure 11 A schematic diagram of another 4psi continuous test result of the sixth area provided by the embodiment of the utility model is shown in the figure, Figure 10 and Figure 11 As shown, according to the average value and the maximum value and the minimum value of the test, the measurement error of the pressure distribution detection system of the embodiment is-1.02%-1.1%; according to the input value as the average value to calculate the error, the error is-2.18%-0.14%, and the test accuracy of the pressure distribution detection device for the polishing equipment 101 can reach less than 3%.

[0057] For the difference of different polishing heads 1011 in the pressure distribution detection process, the polishing head 1011 with good performance is selected by comparison and applied to the pressure distribution detection device for the polishing equipment 101, so as to ensure the detection accuracy of the pressure distribution detection device for the polishing equipment 101. The pressure distribution detection device for the polishing equipment 101 also includes a performance comparison module, which can be built-in in the upper computer 104. The performance comparison module is used to compare the test results of different polishing heads, so as to select the polishing head 1011 with good performance. Figure 12 A schematic diagram of the 4psi test result of the first area by the first polishing head provided by the embodiment of the utility model is shown in the figure, Figure 12 As shown, the actual pressure applied in the first area is 1.230psi. Figure 13 A schematic diagram of the 4psi test result of the first area by the second polishing head provided by the embodiment of the utility model is shown in the figure, Figure 13 As shown, the actual pressure applied in the first area is 0.6940psi. Figure 14 A comparison schematic diagram of the 4psi test result of each area in the first polishing head and the second polishing head provided by the utility model is shown in the figure, Figure 14As shown, compared with the first polishing head 1011, the performance of the annular cavity membrane of the second polishing head 1011 is poor.

[0058] The embodiment of the utility model discloses a polishing head and circular array sensor module connection, through annular cavity to press, so that the circular array sensor can carry out real -time pressure distribution detection to each area of polishing head, and the circular array sensor module includes microstructure type flexible pressure sensor array, utilizes the circular array that a plurality of sensor unit array cross distribution is suitable for the pressure detection of polishing equipment, is not easy to warp, and then effectively improve the detection precision.

[0059] Optionally, with reference to Figure 1 , the pressure distribution detection equipment 102 further includes a calibration module; the calibration module includes a preset pressure output end, a force-electricity curve receiving end and a calibration signal output end; the polishing head 1011 includes a preset pressure receiving end; the pressure distribution detection equipment 102 includes a force-electricity curve output end; the circular array sensor module 1021 includes a calibration signal receiving end; the preset pressure output end and the preset pressure receiving end are connected, and the force-electricity curve output end and the force-electricity curve receiving end are connected; the calibration signal output end and the calibration signal receiving end are connected. The calibration module further includes: air source, external pressure regulating table, sealed cavity, cavity pressure detection table and several connecting pipelines; wherein, the calibration device is used to apply uniform pressure to different positions of the sensor unit.

[0060] As shown in the figure, Figure 15 A force-electricity curve diagram in the calibration process provided by the embodiment of the utility model, Figure 16 Another force-electricity curve diagram in the calibration process provided by the embodiment of the utility model, as shown in Figure 15 And Figure 16 As shown, each sensor unit has a specific force-electricity curve, by applying a preset and uniform pressure, the force-electricity curve of each sensor unit is obtained, which is used for subsequent measurement. Before the pressure distribution detection equipment 102 applies pressure to the holding ring area 1013 of the polishing head 1011 through the annular cavity 1012, the calibration module is used to apply a preset pressure to each area of the polishing head 1011, and simultaneously receives the force-electricity curve uploaded by the pressure distribution detection equipment 102, the calibration signal output end of the calibration module is connected with the calibration signal receiving end of the circular array sensor module 1021, and the calibration module calibrates the electric signal output by the circular array sensor module 1021 according to the force-electricity curve, so that the pressure output by each sensor unit in the circular array sensor module 1021 corresponds to the preset pressure, and the detection precision is improved.

[0061] Optionally, with reference to Figure 1The signal acquisition module 1022 at least includes an artifact elimination circuit and a micro control unit; the artifact elimination circuit is used for virtually isolating the measured resistance in the circular array sensor module 1021; the micro control unit includes an artifact elimination circuit pressure acquisition signal output end, a pressure acquisition signal output end, a pressure distribution detection start signal receiving end and a circular array sensor module start signal output end; the upper computer 104 further includes an artifact elimination circuit pressure acquisition signal receiving end; the artifact elimination circuit pressure acquisition signal output end and the artifact elimination circuit pressure acquisition signal receiving end are connected.

[0062] Specifically, the artifact elimination circuit and the micro control unit are connected, and the micro control unit is further connected with the upper computer 104 and the circular array sensor module 1021. The artifact elimination circuit at least includes a power supply, a standard resistance, a plurality of operational amplifiers and a plurality of switches; the power supply is connected with the standard resistance, the operational amplifiers and the plurality of switches respectively. After the power supply of the artifact elimination circuit is turned on, the current ratio and the voltage ratio of the standard resistance and the measured resistance are kept known. The measured resistance in the circular array sensor module 1021 is virtually isolated through the artifact elimination circuit, the interference of the adjacent resistances in the micro-structure flexible pressure sensor array 12 on the measured resistance is eliminated, the artifact elimination is realized, and the detection accuracy of the system is improved.

[0063] Optionally, the on-resistance of the plurality of switches is less than or equal to 4Ω. By setting the on-resistance of the plurality of switches to be small, the scanning detection of the circular array sensor module 1021 can be closer to the ideal state.

[0064] Optionally, the sampling frequency of the pressure distribution detection equipment 102 is 50Hz. Through the higher sampling frequency, the real-time acquisition of the pressure distribution of each region of the probe is further realized.

[0065] Optionally, Figure 17 Another structure schematic view of the pressure distribution detection device for the polishing equipment provided by the embodiment of the utility model is shown as Figure 17 The pressure distribution detection system for the polishing equipment further includes a polishing leak detection device 105; the polishing leak detection device 105 includes a flat base 1051; the circular array sensor module 1021 is located between the flat base 1051 and the wafer polishing state simulation silicon wafer 103; the polishing leak detection device 105 is connected with the annular cavity 1012, so as to realize the detection of whether the annular cavity 1012 leaks by the polishing leak detection device 105.

[0066] Optionally, referring to Figure 1 and Figure 2The polishing leak detection device 105 further comprises a fixing unit 1052 connected with the polishing head 1011, the circular array sensor module 1021 and the flat base 1051 respectively. The fixing unit 1052 is used to fix the connection relationship among the polishing head 1011, the circular array sensor module 1021 and the flat base 1051, so that the system is not affected by the outside during the pressure distribution detection. Meanwhile, the pressure distribution detection can be synchronized with the conventional maintenance of the polishing equipment 101, the actual pressure distribution of each area of the polishing head 1011 can be displayed in real time, the corresponding relationship between the gas pressure and the actual pressure can be established, and the membrane failure of the annular cavity of the polishing head 1011 can be found during the polishing process, so that the subsequent precision processing of the wafer is ensured.

[0067] Based on the same inventive concept, the embodiment of the present application provides a pressure distribution detection device for the polishing equipment 101, which is used to execute the pressure distribution detection system for the polishing equipment according to any one of the embodiments of the present application. Therefore, the pressure distribution detection device for the polishing equipment 101 provided by the embodiment of the present application comprises the technical features of the pressure distribution detection system for the polishing equipment provided by any one of the embodiments of the present application, and can achieve the beneficial effects of the pressure distribution detection system for the polishing equipment provided by any one of the embodiments of the present application. The same parts can be referred to the description of the pressure distribution detection system for the polishing equipment provided by the embodiment of the present application, and will not be described here.

[0068] The above specific embodiments do not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A pressure distribution detection system for a polishing apparatus, characterized by, The application relates to a polishing device, a pressure distribution detection device, a wafer polishing state simulation silicon wafer and an upper computer. The polishing device comprises a polishing head, a base of the polishing head comprises a plurality of annular cavities and a retaining ring area at the edge of the base, the annular cavities are respectively arranged in contact with the retaining ring area and the wafer polishing state simulation silicon wafer, the wafer polishing state simulation silicon wafer is used for simulating the wafer polishing state, and the annular cavities are used for providing pressure for the polishing head. The pressure distribution detection device comprises a circular array sensor module and a signal acquisition module; the circular array sensor module comprises a microstructure type flexible pressure sensor array; the microstructure type flexible pressure sensor array comprises a plurality of sensor units, and the plurality of sensor units are distributed in an array to form a sensing area of the circular array sensor module. The circular array sensor module comprises a pressure signal output end and a circular array sensor module starting signal receiving end. The signal acquisition module comprises a pressure signal receiving end, a pressure acquisition signal output end, a pressure distribution detection starting signal receiving end and a circular array sensor module starting signal output end. The upper computer comprises a pressure acquisition signal receiving end and a pressure distribution detection starting signal output end. The pressure distribution detection starting signal output end is connected with the pressure distribution detection starting signal receiving end, the pressure signal output end is connected with the pressure signal receiving end, the circular array sensor module starting signal output end is connected with the circular array sensor module starting signal receiving end, and the pressure acquisition signal output end is connected with the pressure acquisition signal receiving end. The pressure distribution detection device further comprises a calibration module.

2. The pressure distribution detection system for a polishing apparatus according to claim 1, wherein The calibration module comprises a preset pressure output end, a force-electricity curve receiving end and a calibration signal output end. The polishing head comprises a preset pressure receiving end. The pressure distribution detection device comprises a force-electricity curve output end. The circular array sensor module comprises a calibration signal receiving end. The preset pressure output end is connected with the preset pressure receiving end, and the force-electricity curve output end is connected with the force-electricity curve receiving end. The calibration signal output end is connected with the calibration signal receiving end. The signal acquisition module at least comprises an artifact elimination circuit and a micro control unit.

3. The pressure distribution detection system for a polishing apparatus according to Claim 1, wherein The artifact elimination circuit is used for virtually isolating a measured resistance in the circular array sensor module. The micro control unit comprises an artifact elimination circuit pressure acquisition signal output end, a pressure acquisition signal output end, a pressure distribution detection starting signal receiving end and a circular array sensor module starting signal output end. The upper computer further comprises an artifact elimination circuit pressure acquisition signal receiving end. The artifact elimination circuit pressure acquisition signal output end is connected with the artifact elimination circuit pressure acquisition signal receiving end. The artifact elimination circuit at least comprises a power supply, a standard resistance, a plurality of operational amplifiers and a plurality of switches; the power supply is connected with the standard resistance, the operational amplifiers and the plurality of switches respectively.

4. The pressure distribution detection system for a polishing apparatus according to Claim 3, wherein The on-resistance of the plurality of switches is less than or equal to 4Ω.

5. The pressure distribution detection system for a polishing apparatus according to claim 4, wherein The sampling frequency of the pressure distribution detection device is 50Hz.

6. The pressure distribution detection system for a polishing apparatus according to Claim 1, wherein ​ 7. The pressure distribution detection system for a polishing apparatus according to Claim 1, wherein The pressure distribution detection system for the polishing equipment further comprises a polishing leak detection device; The polishing leak detection device comprises a flat base; the circular array sensor module is located between the flat base and the wafer polishing state simulation silicon wafer; the polishing leak detection device is connected with the annular cavity.

8. The pressure distribution detection system for a polishing apparatus according to Claim 7, wherein The polishing leak detection device further comprises a fixing unit, which is connected with the polishing head, the circular array sensor module and the flat base respectively.

9. The pressure distribution detection system for a polishing apparatus according to Claim 1, wherein The thickness of the wafer polishing state simulation silicon wafer is 750 μm, and the diameter is 12 inches.

10. A pressure distribution detection device for a polishing apparatus, characterized by comprising: The pressure distribution detection system for the polishing equipment comprises the polishing leak detection device.

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