Epitaxial structure for manufacturing RGB (Red, Green, Blue) InGaN-based micro LED (Light Emitting Diode) on same chip and assembly manufactured by epitaxial structure

Abstract

The utility model discloses an epitaxial structure for manufacturing an RGB (Red, Green, Blue) InGaN-based micro LED (Light Emitting Diode) on the same chip. The epitaxial structure comprises a flat substrate; a two-dimensional material layer is arranged on the surface of the substrate; a Van der Waals epitaxial InxAlyGa1-x-yN buffer layer is arranged on the surface of the two-dimensional material layer; an RGB InGaN LED stack epitaxial structure is arranged on the surface of the buffer layer, and the RGB InGaN LED stack epitaxial structure sequentially comprises a blue light emitting diode epitaxial structure, a green light emitting diode epitaxial structure and a red light emitting diode epitaxial structure which are provided with InGaN multiple quantum well light emitting layers from bottom to top. The stack epitaxial structure can be manufactured into a majority of independently distributed blue-green-red InGaN micro LED components distributed on the same chip or substrate without a huge transfer process, a redundant repair design is introduced for the light-emitting component, the complexity and cost of a subsequent repair process are greatly reduced, the yield is effectively improved, and the production cost is reduced. And a control assembly is configured on the same chip or substrate to form a micro LED display or communication device.

Description

TECHNICAL FIELD

[0001] The utility model relates to make the epitaxial structure of RGB InGaN base micro LED on the same chip and the assembly made by the epitaxial structure. BACKGROUND

[0002] With the progress of the times, the display becomes lighter, thinner, more power saving, and the mainstream technology of the display has gradually changed from the cathode ray tube (Cathode Ray Tube, CRT) display, LCD to the emerging OLED display, and the Micro LED display actively invested by various countries in recent years has superior characteristics and feasibility, and under the leadership of international leading manufacturers and the active participation of the industry, it is expected to become the mainstream technology of the next generation of displays. The Micro LED technology shrinks the traditional LED size of general millimeter (10 -3 m) to below 100 microns (10 -6 m), which is 1% of the original LED volume. Through the mass transfer technology, the micron-level RGB three-color Micro LED grown on the epitaxial substrate (also known as the original substrate or homogeneous substrate) is transferred to the display substrate (also known as the target substrate), and the matrix arrangement of RGB pixels is controlled by addressing to achieve full colorization to form a Micro LED display.

[0003] Micro LED has superior characteristics compared to LCD and OLED. First, from the structure, LCD needs a backlight module as a light source because it is not self-luminous, and the liquid crystal molecules need to be combined with polarizing plates and color filters to control the brightness and colorization of light polarization. Therefore, it has a relatively complex and heavy structure. OLED has the characteristic of pixel self-luminous, which can save the backlight module of TFT LCD. However, the organic light-emitting material is sensitive to moisture, so it needs to form a sealed structure with the upper and lower substrates to enhance its environmental resistance. Micro LED uses inorganic LED as pixels and does not have the packaging problem of OLED. Compared with the above, the composition of Micro LED is the simplest and can make the thinnest structure. Traditional LED plays the role of backlight source in TFT LCD display, and when it evolves to Micro LED display, Micro LED directly serves as a light-emitting pixel. From the characteristics, Micro LED has many excellent characteristics such as self-luminous, low power consumption, fast response time, high brightness, ultra-high contrast, wide color gamut, wide viewing angle, ultra-thin, long service life and adaptation to various working temperatures. The technical specifications of Micro LED have overwhelming advantages compared to LCD and OLED.

[0004] The aforementioned must be carried out after the epitaxial process is completed, Micro LED transfer process, transfer millions of micron level Micro LED to the display substrate, called the mass transfer technology; if the transfer process cannot be effectively completed in a reasonable time, it cannot be mass-produced, and the required single transfer quantity and high precision of picking and placing are not found in the current mass production technology, so the first key challenge in the development of Micro LED display is mass transfer, which aims to accurately transfer millions to tens of millions of micron level Micro LED from the epitaxial substrate to the display substrate in a reasonable time. It is strange and difficult for the existing LED or LCD industry to develop new transfer technology, and the transfer technology is highly related to epitaxy, repair, and equipment patent technology. To some extent, different transfer technologies are matched with corresponding epitaxy, repair, and equipment technology, so the transfer technology is a key technology in the development of Micro LED display technology. The micron level Micro LED manufactured by mass transfer technology includes mass transfer and corresponding detection and repair processes, which are complex and challenging, both technically difficult and the main reason for the cost of manufacturing still to be improved; if the existing obstacles are overcome technically, RGB three LED components or at least two components are manufactured on the same epitaxial substrate, and the layout is according to the demand of finished product, which will effectively jump out or simplify the mass transfer process.

[0005] In the manufacturing process of Micro-LED displays, red, green and blue (RGB) three-color light-emitting diodes are used to form the pixels of the unit. Currently, the main manufacturing technology needs to mix nitride and phosphide light-emitting diodes to meet the three primary color requirements. When different material systems are mixed, different heat and decay characteristics directly affect the quality of image presentation; different electrical driving characteristics directly lead to the complexity of display module driving design. Therefore, if the same material system is used to realize direct light-emitting RGB three-color light-emitting diodes, it will not only help to solve the above problems, but also reduce the process complexity and energy efficiency loss caused by color light conversion mechanism, which will be beneficial to the development of Micro LED technology. Indium gallium nitride (InxGa1-xN) epitaxial material is one of the main materials for manufacturing blue light-emitting diodes. In theory, it can cover the entire visible light range by adjusting the indium gallium solid solution ratio. Indium gallium nitride is expected to have better light-emitting efficiency due to its direct energy gap characteristics, especially for blue light mass production technology. Therefore, it receives more attention than other material systems, and has great potential in manufacturing direct RGB light-emitting diodes (RGB direct LED) with similar control conditions and good efficiency. However, the substrate currently used in InxGa1-xN epitaxial material green and red light-emitting diodes faces technical bottlenecks. In order to achieve the appropriate green and red light-emitting wavelength, the In content of the InxGa1-xN epitaxial material needs to be increased. In the epitaxial manufacturing process, the In content must be increased by reducing the epitaxial temperature, which faces obstacles such as non-compliance with application specifications. Therefore, in 2017, Soitec Company of France announced the development of a substrate material suitable for the above purpose. In the same year, the company released a direct green light-emitting diode (direct green LED) successfully manufactured using the substrate. The company announced that the surface lattice constant of the developed substrate can reach 0.3205 nanometers (nm), and the surface layer is a stress-relieving In x Ga 1-xN-layer; in 2018, the company successfully fabricated a direct green LED; the highest lattice constant of the substrate announced by the company remains unchanged at 0.3205 nanometers (nm); while the company's substrate development has yielded concrete results, the complex and intricate manufacturing process and high manufacturing cost may hinder its widespread market adoption. The results also demonstrate that the substrate lattice constant is one of the keys to successfully realizing InxGa1-xN direct green / red LEDs, namely the latticepulling effect mentioned in most studies. In epitaxial In... x Ga 1-x When the lattice constant of the substrate or lower layer increases from the GaN end to the InN end, the In content ratio of the epitaxial layer is improved; this effect can also be used to maintain the same In content. x Ga 1-x Increasing the In content of the N epitaxial layer while simultaneously increasing the epitaxial temperature can improve the crystal quality and luminescence performance of the epitaxial layer.

[0006] Therefore, using 2D layered materials to cover the surface of the substrate material as In x Ga 1-x By applying van der Waals epitaxy or quasi-van der Waals epitaxy techniques to the interlayer of N-epitaxial epitaxy, stress or strain energy arising from lattice and thermal expansion mismatch during the epitaxial process can be alleviated to some extent. This allows for the achievement of high-quality, high-In-content In on currently available substrate surfaces. x Ga 1-x N-phase epitaxy enables high-efficiency direct green / red LEDs. When the outermost layer of the 2D layered material uses MoSe2 or WSe2, the lattice constant can reach 0.3283nm or 0.3297nm, respectively. This provides an epitaxial layer perfectly matched to the red light emission range, ensuring epitaxial quality and potentially simplifying epitaxial and component manufacturing processes. The entire LED process, from the n-electrode and multiple quantum well (MQW) to the p-electrode, is entirely based on In... x Ga 1-x The N-layer epitaxial structure will enable the realization of high-quality direct green / red light-emitting diodes. Simultaneously, a nitride layer containing Al, In, or Ga with precisely adjusted lattice constant can be further deposited on the surface of the 2D layered material as the top layer of the epitaxial layer / intermediate layer, which, in addition to enhancing the In... x Ga 1-xIn addition to the epitaxial nucleation of N, an adjustment of the epitaxial process parameters is also added, which can effectively adjust the In x Ga 1-x The temperature required for the epitaxial process of N is adjusted, and the parameters such as the epitaxial process temperature of blue-green-red InGaN light-emitting diodes are optimized on the same buffer layer / 2D layer surface, and then the blue-green-red InGaN light-emitting diode epitaxial structure is sequentially completed in the same MOCVD batch to form a vertical stack. According to the epitaxial process temperature requirements of blue-green-red InGaN light-emitting diodes, the vertical stack should be performed from high temperature to low temperature, that is, the blue-green-red InGaN light-emitting diodes are sequentially stacked. The introduction of a tunnel junction (TJ) formed by a high-doped thin layer between the blue-green-red InGaN light-emitting diode epitaxial structures will enable the electrical series connection of the blue-green-red InGaN light-emitting diodes, making it possible to vertically stack blue-green-red light-emitting diodes on the same platform (mesa), which has the potential effect of reducing the pitch of pixels; placing the tunnel junction on the top of the p-doped layer of the light-emitting diode has the effect of dispersing the current and is beneficial to the manufacture of the p-side electrode.

[0007] Based on the application of the foregoing technology, the epitaxial process of two or three InGaN LED components can be completed in the same MOCVD batch on the same epitaxial chip. By using a process similar to a mature light-emitting diode process, the remaining processes required for the blue-green-red light-emitting diode components can be performed after the epitaxial process is completed, which makes it possible to complete two or three InGaN LED components on the same epitaxial chip at the same time. In this way, the mass transfer process can be effectively reduced; after the completion of the planar distribution or vertical stack of blue-green-red light-emitting diode components, the manufacturing process of control components such as TFTs can be directly performed on the same epitaxial chip, which effectively reduces the process and improves the problem of separately bonding control components, and can also greatly reduce the cost of micro LED displays or communication devices.

[0008] Based on current micro LED technology practices, the area occupied by the light-emitting components in a micro LED device may be far less than 50%. Therefore, the planar layout will have room to accommodate modules such as touch or sensing. Thus, assuming it is feasible to fabricate two or three InGaN LED components on the same epitaxial chip, it will also be feasible to incorporate commonly used redundancy repair concepts such as Dynamic Random Access Memory (DRAM) into the light-emitting components. This will significantly reduce the complexity and cost of subsequent repair processes and effectively improve yield. The method involves fabricating multiple blue, green, and red InGaN light-emitting diode components in each pixel and incorporating repair circuitry into the control circuitry, performing repair during the detection and repair stage. This will make it possible to move towards integrated circuitry in micro LED manufacturing processes and will also enable more efficient integration of control circuit components with touch or sensing modules.

[0009] Existing processes such as Figure 1 As shown: Blue, green, and red LED micro LED chips are fabricated separately. A large number of blue, green, and red LED chips are separated from the epitaxial chip, and after a picking and placing process, they are transferred in large quantities to the display substrate. Then, the micro LED chips are tested and repaired. Utility Model Content

[0010] The purpose of this invention is to provide an epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip and the components thereof.

[0011] To achieve the above objectives, the technical solution of this utility model is as follows:

[0012] An epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip, comprising:

[0013] A flat substrate;

[0014] A two-dimensional material layer is present on the surface of the substrate;

[0015] In with van der Waals epitaxy on the surface of a two-dimensional material layer x Al y Ga 1-x-y N (x = 0-1, y = 0-1) buffer layers;

[0016] An RGB InGaN LED stack epitaxial structure is present on the surface of the buffer layer. This RGB InGaN LED stack epitaxial structure includes, from bottom to top:

[0017] An epitaxial structure of a blue light-emitting diode with an InGaN multi-quantum-well light-emitting layer;

[0018] An epitaxial structure of a green light-emitting diode with an InGaN multi-quantum-well light-emitting layer;

[0019] An epitaxial structure of a red light-emitting diode with an InGaN multi-quantum-well light-emitting layer.

[0020] Furthermore, outside the InGaN multi-quantum-well emissive layers of the blue, green, and red light-emitting diode epitaxial structures, respectively, are n, pIn... x Al y Ga 1-x-y N-epitaxy layer.

[0021] Furthermore, the n,pIn relationship between the blue light-emitting diode epitaxial structure and the green light-emitting diode epitaxial structure is... x Al y Ga 1-x-y A tunnel junction is formed by heavily doping the outermost layer on at least one side of the N epitaxial layer, and a tunnel junction is formed between the green light-emitting diode epitaxial structure and the red light-emitting diode epitaxial structure by heavily doping the outermost layer on at least one side of the n,p epitaxial layer.

[0022] Furthermore, in the blue, green, and red LED epitaxial structures, the n and p epitaxial layers are all composed of InGaN, and are stacked from bottom to top on the surface of the buffer layer in the order of blue, green, and red LEDs, the n epitaxial layer, the multiple quantum wells, and the p epitaxial layer. Even further, at least one side of the outermost layer of the n and p epitaxial layers between the blue and green LED epitaxial structures forms a tunnel junction through heavy doping, and at least one side of the outermost layer of the n and p epitaxial layers between the green and red LED epitaxial structures also forms a tunnel junction through heavy doping.

[0023] The two-dimensional material layer is selected from hBN, graphene, or two-dimensional transition metal dichalcogenides (TMDs) or combinations thereof.

[0024] Furthermore, the RGB InGaN LED stack epitaxial structure is used to fabricate planar distributions on the same chip (wafer) or substrate, which have several independently distributed RGB InGaN-based micro LED components, and has a redundancy repair design for the light-emitting components.

[0025] Furthermore, an RGB InGaN-based micro LED assembly, fabricated using an RGB InGaN LED stack epitaxial structure, is formed by planar distribution on the same chip (wafer) or substrate, consisting of several vertically stacked RGB InGaN-based micro LED components, and includes a redundancy repair design for the light-emitting components.

[0026] Furthermore, the RGB InGaN-based micro LED assembly can be configured with control components on the same chip (wafer) or substrate to form a micro LED display or communication device.

[0027] After adopting the above solution, this utility model has a two-dimensional material layer and van der Waals epitaxy In x Al y Ga 1-x-y Epitaxial processes for RGB (red, green, blue) InGaN LED components are completed on the same epitaxial chip with an N (x = 0-1, y = 0-1) buffer layer, forming a stacked epitaxial structure. This stacked epitaxial structure allows for the fabrication of numerous independently distributed blue, green, and red InGaN micro LED components on the same chip (wafer) or substrate without mass transfer processes. Redundancy repair design is incorporated into the light-emitting components, significantly reducing the complexity and cost of subsequent repair processes and effectively improving yield. Control components are then configured on the same chip (wafer) or substrate to form micro LED display or communication devices. Attached Figure Description

[0028] Figure 1 This is the existing process flow diagram;

[0029] Figure 2 This is a schematic diagram of the extensional structure of Embodiment 1 of this utility model;

[0030] Figure 3 This is a schematic diagram of the extensional structure of Embodiment 2 of this utility model;

[0031] Figure 4 This is a schematic diagram of the extensional structure of Embodiment 3 of this utility model;

[0032] Figure 5 This is a schematic diagram of the extensional structure of Embodiment 4 of this utility model;

[0033] Figure 6This is a schematic diagram of the extensional structure of Embodiment 5 of this utility model;

[0034] Figure 7 This is a schematic diagram of the component structure of Embodiment Six of this utility model;

[0035] Figure 8 This is a schematic diagram of the component structure of Embodiment 7 of this utility model.

[0036] Label Explanation

[0037] Substrate 1; Two-dimensional material layer 2; Buffer layer 3; Blue light-emitting diode epitaxial structure 4; Green light-emitting diode epitaxial structure 5; Red light-emitting diode epitaxial structure 6; Multiple quantum well light-emitting layers 41, 51, 61; Epitaxial layers 42, 43, 52, 53, 62 and 63; Tunnel junctions 44, 54, 55 and 64; Current dispersing layer 7; Electrode 8. Detailed Implementation

[0038] like Figure 2 As shown in Embodiment 1 of this utility model, an epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip includes a flat substrate 1; a two-dimensional material layer 2 is present on the surface of the substrate 1, wherein the two-dimensional material layer 2 is selected from hBN, graphene, or two-dimensional transition metal chalcogenides or combinations thereof; and van der Waals epitaxial InGaN atoms are present on the surface of the two-dimensional material layer 2. x Al y Ga 1-x-y N(x=0-1,y=0-1) buffer layer 3; RGB InGaN LED stack epitaxial structure is present on the surface of buffer layer 3. This RGB InGaN LED stack epitaxial structure includes, from bottom to top: a blue light-emitting diode epitaxial structure 4 with an InGaN multiple quantum well (MQW) light-emitting layer, a green light-emitting diode epitaxial structure 5 with an InGaN multiple quantum well light-emitting layer, and a red light-emitting diode epitaxial structure 6 with an InGaN multiple quantum well light-emitting layer.

[0039] like Figure 3 As shown, the difference between Embodiment 2 and Embodiment 1 of this utility model is that, in addition to the InGaN multiple quantum well light-emitting layers 41, 51, and 61 of the blue light-emitting diode epitaxial structure 4, the green light-emitting diode epitaxial structure 5, and the red light-emitting diode epitaxial structure 6, n, p In are respectively present. x Al y Ga 1-x-y N-eptaxial layers 42 and 43, 52 and 53, 62 and 63.

[0040] like Figure 4As shown, the difference between Embodiment 3 and Embodiment 2 of this utility model is that: the blue light-emitting diode epitaxial structure 4, the green light-emitting diode epitaxial structure 5, and the red light-emitting diode epitaxial structure 6 respectively have InGaN multiple quantum well light-emitting layers 41, 51, 61 and n,pIn. x Al y Ga 1-x-y Beyond the N-epitaxy layers 42 and 43, 52 and 53, 62 and 63, and further between the blue light-emitting diode epitaxial structure 4 and the green light-emitting diode epitaxial structure 5, n,p In x Al y Ga 1-x-y Tunnel junctions 44 and 54 are formed by heavy doping on the outermost layers on both sides of the N epitaxial layers 43 and 52, and tunnel junctions 55 and 64 are formed by heavy doping on the outermost layers on both sides of the n,p epitaxial layers 53 and 62 between the green light-emitting diode epitaxial structure 5 and the red light-emitting diode epitaxial structure 6.

[0041] like Figure 5 As shown, the difference between Embodiment 4 and Embodiment 2 of this utility model is that the n and p epitaxial layers 42 and 43, 52 and 53, and 62 and 63 in the blue light-emitting diode epitaxial structure 4, the green light-emitting diode epitaxial structure 5, and the red light-emitting diode epitaxial structure 6 are all composed of InGaN, and are stacked from bottom to top on the surface of the buffer layer 3 in the order of blue, green and red light-emitting diodes, n epitaxial layer, multiple quantum wells, and p epitaxial layer.

[0042] like Figure 6 As shown, the difference between Embodiment 5 and Embodiment 4 of this utility model is that: a tunnel junction 44 is formed by heavy doping on the outermost layer of the n,p epitaxial layers 43 and 52 between the blue light-emitting diode epitaxial structure 4 and the green light-emitting diode epitaxial structure 5, and a tunnel junction 55 is formed by heavy doping on the outermost layer of the n,p epitaxial layers 53 and 62 between the green light-emitting diode epitaxial structure 5 and the red light-emitting diode epitaxial structure 6.

[0043] like Figure 7 As shown, Embodiment Six of this utility model discloses an RGB InGaN-based micro LED component, which adopts... Figure 6 The RGB InGaN LED stack epitaxial structure shown in Embodiment 5 is fabricated and planarly distributed on the same chip or substrate 1, having several independently distributed RGB InGaN-based micro LED components. It is then etched to fabricate a current dispersing layer 7 and electrodes 8, and has a backup repair design for the light-emitting components.

[0044] like Figure 8 As shown, Embodiment Seven of this utility model discloses an RGB InGaN-based micro LED component, which adopts... Figure 6The RGB InGaN LED stack epitaxial structure shown in Embodiment 5 is fabricated and planarly distributed on the same chip or substrate 1, having several vertically stacked RGB InGaN-based micro LED components. Then, it is etched to fabricate a current dispersing layer 7 and electrodes 8, etc., and has a redundancy repair design for the light-emitting components.

[0045] One manufacturing process of this utility model is as follows:

[0046] N1. The material of the starting substrate 1 is a polished C-side sapphire chip that meets the epitaxial growth level, which is then subjected to appropriate pretreatment (including chip cleaning) as preparation for subsequent manufacturing processes.

[0047] N2, using existing manufacturing processes to grow 2D WSe2 thin layers (two-dimensional material layer 2);

[0048] N3, sputtering deposition of In x Al y Ga 1-x-y N buffer layer 3;

[0049] N4, MOCVD performs vertical stacking epitaxial processes on the blue, green, and red InGaN light-emitting diodes in sequence, forming blue light-emitting diode epitaxial structure 4, green light-emitting diode epitaxial structure 5, and red light-emitting diode epitaxial structure 6. It also includes highly doped In between the blue-green and green-red light-emitting diode epitaxial structures. x Al y Ga 1-x-y N-tunnel junction;

[0050] N5. Using typical processes including mesa etching and fabrication of red light-emitting diode ITO current dispersing layer 7 and blue, green and red InGaN light-emitting diode electrodes 8, a blue, green and red InGaN micro LED component is fabricated with multiple components planarly distributed on the same chip and vertically stacked.

[0051] N6. Bond to a separately fabricated substrate containing driving components and circuitry; desorb or remove the original epitaxial chip;

[0052] N7. Complete micro LED display or communication devices.

[0053] Another manufacturing process of this utility model is as follows:

[0054] M1. Using a single-crystal silicon chip as the starting substrate material, appropriate pretreatment (including chip cleaning) is carried out as preparation for subsequent manufacturing processes.

[0055] M2. A 2D hBN thin layer (two-dimensional material layer 2) is grown on the surface of the C-side sapphire chip using existing manufacturing processes, and the hBN thin layer is transferred to the surface of the preceding single-crystal silicon chip.

[0056] M3, sputtering deposition of In x Al 1-x N buffer layer 3 is applied to the surface of the hBN thin layer;

[0057] In M4, MOCVD performs vertical stacking epitaxial processes on blue, green, and red InGaN LEDs in sequence, forming blue LED epitaxial structure 4, green LED epitaxial structure 5, and red LED epitaxial structure 6. It also includes highly doped In between the blue-green and green-red LED epitaxial structures. x Ga 1-x The N-tunnel junction, and the top surface of the epitaxial structure of the red light-emitting diode also has a tunnel junction;

[0058] M5, using typical processes including mesa etching and fabrication of blue, green and red electrodes 8 for light-emitting diodes, to produce multiple independently distributed blue, green and red InGaN micro LED components that are planarly distributed on the same chip.

[0059] M6, and separately fabricate driver components and circuits on the same chip;

[0060] M7. Conduct tests on the blue, green, and red LED components and repair them using backup blue, green, and red LED components (e.g., using organizations such as efuse for repair).

[0061] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of this utility model. It should be noted that any equivalent changes made by those skilled in the art after reading this specification, based on the design concept of this application, fall within the protection scope of this application.

Claims

1. An epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip, characterized in that... include: A flat substrate; A two-dimensional material layer is present on the surface of the substrate; In with van der Waals epitaxy on the surface of a two-dimensional material layer x Al y Ga 1-x-y N buffer layers, x = 0-1, y = 0-1; An RGB InGaN LED stack epitaxial structure is present on the surface of the buffer layer. This RGB InGaN LED stack epitaxial structure includes, from bottom to top, the following: An epitaxial structure of a blue light-emitting diode with an InGaN multiple quantum well light-emitting layer; An epitaxial structure of a green light-emitting diode with an InGaN multiple quantum well light-emitting layer; An epitaxial structure of a red light-emitting diode with an InGaN multiple quantum well light-emitting layer.

2. The epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 1, characterized in that: The InGaN multi-quantum-well light-emitting layers of the blue, green, and red light-emitting diode epitaxial structures respectively have n, p In... x Al y Ga 1-x-y N-epitaxy layer, x = 0-1, y = 0-1.

3. The epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 2, characterized in that: A tunnel junction is formed by heavy doping on at least one side of the outermost layer of the n,p epitaxial layer between the blue light-emitting diode epitaxial structure and the green light-emitting diode epitaxial structure, and a tunnel junction is formed by heavy doping on at least one side of the outermost layer of the n,p epitaxial layer between the green light-emitting diode epitaxial structure and the red light-emitting diode epitaxial structure.

4. The epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 2, characterized in that: In the blue, green, and red light-emitting diode epitaxial structures, the n and p epitaxial layers are all composed of InGaN, and are stacked from bottom to top on the surface of the buffer layer in the order of blue, green, and red light-emitting diodes, n epitaxial layer, multiple quantum wells, and p epitaxial layer.

5. The epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 4, characterized in that: A tunnel junction is formed by heavy doping on at least one side of the outermost layer of the n,p epitaxial layer between the blue light-emitting diode epitaxial structure and the green light-emitting diode epitaxial structure, and a tunnel junction is formed by heavy doping on at least one side of the outermost layer of the n,p epitaxial layer between the green light-emitting diode epitaxial structure and the red light-emitting diode epitaxial structure.

6. The epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 1, characterized in that: The two-dimensional material layer is selected from hBN, graphene, or two-dimensional transition metal chalcogenides.

7. An RGB InGaN-based micro LED component, characterized in that: An epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip according to claim 1, 2, 3, 4 or 5, wherein the RGB InGaN LED stack epitaxial structure is fabricated and planarly distributed on the same chip or substrate, having several independently distributed components, and having a backup and repair design for the light-emitting components.

8. An RGB InGaN-based micro LED component, characterized in that: According to claim 3 or 5, an epitaxial structure for fabricating RGB InGaN-based micro LEDs on the same chip is fabricated using an RGB InGaN LED stack epitaxial structure and is planarly distributed on the same chip or substrate, having several vertically stacked LEDs, and having a backup and repair design for the light-emitting components.

9. An RGB InGaN-based micro LED assembly according to claim 7 or 8, characterized in that: Micro LED display or communication devices are formed by configuring control components on the same chip or substrate.

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