Thermistor layer type quartz crystal resonator

Abstract

The utility model discloses a thermistor layer type quartz crystal resonator, which relates to the technical field of quartz crystal resonators, and comprises an upper cover, a base, a conductive adhesive and a quartz crystal, the quartz crystal is subjected to coating treatment, the front surface of the base is provided with a kovar ring positioned on the outer ring and a ceramic groove positioned in the middle, a ceramic groove is formed in the base, a first metal guide piece is arranged in the ceramic groove, a second metal guide piece and a third metal guide piece are arranged on the back face of the base, a thermistor layer is sintered in the base and is of an interlayer structure, and the distance between the thermistor layer and a cavity of the ceramic groove is not larger than 80 micrometers. According to the thermistor layer type quartz crystal resonator provided by the utility model, the overall thickness of the base is reduced, the sensitivity, the precision, the product yield, the stability, the reliability and the heat dissipation effect of the thermistor are improved, and the cost is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to quartz crystal resonator technical field, concretely relates to a thermistor layer formula quartz crystal resonator. BACKGROUND

[0002] 5G technology has been widely applied in various industries, especially in the industry, mining, power, medical field realizes scale replication, in the field of Internet of Things, smart city, telemedicine also shows superior coverage and stable connectivity. As the hardware circuit board part supported by 5G technology also faces greater challenges, high reliability, high stability, high accuracy have become essential conditions. The thermosensitive quartz crystal resonator as one of the core components of the circuit board also puts forward higher requirements.

[0003] The current thermistor is attached to the bottom of the ceramic packaging base, and the internal cavity temperature detected by the thermistor will be delayed and error to a certain extent, which will affect the product accuracy. The thermistor is attached to the inside of the cavity, and the quartz crystal wafer and the thermistor will affect each other during assembly. The attached thermistor is prone to missed welding, virtual welding and poor coverage during attachment, and the reliability is at risk. To solve this problem, it is necessary to spend manpower and material resources to screen, increase the cost and reduce the yield. In particular, in order to achieve the goal of miniaturization, smaller thermistors are selected for packaging, which will affect the heat dissipation and voltage resistance to a certain extent, and increase the cost. UTILITY MODEL CONTENT

[0004] The technical problem to be solved by the utility model

[0005] The technical problem to be solved by the utility model is to provide a thermistor layer formula quartz crystal resonator, which reduces the overall thickness of the base, improves the sensitivity, accuracy, product yield, stability and reliability of the thermistor, and reduces the cost.

[0006] Technical scheme

[0007] To solve the above problems, the technical scheme provided by the utility model is:

[0008] A thermistor layer formula quartz crystal resonator, comprising an upper cover, a base, conductive glue, a quartz crystal, the quartz crystal is treated by plating film, the front surface of the base is provided with a Kovar ring located at the outer circle, a ceramic groove located in the middle, the ceramic groove is provided with a metal guide piece one, the back surface of the base is provided with a metal guide piece two and a metal guide piece three, the base is sintered with a thermistor layer, the thermistor layer is a sandwich structure, and the distance between the thermistor layer and the cavity of the ceramic groove is not greater than 80um.

[0009] Integrated Design: By sintering the thermistor layer directly inside the base instead of using traditional surface mounting, this design can effectively reduce the delay and error in temperature detection. Because the thermistor layer is closer to the location where the temperature needs to be monitored (i.e., the cavity of the ceramic recess), its temperature sensing is more rapid and accurate.

[0010] Improved Accuracy: The distance between the thermistor layer and the cavity of the ceramic recess is not more than 80μm, which means it can respond to temperature changes more quickly, providing more accurate temperature measurement results. This helps to improve the working accuracy of the entire resonator, especially in temperature-sensitive application scenarios.

[0011] Enhanced Reliability: Compared to traditional surface-mounted thermistors, this design reduces reliability issues caused by poor soldering (such as missing soldering, virtual soldering). The direct sintering method provides higher stability and durability, reduces the failure rate caused by manufacturing defects, and also reduces the screening cost, improving the production yield.

[0012] Miniaturization Adaptability: Although pursuing miniaturization may pose challenges to heat dissipation and pressure resistance performance, this design can achieve miniaturization goals without affecting these key performance indicators by optimizing internal structural layout (e.g., placing the thermistor layer in a specific location). In addition, using appropriate materials and processes (such as plating treatment of quartz crystal) can also help alleviate the negative effects of miniaturization.

[0013] As an option, the thermistor layer uses a composite oxide composed of cobalt, manganese, nickel, manganese, and iron materials as the base material.

[0014] The combination of these metal oxides generally has a high temperature coefficient, which means they are very sensitive to temperature changes. This allows the thermistor layer to more accurately detect temperature changes, improving the temperature sensing accuracy of the entire resonator. Using a composite oxide as the base material can provide excellent long-term stability and reliability. Under different environmental conditions (such as temperature and humidity changes), the material can maintain its performance consistency, which is crucial for ensuring the stable operation of the device over a long period of time.

[0015] Due to the high sensitivity of the composite oxide material to temperature changes, the thermistor layer can respond more quickly to temperature changes and accurately convert these changes into electrical signals. This is particularly important for application scenarios that require fast response, such as temperature monitoring in dynamic environments. This combination of materials may also improve the mechanical strength and chemical stability of the thermistor layer, making it more resistant to physical damage and chemical corrosion. This helps to extend the service life of the device and reduce failures caused by environmental factors.

[0016] As an option, the thermistor layer is one layer.

[0017] Simplified manufacturing process: The design of a single-layer structure simplifies the production process, reducing the complex procedures required for multi-layer structures such as interlayer alignment, multiple sintering, etc. This not only helps to reduce manufacturing costs, but also improves production efficiency, thereby enhancing the market competitiveness of products.

[0018] Improved reliability: By reducing the interface between layers, the single-layer structure can reduce the problem of delamination or cracking caused by the mismatch of the expansion coefficients of different materials, improving the overall reliability and long-term stability of the device.

[0019] Optimized thermal response performance: Single-layer thermistors can more directly sense temperature changes and quickly convert these changes into electrical signal output. Compared with multi-layer structures, the heat conduction path is more direct, reducing energy loss and improving the speed and accuracy of temperature sensing.

[0020] Beneficial to miniaturization design: In the trend of pursuing device miniaturization, single-layer design helps to reduce the thickness of the element, making the entire resonator more compact. This is particularly important for modern electronic devices, which often need to integrate more functions in limited space.

[0021] Reduced cost: By simplifying the production process and reducing material usage, single-layer design helps to reduce production costs. At the same time, higher yield rate also means lower screening and repair costs, further enhancing economic benefits.

[0022] Optionally, the thickness of the base is not greater than 110 μm.

[0023] The design of a thin base helps to achieve the miniaturization of the entire device, allowing the thermistor layer quartz crystal resonator to be installed in a more compact space. This is particularly important for modern electronic devices, as the requirements for device size are becoming increasingly stringent with the development of technology, especially in 5G communication, Internet of Things (IoT) and other applications that require high-density integration. As the base becomes thinner, heat is more easily transferred from one point to another, which means that the thermistor layer can more effectively perceive temperature changes in the base and the surrounding environment. This is beneficial to improve the sensitivity and accuracy of temperature monitoring, especially suitable for applications that are extremely sensitive to temperature changes.

[0024] Optionally, the upper cover and base use gold-tin solder packaging, and the base Kovar alloy ring is filled with alloy solder between the cover plate.

[0025] Gold-tin solder (AuSn solder) is known for its excellent welding performance, high strength, and good electrical conductivity. It can provide stable connection in a wide temperature range, which is particularly important for electronic devices that need to operate in extreme environments. In addition, gold-tin solder has excellent oxidation resistance, which can effectively prevent the influence of external air, humidity, etc. on internal components, thereby improving overall sealing. Filling alloy solder between the Kovar alloy ring of the base and the cover plate further enhances the integrity of the packaging structure, ensuring higher sealing and mechanical stability. This design can effectively prevent external pollutants from entering the device interior, protecting sensitive components from damage.

[0026] As an option, the lower surface of the ceramic recess is provided with a first wiring area, and the second and third metal guide sheets are electrically connected to the thermistor layer through the first wiring area.

[0027] Optimize electrical connection:

[0028] By setting a special first wiring area on the lower surface of the ceramic recess, direct and effective electrical connection between the metal guide sheet and the thermistor layer can be achieved. This way reduces obstacles and interference in the signal transmission path, improving electrical performance.

[0029] Enhance circuit stability:

[0030] This layout helps to ensure stable connection between components and reduces failures caused by poor contact or unstable connection. This is particularly important for applications that require high precision and stability, such as quartz crystal resonators in 5G communication devices.

[0031] Simplify manufacturing process:

[0032] Designing a special wiring area can make the manufacturing process more standardized and simplified. It allows more precise control of wiring location and size, improving production efficiency and yield. In addition, it is also conducive to the application of automated production lines, further reducing costs.

[0033] Improve integration:

[0034] Efficiently arranging each component and its connection lines in limited space is one of the important means to realize the miniaturization of electronic devices. By reasonably planning the location of the first wiring area, more functional units can be accommodated without increasing the overall volume, improving the integration of the product.

[0035] Improve heat dissipation performance:

[0036] Good electrical connection not only helps signal transmission, but also helps to disperse the heat generated during the work process. By optimizing the wiring design, it can indirectly promote the diffusion of heat from the key components (such as the thermistor layer) to the surrounding environment, thereby maintaining the normal working temperature of the device.

[0037] As an option, a second wiring area is provided on the thermistor layer, and the thermistor layer is electrically connected to the metal lead sheet one through the second wiring area.

[0038] As described above, the second wiring area has the advantages of optimizing the electrical path, enhancing circuit stability, simplifying the manufacturing process, improving integration, and improving heat dissipation performance.

[0039] As an option, a third wiring area is provided on the upper surface of the ceramic groove, and the metal lead sheet one is electrically connected to the quartz crystal through the third wiring area.

[0040] As described above, the third wiring area has the advantages of optimizing the electrical path, enhancing circuit stability, simplifying the manufacturing process, improving integration, and improving heat dissipation performance.

[0041] Advantages

[0042] Compared with the prior art, the technical scheme provided by the utility model has the following advantages:

[0043] The technical scheme provided by the utility model not only solves the problems of temperature sensing delay and low assembly reliability in the prior art, but also improves the accuracy, reliability and ability to meet the miniaturization requirements of the product, and meets the requirements of high reliability, high stability and high accuracy of hardware circuit board components in the 5G era. BRIEF DESCRIPTION OF DRAWINGS

[0044] Figure 1 A cover structure schematic diagram of a thermistor layer type quartz crystal resonator is provided for an embodiment of the utility model;

[0045] Figure 2 An explosion structure schematic diagram of a thermistor layer type quartz crystal resonator is provided for an embodiment of the utility model;

[0046] Figure 3 A cross-sectional structure schematic diagram of a thermistor layer type quartz crystal resonator is provided for an embodiment of the utility model;

[0047] Figure 4 An MP-11 layer schematic diagram of a thermistor layer type quartz crystal resonator is provided for an embodiment of the utility model;

[0048] Figure 5The utility model discloses an MP-21 layer schematic diagram of a thermistor layer type quartz crystal resonator.

[0049] Figure 6 The utility model discloses an MP-31 layer schematic diagram of a thermistor layer type quartz crystal resonator.

[0050] 1, upper cover;2, base;3, conductive glue;4, quartz crystal;5, metal guide piece one;6, ceramic groove;7, Kovar ring;8, metal guide piece two;9, metal guide piece three;10, thermistor layer. DETAILED DESCRIPTION

[0051] In order to further understand the content of the utility model, the utility model is described in detail in combination with the drawings and examples.

[0052] Embodiment

[0053] In combination with the drawings Figure 1 , 2 A thermistor layer type quartz crystal resonator, including upper cover 1, base 2, conductive glue 3, quartz crystal 4, quartz crystal 4 is handled through plating film, the front of base 2 is equipped with the Kovar ring 7 of outer circle, the ceramic groove 6 of being located in the middle, is equipped with metal guide piece one 5 in ceramic groove 6, the back of base 2 is equipped with metal guide piece two 8 and metal guide piece three 9, and the thickness of base 2 is not more than 110 μm, and the thickness of base 2 in this embodiment can be 100 μm or 110 μm. Upper cover 1 and base 2 adopt gold tin solder packaging, and base 2 Kovar alloy ring is filled with alloy solder between cover plate.

[0054] In combination with the drawings Figure 3 Sintering has thermistor layer 10 in base 2, and thermistor layer 10 is the sandwich structure, and the distance of thermistor layer 10 and the cavity of ceramic groove 6 is not more than 80 μm, and in this embodiment, the distance of thermistor layer 10 and the cavity of ceramic groove 6 can be 75 μm or 80 μm. Thermistor layer 10 is a layer.

[0055] Thermistor layer 10 adopts the composite oxide of being composed of cobalt, manganese, nickel, manganese and iron material as base material, has higher temperature coefficient and stability.

[0056] Manufacturing method:

[0057] Manufacture base 2:

[0058] First, select the composite oxide of high temperature coefficient as base material, design corresponding size, thickness and proportion, reach the demand of high sensitivity, and the thickness of the layer is not more than 110 μm;

[0059] Secondly, through pulping-casting-slicing-pasting frame-punching-hole filling-printing-printing-pressing-flat-lamination-edge removal-pressing groove-sintering and three times of plating-short circuit test and thermistor test-segmentation cloth-cleaning drying-appearance sorting-dust removal tray packaging, the base 2 is completed, and the plating thickness is Au 0.3-1.0 μm, Ni 1.27-8.89 μm.

[0060] The quartz wafer is made:

[0061] Firstly, the wafer size, cutting angle and electrode size are designed, and a consistent four-corner design is adopted to increase the balance of wafer vibration;

[0062] Secondly, the quartz crystal 4 surface is cleaned and dried, coated, spin-coated photoresist, soft baked, aligned and exposed, post-baked, developed, hard-baked, etched, detected and screened, and sorted and packaged to form a photoetching wafer consistent with the design.

[0063] The resistance type quartz crystal 4 resonator is made

[0064] Firstly, the wafer is cut, and the prepared quartz wafer is transferred to a tray

[0065] Dispensing: The quartz wafer is placed in the prepared PKG ceramic groove 6 (the "PKG" specifically refers to a packaging form of the thermistor layer 10 type quartz crystal 4 resonator), and the quartz wafer is connected and fixed with the metal lead piece in the groove by means of conductive conductive adhesive 3 with good conductivity;

[0066] Glue baking, the corresponding cover 1 is put into a specially designed jig, and the glue baking oven is passed together; the thermal expansion and contraction difference of the materials is minimized to reduce stress.

[0067] Fine tuning, design a fine tuning hole with electrode size +0.1mm, and the fine tuning hole is designed with a tolerance of +0.1. Ensure that the electrode is fully etched, and try to reduce the etching to the lead. Reduce the imbalance caused by etching, reduce the vibration resistance.

[0068] Finally, the cover 1 is sealed and connected with the base 2.

[0069] Increase the base 2 design of the thermistor layer 10:

[0070] The lower surface of the ceramic groove 6 is provided with a first wiring area, and the metal lead piece two 8 and the metal lead piece three 9 are electrically connected to the thermistor layer 10 through the first wiring area.

[0071] The second wiring area is arranged on the thermistor layer 10, and the thermistor layer 10 is electrically connected to the metal lead piece one 5 through the second wiring area.

[0072] The upper surface of the ceramic groove 6 is provided with a third wiring area, and the metal lead piece one 5 is electrically connected to the quartz crystal 4 through the third wiring area.

[0073] The base 2 is mainly composed of a ceramic base (CP1), a thermistor base (CP2), a ceramic base (CP3), and a ceramic frame (CP4). Among them,

[0074] The lower surface (MP-11) of the ceramic base (CP1) is a first wiring area, and the wiring is as follows Figure 4 : MP-11 layer, four external wiring pins (8 / 9);

[0075] The upper surface (MP-21) of the ceramic base (CP1) is a second wiring area, and the wiring is as follows Figure 5 : MP-21 layer, mainly to realize the electrical connection between the external wiring pins and the thermistor layer 10, and the connection with the metal guide sheet (5) in the cavity;

[0076] The upper surface (MP-31) of the ceramic base (CP3) is a third wiring area, and the wiring is as follows Figure 6 : MP-31 layer, realizing the connection with the internal main part quartz crystal 4 (4) through the metal guide sheet (5).

[0077] The above describes the utility model and its embodiments in a schematic manner, which is not restrictive, and the drawings shown are only one of the embodiments of the utility model, and the actual structure is not limited thereto. Therefore, if a person skilled in the art is inspired thereby, without departing from the creative purpose of the utility model, similar structural modes and embodiments can be designed without creativity, which shall belong to the protection scope of the utility model.

Claims

1. A hot-wire layer-type quartz crystal resonator, characterized by comprising: The application relates to a temperature sensor, which comprises an upper cover, a base, conductive glue and a quartz crystal, wherein the quartz crystal is subjected to a film plating treatment; the front surface of the base is provided with a Kovar ring located at the outer ring and a ceramic groove located in the middle; the ceramic groove is internally provided with a metal lead one; the back surface of the base is provided with a metal lead two and a metal lead three; a thermistor layer is sintered in the base; the thermistor layer is a sandwich structure; and the distance between the thermistor layer and the cavity of the ceramic groove is not greater than 80 mu m.

2. The thermistor layer type quartz crystal resonator according to claim 1, wherein The thermistor layer adopts a composite oxide composed of cobalt, manganese, nickel, manganese and iron materials as a base material.

3. A thermistor layer type quartz crystal resonator according to claim 2, wherein The thermistor layer is one layer.

4. The thermistor layer type quartz crystal resonator according to claim 1, wherein The thickness of the base is not greater than 110 mu m.

5. The thermistor layer type quartz crystal resonator according to claim 1, wherein The upper cover and the base adopt gold-tin solder sealing; and the Kovar alloy ring of the base is filled with alloy solder between the base and the cover plate.

6. The thermistor layer type quartz crystal resonator according to claim 1, wherein The lower surface of the ceramic groove is provided with a first wiring area; the metal lead two and the metal lead three are electrically connected to the thermistor layer through the first wiring area.

7. The thermistor layer type quartz crystal resonator according to claim 1, wherein The thermistor layer is provided with a second wiring area; and the thermistor layer is electrically connected to the metal lead one through the second wiring area.

8. The thermistor layer-type quartz crystal resonator according to claim 1, wherein The upper surface of the ceramic groove is provided with a third wiring area; and the metal lead one is electrically connected to the quartz crystal through the third wiring area.

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