Oxidation film deposition device capable of adjusting reaction gas in partition mode
By setting up multiple single-gas pipelines and flow controllers in the oxide film deposition device, the flow rate of the reaction gas can be adjusted in different zones, which solves the problem of uneven silica deposition and improves the uniformity and quality of the film.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHONGQING XINLIAN MICROELECTRONICS CO LTD
- Filing Date
- 2025-01-09
- Publication Date
- 2026-05-05
AI Technical Summary
Existing ISSG oxide film deposition equipment cannot individually adjust the flow rate or velocity of the reaction gas in a specific area, resulting in uneven silica deposition.
An oxide film deposition device with zoned regulation of reaction gases was designed. By setting up multiple single gas pipelines in the gas supply unit and equipping them with flow controllers, the flow rate of each reaction gas can be individually regulated, and gas channels covering the wafer surface are formed in the reaction chamber to achieve regional flow control.
Uniform deposition of oxide film on wafer surface was achieved, improving the uniformity and quality of silicon dioxide film.
Smart Images
Figure CN224205566U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to an oxide film deposition apparatus for zoned regulation of reaction gases. Background Technology
[0002] ISSG (In-situ Water Vapor Generation) technology has wide applications in semiconductor manufacturing. The oxide film generated by ISSG has excellent optical, electrical and mechanical properties, making it suitable for the manufacture of micro and nano devices, such as MEMS and nano-optical devices.
[0003] The ISSG process is a monolithic device that uses a thermal radiation source to heat hydrogen and oxygen on the wafer surface. The temperature can rise to 400–1200°C within seconds to tens of seconds, rapidly generating high-quality silicon dioxide under low pressure. This effectively prevents the growth of native oxide layers and reduces thermal costs. Silicon dioxide generated using the ISSG process is widely used in STI Liner (shallow trench isolation oxide) and Gate Oxidation (gate oxide) processes.
[0004] The thickness of the generated silica film is related to the main process temperature, time, H2 / O2 concentration and gas flow rate. Existing ISSG silica deposition equipment is limited by hardware design. Each reaction gas flows into a mixing pipe and then enters the reaction chamber. The uniformity of the silica film can generally only be adjusted by adjusting the reaction pressure in the chamber. It is not possible to adjust the flow rate or velocity of the reaction gas in a specific area individually, resulting in uneven silica deposition. Utility Model Content
[0005] To solve all or part of the problems of the prior art, this utility model provides an oxide film deposition device for zoned regulation of reaction gases.
[0006] To achieve the above objectives, this utility model provides an oxide film deposition apparatus for zoned regulation of reactive gases, comprising at least one reactive gas regulation module. The reactive gas regulation module includes a gas supply unit, an inlet unit, and gas channels. The gas supply unit is connected to the inlet unit via a mixing pipe. Reactive gases flow into the reaction chamber through the inlet area on the inlet unit and form at least one gas channel above the wafer. The gas channels cover the wafer surface, and the inlet area is provided with an outlet hole. The gas supply unit includes multiple single gas pipes connected to the mixing pipe, each of which is equipped with a flow controller. The inlet unit is located on the side wall of one side of the reaction chamber, and the outlet unit is connected to the other side of the reaction chamber. Existing ISSG oxide film deposition apparatuses typically only have one mixing pipe and one gas inlet unit. After entering the mixing pipe, each reactive gas directly enters the reaction chamber through the gas inlet unit. The gas flow rate in local areas of the reaction chamber cannot be individually adjusted, resulting in uneven silica deposition. This invention addresses this by incorporating multiple reactive gas regulation modules, each with a gas supply unit and a flow controller on a single gas pipe within the supply unit. This allows for individual regulation of the flow rate of each reactive gas before it enters the mixing pipe. Simultaneously, the gas inlet unit allows the reactive gases in each mixing pipe to form gas channels above the wafer in the reaction chamber after passing through the gas inlet unit. These multiple gas channels cover the wafer surface, enabling individual regulation of the reactive gas flow rate in the corresponding areas of different gas channels.
[0007] The mixing pipeline also includes two branch pipelines. The gas intake unit includes two gas intake areas symmetrically arranged along the center line D of the reaction chamber. The two branch pipelines connect the two gas intake areas respectively, forming two gas channels symmetrical along the center line D of the reaction chamber. Since the wafer is constantly rotating during the process, the reactive gas and gas flow rate are consistent in the regions corresponding to the gas channels in symmetrical positions, which can ensure the gas uniformity at the same radius of the wafer. The reactive gas flow rate in the regions corresponding to the gas intake units that are not in symmetrical positions can be adjusted individually.
[0008] A channel flow rate controller is installed on the mixing pipeline. This channel flow rate controller not only allows for the regulation of the reactant gas flow rate within a single mixing pipeline, but also adds the function of flow rate regulation.
[0009] The gas in the multiple single-gas pipes of the gas supply unit is one of H2, O2, NO or N2O.
[0010] The number of single gas pipes in a single gas supply unit is two, and the gases in the two single gas pipes are H2 and O2, respectively. The gas in the mixing pipe is a mixture of H2 and O2.
[0011] The number of single gas pipes in a single gas supply unit is 4, and the gases in the 4 single gas pipes are H2, O2, NO and N2O respectively. The gas in the mixing pipe is a mixture of H2, O2, NO and N2O.
[0012] The number of air outlets on the air intake area is 6-10.
[0013] The number of air outlets on each of the air intake zones is the same.
[0014] The number of air outlet units is one or more.
[0015] A heating device is installed directly above the reaction chamber to provide a heat source for the deposition process of the wafer oxide film.
[0016] Compared with the prior art, the beneficial effects of this utility model are as follows: This utility model sets up at least one reaction gas regulating module, each reaction gas regulating module is equipped with a gas supply unit, and a flow controller is set on the single gas pipeline in the gas supply unit, so that the flow rate of each reaction gas can be individually regulated before each reaction gas enters the mixing pipeline. At the same time, an air inlet unit is set up so that the reaction gas in each mixing pipeline forms at least one gas channel above the wafer in the reaction chamber after passing through the air inlet unit. The gas channel covers the wafer surface, thereby realizing the individual regulation of the reaction gas flow rate in the corresponding area of different gas channels. Attached Figure Description
[0017] Figure 1 This is a schematic diagram of an oxide film deposition device for zoned regulation of reactive gases provided in Embodiment 1 of this utility model;
[0018] Figure 2 This is a schematic diagram of an oxide film deposition device for zoned regulation of reactive gases provided in Embodiment 2 of this utility model;
[0019] Figure 3 This is a schematic diagram of an oxide film deposition device for zoned regulation of reactive gases provided in Embodiment 3 of this utility model;
[0020] Figure 4 This is a schematic diagram of an oxide film deposition device for zoned regulation of reactive gases provided in Embodiment 4 of this utility model.
[0021] Explanation of reference numerals in the attached figures:
[0022] Box A contains the reaction gas regulation module; Box B contains the gas supply unit; Box C contains the gas inlet unit; 1. Single gas pipeline; 2. Flow controller; 3. Mixing pipeline; 4. Channel flow rate controller; 5. Gas inlet area; 6. Reaction chamber; 7. Gas outlet unit; 8. Branch pipeline. Detailed Implementation
[0023] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the scope of protection of the present invention.
[0024] Example 1
[0025] like Figure 1 As shown, this embodiment provides an oxide film deposition apparatus with zoned adjustment of reactive gases, comprising multiple reactive gas adjustment modules A. Each reactive gas adjustment module A includes a gas supply unit B, an inlet unit C, and gas channels (as indicated by gray arrows in the figure). The gas supply unit B is connected to the inlet unit C via a mixing pipe 3. Reactive gases flow into the reaction chamber 6 through the inlet area 5 on the inlet unit C and form the gas channels above the wafer. Multiple gas channels cover the wafer surface. The inlet area 5 is provided with an outlet hole. The gas supply unit B includes multiple single gas pipes 1, each of which is equipped with a flow controller 2. The inlet unit B is located on one side wall of the reaction chamber 6, and the other side of the reaction chamber 6 is connected to an outlet unit 7.
[0026] The air inlet zone 5 has six air inlets, with the same number of air inlets in each air inlet zone 5. In this embodiment, a channel flow rate controller 4 is also provided on the mixing pipe 3, which not only regulates the flow rate of the reaction gas in a single mixing pipe but also adds the function of flow rate regulation. The number of single gas pipes 1 in a single gas supply unit B is two, with the gases in the single gas pipes 1 being H2 and O2, respectively, and the gas in the mixing pipe is a mixture of H2 and O2. The number of air outlet units 7 is one, but in other embodiments, the number of air outlet units 7 may be multiple. In this embodiment, a heating device (not shown in the figure) is also provided directly above the reaction chamber 6 to provide a heat source for the deposition process of the wafer oxide film.
[0027] This invention provides at least one reaction gas regulating module A, with a gas supply unit B within each module A. A flow controller 2 is installed on the single gas pipeline 1 within the gas supply unit B, thereby enabling individual regulation of the flow rate of each reaction gas before it enters the mixing pipeline 3. Simultaneously, an inlet unit C is provided, allowing the reaction gas in each mixing pipeline 3 to form at least one gas channel above the wafer in the reaction chamber 6 after passing through the inlet area 5 within the inlet unit C. The gas channel covers the wafer surface, thus enabling individual regulation of the reaction gas flow rate in the corresponding area of different gas channels.
[0028] Example 2
[0029] This embodiment provides an oxide film deposition device with zoned regulation of reaction gases. The structure is basically the same as that of the oxide film deposition device in Embodiment 1. The only difference is that the single gas pipeline 1 of the gas supply unit B has been further improved, so that the gas supply unit B can provide H2, O2, NO and N2O according to process requirements.
[0030] like Figure 2 As shown, each gas supply unit B in this invention is equipped with four single gas pipelines 1, which transport H2, O2, NO and N2O respectively. The flow controller 2 on the single gas pipeline 1 can adjust the flow rate of the reaction gas in each single gas pipeline 1.
[0031] Example 3
[0032] This embodiment provides an oxide film deposition device with zoned regulation of reaction gases. Its structure is basically the same as the oxide film deposition device in Embodiment 1, except that the mixing pipe 3 further includes two branch pipes 8, which are respectively connected to the gas inlet zones 5, forming two symmetrical gas channels along the center line D of the reaction chamber. In this embodiment, there are two gas supply units B. The mixing pipe 3 of each gas supply unit B is connected to two symmetrically arranged gas inlet zones 5 through the two branch pipes 8. See [link to documentation]. Figure 3 Since the wafer is constantly rotating during the manufacturing process, the technical solution described in this embodiment ensures that the reactive gas and gas flow rate are consistent in the regions corresponding to the gas channels in symmetrical positions, thus guaranteeing gas uniformity at the same radius position on the wafer. Meanwhile, the reactive gas flow rate in the regions corresponding to the gas inlet units that are not in symmetrical positions can be adjusted individually.
[0033] Example 4
[0034] This embodiment provides an oxide film deposition device with zoned regulation of reaction gases. It has a structure that is basically the same as the oxide film deposition device in Embodiment 3. The only difference is that the single gas pipeline 1 of the gas supply unit B has been further improved, so that the gas supply unit B can provide H2, O2, NO and N2O according to process requirements.
[0035] like Figure 4 As shown, each gas supply unit B in this invention is equipped with four single gas pipelines 1, which transport H2, O2, NO and N2O respectively. The flow controller 2 on the single gas pipeline 1 can adjust the flow rate of the reaction gas in each single gas pipeline 1.
[0036] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.
Claims
1. An oxide film deposition apparatus for zoned regulation of reactive gases, characterized in that... include: At least one reaction gas regulating module A, the reaction gas regulating module A includes a gas supply unit B, an air intake unit C and a gas channel, the gas supply unit B is connected to the air intake unit C through a mixing pipe (3), the reaction gas flows into the reaction chamber through the air intake area (5) on the air intake unit C and forms at least one gas channel above the wafer, the gas channel covers the surface of the wafer, and the air intake area (5) is provided with an air outlet; the gas supply unit B includes multiple single gas pipes (1) connected to the mixing pipe (3), each of the single gas pipes (1) is provided with a flow controller (2), the air intake unit C is located on the side wall of one side of the reaction chamber (6), and the other side of the reaction chamber (6) is connected to an air outlet unit.
2. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1, characterized in that: The mixing pipe (3) also includes two branch pipes (8). The air intake unit C includes two air intake areas (5) symmetrically arranged along the center line D of the reaction chamber (6). The two branch pipes (8) are respectively connected to the two air intake areas (5) to form two air passages symmetrical along the center line D of the reaction chamber (6).
3. An oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1 or 2, characterized in that: A channel flow rate controller (4) is installed on the mixing pipe (3).
4. An oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1 or 2, characterized in that: The gas in the multiple single gas pipes (1) of the gas supply unit B is one of H2, O2, NO or N2O.
5. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 4, characterized in that: The gas supply unit B has two single gas pipes (1), and the reaction gases in the two single gas pipes (1) are H2 and O2, respectively. The reaction gas in the mixing pipe (3) is a mixture of H2 and O2.
6. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 4, characterized in that: The gas supply unit B has four single gas pipes (1), and the reaction gases in the four single gas pipes (1) are H2, O2, NO and N2O respectively. The reaction gas in the mixing pipe (3) is a mixture of H2, O2, NO and N2O.
7. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1, characterized in that: The number of air outlets on the air intake area (5) is 6-10.
8. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 7, characterized in that: The number of air outlets on each of the air inlet zones (5) is the same.
9. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1, characterized in that: The number of the air outlet units (7) is one or more.
10. The oxide film deposition apparatus for zoned regulation of reactive gases according to claim 1, characterized in that: A heating device is provided above the reaction chamber (6) to provide a heat source for the deposition process of wafer oxide film.