Eddy current method handheld semiconductor crystal ingot resistivity measurement system

Abstract

The utility model discloses a handheld semiconductor crystal ingot resistivity measurement system adopting an eddy current method. The handheld semiconductor crystal ingot resistivity measurement system comprises a resistivity probe, an infrared temperature measurement probe, a measurement trigger switch, a data acquisition controller and a data display and analysis terminal, according to the utility model, the resistivity in a certain range (0.0005-50 ohm * cm) can be measured, a four-probe measurement can be completely replaced in the resistivity range, the problems that the four-probe has damage to a sample, needs regular maintenance and calibration and the like are solved, the temperature measurement module is additionally arranged, the surface temperature of a crystal ingot is collected and recorded while the resistivity is measured, and the measurement accuracy is improved. And the temperature coefficient of the material can be compensated to obtain a standard resistivity value at 23 DEG C.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor ingot resistivity measurement technology, specifically to a handheld semiconductor ingot resistivity measurement system using the eddy current method. Background Technology

[0002] Currently, the resistivity measurement of semiconductor materials uses a four-probe standard. This technique is a direct contact measurement, and its main drawbacks are damage to the sample surface and metal deposition. Furthermore, probe wear and effective maintenance significantly impact measurement accuracy. Therefore, non-contact eddy current measurement has become widely popular and used. Currently, the core probes for non-contact measurement are mainly imported. Our company has independently developed an eddy current probe and has applied for the following patent: CN202220106083.2 A non-contact sheet resistance and resistivity probe device.

[0003] Semiconductor ingots vary in size, volume, and properties. For example, Si material ingots have been developed for many years, reaching diameters of up to 12 inches and lengths of several meters. However, SiC material technology has developed rapidly in recent years, with diameters reaching 6 inches and lengths of several centimeters. Quality control of ingots is particularly important. Si materials require long-term stable and reliable testing equipment with minimal maintenance, while SiC materials emphasize non-destructive measurement. Therefore, a handheld eddy current method measuring device can, to a certain extent, replace four probes for measuring the resistivity of ingots.

[0004] Temperature has a significant impact on semiconductor materials; resistivity results differ at different temperatures. Standards require conversion to resistivity values ​​at 23°C as the intrinsic resistivity of the ingot. Since ingots are produced at high temperatures (up to 1500°C), their production and measurement environments vary considerably. Therefore, resistivity measurements should be closely linked to temperature measurements.

[0005] Currently, there are handheld imported (LEI) ingot resistivity testers that control resistivity measurement through an industrial computer program, which is somewhat inconvenient to use. They also lack a temperature measurement module, and generally only provide accurate measurement results within a specific temperature range. Furthermore, they do not have multi-point measurement data mapping functionality.

[0006] Therefore, it is of great significance to provide a handheld semiconductor ingot resistivity measurement system based on eddy current method to solve the problems existing in the current technology. Utility Model Content

[0007] In view of this, the purpose of this application is to provide a handheld semiconductor ingot resistivity measurement system using the eddy current method to solve the problem.

[0008] To achieve the above objectives, this utility model provides the following technical solution:

[0009] The handheld semiconductor ingot resistivity measurement system using the eddy current method consists of a resistivity probe, an infrared temperature probe, a measurement trigger switch, a data acquisition controller, and a data display and analysis terminal.

[0010] The resistivity probe is used to measure resistivity; the infrared temperature probe is used to measure temperature; the measurement trigger switch is used to trigger the measurement system to turn on / off.

[0011] The resistivity probe, infrared temperature probe, and measurement trigger switch are all connected to the data acquisition controller via ribbon cables; the measurement trigger switch is connected to the data display and analysis terminal via a network cable.

[0012] Preferably, the data acquisition controller has an interface compatible with the resistivity probe, infrared temperature probe, and measurement trigger switch.

[0013] Preferably, the data display and analysis terminal can be a configuration screen, tablet computer, industrial control computer, etc.

[0014] Preferably, the data acquisition controller has a built-in memory, which stores a temperature compensation coefficient.

[0015] Compared with the prior art, the beneficial effects of this utility model are:

[0016] 1. This utility model can measure resistivity within a certain range (0.0005-50Ω*cm). Within this resistivity range, it can completely replace the four-probe measurement and solve the problems of the four-probe being destructive to the sample and requiring regular maintenance and calibration.

[0017] 2. This utility model adds a temperature measurement module, which collects and records the surface temperature of the crystal ingot while measuring resistivity. The standard resistivity value at 23℃ can be obtained by compensating for the temperature coefficient of the material.

[0018] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the preferred embodiments of this application are described in detail below with reference to the accompanying drawings.

[0019] The above and other objects, advantages and features of this application will become more apparent to those skilled in the art from the following detailed description of specific embodiments in conjunction with the accompanying drawings. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. In all drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, the elements or parts are not necessarily drawn to scale.

[0021] Figure 1 This is a system block diagram of the present invention;

[0022] Figure 2 This is a structural diagram of the data acquisition controller in this utility model.

[0023] In the diagram: 100, resistivity probe; 200, infrared temperature probe; 300, measurement trigger switch; 400, data acquisition controller; 500, data display and analysis terminal. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. In the following description, specific details such as specific configurations and terminals are provided merely to help fully understand the embodiments of this application. Therefore, those skilled in the art should understand that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of this application. In addition, for clarity and brevity, descriptions of known functions and structures are omitted in the embodiments.

[0025] Furthermore, reference numerals and / or letters may be repeated in different examples within this application. Such repetition is for the purpose of simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or settings discussed.

[0026] In this article, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can mean: A exists alone, B exists alone, and A and B exist simultaneously. The term " / and" in this article describes another type of relationship between related objects, indicating that two relationships can exist. For example, A / and B can mean: A exists alone, and A and B exist alone. In addition, the character " / " in this article generally indicates that the related objects before and after it are in an "or" relationship.

[0027] It should also be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion.

[0028] Please see Figure 1-2 The present invention provides a technical solution for a handheld semiconductor ingot resistivity measurement system using the eddy current method, comprising a resistivity probe 100, an infrared temperature probe 200, a measurement trigger switch 300, a data acquisition controller 400, and a data display and analysis terminal 500.

[0029] The resistivity probe 100 is used to measure resistivity; the infrared temperature probe 200 is used to measure temperature; and the measurement trigger switch 300 is used to trigger the on / off state of the measurement system.

[0030] The resistivity probe 100, infrared temperature probe 200, and measurement trigger switch 300 are all connected to the data acquisition controller 400 via ribbon cables; the measurement trigger switch 300 is connected to the data display and analysis terminal 500 via a network cable.

[0031] The data acquisition controller 400 has an interface that is compatible with the resistivity probe 100, the infrared temperature probe 200, and the measurement trigger switch 300.

[0032] The data analysis terminal 500 can be a configuration screen, tablet computer, industrial control computer, etc.

[0033] The data acquisition controller 400 has a built-in memory containing a temperature compensation coefficient, with a fixed temperature coefficient of 0.00736.

[0034] Example 1:

[0035] Single point testing:

[0036] 1. Before measurement, place the resistivity probe 100 and the infrared temperature probe 200 on the probe holder;

[0037] The blank test function button on the data display and analysis terminal 500 enables the self-calibration of the blank signal.

[0038] 2. Remove the resistivity probe 100 and the infrared temperature probe 200 from the probe holder and hold the probes to the point to be measured;

[0039] The sample can be tested by clicking the sample test button on the display analysis terminal 500 or by clicking the trigger button.

[0040] 3. Measurement results are displayed;

[0041] Displays information such as the measured value at the current temperature, the ingot temperature, the resistivity value at 23℃, and the measurement method;

[0042] 4. Data processing;

[0043] Measurement results can be uploaded to the MES system and recorded.

[0044] Example 2:

[0045] Multi-point mapping test:

[0046] 1. Input multiple point coordinates on the display analysis terminal 500;

[0047] 2. Before measurement, place the resistivity probe 100 and the infrared temperature probe 200 on the probe holder;

[0048] The blank signal self-calibration operation can be achieved by using the blank test function button on the display analysis terminal 500, or by using the trigger button (long press or double click).

[0049] 3. Remove the resistivity probe 100 and infrared temperature probe 200 from the probe holder and hold the probes to the point to be measured (the first coordinate point);

[0050] Sample testing can be performed using the sample test button on the display terminal, or by clicking the trigger button.

[0051] 4. Measurement results are displayed;

[0052] Displays information such as the measured value at the current temperature, the ingot temperature, the resistivity value at 23℃, and the measurement method;

[0053] 5. Move the display analysis terminal 500 to the second coordinate point for testing;

[0054] 6. After all coordinate tests are completed, the system will automatically analyze the data results and generate a mapping diagram.

[0055] It can analyze important information such as the maximum, minimum, average, and uniformity of data;

[0056] Generate mapping information such as contour lines and surface maps;

[0057] Generate PDF reports and other information.

[0058] The above description is merely a preferred embodiment of this utility model and does not limit the scope of protection of this utility model. For those skilled in the art, this utility model can have various modifications and variations. Any changes, modifications, substitutions, integrations, and parameter alterations made to these embodiments within the spirit and principles of this utility model, through conventional substitutions or methods that achieve the same function without departing from the principles and spirit of this utility model, fall within the scope of protection of this utility model.

Claims

1. A handheld semiconductor ingot resistivity measurement system using the eddy current method, characterized in that: Includes a resistivity probe (100), an infrared temperature probe (200), a measurement trigger switch (300), a data acquisition controller (400), and a data display and analysis terminal (500). The resistivity probe (100) is used to measure resistivity; the infrared temperature probe (200) is used to measure temperature; the measurement trigger switch (300) is used to trigger the measurement system to turn on / off. The resistivity probe (100), infrared temperature probe (200), and measurement trigger switch (300) are all connected to the data acquisition controller (400) via ribbon cables; the measurement trigger switch (300) is connected to the data display and analysis terminal (500) via a network cable.

2. The handheld semiconductor ingot resistivity measurement system using the eddy current method as described in claim 1, characterized in that: The data acquisition controller (400) has an interface adapted to the resistivity probe (100), the infrared temperature probe (200), and the measurement trigger switch (300).

3. The handheld semiconductor ingot resistivity measurement system using the eddy current method as described in claim 2, characterized in that: The data display and analysis terminal (500) can be a configuration screen, a tablet computer, or an industrial control computer.

4. The handheld semiconductor ingot resistivity measurement system using the eddy current method as described in claim 3, characterized in that: The data acquisition controller (400) has a built-in memory, which stores temperature compensation coefficients.

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