Substrate cleaning device based on magnetron sputtering ion source

Abstract

The utility model discloses a substrate cleaning device based on a magnetron sputtering ion source, which comprises a substrate, a gas supply component is arranged on the front side of the substrate, and an electric field component and a magnetic field component are arranged on the back side of the substrate; the gas supply assembly comprises a plurality of gas taps, and the gas taps are arranged at intervals in the length direction of the gas supply assembly and continuously provide argon serving as process gas towards the base material; the electric field assembly is arranged in the middle of the back surface of the substrate to form a strong electric field, so that argon is ionized in the electric field to generate argon ions and free electrons, and the argon ions and the free electrons accelerate to move towards the surface of the to-be-cleaned substrate under the action of the electric field to form a high-energy ion beam; the magnetic field assemblies are located on the back face of the substrate, are continuously arranged in the length direction and are perpendicular to an electric field formed by the electric field assemblies to form an electromagnetic coupling environment. The magnetic field restrains the motion trail of the electrons, the motion path of the electrons in the plasma is prolonged, meanwhile, the motion trail of the argon ions is regulated and controlled, and the electrons bombard the surface of the base material to be cleaned more intensively.

Description

Technical Field

[0001] This utility model relates to the technical field of ion source cleaning devices, and in particular to a substrate cleaning device based on a magnetron sputtering ion source. Background Technology

[0002] In magnetron sputtering coating processes, the cleanliness of the substrate surface directly affects the uniformity, adhesion, and overall performance of the thin film. Traditional substrate cleaning methods often employ chemical reagents or offline plasma treatment, which suffer from low cleaning efficiency, high risk of contaminant residue, and the need to interrupt production processes. With the industrial application of magnetron sputtering technology, especially the increasing demand for large-area coatings and high-precision optical thin films, higher requirements are being placed on the reliability and accuracy of online cleaning technologies.

[0003] However, existing magnetron sputtering ion source cleaning solutions still have limitations: traditional ion sources are prone to uneven cleaning on large-area substrates, and high-temperature environments may cause thermal damage to temperature-sensitive substrates. Therefore, developing a magnetron sputtering ion source cleaning device that combines efficient ionization, uniform cleaning, low-temperature control, and online integration capabilities has become a key technological requirement for improving the stability of coating processes and the quality of thin films. Utility Model Content

[0004] The purpose of this invention is to provide a substrate cleaning device based on a magnetron sputtering ion source to overcome the deficiencies in the prior art.

[0005] To solve the above-mentioned technical problems, this utility model provides a substrate cleaning device based on a magnetron sputtering ion source, including a substrate, wherein a gas supply component is provided on the front side of the substrate, and an electric field component and a magnetic field component are provided on the back side.

[0006] The gas supply assembly includes multiple gas nozzles, and the multiple gas nozzles are spaced apart along the length of the gas supply assembly to continuously supply argon gas as a process gas toward the substrate.

[0007] The electric field component is disposed in the middle of the back side of the substrate to form a strong electric field, which causes argon gas to be ionized in the electric field, generating argon ions and free electrons, which are accelerated towards the surface of the substrate to be cleaned under the action of the electric field to form a high-energy ion beam.

[0008] The magnetic field component is located on the back of the substrate and is continuously arranged along the length direction. It is perpendicular to the electric field formed by the electric field component, forming an electromagnetic coupling environment. The magnetic field constrains the trajectory of electrons, prolongs the electron's movement path in the plasma, and simultaneously regulates the trajectory of argon ions, so that electrons bombard the surface of the substrate to be cleaned more concentratedly.

[0009] Preferably, the air supply assembly further includes an air supply plate and a cooling plate. An air supply channel is provided on the air supply plate, and the air supply channel extends along the length of the air supply plate. A plurality of air nozzles pass through the cooling plate and communicate with the air supply channel.

[0010] Preferably, the back side of the substrate is further provided with at least one air supply pipe, which passes through the substrate and is connected to the air supply channel.

[0011] Preferably, the magnetic field assembly includes a magnet base and a plurality of permanent magnets arranged in sequence. The magnet base is fixedly connected to the back side of the substrate, and the permanent magnets are arranged in sequence along the length direction of the substrate within the magnet base.

[0012] Preferably, the electric field component includes two electrodes that extend from the back of the substrate through the substrate and the gas supply plate to the cooling plate, and the two electrodes are symmetrically arranged on both sides of the permanent magnet, perpendicular to the extension direction of the permanent magnet.

[0013] Preferably, the cooling plate has a first cooling channel, which is arranged in a U-shape within the cooling plate, and is cooled by cooling water circulating within the first cooling channel.

[0014] Preferably, the front of the cooling plate is covered with a protective plate.

[0015] Preferably, the back of the substrate is also provided with a plurality of threaded connection holes, which pass through the substrate and the air supply plate in sequence and extend into the cooling plate. The substrate, the air supply plate and the cooling plate are fixedly connected by bolts, and the plurality of threaded connection holes are grouped in pairs and distributed at intervals along the length of the substrate.

[0016] Preferably, the back side of the substrate is provided with a second cooling channel, which is U-shaped and installed in the groove of the substrate.

[0017] Compared with the prior art, the beneficial effects of this utility model are:

[0018] 1. The magnetron sputtering ion source of this utility model provides a new approach to substrate cleaning by virtue of its high-energy and direction-controllable ion beam characteristics. Through the synergistic effect of magnetic and electric fields, the ion source can generate plasma with high ionization rate to accurately bombard impurities or oxide layers adsorbed on the substrate surface, while avoiding damage to the substrate itself.

[0019] 2. The substrate cleaning device is equipped with two cooling channels: a first cooling channel for the front cooling plate of the gas supply and a second cooling channel for the back substrate. The two cooling channels work together to achieve low-temperature control of the magnetron sputtering ion source cleaning device, thereby improving the stability of the coating process and the quality of the film. Attached Figure Description

[0020] Figure 1 This is a first-view structural schematic diagram of the substrate cleaning device based on a magnetron sputtering ion source provided by this utility model;

[0021] Figure 2 This is a second-view structural schematic diagram of the substrate cleaning device based on a magnetron sputtering ion source provided by this utility model;

[0022] Figure 3 This is a front view of the substrate cleaning device based on a magnetron sputtering ion source provided by this utility model;

[0023] Figure 4 This is a rear view of the substrate cleaning device based on a magnetron sputtering ion source provided by this utility model;

[0024] Figure 5 yes Figure 3 A cross-sectional view along the AA direction;

[0025] Figure 6 yes Figure 4 A cross-sectional view along the EE direction;

[0026] Figure 7 yes Figure 4 Cross-sectional view along the BB direction;

[0027] Figure 8 yes Figure 4 A cross-sectional view along the CC direction;

[0028] Figure 9 This is a layout diagram of the first cooling channel provided by this utility model.

[0029] In the figure: 1. Substrate; 2. Air supply assembly; 201. Air nozzle; 202. Air supply plate; 203. Cooling plate; 204. Air supply channel; 3. Electric field assembly; 301. Electrode; 4. Magnetic field assembly; 401. Magnet base; 402. Permanent magnet; 5. Air supply pipe; 6. First cooling channel; 7. Protective plate; 8. Threaded connection hole; 9. Second cooling channel. Detailed Implementation

[0030] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description and claims. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0031] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0032] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Example

[0033] This invention provides a substrate cleaning device based on a magnetron sputtering ion source. Please refer to [link to relevant documentation]. Figure 1-4 The substrate includes a substrate 1, with an air supply component 2 on the front side and an electric field component 3 and a magnetic field component 4 on the back side. In this embodiment, the front side of the substrate 1 faces and is close to the substrate to be cleaned, while the back side is away from the substrate to be cleaned.

[0034] The gas supply assembly 2 includes a plurality of gas nozzles 201, and the plurality of gas nozzles 201 are arranged at intervals along the length direction of the gas supply assembly 2 to continuously supply argon gas as a process gas toward the substrate.

[0035] The electric field component 3 is located in the middle of the back side of the substrate 1, forming a strong electric field. This ionizes the argon gas, generating argon ions and free electrons, which are accelerated towards the surface of the substrate to be cleaned under the action of the electric field, forming a high-energy ion beam. The magnetic field component 4 is located on the back side of the substrate 1 and is continuously arranged along the length direction. It is perpendicular to the electric field formed by the electric field component 3, forming an electromagnetic coupling environment. The magnetic field constrains the trajectory of the electrons, extending the electrons' path in the plasma, and simultaneously modulates the trajectory of the argon ions, making the electrons bombard the surface of the substrate to be cleaned more concentratedly.

[0036] Electrons bound by a magnetic field repeatedly bombard argon atoms, causing them to continuously ionize and forming a stable plasma environment. The bombardment of argon ions produces a "physical sputtering" effect, which can directly remove particles and thin contaminants from the glass surface.

[0037] Specifically, such as Figure 5 As shown, the air supply assembly 2 also includes an air supply plate 202 and a cooling plate 203. An air supply channel 204 is provided on the air supply plate 202. The air supply channel 204 extends along the length direction of the air supply plate 202, and a plurality of air nozzles 201 pass through the cooling plate 203 and communicate with the air supply channel 204.

[0038] For further information, please refer to the following: Figure 6 The substrate 1 also has at least one gas supply pipe 5 on its back side, which passes through the substrate 1 and connects to the gas supply channel 204. External process gas argon is introduced into the gas supply channel 204 through the gas supply pipe 5, and then supplied to multiple gas nozzles 201 via the gas supply channel 204. In this embodiment, the gas supply channel 204 is provided with multiple partition blocks, dividing the long gas supply channel 204 into multiple regions, and each region is equipped with a gas supply pipe 5, so that the gas nozzles 201 in the middle and at both ends can output process gas at sufficient pressure.

[0039] For details, please continue reading. Figure 5 The magnetic field assembly 4 includes a magnet base 401 and a plurality of permanent magnets 402 arranged in sequence. The magnet base 401 is fixedly connected to the back side of the substrate 1, and the permanent magnets 402 are arranged in sequence along the length direction of the substrate 1 within the magnet base 401.

[0040] For further details, please refer to Figure 7 The electric field component 3 includes two electrodes 301. The two electrodes 301 extend from the back of the substrate 1 through the substrate 1 and the gas supply plate 202 to the cooling plate 203. The two electrodes 301 are symmetrically arranged on both sides of the permanent magnet 402 and perpendicular to the extension direction of the permanent magnet 402.

[0041] For details, please refer to the following: Figure 8 and Figure 9 The cooling plate 203 has a first cooling channel 6, which is arranged in a U-shape within the cooling plate 203. Cooling is achieved by circulating cooling water within the first cooling channel 6.

[0042] In this embodiment, the two ends of the first cooling channel 6 are also connected to an external water source through cooling water pipes penetrating the substrate 1, so that cooling water is circulated in under the action of an external water pump.

[0043] Furthermore, the back of the substrate 1 is provided with a plurality of threaded connection holes 8, which pass through the substrate 1 and the air supply plate 202 in sequence and extend into the cooling plate 203. The substrate 1, the air supply plate 202 and the cooling plate 203 are fixedly connected by bolts, and the plurality of threaded connection holes 8 are grouped in pairs and distributed at intervals along the length of the substrate 1.

[0044] For details, please refer to Figure 2 The substrate 1 has a second cooling channel 9 on its back side. The second cooling channel 9 is U-shaped and installed in the groove of the substrate 1. The second cooling channel 9 is connected to an external water source through a cooling water pipe, so that cooling water is circulated in under the action of an external water pump to cool the substrate 1.

[0045] The substrate cleaning device is equipped with two cooling channels: a first cooling channel for the front cooling plate 203 and a second cooling channel for the back substrate 1. The two cooling channels work together to achieve low-temperature control of the magnetron sputtering ion source cleaning device, thereby improving the stability of the coating process and the quality of the film.

[0046] The above description is only a description of the preferred embodiment of the present utility model and is not intended to limit the scope of the present utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A substrate cleaning device based on a magnetron sputtering ion source, characterized in that, The substrate (1) includes a gas supply component (2) on the front side and an electric field component (3) and a magnetic field component (4) on the back side. The gas supply assembly (2) includes a plurality of gas nozzles (201), and the plurality of gas nozzles (201) are arranged at intervals along the length direction of the gas supply assembly (2) to continuously supply argon gas as a process gas toward the substrate; The electric field component (3) is disposed in the middle of the back side of the substrate (1) to form a strong electric field, so that argon gas is ionized in the electric field, generating argon ions and free electrons, which are accelerated towards the surface of the substrate to be cleaned under the action of the electric field to form a high-energy ion beam. The magnetic field component (4) is located on the back of the substrate (1) and is continuously arranged along the length direction. It is perpendicular to the electric field formed by the electric field component (3) to form an electromagnetic coupling environment. The magnetic field constrains the movement trajectory of electrons, extends the movement path of electrons in the plasma, and at the same time regulates the movement trajectory of argon ions, so that electrons bombard the surface of the substrate to be cleaned more concentratedly.

2. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 1, characterized in that, The air supply assembly (2) further includes an air supply plate (202) and a cooling plate (203). An air supply channel (204) is provided on the air supply plate (202). The air supply channel (204) extends along the length of the air supply plate (202), and a plurality of air nozzles (201) pass through the cooling plate (203) and communicate with the air supply channel (204).

3. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 2, characterized in that, The back of the substrate (1) is also provided with at least one air supply pipe (5), which passes through the substrate (1) and is connected to the air supply channel (204).

4. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 2, characterized in that, The magnetic field assembly (4) includes a magnet base (401) and a plurality of permanent magnets (402) arranged in sequence. The magnet base (401) is fixedly connected to the back side of the substrate (1), and the permanent magnets (402) are arranged in sequence along the length direction of the substrate (1) inside the magnet base (401).

5. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 4, characterized in that, The electric field component (3) includes two electrodes (301). The two electrodes (301) extend from the back of the substrate (1) through the substrate (1) and the gas supply plate (202) to the cooling plate (203). The two electrodes (301) are symmetrically arranged on both sides of the permanent magnet (402) and perpendicular to the extension direction of the permanent magnet (402).

6. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 2, characterized in that, The cooling plate (203) has a first cooling channel (6) inside. The first cooling channel (6) is arranged in a U-shape inside the cooling plate (203) and is cooled by cooling water circulating in the first cooling channel (6).

7. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 6, characterized in that, The front of the cooling plate (203) is covered with a protective plate (7).

8. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 2, characterized in that, The back of the substrate (1) is also provided with a plurality of threaded connection holes (8). The plurality of threaded connection holes (8) pass through the substrate (1) and the air supply plate (202) in sequence and extend into the cooling plate (203). The substrate (1), the air supply plate (202) and the cooling plate (203) are fixedly connected by bolts. The plurality of threaded connection holes (8) are grouped in pairs and distributed at intervals along the length of the substrate (1).

9. The substrate cleaning apparatus based on a magnetron sputtering ion source as described in claim 1, characterized in that, The substrate (1) has a second cooling channel (9) on its back side, and the second cooling channel (9) is installed in a U-shape in the groove of the substrate (1).

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