Lightning protection device

Abstract

The application provides a lightning protection device, and belongs to the technical field of electrostatic discharge protection. A first high-voltage resistor and a first power diode are formed by a first N-type well region, two second N-type well regions, an N-type injection region, a P-type well region, a P-type injection region, a first oxide layer, two first metal regions, a second oxide layer, and a second metal region arranged on an epitaxial layer. The structure of a second power diode is the same as that of the first power diode. The lightning protection device is formed at the input end of the protected device through the structures of the first high-voltage resistor, the first power diode, and the second power diode. Through the device, a transient voltage suppressor is not needed, the area of the device is reduced, the integration and reliability are improved by the clamping characteristics of the first high-voltage resistor, the first power diode, and the second power diode, the problem that the transient voltage suppressor occupies a large area and is not conducive to integration is solved, and the demand for integration can be met.

Description

Technical Field

[0001] This application belongs to the field of electrostatic discharge protection technology, and in particular relates to a lightning protection device. Background Technology

[0002] With the rapid development of electronic equipment and communication technologies, more and more electronic systems are being applied in fields such as communication, meteorological monitoring, and industrial control. However, these devices, when operating outdoors or at high altitudes, are highly susceptible to lightning strikes and the resulting transient high voltages and currents. The electromagnetic pulse (LEMP) and transient overvoltages generated by lightning strikes can cause serious damage to electronic components and integrated circuits, leading to equipment failures and even safety accidents.

[0003] Traditional lightning protection devices typically employ transient voltage suppressors (TVS). However, TVS suffers from drawbacks such as large footprint, hindering integration and failing to meet the integration requirements of modern electronic devices. Utility Model Content

[0004] The purpose of this application is to provide a lightning protection device that aims to solve the problem of large area occupied by transient voltage suppressors in traditional technologies, which is not conducive to integration.

[0005] This application provides a lightning protection device, including:

[0006] An epitaxial layer is provided therein, wherein a first N-type well region is provided, and two second N-type well regions and a P-type well region are provided on the surface of the first N-type well region at intervals, and the two second N-type well regions are connected through the first N-type well region;

[0007] Each of the second N-type well regions is provided with an N-type injection region; wherein, the N-type injection region serves as the cathode of the first power diode;

[0008] A P-type injection region is provided within the P-type well region; wherein, the P-type injection region serves as the anode terminal of the first power diode;

[0009] A second power diode is disposed within the epitaxial layer, and the structure of the second power diode is the same as that of the first power diode.

[0010] A first high-voltage resistor is disposed on the outer surface of the epitaxial layer;

[0011] Wherein, one end of the first high-voltage resistor serves as the input terminal of the lightning protection device, the other end of the first high-voltage resistor is connected to the input terminal of the protected device, the other end of the first high-voltage resistor is connected to the anode of the first power diode and the cathode of the second power diode, the cathode of the first power diode is connected to the power supply terminal of the protected device, and the anode of the second power diode is connected to the ground terminal of the protected device.

[0012] In one embodiment, a first N-type well region is disposed within a first groove of the epitaxial layer, two second N-type well regions are disposed at intervals on the surface of the first N-type well region, and a P-type well region is disposed at intervals between the two second N-type well regions.

[0013] In one embodiment, the P-type well region is disposed in the second groove of the epitaxial layer between the two second N-type well regions.

[0014] In one embodiment, a trench is provided between each of the second N-type well regions and the P-type well region.

[0015] In one embodiment, the epitaxial layer has a first outer surface and a second outer surface disposed opposite to each other;

[0016] The first N-type well region is disposed close to the first outer surface, and two second N-type well regions are disposed at intervals on the surface of the first N-type well region that is away from the first outer surface.

[0017] The first high-voltage resistor is disposed on the second outer surface.

[0018] In one embodiment, the first high-voltage resistor includes:

[0019] A first oxide layer is disposed on the second outer surface;

[0020] Two first metal regions are spaced apart on the surface of the first oxide layer away from the epitaxial layer;

[0021] A second oxide layer is disposed on the surface of the first oxide layer away from the epitaxial layer and covers the two first metal regions;

[0022] The second metal region is disposed within the second oxide layer and is spaced apart from the two first metal regions.

[0023] In one embodiment, a connecting via is provided between the two first metal regions and the second metal region respectively; wherein, the two first metal regions serve as the two ends of the first high-voltage resistor.

[0024] In one embodiment, a trench is provided between the first oxide layer and the second N-type well region.

[0025] In one embodiment, the lightning protection device further includes:

[0026] The second high-voltage resistor has the same structure as the first high-voltage resistor;

[0027] The third power diode has the same structure as the first power diode;

[0028] The fourth power diode has the same structure as the first power diode.

[0029] In one embodiment, one end of the first high-voltage resistor serves as the non-inverting input terminal of the lightning protection device, and the other end of the first high-voltage resistor is connected to the non-inverting input terminal of the protected device.

[0030] One end of the second high-voltage resistor serves as the inverting input terminal of the lightning protection device, and the other end of the second high-voltage resistor is connected to the inverting input terminal of the protected device. The other end of the second high-voltage resistor is connected to the anode of the third power diode and the cathode of the fourth power diode. The cathode of the third power diode is connected to the power supply terminal of the protected device, and the anode of the fourth power diode is connected to the ground terminal of the protected device.

[0031] The beneficial effects of this utility model embodiment compared with the prior art are:

[0032] Within the epitaxial layer, two second N-type well regions are connected through a first N-type well region. The first N-type well region, the two second N-type well regions, the two N-type injection regions, the P-type well region, and the P-type injection region form the structure of the first power diode.

[0033] In the first power diode, the P-type injection region serves as the anode. The two second N-type well regions are connected, allowing both N-type injection regions to serve as the cathode of the first power diode.

[0034] The structure of the second power diode is the same as that of the first power diode. Both the first and second power diodes are disposed within the epitaxial layer, and the first high-voltage resistor is disposed on the outer surface of the epitaxial layer, thus realizing a structure in which two power diodes and a high-voltage resistor are disposed on the same epitaxial layer. One end of the first high-voltage resistor serves as the input terminal of the lightning protection device. The other end of the first high-voltage resistor is connected to the anode of the first power diode, the cathode of the second power diode, and the input terminal of the protected device. The cathode of the first power diode is connected to the power supply terminal of the protected device. The anode of the second power diode is connected to the ground terminal of the protected device.

[0035] When a lightning surge occurs at the input terminal of a lightning protection device, the first high-voltage resistor can withstand a large voltage and limit the current. Simultaneously, the first or second power diode will conduct, discharging the current to the power supply or grounding circuit. Furthermore, through the first high-voltage resistor, the first power diode, and the second power diode in the lightning protection device, the voltage at the input terminal can be limited to a potential one diode forward voltage higher than the power supply terminal or one diode forward voltage lower than the grounding terminal, protecting the protected device from the impact of instantaneous high voltage or large current caused by a lightning surge.

[0036] Furthermore, through the structure between the first high-voltage resistor, the first power diode, and the second power diode, a lightning protection device is formed at the input terminal of the protected device, providing protection for the protected device. Thus, the lightning protection device provided in this application eliminates the need for a transient voltage suppressor (TVS), reducing the device area. Simultaneously, the lightning protection device provided in this application utilizes the clamping characteristics of the first high-voltage resistor, the first power diode, and the second power diode to improve integration and reliability, solving the problem of large area occupation and integration difficulties associated with TVS, and meeting the integration requirements of modern electronic devices. Attached Figure Description

[0037] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or exemplary technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 The circuit connection diagrams of the lightning protection devices provided in some embodiments of this application are shown.

[0039] Figure 2 The following are schematic diagrams of the lightning protection devices provided in some embodiments of this application.

[0040] Figure 3 The diagram shows the structure of the high-voltage resistor in some embodiments provided in this application. Detailed Implementation

[0041] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0042] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0043] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0044] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include one or more of that feature. Additionally, in the embodiments of this application, the terms "first" and "second" are used to distinguish identical or similar items that have substantially the same function and effect. Those skilled in the art will understand that the terms "first" and "second" do not limit the quantity or order of execution, and that "first" and "second" do not necessarily imply difference.

[0045] In the description of this application, unless otherwise stated, " / " indicates that the objects before and after it are in an "or" relationship. For example, A / B can mean A or B. "And / or" in this application is merely a description of the relationship between the related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone, where A and B can be singular or plural. Furthermore, in the description of this application, unless otherwise stated, "multiple" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can represent: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0046] Please see Figure 1 and Figure 2This application provides a lightning protection device. The lightning protection device includes an epitaxial layer 101, a first N-type well region 102, two second N-type well regions 103, an N-type injection region 104, a P-type well region 105, and a P-type injection region 106. The first N-type well region 102 is disposed within the epitaxial layer 101. Two second N-type well regions 103 and a P-type well region 105 are spaced apart on the surface of the first N-type well region 102. The two second N-type well regions 103 are connected through the first N-type well region 102. An N-type injection region 104 is disposed within each second N-type well region 103. The N-type injection region 104 serves as the cathode of a first power diode 20.

[0047] A P-type injection region 106 is disposed within the P-type well region 105. The P-type injection region 106 serves as the anode of the first power diode 20, and a second power diode 30 is disposed within the epitaxial layer 101. The structure of the second power diode 30 is the same as that of the first power diode 20. A first high-voltage resistor 10 is disposed on the outer surface of the epitaxial layer 101.

[0048] In this design, one end of the first high-voltage resistor 10 serves as the input terminal of the lightning protection device. The other end of the first high-voltage resistor 10 is connected to the input terminal of the protected device 40. The other end of the first high-voltage resistor 10 is connected to the anode of the first power diode 20 and the cathode of the second power diode 30. The cathode of the first power diode 20 is connected to the power supply terminal of the protected device 40. The anode of the second power diode 30 is connected to the ground terminal of the protected device 40.

[0049] In this embodiment, two second N-type well regions 103 within the epitaxial layer 101 are connected through a first N-type well region 102. The first N-type well region 102, the two second N-type well regions 103, the two N-type injection regions 104, the P-type well region 105, and the P-type injection region 106 form the structure of the first power diode 20.

[0050] In the first power diode 20, the P-type injection region 106 serves as the anode of the first power diode 20, and the two second N-type well regions 103 are connected through the first N-type well region 102, so that the two N-type injection regions 104 can serve as the cathode of the first power diode 20.

[0051] The structure of the second power diode 30 is the same as that of the first power diode 20. Both the first power diode 20 and the second power diode 30 are disposed within the epitaxial layer 101, and the first high-voltage resistor 10 is disposed on the outer surface of the epitaxial layer 101, thus realizing a structure where two power diodes and a high-voltage resistor are respectively disposed on the same epitaxial layer 101. One end of the first high-voltage resistor 10 serves as the input terminal INP of the lightning protection device. The other end of the first high-voltage resistor 10 is connected to the anode of the first power diode 20, the cathode of the second power diode 30, and the input terminal IN1 of the protected device 40. The cathode of the first power diode 20 is connected to the power supply terminal of the protected device 40. The anode of the second power diode 30 is connected to the ground terminal of the protected device 40.

[0052] When a lightning surge occurs at the input terminal INP of the lightning protection device, the first high-voltage resistor 10 can withstand a large voltage and limit the current. Simultaneously, the first power diode 20 or the second power diode 30 will conduct, discharging the current to the power supply or grounding circuit. Furthermore, through the first high-voltage resistor 10, the first power diode 20, and the second power diode 30 in the lightning protection device, the voltage at the input terminal INP can be limited to a potential one diode forward voltage higher than the power supply terminal or one diode forward voltage lower than the grounding terminal, protecting the protected device 40 from the impact of instantaneous high voltage or large current caused by the lightning surge.

[0053] Furthermore, through the structure of the first high-voltage resistor 10, the first power diode 20, and the second power diode 30, a lightning protection device is formed at the input terminal of the protected device 40, providing protection for the protected device 40. Thus, the lightning protection device provided in this application eliminates the need for a transient voltage suppressor (TVS), reducing the device area. Simultaneously, the lightning protection device provided in this application utilizes the clamping characteristics of the first high-voltage resistor 10, the first power diode 20, and the second power diode 30 to improve integration and reliability, solving the problem of large area occupation and integration difficulties associated with TVS, and meeting the integration requirements of modern electronic devices.

[0054] In one embodiment, epitaxial layer 101 is a P-type doped epitaxial layer.

[0055] In one embodiment, one end of the first high-voltage resistor 10 serves as the non-inverting input terminal of the lightning protection device. The other end of the first high-voltage resistor 10 is connected to the anode of the first power diode 20, the cathode of the second power diode 30, and the non-inverting input terminal of the protected device 40.

[0056] In one embodiment, the power supply terminal of the protected device 40 is connected to a positive DC power supply VCC. The ground terminal of the protected device 40 is connected to DC ground GND.

[0057] In one embodiment, the surge protection device is an integrable port surge protection device conforming to the DO-160G standard.

[0058] Please see Figure 2 In one embodiment, a first N-type well region 102 is disposed within a first groove 1013 of the epitaxial layer 101. Two second N-type well regions 103 are disposed at intervals on the surface of the first N-type well region 102, and a P-type well region 105 is disposed at intervals between the two second N-type well regions 103.

[0059] In this embodiment, the first power diode 20 includes a first N-type well region 102, two second N-type well regions 103, two N-type injection regions 104, a P-type well region 105, and a P-type injection region 106. The structure of the second power diode 30 is the same as that of the first power diode 20, and also includes a first N-type well region 102, two second N-type well regions 103, two N-type injection regions 104, a P-type well region 105, and a P-type injection region 106.

[0060] The first N-type well region 102 is disposed within the first groove 1013 of the epitaxial layer 101, or it can be understood as being disposed within the epitaxial layer 101. Two second N-type well regions 103 are tangentially disposed on the surface of the first N-type well region 102. Two N-type injection regions 104 are respectively disposed within the two second N-type well regions 103. By distributing two second N-type well regions 103 at intervals on the surface of the first N-type well region 102, it is beneficial to achieve isolation, protection, optimized circuit performance, and convenient process integration.

[0061] In one embodiment, a P-type well region 105 is provided in the second groove 1014 of the epitaxial layer 101 between the two second N-type well regions 103.

[0062] In this embodiment, a second groove 101 is further provided in the epitaxial layer 101 between the two second N-type well regions 103. A P-type well region 105 is provided within the second groove 1014. A P-type implantation region 106 is provided within the P-type well region 105. The second groove 1014 separates the second N-type well regions 103 and the P-type well regions 105. The epitaxial layer 101 between the second N-type well regions 103 and the P-type well regions 105 can act as a buffer, improving the stability and reliability of the device.

[0063] In one embodiment, a trench 201 is provided between each second N-type well region 103 and the P-type well region 105.

[0064] In this embodiment, the trench 201 serves as an isolation point between the second N-type well region 103 and the P-type well region 105. Electrical isolation between them can be achieved by filling the trench 201 with an insulating material, such as silicon dioxide.

[0065] In one embodiment, the epitaxial layer 101 has a first outer surface 1011 and a second outer surface 1012 disposed opposite to each other. A first N-type well region 102 is disposed close to the first outer surface 1011. Two second N-type well regions 103 are disposed spaced apart on the surface of the first N-type well region 102 away from the first outer surface 1011. A first high-voltage resistor 10 is disposed on the second outer surface 1012.

[0066] In this embodiment, the first N-type well region 102 is disposed within the epitaxial layer 101, and is located on the side closest to the first outer surface 1011. The first high-voltage resistor 10 is disposed on the second outer surface 1012, such that the first high-voltage resistor 10, the first power diode 20, and the second power diode 30 are all disposed on the same epitaxial layer 101. Furthermore, the structures of the first high-voltage resistor 10, the first power diode 20, and the second power diode 30 can be fabricated on the same epitaxial layer 101, reducing the occupied area and improving the device integration density.

[0067] Please see Figure 3 In one embodiment, the first high-voltage resistor 10 includes a first oxide layer 301, two first metal regions 401, a second oxide layer 302, and a second metal region 402. The first oxide layer 301 is disposed on the second outer surface 1012. The two first metal regions 401 are disposed at intervals on the surface of the first oxide layer 301 away from the epitaxial layer 101. The second oxide layer 302 is disposed on the surface of the first oxide layer 301 away from the epitaxial layer 101 and covers the two first metal regions 401. The second metal region 402 is disposed within the second oxide layer 302 and is disposed at intervals from the two first metal regions 401.

[0068] In this embodiment, the first high-voltage resistor 10 is a thin-film resistor structure. A first oxide layer 301, two first metal regions 401, a second oxide layer 302, and a second metal region 402 are sequentially disposed on the second outer surface 1012 of the epitaxial layer 101. The two first metal regions 401 are the two connection terminals of the first high-voltage resistor 10, which can be respectively led out and connected to the first power diode 20 and the second power diode 30 to realize the circuit structure connection.

[0069] The first oxide layer 301 is disposed between the second outer surface 1012 and the two first metal regions 401, serving as an insulating layer. The second oxide layer 302 covers the two first metal regions 401, and the second metal region 402 is disposed within the second oxide layer 302. The two first metal regions 401 and the second metal region 402 are insulated from each other by the second oxide layer 302.

[0070] In one embodiment, the first oxide layer 301 and the second oxide layer 302 can be silicon dioxide, which can play the roles of insulation, isolation and protection.

[0071] In one embodiment, a connecting through-hole 501 is provided between the two first metal regions 401 and the second metal region 402 respectively. The two first metal regions 401 serve as the two ends of the first high-voltage resistor 10.

[0072] In this embodiment, the two first metal regions 401 and the second metal region 402 are insulated from each other by the second oxide layer 302. The two connecting vias 501 can be filled with conductive material to connect the two first metal regions 401 to the second metal region 402 respectively, and bring out the two connecting terminals of the first high-voltage resistor 10 to facilitate connection with the first power diode 20 and the second power diode 30, so as to realize the connection of the circuit structure.

[0073] In one embodiment, a trench 201 is provided between the first oxide layer 301 and the second N-type well region 103.

[0074] In this embodiment, the trench 201 serves as an isolation layer between the first oxide layer 301 and the second N-type well region 103. By filling the trench 201 with an insulating material, such as silicon dioxide, electrical isolation between them can be achieved, thus isolating the first high-voltage resistor 10 from the second power diode 30.

[0075] In one embodiment, the lightning protection device further includes a second high-voltage resistor 50, a third power diode 60, and a fourth power diode 70, as shown in [reference needed]. Figure 1 The second high-voltage resistor 50 has the same structure as the first high-voltage resistor 10. The third power diode 60 and the fourth power diode 70 have the same structure as the first power diode 20 and the second power diode 30.

[0076] In this embodiment, both the second high-voltage resistor 50 and the first high-voltage resistor 10 are thin-film resistor structures, and their structures are identical. (Refer to the previous section.) Figure 2 The structure shown. The second high-voltage resistor 50 also includes a first oxide layer 301, two first metal regions 401, a second oxide layer 302, a second metal region 402, and a connecting via 501.

[0077] The structure between the third power diode 60 and the fourth power diode 70, as well as the structure between the first power diode 20 and the second power diode 30, are the same and can be referred to. Figure 2 The structure is shown. The third power diode 60 also includes a first N-type well region 102, two second N-type well regions 103, two N-type injection regions 104, a P-type well region 105, and a P-type injection region 106. The fourth power diode 70 also includes a first N-type well region 102, two second N-type well regions 103, two N-type injection regions 104, a P-type well region 105, and a P-type injection region 106.

[0078] In one embodiment, one end of the first high-voltage resistor 10 serves as the non-inverting input terminal of the lightning protection device. The other end of the first high-voltage resistor 10 is connected to the non-inverting input terminal of the protected device 40. One end of the second high-voltage resistor 50 serves as the inverting input terminal INN of the lightning protection device. The other end of the second high-voltage resistor 50 is connected to the inverting input terminal IN2 of the protected device 40. The other end of the second high-voltage resistor 50 is connected to the anode terminal of the third power diode 60 and the cathode terminal of the fourth power diode 70. The cathode terminal of the third power diode 60 is connected to the power supply terminal of the protected device 40, and the anode terminal of the fourth power diode 70 is connected to the ground terminal of the protected device 40.

[0079] In this embodiment, according to Figure 2 The high-voltage resistor structure and power diode structure shown form a first high-voltage resistor 10 and a first power diode 20. The structures of the second power diode 30, the third power diode 60, and the fourth power diode 70 are all the same as the structure of the first power diode 20. The second high-voltage resistor 50 has the same structure as the first high-voltage resistor 10.

[0080] Arrange the first high-voltage resistor 10, the first power diode 20, the second power diode 30, the second high-voltage resistor 50, the third power diode 60, and the fourth power diode 70 in the following order: Figure 1 The lightning protection device of this application can be formed by connecting the circuit diagram shown. The lightning protection device conforms to the DO-160G standard.

[0081] In one embodiment, the first high-voltage resistor 10, the first power diode 20, the second power diode 30, the second high-voltage resistor 50, the third power diode 60, and the fourth power diode 70 are integrated on a P-type doped epitaxial layer 101. The presence of a resistor structure with two high-voltage resistors and a power diode structure on the epitaxial layer 101 reduces the occupied area and improves the integration density of the lightning protection device of this application.

[0082] The lightning protection device provided in this application avoids the need for a transient voltage suppressor (TVS). By using a high-voltage resistor and a power diode, it reduces device area overhead while improving reliability, increasing device integration and reliability, broadening its applicability, and enhancing chip compatibility.

[0083] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0084] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0085] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A lightning protection device, characterized in that, include: An epitaxial layer (101) is provided in which a first N-type well region (102) is provided. Two second N-type well regions (103) and a P-type well region (105) are provided on the surface of the first N-type well region (102) at intervals. The two second N-type well regions (103) are connected through the first N-type well region (102). Each of the second N-type well regions (103) is provided with an N-type injection region (104); wherein the N-type injection region (104) serves as the cathode of the first power diode (20); A P-type injection region (106) is provided in the P-type well region (105); wherein, the P-type injection region (106) serves as the anode of the first power diode (20); A second power diode (30) is disposed within the epitaxial layer (101), and the structure of the second power diode (30) is the same as that of the first power diode (20). A first high-voltage resistor (10) is disposed on the outer surface of the epitaxial layer (101); Wherein, one end of the first high-voltage resistor (10) serves as the input terminal of the lightning protection device, the other end of the first high-voltage resistor (10) is connected to the input terminal of the protected device (40), the other end of the first high-voltage resistor (10) is connected to the anode of the first power diode (20) and the cathode of the second power diode (30), the cathode of the first power diode (20) is connected to the power supply terminal of the protected device (40), and the anode of the second power diode (30) is connected to the ground terminal of the protected device (40).

2. The lightning protection device as described in claim 1, characterized in that, The first N-type well region (102) is disposed in the first groove (1013) of the epitaxial layer (101), two second N-type well regions (103) are disposed at intervals on the surface of the first N-type well region (102), and the P-type well region (105) is disposed at intervals between the two second N-type well regions (103).

3. The lightning protection device as described in claim 2, characterized in that, The P-type well region (105) is disposed in the second groove (1014) of the epitaxial layer (101) between the two second N-type well regions (103).

4. The lightning protection device as described in claim 1, characterized in that, A trench (201) is provided between each of the second N-type well regions (103) and the P-type well regions (105).

5. The lightning protection device as described in claim 2, characterized in that, The epitaxial layer (101) has a first outer surface (1011) and a second outer surface (1012) disposed opposite to each other; The first N-type well region (102) is disposed close to the first outer surface (1011), and two second N-type well regions (103) are disposed at intervals on the surface of the first N-type well region (102) away from the first outer surface (1011); The first high-voltage resistor (10) is disposed on the second outer surface (1012).

6. The lightning protection device as described in claim 5, characterized in that, The first high-voltage resistor (10) includes: A first oxide layer (301) is disposed on the second outer surface (1012); Two first metal regions (401) are disposed at intervals on the surface of the first oxide layer (301) away from the epitaxial layer (101); A second oxide layer (302) is disposed on the surface of the first oxide layer (301) away from the epitaxial layer (101) and covers the two first metal regions (401); The second metal region (402) is disposed within the second oxide layer (302) and is spaced apart from the two first metal regions (401).

7. The lightning protection device as described in claim 6, characterized in that, A connecting through hole (501) is provided between the two first metal regions (401) and the second metal region (402); wherein the two first metal regions (401) serve as the two ends of the first high voltage resistor (10).

8. The lightning protection device as described in claim 6, characterized in that, A trench (201) is provided between the first oxide layer (301) and the second N-type well region (103).

9. The lightning protection device as described in any one of claims 6 to 8, characterized in that, The lightning protection device also includes: The second high-voltage resistor (50) has the same structure as the first high-voltage resistor (10); The third power diode (60) has the same structure as the first power diode (20); The fourth power diode (70) has the same structure as the first power diode (20).

10. The lightning protection device as described in claim 9, characterized in that, One end of the first high-voltage resistor (10) serves as the non-inverting input terminal of the lightning protection device, and the other end of the first high-voltage resistor (10) is connected to the non-inverting input terminal of the protected device (40). One end of the second high-voltage resistor (50) serves as the inverting input terminal of the lightning protection device, and the other end of the second high-voltage resistor (50) is connected to the inverting input terminal of the protected device (40). The other end of the second high-voltage resistor (50) is connected to the anode of the third power diode (60) and the cathode of the fourth power diode (70). The cathode of the third power diode (60) is connected to the power supply terminal of the protected device (40), and the anode of the fourth power diode (70) is connected to the ground terminal of the protected device (40).

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