Radio frequency probe suitable for CBGA package tube shell SiP microwave module test

Abstract

This utility model relates to an RF probe suitable for testing CBGA-packaged SiP microwave modules. The utility model includes a bobbin case, a polytetrafluoroethylene (PTFE) dielectric material, an oxygen-free copper shield, a semi-steel cable, and a 2.92 mmWave RF connector. One port of the bobbin case is elastically interconnected with the RF and ground ports of the CBGA-packaged SiP microwave module, and the other port is elastically interconnected with the inner conductor of the semi-steel cable and the oxygen-free copper shield. The bobbin case and the PTFE dielectric material have a transition fit; the PTFE dielectric material and one mounting hole of the oxygen-free copper shield have a transition fit; the second mounting hole of the oxygen-free copper shield has a transition fit with the dielectric layer of the semi-steel cable; the oxygen-free copper shield and the shielding layer of the semi-steel cable are interconnected by solder; and the shielding layer of the semi-steel cable is interconnected by solder. This utility model solves the problems of high cost and poor performance when using testing fixtures for CBGA-packaged SiP microwave modules.

Description

Technical Field

[0001] This utility model relates to an RF probe, specifically an RF probe suitable for testing CBGA packaged SiP microwave modules, belonging to the field of RF component technology. Background Technology

[0002] Driven by the increasing demand for miniaturization, lightweighting, high integration, high reliability, and low cost in military and civilian electronic equipment such as active phased array radars, especially in multi-platform applications like airborne, shipborne, and spaceborne systems, as well as electronic warfare, the miniaturization and lightweighting of microwave modules, a core component of radar, is becoming increasingly urgent. System-in-Package (SiP) technology combines and mounts chips with different functions in various ways within a housing, integrating digital, analog, and RF components within the same package, and enabling three-dimensional assembly. CBGA (Ceramic Ball Grid Array) uses solder balls instead of metal pins in a coaxial, area-array manner, significantly increasing the number of I / O ports while achieving high-quality RF transmission performance, making it the optimal choice for SiP microwave module packaging. Traditional testing of CBGA-packaged SiP modules typically involves testing with a test board and test fixture or an RF probe station. The former introduces testing errors due to the intermediate medium of the test board, while the latter has higher procurement costs. Therefore, to address these issues, this invention proposes a new RF probe for testing CBGA-packaged microwave modules. Summary of the Invention

[0003] This invention addresses the technical problems existing in the prior art by providing an RF probe suitable for testing CBGA-packaged SiP microwave modules. This solution features a simple structure, good RF performance, low cost, and easy disassembly. The use of a button-like transition solves the problems of high cost and poor performance when using testing fixtures for CBGA-packaged SiP microwave modules.

[0004] To achieve the above objectives, the technical solution of this utility model is as follows:

[0005] An RF probe suitable for testing CBGA packaged SiP microwave modules, the RF probe comprising a hair button, polytetrafluoroethylene dielectric material, oxygen-free copper shield, semi-steel cable, and 2.92 mmWave RF connector.

[0006] The semi-steel cable includes, from the inside out, an inner conductor, a semi-steel cable dielectric layer, and a semi-steel cable shielding layer; one side of the oxygen-free copper shielding cover is provided with an oxygen-free copper shielding cover mounting hole one, and the other side is provided with an oxygen-free copper shielding cover mounting hole two.

[0007] One port of the button is elastically interconnected with the CBGA packaged radio frequency port or the CBGA packaged ground port of the SiP microwave module, and the other port is elastically interconnected with the inner conductor of the semi-steel cable and the oxygen-free copper shield. The button is transitionally fitted with the polytetrafluoroethylene dielectric material, the polytetrafluoroethylene dielectric material is transitionally fitted with the first mounting hole of the oxygen-free copper shield, the second mounting hole of the oxygen-free copper shield is transitionally fitted with the dielectric layer of the semi-steel cable, the oxygen-free copper shield and the shielding layer of the semi-steel cable are interconnected by solder, and the shielding layer of the semi-steel cable is interconnected with the 2.92 mmWave RF connector by solder.

[0008] As an improvement of this utility model, the diameter of the bobbin is the same as the diameter of the mounting hole of the polytetrafluoroethylene dielectric material, the diameter of the CBGA package RF port, and the diameter of the pad of the CBGA package ground port.

[0009] As an improvement of this utility model, the length of the raw button is 0.2mm ± 0.05mm longer than the polytetrafluoroethylene dielectric material.

[0010] As an improvement of this utility model, the inner conductor of the semi-steel cable protrudes 0.1mm±0.02mm from the dielectric layer, and the protruding inner conductor end face is smooth, without burrs, chamfers, or rolled edges.

[0011] As an improvement of this utility model, the oxygen-free copper shielding cover and the solder interconnecting the semi-steel cable shielding layer are pre-wound Sn43Pb43Bi14 low-temperature solder wires.

[0012] As an improvement of this utility model, before the semi-steel cable is formed, it should be preheated in a forced-air drying oven at 85℃±5℃ for 3min±30s to remove the protruding excess dielectric layer.

[0013] As an improvement of this utility model, the thickness of the second mounting hole of the oxygen-free copper shield is the same as the protruding length of the semi-steel cable dielectric layer; the oxygen-free copper shield and the semi-steel cable shield are welded to the semi-steel cable dielectric layer at 250℃±5℃ for 5s. Through the above method, better coaxial matching can be obtained.

[0014] Compared with the prior art, this utility model has the following advantages: 1) The overall structure of this technical solution is compact and ingenious. This solution is designed with a special RF probe based on the characteristics of the back of the CBGA packaged SiP microwave module. When this probe is used, the electrical performance of the CBGA packaged SiP microwave module can be adjusted and tested; 2) This utility model has a simple structure, good RF performance, and is easy to disassemble; 3) This utility model has an ingenious structural design. In this way, it solves the problem that the traditional CBGA packaged SiP module test uses a test board + test fixture, which has an intermediate medium in the test board and has test errors, and the RF probe station has a high procurement cost; 4) This technical solution has a low cost and is easy to promote and apply. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of an RF probe suitable for testing CBGA packaged SiP microwave modules.

[0016] Figure 2 This is a schematic diagram of a RF probe suitable for testing CBGA packaged SiP microwave modules.

[0017] Figure 3 This is a schematic diagram of the polytetrafluoroethylene dielectric material of an RF probe suitable for testing CBGA packaged SiP microwave modules.

[0018] Figure 4 This is a schematic diagram of an oxygen-free copper shielding cover for an RF probe suitable for testing CBGA packaged SiP microwave modules.

[0019] Figure 5 This is a schematic diagram of a semi-steel cable and a 2.92 mm wave RF connector for an RF probe suitable for testing CBGA packaged SiP microwave modules.

[0020] Figure 6 This is a schematic diagram of a CBGA packaged shell for testing an RF probe suitable for SiP microwave modules with CBGA package.

[0021] In the diagram: 1. Hair button, 2. PTFE dielectric material, 3. Oxygen-free copper shield, 4. Solder, 5. Semi-steel cable, 6. 2.92 mmWave RF connector, 7. PTFE dielectric material mounting hole, 8. Oxygen-free copper shield mounting hole one, 9. Oxygen-free copper shield mounting hole two, 10. Semi-steel cable inner conductor, 11. Semi-steel cable dielectric layer, 12. Semi-steel cable shield layer, 13. CBGA packaged shell RF port, 14. CBGA packaged shell ground port, 15. CBGA packaged shell SiP microwave module. Detailed Implementation

[0022] To enhance understanding of this invention, the following detailed description of the embodiment is provided in conjunction with the accompanying drawings.

[0023] Example 1: See Figures 1-6 A radio frequency (RF) probe for testing CBGA-packaged SiP microwave modules is characterized in that the RF probe comprises a button 1, a polytetrafluoroethylene (PTFE) dielectric material 2, an oxygen-free copper shield 3, a semi-steel cable 5, and a 2.92 mmWave RF connector 6. One port of the button 1 is elastically interconnected with the CBGA-packaged SiP microwave module 15 at either the CBGA-packaged RF port 13 or the CBGA-packaged ground port 14. The other port is elastically interconnected with the inner conductor 10 of the semi-steel cable 5 and the oxygen-free copper shield 3. The button 1 and the PTFE dielectric material 2 have a transition fit; the PTFE dielectric material 2 has a transition fit with the oxygen-free copper shield mounting hole 8; the oxygen-free copper shield mounting hole 9 has a transition fit with the semi-steel cable dielectric layer 11; the oxygen-free copper shield 3 and the semi-steel cable shield layer 12 are interconnected via solder 4; and the semi-steel cable shield layer 12 is interconnected with the 2.92 mmWave RF connector 6 via solder 4.

[0024] The assembly sequence of the RF probes for testing the CBGA-packaged SiP microwave module is as follows: 1. Preheat the semi-steel cable in an 85℃±5℃ drying oven for 3 min±30 s, then remove any protruding excess dielectric layer; 2. Assemble the .92 mmWave RF connector with the semi-steel cable according to standard operating instructions; 3. Repair the protruding inner conductor end face of the other end of the semi-steel cable, removing burrs, chamfers, and rolled edges; 4. Preheat the oxygen-free copper shield and the semi-steel cable from step 3 in an 85℃±5℃ drying oven for 3 min±3 s. After 0 seconds, the oxygen-free copper shield and the shielding layer of the semi-steel cable are welded together using pre-wound Sn43Pb43Bi14 low-temperature solder wire at a welding temperature of 250℃±5℃ and a welding time of ≤5 seconds; 5. Insert the bobbin into the pore of the polytetrafluoroethylene dielectric material under a stereomicroscope to ensure that the bobbin extends approximately 0.1mm±0.05mm beyond the polytetrafluoroethylene dielectric material; 6. Assemble the polytetrafluoroethylene dielectric material completed in step 5 into the oxygen-free copper shield mounting hole 1 in step 4. The RF probe assembly is now complete.

[0025] Example 2: See Figures 1-3 In this embodiment, the diameter 1 of the bobbin case is the same as the aperture of the polytetrafluoroethylene dielectric material 2, and the diameter of the RF 13 and ground 14 port pads of the CBGA packaged shell 15SiP microwave module is the same, satisfying the requirements. (d is the diameter of the button, D is the center distance between the RF and ground ports of the CBGA packaged SiP microwave module) In the dielectric constant of polytetrafluoroethylene dielectric materials The impedance requirement is 50Ω. The rest of the structure and advantages are exactly the same as in Example 1.

[0026] Example 3: See Figures 1-3 In this embodiment, the length of the bobby button 1 is 0.2mm ± 0.05mm longer than the PTFE dielectric material 2. The bobby button 1 extends approximately 0.1mm ± 0.05mm beyond the PTFE dielectric material 2. This ensures sufficient contact between the bobby button 1 and the RF 13, ground 14 ports, the inner conductor 10 of the semi-steel cable 5, and the oxygen-free copper shield 3 of the CBGA packaged shell 15SiP microwave module, while also preventing signal leakage. The remaining structure and advantages are exactly the same as in Embodiment 1.

[0027] Example 4: See Figure 5 As an improvement of this utility model, the inner conductor 10 of the semi-steel cable 5 protrudes 0.1mm ± 0.02mm from the dielectric layer. The end face of the protruding inner conductor 10 is smooth, without burrs, chamfers, or rolled edges, to prevent signal leakage from the inner conductor 10 of the semi-steel cable 5 due to the above reasons. The remaining structure and advantages are exactly the same as in Embodiment 1.

[0028] Example 5: See Figure 1 , Figure 4 , Figure 5 In this embodiment, the solder connecting the oxygen-free copper shield 3 and the shielding layer 12 of the semi-steel cable 5 is a pre-wound Sn43Pb43Bi14 low-temperature solder wire 4. The solder wire 4 has a melting point of 144-163℃ and a welding temperature of 250℃±5℃. By winding the pre-wound low-temperature solder wire 4, the oxygen-free copper shield 3 and the shielding layer 12 of the semi-steel cable 5 can be quickly interconnected at low temperature, avoiding the dielectric layer 11 of the semi-steel cable 5 from expanding and bulging due to heat, which would affect the electrical performance.

[0029] Example 6: See Figure 1 , Figure 4 , Figure 5 In this embodiment, before forming the semi-steel cable 5, it should be preheated in a forced-air drying oven at 85℃±5℃ for 3min±30s to remove the protruding excess dielectric layer 11. This prevents the dielectric layer 11 of the semi-steel cable 5 from expanding and protruding due to heat after the RF probe is heated, extruding the polytetrafluoroethylene dielectric material 2 and affecting the electrical performance. The thickness of the mounting holes 2,9 of the oxygen-free copper shield is the same as the protruding length of the dielectric layer 11 of the semi-steel cable 5. The length of the dielectric layer 11 of the semi-steel cable 5 is obtained by welding the oxygen-free copper shield 3 and the shielding layer 12 of the semi-steel cable 5 at 250℃±5℃ for 5s after removing the protruding excess dielectric layer 11. Through the above method, better coaxial matching can be obtained.

[0030] This utility model can also combine at least one of the technical features described in Embodiments 2, 3, 4, and 5 with Embodiment 1 to form a new implementation method.

[0031] It should be noted that the above embodiments are not intended to limit the scope of protection of this utility model. Equivalent transformations or substitutions made based on the above technical solutions all fall within the scope of protection of the claims of this utility model.

Claims

1. An RF probe suitable for testing CBGA-packaged SiP microwave modules, characterized in that, The radio frequency probe includes a hair button (1), a polytetrafluoroethylene dielectric material (2), an oxygen-free copper shield (3), a semi-steel cable (5), and a 2.92 mm wave radio frequency connector (6). The semi-steel cable (5) includes, from the inside out, an inner conductor (10), a semi-steel cable dielectric layer (11), and a semi-steel cable shielding layer (12); the oxygen-free copper shielding cover (3) has an oxygen-free copper shielding cover mounting hole one (8) on one side and an oxygen-free copper shielding cover mounting hole two (9) on the other side. One port of the button (1) is elastically interconnected with the CBGA packaged shell radio frequency port (13) or the CBGA packaged shell ground port (14) of the CBGA packaged shell SiP microwave module (15), and the other port is elastically interconnected with the inner conductor (10) and oxygen-free copper shield (3) of the semi-steel cable (5). The button (1) is transitionally fitted with the polytetrafluoroethylene dielectric material (2). The polytetrafluoroethylene dielectric material (2) is transitionally fitted with the first mounting hole (8) of the oxygen-free copper shield. The second mounting hole (9) of the oxygen-free copper shield is transitionally fitted with the dielectric layer (11) of the semi-steel cable. The oxygen-free copper shield (3) and the shield layer (12) of the semi-steel cable are interconnected by solder (4). The shield layer (12) of the semi-steel cable is interconnected with the 2.92 mm wave radio frequency connector (6) by solder (4).

2. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, The diameter of the hair button (1) is the same as the diameter of the mounting hole (7) of the polytetrafluoroethylene dielectric material, the diameter of the pad of the CBGA package RF port (13), and the diameter of the CBGA package ground port (14).

3. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, The length of the hair button (1) is 0.2 mm ± 0.05 mm longer than the polytetrafluoroethylene dielectric material (2).

4. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, The inner conductor (10) of the semi-steel cable (5) protrudes 0.1mm ± 0.02mm from the dielectric layer (11), and the protruding inner conductor (10) has a smooth end face without burrs, chamfers, or rolled edges.

5. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, The oxygen-free copper shield (3) and the solder (4) that connects to the semi-steel cable shield (12) are pre-wound Sn43Pb43Bi14 low-temperature solder wire.

6. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, Before forming the semi-steel cable (5), it should be preheated in a forced-air drying oven at 85℃±5℃ for 3min±30s, and then the protruding excess dielectric layer (11) should be removed.

7. The RF probe for testing CBGA-packaged SiP microwave modules according to claim 1, characterized in that, The thickness of the second (9) mounting hole of the oxygen-free copper shield is the same as the protrusion length of the semi-steel cable dielectric layer (11); the oxygen-free copper shield (3) and the semi-steel cable shield (12) are welded to the semi-steel cable dielectric layer (11) at 250℃±5℃ for 5s.

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