Solar cell and photovoltaic module

Abstract

The utility model discloses a solar cell and photovoltaic module, solar cell includes: silicon substrate has the first surface and second surface of opposite setting, the second surface includes the first area and second area of interval distribution, is equipped with the tunneling passivation structure on the first area, conductive layer, covers the tunneling passivation structure surface of first area and the silicon substrate surface of second area, first electrode, is located in first area and with conductive layer electric contact. The solar cell and photovoltaic module of the utility model can overcome the problem of metal paste burning through, improve the open circuit voltage and short circuit current of battery, reduce the series resistance of battery.

Claims

1. A solar cell, characterized in that, include: A silicon substrate has a first surface and a second surface disposed opposite to each other, the second surface including a first region and a second region spaced apart, and a tunneling passivation structure is provided on the first region; A conductive layer covers the surface of the tunneling passivation structure in the first region and the surface of the silicon substrate in the second region; A first electrode is disposed in the first region and is in electrical contact with the conductive layer.

2. The solar cell according to claim 1, characterized in that, The thickness of the conductive layer in the first region is equal to the thickness of the conductive layer in the second region; or, The sum of the thicknesses of the conductive layer in the first region and the tunneling passivation structure is equal to the thickness of the conductive layer in the second region.

3. The solar cell according to claim 1, characterized in that, The thickness of the conductive layer is 10nm~100nm or 20nm~80nm.

4. The solar cell according to claim 1, characterized in that, The conductive layer is a transparent conductive layer; or, The conductive layer includes any one or more combinations of a TCO conductive layer, a conductive polymer layer, a metal conductive layer, and a carbon-based material conductive layer; or, The conductive layer includes any one or more combinations of ITO conductive layer, AZO conductive layer, FTO conductive layer, IZO conductive layer, ATO conductive layer, and graphene conductive layer.

5. The solar cell according to claim 1, characterized in that, The tunneling passivation structure includes a tunneling layer in direct contact with the silicon substrate and a first doped layer disposed on the tunneling layer.

6. The solar cell according to claim 5, characterized in that, The first electrode penetrates the conductive layer and makes electrical contact with the first doped layer.

7. The solar cell according to claim 5, characterized in that, The thickness of the first doped layer is 10 nm to 80 nm; and / or, The first doped layer is a doped polycrystalline silicon layer, and the doping type is the same as that of the silicon substrate; and / or, The sheet resistance of the first doped layer is 20Ω / sq~100Ω / sq or 30Ω / sq~60Ω / sq; and / or, The thickness of the tunneling layer is 0.5 nm to 3 nm; and / or, The tunneling layer is one or more of silicon oxide layers and silicon oxynitride layers.

8. The solar cell according to claim 1, characterized in that, The conductive layer is provided with a first antireflection layer, which is a stacked film formed by any one or more of silicon nitride, silicon oxynitride, and silicon oxide layers, with a thickness of 50nm~80nm.

9. The solar cell according to claim 1, characterized in that, A second doped layer and a second electrode are formed on the first surface of the silicon substrate. The doping type of the second doped layer is opposite to that of the silicon substrate, and the second electrode is in contact with the second doped layer.

10. The solar cell according to claim 9, characterized in that, The sheet resistance of the second doped layer is 350Ω / sq~500Ω / sq or 400Ω / sq~500Ω / sq.

11. The solar cell according to claim 9, characterized in that, A passivation layer and / or a second antireflection layer are stacked on the second doped layer; wherein, The passivation layer is an aluminum oxide passivation layer with a thickness of 2nm~10nm, 2nm~7nm, or 3nm~6nm; the second antireflection layer is a stacked film formed by any one or more of silicon nitride, silicon oxynitride, and silicon oxide layers with a thickness of 10nm~130nm.

12. A photovoltaic module, characterized in that, The photovoltaic module includes a solar cell as described in any one of claims 1-11.

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