A semiconductor thin film deposition apparatus

Abstract

The utility model discloses a semiconductor thin film deposition equipment, semiconductor thin film deposition equipment, include: reaction cavity, its inside is provided with bearing table, the bearing table is used for bearing wafer, precursor gas supply device sets up in the top of reaction cavity, shower head sets up between bearing table and precursor gas supply device, annular sheltering structure is located between shower head and bearing table for sheltering the edge of wafer upper surface, inert gas gas supply device sets up in the edge outside of bearing table to the inert gas of druming into wafer back edge place, vacuum pump is used for extracting the gas in reaction cavity. The utility model can improve the temperature distribution uniformity of wafer surface in the process of thin film deposition, and improves the film layer uniformity after thin film deposition.

Description

Technical Field

[0001] This utility model relates to the field of semiconductors, and in particular to a semiconductor thin film deposition apparatus. Background Technology

[0002] In the thin-film deposition process for semiconductor integrated devices, it is necessary to form shallow trench isolation regions with a high aspect ratio to ensure that the deposited film has a smooth surface and excellent gap-filling performance. However, current thin-film deposition processes suffer from temperature fluctuations, resulting in poor film thickness uniformity and difficulties in controlling subsequent chemical mechanical polishing. Therefore, improvements are needed. Utility Model Content

[0003] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a semiconductor thin film deposition apparatus to improve the problem of poor film thickness uniformity in the prior art.

[0004] To achieve the above and other related objectives, this utility model provides a semiconductor thin film deposition apparatus, comprising:

[0005] The reaction chamber contains a support platform for supporting the wafer.

[0006] A precursor gas supply device is located at the top of the reaction chamber;

[0007] A spray head is disposed between the support platform and the precursor air supply device;

[0008] An annular shielding structure is located between the spray head and the support platform to shield the edge of the upper surface of the wafer;

[0009] An inert gas supply device is located on the outer edge of the support platform to blow inert gas into the back edge of the wafer.

[0010] A vacuum pump is used to extract the gas from the reaction chamber.

[0011] In one embodiment of this utility model, an outlet hole is formed on the side wall of the reaction chamber, and the inert gas supply device blows inert gas into the back edge of the wafer near the outlet hole; the vacuum pump is located outside the outlet hole.

[0012] In one embodiment of this utility model, the annular shielding structure is located inside the reaction chamber near the top of the vent hole;

[0013] After the support platform supports the wafer, an outflow channel is formed by the back edge of the wafer, the inner side of the reaction chamber near the bottom of the vent hole, the annular shielding structure, and the vent hole.

[0014] In one embodiment of this utility model, the number of vent holes is at least two, and the inert gas supply device blows inert gas into the back edge of the wafer near each vent hole.

[0015] In one embodiment of this utility model, at least two of the air outlets are symmetrically arranged on the sidewall of the reaction chamber.

[0016] In one embodiment of the present invention, the annular shielding structure includes a body and a protrusion, wherein the body is in the shape of a disc and the protrusion is in the shape of an annulus;

[0017] The body extends along the edge of the upper surface of the wafer toward the inner wall of the reaction chamber, and the protrusion extends along the edge of the upper surface of the wafer toward the top of the reaction chamber.

[0018] In one embodiment of this utility model, the spray head has multiple gas channels, and the spray head includes heating lamp beads, which are embedded in the spray head and intersect with the gas channels.

[0019] In one embodiment of this utility model, the number of heating lamp beads is multiple, and they form multiple concentric annular shapes with different radii on the spray head.

[0020] In one embodiment of this utility model, the spray head has multiple gas channels, and a regulating valve is provided in each gas channel.

[0021] In one embodiment of this utility model, the opening angle of the regulating valve is 0° to 90°.

[0022] As described above, the unexpected technical effect of the semiconductor thin film deposition equipment of this utility model is that, during the thin film deposition process, by increasing the thermal conductivity of the wafer edge contact, the temperature distribution on the wafer surface is improved to achieve uniformity, resulting in good uniformity of the film layer after deposition, thereby ensuring the control precision of chemical mechanical polishing. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the structure of uneven film thickness after deposition in the prior art.

[0024] Figure 2 This is a schematic diagram of the structure of a semiconductor thin film deposition apparatus provided in an embodiment of the present invention.

[0025] Figure 3 Provided for an embodiment of this utility model Figure 2 Enlarged diagram of point A in the middle.

[0026] Figure 4 This is a radial cross-sectional schematic diagram of an annular shielding structure provided in an embodiment of the present invention.

[0027] Figure 5 This is a bottom view schematic diagram of a spray head provided in an embodiment of the present utility model.

[0028] Figure 6 This is a schematic diagram of the gas passage and regulating valve in a spray head according to an embodiment of the present invention.

[0029] Figure 7 This is a schematic diagram of an electron scanning electron microscope (ESB) image of a semiconductor thin film deposited and then subjected to chemical mechanical polishing in the prior art.

[0030] Figure 8 This is an electron scanning schematic diagram of a semiconductor thin film deposited and then subjected to chemical mechanical polishing, according to an embodiment of the present invention.

[0031] 100. Membrane layer; 10. Reaction chamber; 110. Support platform; 120. Gas outlet; 20. Precursor gas supply device; 30. Spray head; 310. Gas channel; 320. Regulating valve; 330. Heating lamp; 40. Annular shielding structure; 410. Protrusion; 420. Body; 50. Inert gas supply device. Detailed Implementation

[0032] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0033] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0034] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the present invention.

[0035] Please see Figures 2 to 8 This invention proposes a semiconductor thin film deposition apparatus that can be applied in semiconductor thin film deposition processes. It can increase the thermal conductivity of wafer edge contacts during thin film deposition, thereby improving the uniformity of temperature distribution on the wafer surface, compared to... Figure 1 In cases of uneven film thickness, this application enables the deposition of a uniform film. Specific embodiments are described in detail below.

[0036] Please see Figure 2 In one embodiment of the present invention, a semiconductor thin film deposition apparatus is provided, which may include a reaction chamber 10, a precursor gas supply device 20, a spray head 30, an annular shielding structure 40, an inert gas supply device 50, and a vacuum pump.

[0037] Specifically, the reaction chamber 10 serves as a receiving cavity for wafer thin film deposition and can be used to connect the precursor gas supply device 20 and the vacuum pump. The reaction chamber 10 can also accommodate the spray head 30, the annular shielding structure 40, and the inert gas supply device 50. A support stage 110 can be installed inside the reaction chamber 10, which can be used to support the wafer, such as... Figure 2 As shown, the wafer is disposed on the surface of the support stage 110 and is located between the support stage 110 and the annular shielding structure 40.

[0038] Specifically, the precursor gas supply device 20 is disposed at the top of the reaction chamber 10 and is used to supply the precursor required for wafer thin film deposition into the reaction chamber 10. A precursor refers to a starting material or compound used to participate in a chemical reaction and ultimately transform into the desired product. In this embodiment, the precursor refers to a gas or volatile solid / liquid substance used in processes such as chemical vapor deposition (CVD) and atomic layer deposition (ALD). These precursor substances undergo chemical reactions under high temperature or other specific conditions to form a solid thin film deposited on the wafer surface. For example, in the fabrication of a silicon dioxide (SiO2) film, a silicon source precursor (such as silane SiH4) reacts with an oxygen source precursor (such as oxygen O2 or nitrous oxide N2O) to generate silicon dioxide.

[0039] Specifically, the spray head 30 can be disposed between the support platform 110 and the precursor gas supply device 20. The spray head 30 is a key component for uniformly delivering the precursor gas to the reaction chamber 10. For example, the spray head 30 can be uniformly distributed on the wafer surface through a porous structure or microchannels.

[0040] Specifically, the annular shielding structure 40 is circular in shape and is located between the spray head 30 and the support platform 110. The annular shielding structure 40 is used to shield the edge of the upper surface of the wafer. The radius of the annular shielding structure 40 is larger than the radius of the wafer.

[0041] Specifically, the inert gas supply device 50 can be disposed on the outer edge of the support stage 110, and the inert gas supply device 50 is used to blow inert gas into the back edge of the wafer. The backside gas enhances the thermal conductivity of the wafer edge, thereby making the temperature of the wafer surface uniform. The temperature difference across the entire wafer can be controlled within ±5℃. Improving the temperature uniformity of the wafer can directly improve the uniformity of thin film deposition, and reduce the difference in film thickness between the edge and the center. In addition, the annular shielding structure 40 provided at the wafer edge prevents gas from blowing towards the front side of the wafer.

[0042] Specifically, vacuum pump 60 maintains the vacuum level of reaction chamber 10 and removes residual gas.

[0043] Please see Figure 2 and Figure 3 In one embodiment of this invention, a vent 120 is provided on the side wall of the reaction chamber 10, and an inert gas supply device 50 blows inert gas into the back edge of the wafer near the vent 120. A vacuum pump is located outside the vent 120.

[0044] Specifically, by placing the vacuum pump outside the outlet 120, the vacuum pump accelerates the gas flow at the edge of the back side of the wafer while removing residual gas, thereby enhancing the thermal conductivity of the wafer edge.

[0045] Please see Figure 2 and Figure 3 In one embodiment of this invention, the number of vent holes 120 is at least two, and the inert gas supply device 50 blows inert gas into the back edge of the wafer near each vent hole 120. At least two vent holes 120 are symmetrically arranged on the side wall of the reaction chamber 10.

[0046] Specifically, by setting the vent 120 to be centrally symmetrical or axially symmetrical, the inert gas supply device 50 can symmetrically inject inert gas at the edge of the back side of the wafer, thereby making the gas at the edge of the back side of the wafer flow uniformly, thus maximizing the temperature uniformity of the wafer surface, improving the temperature uniformity of the wafer, and improving the uniformity of wafer thin film deposition.

[0047] Please see Figure 2 and Figure 3In one embodiment of this invention, the annular shielding structure 40 is located inside the reaction chamber 10 near the top of the vent 120. After the support stage 110 supports the wafer, an outlet flow channel is formed by the back edge of the wafer, the inside of the reaction chamber 10 near the bottom of the vent 120, the annular shielding structure 40, and the vent 120. The flow direction of the outlet flow channel is: from the back edge of the wafer, the inside of the reaction chamber 10 near the bottom of the vent 120, towards the annular shielding structure 40 and the vent 120.

[0048] Specifically, such as Figure 2 Point A and Figure 3 As shown, an exhaust channel is formed from the back edge of the wafer, the bottom inner side of the exhaust port 110 to the annular shielding structure 40 and the exhaust port 120. A vacuum pump (not shown in the figure) is set outside the exhaust port 110. The vacuum pump removes the gas at the back edge of the wafer through the exhaust channel, which can quickly realize the gas flow at the back edge of the wafer, thereby improving the temperature uniformity of the wafer.

[0049] Please see Figure 4 In one embodiment of this utility model, the annular blocking structure 40 includes a protrusion 410 and a body 420. The body 420 is disc-shaped, and the protrusion 410 is annular. Figure 4 The diagram shows only a radial cross-sectional view of the annular shielding structure 40, and a longitudinal cross-sectional view of a certain point on the annular shielding structure 40. The body 420 extends along the edge of the upper surface of the wafer toward the inner wall of the reaction chamber 10, and the protrusion 410 extends along the edge of the upper surface of the wafer toward the top of the reaction chamber 10.

[0050] Specifically, the protrusion 420 prevents gas from blowing towards the front side of the wafer in the vertical direction. The body 410 guides the gas flow in the horizontal direction, preventing gas from blowing towards the front side of the wafer.

[0051] Specifically, such as Figure 2 , Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the body 420 of the annular shielding structure 40 extends along the edge of the upper surface of the wafer toward the top inner side of the vent 120, and the protrusion 410 extends along the edge of the upper surface of the wafer toward the top of the reaction chamber 10.

[0052] Please see Figure 2 and Figure 5 In one embodiment of the present invention, the spray head 30 has multiple gas channels 310 and includes multiple heating lamps 330. The heating lamps 330 are embedded in the spray head 30 and intersect with the gas channels 310.

[0053] Specifically, the heating lamp 330 serves to regulate the local temperature, and the heating lamp 330 is embedded in the spray head 30. Multiple heating lamps 330 can be connected in series or parallel with hardwired wires, which are wrapped around the inside of the spray head 30. The control board for multiple heating lamps 330 can be located outside the reaction chamber 10.

[0054] Specifically, the design and maintenance of the gas channels 310 are crucial because they directly impact process performance and results. For example, a well-designed gas channel ensures uniform gas distribution across the wafer surface. Furthermore, in some processes, rapid switching between different gas types may be required; an effective gas channel design 310 can help achieve this, reducing process changeover time and improving production efficiency. Therefore, the heating beads 330 can be interleaved with the gas channels 310, ensuring that the heating beads 330 do not alter the gas flow within the reaction chamber 10.

[0055] Please see Figure 2 and Figure 5 In one embodiment of this utility model, there are multiple heating lamp beads 330, and the multiple heating lamp beads 330 form multiple concentric annular shapes with different radii on the spray head 30.

[0056] Specifically, by adding multiple heating lamps 330 to the gas channel 310 area, the temperature of the gas channel 310 can be locally adjusted, thereby achieving temperature uniformity of the wafer.

[0057] Specifically, the vacuum pump removes gas from the edge of the back side of the wafer through the outlet gas channel, which can quickly realize the gas flow at the edge of the back side of the wafer and thus improve the temperature uniformity of the wafer. Furthermore, the heating lamps 330 embedded in the spray head 30 can further improve the temperature uniformity of the wafer and improve the uniformity of wafer thin film deposition.

[0058] Please see Figure 2 and Figure 6 In one embodiment of this utility model, the spray head 30 has multiple gas channels 310, and a regulating valve 320 is provided in each gas channel 310. The opening angle of the regulating valve 320 is 0° to 90°.

[0059] Specifically, by installing a regulating valve 320 within the gas channel 310, the opening degree of the gas channel 310 can be changed. Precise control of the local flow rate of the precursor can be achieved when the gas channel 310 is at different opening degrees. The opening angle of the regulating valve 320 can be adjusted after disassembly, specifically manually according to the process requirements of thin film deposition. The opening angle of the regulating valve 320 can be 0°, 45°, or 90°, and can be manually calibrated.

[0060] Specifically, in addition to the vacuum pump removing gas from the edge of the back side of the wafer through the outlet gas channel to improve the temperature uniformity of the wafer, the temperature uniformity of the wafer can be further improved by embedding heating lamps 330 in the spray head 30. Furthermore, the uniformity of wafer thin film deposition can be improved by setting a regulating valve 320 in the gas channel 310 to allow the gas channel 310 to be in different opening states.

[0061] Please see Figure 7 and Figure 8 , Figure 7 This is an electron scanning schematic diagram of a semiconductor thin film deposited and then subjected to chemical mechanical polishing in the prior art. From Figure 7 As can be seen, the uniformity of the thin film deposited on the wafer is poor. After chemical mechanical polishing, the edge areas still retain silicon dioxide film, such as... Figure 7 The ellipse in the middle. Figure 8 This is an electron scanning schematic diagram of a semiconductor thin film deposited and then subjected to chemical mechanical polishing, as provided in an embodiment of this application. Figure 8 As can be seen from this, the wafer thin film deposition layer has good uniformity, and after chemical mechanical polishing, there is no residual silicon dioxide film.

[0062] In summary, the semiconductor thin film deposition equipment disclosed in this utility model has the unexpected technical effect of improving the uniformity of temperature distribution on the wafer surface by increasing the thermal conductivity of the wafer edge contact during the thin film deposition process. This improves the uniformity of the film layer after deposition, thereby ensuring the control precision of chemical mechanical polishing. Therefore, this utility model effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0063] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A semiconductor thin film deposition apparatus, characterized in that, include: The reaction chamber contains a support platform for supporting the wafer. A precursor gas supply device is located at the top of the reaction chamber; A spray head is disposed between the support platform and the precursor air supply device; An annular shielding structure is located between the spray head and the support platform to shield the edge of the upper surface of the wafer; An inert gas supply device is located on the outer edge of the support platform to blow inert gas into the back edge of the wafer. A vacuum pump is used to extract the gas from the reaction chamber.

2. The semiconductor thin film deposition apparatus according to claim 1, characterized in that, The reaction chamber has an outlet hole on its side wall, and the inert gas supply device blows inert gas into the back edge of the wafer near the outlet hole; the vacuum pump is located outside the outlet hole.

3. The semiconductor thin film deposition apparatus according to claim 2, characterized in that, The annular shielding structure is located inside the reaction chamber near the top of the vent. After the support platform supports the wafer, an outflow channel is formed by the back edge of the wafer, the inner side of the reaction chamber near the bottom of the vent hole, the annular shielding structure, and the vent hole.

4. The semiconductor thin film deposition apparatus according to claim 2, characterized in that, The number of vent holes is at least two, and the inert gas supply device blows inert gas into the back edge of the wafer near each vent hole.

5. The semiconductor thin film deposition apparatus according to claim 4, characterized in that, At least two of the vent holes are symmetrically arranged on the side wall of the reaction chamber.

6. The semiconductor thin film deposition apparatus according to claim 1, characterized in that, The annular shielding structure includes a body and a protrusion, the body being in the shape of a disc and the protrusion being in the shape of an annulus; The body extends along the edge of the upper surface of the wafer toward the inner wall of the reaction chamber, and the protrusion extends along the edge of the upper surface of the wafer toward the top of the reaction chamber.

7. The semiconductor thin film deposition apparatus according to claim 1, characterized in that, The spray head has multiple gas channels and includes multiple heating lamps embedded in it, with the heating lamps intersecting the gas channels.

8. The semiconductor thin film deposition apparatus according to claim 7, characterized in that, Multiple heating lamps are arranged in multiple concentric ring shapes with different radii on the spray head.

9. The semiconductor thin film deposition apparatus according to claim 1, characterized in that, The spray head has multiple gas channels, and each gas channel is equipped with a regulating valve.

10. The semiconductor thin film deposition apparatus according to claim 9, characterized in that, The opening angle of the regulating valve is 0° to 90°.

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