Gas uniform distribution type diffusion furnace structure

Abstract

The utility model relates to hearth structure field, concretely is even distribution formula diffusion hearth structure of gas, including the shell body, the shell body upper end fixed mounting has the gas pipe, the shell body is inside and is seted up the air inlet chamber, still include: be located in the inner shell body inside the inner shell, the diffusion chamber is seted up in the shell, is seted up a plurality of bearing grooves on the both sides cavity wall of diffusion chamber, bearing groove is movable and is installed with the silicon wafer placing spare, every silicon wafer placing spare's upper and lower both sides all are installed with the gas collecting spare, the utility model discloses oxygen enters the air inlet chamber and will enter into the gas collecting chamber from every air inlet pipe, then escapes from the air outlet hole, since the air outlet hole covers the whole air hole, so oxygen will evenly spread to the silicon wafer surface, and since every silicon wafer upper and lower both sides are provided with the air outlet hole, therefore oxygen can evenly spread to the silicon wafer surface from upper and lower both sides, guarantee the uniformity of oxygen adhesion on the silicon wafer surface.

Description

Technical Field

[0001] This utility model relates to the field of furnace structure, and in particular to a gas uniform distribution diffusion furnace structure. Background Technology

[0002] A diffusion furnace is a key piece of equipment used in high-temperature processing in semiconductor manufacturing, materials science, and other high-tech fields. It is primarily used to perform processes such as doping, thermal oxidation, and annealing on material surfaces. Thermal oxidation requires the introduction of oxygen; silicon atoms react with oxygen at high temperatures to form a silicon dioxide layer on the silicon wafer surface.

[0003] Existing diffusion furnaces typically introduce oxygen directly into the furnace through ventilation pipes. This method suffers from uneven gas distribution, which directly leads to uneven silicon dioxide layer formation on the silicon wafer surface, affecting product quality. Therefore, a diffusion furnace structure with uniform gas distribution is provided. Utility Model Content

[0004] The main objective of this invention is to provide a gas uniform distribution diffusion furnace structure to solve the problems raised in related technologies.

[0005] To achieve the above objectives, according to one aspect of the present invention, a gas uniform distribution diffusion furnace structure is provided, including an outer shell, a gas supply pipe fixedly installed at the upper end of the outer shell, and an inlet chamber formed within the outer shell, further comprising:

[0006] An inner shell is located inside the outer shell, and a diffusion cavity is formed inside the inner shell. Multiple bearing grooves are formed on the two side walls of the diffusion cavity.

[0007] A silicon wafer placement component is movably installed within the support groove;

[0008] Each of the aforementioned silicon wafer placement components has gas collection components installed on both its upper and lower sides.

[0009] Furthermore, one end of the air supply pipe extends through the outer casing into the air intake chamber.

[0010] Furthermore, the silicon wafer placement component includes a silicon wafer placement plate, the surface of which is provided with a plurality of vent holes, and each vent hole is surrounded by a placement groove for placing silicon wafers.

[0011] Furthermore, the gas collecting component includes a gas collecting plate, each gas collecting plate having a gas collecting cavity inside, and multiple air inlet pipes arranged side by side fixedly installed on both sides of each gas collecting plate, with the end of the air inlet pipe away from the gas collecting plate passing through the inner shell and extending into the air inlet cavity.

[0012] Furthermore, each of the gas collecting plates has multiple air outlets arranged in an array on the surface facing the silicon wafer placement plate. The air outlets are connected to the gas collecting cavity, and the array of air outlets covers the entire ventilation area.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] This invention introduces oxygen into the air intake chamber through a gas supply pipe and a secondary gas supply pipe. After entering the air intake chamber, the oxygen enters the gas collection chamber through each air intake pipe and then escapes through the gas outlet. Since the gas outlet is distributed in a matrix and covers the entire vent, the oxygen will diffuse evenly to the surface of the silicon wafer. Furthermore, since each silicon wafer has gas outlets on both the top and bottom sides, the oxygen can diffuse evenly to the surface of the silicon wafer from both sides, ensuring the uniformity of oxygen adhesion on the silicon wafer surface and ensuring the uniformity of the silicon dioxide layer formed on the silicon wafer surface. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the overall structure of the diffusion furnace in a preferred embodiment of the present invention;

[0016] Figure 2 This is a cross-sectional view of the diffusion furnace in a preferred embodiment of the present invention;

[0017] Figure 3 This is a schematic cross-sectional view of the outer shell in a preferred embodiment of the present invention;

[0018] Figure 4 This is a schematic cross-sectional view of the inner shell in a preferred embodiment of the present invention.

[0019] Figure label:

[0020] 1. Outer casing; 11. Air intake chamber; 12. Air supply pipe; 13. Support groove;

[0021] 2. Inner shell; 21. Diffusion cavity;

[0022] 3. Silicon wafer placement component; 31. Silicon wafer placement plate; 32. Vent hole; 33. Placement tank;

[0023] 4. Air collection component; 41. Air collection plate; 42. Air collection chamber; 43. Air inlet pipe; 44. Air outlet. Detailed Implementation

[0024] To further illustrate the technical means and effects adopted by this utility model in order to achieve the intended utility model purpose, the following detailed description of the specific implementation methods, structure, features and effects of this utility model is provided in conjunction with the accompanying drawings and preferred embodiments.

[0025] like Figures 1 to 4As shown, this embodiment provides a gas uniform distribution diffusion furnace structure, including an outer shell 1, an air inlet chamber 11 is provided inside the outer shell 1, and an inner shell 2 is provided inside the outer shell 1, a diffusion chamber 21 is provided inside the inner shell 2, and multiple bearing grooves 13 are provided on the two side walls of the diffusion chamber 21.

[0026] An air supply pipe 12 is fixedly installed on the upper end of the outer shell 1, with one end of the air supply pipe 12 penetrating the outer shell 1 and extending into the air intake chamber 11.

[0027] A silicon wafer placement component 3 is movably installed within the support groove 13;

[0028] Each silicon wafer placement component 3 has gas collection components 4 installed on both its upper and lower sides;

[0029] The silicon wafer placement component 3 includes a silicon wafer placement plate 31. The surface of the silicon wafer placement plate 31 is provided with a plurality of ventilation holes 32. Each ventilation hole 32 is surrounded by a placement groove 33, which is used to place silicon wafers.

[0030] The gas collecting component 4 includes a gas collecting plate 41. Each gas collecting plate 41 has a gas collecting cavity 42 inside. Multiple air inlet pipes 43 are fixedly installed on both sides of each gas collecting plate 41. The end of the air inlet pipe 43 away from the gas collecting plate 41 passes through the inner shell 2 and extends into the air inlet cavity 11. Multiple air outlet holes 44 are opened on the surface of each gas collecting plate 41 facing the silicon wafer placement plate 31. The air outlet holes 44 are connected to the gas collecting cavity 42, and the arrayed air outlet holes 44 cover the entire area of ​​the ventilation hole 32.

[0031] The bottom surface of the outer casing 1 is provided with an air vent to ensure safe internal air pressure.

[0032] Oxygen is introduced into the air inlet chamber 11 through the air supply pipe 12. After entering the air inlet chamber 11, the oxygen enters the gas collection chamber 42 through each air inlet pipe 43 and then escapes through the air outlet 44. Since the air outlet 44 is distributed in a matrix and covers the entire vent 32, the oxygen will diffuse evenly to the surface of the silicon wafer. Furthermore, since each silicon wafer has air outlets 44 on both the top and bottom sides, the oxygen can diffuse evenly to the surface of the silicon wafer from both sides, ensuring the uniformity of oxygen adhesion on the surface of the silicon wafer and ensuring the uniformity of the silicon dioxide layer formed on the surface of the silicon wafer.

[0033] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Although the present utility model has been disclosed above with reference to a preferred embodiment, it is not intended to limit the present utility model. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present utility model. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model without departing from the scope of the present utility model shall still fall within the scope of the present utility model.

Claims

1. A gas uniform distribution type diffusion furnace structure, comprising an outer shell (1), a gas conveying pipe (12) is fixedly installed on the upper end of the outer shell (1), and a gas inlet cavity (11) is formed in the outer shell (1), characterized in that, Also includes: An inner shell (2) is provided inside the outer shell (1), and a diffusion cavity (21) is provided inside the inner shell (2). Multiple bearing grooves (13) are provided on the two side walls of the diffusion cavity (21). A silicon wafer placement component (3) is movably installed in the support groove (13); Each of the silicon wafer placement components (3) has gas collection components (4) installed on its upper and lower sides.

2. The gas uniform distribution type diffusion hearth structure according to claim 1, characterized by, One end of the gas supply pipe (12) passes through the outer shell (1) and extends into the air intake chamber (11).

3. The gas uniform distribution type diffusion hearth structure according to claim 2, characterized by, The silicon wafer placement component (3) includes a silicon wafer placement plate (31). The surface of the silicon wafer placement plate (31) is provided with a plurality of ventilation holes (32). Each ventilation hole (32) is surrounded by a placement groove (33), which is used to place the silicon wafer.

4. The gas uniform distribution type diffusion hearth structure according to claim 3, characterized by, The gas collecting component (4) includes a gas collecting plate (41), each gas collecting plate (41) has a gas collecting chamber (42) inside, and multiple air inlet pipes (43) arranged side by side are fixedly installed on both sides of each gas collecting plate (41). The end of the air inlet pipe (43) away from the gas collecting plate (41) passes through the inner shell (2) and extends into the air inlet chamber (11).

5. The gas uniform distribution diffusion furnace structure according to claim 4, characterized in that, Each of the gas collecting plates (41) has multiple air outlets (44) arranged in an array on the surface facing the silicon wafer placement plate (31). The air outlets (44) are connected to the gas collecting cavity (42), and the arrayed air outlets (44) cover the entire area of ​​the vent (32).

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