A protection system for high speed bursts
By constructing a 0-1GHz broadband filtering and energy dissipation path and utilizing a multi-layer filtering and energy dissipation layer to achieve nanosecond-level path isolation, the problem of high-frequency pulse interference lag in existing technologies is solved, and effective protection against electrical fast transient pulse groups is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WUHU SHANYE IOT TECH CO LTD
- Filing Date
- 2025-08-11
- Publication Date
- 2026-06-19
AI Technical Summary
Existing protection systems are slow to absorb high-frequency pulse interference and cannot effectively protect electronic equipment from damage caused by electrical fast transient pulse groups.
A 0-1GHz broadband filtering and energy discharge path is adopted, consisting of a first-stage venting layer, a second-stage barrier layer, a third-stage residual pressure absorption layer, and a fourth-stage isolation and high-frequency barrier layer. These layers are used to discharge high energy, weaken energy, absorb high-frequency components, and convert high-frequency energy into heat energy, respectively, to achieve nanosecond-level path isolation.
It achieves nanosecond-level response to electrical fast transient pulse groups, effectively protecting electronic equipment from damage, with a response time of less than 5ns.
Smart Images
Figure CN224385481U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electromagnetic interference protection technology, specifically to a high-speed pulse group protection system. Background Technology
[0002] Electrical fast transient / burst (EFT / Burst) is a common and severe form of electromagnetic interference, characterized by high-amplitude (up to several kilovolts), short rise times (in the nanosecond range), and high repetition frequencies (typically 2.5 kHz, 5 kHz, or higher). This interference mainly arises from switching operations and relay contact bounce, coupling into electronic equipment through power lines, signal lines, or ground lines. It can easily cause malfunctions, data errors, or even hardware damage to microprocessors, digital circuits, or analog circuits within the equipment.
[0003] Currently, existing protection systems have the following problems:
[0004] Existing protection methods include magnetic ring filtering, switch isolation, and magnetic isolation measures. However, the drawback of these measures is that the magnetic flux of the magnetic ring is fixed and can only absorb interference in a fixed frequency band, with a significant lag in the absorption of high-frequency pulses.
[0005] Therefore, the problem that this utility model urgently needs to solve is to provide a high-speed pulse group protection system that, during use, consists of a 0-1GHz broadband filtering and energy dissipation path composed of a first-level venting and dissipation layer, a second-level blocking layer, a third-level residual pressure absorption layer, and a fourth-level isolation and high-frequency blocking layer, so that its response time is less than 5ns and it achieves the function of nanosecond-level path isolation. Utility Model Content
[0006] To address the aforementioned technical problems, the purpose of this invention is to overcome the limitations of existing technologies, which can only absorb interference in fixed frequency bands and exhibit significant lag in absorbing high-frequency pulses. This invention provides a high-speed pulse group protection system that utilizes a 0-1GHz broadband filtering and energy dissipation path comprised of a first-stage venting layer, a second-stage blocking layer, a third-stage residual voltage absorption layer, and a fourth-stage isolation and high-frequency blocking layer. This results in a response time of less than 5ns and achieves nanosecond-level path isolation.
[0007] To achieve the above objectives, this utility model provides a high-speed pulse group protection system. The system comprises a 0-1 GHz broadband filtering and energy dissipation path consisting of a first-stage diversion and discharge layer, a second-stage blocking layer, a third-stage residual voltage absorption layer, and a fourth-stage isolation and high-frequency blocking layer, all electrically connected in sequence.
[0008] The first-stage venting layer is connected between the power input terminal and the reference ground to vent the high energy in the EFT pulse group and withstand the initial high voltage impact.
[0009] The second-level barrier layer serves to partially and weakly impede energy, thereby further weakening the energy.
[0010] The third-stage residual voltage absorption layer is connected to the signal / power line and is used to absorb and attenuate high-frequency components in the EFT pulse group and filter out high-frequency noise to provide a low-impedance transient current loop.
[0011] The fourth level of isolation and high-frequency blocking layer is used to convert high-frequency energy into heat energy and dissipate it, thereby suppressing high-frequency oscillations and radiated noise.
[0012] Preferably, the first-stage evacuation and discharge layer includes: a first-stage evacuation and discharge protection circuit and a gas discharge tube; wherein,
[0013] The first-stage evacuation and discharge protection circuit is connected to the power input terminal, and the gas discharge tube is connected between the L-terminal, N-terminal and reference ground of the power input line of the first-stage evacuation and discharge protection circuit.
[0014] Preferably, the second-stage barrier layer includes: a second-stage barrier and turn-off protection circuit, a transient voltage suppression diode, and a common-mode inductor; wherein,
[0015] The second-stage barrier and shutdown protection circuit is connected after the first-stage discharge protection circuit. The transient voltage suppression diode is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit. The common-mode inductor is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit.
[0016] Preferably, the third-stage residual voltage absorption layer comprises: a third-stage residual voltage absorption circuit, a first ferrite bead, and a ceramic capacitor; wherein,
[0017] The third-stage residual voltage absorption circuit is connected after the second-stage blocking and shutdown protection circuit. At least two first-stage ferrite beads are provided, and the two first-stage ferrite beads are connected in series to the signal / power line of the third-stage residual voltage absorption circuit. At least two ceramic capacitors are provided, and the two ceramic capacitors are respectively connected between the input power signal L and N lines and the reference ground of the third-stage residual voltage absorption circuit.
[0018] Preferably, the fourth-level isolation and high-frequency blocking layer comprises: a fourth-level isolation and high-frequency blocking circuit and a second ferrite bead; wherein,
[0019] The fourth isolation and high-frequency blocking circuit is connected after the third residual voltage absorption circuit. At least two second ferrite beads are provided, and the two ferrite beads are connected in series in the fourth isolation and high-frequency blocking circuit.
[0020] Preferably, the frequency range of the second ferrite bead is 10MHz-100MHz.
[0021] According to the above technical solution, the beneficial effects of the high-speed pulse group protection system provided by this utility model in use are as follows:
[0022] This invention utilizes a first-stage venting layer to overcome energy limitations and absorb 90% of pulse energy, covering the entire EFT frequency band for energy venting; a second-stage blocking layer to achieve nanosecond-level shutdown; a third-stage residual voltage absorption layer to quickly absorb residual voltage; and a fourth-stage isolation and high-frequency blocking layer to achieve normal voltage output.
[0023] In summary, this invention achieves a 0-1GHz broadband filtering and energy dissipation path composed of a first-stage venting layer, a second-stage blocking layer, a third-stage residual pressure absorption layer, and a fourth-stage isolation and high-frequency blocking layer, resulting in a response time of less than 5ns and realizing nanosecond-level path isolation.
[0024] Other features and advantages of this utility model will be described in detail in the following detailed description section; and all parts not covered in this utility model are the same as or can be implemented using existing technology. Attached Figure Description
[0025] The accompanying drawings are provided to further illustrate the present invention and form part of the specification. They are used together with the following detailed description to explain the present invention, but do not constitute a limitation thereof. In the drawings:
[0026] Figure 1 This is a schematic diagram of a high-speed pulse group protection system provided in a preferred embodiment of the present invention;
[0027] Figure 2 This is a circuit diagram of a high-speed pulse group protection system provided in a preferred embodiment of the present invention;
[0028] Figure 3 This is a circuit diagram of the first-stage venting and discharge protection circuit of a high-speed pulse group protection system provided in a preferred embodiment of this utility model.
[0029] Figure 4 This is a circuit diagram of the second-stage blocking and shutdown protection circuit of a high-speed pulse group protection system provided in a preferred embodiment of the present invention.
[0030] Figure 5 This is a circuit diagram of the third-stage residual voltage absorption circuit of the high-speed pulse group protection system provided in a preferred embodiment of this utility model.
[0031] Figure 6 This is a circuit diagram of the fourth isolation and high-frequency blocking circuit of a high-speed pulse group protection system provided in a preferred embodiment of the present invention.
[0032] Explanation of reference numerals in the attached figures
[0033] 1. First-stage discharge layer; 101. First-stage discharge protection circuit; 102. Gas discharge tube; 2. Second-stage barrier layer; 201. Second-stage barrier and shutdown protection circuit; 202. Transient voltage suppression diode; 203. Common-mode inductor; 3. Third-stage residual voltage absorption layer; 301. Third-stage residual voltage absorption circuit; 302. First ferrite bead; 303. Ceramic capacitor; 4. Fourth-stage isolation and high-frequency barrier layer; 401. Fourth isolation and high-frequency barrier circuit; 402. Second ferrite bead. Detailed Implementation
[0034] The specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the scope of this utility model.
[0035] like Figure 1-6 As shown, this utility model provides a high-speed pulse group protection system. The system comprises a 0-1GHz broadband filtering and energy dissipation path consisting of a first-stage venting and discharge layer 1, a second-stage blocking layer 2, a third-stage residual voltage absorption layer 3, and a fourth-stage isolation and high-frequency blocking layer 4, all electrically connected in sequence.
[0036] The first-stage venting and discharge layer 1 is connected between the power input terminal and the reference ground to discharge the high energy in the EFT pulse group and withstand the initial high voltage impact.
[0037] The second-level barrier layer 2 is used to partially and slightly hinder energy, thereby further weakening the energy.
[0038] The third-stage residual voltage absorption layer 3 is connected to the signal line / power line and is used to absorb and attenuate the high-frequency components in the EFT pulse group and filter out high-frequency noise to provide a low-impedance transient current loop.
[0039] The fourth level of isolation and high-frequency blocking layer 4 is used to convert high-frequency energy into heat energy and dissipate it, thereby suppressing high-frequency oscillations and radiated noise.
[0040] In the above scheme, the first-stage venting layer 1 can overcome energy limitations and absorb 90% of the pulse energy, covering the entire EFT frequency band for energy discharge; the second-stage blocking layer 2 achieves nanosecond-level turn-off; the third-stage residual voltage absorption layer 3 can quickly absorb residual voltage; and the fourth-stage isolation and high-frequency blocking layer 4 can achieve normal voltage output. Therefore, this system can both mitigate the disadvantages of strong current flow and slow response time in the front-stage (blocking increases the current flow time) and avoid the problems of weak response capability and short response time in the subsequent stages (isolation further reduces the energy of the subsequent stages).
[0041] The above-mentioned methods of channeling → blocking → absorbing → isolating are used to overcome the following problems existing in the prior art:
[0042] (1) Traditional common-mode inductor + X / Y capacitor filtering (such as common-mode inductor NF, 15–30mH) only suppresses low-frequency interference below 100MHz and is insufficient for attenuating GHz-level EFT (<20dB).
[0043] (2) The response time of the voltage comparator + MOSFET isolation scheme used in the existing technology cannot intercept the 5ns leading edge pulse, and the single-point protection will thermally collapse under repeated pulses (such as the impedance of the varistor MOV drops sharply after a 4kV impact).
[0044] In summary, this utility model achieves nanosecond-level path isolation by constructing a 0-1GHz broadband filtering and energy dissipation path consisting of a first-stage dredging and dissipation layer 1, a second-stage barrier layer 2, a third-stage residual pressure absorption layer 3, and a fourth-stage isolation and high-frequency barrier layer 4, resulting in a response time of less than 5ns.
[0045] In a preferred embodiment of this utility model, the first-stage venting and discharge layer 1 includes: a first-stage venting and discharge protection circuit 101 and a gas discharge tube 102; wherein,
[0046] The first-stage evacuation and discharge protection circuit 101 is connected to the power input terminal, and the gas discharge tube 102 is connected between the L-terminal, N-terminal and reference ground of the power input line of the first-stage evacuation and discharge protection circuit 101.
[0047] In the above scheme, the gas discharge tube 102 is used to discharge most of the high energy in the EFT pulse group and withstand the initial high voltage impact (its breakdown voltage is selected according to the working voltage and protection level requirements of the protected circuit). In addition, the second-stage barrier layer 2 at the rear end can slow down the passage of the pulse group, allowing the front end to have more time to discharge some of the energy.
[0048] In a preferred embodiment of this invention, the second-level barrier layer 2 includes: a second-level barrier and turn-off protection circuit 201, a transient voltage suppression diode 202, and a common-mode inductor 203; wherein,
[0049] The second-stage barrier and shutdown protection circuit 201 is connected after the first-stage effluent discharge protection circuit 101. The transient voltage suppression diode 202 is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit 201. The common-mode inductor 203 is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit 201.
[0050] In the above scheme, the common mode inductor 203 plays a slightly weaker role in hindering energy, which further weakens the energy. In addition, the third-stage residual voltage absorption layer 3 can effectively absorb the energy, thus forming an energy vacuum region.
[0051] In a preferred embodiment of this utility model, the third-stage residual voltage absorption layer 3 includes: a third-stage residual voltage absorption circuit 301, a first ferrite bead 302, and a ceramic capacitor 303; wherein,
[0052] The third-stage residual voltage absorption circuit 301 is connected after the second-stage blocking and shutdown protection circuit 201. At least two first-stage ferrite beads 302 are provided, and the two first-stage ferrite beads 302 are connected in series to the signal / power line of the third-stage residual voltage absorption circuit 301. At least two ceramic capacitors 303 are provided, and the two ceramic capacitors 303 are respectively connected between the input power signal L and N lines and the reference ground of the third-stage residual voltage absorption circuit 301.
[0053] In the above scheme, the first ferrite bead 302 can be used to absorb and attenuate high-frequency components in the EFT pulse group, especially the high-frequency oscillations and noise remaining after the transient voltage suppression diode 202 clamps. Its impedance characteristics should be selected to have high impedance in the main frequency band of EFT interference (such as several MHz to hundreds of MHz). The ceramic capacitor 303 can further filter out high-frequency noise and provide a low-impedance transient current loop.
[0054] In a preferred embodiment of this utility model, the fourth-level isolation and high-frequency blocking layer 4 includes: a fourth isolation and high-frequency blocking circuit 401 and a second ferrite bead 402; wherein,
[0055] The fourth isolation and high-frequency blocking circuit 401 is connected after the third residual voltage absorption circuit 301. At least two second ferrite beads 402 are provided, and the two ferrite beads 402 are connected in series in the fourth isolation and high-frequency blocking circuit 401.
[0056] In the above scheme, the high-frequency loss characteristics of the No. 2 ferrite bead 402 are utilized to convert this high-frequency energy into heat energy and dissipate it, effectively suppressing high-frequency oscillation and radiation noise.
[0057] In a preferred embodiment of this utility model, the frequency range of the second ferrite bead 402 is 10MHz-100MHz.
[0058] In the above scheme, a No. 2 ferrite bead 402 with a frequency range of 10MHz-100MHz is selected, giving it high impedance characteristics (e.g., an impedance value above 100Ω, while the pulse energy still contains a large number of high-frequency components). Utilizing its high-frequency loss characteristics, this high-frequency energy is converted into heat energy and dissipated, effectively suppressing high-frequency oscillations and radiated noise.
[0059] In summary, the high-speed pulse group protection system provided by this utility model overcomes the problem that the existing technology can only absorb interference in a fixed frequency band and has a significant lag in absorbing high-frequency pulses.
[0060] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.
[0061] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable way without contradiction. In order to avoid unnecessary repetition, this utility model will not describe the various possible combinations separately.
[0062] Furthermore, various different embodiments of this utility model can be combined in any way, as long as they do not violate the spirit of this utility model, they should also be regarded as the content disclosed by this utility model.
Claims
1. A protection system for high speed bursts, characterized in that, The system is a 0-1GHz broadband filtering and energy dissipation path consisting of a first-stage venting and discharge layer (1), a second-stage blocking layer (2), a third-stage residual pressure absorption layer (3), and a fourth-stage isolation and high-frequency blocking layer (4), which are electrically connected in sequence; wherein, The first-stage venting layer (1) is connected between the power input terminal and the reference ground to vent the high energy in the EFT pulse group and withstand the initial high voltage impact. The second-level barrier layer (2) is used to partially and slightly hinder energy, thereby further weakening the energy; The third-stage residual voltage absorption layer (3) is connected to the signal line / power line to absorb and attenuate the high-frequency components in the EFT pulse group and filter out high-frequency noise to provide a low-impedance transient current loop. The fourth level of isolation and high frequency blocking layer (4) is used to convert high frequency energy into heat energy and dissipate it, so as to suppress high frequency oscillation and radiated noise.
2. The high-speed pulse group protection system according to claim 1, characterized in that, The first-stage evacuation and discharge layer (1) includes: a first-stage evacuation and discharge protection circuit (101) and a gas discharge tube (102); wherein, The first-stage evacuation and discharge protection circuit (101) is connected to the power input terminal, and the gas discharge tube (102) is connected between the L-level, N-level and reference ground of the power input line of the first-stage evacuation and discharge protection circuit (101).
3. The high-speed pulse group protection system according to claim 2, characterized in that, The second-level barrier layer (2) includes: a second-level barrier and turn-off protection circuit (201), a transient voltage suppression diode (202), and a common-mode inductor (203); wherein, The second-stage barrier and shutdown protection circuit (201) is connected after the first-stage shunting and discharge protection circuit (101). The transient voltage suppression diode (202) is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit (201). The common-mode inductor (203) is connected between the L and N stages of the power input line of the second-stage barrier and shutdown protection circuit (201).
4. The high-speed pulse group protection system according to claim 3, characterized in that, The third-stage residual voltage absorption layer (3) includes: a third-stage residual voltage absorption circuit (301), a first ferrite bead (302), and a ceramic capacitor (303); wherein, The third-stage residual voltage absorption circuit (301) is connected after the second-stage blocking and shutdown protection circuit (201). At least two first-stage ferrite beads (302) are provided, and the two first-stage ferrite beads (302) are connected in series to the signal line / power line of the third-stage residual voltage absorption circuit (301). At least two ceramic capacitors (303) are provided, and the two ceramic capacitors (303) are respectively connected between the input power signal L and N lines and the reference ground of the third-stage residual voltage absorption circuit (301).
5. The high-speed pulse group protection system according to claim 4, characterized in that, The fourth-level isolation and high-frequency blocking layer (4) includes: a fourth isolation and high-frequency blocking circuit (401) and a second ferrite bead (402); wherein, The fourth isolation and high-frequency blocking circuit (401) is connected after the third residual voltage absorption circuit (301). At least two second ferrite beads (402) are provided, and the two ferrite beads (402) are connected in series in the fourth isolation and high-frequency blocking circuit (401).
6. The high-speed pulse group protection system according to claim 5, characterized in that, The frequency range of the second ferrite bead (402) is 10MHz-100MHz.