Fracturing apparatus

Abstract

This disclosure provides a dicing apparatus, relating to the field of semiconductor technology, for reducing the cost of dicing devices. The dicing apparatus includes: an optical microscope, a support base, a displacement control assembly, and a dicing blade. The optical microscope has a stage; the support base has a carrier stage, which is movable relative to the stage in a lifting direction perpendicular to the carrier surface of the stage; the displacement control assembly is disposed on the carrier stage; and its mounting end is movable relative to the stage in a direction parallel to the carrier surface; the dicing blade is disposed on the mounting end of the displacement control assembly. The above-described dicing apparatus is applied to the dicing of semiconductor structures.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a dicing apparatus. Background Technology

[0002] In the structural characterization stage of chip manufacturing processes, cross-sectional analysis is a commonly used and important method. Common techniques for preparing wafer chip cross-sections include laser cutting and focused plasma beam (FIB) cutting, but both methods are too expensive. Utility Model Content

[0003] The purpose of embodiments of this disclosure is to provide a dicing apparatus for reducing the cost of dicing apparatuses.

[0004] To achieve the above objectives, the embodiments of this disclosure provide the following technical solutions:

[0005] A dicing apparatus is provided. The dicing apparatus includes: an optical microscope, a support base, a displacement control component, and a cutting blade; the optical microscope has a stage; the support base has a bearing platform, which is movable relative to the stage in a lifting direction perpendicular to the bearing surface of the stage; the displacement control component is disposed on the bearing platform; in a direction parallel to the bearing surface of the stage, the mounting end of the displacement control component is movable relative to the stage; the cutting blade is disposed on the mounting end of the displacement control component.

[0006] The above-mentioned dicing device can utilize an existing optical microscope, with the addition of a support base and displacement control components, without the need for a custom-designed high-precision moving platform. Furthermore, the support base and displacement control components are not only low in cost but also simple and portable in structure; therefore, the dicing device provided in this embodiment has a low cost.

[0007] Furthermore, the stage is configured to support the semiconductor structure to be cleaved. Since the stage can move relative to the substrate in a lifting direction, and the displacement control component is mounted on the stage, its mounting end can move relative to the substrate. Because the cutting blade is located at the mounting end of the displacement control component, the relative height between the semiconductor structure and the cutting blade can be adjusted by changing the relative height between the stage and the substrate. This allows for adaptation to semiconductor structures of different thicknesses, preventing over-cutting and damage to the stage. Secondly, the optical microscope provides real-time observation, and the stage can be stabilized to ensure visual control of the cutting process. Furthermore, by changing the magnification of the optical microscope lens, precise positioning of the cutting position can be achieved for accurate cleaving. Thirdly, the cutting blade can be replaced individually after wear. Therefore, the cleaving device provided in this embodiment is simple to operate, efficient, and capable of precise cleaving.

[0008] In some embodiments, the displacement control component includes: a first adjustment structure and a second adjustment structure; the first adjustment structure includes a first fixed end and a first adjustment end, the first adjustment end being movable relative to the first fixed end along a first direction, the first fixed end being disposed on the support platform, and the first adjustment end being connected to the cutting blade; the second adjustment structure includes a second fixed end and a second adjustment end, the second adjustment end being movable relative to the second fixed end along a second direction, and the second adjustment end being connected to the cutting blade; the first direction and the second direction intersect, and both the first direction and the second direction are parallel to the loading surface of the platform.

[0009] In some embodiments, the first adjustment structure includes a first micrometer, and / or the second adjustment structure includes a second micrometer.

[0010] In some embodiments, the displacement control component further includes: a third adjustment structure; the third adjustment structure includes a third fixed end and a third adjustment end, the third adjustment end being movable relative to the third fixed end along a third direction, the third fixed end being disposed on the support platform, and the third adjustment end being connected to the cutting blade; the third direction is perpendicular to the loading surface of the platform.

[0011] In some embodiments, the support base includes: a first support member and a drive unit; one end of the first support member is connected to the bearing platform, and the first support member is also connected to the drive unit, the drive unit being used to drive the first support member to move along the lifting direction.

[0012] In some embodiments, the support base further includes a second support member and a fixing member; the first support member and the drive unit are disposed in a cavity of the second support member; the fixing member passes through the side wall of the second support member and abuts against the first support member.

[0013] In some embodiments, the support base further includes: a first support member and a second support member, wherein the first support member and the second support member are cross-hinged.

[0014] In some embodiments, the angle between the extension direction of the cutting blade and the plane of the stage is 5° to 45°.

[0015] In some embodiments, the cutting end of the cutting blade may be conical or pyramidal in shape.

[0016] In some embodiments, the radius of curvature of the cutting end of the cutting blade ranges from 100 nm to 1 μm.

[0017] In some embodiments, the ratio of the mass of the support base to the mass of the displacement control component ranges from 2 to 20. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0019] Figure 1 A structural diagram of a dicing apparatus provided for some embodiments of this disclosure;

[0020] Figure 2 A structural diagram of a support base and displacement control assembly provided for some embodiments of this disclosure;

[0021] Figure 3 Another structural diagram of a support base provided for some embodiments of this disclosure;

[0022] Figure 4 This is a structural diagram of a cutting blade provided for some embodiments of the present disclosure. Detailed Implementation

[0023] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0024] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiment," "example," or "some examples" are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0025] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0026] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. The term "connected" should be interpreted broadly; for example, a "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection via an intermediate medium. The term "coupled," for example, indicates that two or more components have direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0027] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0028] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0029] The use of "applies to" or "configured to" in this document implies open and inclusive language, which does not exclude, as used herein, the inclusion of "parallel," "perpendicular," and "equal" situations as described, as well as situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; "equal" includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0030] Embodiments of this disclosure provide a dicing apparatus 100. (See reference...) Figure 1The dicing device 100 includes: an optical microscope 1, a support base 2, a displacement control component 3, and a cutting blade 4; the optical microscope 1 has a stage 11; the support base 2 has a bearing platform 20, which is movable relative to the stage 11 in a lifting direction M, the lifting direction M being perpendicular to the bearing surface 110 of the stage 11; the displacement control component 3 is disposed on the bearing platform 20; in a direction parallel to the bearing surface 110 of the stage 11, the mounting end 30 of the displacement control component 3 is movable relative to the stage 11; the cutting blade 4 is disposed on the mounting end 30 of the displacement control component 3.

[0031] In the aforementioned dicing apparatus 100, the stage 11 is configured to support the semiconductor structure D to be diced. The stage 20 is movable relative to the stage 11 in the lifting direction M. That is, during the dicing process, the stage 20 can be used to initially adjust the distance between the dicing blade 4 and the surface of the semiconductor structure D, as well as the distance between the dicing blade 4 and the lens of the optical microscope 1. The displacement control component 3 is configured to control the dicing blade 4 to form guide marks on the surface of the semiconductor structure D. The guide marks are used to guide the semiconductor structure D to dice along the guide marks during dicing.

[0032] The dicing device 100 provided in this embodiment can utilize an existing optical microscope 1, with the addition of a support base 2 and a displacement control component 3, without the need for additional customization of a high-precision moving platform. Furthermore, the support base 2 and the displacement control component 3 are not only low in cost but also simple and portable in structure. Therefore, the dicing device 100 provided in this embodiment has a low cost.

[0033] Furthermore, the stage 11 is configured to support the semiconductor structure to be cleaved. Since the stage 20 can move relative to the stage 11 in the lifting direction M, and the displacement control component 3 is mounted on the stage 20, the mounting end 30 of the displacement control component 3 can move relative to the stage 11. Since the cutting blade 4 is mounted on the mounting end 30 of the displacement control component 3, the relative height between the semiconductor structure D and the cutting blade 4 can be adjusted by adjusting the relative height between the stage 20 and the stage 11. This also accommodates semiconductor structures D of different thicknesses, avoiding excessive cutting and damage to the stage 11. Secondly, the optical microscope 1 provides real-time observation, and the stage 11 can be stabilized to ensure visual control of the cutting process. Furthermore, by changing the magnification of the lens of the optical microscope 1, precise positioning of the cutting position can be achieved for accurate cleaving. Thirdly, the cutting blade 4 can be replaced individually after wear. Therefore, the cleaving device 100 provided in this embodiment is simple to operate, efficient, and capable of precise cleaving.

[0034] The cutting blade 4 is located at the mounting end 30 of the displacement control component 3. In this way, the displacement control component 3 can not only control the spatial position of the cutting blade 4, so that the cutting blade 4 can accurately approach the target position of the semiconductor structure D that needs to be cleaved under the field of view of the optical microscope 1, but also control the cutting blade 4 to contact and squeeze the semiconductor structure D, and create guide marks for cleaving on the surface of the semiconductor structure D.

[0035] In some embodiments, the displacement control component 3 can be fixedly connected to the support platform 20 via a connector. This fixed connection effectively reduces relative displacement or vibration between the displacement control component 3 and the support platform 20, ensuring structural stability of the dicing device 100 during operation. It also avoids errors caused by loosening or displacement, ensuring that the movement trajectory of the displacement control component 3 is accurately transmitted to the support platform 20. Furthermore, in the event of a malfunction in the dicing device 100, it facilitates rapid disassembly, maintenance, or replacement of the displacement control component 3, reducing downtime of the dicing device 100.

[0036] For example, the connectors include threaded connectors, such as bolts, screws, etc.

[0037] In some embodiments, the cutting blade 4 and the mounting end 30 of the displacement control component 3 are fixed by a mounting member.

[0038] For example, mounting components include threaded connections such as bolts, screws, etc.

[0039] In some embodiments, in conjunction with reference Figure 1 and Figure 2 The displacement control component 3 includes: a first adjustment structure 31 and a second adjustment structure 32; the first adjustment structure 31 includes a first fixed end 311 and a first adjustment end 312, the first adjustment end 312 is movable relative to the first fixed end 311 along a first direction X, the first fixed end 311 is disposed on the support platform 20, and the first adjustment end 312 is connected to the cutting blade 4; the second adjustment structure 32 includes a second fixed end 321 and a second adjustment end 322, the second adjustment end 322 is movable relative to the second fixed end 321 along a second direction Y, and the second adjustment end 322 is connected to the cutting blade 4; the first direction X and the second direction Y intersect, and both the first direction X and the second direction Y are parallel to the loading surface 110 of the support platform 11.

[0040] Since the first adjustment structure 31 and the second adjustment structure 32 can independently adjust the cutting blade 4, the operator can quickly fine-tune the position of the cutting blade 4 without repeated calibration, thus improving the dicing efficiency. By separating the movement of the cutting blade 4 in the first direction X and the second direction Y, high-precision, high-flexibility, and high-stability cutting control can be achieved. Furthermore, by combining the movement of the first adjustment structure 31 and the second adjustment structure 32, straight, oblique, curved, or stepped cutting can be completed, achieving multi-directional cutting capabilities and flexibly adapting to complex cutting needs.

[0041] In some embodiments, the first adjustment structure 31 includes a first micrometer. The graduation value of the first adjustment structure 31 is in the submicrometer range. Because the graduation value of the first adjustment structure 31 is small, this improves the accuracy of the cutting blade 4 in creating guide marks for dicing on the surface of the semiconductor structure D, thereby improving the dicing accuracy of the dicing apparatus 100.

[0042] For example, the scale value of the first adjustment structure 31 ranges from 0.1 μm to 1 μm.

[0043] For example, the scale value of the first adjustment structure 31 is 0.1 μm, 0.5 μm or 1 μm.

[0044] In some embodiments, the second adjustment structure 32 includes a second micrometer. The graduation value of the second adjustment structure 32 is in the submicrometer range. Because the graduation value of the second adjustment structure 32 is small, this improves the accuracy of the cutting blade 4 in creating guide marks for dicing on the surface of the semiconductor structure D, thereby improving the dicing accuracy of the dicing apparatus 100.

[0045] For example, the scale value of the second adjustment structure 32 ranges from 0.1 μm to 1 μm.

[0046] For example, the scale division of the second adjustment structure 32 is 0.1 μm, 0.5 μm, or 1 μm.

[0047] The dicing device 100 provided in this embodiment can initially adjust the distance between the dicing blade 4 and the semiconductor structure D by moving the support stage 20 relative to the platform 11 in the lifting direction M, so that the dicing blade 4 is closer to or farther away from the surface of the semiconductor structure D.

[0048] In some embodiments, the displacement control assembly 3 further includes a third adjustment structure 33. The third adjustment structure 33 includes a third fixed end 331 and a third adjustment end 332. The third adjustment end 332 is movable relative to the third fixed end 331 along a third direction Z. The third fixed end 331 is disposed on the support platform 20, and the third adjustment end 332 is connected to the cutting blade 4. The third direction Z is perpendicular to the loading surface 110 of the platform 11.

[0049] In some embodiments, the third adjustment structure 33 includes a third micrometer. The graduation value of the third adjustment structure 33 is in the submicrometer range. Because the graduation value of the third adjustment structure 33 is small, this improves the accuracy of the cutting blade 4 in creating guide marks for dicing on the surface of the semiconductor structure D, thereby improving the dicing accuracy of the dicing apparatus 100.

[0050] For example, the scale value of the third adjustment structure 33 ranges from 0.1 μm to 1 μm.

[0051] For example, the scale value of the third adjustment structure 33 is 0.1 μm, 0.5 μm or 1 μm.

[0052] Continue to refer to Figure 1 The optical microscope 1 includes a first adjustment axis T1 and a second adjustment axis T2. The first adjustment axis T1 can drive the stage 11 to move along a first direction X, and the second adjustment axis T2 can drive the stage 11 to move along a second direction Y.

[0053] Continue to refer to Figure 1 The optical microscope 1 has at least two lenses J, and the at least two lenses J have different magnifications.

[0054] For example, an optical microscope 1 has three lenses J: a first lens, a second lens, and a third lens. The magnification of the first, second, and third lenses is different. Specifically, the magnification of the first lens is greater than that of the second lens and also greater than that of the third lens, with the second lens having a higher magnification than the third lens.

[0055] Lenses J with different magnifications can speed up the adjustment of the distance between the cutting blade 4 and the semiconductor structure D, so as to ensure the precise dicing of the semiconductor structure D and improve the dicing efficiency.

[0056] In some embodiments, reference Figure 1 or Figure 2 The support base 2 includes: a first support member 21 and a drive unit (not shown); one end of the first support member 21 is connected to the support platform 20, and the first support member 21 is also connected to the drive unit, which is used to drive the first support member 21 to move along the lifting direction M21.

[0057] Continue to refer to Figure 1 or Figure 2 The support base 2 also includes a second support member 22 and a fixing member 23; the first support member 21 and the drive unit are disposed in the cavity of the second support member 22; the fixing member 23 passes through the side wall of the second support member 22 and presses against the first support member 21.

[0058] Continue to refer to Figure 1 or Figure 2 The support base 2 also includes a base 24, and the second support member 22 is fixedly connected to the base 24. The base 24, as the bottom structure of the support base 2, can be fixed to the ground or other base by bolts or welding to ensure the stability of the overall structure.

[0059] In other embodiments, reference is made to... Figure 3 The support base 2 also includes a first support member 21 and a second support member 22, which are cross-hinged.

[0060] In some embodiments, the cutting blade 4 may comprise a metal blade or an alloy blade. Since metal or alloy provides sufficient strength, this ensures that the cutting blade 4 will not deform or break under stress, thereby maintaining the stability of the blade tip shape and increasing the service life of the cutting blade 4.

[0061] For example, the cutting blade 4 may include a tool steel blade, a stainless steel blade, or a carbide blade.

[0062] In some embodiments, the angle between the extension direction of the cutting blade 4 and the plane of the stage 11 is 5° to 45°; for example, 5°, 15°, 30°, 40°, or 45°. An angle greater than 5° between the extension direction of the cutting blade 4 and the plane of the stage 11 provides sufficient pressure transmission for the cutting blade 4. An angle less than 45° prevents the cutting blade 4 from obstructing the field of view of the optical microscope 1, ensuring unimpeded observation at near working distances without interrupting the cutting process, thus guaranteeing the continuity of the cutting.

[0063] refer to Figure 4 The cutting end 40 of the cutting blade 4 has a cone or pyramid shape, which can reduce the cutting resistance between the cutting blade 4 and the semiconductor structure D and improve the cutting accuracy.

[0064] The radius of curvature of the cutting end 40 of the cutting blade 4 ranges from 100 nm to 1 μm. For example, the radius of curvature of the cutting end 40 of the cutting blade 4 can be 100 nm, 200 nm, 500 nm, 600 nm or 1 μm.

[0065] The radius of curvature of the cutting end 40 of the cutting blade 4 is greater than 100 nm, ensuring the mechanical strength of the cutting blade 4. The radius of curvature of the cutting end 40 is less than 1 μm, which reduces the contact area between the cutting end 40 and the semiconductor structure D to below the micrometer level. This significantly reduces the contact area between the cutting blade 4 and the semiconductor structure D, concentrating the cutting pressure in a very small area and thus reducing frictional resistance during the cutting process. Furthermore, nanometer-scale kerf widths can be achieved, thereby improving cutting accuracy.

[0066] In some embodiments, the cutting end 40 of the cutting blade 4 has a single-crystal diamond layer. The single-crystal diamond layer is hard and has excellent thermal stability and chemical inertness, which can not only improve cutting efficiency but also extend the service life of the cutting blade 4.

[0067] In some embodiments, the ratio of the mass of the support 2 to the mass of the displacement control component 3 ranges from 2 to 20. For example, the ratio is 2, 5, 10, 15, or 20. The mass of the support 2 is greater than the mass of the displacement control component 3, so that the center of gravity of the support 2 can remain stable during the operation of the dicing device 100. Secondly, the larger mass of the support 2 can also absorb the vibration caused by the cutting blade 4 during operation, preventing the vibration from being transmitted to the stage 11 of the optical microscope 1, thereby ensuring the clarity and cutting accuracy of the observation on the lens side of the optical microscope 1.

[0068] For example, the material of the support 2 includes metals, such as stainless steel, oxygen-free copper, alloy copper, alloy aluminum, etc.

[0069] Embodiments of this disclosure also provide a method for dicing. Specifically, it includes:

[0070] Step 1: Use a dicing device 100 to form guide marks on the surface of semiconductor structure D.

[0071] Here, the depth of the guide mark can be 1 / 2 to 1 / 5 of the thickness of the semiconductor structure D. The semiconductor structure D can be a wafer.

[0072] Step one may include:

[0073] Step 1: Fix the semiconductor structure D to be cut on the stage 11 of the optical microscope 1, and then move the area to be cut of the semiconductor structure D to the center of the field of view of the optical microscope 1 through the stage 11 of the optical microscope 1, and the area to be cut of the semiconductor structure D needs to be within the movable range of the cutting blade 4.

[0074] In some embodiments, the semiconductor structure D to be cut is fixed on the stage 11 by vacuum adsorption, spring clamping, or bolt locking. In other embodiments, the method of fixing the semiconductor structure D to be cut on the stage 11 may also depend on the type of optical microscope 1, and is not limited thereto.

[0075] Step 2: Adjust the distance between the support stage 20 and the stage 11 along the lifting direction M so that the cutting blade 4 is between the semiconductor structure D and the lens of the optical microscope 1.

[0076] That is, along the lifting direction M, the cutting blade 4 is higher than the semiconductor structure D and lower than the lens of the optical microscope 1, and the adjustment range needs to be within the range of the displacement control component 3 along the lifting direction M.

[0077] Step 3: Adjust the position of the cutting blade 4 by means of the first adjustment structure 31, the second adjustment structure 32 and the third adjustment structure 33, so that the cutting blade 4 gradually approaches the target cutting area of ​​the semiconductor structure D.

[0078] Here, the position of the cutting blade 4 can be observed through the low-magnification lens J of the optical microscope 1. The first adjustment structure 31 and the second adjustment structure 32 are then adjusted to bring the cutting blade 4 into the field of view of the lens J of the optical microscope 1. The first adjustment structure 31, the second adjustment structure 32, and the third adjustment structure 33 are then gradually fine-tuned to bring the cutting blade 4 closer to the target cutting area of ​​the semiconductor structure D. When the distance between the cutting blade 4 and the target cutting area is less than 100 micrometers, the lens J with higher magnification is switched on, and the first adjustment structure 31, the second adjustment structure 32, and the third adjustment structure 33 are adjusted again to bring the cutting blade 4 closer to the target cutting area of ​​the semiconductor structure D.

[0079] Among them, lens J with lower magnification has a wider field of view and allows for more comprehensive observation. Lens J with higher magnification allows for more detailed observation and can improve cutting accuracy.

[0080] In this way, the cutting blade 4 can be positioned within a 10μm range of the target cutting area of ​​the semiconductor structure D, thereby improving the cutting efficiency.

[0081] Step 4: Adjust the distance between the cutting blade 4 and the semiconductor structure D in the third direction by adjusting the third adjustment structure 33, so that the cutting blade 4 contacts the semiconductor structure D and squeezes the semiconductor structure D.

[0082] Here, to avoid damage to the cutting blade 4 and to increase the number of times the cutting blade 4 can be used, the depth to which the cutting blade 4 extrudes the semiconductor structure D in one pass needs to be controlled within the range of 2μm to 10μm. This can be adjusted by rotating the third adjustment end 332 of the third adjustment structure 33.

[0083] When the third adjustment structure 33 includes a third micrometer, the adjustment can be controlled by rotating the scale of the third micrometer.

[0084] There are two methods for forming the guide mark of the semiconductor structure D. The first method involves adjusting the first adjustment structure 31 and the second adjustment structure 32 of the displacement control assembly 3 while the dicing blade 4 is pressing against the semiconductor structure D. The first and second adjustment structures 31 and 32 move the dicing blade 4, causing it to have a certain positional displacement relative to the semiconductor structure D. This displacement forms the guide mark of the semiconductor structure D. The second method involves keeping the dicing blade 4 and the semiconductor structure D in a pressing state, with the dicing blade 4 stationary, and moving the first adjustment axis T1 and the second adjustment axis T2 of the stage 11 of the optical microscope 1. This causes the semiconductor structure D to have a certain positional displacement relative to the dicing blade 4, and this displacement forms the guide mark of the semiconductor structure D.

[0085] The guide mark is drawn to the edge of the semiconductor structure D, and the extension of the guide mark passes through the target cleavage region.

[0086] Here, the guide marks formed are obvious cracks visible to the naked eye.

[0087] Step 2: Use cutting blade 4 to repeatedly cut along the guide mark to deepen the guide mark.

[0088] Step S2 can increase the success rate of dicing the semiconductor structure D. Before repeatedly cutting along the guide line using the dicing blade 4, the dicing blade 4 can be removed from the mounting end 30 of the displacement control assembly 3, and the semiconductor structure D can be removed from the stage 11.

[0089] Here, the cutting blade 4 can be held and repeatedly cut along the guide marks on the surface of the semiconductor structure D.

[0090] Step 3: Cleave the semiconductor structure D along the guide line.

[0091] Because guide marks are pre-set on the surface of semiconductor structure D, subsequent dicing can be achieved without a large force.

[0092] One method for cleaving semiconductor structure D along the guide mark is to place a steel needle directly below the guide mark of semiconductor structure D so that one side of semiconductor structure D is raised while the other side is fixed. Then, the raised side is pressed down with force. At this time, semiconductor structure D will cleave along the guide mark to form a vertical cleavage cross section.

[0093] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A dicing device, characterized in that, include: An optical microscope having a stage; A support base having a bearing platform, the bearing platform being movable relative to the loading platform in a lifting direction, the lifting direction being perpendicular to the loading surface of the loading platform; A displacement control component is disposed on the support platform; the mounting end of the displacement control component can move relative to the support platform in a direction parallel to the loading surface of the platform. The cutting blade is located at the mounting end of the displacement control component.

2. The dicing apparatus according to claim 1, characterized in that, The displacement control component includes: a first adjustment structure and a second adjustment structure; The first adjustment structure includes a first fixed end and a first adjustment end. The first adjustment end is movable relative to the first fixed end along a first direction. The first fixed end is disposed on the support platform, and the first adjustment end is connected to the cutting blade. The second adjustment structure includes a second fixed end and a second adjustment end. The second adjustment end is movable relative to the second fixed end in a second direction, and the second adjustment end is connected to the cutting blade. The first direction and the second direction intersect, and both the first direction and the second direction are parallel to the loading surface of the stage.

3. The dicing apparatus according to claim 2, characterized in that, The first adjustment structure includes a first micrometer, and / or the second adjustment structure includes a second micrometer.

4. The dicing apparatus according to claim 2, characterized in that, The displacement control component further includes: a third adjustment structure; The third adjustment structure includes a third fixed end and a third adjustment end. The third adjustment end is movable relative to the third fixed end in a third direction. The third fixed end is disposed on the support platform, and the third adjustment end is connected to the cutting blade. The third direction is perpendicular to the loading surface of the stage.

5. The dicing apparatus according to any one of claims 1 to 4, characterized in that, The support base includes: a first support member and a drive unit; One end of the first support member is connected to the support platform, and the first support member is also connected to the drive unit, which is used to drive the first support member to move along the lifting direction.

6. The dicing apparatus according to claim 5, characterized in that, The support base also includes a second support member and a fixing member; The first support member and the driving unit are disposed within the cavity of the second support member; The fastener passes through the side wall of the second support member and presses against the first support member.

7. The dicing apparatus according to any one of claims 1 to 4, characterized in that, The support base further includes: a first support member and a second support member, wherein the first support member and the second support member are cross-hinged.

8. The dicing apparatus according to any one of claims 1 to 4, characterized in that, The angle between the extension direction of the cutting blade and the plane of the stage is 5° to 45°.

9. The dicing apparatus according to any one of claims 1 to 4, characterized in that, The cutting end of the cutting blade can be conical or pyramidal in shape.

10. The dicing apparatus according to claim 9, characterized in that, The radius of curvature of the cutting end of the cutting blade ranges from 100 nm to 1 μm.

11. The dicing apparatus according to any one of claims 1 to 4, characterized in that, The ratio of the mass of the support base to the mass of the displacement control component ranges from 2 to 20.

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