A wafer processing equipment

Abstract

This utility model relates to the field of semiconductor processing technology and discloses a wafer processing equipment. The wafer processing equipment includes a cold plate, a temperature control component, and a radio frequency (RF) component. The cold plate is used to hold the wafer; the temperature control component is connected to the cold plate and is used to regulate the temperature of the cold plate; the RF component includes an RF power matching unit and a conductive rod, with one end of the conductive rod connected to the lower surface of the cold plate and the second end connected to the RF power matching unit. The RF component is used to generate an electric field on the upper surface of the cold plate. Compared with traditional equipment, this wafer processing equipment solves the problems of rapid heating and edge warping caused by uneven temperature when placing room-temperature wafers on a hot plate. By controlling the temperature of the cold plate and the frequency of the RF, the wafer reaction is controlled, reducing the wafer defect rate caused by this process. It eliminates the need for heating structures, thermal insulation structures, or rapid temperature rise / fall structures, thus reducing equipment costs.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a wafer processing equipment. Background Technology

[0002] In semiconductor equipment, high-temperature heating is often essential in traditional systems. Plasma is generated by ionizing process gas using coils. Simultaneously, the wafer is placed on a heating pad, which is heated by heating wires. This high temperature promotes the activity of molecules / ions in the photoresist on the wafer surface. When the plasma enters the process cavity and comes into contact with the more active molecules / ions on the wafer surface, a rapid reaction occurs, achieving etching / removal of the photoresist. However, because the process temperature of the heating pad during photoresist removal is relatively high, typically maintained at 275°C, and the plasma from the upper cavity to the heating pad surface is generally energetic, with the energetic plasma ions mainly concentrated at the wafer center and then diffusing towards the edges, placing a room-temperature wafer on a high-temperature heating pad can easily lead to edge warping if the pad surface temperature is uneven and the energetic plasma directly affects the wafer, thus reducing the yield of the finished product.

[0003] Therefore, there is an urgent need for a wafer processing equipment to solve the aforementioned problems. Utility Model Content

[0004] Based on the above, the purpose of this utility model is to provide a wafer processing equipment that solves the problem of edge warping caused by rapid heating and uneven temperature when placing room temperature wafers on a hot plate.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A wafer processing device, comprising:

[0007] Cold trays are used to hold wafers;

[0008] A temperature control component is connected to the cold plate, and the temperature control component is used to adjust the temperature of the cold plate;

[0009] The radio frequency (RF) component includes an RF power matching unit and a conductive rod, with a first end of the conductive rod connected to the lower surface of the cold plate and a second end of the conductive rod connected to the RF power matching unit. The RF component is used to generate an electric field on the upper surface of the cold plate.

[0010] As a preferred technical solution for wafer processing equipment, a crown spring is provided below the cold plate, and a columnar part is provided at the first end of the conductive rod, which can be inserted into the crown spring;

[0011] The output end of the RF power matching unit is provided with a first plate portion, and the second end of the conductive rod is provided with a second plate portion. One of the first plate portion and the second plate portion is provided with a waist-shaped hole, and the other is provided with a threaded hole. A screw passes through the waist-shaped hole and is threaded into the threaded hole.

[0012] As a preferred technical solution for wafer processing equipment, the radio frequency component further includes a shielding cover, and the conductive rod is disposed inside the shielding cover.

[0013] As a preferred technical solution for wafer processing equipment, the shielding cover is composed of multiple cover bodies spliced ​​together, the multiple cover bodies are detachably connected, and beryllium copper strips are provided between the connection parts of adjacent cover bodies.

[0014] As a preferred technical solution for wafer processing equipment, the distance between the inner wall of the shield and the conductive rod is in the range of 15mm-30mm.

[0015] As a preferred technical solution for wafer processing equipment, the temperature control component includes a temperature controller and pipelines, and a flow channel is provided inside the cold plate. The temperature controller is connected to the flow channel through the pipelines.

[0016] As a preferred technical solution for wafer processing equipment, the temperature control component further includes a temperature detection sensor, which is used to detect the temperature of the upper surface of the cold plate.

[0017] As a preferred technical solution for wafer processing equipment, the cold tray includes a tray surface plate, an intermediate plate, a bottom plate, and connecting pillars connected sequentially from top to bottom. The tray surface plate has uniformly arranged flow channel grooves on the side near the intermediate plate, and the inflection points of the flow channel grooves are provided with rounded corner transitions. The intermediate plate is connected to the tray surface plate so that the flow channel is formed between the flow channel grooves and the intermediate plate.

[0018] The intermediate layer plate has uniformly arranged clearance grooves on the side near the bottom layer plate. The bottom layer plate is connected to the intermediate layer plate so that a clearance channel is formed between the clearance grooves and the bottom layer plate. The area of ​​the tray plate where the flow channel grooves are not provided has a detection hole. The connecting column has a through hole. One end of the clearance channel is connected to the detection hole, and the other end is connected to the through hole. The temperature detection sensor passes through the through hole and the clearance channel in sequence and extends into the detection hole.

[0019] As a preferred technical solution for wafer processing equipment, the flow channel is circumferentially distributed from the inside to the outside and flows in one direction.

[0020] As a preferred technical solution for wafer processing equipment, the wafer processing equipment further includes a ceramic gas equalization ring, which is arranged around the cold plate and connected to the side wall of the cold plate, and the ceramic gas equalization ring is provided with a plurality of uniformly spaced gas equalization holes.

[0021] The beneficial effects of this utility model are as follows:

[0022] This invention provides a wafer processing device. When the wafer needs processing, the temperature control component adjusts the temperature of the cold plate to a preset temperature, which can be 150°C, replacing the 275°C hot plate environment. This solves the problem of rapid heating and edge warping caused by uneven temperature when the wafer is placed on the hot plate at room temperature. Furthermore, when the cold plate is at the preset temperature, the activity of the photoresist on the wafer is reduced. The RF power matching device applies a current of a preset frequency band to the cold plate through conductive rods, thereby generating an electric field on the surface of the cold plate. A sheath layer, also known as a dark area, is formed on the upper layer of the cold plate surface. The RF generated by the RF power matching device controls the ion energy or plasma density, accelerating the plasma that diffuses and drifts from above to the edge of the sheath layer towards the wafer on the plate surface. This enhances the bombardment of the photoresist on the wafer by the plasma, thereby accelerating the photoresist removal process by using plasma bombardment, thus compensating for the reduced photoresist activity. This invention replaces the high temperature of the hot plate with a low temperature electric field to increase the activity of photoresist molecules on the wafer surface, accelerate the reaction with plasma, reduce the probability of edge warping of the wafer, and increase the wafer yield. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0024] Figure 1 This is a front view of the wafer processing equipment provided in a specific embodiment of this utility model;

[0025] Figure 2 This is a cross-sectional view of the wafer processing equipment provided in a specific embodiment of this utility model;

[0026] Figure 3 This is a schematic diagram of the structure of the conductive rod provided in a specific embodiment of this utility model;

[0027] Figure 4 This is a side view of the wafer processing equipment provided in a specific embodiment of this utility model;

[0028] Figure 5This is a schematic diagram of the structure of the first cover and the beryllium copper strip provided in a specific embodiment of this utility model;

[0029] Figure 6 This is a schematic diagram of the structure of the third cover and the beryllium copper strip provided in a specific embodiment of this utility model;

[0030] Figure 7 This is a partial structural cross-sectional view of the wafer processing equipment provided in a specific embodiment of this utility model;

[0031] Figure 8 This is a partial structural schematic diagram of the wafer processing equipment provided in a specific embodiment of this utility model;

[0032] Figure 9 This is a cross-sectional view of the tray shelf provided in a specific embodiment of this utility model;

[0033] Figure 10 This is a cross-sectional view of the intermediate layer plate provided in a specific embodiment of this utility model.

[0034] The markings in the image are as follows:

[0035] 1. Cold plate; 11. Flow channel; 12. Plate top shelf; 121. Flow channel groove; 122. Inspection hole; 13. Middle shelf; 131. Clearance groove; 14. Bottom shelf; 15. Connecting post; 16. Crown spring;

[0036] 2. Temperature control components; 21. Piping; 22. Cold plate pressing blocks;

[0037] 3. Radio frequency (RF) component; 31. RF power matching unit; 311. First sheet body; 32. Conductive rod; 321. Columnar part; 322. Second sheet body;

[0038] 4. Shielding cover; 41. First cover body; 411. First flange; 412. Second flange; 413. Arc-shaped flange; 42. Second cover body; 43. Third cover body; 431. Third flange;

[0039] 5. Beryllium copper strip; 6. Temperature sensor; 7. Ceramic gas distribution ring; 8. Cavity. Detailed Implementation

[0040] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0041] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0042] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0043] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0044] like Figure 1 and Figure 2As shown, this embodiment provides a wafer processing apparatus, which includes a cold plate 1, a temperature control component 2, and an radio frequency (RF) component 3. The cold plate 1 is used to hold the wafer; the temperature control component 2 is connected to the cold plate 1 and is used to regulate the temperature of the cold plate 1; the RF component 3 includes an RF power matching unit 31 and a conductive rod 32. The first end of the conductive rod 32 is connected to the lower surface of the cold plate 1, and the second end of the conductive rod 32 is connected to the RF power matching unit 31. The RF component 3 is used to generate an electric field on the upper surface of the cold plate 1. When the wafer needs to be processed, the temperature control component 2 adjusts the temperature of the cold plate 1 to a preset temperature, which can be 150°C, replacing the 275°C operating environment of the hot plate, thus solving the problem of rapid heating and edge warping caused by uneven temperature when the wafer is placed on the hot plate at room temperature. Furthermore, since the activity of the photoresist on the wafer decreases when the cold disk 1 is at a preset temperature, the RF power matching unit 31 applies a current of a preset frequency band to the cold disk 1 through the conductive rod 32, thereby generating an electric field on the surface of the cold disk 1. A sheath layer, also known as a dark area, is formed on the upper layer of the cold disk 1 surface. The RF generated by the RF power matching unit 31 controls the ion energy or plasma density, accelerating the plasma that diffuses and drifts from above to the edge of the sheath layer towards the wafer on the disk surface, enhancing the bombardment of the photoresist on the wafer by the plasma, thereby accelerating the photoresist removal process by using plasma bombardment, thus compensating for the impact of reduced photoresist activity. In this embodiment, the low temperature and electric field replace the high temperature of the hot disk to increase the activity of photoresist molecules on the wafer surface, accelerate the reaction with plasma, and at the same time, the wafer does not have the problem of edge warping, thus increasing the wafer yield.

[0045] In this embodiment, by using radio frequency, the radio frequency power matching unit 31 outputs a fixed 13.56MHz frequency band current to the cold plate 1.

[0046] Furthermore, such as Figure 2 and Figure 3 As shown, a crown spring 16 is provided below the cold plate 1, and a columnar portion 321 is provided at the first end of the conductive rod 32, which can be inserted into the crown spring 16. A first plate portion 311 is provided at the output end of the RF power matching unit 31, and a second plate portion 322 is provided at the second end of the conductive rod 32. One of the first plate portion 311 and the second plate portion 322 has a waist-shaped hole, and the other has a threaded hole. A screw passes through the waist-shaped hole and is threaded into the threaded hole, achieving conductive bonding and connection between the first plate portion 311 and the second plate portion 322. In this embodiment, the conductive rod 32 is a copper rod, and it serves as the main bridge connecting the RF power matching unit 31 and the cold plate 1. Preferably, the surface of the conductive rod 32 is silver-plated to enhance its conductivity and service life.

[0047] Currently, the RF power matching unit 31 and the cold plate 1 are spatially misaligned. Analyzing the relative positions of the RF power matching unit 31 and the cold plate 1, in this embodiment, the conductive rod 32 is L-shaped. One end of the conductive rod 32 is directly locked to the RF power matching unit 31 using a flat second body portion 322. Power is turned on by the surface of the second body portion 322 contacting the surface of the first body portion 311 at the output end of the RF power matching unit 31. The other end is an insertion type. By embedding a copper crown spring 16 inside the cold plate 1, the other end of the conductive rod 32 can be directly inserted into the crown spring 16 and locked. The reasons for adopting the above structure are as follows: On the one hand, if both ends adopt surface contact conduction, both ends of the conductive rod 32 need to be made into plates, and the plates have more sharp edges, which will increase the possibility of discharge at the sharp edges; on the other hand, if both ends adopt an insertion structure, although the structure is simpler, this structure requires very precise relative positions of the cold plate 1 and the RF power matching unit 31. If there is a slight deviation, the conductive rod 32 will not be able to be inserted. At the same time, a relatively large space is required because the insertion, locking and rotation are required, which necessitates a certain rotation radius, wasting space and increasing the cost. Therefore, in this embodiment, one end of the conductive rod 32 adopts an insertion type, and the columnar portion 321 of the first end of the conductive rod 32 reduces the possibility of discharge. Moreover, the fixing method of the crown spring 16 makes the contact surface between the conductive rod 32 and the cold plate 1 larger and the contact effect better, making the current conduction effect more obvious. The other end of the conductive rod 32 adopts a surface contact locking type, and the first piece 311 and the second piece 322 are locked by screws. The screws can move in the waist-shaped hole, thereby increasing the allowable installation error, so that the conductive rod 32 can be assembled without high processing precision, improving the assembly convenience and reducing the assembly difficulty.

[0048] Preferably, the radio frequency component 3 further includes a shielding cover 4, with the conductive rod 32 disposed inside the shielding cover 4. The shielding cover 4 better ensures that when a 13.56MHz current acts on the cold plate 1, the resulting electromagnetic interference will not affect other electrical components within the wafer processing equipment, thus allowing for better operation on the cold plate 1. In this embodiment, the shielding cover 4 is a metal cover.

[0049] In this embodiment, the distance between the inner wall of the shielding cover 4 and the conductive rod 32 is 15mm-30mm, so that the distance between the shielding cover 4 and the conductive rod 32 is within a safe distance. The safe distance means that when the conductive rod 32 is connected to the current, it will not discharge because it is too close to the shielding cover 4. At the same time, the shielding cover 4 cannot be too far away, so as to ensure that the generated radio frequency energy is completely blocked inside the shielding cover 4, so as to avoid the generated radio frequency from interfering with the external electrical components and causing radiation hazards to the human body.

[0050] Furthermore, such as Figures 4-6As shown, the shielding cover 4 is composed of multiple covers that are detachably connected. Beryllium copper strips 5 are provided between the connecting parts of adjacent covers. In this embodiment, the shielding cover 4 includes a first cover 41, a second cover 42, and a third cover 43. The first cover 41 and the second cover 42 are square after being spliced ​​together. The connecting parts of the first cover 41 and the second cover 42 are provided with first flanges 411. The first flanges 411 of the first cover 41 and the second cover 42 are locked with multiple screws to reduce the risk of warping of the first flanges 411. The surfaces of the two first flanges 411 have good contact and can be directly grounded after contacting the shielding cover 4. The top of the square cover is provided with a second flange 412, which is connected to the bottom of the cold plate 1 with screws to avoid gaps. The third cover 43 is cylindrical. A connecting hole composed of an arc-shaped flange 413 is provided between the first cover 41 and the second cover 42. The connecting hole is located on the side of the square cover near the RF power matching unit 31. One end of the third cover 43 extends into and connects to the connecting hole, and the other end of the third cover 43 is provided with a third flange 431. The third flange 431 is connected to the RF power matching unit 31 by screws. The square cover and the third cover 43 together achieve shielding of the conductive rod 32. The first cover 41 and the second cover 42 are symmetrically arranged for easy maintenance. In this embodiment, the shielding cover 4 adopts a structure of multiple covers spliced ​​together, rather than a single structure. When maintaining the wafer processing equipment, it is not necessary to completely disassemble the shielding cover 4, which improves the convenience of maintenance. Furthermore, a beryllium copper strip 5 is provided between the second flange 412 and the cold plate 1, a beryllium copper strip 5 is provided between the third cover 43 and the connecting hole, and a beryllium copper strip 5 is provided between the third flange 431 and the RF power matching unit 31, ensuring better contact between the shielding cover 4 and the grounded metal parts, and conducting the RF signal more quickly and efficiently. In this embodiment, the beryllium copper strip 5 is connected to the cover by riveting or by bonding with conductive adhesive.

[0051] Furthermore, such as Figures 7-10As shown, in this embodiment, the temperature control component 2 includes a temperature controller and a pipeline 21. A flow channel 11 is provided inside the cold plate 1, and the temperature controller is connected to the flow channel 11 through the pipeline 21. The surface of the cold plate 1 is heated by flowing fluorinated liquid through the flow channel 11 inside the cold plate 1. A separate temperature controller for controlling the temperature of the fluorinated liquid is placed next to the equipment. The temperature controller heats the fluorinated liquid, which then flows into the flow channel 11 of the cold plate 1 through a special pipeline 21. The heated fluorinated liquid transfers heat to the cold plate 1 through heat transfer. However, this heating function is limited (compared to a dedicated hot plate) and cannot effectively stimulate the molecular activity of the photoresist on the wafer surface. This further complicates the structure of the radio frequency component 3. When the cold plate 1 is controlled at 150 degrees Celsius by the fluorinated liquid, which is lower than the 275 degrees Celsius of the hot plate, the photoresist activity weakens. The radio frequency component 3 compensates for the reduced photoresist activity by controlling the ion energy or plasma density to enhance the bombardment of the photoresist by the plasma. In summary, a temperature-controlled fluorinated liquid and radio frequency component 3 are used to replace the heating structure.

[0052] In this embodiment, the temperature control component 2 further includes a temperature detection sensor 6, which is used to detect the temperature of the upper surface of the cold plate 1. The temperature controller adjusts the temperature of the cold plate 1 more effectively based on the detection data from the temperature detection sensor 6. When insulating the cold plate 1, the temperature is mainly maintained and controlled by the temperature controller. The temperature detection sensor 6 monitors the temperature of the plate surface in real time and feeds it back to the temperature controller via a host computer. At a set temperature, the temperature controller adjusts the state of the flowing fluorinated liquid in real time to ensure that the surface temperature of the plate is always maintained at a certain level.

[0053] In this embodiment, the fluorinated liquid is connected from the temperature controller to the cold plate 1 through the pipeline 21. The fluorinated liquid flows within the flow channel 11 of the cold plate 1, and the temperature controller controls the temperature or flow rate of the fluorinated liquid, thereby controlling the temperature of the upper surface of the cold plate 1. It should be noted that high-speed flow of the fluorinated liquid can reduce the axial temperature rise of the fluid itself (temperature difference between the outlet and the inlet), improving the temperature uniformity of the surface of the cold plate 1. If the flow rate is too low, it may lead to a decrease in heat exchange rate, resulting in local overheating (especially in high heat load areas). However, if the flow rate is too high, although it can shorten the system response time, it may also cause overshoot due to inertia, leading to temperature overload, etc. Therefore, the flow rate of the fluorinated liquid needs to be adjusted accordingly to control the temperature. Its flow rate is mainly controlled by the pump inside the external temperature controller.

[0054] like Figure 1 and Figure 7As shown, in this embodiment, the fluorinated liquid flows from the external temperature controller through pipe 21, cold plate pressure block 22, and flow channel 11 of cold plate 1 to the surface of cold plate 1, and then flows back to the external temperature controller via the other end outlet. The temperature of the fluorinated liquid is set by the external temperature controller, generally at 150°C, to ensure that the fluorinated liquid flowing on the plate surface is continuously maintained at around 150°C.

[0055] It should be noted that in existing technologies, the design challenges of temperature control systems lie in the design of the flow channels and the temperature sensing point design of the temperature sensor. Insufficient flow channels result in poor temperature control. Flow channels positioned too close to the inside or outside of the wafer lead to significant temperature differences on the wafer surface, causing wafer warping. Furthermore, dead corners or sharp edges within the flow channels can cause turbulence in the fluorinated liquid, leading to flow blockage and uneven temperature control. In existing technologies, the flow channels are located on the surface of the cold plate and directly above the temperature sensor. This interference forces the temperature sensor to be positioned below the plate, far from the surface, resulting in ineffective temperature detection and excessive measurement deviation.

[0056] To solve the above problems, the cold plate 1 includes a plate surface plate 12, a middle plate 13, a bottom plate 14, and a connecting post 15 connected from top to bottom. The plate surface plate 12 has flow channel grooves 121 evenly arranged on the side near the middle plate 13. The inflection points of the flow channel grooves 121 are provided with rounded transitions. The middle plate 13 is connected to the plate surface plate 12 so that a flow channel 11 is formed between the flow channel grooves 121 and the middle plate 13. The middle plate 13 has clearance grooves 131 evenly arranged on the side near the bottom plate 14. The bottom plate 14 is connected to the middle plate 13 so that a clearance channel is formed between the clearance grooves 131 and the bottom plate 14. The area of ​​the plate surface plate 12 without flow channel grooves 121 is provided with a detection hole 122. The connecting post 15 is provided with a through hole. One end of the clearance channel is connected to the detection hole 122, and the other end is connected to the through hole. The temperature detection sensor 6 passes through the through hole and the clearance channel in sequence and extends into the detection hole 122. On the one hand, the inflection point of the flow channel 121 is rounded to avoid sharp corners in the flow channel 11, thereby preventing turbulence when the fluorinated liquid flows at the corner and improving the temperature control effect. On the other hand, the temperature sensor 6 changes position through the avoidance channel until it extends into the detection hole 122 of the plate 12, adjusting the position of the detection point of the temperature sensor 6 so that the detection point of the temperature sensor 6 can extend into the area of ​​the plate 12 where the flow channel 121 is not set. With the detection point of the temperature sensor 6 as close to the plate as possible, the flow channel 11 is evenly distributed, making the temperature control of the fluorinated liquid in the flow channel 11 more accurate.

[0057] Preferably, such as Figure 9 As shown, the flow channel 11 is circumferentially distributed from the inside out and flows in one direction. In other embodiments, the flow channel 11 can be rectangularly distributed or circumferentially distributed with opposing flow channels. After multiple simulation experiments, and by verifying three design schemes—rectangular flow channel 11, circumferentially distributed with opposing flow channels 11, and circumferentially distributed unidirectional flow channels 11 from the inside out—the design scheme of the flow channel 11 being circumferentially distributed from the inside out and flowing in one direction can accurately control the temperature to ±5℃, achieving optimal process performance.

[0058] In this embodiment, as Figure 7 As shown, the top plate 12, middle plate 13, bottom plate 14, and connecting post 15 are connected sequentially by brazing. The connecting post 15 is located in the middle position below the bottom plate 14, and the crown spring 16 is disposed at the bottom of the connecting post 15. In this embodiment, the cold plate 1 is subjected to hard anodizing treatment. After the hard anodizing treatment, the cold plate 1 becomes an insulating plate as a whole, and current can be conducted inside the cold plate 1. The temperature of the top plate 12 is controlled by the fluorinated liquid flowing in the flow channel 11, thereby achieving a low-temperature effect.

[0059] In this embodiment, the pipe 21 is a silicone flexible tube, which prevents the accumulation of charge due to friction when the insulating fluorinated liquid flows in the pipe 21, thus avoiding the phenomenon of the pipe 21 being blocked. This better ensures the safety of the fluorinated liquid and allows the current to act better on the surface of the cold plate 1.

[0060] Preferably, such as Figure 1 As shown, the cold plate 1 is set inside the cavity 8. The wafer processing equipment also includes a ceramic gas equalization ring 7, which is arranged around the cold plate 1 and connected to the side wall of the cold plate 1. The ceramic gas equalization ring 7 is provided with a plurality of evenly spaced gas equalization holes. By setting the ceramic gas equalization ring 7, impurities that have reacted above the cold plate 1 can be better drawn away below the cold plate 1 through the gas equalization holes. Moreover, the ceramic material and the grounded cavity 8 can also better isolate the electric field generated on the surface of the cold plate 1 from the inner wall of the cavity 8, ensuring that the generated electric field will not be conducted away through the cavity 8, thus playing the role of an energy-concentrating ring.

[0061] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A wafer processing apparatus characterized by comprising: include: Cold tray (1), which is used to hold wafers; Temperature control component (2) is connected to the cold plate (1) and is used to adjust the temperature of the cold plate (1); The radio frequency component (3) includes a radio frequency power matching unit (31) and a conductive rod (32). The first end of the conductive rod (32) is connected to the lower surface of the cold plate (1), and the second end of the conductive rod (32) is connected to the radio frequency power matching unit (31). The radio frequency component (3) is used to generate an electric field on the upper surface of the cold plate (1).

2. The wafer processing apparatus according to claim 1, wherein A crown spring (16) is provided below the cold plate (1), and a columnar part (321) is provided at the first end of the conductive rod (32), which can be inserted into the crown spring (16). The output end of the radio frequency power matching device (31) is provided with a first plate part (311), and the second end of the conductive rod (32) is provided with a second plate part (322). One of the first plate part (311) and the second plate part (322) is provided with a waist-shaped hole, and the other is provided with a threaded hole. The screw passes through the waist-shaped hole and is threaded to the threaded hole.

3. The wafer processing apparatus according to claim 1, wherein The radio frequency component (3) also includes a shield (4), and the conductive rod (32) is disposed inside the shield (4).

4. The wafer processing apparatus according to claim 3, wherein The shield (4) is composed of multiple shields spliced ​​together. The multiple shields are detachably connected, and beryllium copper strips (5) are provided between the connection parts of adjacent shields.

5. The wafer processing apparatus according to claim 3, wherein The distance between the inner wall of the shield (4) and the conductive rod (32) is 15mm-30mm.

6. The wafer processing apparatus according to claim 1, wherein The temperature control component (2) includes a temperature controller and a pipeline (21). A flow channel (11) is provided inside the cold plate (1). The temperature controller is connected to the flow channel (11) through the pipeline (21).

7. The wafer processing apparatus according to claim 6, wherein The temperature control component (2) also includes a temperature detection sensor (6), which is used to detect the temperature of the upper surface of the cold plate (1).

8. The wafer processing apparatus according to claim 7, wherein The cold plate (1) includes a plate surface plate (12), a middle plate (13), a bottom plate (14) and a connecting column (15) connected from top to bottom. The plate surface plate (12) has a uniformly arranged flow channel groove (121) on the side close to the middle plate (13). The inflection point of the flow channel groove (121) is provided with a rounded corner transition. The middle plate (13) is connected to the plate surface plate (12) so that the flow channel groove (121) and the middle plate (13) form the flow channel (11). The intermediate layer plate (13) is uniformly provided with clearance grooves (131) on the side near the bottom layer plate (14). The bottom layer plate (14) is connected to the intermediate layer plate (13) so that a clearance channel is formed between the clearance grooves (131) and the bottom layer plate (14). The area of ​​the disc layer plate (12) without the flow channel grooves (121) is provided with detection holes (122). The connecting column (15) is provided with through holes. One end of the clearance channel is connected to the detection hole (122), and the other end is connected to the through hole. The temperature detection sensor (6) passes through the through hole and the clearance channel in sequence and extends into the detection hole (122).

9. The wafer processing apparatus according to claim 6, wherein The flow channel (11) is distributed in a circular pattern from the inside out and flows in one direction.

10. The wafer processing apparatus according to any one of claims 1 to 9, characterized by The wafer processing equipment also includes a ceramic gas equalization ring (7), which is arranged around the cold plate (1) and connected to the side wall of the cold plate (1). The ceramic gas equalization ring (7) is provided with a plurality of uniformly spaced gas equalization holes.

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