A rectifier circuit based on silicon carbide material

By employing silicon carbide Schottky diodes and other components in the rectifier circuit design, the voltage overshoot and high-frequency harmonic problems caused by reverse recovery of silicon diodes are solved, achieving a low-EMI and high-efficiency power electronic system.

CN224459671UActive Publication Date: 2026-07-03ZHONGSHAN BAOLIJIN ELECTRONICS

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ZHONGSHAN BAOLIJIN ELECTRONICS
Filing Date
2025-07-28
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

In the prior art, the use of silicon diodes for high-voltage direct current rectification leads to voltage overshoot, oscillation and current surges during reverse recovery, generating high-frequency harmonics and affecting EMI.

Method used

By replacing traditional silicon diodes with silicon carbide Schottky diodes, and combining them with rectifier circuits composed of components such as varistors, fuses, thermistors and common-mode inductors, current surges and high-frequency harmonics are suppressed.

Benefits of technology

It effectively reduces current surges, suppresses high-frequency harmonics, reduces EMI impact, and improves the performance and efficiency of power electronic systems.

✦ Generated by Eureka AI based on patent content.

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Abstract

This utility model discloses a rectifier circuit based on silicon carbide material, including an AC circuit, a rectifier circuit, and a DC output circuit. The input terminal of the rectifier circuit is connected to the AC circuit, and the output terminal is connected to the DC output circuit. The diodes in the rectifier circuit are all silicon carbide Schottky diodes. Silicon carbide Schottky diodes have extremely short reverse recovery times, almost no minority carrier storage effect as in traditional silicon diodes, low peak reverse recovery current and small current change rate, and fast switching characteristics, which can reduce the generation of current surges and effectively suppress the generation of high-frequency harmonics, thereby reducing the impact on EMI.
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Description

Technical Field

[0001] This utility model relates to a power switching device, and more particularly to a rectifier circuit. Background Technology

[0002] In existing technologies, high-voltage direct current rectification mostly employs full-bridge rectification technology, which mainly utilizes diodes to form a full-bridge circuit. However, these diodes are all silicon rectifier diodes, and in actual use, due to the reverse recovery of the diodes, voltage overshoot, oscillation, or current surges are generated on the diodes. These surges generate high-frequency harmonics, which have a significant impact on EMI. Utility Model Content

[0003] In order to overcome the shortcomings of the prior art, this utility model provides a rectifier circuit based on silicon carbide material.

[0004] The technical solution adopted by this utility model to solve its technical problem is:

[0005] A rectifier circuit based on silicon carbide material includes an AC circuit, a rectifier circuit, and a DC output circuit. The input terminal of the rectifier circuit is connected to the AC circuit, and the output terminal is connected to the DC output circuit. The diodes in the rectifier circuit are all silicon carbide Schottky diodes.

[0006] As a further improvement of this utility model, the AC circuit includes a live wire L and a neutral wire N connected to the mains power supply. A varistor MOV1 is connected between the live wire L and the neutral wire N. A fuse F1 is connected in series with the live wire L. The live wire L is connected to the input terminal of the rectifier circuit through a thermistor NTC1.

[0007] As a further improvement of this utility model, the rectifier circuit includes a rectifier BD1 composed of four silicon carbide Schottky diodes. The first pin of the rectifier BD1 is connected to the neutral line N, the second pin of the rectifier BD1 is connected to the live line L, and the third and fourth pins of the rectifier BD1 are respectively connected to the DC output circuit.

[0008] As a further improvement of this utility model, the rectifier BD1 adopts the model number RABS210.

[0009] As a further improvement of this utility model, the DC output circuit includes a common-mode inductor LF1. The first pin of the common-mode inductor LF1 is connected to the third pin of the rectifier BD1, and the third pin of the common-mode inductor LF1 is connected to the fourth pin of the rectifier BD1. An electrolytic capacitor EC1 is connected between the first and third pins of the common-mode inductor LF1, and an electrolytic capacitor EC2 is connected between the second and fourth pins of the common-mode inductor LF1. A resistor RL1 and an I-shaped inductor L1 are connected in parallel between the first and second pins of the common-mode inductor LF1, and a resistor RL2 and an I-shaped inductor L2 are connected in parallel between the third and fourth pins of the common-mode inductor LF1.

[0010] The beneficial effects of this utility model are as follows: This utility model includes an AC circuit, a rectifier circuit, and a DC output circuit. The input terminal of the rectifier circuit is connected to the AC circuit, and the output terminal is connected to the DC output circuit. The diodes in the rectifier circuit are all silicon carbide Schottky diodes. Silicon carbide Schottky diodes have extremely short reverse recovery times, almost no minority carrier storage effect of traditional silicon diodes, low peak reverse recovery current and small current change rate, and fast switching characteristics, which can reduce the generation of current surges and effectively suppress the generation of high-frequency harmonics, thereby reducing the impact on EMI. Attached Figure Description

[0011] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0012] Figure 1 This is the circuit schematic diagram of this utility model. Detailed Implementation

[0013] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to specific embodiments and accompanying drawings. It should be noted that, unless otherwise specified, the embodiments and features of the present utility model can be combined with each other.

[0014] It should be understood that these descriptions are merely exemplary and not intended to limit the scope of this invention.

[0015] The following describes some embodiments of the present invention with reference to the accompanying drawings.

[0016] Reference Figure 1A rectifier circuit based on silicon carbide material includes an AC circuit, a rectifier circuit, and a DC output circuit. The input terminal of the rectifier circuit is connected to the AC circuit, and the output terminal is connected to the DC output circuit. All diodes in the rectifier circuit are silicon carbide Schottky diodes. Because silicon carbide Schottky diodes have extremely short reverse recovery times, almost no minority carrier storage effect as in traditional silicon diodes, low peak reverse recovery current, and small current change rate, and possess fast switching characteristics, they can reduce the generation of current surges, effectively suppress the generation of high-frequency harmonics, and thus reduce the impact on EMI.

[0017] The AC circuit includes a live wire L and a neutral wire N connected to the mains power. A varistor MOV1 is connected between the live wire L and the neutral wire N. A fuse F1 is connected in series with the live wire L. The live wire L is connected to the input terminal of the rectifier circuit through a thermistor NTC1. In this embodiment, the live wire L and the neutral wire N receive high-voltage AC power. When a surge occurs in the mains voltage (such as a voltage change caused by lightning strikes), the resistance of the varistor MOV1 drops rapidly, clamping the excessively high voltage and protecting the subsequent circuitry.

[0018] The rectifier circuit includes a rectifier BD1 composed of four silicon carbide Schottky diodes. Pin 1 of rectifier BD1 is connected to the neutral wire N, pin 2 is connected to the live wire L, and pins 3 and 4 are connected to the DC output circuit. In this embodiment, rectifier BD1 converts AC mains power into DC power. The four silicon carbide Schottky diodes are connected in a specific bridge circuit, ensuring that the output current direction remains consistent regardless of whether the input AC voltage is in the positive or negative half-cycle, thus achieving full-wave rectification.

[0019] In this embodiment, the rectifier BD1 uses the RABS210 model. The RABS210 consists of four semiconductor diodes made of silicon carbide. Silicon carbide diodes significantly improve the performance and efficiency of power electronic systems due to their advantages such as high-temperature operation capability, high efficiency, fast switching speed, high voltage withstand capability, low reverse leakage current, and low switching capacitance.

[0020] The DC output circuit includes a common-mode inductor LF1. Pin 1 of LF1 is connected to pin 3 of rectifier BD1, and pin 3 is connected to pin 4 of rectifier BD1. An electrolytic capacitor EC1 is connected between pins 1 and 3 of LF1. An electrolytic capacitor EC2 is connected between pins 2 and 4 of LF1. A resistor RL1 and an I-shaped inductor L1 are connected in parallel between pins 1 and 2 of LF1, and a resistor RL2 and an I-shaped inductor L2 are connected in parallel between pins 3 and 4 of LF1. In this embodiment, electrolytic capacitors EC1 and EC2 filter the rectified DC voltage, smoothing the voltage waveform and reducing voltage ripple. The common-mode inductor LF1 is used to suppress common-mode interference, while the I-shaped inductors L1 and L2, and resistors RL1 and RL2 further filter and stabilize the voltage, making the output DC voltage more stable.

[0021] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A rectifier circuit based on silicon carbide material, characterized in that... It includes an AC circuit, a rectifier circuit, and a DC output circuit. The input terminal of the rectifier circuit is connected to the AC circuit, and the output terminal is connected to the DC output circuit. The diodes in the rectifier circuit are all silicon carbide Schottky diodes.

2. The rectifier circuit based on silicon carbide material according to claim 1, characterized in that... The AC circuit includes a live wire L and a neutral wire N connected to the mains power supply. A varistor MOV1 is connected between the live wire L and the neutral wire N. A fuse F1 is connected in series with the live wire L. The live wire L is connected to the input terminal of the rectifier circuit through a thermistor NTC1.

3. The rectifier circuit based on silicon carbide material according to claim 2, characterized in that... The rectifier circuit includes a rectifier BD1 composed of four silicon carbide Schottky diodes. The first pin of the rectifier BD1 is connected to the neutral line N, the second pin of the rectifier BD1 is connected to the live line L, and the third and fourth pins of the rectifier BD1 are respectively connected to the DC output circuit.

4. The rectifier circuit based on silicon carbide material according to claim 3, characterized in that... The rectifier BD1 is model RABS210.

5. The rectifier circuit based on silicon carbide material according to claim 3, characterized in that... The DC output circuit includes a common-mode inductor LF1. Pin 1 of the common-mode inductor LF1 is connected to pin 3 of the rectifier BD1, and pin 3 of the common-mode inductor LF1 is connected to pin 4 of the rectifier BD1. An electrolytic capacitor EC1 is connected between pin 1 and pin 3 of the common-mode inductor LF1. An electrolytic capacitor EC2 is connected between pin 2 and pin 4 of the common-mode inductor LF1. A resistor RL1 and an I-shaped inductor L1 are connected in parallel between pin 1 and pin 2 of the common-mode inductor LF1, and a resistor RL2 and an I-shaped inductor L2 are connected in parallel between pin 3 and pin 4 of the common-mode inductor LF1.