Wafer processing apparatus
Patent Information
- Application Number
- CN202521298991.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-24
- Publication Date
- 2026-07-03
- Estimated Expiration
- 2035-06-24
Smart Images
Figure CN224460488U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor process technology, and more particularly to a wafer processing apparatus. Background Technology
[0002] In semiconductor thin-film deposition processes, wafers are placed on heating pads within a process chamber. Once the heating pads reach the desired process position, they heat the wafer. As the temperature rises, the wafer's thermal expansion causes warping and deformation at its edges, affecting the uniformity and thickness parameters of the deposited film. Furthermore, the injection of large volumes of process gas into the process chamber during the process exacerbates the wafer's tendency to shift on the heating pads, causing it to slide. This not only leads to deviations in process parameters but can also cause wafer detachment or breakage during vacuum robotic wafer removal due to misalignment.
[0003] Therefore, how to provide a processing device that can avoid wafer edge warping and displacement during wafer processing is a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content
[0004] This application provides a wafer processing apparatus in which a clamping mechanism can press against the edge of the wafer when the heating plate moves the wafer to the process position, so as to avoid warping deformation of the wafer edge caused by thermal expansion and to avoid displacement tendency caused by the impact of process gas on the wafer.
[0005] To address the technical problems existing in the prior art, the following technical solution is adopted:
[0006] A wafer processing apparatus includes a heating plate located within a process chamber, the heating plate being capable of moving the wafer between a non-process position and a process position, the non-process position being located above the process position, and the apparatus further includes:
[0007] The clamping mechanism includes a clamping block structure disposed on the inner wall of the process chamber. The clamping block structure includes a pressing part, which abuts against the top edge of the wafer when the heating plate reaches the process position.
[0008] Preferably, the clamping mechanism further includes:
[0009] A rotating structure located on the inner wall of the process chamber includes a rotating shaft that passes through one end of the pressing block structure away from the pressing part, and the pressing part can swing about the axis of the rotating shaft.
[0010] Preferably, the rotating structure further includes a fixing plate, one end of which is connected to the inner wall of the process chamber, and the other end is provided with the rotating shaft, the axis of which is perpendicular to the moving direction of the heating plate.
[0011] Preferably, the pressing part is spherically shaped, and during the movement of the heating plate from the non-process position to the process position, the pressing part slides from the non-contact area between the heating plate and the wafer to the top edge of the wafer.
[0012] Preferably, the pressing block structure further includes a counterweight with a preset weight, the counterweight and the pressing part being disposed at opposite ends of the pressing block structure.
[0013] Preferably, there are multiple clamping mechanisms, and all the clamping mechanisms are arranged at intervals along the circumference of the process chamber on the inner wall of the process chamber.
[0014] Preferably, on the orthographic projection surface of the process chamber, the angle between the lines connecting any two adjacent rotating structures and the center point of the heating plate is a preset value.
[0015] Preferably, the preset value is any one of 30°, 60°, 90°, and 120°.
[0016] Preferably, the device further includes a lifting mechanism connected to the heating plate, used to drive the heating plate to reciprocate along the depth direction of the process chamber.
[0017] Preferably, the bottom wall of the process chamber is provided with an opening, and the device further includes a connecting seat and a connecting member. The connecting seat is installed on the lifting mechanism, and one end of the connecting member is connected to the connecting seat, while the other end extends through the opening into the process chamber and is connected to the bottom surface of the heating plate.
[0018] Preferably, the device further includes a sealing element connected between the opening and the connecting seat and fitted onto the connecting member.
[0019] According to the specific embodiments provided in this application, the following technical effects are disclosed:
[0020] This application provides a wafer processing apparatus, including a heating plate located within a process chamber. The heating plate can move the wafer between a non-process position and a process position, with the non-process position located above the process position. The apparatus further includes a clamping mechanism, comprising a pressure block structure disposed on the inner wall of the process chamber. The pressure block structure includes a pressing part, which abuts against the top edge of the wafer when the heating plate reaches the process position. In this embodiment, when the heating plate is in the process position, the pressing part abuts against the wafer edge, applying a vertically downward pressure to the wafer edge. This not only suppresses warping deformation of the wafer edge caused by thermal expansion but also counteracts the displacement tendency caused by the impact of process gases on the wafer through the frictional resistance formed by edge contact. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is an overall cross-sectional view of the device provided in the embodiments of this application when the heating plate is in a non-processing position;
[0023] Figure 2 This is an overall cross-sectional view of the device provided in the embodiments of this application when the heating plate is in the processing position;
[0024] Figure 3 This is a schematic diagram of the orthographic projection of the process chamber when the heating plate is in a non-processing position, as provided in the embodiments of this application.
[0025] Figure 4 This is a schematic diagram of the orthographic projection of the process chamber when the heating plate is in the processing position, as provided in the embodiments of this application.
[0026] Figure label:
[0027] 10. Process chamber; 20. Heating plate; 30. Wafer; 40. Pressing block structure; 50. Rotating structure; 60. Lifting mechanism; 70. Connecting seat; 80. Connecting part; 90. Sealing part; 100. Opening; 400. Pressing part; 410. Counterweight part; 500. Fixing plate; 510. Rotating shaft. Detailed Implementation
[0028] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0029] As described in the background section, in semiconductor thin film deposition processes, wafers are placed on heating pads within a process chamber. Once the heating pads reach the desired process position, they heat the wafer. As the temperature rises, the wafer's thermal expansion causes warping and deformation at the wafer edges, affecting the uniformity and thickness parameters of the deposited thin film. Furthermore, during the process, a large flow rate of process gas is injected into the process chamber. The shear force generated by this gas flow exacerbates the wafer's tendency to shift on the heating pad, causing it to slide. This not only leads to deviations in process parameters but also can cause wafer detachment or breakage during vacuum robotic wafer removal due to misalignment.
[0030] Based on this, this application provides a wafer processing apparatus, which aims to solve the problems of warping and displacement of wafers during processing in the prior art.
[0031] refer to Figure 1 and Figure 2 The wafer processing apparatus mainly includes: a process chamber 10, into which a large flow of process gas can be injected for processing wafers 30; a heating plate 20, located inside the process chamber 10, which can move up and down along the depth direction of the process chamber 10; the heating plate 20 has a non-process position and a process position within the process chamber 10; at the non-process position, a vacuum manipulator (not shown in the figure) can be used to place or remove wafers 30 onto the top surface of the heating plate 20; at the process position, the heating plate 20 heats the wafers 30; a lifting mechanism 60, connected to the heating plate 20, used to drive the heating plate 20 to move up and down; and a clamping mechanism, consisting of a rotating structure 50 and a pressing block structure 40, which is rotatably connected to the inner wall of the process chamber 10; when the heating plate 20 moves to the process position, the clamping mechanism clamps the edge of the wafers 30 to avoid warping and displacement of the wafers 30 during processing.
[0032] The wafer processing apparatus of this application will be analyzed in detail below with reference to the accompanying drawings. Figure 1 and Figure 2 A wafer processing apparatus suitable for thin film deposition and other process scenarios includes a heating plate 20 located in a process chamber 10. The heating plate 20 can move a wafer 30 between a non-process position and a process position, and heat the wafer 30 at the process position. The heating plate 20 is disc-shaped and its radius is larger than that of the wafer 30. The non-process position is located above the process position. The apparatus includes a clamping mechanism, including a pressing block structure 40 disposed on the inner wall of the process chamber 10. The pressing block structure 40 includes a pressing part 400. When the heating plate 20 reaches the process position, the pressing part 400 abuts against the top edge of the wafer 30.
[0033] In one specific embodiment, the pressure block structure 40 is rotatably connected to the inner wall of the process chamber 10. When the heating plate 20 is in a non-process position, the pressing part 400 abuts against the top surface of the heating plate 20 without contacting the wafer 30. When the heating plate 20 moves from the non-process position to the process position, the pressure block structure 40 moves synchronously with the heating plate 20, so that the pressing part 400 moves from the heating plate 20 toward the wafer 30 to abut against the edge of the top surface of the wafer 30 without contacting the heating plate 20.
[0034] The heating plate 20 can be positioned in the central area of the process chamber 10 to ensure that the heating plate 20 does not touch the inner wall of the process chamber 10 when it moves up and down or when the vacuum robot picks up and places the wafer 30. The heating plate 20 is circular, with a radius larger than that of the wafer 30, to support the wafer 30. Generally, the wafer 30 is placed in the central area of the heating plate 20, concentrically positioned with it. In some heating plates 20, the top surface has a recessed structure that matches the shape of the wafer 30. The wafer 30 is placed in the recessed structure to fix it in place. The thickness of the wafer 30 is greater than the depth of the recessed structure.
[0035] like Figure 1 As shown, the heating plate 20 is located in a non-process position, such as... Figure 2 As shown, the heating plate 20 is located in the process position. The pressure block structure 40 is rotatably connected to the inner wall of the process chamber 10, as shown. Figure 3 As shown, when the heating plate 20 is in a non-process position, the pressing part 400 completely abuts against the area on the top surface of the heating plate 20 that does not overlap with the wafer 30, i.e., the non-contact area between the heating plate 20 and the wafer 30. At this time, the vacuum robot is not affected by the pressing block structure 40 and can freely remove the processed wafer 30 or place the wafer 30 to be processed; Figure 4 As shown, when the heating plate 20 descends from the non-process position to the process position, since the pressure block structure 40 is rotatable and the pressing part 400 abuts against the top surface of the heating plate 20 at the non-process position, the pressure block structure 40 naturally descends synchronously with the heating plate 20 under the action of gravity as the heating plate 20 descends. During the descent, the pressing part 400 moves from the top surface of the heating plate 20 toward the wafer 30. When the heating plate 20 reaches the process position, the pressing part 400 completely abuts against the edge of the wafer 30 without contacting the heating plate 20. The pressing part 400 applies a vertical downward pressure to the edge of the wafer 30, which can suppress the warping deformation of the edge of the wafer 30 caused by thermal expansion, and can also offset the displacement tendency caused by the impact of the process gas on the wafer 30 through the frictional resistance formed by the edge contact.
[0036] In a specific embodiment, such as Figure 1 and Figure 2As shown, after the processing of wafer 30 is completed, the heating plate 20 moves wafer 30 from the process position to the non-process position. The pressing block structure 40 moves upward simultaneously, and the pressing part 400 moves from the edge of wafer 30 toward the heating plate 20 and abuts against the top surface of the heating plate 20 without contacting wafer 30. Then, the vacuum robot takes out the processed wafer 30.
[0037] Preferably, refer to Figures 1 to 4 The pressing mechanism further includes a rotating structure 50 disposed on the inner wall of the process chamber 10, including a rotating shaft 510. The rotating shaft 510 is connected to the end of the pressing block structure 40 away from the pressing part 400, and the pressing part 400 can swing around the axis of the rotating shaft 510. The rotating structure 50 also includes a fixing plate 500, one end of which is connected to the inner wall of the process chamber 10, and the other end is provided with the rotating shaft 510. The axial direction of the rotating shaft 510 is perpendicular to the moving direction of the heating plate 20.
[0038] Among them, such as Figure 1 and Figure 2 As shown, the rotating structure 50 enables the pressing structure 40 to rotate. When the heating plate 20 moves from the non-process position to the process position, the pressing structure 40 rotates under the action of gravity via the rotating shaft 510, causing the pressing part 400 to move circumferentially along the rotating shaft 510. When the heating plate 20 reaches the process position, the pressing part 400 rotates to the edge of the wafer 30 and presses the edge of the wafer 30. The rotating shaft 510 is a shaft, the heating plate 20 is disc-shaped, and the axis of rotation of the rotating shaft 510 is perpendicular to the central axis of the heating plate 20.
[0039] It should be noted that there are no restrictions on the installation height of the rotating structure 50 on the inner wall of the process chamber 10, as well as the length and shape of the pressing structure 40. It is only necessary to ensure that the pressing structure 40 can abut against the top surface of the heating plate 20 when the heating plate 20 is in a non-process position without contacting the wafer 30, and press the edge of the wafer 30 without contacting the heating plate 20 when the heating plate 20 is in a process position.
[0040] Preferably, the pressing part 400 is spherically shaped, and during the movement of the heating plate 20 from the non-process position to the process position, the pressing part 400 slides from the non-contact area between the heating plate 20 and the wafer 30 to the top edge of the wafer 30.
[0041] The spherical structure facilitates the sliding of the pressing part 400 between the top surface of the heating plate 20 and the top surface of the wafer 30, ensuring a smooth transition throughout the movement and preventing scratches caused by direct dragging between the top surfaces of the heating plate 20 and the wafer 30. Simultaneously, the annular structure provides a uniform force distribution, applying even pressure when the pressing part 400 abuts against the edge of the wafer 30, achieving a good clamping effect.
[0042] Preferably, the pressing block structure 40 further includes a counterweight 410 with a preset weight, the counterweight 410 and the pressing part 400 being disposed at opposite ends of the pressing block structure 40.
[0043] The counterweight 410 is used to balance the weight of the pressing part 400. Its weight value can be determined according to the weight value of the pressing part 400 and the actual needs, so as to avoid unnecessary shaking or tilting of the pressing block structure 40 due to center offset during movement, and increase the balance stability of the pressing block structure 40.
[0044] In a specific embodiment, such as Figure 1 and Figure 2 As shown, the counterweight 410 is hook-shaped; with the point through which the rotating shaft 510 on the pressure block structure 40 passes as the reference point, the counterweight 410 is located on one side of the reference point, and the pressing part 400 is located on the other side of the reference point. The distance from the counterweight 410 to the reference point is less than the distance from the pressing part 400 to the reference point, so that the center of gravity of the pressure block structure 40 is always located near the pressing part 400, so that the pressing part 400 can press on the heating plate 20 or the wafer 30 under the action of gravity.
[0045] In an optional embodiment, the clamping structure 40 may be made of a ceramic material to avoid contamination of the wafer 30 when clamping it.
[0046] Preferably, refer to Figure 3 and Figure 4 There are multiple clamping mechanisms, and all clamping mechanisms are arranged at intervals along the circumference of the process chamber 10 on the inner wall of the process chamber 10.
[0047] Each clamping mechanism is responsible for clamping different parts of the edge of the wafer 30, thereby providing uniform pressure. All clamping mechanisms are arranged around the central axis of the heating plate 20 to adapt to the shape of the heating plate 20 and the wafer 30.
[0048] Preferably, refer to Figure 3 and Figure 4 On the orthographic projection surface of the process chamber 10, the included angle between the lines connecting any two adjacent rotating structures 50 and the center point of the heating plate 20 is a preset value.
[0049] Each rotating structure 50 is connected to the pressure block structure 40. When the wafer 30 expands due to heat, the multiple uniformly distributed clamping mechanisms can better adapt to the warping deformation of the wafer 30, so as to maintain the uniformity of the clamping force and avoid damage to the wafer 30 caused by local stress concentration. At the same time, the uniform pressure distribution helps to offset the impact of process gas and prevent the wafer 30 from sliding.
[0050] In one specific embodiment, the preset value is any one of 30°, 60°, 90°, and 120°.
[0051] Among them, such as Figure 3 and Figure 4 As shown, when the number of clamping mechanisms is 12, the angle between the lines connecting any two adjacent rotating structures 50 and the center point of the heating plate 20 is 30°. When the number of clamping mechanisms is 6, the angle between the lines connecting any two adjacent rotating structures 50 and the center point of the heating plate 20 is 60°. When the number of clamping mechanisms is 4, the angle between the lines connecting any two adjacent rotating structures 50 and the center point of the heating plate 20 is 90°. When the number of clamping mechanisms is 3, the angle between the lines connecting any two adjacent rotating structures 50 and the center point of the heating plate 20 is 120°.
[0052] Preferably, refer to Figure 1 and Figure 2 The device also includes a lifting mechanism 60 connected to the heating plate 20, which drives the heating plate 20 to reciprocate along the depth direction of the process chamber 10.
[0053] In one specific embodiment, the lifting mechanism 60 may be an electric cylinder to drive the heating plate 20 to move precisely between the non-process position and the process position.
[0054] Preferably, the bottom wall of the process chamber 10 is provided with an opening 100, and the device also includes a connecting seat 70 and a connecting member 80. The connecting seat 70 is installed on the lifting mechanism 60, and one end of the connecting member 80 is connected to the connecting seat 70, and the other end extends through the opening 100 into the process chamber 10 and is connected to the bottom surface of the heating plate 20.
[0055] In one specific embodiment, the side end of the connecting seat 70 is connected to the drive block of the electric cylinder. As the drive block moves up and down, the top end of the connecting seat 70 is connected to the connector 80. The end of the connector 80 away from the connecting seat 70 is connected to the bottom surface of the heating plate 20. The connector 80 is set perpendicular to the heating plate 20.
[0056] Preferably, the device further includes a sealing member 90 connected between the opening 100 and the connecting seat 70 and sleeved on the connecting member 80.
[0057] In one specific embodiment, the seal 90 is a vacuum bellows used to maintain the airtightness within the process chamber 10.
[0058] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0059] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0060] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.
Claims
1. A wafer processing apparatus comprising a heating plate (20) located within a process chamber (10), the heating plate (20) being operable to move a wafer (30) between a non-process position and a process position, the non-process position being located above the process position, characterised in that, The device includes: The clamping mechanism includes a clamping block structure (40) disposed on the inner wall of the process chamber (10). The clamping block structure (40) includes a pressing part (400). When the heating plate (20) reaches the process position, the pressing part (400) abuts against the top edge of the wafer (30).
2. The wafer processing apparatus according to claim 1, wherein The clamping mechanism further includes: The rotating structure (50) provided on the inner wall of the process chamber (10) includes a rotating shaft (510), which is connected to one end of the pressing block structure (40) away from the pressing part (400), and the pressing part (400) can swing about the axis of the rotating shaft (510).
3. The wafer processing apparatus according to claim 2, wherein The rotating structure (50) also includes a fixing plate (500), one end of which is connected to the inner wall of the process chamber (10), and the other end is provided with the rotating shaft (510), the axis of which is perpendicular to the moving direction of the heating plate (20).
4. The wafer processing apparatus according to claim 2, wherein The pressing part (400) is spherically shaped. During the movement of the heating plate (20) from the non-process position to the process position, the pressing part (400) slides from the non-contact area between the heating plate (20) and the wafer (30) to the top edge of the wafer (30).
5. The wafer processing apparatus of claim 2, wherein The pressing block structure (40) also includes a counterweight (410) with a preset weight, the counterweight (410) and the pressing part (400) being disposed at opposite ends of the pressing block structure (40).
6. The wafer processing apparatus according to any one of claims 2 to 5, wherein The number of clamping mechanisms is multiple, and all clamping mechanisms are arranged at intervals along the circumference of the process chamber (10) on the inner wall of the process chamber (10).
7. The wafer processing apparatus according to claim 6, wherein On the orthographic projection plane of the process chamber (10), the included angle between the lines connecting any two adjacent rotating structures (50) and the center point of the heating plate (20) is a preset value.
8. The wafer processing apparatus according to claim 1, characterized in that, The device also includes a lifting mechanism (60) connected to the heating plate (20) for driving the heating plate (20) to reciprocate along the depth direction of the process chamber (10).
9. The wafer processing apparatus according to claim 8, wherein The bottom wall of the process chamber (10) is provided with an opening (100). The device also includes a connecting seat (70) and a connecting piece (80). The connecting seat (70) is installed on the lifting mechanism (60). One end of the connecting piece (80) is connected to the connecting seat (70), and the other end passes through the opening (100) and extends into the process chamber (10) to connect to the bottom surface of the heating plate (20).
10. The wafer processing apparatus of claim 9, wherein The device further includes a sealing element (90) connected between the opening (100) and the connecting seat (70) and fitted onto the connecting member (80).