Wafer chemical mechanical polishing apparatus
By installing heating components and temperature sensors at the polishing head, precise control of wafer temperature is achieved, solving the temperature control problem of wafer chemical mechanical polishing equipment and improving process efficiency and production volume.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- CHENGDU HIGH-TECH JIN SCI&TECH CO LTD
- Filing Date
- 2025-07-04
- Publication Date
- 2026-07-10
AI Technical Summary
Existing wafer chemical mechanical polishing equipment has difficulty effectively controlling wafer temperature, resulting in poor process consistency, increased process time, and reduced production volume.
A heating element is installed at the polishing head, and the wafer temperature is detected by a temperature sensor. The power of the heating element is adjusted by a control device to control the wafer temperature, thereby achieving precise control of the wafer temperature.
It improves the efficiency of the wafer chemical mechanical polishing process, shortens processing time, and increases production volume.
Smart Images
Figure CN224476027U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of wafer polishing technology, and in particular to a wafer chemical mechanical polishing device. Background Technology
[0002] This section provides only background information relevant to this disclosure and is not necessarily prior art.
[0003] The surface temperature of a wafer varies due to multiple factors, including the rotation of the polishing pad and polishing head, the spray point of the polishing slurry, and the hardness of the polishing pad. It is difficult to maintain a constant temperature, which affects the consistency of the process, increases the overall process time, and reduces production volume. Utility Model Content
[0004] The purpose of this invention is to at least solve the technical problem of difficulty in controlling wafer temperature in existing wafer chemical mechanical polishing equipment. This purpose is achieved through the following technical solution:
[0005] This utility model proposes a wafer chemical mechanical polishing device, comprising:
[0006] Polishing table;
[0007] A polishing pad is provided on the polishing table;
[0008] A spray pipe for spraying polishing liquid onto the polishing pad;
[0009] A polishing head is used to carry a wafer on the polishing pad for chemical mechanical polishing;
[0010] A heating assembly is disposed on the polishing head and is thermally connected to the polishing head;
[0011] A temperature sensor is used to detect the temperature of the wafer;
[0012] The control device is electrically connected to the temperature sensor and the heating component, respectively.
[0013] The wafer chemical mechanical polishing equipment proposed in this utility model sets a heating component at the polishing head, so that the wafer on the polishing head can be thermally connected to the heating component. The temperature of the wafer is detected by a temperature sensor, and the control device controls the heating component to control the temperature of the wafer according to the temperature signal of the temperature sensor, thereby achieving temperature control of the wafer and improving the efficiency of the wafer chemical mechanical polishing process.
[0014] In addition, the wafer chemical mechanical polishing equipment according to this utility model may also have the following additional technical features:
[0015] In some embodiments of this invention, the heating component is disposed inside the polishing head.
[0016] In some embodiments of this utility model, the polishing head includes a rotating part for carrying the wafer to rotate, the rotation axis of the rotating part is perpendicular to the polishing pad, and the heating component is disposed inside the rotating part.
[0017] In some embodiments of this utility model, the heating component extends circumferentially along the rotating part and is arranged around the rotation axis of the rotating part.
[0018] In some embodiments of this invention, the heating component includes an electric heating wire.
[0019] In some embodiments of the present invention, the control device is electrically connected to a plurality of the electric heating wires and is configured to selectively control the power of at least one of the electric heating wires.
[0020] In some embodiments of this utility model, there are multiple electric heating wires, which extend in a ring along the circumference of the rotating part, and are nested sequentially along the radial direction of the rotating part.
[0021] In some embodiments of this utility model, the temperature sensor is an infrared temperature sensor, which is disposed on the polishing head, and the detection direction of the infrared temperature sensor is oriented towards the wafer.
[0022] In some embodiments of this utility model, the plurality of electric heating wires are coaxially arranged with the rotating part.
[0023] In some embodiments of this utility model, along the axial direction of the rotating part, the plurality of electric heating wires are arranged closer to the end of the rotating part away from the polishing pad than the end of the rotating part facing the polishing pad. Attached Figure Description
[0024] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:
[0025] Figure 1 A schematic diagram of the structure of a wafer chemical mechanical polishing apparatus according to an embodiment of the present invention is shown.
[0026] Figure 2A schematic diagram of the rotating part and heating assembly according to an embodiment of the present invention is shown.
[0027] Figure 3 A schematic cross-sectional view of the rotating part according to an embodiment of the present invention is shown.
[0028] The attached figures are labeled as follows:
[0029] 100. Wafer chemical mechanical polishing equipment;
[0030] 10. Polishing table;
[0031] 20. Polishing pad;
[0032] 30. Polishing head; 31. Rotating part;
[0033] 40. Sprinkler pipe;
[0034] 50. Heating assembly; 51. Electric heating wire;
[0035] 60. Wafer;
[0036] The X-axis is the axial direction of the rotating part. Detailed Implementation
[0037] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
[0038] It should be understood that the terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “described” as used herein may also include the plural forms. The terms “comprising,” “including,” “containing,” and “having” are inclusive and therefore indicate the presence of the stated features, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components, and / or combinations thereof. The method steps, processes, and operations described herein are not construed as requiring them to be performed in a particular order described or illustrated unless the order of performance is explicitly indicated. It should also be understood that additional or alternative steps may be used.
[0039] Although terms such as first, second, third, etc., may be used in this document to describe multiple elements, components, regions, layers, and / or segments, these elements, components, regions, layers, and / or segments should not be limited by these terms. These terms may be used only to distinguish one element, component, region, layer, or segment from another. Unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms used herein do not imply order or sequence. Therefore, the first element, component, region, layer, or segment discussed below may be referred to as the second element, component, region, layer, or segment without departing from the teachings of the exemplary embodiments.
[0040] For ease of description, spatial relative terms may be used in the text to describe the relationship of one element or feature relative to another element or feature, as shown in the figure. These relative terms include, for example, "inside," "outside," "middle," "outer," "below," "below," "above," "over," etc. Such spatial relative terms are intended to include different orientations of the device in use or operation, other than those depicted in the figure. For example, if the device in the figure is flipped, an element described as "below other elements or features" or "below other elements or features" would subsequently be oriented as "above other elements or features" or "above other elements or features." Therefore, the example term "below" can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions), and the spatial relative descriptors used in the text will be interpreted accordingly.
[0041] like Figures 1 to 3 As shown, this utility model proposes a wafer chemical mechanical polishing (CMP) apparatus 100, including a polishing table 10, a polishing pad 20, a spray pipe 40, a polishing head 30, a heating assembly 50, a temperature sensor, and a control device. The polishing pad 20 is disposed on the polishing table 10; the spray pipe 40 is used to spray polishing fluid onto the polishing pad 20; the polishing head 30 is used to carry the wafer 60 on the polishing pad 20 for CMP polishing; the heating assembly 50 is disposed on the polishing head 30 and is thermally connected to the polishing head 30; the temperature sensor is used to detect the temperature of the wafer 60; and the control device is electrically connected to the temperature sensor and the heating assembly 50 respectively.
[0042] As can be seen, the wafer chemical mechanical polishing equipment 100 proposed in this utility model provides a heating component 50 at the polishing head 30, enabling the wafer 60 on the polishing head 30 to be thermally connected to the heating component 50. Furthermore, the temperature of the wafer 60 is detected by a temperature sensor, and the control device controls the heating component 50 to control the temperature of the wafer 60 based on the temperature signal from the temperature sensor, thereby achieving temperature control of the wafer 60 and improving the efficiency of the chemical mechanical polishing process of the wafer 60.
[0043] For example, the polishing table 10 is frustum-shaped, with a polishing pad 20 at its top. The polishing head 30 typically has a vacuum adsorption device to adsorb the wafer 60, preventing displacement of the wafer 60 during polishing. Simultaneously, it applies downward pressure to the polishing pad 20 and rotates the wafer 60 relative to the polishing pad 20 to perform physical polishing. At the same time, a polishing slurry spraying device is located above the polishing pad 20. The polishing slurry is sprayed onto the polishing pad 20 and then comes into contact with the wafer 60 to achieve chemical polishing. The polishing slurry is a water-soluble polishing agent composed of solid particle abrasives, surfactants, stabilizers, oxidants, etc. Through a series of chemical reactions with the material surface, a surface film is formed, which is then removed by the abrasive particles in the composition, achieving the purpose of chemical polishing of the wafer. The heating component 50 can be a heating tube disposed inside or outside the polishing head 30. For example, a spiral or concentric heating tube can be disposed inside the polishing head 30, with a high-temperature fluid flowing inside to heat the polishing head 30, indirectly affecting the temperature of the wafer 60 carried by the polishing head 30. Alternatively, the heating component 50 can be an electric heating wire 51 disposed inside the polishing head 30, heating the internal temperature of the polishing head 30 through electric heating, thereby increasing the temperature of the wafer 60 carried by the polishing head 30. The temperature sensor can be an infrared temperature sensor or a laser temperature sensor. It utilizes the infrared energy radiated by the wafer 60, converts the infrared energy into an electrical signal through a photoelectric conversion element, and then calculates the temperature of the wafer 60 through a signal processing circuit. Alternatively, it can emit a laser beam and calculate the temperature of the wafer 60 by analyzing the changes in the laser signal reflected back from the wafer 60. The control device determines whether the temperature of wafer 60 meets the process requirements based on the temperature signal from the temperature sensor, and then controls the heating device to adjust the temperature of wafer 60 so that the temperature of wafer 60 meets the temperature requirements of the chemical mechanical polishing process, thereby shortening the processing time of the wafer chemical mechanical polishing process and increasing the yield of wafer 60.
[0044] In some embodiments of this invention, the heating component 50 is disposed inside the polishing head 30.
[0045] It is evident that by setting a heating component 50 inside the polishing head 30, the heat from the heating component 50 can directly affect the polishing head 30, thereby affecting the temperature of the wafer 60 carried by the polishing head 30, and regulating the temperature of the wafer 60, thus helping the wafer 60 maintain a suitable temperature for the chemical mechanical polishing process.
[0046] For example, the heating component 50 can be a heating tube disposed inside the polishing head 30. By distributing the heating tube inside the polishing head 30, hot water or hot air can circulate within the heating tube. The medium within the heating tube heats the polishing head 30, thereby heating the wafer 60 carried by the polishing head 30. Specifically, the heating tube can be separately disposed from the polishing head 30 and embedded in the outer shell of the polishing head 30, or the heating tube can be integrally formed onto the outer shell of the polishing head 30, achieving the same effect of heating the wafer 60. Alternatively, a heating wire can be used to heat the polishing head 30, thereby indirectly heating the wafer 60 carried by the polishing head 30.
[0047] In some embodiments of this utility model, the polishing head 30 includes a rotating part 31, which is used to carry the wafer 60 to rotate. The rotation axis of the rotating part 31 is perpendicular to the polishing pad 20, and the heating component 50 is disposed inside the rotating part 31.
[0048] As can be seen, the rotating part 31 drives the wafer 60 to rotate and applies pressure perpendicularly to the polishing pad 20 to perform physical grinding and polishing on the wafer 60. At the same time, the heating component 50 is located inside the rotating part 31, so that the heating component 50 can heat the rotating part 31. Meanwhile, the rotating part 31 transfers heat to the wafer 60 it carries, thereby regulating the temperature of the wafer 60 to better meet the requirements of the wafer chemical mechanical polishing process.
[0049] For example, the rotating part 31 can be a disk-shaped structure. The rotating part 31 can carry the wafer 60 by vacuum adsorption. The rotating part 31 can be connected to a motor through a transmission mechanism. The motor drives the rotating part 31 to rotate. The heating component 50 can be a heating tube or an electric heating wire 51 disposed in the rotating part 31. The rotating part 31 is heated by the heat medium flowing through it, thereby heating the wafer 60. Alternatively, the rotating part 31 can be heated by the heat released by the electric heating wire 51, thereby heating the wafer 60.
[0050] In some embodiments of this utility model, the heating component 50 extends circumferentially along the rotating part 31 and is arranged around the rotation axis of the rotating part 31.
[0051] As can be seen, since the rotating part 31 is a rotating body structure, the heating component 50 can be set to extend along the circumference of the rotating part 31 and be arranged around the rotation axis of the rotating part 31, so that the heating component 50 is in the shape of a ring to match the structure of the rotating part 31, thereby achieving heating of the wafer 60 at multiple positions in the circumference and improving the uniformity of heating of the wafer 60.
[0052] For example, the heating component 50 may be a ring-shaped heating tube or an electric heating wire 51, and multiple ring-shaped heating tubes or electric heating wires 51 may be arranged in concentric circles to further improve the uniformity of heating the wafer 60.
[0053] In some embodiments of this utility model, the heating component 50 includes an electric heating wire 51.
[0054] As can be seen, a heating wire can be set inside the polishing head 30. The heating wire can be a single heating wire that extends in a spiral or S-shape, so that the heating wire is evenly distributed inside the polishing head 30, thereby uniformly heating all parts of the wafer 60.
[0055] For example, multiple heating wires 51 may be provided, such as multiple heating wires arranged side by side or radially, so that the heating wires 51 can uniformly heat the wafer 60.
[0056] In some embodiments of the present invention, the control device is electrically connected to a plurality of electric heating wires 51 and is configured to selectively control the power of at least one electric heating wire 51.
[0057] As can be seen, by controlling the power of one or more electric heating wires 51 through the control device, the heating power of the heating component 50 on the rotating part 31 and the wafer 60 can be adjusted, thereby improving the flexibility of wafer 60 temperature adjustment.
[0058] For example, when the temperature of wafer 60 is within a first range below the preset process temperature, a small portion of the heating wires 51 can be activated by the control device to save energy and prevent the temperature of wafer 60 from changing too rapidly. When the temperature of wafer 60 is greater than the first range below the preset process temperature, most or even all of the heating wires 51 can be activated by the control device to ensure that the temperature of wafer 60 reaches the preset process temperature as quickly as possible, thereby preventing wafer 60 processing failure.
[0059] In some embodiments of this utility model, there are multiple electric heating wires 51, which extend in a ring along the circumference of the rotating part 31 and are nested sequentially along the radial direction of the rotating part 31.
[0060] As can be seen, by setting multiple ring-shaped electric heating wires 51, and the multiple electric heating wires 51 are nested in a concentric circle, the electric heating wires 51 can heat various areas of the wafer 60, thereby improving the heating uniformity of the wafer 60.
[0061] For example, the heating wire 51 extends in a ring shape, and multiple heating wires 51 are independently arranged. The heating wires 51 can be coaxially arranged with the rotation axis of the rotating part 31, making the overall structure more neat. Specifically, multiple annular grooves arranged in concentric circles can be provided on the rotating part 31, and the heating wires 51 can be installed in the annular grooves. Alternatively, multiple buckles can be provided on the rotating part 31, and the multiple buckles can be spaced apart along the circumference of the rotating part 31 to install one heating wire 51.
[0062] In some embodiments of this utility model, the temperature sensor is an infrared temperature sensor, which is disposed on the polishing head 30, and the detection direction of the infrared temperature sensor is set towards the wafer 60.
[0063] As can be seen, the infrared energy radiated by wafer 60 is converted into an electrical signal by the photoelectric conversion element of the infrared temperature sensor, and then the temperature of wafer 60 is calculated by the signal processing circuit. Alternatively, a laser beam can be emitted, and the temperature of wafer 60 can be calculated by analyzing the changes in the laser signal reflected back from wafer 60.
[0064] In some embodiments of this utility model, multiple electric heating wires 51 are coaxially arranged with the rotating part 31.
[0065] As can be seen, by arranging the electric heating wires 51 in concentric circles and setting them coaxially with the rotating part 31, the electric heating wires 51 can heat the wafer 60 more evenly, which can uniformly increase the temperature of the wafer 60, avoid heating dead zones, and improve the heating effect.
[0066] In some embodiments of this utility model, along the axial direction of the rotating part 31, a plurality of electric heating wires 51 are arranged closer to the end of the rotating part 31 away from the polishing pad 20 than the end of the rotating part 31 facing the polishing pad 20.
[0067] It can be seen that by setting the electric heating wire 51 at the end of the rotating part 31 away from the polishing pad 20, the electric heating wire 51 is kept at a certain distance from the wafer 60, reducing the radiation of the electric heating wire 51 on the wafer 60, and at the same time reducing the damage to the wafer 60 caused by the direct heating of the wafer 60 by the high temperature of the electric heating wire 51.
[0068] The above description is merely a preferred embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.
Claims
1. A wafer chemical mechanical polishing device, characterized in that, include: Polishing table; A polishing pad is provided on the polishing table; A spray pipe for spraying polishing liquid onto the polishing pad; A polishing head is used to carry a wafer on the polishing pad for chemical mechanical polishing; A heating assembly is disposed on the polishing head and is thermally connected to the polishing head; A temperature sensor is used to detect the temperature of the wafer; The control device is electrically connected to the temperature sensor and the heating component, respectively.
2. The wafer chemical mechanical polishing equipment according to claim 1, characterized in that, The heating component is disposed inside the polishing head.
3. The wafer chemical mechanical polishing equipment according to claim 2, characterized in that, The polishing head includes a rotating part for carrying the wafer to rotate, the rotation axis of the rotating part is perpendicular to the polishing pad, and the heating component is disposed inside the rotating part.
4. The wafer chemical mechanical polishing equipment according to claim 3, characterized in that, The heating component extends circumferentially along the rotating part and is arranged around the rotation axis of the rotating part.
5. The wafer chemical mechanical polishing equipment according to claim 4, characterized in that, The heating assembly includes an electric heating wire.
6. The wafer chemical mechanical polishing equipment according to claim 5, characterized in that, The control device is electrically connected to the plurality of the electric heating wires and is configured to selectively control the power of at least one of the electric heating wires.
7. The wafer chemical mechanical polishing equipment according to claim 5, characterized in that, The number of electric heating wires is multiple, and the multiple electric heating wires extend in a ring along the circumference of the rotating part, and the multiple electric heating wires are nested sequentially along the radial direction of the rotating part.
8. The wafer chemical mechanical polishing equipment according to claim 6, characterized in that, The temperature sensor is an infrared temperature sensor, which is located on the polishing head and its detection direction is oriented towards the wafer.
9. The wafer chemical mechanical polishing equipment according to claim 7, characterized in that, The plurality of electric heating wires are coaxially arranged with the rotating part.
10. The wafer chemical mechanical polishing equipment according to claim 9, characterized in that, Along the axial direction of the rotating part, the plurality of electric heating wires are arranged closer to the end of the rotating part away from the polishing pad than the end of the rotating part facing the polishing pad.