Indium electrolytic directional deposition cell

Abstract

The utility model relates to indium electrolysis technical field, specifically, relate to a kind of indium electrolysis directional deposition tank, the U-shaped plate of electrolytic tank main body is constructed with steam interlayer using double-layer structure, and steam circulation pipeline is connected outside.In the process of indium electrolysis, steam circulation pipeline is responsible for conveying steam into steam interlayer.Steam flows in interlayer, and heat is evenly transferred to electrolytic tank interior in the mode of heat transfer, and then the temperature of entire electrolytic tank is regulated and controlled.By controlling the flow, temperature and other parameters of steam, the temperature in electrolytic tank can be maintained in the range suitable for indium electrolysis, ensuring that the electrolysis reaction is carried out under stable temperature conditions.When indium ions in electrolyte diffuse to the vicinity of columnar low-temperature crystallization unit, indium ions preferentially nucleate in this area due to the low-temperature environment, and then gradually grow into crystals, realizing directional deposition crystallization of indium at a specific location.

Description

Technical Field

[0001] This utility model relates to the field of indium electrolysis technology, and more specifically, to an indium electrolysis directional deposition tank. Background Technology

[0002] With the rapid development of the LCD industry, the number of waste LCD screens is also increasing. Recovering indium from waste LCD screen powder has become an important research direction for resource recycling. Electrolysis is a key step in the process of recovering indium from LCD screen powder; it can extract indium ions from a pretreated indium-containing solution through electrolytic deposition.

[0003] In traditional electrolytic cells, the temperature field distribution is difficult to control precisely, which leads to disordered orientation of indium crystal growth. Indium ions crystallize in a disordered temperature field, failing to form a regular and ordered crystal structure, thus affecting the quality and performance of the indium deposition layer and reducing the purity and application value of indium products.

[0004] Secondly, there are shortcomings in the control of directional crystallization of indium ions. Due to the lack of effective means to guide indium ions to preferentially nucleate and crystallize at specific locations, indium ions are randomly deposited in the electrolyte, resulting in low density of the deposited layer and numerous porosity and defects. This not only affects the recovery rate of indium but also increases the difficulty and cost of subsequent purification processes.

[0005] In summary, developing an indium electrolytic directional deposition cell that can solve the above problems is of great practical significance; it can improve the efficiency and quality of indium recovery from waste LCD screen powder and promote the sustainable development of the resource recycling industry. Utility Model Content

[0006] To address the problems existing in the prior art, this utility model proposes an indium electrolytic directional deposition tank.

[0007] To solve the above-mentioned technical problems, the present invention provides a solution through the following technical method:

[0008] An indium electrolytic directional deposition cell includes an electrolytic cell body, an anode chamber, a cathode chamber, and an ion exchange membrane. The electrolytic cell body includes a U-shaped plate and a sealing plate. The U-shaped plate has an upward opening and is a double-layer structure. A steam jacket is formed between the inner and outer layers, and a steam circulation pipe is connected to the outside of the steam jacket.

[0009] A columnar low-temperature crystallization unit is provided on the side wall of the sealing plate located in the cathode chamber.

[0010] It also includes a circulating cooling device for cooling the columnar low-temperature crystallization unit.

[0011] The U-shaped plate of the electrolytic cell body employs a double-layer structure to create a steam jacket, which is externally connected to a steam circulation pipe. During indium electrolysis, the steam circulation pipe is responsible for supplying steam into the steam jacket. The steam flows within the jacket, uniformly transferring heat to the interior of the electrolytic cell through heat transfer, thereby regulating the temperature of the entire electrolytic cell. By controlling parameters such as steam flow rate and temperature, the temperature inside the electrolytic cell can be maintained within a suitable range for indium electrolysis, ensuring that the electrolysis reaction proceeds under stable temperature conditions.

[0012] A columnar low-temperature crystallization unit is installed on the side wall of the sealing plate in the cathode chamber, and equipped with a circulating cooling device. When the circulating cooling device is working, it lowers the temperature of the columnar low-temperature crystallization unit to below the temperature of the electrolyte. According to crystal growth theory, low-temperature regions are more conducive to the aggregation of indium ions and the formation of crystal nuclei. When indium ions in the electrolyte diffuse to the vicinity of the columnar low-temperature crystallization unit, due to the low-temperature environment of that region, the indium ions preferentially nucleate there, and then gradually grow into crystals, achieving directional deposition and crystallization of indium at a specific location.

[0013] Preferably, the steam circulation pipeline includes a steam inlet pipe and a steam outlet pipe, which are arranged diagonally.

[0014] The diagonal arrangement of the steam inlet and outlet pipes effectively improves the flow state of steam within the steam jacket, greatly enhancing the uniformity of the temperature field within the electrolytic cell.

[0015] As a preferred embodiment, the columnar low-temperature crystallization unit is provided with a cooling medium cavity, and the sealing plate located in the cathode chamber has a double-layer structure, with a circulating water interlayer formed between the inner and outer layers. The cooling medium cavity is connected to the circulating water interlayer, and a circulating water pipe is connected to the outside of the circulating water interlayer.

[0016] The circulating water in the circulating water pipe can enter the cooling medium cavity through the circulating water jacket to cool the columnar low-temperature crystallization unit.

[0017] Preferably, the sealing plate in the cathode chamber has a heat insulation plate fixed on its side wall near the electrolyte, and the heat insulation plate has an installation hole through which the columnar low-temperature crystallization unit passes.

[0018] The heat insulation plate can block heat transfer between the sealing plate and the cathode chamber; without it, heat transfer would interfere with the localized low-temperature environment created by the columnar low-temperature crystallization unit. The heat insulation plate effectively blocks heat conduction, maintains relative stability of the temperature field within the cathode chamber, and ensures a low-temperature region around the columnar low-temperature crystallization unit.

[0019] Preferably, the columnar low-temperature crystallization unit has a groove array on its surface.

[0020] The array of micron-sized trenches on the surface of the columnar low-temperature crystallization unit significantly increases its surface roughness and surface area. During indium electrolysis, these micron-sized trenches provide numerous additional nucleation sites when indium ions diffuse from the electrolyte to the surface of the columnar low-temperature crystallization unit. According to crystal growth theory, nucleation is the initial stage of crystal growth. More nucleation sites mean that, under the same conditions, indium ions are more likely to aggregate and form crystal nuclei at these locations. This guides indium ions to preferentially nucleate at the trenches on the surface of the columnar low-temperature crystallization unit, initiating the directional crystallization process.

[0021] Preferably, the trench depth is 50-100μm, the width is 200-300μm, and the spacing between adjacent trenches is 1.2-1.5 times the trench width.

[0022] The optimized trench dimensions create ideal conditions for the nucleation and growth of indium ions. More indium ions can rapidly form crystal nuclei within the trenches, and the crystal growth rate is accelerated, significantly reducing the time required for indium electrolytic deposition. In actual production, this means that a certain amount of indium can be deposited in a shorter time, significantly improving production efficiency, reducing production costs, and enhancing the company's economic benefits. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of the indium electrolytic directional deposition tank in the embodiment;

[0024] Figure 2 This is a schematic diagram of the U-shaped plate in the embodiment;

[0025] Figure 3 This is a schematic diagram of the internal structure of the U-shaped plate in the embodiment;

[0026] Figure 4 This is an exploded view of the sealing plate and the heat insulation plate in the embodiment;

[0027] Figure 5 This is a schematic diagram of the internal structure of the sealing plate at the cathode chamber in the embodiment.

[0028] The names of the parts referred to by the numbers in the attached diagram are as follows:

[0029] 110. Electrolytic cell body; 1101. U-shaped plate; 1102. Sealing plate; 1103. Steam jacket; 1104. Circulating water jacket; 1105. Circulating water pipe; 1201. Anode chamber; 1202. Cathode chamber; 1203. Ion exchange membrane; 130. Steam circulation pipe; 1301. Steam inlet pipe; 1302. Steam outlet pipe; 140. Columnar low-temperature crystallization unit; 1401. Cooling medium cavity; 1402. Groove; 150. Heat insulation plate; 1501. Mounting hole. Detailed Implementation

[0030] To further understand the content of this utility model, a detailed description of this utility model will be provided in conjunction with the accompanying drawings and embodiments. It should be understood that the embodiments are merely illustrative of this utility model and are not intended to limit it.

[0031] Example

[0032] The process of recovering indium from LCD screens includes the following steps: waste LCD screen → crushing and pulverizing → LCD screen powder with uniform particle size → acid leaching process → multiple acid leaching or countercurrent acid leaching optimization → indium-containing solution → extraction process → pure and concentrated indium-containing solution → electrolytic purification → solid indium.

[0033] like Figures 1-5 As shown, the indium electrolytic directional deposition tank in this example mainly consists of an electrolytic cell body 110, an anode chamber 1201, a cathode chamber 1202, an ion exchange membrane 1203, a steam circulation pipe 130, a columnar low-temperature crystallization unit 140, a circulating cooling device, a circulating water pipe 1105, and a heat insulation plate 150.

[0034] The electrode of the anode chamber is connected to the positive terminal of the power supply, and the electrode of the cathode chamber is connected to the negative terminal of the power supply. This is a common structure of electrolytic cells, and will not be described in detail in this embodiment.

[0035] The electrolytic cell body 110 includes an upward-opening U-shaped plate 1101 and a sealing plate 1102. The sealing plate 1102 is welded to the ends of both sides of the U-shaped plate 1101. The U-shaped plate 1101 has a double-layer structure, forming a steam jacket 1103 between the inner and outer layers. This steam jacket 1103 is externally connected to a steam circulation pipe 130. The steam circulation pipe 130 includes a steam inlet pipe 1301 and a steam outlet pipe 1302, which are arranged diagonally. The sealing plate 1102 and the U-shaped plate 1101 cooperate to form the electrolytic cell body 110.

[0036] The sealing plate 1102 located in the cathode chamber 1202 also has a double-layer structure, with a circulating water jacket 1104 formed between its inner and outer layers. The circulating water jacket 1104 is connected to a circulating water pipe 1105. A heat insulation plate 150 is fixed to the side wall of the sealing plate 1102 near the electrolyte. The heat insulation plate 150 has a mounting hole 1501, through which the columnar low-temperature crystallization unit 140 passes and is fixed to the side wall of the sealing plate 1102. The heat insulation plate is fixed to the side wall of the sealing plate using adhesive.

[0037] The columnar low-temperature crystallization unit 140 is provided with a cooling medium cavity 1401, which is connected to the circulating water jacket.

[0038] The columnar low-temperature crystallization unit 140 is also provided with a micron-level trench 1402 array on its surface. The trench 1402 has a depth of 50-100μm and a width of 200-300μm. The spacing between adjacent trenches 1402 is 1.2-1.5 times the width of the trench 1402.

[0039] The specific operating principle and process of the above-mentioned device are as follows:

[0040] Before the indium electrolysis process begins, steam is supplied to the steam jacket 1103 of the U-shaped plate 1101 through the steam circulation pipe 130. The steam enters through the steam inlet pipe 1301. Because the inlet and outlet pipes are arranged diagonally, the steam flows freely within the jacket, fully exchanging heat with the double-layer structure of the U-shaped plate 1101, thus evenly transferring heat to the interior of the electrolytic cell and controlling the temperature of the entire electrolytic cell. By controlling parameters such as steam flow rate and temperature, the temperature inside the electrolytic cell is maintained within a suitable range for indium electrolysis, creating stable temperature conditions for the indium electrolysis reaction.

[0041] Simultaneously, the circulating cooling device is activated, allowing the low-temperature cooling medium to flow into the cooling medium cavity 1401 within the columnar low-temperature crystallization unit 140. The cooling medium flows within the cavity, lowering the temperature of the columnar low-temperature crystallization unit 140 through heat exchange, making it lower than the temperature of the electrolyte, thus creating a low-temperature environment in a localized area of ​​the cathode chamber 1202. When indium ions in the electrolyte diffuse to the vicinity of the columnar low-temperature crystallization unit 140 under the influence of the electric field, due to the low-temperature environment in that region, the indium ions preferentially accumulate and form crystal nuclei.

[0042] The micron-scale trench array 1402 on the surface of the columnar low-temperature crystallization unit 140 provides a large number of additional nucleation sites, enabling more indium ions to rapidly form crystal nuclei at the trenches 1402. After nucleation, crystals grow along the shape and orientation of the trenches 1402. Due to the optimized design of the depth, width, and spacing of the trenches 1402, crystal growth is orderly and rapid, and crystals grown in adjacent trenches 1402 gradually fuse, ultimately forming a continuous, dense indium deposition layer with a specific orientation.

[0043] The heat insulation plate 150 further blocks the heat transfer between the sealing plate 1102 and the cathode chamber 1202, maintains the relative stability of the temperature field inside the cathode chamber 1202, and ensures the cooling effect of the circulating water on the columnar low-temperature crystallization unit 140.

[0044] In actual production testing, compared to traditional indium electrolysis equipment, the directional deposition tank of this embodiment can complete a certain amount of indium deposition in a shorter time. Through precise temperature control and directional crystallization design, the quality of the formed indium deposition layer is significantly improved. The deposited layer has a highly ordered crystal arrangement and a dense structure, reducing internal defects and exhibiting better performance in subsequent applications such as the manufacture of electronic components, thus enhancing the product's competitiveness in the market.

[0045] In summary, the above are merely preferred embodiments of this embodiment. All equivalent changes and modifications made in accordance with the scope of the patent application of this embodiment shall fall within the scope of the patent of this embodiment.

Claims

1. An indium electrolytic directional deposition cell, comprising an electrolytic cell body (110), an anode chamber (1201), a cathode chamber (1202), and an ion exchange membrane (1203), characterized in that: The main body (110) of the electrolytic cell includes a U-shaped plate (1101) and a sealing plate (1102). The U-shaped plate (1101) has an upward opening and is a double-layer structure. A steam jacket (1103) is formed between the inner and outer layers. A steam circulation pipe (130) is connected to the outside of the steam jacket (1103). A columnar low-temperature crystallization unit (140) is provided on the side wall of the sealing plate (1102) located in the cathode chamber (1202). It also includes a circulating cooling device for cooling the columnar low-temperature crystallization unit (140).

2. The indium electrolytic directional deposition tank according to claim 1, characterized in that: The steam circulation pipeline (130) includes a steam inlet pipe (1301) and a steam outlet pipe (1302), which are arranged diagonally.

3. The indium electrolytic directional deposition tank according to claim 1, characterized in that: The columnar low-temperature crystallization unit (140) is provided with a cooling medium cavity (1401). The sealing plate (1102) located in the cathode chamber (1202) has a double-layer structure, with a circulating water jacket (1104) formed between the inner and outer layers. The cooling medium cavity (1401) is connected to the circulating water jacket (1104). A circulating water pipe (1105) is connected to the outside of the circulating water jacket (1104).

4. An indium electrolytic directional deposition tank according to claim 3, characterized in that: The sealing plate (1102) inside the cathode chamber (1202) has a heat insulation plate (150) fixed on its side wall near the electrolyte. The heat insulation plate (150) has an installation hole (1501) through which the columnar low-temperature crystallization unit (140) passes.

5. An indium electrolytic directional deposition tank according to claim 3, characterized in that: The columnar low-temperature crystallization unit (140) has a groove (1402) array on its surface.

6. An indium electrolytic directional deposition tank according to claim 5, characterized in that: The groove (1402) has a depth of 50-100μm and a width of 200-300μm, and the spacing between adjacent grooves (1402) is 1.2-1.5 times the width of the groove (1402).

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