A chip coaxial attenuator, coaxial attenuator assembly and signal conditioning device
By setting input and output metal layers on both sides of the substrate and optimizing the width of the ground metal layer, the chip coaxial attenuator design solves the problem of performance degradation of traditional coaxial attenuators in the high-frequency band and realizes stable transmission of high-frequency signals.
CN224554675UActive Publication Date: 2026-07-24SHENZHEN ZHENHUA MICROELECTRONICS
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHENZHEN ZHENHUA MICROELECTRONICS
- Filing Date
- 2025-08-11
- Publication Date
- 2026-07-24
AI Technical Summary
Technical Problem
Traditional coaxial attenuators degrade in performance at high frequencies (40GHz and above), failing to meet the demands of current high-frequency applications.
Method used
The design employs a chip coaxial attenuator. By setting input and output metal layers on both sides of the substrate, the parasitic effects formed by the pads and connection metal layers are avoided, and the width of the ground metal layer is optimized to reduce the self-resonance effects of distributed capacitance and inductance.
Benefits of technology
It improves high-frequency performance, avoids impedance mismatch and return loss, and enhances signal transmission capability in the 40GHz and above frequency bands.
✦ Generated by Eureka AI based on patent content.
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Figure CN224554675U_ABST
Abstract
The utility model provides a kind of sheet type coaxial attenuator, coaxial attenuator assembly and signal adjusting device, it is related to attenuator technical field, the utility model includes: substrate;Resistance film layer, it is longitudinally extended and is configured on the first end surface of substrate;Connecting metal layer, it is horizontally extended and is configured on the first end surface of substrate, connecting metal layer is electrically connected with resistance film layer;Ground metal layer, it is configured in both ends of substrate, ground metal layer is electrically connected with both ends of resistance film layer;And, input metal layer and output metal layer, two are respectively configured on the opposite two side wall surfaces of substrate, input metal layer is electrically connected with one end of connecting metal layer, output metal layer is electrically connected with another end of connecting metal layer.The utility model solves the problem that traditional coaxial attenuator in the prior art is prone to performance deterioration when operating frequency band is 40GHz and above.
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