Heating mechanism for MOCVD equipment
By using multiple coaxial heating strips arranged in combination in the MOCVD equipment, the problem of temperature field non-uniformity was solved, and the wavelength uniformity of LED epitaxial wafers was improved, especially in the fine heating and temperature compensation of the core, inner and outer ring areas of the substrate carrier stage.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FOSHAN NATIONSTAR SEMICONDUCTOR CO LTD
- Filing Date
- 2025-06-26
- Publication Date
- 2026-07-28
AI Technical Summary
The heating components of traditional MOCVD equipment result in uneven temperature fields, affecting the wavelength uniformity of LED epitaxial wafers, especially with significant differences between the outer and inner regions of the substrate stage.
Multiple heating bars are arranged coaxially, including a first heating bar group and a second heating bar group. The second heating bar group is dispersed in the first heating bar group and recessed, so as to independently and precisely heat the core, inner ring and outer ring areas respectively, and perform temperature compensation in the transition area.
Effective control of temperature field uniformity improves the wavelength uniformity of LED epitaxial wafers, reduces overshoot in the inner region, and achieves precise temperature regulation and compensation.
Smart Images
Figure CN224564693U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing, specifically to a heating mechanism for MOCVD equipment. Background Technology
[0002] MOCVD equipment, short for "metal-organic chemical vapor deposition equipment", is a specialized device used to grow high-quality thin films and epitaxial layers, and is widely used in the semiconductor manufacturing field.
[0003] Currently, please refer to Figure 1 The heating mechanism used in MOCVD equipment mainly consists of a substrate support stage, heating components, and heat insulation components. The substrate support stage is rotatable and is used to load the substrate, facilitating uniform heating of the substrate. The heating components are spaced below the substrate support stage to heat the substrate support stage. The heat insulation components are fixedly installed below the heating components to prevent heat from being transferred downwards, which helps to improve the heating efficiency of the heating components on the substrate support stage.
[0004] When manufacturing LED epitaxial wafers using MOCVD equipment, multiple substrates are typically mounted simultaneously on the substrate stage within the MOCVD reaction chamber to improve processing efficiency. At this time, it is crucial to strictly control the temperature of all areas on the substrate stage surface to create a precise and uniform temperature field. Changes in this temperature field directly affect the wavelength performance of the LED epitaxial wafer.
[0005] 1) Temperature affects material growth rate. Increased temperature accelerates the decomposition and reaction rate of the metal-organic source and reactant gases, allowing more atoms and molecules to reach the substrate surface and participate in epitaxial growth, thus accelerating the epitaxial layer growth rate. For the InGaN material system, changes in growth rate affect the incorporation amount of In. If the growth rate is too fast, In atoms cannot be incorporated into the lattice in time, resulting in uneven In content distribution, which in turn causes changes in the wavelength of the epitaxial wafer.
[0006] 2) Temperature affects the diffusion and migration ability of In atoms on the substrate surface. At lower temperatures, In atoms have weak diffusion ability and find suitable lattice positions on the substrate surface for doping, which may lead to the formation of In clusters, resulting in uneven In composition distribution and causing wavelength fluctuations in the epitaxial wafer. At higher temperatures, In atoms have excessive diffusion ability and may detach from the growth surface, causing the In composition doping to be inconsistent with expectations and affecting the wavelength of the epitaxial wafer.
[0007] 3) Temperature affects material stress. During epitaxial growth, the coefficients of thermal expansion of the epitaxial layer and the substrate material typically differ. Unstable and uneven temperature fluctuations can lead to inconsistent expansion and contraction between the epitaxial layer and the substrate. This thermal stress affects the lattice of the epitaxial layer, thereby altering the material's band structure. For the InGaN material system, changes in the band structure result in a shift in the emission wavelength. For example, compressive stress narrows the band and causes a redshift, while tensile stress widens the band and causes a blueshift.
[0008] Please see Figure 2 Traditional heating elements are typically a single heating strip made of high-temperature resistant metals such as tungsten or molybdenum, spirally mounted on a heat insulation component. However, this type of heating element produces an uneven temperature field during operation, with the outer ring tending to be too cold and the inner ring too hot. This results in a significant difference in wavelength between the LED epitaxial wafers in the outer and inner regions of the substrate support, severely affecting the wavelength uniformity of LED epitaxial wafers from the same production batch. Utility Model Content
[0009] The purpose of this invention is to overcome the shortcomings of the prior art. This invention provides a heating mechanism for MOCVD equipment. By combining and arranging multiple heating strips to form a heating component, the uniformity of the temperature field can be effectively controlled, thereby improving the wavelength uniformity of LED epitaxial wafers.
[0010] This utility model provides a heating mechanism for an MOCVD equipment, including a substrate support stage, a heating component, and a heat insulation component. The substrate support stage is rotatably disposed above the heating component, and the heating component is fixedly disposed on the heat insulation component. The heating component includes a first heating strip group and a second heating strip group arranged coaxially. The second heating strip group is dispersed in the first heating strip group, and the upper surface of the second heating strip group is recessed relative to the upper surface of the first heating strip group.
[0011] The first heating strip group includes, from the inside out, a first core heating strip, a first inner ring heating strip, a first middle ring heating strip, and a first outer ring heating strip. The second heating strip group includes, from the inside out, a second inner ring heating strip and a second outer ring heating strip. The second inner ring heating strip is located between the first inner ring heating strip and the first middle ring heating strip, and the second outer ring heating strip is located between the first middle ring heating strip and the first outer ring heating strip.
[0012] Specifically, the bottom area of the substrate support stage is S. 底 The upper surface area of the first heating strip group is S1, and the upper surface area of the second heating strip group is S2. 底 The constraint relationship between S1 and S2 is as follows:
[0013] 60%S 底 ≤S1≤70%S 底 4%S 底 ≤S2≤8%S 底 .
[0014] Specifically, the first core heating strip is a complete ring structure;
[0015] The first inner ring heating strip is repeatedly bent around the first core heating strip. The first inner ring heating strip has a first axisymmetric structure. The first axisymmetric structure has a first axis of symmetry, which passes through the center of the first core heating strip.
[0016] The first middle heating strip is repeatedly bent around the first inner heating strip. The first middle heating strip has a second axisymmetric structure. The second axisymmetric structure has a second axis of symmetry. The second axis of symmetry is collinear with the first axis of symmetry.
[0017] The first outer ring heating strip is a ring structure with a notch, and the first outer ring heating strip has a third axis of symmetry, which is collinear with the second axis of symmetry.
[0018] Specifically, the second inner ring heating strip is a ring structure with a notch, and the second inner ring heating strip has a fourth axis of symmetry, which is collinear with the third axis of symmetry;
[0019] The second outer ring heating strip is a ring structure with a notch, and the second outer ring heating strip has a fifth axis of symmetry, which is collinear with the fourth axis of symmetry.
[0020] Specifically, the spacing between adjacent heating strips in the first core heating strip, the first inner ring heating strip, the first middle ring heating strip, and the first outer ring heating strip ranges from 10 to 16 mm.
[0021] Specifically, the heating mechanism further includes a temperature sensing component, which includes a first infrared temperature sensor, a second infrared temperature sensor, a third infrared temperature sensor, a fourth infrared temperature sensor, a first thermocouple sensor, and a second thermocouple sensor. The working window of the first infrared temperature sensor is aligned with the first core heating strip from above the substrate support platform. The working window of the second infrared temperature sensor is aligned with the first inner ring heating strip from above the substrate support platform. The working window of the third infrared temperature sensor is aligned with the first middle ring heating strip from above the substrate support platform. The working window of the fourth infrared temperature sensor is aligned with the first outer ring heating strip from above the substrate support platform. The working end of the first thermocouple sensor passes through the heat insulation component and is located beside the bottom of the second inner ring heating strip. The working end of the second thermocouple sensor passes through the heat insulation component and is located beside the bottom of the second outer ring heating strip.
[0022] Specifically, the heating mechanism further includes a bushing, in which the heating component and the heat insulation component are enclosed, and the substrate support platform is exposed outside the bushing.
[0023] Specifically, the upper end of the bushing is provided with an annular flow guide wall, which gradually curves toward the bottom center of the substrate support platform, and the upper edge of the annular flow guide wall points toward the bottom edge of the substrate support platform.
[0024] Specifically, the heat insulation component includes several layers of heat insulation panels, and the thickness of any one of the heat insulation panels ranges from 10 to 15 mm.
[0025] Specifically, the stacked insulation panels, from top to bottom, consist of a porous ceramic plate, a carbon aerogel plate, and an aluminum-silicon alloy phase change plate.
[0026] Compared with the prior art, the beneficial effects of this utility model are:
[0027] In the heating mechanism of the MOCVD equipment of this invention, the first heating strip group and the second heating strip group are coaxial, with the second heating strip group distributed within the first heating strip group and arranged in a relatively recessed manner. The first heating strip group includes four heating strips, enabling independent and precise heating of the core area, inner ring area, middle ring area, and outer ring area of the substrate support stage. Furthermore, the second heating strip group includes two heating strips, respectively positioned in the transition areas between the inner and middle rings and between the middle and outer rings, where large temperature gradients are likely to occur, allowing for independent and precise temperature compensation in these transition areas. In summary, this invention, by combining and arranging multiple heating strips to form a heating assembly, can effectively control the uniformity of the temperature field, thereby improving the wavelength uniformity of the LED epitaxial wafer. Attached Figure Description
[0028] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0029] Figure 1 This is a schematic diagram of the structure of an existing MOCVD device;
[0030] Figure 2 This is a schematic diagram of the existing heating assembly;
[0031] Figure 3 This is a schematic diagram of the heating mechanism in an embodiment of this utility model;
[0032] Figure 4 This is a schematic diagram of the heating component in an embodiment of this utility model.
[0033] In the attached diagram, 100 is a substrate support platform; 110 is a substrate placement slot; 200 is a heating assembly; 210 is a first heating strip group; 211 is a first core heating strip; 212 is a first inner ring heating strip; 213 is a first middle ring heating strip; 214 is a first outer ring heating strip; 220 is a second heating strip group; 221 is a second inner ring heating strip; 222 is a second outer ring heating strip; 300 is a heat insulation assembly; 311 is a porous ceramic plate; 312 is a carbon aerogel plate; 313 is an aluminum-silicon alloy phase change plate; 411 is a first infrared temperature sensor; 412 is a second infrared temperature sensor; 413 is a third infrared temperature sensor; 414 is a fourth infrared temperature sensor; 421 is a first thermocouple sensor; 422 is a second thermocouple sensor; 500 is a bushing; and 510 is an annular flow guide wall. Detailed Implementation
[0034] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.
[0035] This invention provides a heating mechanism for MOCVD equipment. Figure 3A schematic diagram of the heating mechanism in an embodiment of the present invention is shown. The heating mechanism includes a substrate support platform 100, a heating component 200, and a heat insulation component 300. The substrate support platform 100 is rotatably disposed above the heating component 200, and the heating component 200 is fixedly disposed on the heat insulation component 300.
[0036] Figure 4 A schematic diagram of the heating assembly in an embodiment of the present invention is shown. The heating assembly 200 includes a first heating strip group 210 and a second heating strip group 220 arranged coaxially. The second heating strip group 220 is dispersed in the first heating strip group 210, and the upper surface of the second heating strip group 220 is recessed relative to the upper surface of the first heating strip group 210. The first heating strip group 210 includes, from the inside out, a first core heating strip 211, a first inner ring heating strip 212, a first middle ring heating strip 213, and a first outer ring heating strip 214. The second heating strip group 220 includes, from the inside out, a second inner ring heating strip 221 and a second outer ring heating strip 222. The second inner ring heating strip 221 is located between the first inner ring heating strip 212 and the first middle ring heating strip 213, and the second outer ring heating strip 222 is located between the first middle ring heating strip 213 and the first outer ring heating strip 214.
[0037] In the heating mechanism of the MOCVD equipment of this invention, the first heating strip group 210 and the second heating strip group 220 are coaxial, and the second heating strip group 220 is distributed in the first heating strip group 210 and is relatively recessed. The first heating strip group 210 includes four heating strips, which can perform independent and precise heating operations on the core area, inner ring area, middle ring area and outer ring area of the substrate support stage 100. Moreover, the second heating strip group 220 includes two heating strips, which are respectively set in the transition areas of the inner ring-middle ring and the middle ring-outer ring where large temperature gradients are likely to occur, and can perform independent and precise temperature compensation for these transition areas. In summary, by using multiple heating strips in combination to form a heating component 200, this invention can effectively control the uniformity of the temperature field, thereby improving the wavelength uniformity of the LED epitaxial wafer.
[0038] Moreover, the physical recessed design of the second heating strip group 220 makes the process of transferring heat to the substrate carrier stage 100 more gentle and localized when heating the substrate carrier stage 100, and is less likely to cause overshoot in the inner area.
[0039] Specifically, the height difference between the upper surface of the first heating strip group 210 and the upper surface of the second heating strip group 220 is H, and the thickness of the first heating strip group 210 is h. The constraint relationship between H and h is: 0.5h ≤ H ≤ h. The upper surface of the second heating strip group 220 is recessed by a specific height relative to the upper surface of the first heating strip group 210, which can reduce the direct thermal radiation coupling between the second heating strip group 220 and the first heating strip group 210, and also reduce the direct impact on the adjacent area when the heat of the second heating strip group 220 is transferred to the upper substrate support stage 100. This makes it easier to adjust the power of a certain heating strip of the second heating strip group 220, resulting in less interference with the temperature of other areas, a more stable temperature field, and more precise control.
[0040] In some specific embodiments, the bottom area of the substrate support stage 100 is S. 底 The upper surface area of the first heating bar group 210 is S1, and the upper surface area of the second heating bar group 220 is S2. 底 The constraint relationship between S1 and S2 is: 60%S 底 ≤S1≤70%S 底 4%S 底 ≤S2≤8%S 底 The first heating strip group 210 has a large upper surface area and can bear at least 90% of the heating power, making it the main heating element for the substrate support stage 100. The second heating strip group 220 has a small upper surface area and bears no more than 10% of the heating power. It is mainly used to adjust the temperature of areas on the substrate support stage 100 that are prone to large temperature gradients.
[0041] Preferably, S1 = 65%S 底 S2 = 6%S 底 At this time, the combined heating effect of the first heating strip group 210 and the second heating strip group 220 is optimal, and the resulting temperature field is uniform and stable.
[0042] In some specific embodiments, please refer to Figure 4 The first core heating strip 211 is a ring-shaped structure that can completely surround the rotating shaft that supports the substrate carrier platform 100, which is conducive to the core area of the substrate carrier platform 100 being fully heated and then evenly transferring heat to the surrounding area.
[0043] For details, please refer to Figure 4 The first inner heating strip 212 repeatedly bends around the first core heating strip 211. The first inner heating strip 212 has a first axisymmetric structure with a first axis of symmetry that passes through the center of the first core heating strip 211. The structural design of the first inner heating strip 212 helps to ensure uniform heating of the inner area of the substrate support stage 100.
[0044] For further details, please refer to Figure 4 The first middle heating strip 213 is repeatedly bent around the first inner heating strip 212. The first middle heating strip 213 has a second axisymmetric structure, which has a second axis of symmetry that is collinear with the first axis of symmetry. The structural design of the first middle heating strip 213 helps to ensure uniform heating of the middle area of the substrate support stage 100.
[0045] For further details, please refer to Figure 4 The first outer ring heating strip 214 is a ring structure with a notch, and the first outer ring heating strip 214 has a third axis of symmetry, which is collinear with the second axis of symmetry. The first outer ring heating strip 214 helps to ensure uniform heating of the outer ring area of the substrate support stage 100.
[0046] Please see Figure 4 The first inner ring heating strip 212, the first middle ring heating strip 213 and the first outer ring heating strip 214 are collinear and pass through the center of the first core heating strip 211, so that each heating strip can be connected by a wire drawn from the area where the axis of symmetry is located.
[0047] In some specific embodiments, please refer to Figure 4 The second inner ring heating strip 221 is a ring structure with a notch. The second inner ring heating strip 221 has a fourth axis of symmetry, which is collinear with the third axis of symmetry. The structural design of the second inner ring heating strip 221 is conducive to ensuring uniform heating of the transition area between the inner ring and the middle ring.
[0048] For further details, please refer to Figure 4 The second outer ring heating strip 222 is a ring structure with a notch. The second outer ring heating strip 222 has a fifth axis of symmetry, which is collinear with the fourth axis of symmetry. The structural design of the second outer ring heating strip 222 is conducive to ensuring uniform heating in the transition area between the middle ring and the outer ring.
[0049] Please see Figure 4 The axis of symmetry of the second inner ring heating strip 221 and the second outer ring heating strip 222 is collinear with the axis of symmetry of the first heating strip group 210, which facilitates the connection of each heating strip from the area where the axis of symmetry is located.
[0050] In some specific embodiments, the spacing between adjacent heating strips in the first core heating strip 211, the first inner ring heating strip 212, the first middle ring heating strip 213, and the first outer ring heating strip 214 ranges from 10 to 16 mm. The spacing distribution of the first heating strip group 210 is reasonable, which is conducive to making proper use of the heat generated by each heating strip. It can not only improve the uniformity of the temperature field, but also reduce energy consumption.
[0051] Optionally, in the first heating bar group 210, the spacing between adjacent heating bars can be 10mm, 12mm, 14mm, or 16mm. Preferably, in the first heating bar group 210, the spacing between adjacent heating bars is 14mm, providing a good basis for the distributed arrangement of the second heating bar group 220.
[0052] In some specific embodiments, please refer to Figure 3 The heating mechanism further includes a temperature sensing assembly, which comprises a first infrared temperature sensor 411, a second infrared temperature sensor 412, a third infrared temperature sensor 413, a fourth infrared temperature sensor 414, a first thermocouple sensor 421, and a second thermocouple sensor 422. The working window of the first infrared temperature sensor 411 is aligned with the first core heating strip 211 from above the substrate support platform 100, and the working window of the second infrared temperature sensor 412 is aligned with the first inner ring heating strip 212 from above the substrate support platform 100. The working window of the third infrared temperature sensor 413 is aligned with the first middle ring heating strip 213 from above the substrate support platform 100. The working window of the fourth infrared temperature sensor 414 is aligned with the first outer ring heating strip 214 from above the substrate support platform 100. The working end of the first thermocouple sensor 421 passes through the heat insulation component 300 and is located on the bottom side of the second inner ring heating strip 221. The working end of the second thermocouple sensor 422 passes through the heat insulation component 300 and is located on the bottom side of the second outer ring heating strip 222.
[0053] Each infrared temperature sensor is used to monitor the temperature of the core area, inner ring area, middle ring area, and outer ring area of the substrate stage 100 in real time. This allows the MOCVD equipment control system to make precise and detailed temperature adjustments to the heating bars in the first heating bar group 210 based on the real-time temperature of each area of the substrate stage 100, ensuring the accuracy and uniformity of the temperature field of the substrate stage 100. At the same time, each thermocouple sensor is used to monitor the ambient temperature next to each heating bar in the second heating bar group 220 in real time. This allows the MOCVD equipment control system to precisely control the power of each heating bar in the second heating bar group 220, thereby providing precise and detailed temperature compensation for the temperature field of the substrate stage 100.
[0054] In some specific embodiments, please refer to Figure 3The heating mechanism further includes a bushing 500, in which the heating component 200 and the heat insulation component 300 are enclosed, while the substrate support stage 100 is exposed outside the bushing 500. The bushing 500 reduces gas infiltration into the heating mechanism and protects it.
[0055] For details, please refer to Figure 3 The upper end of the bushing 500 is provided with an annular flow guide wall 510, which gradually curves towards the bottom center of the substrate support platform 100, with its upper edge pointing towards the bottom edge of the substrate support platform 100. The annular flow guide wall 510 can change the airflow distribution at the edge of the substrate support platform 100 when it rotates at high speed, breaking up backflow vortices at the edge and effectively reducing heat loss at the edge of the substrate support platform 100.
[0056] Furthermore, the height of the annular flow guide wall 510 is in the range of 200-210mm, which will not exceed the height of the bottom edge of the substrate carrier stage 100, so as to avoid interfering with the operation of the substrate carrier stage 100.
[0057] In addition, the annular flow guide wall 510 is a molybdenum flow guide wall, which has high strength, good heat resistance, and corrosion resistance.
[0058] In some specific embodiments, please refer to Figure 3 The heat insulation component 300 includes several stacked heat insulation panels, each with a thickness ranging from 10 to 15 mm. The stacked structure of the heat insulation component 300 effectively prevents heat from being transferred downwards, which is beneficial for heat preservation and reduces heat damage to the area below.
[0059] For details, please refer to Figure 3 The stacked insulation panels, from top to bottom, consist of a porous ceramic plate 311, a carbon aerogel plate 312, and an aluminum-silicon alloy phase change plate 313. The porous ceramic plate 311 has low thermal conductivity, good heat resistance, good mechanical strength and rigidity, and also has good chemical and physical stability, corrosion resistance, and can effectively support the heating component 200; the carbon aerogel plate 312 has excellent chemical and thermal stability, and can further isolate heat transfer; the aluminum-silicon alloy phase change plate 313 can absorb the remaining heat, keeping the area below the insulation component 300 at a relatively low temperature.
[0060] In some specific embodiments, the heating component 200 is made of molybdenum with a purity greater than 99.95% and doped with 0.1% La2O3, exhibiting excellent stability in high-temperature environments and being resistant to deformation. Specifically, the first heating strip group 210 is fixedly mounted on the porous ceramic plate 311 based on a ceramic support, while the second heating strip group 220 is directly embedded in the porous ceramic plate 311.
[0061] In some specific embodiments, please refer to Figure 3 The upper surface of the substrate support stage 100 is formed with a plurality of substrate placement grooves 110 for placing substrates, which can prevent the substrates from being thrown away when the substrate support stage 100 rotates at high speed.
[0062] In the heating mechanism of the MOCVD equipment of this invention, the first heating strip group 210 and the second heating strip group 220 are coaxial, and the second heating strip group 220 is distributed in the first heating strip group 210 and is relatively recessed. The first heating strip group 210 includes four heating strips, which can perform independent and precise heating operations on the core area, inner ring area, middle ring area and outer ring area of the substrate support stage 100. Moreover, the second heating strip group 220 includes two heating strips, which are respectively set in the transition areas of the inner ring-middle ring and the middle ring-outer ring where large temperature gradients are likely to occur, and can perform independent and precise temperature compensation for these transition areas. In summary, by using multiple heating strips in combination to form a heating component 200, this invention can effectively control the uniformity of the temperature field, thereby improving the wavelength uniformity of the LED epitaxial wafer. Moreover, the physical recessed design of the second heating strip group 220 makes the process of transferring heat to the substrate carrier stage 100 more gentle and localized when heating the substrate carrier stage 100, and is less likely to cause overshoot in the inner area.
[0063] Furthermore, in the temperature sensing component, each infrared temperature sensor is used to monitor the temperature of the core area, inner ring area, middle ring area, and outer ring area of the substrate support stage 100 in real time. This allows the MOCVD equipment control system to perform precise and detailed temperature adjustment of the heating bars in the first heating bar group 210 based on the real-time temperature of each area of the substrate support stage 100, ensuring the accuracy and uniformity of the temperature field of the substrate support stage 100. At the same time, each thermocouple sensor is used to monitor the ambient temperature next to each heating bar in the second heating bar group 220 in real time. This allows the MOCVD equipment control system to precisely control the power of each heating bar in the second heating bar group 220, thereby performing precise and detailed temperature compensation for the temperature field of the substrate support stage 100.
[0064] Furthermore, the bushing 500 of the heating mechanism encloses the heating component 200 and the heat insulation component 300, which can reduce the infiltration of gas into the heating mechanism and protect it. The annular flow guide wall 510 at the upper end of the bushing 500 can change the airflow distribution at the edge of the substrate carrier stage 100 when it rotates at high speed, disperse the backflow vortex at the edge, and effectively reduce the heat loss at the edge of the substrate carrier stage 100.
[0065] In addition, the thermal insulation component 300 has a multi-layered structure of various materials, which can effectively prevent heat from being transferred downwards. This is beneficial for heat preservation and can also reduce heat damage to the area below.
[0066] The heating mechanism for an MOCVD device provided by the embodiments of this utility model has been described in detail above. Specific examples have been used to illustrate the principle and implementation of this utility model. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of this utility model. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of this utility model. Therefore, the content of this specification should not be construed as a limitation of this utility model.
Claims
1. A heating mechanism for an MOCVD equipment, comprising a substrate support stage, a heating assembly, and a heat insulation assembly, wherein the substrate support stage is rotatably disposed above the heating assembly, and the heating assembly is fixedly disposed on the heat insulation assembly, characterized in that, The heating assembly includes a first heating strip group and a second heating strip group arranged coaxially, with the second heating strip group distributed in the first heating strip group, and the upper surface of the second heating strip group being recessed relative to the upper surface of the first heating strip group. The first heating strip group includes, from the inside out, a first core heating strip, a first inner ring heating strip, a first middle ring heating strip, and a first outer ring heating strip. The second heating strip group includes, from the inside out, a second inner ring heating strip and a second outer ring heating strip. The second inner ring heating strip is located between the first inner ring heating strip and the first middle ring heating strip, and the second outer ring heating strip is located between the first middle ring heating strip and the first outer ring heating strip.
2. The heating mechanism for the MOCVD equipment as described in claim 1, characterized in that, The bottom area of the substrate support stage is S. 底 The upper surface area of the first heating strip group is S1, and the upper surface area of the second heating strip group is S2. 底 The constraint relationship between S1 and S2 is as follows: 60%S 底 ≤S1≤70%S 底 ,4%S 底 ≤S2≤8%S 底 。 3. The heating mechanism for the MOCVD equipment as described in claim 1, characterized in that, The first core heating strip is a complete ring structure; The first inner ring heating strip is repeatedly bent around the first core heating strip. The first inner ring heating strip has a first axisymmetric structure. The first axisymmetric structure has a first axis of symmetry, which passes through the center of the first core heating strip. The first middle heating strip is repeatedly bent around the first inner heating strip. The first middle heating strip has a second axisymmetric structure. The second axisymmetric structure has a second axis of symmetry. The second axis of symmetry is collinear with the first axis of symmetry. The first outer ring heating strip is a ring structure with a notch, and the first outer ring heating strip has a third axis of symmetry, which is collinear with the second axis of symmetry.
4. The heating mechanism for the MOCVD equipment as described in claim 1, characterized in that, The second inner ring heating strip is a ring structure with a notch, and the second inner ring heating strip has a fourth axis of symmetry, which is collinear with the third axis of symmetry; The second outer ring heating strip is a ring structure with a notch, and the second outer ring heating strip has a fifth axis of symmetry, which is collinear with the fourth axis of symmetry.
5. The heating mechanism for MOCVD equipment as described in claim 1, characterized in that, In the first core heating strip, the first inner ring heating strip, the first middle ring heating strip, and the first outer ring heating strip, the spacing between adjacent heating strips ranges from 10 to 16 mm.
6. The heating mechanism for MOCVD equipment as described in claim 1, characterized in that, The heating mechanism further includes a temperature sensing component, which comprises a first infrared temperature sensor, a second infrared temperature sensor, a third infrared temperature sensor, a fourth infrared temperature sensor, a first thermocouple sensor, and a second thermocouple sensor. The working window of the first infrared temperature sensor is aligned with the first core heating strip from above the substrate support platform. The working window of the second infrared temperature sensor is aligned with the first inner ring heating strip from above the substrate support platform. The working window of the third infrared temperature sensor is aligned with the first middle ring heating strip from above the substrate support platform. The working window of the fourth infrared temperature sensor is aligned with the first outer ring heating strip from above the substrate support platform. The working end of the first thermocouple sensor passes through the heat insulation component and is located beside the bottom of the second inner ring heating strip. The working end of the second thermocouple sensor passes through the heat insulation component and is located beside the bottom of the second outer ring heating strip.
7. The heating mechanism for an MOCVD device as described in claim 1, characterized in that, The heating mechanism also includes a bushing, in which the heating component and the heat insulation component are enclosed, and the substrate support platform is exposed outside the bushing.
8. The heating mechanism for an MOCVD apparatus as described in claim 7, characterized in that, The upper end of the bushing is provided with an annular flow guide wall, which gradually curves toward the bottom center of the substrate support platform, and the upper edge of the annular flow guide wall points toward the bottom edge of the substrate support platform.
9. The heating mechanism for an MOCVD device as described in claim 1, characterized in that, The heat insulation component includes several layers of heat insulation panels, and the thickness of any one of the heat insulation panels ranges from 10 to 15 mm.
10. The heating mechanism for an MOCVD apparatus as described in claim 9, characterized in that, The stacked insulation panels, from top to bottom, consist of a porous ceramic plate, a carbon aerogel plate, and an aluminum-silicon alloy phase change plate.