Method for producing an organic light-emitting component and organic light-emitting component

Abstract

Method for the production of an organic light-emitting device (100) comprising the steps: A) Providing a substrate (1), B) Applying a first electrode (2) to the substrate (1), C) Application of at least one organic functional layer stack (5) designed to emit radiation and arranged at least above the first electrode (2), D) Applying a second electrode (6) over the organic functional layer stack (5), and E) Application of perhydropolysilazane (4) by wet chemical processes and curing of perhydropolysilazane (4) to produce at least one planarization layer (3) arranged between the first electrode (2) and the substrate (1), wherein a layer structure with at least one layer pair (10) is produced, wherein each layer pair (10) is formed from the planarization layer (3) and a layer (9) produced by atomic layer deposition or chemical vapor deposition, wherein the layer (9) produced by atomic layer deposition or chemical vapor deposition completely surrounds both the surface and the side faces of the planarization layer (3), wherein at least one layer pair (10) is followed by a further planarization layer (31), wherein the further planarization layer (31) surrounds both the side faces and the surfaces of the layer (9) produced by atomic layer deposition or chemical vapor deposition in a form-fitting and material-bonded manner, and wherein the first electrode (2) and metallizations (8) are arranged above the planarization layer (3).

Description

[0001] The invention relates to a method for producing an organic light-emitting component. The invention further relates to an organic light-emitting component.

[0002] Substrates for organic light-emitting devices, such as flexible substrates for organic LEDs, typically need to be planarized because their surface quality is usually insufficient for processing an organic functional layer stack. Furthermore, such substrates must be protected from moisture and environmental influences like oxygen and water. They also need to be at least partially electrically insulating. Current solutions often involve using organic polymers for planarization, encapsulation, or insulation. However, these polymers usually exhibit poor adhesion, particularly to inorganic layers, high permeability to water and oxygen, and significant outgassing at elevated operating temperatures.This means that such organic polymers are not sufficiently compatible for applications in demanding environments such as the automotive industry.

[0003] The publication DE 10 2013 101 598 A1 describes a method for manufacturing an optoelectronic semiconductor device.

[0004] Publication JP 2014 - 151 571 A discloses a gas barrier film, a method for its production and an electronic device with the gas barrier film.

[0005] Publication JP 2013 - 188 942 A describes a method for producing a water vapor barrier film, a water vapor barrier film and an electronic device.

[0006] Publication US 2002 / 0140347 A1 describes methods and structures for reducing lateral diffusion through cooperative barrier layers.

[0007] Publication JP 2003 - 118 030 A describes an organic gas barrier base material and an electroluminescent device using it.

[0008] One problem to be solved is to provide a method for manufacturing an organic light-emitting component that offers improved protection. In particular, the organic light-emitting component should be easy to manufacture. Furthermore, it is an object of the invention to provide an organic light-emitting component that is easy to manufacture.

[0009] These problems are solved by the items with the features of the independent patent claims. Advantageous embodiments and further developments of the items are characterized in the dependent claims and are evident from the following description and the drawings.

[0010] The process for manufacturing an organic light-emitting component comprises the following steps: A) Providing a substrate, B) Applying a first electrode to the substrate, C) Application of at least one organic functional layer stack designed to emit radiation and arranged at least above the first electrode, D) Applying a second electrode over the organic functional layer stack, and E) Application of perhydropolysilazane using wet chemical processes and curing of perhydropolysilazane to produce at least one planarization layer. The planarization layer is located between the first electrode and the substrate. Alternatively or additionally, the planarization layer is located above the second electrode.

[0011] Instead of perhydropolysilazane, polysilazane can also be used as an alternative in process step E) here and in the following.

[0012] According to at least one embodiment, the organic light-emitting component is shaped as an organic light-emitting diode (OLED).

[0013] The process includes a step A), providing a substrate. The substrate can, for example, comprise one or more materials in the form of a layer, a plate, a film, or a laminate, selected from glass, quartz, plastic, metal, silicon wafer, ceramic, or coated paper. The substrate can include or consist of glass, for example, in the form of a glass layer, glass film, or glass plate. Preferably, the substrate includes a metal or a plastic film.

[0014] According to at least one embodiment, the substrate is flexibly shaped. In particular, the substrate is flexible if it is a metal or polymer foil. Examples of suitable metal foils include copper foil, aluminum foil, or SUS foil (SUS = Steel Use Stainless). Other possibilities include low-carbon steel and anodized aluminum foil or aluminum alloys (with, for example, magnesium to improve mechanical properties), copper, nickel, and alloys thereof. Examples of suitable polymer foils include polyethylene naphthalate (PEN), polyetheretherketone (PEEK), polyethylene terephthalate (PET), or polyimide (PI).

[0015] The process includes a step B), applying a first electrode to the substrate.

[0016] According to at least one embodiment, the organic light-emitting device has a first and a second electrode. In particular, at least one of the electrodes can be transparent. Here and in the following, "transparent" refers to a layer that is permeable to visible light. The transparent layer can be clearly translucent or at least partially light-scattering and / or partially light-absorbing, so that the transparent layer can, for example, also be diffusely or milkily translucent. A layer referred to here as transparent is particularly preferably as light-transmitting as possible, so that, in particular, the absorption of light generated in the organic functional layer stack during operation of the organic light-emitting device is as low as possible.

[0017] Alternatively, both electrodes can be transparent. This allows the radiation generated in the at least one organic functional layer stack to be emitted in both directions, i.e., through both electrodes. If the organic light-emitting device has a substrate, this means that the radiation can be emitted both through the substrate, which is then also transparent, and in the direction away from the substrate. Furthermore, in this case, all layers of the organic light-emitting device can be transparent, so that the organic light-emitting device forms a transparent OLED.Furthermore, it is also possible that one of the two electrodes between which the organic functional layer stack is arranged is not transparent and preferably reflective, so that the radiation generated in the organic functional layer stack can only be emitted in one direction through the transparent electrode. If the electrode arranged on the substrate is transparent, and the substrate is also transparent, then it is referred to as a bottom emitter, while in the case where the electrode facing away from the substrate is transparent, it is referred to as a top emitter.

[0018] For example, a transparent conductive oxide (TCO Transparent Conductive Oxide), such as ITO, can be used as a material for a transparent electrode.

[0019] Transparent electrically conductive oxides (TCOs) are transparent, electrically conductive materials, typically metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, indium tin oxide (ITO), or aluminum zinc oxide (AZO). In addition to binary metal-oxygen compounds such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds such as Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O₄ also belong to this group. 12 or mixtures of different transparent, conductive oxides belong to the group of TCOs. Furthermore, TCOs do not necessarily have a stoichiometric composition and can also be p- or n-doped.

[0020] Furthermore, a transparent electrode can also have a metal layer made of a metal or alloy, for example, one or more of the following materials: silver, platinum, gold, magnesium, or an alloy of silver and magnesium. Other metals are also possible. The metal layer is so thin that it is at least partially transparent to the light generated by the organic functional layer stack, for example, a thickness of less than or equal to 50 nm.

[0021] A reflective electrode can be made from a metal such as aluminum, barium, indium, silver, gold, magnesium, calcium, or lithium, as well as compounds, combinations, and alloys thereof. In particular, a reflective electrode can consist of silver, aluminum, or alloys containing these metals, for example, Ag:Mg, Ag:Ca, or Mg:Al.

[0022] According to at least one embodiment, the first electrode is configured as the anode, and the second electrode is configured as the cathode. Alternatively, the first electrode can be configured as the cathode, and the second electrode is configured as the anode.

[0023] The electrodes can also consist of a combination of at least one or more TCO layers and at least one or more metal layers.

[0024] According to at least one embodiment, at least one organic functional layer stack is arranged above the first electrode and / or the substrate. The fact that a layer or stack is arranged or applied "on" or "over" another layer or stack can mean, here and in the following, that the layer or stack is in direct mechanical and / or electrical contact with the other layer or stack. It can also mean that the layer is arranged indirectly on or over the other layer or stack. In this case, further layers or stacks can be arranged between the layer or stack and the other layer or stack.

[0025] The method includes a step C), the application of at least one organic functional layer stack configured to emit radiation and arranged at least above the first electrode. In particular, the organic light-emitting device comprises exactly one organic functional layer stack. During operation of the organic light-emitting device, radiation is generated in the organic functional layer stack.

[0026] A wavelength of the radiation or the wavelength maximum is preferably located in the infrared and / or ultraviolet and / or visible spectral range, particularly at wavelengths between and including 420 nm and 680 nm.

[0027] The organic functional layer stack can comprise layers of organic polymers, organic oligomers, organic monomers, small organic nonpolymeric molecules, or combinations thereof. The organic functional layer stack can additionally include further functional layers configured as hole transport layers to enable effective hole injection into the at least one organic functional layer stack. Suitable materials for a hole transport layer include, for example, tertiary amines, carbazole derivatives, camphorsulfonic acid-doped polyaniline, or polystyrenesulfonic acid-doped polyethylene dioxide thiophene. The organic functional layer stack can further comprise at least one functional layer configured as an electron transport layer.In general, the organic functional layer stack can include additional layers selected from hole injection layers, hole transport layers, electron injection layers, electron transport layers, hole blocking layers, and electron blocking layers. In particular, the layers of the organic functional layer stack can be entirely or predominantly organic functional layers. Furthermore, it is also possible for individual layers of the organic functional layer stack to include or be composed of inorganic materials.

[0028] The process includes a process step D), applying a second electrode over the organic functional layer stack.

[0029] The process includes step E), the application of perhydropolysilazane or polysilazane using wet chemical methods and the curing of the perhydropolysilazane to produce at least one planarization layer. The planarization layer is located between the first electrode and the substrate. Alternatively or additionally, the planarization layer is located above the second electrode.

[0030] According to at least one embodiment, curing in step E) takes place at a temperature greater than or equal to 80 °C or 85 °C, in particular at a temperature less than or equal to 80 °C or 75 °C. In particular, curing in step E) takes place at a temperature > 85 °C and a water vapor atmosphere, for example 85%.

[0031] According to at least one embodiment, curing in step E) is carried out using UV light. In particular, the UV light is xenon light with a wavelength of 172 nm with a tolerance of 3 nm from this value.

[0032] The planarization layer can therefore be cured into an inorganic glass using low temperatures and UV irradiation. Depending on the curing conditions, a silicon oxynitride-like amorphous material (SiON) is obtained. A silicon dioxide (SiO2)-like amorphous material is obtained by curing PHPS at elevated temperature and humidity.

[0033] According to at least one embodiment, the planarization layer is applied in a structured manner. In particular, the structuring can be carried out using the wet chemical process described above. In other words, the perhydropolysilazane can be applied in a structured manner using wet chemical processes without the need for subsequent re-etching.

[0034] Alternatively, the planarization layer can also be applied across the entire surface. Here and in the following, "over the entire surface" means that the planarization layer is applied without any structure, i.e., its lateral extent corresponds to the lateral extent of the substrate. Conversely, a structured application of the planarization layer means that its lateral extent is smaller than the lateral extent of the substrate.

[0035] Perhydropolysilazane is applied primarily as a coating solution. The coating solution comprises or consists of polysilazane and its derivatives and / or perhydropolysilazane and its derivatives. It may also contain solvents, such as diethyl ether or dibutyl ether. The planar layer can be a thin layer with a thickness of 5 nm to 500 nm, a thick layer with a thickness of 500 nm to 50 µm, or multiple interconnected layers.

[0036] In particular, according to one embodiment, a planarization layer with a thickness of less than 2 µm, especially with a thickness between 200 nm and 1200 nm, for example 800 nm, is produced. Multiple applications can yield several times this value. Depending on the substrate used and its roughness, the final thickness of a planarization layer can range from 300 nm to several µm. UV curing of PHPS can produce layers of approximately 300 nm. Thermal curing can produce layers of up to 1.2 µm. For example, UV curing can produce a planarization layer in the range of 50 nm to 500 nm, and / or thermal curing can produce a planarization layer in the range of 50 nm to 1200 nm. Particularly preferred is the creation of a planarization layer in the range of 200 nm - 300 nm during UV curing and / or a planarization layer in the range of 800 - 1200 nm during temperature curing.

[0037] The planarization layer can potentially consist of several layers; for example, polymer buffer layers between two PHPS layers are conceivable. This can lead to improved flexibility of the layers.

[0038] Polysilazanes are polymeric compounds in which silicon and nitrogen atoms form the chemical backbone in an alternating arrangement. Often, each silicon atom is bonded to two nitrogen atoms and each nitrogen atom to two silicon atoms, so that molecular chains and / or rings of the formula [R1R2Si-nR3] are preferentially formed. n R1 to R3 can be hydrogen atoms or organic groups. If only H atoms are present as substituents, the polymer is called perhydropolysilazane with the formula [H₂Si-nH] nPerhydropolysilazane is often also referred to as polyperhydrosilazane or inorganic polysilazane. If hydrocarbon residues are bonded to silicon, it is referred to here and in the following as organopolysilazane. Polysilazanes are composed of one or more basic units, the monomers. By linking these basic monomer units together, chains and / or rings of varying lengths and three-dimensionally cross-linked macromolecules with a more or less broad molar mass distribution are formed.

[0039] According to at least one embodiment, the planarization layer comprises SiOx, wherein SiOx is generated from the solution of the planarization layer to be produced by releasing ammonia. In the presence of air and / or moisture and / or polar surfaces, for example OH groups, a condensation reaction takes place in which ammonia (NH3) is released. Here and in the following, SiOx refers to the oxides of silicon dioxide. Preferably, this refers to divalent silicon dioxide.

[0040] Alternatively or additionally, a silicon dioxide nitride-like material can also be produced from perhydropolysilazane. Curing can be carried out at 172 nm and a reduced O₂ atmosphere of ~5 ppm O₂. Since SiON₄ exhibits better resistance to water and oxygen diffusion, conversion would be the preferred method.

[0041] According to at least one embodiment, the polysilazane used is a perhydropolysilazane, i.e., a polysilazane saturated only with hydrogen and without any organic residue. An advantage of perhydropolysilazane is its ability to cure to form a SiOx network. This network is then preferably free of nitrogen and carbon.

[0042] According to one embodiment, SiOx is glassy. The x in SiOx is at most 2. Typically, x is less than 2. If x is less than 2, for example, the remainder to reach 2 is accounted for by the OH groups. SiOx is insensitive to moisture. Therefore, a layer of SiOx does not lose its barrier insulation or protective function even under the influence of moisture.

[0043] According to at least one embodiment, the planarization layer is shaped as a barrier. In other words, the barrier is dense. Dense here means that the planarization layer has a permeation rate of less than or equal to 0.1 g water / m². 2 per day, for example 10 -5 g H2O / m 2 per day. In particular, the planarization layer exhibits these permeation rates in combination with an ALD layer, for example made of Al2O3. The ALD layer can comprise, for example, aluminum oxide, zirconium oxide, and titanium oxide.

[0044] According to at least one embodiment, the planarization layer is shaped as a barrier. The planarization layer can be made of materials produced by a CVD process. Examples of suitable materials include SiN, SiO2, or SiC. Alternatively, materials produced by MLD, PECVD, and sputtering are also suitable.

[0045] According to at least one embodiment, the planarization layer exhibits low lateral permeability to water. Preferably, the WVTR value is 10. -4 g / dm 2 for a layer thickness of 200 nm.

[0046] According to at least one embodiment, the planarization layer produced after step E) is completely cured, has a glass-like structure and shows no outgassing of VOCs (Volatile Organic Compounds).

[0047] According to at least one embodiment, the perhydropolysilazane or polysilazane hardens into a glass-like body. In particular, the body is a planarized layer and is arranged, for example, on the surface of a first electrode or a second electrode. The planarized layer has a greater extent in a direction parallel to the layer plane than in the thickness direction. In this order, a greater extent of at least 1,000 to 20,000 times greater is increasingly preferred. Typical extents of a structured planarization range from a few mm to several cm, for example, 20 cm to 60 cm.

[0048] According to at least one embodiment, the wet chemical process is selected from a group that includes slot die coating, spray coating, inkjet printing, screen printing, spin coating, gravure printing, flexographic printing and stencil printing.

[0049] Alternatively, perhydropolysilazane or polysilazane can be applied by dispensing or spin coating. Spin coating can produce a uniform, thin film, for example with a layer thickness of 300 nm.

[0050] According to at least one embodiment, a layer stack for encapsulation is applied above the second electrode, comprising the planarization layer.

[0051] According to at least one embodiment, the planarization layer is arranged directly between the first electrode and the substrate. "Directly" here means immediate mechanical contact. In other words, no further layers or elements are arranged between the planarization layer and the first electrode and / or between the planarization layer and the substrate.

[0052] According to at least one embodiment, the planarization layer is applied in a structured manner such that its cross-sectional area is smaller than that of the substrate. In particular, the component additionally features an encapsulation, wherein the planarization layer, the encapsulation, and the substrate form a diffusion barrier against environmental influences. Preferably, the planarization layer is a component of the encapsulation layer or a component of the substrate.

[0053] The process creates a layered structure comprising at least one layer pair. Each layer pair consists of a planarization layer or another planarization layer and a layer produced by atomic layer deposition (ALD), with each layer pair followed by another planarization layer, resulting in an alternating sequence of a planarization layer or another planarization layer and an ALD layer or another ALD layer. Alternatively, the ALD layer can be deposited using chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or sputtering.

[0054] Alternatively, the ALD layer can also be applied using the MLD method (MLD: "Molecular Layer Deposition").

[0055] It is also described that a layer structure with at least one layer pair is produced, wherein each layer pair is formed from the planarization layer or another planarization layer and a layer produced by atomic layer deposition or another layer produced by atomic layer deposition, wherein the at least one layer pair is followed by another layer produced by atomic layer deposition, so that an alternating sequence of planarization layer or another planarization layer and layer produced by atomic layer deposition or another layer produced by atomic layer deposition is produced.

[0056] According to at least one embodiment, the layer structure is part of an encapsulation.

[0057] According to at least one embodiment, the layer structure comprises more than two layer pairs, wherein the layers produced by atomic layer deposition (ALD) are each formed from a metal oxide or metal nitride, or at least comprise a metal oxide, carbide, nitride, or metal nitride. Examples of suitable metal oxides include aluminum oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, zinc oxide, and lanthanum oxide. The ALD layer can, in turn, consist of an alternating combination of the aforementioned materials, i.e., a nanolaminate. Examples of suitable metal nitrides or nitrides include silicon nitride, and examples of suitable carbide include silicon carbide.

[0058] The barrier effect can be enhanced by applying layer pairs consisting of ALD layers and planarization layers. Furthermore, the excellent planarization properties of the planarization layer allow for the low-defect growth of the ALD layers. The planarization layer can be applied in a structured manner in conjunction with a hermetically sealed, flexible substrate, such as a plastic film with a barrier layer or, in particular, a metal foil.

[0059] By combining one or more planarization layers with layers applied using ALD or PECVD, the polymer film can also be very well encapsulated against moisture and oxygen on the substrate side, so that it can be used for use in organic light-emitting devices, especially in OLEDs.

[0060] The inventors recognized that the process described here offers a cost-effective solution with faster cycle times compared to inorganic metal oxide approaches. Furthermore, the curing process creates an inorganic planar layer. This inorganic planar layer is generated at low temperatures or using UV radiation.

[0061] Furthermore, the planar layer can be easily fabricated using liquid-phase processing. This combines the advantages of liquid-phase processing, such as speed and simple structured deposition, with the benefits of inorganic planar layers, such as the absence of outgassing from organic materials. In addition, this enables the production of a cost-effective, robust, and flexible organic light-emitting device, particularly an OLED.

[0062] The layers in this component are transparent compared to many polymers and silicon nitride-silicon carbide materials or their layer combinations, since polymers usually exhibit significant absorption behavior even in the visible spectrum. For example, when using metal foils, the metallic appearance at the edges of an organic light-emitting component is retained, which is desirable for automotive manufacturers. Furthermore, the transparency of the organic light-emitting component is not negatively affected when using polymer foils.

[0063] Compared to polymeric insulating layers, planarization layers have a lower coefficient of thermal expansion, resulting in improved stability of an organic light-emitting device under temperature stress. In particular, better interaction with an inorganic encapsulation, e.g., Al₂O₃, is possible.

[0064] The cured planarization layer exhibits excellent planarizing properties, resulting in a near-perfect mirror finish on deposited metal layers. A perfect mirror appearance is highly desirable for automotive manufacturers, even for flexible organic light-emitting components, as this effect is well-known for components on glass substrates and is considered a sign of exceptional quality. This is not always the case, for example, when using screen-printed polymer planarization insulation layers.

[0065] Furthermore, the adhesion of, for example, metallizations to the planarization layer is ensured. The flexible substrate is compatible with materials that can also be used in the production of glass-based rigid OLEDs.

[0066] An organic light-emitting component is further specified. Preferably, the organic light-emitting component is obtainable using the method described above. That is, all embodiments and definitions of the method are also valid for the organic light-emitting component and vice versa.

[0067] The organic light-emitting device comprises a substrate. The device has a first electrode arranged above the substrate. The device has at least one stack of organic functional layers configured for radiation emission and arranged at least above the first electrode. The device has a second electrode arranged above the stack of organic functional layers, which is preferably configured as a cathode. The device has a planarization layer. The planarization layer is arranged between the first electrode and the substrate, preferably in direct mechanical contact with the electrode and the substrate. Alternatively or additionally, the planarization layer is arranged above the second electrode, particularly as part of the encapsulation. The planarization layer is made of perhydropolysilazane or polysilazane.

[0068] In conjunction with top encapsulation, a hermetically encapsulated flexible OLED can be formed, whereby the substrate, which is particularly flexible, is fully compatible with the materials also used in the production of glass-based rigid OLEDs, such as metallization, due to the glass layer.

[0069] According to at least one embodiment, the organic light-emitting component has a planarization layer, wherein the planarization layer is structured.

[0070] The organic light-emitting device has a layered structure, wherein the layered structure comprises at least one layer pair (10), each layer pair consisting of the planarization layer (3) or a further planarization layer (31) and a layer (9) produced by atomic layer deposition or chemical vapor deposition or a further layer (91, 92, 93) produced by atomic layer deposition or chemical vapor deposition, wherein a further planarization layer (31) is arranged downstream of the at least one layer pair, such that an alternating sequence of planarization layer (3) or a further planarization layer (31) and layer (9) produced by atomic layer deposition or chemical vapor deposition or further layer (91, 92) produced by atomic layer deposition or chemical vapor deposition is generated.

[0071] According to at least one embodiment, the planarization layer of the organic light-emitting device has an RMS value of less than 200 nm, preferably less than 50 nm, and particularly preferably less than 10 nm. RMS denotes the squared roughness and can be determined by force measurement or atomic force microscopy (AFM). In particular, the planarization layer reduces the roughness.

[0072] Further advantages, embodiments and developments result from the exemplary embodiments described below in conjunction with the figures.

[0073] They show: The Fig. 1A, Fig. 1B, Fig. 2 and Fig. 3D each is a schematic representation of an organic light-emitting component according to an exemplary embodiment. The Fig. 3A to 3C and 4A to 5B each show a schematic representation of an organic light-emitting component according to an example.

[0074] In the exemplary embodiments and figures, identical, similar, or similarly functioning elements may be designated with the same reference numerals. The depicted elements and their relative sizes are not to be considered to scale. Rather, individual elements such as layers, components, building elements, and areas may be exaggerated for clarity and / or better understanding.

[0075] The Fig. Figure 1A shows a schematic side view of an organic light-emitting device 100 according to the exemplary embodiment. The device 100 was manufactured, in particular, using the method described above. The device comprises a substrate 1. In particular, the substrate 1 has a rough surface. A planarization layer 3, made of perhydropolysilazane or polysilazane, is arranged over the substrate 1. The planarization layer 3 can be applied by spin coating, slot die coating, spray coating, or inkjet printing. Depending on the curing conditions, different material properties result. The planarization layer can be cured by UV light, for example, with xenon light with a wavelength of 172 nm. This results in a very dense silicon oxynitride-like layer.Alternatively, the planarization layer can also be cured by means of temperature, resulting in a less dense silicon dioxide-like layer compared to the silicon oxynitride-like layer. A first electrode 2, an organic functional layer stack 5, and a second electrode 6 are arranged above the planarization layer 3.

[0076] The Fig. Figure 1B shows a schematic side view of an organic light-emitting component 100 according to the exemplary embodiment. The component 100 of the Fig. 1B differs from component 100 of the Fig. 1A by additionally having an encapsulation 7. Preferably, the encapsulation 7 has a further planarization layer 31. This further planarization layer 31 can also be applied by spin coating, slot die coating, spray coating or inkjet printing. Preferably, all embodiments described for the planarization layer 3 also apply to the further planarization layer 31 or the further planarization layers 31, 32, 33.

[0077] In other words, a component 100 can be provided that has a planarization layer 3 both between the substrate 1 and the first electrode 2 and over the second electrode 6. The planarization layers 3, 31 can act for planarization or as a barrier. The encapsulation 7 can have additional layers produced by ALD or CVD besides the further planarization layer 31.

[0078] The Fig. Figure 2 shows a schematic side view of an organic light-emitting device 100 according to the exemplary embodiment. The device 100 has a substrate 1. In particular, the substrate 1 is a metal foil or a plastic film and is hermetically sealed. A planarization layer 3 is applied in a structured manner over the substrate 1. The planarization layer 3 has a smaller lateral cross-sectional area than the substrate 1. A first electrode 2 and metallizations 8 are arranged over the planarization layer 3. Insulation is arranged between the first electrode 2 and the second electrode 6 to prevent a short circuit (not shown here). An organic functional layer stack 5 is arranged over the first electrode 2, and a second electrode 6 is arranged above that. The device 100 of the Fig. 2 also features an encapsulation 7. The component 100 of the Fig. Substrate 2 can have a further planarization layer 31, which can also be part of the encapsulation 7. The encapsulation 7 and the substrate 1 protect at least the organic functional layer stack 5 from environmental influences and form a hermetically sealed encapsulation. By applying the planarization layer 3 to the substrate surface 1, the substrate is compatible with other materials that are also used in the fabrication of glass-based rigid components. For example, there are now no adhesion problems between the metallization 8 and the planarization layer 3.

[0079] Furthermore, the planarization layer 3 can be applied using wet chemical methods, so that no restructuring is necessary.

[0080] The Fig. Figures 3A to 3C each show a layer structure according to an example. Fig. The 3D image shows a layer structure according to the exemplary embodiment. The layer structure exhibits both a planarizing and a barrier effect.

[0081] In Fig. Figure 3A shows a layer structure consisting of a layer pair 3 and 9. The layer pair 10 comprises a planarization layer 3 and a layer 9 produced by atomic layer deposition, which in particular contains a metal oxide. A further planarization layer 31 is arranged above the metal oxide layer.

[0082] In Fig. Figure 3B shows only one layer pair 10, wherein the layer 9 produced by atomic layer deposition is arranged above the planarization layer 3.

[0083] The Fig. Figure 3C shows the reverse case, where layer 9, produced by atomic layer deposition, is located below the planarization layer 3.

[0084] The layer 9 produced by atomic layer deposition (ALD) can also be produced by other methods, such as PVD, PECVD, or sputtering. ALD is preferably used because it allows for homogeneous layer growth and thus very good barrier properties.

[0085] In Fig. Figure 3D shows the structured application of a planarization layer 3, followed by the application of a layer 9 produced by atomic layer deposition. The layer 9 produced by atomic layer deposition completely surrounds both the surface and the sides of the planarization layer 3. A further planarization layer 31 is deposited downstream of the layer 9 produced by atomic layer deposition, forming a form-fit and material-bonded bond with both the sides and the surface of the layer 9 produced by atomic layer deposition.

[0086] The structuring can prevent or avoid the lateral penetration of environmental influences.

[0087] The Fig. Figure 4A shows a schematic side view of a layer pair according to an example. Compared to layer pair 10 of the Fig. 3A shows layer pair 10 of the Fig. 4A a layer pair consisting of a planarization layer 9 and a layer 9 produced by atomic layer deposition, wherein the planarization layer 3 is arranged between the layer 9 produced by atomic layer deposition and another layer 91 produced by atomic layer deposition.

[0088] In Fig. 4B is in comparison to the Fig. Figure 4A shows that the planarization layer 3 is applied in a structured manner.

[0089] The Fig. 5A and Fig. Figure 5B each shows a layer structure according to an example. Both figures show two layer pairs 10 consisting of a planarization layer 3 and a layer 9 produced by atomic layer deposition, or of another planarization layer 31 and another layer 91 produced by atomic layer deposition. A further layer 92 produced by atomic layer deposition is placed downstream of the two layer pairs 10, resulting in an alternating arrangement of planarization layer and layer produced by atomic layer deposition.

[0090] The layered structure of the Fig. 5B differs from the layer structure of the Fig.5A is achieved by the fact that the planarization layers 3 and 31 are applied in a structured manner. In other words, the planarization layers have a smaller lateral extent in cross-section compared to the layers 9, 91 and 92 produced by atomic layer deposition.

[0091] It is also possible to create layer structures with more than two layer pairs, for example three, four, five, six, seven, eight, nine, or ten layer pairs. This allows for the creation of a layer structure that, in addition to planarization, also exhibits a very good barrier effect.

[0092] The embodiments and their features described in connection with the figures can also be combined with one another according to further embodiments, even if such combinations are not explicitly shown in the figures. Furthermore, the embodiments described in connection with the figures can have additional or alternative features as described in the general section. Reference symbol list 1 substrate 10 layer pairs 100 organic light-emitting components 2 first electrode 3. Planarization layer 31 additional planarization layers 4 Perhydropolysilazane or polysilazane 5 organic functional layer stacks 6 second electrode 7 Encapsulation 8 Metallization 9 a layer produced using ALD 91 another layer produced using ALD

Claims

[1] Method for producing an organic light-emitting device (100) comprising the steps: A) Providing a substrate (1), B) Applying a first electrode (2) to the substrate (1), C) Application of at least one organic functional layer stack (5) designed to emit radiation and arranged at least above the first electrode (2), D) Applying a second electrode (6) over the organic functional layer stack (5), and E) Application of perhydropolysilazane (4) by wet chemical processes and curing of perhydropolysilazane (4) to produce at least one planarization layer (3) arranged between the first electrode (2) and the substrate (1), wherein a layer structure with at least one layer pair (10) is produced, wherein each layer pair (10) is formed from the planarization layer (3) and a layer (9) produced by atomic layer deposition or chemical vapor deposition, wherein the layer (9) produced by atomic layer deposition or chemical vapor deposition completely surrounds both the surface and the side faces of the planarization layer (3), wherein at least one layer pair (10) is followed by a further planarization layer (31), wherein the further planarization layer (31) surrounds both the side faces and the surfaces of the layer (9) produced by atomic layer deposition or chemical vapor deposition in a form-fitting and material-bonded manner, and wherein the first electrode (2) and metallizations (8) are arranged above the planarization layer (3). [2] Method according to claim 1, wherein the wet chemical method is selected from a group comprising slot die coating, spray coating, inkjet, screen printing, spin coating, gravure printing, flexographic printing and stencil printing. [3] Method according to at least one of the preceding claims, wherein a layer stack for encapsulation (7) is applied over the second electrode (6), comprising the planarization layer (3). [4] Method according to at least one of the preceding claims, wherein the curing in step E) takes place at a temperature greater than or equal to 80 °C. [5] Method according to at least one of the preceding claims 1 to 3, wherein the curing in step E) is carried out using UV light. [6] Method according to claim 5, wherein the UV light is xenon light with a wavelength of 172 + / - 3 nm. [7] Method according to at least one of the preceding claims, wherein the planarization layer (3) is arranged directly between the first electrode (2) and the substrate (1). [8] Method according to at least one of the preceding claims, wherein the planarization layer (3) is applied in a structured manner such that the planarization layer (3) has a smaller lateral extent in cross-section than the substrate, wherein the component has an encapsulation (7), wherein the planarization layer (3), the encapsulation (7) and the substrate (1) form a diffusion barrier against environmental influences. [9] Method according to at least one of the preceding claims, wherein the layer structure is part of an encapsulation. [10] Method according to at least one of the preceding claims, wherein the layer structure comprises more than two layer pairs (10) and the layers produced by atomic layer deposition processes are each formed from a metal oxide, carbide, nitride or metal nitride. [11] Method according to at least one of the preceding claims, wherein the substrate (1) is flexible. [12] comprising an organic light-emitting component (100) - a substrate (1), - a first electrode (2) which is arranged above the substrate (1), - at least one organic functional layer stack (5) designed to emit radiation and arranged at least above the first electrode (2), - a second electrode (6) arranged above the organic functional layer stack (5), and - a planarization layer (3) arranged between the first electrode (2) and the substrate (1), wherein the planarization layer (3) is made of perhydropolysilazane (4), wherein a layer structure comprises at least one layer pair (10), wherein each layer pair (10) is formed from the planarization layer (3) and a layer (9) produced by atomic layer deposition or chemical vapor deposition, wherein the layer (9) produced by atomic layer deposition or chemical vapor deposition completely surrounds both the surface and the side faces of the planarization layer (3), wherein at least one layer pair (10) is followed by a further planarization layer (31), wherein the further planarization layer (31) surrounds both the side faces and the surfaces of the layer (9) produced by atomic layer deposition or chemical vapor deposition in a form-fitting and material-bonded manner, and wherein the first electrode (2) and metallizations (8) are arranged above the planarization layer (3). [13] Component according to claim 12, wherein the planarization layer (3) is structured. [14] Component according to one of claims 12 to 13, wherein the planarization layer (3) has an RMS value of less than 200 nm.

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