Method for manufacturing a component and component for an electronic component

Abstract

Method for manufacturing a plurality of components (10) for electronic devices comprising the following steps: A) Providing a substrate (1); B) Applying a component composite (20) to the substrate; C) Forming an anchoring layer (30) on the component composite; D) Attaching a support (9) to the anchoring layer, wherein the anchoring layer is arranged between the substrate and the support; and E) Removal of the substrate, where - the component assembly is divided into a plurality of components by forming a plurality of separation trenches (4), - the components continue to be held on the support by the anchoring layer after the substrate has been removed, and - the anchoring layer has at least one predetermined breaking layer (36) with at least one predetermined breaking point (33), wherein the predetermined breaking point is laterally surrounded by the separation trenches and is covered in plan view of the beam by one of the components, wherein the predetermined breaking layer (36) is shaped such that it has a vertically extending area (36V) and a laterally extending area (36L), and wherein the vertically extending area and the laterally extending area form a bend in the predetermined breaking layer.

Description

[0001] A method for manufacturing one or more components for electronic devices is described. Furthermore, a component for an electronic device is specified.

[0002] When transferring components, especially thin-film semiconductor bodies, structures are preferred that hold the components securely on a substrate before they can be removed from the substrate in a controlled and reliable manner, for example, using an adhesive punch. Lateral anchor structures can be formed alongside the components for this purpose. However, these require a comparatively larger area as the components become smaller, because the lateral anchor structures must extend alongside the components. Alternatively, the anchor structures can be formed as delamination layers between the components and the substrate. In this case, when the components are removed, they detach from the substrate due to delamination at an interface between different materials. However, this method is often unreliable.

[0003] Publication US 2010 / 0301431A1 describes a method for manufacturing a plurality of semiconductor devices that are held by an anchoring layer on a substrate wafer or before the semiconductor devices are released from the substrate wafer by breaking the anchoring layer.

[0004] German patent application DE 102 46 053 A1 describes a method for singulating a substrate wafer into a plurality of substrate chips, wherein the substrate wafer is first temporarily connected to a carrier wafer via a passivation layer and a sacrificial layer, and wherein the passivation layer and the sacrificial layer are previously applied to the carrier wafer.

[0005] According to a method for manufacturing a plurality of components, particularly for electronic components, a component assembly is arranged on a substrate. The component assembly is then divided into a plurality of components.

[0006] An anchoring layer is arranged between the components and the support. The anchoring layer comprises one or more predetermined breaking layers, wherein predetermined breaking points are provided or formed in the predetermined breaking layer(s). The predetermined breaking layers are preferably designed to be mechanically breakable. In a top view of the support, the component completely covers its associated predetermined breaking layer or the predetermined breaking points. For example, in a top view, each component completely covers one of the predetermined breaking layers, with the predetermined breaking layers being spatially spaced apart from each other in lateral directions. When a component is removed, only one predetermined breaking layer or a plurality of the predetermined breaking points associated with the component is broken, in particular mechanically broken, so that the component can be selectively removed from the support.

[0007] A lateral direction is understood to be a direction that runs along, and in particular parallel to, a principal extensional surface of the component or beam. A vertical direction is understood to be a direction that is perpendicular or transverse to the principal extensional surface. The vertical direction and the lateral direction are thus perpendicular or essentially transverse to each other.

[0008] In at least one process for manufacturing a plurality of components, particularly for electronic devices, a substrate is provided. A component assembly is applied to the substrate. An anchoring layer is formed on the component assembly. A carrier is attached to the anchoring layer, the anchoring layer being positioned between the substrate and the carrier. The substrate is removed from the carrier or from the component assembly. Before or after the substrate is removed, the component assembly is divided into a plurality of components by forming a plurality of separation grooves. After the substrate is removed, the components continue to be held on the carrier by the anchoring layer. Due to the anchoring layer, the components are preferably arranged in an ordered manner on the carrier, even after the substrate has been removed.The anchoring layer has at least one predetermined breaking layer with at least one predetermined breaking point, wherein the predetermined breaking point is laterally surrounded by the separation trenches and is covered in plan view of the beam by one of the components.

[0009] The predetermined breaking layer is shaped in such a way that it has a vertically extending area and a laterally extending area, whereby the vertically extending area and the laterally extending area form a bend in the predetermined breaking layer.

[0010] The predetermined failure layer can have multiple predetermined failure points. The anchoring layer can also have multiple predetermined failure layers, each laterally surrounded by separation trenches. The predetermined failure layer or multiple predetermined failure layers are located between the beam and the structural components. In a top view of the beam, the predetermined failure layers are preferably completely covered by one of the structural components. For example, each structural component may be associated with a single or multiple predetermined failure layers. It is also possible that each predetermined failure layer may be associated with a single or multiple structural components.

[0011] The anchoring layer holds the components in an organized and either unstable or just sufficiently stable position on the support before they are removed individually or in groups for further processing steps. Because the predetermined breaking layers are located below the components and are partially or completely surrounded by the separation trenches between adjacent components, the separation trenches are free of predetermined breaking points or layers and can therefore be made particularly narrow. This means that no material from the component composite is unnecessarily removed for separating the components in the areas of the separation trenches.

[0012] According to at least one embodiment of the method, the anchoring layer is formed in multiple layers. The anchoring layer comprises a first sublayer facing the component assembly and a second sublayer facing away from the component assembly, the second sublayer forming the predetermined breaking point layer or the plurality of predetermined breaking points. The second sublayer is shaped, in particular, such that predetermined breaking points are provided or formed in the predetermined breaking point layer or layers. For example, a predetermined breaking point or a plurality of predetermined breaking points in the respective predetermined breaking point layer is formed, for instance, solely by shaping the geometry of the respective predetermined breaking points. In particular, the predetermined breaking point layer is designed such that, when the associated component is removed, the predetermined breaking point layer breaks or tears at the predetermined breaking point or points.In this sense, the predetermined breaking layer is designed to be mechanically breakable.

[0013] The predetermined breaking point is specifically designed such that a mechanical fracture can be achieved within a layer of the same material. The predetermined breaking point is not located at an interface between two layers of different materials. For example, the separation marks created by the fracture on both sides of the separated predetermined breaking point layer consist of the same material.

[0014] The predetermined breaking points in the predetermined breaking layer(s) can thus be precisely controlled via geometric factors, particularly the local layer thicknesses or step heights of the predetermined breaking layer(s). The design of such predetermined breaking layers with localized breaking points can be controlled much more accurately and reliably than the adhesion properties of delamination layers at the interfaces. The breaking strength, and therefore the reproducibility of the component(s) acceptance testing, is thus independent of process variations or adhesion at the interfaces. This significantly increases the reliability of the acceptance testing process.

[0015] According to at least one embodiment of the method, the first partial layer is applied to the component composite. A sacrificial layer is formed on the first partial layer. The second partial layer, or the predetermined breaking layer, is applied to the sacrificial layer, wherein the sacrificial layer is structured such that the predetermined breaking layer extends partially through the structured sacrificial layer, in particular down to the first partial layer. The structured sacrificial layer serves, in particular, to form the predetermined breaking layer with a predefined geometry such that the predetermined breaking layer has one or more predetermined breaking points due to the predefined geometry.

[0016] The sacrificial layer can be applied in a structured manner or initially as a flat layer onto the first sublayer and then structured in a subsequent process step such that the sacrificial layer has one or more openings. To facilitate the formation of a mechanical fracture at the predetermined fracture points, the sacrificial layer can be removed in a subsequent process step, in particular selectively removed. Specifically, the structured sacrificial layer is designed so that the predetermined fracture layer assumes, at least locally, a predefined geometry, such as a step or a lever arm with at least one fixed point.

[0017] According to at least one embodiment of the method, the separation trenches are created through the first partial layer of the anchoring layer. Along the vertical direction, the separation trenches can extend through the component assembly, thereby dividing the assembly into a plurality of components. In particular, the sacrificial layer is exposed, at least partially, in the separation trenches. The sacrificial layer can thus be accessed from the outside in the area of ​​the separation trenches. By introducing an etching agent, the sacrificial layer can be selectively removed. It is also possible for the separation trenches to be designed such that they extend completely through the anchoring layer, approximately to the support.

[0018] According to the claimed method, the predetermined breaking layer is shaped such that it has a vertically extending region and a laterally extending region. The vertically extending region and the laterally extending region form a bend, for example in the form of a step, in the predetermined breaking layer. At least one predetermined breaking point is provided in the vertically extending region of the predetermined breaking layer. For example, the predetermined breaking layer has a reduced lateral or vertical thickness at the predetermined breaking point compared to its adjacent regions. In particular, the vertically extending region and the laterally extending region of the predetermined breaking layer form a step, wherein the at least one predetermined breaking point is formed in the vicinity, for example in the immediate vicinity, of a corner of the step. Several predetermined breaking points can be formed in the predetermined breaking layer.In particular, the predetermined breaking points form a closed or an open frame that encloses the laterally extending area of ​​the predetermined breaking layer.

[0019] Alternatively or additionally, at least one predetermined breaking point can be provided or formed in the laterally extending region of the predetermined breaking layer. For example, the vertically extending region has a greater local layer thickness compared to the laterally extending region, with the laterally extending region serving as a lever arm and the vertically extending region as its fixed point, so that the laterally extending region of the predetermined breaking layer is breakable, in particular mechanically breakable, when a lever force is applied. The predetermined breaking layer can have several such fixed points, for example, two such fixed points, with the laterally extending region of the predetermined breaking layer extending between the fixed points. When the component is removed, the predetermined breaking layer is pulled upwards along the vertical direction, with the laterally extending region continuing to be held in place by the vertically extending region, which serves as the fixed point.By applying a sufficiently large leverage force, the laterally extending area of ​​the predetermined breaking layer can be torn, i.e., mechanically broken.

[0020] According to at least one embodiment of the method, the components are selectively removed from the carrier by locally mechanically fracturing the predetermined breaking point layer at the predetermined breaking points. A punch adhering to the component(s) can be used for this purpose.

[0021] In at least one embodiment of a component, which can be manufactured in particular by the method described above, the component comprises a main body and a support layer. In particular, the support layer is formed as part of the anchoring layer described here. The support layer has a surface facing away from the main body, which exhibits separation marks from a mechanical fracture. In particular, the surface of the support layer with the separation marks is an exposed surface of the component.

[0022] The process described above is particularly suitable for manufacturing the component described here. The characteristics described in connection with the component can therefore be used for the process, and vice versa.

[0023] The component can be a converter plate. The converter plate contains an optically active material designed to convert light of a first peak wavelength into light of a second peak wavelength different from the first. The material can contain phosphors, for example, in the form of phosphor particles. The phosphors or phosphor particles can be embedded in a matrix material of the main body. A phosphor is an optically active material designed to convert short-wavelength radiation components, such as blue or ultraviolet radiation, into long-wavelength radiation components, such as yellow, green, or red radiation. In addition to the phosphors, the main body can contain radiation-reflecting or radiation-scattering particles.

[0024] It is possible that the optically active material is a crystalline material. Such a material can be epitaxially grown onto the substrate. The crystalline material is particularly susceptible to optical excitation. For example, if the crystalline material is optically pumped with pump radiation, it can emit electromagnetic radiation whose peak wavelength differs from that of the pump radiation. The main body of the converter plate is specifically free of phosphors in the form of phosphor particles and can consist of the optically active crystalline material.

[0025] Alternatively, the component can be an electronic or optoelectronic semiconductor device, with the main body potentially comprising multiple semiconductor layers. For example, the main body may have a first semiconductor layer, a second semiconductor layer, and an intermediate active layer, the active layer being configured, in particular, for the emission or detection of electromagnetic radiation. The main body may be based on a III-V or a II-VI compound semiconductor material. It is possible for the main body to be electrically contactable via the substrate layer. For this purpose, the substrate layer may be at least partially composed of an electrically conductive material. The component may also have electrical connection layers extending through the substrate layer.In this case, the carrier layer may have an electrically insulating layer that covers the main body except for electrical connection points of the connection layers, in particular completely covers it.

[0026] According to at least one embodiment of the component, the support layer comprises a first sublayer and a second sublayer, the first sublayer being arranged between the main body and the second sublayer. The second sublayer covers the first sublayer and the main body, in particular only partially. For example, the separation marks are present exclusively on surfaces of the second sublayer.

[0027] Partial coverage of the first sublayer by the second sublayer can mean that at most 5%, 10%, 20%, 30%, 40%, 50%, or at most 70% of the surface of the first sublayer facing away from the main body is covered by the second sublayer. In this case, the surface of the support layer facing away from the main body, particularly the exposed surface, is formed partly by surfaces of the first sublayer and partly by surfaces of the second sublayer.

[0028] According to at least one embodiment of the component, the substrate layer is formed at least partially or completely from a dielectric material or materials. For example, the first sublayer completely covers the main body except for possible electrical connection points. It is possible that the first sublayer is partially removed to expose these electrical connection points. The surface of the substrate layer exhibiting the separation marks can serve as the mounting surface for the component. Alternatively, the substrate layer can be formed at least partially or completely from metal. For example, the first sublayer can be electrically insulating and the second sublayer electrically conductive, or vice versa.It is also possible that the first sublayer and the second sublayer of the carrier layer are made of one electrically conductive material or of different electrically conductive materials.

[0029] According to at least one embodiment of the component, the main body is a semiconductor body. The substrate layer can be at least partially formed from an electrically conductive material, with the main body being electrically contactable via the substrate layer. For example, the second sublayer is formed from a metal, with the main body being electrically contactable via the second sublayer. The first sublayer can be formed from an electrically insulating material. Alternatively, it is possible for both the first and second sublayers to be formed from an electrically conductive material or from different electrically conductive materials.

[0030] According to at least one embodiment of the component, the support layer is designed to support the main body. In other words, the support layer forms a support for the component. In particular, the support layer forms a single support for the component. The component can be free of a growth substrate. Preferably, the first sublayer is designed as a mechanically stabilizing layer of the support layer. As a mechanically stabilizing layer, the first sublayer is designed with respect to its material and thickness such that it is a self-supporting layer and mechanically stabilizes the component in such a way that the component does not deform, or does not deform significantly, under its own weight.

[0031] Further advantages, preferred embodiments and further developments of the component or the method result from the following in conjunction with the Fig. Examples of implementation were explained in sections 1 to 5B. They show: Fig. 1A, Fig. 1B and Fig. 1C Schematic sectional views of various process stages of an exemplary embodiment for the production of a plurality of components, Fig. 2A, Fig. 2B, Fig. 2C, Fig. 2D, Fig. 2E, Fig. 2F and Fig. 2G schematic sectional views of further process stages for the production of one or more components, which are used, for example, in the Fig. 2G are shown schematically, Fig. 3A and Fig. 3B Further representations of process steps, in which several components to be manufactured are schematically depicted, Fig. 4A, Fig. 4B, Fig. 4C, Fig. 4D, Fig. 4E, Fig. 4F, Fig. 4G, Fig. 4H, Fig. 41 and Fig. 4J Schematic sectional views of some process stages of another process for manufacturing one or more components, which are used, for example, in the Fig. 4J are shown schematically, and Fig. 5A and Fig. 5B Further representations of process steps, in which several components to be manufactured are schematically depicted.

[0032] It will be in Fig. In step 1A, a substrate 1 is provided. A component assembly 20 is arranged on the substrate 1. In a subsequent process step, the component assembly 20 can be separated into a plurality of main bodies 2 of the components 10 to be manufactured. The main body 2 or the component assembly 20 can be a semiconductor body with a plurality of semiconductor layers. In this case, the substrate 1 can be a growth substrate on which the semiconductor layers have been grown, for example, epitaxially. The growth substrate 1 can be a wafer substrate such as a sapphire substrate, a silicon substrate, or a substrate made of another semiconductor material. Alternatively, the component assembly 20 is a converter plate assembly. In this case, the substrate 1 can be different from a growth substrate.

[0033] According to Fig. In step 1B, an anchoring layer 30 is applied to the component assembly 20. For this purpose, a first sublayer 34 is formed, approximately covering the entire surface of the component assembly 20. In particular, the first sublayer 34 serves as an etch stop layer. For example, the first sublayer 34 is made of a dielectric material such as silicon dioxide or of a metal such as aluminum, nickel, chromium, platinum, gold, or of mixtures or alloys thereof. If the component assembly 20 or the main body 2 is a semiconductor, the first sublayer 34, which is particularly electrically conductive, can be in electrical contact with the semiconductor body 2. It is also possible for the first sublayer 34 to be electrically insulating and to cover, or in particular completely cover, the semiconductor body 2 or the component assembly 20 except for possible electrical connection points.

[0034] It will be in the Fig. In step 1C, a sacrificial layer 35 is applied to the first sublayer 34. The sacrificial layer 35 can be formed on the first sublayer 34 by a coating process. Preferably, the first sublayer 34 is formed from a material that is more corrosion-resistant than a material of the sacrificial layer 35. The sacrificial layer 35 can be formed from a material such as germanium or silicon.

[0035] According to Fig. In step 2A, an intermediate layer 38 is applied to the sacrificial layer 35. The intermediate layer 38 and the first sublayer 34 can be made of the same material, for example silicon dioxide.

[0036] According to Fig. In step 2B, the intermediate layer 38 is structured to partially expose the sacrificial layer 35. A lithography process, a dry etching process, or reactive ion etching, particularly with chlorine or fluorine as the etchant, can be used for this purpose. The exposed areas of the sacrificial layer 35 can then be partially removed using a wet chemical etching process. An opening 7 or a plurality of openings 7 is formed, with the opening 7 extending along the vertical direction through the intermediate layer 38 and the sacrificial layer 35, for example, to the first sublayer 34. In the area of ​​the opening 7, the intermediate layer 38 projects laterally beyond the sacrificial layer 35. The intermediate layer 38 and the sacrificial layer 35 form a step in the area of ​​the opening, with the intermediate layer 38, viewed from above, completely covering the sacrificial layer 35. Fig. Figure 2B shows only a section of the anchoring layer 30. The anchoring layer 30 can have multiple such openings 7.

[0037] It will be in the Fig. 2C applied a second partial layer 36 of the anchoring layer 30 to the component composite 20. In the Fig. 2C The second sublayer 36 borders the first sublayer 34 in the area of ​​the opening 7. In particular, the second sublayer 36 borders the intermediate layer 38 both inside and outside the opening 7. Due to the lateral overhang of the intermediate layer 38 over the sacrificial layer 35, intermediate areas B are formed, which are arranged laterally between the sacrificial layer 35 and the second sublayer 36. In particular, the anchoring layer 30 or the second sublayer 36 has the smallest thickness in the intermediate areas B. In other words, the second sublayer 36 has a reduced thickness at the edges of the opening 7 due to the step formed by the intermediate layer 38 and the sacrificial layer 35 and the lateral overhang of the intermediate layer 38 over the sacrificial layer 35, and thus mechanical weak points. The mechanical weak points form predetermined breaking points 33 of the second sublayer 36.

[0038] Due to the forming process, the second sublayer 36 exhibits steps at the edges of the opening 7, formed by vertically extending regions 36V and laterally extending regions 36L of the second sublayer 36. A laterally extending region 36L and its corresponding vertically extending regions 36V in the area of ​​an opening 7 form a predetermined breaking layer. In this sense, the second sublayer 36 is partially designed as a predetermined breaking layer and can thus have a corresponding predetermined breaking layer 36 for each opening 7.

[0039] Due to the special geometry, internal cracks R, especially internal nanocracks or microcracks, can form, for example in the vicinity of the corner of the step or the corners of the steps. The vertically running areas 36V (see Fig. 2D) also form mechanical weak points of the second sublayer 36 in this sense. The second sublayer 36 is thus formed, at least in some areas, as a predetermined breaking layer 36 of the anchoring layer 30, with the predetermined breaking points 33 being formed in the vertically extending areas 36V of the predetermined breaking layer 36. The cracks R are formed at the edges of the opening 7 or openings 7 due to the geometry of the predetermined breaking layer 36. Alternatively or additionally, such cracks R can be deliberately incorporated into other sub-areas of the predetermined breaking layer 36. Within the opening 7, the predetermined breaking layer 36 has a laterally extending area 36L (see Fig. 2E), which is enclosed in a frame-like manner, in particular by the vertically running areas 36V.

[0040] According to Fig. In 2D, a support 9 is attached, in particular by means of a bonding layer 5, for example by means of a solder layer made of NiInSn, to the anchoring layer 30. The component assembly 20 and the anchoring layer 30 are thus arranged in the vertical direction between the substrate 1 and the support 9. In the areas of the openings 7, gaps are formed which are each enclosed, in particular completely enclosed, by the support 9 and the predetermined breaking layer 36.

[0041] According to Fig. 2E the substrate 1 is removed from the component assembly 20 or from the support 9, for example by means of a laser lifting process, a chemical or a mechanical process.

[0042] According to Fig. In step 2F, the remaining sections of the sacrificial layer 35 are completely removed. For this purpose, separation trenches 4 can be created through the component assembly 20 and the first sub-layer 34, thereby making the sacrificial layer 35 accessible in the separation trenches 4 (compare Fig. 3A). The remaining parts of the sacrificial layer 5 can be removed, in particular completely removed, by a wet chemical process or by an etching process using XeF2 or SF6.

[0043] It will be in the Fig. 2G A component 10 is selectively and preferably separated from the carrier 9 by local mechanical breaking of the predetermined fracture layer 36, particularly at the predetermined fracture points 33. The predetermined fracture layer 36 is broken at its mechanically weak points and thus exhibits separation marks T on its surface. The separation marks T, which result from the mechanical breaking or tearing of the predetermined fracture layer 36, are characteristic of the separation process and can be detected on the finished component 10.

[0044] Component 10 comprises a main body 2 as part of the component assembly 20 and a support layer 40 as part of the anchoring layer 30. The component has a front surface 11 and a back surface 12, the front surface 11 being formed by a surface of the main body 2 and the back surface 12 by a surface of the support layer 40. The back surface 12 thus has separation marks T, which are completely covered by the main body 2 in plan view. The back surface 12 is formed in certain areas by the surface of a first sub-layer 34 or 44 and in certain areas by the surface of a second sub-layer 36 or 46 of the support layer 40.

[0045] The first sublayer 44 of the carrier layer 40 is part of the first sublayer 34 of the anchoring layer 30 and has a first surface 31 facing the main body 2 and a second surface 32 facing away from the main body 2. The second sublayer 46 of the carrier layer 40 is part of the second sublayer 36 or the predetermined breaking layer 36 of the anchoring layer 30 and has a first surface 41 facing the main body 2 and a second surface 42 facing away from the main body 2. The back side 12 is thus formed in some areas by the second surface 32 of the first sublayer 34 or 44 and in some areas by side surfaces and the second surface 42 of the second sublayer 46 of the carrier layer 40.

[0046] As in the Fig. As shown in Figure 2G, the separation traces T are located exclusively on the surface, specifically exclusively on the side faces of the second sublayer 46. The first sublayer 44 is therefore free of the separation traces T. The first sublayer 44 and the second sublayer 46 can be made of the same material or of different materials.

[0047] Component 10 is, in particular, an electronic or optoelectronic component. The main body 2 can be a semiconductor body comprising a first semiconductor layer 21, a second semiconductor layer 22, and an intermediate active layer 23. The active layer 23 can be configured to emit or detect electromagnetic radiation in the infrared, visible, or ultraviolet spectral range. The main body 2 can be electrically contactable externally via the substrate 40. For electrical contacting of the first semiconductor layer 21 via the substrate 40, the main body 2 can have one or more vias (not shown here), the via extending through the second semiconductor layer 22 and the active layer 23 to the first semiconductor layer 21.

[0048] For example, both the first sublayer 44 and the second sublayer 46 of the carrier layer 40 can be made of an electrically conductive material. Alternatively, it is possible that only one of the sublayers 44 or 46 is electrically conductive, while the other sublayer is electrically insulating. In a top view, the first sublayer 44 completely covers the main body 2, except for possible electrical connection points. The second sublayer 46 only partially covers the main body 2 or the first sublayer 44.

[0049] Contrary to the Fig. In 2G, it is also possible that component 10 is a converter plate. In this case, the main body 2 may contain phosphors, for example in the form of phosphor particles, which are embedded in a matrix material of the main body 2. The main body 2 may contain light-reflecting scattering particles. It is also possible that the main body 2 of the converter plate contains or consists of an optically active crystalline material.

[0050] The first sublayer 44 is preferably configured as a mechanically stabilizing layer of the carrier layer 40. For example, the first sublayer 44 has an average vertical thickness that is at least three times, at least five times, 10 times, or at least 20 times greater than the average vertical thickness of the second sublayer 46. For example, the second sublayer 46, or the predetermined breaking layer 36, has a vertical thickness between and including 1 µm and 10 µm, between and including 1 µm and 5 µm, or between and including 1 µm and 3 µm.

[0051] The one in Fig. The embodiment shown in 3A for a process step essentially corresponds to that in the Fig. 2E illustrated embodiment. In contrast, several main bodies 2 are shown, which are spatially separated from one another by a plurality of separation trenches 4. The separation trenches 4 extend along the vertical direction through the component assembly 20 and the first partial layer 34. In the Fig. In section 3A, the intermediate layer 38 in the separation trenches 4 is partially exposed. Alternatively, it is also possible that the separation trenches 4 only extend as far as the sacrificial layer 35. The sacrificial layer 35 can be removed, in particular completely removed, by introducing an etching agent into the separation trenches 4, whereby the first sublayer 34 and the intermediate layer 38 as well as the second sublayer 36 can serve as etching stop layers.

[0052] Beneath each main body 2, the second sublayer 36 is formed in a stepped manner, wherein a vertically extending region 36V of each step has a reduced layer thickness compared to a laterally extending region 36L of the associated step, thereby forming the predetermined breaking points 33 in the vertically extending regions 36V of the second sublayer 36, which is formed at least partially as a predetermined breaking layer. As in the Fig. 3A and Fig. As shown in Figure 3B, the second sub-layer 36 remains continuous even after the removal of the sacrificial layer 35. The second sub-layer 36 comprises multiple sub-areas, each of which is covered, or in particular completely covered, by one of the components 10 to be manufactured. These sub-areas form the predetermined failure layers 36, each associated with one of the components 10. The second sub-layer 36 also includes further sub-areas located vertically between the support 9 and the intermediate layer 38, overlapping the separation trenches 14. These further sub-areas serve primarily as anchoring structures that hold the components 10 to be manufactured either in a loosely or with just sufficient stability on the support 9 before the components 10 are selectively removed from the support 9.

[0053] The one in Fig. The embodiment of a process step shown in 3B essentially corresponds to that described in the Fig. 2G illustrated embodiment. In contrast, in the Fig. 3B a plurality of components 10 are shown on the common support 9, wherein the components 10 can be selectively separated from the support 9 individually or in groups, for example by means of an adhering punch 6.

[0054] The one in Fig. The embodiment shown in 4A essentially corresponds to the one described in the Fig. The embodiment shown in Figure 1C represents a process step. In contrast, the sacrificial layer 35 is structured and has an opening 7. In the Fig. 4A shows only a section of the component assembly 20 and the anchoring layer 30. The sacrificial layer 35 can have a plurality of such openings 7.

[0055] It will be in the Fig. 4B the second sublayer 36 is applied to the sacrificial layer 35, the second sublayer 36 filling the opening 7 or the plurality of openings 7. In a top view of the sacrificial layer, the second sublayer 36 may initially completely cover the sacrificial layer. In contrast to the one in the Fig. In the embodiment shown in 2C, in which the second sublayer 36 is partially stepped and has both a stepped surface facing the first sublayer 34 and a stepped surface applied to the first sublayer 34, the Fig. 4B shows the second sublayer 36 as a surface facing away from the first sublayer 34, which is flat or substantially flat.

[0056] According to Fig. 4C, the second sublayer 36 is structured to form a plurality of predetermined fracture layers 36, for example by means of a dry etching process or a wet chemical etching process. The predetermined fracture layer 36 is shaped in particular such that it has a vertically extending region 36V and a laterally extending region 36L, wherein at least one predetermined fracture point 33 is provided or formed in the laterally extending region 36L. In the Fig. Figure 4C shows only a section of the component assembly 20 in the area of ​​a main body 2. In plan view, the main body 2 of the component 10 to be manufactured can completely cover the associated predetermined fracture layer 36. A plurality of such predetermined fracture layers 36 can be formed, spaced laterally apart from one another. In particular, the predetermined fracture layers 36 are each assigned to one of the components 10 to be manufactured.

[0057] As in the Fig. As shown in Figure 4D, the vertically extending region 36V has an increased local layer thickness D36V compared to the laterally extending region 36L. The laterally extending region 36L has a reduced vertical layer thickness D36L, whereby the laterally extending region 36L can serve in particular as a lever arm and the vertically extending region 36V as its fixed point. Preferably, the laterally extending region 36L is designed to be breakable when a lever force is applied. In this sense, at least one predetermined breaking point 33 or several predetermined breaking points 33 are formed in the laterally extending region 36L of the predetermined breaking layer 36.

[0058] It will be in the Fig. 4D, a further sacrificial layer 37 is applied to the predetermined failure layer 36 and the sacrificial layer 35. The further sacrificial layer 37 borders the sacrificial layer 35 and the predetermined failure layer 36. The further sacrificial layer 37 is according to Fig. 4E is structured and has a further opening 8 in which the predetermined breaking layer 36, in particular the laterally extending area 36L of the predetermined breaking layer 36, is partially exposed. Analogous to the first sacrificial layer 35, the further sacrificial layer 37 can initially be applied over the entire surface of the component assembly 20 and subsequently structured. Alternatively, it is also possible for the further sacrificial layer 37 to be applied in a structured manner, for example with the aid of masks.

[0059] It will be in the Fig. 4F a finishing layer 39 of the anchoring layer 30 is formed, wherein the finishing layer 39 fills the opening 8 or a plurality of openings 8. In particular, the finishing layer 39 borders the laterally extending area 361 of the respective predetermined fracture layers 36 in the area of ​​the further opening 8 or further openings 8. The predetermined fracture layer 36 thus has a laterally extending area 36L designed as a lever arm, which borders two fixed points.

[0060] According to Fig. In step 4G, the component assembly 20 and the anchoring layer 30 are attached to a support 9, for example by means of a bonding layer (not shown here). In a subsequent process step, the substrate 1 is separated from the component assembly 20 ( Fig. 4H). The sacrificial layer 35 and the further sacrificial layer 37 can be subsequently removed, in particular completely removed ( Fig. 4I), for example, after the separation trenches 4 are created to isolate the component assembly 20 (compare Fig. 5A). The components 10 can be separated individually or in groups from the carrier 9, for example with the help of a punch 6 ( Fig. 4 years and Fig. 5B).

[0061] The in the Fig. 4H, Fig. 4I, Fig. 4 years Fig. 5A and Fig. The process steps shown in section 5B essentially correspond to those described in the Fig. 2E, Fig. 2F, Fig. 2G, Fig. 3A and Fig. The procedural steps described in section 3B. The steps related to the Fig. The features disclosed in sections 2E to 3B can therefore also be applied to those related to the Fig. The process steps shown in sections 4H to 5B can be used and vice versa. Similarly, the first sublayer 34, the predetermined breaking layer 36, and the final layer 39 can be made of an electrically insulating material such as SiO2 or of an electrically conductive material, such as a metal like Al, Ni, Cr, Pt, or Au, or partially of an electrically conductive and partially of an electrically insulating material.

[0062] The one in Fig. The substrate layer 40 shown in Figure 4J comprises a first sublayer 44 and a second sublayer 46. Sublayers 44 and 46 can each be made of an electrically insulating or an electrically conductive material. The second sublayer 46 has a vertically extending region with an increased vertical thickness and a laterally extending region with a reduced thickness and is L-shaped. In particular, the separation tracks T are located exclusively on one side surface of the second sublayer 46.

[0063] In the Fig. 5A and Fig.5B The separation trenches 4 extend vertically through the component assembly 20 and the anchoring layer 30 to the final layer 39. It is possible that the separation trenches 4 are initially formed such that they extend only through the component assembly 20 and the first sub-layer 34 of the anchoring layer 30 to the sacrificial layer 35. By adding an etching agent, the sacrificial layer 35 and the further sacrificial layer 37 can be removed, in particular completely removed, thereby creating vertical gaps between the predetermined failure layer 36 and the first sub-layer 34, as well as between the predetermined failure layer 36 and the final layer 39. In particular, the predetermined failure layer 36 borders in some areas both the first sub-layer 34 and the final layer 39.

[0064] The final layer 39 serves in particular as an etch stop layer and can also be formed continuously after the removal of the sacrificial layers 35 and 37. In particular, the components 10 to be produced will be held on the support 9 either unstably or with just sufficient stability before the components 10 are selectively removed from the support 9, for example by means of the adhering punch 6.

[0065] The first sub-layer 34 and the second sub-layer 36 are each divided by the separation trenches 4 into a plurality of laterally spaced sub-areas of the anchoring layer 30. The sub-areas of the anchoring layer 30 are each assigned to one of the components 10 to be manufactured, wherein each sub-area of ​​the anchoring layer 30 is covered, in particular completely covered, by one of the components 10 to be manufactured. Reference symbol list 1 substrate 10 components 11 Front side of the component 12 Back of the component 2 Main body of the component 20 Component composite 21 first semiconductor layer 22 second semiconductor layer 23 active layer 30 Anchoring layer 31 Surface of the first sublayer 32 Surface of the second sublayer / the predetermined breaking layer 33 Breakaway point 34 first sub-layer of the anchoring layer 35 victim layer 36 Failure layer or second sub-layer of the anchoring layer 36V vertically running area of ​​the predetermined breaking layer 36L laterally extending area of ​​the predetermined breaking layer 37 more victims 38 Intermediate layer of the anchoring layer 39 Final layer of the anchoring layer 4 Separation trench 40 Support layer of the component 41 Surface of the first sublayer of the support layer 42 Surface of the second sublayer of the support layer 44 first sublayer of the carrier layer 46 second sublayer of the carrier layer 5. Compound layer 6 stamps 7 Opening 8 more openings 9 carriers D36V local layer thickness of the vertically running area of ​​the predetermined breaking layer D36L local layer thickness of the laterally extending area of ​​the predetermined breaking layer B Intermediate area R cracks T Separation marks

Claims

[1] Method for manufacturing a plurality of components (10) for electronic devices comprising the following steps: A) Providing a substrate (1); B) Applying a component composite (20) to the substrate; C) Forming an anchoring layer (30) on the component composite; D) Attaching a support (9) to the anchoring layer, wherein the anchoring layer is arranged between the substrate and the support; and E) Removal of the substrate, where - the component assembly is divided into a plurality of components by forming a plurality of separation trenches (4), - the components continue to be held on the support by the anchoring layer after the substrate has been removed, and - the anchoring layer has at least one predetermined breaking layer (36) with at least one predetermined breaking point (33), wherein the predetermined breaking point is laterally surrounded by the separation trenches and is covered in plan view of the beam by one of the components, wherein the predetermined breaking layer (36) is shaped such that it has a vertically extending area (36V) and a laterally extending area (36L), and wherein the vertically extending area and the laterally extending area form a bend in the predetermined breaking layer. [2] Method according to claim 1, wherein the anchoring layer (30) is formed in multiple layers and has a first partial layer (34) facing the component assembly (20) and the predetermined breaking layer (36) facing away from the component assembly, wherein predetermined breaking points (33) are provided in the predetermined breaking layer. [3] Method according to the preceding claim, wherein - the first partial layer (34) is applied to the component composite (20), - a sacrificial layer (35) is formed on the first sub-layer, - the predetermined failure layer (36) is applied to the sacrificial layer, the sacrificial layer being structured in such a way that the predetermined failure layer extends in certain areas through the structured sacrificial layer to the first sublayer, and - the sacrificial layer (35) is removed to facilitate the formation of a mechanical fracture at the predetermined breaking points (33). [4] Method according to one of claims 2 or 3, wherein the separation trenches (4) are produced through the first partial layer (34) of the anchoring layer (30). [5] Method according to one of the preceding claims, wherein the at least one predetermined breaking point (33) is formed in the vertically extending area (36L). [6] Method according to the preceding claim, wherein the vertically extending region (36V) and the laterally extending region (36L) form a step, wherein the at least one predetermined breaking point (33) is formed in the vicinity of a corner of the step. [7] Method according to any one of claims 1 to 4, wherein the at least one predetermined breaking point (33) is formed in the laterally extending area. [8] Method according to the preceding claim, wherein the vertically extending area (36V) has an increased local layer thickness (D36V) compared to the laterally extending area (36L), wherein the laterally extending area serves as a lever arm and the vertically extending area as its fixed point, such that the laterally extending area is designed to be breakable when a lever force is applied. [9] Method according to one of the preceding claims, wherein the components (10) are selectively removed from the carrier (9) by local mechanical breaking of the predetermined breaking layer (36) at the predetermined breaking points (33). [10] Component (10) for an electronic component, wherein - the component has a main body (2) and a support layer (40), wherein a surface (32, 42) of the support layer facing away from the main body has separation marks (T) of a mechanical fracture, - the carrier layer (40) has a sublayer (46) of an anchoring layer (36), and - the separation traces (T) are located exclusively on one side surface or on side surfaces of the sublayer (46) and are completely covered by the main body (2) in top view. [11] Component according to claim 10, which is a converter plate comprising an optically active material which is configured to convert light of a first peak wavelength into light of a second peak wavelength different from the first peak wavelength. [12] Component according to claim 10, which is an electronic or an optoelectronic semiconductor component, wherein the main body (2) has a plurality of semiconductor layers. [13] Component according to one of claims 10 to 12, wherein the support layer (40) has a further sublayer (34, 44) next to the sublayer (36, 46), wherein - the further sublayer is arranged between the main body (2) and the sublayer, - the sublayer only partially covers the next sublayer and the main body. [14] Component according to claim 13, wherein the support layer (40) is formed from a dielectric material or dielectric materials, wherein - the further sublayer (34, 44) completely covers the main body (2) except for possible electrical connection points, and - the surface (32, 42) with the separation marks (T) is designed as the mounting surface of the component. [15] Component according to claim 13, wherein the main body (2) is a semiconductor body and the support layer (40) is at least partially formed from an electrically conductive material, wherein the main body can be electrically contacted via the support layer. [16] Component according to any one of claims 13 to 15, in which the support layer (40) supports the main body (2) and the further sublayer (34, 44) is designed as a mechanically stabilizing layer of the support layer.

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