Sensor device and manufacturing method for a sensor device with at least one chemical or electrochemical detection device

Abstract

Sensor device with: a substrate (10); and at least one chemical or electrochemical detection device (12) formed on and / or in the substrate (10), which has a detection opening (14) structured in the substrate (10) and is configured such that the presence of at least one material to be detected in the detection opening (14) causes a change in a first sensor signal output by or tapped from the detection device (12); characterized in that the detection opening (14) comprises access openings (16) structured by a first side (10a) of the substrate (10) and a first cavity (18) into which the access openings (16) open, wherein the sensor device further comprises at least one additional sensing device (26) formed on and / or in the substrate (10), and wherein a second cavity (28) is formed in the substrate (10) adjacent to the sensing device (26),in which structured connecting openings (30) open through the first side (10a) of the substrate (10), and wherein the further sensing device (26) has a sensitive surface (34) located on a second side (10b) of the substrate (10) facing away from the first side (10a) and is configured such that a change in at least one physical quantity at the sensitive surface (34) causes a change in a second sensor signal output by or tapped from the sensing device (26), and wherein the further sensing device (26) is a pressure and / or sound detection device (26) which has a membrane component (36) that covers a third cavity (38) formed in the substrate (10) such that the membrane component (36) is activated by means of a pressure change at its sensitive surface (34) facing away from the third cavity (38) as the change in at least one physical quantity. or is bulgeable.

Description

The invention relates to a sensor device and a manufacturing method for a sensor device with at least one chemical or electrochemical detection device. State of the art A reactive ionic deep etching process is known from the prior art, as described, for example, in DE 42 41 045 C1. The reactive ionic deep etching process can be understood as a two-stage, alternating dry etching process in which etching and passivation steps alternate. Further prior art is disclosed in the patent applications DE 10 2014 223 778 A1 , DE 10 2015 223 399 A1 , DE 10 2004 043 356 A1 and DE 10 2008 040 970 A1. Disclosure of the invention The present invention provides a sensor device with the features of claim 1 and a manufacturing method for a sensor device with at least one chemical or electrochemical detection device with the features of claim 3. Advantages of the invention The present invention provides sensor devices, each comprising at least one chemical or electrochemical detection element, which, due to the shape of its detection opening, is advantageously suited for detecting the at least one material to be detected. A significant advantage of the shape of the detection opening, which includes the access openings and the first cavity, is a prevailing capillary pressure within it. This pressure reliably prevents the escape of at least one detection material filled into the detection opening, which, for example, is used for specific interaction with the at least one material to be detected. The capillary pressure can even counteract the evaporation of a liquid used as the at least one detection material.Another advantage of the detection aperture shape is the relatively large surface area that can be formed on the sidewalls of the access openings, which can be used, for example, to create electrodes. Furthermore, the access openings can be used as a mask for depositing small spots on the bottom of the first cavity, facing away from the first side of the substrate. The spots formed in this way are particularly advantageous as electrodes for chemical or electrochemical detection devices, as they have a comparatively low capacitance but a relatively large radius for "capturing" the at least one material to be detected. Despite its advantageous shape, the detection aperture of the chemical or electrochemical detection device of the sensor device according to the invention, comprising the access openings and the first cavity, is comparatively easy to manufacture. An advantageous method for manufacturing the sensor device according to the invention, with the chemical or electrochemical detection device having the advantageously shaped detection aperture, will be discussed below. According to the invention, the sensor device comprises at least one further sensing element formed on and / or in the substrate, wherein a second cavity is formed in the substrate adjacent to the sensing element, into which connecting openings structured by the first side of the substrate open. The second cavity and the connecting openings structured by the first side of the substrate provide a mechanical decoupling structure for the further sensing element against externally acting mechanical stress. By forming the mechanical decoupling structure, the influence of mechanical stress on the operation of the further sensing element can be counteracted. In this way, the detection accuracy of the further sensing element can be increased and its error rate reduced.As explained in more detail below, the same process steps can also be used to form the detection aperture comprising the access openings and the first cavity, and to simultaneously form the mechanical coupling structure comprising the connecting openings and the second cavity. Therefore, forming the mechanical decoupling structure does not involve any additional effort in this embodiment of the sensor device. According to the invention, the further detection opening has a sensitive surface located on a second side of the substrate facing away from the first side and is designed such that a change in at least one physical quantity at the sensitive surface causes a change in a second sensor signal output by or tapped from the sensing device. This orientation of the sensitive surface provides additional protection for the sensitive surface. According to the invention, the further sensing device is a pressure and / or sound detection device comprising a membrane component that covers a third cavity formed in the substrate such that the membrane component can be indented or outdented by means of a pressure change on its sensitive surface facing away from the third cavity, i.e., a change in at least one physical quantity. Due to the design of the mechanical decoupling structure adjacent to / near the pressure and / or sound detection device, its operation is reliably protected from stress. However, it should be noted that the design of the further sensing device is not limited to a pressure and / or sound detection device. The substrate can easily be attached to a printed circuit board and / or partially encased in packaging material. Even if the sensor device is equipped with the pressure and / or sound detection device described in the preceding paragraph, the additional design of the mechanical decoupling structure ensures that mechanical stress exerted on the substrate by the printed circuit board and / or packaging material does not affect the pressure and / or sound detection device. The advantages described above are also achieved when a corresponding manufacturing process is used for a sensor device with at least one chemical or electrochemical detection element. It should be noted that the manufacturing process can be further developed according to the embodiments of the sensor device described above. Preferably, the anisotropic first etching process is a reactive ionic deep etching with alternating etch and passivation layers. This anisotropic first etching process is thus relatively simple and cost-effective, allowing the access openings (and preferably also the connecting openings) to be etched almost perpendicular to the first side of the substrate. This enables the access openings (and preferably also the connecting openings) to be etched with a comparatively large depth (perpendicular to the first side of the substrate) compared to a relatively small width (parallel to the first side of the substrate). Preferably, the isotropic second etching process is a reactive ionic etching without passivation steps. When switching from the anisotropic first etching process to the isotropic second etching process, a passivation and sputtering component of the reactive ionic etching can be eliminated. This makes the isotropic second etching process comparatively simple and cost-effective. Using the isotropic second etching process, the ends of the access openings (and possibly also the connecting openings) facing away from the first side of the substrate can be enlarged to such an extent that the substrate areas between the ends are removed, forming the first cavity (and possibly also the second cavity). Brief description of the drawings Further features and advantages of the present invention are explained below with reference to the figures. They show: Fig. 1 a schematic representation of a first embodiment of the sensor device; Fig. 2 a schematic representation of a second embodiment of the sensor device; Fig. 3 a schematic representation of a third embodiment of the sensor device; Fig. 4 a schematic representation of a fourth embodiment of the sensor device; Fig. 5 a schematic representation of a fifth embodiment of the sensor device; Fig. 6 a schematic representation of a sixth embodiment of the sensor device; and Fig. 7 a flowchart to explain an embodiment of the manufacturing process for a sensor device with at least one chemical or electrochemical detection device. Embodiments of the invention Fig. 1 shows a schematic representation of a first embodiment of the sensor device. The sensor device shown schematically in Fig. 1 has a substrate 10 with a chemical or electrochemical detection device 12 formed on and / or in the substrate 10. The chemical or electrochemical detection device 12 has a detection opening 14 structured in the substrate 10, wherein the detection opening 14 comprises access openings 16 structured by a first side 10a of the substrate 10 and a first cavity 18 (structured in the first substrate 10) into which the access openings 16 open. (The detection opening 14 and the first cavity 18 are each to be understood as a contiguous space.) The chemical or electrochemical detection device 12 is designed such that the presence of at least one material / substance to be detected in the detection opening 14 causes a change in a first sensor signal output by or tapped from the chemical or electrochemical detection device 12. The chemical or electrochemical detection device 12 can therefore be used to detect the at least one material / substance to be detected and / or to measure the concentration of the at least one material / substance to be detected. Due to the design of the detection opening 14 with the first cavity 18 (designed as a continuous space) and the access openings 16, a capillary pressure prevails in the detection opening 14, which prevents the escape of at least one detection material 20 that can interact (specifically) with the at least one material / substance to be detected. In the embodiment of Fig. 1, an ionic liquid 20 is filled into the detection opening 14 as the at least one detection material 20, whereby the capillary pressure in the chemical or electrochemical detection device 14 prevents the ionic liquid 20 from flowing out of the detection opening 14 and even from evaporating at high temperatures (such as soldering temperatures). The access openings 16 can have round, oval, square, or polygonal cross-sections parallel to the first side 10a of the substrate 10. The access openings 16 can also be slit-shaped, meandering, or arranged in interdigital structures on the first side 10a of the substrate 10. This can be particularly advantageous for providing volumes into which the at least one detection material 20, such as the ionic liquid 20, can expand / flow during significant thermal expansion (greater than the thermal expansion of the substrate material 10) without being lost to the system. The edges of the access openings 16 located on the first side 10a of the substrate 10 can have the same first (maximum / average) width b in a first spatial direction parallel to the first side 10a of the substrate 10, and the same second (maximum / average) width (not shown) in a second spatial direction parallel to the first side 10a of the substrate 10 and perpendicular to the first spatial direction. As will be explained below, however, the edges of the access openings 16 can also have different first (maximum / average) widths in the first spatial direction and / or different second (maximum / average) widths in the second spatial direction.By means of the at least one first (maximum / mean) width b of the access openings 16 in the first spatial direction and the at least one second (maximum / mean) width b of the access openings 16 in the second spatial direction, in particular a local distance of a floor area of ​​the first cavity 18 directed away from the first side 10a of the substrate 10 can be varied. In the embodiment shown in Fig. 1, a first electrode 22 and a second electrode 24 are also provided by way of example for tapping the first sensor signal at the chemical or electrochemical detection device 12. By way of example, the first electrode 22 and the second electrode 24 are arranged on the first side 10a of the substrate 10. When at least one of the electrodes 22 and 24 is arranged on the first side 10a of the substrate 10, it is advantageous if the respective electrode 22 or 24 covers not only a partial surface of the first side 10a of the substrate 10, but also at least a partial surface of the side walls of the access openings 16. The side walls of the access openings 16 can thus be used to increase the surface area of ​​at least one of the electrodes 22 and 24.Optionally, the partial surface of the first side 10a of the substrate 10 and at least one partial surface of the side walls of the access openings 16 can be coated with an insulating layer / electrical passivation on which at least one of the electrodes 22 and 24 is formed. The sensor device of Fig. 1 further comprises a sensing device 26 formed on and / or in the substrate 10, wherein a second cavity 28 is formed in the substrate 10 adjacent to the sensing device 26, into which structured connecting openings 30 open through the first side 10a of the substrate 10. (The second cavity 28 is to be understood as a continuous space.) The second cavity 28 and the connecting openings 30 form a stress decoupling opening 32 (or a mechanical decoupling structure), which protects the sensing device 26 from externally acting mechanical stress. This can also be described as follows: the stress decoupling opening 32 (consisting of the second cavity 28 and the connecting openings 30) provides stress decoupling of the sensing device 26 such that no / virtually no mechanical stress can act upon the sensing device 26.(The stress decoupling opening 32 also refers to a continuous space.) As explained in more detail below, the same process steps can be used to form the detection aperture 14 (comprising the first cavern 18 and the access openings 16) and the stress decoupling aperture 32 (comprising the second cavern 28 and the connecting openings 30). Therefore, the additional formation of the stress decoupling aperture 32 on the substrate 10 is possible (almost) without any additional effort. Thus, to reduce the cost and space requirements of the sensor device, at least the components 12 and 26 can be formed on and / or in the same substrate 10. Despite its versatility, the sensor device can therefore be easily miniaturized. This ease of miniaturization further enhances its usability. Preferably, the sensing device 26 has a sensitive surface 34 located on a second side 10b of the substrate 10, facing away from the first side 10a, and is configured such that a change in at least one physical quantity at the sensitive surface 34 causes a change in a second sensor signal output by or received from the sensing device 26. The sensitive surface 34 is preferably located on a side of the second cavity 28 facing away from the connecting openings 30. This not only improves stress decoupling of the sensing device 26, but can also facilitate its manufacture, as will be explained below. In the embodiment of Fig. 1, the further sensing device 26 is a pressure and / or sound detection device 26. While conventional pressure or sound sensors are generally sensitive to mechanical stress, especially mechanical stress from packaging, this disadvantage is eliminated in the sensor device of Fig. 1 by means of the stress decoupling opening 32. The stress decoupling opening 32 provides, in particular, mechanical decoupling of the pressure and / or sound detection device 26 without affecting or hindering its electrical connection.For example, the pressure and / or sound detection device 26 has a membrane component 36 which covers a third cavity 38 formed in the substrate 10 such that the membrane component 36 can be bulged inwards or outwards by means of a pressure change at its sensitive surface 34 facing away from the third cavity 38 (i.e., the change in at least one physical quantity). The third cavity 38 is preferably located between the membrane component 36 and the second cavity 28. A reference pressure (or a vacuum / near vacuum) can be set in the third cavity 38. A bulging or outward movement of the membrane structure 36 can be detected, for example, by means of piezoresistive resistors or by means of a capacitive readout method. In the example shown in Fig. 1, the substrate 10 is attached to a printed circuit board 40 (e.g., an ASIC / application-specific integrated circuit). For example, the substrate 10 can be bonded to the printed circuit board 40 via at least one (eutectic) bond connection 42. Furthermore, the substrate 10 is partially overmolded with a packaging material 44. At least one wire bond 46 attached to the substrate 10 and / or the printed circuit board 40 can also be overmolded with the packaging material 44. Mold anchor holes 48 can be formed on the substrate 10, for example, on its first side 10a, into which the packaging material 44 penetrates at least partially during the overmolding / molding of the substrate 10. When packaging the substrate 10 with the packaging material 44, the areas of the first side 10a of the substrate 10 around the openings 16 and 30 can be kept clear. Packaging the substrate 10 with the circuit board 40 and the packaging material 44 is relatively easy to carry out, since, due to the design of the stress decoupling opening 32, there is no risk of introducing stress from the packaging into the (conventionally stress-sensitive) sensing device 26. Furthermore, the sensor device has at least one connecting groove 49 extending from the second side 10b of the substrate 10 into the substrate 10, which opens into the second cavity 28. Preferably, the second side 10b of the substrate 10, which is attached to the printed circuit board 40, is oriented towards the printed circuit board 40, whereby a pressure access channel to the sensitive area 34 oriented towards the printed circuit board 40 is ensured via the connecting openings 30, the second cavity 28 and the at least one connecting groove 49. This provides additional protection for the sensitive area 34. Fig. 2 shows a schematic representation of a second embodiment of the sensor device. The sensor device of Fig. 2 differs from the previously described embodiment in that the first electrode 22 is formed on a bottom region of the first cavity 18 facing away from the first side 10a of the substrate 10. For example, a doped region can be introduced into the substrate 10 from the second side 10b of the substrate 10. Subsequently, the first cavity 18 can be etched to such a depth that the doped region used as the first electrode 22 is at least partially exposed. Regarding further features of the sensor device of Fig. 2, reference is made to the embodiment described above. Fig. 3 shows a schematic representation of a third embodiment of the sensor device. In the embodiment shown in Fig. 3, the edges of the access openings 16 on the first side 10a of the substrate 10 have different first widths b1 and b2 in the first spatial direction (parallel to the first side 10a of the substrate 10). Similarly, the edges of the access openings 16 can also have different second widths in the second spatial direction (parallel to the first side 10a of the substrate 10 and perpendicular to the first spatial direction). By increasing the first width b2, the local distance of the bottom area of ​​the first cavity 18, which faces away from the first side 10a of the substrate 10, can be selectively increased (in certain areas). This can be used, in particular, to expose the first electrode 22 located on the bottom surface of the first cavity 18 (facing away from the first side 10a of the substrate 10). Regarding further features of the sensor device of Fig. 3, reference is made to the embodiments described above. Fig. 4 shows a schematic representation of a fourth embodiment of the sensor device. In the sensor device of Fig. 4, the first electrode 22 and the second electrode 24 are formed on the circuit board 40. The first cavity 18 is etched through the second side 10b of the substrate 10 and through a bond connection 42 formed between the substrate 10 and the circuit board 40 to such a depth that the electrodes 22 and 24 are partially exposed. Regarding further features of the sensor device of Fig. 4, reference is made to the embodiments described above. Fig. 5 shows a schematic representation of a fifth embodiment of the sensor device. The sensor device of Fig. 5 has an additional volume 50 formed between the second side 10b of the substrate 10 and the circuit board 40, which is structured by the second side 10b of the substrate 10 and framed by a bonding connection 42, and which together with the first cavity 18 forms a continuous space. The electrodes 22 and 24 formed on the circuit board 40 can also be brought into contact with the at least one detection material 20, such as the ionic liquid 20, via such an additional volume 50. Regarding further features of the sensor device of Fig. 5, reference is made to the embodiments described above. Fig. 6 shows a schematic representation of a sixth embodiment of the sensor device. The sensor device of Fig. 6, as a further development of the embodiment described above, has a vent shaft 52 which is etched through the substrate 10 at a distance from the access openings 16 and opens into the additional volume 50 located between the second side 10b of the substrate 10 and the circuit board 40. Air can escape through the vent shaft 52 when the at least one detection material 20 / the ionic liquid 20 is poured in. Thus, there is no risk of air bubbles forming in the detection opening 14. The same etching steps used to form the detection aperture 14 (and possibly also the stress decoupling aperture 32) can be used to etch the vent 52. Therefore, forming the vent 52 does not involve any significant additional effort. The other sensor devices described above can also be formed with such a vent 52. Regarding further features of the sensor device of Fig. 6, reference is made to the embodiments described above. All sensor devices described above integrate the chemical or electrochemical detection device 12 together with the stress-decoupled pressure and / or sound detection device 26 into the same substrate 10. All sensor devices described above are each a MEMS (micro-electro-mechanical system) by means of which pressure measurement / atmospheric pressure measurement as well as chemical detection and / or chemical concentration measurement are possible. For the respective chemical or electrochemical detection device 12 of the sensor devices described above, a more specific sensitivity for detecting and / or quantifying a particular material / substance can also be achieved by selecting the at least one metal of the interacting electrodes 22 and 24 and / or by forming a gel layer selective with respect to the particular material / substance on at least one of the interacting electrodes 22 and 24. The respective chemical or electrochemical detection device 12 of the sensor devices described above can also be configured for detecting and / or quantifying multiple materials / substances by forming several pairs of interacting electrodes 22 and 24, wherein the different pairs of interacting electrodes 22 and 24 are specified differently by selecting their at least one metal and / or at least one selective gel layer.A third electrode can also serve as a reference electrode for at least one cooperating electrode pair. All sensor devices described above can also have several appropriately trained chemical or electrochemical detection devices 12 as a further development, which, due to their separately designed detection openings 14, can independently detect and / or quantitatively measure several materials / substances. Fig. 7 shows a flowchart to explain an embodiment of the manufacturing process for a sensor device with at least one chemical or electrochemical detection device. All the sensor devices described above can be manufactured using the manufacturing process described below. However, it should be noted that the feasibility of the manufacturing process is not limited to producing only one of the sensor devices described above. As process step S1, an anisotropic first etching process is carried out, by means of which at least access openings (for a subsequent detection opening of the chemical or electrochemical detection device) are etched through a first side of a substrate. In particular, the anisotropic first etching process / process step S1 can be a reactive ionic deep etching with alternating etching steps S1a and passivation steps S1b. Preferably, when carrying out the manufacturing process described here, at least one further sensing device is also formed on and / or in the substrate, wherein additional connecting openings (for a subsequent stress decoupling opening 32 of the further sensing device) are structured through the first side of the substrate by means of the anisotropic first etching process / process step S1. The benefit of the anisotropic first etching process / process step S1 is thus increased. In process step S2, an isotropic second etching process is subsequently carried out, by means of which the substrate is etched at the ends of the access openings (through the previously formed access openings) facing away from the first side of the substrate, such that a first cavity is formed into which the access openings open. Preferably, the isotropic second etching process / process step S2 is a reactive ionic deep etching without passivation steps. Preferably, the isotropic second etching process / process step S2 also etches the substrate at the ends of the connecting openings (through the previously formed connecting openings) facing away from the first side of the substrate, such that a second cavity adjacent to the sensing device into which the connecting openings open is formed in the substrate. The formation of the second cavity is thus possible without a (significant) additional work expenditure. In a further process step S3, which can also be partially carried out before process steps S1 and S2, the chemical or electrochemical detection device is designed on and / or in the substrate in such a way that the presence of at least one material to be detected in the detection opening comprising the access openings and the first cavity causes a change in a first sensor signal output by or tapped from the detection device. As an optional process step S0, the additional sensing device can be configured with a sensitive surface located on a second side of the substrate facing away from the first side, such that a change in at least one physical quantity on the sensitive surface causes a change in a second sensor signal output by or received from the sensing device. Despite the proximity between the stress decoupling opening 32 (comprising the connecting openings and the second cavity) and the sensing device, no damage to the sensing device, in particular no damage to its sensitive surface, is to be expected during process steps S1 and S2, even if process steps S1 and S2 are executed from the first side of the substrate. Process step S0 can therefore be performed without problems before and / or after process steps S1 and S2. The additional sensing device is, for example,Designed as a pressure and / or sound detection device with a third cavity formed in the substrate and a membrane component covering the third cavity, which is designed such that the membrane component bulges inwards or outwards at its sensitive surface facing away from the third cavity (i.e., the change in at least one physical quantity) when pressure changes. A connecting trench can also be structured into the substrate from the second side, which (later) opens into the second cavity. As a further optional process step S4, the substrate can be attached to a printed circuit board. In particular, the second side of the substrate can be aligned with the printed circuit board, whereby a pressure access channel to the sensitive area oriented towards the printed circuit board is ensured via the connection openings, the second cavity, and the connection groove. Process step S4 can be carried out before and / or after process steps S1 and S2. Optionally, the substrate can be partially overmolded / overmolded with a packaging material as process step S5.

Claims

Sensor device with: a substrate (10); and at least one chemical or electrochemical detection device (12) formed on and / or in the substrate (10), which has a detection opening (14) structured in the substrate (10) and is configured such that the presence of at least one material to be detected in the detection opening (14) causes a change in a first sensor signal output by or tapped from the detection device (12); characterized in that the detection opening (14) comprises access openings (16) structured by a first side (10a) of the substrate (10) and a first cavity (18) into which the access openings (16) open, wherein the sensor device further comprises at least one additional sensing device (26) formed on and / or in the substrate (10), and wherein a second cavity (28) is formed in the substrate (10) adjacent to the sensing device (26),in which structured connecting openings (30) open through the first side (10a) of the substrate (10), and wherein the further sensing device (26) has a sensitive surface (34) located on a second side (10b) of the substrate (10) facing away from the first side (10a) and is configured such that a change in at least one physical quantity at the sensitive surface (34) causes a change in a second sensor signal output by or tapped from the sensing device (26), and wherein the further sensing device (26) is a pressure and / or sound detection device (26) which has a membrane component (36) that covers a third cavity (38) formed in the substrate (10) such that the membrane component (36) is activated by means of a pressure change at its sensitive surface (34) facing away from the third cavity (38) as the change in at least one physical quantity. or is bulgeable. Sensor device according to claim 1, wherein the substrate (10) is attached to a printed circuit board (40) and / or partially encased with a packaging material (44). Manufacturing method for a sensor device with at least one chemical or electrochemical detection device (12) comprising the steps: etching access openings (16) through a first side (10a) of a substrate (10) by means of an anisotropic first etching process (S1); forming a first cavity (18) into which the access openings (16) open by etching the substrate (10) at the ends of the access openings (16) facing away from the first side (10a) of the substrate (10) by means of an isotropic second etching process (S2); and forming the chemical or electrochemical detection device (12) on and / or in the substrate (10) such that the presence of at least one material to be detected in a detection opening (14) encompassing the access openings (16) and the first cavity (18) causes a change in a first sensor signal output by or tapped from the detection device (12) (S3),wherein at least one further sensing device (26) is formed on and / or in the substrate (10), and wherein by means of the anisotropic first etching process (S1) additional connecting openings (30) are structured through the first side (10a) of the substrate (10) such that by means of the isotropic second etching process (S2) by etching the substrate (10) at the ends of the connecting openings (30) facing away from the first side (10a) of the substrate (10) a second cavity (28) adjacent to the sensing device (28) into which the connecting openings (30) open is formed in the substrate (10), and wherein the further sensing device (26) is formed with a sensitive surface (34) located on a second side (10b) of the substrate (10) facing away from the first side (10a) such thatthat a change in at least one physical quantity at the sensitive surface (34) causes a change in a second sensor signal (S0) output by or tapped from the sensing device (26), and wherein the further sensing device (16) is configured as a pressure and / or sound detection device (26) with a third cavity (38) formed in the substrate (10) and a membrane component (36) covering the third cavity (38), which is configured such that the membrane component (36) is bulged inwards or outwards when there is a pressure change at its sensitive surface (34) facing away from the third cavity (38) corresponding to the change in at least one physical quantity. Manufacturing process according to claim 3, wherein the anisotropic first etching process (S1) is a reactive ionic deep etching with alternating etching and passivation steps (S1a, S1b). Manufacturing process according to one of claims 3 or 4, wherein the isotropic second etching process (S2) is a reactive ionic deep etching without passivation steps. Manufacturing method according to one of claims 3 to 5, wherein the substrate (10) is attached to a printed circuit board (40) (S4) and / or partially encased with a packaging material (44) (S5).

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