DISPLAY DEVICE

Abstract

A display device (100) comprising: a substrate (110) having an emission region (EA) and a non-emission region (NEA) and in which a plurality of subpixels (SP) are defined; a plurality of first electrodes (131, 231) arranged in an associated manner in the plurality of subpixels (SP); a dam (114, 714, 914, 1014, 1114, 1214, 1314) disposed in the non-emission area (NEA) between the plurality of subpixels (SP) and exposing the first electrode (131, 231) of each subpixel (SP) through an opening (OP) of the subpixel (SP); a projection (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) at least partially formed in a second non-emission region (NEA2) of the non-emission region (NEA) formed in a first non-emission region (NEA1) on a flat upper surface of the dam (114, 714, 914, 1014, 1114, 1214, 1314) and the second non-emission region (NEA2) on an inclined upper surface of the dam (114, 714, 914, 1014, 1114, 1214, 1314) is divided into sections; an organic layer (132, 232) disposed on the plurality of first electrodes (131, 231); and a second electrode (133, 233) arranged on the organic layer (132, 232), wherein the organic layer (132, 232) comprises: a first organic layer disposed at the opening (OP); and a second organic layer arranged from the first non-emission region (NEA1) of the dam (114, 714, 914, 1014, 1114, 1214, 1314) to an upper portion of the projection (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740), and one end of the second organic layer is arranged on a side surface of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) at a distance from the first organic layer.

Description

BACKGROUNDField of InterestThe present disclosure relates to a display device, and more particularly relates to a display device in which light emission from a light emitting element caused by leakage current can be minimized.Description of the Related ArtSince the world has reached a full information age, the field of display devices for visually displaying electrical information signals has grown rapidly. Consequently, much research is being continued for enhancing performance such as thinning, weight reduction, and reduced power consumption of various display devices.Among these display devices, an organic light emitting diode display device is a self light emitting display device that does not require a separate light source, unlike a liquid crystal display device. Consequently, the organic light emitting diode display device can be manufactured in a lightweight and thin shape. Furthermore, the organic light emitting diode display device is advantageous in terms of power consumption because it is driven with a low voltage. Also, the organic light emitting diode display device has excellent color reproducibility, high response speed, wide viewing angle, and high contrast ratio CR. Therefore, the organic light emitting diode display device has been studied as a next generation display device.US 2014 / 0 103 368 A1 describes a light emitting device including a first lower electrode and a second lower electrode over an insulating layer; a partition wall formed over the insulating layer and positioned between the first lower electrode and the second lower electrode; a protruding object formed over the partition wall; a first light emitting unit over each of the first lower electrode, the partition wall, the protruding object, and the second lower electrode; an intermediate layer over the first light emitting unit; a second light emitting unit over the intermediate layer; and an upper electrode over the second light emitting unit, wherein a recess is formed by a side surface of the protruding object and a side surface of the partition wall.US 2014 / 0 252 321 A1 describes an organic light emitting display device including a display substrate having a plurality of pixel regions at least partially defined by a plurality of non-pixel regions; a sealing substrate facing the display substrate; and a spacer on one of the non-pixel regions of the display substrate between the display substrate and the sealing substrate to maintain a space between the display substrate and the sealing substrate, wherein the plurality of pixel regions includes a first pixel, a second pixel spaced apart from the first pixel and having a center corresponding to a first corner of a virtual rectangle having a center corresponding to a center of the first pixel, and a third pixel spaced apart from the second pixel and having a center corresponding to a second corner adjacent to the first corner of the virtual rectangle, and wherein the spacer is disposed adjacent to the second pixel.OVERVIEWAn object to be achieved with the present disclosure is to provide a display device having a multi-stack structure in which a plurality of light emitting units are laminated to achieve improved yield and durability.Another object to be achieved with the present disclosure is to provide a display device in which light emission caused by leakage current can be minimized from some of a plurality of light emitting elements having a common layer.Still another object to be achieved with the present disclosure is to provide a display device in which an organic layer disconnection structure can be stably ensured.Objects of the present disclosure are not limited to the above-mentioned objects, and other objects not mentioned above will be clearly understood by those skilled in the art from the following descriptions. According to an aspect of the present disclosure, there is provided a display device according to claim 1. Further embodiments are described in the dependent claims.According to an aspect of the present disclosure, a display device includes: a substrate having an emission region and a non-emission region, and in which a plurality of subpixels are defined. Furthermore, the display device includes first electrodes arranged in the plurality of subpixels in an associated manner. Further, the display device includes a bank disposed in the non-emission region between the plurality of sub-pixels and exposing the first electrode through an opening. Also, the display device includes a protrusion disposed in a second non-emission region of the non-emission region divided into a first non-emission region on a flat upper surface of the bank and the second non-emission region on an inclined upper surface of the bank. Further, the display device includes an organic layer disposed on the plurality of first electrodes and a second electrode disposed on the organic layer. The organic layer includes a first organic layer disposed at the opening; and a second organic layer disposed from the first non-emission region of the bank to an upper portion of the protrusion, and an end of the second organic layer is disposed at a side surface of the protrusion at a distance from the first organic layer.Other detailed matters of the exemplary embodiments are included in the detailed description and the drawings.According to the present disclosure, an organic light emitting element has a multi-stack structure and thus can achieve a high yield and can be driven at a low current. Therefore, the durability of the organic light emitting element can be improved.According to the present disclosure, it is possible to suppress leakage current caused by a common layer of a plurality of light emitting elements.According to the present disclosure, when a display device having a multi-stack structure is driven, light emission from an unintentional light emitting element can be minimized. Thus, it is possible to improve color reproduction characteristics.According to the present disclosure, an interruption structure of an organic layer can be stably secured. Thus, it is possible to improve a production yield and a processability.The effects according to the present disclosure are not limited to the contents described above by way of example, and more various effects are included in the present application.BRIEF DESCRIPTION OF THE DRAWINGSThe above and other aspects, features and other advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a schematic system configuration view of a display device according to a first exemplary embodiment of the present disclosure; FIG. 2 is a circuit diagram of a subpixel of the display device according to the first exemplary embodiment of the present disclosure; FIG. 3A is an enlarged plan view of a subpixel according to the first exemplary embodiment of the present disclosure; FIG. 3B is a cross-sectional view taken along a line III-III' of FIG. 3A ; FIG. 4 is a cross-sectional view of the subpixel according to the first exemplary embodiment of the present disclosure; FIG. 5 is a diagram for explaining an angle range of a protrusion according to the present disclosure; FIG. 6A is an enlarged plan view of a subpixel according to a second exemplary embodiment of the present disclosure; FIG. 6B is a cross-sectional view taken along a line VI-VI' of FIG. 6A ; FIG. 7A is an enlarged plan view of a subpixel according to a third exemplary embodiment of the present disclosure; FIG. 7B is a cross-sectional view taken along a line VIIa-VIIa' of FIG. 7A ; FIG. 7C is a cross-sectional view taken along a line VIIb-VIIb' of FIG. 7A ; FIG. 8 is a cross-sectional view of a subpixel according to a fourth exemplary embodiment of the present disclosure; FIG. 9 is a cross-sectional view of a subpixel according to a fifth exemplary embodiment of the present disclosure; FIGS. 10A and 10B are cross-sectional views of a subpixel according to a sixth exemplary embodiment of the present disclosure; FIGS. 11A and 11B are cross-sectional views of a subpixel according to a seventh exemplary embodiment of the present disclosure; FIG. 12A is an enlarged plan view of a subpixel according to an eighth exemplary embodiment of the present disclosure; FIG. 12B is a cross-sectional view taken along a line XII-XII' of FIG. 12A ; FIGS. 13A to 13D are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to the third exemplary embodiment of the present disclosure; FIGS. 14A to 14D are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to the sixth exemplary embodiment of the present disclosure; FIGS. 15A to 15D are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the third exemplary embodiment of the present disclosure; FIGS. 16A to 16F are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the third exemplary embodiment of the present disclosure; FIGS. 17A to 17F are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the sixth exemplary embodiment of the present disclosure; FIGS. 18A to 18C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a ninth exemplary embodiment of the present disclosure; FIGS. 19A to 19C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a tenth exemplary embodiment of the present disclosure; FIGS. 20A to 20C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to an eleventh exemplary embodiment of the present disclosure; FIGS. 21A to 21C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a twelfth exemplary embodiment of the present disclosure; FIG. 22 is a cross-sectional view illustrating a part of a subpixel according to the ninth exemplary embodiment of the present disclosure; FIG. 23 is a cross-sectional view illustrating a part of a subpixel according to a thirteenth exemplary embodiment of the present disclosure; FIG. 24 is a plan view of a display device according to an exemplary embodiment of the present disclosure; FIG. 25 is a plan view of a display device according to another exemplary embodiment of the present disclosure; FIG. 26 is a plan view of a display device according to another exemplary embodiment of the present disclosure; FIG. 27 is a plan view of a display device according to still another exemplary embodiment of the present disclosure; FIG. 28 is a plan view of a display device according to still another exemplary embodiment of the present disclosure; FIG. 29 is a plan view of a display device according to still another exemplary embodiment of the present disclosure; FIG. 30 is a plan view of a display device according to still another exemplary embodiment of the present disclosure; FIG. 31 is a plan view of a display device according to still another exemplary embodiment of the present disclosure; and FIG. 32 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.DETAILED DESCRIPTIONAdvantages and characteristics of the present disclosure and a method for achieving the advantages and characteristics are made known by referring to exemplary embodiments described below together with the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but may be implemented in various forms. The exemplary embodiments are provided by way of example only, so that those skilled in the art can fully understand the disclosures of the present disclosure and the scope of application of the present disclosure. Therefore, the present disclosure will be defined only by the scope of the appended claims.The shapes, sizes, ratios, angles, numbers, and the like illustrated in the accompanying drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Like reference numerals refer to like parts throughout the application. Further, in the following description of the present disclosure, detailed explanation of known related technologies may be omitted to prevent the subject matter of the present disclosure from being unnecessarily obscure. The terms used herein, such as "comprising", "nhabend", and "consisting of", are intended to allow other elements to be added, except when the terms are used with the term "only". All references to the singular may include the plural, unless expressly stated otherwise.Components are designed to have a common range of errors, although not expressly mentioned.When the spatial relationship between two parts is described using the terms such as "on", "over", "under", and "next", one or more parts may be arranged between the two parts except when the terms are used with the term "immediately" or "directly".When an element or layer is disposed "on" another element or layer, another layer or element may be directly on or interposed between the other element.Although the terms "first", "second" and the like are used to describe various components, these components are not limited by these terms. These terms are used only to distinguish one component from the other component. Therefore, a first component mentioned below may be a second component in a technical context of the present disclosure.Like reference numerals generally refer to like elements throughout the application.A size and a thickness of each component illustrated in the drawing are illustrated for convenience of description, and the present disclosure is not limited to the size and the thickness of the illustrated component.The features of various embodiments of the present disclosure may be partially or fully attached to or combined with each other and may technically interlock and operate with each other in various ways, and the embodiments may be carried out independently of or in conjunction with each other.Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.FIG. 1 is a schematic system configuration view of a display device according to a first exemplary embodiment of the present disclosure.For convenience of explanation, FIG. 1 illustrates only a display panel PN, a gate driver GD, a data driver DD, and a timing controller TC of a display device 100 among various components. However, the present disclosure is not limited thereto.Referring to FIG. 1, the display device 100 may include a display panel PN including a plurality of subpixels SP. The display device 100 may also include a gate driver GD and a data driver DD configured to supply various signals to the display panel PN, and a timing controller TC configured to control the gate driver GD and the data driver DD.The gate driver GD may supply a plurality of scan signals to a plurality of scan lines SL in response to a plurality of gate control signals GCS supplied from the timing controller TC. The plurality of scan signals may include a first scan signal SCAN 1 and a second scan signal SCAN 2. Although FIG. 1 illustrates that a gate driver GD is disposed on a side of the display panel PN so as to be spaced apart from the display panel PN, the present disclosure is not limited thereto.The gate driver GD may also be arranged in a GIP (gate-in-panel) manner, and the present disclosure is not limited to the number and position of the gate drivers GD.The data driver DD may convert image data RGB supplied from the timing controller TC into a data signal using a reference gamma voltage in response to a plurality of data control signals DCS supplied from the timing controller TC. Further, the data driver DD may supply the converted data signal to a plurality of data lines DL.The timing controller TC may control the image data RGB input from the outside and supply the image data RGB to the data driver DD.The timing controller TC may generate a gate control signal GCS and a data control signal DCS using synchronization signals SYNC such as a pixel clock signal, a data enable signal, and horizontal / vertical synchronization signals input from the outside. The timing controller TC may supply the generated gate control signal GCS and data control signal DCS to the gate driver GD and the data driver DD, respectively.The display panel PN is configured to display images to a user, and may include the plurality of subpixels SP. The display panel PN may include a plurality of scan lines SL and a plurality of data lines DL that overlap each other, and each of the plurality of sub-pixels SP may be connected to a scan line SL and a data line DL. Further, although not illustrated in the drawing, each of the plurality of subpixels SP may be connected to a high voltage power line, a low voltage power line, an initialization signal line, a light emission control signal line, and the like.Each of the plurality of subpixels SP is a minimum unit for displaying an image, and may include a light emitting element and a pixel circuit for driving the light emitting element. A plurality of light emitting elements may be defined differently depending on the type of the display panel PN. For example, when the display panel PN is an organic light emitting display panel, the light emitting element may be an organic light emitting element including an anode, a light emitting unit, and a cathode. Hereinafter, descriptions will be made on the assumption that the light emitting element is an organic light emitting element, but the light emitting element is not limited thereto.The pixel circuit is configured to control driving of the light emitting element. The pixel circuit may be composed of a plurality of transistors and a capacitor, but is not limited thereto.Hereinafter, the pixel circuit of the subpixel SP will be described in more detail with reference to FIG. 2.FIG. 2 is a circuit diagram of a subpixel of the display device according to the first exemplary embodiment of the present disclosure.Referring to FIG. 2, a pixel circuit of each of the plurality of subpixels SP may include a first transistor to sixth transistors T 1, T 2, T 3, T 4, T 5, and T 6, and a capacitor Cst.The first transistor T 1 may be connected to a second scan line and may be controlled by a second scan signal SCAN 2 supplied through the second scan line. The first transistor T 1 may be electrically connected between a data line supplying a data signal Vdata and the capacitor Cst. When the second scan signal SCAN 2 of an on-level voltage is applied through the second scan line, the first transistor T 1 may transmit the data signal Vdata supplied from the data line to the capacitor Cst. The first transistor T 1 may be referred to as a switching transistor that controls a timing of applying the data signal Vdata to the capacitor Cst.The second transistor T 2 may be electrically connected between a high voltage power line supplying a high voltage current signal EVDD and the fifth transistor T 5. Further, a gate electrode of the second transistor T 2 may be electrically connected to the capacitor Cst. The second transistor T 2 may be referred to as a driving transistor that controls brightness of a light emitting element 130 by controlling a current flowing to the light emitting element 130 depending on a voltage applied to the gate electrode.Likewise, the third transistor T 3 may be controlled by a first scan signal SCAN 1 supplied through a first scan line. The third transistor T 3 may be electrically connected between the gate electrode and a drain electrode or between the gate electrode and a source electrode of the second transistor T 2, depending on the type of the third transistor T 3.The second transistor T 2 as the driving transistor is configured to control a current flowing to the light emitting element 130 depending on the data signal Vdata applied to the subpixel SP. However, due to a threshold voltage difference between the second transistors T 2 arranged in the respective subpixels SP, a difference in brightness may occur between the light emitting elements 130 arranged in the respective subpixels SP.In this case, the third transistor T 3 may be arranged to compensate a threshold voltage of the second transistor T 2, and the third transistor T 3 may be referred to as a compensation transistor. For example, when the first scan signal SCAN 1 that turns on the third transistor T 3 is applied, a voltage obtained by subtracting the threshold voltage of the second transistor T 2 from the high voltage current signal EVDD may be applied to the gate electrode of the second transistor T 2. In a state where the high voltage current signal EVDD from which the threshold voltage is subtracted is applied to the gate electrode of the second transistor T 2, the data signal Vdata may be applied to the capacitor Cst. In this way, the threshold voltage of the second transistor T 2 may be compensated.The third transistor T 3 and the first transistor T 1 are illustrated as receiving different scan signals SCAN 1 and SCAN 2 through different scan lines, respectively. However, the third transistor T 3 and the first transistor T 1 may be connected to the same scan line and may receive the same scan signal SCAN 1 or SCAN 2, but the present disclosure is not limited thereto.The fourth transistor T 4 may be electrically connected to the capacitor Cst and an initialization signal line supplying an initialization signal Vini. Further, the fourth transistor T 4 may be controlled by a light emission control signal EM supplied through a light emission control signal line. When the light emission control signal EM of an on-voltage level is applied through the light emission control signal line, the fourth transistor T 4 may initialize a voltage of the capacitor Cst. Alternatively, the fourth transistor T 4 may allow a current to flow into the light emitting element 130 in response to the data signal Vdata while slowly discharging the data signal Vdata applied to the capacitor Cst.The fifth transistor T 5 may be electrically connected between the second transistor T 2 and the light emitting element 130. Further, the fifth transistor T 5 may be controlled by the light emission control signal EM supplied through the light emission control signal line. When the data signal Vdata is applied to the capacitor Cst and the high voltage current signal EVDD having the compensated threshold voltage is applied to the gate electrode of the second transistor T 2, the light emission control signal EM of an on-level voltage may be applied. In this case, the fifth transistor T 5 may be turned on such that a current may flow into the light emitting element 130 connected to the low voltage power line EVSS.The sixth transistor T 6 may be electrically connected between the initialization signal line supplying the initialization signal Vini and an anode of the light emitting element 130. Further, the sixth transistor T 6 may be controlled by the first scan signal SCAN 1 supplied through the first scan line. When the first scan signal SCAN 1 of an on-level voltage is applied through the first scan line, the sixth transistor T 6 may use the initialization signal Vini to initialize the anode of the light emitting element 130. Alternatively, the sixth transistor T 6 may use the initialization signal Vini to initialize a node between the second transistor T 2 and the fifth transistor T 5.The capacitor Cst may be a storage capacitor Cst that is to apply a voltage to the gate electrode of the second transistor T 2 which is a driving transistor. Here, the capacitor Cst may be electrically connected between the gate electrode of the second transistor T 2 and the anode of the light emitting element 130. Therefore, the capacitor Cst can store a difference between a voltage of the gate electrode of the second transistor T 2 and a voltage applied to the anode of the light emitting element 130.In the above description, the pixel circuit of each of the plurality of subpixels SP is illustrated as including, for example, the first transistor to the sixth transistor T 1, T 2, T 3, T 4, T 5, and T 6 and the capacitor Cst. However, as described above, the present disclosure is not limited thereto.Hereinafter, the subpixel SP of the display device 100 according to the first exemplary embodiment of the present disclosure will be described in more detail with reference to FIGS. 3A, 3B, and 4.FIG. 3A is an enlarged plan view of a subpixel according to the first exemplary embodiment of the present disclosure.FIG. 3B is a cross-sectional view taken along a line III-III' of FIG. 3A.FIG. 4 is a cross-sectional view of the subpixel according to the first exemplary embodiment of the present disclosure.FIG. 3A illustrates an example in which the subpixel has a hexagonal shape, but the present disclosure is not limited to the shape of the subpixel. FIG. 3B does not illustrate a lower structure below a cladding layer 113, and FIG. 4 illustrates a lower structure including a transistor 120 shown in the cross-sectional view of FIG. 3B. However, the present disclosure is not limited to the lower structure illustrated in FIG. 4.For convenience of description, FIG. 3A illustrates only a first electrode 131 and a bank 114 among the components of the light emitting element 130. The bank 114 may be disposed on the first electrode 131 except for a region exposed by an opening OP. For convenience of explanation, FIG. 4 illustrates only one transistor 120 of the plurality of transistors T 1, T 2, T 3, T 4, T 5, and T 6 and the capacitor Cst of the pixel circuit of the subpixel.Referring to FIGS. 3A, 3B, and 4, the display device according to the first exemplary embodiment of the present disclosure may include a substrate 110, the transistor 120, the light emitting element 130, the overcoat layer 113, the bank 114, and a sealing member 150. The display device may be a top emission type display device, but is not limited thereto.Each of a plurality of subpixels is a unit that emits light, and the light emitting element 130 may be disposed in each of the plurality of subpixels. The plurality of subpixels may include first subpixels, second subpixels, and third subpixels that emit light of different colors. For example, the first sub-pixels may be blue sub-pixels, the second sub-pixels may be green sub-pixels, and the third sub-pixels may be red sub-pixels. However, the present disclosure is not limited thereto.A plurality of subpixels may be defined by the dam 114. That is, the bank 114 may be disposed so as to overlap the overcoat layer 113 and a part of the first electrode 131 of the light emitting element 130 in the plurality of sub-pixels. The substrate 110 is divided into an emission region EA and a non-emission region NEA. For example, in the non-emission region NEA, the bank 114 may be disposed on the first electrode 131 so as to block generation of light in the non-emission region NEA. Since the bank 114 is not disposed in the emission region EA, an organic layer 132 is directly disposed on the first electrode 131. Thus, light can be generated from the organic layer 132.The non-emission region NEA may be divided into a first non-emission region NEA 1 and a second non-emission region NEA 2.The first non-emission region NEA 1 refers to a region on a flat upper surface of the bank 114, and the second non-emission region NEA 2 refers to a region on an inclined upper surface of the bank 114. The second non-emission region NEA 2 may be positioned between the first non-emission region NEA 1 and the emission region EA.According to the present disclosure, at least one protrusion 140 is disposed in the second non-emission region NEA 2. FIGS. 3A, 3B, and 4 illustrate an example in which a protrusion 140 is disposed on a side surface of the bank 114 (that is, in the second non-emission region NEA 2), but the present disclosure is not limited thereto. The protrusion 140 of the present disclosure may be disposed on both side surfaces of the bank 114 (that is, in the second non-emission region NEA 2), or two or more protrusions 140 may be disposed on at least one side surface of the bank 114.As illustrated in FIG. 3A, the protrusion 140 may be disposed to surround a part of the first electrode 131 of the subpixel. Alternatively, the protrusion 140 may be disposed at the edges of the first electrode 131 along the shape of the opening OP of the subpixel, but is not limited thereto. FIG. 3A illustrates an example in which the protrusion 140 is disposed only on a part of the edges of the first electrode 131 of the subpixel, but is not limited thereto. The protrusion 140 of the present disclosure may not be disposed on a part of the edges of the first electrode 131 of the subpixel for connection of a second electrode 133 between the adjacent subpixels. Hereinafter, the second electrode 133 is sometimes referred to as the cathode 133. Alternatively, at least a part of the protrusion 140 of the present disclosure may be disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2. Alternatively, the protrusion 140 of the present disclosure may be disposed along edges of the opening OP, and at least one part is disposed in the first non-emission region NEA 1, and the other part is disposed in the second non-emission region NEA 2, and the other part disposed in the second non-emission region NEA 2 is longer than the at least one part of the protrusion disposed in the first non-emission region NEA 1.The protrusion 140 may be divided into a plurality of parts. That is, the protrusion 140 may be interrupted at a part of the edges of the first electrode 131 and may be divided into a plurality of parts. However, the present disclosure is not limited thereto.Further, the protrusion 140 may be disposed to partially overlap the first electrode 131 under the protrusion 140, but is not limited thereto.The protrusion 140 of the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. In this case, two angles θ 1 and θ 2 at the ends of the lower edge, that is, the lower base, may be acute or obtuse in a predetermined range. The protrusion 140 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 140 of the present disclosure may act to suppress lateral leakage current occurring in, for example, a multi-stack structure. That is, the protrusion 140 of the present disclosure separates the organic layer 132 and the cathode 133 from each other between adjacent subpixels. However, the present disclosure is not limited to the multi-stack structure, and can be effectively applied to a case where a lateral leakage current occurs in a conventional organic light emitting diode display device.In order to suppress the influence of current leakage that occurs by using a common layer in an organic light emitting diode display device and occurs substantially due to a strong current path in a low gray area, a path of the current path may be increased or interrupted. The present disclosure is more effective in interrupting the current path.Specifically, according to the present disclosure, the protrusion 140 is disposed on an inclined side surface of the bank 114, that is, in the second non-emission region NEA 2. Therefore, it is possible to interrupt the organic layer 132 not only at an obtuse angle but also at an acute angle of 90° or less than a cone angle. Here, the taper angle (or tangential angle) refers to an angle between the substrate 110 and a tangent of the upper surface of the bank 114 on which the protrusion 140 is disposed in the second non-emission region NEA 2.The protrusion 140 of the present disclosure may be formed of a material different from the dam 114, but is not limited thereto. The protrusion 140 of the present disclosure may be formed of the same material as the bank 114, and in this case, the protrusion 140 and the bank 114 may be formed in the same process.The protrusion 140 may be patterned together with the bank 114.The method for breaking the current path according to the present disclosure is performed under simple process conditions and has a high degree of freedom in selecting materials compared to a previous method using an etching rate difference.Referring to FIGS. 3B and 4, the substrate 110 is a support member for supporting the other components of the display device, and may be formed of an insulating material.For example, the substrate 110 may be formed of glass, resin, or the like. Also, the substrate 110 may be formed of a material including plastic such as a polymer or polyimide PI, or may be formed of a material including flexibility.A buffer layer 111 may be disposed on the substrate 110. The buffer layer 111 may suppress the penetration of moisture or contaminants through the substrate 110. The buffer layer 111 may be formed as a single layer of silicon oxide (SiOx) or silicon nitride (SiNx), or a multilayer layer of silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto. However, the buffer layer 111 may be omitted depending on the type of the substrate 110 or the type of the transistor, but is not limited thereto.The transistor 120 may be disposed on the buffer layer 111. The transistor 120 may include a gate electrode 121, an active layer 122, a source electrode 123, and a drain electrode 124.The transistor 120 illustrated in FIG. 4 has a structure in which the active layer 122 is disposed on the gate electrode 121, the source electrode 123 and the drain electrode 124 are disposed on the active layer 122. That is, the transistor has a bottom gate structure in which the gate electrode 121 is disposed as the lowermost layer, but the present disclosure is not limited thereto.The gate electrode 121 may be disposed on the buffer layer 111.The gate electrode 121 may be formed of a conductive material such as, but not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.A gate insulating layer 112 may be disposed on the gate electrode 121.The gate insulating layer 112 is configured to isolate the active layer 122 from the gate electrode 121. The gate insulating layer 112 may be formed as a single layer of silicon oxide (SiOx) or silicon nitride (SiNx), or a multilayer of silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.The active layer 122 may be formed on the gate insulating layer 112.The active layer 122 may be formed of a semiconductor material such as, but not limited to, an oxide semiconductor, amorphous silicon, or polysilicon. For example, when the active layer 122 is formed of oxide semiconductor, the active layer 122 is composed of a channel region, a source region, and a drain region. The source region and the drain region may be made conductive, but the present disclosure is not limited thereto.An etching stopper 117 may be disposed on the active layer 122. When the source electrode 123 and the drain electrode 124 are formed by etching and patterning, the etching stopper 117 may serve to suppress plasma-caused damage to the surface of the active layer 122. One end of the etching stopper 117 may overlap the source electrode 123, and the other end of the etching stopper 117 may overlap the drain electrode 124. On the other hand, the etching stopper 117 may be omitted.The source electrode 123 and the drain electrode 124 may be disposed on the active layer 122 and the etching stopper 117. The source electrode 123 and the drain electrode 124 are spaced apart from each other and may be electrically connected to the active layer 122. The source electrode 123 and the drain electrode 124 may be formed of a conductive material such as, but not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.The overcoat layer 113 may be disposed on the transistor 120. The overcoat layer 113 is an insulating layer configured to flatten an upper portion of the substrate 110. The coating layer 113 may be formed of an organic material. The overcoat layer 113 may be formed as a single layer of, for example, polyimide or photoacryl, or a multilayer layer of polyimide and photoacryl, but is not limited thereto.A plurality of light emitting elements 130 may be arranged in a plurality of sub-pixels on the overcoat layer 113. Each light emitting element 130 may include the first electrode 131, the organic layer 132, and the second electrode 133. Although not illustrated in the drawings, the organic layer 132 may be composed of an emission layer disposed in the emission region EA and a common layer formed on the entire surface of the substrate 110 including the emission region EA and the non-emission region NEA.The first electrode 131 may be disposed on the coating layer 113.The first electrode 131 may be electrically connected to the transistor 120, and thus may be supplied with a driving current of the pixel circuit. The first electrode 131 may be formed of a conductive material having high leakage energy for supplying holes to the emission layer. The first electrode 131 may be formed of a light transmissive conductive material such as, but not limited to, indium tin oxide (ITO) or indium zinc oxide (IZO).The display device may be implemented as a top emission type or a bottom emission type. In the case of the top emission type display device, light emitted from the emission layer is reflected by the first electrode 131 in an upward direction, that is, toward the second electrode 133. For this purpose, a reflective layer made of a metal material having high reflection efficiency, such as aluminum Al or silver Ag, may be further disposed below the first electrode 131. In the case of the bottom emission type display device, the first electrode 131 may be formed of only a light transmissive conductive material. Hereinafter, descriptions will be made on the assumption that the display device of the present disclosure is a top emission display device.For example, the first electrode 131 may have a stack structure of two or more layers including a reflective layer.The organic layer 132 may be disposed between the first electrode 131 and the second electrode 133.Electrons and holes supplied from the first electrode 131 and the second electrode 133 are combined in the organic layer 132, thereby causing the organic layer 132 to emit light.Various organic light emitting element structures for improving the yield and lifetime and reducing the power consumption of an organic light emitting element have been proposed for improving the quality and productivity of an organic light emitting diode display device.Accordingly, an organic light emitting element adopting a single stack, that is, a single electroluminescence (EL) unit has been proposed. Also, a tandem organic light emitting element 130 adopting a plurality of stacks, that is, a stack of a plurality of EL units has been proposed for improving the yield and the lifetime. However, the present disclosure is not limited to the tandem structure. Hereinafter, for convenience of description, the tandem structure will be described as an example.In the tandem structure, that is, the organic light emitting element 130 adopting a stack of a first EL unit and a second EL unit, an emission region in which light is emitted by recombination between electrons and holes is positioned in each of the first EL unit and the second EL unit. Further, light emitted from a first emission layer of the first EL unit and light emitted from a second emission layer of the second EL unit cause constructive interference. Thus, the tandem organic light emitting element 130 may provide a higher brightness than the organic light emitting element 130 adopting a single stack structure.The stacked structure may include, for example, a charge generation layer disposed between the first electrode 131 and the second electrode 133. Further, the stack structure may include a first stack disposed between the charge generation layer and the first electrode 131, and a second stack structure disposed between the second electrode 133 and the charge generation layer. The charge generation layer may be disposed between the first stack and the second stack, and may generate charges. The charge generation layer may have a structure in which a p-type charge generation layer and an n-type charge generation layer are laminated. That is, the charge generation layer for generating positive charges and negative charges in both directions includes the p-type charge generation layer and the n-type charge generation layer. The charge generation layer may function substantially as an electrode.Each of the first stack and the second stack includes at least one emission layer and may include common layers on and below the emission layer.The distance between a plurality of subpixels consisting of a single pixel in the organic light emitting element 130 decreases as the resolution of the organic light emitting diode display device increases. Organic auxiliary layers such as a hole injection layer HIL, a hole transport layer HTL, a charge generating layer CGL, an electron injection layer EIL, and an electron transport layer ETL except an emission layer EML are disposed and formed using a common mask in a common layer corresponding to all of a plurality of subpixels. Emission layers within a plurality of subpixels generating light of different wavelengths may be individually arranged and formed using a fine metal mask corresponding to the respective subpixels.With respect to the organic light emitting element 130 as described above, when a voltage is applied between the first electrode 131 and the second electrode 133, a lateral leakage current occurs in a horizontal direction of the organic light emitting element 130 through a common layer formed inside the organic light emitting element 130. Thus, color mixing caused by unwanted emission of a subpixel adjacent to a subpixel required to emit light occurs.Such color mixing can more strongly occur in the organic light emitting element 130 having a 2-stack structure in which the first EL unit and the second EL unit are laminated using constructive interference of light than in the organic light emitting element having a single stack structure.Accordingly, in the present disclosure, as illustrated in FIGS. 3A, 3B, and 4, the protrusion 140 is formed in the inclined second emission region NEA 2 of the bank 114. Thus, the organic layer 132 and the second electrode 133 are partially interrupted between adjacent subpixels. Therefore, particularly when a display device that is driven by a multi-stack structure, leakage current can be minimized.Referring again to FIGS. 3B and 4, the bank 114 may be disposed on the first electrode 131 and the plating layer 113. The bank 114 is an insulating layer arranged to divide a plurality of subpixels between the plurality of subpixels.The bank 114 may include an opening OP through which a part of the first electrode 131 is exposed. The bank 114 may be an organic insulating material disposed so as to cover an edge or a peripheral portion of the first electrode 131. The dam 114 may be formed of polyimide or acrylic or benzocyclobutene (BCB)-based resin, but is not limited thereto.A plurality of spacers may be disposed on the bank 114 in the first non-emission region NEA 1. That is, the spacers may be disposed on the flat upper surface of the bank 114 in the first non-emission region NEA 1. The spacers may be disposed in the first non-emission region NEA 1 on the bank 114 so as to maintain a predetermined distance from a deposition mask when the light emitting element 130 is formed. A predetermined distance between the bank 114 and the first electrode 131 among the spacers and the deposition mask may be maintained by the spacers. Also, the spacers can suppress damage caused by contact. Here, each of the plurality of spacers may be formed, for example, in a taper shape having a width increasing toward an upper side thereof to minimize a contact area with the deposition mask.The organic layer 132 is disposed on the first electrode 131. The organic layer 132 may include an emission layer disposed in each of a plurality of subpixels and a common layer disposed in common in the plurality of subpixels. The emission layer is an organic layer configured to emit light of a specific color. Different emission layers may be arranged in a first sub-pixel, a second sub-pixel and a third sub-pixel, respectively. However, the present disclosure is not limited thereto. Each of the subpixels may include a plurality of emission layers for emitting white light.The common layer is an organic layer configured to improve the emission yield of the emission layer. The common layer may be formed as a single layer across the plurality of sub-pixels. That is, the common layer in each of the plurality of sub-pixels may be connected to each other and may be integrally formed as one body. The common layer may include, but is not limited to, an HIL, an HTL, an EIL, a CGL, and the like.The second electrode 133 is disposed on the organic layer 132.The second electrode 133 is an electrode configured to supply electrons to the organic light emitting element 130 according to the first exemplary embodiment of the present disclosure. The second electrode 133 may be formed of a material having a low output energy. The second electrode 133 may include a light transmissive conductive material. For example, the second electrode 133 may be formed of indium tin oxide (ITO), or indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), or the like. Alternatively, the second electrode 133 may include one selected from the group consisting of metal materials such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), palladium (Pd), and copper (Cu), or alloys thereof. For example, the second electrode 133 may be formed of an alloy (Mg:Ag) of magnesium (Mg) and silver (Ag). Alternatively, the second electrode 133 may include a stack of a layer formed of a light-transmissive conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and a layer formed of a metal material such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), magnesium (Mg), palladium (Pd), or copper (Cu), or an alloy thereof, but is not limited thereto.Although not illustrated in the drawings, the second electrode 133 may be electrically connected to a low voltage power line, and thus may be supplied with a low voltage power signal.The sealing member 150 may be disposed on the second electrode 133. The sealing member 150 may be disposed on the bank 114 and the light emitting element 130. The sealing member 150 can suppress the penetration of oxygen and moisture from the outside into the display device. For example, when the display device is exposed to moisture or oxygen, pixel shrinkage in which the emission area EA is reduced may occur, or dark spots may appear in the emission area EA. Thus, the sealing member 150 blocks oxygen and moisture to protect the display device.The sealing element 150 may include a first encapsulation layer, a second encapsulation layer and a third encapsulation layer.The first encapsulation layer may be disposed on the second electrode 133 to suppress the ingress of moisture or oxygen. The first encapsulation layer may be formed of an inorganic material such as, but not limited to, silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AlyOz).The second encapsulation layer may be arranged on the first encapsulation layer for flattening the surface of the first encapsulation layer. Likewise, the second encapsulation layer may cover foreign materials or particles that may be generated during a manufacturing process of the display device. The second encapsulation layer may be formed of an organic material such as, but not limited to, silicon oxy-carbon (SiOxZ) or acrylic- or epoxy-based resin.The third encapsulation layer may be disposed on the second encapsulation layer, like the first encapsulation layer, for suppressing the ingress of moisture or oxygen. The third encapsulation layer may be formed of an inorganic material such as, but not limited to, silicon nitride (SiNx), silicon oxynitride (SiNxOy), silicon oxide (SiOx), or aluminum oxide (AlyOz)As described above, a common layer of a plurality of light emitting elements 130 may be formed as a single layer across a plurality of subpixels. Since the light emitting elements 130 of the plurality of sub-pixels share the common layer, when the light emitting element 130 of a specific sub-pixel emits light, a current may flow to the light emitting element 130 of an adjacent sub-pixel. That is, current leakage may occur. The current leakage causes the light emitting element 130 of an unintentional subpixel to emit light, which may result in color mixing between the plurality of subpixels and an increase in power consumption. Also, an abnormal color, Mura, and the like may be observed due to leakage current, which may degrade display quality. For example, when only the first subpixel of the plurality of subpixels emits light, a portion of the current supplied to drive the light emitting element 130 of the first subpixel may leak to the second subpixel and / or the third subpixel adjacent thereto through the common layer.In the display device according to the present disclosure, the protrusion 140 is formed in the second non-emission region NEA 2, that is, an inclined side surface of the bank 114, as described above. Thus, current leakage through the common layer of the light emitting element can be minimized. First, the protrusion 140 is formed on the inclined side surface of the bank 114, and the organic layer 132 and the second electrode 133 are disposed on the protrusion 140. Therefore, the length of a leakage flow path may increase. Since the common layer of the organic layer 132 acting as a lateral leakage current flow path is formed over the protrusion 140 protruding from the bank 114, a leakage current flow path may be extended regardless of whether or not the organic layer 132 is interrupted. Accordingly, it is possible to reduce leakage current flowing to the light emitting element 130 of an adjacent subpixel. The organic layer 132 is divided into a first organic layer disposed at the opening OP and a second organic layer disposed from the first non-emission region NEA 1 of the bank 114 to an upper portion of the protrusion 140. Here, an end of the second organic layer is disposed at a distance from the first organic layer on a side surface of the protrusion 140.Also, in the display device according to the present disclosure, the protrusion 140 is disposed in the second non-emission region NEA 2, that is, the inclined side surface of the bank 114. Thus, the organic layer 132 and the second electrode 133 may be at least partially interrupted between adjacent subpixels. Accordingly, it is possible to minimize a leakage current flowing to an adjacent subpixel.FIGS. 3B and 4 illustrate an example in which the organic layer 132 and the second electrode 133 are separated from each other on the right side of the protrusion 140, that is, between the emission region EA and the second non-emission region NEA 2. However, the present disclosure is not limited thereto. The organic layer 132 and the second electrode 133 may be separated from each other on the left side as well as on the right side of the protrusion 140 depending on the degree of the left side angle θ 2 at the lower base.Such an interruption structure between the organic layer 132 and the second electrode 133 may be formed on at least one side surface of the protrusion 140. Since the protrusion 140 is disposed in the second non-emission region NEA 2, that is, the inclined side surface of the bank 114, the degree of the right side angle θ 1 at the lower base of the protrusion 140 with respect to a horizontal plane can be substantially increased. This will be described in detail with reference to FIG. 5.FIG. 5 is a diagram for explaining an angle range of a protrusion according to the present disclosureFIG. 5 is a diagram for explaining the protrusion 140, for example, a center portion of the protrusion 140, according to the first exemplary embodiment of the present disclosure and as illustrated in FIG. 3B.Referring to FIG. 5, the right side angle θ 1 at the lower base of the protrusion 140 of the present disclosure may have an acute angle greater than 90°- α for having the breaking structure. Also, the left side angle θ 2 at the lower base of the protrusion 140 may have an acute angle.In this case, the protrusion 140 may be formed of an organic material or an inorganic material.Further, the protrusion 140 may be formed of a metal material. When the protrusion 140 is formed of a metal, it is possible to completely block a lateral leakage current by discharge (or ground) in an initialization timing period.Here, α refers to the angle between the upper surface of the bank 114 on which the protrusion 140 is disposed and a horizontal line. That is, α refers to the angle between the substrate 110 and a tangent of the upper surface of the bank 114 on which the protrusion 140 is disposed in the second non-emission region NEA 2. Here, the horizontal line may be in the same direction as a deposition direction of the organic layer 132.Also, β refers to the angle between the upper surface of the bank 114 on which the protrusion 140 is disposed and a vertical line.Furthermore, γ 1 and γ 2 are illustrated as examples of the right side angle θ 1 at the lower base of the protrusion 140.When the right side angle θ 1 at the lower base of the protrusion 140 approaches a right angle (90°), it is more advantageous for the cut structure regardless of a taper angle of the bank 114. However, the present disclosure is not limited thereto. The right side angle θ 1 at the end of the lower base of the protrusion 140 may also be 90°.Since α has a value equal to 90° - β, the right side angle θ1 at the lower base of the protrusion 140 needs to have an acute angle larger than β. This is because, when the right side angle θ 1 at the lower base of the protrusion 140 is equal to the angle formed with the horizontal angle, the organic layer 132 and the cathode 133 may also be disposed on a side surface of the protrusion 140. However, the right side angle θ 1 at the lower base of the protrusion 140 needs to have an acute angle that is significantly larger than β in consideration of diffraction and interference regions during deposition of the organic layer 132.Further, the right side angle θ 1 at the lower base of the protrusion 140 of the present disclosure may have an obtuse angle smaller than 120°. When the right side angle θ 1 at the lower base is 120° or more, the protrusion 140 may collapse due to a large difference in length between the upper base and the lower base. However, the present disclosure is not limited thereto. A range of the obtuse angle may vary depending on the height of the protrusion 140 or a critical dimension CD. The left side angle θ 2 at the lower base of the protrusion 140 may also have an obtuse angle.In this case, the protrusion 140 may be formed of an organic material such as a chemically amplified resist (CAR)-based negative photoresist (PR) forming a cross-link.Here, when the angles θ 1 and θ 2 at the lower base of the protrusion 140 of the present disclosure have acute angles and at least a part of the protrusion 140 is disposed in the second non-emission region NEA 2, the cut-off structure may be formed. When the angles θ 1 and θ 2 at the lower base of the protrusion 140 are obtuse angles, the cut-off structure may be formed in any region.Also, even when the protrusion 140 of the present disclosure is disposed in the second non-emission region NEA 2, it is possible to achieve more stable workability in a region where the tangent angle of the cone of the bank 114 is 45° or less than in a region where the tangent angle is 45° to 90°.Here, a protrusion of the present disclosure may be disposed on both side surfaces of a dam as described above. This will be described in detail according to a second exemplary embodiment of the present disclosure.FIG. 6A is an enlarged plan view of a subpixel according to a second exemplary embodiment of the present disclosure.FIG. 6B is a cross-sectional view taken along a line VI-VI' of FIG. 6A.The second exemplary embodiment of the foregoing disclosure illustrated in FIGS. 6A and 6B has substantially the same configuration as the first exemplary embodiment of the present disclosure except that protrusions 240A and 240B are disposed on both side surfaces of the bank 114, that is, on both edges of the opening OP, and thus an organic layer 232 and a cathode 233 are interrupted on both edges of the opening OP. Hereinafter, the cathode 233 is sometimes referred to as the second electrode 233. Thus, repeated description will be omitted.FIG. 6A illustrates an example in which the subpixel has a hexagonal shape, but the present disclosure is not limited to the shape of the subpixel. For convenience of description, FIG. 6B does not illustrate a lower structure below the overcoat layer 113.For convenience of description, FIG. 6A illustrates only a first electrode 231 and the bank 114 among the components of a light emitting element 230. Hereinafter, the first electrode 231 is sometimes referred to as the anode 231. The bank 114 may be disposed in any region other than a region exposed by the opening OP.Referring to FIGS. 6A and 6B, in a display device according to the second exemplary embodiment of the present disclosure, the protrusions 240 aand 240 bmay be disposed on the both side surfaces of the bank 114 (that is, both edges of the opening OP).Two or more protrusions 240 aand 240 bmay be disposed on the both side surfaces of the bank 114.As illustrated in FIG. 6A, the protrusions 240 aand 240 bmay be disposed so as to surround a part of the first electrode 231 of the subpixel. Alternatively, the protrusions 240 aand 240 bmay be disposed at the edges of the first electrode 231 along the shape of the opening OP of the subpixel, but the present disclosure is not limited thereto.The protrusions 240 aand 240 bare separated from each other as a first protrusion 240 aand a second protrusion 240 b, but the present disclosure is not limited thereto. The first protrusion 240 aand the second protrusion 240 bmay extend so as to be connected to each other at an upper or lower portion. The first protrusion 240 aand the second protrusion 240 bmay be arranged at edges of the first electrode 231 of the subpixel so as to form a connection between the second electrodes 233 between adjacent subpixels. Alternatively, the protrusions 240 aand 240 bof the present disclosure may be at least partially disposed in a first non-emission region rather than a second non-emission region.Furthermore, the protrusions 240 aand 240 bmay be disposed so as to partially overlap the first electrode 231 among the protrusions 240 aand 240 b, but the present disclosure is not limited thereto.Each of the protrusions 240 aand 240 bof the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but the present disclosure is not limited thereto. In this case, two angles at the ends of the lower base may be acute or obtuse in a predetermined range. Each of the protrusions 240 aand 240 bof the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusions 240 aand 240 bof the present disclosure may be formed of a material different from the dam 114, but the present disclosure is not limited thereto. The protrusions 240 aand 240 bof the present disclosure may be formed of the same material as the bank 114, and in this case, the protrusions 240 aand 240 band the bank 114 may be formed in the same process.The protrusions 240 aand 240 bmay be patterned together with the bank 114.Here, in the second exemplary embodiment of the present disclosure, the protrusions 240 aand 240 bare formed on the two inclined side surfaces of the bank 114. The organic layer 232 and the second electrode 233 disposed on the first electrode 231 may be separated from each other at the both inclined side surfaces of the bank 114. Therefore, in the second exemplary embodiment of the present disclosure, current leakage can be more effectively minimized than in the first exemplary embodiment of the present disclosure. Also, when the protrusions 240 aand 240 bare symmetrically disposed at a left edge and a right edge of the opening OP, a viewing angle can be improved.As described above, a protrusion of the present disclosure may be arranged to surround a first electrode of a subpixel and at least partially overlap a first non-emission region rather than a second non-emission region. This will be described in detail according to a third exemplary embodiment of the present disclosure.FIG. 7A is an enlarged plan view of a subpixel according to the third exemplary embodiment of the present disclosure.FIG. 7B is a cross-sectional view taken along a line VIIa-VIIa' of FIG. 7A.FIG. 7C is a cross-sectional view taken along a line VIIb-VIIb' of FIG. 7A.The third exemplary embodiment of the present disclosure illustrated in FIGS. 7A to 7C has substantially the same configuration as the first exemplary embodiment of the present disclosure except that a protrusion 340 is disposed so as to surround the first electrode 231 of the subpixel and is disposed at least partially in the first non-emission region NEA 1 rather than the second non-emission region NEA 2. Thus, repeated description will be omitted.FIG. 7B is a cross-sectional view of a left portion and a right portion of the subpixel taken along line VIIa-VIIa' of FIG. 7A. FIG. 7C is a cross-sectional view of a lower portion of the subpixel taken along line VIIb-VIIb' of FIG. 7A.FIG. 7B illustrates a cross-sectional view of the second non-emission region NEA 2 and the emission region EA, and FIG. 7C illustrates a cross-sectional view of the first non-emission region NEA 1 and the second non-emission region NEA 2 and the emission region EA.FIG. 7A illustrates an example in which the subpixel has a hexagonal shape, but the present disclosure is not limited to the shape of the subpixel. For convenience of description, FIGS. 7B and 7C do not illustrate a lower structure below the overcoat layer 113.For convenience of description, FIG. 7A illustrates only the anode 231 and the bank 140 among the components of a light emitting element 230. The bank 114 may be disposed in any region other than a region exposed by the opening OP.Referring to FIGS. 7A and 7B, in a display device according to the third exemplary embodiment of the present disclosure, the protrusion 340 may be disposed at the edges of the opening OP of the bank 114.Here, the protrusion 340 may be disposed so as to surround the entire periphery of the first electrode 231 of the subpixel. Alternatively, the protrusion 340 may be disposed at the edges of the first electrode 231 along the shape of the opening OP of the subpixel, but is not limited thereto.In the third exemplary embodiment of the present disclosure, the protrusion 340 is disposed so as to surround the entire periphery of the first electrode 231 of the subpixel. Thus, the organic layer 232 and the second electrode 233 disposed on the first electrode 231 may be separated from each other at at least an upper portion and at a left edge and a right edge of the opening OP. Therefore, in the third exemplary embodiment of the present disclosure, current leakage can be more effectively minimized than in the first exemplary embodiment and the second exemplary embodiment of the present disclosure.Further, the protrusion 340 may be disposed to partially overlap the first electrode 231 under the protrusion 340, but is not limited thereto.The protrusion 340 of the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. In this case, two angles at the ends of the lower base may be acute or obtuse in a predetermined range. The protrusion 340 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 140 of the present disclosure may be formed of a material different from that of the dam 114, but is not limited thereto. The protrusion 340 of the present disclosure may be formed of the same material as the bank 114, and in this case, the protrusion 340 and the bank 114 may be formed in the same process.The protrusion 43 may be patterned together with the bank 114.Referring to FIGS. 7A and 7C, the protrusion 340 of the present disclosure may be disposed at least partially in the first non-emission region NEA 1 rather than the second non-emission region NEA 2 to form a connection between the second electrodes 233 between adjacent subpixels.The protrusion 340 disposed in the first non-emission area NEA 1 may have a smaller angle with respect to the horizontal line at the lower base than the protrusion 340 disposed at the inclined side surface of the bank 114, that is, in the second non-emission area NEA 2. Thus, the organic layer 232 and the cathode 233 may be continuously arranged with the protrusion 340 interposed therebetween without a discontinuity.Here, two substrates may be provided for suppressing the invasion of moisture and supporting the components. This will be described in detail according to a fourth exemplary embodiment of the present disclosure.FIG. 8 is a cross-sectional view of a subpixel according to the fourth exemplary embodiment of the present disclosure.The fourth exemplary embodiment of the present disclosure illustrated in FIG. 8 has substantially the same configuration as the first exemplary embodiment of the present disclosure except that two substrates 410 aand 410 bare provided. Thus, repeated description will be omitted.FIG. 8 illustrates an example of a lower structure, but the present disclosure is not limited thereto.For convenience of description, FIG. 8 illustrates only one transistor 120 of the plurality of transistors and the capacitor of the pixel circuit in the subpixel.Referring to FIG. 8, a display device according to the fourth exemplary embodiment of the present disclosure may include the first substrate 410 aand the second substrate 410 b, the transistor 120, the light emitting element 130, the overcoat layer 113, the bank 114, and the sealing member 150. The display device may be implemented as a top emission type, but is not limited thereto.That is, the display device according to the fourth exemplary embodiment may include the first substrate 410 aand the second substrate 410 b, and may further include a buffer layer 415 between the first substrate 410 aand the second substrate 410 b.The first substrate 410 aand the second substrate 410 bare support members for supporting the other components of the display device, and may be formed of an insulating material. For example, the first substrate 410 aand the second substrate 410 bmay be formed of a material including plastic such as polymer or polyimide PI, or may be formed of a material including flexibility. Likewise, a buffer layer 415 may be formed as a single layer of silicon oxide (SiOx) or silicon nitride (SiNx), or a multilayer layer of silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.The transistor 120 illustrated in FIG. 8 has a structure in which the active layer 122 is disposed on the gate electrode 121, and the source electrode 123 and the drain electrode 124 are disposed on the active layer 122. That is, the transistor 120 has a bottom gate structure in which the gate electrode 121 is positioned as the lowermost layer, but the present disclosure is not limited thereto.FIG. 8 illustrates an example in which a protrusion 140 is disposed on a side surface of the bank 114 (that is, in the second non-emission region NEA 2), but the present disclosure is not limited thereto. The protrusion 140 of the present disclosure may be disposed on both side surfaces of the bank 114 (that is, in the second non-emission region NEA 2), or two or more protrusions 140 may be disposed on at least one side surface of the bank 114.Also, the protrusion 140 of the present disclosure may be disposed to surround the first electrode 131 of the subpixel except for a part of the edges of the first electrode 131 of the subpixel. Alternatively, the protrusion 140 of the present disclosure may be disposed at least partially in the first non-emission region NEA 1 rather than the second non-emission region NEA 2.Furthermore, the protrusion 140 of the present disclosure may include two or more parts on at least a part of the edges of the first electrode 131 along the shape of the opening of the subpixel.Here, taking the function of each of a plurality of transistors of a pixel circuit into consideration, active layers may be formed of materials different from each other. This will be described in detail according to a fifth exemplary embodiment of the present disclosure.FIG. 9 is a cross-sectional view of a subpixel according to the fifth exemplary embodiment of the present disclosure.The fifth exemplary embodiment of the present disclosure illustrated in FIG. 9 has substantially the same configuration as the display device illustrated in FIG. 8, except for transistors 520 aand 520 b. Thus, repeated description will be omitted.FIG. 9 illustrates an example of a lower structure, but the present disclosure is not limited thereto.For convenience of description, of the plurality of transistors of the pixel circuit in the subpixel, FIG. 9 illustrates only the first transistor 520 aand the second transistor 520 b.Referring to FIG. 9, a display device according to the fifth exemplary embodiment of the present disclosure may include the first substrate 310 aand the second substrate 310 b, the first transistor 520 aand the second transistor 520 b, the light emitting element 130, the overcoat layer 113, the bank 114, and the sealing member 115.That is, the display device according to the fifth exemplary embodiment may include the first substrate 310 aand the second substrate 310 b, and may further include the buffer layer 311 bbetween the first substrate 310 aand the second substrate 310 b.FIG. 9 illustrates an example in which a protrusion 140 is disposed on a side surface of the bank 114 (that is, in the second non-emission region NEA 2), but the present disclosure is not limited thereto. The protrusion 140 of the present disclosure may be disposed on both side surfaces of the bank 114 (that is, in the second non-emission region NEA 2), or two or more protrusions 140 may be disposed on at least one side surface of the bank 114.Also, the protrusion 140 of the present disclosure may be disposed to surround the first electrode 131 of the subpixel except for a part of the edges of the first electrode 131 of the subpixel. Alternatively, the protrusion 140 of the present disclosure may be at least partially disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2.The first substrate 310 aand the second substrate 310 bare support members for supporting the other components of the display device, and may be formed of an insulating material. For example, the first substrate 310 aand the second substrate 310 bmay be formed of a material including plastic such as polymer or polyimide PI, or may be formed of a material including flexibility. Also, the buffer layer 311 bmay be formed as a single layer of silicon oxide (SiOx) or silicon nitride (SiNx), or a multilayer layer of silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.Another buffer layer 311 amay be disposed on the first substrate 310 a.The buffer layer 311 acan suppress the penetration of moisture or contaminants through the first substrate 310 a. The buffer layer 311 amay be formed as a single layer of silicon oxide (SiOx) or silicon nitride (SiNx), or a multilayer layer of silicon oxide (SiOx) and silicon nitride (SiNx), but is not limited thereto.Although not illustrated in the drawings, another buffer layer may be disposed on the buffer layer 311 ain turn.The still other buffer layer may suppress the intrusion of ions or impurities generated during the crystallization of the first transistor 520 a.The first transistor 520 aand the second transistor 520 bmay be disposed on the buffer layer 311 a.The first transistor 520 amay include a first active layer 522 a, a first gate electrode 521 a, a first source electrode 523 aand a first drain electrode 524 a.The second transistor 520 bmay include a second active layer 522 b, a second gate electrode 521 b, a second source electrode 523 band a second drain electrode 524 b.The first active layer 522 amay be disposed on the buffer layer 311 a.For example, the first active layer 522 amay be formed of low temperature polysilicon LTPS. The polysilicon has high mobility, low power consumption and excellent reliability. Thus, the polysilicon can be applied to a driving transistor and the like.A gate insulating layer 312 may be disposed on the first active layer 522 a.The first gate electrode 521 amay be disposed on the gate insulating layer 312.A first storage electrode ST 1 and a light shielding layer 525 bmay be disposed on the gate insulating layer 312.The light shielding layer 525 bis disposed so as to overlap the second active layer 522 bof the second transistor 520 band protect the second transistor 520 bfrom light or moisture entering from the outside. Thus, the light shielding layer 525 bcan minimize a change in the element characteristics of the second transistor 520 b. Although FIG. 9 illustrates that the light shielding layer 525 bis floating, the light shielding layer 525 bmay be electrically connected to another component such as a plurality of wirings, but the present disclosure is not limited thereto.An interlayer insulating layer 313 may be disposed on the first gate electrode 521 a, the first storage electrode ST 1, and the light shielding layer 525 b.A second storage electrode ST 2 may be disposed on the interlayer insulating layer 313 so as to overlap a part of the first storage electrode ST 1.A first passivation layer 314 aand a second passivation layer 314 bmay be disposed on the second storage electrode ST 2. The first passivation layer 314 aand the second passivation layer 314 bmay include contact holes for connection between the first source electrode 523 aand the first drain electrode 524 a, respectively, and the first active layer 522 a. Likewise, the second passivation layer 314 bmay include contact holes for connection between the second source electrode 523 band the second drain electrode 524 band the second active layer 522 b, respectively.The second active layer 522 bmay be disposed on the first passivation layer 314 a.The second active layer 522 bmay be formed of an oxide semiconductor material. The oxide semiconductor material has a larger band gap than silicon, so that an electron cannot cross the band gap in an off state and an off current is small. Therefore, a transistor formed of the oxide semiconductor material can be applied to a switching transistor that remains on for a short time and off for a long time.A gate insulating layer may be disposed on the second active layer 522 band the second gate electrode 521 bmay be disposed on the gate insulating layer.The gate insulating layer may be patterned in the same manner as the second gate electrode 521 b.The first source electrode 523 aand the first drain electrode 524 amay be disposed on the second passivation layer 314 b. The first source electrode 523 aand the first drain electrode 524 a, which are spaced apart from each other, may be electrically connected to the first active layer 522 a. Likewise, the second source electrode 523 band the second drain electrode 524 bmay be disposed on the second passivation layer 314 b. The second source electrode 523 band the second drain electrode 524 bdisposed at a distance from each other may be electrically connected to the second active layer 522 b.The overcoat layer 113 may be disposed on the second passivation layer 314 b.FIG. 9 illustrates an example in which the first active layer 522 aof the first transistor 520 ais formed of LTPS, and the second active layer 522 bof the second transistor 520 bis formed of the oxide semiconductor material. However, the first active layer 522 amay be formed of the oxide semiconductor material or the second active layer 522 bmay be formed of LTPS, but the present disclosure is not limited thereto.In the display device according to the fifth exemplary embodiment of the present disclosure, a plurality of transistors 520 aand 520 bof the pixel circuit are composed of types different from each other. Thus, it is possible to improve the performance of the pixel circuit. The pixel circuit includes the plurality of transistors 520 aand 520 band a capacitor, and the plurality of transistors 520 aand 520 bmay be transistors of types different from each other. For example, in the first transistor 520 aof the plurality of transistors 520 aand 520 b, the first active layer 522 amay be formed of LTPS. Also, in the second transistor 520 b, the second active layer 522 bmay be formed of the oxide semiconductor material. The first transistor 520 aincluding LTPS has high mobility and low power consumption, and thus can be applied to a driving transistor. The second transistor 520 bincluding the oxide semiconductor material remains turned on for a short period of time and turned off for a long period of time, and thus can be applied to a switching transistor. Therefore, in the display device according to the fifth exemplary embodiment of the present disclosure, the first active layer 522 aand the second active layer 522 bmay be formed of materials different from each other in consideration of the function of each of the plurality of transistors 520 aand 520 bof the pixel circuit. Also, the performance of the pixel circuit can be improved.As described above, angles at the ends of the lower base of a protrusion of the present disclosure may be obtuse. This will be described in detail according to a sixth exemplary embodiment of the present disclosure.FIGS. 10A and 10B are cross-sectional views of a subpixel according to the sixth exemplary embodiment of the present disclosure.The sixth exemplary embodiment of the present disclosure illustrated in FIGS. 10A and 10B has substantially the same configuration as the first exemplary embodiment of the present disclosure except that two angles (θ1, θ2) at the ends of the lower base of a protrusion 640 are obtusely angled. Thus, repeated description will be omitted.For convenience of description, FIG. 10B is an enlarged view of FIG. 10A with a lower structure omitted below the overcoat layer 113.Referring to FIGS. 10A and 10B, in a display device according to the sixth exemplary embodiment of the present disclosure, the protrusion 640 may be disposed on a side surface of the bank 114 (that is, on an edge of the opening OP). However, as described above, the present disclosure is not limited thereto, and the protrusion 640 may be disposed on both side surfaces of the bank 114.Likewise, two or more protrusions 640 may be disposed on at least one side surface of the bank 114.The protrusion 640 may be arranged to surround at least a part of the first electrode 131 of the subpixel. Alternatively, the protrusion 640 may be disposed at the edges of the first electrode 131 along the shape of the opening OP of the subpixel, but is not limited thereto.The protrusion 640 may be divided into a plurality of parts, but the present disclosure is not limited thereto. That is, the protrusion 640 may be interrupted at a part of the edges of the first electrode 131 and may be divided into a plurality of parts. Here, the protrusion 640 may not be disposed at a part of the edges of the first electrode 131 of the subpixel to form a connection between the second electrodes 133 between adjacent subpixels. Alternatively, the protrusion 640 of the present disclosure may be at least partially disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2.Further, the protrusion 640 may be disposed to partially overlap the first electrode 131 under the protrusion 640, but is not limited thereto.The protrusion 640 of the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. In this case, two angles (θ1, θ2) at the ends of the lower base may be obtuse in a predetermined range. The protrusion 640 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 640 of the present disclosure may be formed of a material different from the bank 140, but is not limited thereto. The protrusion 640 of the present disclosure may be formed of the same material as the bank 114, and in this case, the protrusion 640 and the bank 114 may be formed in the same process.The protrusion 640 may be patterned together with the bank 114.The right side angle θ 1 at the lower base of the protrusion 640 according to the sixth exemplary embodiment of the present disclosure may have an obtuse angle smaller than 120°. When the right side angle θ 1 at the lower base is 120° or more, the protrusion 640 may collapse due to a large difference in length between the upper base and the lower base. However, the present disclosure is not limited thereto. A range of the obtuse angle may vary depending on the height of the protrusion 640 or a critical dimension CD. The left side angle θ 2 at the lower base of the protrusion 640 may also have an obtuse angle.In this case, the protrusion 640 may be formed of an organic material such as a chemically amplified resist (CAR)-based negative photoresist (PR) forming a cross-link.A protrusion of the present disclosure may be formed of the same material as a bank and may be patterned together with the bank. This will be described in detail according to a seventh exemplary embodiment of the present disclosure.FIGS. 11A and 11B are cross-sectional views of a subpixel according to the seventh exemplary embodiment of the present disclosure.The seventh exemplary embodiment of the present disclosure illustrated in FIGS. 11A and 11B has substantially the same configuration as the first exemplary embodiment of the present disclosure except that a protrusion 714 ais formed of the same material as a bank 714 and is patterned together with the bank 714. Thus, repeated description will be omitted.For convenience of description, FIG. 11B is an enlarged view of FIG. 11A with a lower structure omitted below the overcoat layer 113.Referring to FIGS. 11A and 11B, in a display device according to the seventh exemplary embodiment of the present disclosure, the protrusion 714 amay be disposed on a side surface of the bank 714 (that is, on an edge of the opening OP). However, the present disclosure is not limited thereto, and the protrusion 714 amay be disposed on both side surfaces of the bank 714.Likewise, two or more protrusions 714 amay be disposed on at least one side surface of the bank 714.The protrusion 714 amay be arranged to surround at least a part of the first electrode 131 of the subpixel. Alternatively, the protrusion 714 amay be disposed at the edges of the first electrode 131 along the shape of the opening OP of the subpixel, but is not limited thereto.The protrusion 714 amay be divided into a plurality of parts, but the present disclosure is not limited thereto. That is, the protrusion 714 amay be interrupted at a part of the edges of the first electrode 131 and may be divided into a plurality of parts. Here, the protrusion 714 amay not be disposed at a part of the edges of the first electrode 131 of the subpixel to form a connection between the second electrodes 133 between adjacent subpixels. Alternatively, the protrusion 714 aof the present disclosure may be at least partially disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2.Further, the protrusion 714 amay be disposed to partially overlap the first electrode 131 under the protrusion 714 a, but is not limited thereto.The protrusion 714 aof the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. In this case, two angles at the ends of the lower base may be acute or obtuse in a predetermined range. The protrusion 714 aof the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 714 aof the present disclosure may be formed of the same material as the bank 714, and in this case, the protrusion 714 aand the bank 714 may be manufactured in the same process.The bank 714 and the protrusion 714 amay be an organic material. For example, the bank 714 and the protrusion 714 amay be formed of an organic material such as, but not limited to, polyimide or acrylic or benzocyclobutene (BCB)-based resin.For example, when the bank 714 and the protrusion 714 aare formed of polyimide, the bank 714 and the protrusion 714 amay have a refractive index of about 1.6.The bank 714 and the protrusion 714 amay be patterned together. In this case, a half tone mask, a triple tone mask or a multi tone mask may be used. In this case, a spacer may also be formed together with the protrusion 714 a.In particular, in the seventh exemplary embodiment of the present disclosure, it is not necessary to align the bank 714 and the protrusion 714 a, which is advantageous for processing.Here, as described above, two or more protrusions may be disposed on at least one side surface of a dam. This will be described in detail according to an eighth exemplary embodiment of the present disclosure.FIG. 12A is an enlarged plan view of a subpixel according to the eighth exemplary embodiment of the present disclosure.FIG. 12B is a cross-sectional view taken along a line XII-XII' of FIG. 12A.The eighth exemplary embodiment of the present disclosure illustrated in FIGS. 12A and 12B has substantially the same configuration as the first exemplary embodiment of the present disclosure except that two protrusions 840 aand 840 b, namely, a first protrusion and a second protrusion, are disposed on a side surface of the dam 114. Thus, repeated description will be omitted.FIG. 12A illustrates an example in which the subpixel has a hexagonal shape, but the present disclosure is not limited to the shape of the subpixel. For convenience of description, FIG. 12B does not illustrate a lower structure below the overcoat layer 113.For convenience of description, of the components of the light emitting element 130, FIG. 12A illustrates only the first electrode 131 and the bank 114. The bank 114 may be disposed in any region other than a region exposed by the opening OP.Referring to FIGS. 12A and 12B, in a display device according to the eighth exemplary embodiment of the present disclosure, the first protrusion 840 aand the second protrusion 840 bmay be disposed on a side surface of the bank 114 (i.e., on an edge of the opening OP).Alternatively, the two protrusions 840 aand 840 b, the first protrusion and the second protrusion, may be disposed on both side surfaces of the bank 114. That is, two or more first protrusions 840 aand second protrusions 840 bmay be disposed on at least one side surface of the bank 114.As illustrated in FIG. 12A, the first protrusion 840 aand the second protrusion 840 bmay be disposed so as to surround a part of the first electrode 131 of the subpixel. Alternatively, the first protrusion 840 aand the second protrusion 840 bmay be disposed at the edges of the first electrode 131 along the shape of the opening OP of the subpixel, but the present disclosure is not limited thereto.The first protrusion 840 aand the second protrusion 840 bmay be separated from each other, but the present disclosure is not limited thereto. The lower base of the first protrusion 840 aand the lower base of the second protrusion 840 bmay be connected to each other.The first protrusion 840 aand the second protrusion 840 bmay not be disposed at a part of the edges of the first electrode 131 of the subpixel to form a connection between the second electrodes 133 between adjacent subpixels. Alternatively, the first protrusion 840 aand the second protrusion 840 bof the present disclosure may be at least partially disposed in a first non-emission region rather than a second non-emission region.Further, the first protrusion 840 aand the second protrusion 840 bmay be disposed to partially overlap the first electrode 131 among the first protrusion 840 aand the second protrusion 840 b, but are not limited thereto.Each of the first protrusion 840 aand the second protrusion 840 bof the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but the present disclosure is not limited thereto. In this case, two angles at the ends of the lower base may be acute or obtuse in a predetermined range. Each of the first protrusion 840 aand the second protrusion 840 bof the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The first protrusion 840 aand the second protrusion 840 bof the present disclosure may be formed of a material different from the bank 114, but the present disclosure is not limited thereto. The first protrusion 840 aand the second protrusion 840 bof the present disclosure may be formed of the same material as the bank 114, and in this case, the first protrusion 840 aand the second protrusion 840 band the bank 114 may be formed in the same process.The first protrusion 840 aand the second protrusion 840 bmay be patterned together with the bank 114.The first protrusion 840 aand the second protrusion 840 bmay have different sizes from each other.The first protrusion 840 aand the second protrusion 840 bmay have different heights from each other.The first protrusion 840 aand the second protrusion 840 bmay be disposed at positions different from each other.In the eighth exemplary embodiment of the present disclosure, at least two protrusions 840 aand 840 b, a first protrusion and a second protrusion, are formed on at least one side surface of the bank 114. Therefore, the length of a current path can be increased. Also, when the angles are adjusted at the ends of the lower base of the first protrusion 840 aand the second protrusion 840 b, the organic layer 132 and the second electrode 133 may be interrupted at a side surface of the second protrusion 840 b. Further, the organic layer 132 and the second electrode 133 may be interrupted at a side surface of the first protrusion 840 a, that is, between the first protrusion 840 aand the second protrusion 840 b. Therefore, in the eighth exemplary embodiment of the present disclosure, current leakage can be more effectively minimized than in the first exemplary embodiment of the present disclosure.An interrupt structure of the present disclosure may be formed by an additional mask process or may be formed by a mask process for forming a conventional bank or spacer. This will be described in detail with reference to the accompanying drawings.FIGS. 13A to 13D are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to the third exemplary embodiment of the present disclosure.For convenience of explanation, description will be made with omission of a lower structure below the overcoat layer 113.Referring to FIG. 13A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.The overcoat layer 113 is an insulating layer configured to flatten an upper portion of the substrate. The overcoat layer 113 may be formed of an organic material. The overcoat layer 113 may be formed as a single layer of, for example, polyimide or photoacryl, or a multilayer of polyimide and photoacryl, but is not limited thereto.The overcoat layer 113 may be formed to a thickness of about 2 μm, but is not limited thereto.A plurality of light emitting elements may be formed in a plurality of subpixels on the overcoat layer 113. Each light emitting element may include the first electrode 231, an organic layer, and a second electrode.First, the first electrode 231 is formed on the overcoat layer 113.The first electrode 231 may be electrically connected to a transistor, and thus may be supplied with a driving current from a pixel circuit. The first electrode 231 may be formed to supply holes to an emission layer of a conductive material having high leakage energy. The first electrode 231 may be formed of a light transmissive conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.The display device may be implemented as a top emission type or a bottom emission type. Further, in the case of the top emission type display device, a reflective layer formed of a metal material having high reflection efficiency, such as aluminum Al or silver Ag, may be disposed below the first electrode 231. In the case of the bottom emission type display device, the first electrode 231 may be formed of only a light transmissive conductive material. Hereinafter, the description will be made on the assumption that the display device of the present disclosure is a top emission display device.For example, the first electrode 231 may have a stack structure of two or more layers including a reflective layer.The first electrode 231 may be formed to a thickness of about 0.1 μm, but is not limited thereto.Then, referring to FIG. 13B, the bank 114 and a spacer 360 are formed on the substrate on which the first electrode 231 has been formed.The bank 114 and the spacer 360 may be formed in the same mask process and in different mask processes, respectively.The bank 114 may include the opening OP through which a part of the first electrode 231 is exposed. The bank 114 may be an organic insulating material disposed so as to cover an edge or a peripheral portion of the first electrode 231. The dam 114 may be formed of polyimide or acrylic or benzocyclobutene (BCB)-based resin, but is not limited thereto.The spacer 360 may be formed on the flat top surface of the bank 114, that is, on a first non-emission region. The spacer 360 may be disposed on the bank 114 so as to maintain a predetermined distance from a deposition mask when a light emitting element is formed. A predetermined distance between the bank 114 and the first electrode 231 under the spacer 360 and the deposition mask may be maintained by the spacer 360. Also, the spacer 360 can suppress damage caused by a contact. Here, each of a plurality of spacers 360 for minimizing a contact area with the deposition mask may be formed, for example, in a taper shape having a width decreasing toward an upper side thereof.The bank 114 and the spacer 360 may be formed to a thickness of, but are not limited to, 1 μm to 2 μm and 1.5 μm to 2.5 μm, respectively.Then, referring to FIG. 13C, a photoreactive organic material is applied to the entire surface of the substrate.The photoreactive organic material may include a photoresist PR.Here, a positive type PR may be used. In this case, a protrusion having a normal taper shape may be formed.The PR may be applied to a thickness of 0.5 μm or less, but is not limited thereto.Then, for forming the protrusion 340, exposure and development are performed on a side surface of the bank 114, that is, in a second non-emission region, using a predetermined mask 390.Here, since the positive type PR is used, a blocking portion of the mask 390 can be positioned corresponding to the protrusion 340 to be formed.The protrusion 340 may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. The protrusion 340 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 340 may have a normal cone shape, i.e., an acute angle at the ends of the lower base.Then, referring to FIG. 13D, the protrusion 340 is cured by a heat treatment. The curing process can suppress downward flow of the protrusion 340 formed of an organic material caused by the taper shape.Here, the formed protrusion 340 may have a lower height than the spacer 360.Then, an organic layer and a cathode may be formed. As described above, the organic layer and the cathode may be separated from each other at both edges of the opening OP. Processes after the formation of the organic layer are substantially the same as in the conventional processes, and thus a description thereof will be omitted.FIGS. 14A to 14D are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to the sixth exemplary embodiment of the present disclosure.The manufacturing process of a display device according to the sixth exemplary embodiment of the present disclosure illustrated in FIGS. 14A to 14D is substantially the same as the manufacturing process illustrated in FIGS. 13A to 13D except that a negative type PR is used as an organic material. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 14A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Thereafter, referring to FIG. 14B, the bank 114 and the spacer 360 are formed on the substrate on which the first electrode 231 has been formed.Then, referring to FIG. 14C, a photoreactive organic material is deposited on the entire surface of the substrate.The photoreactive organic material may include a PR.Here, a negative type PR may be used. In this case, a protrusion having an inverted taper shape may be formed.The PR may be applied to a thickness of about 1.5 μm, but is not limited thereto.Then, exposure and development are performed to form the protrusion 640 on a side surface of the bank 114, that is, in a second non-emission region, using a predetermined mask 690.Here, since the negative type PR is used, a transmission area of the mask 690 can be positioned corresponding to the protrusion 640 to be formed.The protrusion 640 may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. The protrusion 640 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular-cornered shape, or a bell shape.The protrusion 640 may have an inverted cone shape, i.e., with obtuse angles at the ends of the lower base. In this case, a stable interrupting structure can be formed due to the inverted taper shape.Then, referring to FIG. 14D, the protrusion 640 may be cured by a heat treatment.Here, the formed protrusion 640 may have a lower height than the spacer 360.Here, when the protrusions 340 and 640 are formed by an additional mask process, an inorganic material may be used instead of the above-described organic material. In the case where an inorganic material is used, it is easy to control the taper shape and height of the protrusions 340 and 640.FIGS. 15A to 15D are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the third exemplary embodiment of the present disclosureAnother manufacturing process of a display device according to the third exemplary embodiment of the present disclosure illustrated in FIGS. 15A to 15D is substantially the same as the manufacturing process illustrated in FIGS. 13A to 13D except that a protrusion is formed using a fine metal mask FMM made of an inorganic material. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 15A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Thereafter, referring to FIG. 15B, the bank 114 and the spacer 360 are formed on the substrate on which the first electrode 231 has been formed.Then, referring to FIGS. 15C and 15D, an FMM, which is a deposition mask 390', is disposed over the substrate.Thereafter, an inorganic material such as a silicon oxide (SiOx) is deposited by the deposition mask 390', so that a protrusion 340' is formed on a side surface of the bank 114, that is, in a second non-emission region.In this case, the protrusion 340' having a normal cone shape may be deposited.The protrusion 340' may be formed to a thickness of about 0.7 μm to 1.5 μm, but is not limited thereto.BOE etching is then performed using a buffered oxide etch solution.When the protrusion 340' is formed using the deposition mask 390', it is possible to suppress damage to an exposed region caused by exposure and development.FIGS. 16A to 16F are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the third exemplary embodiment of the present disclosure.Another manufacturing process of a display device according to the third exemplary embodiment of the present disclosure illustrated in FIGS. 16A to 16F is substantially the same as the manufacturing process illustrated in FIGS. 13A to 13D except that a protrusion is formed of an inorganic material or a metal. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 16A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Thereafter, referring to FIG. 16B, the bank 114 and the spacer 360 are formed on the substrate on which the first electrode 231 has been formed.Then, referring to FIG. 16C, a first layer 370 and a second layer 380 are formed on the entire surface of the substrate.The first layer 370 is provided to form a protrusion, and may be formed of an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), or a conductive material such as Mo or Cu.The inorganic material may be deposited by chemical vapor deposition CVD, and the metal may be deposited by sputtering.The second layer 180 may be formed of a photoreactive organic material such as a PR.Here, a positive type PR may be used. In this case, a protrusion having a normal taper shape may be formed.Then, referring to FIG. 16D, a predetermined mask 390 is disposed over the substrate on which the first layer 370 and the second layer 380 have been formed.Thereafter, the second layer is selectively exposed through the mask 390 to thereby form a first PR pattern 380' and a second PR pattern 380" formed of the second layer.The exposed first PR pattern 380' can be removed using a developer solution.Then, referring to FIG. 16E, the first layer in a lower portion thereof is selectively etched using the second PR pattern 380" remaining without being removed by the developing solution as a mask. Thus, the protrusion 340 is formed on a side surface of the bank 114, that is, in a second non-emission region.Here, when the first layer is formed of an inorganic material, a BOE may be used as an etchant.The protrusion 340 may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. The protrusion 340 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular shape or a rectangular shape, or a bell shape.The protrusion 340 may have a normal conical shape, i.e., with acute angles at the ends of the lower base.Then, referring to FIG. 16F, the remaining PR pattern 380" may be removed by stripping.FIGS. 17A to 17F are cross-sectional views sequentially illustrating another manufacturing process of a part of the display device according to the sixth exemplary embodiment of the present disclosure.Another manufacturing process of a display device according to the sixth exemplary embodiment of the present disclosure illustrated in FIGS. 17A to 17F is substantially the same as the manufacturing process illustrated in FIGS. 16A to 16F except that a negative type PR is used. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 17A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Next, referring to FIG. 17B, the bank 114 and a spacer 660 are formed on the substrate on which the first electrode 231 has been formed.Then, referring to FIG. 17C, a first layer 670 and a second layer 680 are formed on the entire surface of the substrate.The first layer 670 is provided to form a protrusion, and may be formed of an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), or a conductive metal such as Mo or Cu.The second layer 680 may be formed of a photoreactive organic material, such as a PR.Here, a negative type PR may be used. In this case, a protrusion having an inverted taper shape may be formed.Then, referring to FIG. 17D, a predetermined mask 690 may be disposed over the substrate on which the first layer 670 and the second layer 680 have been formed.Thereafter, the second layer is selectively exposed through the mask such that a first PR pattern 680' and a second PR pattern 680" formed from the second layer are formed.Since the negative type PR is used, the unexposed first PR pattern 680' can be removed by a developing solution.Then, referring to FIG. 17E, the first layer in a lower portion thereof is selectively etched using the second PR pattern 680" remaining without being removed by the etching solution as a mask. Thus, the protrusion 640 is formed on a side surface of the bank 114, that is, in a second non-emission region.The protrusion 640 may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. The protrusion 640 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 640 may have an inverted cone shape, i.e., obtuse angles at the ends of the lower base. However, the present disclosure is not limited thereto. The protrusion 640 may also have a normal conical shape depending on the process conditions.Then, referring to FIG. 17F, the remaining second PR pattern 680" may be removed by stripping.Here, when the protrusions 340 and 640 are formed of an inorganic material, it is easy to form a structure having a steep inclination or the like, and it is possible to prevent the protrusions 340 and 640 from flowing down.Also, when a negative type PR is used, an exposed area can be minimized. Therefore, it is possible to minimize damage caused by exposure and development. In particular, the first electrode 231, the bank 114, and the spacer 660 cannot be exposed to the process.FIGS. 18A to 18C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a ninth exemplary embodiment of the present disclosure.In the manufacturing process of a display device according to the ninth exemplary embodiment of the present disclosure illustrated in FIGS. 18A to 18C, a bank 914, a spacer 960, and a protrusion 940 are formed by a single mask process using a halftone mask. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 18A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Next, referring to FIG. 18B, a first layer and a second layer are formed on the substrate on which the first electrode 231 has been formed.Although not illustrated in the drawings, the first layer for forming the bank 914 may be formed of an organic material, and the second layer for forming the spacer 960 and the protrusion 940 may be formed of a photoreactive organic material.The photoreactive organic material may include a PR.Then, a halftone mask 990 is placed over the substrate on which the first layer and the second layer have been formed.The halftone mask 990 may include a bank photomask portion 990 aand a spacer photomask portion 990 b.Thereafter, exposure and development for forming the bank 914, the spacer 960, and the protrusion 940 may be performed using the halftone mask 990.The bank 914, the spacer 960, and the protrusion 940 may be similar to each other at an inclination angle.Each of the spacer 960 and the protrusion 940 may have a dome shape instead of a trapezoidal shape illustrated in the drawings, but the trapezoidal shape is simpler to form a structure. Each of the spacer 960 and the protrusion 940 may have a normal cone shape, i.e., acute angles at the ends of the lower base. However, the present disclosure is not limited thereto.Then, referring to FIG. 18C, the spacer 960 and the protrusion 940 may be cured by a heat treatment.Here, the formed protrusion 940 may have the same height as the spacer 960.FIGS. 19A to 19C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a tenth exemplary embodiment of the present disclosure.The manufacturing process of a display device according to the tenth exemplary embodiment of the present disclosure illustrated in FIGS. 19A to 19C is substantially the same as the manufacturing process according to the ninth exemplary embodiment except that each of a spacer 1060 and a protrusion 1040 has a dome shape. Thus, repeated description for the same configuration and the same heart positioning process will be omitted.Referring to FIG. 19A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Next, referring to FIG. 19B, a first layer and a second layer are formed on the substrate on which the first electrode 231 has been formed.Although not illustrated in the drawings, the first layer for forming a bank 1014 may be formed of an organic material, and the second layer for forming the spacer 1060 and the protrusion 1040 may be formed of a photoreactive organic material.The photoreactive organic material may include a PR.A halftone mask 1090 is then placed over the substrate on which the first layer and the second layer have been formed.The halftone mask 1090 may include a bank photomask portion 1090a and a spacer photomask portion 1090b.Thereafter, exposure and development may be performed using the halftone mask 1090 to form the bank 1014, the spacer 1060, and the protrusion 1040.The bank 1014, the spacer 1060, and the protrusion 1040 may be similar to each other at an inclination angle.Each of the spacer 1060 and the protrusion 1040 may have a dome shape.The protrusion 1040 may be double chamfered, and its lower part may be inclined more steeply than its upper part, but is not limited thereto.Then, referring to FIG. 19C, the spacer 1060 and the protrusion 1040 may be cured by a heat treatment.FIGS. 20A to 20C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to an eleventh exemplary embodiment of the present disclosure.The manufacturing process of a display device according to the eleventh exemplary embodiment of the present disclosure illustrated in FIGS. 20A to 20C is substantially the same as the manufacturing process according to the ninth exemplary embodiment except that each of a bank 1114, a spacer 1160, and a protrusion 1140 is formed by a single mask process using a tritone mask. Thus, repeated description for the same configuration and manufacturing process will be omitted.Referring to FIG. 20A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Next, referring to FIG. 20B, a first layer and a second layer are formed on the substrate on which the first electrode has been formed.Although not illustrated in the drawings, the first layer for forming the bank 1114 may be formed of an organic material, and the second layer for forming the spacer 1160 and the protrusion 1140 may be formed of a photoreactive organic material.The photoreactive organic material may include a PR.A tritone mask 1190 is then placed over the substrate on which the first layer and the second layer have been formed.The tri-tone mask 1190 may include a bank photomask portion 1190 a, a spacer photomask portion 1190 b, and a protrusion photomask portion 1190 c.Thereafter, exposure and development may be performed using the triple-tone mask 1190 to form the bank 1114, the spacer 1160, and the protrusion 1140.The bank 1114, the spacer 1160, and the protrusion 1140 may be similar to each other at an inclination angle.Each of the spacer 1160 and the protrusion 1140 may have a trapezoidal shape.Then, referring to FIG. 20C, the spacer 1160 and the protrusion 1140 may be cured by a heat treatment.FIGS. 21A to 21C are cross-sectional views sequentially illustrating a manufacturing process of a part of a display device according to a twelfth exemplary embodiment of the present disclosure.The manufacturing process of a display device according to the twelfth exemplary embodiment of the present disclosure illustrated in FIGS. 21A to 21C is substantially the same as the manufacturing process according to the eleventh exemplary embodiment except that each of a spacer 1260 and a protrusion 1240 has a dome shape. Thus, repeated description of the same configuration and the same manufacturing process will be omitted.Referring to FIG. 21A, the overcoat layer 113 is formed on a substrate including a plurality of transistors and a capacitor.Then, the first electrode 231 is formed on the overcoat layer 113.Next, referring to FIG. 21B, a first layer and a second layer are formed on the substrate on which the first electrode 231 has been formed.Although not illustrated in the drawings, the first layer for forming a bank 1214 may be formed of an organic material, and the second layer for forming the spacer 1260 and the protrusion 1240 may be formed of a photoreactive organic material.The photoreactive organic material may include a PR.A tritone mask 1290 is then placed over the substrate on which the first layer and the second layer have been formed.The tritone mask 1290 may include a bank photomask portion 1290 a, a spacer photomask portion 1290 b, and a protrusion photomask portion 1290 c.Thereafter, exposure and development may be performed to form the bank 1214, the spacer 1260, and the protrusion 1240 using the tritone mask 1290.The bank 1214, the spacer 1260, and the protrusion 1240 may be similar to each other at an inclination angle.Each of the spacer 1260 and the protrusion 1240 may have a dome shape.Here, when the tritone mask 1190 and the tritone mask 1290 are used, the spacer 1160 and the spacer 1260 may have a different height from the protrusion 1140 and the protrusion 1240, respectively.FIG. 22 is a cross-sectional view illustrating a part of a subpixel according to the ninth exemplary embodiment of the present disclosure.FIG. 23 is a cross-sectional view illustrating a part of a subpixel according to a thirteenth exemplary embodiment of the present disclosure.FIG. 22 illustrates the layout of the general mask 990 and a cross-sectional view illustrating a portion of a subpixel formed using the same.FIG. 23 illustrates the layout of a multi-tone mask 1390 and a cross-sectional view illustrating a part of a subpixel formed using the same.Here, for convenience of explanation, illustration of a protrusion is omitted.Referring to FIGS. 22 and 23, it can be seen that when the multi-tone mask 1390 is used to form a bank 1314 and the spacer 1360, a photo-exposure area is increased compared to a case where the general mask 990 is used. Thus, an inclination range of the bank 1314 is increased.That is, it can be seen that when the multi-tone mask 1390 is used, the second non-emission area NEA 2 is further increased and an inclination angle of the bank 1314 is decreased.Although not illustrated in the drawings, when the multi-tone mask is used, the bank 1314, a spacer 1360, and the protrusion may be similar to each other in an inclination angle.Each of the spacer 1360 and the protrusion may have a dome shape instead of a trapezoidal shape illustrated in the drawings, but to form a structure, the trapezoidal shape is easier to form.According to the present disclosure, the protrusion formed as described above may be applied to a subpixel having a pentil structure or a real structure. This will be described in detail with reference to the following drawings.FIG. 24 is a plan view of a display device according to an exemplary embodiment of the present disclosure.FIG. 25 is a plan view of a display device according to another exemplary embodiment of the present disclosure.FIG. 26 is a plan view of a display device according to another exemplary embodiment of the present disclosure.FIG. 27 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIG. 28 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIG. 29 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIG. 30 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIGS. 24 to 30 illustrate a diamond pentil pixel array structure in which a first subpixel SP 1, a second subpixel SP 2, and a third subpixel SP 3 are arrayed in a diamond shape. The diamond pentil pixel array structure is known to have excellent perceived image quality. However, the present disclosure is not limited to a pixel structure.Referring to FIGS. 24 to 30, subpixels SP may include a first subpixel SP 1, a second subpixel SP 2, and a third subpixel SP 3.A plurality of first subpixels SP 1 and a plurality of third subpixels SP 3 may be arranged alternately in the same column or in the same row. For example, the first subpixels SP 1 and the third subpixels SP 3 may be alternately arranged in the same column, and the first subpixels SP 1 and the third subpixels SP 3 may be alternately arranged in the same row.A plurality of second subpixels SP 2 may be arranged in columns and different rows different from the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3. For example, the plurality of second subpixels SP 2 may be arranged in one row, and the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3 may be arranged in another row alternately adjacent to the one row. The plurality of second subpixels SP 2 may be arranged in one column, and the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3 may be arranged alternately in another column adjacent to the one column. Alternatively, the plurality of first subpixels SP 1 may diagonally oppose the plurality of second subpixels SP 2, and the plurality of third subpixels SP 3 may also diagonally oppose the plurality of second subpixels SP 2. Therefore, the plurality of subpixels SP may be arranged in a grid structure.FIGS. 24 to 30 illustrate that the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3 are arranged in the same column and in the same row, and the plurality of second subpixels SP 2 are arranged in a different column and row from the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3. However, the matrix of the plurality of subpixels SP is not limited thereto.Here, the plurality of second subpixels SP 2 are different from each other in a form, but are not limited thereto.Referring to FIGS. 24 to 29, the protrusion 340 may be disposed to surround the first electrode 231 of each subpixel SP. The protrusion 340 may be disposed at the edges of the first electrode 231 along the shape of the opening OP of each subpixel SP, but is not limited thereto.Also, as illustrated in FIGS. 7A to 7C, at least a part of the protrusion 340 of the present disclosure may be disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2. That is, at least a part of the protrusion 340 is disposed in the first non-emission region NEA 1 such that second electrodes may be connected to each other between adjacent subpixels SP.FIGS. 24 to 29 (and 30 ) illustrate an example in which the part of the protrusion 340 disposed in the first non-emission region NEA 1 extends further outward than the other part and forms a connection part CP. However, the present disclosure is not limited thereto.The protrusion 340 may be disposed to partially overlap the first electrode 231 under the protrusion 340, but is not limited thereto.The protrusion 340 of the present disclosure may have a substantially trapezoidal shape in a cross-sectional view, but is not limited thereto. In this case, angles at the ends of the lower base of the protrusion 340 may be acute or obtuse in a predetermined range. The protrusion 340 of the present disclosure may have various shapes in a cross-sectional view, such as a polygonal shape, for example, a triangular or rectangular shape, or a bell shape.The protrusion 340 of the present disclosure may act to suppress lateral leakage current occurring in a multi-stack structure. That is, the protrusion 340 of the present disclosure may partially separate an organic layer and a cathode between adjacent subpixels SP from each other.The protrusion 340 of the present disclosure may be formed of an organic material or an inorganic material.The protrusion 340 of the present disclosure may be formed of a material different from the dam 114, but is not limited thereto. The protrusion 340 of the present disclosure may be formed of the same material as the bank 114, and in this case, the protrusion 340 and the bank 114 may be formed in the same process.The protrusion 340 may be patterned together with the bank 114.FIGS. 24 to 26 illustrate various shapes of the protrusion 340, and FIG. 24 illustrates an example in which the connection part CP is disposed in the same position in each of the subpixels SP. That is, the connection part CP of the protrusion 340 may be disposed at a left upper corner of each subpixel SP, for example. The connection part CP of the protrusion 340 may be disposed between the first subpixel SP 1 and the second subpixel SP 2 and between the second subpixel SP 2 and the third subpixel SP 3.FIGS. 25 and 26 illustrate an example in which the connection part CP of the protrusion 340 of the first subpixel SP 1 is disposed at a position different from that of the second subpixel SP 2 and the third subpixel SP 3.FIGS. 27 and 28 illustrate substantially the same configuration as that in the exemplary embodiment of FIG. 24, except that dummy structures 1440, 1440 a, and 1440 bare formed between the subpixels SP.FIGS. 27 and 28 illustrate an example in which each of the dummy structures 1440, 1440 a, and 1440 bis formed as a diagonal line between the subpixels SP, but are not limited thereto.Each of the dummy structures 1440, 1440 a, and 1440 bmay operate to increase the length of a current path between adjacent subpixels SP.FIG. 28 illustrates an example in which dummy structures include a first dummy structure 1440 aand a second dummy structure 1440 b, but the number of dummy structures is not limited.The dummy structures 1440, 1440 a, and 1440 bmay be formed of the same material as the protrusion 340, but are not limited thereto.FIG. 29 illustrates an example in which the protrusion 340 and the dummy pattern 1440 are formed of metals, and in this case, the protrusion 340 and the dummy pattern 1440 may be connected to each other by a connection pattern 1445.An initial signal or a ground signal may be applied to the dummy pattern 1440. The dummy pattern 1440 may function to discharge a voltage during an initial period.FIG. 30 illustrates substantially the same configuration as that in the exemplary embodiment of FIG. 24, except that a protrusion 1540 aand a protrusion 1540 bare formed twice. The present disclosure is not limited to the number of protrusions 1540 aand 1540 b.FIG. 31 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIG. 32 is a plan view of a display device according to still another exemplary embodiment of the present disclosure.FIGS. 31 and 32 illustrate subpixels each having a real structure.Referring to FIGS. 31 and 32, subpixels SP may include a first subpixel SP 1, a second subpixel SP 2, and a third subpixel SP 3.A plurality of a first subpixel SP 1 and a plurality of third subpixels SP 3 may be alternately arranged in the same column or in the same row. For example, the first sub-pixels SP 1 and the third sub-pixels SP 3 may be alternately arranged in the same column.A plurality of second subpixels SP 2 may be arranged in a column or different row different from the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3. For example, the plurality of second subpixels SP 2 may be arranged in one row, and the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3 may be arranged alternately in another row adjacent to the one row.FIGS. 31 and 32 illustrate an example in which the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3 are arranged in the same column, and the plurality of second subpixels SP 2 are arranged in a different row from the plurality of first subpixels SP 1 and the plurality of third subpixels SP 3. However, a matrix of the plurality of subpixels SP is not limited thereto.Here, the plurality of subpixels SP are different from each other in one form, but are not limited thereto.Referring to FIGS. 31 and 32, each of the protrusions 1640 and 1740 may be disposed to surround the first electrode 231 of each subpixel SP. Each of the protrusions 1640 and 1740 may be disposed at the edges of the first electrode along the shape of the opening OP of each subpixel SP, but is not limited thereto.Also, as illustrated in FIGS. 7A to 7C, at least a part of the protrusion 1640 of the present disclosure may be disposed in the first non-emission region NEA 1 rather than the second non-emission region NEA 2. That is, at least a part of the protrusion 1640 is disposed in the first non-emission region NEA 1 such that second electrodes may be connected between adjacent subpixels PS.However, the present disclosure is not limited thereto. Referring to FIG. 32, at least a part of the protrusion 1740 of the present disclosure may not be disposed in the first non-emission region NEA 1.Exemplary embodiments of the present disclosure may also be described as follows:According to an aspect of the present disclosure, a display device is provided. The display device includes a substrate having an emission region and a non-emission region, and in which a plurality of subpixels are defined; first electrodes disposed in the plurality of subpixels in an associated manner; a bank disposed in the non-emission region between the plurality of subpixels and exposing the first electrode through an opening; a protrusion partially disposed in a second non-emission region of the non-emission region divided into a first non-emission region at a flat top surface of the bank and the second non-emission region at an inclined top surface of the bank; an organic layer disposed on the plurality of first electrodes; and a second electrode disposed on the organic layer. The organic layer includes a first organic layer disposed at the opening; and a second organic layer disposed from the first non-emission region of the bank to an upper portion of the protrusion, and an end of the second organic layer is disposed at a side surface of the protrusion at a distance from the first organic layer.The organic layer may include an emission layer disposed in each of the plurality of sub-pixels and a common layer disposed in common in the plurality of sub-pixels, and the common layer and the second electrode may be separated from each other between adjacent sub-pixels at the protrusion.The protrusion may be disposed at at least a part of edges of the first electrode along a shape of the opening of the subpixel, and the protrusion may not be disposed in another part of the edges of the first electrode.The protrusion may be disposed along edges of the opening, and at least one part may be disposed in the first non-emission region, and the other part may be disposed in the second non-emission region, and the other part disposed in the second non-emission region may be longer in length than the at least one part of the protrusion disposed in the first non-emission region.The protrusion may be interrupted at a part of edges of the first electrode and divided into a plurality of parts.The protrusion may be disposed to partially overlap the first electrode.The protrusion may be formed of a material different from the dam.The protrusion may be formed of the same material as the dam and may constitute a part of the dam.The display device may further include a spacer disposed above the bank in the first non-emission region.The protrusion may be formed of the same material as the spacer.The protrusion may have a polygonal shape (for example, a rectangular shape or a trapezoidal shape), a dome shape, or a bell shape in a cross-sectional view.When the protrusion may have the trapezoidal shape in a cross-sectional view, angles at ends of a lower base of the protrusion may have an acute angle greater than 90°- α, and α may refer to an angle between the substrate and a tangent of an upper surface of the bank on which the protrusion is disposed.When the protrusion may have the trapezoidal shape in a cross-sectional view, angles at ends of a lower base of the protrusion may have an obtuse angle smaller than 120°.Two or more protrusions may be disposed at least at a part of edges of the first electrode along a shape of the opening of the subpixel.The plurality of subpixels may include a first subpixel, a second subpixel, and a third subpixel, and a plurality of first subpixels and a plurality of third subpixels may be alternately arranged in the same column or the same row, and a plurality of second subpixels may be arranged in a different column or different row from the plurality of first subpixels and the plurality of third subpixels.A part of the protrusion disposed in the first non-emission region may extend further outward than a remaining part of the protrusion and may form a connection part, and the organic layer and the second electrode may be separated from each other between adjacent sub-pixels at the connection part.The display device may further include a dummy pattern disposed as a diagonal line between the subpixels, wherein the dummy pattern may be formed of the same material on the same layer as the protrusion.The protrusion and the dummy structure may be formed of metals, and the protrusion and the dummy structure may be connected to each other by a connection structure.According to another aspect of the present disclosure, a display device is provided. The display device includes first electrodes disposed in association in a plurality of sub-pixels; a bank disposed to cover a part of edges of the first electrode and having a first region on a flat upper surface and a second region on an inclined upper surface; a protrusion disposed on the bank; an organic layer disposed on the first electrodes; and a second electrode disposed on the organic layer, wherein the protrusion may be disposed in the second region, and the organic layer and the second electrode may be separated from each other at a side surface of the protrusion between adjacent sub-pixels.Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in various forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments are provided for illustrative purposes only.

Claims

A display device (100) comprising: a substrate (110) having an emission area (EA) and a non-emission area (NEA), and in which a plurality of subpixels (SP) are defined; a plurality of first electrodes (131, 231) arranged in an associated manner in the plurality of subpixels (SP); a bank (114, 714, 914, 1014, 1114, 1214, 1314) arranged in the non-emission area (NEA) between the plurality of subpixels (SP) and exposing the first electrode (131, 231) of each subpixel (SP) through an opening (OP) of the subpixel (SP); a protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) at least partially disposed in a second non-emission region (NEA2) of the non-emission region (NEA) divided into a first non-emission region (NEA1) on a flat top surface of the bank (114, 714, 914, 1014, 1114, 1214, 1314) and the second non-emission region (NEA2) on an inclined top surface of the bank (114, 714, 914, 1014, 1114, 1214, 1314); an organic layer (132, 232) disposed on the plurality of first electrodes (131, 231); and a second electrode (133, 233) disposed on the organic layer (132, 232), the organic layer (132, 232) comprising: a first organic layer disposed at the opening (OP); and a second organic layer disposed from the first non-emission region (NEA 1) of the bank (114, 714, 914, 1014, 1114, 1214, 1314) to an upper portion of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740), and an end of the second organic layer is disposed on a side surface of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) at a distance from the first organic layer.The display device (100) of claim 1, wherein the organic layer (132, 232) includes an emission layer disposed in each of the plurality of subpixels (SP) and a common layer disposed in common in the plurality of subpixels (SP), and the common layer and the second electrode (133, 233) are separated from each other between adjacent subpixels (SP) at the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740).The display device (100) according to claim 1 or 2, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is disposed at at least a part of edges of the first electrode (131, 231) along a shape of the opening (OP) of the subpixel (SP), and the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is not disposed in another part of the edges of the first electrode (131, 231).The display device (100) according to any one of claims 1 to 3, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is disposed along edges of the opening (OP), and at least one part is disposed in the first non-emission region (NEA1), and the other part is disposed in the second non-emission region (NEA2), and the other part disposed in the second non-emission region (NEA2) is longer in length than the at least one part of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) disposed in the first non-emission region (NEA1).The display device (100) according to claim 3, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is interrupted at a part of edges of the first electrode (131, 231) and divided into a plurality of parts.The display device (100) according to any one of claims 1 to 5, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is disposed to partially overlap the first electrode (131, 231).The display device (100) according to any one of claims 1 to 6, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is formed of a material different from the bank (114, 714, 914, 1014, 1114, 1214, 1314).The display device (100) according to any one of claims 1 to 6, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) is formed of the same material as the bank (114, 714, 914, 1014, 1114, 1214, 1314) and constitutes a part of the bank (114, 714, 914, 1014, 1114, 1214, 1314).The display device (100) according to any one of claims 1 to 8, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) has a trapezoidal shape in a cross-sectional view, angles at ends of a lower base of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) have an acute angle larger than 90°- α, and α refers to an angle between the substrate (110) and a tangent of an upper surface of the bank (114, 714, 914, 1014, 1114, 1214, 1314) on which the protrusion (140, 240a, 240b, 340, 640, 1640, 714 a, 840 a, 840 b, 940, 1040, 1140, 1240, 1540 a, 1540 b, 1640, 1740).The display device (100) according to any one of claims 1 to 8, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) has a trapezoidal shape in a cross-sectional view, and angles at ends of a lower base of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) have an obtuse angle smaller than 120°.The display device (100) according to any one of claims 1 to 10, wherein the plurality of subpixels (SP) include a first subpixel (SP1), a second subpixel (SP2), and a third subpixel (SP3), a plurality of first subpixels (SP1) and a plurality of third subpixels (SP3) are alternately arranged in the same column or the same row, and a plurality of second subpixels (SP2) are arranged in a column or different row different from the plurality of first subpixels (SP1) and the plurality of third subpixels (SP3).The display device (100) according to claim 11, wherein a part of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) disposed in the first non-emission region (NEA1) extends further outward than a remaining part of the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) and forms a connection part (CP), and the organic layer (132, 232) and the second electrode (133, 233) are separated from each other between adjacent sub-pixels (SP) at the connection part (CP).The display device (100) according to claim 11 or 12, further comprising: a dummy pattern (1440, 1440a, 1440b) arranged as a diagonal line between the subpixels (SP), wherein the dummy pattern (1440, 1440a, 1440b) is formed of the same material on the same layer as the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740).The display device (100) according to claim 13, wherein the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) and the dummy structure (1440, 1440a, 1440b) are formed of metals, and the protrusion (140, 240a, 240b, 340, 640, 714a, 840a, 840b, 940, 1040, 1140, 1240, 1540a, 1540b, 1640, 1740) and the dummy structure (1440, 1440a, 1440b) are connected to each other by a connection structure (1445).

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