Method for producing a welded connection between a silicon chip and a plastic support component

Abstract

Method for producing a welded joint 20 in a chip laboratory cartridge (40), preferably for single use, in particular for a modular medical analysis system, between a Si-chip (1) which has microcavities (13) in which active substances (14) for an analysis reaction are contained and a thermoplastic plastic carrier component (2), preferably made of polycarbonate, comprising the process steps: positioning the Si-chip (1) containing the active substances in a recess (5) of the thermoplastic plastic carrier component (2) in which the Si-chip (1) rests at least partially on the thermoplastic plastic carrier component (2), applying a hold-down force (N) to the Si-chip (1) by means of a hold-down device, producing the welded joint (20).

Description

Technical field

[0001] The invention relates to a method for connecting a silicon chip (Si-chips) with a plastic carrier component, preferably a carrier made of polycarbonate, by means of a welding connection, particularly for use in a chip laboratory cartridge, preferably for single use, for a modular medical analysis system. State of the art

[0002] Known chip laboratory cartridges have a multi-layered structure, with the different layers consisting of various materials. Due to their good processability and cost-effectiveness, these are usually plastic components. Silicon chips are often used to carry out the biotechnological reactions because they exhibit particularly good thermal conductivity. These can also be silicon carbide chips, which is why the present invention is intended to encompass both. For carrying out the biotechnological reactions, the silicon chips have microcavities containing test-relevant active ingredients.For the purposes of this document, the term "Si-Chip" refers both to components made of silicon material that include and / or form electronic components, and to those that consist solely of a mechanical structure made of silicon material, such as silicon wafers or substrate components. According to the prior art, the Si-Chip is inserted into a recess in a plastic carrier component of the chip laboratory cartridge.

[0003] This component can be made of polycarbonate; preferably, the silicon chip is inserted into a pneumatic layer of the chip laboratory cartridge. In a further step, a light-curing adhesive is applied around the silicon chip and then irradiated with a UV light lamp to cure it. The adhesive creates the mechanical bond and seals the connection point fluid-tight. The adhesive used must meet high requirements regarding thermal resistance, resistance to the media contained in the chip laboratory cartridge, mechanical resistance at high temperatures and rapid temperature changes, and it must also be biochemically compatible and approved. Rapid curing is necessary and advantageous for processing. These high requirements and the application method result in several disadvantages.

[0004] Against this background, the object of the invention is to propose a method and a chip laboratory cartridge which overcome the aforementioned disadvantages of the prior art, whereby active ingredients encompassed by the Si-chip must be protected from harmful effects of the method. Disclosure of the invention

[0005] The inventive method for producing a welded joint in a chip laboratory cartridge with the features of claim 1, the laser welding device with the features of claim 11, and the chip laboratory cartridge with the features of claim 12 have the advantage that the method for producing the welded joint is greatly simplified compared to the complex dispensing and curing of an adhesive, resulting in a significantly reduced cycle time in production. This allows for an increase in production volume and a reduction in the cost per manufactured product. Furthermore, the use of the costly adhesive can be eliminated, which directly saves costs and indirectly leads to a better environmental footprint for the product.With regard to the chip laboratory cartridge, an adhesive-free connection is advantageous due to the demanding requirements of medical device and medical technology manufacturing. The invention's adherence to a maximum temperature in the microcavities of the silicon chip advantageously allows the microcavities to be already filled with the active ingredients during the welding process. This allows the prior art process to be used advantageously, so that pre-filled silicon chips can continue to be fed into the joining process. No changes to the associated logistics and supply chains are necessary.

[0006] The method for producing a welded connection in a chip laboratory cartridge, which is preferably intended for single use, in particular for a modular medical analysis system, between a silicon chip containing microcavities in which active substances for an analysis reaction are contained and a thermoplastic polymer support component, preferably made of polycarbonate, comprises the process steps: positioning the silicon chip containing the active substances in a recess of the thermoplastic polymer support component in which the silicon chip rests at least partially on the thermoplastic polymer support component, applying a hold-down force to the silicon chip by means of a hold-down device, producing the welded connection.

[0007] According to the invention, it is provided that the welded joint is produced by means of laser welding and that the production of the welded joint is regulated and / or carried out in such a way that during the production of the welded joint the temperature of the active ingredients in the microcavities is kept below a predetermined maximum temperature of the active ingredients.

[0008] Advantageous further developments of the method according to the invention are listed in the dependent claims.

[0009] In a first preferred embodiment of the method for producing a weld joint, a laser source with a controlled laser beam, preferably a laser source with a laser beam controlled by a laser scanner or by means of a movable fixed optic, can be used to produce the weld joint. This laser beam scans an area to be irradiated for producing the weld joint along a contour of the silicon chip, advantageously with high precision. The method can be easily adapted to changes in the geometry of the weld joint by adjusting the control of the laser beam. Within the system boundaries of the controlled laser beam, only a change in the control system, i.e., a software change, is necessary for modification; no hardware changes are required.

[0010] In an alternative embodiment of the method for producing a weld joint, a laser source with a laser beam having a fixed beam profile can be used to produce the weld joint. This laser beam irradiates the entire area along the contour of the silicon chip simultaneously. Advantageously, this allows for particularly fast weld joint production, which reduces the cycle time of the joining process. Furthermore, this method allows for particularly precise welding, as no moving components influence the direction of the laser beam.

[0011] In a further preferred embodiment of the method for producing a welded joint, an insert made of a thermoplastic material, preferably a semi-crystalline thermoplastic material, can be arranged on the end faces of the silicon chip around the silicon chip in the recess, wherein the welded joint is produced by melting the insert as a filler metal. For the purposes of the present invention, the insert can be understood as part of the silicon chip. By using the insert, it is advantageously possible to adopt the shape of the silicon chip and the shape of the recess unchanged from the prior art. According to the prior art, a gap is necessary around the silicon chip for the application of the adhesive, which is why the recess of the thermoplastic carrier component has an excess size relative to the silicon chip.Advantageously, an insert adapted to this excess can be used, eliminating the need for changes to upstream processes or the components themselves. Furthermore, the use of the insert allows for the creation of a weld joint with defined properties, achieved through a targeted selection of the insert material.

[0012] In an alternative embodiment of the method for producing a welded joint compared to the embodiment described above, the recess and the silicon chip can be contacted such that the recess and the silicon chip are in contact with each other on an outer end face of the silicon chip before the weld is produced. The weld is produced by melting thermoplastic material in a contact zone of the thermoplastic carrier component. Advantageously, this minimizes the number of necessary process steps. A process step for adding a welding filler, in particular for placing an insert, can be omitted.

[0013] In a further preferred embodiment of the method for producing a welded joint, a laser beam from a laser source can be directed towards a bottom surface of the chip laboratory cartridge. The wavelength of the laser source is selected such that the laser beam penetrates the thermoplastic carrier component and is absorbed in an effective zone by the silicon chip, which is located behind the carrier component in one direction of the laser beam. This heats the silicon chip, transferring heat to the thermoplastic material adjacent to the effective zone, which is to be melted to produce the welded joint. This melts the material and thus creates the welded joint. Depending on the embodiment of the method, at least part of the insert and / or a portion of the thermoplastic carrier component is melted.Preferably, the laser beam penetrates the thermoplastic substrate to more than 80%, thus advantageously achieving minimal heating of the substrate and reducing energy loss during transmission. More preferably, the silicon chip absorbs more than 80% of the laser beam, thus advantageously achieving efficient heating of the silicon chip. The wavelength of the laser beam or laser source is preferably 400–500 nm, particularly preferably 450 nm. By irradiating the thermoplastic substrate, a zone directly in thermally conductive contact with the thermoplastic material to be melted for welding is irradiated and heated. The heat generated by the laser source is thus advantageously produced directly in the weld area.This approach allows for a particularly targeted application of heat, and furthermore, it reduces the heating of adjacent areas.

[0014] In an alternative embodiment of the method for producing a weld joint, a laser beam from a laser source can be directed towards the top side of the chip laboratory cartridge. The wavelength of the laser source is selected such that the laser beam is absorbed by the thermoplastic material to be melted to produce the weld joint, the insert component, and / or the thermoplastic carrier component. This heats and melts the material, thus producing the weld joint. Depending on the embodiment of the method, at least part of the insert component and / or a portion of the thermoplastic carrier component is melted. Preferably, the wavelength of the laser beam or the laser source is 1,650–1,750 nm or more than 2,200 nm.Advantageously, the plastic material to be melted for the weld joint can be directly irradiated and heated, reducing heat loss to other components that are not melted. This also means that less heat is required to create the weld joint, thus reducing the risk of overheating components or parts of components.

[0015] In a further preferred embodiment of the method for producing a weld joint, active cooling of the active ingredients in the microcavities and / or the silicon chip in the microcavity region can be provided during the weld joint production, preferably by means of a gas stream. This allows the temperature of the active ingredients in the microcavities to be kept below a predetermined maximum temperature during the weld joint production. Advantageously, this ensures that the components to be welded are heated sufficiently far and for a sufficient duration to produce a high-quality weld joint without overheating the temperature-sensitive active ingredients. Such a gas stream, for example, can be easily generated as an airflow and can be advantageously directed precisely onto the silicon chip. For example, the airflow can be generated with a controllable blower.A more effective cooling effect can be achieved by applying a liquefied gas. Such a gas absorbs the heat required for evaporation from its surroundings, thereby cooling them. These agents are commonly used in various applications, for example, as cooling sprays. It is possible to selectively dissipate a large amount of heat from the silicon chip without leaving any residue of the cooling medium.

[0016] In a further preferred embodiment of the method for producing a welded joint, a thermal insulation section can be produced prior to the welding process. This thermal insulation section is created between a heat-affected zone and the microcavities in the silicon chip, particularly by a change in shape and / or material and / or microstructure of the silicon chip. This thermal insulation section reduces the thermal conductivity in the silicon chip from the heat-affected zone to the microcavities, preventing the active ingredients in the microcavities from overheating beyond their predetermined maximum temperature during the welding process. Advantageously, this can prevent overheating of the active ingredients in the microcavities of the silicon chip, either as an alternative or in addition to active cooling.A change in the shape of the silicon chip can, for example, involve increasing the distance and / or reducing the thermally conductive cross-section of the silicon chip between the heat-affected zone and the microcavities. By changing the material and / or the microstructure in the thermal insulation section of the silicon chip, the thermal conductivity of this section can be reduced.

[0017] In a further preferred embodiment of the method for producing a weld joint, the silicon chip can be structured prior to the welding process. This involves introducing a structure into the surface of the silicon chip at a joining point, particularly by means of an ultrashort pulse laser. During the welding process, molten plastic is forced into this structure, thereby increasing the holding forces of the weld joint, especially the transmissible shear forces. The structure can comprise a grooved structure and / or point-like depressions and / or increased roughness. The joining point is the area of ​​the silicon chip where the weld joint attaches to the silicon chip. Advantageously, this method produces a particularly strong and durable weld joint.Resistance to changing loads can also be advantageously improved.

[0018] In a further preferred embodiment of the method for producing a weld joint, the hold-down device for applying a holding force to the silicon chip can be irradiated by the laser beam during the welding process. Advantageously, the holding force can thus be applied at the same point that is irradiated by the laser beam to produce the weld joint. This allows for the advantageous production of a particularly strong weld joint. The hold-down device can, for example, comprise a glass plate.

[0019] Furthermore, the invention also includes a laser welding device for welding components of a chip laboratory cartridge. This device has a receiving unit for a thermoplastic carrier component of the chip laboratory cartridge, wherein a silicon chip is arranged in a recess in the thermoplastic carrier component, and has a hold-down device for generating a holding force on the silicon chip in the recess and a laser source.

[0020] According to the invention, the laser welding device includes a cooling applicator by means of which a gas stream can be applied to the silicon chip for cooling. This gas stream is designed to dissipate heat from the silicon chip during the welding process.

[0021] Furthermore, the invention also includes a chip laboratory cartridge, preferably for single use, in particular for a modular medical analysis system, comprising a Si-chip which has microcavities in which active substances for an analysis reaction are contained and a thermoplastic plastic carrier component, preferably made of polycarbonate, which has a recess in which the Si-chip is arranged.

[0022] According to the invention, the silicon chip and the plastic carrier component are connected by means of a welded joint, wherein a thermal insulation section with reduced thermal conductivity is formed in the silicon chip between a heat-affected zone and the microcavities, in particular by means of a change in shape and / or material and / or microstructure of the silicon chip. This thermal insulation section limits the heating of the active ingredients in the microcavities during the production of the welded joint, so that a predetermined maximum temperature of the active ingredients in the microcavities of the silicon chip is not exceeded during this process.

[0023] To avoid unnecessary repetition, reference is made to the preceding explanations regarding the process for manufacturing the chip laboratory cartridge with respect to the advantages of the chip laboratory cartridge according to the invention.

[0024] Features disclosed by process shall be considered as disclosed by device as well and shall be claimable, and vice versa.

[0025] Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments of the invention and from the drawings. Brief description of the drawings Fig. Figures 1a and 1b show a schematic representation of a section of a plastic support component when carrying out the method according to the invention in a first embodiment. Fig. Figures 2a and 2b show a schematic representation of a section of a plastic support component when carrying out the method according to the invention in a second embodiment. Fig. Figure 3 shows a schematic representation of a section of a plastic support component when carrying out the method according to the invention in a third embodiment, Fig. Figures 4a / b / c show a schematic representation of measures to limit the temperature of the active ingredients in microcavities on the Si-chip. Fig. Figure 5 shows a schematic representation of a laser welding device, Fig. Figure 6 shows a schematic representation of a chip lab cartridge. Embodiments of the invention

[0026] Identical elements or elements with the same function are provided with the same reference numbers in the figures.

[0027] The Fig. 1a and Fig. Figure 1b shows two process steps of a method according to the invention in a first embodiment. A section of a polycarbonate plastic carrier component 2 with a silicon chip 1 is shown. A recess 5 is formed on a top surface O of the thermoplastic plastic carrier component 2, into which the silicon chip 1 was inserted in a preceding process step. The silicon chip 1 lies flush with the recess 5 along its end faces 3, so that the silicon chip 1 is in contact with the plastic carrier component 2 all around. Fig. Figure 1b shows the subsequent process step of irradiation with a laser beam. For this, a clamping force N is applied to the Si chip 1 using a clamping device (not shown). This ensures a defined and consistent positioning of the Si chip 1 relative to the plastic carrier component 2. A laser source 6 generates a laser beam 7, which strikes the polycarbonate material of the thermoplastic carrier component 2 in a contact zone 8, is absorbed by the material, and thus heats it. The wavelength of the laser beam 7 is chosen to be 1,700 nm so that the polycarbonate material absorbs the laser beam 7 as effectively as possible and is heated by it as efficiently as possible. The clamping device applies the clamping force N by means of a glass plate through which the laser beam 7 passes.The plastic is melted and, after the laser source 6 is switched off, the plastic solidifies, so that the weld 20 between the Si chip 1 and the plastic carrier component 2 is created. In the example of the . Fig. Figure 1b shows a laser source 6 with a controlled laser beam 7, represented here as a laser scanner 30. The laser beam 7 is guided by this laser scanner 30 in such a way that it traces the contour of the weld joint 20.

[0028] The Fig. 2a and Fig. Figure 2b shows two process steps of a process according to the invention in a further embodiment. In contrast to the illustration in the Fig. 1a and Fig. 1b is at the Fig. 2a and Fig. 2b in the recess 5 between the Si-chip 1 and the plastic carrier component 2, an insert 9 is arranged. The insert 9 consists of a thermoplastic material. Fig. Figure 2b shows the irradiation of the insert 9 with a laser beam 7 from a laser source 6, which shines from the direction of a top surface O onto the arrangement consisting of Si chip 1, plastic carrier component 2 and insert 9. This differs from the representation of the Fig. In this embodiment, the laser source 6 generates a laser beam 7 with a fixed beam profile, such that the entire area to be irradiated is simultaneously illuminated by the laser beam 7. The laser beam 7 irradiates and heats the insert 9, melting it. After the laser source 6 is switched off, the molten material of the insert 9 solidifies, and the weld 20 between the Si chip 1 and the plastic carrier component 2 is created using the insert 9 as a filler material.

[0029] The Fig. Figure 3 shows a schematic representation of a section of a plastic carrier component 2 when the inventive method is carried out in a further embodiment. The Si-chip 1 is positioned analogously to the representation of the Fig. Si chip 1 is contacted in the recess 5 on the plastic carrier component 2, with the plastic carrier component 2 overlapping the Si chip 1 in an effective zone 10 from the direction of a bottom surface U. A holding force N is applied from the direction of a top surface O by means of a hold-down device (not shown), which ensures a defined positioning of the Si chip 1 relative to the plastic carrier component 2. A laser source 6 generates a laser beam 7, which shines through the plastic carrier component 2 from the direction of a bottom surface U and strikes the Si chip 1 in the effective zone 10, which is located behind the plastic carrier component 2 in the direction L of the laser beam 7.The wavelength of the laser beam 7 is chosen to be 445 nm such that the laser beam 7 passes through the polycarbonate material of the thermoplastic carrier component 2 with minimal energy loss and strikes the silicon chip 1, which absorbs the laser beam 7. The energy of the laser beam 7 is then transferred to the silicon chip 1 in the effective zone 10. This heats the effective zone 10 of the silicon chip 1. This heating also heats and melts the material of the thermoplastic carrier component 2 adjacent to the effective zone 10. In the area of ​​the joint 21, the silicon chip 1 has a surface structure 22. The molten material is forced into this structure 22, which increases the mechanical strength of the weld 20. After switching off the laser source 6, the Si chip 1 and the plastic support component 2 cool down, the molten material solidifies, and the weld 20 is formed.

[0030] The Fig. Figure 4a shows an embodiment of the method according to the invention in which additional active cooling is carried out. A section of a connection point between the silicon chip 1 and the plastic carrier component 2 is shown. The silicon chip 1 has microcavities 13 containing active ingredients 14. These active ingredients 14 are heat-sensitive. Heat is conducted from the heat-affected zone 11, which is located in the area of ​​the weld joint 20 between the silicon chip 1 and the plastic carrier component 2, through the material of the silicon chip 1 to the microcavities 13. It is undesirable for the active ingredients 14 to overheat during the welding process. To selectively cool the active ingredients 14 in the microcavities 13, a gas stream 16 is directed onto the active ingredients 14 by means of a cooling applicator 15. The gas stream 16 is a liquefied gas, such as that used in so-called cooling sprays.This liquefied gas now evaporates in the microcavities 13 and extracts the necessary heat from the Si-Chip 1 and the active ingredients 14, so that the temperature of the active ingredients 14 in the microcavities 13 is increased less than without this active cooling.

[0031] The Fig. 4b and Fig. Figure 4c shows embodiments that can be implemented alternatively or complementarily. The thermal conductivity in the Si-chip 1 from the heat-affected zone 11 to the microcavities 13 containing the active substances 14 is reduced by means of design measures. It is possible to combine active cooling measures and design measures to reduce thermal conductivity.

[0032] The Fig. Figure 4b shows an increased distance between the heat exposure zone 11 and the microcavities 13 containing the active substances 14. A longer distance over which heat must be transferred reduces the amount of heat that can act in the microcavities 13; the increased distance between the heat exposure zone 11 and the microcavities 13 acts as a thermal insulation section 17.

[0033] The Fig. Figure 4c shows an example of a further constructive measure for reducing the thermal conductivity between the heat-affected zone 11 and the microcavities 13. In addition to the execution according to the Fig. 4b A groove 18 is formed between the heat-affected zone 11 and the microcavities 13. This groove 18, as part of the thermal insulation section 17, reduces the thermally conductive cross-section of the Si chip 1 and further increases the heat conduction path between the heat-affected zone 11 and the microcavities 13. It is also possible to form several grooves 18, for example in a meandering pattern.

[0034] The Fig. Figure 5 shows a schematic representation of a laser welding device 50. A plastic carrier component 2 of a chip laboratory cartridge is arranged in the holding device 51. A silicon chip 1 is arranged in a recess 5 in the plastic carrier component 2. The silicon chip 1 has a microcavity 13 in which active ingredients 14 are contained. A holding force N is applied to the silicon chip 1 by means of the hold-down device 52. The holding force N secures the positioning of the silicon chip 1 in the recess 5 of the thermoplastic carrier component 2 and fixes the plastic carrier component 2 in the holding device 51. The laser source 6 is oriented towards the underside U of the thermoplastic carrier component 2 and generates a laser beam 7. A cooling applicator 15 generates a gas flow 16, which is directed towards the active ingredients 14 in the microcavity 13 to cool them.This gas flow 13 limits the temperature of the Si chip 1 in the area of ​​the microcavity 13 and the temperature of the active ingredients 14 to a predetermined maximum temperature of the active ingredients 14, so that they are not overheated when the weld joint 20 is produced with the laser welding device 50.

[0035] The Fig. Figure 6 shows a schematic representation of a chip laboratory cartridge 40 with a plastic carrier component 2 and a silicon chip 1. The silicon chip 1 has microcavities 13. A weld connection 20 is produced using the method according to the invention to connect the silicon chip 1 to the plastic carrier component 2.

Claims

[1] Method for producing a welded joint (20) in a chip laboratory cartridge (40), preferably for single use, in particular for a modular medical analysis system, between a Si chip (1) which has microcavities (13) in which active substances (14) for an analysis reaction are contained and a thermoplastic polymer carrier component (2), preferably made of polycarbonate, comprising the process steps: - Positioning the Si-chip (1) containing the active ingredients (14) in a recess (5) of the thermoplastic carrier component (2), in which the Si-chip (1) rests at least partially on the thermoplastic carrier component (2), - Applying a holding force (N) to the Si chip (1) using a hold-down device, -Producing the welded joint (20), characterized by, that the weld joint (20) is produced by means of laser welding and wherein the production of the weld joint (20) is regulated and / or carried out in such a way that during the production of the weld joint (20) a temperature of the active substances (14) in the microcavities (13) is kept below a predetermined maximum temperature of the active substances (14). [2] Method for producing a welded joint (20) according to claim 1, characterized by , that for the production of the welded joint (20) a laser source (6) with a controlled laser beam (7), preferably a laser source (6) with a laser beam (7) controlled by means of a laser scanner (30) or by means of a movable fixed optic, is used. [3] Method for producing a welded joint (20) according to claim 1, characterized by , that a laser source (6) with a laser beam (7) with a fixed beam profile is used to produce the weld joint (20). [4] Method for producing a welded joint (20) according to any one of claims 1 to 3, characterized by , Arranging an insert part (9) made of a thermoplastic material, preferably a semi-crystalline thermoplastic material, on end faces (3) of the Si chip (1), around the Si chip (1) in the recess (5), wherein the weld joint (20) is produced by melting the insert part (9) as a welding additive. [5] Method for producing a welded joint (20) according to any one of claims 1 to 3, characterized by, contacting the recess (5) and the Si-chip (1) such that the recess (5) and the Si-chip (1) are in contact with each other on an outer end face (3) of the Si-chip (1) before the welding connection (20) is made, wherein the welding connection (20) with the Si-chip (1) is made by melting thermoplastic material in a contact zone (8) of the thermoplastic plastic carrier component (2). [6] Method for producing a welded joint (20) according to any one of claims 1 to 5, characterized by, Aligning a laser beam (7) of a laser source (6) towards a bottom side (U) of the chip laboratory cartridge (40), wherein the wavelength of the laser source (6) is selected such that the laser beam (7) passes through the thermoplastic plastic carrier component (2) and is absorbed in an effective zone (10) by the Si chip (1) which is arranged in a direction (L) of the laser beam (7) behind the plastic carrier component (2). [7] Method for producing a welded joint (20) according to any one of claims 1 to 5, characterized by , Aligning a laser beam (7) of a laser source (6) towards a top surface (O) of the chip laboratory cartridge (40), wherein the wavelength of the laser source (6) is selected such that the laser beam (7) is absorbed by thermoplastic material of the insert part (9) and / or the thermoplastic carrier component (2) to be melted to produce the weld connection (20). [8] Method for producing a welded joint (20) according to any one of the preceding claims, characterized by an active cooling of the active substances (14) in the microcavities (13) and / or of the Si chip (1) in the area of ​​the microcavities (13) during the production of the welded joint (20), preferably by means of a gas stream (16). [9] Method for producing a welded joint (20) according to any one of the preceding claims, characterized by a production of a thermal insulation section (17) prior to the production of the welded joint (20), wherein the thermal insulation section (17) is produced between a heat-affected zone (11) and the microcavities (13) in the Si-chip (1), in particular by a change in shape and / or material and / or microstructure of the Si-chip (1). [10] Method for producing a welded joint (20) according to any one of the preceding claims, characterized by, structuring the Si chip (1) prior to the welding process (20), wherein a structure (22) is introduced into a surface of the Si chip (1) at a joining point (21), in particular by means of an ultrashort pulse laser, so that during the welding process (20) molten plastic is pressed into this structure (22), thereby increasing the holding forces of the welding process (20), in particular the transmissible shear forces. [11] Laser welding device (50) for welding components of a chip laboratory cartridge (40), comprising a receiving device (51) for a thermoplastic carrier component (2) of the chip laboratory cartridge (40), wherein a Si chip (1) is arranged in a recess (5) in the thermoplastic carrier component (2), further comprising a hold-down device (52) for generating a hold-down force (N) on the Si chip (1) in the recess (5) and a laser source (6), characterized by, that the laser welding device (50) comprises a cooling applicator (15) by means of which a gas flow (16) can be applied to the Si chip (1) for cooling. [12] Chip laboratory cartridge (40) comprising a Si-chip (1) which has microcavities (13) in which active substances (14) for an analysis reaction are contained and a thermoplastic plastic carrier component (2), preferably made of polycarbonate, which has a recess (5) in which the Si-chip (1) is arranged, characterized by, that the Si-chip (1) and the plastic carrier component (2) are connected by means of a welded joint (20), wherein in the Si-chip (1) between a heat-affected zone (11) and the microcavities (13), in particular by a change in shape and / or material and / or microstructure of the Si-chip (1), a thermal insulation section (17) with reduced thermal conductivity is formed, which limits the heating of the active ingredients (14) in the microcavities (13) during the production of the welded joint (20), so that a predetermined maximum temperature of the active ingredients (14) in the microcavities (13) of the Si-chip (1) is not exceeded during this time.

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