Display substrate, display device and method for producing a display substrate

Abstract

A display substrate is provided. The display substrate comprises multiple functional material layers that extend at least partially across several subpixels. The multiple functional material layers include a first section in an inter-subpixel region and a second section in subpixel regions. The first section includes a doped impurity. The first and second sections share at least one functional material. The weight percentage of the doped impurity in the first section is higher than the weight percentage of the doped impurity in the second section. The first section separates adjacent subpixels. The second section comprises a light-emitting layer for each subpixel.

Description

AREA OF TECHNOLOGY

[0001] The present invention relates to display technology, in particular to a display substrate, a display device and a method for producing a display substrate. STATE OF THE ART

[0002] Organic light-emitting diode (OLED) displays are currently a hotspot in the field of flat panel display research. Unlike thin-film transistor liquid crystal displays (TFT-LCDs), which use a stable voltage to control brightness, OLEDs are driven by a driver current that must be kept constant to control the illumination. An OLED display panel comprises numerous pixel units configured with pixel driver circuits arranged in multiple rows and columns. Each pixel driver circuit includes a driver transistor with a gate terminal connected to a gate line for each row and a drain terminal connected to a data line for each column.When the line controlling the pixel unit is switched on, the switching transistor connected to the driver transistor is turned on, and the data voltage is applied from the data line via the switching transistor to the driver transistor, causing the driver transistor to output a current corresponding to the data voltage to an OLED device. The OLED device is then driven to emit light at the appropriate brightness. SUMMARY

[0003] In one aspect, the present disclosure provides a display substrate comprising a plurality of functional material layers extending at least partially over several subpixels; wherein the plurality of functional material layers comprise a first section in an inter-subpixel region and a second section in subpixel regions; wherein the first section comprises a doped impurity; the first section and the second section comprise at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; the first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of a respective subpixel.

[0004] Optionally, the weight ratio of the doped impurity to the at least one common functional material in the first section is higher than the weight ratio of the doped impurity to the at least one common functional material in the second section.

[0005] Optionally, the weight ratio of the doped impurity to the at least one common functional material in the second section in at least one of a hole transport layer, a hole injection layer, an electron transport layer or an electron injection layer is essentially zero.

[0006] Optionally, the display substrate further comprises an anode material layer that extends at least partially over several subpixels; the anode material layer comprises a first anode section at least partially in the subpixel regions and a second anode section at least partially in the inter-subpixel region; the first anode section comprises a doped anode impurity; the first anode section and the second anode section comprise at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; the second anode section spaced adjacent subpixels; and the first anode section comprises an anode of the respective subpixel.

[0007] Optionally, the weight ratio of the doped anode impurity to the at least one common material in the second anode section is essentially zero.

[0008] Optionally, the first anode section and the second anode section comprise at least one common semiconductor material; the first anode section has a higher conductivity than the conductivity of the second anode section; and the difference between a highest occupied molecular orbital level of the second anode section and a highest occupied molecular orbital level of a functional material layer in direct contact with the second anode section is greater than the difference between a highest occupied molecular orbital level of the first anode section and a highest occupied molecular orbital level of the functional material layer in direct contact with the first anode section.

[0009] Optionally, the first anode section and the second anode section may comprise at least one common metal oxide material.

[0010] Optionally, an orthographic projection of the second anode section on a base substrate overlaps at least partially with an orthographic projection of the first section on the base substrate; and an orthographic projection of the first anode section on the base substrate overlaps at least partially with an orthographic projection of the second section on the base substrate.

[0011] Optionally, the doped impurity or the doped anode impurity comprises at least one of boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium or silicon.

[0012] Optionally, the display substrate further comprises a pixel definition layer, wherein the pixel definition layer comprises a plurality of interpixel functional material layers doped with impurities, and the plurality of interpixel functional material layers in the pixel definition layer are unable to emit light.

[0013] Optionally, the multiple functional material layers comprise a stacked structure including a light-emitting layer, a hole-transporting layer, a hole-injection layer, an electron-transporting layer, and an electron-injection layer; and each of the light-emitting layer, hole-transporting layer, hole-injection layer, electron-transporting layer, and electron-injection layer includes a section containing the doped impurity.

[0014] Optionally, the display substrate comprises a plurality of first functional material layers extending at least partially over several subpixels of a first color, a plurality of second functional material layers extending at least partially over several subpixels of a second color, and a plurality of third functional material layers extending at least partially over several subpixels of a third color; wherein the plurality of first functional material layers comprises a first stacked structure comprising a light-emitting layer of a first color, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; wherein each of the light-emitting layer of the first color, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer comprises a section containing the doped impurity;the plurality of second functional material layers comprise a second stacked structure comprising a second-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; each of the second-color light-emitting layer, hole transport layer, hole injection layer, electron transport layer, and electron injection layer comprises a section with the doped impurity; the plurality of second functional material layers comprise a third stacked structure comprising a third-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer;and each of the third-color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer comprises a section with the doped impurity.

[0015] Optionally, the display substrate is a light-emitting display substrate; the multiple functional material layers comprise a stacked structure comprising a first light-emitting layer and a second light-emitting layer of the same color; and each of the first light-emitting layer and the second light-emitting layer comprises a section containing the doped impurity.

[0016] Optionally, the display substrate is a white light-emitting display substrate; the multiple functional material layers comprise a stacked structure comprising a first-color light-emitting layer, a second-color light-emitting layer, and a third-color light-emitting layer; and each of the first-color light-emitting layer, the second-color light-emitting layer, and the third-color light-emitting layer comprises a section containing the doped impurity.

[0017] Optionally, the display substrate further comprises a second anode material layer on a side of the anode material layer that is remote from the plurality of functional material layers; wherein the second anode material layer comprises at least one metallic material.

[0018] Optionally, the display substrate also includes an etch stop layer on a side of the second anode material layer that is remote from the anode material layer.

[0019] Optionally, the display substrate further comprises an encapsulation layer on a side of the plurality of functional material layers remote from a base substrate, encapsulating the plurality of functional material layers; and a translucent inorganic protective layer on a side of the encapsulation layer remote from the base substrate; wherein the translucent inorganic protective layer comprises a plurality of translucent inorganic protective blocks; and each translucent inorganic protective block of the plurality of translucent inorganic protective blocks is located in a respective subpixel area.

[0020] In another aspect, the present disclosure provides a display device comprising the display substrate described herein and one or more integrated circuits connected to the display substrate.

[0021] In another aspect, the present disclosure provides a method for producing a display substrate, comprising: forming a plurality of initial functional material layers extending at least partially over several subpixels, and performing a first impurity doping on the plurality of initial functional material layers to form a plurality of functional material layers comprising a first section in an inter-subpixel region and a second section in subpixel regions, wherein the first section comprises a doped impurity; the first section and the second section comprise at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section;a weight ratio of the doped impurity to the at least one common functional material in the first section is higher than a weight ratio of the doped impurity to the at least one common functional material in the second section; the first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of each subpixel.

[0022] Optionally, the method further comprises forming an initial anode material layer extending at least partially over several subpixels; and performing a second impurity doping on the initial anode material layer to form an anode material layer comprising a first anode section at least partially in the subpixel regions and a second anode section at least partially in the inter-subpixel region; wherein the first anode section comprises a doped anode impurity; the first anode section and the second anode section comprise at least one common material; and a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section.a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section is spaced apart from adjacent subpixels; and the first anode section comprises an anode of the respective subpixel.

[0023] Optionally, prior to performing the first impurity doping, the method further comprises forming an encapsulation layer on a side of the plurality of initial functional material layers remote from a base substrate, encapsulating the plurality of initial functional material layers; and forming a translucent inorganic protective layer on a side of the encapsulation layer remote from the base substrate; wherein the formation of the translucent inorganic protective layer comprises forming a plurality of translucent inorganic protective blocks; each translucent inorganic protective block of the plurality of translucent inorganic protective blocks is located in a respective subpixel region; and the first impurity doping is performed using the plurality of translucent inorganic protective blocks as a mask plate.

[0024] In another aspect, the present disclosure provides a display substrate comprising an anode material layer that extends at least partially over several subpixels; the anode material layer comprising a first anode section at least partially in subpixel regions and a second anode section at least partially in an inter-subpixel region; the first anode section comprising a doped anode impurity; the first anode section and the second anode section comprising at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; the second anode section spaced adjacent subpixels apart; and the first anode section comprising an anode of the respective subpixel.

[0025] Optionally, the weight ratio of the doped anode impurity to the at least one common material in the second anode section is essentially zero.

[0026] Optionally, the first anode section and the second anode section comprise at least one common semiconductor material; the first anode section has a higher conductivity than the conductivity of the second anode section; and the difference between a highest occupied molecular orbital level of the second anode section and a highest occupied molecular orbital level of a functional material layer in direct contact with the second anode section is greater than the difference between a highest occupied molecular orbital level of the first anode section and a highest occupied molecular orbital level of the functional material layer in direct contact with the first anode section.

[0027] Optionally, the first anode section and the second anode section may comprise at least one common metal oxide material.

[0028] Optionally, the doped impurity or the doped anode impurity comprises at least one of boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium or silicon.

[0029] Optionally, the display substrate further comprises a plurality of functional material layers extending at least partially over several subpixels; wherein the plurality of functional material layers comprise a first section in the inter-subpixel region and a second section in the subpixel regions; wherein the first section comprises a doped impurity; the first section and the second section comprise at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; the first section spaced adjacent subpixels apart; and the second section comprised a light-emitting layer of each subpixel.

[0030] Optionally, the weight ratio of the doped impurity to the at least one common functional material in the first section is higher than the weight ratio of the doped impurity to the at least one common functional material in the second section.

[0031] Optionally, the weight ratio of the doped impurity to the at least one common functional material in the second section in at least one of a hole transport layer, a hole injection layer, an electron transport layer or an electron injection layer is essentially zero.

[0032] Optionally, an orthographic projection of the second anode section on a base substrate overlaps at least partially with an orthographic projection of the first section on the base substrate; and an orthographic projection of the first anode section on the base substrate overlaps at least partially with an orthographic projection of the second section on the base substrate.

[0033] Optionally, the display substrate further comprises a pixel definition layer; wherein the pixel definition layer comprises a plurality of interpixel functional material layers doped with impurities; and the plurality of interpixel functional material layers in the pixel definition layer are unable to emit light.

[0034] Optionally, the multiple functional material layers comprise a stacked structure including a light-emitting layer, a hole-transporting layer, a hole-injection layer, an electron-transporting layer, and an electron-injection layer; and each of the light-emitting layer, hole-transporting layer, hole-injection layer, electron-transporting layer, and electron-injection layer includes a section containing the doped impurity.

[0035] Optionally, the display substrate comprises a plurality of first functional material layers extending at least partially over several subpixels of a first color, a plurality of second functional material layers extending at least partially over several subpixels of a second color, and a plurality of third functional material layers extending at least partially over several subpixels of a third color; wherein the plurality of first functional material layers comprises a first stacked structure comprising a light-emitting layer of a first color, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; wherein each of the light-emitting layer of the first color, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer comprises a section containing the doped impurity;the plurality of second functional material layers comprise a second stacked structure comprising a second-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; each of the second-color light-emitting layer, hole transport layer, hole injection layer, electron transport layer, and electron injection layer comprises a section with the doped impurity; the plurality of second functional material layers comprise a third stacked structure comprising a third-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer;and each of the third-color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer comprises a section with the doped impurity.

[0036] Optionally, the display substrate is a light-emitting display substrate; the multiple functional material layers comprise a stacked structure comprising a first light-emitting layer and a second light-emitting layer of the same color; and each of the first light-emitting layer and the second light-emitting layer comprises a section containing the doped impurity.

[0037] Optionally, the display substrate is a white light-emitting display substrate; the multiple functional material layers comprise a stacked structure comprising a first-color light-emitting layer, a second-color light-emitting layer, and a third-color light-emitting layer; and each of the first-color light-emitting layer, the second-color light-emitting layer, and the third-color light-emitting layer comprises a section containing the doped impurity.

[0038] Optionally, the display substrate further comprises a second anode material layer on a side of the anode material layer that is closer to a transistor substrate; wherein the second anode material layer comprises at least one metallic material.

[0039] Optionally, the display substrate also includes an etch stop layer on a side of the second anode material layer that is remote from the anode material layer.

[0040] Optionally, the display substrate further comprises an encapsulation layer on a side remote from a base substrate of a plurality of functional material layers, encapsulating the plurality of functional material layers; and a translucent inorganic protective layer on a side remote from the base substrate of the encapsulation layer; wherein the translucent inorganic protective layer comprises a plurality of translucent inorganic protective blocks; and a respective translucent inorganic protective block of the plurality of translucent inorganic protective blocks is located in a respective subpixel area.

[0041] In another aspect, the present disclosure provides a display device comprising the display substrate described herein and one or more integrated circuits connected to the display substrate.

[0042] In another aspect, the present disclosure provides a method for producing a display substrate, comprising: forming an initial anode material layer extending at least partially over several subpixels, and performing a second impurity doping on the initial anode material layer to form an anode material layer comprising a first anode section at least partially in subpixel regions and a second anode section at least partially in an inter-subpixel region, wherein the first anode section comprises a doped anode impurity; the first anode section and the second anode section comprise at least one common material; and a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section.a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section is spaced apart from adjacent subpixels; and the first anode section comprises an anode of each subpixel.

[0043] Optionally, the method further comprises forming a plurality of initial functional material layers extending at least partially over several subpixels; and performing an initial impurity doping on the plurality of initial functional material layers to form a plurality of functional material layers comprising a first section in the inter-subpixel region and a second section in the subpixel regions; wherein the first section comprises a doped impurity; the first section and the second section comprise at least one common functional material; and a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section.a weight ratio of the doped impurity to the at least one common functional material in the first section is higher than a weight ratio of the doped impurity to the at least one common functional material in the second section; the first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of the respective subpixel.

[0044] Optionally, the method further comprises forming an encapsulation layer on a side remote from a base substrate of a plurality of initial functional material layers, encapsulating the plurality of initial functional material layers; and forming a translucent inorganic protective layer on a side remote from the base substrate of the encapsulation layer; wherein the formation of the translucent inorganic protective layer comprises the formation of a plurality of translucent inorganic protective blocks; each translucent inorganic protective block of the plurality of translucent inorganic protective blocks is located in a respective subpixel region; and the first impurity doping is performed using the plurality of translucent inorganic protective blocks as a mask plate. BRIEF DESCRIPTION OF THE FIGURES

[0045] The following drawings are merely examples to illustrate various disclosed embodiments and are not intended to limit the scope of the present invention. Fig. Figure 1 shows a detailed structure in a display area in a corresponding display device in some embodiments according to the present disclosure. Fig. Figure 2 shows the structure of a pixel in a relevant display board. Fig. Figure 3 shows an intermediate substrate in a process for producing an indicator substrate according to the present disclosure. Fig. Figure 4 shows the structure of a corresponding initial unit in some embodiments according to the present disclosure. Fig. Figure 5A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 5B shows subpixel areas in the respective unit, which are in Fig. 5A is shown. Fig. 5C shows an inter-subpixel area in the respective unit, which is in Fig. 5A is shown. Fig. Figure 6A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 6B shows subpixel areas in the respective unit, which are in Fig. 6A is shown. Fig. 6C shows an inter-subpixel area in the respective unit, which is in Fig. 6A is shown. Fig. Figure 7A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 7B shows subpixel areas in the respective unit, which are in Fig. 7A is shown. Fig. 7C shows an inter-subpixel area in the respective in Fig. 7A shown unit. Fig. Figure 8A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 8B shows subpixel areas in the respective unit, which are in Fig. 8A is shown. Fig. 8C shows an inter-subpixel area in the respective in Fig. 8A shown unit. Fig. Figure 9A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 9B shows subpixel areas in the respective unit, which are in Fig. 9A is shown. Fig. 9C shows an inter-subpixel area in the respective in Fig. 9A shown unit. Fig. Figure 10A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 10B shows subpixel areas in the respective unit, which are in Fig. 10A is shown. Fig. 10C shows an inter-subpixel area in the respective in Fig. 10A unit shown. Fig. 11A to Fig. Figure 11E shows a doping process in some embodiments according to the present disclosure. Fig. Figure 12 shows a display substrate in an image display mode. Fig. Figure 13 shows the correlation between the crosstalk current between neighboring subpixels and the doping of the anode material layer. Fig. 14A to Fig. Figure 14G shows a process for doping an anode material layer in some embodiments according to the present disclosure. Fig. Figure 15A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 15B shows subpixel areas in the respective in Fig. 15A unit shown. Fig. 15C shows an inter-subpixel area in the respective unit, which is in Fig. 15A is shown. Fig. Figure 15D shows an anode material layer in the respective in Fig. 15A unit shown. Fig. 15E shows a functional material layer in the respective in Fig. 15A unit shown. Fig. Figure 16A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 16B shows subpixel areas in the respective unit, which are in Fig. 16A is shown. Fig. 16C shows an inter-subpixel area in the respective in Fig. Unit shown in 16A. Fig. Figure 16D shows an anode material layer in the respective in Fig. Unit shown in 16A. Fig. 16E shows a functional material layer in the respective in Fig. Unit shown in 16A. Fig. Figure 17A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 17B shows subpixel areas in the respective unit, which are in Fig. 17A is shown. Fig. 17C shows an inter-subpixel area in the respective in Fig. Unit shown in 17A. Fig. Figure 17D shows an anode material layer in the respective in Fig. Unit shown in 17A. Fig. 17E shows a functional material layer in the respective in Fig. Unit shown in 17A. Fig. Figure 18A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 18B shows subpixel areas in the respective unit, which are in Fig. 18A is shown. Fig. 18C shows an inter-subpixel area in the respective in Fig. Unit shown in 18A. Fig. Figure 18D shows an anode material layer in the respective in Fig. Unit shown in 18A. Fig. 18E shows a functional material layer in the respective in Fig. Unit shown in 18A. Fig. Figure 19A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 19B shows subpixel areas in the respective unit, which are in Fig. 19A is shown. Fig. 19C shows an inter-subpixel area in the respective in Fig. Unit shown in 19A. Fig. Figure 19D shows an anode material layer in the respective in Fig. Unit shown in 19A. Fig. 19E shows a functional material layer in the respective in Fig. Unit shown in 19A. Fig. Figure 20A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 20B shows subpixel areas in the respective unit, which are in Fig. 20A is shown. Fig. 20C shows an inter-subpixel area in the respective in Fig. 20A unit shown. Fig. Figure 20D shows an anode material layer in the respective in Fig. 20A unit shown. Fig. 20E shows a functional material layer in the Fig. 20A unit shown. Fig. 21A to Fig. Figure 21G shows a process for doping an anode material layer in some embodiments according to the present disclosure. Fig. Figure 22 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 23 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 24 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 25 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 26 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 27 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 28 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 29 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 30 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Fig. Figure 31 shows a protrusion in the second encapsulation layer due to the presence of residual photoresist material beneath the second encapsulation layer. Fig. 32A to Fig. Figure 32F shows a doping process in some embodiments according to the present disclosure. Fig. 33A to Fig. Figure 33G shows a doping process in some embodiments according to the present disclosure. Fig. Figure 34 is a top view of a display substrate in some embodiments according to the present disclosure. DETAILED DESCRIPTION OF THE REVELATION

[0046] The disclosure will now be described in more detail with reference to the following embodiments. It should be noted that the following descriptions of some embodiments are presented here only for illustrative and descriptive purposes. They are not intended to be exhaustive or to be limited to the exact disclosed form.

[0047] Fig. Figure 1 shows a detailed structure in a display area of ​​a display device in some embodiments according to the present disclosure. With reference to Fig. 1 The display device in the display area comprises, in some embodiments, a base substrate BS (e.g., a flexible base substrate); an active layer ACT of a plurality of thin-film transistors TFT on the base substrate BS; a gate insulating layer GI on a side of the active layer ACT furthest from the base substrate BS; a gate electrode G and a first capacitor electrode Ce1 (both parts of a first gate metal layer) on a side of the gate insulating layer GI furthest from the base substrate BS; an insulating layer IN on a side of the gate electrode G and the first capacitor electrode Ce1 furthest from the gate insulating layer GI; a second capacitor electrode Ce2 (part of a second gate metal layer) on a side of the insulating layer IN furthest from the gate insulating layer GI; a dielectric intermediate layer ILD on a side of the second capacitor electrode Ce2 furthest from the gate insulating layer GI;a source electrode S and a drain electrode D (parts of a first SD metal layer) on a side of the dielectric intermediate layer ILD furthest from the gate insulating layer GI; a passivation layer PVX on a side of the source electrode S and the drain electrode D furthest from the dielectric intermediate layer ILD; a first planarization layer PLN1 on a side of the passivation layer PVX furthest from the dielectric intermediate layer ILD; a relay electrode RE (part of a second SD metal layer) on a side of the first planarization layer PLN1 furthest from the passivation layer PVX; a second planarization layer PLN2 on a side of the relay electrode RE (part of a second SD metal layer) furthest from the first planarization layer PLN1; a pixel definition layer PDL, which defines a subpixel aperture and is located on a side of the second planarization layer PLN2 furthest from the base substrate BS;and a light-emitting element LE in the subpixel aperture. The light-emitting element LE comprises an anode AD on a side of the second planarization layer PLN2 furthest from the first planarization layer PLN1; a light-emitting layer EL on a side of the anode AD furthest from the second planarization layer PLN2; and a cathode layer CD on a side of the light-emitting layer EL furthest from the anode AD. The display device in the display area further comprises an encapsulation layer EN, which encapsulates the light-emitting element LE and is located on a side of the cathode layer CD furthest from the base substrate BS.

[0048] In some embodiments, the encapsulation layer EN comprises a first inorganic encapsulation sublayer CVD1 on a side of the cathode layer CD furthest from the base substrate BS, a first organic encapsulation sublayer IJP1 on a side of the first inorganic encapsulation sublayer CVD1 furthest from the base substrate BS, a second inorganic encapsulating sublayer CVD2 on a side of the first organic encapsulating sublayer IJP1 furthest from the base substrate BS, a second organic encapsulating sublayer IJP2 on a side of the second inorganic encapsulating sublayer CVD2 furthest from the base substrate BS, and a third inorganic encapsulating sublayer CVD3 on a side of the second organic encapsulating sublayer IJP2 furthest from the base substrate BS.In alternative embodiments, the encapsulation layer EN does not include the second organic encapsulating sublayer IJP2 and the third inorganic encapsulating sublayer CVD3.

[0049] The display device in the display area further comprises a buffer layer BUF on a side of the encapsulation layer EN furthest from the base substrate BS; a first contact electrode layer TE1 on a side of the buffer layer BUF furthest from the encapsulation layer EN; a contact insulating layer TI on a side of the first contact electrode layer TE1 furthest from the buffer layer BUF; a second contact electrode layer TE2 on a side of the contact insulating layer TI furthest from the buffer layer BUF; and an overcoat layer OC on a side of the second contact electrode layer TE2 furthest from the contact insulating layer TI.

[0050] With reference to Fig. 1 The display device comprises a semiconductor material layer SML, a first gate metal layer Gate1, a second gate metal layer Gate2, a first signal conduction layer SLL1 and a second signal conduction layer SLL2. The display device further comprises an insulating layer IN between the first gate metal layer Gate1 and the second gate metal layer Gate2; a dielectric intermediate layer ILD between the second conductive layer Gate2 and the first signal conduction layer SLL1; and at least one passivation layer PVX or a planarization layer PLN between the first signal conduction layer SLL1 and the second signal conduction layer SLL2.

[0051] One of the limiting factors in the production of high-resolution display panels (e.g., pixels per inch) is the resolution of the mask used to structure the panel's layers. Open masks and fine metal masks are used, particularly in the production of display panels with organic light-emitting diodes (OLEDs). Open masks are primarily used for forming general layers of the OLED display, such as an electron transport layer, an electron injection layer, and a cathode layer. Fine metal masks are used for depositing functional material layers, such as a light-emitting layer. The resolution of the fine metal mask (e.g., the size of the openings in the mask) determines the display resolution. The smaller the openings in the mask, the higher the display resolution.However, the resolution of the fine metal mask is limited by the manufacturing process. Currently, the resolution of the fine metal mask has reached a bottleneck.

[0052] Another factor that severely limits the resolution of the display panel in question is the inherent crosstalk between adjacent subpixels. As the resolution of the display panel increases, the distance between adjacent subpixels decreases. In some display panels, for example, a hole transport layer or a hole injection layer is a common layer that extends across a large number of subpixels. As the distance between adjacent subpixels decreases, crosstalk between adjacent subpixels increases due to the lateral conductivity of these layers.

[0053] Fig. Figure 2 shows the structure of a pixel in a relevant display panel. Referring to Fig. 2. In some embodiments, the display panel comprises a transistor substrate TS with a plurality of pixel driver circuits for driving the light emission of a plurality of light-emitting elements; and a light-emitting substrate LS comprising a plurality of light-emitting elements. Various suitable light-emitting elements can be used in the present array substrate. Examples of suitable light-emitting elements are organic light-emitting diodes, quantum dot light-emitting diodes, and micro light-emitting diodes. Optionally, the light-emitting element is a micro light-emitting diode.

[0054] Fig. Figure 2 shows a pixel of the display panel in question. The pixel comprises at least three subpixels (e.g., a red subpixel, a green subpixel, and a blue subpixel). The light-emitting substrate LS comprises an anode AD and a pixel definition layer PDL defining a plurality of subpixel openings on the transistor substrate TS, a hole injection layer HIL on a side of the anode AD furthest from the transistor substrate TS, a hole transport layer HTL on a side of the hole injection layer HIL furthest from the transistor substrate TS, a plurality of light-emitting layers (including a first light-emitting layer EL1, a second light-emitting layer EL2, and a third light-emitting layer EL3) on a side of the hole transport layer HTL furthest from the transistor substrate TS and in the plurality of subpixel openings, and a hole barrier layer HBL on a side of the plurality of light-emitting layers furthest from the transistor substrate TS.an electron transport layer ETL on a side of the hole barrier layer HBL away from the transistor substrate TS, a cathode CD on a side of the electron transport layer ETL away from the transistor substrate TS and an encapsulation layer EN on a side of the cathode CD away from the transistor substrate TS.

[0055] As in Fig. As shown in Figure 2, a hole transport layer (HTL) and a hole injection layer (HIL) are two common layers that extend over a multitude of subpixels in the display panel in question. In one example, the hole transport layer (HTL) or the hole injection layer (HIL) has a mobility of more than 1 × 10⁻⁶. -3 cm 2 / Vs. The relatively high lateral conductivity in these layers leads to possible crosstalk between neighboring subpixels, especially when the distance between neighboring subpixels decreases.

[0056] Accordingly, the present disclosure provides, among other things, a display substrate, a display device, and a method for producing a display substrate, which substantially eliminate one or more of the problems arising from limitations and disadvantages of the related prior art. In one aspect, the present disclosure provides a display substrate. In some embodiments, the display substrate comprises a plurality of functional material layers that extend at least partially over several subpixels. Optionally, the plurality of functional material layers comprise a first section in an inter-subpixel region and a second section in subpixel regions. Optionally, the first section comprises a doped impurity. Optionally, the first and second sections comprise at least one common functional material.Optionally, the weight percentage of the doped impurity in the first section is higher than the weight percentage of the doped impurity in the second section. The first section can space adjacent subpixels apart. Optionally, the second section includes a light-emitting layer for each subpixel. Optionally, the weight ratio of the doped impurity to the at least one common functional material in the first section is higher than the weight ratio of the doped impurity to the at least one common functional material in the second section.

[0057] The inventors of the present disclosure discover that, surprisingly and unexpectedly, a high-resolution display panel can be achieved through the unique structure and manufacturing process according to the present disclosure. The inventors of the present disclosure have discovered that the resolution of the display panel can be increased by doping an impurity into a first section of at least one layer of a display substrate (e.g., a light-emitting substrate). The display substrate according to the present disclosure comprises a subpixel region and an inter-subpixel region. The at least one layer comprises a first section doped with an impurity and a second section not doped with the impurity. The at least one layer extends at least partially over several subpixels in the display substrate.

[0058] In one example, the first section is at least partially located in the inter-subpixel area and the second section is at least partially located in the subpixel area.

[0059] In another example, the first section is at least partially located in the subpixel area and the second section is at least partially located in the inter-subpixel area.

[0060] Fig. Figure 3 shows an intermediate substrate in a process for producing an indicator substrate according to the present disclosure. Fig. Figure 4 shows the structure of a corresponding initial unit in some embodiments according to the present disclosure. With reference to Fig. 3. In some embodiments, the intermediate substrate comprises a plurality of initial units IU. Each initial unit from the plurality of initial units IU comprises one or more subunits, e.g., a first subunit su1, a second subunit su2, and a third subunit su3. In each subunit of the one or more subunits, the intermediate substrate comprises a respective functional material layer (e.g., a respective light-emitting layer). In one example, in each initial unit of the plurality of initial units IU, at least one layer of the intermediate substrate extends at least partially into the one or more subunits. For example, at least one layer of the intermediate substrate extends at least partially into the first subunit su1, the second subunit su2, and the third subunit su3. Various alternative implementations can be practiced within the scope of this disclosure.

[0061] Fig. Figure 5A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 5B shows subpixel areas in the respective unit, which are in Fig. 5A is shown. Fig. 5C shows an inter-subpixel area in the respective unit, which is in Fig. 5A is shown. Fig. 5A to Fig. The respective unit shown in 5C corresponds to one in Fig. 3 and Fig. 4 shown respective initial units. With reference to Fig. 5A to Fig. In some embodiments, the 5C display substrate comprises subpixel areas (SR) and an inter-subpixel area (ISR). As shown in Fig. 5A to Fig. As shown in Figure 5C, at least one of the subpixel regions SR is substantially surrounded by the inter-subpixel region ISR. As used here, a subpixel region refers to a light-emitting region of a subpixel. Optionally, a pixel can comprise a number of separate light-emitting regions corresponding to a number of subpixels in the pixel. Optionally, the subpixel region is a light-emitting region of a red color subpixel. Optionally, the subpixel region is a light-emitting region of a green color subpixel. Optionally, the subpixel region is a light-emitting region of a blue color subpixel. Optionally, the subpixel region is a light-emitting region of a white color subpixel. The term "inter-subpixel region" refers to a region between adjacent subpixel regions. Optionally, the inter-subpixel region is a region between adjacent subpixel regions within the same pixel.Optionally, the inter-subpixel area is the area between two adjacent subpixel areas consisting of two adjacent pixels. Optionally, the inter-subpixel area is the area between a subpixel area of ​​a red color subpixel and a subpixel area of ​​an adjacent green color subpixel. Optionally, the inter-subpixel area is the area between a subpixel area of ​​a red color subpixel and a subpixel area of ​​an adjacent blue color subpixel. Optionally, the inter-subpixel area is the area between a subpixel area of ​​a green color subpixel and a subpixel area of ​​an adjacent blue color subpixel. As used herein, the term "substantially surrounded" refers to at least 50% (e.g., at least 60%, at least 70%, at least 80%, at least 90%, at least 95%, at least 99%, and 100%) surrounded.

[0062] With reference to Fig. 5A to Fig. In 5C, the inter-subpixel area (ISR) includes a contamination area (IMR) in some embodiments. In the Fig. 5A to Fig. In the example shown in Figure 5C, the contamination area IMR is a section of the inter-subpixel area ISR. Within the scope of this disclosure, various alternative implementations are possible. In one alternative example, the contamination area IMR can be essentially the same as the inter-subpixel area ISR.

[0063] In some embodiments, the display substrate comprises at least one layer. The at least one layer comprises a first section doped with an impurity and a second section not doped with the impurity. The first section is located in the impurity region IMR, and the second section is located at least partially in a corresponding subpixel region SR.

[0064] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown in 5A, the resolution of the display substrate is at least doubled by the impurity area IMR. The impurity area IMR divides each subunit into two subpixel areas, with the two subpixel areas arranged along a row direction.

[0065] Fig. Figure 6A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 6B shows subpixel areas in the respective unit, which are in Fig. 6A is shown. Fig. 6C shows an inter-subpixel area in the respective in Fig. Unit shown in 6A. The unit in Fig. 6A to Fig. The contamination range IMR shown in 6C differs from that shown in Fig. 5A to Fig. The contamination range IMR shown in 5C is reduced by the fact that the Fig. 6A to Fig. The contamination area IMR shown in 6C extends along a line direction, while the one in Fig. 5A to Fig. The contamination area IMR shown in 5C extends along a column direction.

[0066] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown in Figure 6A, the impurity area IMR at least doubles the resolution of the display substrate. The impurity area IMR divides each subunit into two subpixel areas, with the two subpixel areas arranged along a column direction.

[0067] Fig. Figure 7A shows the structure of a respective unit in a display substrate in some embodiments according to the present disclosure. Fig. 7B shows subpixel areas in the respective unit, which are in Fig. 7A is shown. Fig. 7C shows an inter-subpixel area in the respective unit, which is in Fig. 7A is shown. This is in Fig. 7A to Fig. The display substrate shown in 7C comprises two rows of contaminant areas, each subdividing a subunit into three subpixel areas, with the three subpixel areas arranged along a column direction.

[0068] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown in Figure 7A, the resolution of the display substrate is at least tripled by the impurity area IMR. The impurity area IMR divides each subunit into three subpixel areas, with the three subpixel areas arranged along a column direction.

[0069] Fig. Figure 8A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 8B shows subpixel areas in the corresponding unit, which are in Fig. 8A is shown. Fig. 8C shows an inter-subpixel area in the corresponding unit, which is in Fig. 8A is shown. Fig. 8A to Fig. The display substrate shown in 8C comprises three rows of contaminant areas, each subdividing a subunit into four subpixel areas, with the four subpixel areas arranged along a column direction.

[0070] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown in Figure 8A, the resolution of the display substrate is at least quadrupled by the impurity area IMR. The impurity area IMR divides each subunit into four subpixel areas, with the four subpixel areas arranged along a column direction.

[0071] Fig. Figure 9A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 9B shows subpixel areas in the corresponding unit, which are in Fig. 9A is shown. Fig. 9C shows an inter-subpixel area in the corresponding unit, which is in Fig. 9A is shown. This is in Fig. 9A to Fig. The display substrate shown in 9C comprises four rows of contaminant areas, each subdividing a subunit into five subpixel areas, with the five subpixel areas arranged along a column direction.

[0072] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown in Figure 9A, the resolution of the display substrate is increased at least fivefold by the impurity area IMR. The impurity area IMR divides each subunit into five subpixel areas, with the five subpixel areas arranged along a column direction.

[0073] Fig. Figure 10A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 10B shows subpixel areas in the corresponding unit, which are in Fig. 10A is shown. Fig. 10C shows an inter-subpixel area in the corresponding unit, which is in Fig. 10A is shown. This is in Fig. 9A to Fig. The display substrate shown in 9C comprises a column of contaminant areas and four rows of contaminant areas, which divide each subunit into ten subpixel areas, the ten subpixel areas being arranged in a field with five rows and two columns.

[0074] Comparing the respective in Fig. 4 initial unit shown and the respective one in Fig. In the unit shown (10A), the resolution of the display substrate is increased by the impurity region (IMR) to at least ten times the original resolution. The IMR subdivision divides each subunit into ten subpixel areas, with the ten subpixel areas arranged in an array of five rows and two columns.

[0075] The impurity range IMR can be formed by various suitable methods. In some embodiments, the IMR impurity range is formed by doping with an impurity via ion implantation. Examples of impurities include, but are not limited to, boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium, and silicon.

[0076] Fig. 11A to Fig. Figure 11E shows a doping process in some embodiments according to the present disclosure. Referring to Fig. In 11A, an intermediate substrate is provided. The intermediate substrate comprises a transistor substrate TS, one or more light-emitting element layers LEL on the transistor substrate TS, and an encapsulation layer EN that encapsulates the one or more light-emitting element layers LEL. The one or more light-emitting element layers LEL may comprise one or more of the following: a light-emitting material, an organic functional layer, and an anode material layer.

[0077] In Fig. In 11B, a protective layer PR is formed on the encapsulation layer EN. In one example, the protective layer PR comprises a photoresist material. In the areas covered by the protective layer PR, the intermediate substrate is not exposed to doping by ion implantation. In areas not covered by the protective layer PR, the intermediate substrate is subject to doping by ion implantation.

[0078] In Fig. In 11C, doping with an impurity, e.g., by ion implantation, is carried out. As described above, the intermediate substrate is doped by ion implantation in areas not covered by the protective PR layer.

[0079] According to Fig. Following doping, an impurity region (IMR) and subpixel regions (SR) are formed in the display substance. The IMR impurity region separates two adjacent subpixel regions. This results in the formation of a multitude of light-emitting elements (LE).

[0080] Referring to Fig. 11E a second encapsulation layer EN2 is formed on a side of the encapsulation layer EN away from the transistor substrate TS, which encapsulates the multitude of light-emitting elements LE.

[0081] Fig. Figure 12 shows a display substrate in an image display mode. Referring to Fig. 12. The display substrate comprises subpixel areas SR and an inter-subpixel area. The inter-subpixel area includes a contamination area IMR. When the display substrate is configured to display an image, the subpixel areas SR are configured to emit light, while the contamination area IMR does not emit light.

[0082] As described above, the display substrate comprises at least one layer containing a first section doped with an impurity and a second section not doped with the impurity. The first section is located in the impurity region IMR, and the second section is located at least partially in a corresponding subpixel region SR. In some embodiments, the first and second sections comprise at least one common material. In some embodiments, the weight percentage of the impurity in the first section is higher than the weight percentage of the impurity in the second section. Optionally, the impurity is not present in the second section.In some embodiments, the weight ratio between the impurity and the at least one common material in the first section is higher than the weight ratio between the impurity and the at least one common material in the second section. Optionally, the weight ratio of the impurity to the at least one common material in the second section is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0083] In some embodiments, the at least one layer comprises a functional material layer. In some embodiments, the first section and the second section of the functional material layer comprise a common functional material. Examples of the functional material layers are a light-emitting material layer, a hole-transporting material layer, a hole-injection material layer, an electron-transporting material layer, an electron-injection material layer, a charge-generating layer, a hole-blocking material layer, and an electron-blocking material layer. Examples of the common functional materials are a light-emitting material, a hole-transporting material, a hole-injection material, an electron-transporting material, an electron-injection material, a charge-generating material, a hole-blocking material, and an electron-blocking material.

[0084] Examples of impurities include, but are not limited to, boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium, and silicon, or a combination thereof. Further examples of impurities include gallium, indium, carbon, tin, silicon, germanium, krypton, xenon, chlorine, titanium, chromium, nickel, zinc, yttrium, zirconium, niobium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, and tungsten.

[0085] The inventors of the present disclosure have discovered that the ion implantation treatment is not necessarily limited to the functional material layers. Surprisingly and unexpectedly, the inventors of the present disclosure discover that the ion implantation treatment can be applied to an anode material layer to obtain an ultra-high-resolution display substrate.

[0086] Fig. Figure 13 shows the correlation between the crosstalk current between adjacent subpixels and the doping of the anode material layer. If the anode material layer is undoped, the crosstalk current between adjacent subpixels is relatively high (see Figure 13). Fig. 13) If the anode material layer is doped in a region between adjacent subpixels, the crosstalk current between adjacent subpixels decreases significantly. The reduction in crosstalk current between adjacent subpixels is particularly pronounced when the voltage applied to the anode material layer is relatively high.

[0087] In some embodiments, the anode material layer extends at least partially over a multitude of subpixels. For example, the anode material layer extends at least partially over several subpixels within a single pixel. Fig. 14A to Fig. Figure 14G shows a process for doping an anode material layer in some embodiments according to the present disclosure.

[0088] Referring to Fig. In step 14A, a second anode material layer AML2 is formed on a transistor substrate TS, a bank layer BL is formed on one side of the second anode material layer AML2, and a first initial anode material layer IAML1 is formed on the side of the second anode material layer AML2 and the bank layer BL furthest from the transistor substrate TS. The bank layer BL spaced a plurality of second anodes in the second anode material layer AML2 apart.

[0089] According to Fig. In step 14B, a protective layer PR is formed on the side of the first initial anode material layer IAML1 that is remote from the second anode material layer AML2. The substrate is doped with impurities, e.g., by ion implantation. In areas not covered by the protective layer PR, the first initial anode material layer IAML1 is exposed to doping by ion implantation. In an area covered by the protective layer PR, the first initial anode material layer IAML1 is not subject to doping by ion implantation.

[0090] According to Fig. Following doping, an inter-subpixel region (ISR) and subpixel regions (SR) are formed. The inter-subpixel region (ISR) separates two adjacent subpixel regions. The subpixel regions (SR) correspond to the regions where the first initial anode material layer (IAML1) is exposed to doping by ion implantation. The inter-subpixel region (ISR) corresponds to the region where the first initial anode material layer (IAML1) is not subject to doping by ion implantation. As described in Fig. As depicted in 14C, a first anode material layer AML1 is formed after the doping process. The first anode material layer AML1 comprises a first section P1 and a second section P2. The first section P1 of the first anode material layer AML1 is subject to impurity doping, while the second section P2 of the first anode material layer AML1 is not.

[0091] Accordingly, in some embodiments, the display substrate comprises at least one layer. In some embodiments, the at least one layer comprises an anode material layer. The anode material layer extends at least partially over several subpixels in the display substrate. In some embodiments, the at least one layer comprises a first section doped with an impurity and a second section not doped with the impurity. The first section is located in the impurity region IMR and at least partially in a corresponding subpixel region SR, and the second section is located at least partially in the inter-subpixel region ISR. In some embodiments, the first section and the second section comprise at least one common material.In some embodiments, the weight percentage of the impurity in the first section is higher than the weight percentage of the impurity in the second section. Optionally, the impurity is not present in the second section. In some embodiments, the weight ratio between the impurity and the at least one common material in the first section is higher than the weight ratio between the impurity and the at least one common material in the second section. Optionally, the weight ratio of the impurity to the at least one common material in the second section is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0092] In some embodiments, the first and second sections of the anode material layer comprise a common semiconductor material. Optionally, the common semiconductor material is a common metal oxide material or a common metal oxynitride material. Examples of metal oxide materials include, without limitation, indium gallium zinc oxide, indium zinc oxide, indium tin oxide, zinc oxide, gallium oxide, indium oxide, HfInZnO (HIZO), amorphous InGaZnO (amorphous IGZO), InZnO, amorphous InZnO, ZnO:F, In₂O₃:Sn, In₂O₃:Mo, Cd₂SnO₄, ZnO:Al, TiO₂:Nb, Cd-Sn-O, or a combination thereof. Examples of suitable metal oxynitride materials include, without limitation, zinc oxynitride, indium oxynitride, gallium oxynitride, tin oxynitride, cadmium oxynitride, aluminum oxynitride, germanium oxynitride, titanium oxynitride, silicon oxynitride, or any combination thereof. In one example, the common material is indium gallium zinc oxide.In another example, the common material is indium zinc oxide. In another example, the common material is indium tin oxide.

[0093] Examples of impurities include, but are not limited to, boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium, and silicon, or any combination thereof. Further examples of impurities include gallium, indium, carbon, tin, silicon, germanium, krypton, xenon, chlorine, titanium, chromium, nickel, zinc, yttrium, zirconium, niobium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, and tungsten.

[0094] In some embodiments, the first section of the anode material layer has a higher conductivity than the conductivity of the second section of the anode material layer.

[0095] In some embodiments, the first section of the anode material layer has a higher work function than the second section of the anode material layer. In some embodiments, the display substrate further comprises a functional material layer on a side of the anode material layer furthest from a base substrate. The functional material layer is in direct contact with the first and second sections. In one example, the display substrate also comprises a layer of hole injection material on a side of the anode material layer furthest from a base substrate. The hole injection material layer is in direct contact with the first and second sections.

[0096] In some embodiments, the difference between the highest occupied molecular orbital level of the second section of the anode material layer and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section is greater than the difference between the highest occupied molecular orbital level of the first section of the anode material layer and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section. The first section of the anode material layer has a better energy level match with the functional material layer in direct contact with the first section than the energy level match between the second section of the anode material layer and the functional material layer in direct contact with the second section.Since the first section of the anode material layer has an energy level that matches that of the functional material layer, charge carriers (e.g., holes) can be transported from the first section to the functional material layer. Since the second section of the anode material layer does not have an energy level that matches that of the functional material layer, charge carriers (e.g., holes) cannot be transported from the second section to the functional material layer. Accordingly, the region containing the second section of the anode material layer does not emit light, even though a light-emitting material may be present in this region. As above in . Fig. As described in 13 and the associated texts, the second section of the anode material layer also effectively reduces the crosstalk current between neighboring subpixels (e.g. in areas corresponding to first sections of the anode material layer).

[0097] In some embodiments, the second anode material layer AML2 comprises several sublayers. In one example, the second anode material layer AML2 comprises a first sublayer comprising indium tin oxide, a second sublayer on the first sublayer comprising silver, and a third sublayer on a side of the second sublayer furthest from the first sublayer, comprising indium tin oxide. The third sublayer is in direct contact with the first anode material layer AML1.

[0098] Fig. Figure 15A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 15B shows subpixel areas in the corresponding unit, which are in Fig. 15A is shown. Fig. 15C shows an inter-subpixel area in the corresponding unit, which is in Fig. 15A is shown. Fig. Figure 15D shows an anode material layer in the Fig. 15A unit shown. Fig. 15E shows a functional material layer in the Fig. The unit shown in 15A. Fig. 15A to Fig. The respective unit shown in 15C corresponds to one in Fig. 3 and Fig. 4 shown respective initial units. With reference to Fig. 15A to Fig. In some embodiments, the display substrate 15C comprises subpixel areas SR and an inter-subpixel area ISR. As shown in Fig. 15A to Fig. As shown in Figure 15C, at least one corresponding subpixel area of ​​the subpixel areas SR is essentially surrounded by the inter-subpixel area ISR.

[0099] In some embodiments, the display substrate comprises an anode material layer. A first section P1 of the anode material layer is subject to impurity doping, while a second section P2 of the anode material layer is not subject to impurity doping, as described above.

[0100] In some embodiments, the display substrate further comprises a functional material layer (e.g., a light-emitting layer). A first section P1' of the functional material layer is subject to impurity doping, while a second section P2' of the functional material layer is not subject to impurity doping.

[0101] In some embodiments, the doping concentration of the first section P1' of the functional material layer is higher than the doping concentration of the first section P1 of the anode material layer. Optionally, the doping concentration of the first section P1' of the functional material layer is at least twice (e.g., three times, four times, five times, six times, seven times, eight times, nine times, ten times, twenty times, thirty times, forty times, fifty times, seventy times, eighty times, one hundred times or more) the doping concentration of the first section P1 of the anode material layer.

[0102] In one example, the doped impurity in the first section P1' of the functional material layer is the same as the doped impurity in the first section P1 of the anode material layer.

[0103] In another example, the doped impurity in the first section P1' of the functional material layer is different from the doped impurity in the first section P1 of the anode material layer.

[0104] In some embodiments, the doped impurity is an inorganic impurity (for example, the doped impurity is not an organic material). In one example, the doped impurity is an ion. In another example, the doped impurity comprises an inert gas ion. In another example, the doped impurity comprises a nonmetal ion. In another example, the doped impurity comprises an ion of an element of group IA (e.g., H). In another example, the doped impurity comprises an ion of an element of group IIIA (e.g., B). In another example, the doped impurity comprises an ion of an element of group VA (e.g., P). In another example, the doped impurity comprises an ion of an element of group VIIA (e.g., F). In another example, the doped impurity comprises an ion of an element of group VIIIA (e.g., Ar).

[0105] In some embodiments, an orthographic projection of the second section P2 of the anode material layer on a base substrate overlaps at least partially with an orthographic projection of the first section P1' of the functional material layer on the base substrate. In some embodiments, an orthographic projection of the first section P1 of the anode material layer on a base substrate overlaps at least partially with an orthographic projection of the second section P2' of the functional material layer on the base substrate.

[0106] In some embodiments, the second section P2 of the anode material layer and the first section P1' of the functional material layer are located in the inter-subpixel region ISR. In some embodiments, the first section P1 of the anode material layer is located at least partially in the subpixel regions SR, and the second section P2' of the functional material layer is located at least partially in the subpixel regions SR.

[0107] Fig. Figure 16A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 16B shows subpixel areas in the corresponding unit, which are in Fig. 16A is shown. Fig. 16C shows an inter-subpixel area in the corresponding unit, which is in Fig. 16A is shown. Fig. Figure 16D shows an anode material layer in the Fig. Unit shown in 16A. Fig. 16E shows a functional material layer in the Fig. The unit shown in 16A. Fig. 16A to Fig. The embodiment shown in 16E differs from the one shown in Fig. 15A to Fig. 15E embodiment in that the second section P2 of the anode material layer is located in Fig. 16A to Fig. 16E extends along a row direction, while the second section P2 of the anode material layer in Fig. 15A to Fig. 15E extends along a slit direction. The first section P1' of the functional material layer in Fig. 16A to Fig. 16E extends along a row direction, while the first section P1' of the functional material layer in Fig. 15A to Fig. 15E extends along a column direction.

[0108] Fig. Figure 17A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 17B shows subpixel areas in the corresponding unit, which are in Fig. 17A is shown. Fig. 17C shows an inter-subpixel area in the corresponding unit, which is in Fig. 17A is shown. Fig. Figure 17D shows an anode material layer in the respective in Fig. Unit shown in 17A. Fig. 17E shows a functional material layer in the Fig. Unit shown in 17A. As in Fig. 17A to Fig. As shown in Figure 17E, the anode material layer in each unit comprises two rows of second sections. The functional material layer in each unit comprises two rows of first sections.

[0109] Fig. Figure 18A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 18B shows subpixel areas in the corresponding unit, which are in Fig. 18A is shown. Fig. 18C shows an inter-subpixel area in the corresponding unit, which is in Fig. 18A is shown. Fig. Figure 18D shows an anode material layer in the Fig. Unit shown in 18A. Fig. 18E shows a functional material layer in the Fig. Unit shown in 18A. As in the Fig. 18A to Fig. As shown in Figure 18E, the anode material layer in each unit comprises three rows of second sections. The functional material layer in each unit comprises three rows of first sections.

[0110] Fig. Figure 19A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 19B shows subpixel areas in the corresponding unit, which are in Fig. 19A is shown. Fig. 19C shows an inter-subpixel area in the corresponding unit, which is in Fig. 19A is shown. Fig. Figure 19D shows an anode material layer in the Fig. Unit shown in 19A. Fig. 19E shows a functional material layer in the Fig. Unit shown in 19A. As in the Fig. 19A to Fig. As shown in Figure 19E, the anode material layer in each unit comprises four rows of second sections. The functional material layer in each unit comprises four rows of first sections.

[0111] Fig. Figure 20A shows the structure of a corresponding unit in a display substrate in some embodiments according to the present disclosure. Fig. 20B shows subpixel areas in the corresponding unit, which are in Fig. 20A is shown. Fig. 20C shows an inter-subpixel area in the corresponding unit, which is in Fig. 20A is shown. Fig. Figure 20D shows an anode material layer in the corresponding area. Fig. 20A unit shown. Fig. 20E shows a functional material layer in the corresponding area. Fig. 20A unit shown. As in Fig. 20A to Fig. As shown in Figure 20E, the anode material layer in each unit comprises four rows and three columns of second sections. The functional material layer in each unit comprises four rows and three columns of first sections.

[0112] With reference to Fig. 14D, after the formation of the first anode material layer AML1 and the second anode material layer AML2, a plurality of functional material layers are formed on a side of the first anode material layer AML1 away from the transistor substrate TS, a cathode CD is formed on a side of the plurality of functional material layers away from the first anode material layer AML1, optionally a cover layer CPL is formed on a side of the cathode CD away from the first anode material layer AML1, and an encapsulation layer EN is formed on a side of the cathode CD away from the first anode material layer AML1.

[0113] In some embodiments, the multitude of functional material layers includes a light-emitting layer EL (e.g., a red light-emitting layer, a green light-emitting layer, or a blue light-emitting layer).Optionally, the multitude of functional material layers include a hole injection layer (HIL) on the first anode material layer (AML1), a hole transport layer (HTL) on a side of the hole injection layer (HIL) away from the first anode material layer (AML1), a base layer (PL) on a side of the hole transport layer (HTL) away from the first anode material layer (AML1), a light emitting layer (EL) on a side of the base layer (PL) away from the first anode material layer (AML1), an electron transport layer (ETL) on a side of the light emitting layer (EL) away from the first anode material layer (AML1), and an electron injection layer (EIL) on a side of the electron transport layer (ETL) away from the first anode material layer (AML1).

[0114] Referring to Fig. In 14E, a second protective layer PR2 is formed on the side of the encapsulation layer EN opposite the first anode material layer AML1. The second protective layer PR2 is formed in the subpixel regions SR and is not present in the inter-subpixel region ISR. In one example, the second protective layer PR2 comprises a photoresist material. Doping with an impurity, e.g., by ion implantation, is performed. In the regions not covered by the second protective layer PR2, the multiple functional material layers are doped by ion implantation.

[0115] Referring to Fig. In 14F, after doping, a first section P1' of the plurality of functional material layers is formed in the inter-subpixel region ISR, and a second section P2' of the plurality of functional material layers is formed in the subpixel regions SR. The first section P1' of the plurality of functional material layers is subject to impurity doping, while the second section P2' of the plurality of functional material layers is not.

[0116] In some embodiments, the first section P1' of the plurality of functional material layers comprises an impurity doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0117] Examples of common functional materials include a light-emitting material, a hole transport material, a hole injection material, an electron transport material, an electron injection material, a charge-generating material, a hole blocking material, and an electron blocking material.

[0118] Examples of impurities include, but are not limited to, boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium, and silicon, or a combination thereof. Further examples of impurities include gallium, indium, carbon, tin, silicon, germanium, krypton, xenon, chlorine, titanium, chromium, nickel, zinc, yttrium, zirconium, niobium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, and tungsten.

[0119] In some embodiments, the first section P1' of the plurality of functional material layers is subject to degradation and / or degradation by the ion implantation process. As a result, the first section P1' of the plurality of functional material layers is unable to emit light. Furthermore, the first section P1' of the plurality of functional material layers acts as a barrier to reduce the crosstalk current between adjacent subpixels. As described above, the crosstalk current between adjacent subpixels is further reduced by the second section P2 of the first anode material layer AML1. A combination of the first section P1' of the plurality of functional material layers and the second section P2 of the first anode material layer AML1 significantly reduces the crosstalk current between adjacent subpixels.

[0120] According to Fig. In 14G, after ion implantation, the second protective layer PR2 is removed, e.g., by ashing. On a side of the encapsulation layer EN removed from the first anode material layer AML1, a second encapsulation layer EN2 is formed, which encapsulates the plurality of functional material layers. The inventors of the present disclosure have discovered that individual subpixels of the display substrate can be produced by ion implantation, thereby accurately and precisely defining light-emitting regions (e.g., the subpixel regions SR) and non-light-emitting regions (e.g., the inter-subpixel region ISR). The crosstalk current between adjacent subpixels can also be effectively suppressed, thus achieving an ultra-high-resolution display.

[0121] In one example, the first anode material layer AML1 comprises indium gallium tin oxide.

[0122] In another example, the first anode material layer AML1 comprises indium zinc oxide.

[0123] Fig. 21A to Fig. Figure 21G shows a process for doping an anode material layer in some embodiments according to the present disclosure. The process and the indicator substrate, which are described in Fig. 21A to Fig. The ones shown in 21G differ from those shown in Fig. 14A to Fig. 14G are represented by the fact that in the process and the display substrate, which are in Fig. 21A to Fig. 21G are shown, only an initial anode material layer (an initial anode material layer IAML in Fig. 21A) is used, while in the process and the display substrate that are in Fig. 14A to Fig. 14G shows two initial anode material layers (a first initial anode material layer IAML1 and a second initial anode material layer AML2, shown in Fig. 14A). Ion implantation is performed on the initial anode material layer IAML to form an anode material layer AML with a first section P1 and a second section P2. The first section P1 of the anode material layer AML is subject to impurity doping, while the second section P2 of the anode material layer AML is not.

[0124] In some embodiments, the anode material layer (AML) comprises multiple sublayers. In one example, the AML comprises a first sublayer comprising indium tin oxide, a second sublayer on the first sublayer comprising silver, and a third sublayer on a side of the second sublayer, comprising indium tin oxide, opposite the first sublayer. The third sublayer is in direct contact with the plurality of functional material layers. In this case, at least the second sublayer is structured to form a plurality of spaced-apart blocks, each block corresponding to a subpixel. In one example, ion implantation is performed on the indium tin oxide material in the AML.As a result of ion implantation, the first section P1 of the anode material layer AML exhibits a higher conductivity than the second section P2 of the anode material layer AML. Optionally, the first section P1 of the anode material layer AML has a higher work function than the work function of the second section P2 of the anode material layer AML. Optionally, the difference between the highest occupied molecular orbital level of the second section P2 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0125] The method described in the present disclosure can be applied to display substrates of various suitable formats. For example, in some embodiments, the display substrate is a display substrate comprising a monochromatic light-emitting layer (e.g., the display substrate that is in Fig. 14G and Fig. 21G is shown). In another example, in some embodiments, the display substrate is a full-color display substrate comprising subpixels of different colors, e.g., a red subpixel, a green subpixel, and a blue subpixel. The full-color display substrate can be produced using a process similar to that described in Fig. 14A to Fig. The process depicted in 14G is similar.

[0126] Fig. Figure 22 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 22 In some embodiments, the display substrate comprises a transistor substrate TS, a second anode material layer AML2 on the transistor substrate TS, and a first anode material layer AML1 on a side of the second anode material layer AML2 that is removed from the transistor substrate TS. In some embodiments, the first anode material layer AML1 extends at least partially over several subpixels in the display substrate. In some embodiments, the first anode material layer AML1 comprises a first section P1 that is doped with an impurity and a second section P2 that is not doped with the impurity. The first section P1 is located in the impurity region and at least partially in a corresponding subpixel region SR, and the second section P2 is located at least partially in the inter-subpixel region ISR.

[0127] In some embodiments, the first section P1 and the second section P2 comprise at least one common material. In some embodiments, the weight percentage of the impurity in the first section P1 is higher than the weight percentage of the impurity in the second section P2. Optionally, the impurity is not present in the second section P2. In some embodiments, the weight ratio between the impurity and the at least one common material in the first section P1 is higher than the weight ratio between the impurity and the at least one common material in the second section P2. Optionally, the weight ratio of the impurity to the at least one common material in the second section P2 is substantially zero (e.g.,less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002% or less than 0.0001%).

[0128] In some embodiments, the first section P1 and the second section P2 of the first anode material layer AML1 comprise a common semiconductor material. Optionally, the common semiconductor material is a common metal oxide material or a common metal oxynitride material.

[0129] In some embodiments, the first section P1 of the first anode material layer AML1 has a higher conductivity than the conductivity of the second section P2 of the first anode material layer AML1. In some embodiments, the first section P1 of the first anode material layer AML1 has a higher work function than the work function of the second section P2 of the first anode material layer AML1. In some embodiments, the difference between the highest occupied molecular orbital level of the second section P2 of the first anode material layer AML1 and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the first anode material layer AML1 and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0130] In some embodiments, the display substrate further comprises a plurality of first functional material layers. In some embodiments, the plurality of first functional material layers extend at least partially over several subpixels (e.g., several subpixels of a first color) in the display substrate.In some embodiments, the plurality of first functional material layers comprises a hole injection layer HIL on the first anode material layer AML1, a hole transport layer HTL on a side of the hole injection layer HIL away from the first anode material layer AML1, a first base layer PL1 on a side of the hole transport layer HTL away from the first anode material layer AML1, a first light emitting layer EL1 on a side of the first base layer PL1 away from the first anode material layer AML1, an electron transport layer ETL on a side of the first light emitting layer EL1 away from the first anode material layer AML1, and an electron injection layer EIL on a side of the electron transport layer ETL away from the first anode material layer AML1.

[0131] In some embodiments, the plurality of first functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of first functional material layers is subject to impurity doping, while the second section P2' of the plurality of first functional material layers is not. In some embodiments, the first section P1' of the plurality of first functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of first functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a first color).

[0132] In some embodiments, the first section P1' of the plurality of first functional material layers comprises an impurity doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of first functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0133] In some embodiments, the display substrate further comprises a plurality of second functional material layers. In some embodiments, the plurality of second functional material layers extend at least partially over several subpixels (e.g., several subpixels of a second color) in the display substrate.In some embodiments, the plurality of second functional material layers comprises a hole injection layer HIL on the first anode material layer AML1, a hole transport layer HTL on a side of the hole injection layer HIL away from the first anode material layer AML1, a second base layer PL2 on a side of the hole transport layer HTL away from the first anode material layer AML1, a second light emitting layer EL2 on a side of the second base layer PL2 away from the first anode material layer AML1, an electron transport layer ETL on a side of the second light emitting layer EL2 away from the first anode material layer AML1, and an electron injection layer EIL on a side of the electron transport layer ETL away from the first anode material layer AML1.

[0134] In some embodiments, the plurality of second functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of second functional material layers is subject to impurity doping, while the second section P2' of the plurality of second functional material layers is not. In some embodiments, the first section P1' of the plurality of second functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of second functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a second color).

[0135] In some embodiments, the first section P1' of the plurality of second functional material layers comprises an impurity that has been doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of second functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0136] In some embodiments, the display substrate further comprises a plurality of third functional material layers. In some embodiments, the plurality of third functional material layers extend at least partially over several subpixels (e.g., several subpixels of a third color) in the display substrate.In some embodiments, the plurality of third functional material layers comprises a hole injection layer HIL on the first anode material layer AML1, a hole transport layer HTL on a side of the hole injection layer HIL away from the first anode material layer AML1, a third base layer PL3 on a side of the hole transport layer HTL away from the first anode material layer AML1, a third light emitting layer EL3 on a side of the third base layer PL3 away from the first anode material layer AML1, an electron transport layer ETL on a side of the third light emitting layer EL3 away from the first anode material layer AML1, and an electron injection layer EIL on a side of the electron transport layer ETL away from the first anode material layer AML1.

[0137] In some embodiments, the plurality of third functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of third functional material layers is subject to impurity doping, while the second section P2' of the plurality of third functional material layers is not. In some embodiments, the first section P1' of the plurality of third functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of third functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a third color).

[0138] In some embodiments, the first section P1' of the plurality of third functional material layers comprises an impurity that has been doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of third functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0139] Referring to Fig. 22 In some embodiments, the display substrate further comprises a pixel definition layer (PDL) and a plurality of openings extending through the pixel definition layer (PDL). In some embodiments, the plurality of first functional material layers are located in a first respective opening of the plurality of openings, the plurality of second functional material layers are located in a second respective opening of the plurality of openings, and the plurality of third functional material layers are located in a third respective opening of the plurality of openings.

[0140] In some embodiments, an orthographic projection of the second section P2 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the first section P1' of the plurality of first functional material layers on the base substrate. In some embodiments, an orthographic projection of the first section P1 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the second section P2' of the plurality of first functional material layers on the base substrate.

[0141] In some embodiments, an orthographic projection of the second section P2 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the first section P1' of the plurality of second functional material layers on the base substrate. In some embodiments, an orthographic projection of the first section P1 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the second section P2' of the plurality of second functional material layers on the base substrate.

[0142] In some embodiments, an orthographic projection of the second section P2 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the first section P1' of the plurality of third functional material layers on the base substrate. In some embodiments, an orthographic projection of the first section P1 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the second section P2' of the plurality of third functional material layers on the base substrate.

[0143] In some embodiments, an orthographic projection of the pixel definition layer PDL on a base substrate overlaps at least partially with an orthographic projection of the second section P2 of the first anode material layer AML1 on the base substrate.

[0144] In the Fig. The pixel definition layer (PDL) is formed on the display substrate shown in Figure 22 using an insulating material.

[0145] In some embodiments, the display substrate also comprises a bank layer BL on a side of the second anode material layer AML2 furthest from the transistor substrate TS and on a side of the first anode material layer AML1 closer to the transistor substrate TS. In some embodiments, the second anode material layer AML2 comprises a plurality of spaced-apart anode material blocks AMB. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel region SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g.,an indium tin oxide sublayer) of the second anode material layer AML2. Optionally, the respective anode material block comprises all sublayers of the second anode material layer AML2.

[0146] In some embodiments, the bank layer BL is located at least partially within a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is present, and is absent from a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is absent. Optionally, an orthographic projection of the bank layer BL onto the transistor substrate TS overlaps at least partially with an orthographic projection of the pixel definition layer PDL onto the transistor substrate TS. In some embodiments, the pixel definition layer PDL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors, and is absent from a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.In some embodiments, the bank layer BL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors and is not present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.

[0147] In an alternative embodiment, the pixel definition layer (PDL) is present throughout the entire inter-subpixel region (ISR). For example, the pixel definition layer (PDL) is present in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of different colors, and also in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of the same color.

[0148] In an alternative embodiment, the bank layer BL is present throughout the entire inter-subpixel region ISR. For example, the bank layer BL is present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of different colors, and is also present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of the same color.

[0149] In some embodiments, the pixel definition layer (PDL) can be formed using functional materials doped with impurities. Fig. Figure 23 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 23. The display substrate comprises a pixel definition layer (PDL), wherein the pixel definition layer (PDL) comprises a plurality of interpixel functional material layers. In one example, the plurality of interpixel functional material layers is the same as the plurality of first functional material layers. In another example, the plurality of interpixel functional material layers is the same as the plurality of second functional material layers. In yet another example, the plurality of interpixel functional material layers is the same as the plurality of third functional material layers. The plurality of interpixel functional material layers in the pixel definition layer (PDL) are doped with impurities. The doping with impurities can be carried out using the same procedure as the doping of the first section (P1') with impurities.The numerous interpixel functional material layers in the pixel definition layer (PDL) are incapable of emitting light and are non-conductive. Crosstalk is suppressed by the pixel definition layer (PDL).

[0150] In some embodiments, see Fig. 23, the second anode material layer AML2 comprises a plurality of anode material blocks AMB, which are spaced apart from one another. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel area SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g., an indium tin oxide sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises all sublayers of the second anode material layer AML2.

[0151] In some embodiments, where the second anode material layer AML2 comprises a metallic material, the display substrate may also include an etch stop layer ESL on a side of the second anode material layer AML2 that is closer to the transistor substrate TS. If the second anode material layer AML2 is formed by dry etching, the etch stop layer can effectively prevent over-etching of an underlying planarization layer.

[0152] In one example, the first anode material layer AML1 comprises indium gallium tin oxide.

[0153] In another example, the first anode material layer AML1 comprises indium zinc oxide.

[0154] Fig. Figure 24 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. The in Fig. The display substrate shown in Figure 24 differs from the one in Figure 24. Fig. The display substrate shown in 22 is characterized by the fact that the in Fig. The display substrate shown in Figure 24 comprises only one anode material layer, whereas the one in Figure 24... Fig. The display substrate shown in Figure 23 comprises a first anode material layer AML1 and a second anode material layer AML2.

[0155] In some embodiments, the anode material layer (AML) comprises several sublayers. In one example, the AML comprises a first sublayer comprising indium tin oxide, a second sublayer on the first sublayer comprising silver, and a third sublayer on a side of the second sublayer, comprising indium tin oxide, opposite the first sublayer. The third sublayer is in direct contact with the plurality of functional material layers. In another example, ion implantation is performed on the indium tin oxide material in the AML. As a result of the ion implantation, the first section P1 of the AML exhibits a higher conductivity than the second section P2 of the AML. Optionally, the first section P1 of the AML has a higher work function than the work function of the second section P2 of the AML.Optionally, the difference between the highest occupied molecular orbital level of the second section P2 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0156] In some embodiments, the display substrate is a tandem LED display substrate. Fig. Figure 25 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 25 In some embodiments, the display substrate comprises a transistor substrate TS, a second anode material layer AML2 on the transistor substrate TS, and a first anode material layer AML1 on a side of the second anode material layer AML2 opposite the transistor substrate TS. In some embodiments, the first anode material layer AML1 extends at least partially over several subpixels in the display substrate. In some embodiments, the first anode material layer AML1 comprises a first section P1 doped with an impurity and a second section P2 not doped with the impurity. The first section P1 is located in the impurity region and at least partially in a corresponding subpixel region SR, and the second section P2 is located at least partially in the inter-subpixel region ISR.

[0157] In some embodiments, the display substrate further comprises a plurality of first functional material layers. In some embodiments, the plurality of first functional material layers extends at least partially over several subpixels (e.g., several subpixels of a first color) in the display substrate. In some embodiments, the plurality of first functional material layers comprises a hole injection layer (HIL) and a hole transport layer (HTL) on the first anode material layer (AML1), a first hole transport layer (HTL1) on a side of the hole injection layer (HIL) and the hole transport layer (HTL) remote from the first anode material layer (AML1), a first light-emitting layer (EL1) on a side of the first hole transport layer (HTL1) remote from the first anode material layer (AML1), and a first electron transport layer (ETL1) on a side of the first light-emitting layer (EL1) remote from the first anode material layer (AML1).a charge generation layer CGL on a side of the first electron transport layer ETL1 opposite the first anode material layer AML1, a tandem hole injection layer tHIL and a tandem hole transport layer tHTL on a side of the charge generation layer CGL opposite the first anode material layer AML1, a first tandem hole transport layer tHTL1 on a side of the tandem hole injection layer tHIL and the tandem hole transport layer tHTL opposite the first anode material layer AML1, a first tandem light-emitting layer tEL1 on a side of the first tandem hole transport layer tHTL1 opposite the first anode material layer AML1, a second electron transport layer ETL2 on a side of the first tandem light-emitting layer tEL1 opposite the first anode material layer AML1, and an electron injection layer EIL on a side of the first Anode material layer AML 1 remote side of the second electron transport layer ETL2.,

[0158] Optionally, the hole injection layer HIL, the hole transport layer HTL, the first electron transport layer ETL1, the charge generation layer CGL, the tandem hole injection layer tHIL, the tandem hole transport layer tHTL, the second electron transport layer ETL2 and the electron injection layer EIL are common layers that extend over subpixels of different colors.

[0159] In some embodiments, the plurality of first functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of first functional material layers is subject to impurity doping, while the second section P2' of the plurality of first functional material layers is not. In some embodiments, the first section P1' of the plurality of first functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of first functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a first color).

[0160] In some embodiments, the first section P1' of the plurality of first functional material layers comprises an impurity that has been doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of first functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0161] In some embodiments, the display substrate further comprises a plurality of second functional material layers. In some embodiments, the plurality of second functional material layers extends at least partially over several subpixels (e.g., several subpixels of a first color) in the display substrate. In some embodiments, the plurality of second functional material layers comprises a hole injection layer (HIL) and a hole transport layer (HTL) on the first anode material layer (AML1), a second hole transport layer (HTL2) on a side of the hole injection layer (HIL) and the hole transport layer (HTL) remote from the first anode material layer (AML1), a second light-emitting layer (EL2) on a side of the second hole transport layer (HTL2) remote from the first anode material layer (AML1), and a first electron transport layer (ETL1) on a side of the second light-emitting layer (EL2) remote from the first anode material layer (AML1).a charge generation layer CGL on a side of the first electron transport layer ETL1 opposite the first anode material layer AML1, a tandem hole injection layer tHIL and a tandem hole transport layer tHTL on a side of the charge generation layer CGL opposite the first anode material layer AML1, a second tandem hole transport layer tHTL2 on a side of the tandem hole injection layer tHIL and the tandem hole transport layer tHTL opposite the first anode material layer AML1, a second tandem light-emitting layer tEL2 on a side of the second tandem hole transport layer tHTL2 opposite the first anode material layer AML1, a second electron transport layer ETL2 on a side of the second tandem light-emitting layer tEL2 opposite the first anode material layer AML1,and an electron injection layer EIL on a side of the second electron transport layer ETL2 that is remote from the first anode material layer AML1.

[0162] Optionally, the hole injection layer HIL, the hole transport layer HTL, the first electron transport layer ETL1, the charge generation layer CGL, the tandem hole injection layer tHIL, the tandem hole transport layer tHTL, the second electron transport layer ETL2 and the electron injection layer EIL are common layers that extend over subpixels of different colors.

[0163] In some embodiments, the plurality of second functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of second functional material layers is subject to impurity doping, while the second section P2' of the plurality of second functional material layers is not. In some embodiments, the first section P1' of the plurality of second functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of second functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a second color).

[0164] In some embodiments, the first section P1' of the plurality of second functional material layers comprises an impurity that has been doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of second functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0165] In some embodiments, the display substrate further comprises a plurality of third functional material layers. In some embodiments, the plurality of third functional material layers extends at least partially over several subpixels (e.g., several subpixels of a first color) in the display substrate. In some embodiments, the plurality of third functional material layers comprises a hole injection layer (HIL) and a hole transport layer (HTL) on the first anode material layer (AML1), a third hole transport layer (HTL3) on a side of the hole injection layer (HIL) and the hole transport layer (HTL) remote from the first anode material layer (AML1), a third light-emitting layer (EL3) on a side of the third hole transport layer (HTL3) remote from the first anode material layer (AML1), and a first electron transport layer (ETL1) on a side of the third light-emitting layer (EL3) remote from the first anode material layer (AML1).a charge generation layer CGL on a side of the first electron transport layer ETL1 opposite the first anode material layer AML1, a tandem hole injection layer tHIL and a tandem hole transport layer tHTL on a side of the charge generation layer CGL opposite the first anode material layer AML1, a third tandem hole transport layer tHTL3 on a side of the tandem hole injection layer tHIL and the tandem hole transport layer tHTL opposite the first anode material layer AML1, a third tandem light-emitting layer tEL3 on a side of the third tandem hole transport layer tHTL3 opposite the first anode material layer AML1, a second electron transport layer ETL2 on a side of the third tandem light-emitting layer tEL3 opposite the first anode material layer AML1,and an electron injection layer EIL on a side of the second electron transport layer ETL2 that is remote from the first anode material layer AML1.

[0166] Optionally, the hole injection layer HIL, the hole transport layer HTL, the first electron transport layer ETL1, the charge generation layer CGL, the tandem hole injection layer tHIL, the tandem hole transport layer tHTL, the second electron transport layer ETL2 and the electron injection layer EIL are common layers that extend over subpixels of different colors.

[0167] In some embodiments, the plurality of third functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of third functional material layers is subject to impurity doping, while the second section P2' of the plurality of third functional material layers is not. In some embodiments, the first section P1' of the plurality of third functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of third functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a third color).

[0168] In some embodiments, the first section P1' of the plurality of third functional material layers comprises an impurity that has been doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of third functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0169] During the production of the tandem LED display substrate, the impurity doping of the functional material layers can be carried out multiple times. For example, appropriate impurity doping can be performed after an intermediate functional material layer has been formed.

[0170] In some embodiments, see Fig. 25, the display substrate further comprises a bank layer BL on a side of the second anode material layer AML2 furthest from the transistor substrate TS and on a side of the first anode material layer AML1 closer to the transistor substrate TS. In some embodiments, the second anode material layer AML2 comprises a plurality of anode material blocks AMB spaced apart from one another. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel region SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g., an indium tin oxide sublayer) of the second anode material layer AML2.Optionally, the respective anode material block includes all sublayers of the second anode material layer AML2.

[0171] In some embodiments, the bank layer BL is located at least partially within a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is present, and is absent from a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is absent. Optionally, an orthographic projection of the bank layer BL onto the transistor substrate TS overlaps at least partially with an orthographic projection of the pixel definition layer PDL onto the transistor substrate TS. In some embodiments, the pixel definition layer PDL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors, and is absent from a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.In some embodiments, the bank layer BL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors and is not present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.

[0172] In an alternative embodiment, the pixel definition layer (PDL) is present throughout the entire inter-subpixel region (ISR). For example, the pixel definition layer (PDL) is present in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of different colors, and it is also present in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of the same color.

[0173] In an alternative embodiment, the bank layer BL is present throughout the entire inter-subpixel region ISR. For example, the bank layer BL is present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of different colors, and is also present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of the same color.

[0174] In some embodiments, the pixel definition layer (PDL) can be formed using functional materials doped with impurities. Fig. Figure 26 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 26. The display substrate comprises a pixel definition layer (PDL), wherein the pixel definition layer (PDL) comprises a plurality of interpixel functional material layers. In one example, the plurality of interpixel functional material layers is the same as the plurality of first functional material layers. In another example, the plurality of interpixel functional material layers is the same as the plurality of second functional material layers. In yet another example, the plurality of interpixel functional material layers corresponds to the plurality of third functional material layers. The plurality of interpixel functional material layers in the pixel definition layer (PDL) are doped with impurities. The doping with impurities can be performed using the same process as the doping of the first section (P1') with impurities.The numerous interpixel functional material layers in the pixel definition layer (PDL) are incapable of emitting light and are non-conductive. Crosstalk is suppressed by the pixel definition layer (PDL).

[0175] In some embodiments, see Fig. 26, the second anode material layer AML2 comprises a plurality of anode material blocks AMB, which are spaced apart from one another. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel region SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g., an indium tin oxide sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises all sublayers of the second anode material layer AML2.

[0176] In some embodiments, where the second anode material layer AML2 comprises a metallic material, the display substrate may also include an etch stop layer ESL on the side of the second anode material layer AML2 that is closer to the transistor substrate TS. If dry etching is performed to form the second anode material layer AML2, the etch stop layer can effectively prevent over-etching on an underlying planarization layer.

[0177] In one example, the first anode material layer AML1 comprises indium gallium tin oxide.

[0178] In another example, the first anode material layer AML1 comprises indium zinc oxide.

[0179] Fig. Figure 27 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. The in Fig. The display substrate shown in Figure 27 differs from that in Figure 27. Fig. The display substrate shown in 25 is characterized by the fact that the in Fig. The display substrate shown in 27 comprises only one anode material layer, whereas the one in Fig. The display substrate shown in Figure 25 comprises a first anode material layer AML1 and a second anode material layer AML2.

[0180] In some embodiments, the anode material layer (AML) comprises several sublayers. In one example, the AML comprises a first sublayer comprising indium tin oxide, a second sublayer on the first sublayer comprising silver, and a third sublayer on a side of the second sublayer, comprising indium tin oxide, opposite the first sublayer. The third sublayer is in direct contact with the plurality of functional material layers. In another example, ion implantation is performed on the indium tin oxide material in the AML. As a result of the ion implantation, the first section P1 of the AML has a higher conductivity than the second section P2 of the AML. Optionally, the first section P1 of the AML has a higher work function than the work function of the second section P2 of the AML.Optionally, the difference between the highest occupied molecular orbital level of the second section P2 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0181] In some embodiments, the display substrate is a tandem LED display substrate. Fig. Figure 28 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 28 In some embodiments, the display substrate comprises a transistor substrate TS, a second anode material layer AML2 on the transistor substrate TS, and a first anode material layer AML1 on a side of the second anode material layer AML2 opposite the transistor substrate TS. In some embodiments, the first anode material layer AML1 extends at least partially over several subpixels in the display substrate. In some embodiments, the first anode material layer AML1 comprises a first section P1 doped with an impurity and a second section P2 not doped with the impurity. The first section P1 is located in the impurity region and at least partially in a corresponding subpixel region SR, and the second section P2 is located at least partially in the inter-subpixel region ISR.

[0182] In some embodiments, the first section P1 and the second section P2 comprise at least one common material. In some embodiments, the weight percentage of the impurity in the first section P1 is higher than the weight percentage of the impurity in the second section P2. Optionally, the impurity is not present in the second section P2. In some embodiments, the weight ratio between the impurity and the at least one common material in the first section P1 is higher than the weight ratio between the impurity and the at least one common material in the second section P2. Optionally, the weight ratio of the impurity to the at least one common material in the second section P2 is substantially zero (e.g.,less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002% or less than 0.0001%).

[0183] In some embodiments, the first section P1 and the second section P2 of the first anode material layer AML1 comprise a common semiconductor material. Optionally, the common semiconductor material is a common metal oxide material or a common metal oxynitride material.

[0184] In some embodiments, the first section P1 of the first anode material layer AML1 has a higher conductivity than the conductivity of the second section P2 of the first anode material layer AML1. In some embodiments, the first section P1 of the first anode material layer AML1 has a higher work function than the work function of the second section P2 of the first anode material layer AML1. In some embodiments, the difference between the highest occupied molecular orbital level of the second section P2 of the first anode material layer AML1 and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the first anode material layer AML1 and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0185] In some embodiments, the display substrate further comprises a plurality of functional material layers. In some embodiments, the plurality of functional material layers extend at least partially over several subpixels in the display substrate. In some embodiments, the plurality of functional material layers comprises a hole injection layer (HIL) on the first anode material layer (AML1), a first light-emitting layer (EL1) and a second light-emitting layer (EL2) on a side of the hole injection layer (HIL) opposite the first anode material layer (AML1), an electron transport layer (ETL) on a side of the first light-emitting layer (EL1) and the second light-emitting layer (EL2) opposite the first anode material layer (AML1), and a charge generation layer (CGL) on a side of the electron transport layer (ETL) opposite the first anode material layer (AML1).a hole injection layer (HIL) on a side of the charge generation layer (CGL) opposite the first anode material layer (AML1), a hole transport layer (HTL) on a side of the hole injection layer (HIL) opposite the first anode material layer (AML1), a third light-emitting layer (EL3) on a side of the hole transport layer (HTL) opposite the first anode material layer (AML1), a hole barrier layer (HBL) on a side of the third light-emitting layer (EL3) opposite the first anode material layer (AML1), and an electron injection layer on a side of the hole barrier layer (HBL) opposite the first anode material layer (AML1). In some embodiments, the display substrate further comprises a cathode (CD) on a side of the plurality of functional material layers opposite the first anode material layer (AML1).a CPL cover layer on a side of the cathode CD away from the first anode material layer AML1 and a lithium fluoride layer LiF on a side of the CPL cover layer away from the first anode material layer AML1.

[0186] In some embodiments, the plurality of functional material layers comprises a first section P1' in the inter-subpixel region ISR and a second section P2' in the subpixel regions SR. The first section P1' of the plurality of functional material layers is subject to impurity doping, while the second section P2' is not. In some embodiments, the first section P1' of the plurality of functional material layers is incapable of emitting light. Furthermore, the first section P1' of the plurality of functional material layers acts as a barrier to reduce crosstalk current between adjacent subpixels (e.g., adjacent subpixels of a first color).

[0187] In some embodiments, the first section P1' of the plurality of functional material layers comprises an impurity doped by ion implantation. In some embodiments, the first section P1' and the second section P2' of each of the plurality of functional material layers comprise at least one common functional material. In some embodiments, the weight percentage of the impurity in the first section P1' is higher than the weight percentage of the impurity in the second section P2'. Optionally, the impurity is not present in the second section P2'. In some embodiments, the weight ratio between the impurity and the at least one common functional material in the first section P1' is higher than the weight ratio between the impurity and the at least one common functional material in the second section P2'.Optionally, the weight ratio of the impurity to the at least one common functional material in the second section P2' in at least one of a hole transport layer HTL, a hole injection layer HIL, an electron transport layer ETL or an electron injection layer EIL is substantially zero (e.g., less than 0.001%, less than 0.0009%, less than 0.0008%, less than 0.0007%, less than 0.0006%, less than 0.0005%, less than 0.0004%, less than 0.0003%, less than 0.0002%, or less than 0.0001%).

[0188] In some embodiments, an orthographic projection of the second section P2 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the first section P1' of the plurality of functional material layers on the base substrate. In some embodiments, an orthographic projection of the first section P1 of the first anode material layer AML1 on a base substrate overlaps at least partially with an orthographic projection of the second section P2' of the plurality of functional material layers on the base substrate.

[0189] In some embodiments, see Fig. 28, the display substrate further comprises a bank layer BL on a side of the second anode material layer AML2 furthest from the transistor substrate TS and on a side of the first anode material layer AML1 closer to the transistor substrate TS. In some embodiments, the second anode material layer AML2 comprises a plurality of spaced-apart anode material blocks AMB. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel region SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g., an indium tin oxide sublayer) of the second anode material layer AML2.Optionally, the respective anode material block includes all sublayers of the second anode material layer AML2.

[0190] In some embodiments, the bank layer BL is located at least partially within a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is present, and is absent from a sub-region of the inter-subpixel area ISR where the pixel definition layer PDL is absent. Optionally, an orthographic projection of the bank layer BL onto the transistor substrate TS overlaps at least partially with an orthographic projection of the pixel definition layer PDL onto the transistor substrate TS. In some embodiments, the pixel definition layer PDL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors, and is absent from a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.In some embodiments, the bank layer BL is present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of different colors and is not present in a sub-region of the inter-subpixel area ISR between two adjacent light-emitting layers of the same color.

[0191] In an alternative embodiment, the pixel definition layer (PDL) is present throughout the entire inter-subpixel region (ISR). For example, the pixel definition layer (PDL) is present in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of different colors, and it is also present in a sub-region of the inter-subpixel region (ISR) between two adjacent light-emitting layers of the same color.

[0192] In an alternative embodiment, the bank layer BL is present throughout the entire inter-subpixel region ISR. For example, the bank layer BL is present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of different colors, and is also present in a sub-region of the inter-subpixel region ISR between two adjacent light-emitting layers of the same color.

[0193] Fig. Figure 29 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 29 The display substrate comprises a pixel definition layer (PDL), wherein the pixel definition layer (PDL) comprises a plurality of interpixel functional material layers. In one example, the plurality of interpixel functional material layers is the same as the plurality of first functional material layers. In another example, the plurality of interpixel functional material layers is the same as the plurality of second functional material layers. In yet another example, the plurality of interpixel functional material layers corresponds to the plurality of third functional material layers. The plurality of interpixel functional material layers in the pixel definition layer (PDL) are doped with impurities. The doping with impurities can be carried out using the same procedure as the doping of the first section (P1') with impurities.The numerous interpixel functional material layers in the pixel definition layer (PDL) are incapable of emitting light and are non-conductive. Crosstalk is suppressed by the pixel definition layer (PDL).

[0194] In some embodiments, see Fig. 29, the second anode material layer AML2 comprises a plurality of anode material blocks AMB, which are spaced apart from one another. Each anode material block from the plurality of anode material blocks AMB is located at least partially within a respective subpixel area SR. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises at least one metallic sublayer (e.g., a silver sublayer) and at least one non-metallic sublayer (e.g., an indium tin oxide sublayer) of the second anode material layer AML2. Optionally, each anode material block comprises all sublayers of the second anode material layer AML2.

[0195] In some embodiments, where the second anode material layer AML2 is made of a metallic material, the display substrate may also include an etch stop layer ESL on the side of the second anode material layer AML2 that is closer to the transistor substrate TS. If dry etching is performed to form the second anode material layer AML2, the etch stop layer can effectively prevent over-etching on an underlying planarization layer.

[0196] In one example, the first anode material layer AML1 comprises indium gallium tin oxide.

[0197] In another example, the first anode material layer AML1 comprises indium zinc oxide.

[0198] Fig. Figure 30 shows the structure of a section of a display substrate in some embodiments according to the present disclosure. The in Fig. The display substrate shown in section 30 differs from that in Fig. The display substrate shown in 28 is characterized by the fact that the in Fig. The display substrate shown in Figure 30 comprises only one anode material layer, whereas the one in Figure 30... Fig. The display substrate shown in Figure 28 comprises a first anode material layer AML1 and a second anode material layer AML2.

[0199] In some embodiments, the anode material layer (AML) comprises several sublayers. In one example, the AML comprises a first sublayer comprising indium tin oxide, a second sublayer on the first sublayer comprising silver, and a third sublayer on a side of the second sublayer, comprising indium tin oxide, opposite the first sublayer. The third sublayer is in direct contact with the plurality of functional material layers. In another example, ion implantation is performed on the indium tin oxide material in the AML. As a result of the ion implantation, the first section P1 of the AML exhibits a higher conductivity than the second section P2 of the AML. Optionally, the first section P1 of the AML has a higher work function than the work function of the second section P2 of the AML.Optionally, the difference between the highest occupied molecular orbital level of the second section P2 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the second section P2 is greater than the difference between the highest occupied molecular orbital level of the first section P1 of the anode material layer AML and the highest occupied molecular orbital level of the functional material layer in direct contact with the first section P1.

[0200] When doping the functional material layers with impurities, a protective layer PR is used as a mask plate, as described above. Typically, the protective layer PR consists of a photoresist material. After doping with impurities, the protective layer PR is then removed, e.g., by ashing. The inventors of the present disclosure have found that ashing is often insufficient to remove the photoresist material, leaving residues of photoresist material in the subpixel regions. Fig. Figure 31 shows a protrusion in the second encapsulation layer, which is due to the presence of residual photoresist material beneath the second encapsulation layer. Furthermore, ashing of the photoresist material often results in a relatively dark residual material, which impairs the light emission efficiency of the display substrate.

[0201] The inventors of the present disclosure have discovered that, surprisingly and unexpectedly, a transparent inorganic protective layer can prevent the adverse effects of the photoresist material in the impurity doping process. Examples of transparent inorganic materials suitable for producing the transparent inorganic protective layer include, without limitation, transparent metallic materials, transparent metal oxide materials, transparent metal nitride materials, and transparent metal oxynitride materials.

[0202] Fig. 32A to Fig. Figure 32F shows a doping process in some embodiments according to the present disclosure. Fig. Figure 32A shows an intermediate substrate. The intermediate substrate comprises a transistor substrate TS, one or more light-emitting element layers LEL on the transistor substrate TS, and an encapsulation layer EN that encapsulates the one or more light-emitting element layers LEL. The one or more light-emitting element layers LEL can comprise one or more layers of a light-emitting material layer, an organic functional layer, and an anode material layer. A transparent inorganic material layer LTML is formed on the side of the encapsulation layer EN facing away from the transistor substrate TS.

[0203] In Fig. 32B is a protective layer PR formed on the encapsulation layer EN. In one example, the protective layer PR comprises a photoresist material.

[0204] According to Fig. In step 32C, the translucent inorganic material layer is structured using the protective layer PR as a mask plate, thereby forming a translucent inorganic protective layer LTPL. The translucent inorganic protective layer LTPL separates the protective layer PR from the encapsulation layer EN. In the areas covered by the protective layer PR and the translucent inorganic protective layer LTPL, the intermediate substrate is not doped by ion implantation. In areas not covered by the protective layer PR and the translucent inorganic protective layer LTPL, the intermediate substrate is doped by ion implantation.

[0205] According to Fig. In step 32D, the doping of an impurity, e.g., by ion implantation, is carried out using the protective layer PR and the translucent inorganic protective layer LTPL as a mask plate. In areas not covered by the protective layer PR and the translucent inorganic protective layer LTPL, the intermediate substrate is subjected to doping by ion implantation.

[0206] As in Fig. As shown in Figure 32E, after doping, an impurity region (IMR) and subpixel regions (SR) are formed in the display substrate. The IMR impurity region separates two adjacent subpixel regions. This creates a multitude of light-emitting elements (LE). The protective layer is removed. The transparent inorganic protective layer (LTPL) remains in the subpixel regions (SR).

[0207] According to Fig. 32F, on a side of the translucent inorganic protective layer LTPL and the encapsulation layer EN away from the transistor substrate TS, a second encapsulation layer EN2 is formed to encapsulate the multitude of light-emitting elements LE.

[0208] In the Fig. 33A to Fig. 33G is a doping process in some embodiments as described in the present disclosure. Fig. Figure 33A shows an intermediate substrate. The intermediate substrate comprises a transistor substrate TS, one or more light-emitting element layers LEL on the transistor substrate TS, and an encapsulation layer EN that encapsulates the one or more light-emitting element layers LEL. The one or more light-emitting element layers LEL can comprise one or more layers of a light-emitting material layer, an organic functional layer, and an anode material layer. A transparent inorganic material layer LTML is formed on the side of the encapsulation layer EN facing away from the transistor substrate TS.

[0209] As in Fig. As shown in Figure 33B, a protective layer PR is formed on the encapsulation layer EN. In one example, the protective layer PR comprises a photoresist material.

[0210] According to Fig. In step 33C, the translucent inorganic material layer is structured using the protective layer PR as a mask plate, thereby forming a translucent inorganic protective layer LTPL. The translucent inorganic protective layer LTPL separates the protective layer PR from the encapsulation layer EN. In the areas covered by the protective layer PR and the translucent inorganic protective layer LTPL, the intermediate substrate is not doped by ion implantation. In the areas not covered by the protective layer PR and the translucent inorganic protective layer LTPL, the intermediate substrate is doped by ion implantation.

[0211] As in Fig. As shown in 33D, the protective layer is removed.

[0212] According to Fig. In step 33E, the doping of an impurity, e.g., by ion implantation, is carried out using the translucent inorganic protective layer LTPL as a mask plate. In areas not covered by the translucent inorganic protective layer LTPL, the intermediate substrate is doped by ion implantation.

[0213] According to Fig. Following doping, 33F creates an impurity region (IMR) and subpixel regions (SR) within the display substrate. The IMR separates two adjacent subpixel regions, thus forming a multitude of light-emitting elements (LE). The transparent inorganic protective layer (LTPL) is located within the subpixel regions (SR) and does not extend into the inter-subpixel region (ISR).

[0214] Referring to Fig. 33G, a second encapsulation layer EN2 is formed on a side of the translucent inorganic protective layer LTPL and the encapsulation layer EN away from the transistor substrate TS, in order to encapsulate the multitude of light-emitting elements LE.

[0215] Fig. Figure 34 is a top view of a display substrate in some embodiments according to the present disclosure. Referring to Fig. 34 In some embodiments, the translucent inorganic protective layer comprises a plurality of translucent inorganic protective blocks LTPB in the subpixel areas.

[0216] In another aspect, the present disclosure provides a display device comprising the display substrate described herein or produced by a method described herein, and one or more integrated circuits connected to the display. Examples of suitable display devices include, without limitation, electronic paper, a mobile phone, a tablet computer, a television, a monitor, a notebook, a digital album, a GPS, etc.

[0217] In another aspect, the present disclosure provides a method for producing a display substrate. In some embodiments, the method comprises forming a plurality of initial functional material layers extending at least partially over several subpixels; and performing a first impurity doping on the plurality of initial functional material layers to form a plurality of functional material layers comprising a first section in an inter-subpixel region and a second section in subpixel regions. Optionally, the first section comprises a doped impurity. Optionally, the first and second sections comprise at least one common functional material. Optionally, the weight percentage of the doped impurity in the first section is higher than the weight percentage of the doped impurity in the second section.The first section can separate adjacent subpixels. Optionally, the second section comprises a light-emitting layer for each subpixel. Optionally, the weight ratio of the doped impurity to the at least one common functional material in the second section is essentially zero. Optionally, the weight ratio of the doped impurity to the at least one common functional material in the first section is higher than the weight ratio of the doped impurity to the at least one common functional material in the second section.

[0218] In some embodiments, the method further comprises forming an initial anode material layer that extends at least partially over several subpixels; and performing a second impurity doping on the initial anode material layer to form an anode material layer comprising a first anode section at least partially in the subpixel regions and a second anode section at least partially in the inter-subpixel region. Optionally, the first anode section comprises a doped anode impurity. Optionally, the first anode section and the second anode section comprise at least one common material. Optionally, the weight percentage of the doped anode impurity in the first anode section is higher than the weight percentage of the doped anode impurity in the second section.Optionally, the weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than the weight ratio of the doped anode impurity to the at least one common material in the second anode section. Optionally, the second anode section is spaced between adjacent subpixels. Optionally, the first anode section comprises one anode of the respective subpixel. Optionally, the weight ratio of the doped anode impurity to the at least one common material in the second anode section is essentially zero.

[0219] In some embodiments, the method further comprises forming a pixel definition layer. Optionally, forming the pixel definition layer includes forming a plurality of interpixel functional material layers doped with impurities. Optionally, the plurality of interpixel functional material layers in the pixel definition layer are incapable of emitting light.

[0220] In some embodiments, the method further comprises forming a monochromatic light-emitting display substrate. Optionally, the method includes performing impurity doping on the plurality of initial functional material layers to form a stacked structure comprising a light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer. Optionally, each of the light-emitting layer, hole transport layer, hole injection layer, electron transport layer, and electron injection layer comprises a section containing the doped impurity.

[0221] In some embodiments, the method further comprises forming a full-color display substrate. Optionally, the method comprises performing impurity doping on the plurality of initial first functional material layers to form a first stacked structure comprising a first-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; performing impurity doping on the plurality of initial second functional material layers to form a second stacked structure comprising a second-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; and performing impurity doping on the plurality of initial third functional material layers to form a third stacked structure.which comprises a third-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer. Optionally, each of the first-color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer includes a section containing the doped impurity. Optionally, each of the second-color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer includes a section containing the doped impurity. Optionally, each of the third-color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer, and the electron injection layer includes a section containing the doped impurity.

[0222] In some embodiments, the method further comprises forming a light-emitting tandem display substrate. Optionally, the method includes performing impurity doping on the plurality of initial first functional material layers to form a stacked structure comprising a first light-emitting layer and a second light-emitting layer of the same color. Optionally, each of the first light-emitting layer and the second light-emitting layer comprises a section containing the doped impurity.

[0223] In some embodiments, the method further comprises forming a white light-emitting display substrate. Optionally, the method includes performing impurity doping on the plurality of initial first functional material layers to form a stacked structure comprising a first-color light-emitting layer, a second-color light-emitting layer, and a third-color light-emitting layer. Optionally, each of the first-color light-emitting layer, the second-color light-emitting layer, and the third-color light-emitting layer comprises a section containing the doped impurity.

[0224] In some embodiments, the method further comprises, prior to the first impurity doping, forming an encapsulation layer on a side of the plurality of initial functional material layers remote from a base substrate, and forming a transparent inorganic protective layer on a side of the encapsulation layer remote from the base substrate. Optionally, the formation of the transparent inorganic protective layer comprises forming a plurality of transparent inorganic protective blocks. Optionally, a corresponding transparent inorganic protective block from the plurality of transparent inorganic protective blocks is located in a corresponding subpixel region. Optionally, the first impurity doping is performed using the plurality of transparent inorganic protective blocks as a mask plate.

[0225] The foregoing description of the embodiments of the invention has been provided for illustrative and descriptive purposes. It is not intended to be exhaustive or to limit the invention to the exact form or to exemplary embodiments disclosed. Accordingly, the foregoing description should be regarded as illustrative rather than limiting. Naturally, many modifications and variations are obvious to those skilled in the art. The embodiments have been selected and described to explain the principles of the invention and its best possible practical application, and to enable those skilled in the art to understand the invention in various embodiments and with various modifications suitable for the respective use or implementation.It is intended that the scope of the invention be defined by the appended claims and their equivalents, in which all terms are meant in their broadest meaningful sense unless otherwise specified. Therefore, the term "the invention," "the present invention," or the like does not necessarily imply a limitation of the scope of the claims to a particular embodiment, and reference to exemplary embodiments of the invention does not imply a limitation of the invention, nor can such a limitation be inferred. The invention is limited only by the spirit and scope of the appended claims. Furthermore, these claims may include the use of "first," "second," etc., followed by nouns or elements.These terms are to be understood as a nomenclature and should not be interpreted as limiting the number of elements modified by this nomenclature unless a specific number has been indicated. All described advantages and benefits may not apply to all embodiments of the invention. A person skilled in the art may modify the described embodiments without departing from the scope of the present invention as defined in the following claims. Furthermore, no element or component in the present disclosure is intended to be disclosed to the public, regardless of whether the element or component is expressly mentioned in the following claims.

Claims

[1] Display substrate comprising a multitude of functional material layers that extend at least partially over several subpixels; wherein the multitude of functional material layers comprise a first section in an inter-subpixel area and a second section in subpixel areas; the first section contains a doped impurity; the first section and the second section must include at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; The first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of a respective subpixel. [2] Display substrate according to claim 1, wherein a weight ratio of the doped impurity to the at least one common functional material in the first section is higher than a weight ratio of the doped impurity to the at least one common functional material in the second section. [3] Display substrate according to claim 1, wherein the weight ratio of the doped impurity to the at least one common functional material in the second section is substantially zero in at least one of a hole transport layer, a hole injection layer, an electron transport layer or an electron injection layer. [4] Display substrate according to claim 1, further comprising an anode material layer which extends at least partially over several subpixels; the anode material layer comprises a first anode section at least partially in the subpixel areas and a second anode section at least partially in the inter-subpixel area; the first anode section includes a doped anode impurity; the first anode section and the second anode section comprise at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section spacing adjacent subpixels apart; and the first anode section comprises an anode of the respective subpixel. [5] Display substrate according to claim 4, wherein the weight ratio of the doped anode impurity to the at least one common material in the second anode section is substantially zero. [6] Display substrate according to claim 4, wherein the first anode section and the second anode section comprise at least one common semiconductor material; the first anode section has a higher conductivity than the conductivity of the second anode section; and a difference between a highest occupied molecular orbital level of the second anode section and a highest occupied molecular orbital level of a functional material layer in direct contact with the second anode section is greater than a difference between a highest occupied molecular orbital level of the first anode section and a highest occupied molecular orbital level of the functional material layer in direct contact with the first anode section. [7] Display substrate according to claim 4, wherein the first anode section and the second anode section comprise at least one common metal oxide material. [8] Display substrate according to claim 4, wherein an orthographic projection of the second anode section onto a base substrate overlaps at least partially with an orthographic projection of the first section onto the base substrate; and an orthographic projection of the first anode section on the base substrate overlaps at least partially with an orthographic projection of the second section on the base substrate. [9] Display substrate according to claim 4, wherein the doped impurity or the doped anode impurity comprises at least one of boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium or silicon. [10] Display substrate according to claim 1, further comprising a pixel definition layer; wherein the pixel definition layer comprises a plurality of interpixel functional material layers doped with impurities; and the multitude of interpixel functional material layers in the pixel definition layer are unable to emit light. [11] Display substrate according to claim 1, wherein the plurality of functional material layers comprise a stacked structure comprising a light-emitting layer, a hole-transporting layer, a hole-injection layer, an electron-transporting layer and an electron-injection layer; and each of the light-emitting layer, hole-transporting layer, hole-injection layer, electron-transporting layer and electron-injection layer comprises a section with the doped impurity. [12] Display substrate according to claim 1, comprising a plurality of first functional material layers extending at least partially over several subpixels of a first color, a plurality of second functional material layers extending at least partially over several subpixels of a second color, and a plurality of third functional material layers extending at least partially over several subpixels of a third color; wherein the plurality of first functional material layers comprise a first stacked structure comprising a light-emitting layer of a first color, a hole transport layer, a hole injection layer, an electron transport layer and an electron injection layer; Each of the light-emitting layer of the first color, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity; the multitude of second functional material layers comprise a second stacked structure comprising a second color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; Each of the second color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity; the multitude of second functional material layers comprise a third stacked structure comprising a third-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; and Each of the third color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity. [13] Display substrate according to claim 1, wherein the display substrate is a light-emitting display substrate; the multiple functional material layers comprise a stacked structure that includes a first light-emitting layer and a second light-emitting layer of the same color; and Each of the first light-emitting layer and the second light-emitting layer includes a section containing the doped impurity. [14] Display substrate according to claim 1, wherein the display substrate is a white light-emitting display substrate; the multiple functional material layers comprise a stacked structure that includes a light-emitting layer of a first color, a light-emitting layer of a second color, and a light-emitting layer of a third color; and Each of the light-emitting layer of the first color, the light-emitting layer of the second color, and the light-emitting layer of the third color comprises a section containing the doped impurity. [15] Display substrate according to claim 4, further comprising a second anode material layer on a side of the anode material layer remote from the plurality of functional material layers; wherein the second anode material layer comprises at least one metallic material. [16] Display substrate according to claim 15, further comprising an etch stop layer on a side of the second anode material layer away from the anode material layer. [17] Display substrate according to claim 1, further comprising: an encapsulation layer on a side of the plurality of functional material layers remote from a base substrate, which encapsulates the plurality of functional material layers; and a translucent inorganic protective layer on one side of the encapsulation layer away from the base substrate; wherein the translucent inorganic protective layer comprises a plurality of translucent inorganic protective blocks; and Each of the many translucent inorganic protective blocks is located in a respective subpixel area. [18] Display device comprising the display substrate according to any one of claims 1 to 17 and one or more integrated circuits connected to the display substrate. [19] Method for producing an indicator substrate, comprising: Forming a multitude of initial functional material layers that extend at least partially across multiple subpixels; and Performing an initial impurity doping on the multitude of initial functional material layers to form a multitude of functional material layers comprising a first section in an inter-subpixel area and a second section in subpixel areas; the first section comprises a doped impurity; the first section and the second section must include at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; a weight ratio of the doped impurity to the at least one common functional material in the first section is higher than a weight ratio of the doped impurity to the at least one common functional material in the second section; The first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of a respective subpixel. [20] The method of claim 19, further comprising: Forming an initial anode material layer that extends at least partially over several subpixels; and Performing a second impurity doping on the initial anode material layer to form an anode material layer that includes a first anode section at least partially in the subpixel areas and a second anode section at least partially in the inter-subpixel area; wherein the first anode section comprises a doped anode impurity; the first anode section and the second anode section comprise at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section spacing adjacent subpixels apart; and the first anode section comprises an anode of the respective subpixel. [21] The method of claim 19, further comprising, prior to carrying out the first impurity doping: Forming an encapsulation layer on a side of the plurality of initial functional material layers remote from a base substrate, encapsulating the plurality of initial functional material layers; and Formation of a translucent inorganic protective layer on a side of the encapsulation layer furthest from the base substrate; the formation of the translucent inorganic protective layer involves the formation of a multitude of translucent inorganic protective blocks; a respective translucent inorganic protective block of the multitude of translucent inorganic protective blocks lies in a respective subpixel area; and The first impurity doping is carried out using the multitude of translucent inorganic protective blocks as a mask plate. [22] Display substrate comprising an anode material layer extending at least partially over several subpixels; wherein the anode material layer comprises a first anode section at least partially in subpixel areas and a second anode section at least partially in an inter-subpixel area; the first anode section includes a doped anode impurity; the first anode section and the second anode section comprise at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section spacing adjacent subpixels apart; and the first anode section comprises an anode of the respective subpixel. [23] Display substrate according to claim 22, wherein the weight ratio of the doped anode impurity to the at least one common material in the second anode section is substantially zero. [24] Display substrate according to claim 22, wherein the first anode section and the second anode section comprise at least one common semiconductor material; the first anode section has a higher conductivity than the second anode section; and a difference between a highest occupied molecular orbital level of the second anode section and a highest occupied molecular orbital level of a functional material layer in direct contact with the second anode section is greater than a difference between a highest occupied molecular orbital level of the first anode section and a highest occupied molecular orbital level of the functional material layer in direct contact with the first anode section. [25] Display substrate according to claim 22, wherein the first anode section and the second anode section comprise at least one common metal oxide material. [26] Display substrate according to claim 22, wherein the doped impurity or the doped anode impurity comprises at least one of boron, fluorine, argon, phosphorus, hydrogen, helium, neon, nitrogen, arsenic, antimony, aluminum, magnesium or silicon. [27] Display substrate according to claim 22, further comprising a plurality of functional material layers extending at least partially over several subpixels; wherein the multitude of functional material layers comprise a first section in the inter-subpixel area and a second section in the subpixel areas; the first section contains a doped impurity; the first section and the second section must include at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; The first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of a respective subpixel. [28] Display substrate according to claim 27, wherein the weight ratio of the doped impurity to the at least one common functional material in the first section is greater than the weight ratio of the doped impurity to the at least one common functional material in the second section. [29] Display substrate according to claim 27, wherein the weight ratio of the doped impurity to the at least one common functional material in the second section is substantially zero in at least one of a hole transport layer, a hole injection layer, an electron transport layer or an electron injection layer. [30] Display substrate according to claim 27, wherein an orthographic projection of the second anode section onto a base substrate overlaps at least partially with an orthographic projection of the first section onto the base substrate; and an orthographic projection of the first anode section on the base substrate overlaps at least partially with an orthographic projection of the second section on the base substrate. [31] Display substrate according to claim 27, further comprising a pixel definition layer; wherein the pixel definition layer comprises a plurality of interpixel functional material layers doped with impurities; and the multitude of interpixel functional material layers in the pixel definition layer are unable to emit light. [32] Display substrate according to claim 27, wherein the plurality of functional material layers comprise a stacked structure comprising a light-emitting layer, a hole-transporting layer, a hole-injection layer, an electron-transporting layer and an electron-injection layer; and each of the light-emitting layer, hole-transporting layer, hole-injection layer, electron-transporting layer and electron-injection layer comprises a section with the doped impurity. [33] Display substrate according to claim 27, comprising a plurality of first functional material layers extending at least partially over several subpixels of a first color, a plurality of second functional material layers extending at least partially over several subpixels of a second color, and a plurality of third functional material layers extending at least partially over several subpixels of a third color; wherein the plurality of first functional material layers comprise a first stacked structure comprising a light-emitting layer of a first color, a hole transport layer, a hole injection layer, an electron transport layer and an electron injection layer; Each of the light-emitting layer of the first color, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity; the multitude of second functional material layers comprise a second stacked structure comprising a second color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; Each of the second color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity; the multitude of second functional material layers comprise a third stacked structure comprising a third-color light-emitting layer, a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; and Each of the third color light-emitting layer, the hole transport layer, the hole injection layer, the electron transport layer and the electron injection layer includes a section with the doped impurity. [34] Display substrate according to claim 27, wherein the display substrate is a light-emitting display substrate; the multiple functional material layers comprise a stacked structure that includes a first light-emitting layer and a second light-emitting layer of the same color; and Each of the first light-emitting layer and the second light-emitting layer includes a section containing the doped impurity. [35] Display substrate according to claim 27, wherein the display substrate is a white light-emitting display substrate; the multiple functional material layers comprise a stacked structure that includes a light-emitting layer of a first color, a light-emitting layer of a second color, and a light-emitting layer of a third color; and Each of the light-emitting layer of the first color, the light-emitting layer of the second color, and the light-emitting layer of the third color comprises a section containing the doped impurity. [36] Display substrate according to claim 22, further comprising a second anode material layer on a side of the anode material layer that is closer to a transistor substrate; wherein the second anode material layer comprises at least one metallic material. [37] Display substrate according to claim 36, further comprising an etch stop layer on a side of the second anode material layer away from the anode material layer. [38] Display substrate according to claim 22, further comprising: an encapsulation layer on a side of a plurality of functional material layers remote from a base substrate, which encapsulates the plurality of functional material layers; and a translucent inorganic protective layer on one side of the encapsulation layer away from the base substrate; wherein the translucent inorganic protective layer comprises a plurality of translucent inorganic protective blocks; and Each of the many translucent inorganic protective blocks is located in a respective subpixel area. [39] Display device comprising the display substrate according to any one of claims 22 to 38 and one or more integrated circuits connected to the display substrate. [40] Method for producing an indicator substrate, comprising: Forming an initial anode material layer that extends at least partially over several subpixels; and Performing a second impurity doping on the initial anode material layer to form an anode material layer that includes a first anode section at least partially in subpixel regions and a second anode section at least partially in an inter-subpixel region; wherein the first anode section comprises a doped anode impurity; the first anode section and the second anode section comprise at least one common material; a weight percentage of the doped anode impurity in the first anode section is higher than a weight percentage of the doped anode impurity in the second section; a weight ratio of the doped anode impurity to the at least one common material in the first anode section is higher than a weight ratio of the doped anode impurity to the at least one common material in the second anode section; the second anode section spacing adjacent subpixels apart; and the first anode section comprises an anode of a respective subpixel. [41] The method of claim 40, further comprising: Forming a multitude of initial functional material layers that extend at least partially across multiple subpixels; and Performing an initial impurity doping on the multitude of initial functional material layers to form a multitude of functional material layers comprising a first section in the inter-subpixel region and a second section in the subpixel regions; the first section comprises a doped impurity; the first section and the second section must include at least one common functional material; a weight percentage of the doped impurity in the first section is higher than a weight percentage of the doped impurity in the second section; a weight ratio of the doped impurity to the at least one common functional material in the first section is higher than a weight ratio of the doped impurity to the at least one common functional material in the second section; The first section spaced adjacent subpixels apart; and the second section comprises a light-emitting layer of the respective subpixel. [42] The method of claim 40, further comprising: Forming an encapsulation layer on a side remote from a base substrate of a plurality of initial functional material layers, which encapsulates the plurality of initial functional material layers; and Formation of a translucent inorganic protective layer on a side of the encapsulation layer furthest from the base substrate; the formation of the translucent inorganic protective layer involves the formation of a multitude of translucent inorganic protective blocks; a respective translucent inorganic protective block of the multitude of translucent inorganic protective blocks in a respective subpixel area; and The first impurity doping is carried out using the multitude of translucent inorganic protective blocks as a mask plate.

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