Spinel-ferrite-based device for quantum optical signal processing, spin-based quantum computing and applications in the field of artificial intelligence

Abstract

A spinel ferrite-based component for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications, consisting of: a) an electrically insulating substrate; b) a functional ferrite layer deposited on the electrically insulating substrate, wherein the functional ferrite layer consists of defect-modified spinel ferrite material of the composition NiFe 2-x Y x O4 with x=0.02 with controlled lattice distortion and defect density exists; c) a metallic source electrode structured on the functional ferrite layer; and d) a metallic drain electrode structured on the functional ferrite layer, wherein the metallic source electrode and the metallic drain electrode form an active device channel that supports electrical excitation, optical interaction and magnetic modulation.

Description

AREA OF INVENTION

[0001] The present disclosure relates to a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing, and applications in the field of artificial intelligence. The device is made from defect-modified NiFe 2-x Y x O4 (X=0.002) manufactured. Pinel ferrite material, produced by a controlled manufacturing process that allows precise adjustment of lattice defects, spin dynamics and electronic transport properties. BACKGROUND OF THE INVENTION

[0002] Recent advances in quantum technology and artificial intelligence have increased the demand for multifunctional solid-state devices that simultaneously enable optical signal processing, spin-based information processing, and adaptive electrical behavior. However, integrating these three areas into a single device architecture remains a significant technological challenge.

[0003] Conventional quantum optical materials, such as color quantum centers in diamond, rare-earth doped crystals, and semiconductor quantum dots, offer excellent optical properties but have limitations regarding scalability, fabrication complexity, and integration with electronic or magnetic functionalities. Spin-based quantum computing platforms typically require highly specialized materials that necessitate extremely low temperatures, complex fabrication processes, or the control of individual defects, thus limiting their practical applicability. Artificial intelligence, on the other hand, is predominantly implemented using CMOS-based architectures, which struggle to efficiently emulate brain-like adaptive behavior and lack direct compatibility with quantum or spin-based functionalities.

[0004] Spinel ferrites have proven to be promising multifunctional materials due to their robust crystal structure and tunable properties. Cation distribution, intrinsic magnetic order, and semiconductor properties characterize spinel ferrites. Defect-modified spinel ferrites can exhibit localized electronic states that enable optical absorption processes, controllable spin states via magnetic or electric fields, and demonstrate nonlinear electrical behavior with memory effects. Despite these advantages, previous research has focused primarily on isolated material properties, neglecting their potential as integrated device platforms for quantum and AI applications.

[0005] There is a significant gap in the development of devices that utilize controlled defect chemistry to enable spin-photon coupling, low-energy spin manipulation, and history-dependent electrical behavior in a unified architecture. Current approaches treat quantum optics, quantum computing, and artificial intelligence as separate technology fields, resulting in fragmented device architectures and increased system complexity.

[0006] Therefore, there is a clear need for a manufactured device that integrates defect-modified magnetic semiconductors to operate at the interface of quantum optical signal processing, spin-based quantum information processing, and artificial intelligence applications within a single scalable platform. SUMMARY OF THE INVENTION

[0007] The present disclosure relates to a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing, and applications in the field of artificial intelligence. The device is made of defect-modified NiFe 2-x Y xO4 (X=0.002) is fabricated. The pinel ferrite material is produced through a controlled fabrication process that allows for precise tuning of lattice defects, spin dynamics, and electronic transport properties. The substitution of octahedral lattice sites with rare-earth elements induces controlled lattice distortions, microstresses, and defect states. This allows optical absorption, spin-phonon coupling, and charge transfer behavior to be modulated at the device level. The fabricated device exhibits optically responsive defect states suitable for spin-photon interaction, reduced magnetic anisotropy enabling low-energy spin manipulation, and nonlinear electrical behavior with fast charge transfer kinetics.These combined properties support the modulation of quantum optical signals, stable spin state control for quantum information processing, and adaptive electrical behavior, analogous to artificial intelligence systems and neuromorphic computers. The device architecture enables the integration of planar electrodes and exhibits operational stability under repeated electrical and magnetic stress. By correlating fabrication-controlled defect chemistry with optical, magnetic, and electrical device responses, the presented spinel ferrite device offers a multifunctional hardware platform suitable for integration into quantum-based optoelectronic systems, spin-based computer architectures, and artificial intelligence hardware.The invention offers scalable manufacturing, material adaptation and multifunctionality, thus enabling the practical implementation of quantum and AI-oriented solid-state devices.

[0008] The present disclosure relates to a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications. The device comprises: a) an electrically insulating substrate; b) a functional ferrite layer deposited on the electrically insulating substrate, wherein the functional ferrite layer consists of defect-modified spinel ferrite material of the composition NiFe x Y xO4 with x = 0.02 with controlled lattice distortion and defect density; c) a metallic source electrode structured on the functional ferrite layer; and d) a metallic drain electrode structured on the functional ferrite layer, wherein the metallic source electrode and the metallic drain electrode form an active device channel enabling electrical excitation, optical interaction, and magnetic modulation.

[0009] One objective of the present disclosure is to provide a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computers and applications in the field of artificial intelligence.

[0010] Another objective of the invention is to provide a manufactured, spinel ferrite-based component that integrates quantum optical signal processing, spin-based quantum computers and artificial intelligence functionalities in a unified solid-state platform.

[0011] Another objective of the invention is to provide a device made from defect-modified NiFe 2-x Y x O4 spinel ferrite material consists of optically reactive defect states, reduced magnetic anisotropy and a nonlinear electrical response suitable for multifunctional operation.

[0012] Another objective of the invention is to provide a scalable device architecture consisting of a functional ferrite layer on an insulating substrate with structured metal electrodes that enable simultaneous electrical excitation, optical interaction and magnetic modulation.

[0013] Another objective of the invention is to provide a device that exhibits operational stability under repeated electrical and magnetic stress, thereby enabling practical integration into quantum-based optoelectronic systems, spin-based computer architectures, and hardware for artificial intelligence.

[0014] To further clarify the advantages and features of the present disclosure, the invention is described in more detail with reference to specific embodiments illustrated in the accompanying drawings. It is understood that these drawings merely show typical embodiments of the invention and are therefore not to be understood as limiting its scope of protection. The invention is described and explained in more detail and with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE IMAGES

[0015] These and other features, aspects and advantages of the present disclosure will be better understood when the following detailed description is read with reference to the accompanying drawings, in which identical symbols represent identical parts, wherein: Fig. Figure 1 illustrates a block diagram of a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications according to an embodiment of the present disclosure; and Fig. Figure 2 shows the graphical representation of the magnetic properties of the proposed device according to an embodiment of the present disclosure.

[0016] Furthermore, those skilled in the art will recognize that the elements in the drawings are simplified and not necessarily drawn to scale. For example, the flowcharts illustrate the process by highlighting the main steps to facilitate understanding of this disclosure. With regard to the construction of the device, one or more components may be represented in the drawings by conventional symbols. The drawings may show only those specific details relevant to understanding the embodiments of this disclosure, so as not to clutter the drawings with details that are already apparent to those skilled in the art from the description contained herein. DETAILED DESCRIPTION:

[0017] To facilitate understanding of the principles of the invention, reference is made below to the embodiment illustrated in the drawings, which is described using specific terms. It is understood, however, that this does not limit the scope of protection of the invention. Rather, modifications and further developments of the illustrated system, as well as further applications of the inventive principles depicted therein, are conceivable, insofar as they would typically occur to a person skilled in the art in the field of the invention.

[0018] It will be clear to those skilled in the art that the foregoing general description and the following detailed description are exemplary and explanatory of the invention and are not to be understood as a limitation thereof.

[0019] References to “an aspect”, “another aspect”, or similar phrases in this description mean that a particular feature, structure, or property described in connection with the embodiment is included in at least one embodiment of the present disclosure. Therefore, phrases such as “in one embodiment”, “in another embodiment”, and similar expressions in this description may, but do not necessarily, all refer to the same embodiment.

[0020] The terms "includes," "comprehensive," or similar expressions denote non-exclusive inclusion. Thus, a procedure or method containing a list of steps does not only include those steps but may also include further steps not explicitly listed or inherent in the procedure or method. Likewise, the statement "includes..." for one or more devices, subsystems, elements, structures, or components, without further limitations, does not preclude the existence of other devices, subsystems, elements, structures, or components.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meanings generally known to those skilled in the art in the field to which this invention belongs. The systems, methods, and examples described herein serve only for illustration and are not to be understood as limiting.

[0022] Embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0023] Fig. Figure 1 shows a block diagram of a spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing and artificial intelligence applications according to an embodiment of the present disclosure.

[0024] The component according to Fig. 1 comprises: a) an electrically insulating substrate (102); b) a functional ferrite layer (104) deposited on the electrically insulating substrate (102), wherein the functional ferrite layer (104) is made of defect-modified spinel ferrite material of composition NiFe 2-x Y xO4 with x = 0.02 with controlled lattice distortion and defect density; c) a metallic source electrode (106) structured on the functional ferrite layer (104); and d) a metallic drain electrode (108) structured on the functional ferrite layer (104), wherein the metallic source electrode (106) and the metallic drain electrode (108) form an active channel enabling electrical excitation, optical interaction and magnetic modulation.

[0025] In one embodiment, the electrically insulating substrate (102) is selected from the group consisting of glass, quartz and oxidized silicon.

[0026] In one embodiment, the defect-modified spinel ferrite material comprises a substitution of rare earth elements at octahedral lattice sites, which induces a controlled lattice distortion, microstress and defect states.

[0027] In one embodiment, the metallic source electrode (106) and the metallic drain electrode (108) consist of a material selected from the group consisting of gold, platinum, silver and conductive carbon.

[0028] In one embodiment, the functional ferrite layer (104) has optically responsive defect states suitable for spin-photon interaction, reduced magnetic anisotropy enabling spin manipulation at low energies, and a nonlinear electrical response with fast charge transfer kinetics.

[0029] In one embodiment, the functional ferrite layer (104) comprises a single-phase cubic spinel structure with a uniform doping distribution and reproducible defect density.

[0030] In one embodiment, the functional ferrite layer (104) exhibits high operational stability under repeated electrical and magnetic stress.

[0031] In one embodiment, the active device channel enables defect-assisted optical absorption, spin dynamics, and charge transport.

[0032] In one embodiment, the metallic source electrode (106) and the metallic drain electrode (108) are optimized with respect to electrode spacing and thickness in such a way as to improve the charge transfer kinetics and the nonlinear electrical response.

[0033] In one embodiment, the device is configured for integration into quantum-capable optoelectronic systems, spin-based computer architectures, and hardware for artificial intelligence.

[0034] The present invention relates to a fabricated device based on spinel ferrite for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications. The device comprises an electrically insulating substrate, a functional ferrite layer deposited thereon, and structured metallic source and drain electrodes on the ferrite layer for defining an active channel. The functional ferrite layer consists of defect-modified NiFe 2-x Y xO4 (x = 0.02) spinel ferrite material with controlled lattice distortion and defect density, achieved by substituting rare-earth elements at octahedral lattice sites. This defect modification induces controlled lattice distortions, microvoltages, and localized electronic states, enabling modulation of optical absorption, spin-phonon coupling, and charge transfer behavior. The device exhibits optically responsive defect states suitable for spin-photon interaction, reduced magnetic anisotropy allowing spin manipulation at low energies, and a nonlinear electrical response with fast charge transfer kinetics. The active device channel enables simultaneous electrical excitation, optical interaction, and magnetic modulation, thus facilitating multifunctional applications in quantum optics, spin-based quantum computing, and artificial intelligence.The device demonstrates operational stability under repeated charge / discharge cycles and offers a scalable platform for integration into quantum and AI-oriented solid-state systems.

[0035] In one embodiment, the spinel ferrite device is designed to integrate defect-modified magnetic semiconductors into a planar device architecture that enables optical, magnetic, and electrical functions. The fabrication process begins with the production of a homogeneous precursor solution containing stoichiometric amounts of nickel, iron, and rare-earth salts to achieve the desired NiFe composition. 2-x Y xTo achieve O4, the precursor salts are dissolved in deionized water under continuous stirring to ensure thorough mixing at the molecular level. A binary system of urea and glucose controls the combustion temperature, gas evolution rate, and defect formation during synthesis. Citric acid is added as a chelating agent to stabilize metal ions and prevent premature precipitation. The pH of the solution is adjusted to near neutral to promote uniform gelation. The solution is gradually heated until a viscous gel forms, which is then thermally combusted in a preheated oven. Rapid redox reactions occur during combustion, releasing gases that form a highly porous ferrite matrix, crucial for the targeted generation of lattice defects, oxygen vacancies, and microstresses.These properties later determine the spin-phonon coupling and charge transport behavior. The resulting ash is calcined at elevated temperature to obtain a single-phase cubic spinel ferrite with a uniform doping distribution and reproducible defect density. The calcined powder is finely milled to ensure a uniform particle size and consistent electrical conductivity in the finished device.

[0036] For device fabrication, the synthesized spinel ferrite powder is dispersed in a suitable solvent to obtain a stable suspension or ink. This dispersion is applied to an electrically insulating substrate such as glass, quartz, or oxidized silicon using processes like drop coating, spin coating, or screen printing. The deposited layer is dried and annealed to improve adhesion, particle bonding, and mechanical stability. This annealing process also activates defect states and improves the electrical pathways between the ferrite grains. This results in a continuous functional layer that serves as the active zone of the device. Subsequently, metallic source and drain electrodes are patterned onto the ferrite layer by thermal evaporation, sputtering, or the application of conductive pastes.Precious metals or conductive carbon materials are selected to ensure low contact resistance and chemical stability. The geometry of the electrodes defines the length and width of the active channel and thus directly influences charge transport, the nonlinear electrical behavior, and the sensitivity of the device. The electrical contacts are carefully aligned to enable uniform current flow through the defect-modified ferrite layer. The finished device allows simultaneous optical, electrical, and magnetic interaction. Optical excitation is achieved by a focused light source directed onto the ferrite layer, enabling interaction with defect-mediated electronic states and spin-photon coupling.An electrical bias applied to the electrodes drives charge transport through the active layer, while an applied magnetic field modulates the spin orientation and magnetic anisotropy. The interplay of these stimuli enables the device to operate in regions relevant for quantum optical signal processing, spin-based information processing, and adaptive electrical response. The fabrication process ensures that defect density, lattice distortion, and spin dynamics are determined by controlled synthesis and annealing conditions, rather than by random disorder. This controlled fabrication approach enables reproducible device performance, scalability, and compatibility with existing electronic and optoelectronic systems.The resulting spinel-ferrite device exhibits optically addressable defect states, adjustable spin behavior, and nonlinear charge transport with memory effects, making it suitable for integration into quantum-inspired computer architectures and hardware platforms for artificial intelligence.

[0037] X-ray diffraction analysis was used to determine the structural integrity and defect-controlled lattice properties of the fabricated spinel ferrite device material, as these parameters directly influence spin dynamics, optical transitions, and charge transport, which are essential for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications. The diffraction patterns of the fabricated NiFe 2-x Y xO4 spinel ferrite layers (0 ≤ x ≤ 0.02) confirm the formation of a single-phase cubic spinel structure with the space group Fd-3m. All observed diffraction peaks can be assigned to the characteristic crystallographic planes of spinel ferrites, namely (111), (220), (311), (222), (400), (422), (511), and (440). The (311) reflection shows the highest intensity across all compositions, indicating preserved crystallographic order during device fabrication. The absence of secondary phases associated with Fe2O3, NiO, or Y2O3 confirms that the incorporation of the rare-earth metals occurs within the spinel lattice and not through phase segregation. This is crucial for consistent device performance and reproducible quantum and AI-relevant functionality.This phase purity is essential to maintain coherent spin environments and minimize parasitic scattering centers that could impair spin-photon coupling or cause instabilities in adaptive electronic behavior.

[0038] With increasing Y 3+ With increasing n-content, the structure of the main diffraction peaks shifts systematically to lower diffraction angles. This peak shift indicates a controlled expansion of the unit cell, achieved through the incorporation of larger Y-cells. 3+ -ions (ionic radius ≈ 0.90 Å) on octahedral Fe 3+The position (ionic radius ≈ 0.645 Å) is determined by the monotonic increase in the lattice parameter and the unit cell volume, demonstrating that the defect manipulation is achieved through uniform lattice distortion and not through random structural disturbances. This controlled lattice expansion is important for the operation of devices because it alters the metal-oxygen bond lengths and angles, thereby influencing the spin-phonon coupling strength and optically active defect states relevant for quantum optical signal modulation. Calculations of the crystallite size show a progressive decrease in the mean crystallite dimension with increasing Y-substitution. This reduction is attributed to the stress-induced inhibition of grain growth during fabrication, caused by ion mismatch and defect accumulation in the crystal lattice.The presence of smaller crystallites increases the density of grain boundaries and defect states, which play a crucial role in nonlinear charge transport, storage effects, and adaptive electrical responses—properties fundamental to artificial intelligence and neuromorphic device behavior. Microstress analysis reveals a systematic increase in lattice stress with Y-incorporation, confirming the targeted introduction of elastic strains into the spinel framework. These stress fields act as local disturbances in the electronic and magnetic environment, enabling tunable spin disorder and reducing magnetocrystalline anisotropy. From a device perspective, this stress-induced softening of the magnetic lattice lowers the energy barrier for spin reorientation, thus supporting the low-energy spin manipulation required for spin-based quantum computing architectures.The increase in dislocation density with defect concentration further confirms the formation of a defect-rich lattice, optimized through manufacturing control. These dislocations and point defects contribute to localized electronic states within the band structure, thereby enhancing optical absorption and enabling defect-mediated spin-photon interactions. Simultaneously, they provide additional conduction pathways that improve charge transfer kinetics and support the fast, nonlinear electrical response essential for AI-driven signal processing.

[0039] The device consists of defect-modified spinel ferrite material with the nominal composition NiFe 2-x Y xO4 (x = 0.02), synthesized by solution combustion to ensure homogeneous dopant distribution and controlled defect formation, is prepared from stoichiometric amounts of nickel nitrate, iron nitrate, and yttrium nitrate in deionized water. An organic fuel of urea and glucose regulates the combustion temperature and gas evolution dynamics, while citric acid, acting as a chelating agent, ensures uniform cation mixing at the molecular level. The pH of the solution is maintained in the neutral range to promote stable gel formation. The precursor solution forms a viscous gel under continuous stirring and heating, which is then burned in a preheated furnace to yield porous ferrite ash. The resulting powder is calcined at elevated temperature to obtain a single-phase cubic spinel structure with controlled lattice distortion and defect density.This material exhibits defect-mediated electronic states and spin-phonon coupling, which are necessary for the operation of quantum optical and spin-based devices.

[0040] Fig. Figure 2 shows the graphical representation of the magnetic properties of the proposed device according to an embodiment of the present disclosure.

[0041] Fig. 2 (a) shows the magnetic hysteresis loops of NiFe 2-x Y x O4 Measured at high field, Fig. 2 (b) represents the hysteresis loop at low field, Fig. 2 (c) represents the magnetization as a function of (1 / H 2 ) to determine the saturation magnetization from the saturation law, Fig. 2 (d) represents the normalized hysteresis loop. NiFe 2-x Y x O4. and Fig. 2 (e)-(i) Magnetizing dispersion for the NiFe 2-x Y x O4.

[0042] The device exhibits soft magnetic properties characteristic of spinel ferrites with low coercivity and moderate remanence. The magnetic behavior shows a systematic evolution with increasing yttrium substitution. The coercivity decreases progressively from 183.3 Oe for the undoped material to 162.9 Oe for the composition x = 0.02. The remanent magnetization decreases analogously from 9.77 emu / g to 7.99 emu / g with increasing yttrium content. This reduction indicates weakened magnetocrystalline anisotropy and a reduced number of effective pinning sites, thus facilitating easier magnetization reversal—a crucial aspect for spin manipulation in the low-energy range.

[0043] The high-field magnetization behavior: Analysis using the saturation law shows a continuous decrease in both the saturation magnetization and the anisotropy constant with increasing yttrium doping. The replacement of magnetic Fe 3+ -ions through non-magnetic Y 3+ -Iions on octahedral B sites dilute the magnetic sublattice and induce a spin tilt, thereby increasing the Fe 3+ -O-Fe 3+ - and Fe 3+ -O-Ni 2+ Superexchange interactions are weakened. The reduced anisotropy lowers the energy barrier for magnetization reversal and thus directly explains the observed reduction in coercive field strength.

[0044] The normalized hysteresis loops show a continuous decrease in the squareness ratio, indicating reduced coherent spin rotation and an increased contribution from domain wall motion. Spin tilting decreases due to the introduction of non-magnetic Y. 3+ This disrupts the collinear ferrimagnetic long-range order and reduces the magnetic order at zero field. The decreasing squareness ratio reflects a weakening of the dipole and exchange interactions between the particles, as well as a reduction in the AB-site exchange integral.

[0045] The behavior of the magnetization dispersion corresponds to the random anisotropy model. This shows that the exchange stiffness constant decreases with increasing yttrium doping, as the Fe-O-Fe and Fe-O-Ni superexchange pathways are weakened. The resulting greater exchange length leads to a more uniform magnetization dispersion, which is consistent with the flatter curvature and lower slope observed in the yttrium-doped samples. Domain-related parameters, including the critical single-domain diameter, the Langevin radius, and the reversible field, are influenced by the interplay of anisotropy, exchange energy, and particle size. Yttrium doping causes the device to be rotationally dominated rather than wall-motion dominated.

[0046] The collective effects of reduced saturation magnetization, reduced effective anisotropy constant, reduced exchange stiffness, and reduced remanent magnetization show that the ferrite device becomes increasingly softer with increasing yttrium content. This magnetic softening is confirmed by a continuous decrease in coercive field strength and a smoother approach to saturation under applied field. The magnetic behavior correlates completely with the structural changes observed by X-ray diffraction, including lattice expansion, increased microstress, and reduced crystallite size, which together increase spin tilt and decrease anisotropy. The lattice softening confirmed by infrared spectroscopy and the reduced band gap indicated by UV-Vis spectroscopy favor increased carrier-mediated spin disorder.This coherent relationship between structural, electronic and magnetic properties explains the progressive magnetic softening of the component through yttrium doping.

[0047] In one embodiment, the device comprises the manufactured spinel ferrite powder, which is processed into a functional layer and deposited onto an electrically insulating substrate of glass, quartz, or oxidized silicon. Drop coating, screen printing, or spin coating are used as deposition techniques. The deposited ferrite layer is annealed to improve adhesion, cross-linking between particles, and electrical stability. This creates the functional core zone where defect-induced optical absorption, spin dynamics, and charge transport take place. Planar metal electrodes made of gold, platinum, silver, or conductive carbon are structured onto the ferrite layer by thermal evaporation, sputtering, or conductive pastes. The electrode configuration defines an active channel that enables electrical excitation, optical interaction, and magnetic modulation.Electrode spacing and thickness are optimized to improve charge transfer kinetics and nonlinear electrical response.

[0048] The spinel ferrite layer in the device serves as a multifunctional medium in which optically addressable defect states enable the modulation of quantum optical signals, while the reduced magnetic anisotropy allows for low-energy spin manipulation suitable for spin-based quantum computing. Simultaneously, defect-mediated charge transport and a history-dependent electrical response enable adaptive behavior, analogous to elements of artificial intelligence and neuromorphic computers. The device architecture supports external optical excitation, electrical biasing, and magnetic field control, thus enabling multifunctional operation within a single integrated platform. The device's design ensures reproducibility, scalability, and compatibility with existing electronic and optoelectronic infrastructure, making it suitable for integration into hybrid quantum AI hardware architectures.

[0049] The present invention relates to a fabricated spinel ferrite device based on defect-modified NiFe 2-x Y x O4. This was successfully developed as a multifunctional solid-state platform that meets the combined requirements of quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications. A controlled fabrication strategy incorporating rare-earth substitution and solution combustion synthesis enabled precise tuning of lattice defects, microstresses, and crystallite size. This resulted in a structurally coherent, yet defect-rich, cubic spinel framework. X-ray diffraction analyses confirm single-phase formation with systematic lattice expansion and increased defect density. This provides a robust structural foundation essential for the reproducible functionality of the device. Targeted defect modification by Y3+Substitution plays a crucial role in the device's performance by modifying the metal-oxygen bonding environments, enhancing spin-phonon coupling, and generating localized electronic states within the band structure. These structural features support directly optically addressable defect states and controlled spin disorder, which are critical for spin-photon interaction and spin manipulation at low energies. The progressive reduction of magnetic anisotropy, coercive field strength, and exchange stiffness, demonstrated by hysteresis measurements, saturation analyses, and magnetization dispersion behavior, illustrates the development of magnetically soft ferrite devices with tunable spin dynamics. Such behavior is highly desirable for spin-based quantum information processing, as reduced energy barriers and reversible spin rotation are essential.From a device engineering perspective, the integration of the defect-modified ferrite layer with planar electrode architectures enables stable electrical excitation, optical interaction, and magnetic modulation on a single platform. The presence of nonlinear charge transport pathways and defect-supported conductivity supports adaptive, history-dependent electrical responses, analogous to elements of artificial intelligence and neuromorphic computing. Importantly, the fabrication methodology ensures scalability, reproducibility, and compatibility with existing electronic and optoelectronic systems, thereby overcoming significant limitations of conventional quantum optical and quantum computing materials, which are often based on complex or non-scalable fabrication processes.

[0050] The drawings and the preceding description illustrate embodiments. Those skilled in the art will recognize that one or more of the described elements can be combined to form a single functional element. Alternatively, certain elements can be divided into several functional elements. Elements of one embodiment can be added to another. For example, the process sequences described here can be modified and are not limited to the manner described herein. Furthermore, the actions of a flowchart need not be performed in the sequence shown; nor do all actions necessarily need to be carried out. Actions that do not depend on other actions can be performed in parallel with the other actions. The scope of protection of the embodiments is in no way limited by these specific examples. Numerous variations, whether explicitly stated in the description or not, such as...Differences in structure, dimensions, and materials are possible. The scope of protection of the embodiments is at least as comprehensive as described by the following claims.

[0051] The advantages, other benefits, and problem solutions have been described above with reference to specific embodiments. However, the advantages, benefits, problem solutions, and any components that can effect or enhance an advantage, benefit, or solution are not to be construed as critical, necessary, or essential features or components of the claims. REFERENCES 100 A spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing. 102 Electrically insulating substrate 104 Functional Ferrite Layer 106 Metallic source electrode 108 Metallic drain electrode

Claims

A spinel ferrite-based device for quantum optical signal processing, spin-based quantum computing, and artificial intelligence applications, comprising: a) an electrically insulating substrate; b) a functional ferrite layer deposited on the electrically insulating substrate, wherein the functional ferrite layer consists of defect-modified spinel ferrite material of the composition NiFe2-xYxO4 with x=0.02 with controlled lattice distortion and defect density; c) a metallic source electrode structured on the functional ferrite layer; and d) a metallic drain electrode structured on the functional ferrite layer, wherein the metallic source electrode and the metallic drain electrode form an active device channel supporting electrical excitation, optical interaction, and magnetic modulation. Device according to claim 1, wherein the electrically insulating substrate is selected from the group consisting of glass, quartz and oxidized silicon. Device according to claim 1, wherein the defect-modified spinel ferrite material has a rare earth substitution at octahedral lattice sites inducing a controlled lattice distortion, microstress and defect states. Device according to claim 1, wherein the metallic source electrode and the metallic drain electrode are made of a material selected from the group consisting of gold, platinum, silver and conductive carbon. Device according to claim 1, wherein the functional ferrite layer has optically responsive defect states suitable for spin-photon interaction, reduced magnetic anisotropy enabling spin manipulation at low energies, and a nonlinear electrical response with fast charge transfer kinetics. Device according to claim 1, wherein the functional ferrite layer has a single-phase cubic spinel structure with uniform doping distribution and reproducible defect density. Device according to claim 1, wherein the functional ferrite layer exhibits operational stability under repeated electrical and magnetic stress. Device according to claim 1, wherein the active device channel enables defect-assisted optical absorption, spin dynamics and charge transport. Device according to claim 1, wherein the metallic source electrode and the metallic drain electrode have an electrode spacing and thickness optimized to improve charge transfer kinetics and nonlinear electrical response. Device according to claim 1, wherein the device is configured for integration into quantum-capable optoelectronic systems, spin-based computer architectures and hardware for artificial intelligence.

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