SLUFF COMPOSITION FOR POLISHING A SILICON OXIDE FILM AND POLISHING PROCESS THEREBY
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- YOUNG CHANG CHEMICAL CO LTD
- Filing Date
- 2020-03-02
- Publication Date
- 2026-06-03
AI Technical Summary
Existing CMP slurries face challenges in simultaneously polishing multiple film types like silicon oxide, silicon nitride, and polysilicon with high selectivity and minimizing defects such as scratches, while requiring frequent slurry changes for different films, which affects throughput and electrical properties of semiconductor devices.
A CMP slurry composition using colloidal silica with a positive zeta potential (+10 to +70 mV) and additives like polyethylene glycol and heterocyclic compounds allows on-site adjustment of polishing selectivity among silicon oxide, silicon nitride, and polysilicon films, minimizing scratches and enabling continuous polishing without slurry changes.
The composition improves polishing performance and reliability by allowing high selectivity and reduced defects, enhancing semiconductor manufacturing efficiency by continuous polishing across film changes.