Laser activated transfer process for pre-lithiation and lithium metal anode manufacturing

Abstract

A method and apparatus for forming device stacks including alkali metal or alloy anodes and pre-lithiated anodes for energy storage devices are described herein. The method includes laminating an alkali metal or alloy layer to a flexible substrate stack. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate. The alkali metal or alloy layer is formed over a frontside of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The method further includes transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to the flexible substrate stack. The flexible substrate stack includes a current collector or a separator.

Description

LASER ACTIVATED TRANSFER PROCESS FOR PRE-LITHIATION AND LITHIUM METAL ANODE MANUFACTURINGTECHNICAL FIELD

[0001] The disclosure generally relates to an alkali metal containing devices and methods for manufacturing alkali metal containing devices. More particularly, the disclosure relates to device stacks including alkali metal or alloy anodes and pre- lithiated anodes for energy storage devices and a methods for manufacturing the same.BACKGROUND

[0002] Rechargeable electrochemical storage systems are currently becoming increasingly essential for many fields of everyday life. High-capacity electrochemical energy storage devices, such as lithium-ion (Li-ion) batteries, are used in a growing number of applications, including portable electronics, medical, transportation, grid- connected large energy storage, renewable energy storage, and uninterruptible power supply (UPS). Traditional lead / sulfuric acid batteries often lack the capacitance and are often inadequately cyclable for these growing applications. Lithium-ion batteries, however, are thought to provide the best solution.

[0003] Therefore, there is a need for methods and systems for the deposition and processing of alkali metal or alloys used in energy storage devices.SUMMARY

[0004] The disclosure generally relates to alkali metal containing devices and methods for manufacturing alkali metal containing devices. More particularly, the disclosure relates to device stacks including alkali metal containing anodes and pre- lithiated anodes for energy storage devices and a methods for manufacturing the same.

[0005] In one aspect, a method of forming a film stack for an energy storage device is provided. The method includes laminating an alkali metal or alloy layer to a flexible substrate stack. The alkali metal or alloy layer formed on a flexible support layer stack.The flexible support layer stack includes a polymer substrate. The alkali metal or alloy layer is formed over a frontside of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The method further includes transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to the flexible substrate stack. The flexible substrate stack includes a current collector or a separator.

[0006] Implementations may include one or more of the following. The one or more lasers is directed through a backside of the polymer substrate. Exposing portions of the alkali metal or alloy layer to the one or more lasers creates a void volume between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning the alkali metal or alloy layer. Laminating the alkali metal or alloy layer to the flexible substrate stack includes applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The flexible support layer stack further includes a release layer formed between the flexible support layer and the alkali metal or alloy layer. The release layer includes a polymer material that is capable of photoinduced depolymerization. The polymer substrate is a web-based polymer substrate and the current collector or the separator is a web-based substrate.

[0007] In another aspect, a method of forming a film stack for an energy storage device is provided. The method includes patterning an alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate and the alkali metal or alloy layer is formed over a frontside of the polymer substrate. The method further includes removing the exposed portions of the alkali metal or alloy layer by transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to a dummy substrate. Unexposed portions of the alkali metal or alloy layer form a patterned alkali metal or alloy layer. The method further includes laminating the patterned alkali metal or alloy layer to a flexible substrate stack. The flexible substrate stack includes a current collector or a separator. The method further includes separating the patterned alkali metal or alloy layer from the flexible support layer stack.

[0008] Implementations may include one or more of the following. The one or more lasers is directed through a backside of the polymer substrate. Exposing portions of the alkali metal or alloy layer to the one or more lasers creates a void volume between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning the alkali metal or alloy layer. Laminating the alkali metal or alloy layer to the flexible substrate stack comprises applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The flexible support layer stack further comprises a release layer formed between the flexible support layer and the alkali metal or alloy layer. The release layer includes a polymer material that is capable of photoinduced depolymerization. The polymer substrate is a web-based polymer substrate and the current collector or the separator is a web-based substrate.

[0009] In yet another aspect, a method of forming a film stack for an energy storage device is provided. The method includes laminating an alkali metal or alloy layer to a flexible substrate stack. The alkali metal or alloy layer is formed on a flexible support layer stack. The flexible support layer stack includes a polymer substrate. The alkali metal or alloy layer is formed over a frontside of the polymer substrate. The method further includes patterning the alkali metal or alloy layer by exposing portions of the alkali metal or alloy layer to one or more lasers while applying pressure to one or more of the flexible substrate stack and the flexible support layer stack. The method further includes transferring the exposed portions of the alkali metal or alloy layer from the flexible support layer stack to the flexible substrate stack, the flexible substrate stack comprising a current collector or a separator.

[0010] Implementations may include one or more of the following. The one or more lasers is directed through a backside of the polymer substrate. Exposing portions of the alkali metal or alloy layer to the one or more lasers creates a void volume between the alkali metal or alloy layer and the flexible support layer stack. The method further includes heating the alkali metal or alloy layer prior to patterning the alkali metal or alloy layer.

[0011] In another aspect, a non-transitory computer readable medium has stored thereon instructions, which, when executed by a processor, causes the process to perform operations of the above apparatus and / or method.BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above-recited features of the present disclosure can be understood in detail, a more particular description of the aspects, briefly summarized above, may be had by reference to implementations, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical implementations of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective implementations.

[0013] FIG. 1 illustrates a flowchart showing selected operations of a method of forming an energy storage device in accordance with one or more implementations of the present disclosure.

[0014] FIGS. 2A-2G illustrates views of various stages of manufacturing an energy storage device according to the method of FIG. 1 in accordance with one or more implementations of the present disclosure.

[0015] FIG. 3 illustrates a flowchart showing selected operations of another method of forming an energy storage device in accordance with one or more implementations of the present disclosure.

[0016] FIGS. 4A-4G illustrate views of various stages of manufacturing an energy storage device according to the method of FIG. 3 in accordance with one or more implementations of the present disclosure.

[0017] FIG. 5 illustrates a flowchart showing selected operations of yet another method of forming an energy storage device in accordance with one or more implementations of the present disclosure.

[0018] FIGS. 6A-6E illustrate views of various stages of manufacturing an energy storage device according to the method of FIG. 5 in accordance with one or more implementations of the present disclosure.

[0019] FIG. 7 illustrates a schematic view of a flexible substrate coating apparatus in accordance with one or more implementations of the present disclosure.

[0020] FIG. 8 illustrates a schematic view of a lamination transfer apparatus in accordance with one or more implementations of the present disclosure.

[0021] FIG. 9A illustrates a schematic side view of a lamination apparatus in accordance with one or more implementations of the present disclosure.

[0022] FIG. 9B is an image of one example of a lamination apparatus in accordance with one or more implementations of the present disclosure.

[0023] FIG. 10 is an image of a lithium pattern transferred onto a graphite anode in accordance with one or implementations of the present disclosure.

[0024] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one implementation may be beneficially incorporated in other implementations without further recitation.DETAILED DESCRIPTION

[0025] The disclosure generally relates to alkali metal containing devices and methods for manufacturing alkali metal containing devices. More particularly, the disclosure relates to device stacks including alkali metal or alloy anodes and pre- lithiated anodes for energy storage devices and a methods for manufacturing the same.

[0026] Substrate independent direct transfer (SIDT) is a method for forming anode device stacks by transferring one or more layers including an alkali metal layer or an alkali metal containing layer, for example, an alkali metal or alloy layer, to a substrate stack, for example, a current collector in implementations where the alkali metal or alloy functions as an anode or for pre-lithiating an anode material which is already formed on the current collector. The alkali metal or alloy includes an alkali metal, for example, lithium metal, sodium, potassium, rubidium, cesium, francium, an alloy including the alkali metal, or a combination thereof. The already formed anodematerial can include or be, but is not limited to, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, tin, hard carbon, metal oxide, or combinations thereof. The current collector can include or be metalized plastic, copper, or combinations thereof. In SIDT processes, lithium is formed over a flexible support layer stack composed of one or more materials such as a polymer substrate, for example, polyethylene terephthalate (PET), paper, or combinations thereof. The materials formed on the flexible support layer stack are directly transferred to a substrate stack. The substrate stack can include or be a current collector, a current collector having anode material formed thereover, a metallized plastic substrate, a separator, or a metallized plastic substrate having lithium formed thereover. A release layer, if present, formed between the alkali metal layer and the flexible support layer stack enables transferring lithium and other materials off of the support layer stack and onto the current collector or anode material if already present. The release layer can be selected from one or more of fluorocarbons, silicone, latex, AIOx, LiF, AIOOH, Ag, AgF, Bi, Zn, Mg, Sn, or metal halides.

[0027] However, transfer of the alkali metal or alloy layer from the flexible support layer stack onto a current collector or anode material can present several challenges. For example, following SIDT, materials such as trace amounts of release layer remain on a surface of the lithium of the formed film stack. Such release layer materials are typically not compatible with end uses such as electrochemical devices as the materials can impede ion or electronic transport. That is, the release layer chemistry may not be compatible with the end device (for example, an energy storage device). For example, unwanted reactions of the release layer with gases (for example, H2O, O2, N2, etc.) during handling, shipping, and subsequent integration can impact device integration. As a result, SIDT is not utilized in the battery and capacitor industries, among other industries, as such industries require high-quality alkali metal films that can be used for device integration.

[0028] In one or more implementations, which can be combined with other implementations, systems and methods for patterned Li transfer onto a substrate stack including one of more of Si-Gr, SiOx-Gr, Graphite anode, Cu substrate or metalized plastic substrate by utilizing a laser are provided. In one or more implementations, an IR fiber laser is used to activate PET-Li interface from the PET side and transferpatterned lithium onto the substrate stack. In one or more implementations, which can be combined with other implementations, a Li-compatible material such as a fluorocarbon is formed on alkali metal or alloy and exposed to a laser to form electrochemically stable Li-F, which functions as a surface protection layer.

[0029] In one or more implementations, which can be combined with other implementations, the laser activation process described can be incorporated into a roll-to-roll tool and used in a roll-to-roll process. The laser activation process enables transfer of patterned lithium from a plastic substrate onto a roll-to-roll battery anode substrate by exposing an interface between the alkali metal or alloy layer and the flexible support layer stack, for example, the Li-PET interface, to a laser which induces lithium transfer at the interface. This interface between the alkali metal or alloy layer and the flexible support layer stack may also include a release layer as described.

[0030] In one or more implementations, which can be combined with other implementations, the laser activation process enables the patterning of lithium. For example, the lithium can be patterned to match the pattern of the anode material in a pre-lithiation process, such as lane coating, skip coating, and also directly onto a current collector. Any suitable pattern may be achieved, for example, a square, a triangle, a circle, etc.

[0031] In one or more implementations, which can be combined with other implementations, the laser activation process can use a laser source to create an interface reaction with either a release layer, an interface layer, or both the release layer and the interface layer between the alkali metal or alloy layer and the flexible support layer, for example, PET, to (a) form an SEI layer in the electrode structure post-SIDT and / or (b) a Li surface protection layer for easy handling / shipping and integration of Li films in manufacturing environment.

[0032] In one or more implementation, which can be combined with other implementations, an IR fiber laser is used for laser activation and lift-off from a PET substrate with a lithium layer, for example, a 20 urn lithium layer, and a silicone release layer. In one example, the IR fiber laser is a 1060-nm laser with a pulse width of 5 to500 nanoseconds, for example, a 30 nanosecond pulse width, a Gaussian profile, ~150 urn spot size, 2 m / sec raster speed, and a line distance of 70 urn.

[0033] In one or more implementations, which can be combined with other implementations, a flexible support layer stack is provided. The flexible support layer stack can include a plastic containing substrate, for example, a polyethylene terephthalate (PET) substrate. The flexible support layer stack can further include a release layer, for example, silicone or other deposited release layers, formed on the flexible support layer stack. An alkali metal-containing layer, for example, an alkali metal or alloy layer is formed over the flexible support layer stack. In implementations where the release layer is not present, the alkali metal or alloy layer can be formed directly on the plastic containing substrate. In implementations where the release layer is present, the alkali metal or alloy layer can be formed directly on the release layer. The flexible support layer stack having the alkali metal or alloy layer formed thereon is exposed to a laser activation process. In one or more implementations, during the laser activation process, a laser is directed through the flexible support layer stack to activate the interface of the alkali metal or alloy layer and the flexible support layer stack, for example, the Li-PET interface. The laser can be directed through the backside of the flexible support layer stack, for example, from the plastic containing substrate or PET side. Exposure to the laser can induce a lithium transfer process creating a void volume between the alkali metal or alloy layer and the flexible support layer stack. This void volume can make separation of the alkali metal or alloy layer from the flexible support layer easier during transfer of the alkali metal or alloy layer from the flexible support layer stack to the current collector. In addition, precise laser beam position control enables the selective transfer of alkali metal or alloy into desired shapes from the flexible support layer stack to the substrate stack to form anode device stacks with various shapes. Further, exposure to the laser can be used to pattern the alkali metal or alloy layer such that a precise pattern of alkali metal or alloy is transferred from the flexible support layer stack to the substrate stack to form an anode device stack. A cathode structure and / or separator can be integrated with the formed anode device stack to form the energy storage device.

[0034] It is noted that while the particular substrate on which some implementations described herein can be practiced is not limited, it is particularly beneficial to practicethe implementations on flexible substrates, including for example, web-based substrates, panels and discrete sheets. The flexible substrate can also be in the form of a foil, a polymer film, or a thin plate.

[0035] It is also noted here that a flexible substrate or web as used within the implementations described herein can typically be characterized in that it is bendable. The term “web” can be synonymously used to the term “strip,” the term “flexible substrate,” or the term “flexible conductive substrate.” For example, the web as described in implementations herein can be a polymer material.

[0036] It is further noted that the methods and systems described may be used in forming single-sided electrode structures and double-sided electrode structures.

[0037] FIG. 1 illustrates a flow chart of a method 100 for manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. FIGS. 2A-2G illustrate views of various stages of manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. Although FIGS. 2A-2G are described in relation to the method 100, it will be appreciated that the structures disclosed in FIGS. 2A-2G are not limited to the method 100, but instead may stand alone as structures independent of the method 100. Similarly, although the method 100 is described in relation to FIGS. 2A-2G, it will be appreciated that the method 100 is not limited to the structures disclosed in FIGS. 2A-2G but instead may stand alone independent of the structures disclosed in FIGS. 2A-2G. It should be understood that FIGS. 2A-2G illustrate only partial schematic views of the energy storage device structure, and the energy storage device structure may contain any number of additional layers and / or additional materials common to energy storage devices, which are not shown for the sake of brevity. It should also be noted that although the method 100 illustrated in FIG. 1 is described sequentially, other process sequences that include one or more operations that have been omitted and / or added, and / or have been rearranged in another desirable order, fall within the scope of the implementations of the disclosure provided herein.

[0038] Referring to FIG. 2A, at operation 110 a flexible support layer stack 202 is provided. The flexible support layer stack 202 includes a flexible support layer 210.The flexible support layer 210 has a frontside 21 Of (also referred to as a front surface) and a backside 210b (also referred to as a back surface) opposite the frontside 21 Of. The flexible support layer 210 may comprise any suitable material that is compatible with the targeted processing conditions. In some implementations, the flexible support layer 210 includes a plurality of sub-layers. In one or more implementations, which can be combined with other implementations, the flexible support layer 210 can be or include, one or more layers selected from plastic, polymer materials, metallized plastic, metals, paper, multilayers thereof, or a combination thereof. Suitable polymer materials include polymer materials that are transparent to laser light and have low to no photon absorption to prevent overheating and fire incidents. Example of suitable polymer materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), poly(methyl methacrylate) (PMMA), cellulose tri-acetate (TAC), polypropylene (PP), polyethylene (PE), polycarbonates (PC), bio degradable polymer such as Polyethylene 2,5-furandicarboxylate (PEF), multilayers thereof, or a combination thereof. In one or more implementations, which can be combined with other implementations, the flexible support layer 210 is a web-based substrate.

[0039] In one or more implementations, which can be combined with other implementations, the flexible support layer 210 has a thickness in a range from about 1 micron to about 100 microns, or in a range from about 1 micron to about 100 microns, or in a range from about 10 microns to about 50 microns, or in a range from about 25 microns to about 50 microns.

[0040] The flexible support layer stack 202 may further include a release layer 220. As shown in FIG. 2A, the release layer 220 may be formed on the frontside 21 Of of the flexible support layer 210. The release layer 220 has a frontside 220f (also referred to as a front surface) and a backside 220b (also referred to as a back surface) opposite the frontside 220f. In one or more implementations, the release layer 220 is deposited on the frontside 21 Of of the flexible support layer 210 such that the backside 220b of the release layer 220 contacts the frontside 21 Of of the flexible support layer 210. Any suitable process may be used to form the release layer 220 on the frontside of the flexible support layer 210. The release layer 220 may be deposited using non-vacuum coating techniques, for example, coating techniques performed in atmosphere. In oneor more implementations, which may be combined with other implementations, the release layer 220 and the flexible support layer 210 are pre-fabricated.

[0041] The release layer 220 may be or include any material suitable for releasing the subsequently formed materials from the flexible support layer 210 during the SIDT process. The release layer 220 may be or include polymer release layers (for example, plastics, silicone, polymethylacrylate (PMA), polyethylene terephthalate (PET), fluorocarbons, polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), etc.), poly(olefin sulfones), organic materials, inorganic materials, among other materials. In some implementations, which can be combined with other implementations, the release layer 220 includes one or more nanosheets, such as one or more two-dimensional (2D) materials. In one or more implementations, which can be combined with other implementations, the release layer has a thickness of about 1 nm to about 500 nm, such as about 10 nm to about 300 nm, such as about 50 to about 200 nm. In some implementations, the release layer includes a plurality of sub-layers, each layer having a thickness of about 5 nm or less. The release layer can also be an engineered polymer tailored for high laser absorption. Optionally, the laser absorbing material can also be pattern coated on top of the plastic substrate with or without a release layer for areas of alkali metal or alloy to be transferred vs non-transferred to create desired pattern transfer.

[0042] Organic or polymer based release layers can be deposited using wetchemistry coating processes, for example, slot die coating techniques, comma bar coating techniques, or gravure coating techniques, or vacuum deposition techniques as described.

[0043] The release layer 220 may be or include inorganic materials, for example, BN, AIOx, AIOOH, Al, or a combination thereof. In particular implementations, the release layer 220 includes a multi-layer structure, for example, a multilayer structure of AI / AIOx / AIOOH. Inorganic based release layers can be deposited using vapor deposition techniques, for example, PVD techniques such as sputter deposition and electron beam deposition techniques.

[0044] In one or more implementations, the polymer material of the flexible support layer and / or the release layer 220 is selected so that the SIDT stack can be debonded from flexible support layer 210 by photo-initiated lift-off, for example, a laser lift-off process, wherein the polymer material interacts with photons entering from the flexible support layer 210 as will be described. Not to be bound by theory but it is believed that laser photons are selectively absorbed at the interface of the lithium / flexible support layer stack 202, for example, the Li / PET interface, and less reflection of laser light is intended. With selective the laser activation process described, the interface can locally create gas / plasma or induce chemical reaction to form density change creating a ‘gap’ for easy release. For example, during the laser lift-off process, the laser beam passing through the transparent material, for example, the PET substrate is absorbed by the opaque material, for example, lithium, to generate plasma, causing high-pressure gas and interfacial separation of the transparent material from the opaque material. At the same time, the released opaque layer, for example, the lithium layer, can be attached to the surface of the anode material or the surface of the current collector due to the high-pressure gas. The plasma may be maintained for a very short time, for example, around the pulse duration, and then gradually stabilizes to become gas or particles.

[0045] In one or more implementations, the release layer 220 can be or include a polymer material that is capable of photoinduced depolymerization. In one or more implementations, the polymer material can be or include a poly(olefin sulfone) material capable of photoinduced depolymerization. The poly(olefin sulfone) may be combined with photobase generators (PBGs). The poly(olefin sulfone) can be doped with a photosensitizer, for example, pyridine N-oxide. The depolymerization process can be induced by, for example, X-rays, electron-beam irradiation, or low-energy irradiation. Suitable poly(olefin sulfone) materials include poly(1 -butene sulfone) (PBS), poly(1 - pentane sulfone) (PPS), poly(1 -hexane sulfone) (PHS), poly(1 -octene sulfone) (POS), poly(cyclopentene sulfone), poly(2-methyl-1 -butene sulfone) (PMBS), poly(2-methyl- 1 -pentene sulfone) (PMPS), poly(2-methyl 1 -hexene sulfone) (PMHS), poly(2-methyl- 1 -nonene sulfone) (PMNS), poly(cyclohexene sulfone), or a combination thereof.

[0046] As used herein, a “2D material,” is an atomically thin crystalline solid having a single or few layered structure. In some implementations, the 2D materials hereinhave intra-layer covalent bonding and interlayer van der Waals bonding. In some implementations, the 2D material can have a property selected from the group of high carrier mobility, superconductivity, mechanical flexibility, high thermal conductivity, high optic and UV adsorption, a peel strength on silicone of about 3 to about 100 gram- force / in, weak interlayer bonding, and combinations thereof. The peel strength can be measured using TESA 7475 test tape having a width of 25 mm, and using a peeling angle of 180° and a peeling speed of 300 mm / min (3M method). Without being bound by theory, it is believed that selecting a 2D material having weak interlayer bonding enables ease of subsequently peeling the release layer from the support layer. In some implementations, each of the layers of the flexible support layer stack 202 can have a melting temperature that is higher than a melting temperature of an alkali metal or alloy layer 230.

[0047] In one or more implementations, each layer can have melting points that are equal and / or decrease with each added layer such that the flexible support layer 210 has the highest melting point, the release layer 220 has a melting point lower than the flexible support layer 210 and the alkali metal or alloy layer 230 has the lowest melting point. In one or more implementations, the two-dimensional material includes one or more of titanium disulfide (TiS2), tungsten disulfide (WS2), molybdenum disulfide (M0S2), boron nitride (BN), aluminum hydroxide oxide (AIHO2), MoOs, layered double hydroxide, graphene, carbon nitride, layered double hydroxide, derivatives thereof, and combinations thereof. In some implementations, the 2D material includes a metal nitride, a metal sulfide, a metal hydroxide oxide, a carbon-containing material, derivatives thereof, or combinations thereof.

[0048] Referring to FIG. 2A, an alkali metal-containing layer, for example an alkali metal or alloy layer 230 is formed over the frontside 220f of the release layer 220 (if present). The alkali metal or alloy layer 230 includes a frontside 230f (also referred to as a front surface) and a backside 230b (also referred to as a back surface) opposite the frontside 230f. In one or more implementations, where the release layer 220 is present, the alkali metal or alloy layer 230 may be formed directly on the release layer 220. In one or more implementations, as shown in FIG. 2A, the alkali metal or alloy layer 230 is formed directly on the frontside 220f of the release layer 220. The alkali metal or alloy layer 230 may be or include lithium. The alkali metal or alloy layer 230may be deposited under vacuum. The alkali metal or alloy layer 230 may be deposited under vacuum in a roll-to-roll deposition system, for example, the flexible substrate coating apparatus 700 shown in FIG. 7. The alkali metal or alloy layer 230 may be deposited via a physical vapor deposition process, for example, an evaporation process or a sputtering process. The evaporation process may be an electron beam evaporation process or a thermal evaporation process.

[0049] In one or more implementations, which can be combined with other implementations, the alkali metal or alloy layer 230 has a thickness in a range from about 1 micron to about 100 microns, or in a range from about 1 micron to about 100 microns, or in a range from about 1 micron to about 20 microns, or in a range from about 25 microns to about 50 microns.

[0050] In one or more implementations, the alkali metal or alloy layer 230 may be part of a SIDT film stack 235. Referring to FIG. 2A, although the SIDT film stack 235 is shown as including only the alkali metal or alloy layer 230, the SIDT film stack 235 typically contains additional layers, for example, protective layers, interface layers, and solid electrolyte interface (SEI) layers among other. If a SIDT film stack 235 is present, the alkali metal or alloy layer 230 is typically deposited last when forming the SIDT film stack 235. Depositing the alkali metal or alloy layer 230 last enables forming the SIDT film stack 235 without damaging the alkali metal or alloy layer 230, which typically has a lower melting point relative to other materials that are formed in the energy storage device. Conventional methods of forming energy storage devices typically include direct deposition of molten lithium onto the current collector in alkali metal or alloy anode formation or onto the anode material in pre-lithiation implementations. These methods further include maintaining the underlying substrate as the alkali metal or alloy layer 230 is formed to prevent damage to the lithium. In contrast, the SIDT film stack 235 and methods described herein, enable forming the alkali metal or alloy layer 230 last prior to transferring the SIDT film stack 235 from the flexible support layer stack 202 to a flexible substrate stack 240.

[0051] In one or more implementations, which can be combined with other implementations, a solid electrolyte interface (SEI) layer can optionally be included in the SIDT film stack 235. In some implementations, the solid electrolyte interface layercan include or be a metal salt, such as lithium salt. The lithium salt can be one or more of LiPFe, LiAsFe, LiCFsSOs, LiN(CF3SO3)3, LiBFe, LiCICMBETTE electrolyte, or combinations thereof. The electrolyte can be in a gel or polymer matrix medium. In one or more implementations, the solid electrolyte interface layer can be or include materials selected from fluorocarbons (PTFE, PVDF), LiF, Li2CO3, MgO, AIOx, AIH02, RENiO3 (RE=rare earth), BN, BaTiO3, Li4Ti5O12, ZrO2, TiO2, silicon doped lithium tantalum phosphates, for example, Li(1 +x)Ta2P(1-x)SixO8, Li1.5Ta2P0.5Si0.5O8, lithium tantalum phosphates, for example, LiTa2PO8 (LTPO), Li2Ta2SiO8 (LTSO), Li0.34La0.56TiO3, lithium aluminum titanium phosphates, for example, Li1 ,3AI0.3Ti1 ,7(PO4)3 (LATP), lithium aluminum germanium phosphates, for example, Li1.3AI0.3Ge1.7(PO4)3 (LAGP), garnet Li7La3Zr2O12 (LLZO), or a combination thereof.

[0052] In one or more implementations, which can be combined with other implementations, an interface layer can optionally be included in the SIDT film stack 235. The interface layers include at least one of an interface dielectric material, plating and stripping enhancement layers, and lithiophilic layers. The interface layers are deposited under vacuum. The interface layers may be deposited under vacuum in a roll-to-roll deposition system. The interface dielectric layer may be selected from AIOx, AIOOH, LiF, BaTiO3, ZrO2, TiO2, Li4Ti5O12, LiAIO2, AIF3, BiF3, AgFx, rare earth (RE) nickelates RENiO3, or a combination thereof. RE can be a trivalent rare-earth. RE can be lanthanide. RE can be selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Y, Lu, or a combination thereof. The plating and stripping enhancement layers may be selected from metals, alloys of metals, or chalcogenides of the metals. The plating and stripping enhancement layers may be selected from Ag, Bi, Sn, Si, Ga, In, alloys of metals or chalcogenides of Ag, Bi, Sn, Si, Ga, In, or a combination thereof. Deposition of alkali metal or alloys thereof, for example, alkali metal or its alloys. The interface layers and the alkali metal layers or alloys thereof may be deposited without breaking vacuum.

[0053] In one or more implementations, which can be combined with other implementations, a passivation layer can optionally be included in the SIDT film stack 235. In some implementations, the passivation layer includes a carbonate of the alkalimetal in the alkali metal layer. In other implementations, the passivation layer is a fluoride of the alkali metal in the alkali metal layer. The passivation layer can be formed on the flexible support layer stack 202 prior to formation of the alkali metal or alloy layer 230. In one implementation, which can be combined with other implementations, the passivation layer comprises a layer of lithium fluoride (LiF), which can be formed on the flexible support layer stack 202 prior to deposition of the alkali metal or alloy layer 230. In some implementations, which can be combined with other implementations, the passivation layer comprises a layer of lithium carbonate, which can be formed on the flexible support layer stack 202 prior to deposition of the alkali metal or alloy layer 230. The layer of lithium carbonate can be formed by exposure of an alkali metal or alloy layer to carbon dioxide. In some implementations, the alkali metal or alloy layer is exposed to carbon dioxide in the presence of heat. The passivation layer can have a thickness ranging from about 50 nm to about 100 nm. The passivation layer can serve as a protective layer for the alkali metal or alloy layer 230. For example, the passivation layer can protect the alkali metal or alloy layer 230 from oxidation and damage during storage and shipping.

[0054] In one or more implementations, which may be combined with other implementations, the flexible support layer stack 202 and the alkali metal or alloy layer 230 are pre-fabricated. In other implementations, the flexible support layer stack 202 is pre-fabricated and the alkali metal or alloy layer 230 is formed on the flexible support layer stack 202 via a deposition process, for example, a physical vapor deposition (PVD) process.

[0055] After operation 110 and prior to operation 120, the flexible support layer stack 202 having the alkali metal or alloy layer 230 or SIDT film stack 235 formed thereon may be transferred from a vacuum coating system, for example, the flexible substrate coating apparatus 700 shown in FIG. 7 to a lamination transfer apparatus, for example, the lamination transfer system 800 shown in FIG. 8. The lamination transfer process may include applying the flexible substrate stack 240 to the frontside 230f of the alkali metal or alloy layer 230 and removing the flexible support layer 210 and optionally the release layer 220 from the alkali metal or alloy layer 230 to form an anode film stack 260.

[0056] Referring to FIG. 2B, at operation 120, the alkali metal or alloy layer 230 is laminated to the flexible substrate stack 240. The flexible substrate stack 240 can include one or more layers. In some implementations, for example, for an alkali metal or alloy anode device, the flexible substrate stack 240 can include a current collector. In some implementations, for example, for a pre-lithiation process, the flexible substrate stack 240 can include an anode material. In other implementations, for a pre-lithiation process, the flexible substrate stack 240 can include both a current collector and an anode material. In yet other implementations, the flexible substrate stack 240 can be or include a separator, for example, the separator 280 as shown in FIG. 2G. The flexible substrate stack 240 can be or include a current collector or a current collector having anode material formed thereover. In one or more implementations, which can be combined with other implementations, the flexible substrate stack 240 includes a web-based substrate, for example, the current collector can be a web-based substrate. Any suitable current collector may be used. The current collector can include or be, but is not limited to, aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), manganese (Mn), chromium (Cr), stainless steel, clad materials, metallized plastic, paper, stainless steel, metal mesh, or a combination thereof. Any suitable anode material may be used. The anode material can include or be, but is not limited to, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, or combinations thereof. During the lamination process of operation 120, the alkali metal or alloy layer 230 is contacted to the flexible substrate stack 240. For example, the frontside 230f of the alkali metal or alloy layer 230 is contacted to a surface of the flexible substrate stack 240 as shown in FIG. 2B. In some implementations, where the flexible substrate stack 240 only includes a current collector, the frontside 230f of the alkali metal or alloy layer 230 is contacted to a surface of the current collector. In some implementations, where the flexible substrate stack 240 includes the anode material, the frontside 230f of the alkali metal or alloy layer 230 is contacted to a surface of the anode material to pre-lithiate the anode material.

[0057] In one or more implementations, the flexible substrate stack 240 includes a non-stick coating 248. The non-stick coating 248 is formed on a portion of the frontside 240f of the flexible substrate stack 240. The non-stick coating 248 may be patterned.The non-stick coating 248 protects a portion of the frontside 240f of the flexible substrate stack 240 from lithium contamination when the patterned alkali metal or alloy layer 262 is separated from the flexible support layer stack 202. For example, referring to FIG. 2D and FIG. 2E, the non-stick coating 248 keeps the coated portion of the flexible substrate stack 240 free from lithium coating. The uncoated portion of the flexible substrate stack 240 may be used to form a tab. The non-stick coating 248 may be any suitable polymer coating. In one or more implementations, which can be combined with other implementations, the non-stick coating 248 is selected from polyvinyl alcohol (PVA), polyvinylidene fluoride (PVDF), and polytetrafluoroethylene (PTFE), fluorocarbons such as CxFy, CsFe.CsFs etc.; salts such as LiFSI, LiFSI etc.

[0058] Referring to FIG. 2C, optionally, at operation 130, pressure is applied to one or more of the flexible substrate stack 240 and the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon to laminate the flexible substrate stack 240 to the alkali metal or alloy layer 230. In some implementations, where the method 100 is performed in a roll-to-roll tool, web tension is sufficient to laminate the alkali metal or alloy layer 230 to the flexible substrate stack 240 and additional pressure is not needed. In some implementations, where additional pressure is used to laminate the alkali metal or alloy layer 230 to the flexible substrate stack 240, the lamination process includes pressing the alkali metal or alloy layer 230 to the flexible substrate stack 240 with a magnitude of pressure sufficient to attach the alkali metal or alloy layer 230 to the flexible substrate stack 240 without damaging the alkali metal or alloy layer 230. In other words, the pressure is such that the alkali metal or alloy layer 230 is not mechanically destroyed or degraded, such as by cracking or crushing. Pressure may be applied using any suitable techniques. In one or more implementations, pressure is applied via a calendering process. The calendering process may include using a pair of calendering rollers 242a-b as is shown in FIG. 2C. For example, pressure may be applied to the backside 210b of the flexible support layer 210 and a backside 240b of the flexible substrate stack 240. In one or more other implementations, pressure is applied by a vacuum source. In one or more other implementations, the pressure is external pressure.

[0059] Operation 120 and operation 130 may occur simultaneously, sequentially, or partially overlap.

[0060] Referring to FIG. 2D, at operation 140, is exposed to a laser activation process. The laser activation process of operation 140 includes exposing the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon to a laser. In one or more implementations, the laser activation process of operation 140 is a laser lift-off process as described. In one or more implementations, during the laser activation process of operation 140, a laser 246a-b provided by one or more laser sources 244a-b is directed through the backside 210b of the flexible support layer 210 to activate the interface of the alkali metal or alloy layer 230 and the flexible support layer stack 202, for example, the Li-PET interface. As is shown in FIG. 2D, the laser 246a-b can be directed through the backside of the flexible support layer stack 202, for example, from the plastic containing substrate or PET side of the flexible support layer stack 202. Exposure to the laser can activate not only a surface of the alkali metal or alloy layer 230 but also a portion of the flexible support layer stack 202. For example, exposure to the laser can activate a portion of the flexible support layer stack 202, for example, an activated portion 222 of the release layer 220, a portion of the flexible support layer 210 if the release layer 220 is not present, or both a portion of the flexible support layer 210 and the release layer 220. In one or more implementations, the activated portion 222 can correspond to a void volume. Exposure to the laser can induce a lithium transfer process creating a void volume between the alkali metal or alloy layer 230 and the flexible support layer stack 202. This void volume can make separation of the alkali metal or alloy layer 230 from the flexible support layer stack 202 easier during transfer of the alkali metal or alloy layer 230 from the flexible support layer stack 202 to the flexible substrate stack 240. The void volume can be formed in a pattern such that portions of the alkali metal or alloy layer 230 that are above the patterned void volume can be more easily removed thus forming a pattern when transferred onto the flexible substrate stack 240. In addition, exposure to the laser 246a-b can be used to pattern the alkali metal or alloy layer 230 such that a precise pattern of patterned alkali metal or alloy layer 262 can be transferred from the flexible support layer stack 202 to the flexible substrate stack 240.

[0061] In some implementations, which can be combined with other implementations, the release layer 220 can be or include a polymer material that is capable of photoinduced depolymerization. Selective exposure of the release layer,for example, the activated portion 222 of the release layer 220 and / or the flexible support layer 210 during the laser activation process can also be utilized for local interface debonding by selective heating of the portions of the release layer 220, which can also be used for pattern transfer.

[0062] In some implementations, which can be combined with other implementations, the mechanism of void formation is believed to be a combination of plasma generation by photoionization with recombination of sublimation and lithium.

[0063] The laser source 244a-b can be an IR laser source. The laser source 244a- b can provide is a pulsed laser. In one implementation, which can be combined with other embodiments described herein, the laser 246a-b includes a Gaussian beam profile with a beam quality “M2-factor” of less than about 1.3. In another implementation, which can be combined with other implementations described, the laser 246a-b is a Bessel-type beam profile. In yet other embodiments, the laser 246a- b is a multi-focus laser and uses a bifocal lens as part of an optical array. Multiple lenses may also be used within the optical array to diffract the laser 246a-b and form multiple focal points within the flexible support layer stack 202 and the alkali metal or alloy layer 230. The laser source 244a-b can be in communication with a controller, for example, the controller 805. The controller 805 may control other input parameters or output parameters of the laser source 244a-b.

[0064] In one or more implementations, which can be combined with other implementations, laser source 244a-b is an IR fiber laser. The IR fiber laser is a 1060- nm laser with a pulse width of 5 to 500 nanoseconds, for example, a 30 nanosecond pulse width, a Gaussian profile, ~150 urn spot size, 2 m / sec raster speed, and a line distance of 70 urn.

[0065] The laser activation process can be run in a single pass only, or in multiple passes. However, due to the moving speed of the flexible substrates, it may be preferable that the laser activation process be performed in a single pass.

[0066] In one or more implementations, which can be combined with other implementations, the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon is exposed to a pre-heat process prior to operation 140. Thepre-heat process can include exposing the alkali metal or alloy layer 230 to thermal energy, for example, thermal energy provided by an IR lamp source. In some implementations, where the alkali metal or alloy layer 230 is a thicker layer, pre-heating the alkali metal or alloy layer 230 can reduce the amount of energy during the laser activation process.

[0067] Referring to FIG. 2E, at operation 150, the patterned portion of the alkali metal or alloy layer 230 is separated from the flexible support layer stack 202 to form an anode film stack 260 including a patterned alkali metal or alloy layer 262 formed on the flexible substrate stack 240. In one or more implementations, which can be combined with other implementations, portions of the release layer 220 can be transferred or partially transferred with the patterned alkali metal or alloy layer 262. Alternatively, in other implementations, the release layer 220 remains or partially remains on the flexible support layer 210 after operation 150.

[0068] Referring to FIG. 2F, at operation 160, the anode film stack 260 may be exposed to a laser ablation process to remove any residue remaining on either the flexible substrate stack 240, the patterned alkali metal or alloy layer 262, or both the flexible substrate stack 240 and the patterned alkali metal or alloy layer 262. For example, the laser ablation process can remove the non-stick coating 248 as is shown in FIG. 2F.

[0069] Referring to FIG. 2G, at operation 170, the anode film stack 260 can be integrated with a cathode structure 270, a separator 280, or both the cathode structure 270 and the separator 280 to form an energy storage device 290. The separator 280 may include, a microporous polymeric separator including a polyolefin, by way of nonlimiting example. The polyolefin may be a homopolymer (derived from a single monomer constituent) or a heteropolymer (derived from more than one monomer constituent), which may be either linear or branched. If a heteropolymer is derived from two monomer constituents, the polyolefin may assume any copolymer chain arrangement, including those of a block copolymer or a random copolymer. Similarly, if the polyolefin is a heteropolymer derived from more than two monomer constituents, it may likewise be a block copolymer or a random copolymer. In certain implementations, the polyolefin may be polyethylene (PE), polypropylene (PP), or ablend of PE and PP, or multi-layered structured porous films of PE and / or PP. Commercially available polyolefin porous membranes include CELGARD® 2500 (a monolayer polypropylene separator) and CELGARD® 2320 (a tri-layer polypropylene / polyethylene / polypropylene separator) available from Celgard LLC.

[0070] In one or more implementations, which can be combined with other implementations, the cathode structure 270 includes a cathode material 272 and a cathode current collector 274. . The cathode current collector 274 may be or include any of the flexible films described and aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), tin (Sn), silicon (Si), manganese (Mn), magnesium (Mg), alloys thereof, and combinations thereof. The cathode current collector 274 may be or include any of aluminum (Al), copper (Cu), zinc (Zn), nickel (Ni), cobalt (Co), tin (Sn), silicon (Si), manganese (Mn), magnesium (Mg), alloys thereof, and combinations thereof. In particular implementations, the cathode current collector 274 may be or include aluminum.

[0071] The cathode material 272 may be or include any suitable cathode material. The cathode material 272 or cathode may be or include any material compatible with the anode and may include an intercalation compound, an insertion compound, or an electrochemically active polymer. Suitable intercalation materials include, for example, sulfur, lithium-containing metal oxides, M0S2, FeS2, MnO2, TiS2, NbSes, LiCoO2, LiNiO2, LiMnO2, LiMn2O4, VeO and V2O5. Suitable polymers include, for example, polyacetylene, polypyrrole, polyaniline, and polythiophene. In some implementations the cathode material 272 includes a polymer binder material as described herein. The cathode material 272 or cathode may be or include a layered oxide, such as lithium cobalt oxide, an olivine, such as lithium iron phosphate, or a spinel, such as lithium manganese oxide. Examples of lithium-containing oxides may be layered, such as lithium cobalt oxide (LiCoO2), or mixed metal oxides, such as LiNixCoi-2xMnO2, LiNiMnCoO2 (“NMC”), LiNio.5Mn1.5O4, Li(Nio.8Coo.i5Alo.o5)02, LiMn2O4, and doped lithium rich layered-layered materials, wherein x is zero or a nonzero number. Examples of phosphates may be or include iron olivine (LiFePO4) and it is variants (such as LiFe(i-x)MgxPO4), LiMoPO4, LiCoPO4, LiNiPO4, Li3V2(PO4)3, LiVOPO4, LiMP2O?, or Li Fei 5P2O7, wherein x is zero or a non-zero number. Examplesof fluorophosphates may be or include LiVPCUF, LiAIPC F, LisV(PO4)2F2 LisCr(PO4)2F2 Li2CoPO4F, or Li2NiPO4F. Example of silicates may be or include Li2FeSiO4, Li2MnSiO4, or Li2VOSiO4. Examples of non-lithium compounds may be or include NasV2(PO4)2F3. The energy storage device 290 may include additional layers and or materials, which are omitted for the sake of brevity.

[0072] FIG. 3 illustrates a flow chart of a method 300 for manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. FIGS. 4A-4G illustrate views of various stages of manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. Although FIGS. 4A-4G are described in relation to the method 300, it will be appreciated that the structures disclosed in FIGS. 4A-4G are not limited to the method 300, but instead may stand alone as structures independent of the method 300. Similarly, although the method 300 is described in relation to FIGS. 4A-4G, it will be appreciated that the method 300 is not limited to the structures disclosed in FIGS. 4A-4G but instead may stand alone independent of the structures disclosed in FIGS. 4A-4G. It should be understood that FIGS. 4A-4G illustrate only partial schematic views of the energy storage device structure, and the energy storage device structure may contain any number of additional layer and / or additional materials common to energy storage devices, which are not shown for the sake of brevity. It should also be noted that although the method 300 illustrated in FIG. 3 is described sequentially, other process sequences that include one or more operations that have been omitted and / or added, and / or have been rearranged in another desirable order, fall within the scope of the implementations of the disclosure provided herein.

[0073] Referring to FIG. 4A, at operation 310 a flexible support layer stack 202 is provided. The flexible support layer stack 202 includes a flexible support layer 210. The flexible support layer stack 202 may further include a release layer 220. An alkali metal or alloy layer 230 is formed on the frontside 220f of the release layer 220 (if present) or on the frontside 21 Of of the flexible support layer 210 if the release layer 220 is not present.

[0074] After operation 310 and prior to operation 320, the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon may be transferredfrom a vacuum coating system, for example, the flexible substrate coating apparatus 700 shown in FIG. 7 to a lamination transfer apparatus, for example, the lamination transfer system 800 shown in FIG. 8.

[0075] Referring to FIG. 4B, at operation 320, the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon is exposed to a laser activation process. The laser activation process may be performed similarly to the laser activation process of operation 140. In one or more implementations, the laser activation process of operation 320 is a laser lift-off process as described. Exposure to the laser can activate a portion of the flexible support layer stack 202, for example, a first activated portion 222a and a second activated portion 222b of the release layer 220, the flexible support layer 210 if the release layer 220 is not present, or both the flexible support layer 210 and the release layer 220.

[0076] In one or more implementations, which can be combined with other implementations, the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon is exposed to a pre-heat process prior to operation 320.

[0077] Referring to FIG. 4C, at operation 330, unwanted portions of alkali metal or alloy 410a-b are removed from the alkali metal or alloy layer 230 to form a patterned alkali metal or alloy layer 430. The unwanted portions of alkali metal or alloy 410a-b correspond to the first activated portion 222a and the second activated portion 222b of the release layer 220 and or the flexible support layer 210 respectively. The unwanted portions of alkali metal or alloy 410a-b may be removed using a dummy substrate 420 as is shown in FIG. 4C. The dummy substrate 420 may comprise any suitable material. In one or more implementations, which can be combined with other implementations, the dummy substrate 420 may be or include any of the polymer materials, which can be used to form the flexible support layer 210. In one example, the dummy substrate 420 is or includes PET. The dummy substrate 420 may be coated with an adhesive material layer 412. The adhesive material layer 412 adheres to the unwanted portions of lithium and improves removal of the unwanted portions of lithium. The adhesive material layer 412 may be a continuous adhesive material layer. The adhesive material layer 412 may be patterned to form a patterned adhesive material layer 412a-b. As is shown in FIG. 4C, the patterned adhesive material layer412a-b corresponds to the unwanted portions of the alkali metal or alloy 410a-b. The adhesive material layer 412 may be or include any suitable material that adheres to lithium. The dummy substrate 420 and the patterned adhesive material layer 412a-b, if present, contact the frontside 230f of the alkali metal or alloy layer 230. For example, the patterned material layer 412a contacts the alkali metal or alloy layer 230 over the first activated portion 222a of the release layer 220 and / or the flexible support layer 210 and the patterned material layer 412b contacts the alkali metal or alloy layer 230 over the second activated portion 222b of the release layer 220 and / or the flexible support layer 210. The dummy substrate 420 is separated from the alkali metal or alloy layer 230 removing the unwanted portions of the alkali metal or alloy 410a-b and thus forming the patterned alkali metal or alloy layer 430.

[0078] Referring to FIG. 4D, at operation 340, the patterned alkali metal or alloy layer 430 is laminated to a flexible substrate stack 240. The flexible substrate stack 240 can include one or more layers. The lamination process of operation 340 may be performed similarly to operation 120 of the method 100. During the lamination process of operation 340, the patterned alkali metal or alloy layer 430 is contacted to the flexible substrate stack 240. For example, the frontside 430f of the patterned alkali metal or alloy layer 430 is contacted to a surface of the flexible substrate stack 240 as shown in FIG. 4D. In some implementations, where the flexible substrate stack 240 only includes the current collector, the frontside 430f of the patterned alkali metal or alloy layer 430 is contacted to a surface of the current collector. In some implementations, where the flexible substrate stack 240 includes the anode material, the frontside 430f of the patterned alkali metal or alloy layer 430 is contacted to a surface of the anode material to pre-lithiate the anode material.

[0079] Referring to FIG. 4E, optionally, at operation 350, pressure is applied to one or more of the flexible substrate stack 240 and the flexible support layer stack 202. Operation 350 may be performed similarly to operation 130 of the method 100. Operation 340 and operation 350 may occur simultaneously, sequentially, or partially overlap.

[0080] Referring to FIG. 4F, at operation 360, the patterned alkali metal or alloy layer 430 is separated from the flexible support layer stack 202 to form an anode filmstack 260 including the patterned alkali metal or alloy layer 430 formed on the flexible substrate stack 240. In one or more implementations, which can be combined with other implementations, portions of the release layer 220 can be transferred or partially transferred with the patterned alkali metal or alloy layer 430. Alternatively, in other implementations, the release layer 220 remains or partially remains on the flexible support layer 210 after operation 360.

[0081] Referring to FIG. 4G, at operation 370, the anode film stack 260 can be integrated with a cathode structure 270, a separator 280, or both the cathode structure 270 and the separator 280 to form the energy storage device 290 as described in operation 170.

[0082] FIG. 5 illustrates a flow chart of a method 500 for manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. FIGS. 6A-6E illustrate views of various stages of manufacturing an energy storage device in accordance with one or more implementations of the present disclosure. Although FIGS. 6A-6E are described in relation to the method 500, it will be appreciated that the structures disclosed in FIGS. 6A-6E are not limited to the method 500, but instead may stand alone as structures independent of the method 500. Similarly, although the method 500 is described in relation to FIGS. 6A-6E, it will be appreciated that the method 500 is not limited to the structures disclosed in FIGS. 6A-6E but instead may stand alone independent of the structures disclosed in FIGS. 6A-6E. It should be understood that FIGS. 6A-6E illustrate only partial schematic views of the energy storage device structure, and the energy storage device structure may contain any number of additional layer and / or additional materials common to energy storage devices, which are not shown for the sake of brevity. It should also be noted that although the method 500 illustrated in FIG. 5 is described sequentially, other process sequences that include one or more operations that have been omitted and / or added, and / or have been rearranged in another desirable order, fall within the scope of the implementations of the disclosure provided herein.

[0083] Referring to FIG. 6A, at operation 510 a flexible support layer stack 202 having an alkali metal or alloy layer 230 formed thereover is provided as described in operation 110.

[0084] Referring to FIG. 6B, at operation 520, the alkali metal or alloy layer 230 is laminated to a flexible substrate stack 240 as described in operation 120.

[0085] Referring to FIG. 60, at operation 530, pressure is applied to one or more of the flexible substrate stack 240 and the flexible support layer stack 202 while performing the laser activation process. Pressure may be applied as described in operation 130 and the laser activation process may be performed as described in operation 140. In one or more implementations, the laser activation process of operation 530 is a laser lift-off process as described. The pressure and the laser activation occur simultaneously such that the processes at least partially overlap. Any suitable pressure application technique may be used during operation 530. The pressure application process of operation 530 may include a calendering process as described in operation 130. The calendering rollers 242a-b depicted in FIG. 2C may be replaced with pressure application plates 642a-b shown in FIG. 6C. In one or more implementations, which can be combined with other applications, the pressure application plates 642a-b are transparent to lasers such that that the laser activation process and the pressure application process can be performed simultaneously or at least partially overlap.

[0086] Referring to FIG. 6D, at operation 540, the patterned portion of the alkali metal or alloy layer 230 is separated from the flexible support layer stack 202 to form an anode film stack 260 including a patterned alkali metal or alloy layer 262 formed on the flexible substrate stack 240 as described in operation 540.

[0087] At operation 550, the anode film stack 260 may be exposed to a laser ablation process to remove any residue remaining on either the flexible substrate stack 240, the patterned alkali metal or alloy layer 262, or both the flexible substrate stack 240 and the patterned alkali metal or alloy layer 262.

[0088] Referring to FIG. 6E, at operation 560, the anode film stack 260 can be integrated with a cathode structure 270, a separator 280, or both the cathode structure 270 and the separator 280 to form an energy storage device 290 as described in operation 170.

[0089] FIG. 7 illustrates a schematic view of a flexible substrate coating apparatus 700 for forming at least a portion of the SIDT film stack described in accordance with one or more implementations of the present disclosure. The flexible substrate coating apparatus 700 may be a roll-to-roll coating system. The flexible substrate coating apparatus 700 may be used to perform portions of the methods 100, 300, 500, for example, the portions of the methods 100, 300, 500, that are performed using vacuum deposition.

[0090] The flexible substrate coating apparatus 700 may be a SMARTWEB®, manufactured by Applied Materials, adapted for manufacturing lithium anode devices according to the implementations described herein. According to some implementations, the flexible substrate coating apparatus 700 can be used for manufacturing lithium anodes or pre-lithiated anodes, and particularly for portions of SIDT film stacks containing lithium films. The flexible substrate coating apparatus 700 is constituted as a roll-to-roll system including an unwinding module 702, a processing module 704 and a winding module 706. In one or more implementations, the processing module 704 comprises a plurality of processing modules or chambers 710, 720, 730 and 740 arranged in sequence, each configured to perform one processing operation to the continuous sheet of material 750 or web of material, for example, the flexible support layer 210 or the flexible support layer stack 202. In one or more implementations, as depicted in FIG. 7, the processing chambers 710-740 are radially disposed about a coating drum 755. Arrangements other than radial are contemplated. For example, in another implementation, the processing chambers may be positioned in a linear configuration.

[0091] In one implementation, the processing chambers 710-740 are stand-alone modular processing chambers wherein each modular processing chamber is structurally separated from the other modular processing chambers. Therefore, each of the stand-alone modular processing chambers, can be arranged, rearranged, replaced, or maintained independently without affecting each other. Although four processing chambers 710-740 are shown, it should be understood that any number of processing chambers may be included in the flexible substrate coating apparatus 700.

[0092] The processing chambers 710-740 may include any suitable structure, configuration, arrangement, and / or components that enable the flexible substrate coating apparatus 700 to deposit portions of the SIDT film stack according to implementations of the present disclosure. For example, but not limited to, the processing chambers may include suitable deposition systems including coating sources, power sources, individual pressure controls, deposition control systems, and temperature control. According to typical implementations, the chambers are provided with individual gas supplies. The chambers are typically separated from each other for providing a good gas separation. The flexible substrate coating apparatus 700 according to implementations described herein is not limited in the number of deposition chambers. For example, but not limited to, flexible substrate coating apparatus 700 may include 3, 6, or 12 processing chambers.

[0093] The processing chambers 710-740 typically include one or more deposition units 712, 722, 732, and 742. Generally, the one or more deposition units as described herein can be selected from the group of a CVD source, an ALD source, a PECVD source, and a PVD source. The one or more deposition units can include an evaporation source, a sputter source, such as, a magnetron sputter source, a DC sputter source, an AC sputter source, a pulsed sputter source, a radio frequency (RF) sputtering source, or a middle frequency (MF) sputtering source. The one or more deposition units can include an evaporation source. In one implementation, the evaporation source is a thermal evaporation source or an electron beam evaporation source. In one implementation, the evaporation source is a lithium (Li) source. Further, the evaporation source may also be an alloy of two or more metals. The material to be deposited (e.g., lithium) can be provided in a crucible. The lithium can, for example, be evaporated by thermal evaporation techniques or by electron beam evaporation techniques.

[0094] In some implementations, one or some of the chambers may be configured for performing deposition by other methods, such as, but not limited to, chemical vapor deposition, atomic laser deposition or pulsed laser deposition. In some implementations, one or some of the chambers may be configured for performing a plasma treatment process, such as a plasma oxidation or plasma nitridation process.

[0095] In one or more implementations, the processing chambers 710-740 are configured to process both sides of the continuous sheet of material 750. Although the flexible substrate coating apparatus 700 is configured to process the continuous sheet of material 750, which is horizontally oriented, the flexible substrate coating apparatus 700 may be configured to process substrates positioned in different orientations, for example, the continuous sheet of material 750 may be vertically oriented. In one or more implementations, the continuous sheet of material 750 is a flexible support layer, for example, the flexible support layer stack 202 as described. In one or more implementations, the continuous sheet of material 750 includes a PET substrate and optionally a release layer.

[0096] In one or more implementations, the flexible substrate coating apparatus 700 comprises a transfer mechanism 752. The transfer mechanism 752 may include any transfer mechanism capable of moving the continuous sheet of material 750 through the processing region of the processing chambers 710-740. The transfer mechanism 752 may include a common transport architecture. The common transport architecture may include a reel-to-reel system with a common take-up reel 754 positioned in the winding module 706, the coating drum 755 positioned in the processing module 704, and a feed reel 756 positioned in the unwinding module 702. The take-up reel 754, the coating drum 755, and the feed reel 756 may be individually heated. The take-up reel 754, the coating drum 755, and the feed reel 756 may be individually heated using an internal heat source positioned within each reel or an external heat source. The common transport architecture may further comprise one or more auxiliary transfer reels 753a, 753b positioned between the take-up reel 754, the coating drum 755, and the feed reel 756. Although the flexible substrate coating apparatus 700 is depicted as having a single processing region, in one or more implementations, it may be advantageous to have separated or discrete processing regions for each individual processing chamber 710-740. For implementations having discrete processing regions, modules, or chambers, the common transport architecture may be a reel-to-reel system where each chamber or processing region has an individual take-up-reel and feed reel and one or more optional intermediate transfer reels positioned between the take-up reel and the feed reel.

[0097] The flexible substrate coating apparatus 700 may include the feed reel 756 and the take-up reel 754 for moving the continuous sheet of material 750 through the different processing chambers 710-740. In one or more implementations, which can be combined with other implementations, each of the processing chamber can be configured to deposit portions of the SIDT film stack 235. In one implementation, the first processing chamber 710 and the second processing chamber 720 are each configured to deposit one or more of protective layers and / or SEI layers. The third processing chamber 730 and the fourth processing chamber 740 are configured to deposit a portion of an alkali metal-containing film, for example, the alkali metal or alloy layer 230.

[0098] In one implementation, processing chambers 730 and 740 are configured for depositing a thin film of the alkali metal or alloy on the continuous sheet of material 750. Any suitable lithium deposition process for depositing thin films of the alkali metal or alloy may be used to deposit the thin film of the alkali metal or alloy. Deposition of the thin film of the alkali metal or alloy may be by PVD processes, such as evaporation. The chambers for depositing the thin film of the alkali metal or alloy may include a PVD system, such as an electron-beam evaporator, a thermal evaporator, or a lamination system.

[0099] In operation, the continuous sheet of material 750 is unwound from the feed reel 756 as indicated by the substrate movement direction shown by arrow 708. The continuous sheet of material 750 may be guided via one or more auxiliary transfer reels 753a, 753b. It is also possible that the continuous sheet of material 750 is guided by one or more substrate guide control units (not shown) that shall control the proper run of the flexible substrate, for instance, by fine adjusting the orientation of the flexible substrate.

[0100] After uncoiling from the feed reel 756 and running over the auxiliary transfer reel 753a, the continuous sheet of material 750 is then moved through the deposition areas provided at the coating drum 755 and corresponding to positions of the deposition units 712, 722, 732, and 742. During operation, the coating drum 755 rotates around axis 751 such that the flexible substrate moves in the direction of arrow 708.

[0101] FIG. 8 illustrates a schematic side view of a lamination transfer system 800 in accordance with one or more implementations of the present disclosure. The lamination transfer system 800 includes equipment for transferring SIDT film stacks, for example, the SIDT film stacks 235, including lithium films on a first flexible carrier 810, for example, the flexible support layer stack 202, and a second flexible carrier 820, for example the flexible support layer stack 202, to each side of a flexible substrate 830, for example, the flexible substrate stack 240, so that the flexible substrate stack 240 with the alkali metal or alloy films can be used as an electrode (e.g., anode) or a pre-lithiated electrode in a lithium-ion battery. The lamination transfer system 800 includes a laser activation unit 837 for activating and / or patterning the alkali metal or alloy film prior to transferring the SIDT film stacks on the flexible carriers 810, 820 to the flexible substrate 830. The lamination transfer system 800 can further include a lamination or calendering unit 840 to transfer the SIDT film stacks on the flexible carriers 810, 820 to the flexible substrate 830.

[0102] The lamination transfer system 800 includes a first flexible carrier supply hub 815. A supply roll 811 of the first flexible carrier 810 is positioned on the first flexible carrier supply hub 815. In some implementations, the first flexible carrier 810 can be formed of a polymer material, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), metallized plastic, or combinations thereof. A SIDT film stack including a lithium film (not shown in FIG. 8) is positioned on the lower side 810L of the first flexible carrier 810, so that this lithium film faces an upper surface 830LI of the flexible substrate 830 as the first flexible carrier 810 and the flexible substrate 830 are conveyed through the lamination or calendering unit 840. The upper surface 830LI of the flexible substrate 830 is on an opposite side relative to a lower surface 830L of the flexible substrate 830. The upper surface 830LI is also referred to as the first surface or the first side of the flexible substrate 830 while the lower surface is also referred to as the second surface or the second side of the flexible substrate 830.

[0103] The lamination transfer system 800 includes a second flexible carrier supply hub 825. A supply roll 821 of the second flexible carrier 820 is positioned on the second flexible carrier supply hub 825. In some embodiments, the second flexible carrier 820 can be formed of a same material (e.g., PET) as the first flexible carrier810. A SIDT film stack including a lithium film (not shown in FIG. 8), for example, any of the SIDT film stack 235 is positioned on the upper side 820LI of the second flexible carrier 820, so that this lithium film faces the lower surface 830L of the flexible substrate 830 as the second flexible carrier 820 and the flexible substrate 830 are conveyed through the calendering unit 840.

[0104] The lamination transfer system 800 includes a flexible substrate supply hub 835. A supply roll 831 of the flexible substrate 830 is positioned on the flexible substrate supply hub 835. In some embodiments, the flexible substrate 830 can be formed of one or more of copper, graphite, silicon, silicon graphite, silicon oxide graphite, silicon, metalized plastic, or other materials.

[0105] The lamination transfer system 800 further includes the laser activation unit 837. The lamination transfer system 800 includes one or more laser sources 244a, 244b positioned to direct laser energy toward a backside of the first flexible carrier 810 and a backside of the second flexible carrier 820. The one or more laser sources 244a, 244b can be adapted to process alkali metal or alloy films formed on the first flexible carrier 810 and the second flexible carrier 820 as described in the methods 100, 300, 500.

[0106] The lamination transfer system 800 can further include the calendering unit 840. The calendering unit 840 includes a first calender roller 841 and a second calender roller 842. The first flexible carrier 810, the second flexible carrier 820, and the flexible substrate 830 are arranged to be conveyed along a path that extends between the first calender roller 841 and the second calender roller 842. The flexible substrate 830 is positioned between the first flexible carrier 810 and the second flexible carrier 820 when the first flexible carrier 810, the second flexible carrier 820, and the flexible substrate 830 are conveyed between the first calender roller 841 and the second calender roller 842. The calender rollers 841 , 842 exert a high amount of pressure on the flexible carriers 810, 820 and the flexible substrate 830 that causes the SIDT film stack including the patterned alkali metal or alloy film formed on each of the flexible carriers 810, 820 to be transferred to the flexible substrate 830. In some embodiments, a release layer, for example, the release layer 220, is disposed on eachof the flexible carriers 810, 820 between the corresponding flexible carrier 810, 820 and the SIDT film stack on that flexible carrier.

[0107] The lamination transfer system 800 includes a first flexible carrier pickup hub 816. A pickup roll 812 of the first flexible carrier 810 is positioned on the first flexible carrier pickup hub 816. The SIDT film stack is no longer on the first flexible carrier 810 when the first flexible carrier 810 is wound onto the first flexible carrier pickup hub 816 because the SIDT film stack previously on the first flexible carrier 810 is transferred onto the flexible substrate 830 by the calendering unit 840.

[0108] The lamination transfer system 800 includes a second flexible carrier pickup hub 826. A pickup roll 822 of the second flexible carrier 820 is positioned on the second flexible carrier pickup hub 826. The SIDT film stack is no longer on the second flexible carrier 820 when the second flexible carrier 820 is wound onto the second flexible carrier pickup hub 826 because the SIDT film stack previously on the second flexible carrier 820 is transferred onto the flexible substrate 830 by the calendering unit 840.

[0109] The lamination transfer system 800 includes a flexible substrate pickup hub 836. A pickup roll 832 of the flexible substrate 830 is positioned on the flexible substrate pickup hub 836. The flexible substrate 830 includes a SIDT film stack on each of the upper surface 830LI and the lower surface 830L of the flexible substrate 830. The SIDT film stacks are transferred from the respective flexible carriers 810, 820 onto the flexible substrate 830 by the calendering unit 840.

[0110] The lamination transfer system 800 further includes a plurality of rollers 881 - 888. In some embodiments, each of the rollers 881 -888 can be passive rollers. The rollers 881 -888 can assist in applying proper tension to and assist in changing the direction of the flexible carriers 810, 820 and the flexible substrate 830 during the movement of each of the flexible carriers 810, 820 and the flexible substrate 830 through the different portions of the lamination transfer system 800. Some of the rollers 881 -888 can also assist in moving the flexible carriers 810, 820 closer to or further away from the flexible substrate 830. For example, the second and third rollers 882, 883 assist in bringing the flexible carriers 810, 820 into contact with the flexiblesubstrate 830 before the flexible carriers 810, 820 and the flexible substrate 830 are conveyed through the calendering unit 840. Additionally, the fourth and fifth rollers 884, 885 provide a location at which tension can be applied to the flexible carriers 810, 820 to peel the flexible carriers 810, 820 away from the flexible substrate 830. In some embodiments, one or more of the rollers 881 -888 can instead be a bar, such as metal bar, that can apply tension to the carrier or flexible substrate during the movement of the carrier or flexible substrate.

[0111] The lamination transfer system 800 can further include actuators (not shown) configured to rotate each of the hubs 815, 816, 825, 826, 835, 836, so that the flexible carriers 810, 820 and the flexible substrate 830 can be conveyed from the corresponding supply hub 815, 825, 835, through the calendering unit 840, and to the corresponding pick hub 816, 826, 836. The lamination transfer system 800 can further include one or more actuators (not shown) to rotate the calender rollers 841 , 842 of the calendering unit 840. The rotational speed of the actuators can be adjusted to control the speed at which the flexible substrate 830 and flexible carriers 810, 820 are conveyed through the lamination transfer system 800.

[0112] In the lamination transfer system 800, the flexible substrate 830 is conveyed along a path from the supply roll 831 that is supported by the supply hub 835, past the first roller 881 , between the second and third rollers 882, 883, between the calender rollers 841 , 842, between the fourth and fifth rollers 884, 885, past the eighth roller 888, and to the pickup roll 832 around the pickup hub 836. The pickup hub 836 is configured to rotate and assist in conveying the flexible substrate along the path after the flexible substrate 830 passes between the first calender roller 841 and the second calender roller 842. Similarly, the pickup hubs 816, 826 are configured to rotate and assist in conveying the flexible carriers along paths between the supply hubs 815, 825 and the pickup hubs 816, 826.

[0113] The lamination transfer system 800 can also include a controller 805 for controlling processes performed by the lamination transfer system 800. The controller 805 can be any type of controller used in an industrial setting, such as a programmable logic controller (PLC). The controller 805 includes a processor 807, a memory 806, and input / output (I / O) circuits 808. The controller 805 can further include one or moreof the following components (not shown), such as one or more power supplies, clocks, communication components (e.g., network interface card), and user interfaces typically found in controllers for semiconductor equipment.

[0114] The memory 806 can include non-transitory memory. The non-transitory memory can be used to store the programs and settings described below. The memory 806 can include one or more readily available types of memory, such as read only memory (ROM) (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, floppy disk, hard disk, or random access memory (RAM) (e.g., non-volatile random access memory (NVRAM).

[0115] The processor 807 is configured to execute various programs stored in the memory 806, such as a program configured to execute the methods 100, 300, 500 described. During execution of these programs, the controller 805 can communicate to I / O devices through the I / O circuits 808. For example, during execution of these programs and communication through the I / O circuits 808, the controller 805 can control outputs (e.g., the actuators connected to the different hubs and the calendering unit 840). The memory 806 can further include various operational settings used to control the lamination transfer system 800. For example, the settings can include speed settings for the actuators connected to the hubs.

[0116] FIG. 9A illustrates a schematic side view of a lamination apparatus 900 in accordance with one or more implementations of the present disclosure. The lamination apparatus 900 can be used to perform the lamination processes described herein. The lamination apparatus 900 may be used to perform portions of the methods 100, 300, 500. For example, the pressure application process of operation 530 shown in FIG. 6C. The lamination apparatus includes a mandrel 902 having a surface 904. The surface 904 may include a lamination zone 906 upon which a film stack 908 is placed. The film stack 908 includes the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon contacted with the flexible substrate stack 240. The mandrel 902 has a plurality of vacuum holes (not shown) formed therethrough. The vacuum holes are fluidly coupled with a vacuum source 912. The lamination apparatus may further include laser sources, for example, the laser source 244a-b for patterning the alkali metal or alloy layer. The flexible support layer stack202 having the alkali metal or alloy layer 230 formed thereon is contacted with the flexible substrate stack 240 are covered with a transparent film 920. The transparent film may be formed from a bagging film that is sealed upon the mandrel 902 to enclose the flexible support layer stack 202 having the alkali metal or alloy layer 230 formed thereon contacted with the flexible substrate stack 240. The transparent film largely prevents air and / or gasses from passing therethrough. Generally, the transparent film 920 includes any suitably impermeable membrane, layer, or barrier that does not appreciably adhere to the film stack 908. Suitable materials from which the transparent film 920 may be made include plastics, rubbers, resins, and the like. In operation, the vacuum source 912 is controlled to apply pressure to the film stack laminating the alkali metal or alloy layer to the flexible substrate stack 240.

[0117] FIG. 9B is an image 950 of one example of a lamination apparatus in accordance with one or more implementations of the present disclosure.

[0118] Examples:

[0119] The following non-limiting examples are provided to further illustrate embodiments described herein. However, the examples are not intended to be all inclusive and are not intended to limit the scope of the implementations described herein.

[0120] FIG. 10 illustrates an image 1000 of a lithium pattern 1010 transferred onto a graphite anode 1020 in accordance with one or implementations of the present disclosure. The lithium pattern 1010 depicted in image 1000 was formed from a lithium layer coated on a PET substrate. The lithium layer was patterned to form the lithium pattern 1010 on the PET substrate using a laser as described herein and the lithium pattern 1010 was selectively transferred from the PET substrate to the graphite anode 1020 to form the structure shown in image 1000.

[0121] The previously described implementations of the present disclosure have many advantages. However, the present disclosure does not require that all the advantageous features and all the advantages need to be incorporated into every implementation of the present disclosure. The transfer process and systems described enable roll-to-roll laser lift-off processing with one or more of the followingadvantages: patterned lithium transfer, low-pressure calendering lithium transfer, room temperature lithium transfer, lithium surface modification under a controlled environment, faster transfer rate, reuse of the plastic flexible support substrate, no need to slit the web for pattern transfer, simplifies transfer tool architecture and small tool footprint. This transfer process is safe and industrially scalable for high-volume manufacturing. In addition, the ability to transfer lithium in a controlled environment and the potential to reuse the plastic substrate rolls provides a low-risk commercialization path.

[0122] In the Summary and in the Detailed Description the claims below, and in the accompanying drawings, reference is made to particular features (including method steps) of the present disclosure. It is to be understood that the disclosure in this specification includes all possible combinations of such particular features. For example, where a particular feature is disclosed in the context of a particular aspect or implementation of the present disclosure, or a particular claim, that feature can also be used, to the extent possible in combination with and / or in the context of other particular aspects and implementations of the present disclosure, and in the present disclosure generally.

[0123] The term “comprising,” “including” and “having” and grammatical equivalents thereof are used herein to mean that other components, ingredients, operations, etc. are optionally present. For example, an article “comprising” (or “which comprises”) components A, B, and C can consist of (i.e. , contain only) components A, B, and C, or can contain not only components A, B, and C but also one or more other components. In addition, whenever a composition, an element or a group of elements is preceded with the transitional phrase “comprising” or grammatical equivalents thereof, it is understood that it is contemplated that the same composition or group of elements may be preceded with transitional phrases “consisting essentially of,” “consisting of,” “selected from the group of consisting of,” or “is” preceding the recitation of the composition, element, or elements and vice versa.

[0124] Where reference is made herein to a method comprising two or more defined operations, the defined operations can be carried out in any order or simultaneously (except where the context excludes that possibility), and the methodcan include one or more other operations which are carried out before any of the defined operations, between two of the defined operations, or after all of the defined operations (except where the context excludes that possibility).

[0125] When, in this specification, a range is given as “(a first number) to (a second number)” or “(a first number)-(a second number),” this means a range whose lower limit is the first number and whose upper limit is the second number. For example, 25 to 100 mm means a range whose lower limit is 25 mm, and whose upper limit is 100 mm.

[0126] Embodiments and all of the functional operations described in this specification can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, including the structural means disclosed in this specification and structural equivalents thereof, or in combinations of them. Embodiments described herein can be implemented as one or more non-transitory computer program products, i.e., one or more computer programs tangibly embodied in a machine readable storage device, for execution by, or to control the operation of, data processing apparatus, e.g., a programmable processor, a computer, or multiple processors or computers.

[0127] The processes and logic flows described in this specification can be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output. The processes and logic flows can also be performed by, and apparatus can also be implemented as, special purpose logic circuitry, e.g., an FPGA (field programmable gate array) or an ASIC (application specific integrated circuit).

[0128] The term “data processing apparatus” encompasses all apparatus, devices, and machines for processing data, including by way of example a programmable processor, a computer, or multiple processors or computers. The apparatus can include, in addition to hardware, code that creates an execution environment for the computer program in question, e.g., code that constitutes processor firmware, a protocol stack, a database management system, an operating system, or a combination of one or more of them. Processors suitable for the execution of acomputer program include, by way of example, both general and special purpose microprocessors, and any one or more processors of any kind of digital computer.

[0129] Computer readable media suitable for storing computer program instructions and data include all forms of nonvolatile memory, media and memory devices, including by way of example semiconductor memory devices, e.g., EPROM, EEPROM, and flash memory devices; magnetic disks, e.g., internal hard disks or removable disks; magneto optical disks; and CD ROM and DVD-ROM disks. The processor and the memory can be supplemented by, or incorporated in, special purpose logic circuitry.

[0130] When introducing elements of the present disclosure or exemplary aspects or embodiment(s) thereof, the articles “a,” “an,” “the” and “said” are intended to mean that there are one or more of the elements.

[0131] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

Claims:1 . A method of forming a film stack for an energy storage device, comprising: laminating an alkali metal containing layer to a flexible substrate stack, the alkali metal containing layer formed on a flexible support layer stack, the flexible support layer stack comprising a polymer substrate, the alkali metal containing layer formed over a frontside of the polymer substrate; patterning the alkali metal containing layer by exposing portions of the alkali metal containing layer to one or more lasers; and transferring the exposed portions of the alkali metal containing layer from the flexible support layer stack to the flexible substrate stack, the flexible substrate stack comprising a current collector or a separator.

2. The method of claim 1 , wherein the one or more lasers is directed through a backside of the polymer substrate.

3. The method of claim 2, wherein exposing portions of the alkali metal containing layer to the one or more lasers creates a void volume between the alkali metal containing layer and the flexible support layer stack.

4. The method of claim 1 , further comprising heating the alkali metal containing layer prior to patterning the alkali metal containing layer.

5. The method of claim 1 , wherein laminating the alkali metal containing layer to the flexible substrate stack comprises applying pressure to one or more of the flexible substrate stack and the flexible support layer stack.

6. The method of claim 1 , wherein the flexible support layer stack further comprises a release layer formed between the flexible support layer and the alkali metal containing layer.

7. The method of claim 6, wherein the release layer comprises a polymer material that is capable of photoinduced depolymerization.

8. The method of claim 1 , wherein the polymer substrate is a web-based polymer substrate and the current collector or the separator is a web-based substrate.

9. A method of forming a film stack for an energy storage device, comprising: patterning an alkali metal containing layer by exposing portions of the alkali metal containing layer to one or more lasers, the alkali metal containing layer formed on a flexible support layer stack, the flexible support layer stack comprising a polymer substrate and the alkali metal containing layer formed over a frontside of the polymer substrate; removing the exposed portions of the alkali metal containing layer by transferring the exposed portions of the alkali metal containing layer from the flexible support layer stack to a dummy substrate, wherein unexposed portions of the alkali metal containing layer form a patterned alkali metal containing layer; laminating the patterned alkali metal containing layer to a flexible substrate stack, the flexible substrate stack comprising a current collector or a separator; and separating the patterned alkali metal containing layer from the flexible support layer stack.

10. The method of claim 9, wherein the one or more lasers is directed through a backside of the polymer substrate.11 . The method of claim 9, wherein exposing portions of the alkali metal containing layer to the one or more lasers creates a void volume between the alkali metal containing layer and the flexible support layer stack.

12. The method of claim 9, further comprising heating the alkali metal containing layer prior to patterning the alkali metal containing layer.

13. The method of claim 9, wherein laminating the alkali metal containing layer to the flexible substrate stack comprises applying pressure to one or more of the flexible substrate stack and the flexible support layer stack.

14. The method of claim 9, wherein the flexible support layer stack further comprises a release layer formed between the flexible support layer and the alkali metal containing layer.

15. The method of claim 14, wherein the release layer comprises a polymer material that is capable of photoinduced depolymerization.

16. The method of claim 9, wherein the polymer substrate is a web-based polymer substrate and the current collector or the separator is a web-based substrate.

17. A method of forming a film stack for an energy storage device, comprising: laminating an alkali metal containing layer to a flexible substrate stack, the alkali metal containing layer formed on a flexible support layer stack, the flexible support layer stack comprising a polymer substrate, the alkali metal containing layer formed over a frontside of the polymer substrate; patterning the alkali metal containing layer by exposing portions of the alkali metal containing layer to one or more lasers while applying pressure to one or more of the flexible substrate stack and the flexible support layer stack; and transferring the exposed portions of the alkali metal containing layer from the flexible support layer stack to the flexible substrate stack, the flexible substrate stack comprising a current collector or a separator.

18. The method of claim 17, wherein the one or more lasers is directed through a backside of the polymer substrate.

19. The method of claim 18, wherein exposing portions of the alkali metal containing layer to the one or more lasers creates a void volume between the alkali metal containing layer and the flexible support layer stack.

20. The method of claim 17, further comprising heating the alkali metal containing layer prior to patterning the alkali metal containing layer.

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