Method for manufacturing a diamond substrate or a iii-v material substrate for microelectronic applications
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- SOITEC SA
- Filing Date
- 2024-07-29
- Publication Date
- 2026-06-10
AI Technical Summary
Current methods for manufacturing diamond substrates and LLL-V materials for microelectronics are limited by high dislocation densities and contamination issues, particularly for larger diameters required in power applications, and are economically costly.
A process involving the collage of diamond cobblestones on a support substrate, followed by epitaxial growth, atomic species implantation to form a weakening zone, and transfer of a continuous diamond layer to a receiver substrate, allowing for the formation of large-diameter substrates with reduced dislocation density and avoiding metal contamination.
This process enables the creation of diamond substrates with dislocation densities below 10^4 cm^-2, compatible with microelectronics, and allows for the recycling of substrates, making it economically advantageous and contamination-free.
Smart Images
Figure EP2024071481_06022025_PF_FP_ABST
Abstract
Description
[0001] Method for manufacturing a diamond substrate or a III-V material for microelectronic applications
[0002] Technical field
[0003] The invention relates to a method for manufacturing a diamond substrate or a III-V material for microelectronic applications, in particular for power applications.
[0004] State of the art
[0005] Diamond is of growing interest for applications in microelectronics, particularly for power applications.
[0006] Indeed, diamond has a thermal conductivity of up to 2200 W / K / m (i.e. 5 times the thermal conductivity of copper), which makes it particularly interesting for fulfilling a heat sink function.
[0007] Furthermore, diamond can also be considered as a material of choice for power electronics thanks to a very large band gap, a high breakdown voltage, a low threshold voltage and a high mobility of electric charge carriers.
[0008] This makes it possible to apply high electrical currents and high electrical voltages to a diamond substrate more efficiently and quickly than to other wide band gap materials without the need for a cooling system.
[0009] However, a pitfall encountered in the fabrication of single-crystal diamond substrates is the formation of dislocations, which affect electronic properties by creating energy levels in the band gap.
[0010] To use a diamond substrate in power electronics, it is necessary to dope it, obtain a low dislocation density and work in dimensions compatible with microelectronics equipment, which is currently adapted for substrates with a diameter of 150 mm, 200 mm or 300 mm.
[0011] Methods for reducing the dislocation density in a diamond substrate using lateral epitaxial growth of diamond (known as ELOG, an acronym for the English term "Epitaxial Lateral OverGrowth") have already been described.
[0012] Document WO 2014 / 045220 describes a treatment of a diamond single crystal comprising etching the surface of the single crystal on the areas with high dislocation density, the formation of metal islands located in the etched area and a resumption of diamond epitaxy on the areas with low dislocation density. The metal islands make it possible to block the dislocations and prevent their propagation in the diamond epitaxial layer.
[0013] US 2012 / 0214856 describes a method in which single crystal diamond tiles are deposited on a larger diamond support substrate of lower crystal quality, with alignment of the crystal lattices of the substrate and the tiles, a metal mask is deposited on the surface of the support substrate to promote epitaxial growth of diamond from the side surface of the tiles, and resumption of diamond epitaxy.
[0014] However, these methods have the disadvantage of being limited to small diameter substrates, smaller than the diameter required for microelectronics equipment, and of involving the presence of metal which is likely to contaminate the surface of the substrate and is therefore not compatible with the requirements relating to the contamination rate in microelectronics.
[0015] The dislocation density obtained by these processes is of the order of 10 5 cm -2 , which remains to be improved.
[0016] To tend towards a dislocation density lower than 10 4 cm -2 , other processes also promote lateral epitaxial growth but based on pits and elevations created in a starting diamond substrate.
[0017] Document FR 3022563 proposes to form an alternation of hollows and elevations on the starting substrate by successive etching steps: first, a light etching of the surface revealing the work-hardened areas with high dislocation densities, a masking of the good quality areas (corresponding to the elevations) carried out with a photosensitive resin, then a deep etching in the hollows. Lateral epitaxial growth is then favored from these hollows.
[0018] Document FR 3038917 proposes to make a through opening in the center of a diamond single crystal to promote lateral growth for which the propagation of dislocations is inhibited. This process involves a diamond growth and coalescence step located above the through opening, which is the area where the best crystal quality is obtained.
[0019] However, even if metallic contamination is avoided, these processes are penalized by a small dimension of the starting substrate and a high cost.
[0020] The above-mentioned problem extends to the fabrication of substrates of III-V materials, such as gallium nitride (GaN), indium phosphide (InP) or gallium arsenide (AsGa), due to the availability of these materials in the form of small diameter substrates.
[0021] Summary of the invention
[0022] An aim of the invention is therefore to design a method for manufacturing a diamond substrate or a III-V material whose crystalline quality and dimensions are suitable for microelectronics, in particular for power applications.
[0023] To this end, the invention proposes a method for manufacturing a diamond substrate, respectively of a III-V material for microelectronic applications, comprising: - bonding a plurality of diamond tiles, respectively of the monocrystalline III-V material on a support substrate, each tile being distant from the adjacent tiles, so as to expose a lateral surface of each tile,
[0024] - the epitaxial growth of diamond, respectively of the III-V material, from the lateral surface and the upper surface of each block, until forming a continuous layer of diamond, respectively of the III-V material, monocrystalline extending over the plurality of blocks,
[0025] - the formation, by implantation of atomic species, of a weakening zone in the continuous layer of diamond, respectively of the III-V material, monocrystalline, to delimit a surface layer to be transferred,
[0026] - bonding of the continuous layer of diamond, respectively of the III-V material, monocrystalline on a receiving substrate,
[0027] - detaching the continuous layer of diamond, respectively of the III-V material, monocrystalline along the weakening zone so as to transfer the surface layer of diamond, respectively of the III-V material, monocrystalline onto the receiving substrate, to form said diamond substrate, respectively of the III-V material.
[0028] The use of diamond or monocrystalline III-V material tiles makes it possible to overcome the size limitations of diamond or III-V material substrates present on the market, while making it possible to form a substrate of a size compatible with microelectronic applications, the size of the substrate being determined by the size of the support substrate and / or the receiving substrate.
[0029] Furthermore, the process avoids the use of metal that could contaminate the surface of the diamond substrate or III-V material, thus making it compatible with microelectronics requirements in terms of contamination.
[0030] Finally, the entire support substrate and the remainder of the continuous layer of diamond or III-V monocrystalline material can be recycled for the formation of new diamond or III-V material substrates, making the process economically advantageous.
[0031] Particularly advantageously, the method further comprises, after the formation of the continuous layer on the plurality of paving stones, a sequence of steps successively comprising:
[0032] - polishing of said continuous layer,
[0033] - a first etching of the polished surface of said continuous layer so as to reveal areas with a higher density of crystalline defects, located opposite the paving stones,
[0034] - the deposition of a photosensitive resin mask on the surface of said continuous layer so as to mask the non-etched areas,
[0035] - a second engraving, deeper than the first engraving, of the areas exposed by the mask,
[0036] - a resumption of lateral epitaxial growth from the walls of the etched areas. In certain embodiments, said sequence is repeated at least once.
[0037] In particular, said sequence is advantageously implemented as many times as necessary to obtain a dislocation density less than or equal to 10 4 cm -2 in the continuous layer of diamond, respectively of the material II lV, monocrystalline.
[0038] The continuous layer of diamond, respectively of the II lV material, monocrystalline typically has a thickness greater than or equal to 1 pm.
[0039] The surface layer of diamond, respectively of the II lV material, monocrystalline transferred onto the receiving substrate generally has a thickness between 100 nm and 1 pm.
[0040] Particularly advantageously, the distance between two adjacent blocks is between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.
[0041] Each paving stone can have a width between 3 mm and 2 cm.
[0042] The receiving substrate and / or the support substrate advantageously has a diameter greater than 100 mm.
[0043] The receiving substrate and / or the support substrate comprises silicon, silicon carbide, sapphire or quartz.
[0044] In some embodiments, the diamond slabs, respectively of the material II lV, monocrystalline are formed by a chemical vapor deposition process.
[0045] The method may further comprise, after the transfer of the surface layer of diamond, respectively of the monocrystalline II lV material onto the receiving substrate:
[0046] - polishing the remainder of the continuous layer of diamond, respectively of the material II lV, monocrystalline extending over the plurality of paving stones,
[0047] - the formation, by implantation of atomic species, of a weakening zone in the continuous layer of diamond, respectively of the III-V material, monocrystalline, to delimit a new surface layer to be transferred,
[0048] - bonding of the continuous layer of diamond, respectively of the III-V material, monocrystalline on a new receiving substrate,
[0049] - detaching the continuous layer of diamond, respectively of the III-V material, monocrystalline along the weakening zone so as to transfer the new surface layer of diamond, respectively of the III-V material, monocrystalline onto the new receiving substrate, to form a new substrate of diamond, respectively of the III-V material.
[0050] Optionally, between the polishing of the remainder of the continuous layer of diamond, respectively of the III-V material, monocrystalline and the formation of the weakening zone, a resumption of the epitaxy of diamond, respectively of the III-V material, can be implemented to thicken said continuous layer of diamond, respectively of the III-V material, monocrystalline. Brief description of the figures
[0051] Other characteristics and advantages of the invention will emerge from the detailed description which follows, with reference to the appended drawings, in which:
[0052] - Figure 1 is a schematic sectional view of the bonding of diamond or monocrystalline III-V material blocks onto a support substrate;
[0053] - Figures 2A to 2C are schematic cross-sectional views of the epitaxial growth of diamond or III-V material from the side surface and the top surface of the tiles to form a continuous layer of single-crystal diamond or III-V material on the tiles;
[0054] - Figure 3 is a schematic sectional view of the formation of a weakening zone in the continuous layer of diamond or monocrystalline III-V material;
[0055] - Figure 4 is a schematic sectional view of the bonding of the continuous layer of diamond or monocrystalline III-V material on a receiving substrate;
[0056] - Figure 5 is a schematic sectional view of the detachment of the continuous layer of diamond or monocrystalline III-V material along the embrittlement zone;
[0057] - Figure 6 is a schematic sectional view of the remainder of the continuous layer of diamond or III-V material on the support substrate after detachment;
[0058] - Figure 7 is a schematic sectional view of new epitaxial growth of diamond or III-V material on the remainder of the continuous layer of diamond or III-V material after detachment;
[0059] - Figure 8A is a schematic sectional view of the result of a first etching of the surface of the continuous layer of diamond or monocrystalline III-V material;
[0060] - Figure 8B is a schematic sectional view of the deposition of a mask on the continuous layer of diamond or monocrystalline III-V material;
[0061] - Figure 8C is a schematic sectional view of the result of a second etching of the surface of the continuous layer of diamond or monocrystalline III-V material through the mask;
[0062] - Figure 8D is a schematic sectional view of a resumption of epitaxy of diamond or III-V material on the etched surface of the continuous layer of diamond or III-V monocrystalline material.
[0063] For reasons of legibility of the figures, the different elements are not necessarily drawn to scale. Reference signs that are identical from one figure to another designate identical elements or those that fulfill the same function.
[0064] Detailed description of embodiments
[0065] The invention proposes to use blocks of monocrystalline diamond or of a monocrystalline III-V material to form, on a substrate of a size adapted to the desired use, a continuous layer of diamond or of the III-V material of good quality and compatible with the microelectronics environment.
[0066] For this purpose, as illustrated in FIG. 1, a plurality of diamond or III-V material blocks 20 are arranged on a support substrate 1. In the remainder of the description, diamond will be referred to for the sake of brevity, but the description applies similarly to any III-V material, binary, tertiary or other more complex alloy. For example, said III-V material may be gallium nitride (GaN), indium phosphide (InP) or gallium arsenide (AsGa).
[0067] The paving stones are taken from a single-crystal diamond donor substrate. For example, the paving stones are cut by any suitable means, such as a saw, laser, water jet, etc., from the donor substrate.
[0068] The paving stones advantageously have a thickness e equal to that of the donor substrate. For example, diamond substrates with a thickness between 0.3 and 2 mm are commercially available, but any other thickness could be suitable.
[0069] The pavers can advantageously have a rectangular or square shape, but any other shape is suitable. An advantage of the rectangular or square shape is that the pavers can be placed so that their edges are parallel to each other, which ensures a constant distance between the pavers.
[0070] The width of the tiles (i.e. their main dimension in a plane perpendicular to the surface of the support substrate) is chosen to allow manipulation of the tiles and their transfer from the donor substrate to the support substrate, but also to ensure a compromise between the surface covered by the tiles on the support substrate and the accessible surface on the edge of the tiles for lateral epitaxial growth. The tiles can thus have a width L between 3 mm and 2 cm.
[0071] The support substrate fulfills a mechanical support function for the tiles, in particular during the epitaxy and etching resumption stages which will be described below.
[0072] For this purpose, the support substrate advantageously has a coefficient of thermal expansion (GTE, acronym for the English term "Coefficient of Thermal Expansion") close to that of the diamond forming the tiles. By "close" is meant a coefficient of thermal expansion of the support substrate such that, during the cooling which follows the epitaxy allowing the continuous layer of diamond to be formed from the tiles, it does not generate mechanical stresses in said layer.
[0073] Advantageously, the support substrate has a diameter suitable for power microelectronics equipment, which is typically greater than 100 mm. Preferably, the diameter of the support substrate is of the order of 150 mm, 200 mm or 300 mm. The diameter of the support substrate is generally greater than that of the donor substrate. Silicon is a particularly suitable material for forming the support substrate. Indeed, it has a coefficient of thermal expansion compatible with that of diamond and certain III-V materials, and it is available in the form of large diameter substrates, so that it is particularly suitable for microelectronics equipment. However, a person skilled in the art may use any other suitable material for the support substrate, for example silicon carbide (SiC), sapphire, quartz, in monocrystalline or polycrystalline form.
[0074] Preferably the paving stones are placed directly on the support substrate and adhere to it by molecular adhesion, but an intermediate bonding layer can optionally be used.
[0075] The pavers are arranged on the support substrate, leaving a free space between two adjacent pavers. When in place on the support substrate, the pavers therefore have two free surfaces: an upper surface S1, which is the surface opposite the support substrate, parallel to the main surface of the support substrate, and a lateral surface S2, which extends over the edges of the pavers, perpendicular to the support substrate.
[0076] Since the tiles are spaced apart, epitaxial regrowth (i.e. epitaxy of the same material as the tiles) results in lateral growth, substantially parallel to the surface of the support substrate, from the lateral surface of the tiles. As indicated below, such lateral growth is more favorable to crystalline quality than vertical growth, i.e. perpendicular to the surface of the support substrate.
[0077] The distance d between two adjacent paving stones is therefore advantageously chosen to be as large as possible while allowing coalescence of the diamond islands growing from the lateral surface of the paving stones with blocking of the dislocations. Thus, the distance between two adjacent paving stones is typically between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.
[0078] In Figure 1, the paving stones are all shown with the same width and the same distance between paving stones, which makes it possible in particular to arrange the paving stones in the form of a grid with the paving stones aligned in two perpendicular directions of the support substrate to form a plurality of parallel rows and columns, but it would be possible to have paving stones of different shapes or dimensions, and arranged at different distances.
[0079] The support substrate on which the tiles are arranged is then placed in an epitaxy frame.
[0080] In said frame, temperature conditions and an atmosphere having a chemical composition suitable for epitaxial growth of diamond (or III-V material where appropriate) are implemented. A person skilled in the art is able to determine the appropriate conditions depending on the material to be grown. Figures 2A to 2C schematically illustrate different phases of the epitaxial growth of diamond on the structure of Figure 1.
[0081] In a first phase (Figure 2A), diamond islands 201, respectively 202 grow on the upper surface, respectively the lateral surface of the blocks 20, in a direction substantially perpendicular to the surface considered. In this first phase, the islands are independent of each other.
[0082] In a second phase (figure 2B), the islands coalesce, until they form a continuous layer 2 (figure 2C), which is grown until it reaches the desired thickness e2.
[0083] As illustrated in Figure 2C, the layer of interest is the continuous layer 2 which extends above the paving stones 20. Indeed, even if the material surrounding the paving stones is also diamond, the layer comprising the paving stones and the diamond formed by lateral epitaxial growth is likely to have an irregular crystal quality and is therefore not optimal for forming a diamond substrate. The thickness e2 is therefore measured between the upper surface of the paving stones and the upper surface of layer 2.
[0084] A Smart Cut™ type process can then be implemented to transfer part of the continuous layer onto a receiving substrate.
[0085] With reference to Figure 3, a weakening zone 21 is formed in the continuous layer 2, so as to delimit a surface layer 22 of diamond. As shown schematically by the arrows, the weakening zone is formed by ion implantation in the continuous layer 2.
[0086] The implantation depth is chosen to be less than or equal to the thickness of the continuous layer, so that the surface layer does not include the paving material. The thickness of the surface layer 22 is typically between 100 nm and 1 pm.
[0087] The implantation conditions may vary depending on the material of the continuous layer.
[0088] In the case of a III-V material, implantation of hydrogen and / or helium is generally sufficient to form the embrittlement zone at a given depth of the continuous layer. A person skilled in the art knows how to determine the required implantation conditions, in particular the implantation dose and energy.
[0089] In the case of diamond, it may be preferable to implement two hydrogen implantation steps to promote bubble formation in the implanted area: a first hydrogen implantation step is followed by annealing at a temperature of around 1000°C to graphitize the implanted area. Then, a second hydrogen implantation is carried out in the graphitized area, which is more conducive to bubble formation allowing subsequent detachment of the continuous layer. This process was described in Jon de Vecchy's thesis entitled "Elaboration of innovative substrates from diamond", defended on July 2, 2020, to which one can refer for details on the experimental conditions.
[0090] With reference to Figure 4, the continuous layer 2 is bonded to a receiving substrate 3. Advantageously, the receiving substrate has a diameter suitable for power microelectronics equipment, which is typically greater than 100 mm. Preferably, the diameter of the receiving substrate is of the order of 150 mm, 200 mm or 300 mm. The diameter of the receiving substrate is generally identical to that of the support substrate.
[0091] Silicon is a particularly suitable material for forming the receiving substrate. Indeed, it has a coefficient of thermal expansion compatible with that of diamond or certain III-V materials, and it is available in the form of large diameter substrates, so that it is particularly suitable for microelectronic equipment. However, those skilled in the art may use any other suitable material for the receiving substrate, for example SiC, sapphire or quartz, in monocrystalline or polycrystalline form.
[0092] The bonding of the continuous layer 2 to the receiving substrate 3 is advantageously carried out by molecular adhesion, but an intermediate bonding layer may optionally be used.
[0093] With reference to Figure 5, a fracture is initiated in the continuous layer, for example by heat treatment, application of mechanical stress or any other means, so as to detach the continuous layer along the weakening zone and transfer the surface layer 22 onto the receiving substrate 3.
[0094] We thus obtain a substrate S comprising a layer 22 of diamond or material III-
[0095] V of excellent crystalline quality on the receiving substrate 3. Said substrate can be used for the manufacture of power electronic components or for any other application.
[0096] The substrate consisting of the support substrate 1, the blocks 20 and the remainder of the continuous layer of diamond or material III-V can be recycled for the purpose of forming one or more new substrates of the same type as the substrate S, by transferring a portion of the remainder of the continuous layer onto a respective new receiving substrate.
[0097] For this purpose, as illustrated in Figure 6, the remainder 23 of the continuous layer of diamond or III-V material is polished so as to remove the defects linked to implantation and fracture.
[0098] If said remainder 23 of the continuous layer of diamond or III-V material is sufficiently thick, for example if it has a thickness e3 greater than the thickness of at least one new layer of diamond or III-V material to be transferred onto a new receiving substrate, it is then possible to implement the method of implantation, bonding and layer transfer as described with reference to FIGS. 3 to 5.
[0099] If the thickness e3 of the remainder 23 of the continuous layer of diamond or III-V material is insufficient, a resumption of epitaxy of diamond or III- material can be implemented.
[0100] V to thicken the layer of diamond or lll-V material until a layer 24 having the desired thickness e4 is obtained, as illustrated in Figure 7. One or more portions of the layer 24 can then be transferred to one or more respective new receiving substrates. The process of lateral growth of diamond or lll-V material from the lateral surface of the tiles makes it possible to block through dislocations, which improves the quality of the continuous layer at least in the areas located between the tiles. This results in a crystal quality of diamond or lll-V material suitable for the manufacture of power electronic components, at least in the parts of the continuous layer located between the tiles, which result mainly from lateral growth of diamond or lll-V material. This improved crystal quality is obtained without the addition of contaminants into or onto the layer of diamond or lll-V material.
[0101] However, the continuous layer may exhibit heterogeneous crystalline quality, as the parts of the layer facing the paving stones, which are mainly obtained by vertical growth of diamond or III-V material, exhibit more crystalline defects, including through-dislocations.
[0102] To remove said defects and homogenize the crystalline quality of the continuous layer of diamond or III-V material, the sequence of processing steps which will be described with reference to Figures 8A to 8D can then be implemented.
[0103] Said sequence of steps is carried out after the formation of the continuous layer of diamond or III-V material on the paving stones, before bonding of said layer to the receiving substrate.
[0104] As illustrated in FIG. 8A, a light etching of the surface of the continuous layer 2 is carried out. A person skilled in the art is able to choose the etching method depending on the material of the continuous layer 2. For example, the etching may be a reactive ion etching of the “Inductively Coupled Plasma Reactive-Ion Etching” (ICP-RIE) type.
[0105] The etching has the effect of revealing the Z1 zones with a higher density of defects, which are generally located opposite the blocks. Cavities are thus formed in the continuous layer 2. Depending on the thickness of the continuous layer 2, the depth of the cavities 2a can be of the order of 0.1 to 2 pm.
[0106] As illustrated in Figure 8B, a mask 4 of photosensitive resin is then deposited on the surface of the continuous layer 2. The mask has openings which expose the etched areas Z1 and protects the non-etched areas. The pattern of the mask can be predefined according to the distribution pattern of the tiles on the support substrate, i.e. with the openings arranged opposite the tiles. The mask can be formed by known photolithography techniques.
[0107] With reference to Figure 8C, a second etching is carried out through the mask 4. This second etching makes it possible to dig zones Z2 that are deep enough to promote, during the next epitaxy resumption step, lateral growth of diamond or III-V material. The depth of the zones Z2 can thus be of the order of 1 to 10 μm, depending on the thickness of the continuous layer 2. The etching does not reach the blocks 20 themselves. A person skilled in the art is able to choose the etching method depending on the material of the continuous layer. The second etching can be carried out by the same method as the first etching or by a different method.
[0108] The mask is then removed, for example by selective etching.
[0109] With reference to Figure 8D, a resumption of epitaxy of diamond or III-V material is implemented, which promotes lateral growth from the edges of the etched zones Z2, and which is accompanied by vertical growth from the non-etched zones, until coalescence and obtaining a continuous layer 2 of improved crystalline quality.
[0110] Said sequence of steps can be implemented once or more times.
[0111] Preferably, the sequence of steps is carried out as many times as necessary to achieve a dislocation density less than or equal to 10 4 cm -2 in continuous layer 2.
[0112] An advantage of the method is that it allows to obtain a very good crystalline quality, which can be higher than the crystalline quality of the tiles. Thus, in certain embodiments, the diamond tiles or the donor substrate can be obtained by a so-called HPHT (high pressure, high temperature) process, providing an optimal crystalline quality but relatively expensive. In other embodiments, the diamond or III-V material tiles or the donor substrate can be obtained by a chemical vapor deposition process, which provides a lower crystalline quality but is less expensive. However, the resumption of epitaxy with growth from the lateral surface of the tiles makes it possible to overcome this lower crystalline quality of the tiles.
Claims
Claims 1. Method for manufacturing a diamond substrate, respectively a III-V material for microelectronic applications, comprising: - bonding a plurality of diamond blocks (20), respectively of monocrystalline III-V material, onto a support substrate (1), each block being distant from the adjacent blocks, so as to expose a lateral surface (S2) of each block, - the epitaxial growth of diamond, respectively of the III-V material, from the lateral surface and the upper surface of each block, until forming a continuous layer (2) of diamond, respectively of the III-V material, monocrystalline extending over the plurality of blocks (20), - a sequence of steps comprising successively: - polishing of said continuous layer (2), - a first etching of the polished surface of said continuous layer (2) so as to reveal zones (Z1) with a higher density of crystalline defects, located opposite the blocks, - depositing a mask (4) of photosensitive resin on the surface of said continuous layer (2) so as to mask the non-etched areas, - a second engraving, deeper than the first engraving, of the areas (Z2) exposed by the mask, - a resumption of lateral epitaxial growth from the walls of the etched zones (Z2), - the formation, by implantation of atomic species, of a weakening zone (21) in the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline, to delimit a surface layer (22) to be transferred, - bonding the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline on a receiving substrate (3), - detaching the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline along the weakening zone (21) so as to transfer the surface layer (22) of diamond, respectively of the III-V material, monocrystalline onto the receiving substrate (3), to form said diamond substrate, respectively of the III-V material.
2. Method according to claim 1, wherein said sequence is repeated at least once.
3. Method according to one of claims 1 or 2, in which said sequence is carried out as many times as necessary to obtain a dislocation density less than or equal to 1 E4 cm -2 in the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline.
4. Method according to one of claims 1 to 3, in which the continuous layer of diamond, respectively of the III-V material, monocrystalline has a thickness (e2) greater than or equal to 1 pm.
5. Method according to one of claims 1 to 4, in which the surface layer of diamond, respectively of the III-V material, monocrystalline transferred onto the receiving substrate has a thickness of between 100 nm and 1 pm.
6. Method according to one of claims 1 to 5, in which the distance between two adjacent blocks is between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.
7. Method according to one of claims 1 to 6, in which each block has a width of between 3 mm and 2 cm.
8. Method according to one of claims 1 to 7, in which at least one of the receiving substrate and the support substrate has a diameter greater than 100 mm.
9. Method according to one of claims 1 to 8, in which the receiving substrate comprises silicon, silicon carbide, sapphire or quartz.
10. Method according to one of claims 1 to 9, in which the diamond blocks, respectively of the III-V material, monocrystalline are formed by a chemical vapor deposition process.
11. Method according to one of claims 1 to 10, comprising, after the transfer of the surface layer (22) of diamond, respectively of the III-V material, monocrystalline onto the receiving substrate (3): - polishing the remainder (23) of the continuous layer of diamond, respectively of the III-V material, monocrystalline extending over the plurality of blocks (20), - the formation, by implantation of atomic species, of a weakening zone in the continuous layer of diamond, respectively of the III-V material, monocrystalline, to delimit a new surface layer to be transferred, - bonding of the continuous layer of diamond, respectively of the III-V material, monocrystalline on a new receiving substrate, - detaching the continuous layer of diamond, respectively of the III-V material, monocrystalline along the weakening zone so as to transfer the new surface layer of diamond, respectively of the III-V material, monocrystalline onto the new receiving substrate, to form a new substrate of diamond, respectively of the III-V material 12. Method according to claim 11, comprising, between the polishing of the remainder (23) of the continuous layer of diamond, respectively of the III-V material, monocrystalline and the formation of the weakening zone (21), the implementation of a resumption of the epitaxy of diamond, respectively of the III-V material, to thicken said continuous layer (24) of diamond, respectively of the III-V material, monocrystalline.