Chemical polishing process for silicon wafers

Abstract

The invention relates to a chemical polishing process for obtaining a batch of smoothed wafers. It comprises supplying several silicon wafers, each having a cutting face; measuring the diffuse reflectivity of the cutting face of each silicon wafer; selecting a set of wafers from among those supplied having a diffuse reflectivity less than or equal to a predetermined reflectivity threshold; and anisotropic wet etching of the set of wafers along silicon crystal planes to obtain the batch of smoothed wafers. The predetermined reflectivity threshold ensures a compliant deposition of a thin film on the cutting face of each wafer in the batch of smoothed wafers. Figure 1