ELECTRONIC DEVICE AND ELECTRONIC MODULE

By integrating a thermistor with a positive temperature coefficient in series with electronic components, self-heating is controlled, ensuring stable operation and preventing thermal runaway, addressing integration challenges in power electronics.

FR3170190A1Pending Publication Date: 2026-06-19COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Patent Information

Authority / Receiving Office
FR · FR
Patent Type
Applications
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Filing Date
2024-12-17
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing electronic components with negative temperature coefficients face challenges in controlling self-heating, leading to potential thermal runaway and integration issues, particularly in power electronics, where miniaturization is difficult due to the need for large heat sinks.

Method used

Incorporating a thermistor with a positive temperature coefficient in series with the electronic component, thermally coupled to limit current flow and maintain the component's temperature near a setpoint, preventing self-heating by increasing total resistance beyond a setpoint temperature.

Benefits of technology

Effectively limits self-heating and maintains component temperature within safe limits, simplifying design and operation without additional power requirements, and preventing thermal runaway in parallel connections.

✦ Generated by Eureka AI based on patent content.

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Abstract

ELECTRONIC DEVICE AND ELECTRONIC MODULE The invention relates to an electronic device comprising: a component having a resistance (R120) with a negative temperature coefficient, and a temperature control means having an electrical resistance (R130) varying according to the temperature T such that the sum of the total resistance (R) is, over a second temperature sub-range (302), greater than a setpoint temperature (305), strictly greater than the total resistance (R) at the setpoint temperature (305). Figure for the abstract: Fig 3.
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Description

Title of the invention: ELECTRONIC DEVICE AND ELECTRONIC MODULE Technical field

[0001] The technical field of the invention relates to electronic devices such as those that can be used in an electronic circuit for power components. The technical field also relates to assemblies of these devices in the form of electronic modules. STATE OF THE ART

[0002] The document [G. Perez et al., “Diamond semiconductor performances in power electronics applications”, Diamond and Related Materials, Volume 110, 2020, 108154, ISSN 0925-9635, https: / / doi.Org / 10.1016 / j.diamond.2020.108154] describes an electronic component, in particular a Schottky diode made from a wide band gap (WBG) semiconductor material, in this case diamond, as well as the problems of paralleling this type of component.

[0003] The described Schottky diode exhibits, in the conducting state, a non-monotonic temperature-dependent resistance variation with a minimum resistance value at 640 K. Between room temperature and 640 K, the Schottky diode has a negative temperature coefficient (NTC), meaning that its resistance decreases with increasing temperature. Above 640 K, the Schottky diode also has a positive temperature coefficient (PTC), meaning that its resistance increases with temperature.

[0004] The authors indicate that the negative temperature coefficient can give rise to self-heating which causes the Schottky diode to increase its temperature as its resistance decreases, until it reaches an equilibrium temperature around 640 K. This self-heating phenomenon thus makes it possible to benefit from a Schottky diode which, in its conducting state, has a minimum resistance.

[0005] However, for certain electronic components with a negative temperature coefficient, the equilibrium temperature may be too high to allow their integration. For example, this temperature may be much higher than the damage temperature of their protective casing. Therefore, it is necessary to control the maximum temperature reached by the electronic component during operation.

[0006] To control the temperature of a component with a negative temperature coefficient, G. Perez et al. suggest coupling it to a heat sink. In this way, the heat dissipated by the component is removed and self-heating is controlled. The authors note, however, that the size of the heat sink increases as the target operating temperature decreases. Furthermore, the miniaturization of electronic components is difficult to reconcile with an increase in the size of heat sinks. This solution therefore proves to be limited in practice.

[0007] There is therefore a need to provide a means of controlling the temperature of an electronic component with a negative temperature coefficient. SUMMARY

[0008] To achieve this objective, the invention provides for an electronic device comprising an electronic component, said electronic component having a resistance, said resistance having, for a temperature range, a negative temperature coefficient, said temperature range comprising a setpoint temperature dividing said temperature range into two temperature sub-ranges of which: a. a first sub-range of temperatures corresponding to temperatures in the temperature range that are lower than or equal to the setpoint temperature; and b. a second temperature sub-range corresponding to temperatures in the temperature range strictly above the setpoint temperature.

[0009] The electronic device is remarkable in that it includes a thermistor, electrically connected in series with the electronic component and thermally coupled to the electronic component, the thermistor having an electrical resistance varying with temperature such that the total electrical resistance of the electronic device, comprising the sum of the electrical resistance of the electronic component and the electrical resistance of the thermistor, is, on the second temperature sub-range, strictly greater than the total electrical resistance at the setpoint temperature.

[0010] By "thermally coupled elements", it is understood that the thermal resistance of the coupling between the elements is less than or equal to 1 K / W.

[0011] By "thermistor," we mean any type of element that has a resistance with a positive temperature coefficient. For example, a thermistor as such as a thermo-resistor or a semiconductor with a resistance that increases with temperature.

[0012] The electronic component (which can be more simply called a "component") used is, for example, an electronic component such as that described in the document by G. Perez et al. and presented above. The thermistor, connected in series with the component, adds a temperature-variable resistance to the current path through the component. Increasing the thermistor's resistance thus limits the current flowing through the component and therefore limits the heating associated with this current flow.

[0013] In particular, thanks to the increase in total resistance beyond the setpoint temperature, a dichotomy occurs around the setpoint temperature. In this way, the current flowing through the component is limited when its temperature exceeds the setpoint temperature, and its heating is consequently also limited. The self-heating associated with the negative temperature coefficient of the component is therefore limited, or even avoided, and the component temperature is maintained close to the setpoint temperature.

[0014] The passive nature of the thermistor allows for simplified design and implementation of the electronic component. No additional power is required to operate the thermistor. The thermistor's characteristics are determined during its manufacture. Maintenance operations are also simplified because there is no need to calibrate or recalibrate the thermistor. Thus, the electronic device can be used according to a "set and forget" approach.

[0015] Advantageously, the electrical resistance of the thermistor is such that the total resistance of the device is increasing on the second sub-range.

[0016] Advantageously, the electrical resistance of the thermistor on the second temperature sub-range is strictly greater than the electrical resistance of the electronic component at the setpoint temperature.

[0017] Advantageously, the electrical resistance of the thermistor over the first temperature subrange is constant or increasing.

[0018] Advantageously, the electrical resistance of the thermistor over the first temperature subrange is less than or equal to 10% of the electrical resistance of the electronic component at the setpoint temperature.

[0019] Advantageously, the thermal resistance of the thermal coupling between the thermistor and the electronic component is less than or equal to 0.01 K / W.

[0020] Advantageously, the thermistor is glued or soldered or brazed or sintered onto the electronic component.

[0021] Alternatively, the electronic component and the thermistor are made in the same part, for example from the same substrate or the same stack of layers.

[0022] Advantageously, the electronic device comprises an electrically and thermally conductive base, the electronic component being glued or welded or brazed or sintered on the base and the thermistor being glued or welded or brazed or sintered on the base.

[0023] Advantageously, the component is made from diamond.

[0024] In existing solutions, connecting components with a negative temperature coefficient in parallel can promote, or even accelerate, self-heating, or even thermal runaway, of the electronic components, even if they are supposed to be identical. Indeed, there are always manufacturing variations, however small, that make these electronic components different, even slightly. The flow of an electric current through each component according to the prior art initiates self-heating of each component. However, manufacturing variations will lead to greater heating in one of the components. The reduction in resistance caused by self-heating focuses the electric current on the component subject to self-heating. The other component experiences a reduced electric current, which can tend to cool or limit its heating (and increase its resistance in the case of an NTC device).The electric current is then strongly diverted towards one of the components, which can be damaged (either directly or through its integration environment) or age rapidly. This is problematic when two components with a negative temperature coefficient are connected in parallel. This is particularly problematic when these components are integrated into a power electronics circuit. Indeed, the current in a power electronics circuit is generally dictated by the circuit's load. Therefore, the components cannot modulate the current flowing through the circuit to limit heating. They must share the current equally.

[0025] To solve this problem, the invention also provides an electronic module comprising: a. an electronic device according to the invention; and b. one or more additional electronic devices, connected in parallel to said electronic device.

[0026] The parallel connection of a device according to the invention with another electronic device (which is not necessarily a device according to the invention or a component) (featuring a resistance with a negative temperature coefficient) to form a module allows for the control of the self-heating of the electronic device to limit current deviation. Therefore, the module according to the invention is not at risk of damage or accelerated aging.

[0027] Advantageously, the electronic device and said at least one additional electronic device are thermally coupled.

[0028] Advantageously, the electronic module is a power electronic module, at least one of the electronic devices, among the electronic device and said at least one additional electronic device, is made from diamond.

[0029] In a particularly advantageous embodiment, said at least one additional electronic device is also an electronic device according to the invention. In this way, each of the devices according to the invention works to limit the self-heating of a single component and the diversion of current to that single component. BRIEF DESCRIPTION OF THE FIGURES

[0030] Fig. 1 represents a numerical simulation result for an electrical component according to the prior art, said electronic component having a negative temperature coefficient for a temperature range.

[0031] Figures [Fig.2] and [Fig.3] represent first and second numerical simulation results for an electronic device according to the invention.

[0032] Fig. 4 represents schematically a first embodiment of an electronic device according to the invention, said electronic device being shown without and with its protective case.

[0033] Fig. 5 schematically represents a second embodiment of the electronic device according to the invention, said electronic device also being shown without and with its protective housing.

[0034] Figure 6 represents an example of an equivalent electrical diagram of an electronic module according to the invention.

[0035] Figures [Fig.7] and [Fig.8] represent first and second numerical simulation results for electronic modules according to the prior art and according to the invention.

[0036] Fig. 9 schematically represents a first embodiment of an electronic module according to the invention, said electronic module being shown without and with its protective case.

[0037] Figure 10 schematically represents a second implementation method of the electronic module according to the invention.

[0038] The figures are given by way of example and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate the understanding of the invention and are not necessarily at the scale of practical applications. In particular, Figures 1 to 10 are not representative of reality. DETAILED DESCRIPTION

[0039] The invention aims to limit the self-heating of electronic components 120. This invention is advantageously suited to the field of devices adapted to power electronics since this is a field in which component temperatures can be very high.

[0040] An electronic device 100 according to the invention comprises an electronic component 120. This is, for example, a component according to the prior art such as a junction forming a diode or a transistor. More particularly, it may be a Schottky diode made from diamond.

[0041] Component 120 is special in that, for a specific temperature range 300, it exhibits an electrical resistance R120 with a negative temperature coefficient. A "negative temperature coefficient" is defined as an element whose resistance varies negatively with temperature (note that "variation" refers to a continuous change in a value, for example, resistance or temperature). Such an element, in the absence of any control mechanism, is susceptible to self-heating, which in some cases can lead to thermal runaway.

[0042] The electronic device 100 according to the invention is particularly remarkable in that it adds a thermistor 130 to the component 120. This thermistor 130 is configured to limit the self-heating of the component 120.

[0043] Figures 1 and 2 show simulation results for a device 100 according to the invention. Figure 1 shows a result for a device where the thermistor 130 is absent. In other words, Figure 1 represents the behavior of component 120 alone. This result corresponds, for example, to behavior observed in an electronic component according to the prior art. Discussing the behavior of component 120 alone allows us to then assess the benefit of adding the thermistor 130.

[0044] Fig. 2 represents a simulation result for the same device 100 except that the effect of the thermistor 130 is taken into account.

[0045] In Figures 1 and 2, component 120 is modeled as a Schottky diode made of diamond. Diamond is special in that it exhibits a negative temperature coefficient of resistance. Other models could have been used for component 120, such as an aluminum nitride diode (which also exhibits a negative temperature coefficient) or a transistor junction. based on diamond or AlN. The results in Figures 1 and 2 are obtained when component 120 is in a conducting state.

[0046] In [Fig.2], the thermistor 130, also called "thermo-resistor", is modeled by a resistor R130 whose temperature varies according to the temperature.

[0047] The thermistor 130 is electrically connected in series with the component 120. In this way, it carries the current flowing through the component 120. Furthermore, it can limit the current flowing through both elements 120 and 130. The thermistor 130 is also thermally coupled with the component 120 such that the temperature of the thermistor 130 is close to, if not equal to, the temperature of the component 120. By "close to," we mean equal to within 10%, or even within 5%. The thermal coupling between the two elements 120 and 130 is modeled by a thermal resistance less than or equal to 1 K / W. Thus, the temperature increase of the component 120 is reflected in the thermistor 130. A thermal resistance less than or equal to 1 K / W is generally low enough to guarantee a constant thermal equilibrium. However, a lower thermal resistance, for example less than or equal to 0.01 K / W, may be preferred.

[0048] Figure 1 represents the resistance R120 measured across component 120 as a function of temperature. It has a parabolic shape with a minimum around a temperature 303, which we will call the "equilibrium temperature," of approximately 300°C. This is a temperature around which the mechanism leading to the self-heating of the component tends to stabilize. Of course, the actual temperature of component 120 may depend on additional factors, such as the Joule heating losses of component 120, or thermal coupling with a heat sink (or a thermal bath). For a temperature range below the equilibrium temperature 303, the resistance R120 decreases with temperature (in other words, it has a negative slope with respect to temperature).

[0049] Thus, the component 120 has a negative temperature coefficient over a temperature range 300 below the equilibrium temperature 303. Thus, apart from any current regulation or thermal regulation, the component 120, subjected to an electric current, is likely to undergo self-heating until it reaches a minimum electrical resistance R120 and an equilibrium temperature 303.

[0050] Beyond the equilibrium temperature 303, the resistance R120 increases with temperature. In other words, component 120 exhibits a positive temperature coefficient over a temperature range above the equilibrium temperature.

[0051] An example of a so-called "maximum" temperature 304 is shown in [Fig. 1]. This is, for example, a temperature that the component 120 must not exceed. It may be a temperature at which damage could occur or a maximum temperature that a protective housing 160 can withstand. To prevent any deterioration, a so-called "setpoint" temperature 305 can be established. This is a desired operating temperature for the component 120. This setpoint temperature 305 is, for example, determined from the maximum temperature 304 and possibly a temperature margin.

[0052] The temperature range 300 over which component 120 exhibits a negative temperature coefficient therefore includes the maximum temperature 304 and the setpoint temperature 305. The setpoint temperature 305 divides the temperature range 300 into two temperature sub-ranges 301, 302: a. a first temperature subrange 301 comprising all temperatures in the temperature range 300 that are less than or equal to the setpoint temperature 305; and b. a second temperature subrange 302 comprising all temperatures in the temperature range 300 that are strictly above the setpoint temperature 305.

[0053] Figure 2 shows the effect of the thermistor 130 on the thermal behavior of the device 100. The resistance R120 of component 120, illustrated in Figure 1, is shown in Figure 2 for comparison. The resistance R130 of the thermistor 130 alone is also shown in Figure 2 to illustrate the temperature control mechanism. The resistance of the device 100 (as seen by the current flowing through component 120 and the thermistor 130) corresponds to the resistance denoted "R" in Figure 2 and is equal to the sum of the aforementioned resistances R120 and R130.

[0054] The resistance R130 of the thermistor 130 is chosen to vary with temperature such that the total resistance R over the second temperature sub-range 302 is strictly greater than the total resistance R at the setpoint temperature 305. The total resistance R no longer exhibits a negative temperature coefficient over the entire temperature range 300. While it may exhibit a negative temperature coefficient over the first sub-range 301, it does exhibit a positive temperature coefficient over the second sub-range 302. Self-heating is therefore unlikely to occur over the second sub-range 302, which, as a reminder, includes the maximum temperature 304. The setpoint temperature 305 becomes a new equilibrium temperature for the device 100.

[0055] During self-heating, there may be thermal inertia which can act and temporarily increase the temperature of component 120. However, provided that the margin between the setpoint temperature 305 and the maximum temperature 304 is If the temperature of component 120 is sufficient, it does not reach the maximum temperature 304. Eventually, the temperature of device 100 (and therefore of component 120) stabilizes near the setpoint temperature 305.

[0056] In [Fig. 2], the resistance R130 of the thermistor 130 increases over the second temperature sub-range 302. The slope of the resistance R130 is then chosen so as to form, around the setpoint temperature 305, a local minimum of total resistance R. The steeper the slope of the resistance R130, the better the attenuation of self-heating over the second sub-range 302 and the temperature control of the component 120. In the illustrated example, the resistance R130 of the thermistor 130 is monotonic. However, it could be non-monotonic, preferentially always allowing the formation of a local minimum of resistance R around the setpoint temperature 305.

[0057] In the example of [Fig. 2], the resistance R130 of the thermistor 130 has, on the first sub-range 301, a resistance R130 that is low compared to the resistance R120 on the same sub-range 301. The electrical resistance R130 of the thermistor 130 on the first sub-range 301 is, for example, less than or equal to 10% of the electrical resistance R120 of the component 120 on this sub-range 301. Thus, the losses induced by the presence of the thermistor 130 on the electrical path are low or even negligible.

[0058] The resistance R130 of the thermistor 130 can be constant over the first sub-range 1 (as illustrated in [Fig. 2]) or increasing. It can also be decreasing over this sub-range 301 provided that it preferably remains less than or equal to 10% of the electrical resistance R120 of the component 120 over this sub-range 301.

[0059] In the example of [Fig. 2], the resistance R130 of the thermistor 130 shows an increase in resistance R130 from a threshold temperature. This threshold temperature is lower than the setpoint temperature 305. However, the steeper the slope of the resistance R130 of the thermistor 130 is over the second temperature sub-range 302, the weaker the difference between the threshold temperature on the control means 130 and the setpoint temperature 305.

[0060] Figure 3 shows two numerical simulation results obtained from the devices 100 of Figure 1 and Figure 2. In particular, these results illustrate, as a function of time, the temperature and current flowing through component 120 without the thermistor 130 (case of Figure 1) and with the thermistor 130 (case of Figure 2). A reduction in temperature is observed thanks to the temperature control means 130. This temperature reduction is notably due to the current reduction visible in the second graph, where the effect of the thermistor 130 is to limit the total current flowing through component 120.

[0061] Figure 4 schematically represents a first embodiment of an electronic device 100 according to the invention. The electronic device 100 is shown on the left of the figure without its protective housing 160 and on the right of the figure with its protective housing 160.

[0062] In this embodiment, the component 120 is a stack of layers forming, for example, a Schottky junction. This stack of layers comprises, for example, a diamond-based semiconductor layer and a metallic layer. In this example, the thermistor 130 is assembled directly onto the component 120. For example, it is bonded to the anode or cathode of the component 120 using an electrically and thermally conductive adhesive. Such an assembly can be described as "monolithic." This embodiment has the advantage of providing good electrical connection and good thermal coupling (i.e., exhibiting a thermal resistance of less than 0.01 K / W). The thermistor 130 can also be brazed, soldered, or sintered onto the component 120 (on the anode or cathode) to provide better thermal coupling and electrical contact.

[0063] The device 100 may also include two conductive electrodes 111, 112. These electrodes 111, 112 form, for example, contact pins. The component 120 and the thermistor 130 are connected in series between these two conductive electrodes 111, 112. The thermistor 130 is, for example, connected in series between the component 120 and one of the two conductive electrodes 111, 112.

[0064] The device 100 may further include a substrate 140, which may also be called a "base," on which the assembly, comprising the component 120 and the thermistor 130, is fixed. The component 120 or the thermistor 130 is, for example, glued, welded, brazed, or sintered onto the base 140. The base 140 may be conductive, thus allowing the assembly comprising the component 120 and the thermistor 130 to be connected to one of the two conductive electrodes 111, 112. For this purpose, an electrical contact 150, and preferably a mechanical contact, may be established between the base 140 and one of the two electrodes 112.

[0065] The assembly comprising component 120 and thermistor 130 can be connected to the other conductive electrode 111 by means of jumper wires, also known as "wire bonding." The jumper wire(s) then connect said conductive electrode 111 with component 120 (if thermistor 130 is connected to the base 140) or with the thermistor 130 (if component 120 is connected to the base). The conductive electrode 111 connected by means of the jumper wire(s) can be fixed to the base 140 by means of an electrically insulating mechanical contact 151. Thus, the base 140 does not short-circuit component 120.

[0066] The device 100 may include a housing 160, for example supported on the base 140 and enclosing the assembly comprising the component 120 and the thermistor 130.

[0067] Device 100 of [Fig. 5] differs from device 100 of [Fig. 4] in that component 120 and thermistor 130 are not in direct contact. They are electrically connected and thermally coupled by means of the base 140. For this purpose, the base 140 is advantageously electrically and thermally conductive.

[0068] The component 120 is, for example, directly glued, welded, brazed, or sintered onto the base 140. The thermistor 130 can also be directly glued, welded, brazed, or sintered onto the base 140. The distance between the two elements 120 and 130 is such that the thermal coupling has a thermal resistance of less than 1 kΩ and preferably less than 0.01 KΩ. To prevent short-circuiting the component 120 or the thermistor 130, the conductive electrodes 111 and 112 are electrically insulated from the base 140. They can be fixed by means of electrically insulating mechanical contacts 150 and 151. The component 120 can then be connected to one of the electrodes 111 by means of jumper wires 113. The thermistor 130 can be attached to the other electrode 112 by means of additional jumper wires.This embodiment of device 100 has the advantage of being simple to implement because component 120 and thermistor 130 can be mounted independently of each other.

[0069] Figures 6 to 8 represent a parallel arrangement of two devices 100 according to the invention forming an electronic module 200. The two devices 100 according to the invention, even if they are of the same category, are differentiated by the letters A and B.

[0070] Figure 6 schematically represents an embodiment of a module 200, as well as the two devices A and B it comprises. The module 200 is connected to a current source 10. The devices A and B are connected in parallel within the module 200. Thus, the electric current delivered by the source 10 is distributed to each device A and B. The principle remains the same if the current source 10 is replaced by a voltage source. In this case, the current flowing through the module is determined by the devices 100, with the current being distributed between the parallel devices 100.

[0071] In the absence of the thermistors 130, the self-heating of one of the two components 120 can take over and drain a large part, or even all, of the current delivered by the current source 10. This results in heating of the component 120 which can lead to thermal runaway and / or deterioration or, at a minimum, premature aging.

[0072] The effect of the thermistors 130 of devices A and B is described with reference to Figures 7 and 8. These figures represent simulation results for an example of a module 200 according to the invention. Devices A and B are of the same category and are These devices, A and B, are supposed to be identical. However, they exhibit slight deviations in their properties. Device A, for example, has a slightly lower resistance than device B. Figure 6 represents, for each device A and B, and in the same way as Figure 2, the state of said device A and B when the thermistor 130 is taken into account or not.

[0073] For example, in the absence of a control means 130, device A (represented by the square) undergoes self-heating and reduces its resistance until it reaches approximately 200°C. Device A draws a large portion of the electric current, resulting in less self-heating of device B (represented by the triangle). In the simulation leading to the result in [Fig. 7], devices A and B are thermalized by a thermal bath, which limits the temperature reached by device A. However, without sufficient thermalization, device A is then likely to experience a greater temperature increase and thus suffer deterioration or premature aging.

[0074] By taking into account the thermistors 130, each device A, B will adjust its resistance to counteract the current focusing phenomenon in order to maintain an equitable current distribution. Consequently, neither device A, B (represented by the circle and the cross) will experience thermal runaway.

[0075] The effect of the thermistors 130 on each device A, B is also illustrated by [Fig. 8], which shows the temperature and current flowing through devices A and B when the thermistor 130 is deactivated and when it is activated. The temperatures of the two devices A and B are close when the thermistors 130 are active. The temperature of each of devices A and B is slightly higher than the setpoint temperature 305 because the current delivered by the source 10 heats the devices considerably. However, thanks to the thermistors 130, self-heating is contained. The temperatures of devices A and B are closer, showing a better distribution of the current delivered by the source 10 between the two devices A and B. The module 200 according to the invention is therefore less susceptible to deterioration or premature aging.

[0076] Figure 8 shows a better temperature distribution between the two devices A and B when the thermistors are involved. The electric currents flowing in the two devices A and B are also closer together.

[0077] According to one development, the module 200 can comprise at least three devices 100 connected in parallel. The principle of temperature distribution then applies advantageously to this development.

[0078] Figure 9 schematically represents a first embodiment of an electronic module 200 according to the invention. The module 200 is shown on the left of the figure, without its protective case 260 and, on the right of the figure, with its protective case 260.

[0079] In this embodiment, the devices 100 are electrically connected in parallel. For each device 100, the assembly comprising the component 120 and the thermistor 130 is electrically and thermally connected by means of the electrically and thermally conductive base 140. This embodiment is similar to the embodiment shown in [Fig. 4]. The bases of two devices A, B are spaced apart to prevent any electrical contact and thus any short circuit.

[0080] Devices A, B are connected in parallel by means of metallic tracks 221, 222, for example made of copper, also called "busbars". Each device A, B is, for example, connected between the two busbars 221, 222 by means of jumper wires 113.

[0081] The module 200 may also include two conductive electrodes or two groups of conductive electrodes 211, 212 forming the contact lugs of the module 200. Each busbar 221, 222 can then be connected to either of the groups of conductive electrodes 221, 222. The module 200 may also include a support 240 against which the busbars 221, 222 and the devices A, B can extend (for example via their feet 140).

[0082] The module 200 may also include a thermally conductive plate 280 for homogenizing the temperature within the module. This helps to limit the temperature and current dispersion of the electronic devices 100. This thermally conductive plate 280 can be thermally coupled to the support 240. It can also be thermally coupled to a heat sink.

[0083] Module 200 of [Fig. 10] differs from the module of [Fig. 9] in that component 120 and the thermistor of each device A, B form a monolithic assembly, similar to that shown in [Fig. 4]. In this embodiment, components 120 and the thermistors are in direct contact. Thus, it is no longer necessary for the bases of each device A, B to be separate. They can be combined to form a single base. This allows the devices 100 to be thermally coupled to each other. When the devices are identical, this further reduces the temperature difference between components 120 of the two devices, thereby further reducing the current and temperature dispersion of the devices 100.

[0084] The invention is not limited to the embodiments previously described and extends to all embodiments covered by the invention.

Claims

Demands

1. Electronic device (100) comprising an electronic component (120), said electronic component (120) having a resistance (R120), said resistance (R120) having, for a temperature range (300), a negative temperature coefficient, said temperature range (300) comprising a setpoint temperature (305) dividing said temperature range into two temperature sub-ranges of which: • a first temperature sub-range (301) corresponding to the temperatures of the temperature range (300) less than or equal to the setpoint temperature (305);and • a second temperature subrange (302) corresponding to the temperatures of the temperature range (300) strictly above the setpoint temperature (305), the electronic device being characterized in that it comprises a thermistor (130), electrically connected in series with the electronic component (120) and thermally coupled to the electronic component (120), the thermistor (130) comprising an electrical resistance (R130) varying with temperature such that the total electrical resistance (R) of the electronic device (100), comprising the sum of the electrical resistance (R120) of the electronic component (120) and the electrical resistance (R130) of the thermistor (130) is, on the second temperature subrange (302), strictly greater than the total electrical resistance (R) at the setpoint temperature (305).

2. Electronic device (100) according to the preceding claim, wherein the electrical resistance (R130) of the thermistor (130) is such that the total resistance (R) of the device (100) is increasing on the second sub-range (302).

3. Electronic device (100) according to any one of the preceding claims, wherein the electrical resistance (R 130) of the thermistor (130) over the second temperature subrange (302) is strictly greater than the electrical resistance (R120) of the electronic component (120) at the setpoint temperature (305).

4. Electronic device (100) according to any one of the preceding claims, wherein the electrical resistance (R 130) of the thermistor (130) over the first temperature subrange (301) is constant or increasing.

5. Electronic device (100) according to any one of the preceding claims, wherein the electrical resistance (R 130) of the thermistor (130) over the first temperature subrange (301) is less than or equal to 10% of the electrical resistance (R 120) of the electronic component (120) at the setpoint temperature (305).

6. Electronic device (100) according to any one of the preceding claims, wherein the thermal resistance of the thermal coupling between the thermistor (130) and the electronic component (120) is less than or equal to 0.01 K / W.

7. Electronic device (100) according to any one of claims 1 to 6, wherein the thermistor (130) is glued or welded or brazed or sintered onto the component (120).

8. Electronic device (100) according to any one of claims 1 to 6, wherein the electronic component (120) and the thermistor (130) are made in the same part.

9. Electronic device (100) according to any one of the preceding claims, comprising an electrically and thermally conductive base (140), the component (120) being glued or welded or brazed or sintered onto the base (140) and the thermistor (130) being glued or welded or brazed or sintered onto the base (140).

10. Electronic device (100) according to any one of the preceding claims, wherein the component (120) is made from diamond.

11. Electronic module (200) comprising: • an electronic device (100) according to any one of claims 1 to 10; and • at least one additional electronic device, connected in parallel to said electronic device (100).

12. Electronic module (200) according to claim 11, wherein the electronic device (100) and said at least one additional electronic device are thermally coupled.

13. Electronic module (200) according to claim 11 or 12, wherein said at least one electronic device

14. additional (100) is an electronic device (100) according to any one of claims 1 to 10. Electronic module (200) according to any one of claims 11 to 13, wherein the electronic module (200) is a power electronic module, and wherein at least one of the devices, among the electronic device (100) and said at least one additional electronic device, is made from diamond.