Light-emitting display apparatus

By integrating an insulating layer between semiconductor patterns and optimizing electrode placement, the manufacturing process of LED display devices is simplified, enhancing stability and reducing power consumption, thus addressing the complexity and performance issues of TFTs in LED displays.

GB2641943BActive Publication Date: 2026-07-02LG DISPLAY CO LTD
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Patent Information

Authority / Receiving Office
GB · GB
Patent Type
Patents
Current Assignee / Owner
LG DISPLAY CO LTD
Filing Date
2022-11-17
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

The manufacturing process of thin-film transistors (TFTs) in LED display devices is complicated due to the use of different semiconductor patterns, such as polycrystalline silicon and oxide semiconductors, which require separate processes and increase power consumption when displaying still images, leading to leakage currents and screen blurring.

Method used

Incorporating an insulating layer between semiconductor patterns of different types of TFTs, disposing gate electrodes and source/drain electrodes on the same layer, and using blocking layers below TFTs to enhance stability and reduce process complexity.

Benefits of technology

This configuration improves display quality and stability by protecting semiconductor patterns, reducing process complexity, and preventing screen blurring while minimizing power consumption.

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Abstract

A light-emitting display has a flexible substrate 110 with display area including first and second thin-film transistors 200, 300 and storage capacitor 400 in first, second and third regions P1, P2, P
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Citation Information

Patent Citations

  • Display device

    EP3644364A1

  • Display apparatus

    GB2580210A

  • Display device

    US20170338252A1