Light-emitting device and light-emitting apparatus

Abstract

To provide a light-emitting device with high luminous efficiency.SOLUTION: A light-emitting device includes at least a light-emitting layer between an anode and a cathode, the light-emitting layer has at least a light-emitting substance, the light-emitting substance is a substance exhibiting fluorescence emission, and a first organic compound represented by general formula (G1) is present between the anode and the cathode (in general formula (G1), Ar1 represents a substituted or unsubstituted fluorenyl group, Ar2 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and A1 represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to organic compounds. It also relates to light-emitting devices, light-emitting apparatuses, electronic devices, and lighting apparatuses using organic compounds. However, the aspects of the present invention are not limited to the above-mentioned technical fields. The technical fields of the aspects of the invention disclosed herein relate to products, methods, or manufacturing methods. Alternatively, the aspects of the present invention relate to processes, machines, manufacturers, or compositions of matter. Therefore, more specifically, examples of the technical fields of the aspects of the present invention disclosed herein include semiconductor devices, display devices, liquid crystal display devices, light-emitting apparatuses, lighting apparatuses, energy storage devices, memory devices, imaging apparatuses, methods for driving them, or methods for manufacturing them. [Background technology]

[0002] In recent years, research and development of light-emitting devices (also called light-emitting elements) utilizing electroluminescence (EL) has been actively pursued. The basic structure of these light-emitting devices consists of a layer containing a light-emitting material sandwiched between a pair of electrodes. By applying a voltage to this device, light emission can be obtained from the light-emitting material.

[0003] Because these light-emitting devices are self-emissive, they offer advantages such as higher pixel visibility compared to liquid crystal displays and the elimination of the need for a backlight, making them suitable as flat panel display elements. Furthermore, the ability to manufacture such devices in a thin and lightweight form is a significant advantage. Another characteristic is their extremely fast response speed.

[0004] Furthermore, since these light-emitting devices can be formed in a film-like manner, planar light emission can be obtained. Therefore, large-area devices utilizing planar light emission can be easily created. This is a feature that is difficult to obtain with point light sources such as incandescent bulbs and LEDs, or line light sources such as fluorescent lamps, and therefore has high utility as a planar light source that can be applied to lighting and other applications.

[0005] Light-emitting devices that utilize electroluminescence can be broadly classified according to whether the light-emitting material is an organic compound or an inorganic compound. In the case of an organic EL device that uses an organic compound as the light-emitting material and has a layer containing the organic compound between a pair of electrodes, applying a voltage to the device causes electrons from the cathode and holes from the anode to be injected into the layer containing the organic compound, causing an electric current to flow. The injected electrons and holes then excite the organic compound, and light is emitted from the excited organic compound.

[0006] The types of excited states that organic compounds can form include singlet excited states (S * ) and triplet excited state (T * There are two states: fluorescence, where emission from the singlet excited state is called fluorescence, and emission from the triplet excited state is called phosphorescence.

[0007] Regarding such light-emitting devices, there are many material-dependent problems in improving their device characteristics, and efforts are being made to overcome these by improving the device structure and developing new materials. For example, Patent Document 1 discloses carbazole derivatives with high hole transport properties as organic compounds that can be used to form light-emitting devices with high luminescence efficiency. [Prior art documents] [Patent Documents]

[0008] [Patent Document 1] Japanese Patent Publication No. 2009-298767 [Overview of the Initiative] [Problems that the invention aims to solve]

[0009] As described above, in order to improve the characteristics of light-emitting devices, the development of organic compounds with properties suitable for light-emitting devices is desired. One aspect of the present invention aims to provide a novel organic compound that has a low HOMO (Highest Occupied Molecular Orbital) level and hole transport properties. Another aspect of the present invention aims to provide a light-emitting device with high luminescence efficiency by using the novel organic compound according to one aspect of the present invention. Another aspect of the present invention aims to provide a fluorescent light-emitting device with high luminescence efficiency by using the novel organic compound according to one aspect of the present invention. Another aspect of the present invention aims to provide a light-emitting device with low power consumption. [Means for solving the problem]

[0010] One aspect of the present invention is a light-emitting device having at least a light-emitting layer between an anode and a cathode, wherein the light-emitting layer has at least a light-emitting substance, the light-emitting substance is a substance that exhibits fluorescence, and a first organic compound represented by general formula (G1) is between the anode and the cathode.

[0011] [ka]

[0012] In the above general formula (G1), Ar 1 represents a substituted or unsubstituted fluorenyl group, and Ar 2 A represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. 1 This represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. Note that Ar 1 Ar 2 and A 1 If one or more of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0013] In addition, one aspect of the present invention is a light-emitting device having at least a light-emitting layer between an anode and a cathode, the light-emitting layer having at least a light-emitting substance, the light-emitting substance being a substance that exhibits fluorescence, and having a first organic compound represented by the general formula (G2) between the anode and the cathode.

[0014]

Chemical formula

[0015] In the above general formula (G2), Ar 3 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and A 2 represents a substituted or unsubstituted dibenzofuranyl group or a substituted or unsubstituted dibenzothiophenyl group, and R 1 to R 9 each independently represent hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. When either or both of Ar 3 and A 2 have one or more substituents, the substituents are each independently an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 13 carbon atoms. Note that the aryl group does not include a heteroaryl group. Also, the substituents may combine with each other to form a ring.

[0016] In addition, one aspect of the present invention is a light-emitting device having at least a light-emitting layer between an anode and a cathode, the light-emitting layer having at least a light-emitting substance, the light-emitting substance being a substance that exhibits fluorescence, and having a first organic compound represented by the general formula (G3) between the anode and the cathode.

[0017]

Chemical formula

[0018] In the above general formula (G3), X 1 represents oxygen or sulfur, and R 21 and R 22 as well as R 31 to R 37Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 38 ~R 46 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 47 ~R 53 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. Note that heteroaryl groups are not included as aryl groups. Also, R 21 and R 22 R 31 ~R 37 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may be bonded to each other to form a ring.

[0019] Furthermore, one aspect of the present invention has at least a light-emitting layer between the anode and the cathode, the light-emitting layer comprising a light-emitting substance and a first organic compound, wherein the light-emitting substance is a substance that exhibits fluorescence, and the first organic compound is a light-emitting device represented by general formula (G1).

[0020] [ka]

[0021] In the above general formula (G1), Ar 1 represents a substituted or unsubstituted fluorenyl group, and Ar 2 A represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. 1 This represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. Note that Ar 1 Ar 2 and A 1If one or more of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0022] Furthermore, one aspect of the present invention has at least a light-emitting layer between the anode and the cathode, the light-emitting layer comprising a light-emitting substance and a first organic compound, wherein the light-emitting substance is a substance that exhibits fluorescence, and the first organic compound is a light-emitting device represented by general formula (G2).

[0023] [ka]

[0024] In the above general formula (G2), Ar 3 A represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. 2 R represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. 1 ~R 9 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, Ar 3 and A 2 If either or both of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0025] Furthermore, one aspect of the present invention has at least a light-emitting layer between the anode and the cathode, the light-emitting layer comprising a light-emitting substance and a first organic compound, wherein the light-emitting substance is a substance that exhibits fluorescence emission, and the first organic compound is a light-emitting device represented by general formula (G3).

[0026] [ka]

[0027] In the general formula (G3) above, X 1 represents oxygen or sulfur, and R 21 and R 22 R 31 ~R 37 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 38 ~R 46 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 47 ~R 53 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. Note that heteroaryl groups are not included as aryl groups. Also, R 21 and R 22 R 31 ~R 37 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may be bonded to each other to form a ring.

[0028] Furthermore, one aspect of the present invention includes at least a light-emitting layer between an anode and a cathode, and a first layer between the light-emitting layer and the anode, wherein the light-emitting layer has a light-emitting material, the light-emitting material is a material that exhibits fluorescence, and the first layer has a first organic compound, the first organic compound is a light-emitting device represented by general formula (G1).

[0029] [ka]

[0030] In the above general formula (G1), Ar 1 represents a substituted or unsubstituted fluorenyl group, and Ar 2A represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. 1 This represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. Note that Ar 1 Ar 2 and A 1 If one or more of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0031] Furthermore, one aspect of the present invention includes at least a light-emitting layer between an anode and a cathode, and a first layer between the light-emitting layer and the anode, wherein the light-emitting layer has a light-emitting material, the light-emitting material is a material that exhibits fluorescence, and the first layer has a first organic compound, the first organic compound is a light-emitting device represented by general formula (G2).

[0032] [ka]

[0033] In the above general formula (G2), Ar 3 A represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. 2 R represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. 1 ~R 9 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, Ar 3 and A 2 If either or both of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0034] Furthermore, one aspect of the present invention includes at least a light-emitting layer between an anode and a cathode, and a first layer between the light-emitting layer and the anode, wherein the light-emitting layer has a light-emitting material, the light-emitting material is a material that exhibits fluorescence, and the first layer has a first organic compound, the first organic compound is a light-emitting device represented by general formula (G3).

[0035] [ka]

[0036] In the general formula (G3) above, X 1 represents oxygen or sulfur, and R 21 and R 22 R 31 ~R 37 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 38 ~R 46 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 47 ~R 53 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. Note that heteroaryl groups are not included as aryl groups. Also, R 21 and R 22 R 31 ~R 37 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may be bonded to each other to form a ring.

[0037] Furthermore, in one aspect of the present invention, in any one of the above configurations, the first layer is a light-emitting device that is in contact with the light-emitting layer.

[0038] Furthermore, in one aspect of the present invention, in any one of the above configurations, the first layer is a light-emitting device that is in contact with the anode.

[0039] Furthermore, in one aspect of the present invention, in any one of the above configurations, the first organic compound is a light-emitting device represented by any one of structural formulas (100), (101), (105), (136), (200), and (400).

[0040] [ka]

[0041] Furthermore, one aspect of the present invention is a light-emitting device in which, in any one of the above configurations, the difference between the lowest singlet excitation level and the lowest triplet excitation level of the light-emitting material is 0.3 eV or more.

[0042] Furthermore, one aspect of the present invention is a light-emitting device in which, in any one of the above configurations, the light-emitting material is a material that emits blue light.

[0043] Furthermore, one aspect of the present invention is a light-emitting device having a light-emitting device described in any one of the above configurations, and a transistor or a substrate.

[0044] Furthermore, one aspect of the present invention is a light-emitting device comprising a light-emitting device having any one of the above configurations and a light-receiving device, wherein the light-receiving device has a light-receiving layer between a first electrode and a second electrode, and the light-receiving layer has a first organic compound.

[0045] Furthermore, one aspect of the present invention is a light-emitting device comprising any one of the above-described configurations and a light-receiving device, wherein the light-receiving device has a light-receiving layer between a first electrode and a second electrode, the light-receiving layer has at least an active layer, and the active layer has a first organic compound.

[0046] In addition, one aspect of the present invention is a light-emitting device including any one of the above-described configurations and a light-receiving device. The light-receiving device has a light-receiving layer between a first electrode and a second electrode. The light-receiving layer includes at least an active layer and a second layer between the active layer and the first electrode. The second layer includes a first organic compound.

[0047] In addition, one aspect of the present invention is a light-emitting device including any one of the above-described configurations and a light-receiving device. The light-receiving device has a light-receiving layer between a first electrode and a second electrode. The light-receiving layer includes at least an active layer and a first layer between the active layer and the first electrode.

[0048] In addition, one aspect of the present invention is an organic compound represented by general formula (G11).

[0049]

Chemical formula

[0050] In general formula (G11), X 2 represents oxygen or sulfur, and R 103 to R 109 , R 112 to R 118 , and R 119 to R 125 each independently represent hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. R 101 , R 102 , R 110 and R 111 each independently represent hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 13 carbon atoms. Note that R 106 , R 114 , and R 115 represent substituents other than an unsubstituted phenyl group. Further, when R 101 and R 102 are unsubstituted phenyl groups, R 110 and R 111R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 This represents substituents other than methyl groups.

[0051] Furthermore, one aspect of the present invention is an organic compound represented by the general formula (G11).

[0052] [ka]

[0053] In general formula (G11), X 2 represents oxygen or sulfur, and R 103 ~R 109 , R 112 ~R 118 , and R 119 ~R 125 Each independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group, R 101 , R 102 , R 110 , and R 111 Each of these independently represents hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group. 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 This represents substituents other than methyl groups.

[0054] Furthermore, one aspect of the present invention is an organic compound represented by the general formula (G12).

[0055] [ka]

[0056] In general formula (G12), X 3 represents oxygen or sulfur, and R 131 , R 132 , R 141 and R 142 Three or all of these substituents represent the same substituent, which represents hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group, while the others represent hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group. In general formula (G12), some or all of the hydrogens may be deuterium.

[0057] Furthermore, one aspect of the present invention is an organic compound represented by either structural formula (200) or (400).

[0058] [ka]

[0059] Furthermore, one aspect of the present invention is an organic compound represented by the following general formula (G21).

[0060] [ka]

[0061] In general formula (G21), Ar 21 and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22The groups represented by may be bonded to each other to form a ring.

[0062] Moreover, one aspect of the present invention is an organic compound represented by the following general formula (G22).

[0063] [Chemical formula]

[0064] In the general formula (G22), R 201 to R 215 , R 220 to R s<00M0150>, R 230 to R 236 , and R 240 to R 249 each independently represent hydrogen (including deuterium), a bond, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and X 4 s represents sulfur or oxygen. Incidentally, the groups represented by R 244 and R 245 may be directly bonded to each other to form a spirobifluorene ring.

[0065] Moreover, one aspect of the present invention is an organic compound represented by the following general formula (G23).

[0066] [Chemical formula] s

[0067] In the general formula (G23), Ar 21 and Ar 22 each independently represent a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 to R 215 , R 220 to R 226 and R 230 to R 236Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring.

[0068] Furthermore, one aspect of the present invention is an organic compound represented by the following general formula (G24).

[0069] [ka]

[0070] In general formula (G24), Ar 21 and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring.

[0071] Furthermore, one aspect of the present invention is an organic compound represented by the following general formula (G25).

[0072] [ka]

[0073] In the general formula (G25), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , and R 240 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 R represents sulfur or oxygen. 244 and R 245 The groups represented by may directly bond to each other to form a spirobifluorene ring.

[0074] Furthermore, one aspect of the present invention is an organic compound represented by the following general formula (G26).

[0075] [ka]

[0076] In the general formula (G26), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , and R 240 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 R represents sulfur or oxygen. 244 and R 245 The groups represented by may directly bond to each other to form a spirobifluorene ring.

[0077] In addition, one aspect of the present invention is an organic compound represented by the following general formula (G27).

[0078]

Chemical formula

[0079] In general formula (G27), R 201 to R 215 , R 220 to R 226 , R 230 to R 236 , R 240 to R 243 , and R 246 to R 249 each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and X 4 represents sulfur or oxygen.

[0080] In addition, one aspect of the present invention is an organic compound represented by the following general formula (G28).

[0081]

Chemical formula

[0082] In general formula (G28), R 201 to R 215 , R 220 to R 226 , R 230 to R 236 , R 240 to R 243 , and R 246 to R 249 each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms, and X4 This represents sulfur or oxygen.

[0083] Furthermore, one aspect of the present invention is an organic compound in which, in any one of the above configurations, the carbon at position 2 of a dibenzofuranyl group or a dibenzothiophenyl group is bonded to nitrogen.

[0084] Furthermore, one aspect of the present invention is an organic compound in which, in any one of the above configurations, the carbon at position 4 of a dibenzofuranyl group or a dibenzothiophenyl group is bonded to nitrogen.

[0085] Furthermore, in one aspect of the present invention, in any one of the above configurations, X 4 It is an organic compound in which oxygen is present.

[0086] Furthermore, in one aspect of the present invention, in any one of the above configurations, R 240 ~R 244 One of the following, R 245 ~R 249 The organic compound is one in which either a substituted or unsubstituted phenyl group.

[0087] Furthermore, in one aspect of the present invention, in any one of the above configurations, R 240 and R 245 However, it is an organic compound that has a substituted or unsubstituted phenyl group.

[0088] Furthermore, in one aspect of the present invention, in any one of the above configurations, R 242 and R 247 However, it is an organic compound that has a substituted or unsubstituted phenyl group.

[0089] Furthermore, one aspect of the present invention is a light-emitting device using an organic compound described in any one of the above configurations.

[0090] Furthermore, one aspect of the present invention is a light-emitting device having a light-emitting device described in any one of the above configurations, and a transistor or a substrate.

[0091] Furthermore, one aspect of the present invention is an electronic device having a light-emitting device described in any one of the above configurations, and a detection unit, an input unit, or a communication unit.

[0092] Furthermore, one aspect of the present invention is a lighting device having a light-emitting device described in any one of the above configurations and a housing. [Effects of the Invention]

[0093] According to one aspect of the present invention, a novel organic compound having a low HOMO level and hole transport properties can be provided. Furthermore, by using the novel organic compound according to one aspect of the present invention, a light-emitting device with high luminescence efficiency can be provided. Furthermore, by using the novel organic compound according to one aspect of the present invention, a light-emitting device that provides fluorescence emission with high efficiency can be provided. In addition, a light-emitting device, light-emitting apparatus, electronic device, or lighting apparatus with low power consumption can be provided. [Brief explanation of the drawing]

[0094] [Figure 1] Figures 1(A) to 1(C) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 2] Figures 2(A) to 2(E) illustrate the configuration of a light-emitting device according to an embodiment. [Figure 3] Figures 3(A) to 3(D) illustrate a light-emitting device according to an embodiment. [Figure 4] Figures 4(A) to 4(C) illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 5] Figures 5(A) to 5(C) illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 6] Figures 6(A) to 6(C) illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 7] Figures 7(A) to 7(D) illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 8]Figures 8(A) to 8(E) illustrate a method for manufacturing a light-emitting device according to an embodiment. [Figure 9] Figures 9(A) to 9(F) illustrate the apparatus and pixel arrangement according to the embodiment. [Figure 10] Figures 10(A) to 10(C) illustrate the pixel circuit according to the embodiment. [Figure 11] Figure 11 is a diagram illustrating a light-emitting device according to an embodiment. [Figure 12] Figures 12(A) to 12(E) illustrate the electronic device according to the embodiment. [Figure 13] Figures 13(A) to 13(E) illustrate the electronic device according to the embodiment. [Figure 14] Figures 14(A) and 14(B) illustrate an electronic device according to an embodiment. [Figure 15] Figures 15(A) and 15(B) illustrate a lighting device according to an embodiment. [Figure 16] Figure 16 is a diagram illustrating a lighting device according to an embodiment. [Figure 17] Figures 17(A) to 17(C) illustrate the light-emitting device and light-receiving device according to the embodiment. [Figure 18] Figures 18(A) and 18(B) illustrate the light-emitting device and light-receiving device according to the embodiment. [Figure 19] Figure 19 is a diagram illustrating the configuration of a light-emitting device according to an embodiment. [Figure 20] Figures 20(A) and 20(B) show the 1H-NMR spectra of ThFAF(4). [Figure 21] Figures 21(A) and 21(B) show the 1H-NMR spectra of FrFAF(4). [Figure 22] Figure 22 shows the absorption and emission spectra of FrFAF(4) in a toluene solution. [Figure 23] Figure 23 shows the luminance-current density characteristics of light-emitting devices 1 to 3. [Figure 24] Figure 24 shows the current efficiency-luminance characteristics of light-emitting devices 1 to 3. [Figure 25] Figure 25 shows the luminance-voltage characteristics of light-emitting devices 1 to 3. [Figure 26] Figure 26 shows the current-voltage characteristics of light-emitting devices 1 to 3. [Figure 27] Figure 27 shows the external quantum efficiency-luminance characteristics of light-emitting devices 1 to 3. [Figure 28] Figure 28 shows the emission spectra of light-emitting devices 1 to 3. [Figure 29] Figure 29 shows the luminance-current density characteristics of light-emitting devices 4 to 7. [Figure 30] Figure 30 shows the current efficiency-luminance characteristics of light-emitting devices 4 to 7. [Figure 31] Figure 31 shows the luminance-voltage characteristics of light-emitting devices 4 to 7. [Figure 32] Figure 32 shows the current-voltage characteristics of light-emitting devices 4 to 7. [Figure 33] Figure 33 shows the external quantum efficiency-luminance characteristics of light-emitting devices 4 to 7. [Figure 34] Figure 34 shows the emission spectra of light-emitting devices 4 through 7. [Figure 35] Figures 35(A) and 35(B) show the 1H-NMR spectra of Fr(2)FASF(4)-02. [Figure 36] Figure 36 shows the luminance-current density characteristics of light-emitting devices 8 and 9. [Figure 37] Figure 37 shows the current efficiency-luminance characteristics of light-emitting devices 8 and 9. [Figure 38] Figure 38 shows the luminance-voltage characteristics of light-emitting devices 8 and 9. [Figure 39] Figure 39 shows the current-voltage characteristics of light-emitting devices 8 and 9. [Figure 40]Figure 40 shows the external quantum efficiency-luminance characteristics of light-emitting devices 8 and 9. [Figure 41] Figure 41 shows the emission spectra of light-emitting devices 8 and 9. [Figure 42] Figure 42 shows the change in brightness of light-emitting devices 8 and 9 with respect to their operating time. [Modes for carrying out the invention]

[0095] (Embodiment 1) This embodiment describes a light-emitting device that is one aspect of the present invention.

[0096] Figure 1(A) shows the structure of a light-emitting device 100 according to one embodiment of the present invention. As shown in Figure 1(A), the light-emitting device 100 has a structure having a first electrode 101 and a second electrode 102, and an EL layer 103 in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked between the first electrode 101 and the second electrode 102.

[0097] The light-emitting layer 113 has at least a light-emitting material.

[0098] As the luminescent material, a substance that exhibits fluorescence (fluorescent material) can be used. In other words, as the luminescent material, a luminescent material that converts singlet excitation energy into emission can be used. To put it another way, a material that can convert singlet excitation energy into emission and has a difference (ΔE) between the lowest singlet excitation level and the lowest triplet excitation level. ST A light-emitting material having a fluorescence emission of 0.3 eV or higher can be used. This allows the EL layer 103 to exhibit fluorescence emission. Since one embodiment of the present invention has a material that exhibits fluorescence emission, it can also be said to be a fluorescent light-emitting device.

[0099] Furthermore, a material that emits blue light can be used as the light-emitting material. This allows the EL layer 103 to emit blue light. In this specification, a material that emits blue light refers to a light-emitting material that has the maximum peak of its emission spectrum in the wavelength region of 400 nm to 490 nm.

[0100] Specific examples of fluorescent materials will be described in Embodiment 2.

[0101] In a light-emitting device 100 according to one aspect of the present invention, the EL layer 103 has a first organic compound.

[0102] The first organic compound is an aromatic amine having a structure in which a fluorenyl group, an aryl group, and a dibenzofuranyl group or dibenzothiophenyl group are bonded to a nitrogen atom. The first organic compound having such a structure readily accepts holes (possesses hole transport properties). Therefore, by using the first organic compound in the EL layer 103 having a fluorescent substance, the hole injection and hole transport properties into the EL layer 103 can be improved, and thus an improvement in the carrier balance of the EL layer 103 can be expected. As a result, the recombination probability in the EL layer 103 can be increased, and the fluorescent substance can be made to emit light efficiently. Furthermore, by using the first organic compound in a layer of the EL layer 103 that requires, for example, a hole transport material or a material with high hole injection properties, the driving voltage of the light-emitting device 100 can be reduced, and as a result, a light-emitting device 100 with low power consumption can be provided.

[0103] For example, the first organic compound can be used in the hole injection layer 111. The hole injection layer 111 is a layer in contact with the first electrode 101 and requires a material with high hole injection capabilities. For example, by using a combination of the first organic compound and an organic acceptor material (electron-accepting material) in the hole injection layer 111, a material with high hole injection capabilities can be obtained. The organic acceptor material extracts electrons from the first organic compound, generating holes in the hole injection layer 111, which are then injected into the light-emitting layer 113 via the hole transport layer 112. At this time, the first organic compound readily accepts holes because electrons are easily extracted from it. Therefore, the driving voltage of the light-emitting device 100 can be reduced.

[0104] The hole injection layer 111 may be formed as a single layer of a mixed material containing the first organic compound and the organic acceptor material, or it may be formed by laminating the first organic compound and the organic acceptor material in separate layers.

[0105] For example, the first organic compound can be used in the hole transport layer 112. The hole transport layer 112 is a layer in contact with the light-emitting layer 113, and therefore requires a hole-transporting material. By using the first organic compound in the hole transport layer 112, holes injected from the first electrode 101 can be transported to the light-emitting layer 113. Consequently, the driving voltage of the light-emitting device 100 can be reduced.

[0106] For example, the first organic compound can be used in the light-emitting layer 113. As described above, the light-emitting layer 113 has at least a light-emitting substance. That is, the light-emitting layer 113 can be used in combination with the light-emitting substance and the first organic compound. Since the first organic compound has excellent hole transport properties, when used in combination with an electron-transporting material in particular, it becomes easier to adjust the carrier balance in the light-emitting layer, and the luminous efficiency of the light-emitting device 100 can be improved. In addition, it is expected that the hole injection properties into the light-emitting layer will be improved, so the driving voltage of the EL light-emitting device can be reduced, and as a result, a low-power EL light-emitting device can be provided.

[0107] Furthermore, the layer in which the first organic compound can be used is not limited to the EL layer 103, the hole injection layer 111, the hole transport layer 112, or the light-emitting layer 113; the first organic compound can be used in any layer between the first electrode 101 and the second electrode 102.

[0108] In addition, a layer having the first organic compound may be formed on the second electrode 102, depending on the circumstances.

[0109] Furthermore, the layer in which the first organic compound can be used is not limited to the EL layer of a light-emitting device; for example, the first organic compound can be used in the photodetector layer of a photodetector. By using the first organic compound in the photodetector layer of a photodetector, hole injection and hole transport properties into the photodetector layer can be improved. For example, the first organic compound can be used in the active layer, hole injection layer, or hole transport layer of a photodetector.

[0110] Details of the configuration of the photodetector capable of using the first organic compound will be described later in Embodiments 2 and 8.

[0111] As a specific example of the first type of organic compound, an organic compound represented by the following general formula (G1) can be mentioned.

[0112] [ka]

[0113] In the above general formula (G1), Ar 1 represents a substituted or unsubstituted fluorenyl group, Ar 2 This represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and A 1 This represents a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. Note that Ar 1 Ar 2 and A 1If one or more of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0114] Furthermore, a specific example of the first organic compound is the organic compound represented by the following general formula (G2).

[0115] [ka]

[0116] In the above general formula (G2), Ar 3 This represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and A 2 R represents either a substituted or unsubstituted dibenzofuranyl group, or a substituted or unsubstituted dibenzothiophenyl group. 1 ~R 9 represents hydrogen (including deuterium), or an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, Ar 3 and A 2 If either or both of the elements have one or more substituents, each substituent is independently a C1 to C4 alkyl group or a C6 to C13 aryl group. Note that heteroaryl groups are not included as aryl groups. Furthermore, substituents may bond to each other to form a ring.

[0117] Note that R in the above general formula (G2) 1 ~R 9Specific examples of C1 to C4 alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, and tert-butyl groups, while specific examples of C6 to C13 aryl groups include phenyl, tolyl, xylyl, mesityl, biphenyl, naphthyl, and fluorenyl groups. Furthermore, as described above, at least two substituents may bond to form a ring; for example, the spirobifluorenyl group is considered to be a ring formed by the bonding of substituents (i.e., in the 9,9-diphenylfluorenyl group, the spirobifluorenyl group is formed when two phenyl groups bond to form a ring).

[0118] Note that Ar in the above general formula (G1) 2 , Ar of the above general formula (G2) 3 Specific examples include the substituents shown in structural formulas (1-1) to (1-11). Structural formulas (1-7) to (1-11) are Ar 2 , and Ar 3 This is a specific example of a compound having substituents, and structural formula (1-10) shows a structure in which substituents are bonded together to form a ring.

[0119] [ka]

[0120] Note that Ar in the above general formula (G1) 1 and Ar 2 Furthermore, Ar of general formula (G2) 3 and Ar 4However, specific examples of substituents in the case of substituents include C1 to C4 alkyl groups, such as methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, and tert-butyl groups, and specific examples of C6 to C13 aryl groups include phenyl, tolyl, xylyl, mesityl, biphenyl, naphthyl, and fluorenyl groups. Furthermore, as mentioned above, substituents may bond to each other to form a ring; for example, the spirobifluorenyl group is considered to be a ring formed by the bonding of substituents (i.e., in the 9,9-diphenylfluorenyl group, the spirobifluorenyl group is formed when two phenyl groups bond to each other to form a ring).

[0121] Note that Ar in the above general formula (G1) 2 , Ar of the above general formula (G2) 3 It is more preferable to use the substituents shown in the above-mentioned structural formulas (1-4). This allows Ar 2 or Ar 3 This is expected to reduce the planarity of the lone pair electrons on nitrogen, making it more difficult for conjugation to spread and increasing the electron density on nitrogen. Therefore, the hole transportability of the first organic compound can be improved, which in turn can reduce the driving voltage of the light-emitting device 100. Furthermore, by suppressing the rise in the deposition temperature of the first organic compound, a stable film can be formed by the deposition method. In addition, it is expected that the heat resistance of the light-emitting device 100 will be improved. Moreover, it is expected that the reliability of the light-emitting device 100 will be improved.

[0122] Furthermore, a specific example of the first organic compound is the organic compound represented by the following general formula (G3).

[0123] [ka]

[0124] In the general formula (G3) above, X 1 represents oxygen or sulfur, and R 21 and R 22 R31 ~R 37 Each independently represents hydrogen (including deuterium), or an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 38 ~R 46 Each independently represents hydrogen (including deuterium), or an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 47 ~R 53 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. Note that heteroaryl groups are not included as aryl groups. Also, R 21 and R 22 R 31 ~R 37 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may be bonded to each other to form a ring.

[0125] Furthermore, a specific example of the first organic compound is the organic compound represented by the following general formula (G4).

[0126] [ka]

[0127] In the above general formula (G4), X represents oxygen or sulfur, and R 21 and R 22 R 31 ~R 37 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 38 ~R 46 Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms, R 47 ~R 53Each of these independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. Note that heteroaryl groups are not included as aryl groups. Also, R 21 and R 22 R 31 ~R 37 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may be bonded to each other to form a ring.

[0128] General formula (G4) differs from general formula (G3) in that the bond position of the biphenyl group to nitrogen is limited to the ortho position. This is expected to reduce the planarity of the lone pair electrons between the biphenyl group and nitrogen, making conjugation less likely to spread and increasing the electron density on nitrogen. Consequently, the hole transport properties of the first organic compound can be improved, thereby reducing the driving voltage of the light-emitting device 100. Furthermore, the rise in the deposition temperature of the first organic compound can be suppressed, allowing for the formation of a stable film by the deposition method. In addition, it is expected that the heat resistance of the light-emitting device 100 will be improved. Moreover, it is expected that the reliability of the light-emitting device 100 will be improved.

[0129] In addition, in the above general formulas (G3) and (G4), R 21 and R 22 , R 31 ~R 37 , R 38 ~R 46 , R 47 ~R 53 Specific examples of C1 to C4 alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, and tert-butyl groups, while specific examples of C6 to C13 aryl groups include phenyl, tolyl, xylyl, mesityl, biphenyl, naphthyl, and fluorenyl groups. Furthermore, as mentioned above, R21 and R 22 R 31 ~R 37 At least two of the groups represented by may bond to each other to form a ring; for example, the spirobifluorenyl group is considered to be formed by the bonding of these groups to form a ring (that is, in the 9,9-diphenylfluorenyl group, the spirobifluorenyl group is formed by the bonding of two phenyl groups to form a ring). Also, R 38 ~R 46 At least two of the groups represented by may be bonded to each other to form a ring. Also, R 47 ~R 53 At least two of the groups represented by may bond to each other to form a ring. For example, the 9,9-dimethylfluorenyl group, the 9,9-diphenylfluorenyl group, and the spirobifluorenyl group are R 38 And, R 43 ~R 46 It is considered that one of the following is bonded with to form a fluorene ring.

[0130] Next, specific examples of organic compounds that have the configurations represented by the above general formulas (G1) to (G4) and represent one aspect of the present invention are shown below.

[0131] [ka]

[0132] [ka]

[0133] [ka]

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[0160] The organic compounds represented by the above structural formulas (100) to (161), (200) to (319), (400) to (519), and (600) to (620) are examples of organic compounds represented by the above general formulas (G1) to (G4), but the organic compounds that can be used in a light-emitting device according to one aspect of the present invention are not limited to these.

[0161] Furthermore, a specific example of the first organic compound is the organic compound represented by the following general formula (G11). Note that the applications of the organic compound represented by the following general formula (G11) are not limited to the light-emitting device of the embodiment of the present invention described above. The organic compound represented by general formula (G11) has a low HOMO level and possesses hole transport properties, making it suitable for use in various types of light-emitting devices.

[0162] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G11).

[0163] [ka]

[0164] In general formula (G11), X 2 represents oxygen or sulfur, and R 103 ~R 109 , R 112 ~R118 , and R 119 ~R 125 Each independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group, R 101 , R 102 , R 110 and R 111 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group. 106 , R 114 , and R 115 R represents substituents other than the unsubstituted phenyl group. 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 This represents substituents other than methyl groups.

[0165] Alternatively, in general formula (G11), X 2 represents oxygen or sulfur, and R 103 ~R 109 , R 112 ~R 118 , and R 119 ~R 125 R represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group. 101 , R 102 , R 110 , and R 111 R represents hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group. 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group,101 and R 102 This represents substituents other than methyl groups.

[0166] In addition, in the general formula (G11), R 106 , R 114 , and R 115 If the fluorene skeleton has a phenyl group, that is, if it has a phenyl group at the 4th or 5th position, it becomes less likely to accept holes, so it is preferable to have no substituents or substituents other than a phenyl group.

[0167] Furthermore, if the general formula (G11) simultaneously contains both a diphenylfluorene skeleton and a dimethylfluorene skeleton, the synthesis method becomes more complex, potentially increasing costs. For example, by-products such as compounds containing two diphenylfluorene skeletons or compounds containing two dimethylfluorene skeletons may be produced, making high purity difficult. Therefore, in the general formula (G11), R 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 It is preferable that R be a substituent other than a methyl group, and 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 It is preferable that the substituent is something other than a methyl group.

[0168] Note that R in the above general formula (G11) 103 ~R 109 , R 112 ~R 118 , and R 119 ~R 125Specific examples of C1 to C6 alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, and tert-butyl groups, while specific examples of C6 to C13 aryl groups include phenyl, tolyl, xylyl, mesityl, biphenyl, naphthyl, and fluorenyl groups. Furthermore, at least two substituents may bond to each other to form a ring; for example, the spirobifluorenyl group is considered to be a ring formed by the bonding of substituents (i.e., in the 9,9-diphenylfluorenyl group, the spirobifluorenyl group is formed by the bonding of two phenyl groups to form a ring).

[0169] Furthermore, a specific example of the first organic compound is the organic compound represented by the following general formula (G12). Note that the applications of the organic compound represented by the following general formula (G12) are not limited to the light-emitting device of the embodiment of the present invention described above. The organic compound represented by general formula (G12) has a low HOMO level and hole transport properties, and is an organic compound that can be suitably used in various types of light-emitting devices.

[0170] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G12).

[0171] [ka]

[0172] In general formula (G12), X 3 represents oxygen or sulfur, and R 131 , R 132 , R 141 and R 142 Three or all of these substituents represent the same substituent, which represents hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group, while the others represent hydrogen (including deuterium), a methyl group, or an unsubstituted phenyl group. In general formula (G12), some or all of the hydrogens may be deuterium.

[0173] In addition, in the general formula (G12), R 131 , R 132 , R 141 and R 142 It is preferable that all of the substituents are the same, as this makes production easier and facilitates high-purity production. Also, R 131 , R 132 , R 141 and R 142 If three of the substituents are identical and the others are different, then the resulting fluorene ring will have two distinct substituent combinations bonded to the same carbon atom at position 9, which is expected to yield a highly heat-resistant organic compound. As a result, a highly heat-resistant organic device can be provided.

[0174] Note that specific examples of the configurations represented by the above general formulas (G11) and (G12) are included in the specific examples of the configurations represented by the above general formulas (G1) to (G4). Specific examples of the configurations represented by the above general formulas (G11) and (G12) are extracted from the specific examples of the configurations represented by the above general formulas (G1) to (G4) and are shown below.

[0175] [ka]

[0176] [ka]

[0177] [ka]

[0178] [ka]

[0179] The organic compounds represented by the above structural formulas are specific examples of the configurations represented by general formulas (G11) and (G12), selected from specific examples of the configurations represented by general formulas (G1) to (G4). However, the organic compounds that constitute one aspect of the present invention are not limited to these.

[0180] Next, an embodiment of the present invention, a method for synthesizing an organic compound represented by the following general formula (G11), will be described.

[0181] [ka]

[0182] In general formula (G11), X 2 represents oxygen or sulfur, and R 103 ~R 109 , R 112 ~R 118 , and R 119 ~R 125 Each independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group, R 101 , R 102 , R 110 and R 111 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group. 106 , R 114 , and R 115 R represents substituents other than the unsubstituted phenyl group. 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 This represents substituents other than methyl groups.

[0183] The following are synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), synthesis schemes (A-7) and (A-8) for an organic compound that is an embodiment of the present invention represented by general formula (G11). The organic compound that is an embodiment of the present invention represented by general formula (G11) can be synthesized by selecting any of the synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), and synthesis schemes (A-7) and (A-8).

[0184] [ka]

[0185] [ka]

[0186] [ka]

[0187] [ka]

[0188] In addition, in synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), synthesis schemes (A-7) and (A-8), X 2 represents oxygen or sulfur, and R 103 ~R 109 , R 112 ~R 118 , and R 119 ~R 125 R represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group. 101 , R 102 , R 110 and R 111R represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, or a substituted or unsubstituted C6 to C13 aryl group. 106 , R 114 , and R 115 R represents substituents other than the unsubstituted phenyl group. 101 and R 102 If R is an unsubstituted phenyl group, 110 and R 111 R represents substituents other than methyl groups. 110 and R 111 If R is an unsubstituted phenyl group, 101 and R 102 X represents substituents other than methyl groups. 11 ~X 13 This represents a halogen or trifluoromethanesulfonic acid group, preferably chlorine, bromine, or iodine.

[0189] As shown in the above synthesis schemes (A-1) and (A-2), a secondary amine can be obtained by a coupling reaction between a fluorene compound having an amino group and a fluorene compound having a halogen or trifluoromethanesulfonic acid group. Then, the target product represented by general formula (G11) can be obtained by a coupling reaction between the secondary amine compound and a dibenzofuran compound having a halogen or trifluoromethanesulfonic acid group or a dibenzothiophene compound having a halogen or trifluoromethanesulfonic acid group.

[0190] Furthermore, as shown in the synthesis schemes (A-3) and (A-4) above, a secondary amine can be obtained by a coupling reaction between a fluorene compound having a halogen or trifluoromethanesulfonic acid group and a fluorene compound having an amino group. Subsequently, the target product represented by general formula (G11) can be obtained by a coupling reaction between the secondary amine compound and a dibenzothiophene compound having a halogen or trifluoromethanesulfonic acid group.

[0191] Furthermore, as shown in the synthesis schemes (A-5) and (A-6) above, a secondary amine can be obtained by a coupling reaction between a dibenzofuran compound having an amino group or a dibenzothiophene compound having an amino group and a fluorene compound having a halogen or trifluoromethanesulfonic acid group. Subsequently, the target product represented by general formula (G11) can be obtained by a coupling reaction between the secondary amine compound and a fluorene compound having a halogen or trifluoromethanesulfonic acid group.

[0192] Furthermore, as shown in the synthesis schemes (A-7) and (A-8) above, a secondary amine can be obtained by a coupling reaction between a dibenzofuran compound having an amino group or a dibenzothiophene compound having an amino group and a fluorene compound having a halogen or trifluoromethanesulfonic acid group. Subsequently, the target product represented by general formula (G11) can be obtained by a coupling reaction between the secondary amine compound and a fluorene compound having a halogen or trifluoromethanesulfonic acid group.

[0193] As shown in synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), and synthesis schemes (A-7) and (A-8), the target product represented by general formula (G11) can be obtained regardless of the order in which the coupling is performed, thus allowing for the selection of any raw materials.

[0194] In synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), and synthesis schemes (A-7) and (A-8), when performing the Buchwald-Hartwig reaction using a palladium catalyst, bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(0), allylpalladium(II) chloride (dimer) Palladium compounds such as the above and ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, (S)-(6,6'-dimethoxybiphenyl-2,2'-diyl)bis(diisopropylphosphine) (abbreviation: cBRIDP), and 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene can be used. Organic bases such as sodium tert-butoxide or inorganic bases such as potassium carbonate, cesium carbonate, and sodium carbonate can be used in this reaction. Toluene, xylene, benzene, tetrahydrofuran, and dioxane can be used as solvents in this reaction. The reagents that can be used in this reaction are not limited to the above reagents. Furthermore, compounds in which an organotin group is bonded to an amino group can be used in place of compounds containing an amino group.

[0195] Furthermore, in synthesis schemes (A-1) and (A-2), synthesis schemes (A-3) and (A-4), synthesis schemes (A-5) and (A-6), and synthesis schemes (A-7) and (A-8), the Ullmann reaction can also be carried out using copper or a copper compound. Examples of bases used include inorganic bases such as potassium carbonate. Suitable solvents for this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)pyrimidinone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, a reaction temperature of 100°C or higher yields the target product in a shorter time and with higher yield; therefore, it is preferable to use DMPU or xylene, which have high boiling points. A higher reaction temperature of 150°C or higher is even more preferable, and therefore, DMPU is more preferably used. The reagents that can be used in this reaction are not limited to those mentioned above.

[0196] As described above, an organic compound according to one embodiment of the present invention, represented by general formula (G11), can be synthesized. However, the organic compound having an amino group that serves as a raw material for synthesis can be synthesized according to the following synthesis schemes (A-9) and (A-10).

[0197] [ka]

[0198] In synthesis schemes (A-9) and (A-10), R 103 ~R 109 This is the same as the general formula (G11), and X 11 This is the same as the synthesis schemes (A-1), (A-5), and (A-8).

[0199] In synthesis scheme (A-9), when performing a coupling reaction using a palladium catalyst, palladium compounds such as bis(dibenzylideneacetone)palladium(O), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(O), and allylpalladium(II) chloride (dimer) can be used, along with ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, cBRIDP, and 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene. In this reaction, organic bases such as sodium tert-butoxide, or inorganic bases such as potassium carbonate, cesium carbonate, or sodium carbonate can be used. Toluene, xylene, benzene, tetrahydrofuran, dioxane, etc., can be used as solvents in this reaction. The reagents that can be used in this reaction are not limited to those mentioned above. Furthermore, compounds in which an organotin group is bonded to an amino group can be used in place of compounds containing an amino group.

[0200] Furthermore, in synthesis scheme (A-9), an Ullmann reaction using copper or a copper compound can also be carried out. Examples of bases that can be used include inorganic bases such as potassium carbonate. Examples of solvents that can be used in this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)pyrimidinone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, a reaction temperature of 100°C or higher allows for faster and higher yield acquisition of the target product; therefore, it is preferable to use DMPU or xylene, which have high boiling points. Furthermore, a reaction temperature of 150°C or higher is even more preferable, and therefore, DMPU is more preferably used. The reagents that can be used in this reaction are not limited to those mentioned above.

[0201] When performing the hydrolysis reaction shown in the synthesis scheme (A-10), if an acid is used, an acid that does not have a dehydrating effect, such as trifluoroacetic acid, trifluoromethanesulfonic acid, acetic acid, hydrochloric acid, or hydrobromic acid, is preferably used. If a base is used, an aqueous solution of sodium hydroxide or an aqueous solution of potassium hydroxide can be used.

[0202] The organic compounds having an amino group shown in synthesis schemes (A-1), (A-3), (A-5), and (A-7) can be synthesized using the same reactions as in synthesis schemes (A-9) and (A-10), and can be aminated as shown in synthesis schemes (A-11) and (A-12) below. The amination shown in synthesis schemes (A-11) and (A-12) can be synthesized using the same synthetic method as the reactions shown in synthesis schemes (A-9) and (A-10).

[0203] [ka]

[0204] The above describes an example of a method for synthesizing an organic compound, which is one aspect of the present invention. However, the present invention is not limited thereto, and the compound may be synthesized by any other method.

[0205] Furthermore, specific examples of the first organic compound include organic compounds represented by the following general formulas (G21) to (G28). Note that the applications of the organic compounds represented by the following general formulas (G21) to (G28) are not limited to the light-emitting device according to the above-described embodiment of the present invention. The organic compounds represented by general formulas (G21) to (G28) have a low HOMO level and possess hole transport properties, making them suitable for use in various types of light-emitting devices.

[0206] The organic compounds represented by the following general formulas (G21) to (G28) contain a spirobifluorenyl group. The presence of the spirobifluorenyl group allows for a higher Tg (glass transition temperature), thereby improving heat resistance. Furthermore, by structuring the spirobifluorenyl group so that the carbon atom at position 4 is bonded to an amine (nitrogen), it is possible to create organic compounds with high heat resistance and stable film properties. This also makes it possible to improve the heat resistance of light-emitting devices using such organic compounds.

[0207] Furthermore, by changing the substitution positions of each substituent, the organic compounds represented by the following general formulas (G21) to (G28) allow for the control of either the HOMO level or carrier transport properties, or both. Therefore, it is possible to provide organic compounds with optimal HOMO levels and hole transport properties for light-emitting devices.

[0208] Furthermore, as described above, one aspect of the present invention is an organic compound represented by the following general formula (G21).

[0209] [ka]

[0210] In general formula (G21), Ar 21 and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22The groups represented by may bond to each other to form a ring.

[0211] Organic compounds with such molecular structures have a low HOMO level and high hole transportability, so when used in light-emitting devices, they can provide light-emitting devices with low operating voltage and low power consumption. Furthermore, they can provide highly reliable devices. Additionally, by using a novel organic compound according to one aspect of the present invention, a light-emitting device with high luminescence efficiency can be provided.

[0212] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G22).

[0213] [ka]

[0214] In the general formula (G22), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , and R 240 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 R represents sulfur or oxygen. 244 and R 245 The groups represented by may directly bond to each other to form a spirobifluorene ring.

[0215] Organic compounds with such molecular structures have a low HOMO level and high hole transportability, so when used in light-emitting devices, they can provide light-emitting devices with low operating voltage and low power consumption. Furthermore, they can provide highly reliable devices. Additionally, by using a novel organic compound according to one aspect of the present invention, a light-emitting device with high luminescence efficiency can be provided.

[0216] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G23).

[0217] [ka]

[0218] In general formula (G23), Ar 21 and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring.

[0219] By creating an organic compound with this molecular structure, the planarity of the lone pair electrons between the fluorenyl group and nitrogen is improved, making it easier for conjugation to spread. As a result, the HOMO level of the organic compound can be raised compared to molecular structures in which nitrogen is bonded to a substitution position other than the 2nd position of the fluorenyl group.

[0220] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G24).

[0221] [ka]

[0222] In general formula (G24), Ar 21and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring.

[0223] By creating an organic compound with this molecular structure, the planarity of the lone pair electrons between the fluorenyl group and nitrogen is reduced, making it difficult for conjugation to spread. As a result, the HOMO level of the organic compound can be lowered compared to molecular structures in which nitrogen is bonded to a substitution position other than the 4th position of the fluorenyl group.

[0224] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G25).

[0225] [ka]

[0226] In the general formula (G25), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , and R 240 ~R 249Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 R represents sulfur or oxygen. 244 and R 245 The groups represented by may directly bond to each other to form a spirobifluorene ring.

[0227] By creating an organic compound with this molecular structure, the planarity of the lone pair electrons between the fluorenyl group and nitrogen is improved, making it easier for conjugation to spread. As a result, the HOMO level of the organic compound can be raised compared to molecular structures in which nitrogen is bonded to a substitution position other than the 2nd position of the fluorenyl group. Furthermore, by creating a molecular structure in which two phenyl groups are substituted at the 9th position of fluorene, it is possible to increase the hole mobility, and when used in light-emitting devices, it is possible to provide light-emitting devices with low operating voltage and low power consumption.

[0228] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G26).

[0229] [ka]

[0230] In the general formula (G26), R 201 ~R 215 , R 220 ~R 226 、 R 230 ~R 236 , and R 240 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4R represents sulfur or oxygen. 244 and R 245 The groups represented by may directly bond to each other to form a spirobifluorene ring.

[0231] By creating an organic compound with this molecular structure, the planarity of the lone pair electrons between the fluorenyl group and nitrogen is reduced, making it difficult for conjugation to spread. As a result, the HOMO level of the organic compound can be lowered compared to molecular structures in which nitrogen is bonded to a substitution position other than the 4th position of the fluorenyl group. Furthermore, by creating a molecular structure in which two phenyl groups are substituted at the 9th position of fluorene, it is possible to increase the hole mobility, and when used in light-emitting devices, it is possible to provide light-emitting devices with low operating voltage and low power consumption.

[0232] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G27).

[0233] [ka]

[0234] In the general formula (G27), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , R 240 ~R 243 , and R 246 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 This represents sulfur or oxygen.

[0235] Furthermore, by creating an organic compound with such a molecular structure, the planarity of the fluorenyl group is improved, which expands the conjugation at the fluorenyl group and allows for a higher HOMO level of the organic compound.

[0236] Furthermore, having a structure with two spirobifluorenyl groups in this way is preferable because it further improves the heat resistance of the organic compound.

[0237] As described above, one aspect of the present invention is an organic compound represented by the following general formula (G28).

[0238] [ka]

[0239] In the general formula (G28), R 201 ~R 215 , R 220 ~R 226 , R 230 ~R 236 , R 240 ~R 243 , and R 246 ~R 249 Each independently represents hydrogen (including deuterium), a bond, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 This represents sulfur or oxygen.

[0240] By creating an organic compound with this molecular structure, the planarity of the lone pair electrons between the fluorenyl group and nitrogen is reduced, making it difficult for conjugation to spread. As a result, the HOMO level of the organic compound can be lowered compared to molecular structures in which nitrogen is bonded to a substitution position other than the 4th position of the fluorenyl group.

[0241] Furthermore, having a structure with two spirobifluorenyl groups in this way is preferable because it further improves the heat resistance of the organic compound.

[0242] In addition, in the above general formulas (G21) to (G28), it is preferable that the carbon at position 2 of the dibenzofuranyl group or dibenzothiophenyl group is bonded to nitrogen.

[0243] By creating an organic compound with such a molecular structure, intramolecular steric hindrance is reduced, and the conjugation between the dibenzofuranyl group or dibenzothiophenyl group and nitrogen becomes more expansive, allowing for a higher HOMO level. Furthermore, hole transport (mobility) can be improved, enabling the provision of devices with low drive voltages. As a result, low-power electronic devices can be provided.

[0244] Furthermore, in the above general formulas (G21) to (G28), it is preferable that the carbon at position 4 of the dibenzofuranyl group or dibenzothiophenyl group is bonded to nitrogen.

[0245] By creating organic compounds with such molecular structures, it is possible to provide devices that are low in power and highly reliable.

[0246] In addition, in the above general formulas (G21) to (G28), X 4 It is preferable that the molecule is an organic compound in which oxygen is present. By adopting such a molecular structure, it is possible to create an organic compound with a low refractive index, making it possible to provide a device with high luminescence efficiency.

[0247] Furthermore, in the above general formulas (G22), (G25), and (G26), R 240 ~R 244 One of the following, R 245 ~R 249 Preferably, the organic compound is one in which either a substituted or unsubstituted phenyl group. Such a molecular structure is expected to result in an organic compound with very high hole mobility. Furthermore, using these compounds makes it possible to provide devices with low drive voltage and low power consumption.

[0248] Furthermore, in the above general formulas (G22), (G25), and (G26), R 240 and R 245 However, it is preferable that each of these is an organic compound with substituted or unsubstituted phenyl groups. Such a molecular structure is expected to result in an organic compound with very high hole mobility and excellent heat resistance. Furthermore, using these compounds can provide devices with low drive voltage, low power consumption, and high reliability.

[0249] Furthermore, in the above general formulas (G22), (G25), and (G26), R 242 and R 247 However, it is preferable that the organic compound is a substituted or unsubstituted phenyl group.

[0250] In the above general formulas (G22), (G25), and (G26), R 240 ~R 244 One of the following, R 245 ~R 249 By replacing either one of the following with a substituted or unsubstituted phenyl group, R 240 and R 245 The planarity around the molecule is increased. This makes it possible to improve hole transport. By adopting such a molecular structure, it is expected that an organic compound with excellent heat resistance can be obtained, and an organic compound with stable film properties can be provided. Furthermore, by using these, it is possible to provide devices with low driving voltage and low power consumption. In addition, it is expected that a highly reliable device can be provided.

[0251] In addition, specific examples of alkyl groups having 1 to 6 carbon atoms in the above general formulas (G21) to (G28) include, for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, isobutyl group, tert-butyl group, and the like.

[0252] Furthermore, specific examples of substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms in the above general formulas (G21) to (G28) include, for example, a cyclopropyl group, a cyclobutyl group, a cyclohexyl group, and the like.

[0253] Furthermore, in the above general formulas (G21) to (G28), examples of substituents shown in structural formulas (Ar-1) to (Ar-80) include the aryl group having 6 to 30 carbon atoms and the heteroaryl group having 2 to 30 carbon atoms. However, the aryl group having 6 to 30 carbon atoms and the heteroaryl group having 2 to 30 carbon atoms that can be used in general formulas (G21) to (G28) are not limited to the substituents shown in structural formulas (Ar-1) to (Ar-80).

[0254] [ka]

[0255] [ka]

[0256] [ka]

[0257] The substituents represented by the above structural formulas (Ar-1) to (Ar-80) are examples of aryl groups having 6 to 30 carbon atoms and heteroaryl groups having 2 to 30 carbon atoms, but the aryl groups having 6 to 30 carbon atoms and heteroaryl groups having 2 to 30 carbon atoms that can be used in the above general formulas (G21) to (G28) are not limited to these.

[0258] Specific examples of cases where the above-mentioned C1-C6 alkyl groups, C3-C10 cycloalkyl groups, C6-C30 aryl groups, and C2-C30 heteroaryl groups have substituents include C1-C7 alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, and hexyl groups, C5-C7 cycloalkyl groups such as cyclopentyl, cyclohexyl, cycloheptyl, and 8,9,10-trinorbornyl groups, and C6-C12 aryl groups such as phenyl, naphthyl, and biphenyl groups.

[0259] Also, as mentioned above, Ar 21 and Ar 22 The bonds may combine to form a ring; for example, the spirobifluorenyl group is considered to have formed a ring by the bonding of the bonds (for example, Ar 21 and Ar 22 (When both are phenyl groups, the spirobifluorenyl group is formed when these two phenyl groups bond together to form a ring.)

[0260] Specific examples of the compositions represented by the above general formulas (G21) to (G28) are included in the specific examples of the compositions represented by the above general formulas (G1) to (G4). Specific examples of the compositions represented by the above general formulas (G21) to (G28) are extracted from the specific examples of the compositions represented by the above general formulas (G1) to (G4) and are shown below. Although the organic compounds represented by structural formulas (630) to (689) and structural formulas (700) to (759) are omitted as specific examples of the compositions represented by the above general formulas (G1) to (G4), they are also specific examples of the compositions represented by the general formulas (G1) to (G4) and can be suitably used as the first organic compound.

[0261] [ka]

[0262] [ka]

[0263]

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[0264]

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[0265]

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[0266]

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[0267]

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[0268]

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[0269]

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[0270]

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[0271]

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[0272]

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[0273] [ka]

[0274] [ka]

[0275] The organic compounds represented by the above structural formulas are specific examples of the configurations represented by the above general formulas (G21) to (G28), but the organic compounds in one aspect of the present invention are not limited thereto.

[0276] Next, an embodiment of the present invention, a method for synthesizing an organic compound represented by the following general formula (G21), will be described.

[0277] [ka]

[0278] In general formula (G21), Ar 21 and Ar 22 Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring.

[0279] The following are synthesis schemes (B-1-1) or (B-1-2) and (B-2), synthesis schemes (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6) of an organic compound representing one aspect of the present invention represented by general formula (G21). An organic compound representing one aspect of the present invention represented by general formula (G21) can be synthesized by selecting any of the synthesis schemes (B-1-1) or (B-1-2) and (B-2), synthesis schemes (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6).

[0280] [ka]

[0281] [ka]

[0282] [ka]

[0283] [ka]

[0284] [ka]

[0285] [ka]

[0286] In addition, in synthesis schemes (B-1-1) or (B-1-2) and (B-2), synthesis schemes (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6), Ar 21 and Ar 22Each of these independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and R 201 ~R 215 , R 220 ~R 226 and R 230 ~R 236 Each of these independently represents hydrogen (including deuterium), a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C3 to C10 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group, X 4 Ar represents sulfur or oxygen. 21 and Ar 22 The groups represented by may bond to each other to form a ring. Also, X 11 ~X 13 This represents a halogen or trifluoromethanesulfonic acid group, preferably chlorine, bromine, or iodine.

[0287] As shown in the above synthesis scheme (B-3-1), a secondary amine can be obtained by a coupling reaction between a spirobifluorene compound having an amino group and a fluorene compound having a halogen or trifluoromethanesulfonic acid group. Alternatively, as shown in the above synthesis scheme (B-3-2), a secondary amine can be obtained by a coupling reaction between a fluorene compound having an amino group and a spirobifluorene compound having a halogen or trifluoromethanesulfonic acid group. Then, as shown in the above synthesis scheme (B-2), the target product represented by general formula (G21) can be obtained by a coupling reaction between the secondary amine compound obtained by the reaction shown in synthesis scheme (B-3-1) or synthesis scheme (B-3-2) and a dibenzofuran compound having a halogen or trifluoromethanesulfonic acid group, or a dibenzothiophene compound having a halogen or trifluoromethanesulfonic acid group.

[0288] Furthermore, as shown in synthesis scheme (B-3-1), a secondary amine can be obtained by coupling a spirobifluorene compound having an amino group with a dibenzofuran compound having a halogen or trifluoromethanesulfonic acid group, or a dibenzothiophene compound having a halogen or trifluoromethanesulfonic acid group. Alternatively, as shown in synthesis scheme (B-3-2), a secondary amine can be obtained by coupling a dibenzofuran compound having an amino group, or a dibenzothiophene compound having an amino group with a spirobifluorene compound having a halogen or trifluoromethanesulfonic acid group. Then, as shown in synthesis scheme (B-4), the target product represented by general formula (G21) can be obtained by coupling the secondary amine compound obtained by the reaction shown in synthesis scheme (B-3-1) or synthesis scheme (B-3-2) with a fluorene compound having a halogen or trifluoromethanesulfonic acid group.

[0289] Furthermore, as shown in synthesis scheme (B-5-1), a secondary amine can be obtained by coupling a fluorene compound having an amino group with a dibenzofuran compound having a halogen or trifluoromethanesulfonic acid group, or a dibenzothiophene compound having a halogen or trifluoromethanesulfonic acid group. Alternatively, as shown in synthesis scheme (B-5-2), a secondary amine can be obtained by coupling a dibenzofuran compound having an amino group, or a dibenzothiophene compound having an amino group, with a fluorene compound having a halogen or trifluoromethanesulfonic acid group. Then, as shown in synthesis scheme (B-6), the target product represented by general formula (G21) can be obtained by coupling the secondary amine compound obtained by the reaction shown in synthesis scheme (B-5-1) or synthesis scheme (B-5-2) with a spirobifluorene compound having a halogen or trifluoromethanesulfonic acid group.

[0290] The synthesis of the target product represented by synthesis schemes (B-1-1) or (B-1-2) and (B-2), synthesis schemes (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6) can be performed in any order of coupling to obtain the target product, thus allowing for the selection of any raw materials.

[0291] In synthesis schemes (B-1-1), (B-1-2), and (B-2), synthesis schemes (B-3-1), (B-3-2), and (B-4), and (B-5-1), (B-5-2), and (B-6), when performing the Buchwald-Hartwig reaction using a palladium catalyst, bis(dibenzylideneacetone)palladium(0), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, and tetrakis(triphenylphosphine) are used. Palladium compounds such as palladium(O) and allylpalladium(II) chloride (dimer) can be used, along with ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, cBRIDP, and 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene. Organic bases such as sodium tert-butoxide or inorganic bases such as potassium carbonate, cesium carbonate, and sodium carbonate can be used in this reaction. Toluene, xylene, benzene, tetrahydrofuran, and dioxane can be used as solvents in this reaction. The reagents that can be used in this reaction are not limited to those mentioned above. Compounds in which an organotin group is bonded to an amino group can also be used in place of compounds containing an amino group.

[0292] Furthermore, in synthesis schemes (B-1-1), (B-1-2), and (B-2), synthesis schemes (B-3-1), (B-3-2), and (B-4), and (B-5-1), (B-5-2), and (B-6), the Ullmann reaction can also be carried out using copper or a copper compound. Examples of bases used include inorganic bases such as potassium carbonate. Suitable solvents for this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)pyrimidinone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, a reaction temperature of 100°C or higher yields the target product in a shorter time and with higher yield; therefore, it is preferable to use DMPU or xylene, which have high boiling points. A higher reaction temperature of 150°C or higher is even more preferable, and therefore, DMPU is more preferably used. The reagents that can be used in this reaction are not limited to those mentioned above.

[0293] As described above, an organic compound according to one embodiment of the present invention, represented by general formula (G21), can be synthesized. However, the organic compound having an amino group that serves as a raw material for synthesis can be synthesized according to the following synthesis schemes (B-7) and (B-8).

[0294] [ka]

[0295] In synthesis schemes (B-7) and (B-8), R 201 ~R 215 This is the same as the general formula (G21), and X 12 This is the same as the synthesis schemes (B-1-1) or (B-1-2) and (B-2), (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6).

[0296] In the synthesis scheme (B-7), when performing a coupling reaction using a palladium catalyst, palladium compounds such as bis(dibenzylideneacetone)palladium(O), palladium(II) acetate, [1,1-bis(diphenylphosphino)ferrocene]palladium(II) dichloride, tetrakis(triphenylphosphine)palladium(O), and allylpalladium(II) chloride (dimer) can be used, along with ligands such as tri(tert-butyl)phosphine, tri(n-hexyl)phosphine, tricyclohexylphosphine, di(1-adamantyl)-n-butylphosphine, 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl, tri(ortho-tolyl)phosphine, cBRIDP, and 4,5-bis(diphenylphosphino)-9,9-dimethylxanthene. In this reaction, organic bases such as sodium tert-butoxide, or inorganic bases such as potassium carbonate, cesium carbonate, or sodium carbonate can be used. Toluene, xylene, benzene, tetrahydrofuran, dioxane, etc., can be used as solvents in this reaction. The reagents that can be used in this reaction are not limited to those mentioned above. Furthermore, compounds in which an organotin group is bonded to an amino group can be used in place of compounds containing an amino group.

[0297] Furthermore, in synthesis scheme (B-7), an Ullmann reaction using copper or a copper compound can also be carried out. Examples of bases that can be used include inorganic bases such as potassium carbonate. Examples of solvents that can be used in this reaction include 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)pyrimidinone (DMPU), toluene, xylene, and benzene. In the Ullmann reaction, a reaction temperature of 100°C or higher allows for faster and higher yield acquisition of the target product; therefore, it is preferable to use DMPU or xylene, which have high boiling points. Furthermore, a reaction temperature of 150°C or higher is even more preferable, and therefore, DMPU is more preferably used. The reagents that can be used in this reaction are not limited to those mentioned above.

[0298] When performing the hydrolysis reaction shown in the synthesis scheme (B-8), if an acid is used, an acid that does not have a dehydrating effect, such as trifluoroacetic acid, trifluoromethanesulfonic acid, acetic acid, hydrochloric acid, or hydrobromic acid, is preferably used. If a base is used, an aqueous solution of sodium hydroxide or an aqueous solution of potassium hydroxide can be used.

[0299] Organic compounds having an amino group, as shown in synthesis schemes (B-1-1) or (B-1-2) and (B-2), synthesis schemes (B-3-1) or (B-3-2) and (B-4), and (B-5-1) or (B-5-2) and (B-6), can be synthesized using the same reactions as in synthesis schemes (B-7) and (B-8), and can be aminated as shown in synthesis schemes (B-9) and (B-10) below. The aminations shown in synthesis schemes (B-9) and (B-10) can be synthesized using the same synthetic methods as the reactions shown in synthesis schemes (B-7) and (B-8).

[0300] [ka]

[0301] The above describes an example of a method for synthesizing an organic compound, which is one aspect of the present invention. However, the present invention is not limited thereto, and the compound may be synthesized by any other method.

[0302] Figures 1(B) and 1(C) show an example of the specific structure of the light-emitting device 100 shown in Figure 1(A). Figure 1(B) shows a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked on a first electrode 101.

[0303] As can be seen from the cross-sectional view in Figure 1(B), the structure has such that the ends (or sides) of the hole injection layer 111, hole transport layer 112, light-emitting layer 113, and electron transport layer 114 are inward from the ends (or sides) of the first electrode 101. Furthermore, the structure has such that the ends (or sides) of the hole injection layer 111, hole transport layer 112, light-emitting layer 113, and electron transport layer 114 are in contact with a part of the first electrode 101 and its ends (or sides), and with the insulating layer 107.

[0304] By providing the insulating layer 107, the edges (or sides) of the hole injection layer 111, the hole transport layer 112, the edges (or sides) of the light-emitting layer 113, and the edges (or sides) of the electron transport layer 114 can be protected. This suppresses damage to each layer during the manufacturing process and prevents electrical connections due to contact between different layers.

[0305] The electron injection layer 115 is part of the EL layer 103, but as shown in Figure 1(B), it has a different shape from the other layers of the EL layer 103 (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114). However, the electron injection layer 115 and the second electrode 102 can have the same shape. Since the electron injection layer 115 and the second electrode 102 can be layers common to multiple light-emitting devices, the manufacturing process of the light-emitting device 100 can be simplified and throughput can be improved.

[0306] Alternatively, the light-emitting device may have a structure as shown in Figure 1(C). A hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked on top of the first electrode 101, covering the first electrode 101, and the ends of the hole injection layer 111, hole transport layer 112, light-emitting layer 113, and electron transport layer 114 are located outside the ends (or sides) of the first electrode 101 in the cross-sectional view of Figure 1(C). Furthermore, the ends of the hole injection layer 111, hole transport layer 112, light-emitting layer 113, and electron transport layer 114 are in contact with an insulating layer 107.

[0307] The insulating layer 107 is in contact with the ends of the hole injection layer 111, the ends (or sides) of the hole transport layer 112, the ends (or sides) of the light-emitting layer 113, and the ends (or sides) of the electron transport layer 114. The insulating layer 107 is also located between the ends of the hole injection layer 111, the ends (or sides) of the hole transport layer 112, the ends (or sides) of the light-emitting layer 113, and the ends (or sides) of the electron transport layer 114 and the second insulating layer 140. The electron injection layer 115 is also located on the second insulating layer 140, the insulating layer 107, and the electron transport layer 114. The second insulating layer 140 can be made of an organic compound or an inorganic compound.

[0308] When an organic compound is used for the second insulating layer 140, for example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. A photosensitive resin may also be used. As the photosensitive resin, a positive-type material or a negative-type material can be used.

[0309] By using a photosensitive resin as the second insulating layer 140, the second insulating layer 140 can be fabricated solely through the exposure and development processes in the manufacturing process, thereby reducing the impact on other layers due to dry etching or wet etching. Furthermore, using a negative-type photosensitive resin is preferable because it may allow the photomask (exposure mask) used in other processes to be reused.

[0310] In the device structures shown in Figures 1(B) and 1(C), when a pattern is formed during the manufacturing process to give a desired shape to a portion of the EL layer 103, heat is applied to the processed surface, and it may also be exposed to the atmosphere. This can lead to problems such as crystallization of the light-emitting layer 113 or electron transport layer 114, potentially reducing the reliability and brightness of the light-emitting device. In contrast, the light-emitting device 100 shown in this embodiment 1 performs pattern formation after the electron transport layer 114 is deposited, thereby suppressing problems such as crystallization of the light-emitting layer 113. In this case, since the electron injection layer 115, which is part of the EL layer 103, is formed after the electron transport layer is formed, the structure of the electron injection layer 115 is different from that of the other layers of the EL layer 103 (hole injection layer 111, hole transport layer 112, light-emitting layer 113, and electron transport layer 114).

[0311] The light-emitting device 100 having the shapes shown in Figures 1(B) and 1(C) is an example of a device structure that can be pattern-formed by such a manufacturing method, but the shape of the light-emitting device according to one aspect of the present invention is not limited to this. By having such a device structure according to one aspect of the present invention, it is possible to provide a light-emitting device that suppresses a decrease in efficiency and a deterioration in reliability.

[0312] Note that the insulating layer 107 shown in Figures 1(B) and 1(C) may be omitted if unnecessary. For example, if the conductivity between the electron injection layer 115 and the hole injection layer 111 and hole transport layer 112 is sufficiently small, the light-emitting device 100 may not have an insulating layer 107.

[0313] The materials that can be used as the first electrode 101, the second electrode 102, the hole injection layer 111, the hole transport layer 112, the light-emitting layer 113, the electron injection layer 115, and the insulating layer 107 are materials that will be described in later embodiments.

[0314] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0315] (Embodiment 2) In this embodiment, other configurations of the light-emitting device shown in Embodiment 1 will be explained using Figures 2(A) to 2(E).

[0316] ≪Basic Structure of Light-Emitting Devices≫ The basic structure of the light-emitting device will be described. Figure 2(A) shows a light-emitting device having an EL layer including a light-emitting layer between a pair of electrodes. Specifically, it has a structure in which the EL layer 103 is sandwiched between the first electrode 101 and the second electrode 102. The first organic compound described in Embodiment 1 can be used for the EL layer 103.

[0317] Furthermore, Figure 2(B) shows a light-emitting device with a stacked structure (tandem structure) having multiple (two layers in Figure 2(B)) EL layers (103a, 103b) between a pair of electrodes, and a charge generation layer 106 between the EL layers. A light-emitting device with a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0318] The charge generation layer 106 has the function of injecting electrons into one EL layer (103a or 103b) and holes into the other EL layer (103b or 103a) when a potential difference is created between the first electrode 101 and the second electrode 102. Therefore, in Figure 2(B), when a voltage is applied to the first electrode 101 such that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into EL layer 103a and holes are injected into EL layer 103b.

[0319] Furthermore, from the viewpoint of light extraction efficiency, it is preferable that the charge generation layer 106 is transparent to visible light (specifically, the transmittance of visible light to the charge generation layer 106 is 40% or more). In addition, the charge generation layer 106 can function even if its conductivity is lower than that of the first electrode 101 and the second electrode 102.

[0320] Figure 2(C) shows the laminated structure of the EL layer 103 of a light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode and the second electrode 102 functions as a cathode. The EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially laminated on the first electrode 101. The light-emitting layer 113 may be a configuration in which multiple light-emitting layers of different emission colors are laminated. For example, a light-emitting layer containing a red light-emitting material, a light-emitting layer containing a green light-emitting material, and a light-emitting layer containing a blue light-emitting material may be laminated, or laminated via a layer having a carrier transport material. Alternatively, a combination of a light-emitting layer containing a yellow light-emitting material and a light-emitting layer containing a blue light-emitting material may be used. However, the laminated structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may be a structure in which multiple light-emitting layers of the same emission color are stacked. For example, a first light-emitting layer containing a blue light-emitting material and a second light-emitting layer containing a blue light-emitting material may be stacked, or a structure in which they are stacked via a layer having a carrier transport material. In the case of a structure in which multiple light-emitting layers of the same emission color are stacked, reliability can be increased compared to a single-layer structure. Also, even when there are multiple EL layers as in the tandem structure shown in Figure 2(B), each EL layer is stacked sequentially from the anode side as described above. Furthermore, if the first electrode 101 is the cathode and the second electrode 102 is the anode, the stacking order of the EL layer 103 is reversed. Specifically, on the first electrode 101, which is the cathode, 111 is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0321] The light-emitting layers 113 contained in the EL layers (103, 103a, 103b) each contain a light-emitting material and a combination of multiple materials as appropriate, and can be configured to produce fluorescence emission or phosphorescence emission exhibiting a desired emission color. Alternatively, the light-emitting layers 113 may be arranged in a laminated structure with different emission colors. In this case, the light-emitting material and other materials used in each laminated light-emitting layer may be different materials. Alternatively, a configuration may be used in which different emission colors can be obtained from multiple EL layers (103a, 103b) as shown in Figure 2(B). In this case as well, the light-emitting material and other materials used in each light-emitting layer may be different materials.

[0322] Furthermore, in a light-emitting device according to one aspect of the present invention, for example, by using a reflective electrode as the first electrode 101 shown in Figure 2(C) and a semi-transparent / semi-reflective electrode as the second electrode 102, and by using a micro-cavity structure, the light emitted from the light-emitting layer 113 contained in the EL layer 103 can be resonated between the two electrodes, thereby strengthening the light emitted from the second electrode 102.

[0323] Furthermore, if the first electrode 101 of the light-emitting device is a reflective electrode consisting of a laminated structure of a reflective conductive material and a translucent conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to be mλ / 2 (where m is an integer of 1 or more) or close to it, with respect to the wavelength λ of light obtained from the light-emitting layer 113.

[0324] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), and the optical distance from the second electrode 102 to the region of the light-emitting layer 113 where the desired light is obtained (light-emitting region), so that they are (2m'+1)λ / 4 (where m' is an integer of 1 or more) or near that value. The light-emitting region referred to here is the region in the light-emitting layer 113 where holes and electrons recombine.

[0325] By performing such optical adjustments, the spectrum of specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, resulting in emission with good color purity.

[0326] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be precisely defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective regions of the first electrode 101 and the second electrode 102, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 and the second electrode 102 is the reflective region. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be precisely defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which the desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which the desired light is obtained, the above effects can be sufficiently obtained by assuming that any position on the first electrode 101 is the reflective region and any position on the light-emitting layer from which the desired light is obtained is the light-emitting region.

[0327] The light-emitting device shown in Figure 2(D) is a light-emitting device having a tandem structure and a microcavity structure. Therefore, when light-emitting layers with different emission colors are used for each EL layer (103a, 103b), it is possible to extract light of a desired wavelength (monochromatic light) originating from any of the light-emitting layers. Accordingly, by using such a light-emitting device in a light-emitting apparatus and adjusting the microcavity structure so that light of different wavelengths can be extracted for each subpixel, it becomes unnecessary to paint different colors (e.g., RGB) to obtain different emission colors. Thus, it is easy to achieve high resolution. It can also be combined with a colored layer (color filter). Furthermore, it is possible to strengthen the emission intensity in the front direction at a specific wavelength, thus enabling lower power consumption.

[0328] The light-emitting device shown in Figure 2(E) is an example of a tandem-structured light-emitting device shown in Figure 2(B). As shown in the figure, it has a structure in which three EL layers (103a, 103b, 103c) are stacked with charge generation layers (106a, 106b) in between. Each of the three EL layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of each light-emitting layer can be freely combined. For example, light-emitting layer 113a can be blue, light-emitting layer 113b can be red, green, or yellow, and light-emitting layer 113c can be blue. Alternatively, light-emitting layer 113a can be red, light-emitting layer 113b can be blue, green, or yellow, and light-emitting layer 113c can be red.

[0329] In the light-emitting device according to one aspect of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transparent / semi-reflective electrode). If the light-transmitting electrode is a transparent electrode, the transmittance of visible light of the transparent electrode shall be 40% or more. If it is a semi-transparent / semi-reflective electrode, the reflectance of visible light of the semi-transparent / semi-reflective electrode shall be 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, the resistivity of these electrodes shall be 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0330] Furthermore, in the light-emitting device according to one aspect of the present invention described above, if one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. In addition, the resistivity of this electrode is 1 × 10⁻⁶. -2 It is preferable to keep it below Ωcm.

[0331] ≪Specific structure of a light-emitting device≫ Next, a specific structure of a light-emitting device according to one aspect of the present invention will be described. Here, we will use Figure 2(D), which has a tandem structure, for explanation. The same applies to the EL layer configuration for the single-structure light-emitting devices shown in Figures 2(A) and 2(C). Furthermore, if the light-emitting device shown in Figure 2(D) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transparent / semi-reflective electrode. Thus, one or more desired electrode materials can be used and formed as a single layer or in a stacked manner. The second electrode 102 is formed after the EL layer 103b is formed, by selecting an appropriate material.

[0332] <First electrode and second electrode> As materials for forming the first electrode 101 and the second electrode 102, any combination of the following materials can be used as long as the functions of both electrodes described above are met. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, these include In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. In addition, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these in appropriate combinations, as well as graphene and other materials can be used.

[0333] In the light-emitting device shown in Figure 2(D), when the first electrode 101 is the anode, the hole injection layer 111a and the hole transport layer 112a of the EL layer 103a are sequentially laminated on the first electrode 101 by vacuum deposition. After the EL layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the EL layer 103b are similarly sequentially laminated on the charge generation layer 106.

[0334] <Hole injection layer> The hole injection layers (111, 111a, 111b) are layers that inject holes from the first electrode 101, which is the anode, and the charge generation layers (106, 106a, 106b) into the EL layers (103, 103a, 103b), and are layers that contain an organic acceptor material and a material with high hole injection capabilities. The first organic compound described in Embodiment 1 can be used in the hole injection layer.

[0335] Organic acceptor materials are materials that can generate holes in an organic compound by separating its charge from other organic compounds whose LUMO (Lowest Unoccupied Molecular Orbital) level value is close to that of the HOMO level value. Therefore, compounds having electron-withdrawing groups (halogen groups or cyano groups), such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives, can be used as organic acceptor materials. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexazatriphenylene (abbreviated as HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviated as F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. can be used. Furthermore, among organic acceptor materials, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are particularly suitable because they have high acceptability and stable film properties with respect to heat. In addition, radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group) [3] are also preferred because they have very high electron-accepting properties. Specifically, α,α',α''-1,2,3-cyclopropanetriylidenates[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenates[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenates[2,3,4,5,6-pentafluorobenzeneacetonitrile] can be used.

[0336] Furthermore, as materials with high hole injection potential, oxides of metals belonging to groups 4 through 8 of the periodic table (such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, and other transition metal oxides) can be used. Specifically, examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle. In addition, phthalocyanine compounds such as phthalocyanine (abbreviated as H2Pc) or copper phthalocyanine (abbreviated as CuPc) can be used.

[0337] In addition to the above materials, the low molecular weight compounds 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), 1,3,5- Aromatic amine compounds such as tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

[0338] Furthermore, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can be used. Alternatively, polymer compounds to which acids such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviated as PAni / PSS) can be added can also be used.

[0339] Furthermore, as a material with high hole injection capabilities, a mixed material containing a hole transport material and the aforementioned organic acceptor material (electron-accepting material) can also be used. In this case, electrons are extracted from the hole transport material by the organic acceptor material, generating holes in the hole injection layer 111, and these holes are injected into the light-emitting layer 113 via the hole transport layer 112. The hole injection layer 111 may be formed as a single layer of a mixed material containing a hole transport material and an organic acceptor material (electron-accepting material), or it may be formed by laminating the hole transport material and the organic acceptor material (electron-accepting material) in separate layers.

[0340] Furthermore, for hole-transporting materials, the hole mobility at which the square root of the electric field strength [V / cm] is 600 is 1 × 10⁻⁶. -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. However, any material that has higher hole transport than electron transport can be used.

[0341] Furthermore, preferred hole-transporting materials include compounds having a π-electron-rich heteroaromatic ring (e.g., carbazole derivatives, furan derivatives, or thiophene derivatives) and aromatic amines (organic compounds having an aromatic amine skeleton), which are materials with high hole-transporting properties.

[0342] Examples of the above-mentioned carbazole derivatives (organic compounds having a carbazole ring) include bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) and aromatic amines having a carbazolyl group.

[0343] Furthermore, specific examples of the above-mentioned bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) include 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviated as mBPCCBP), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as βNCCP).

[0344] Furthermore, examples of aromatic amines having the above-mentioned carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazole-3-amine (abbreviation: PCBiF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine ( Abbreviation: PCBBiF), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-bis(9,9-dimethyl-9H-fluoren-2-yl)amine (Abbreviation: PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluorene N-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobio(9H-fluoren) )-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi(9H-fluorene)-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluorene-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole-3-yl)triphenyl Min (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazole-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazole-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation) (Abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazole-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), 3-[N-(9-phenyl Carbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-Bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: PCAS) Examples include F), N-[4-(9H-carbazole-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazole-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluoren-2,7-diamine (abbreviation: YGA2F), and 4,4',4''-tris(carbazole-9-yl)triphenylamine (abbreviation: TCTA).

[0345] In addition to the above, other examples of carbazole derivatives include 3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviated as TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA).

[0346] Furthermore, specific examples of the above-mentioned furan derivatives (organic compounds having a furan ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).

[0347] Furthermore, specific examples of the above-mentioned thiophene derivatives (organic compounds having a thiophene ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviated as DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV).

[0348] Furthermore, the above aromatic amines specifically include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB or α-NPD), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviated as TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as BPAFLP), and 4-phenyl-3 '-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9 ,9'-bifluorene (abbreviation: DPASF), 2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N, N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)) ), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenyl Min (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)na Phthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4' '-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazole-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazole-9-yl)phenyl]tris(1, 1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis([1,1'-bi Phenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis([1,1'-biphenyl]-4-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobio[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluoren-2- Examples include N,N-bis(9,9-dimethyl-9H-fluoren-4-amine), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobio-9H-fluoren-1-amine, etc.

[0349] In addition, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviated as PVK), poly(4-vinyltriphenylamine) (abbreviated as PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviated as PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD) can be used as hole transport materials. Alternatively, polymer compounds to which acids such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviated as PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviated as PAni / PSS) can be added can also be used.

[0350] However, the hole transport material is not limited to the above, and various known materials may be used as a hole transport material by combining one or more of them.

[0351] The hole injection layers (111, 111a, 111b) can be formed using various known film deposition methods, for example, by vacuum deposition.

[0352] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers that transport holes injected from the first electrode 101 by the hole injection layers (111, 111a, 111b) to the light-emitting layers (113, 113a, 113b). The hole transport layers (112, 112a, 112b) are layers containing a hole-transporting material. Therefore, the hole transport layers (112, 112a, 112b) can use the same hole-transporting material that can be used in the hole injection layers (111, 111a, 111b).

[0353] In one embodiment of the present invention, the same organic compound used in the hole transport layer (112, 112a, 112b) can be used in the light-emitting layer (113, 113a, 113b, 113c). Using the same organic compound in both the hole transport layer (112, 112a, 112b) and the light-emitting layer (113, 113a, 113b, 113c) is preferable because it allows for more efficient transport of holes from the hole transport layer (112, 112a, 112b) to the light-emitting layer (113, 113a, 113b, 113c).

[0354] Furthermore, the first organic compound described in Embodiment 1 can be used in the hole transport layer.

[0355] <Luminous layer> The light-emitting layers (113, 113a, 113b, 113c) are layers containing a light-emitting material. The light-emitting material that can be used in the light-emitting layers (113, 113a, 113b, 113c) can be any material that exhibits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red. Furthermore, if there are multiple light-emitting layers, a configuration exhibiting different light-emitting colors can be achieved by using different light-emitting materials in each layer (for example, white light emission obtained by combining complementary light-emitting colors). Additionally, a laminated structure in which each light-emitting layer contains a different light-emitting material is also possible.

[0356] Furthermore, the light-emitting layers (113, 113a, 113b, 113c) may contain one or more types of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0357] Furthermore, when multiple host materials are used in the light-emitting layer (113, 113a, 113b, 113c), it is preferable to use a material with a larger energy gap than the energy gaps of the existing guest material and the first host material as the newly added second host material. It is also preferable that the lowest singlet excitation level (S1 level) of the second host material is higher than the S1 level of the first host material, and that the lowest triplet excitation level (T1 level) of the second host material is higher than the T1 level of the guest material. Furthermore, it is preferable that the lowest triplet excitation level (T1 level) of the second host material is higher than the T1 level of the first host material. With this configuration, an excitation complex can be formed using two types of host materials. In order to efficiently form the excitation complex, it is particularly preferable to combine a compound that readily accepts holes (hole transport material) with a compound that readily accepts electrons (electron transport material). This configuration also enables the simultaneous achievement of high efficiency, low voltage, and long lifetime.

[0358] The organic compounds used as the host material (including the first and second host materials) can be hole-transporting materials that can be used in the aforementioned hole-transporting layers (112, 112a, 112b), or electron-transporting materials that can be used in the electron-transporting layers (114, 114a, 114b) described later, as long as they satisfy the conditions for being a host material used in the light-emitting layer. An excited complex composed of multiple types of organic compounds (the first and second host materials) may also be used. An excited complex (also called an exciplex) that forms an excited state with multiple types of organic compounds has an extremely small difference between the S1 and T1 levels and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy. Furthermore, as a combination of multiple types of organic compounds that form an excited complex, for example, it is preferable that one has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. Furthermore, as a combination for forming the excitation complex, one of the components may be a phosphorescent material such as an iridium, rhodium, or platinum-based organometallic complex, or a metal complex.

[0359] There are no particular limitations on the luminescent material that can be used in the luminescent layers (113, 113a, 113b, 113c). A luminescent material that converts singlet excitation energy into visible light emission, or a luminescent material that converts triplet excitation energy into visible light emission, can be used.

[0360] <<Luminescent material that converts singlet excitation energy into light emission>> Examples of luminescent materials that can be used in the light-emitting layers (113, 113a, 113b, 113c) to convert singlet excitation energy into light include the following fluorescent materials (fluorescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives are examples. Pyrene derivatives are particularly preferred because they have a high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N, Examples include N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03).

[0361] Also, 5,6-bis[4-(10-phenyl-9-antryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-antryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazole-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazole (9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazole-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-antryl)phenyl]-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl) Nilen)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviated as DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), etc. can be used.

[0362] Also, N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl -2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracene-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-yl DCM1)propanedinitrile, 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine (p -mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-Bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAP Examples include rn-03, 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0363] <<Luminescent material that converts triplet excitation energy into light emission>> Next, examples of light-emitting materials that can be used in the light-emitting layer 113 to convert triplet excitation energy into light include phosphorescent materials (phosphorescent materials) or thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0364] A phosphorescent material is a compound that exhibits phosphorescence and does not fluoresce at any temperature range above low temperatures (e.g., 77K) and below room temperature (i.e., between 77K and 313K). The phosphorescent material preferably contains a metal element with strong spin-orbit interaction, and examples include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Specifically, transition metal elements are preferred, and particularly platinum group elements (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)) are preferred. The presence of iridium is especially preferable because it increases the transition probability involved in the direct transition between the singlet ground state and the triplet excited state.

[0365] ≪Phosphorescent materials (450nm to 570nm: blue or green)≫ Examples of phosphorescent materials that exhibit blue or green light and have a peak wavelength of emission spectrum between 450 nm and 570 nm include the following:

[0366] For example, Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), Tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), Tris[4-(3-biphenyl [Ir(iPrptz-3b)3], Tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), organometallic complexes having a 4H-triazole ring such as Tris[3-methyl-1-( Organometallic complexes having a 1H-triazole ring, such as 2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), and fac-tris[1-(2,6-diisopropyl Organometallic complexes having an imidazole ring, such as phenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridineto]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), and bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2 '] Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2 '] Iridium(III) picolinate (abbreviation: Firpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinate-N,C 2’ Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’Examples include organometallic complexes that use phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviated as Fir(acac)).

[0367] ≪Phosphorescent materials (495nm to 590nm: green or yellow)≫ Examples of phosphorescent materials that exhibit a green or yellow color and have a peak wavelength of emission spectrum between 495 nm and 590 nm include the following:

[0368] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [I r(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN 3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes having a pyrimidine ring such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyradinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), tris(2-phenylpyridinato-N,C 2’ Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinate-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinate)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinate)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinate-N,C) 2’ Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC] Iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofloflo[2,3-b]pyridine-κC] bis[2-(5-d3-methyl-2-pyridinyl-κN 2[Phenyl-κC] Iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), [2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofl[2,3-b]pyridin-7-yl-κC]bis[5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC] Iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl Organometallic iridium complexes having a pyridine ring, such as -κN)benzofl[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)) and [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), and bis(2,4-diphenyl-1,3-oxazolato-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolat-N,C) 2’ Examples include organometallic complexes such as iridium(III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonate)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]).

[0369] ≪Phosphorescent materials (570nm to 750nm: yellow or red)≫ Examples of phosphorescent materials that exhibit a yellow or red color and have a peak wavelength of emission spectrum between 570 nm and 750 nm include the following:

[0370] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloylmethanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]), and other pyramidal compounds. Organometallic complexes having a limidine ring: (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O') Iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyradinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis[2-(5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN)-4,6-dimethylphenyl-κC](2,2',6,6'-tetramethyl-3,5-heptanedionato-κ2O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2’ Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C) 2’Organometallic complexes having a pyrazine ring, such as iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), and tris(1-phenylisoquinolinato-N,C) 2’ Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C) 2’ Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2 Examples include organometallic complexes having a pyridine ring, such as O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), and rare earth metal complexes such as tris[1-(2-tenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0371] ≪TADF material≫ Furthermore, the following materials can be used as TADF materials. A TADF material is a material in which the difference between the S1 level and the T1 level is small (preferably 0.2 eV or less), the triplet excited state can be upconverted to the singlet excited state with a small amount of thermal energy (reverse intersystem crossing), and the emission (fluorescence) from the singlet excited state is efficiently exhibited. Furthermore, conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited level and the singlet excited level of 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. In addition, delayed fluorescence in TADF materials refers to emission that has a spectrum similar to normal fluorescence but with a remarkably long lifetime. Its lifetime is 1 × 10⁻⁶-6 For more than a second, preferably 1 × 10⁻⁶ seconds. -3 It is more than a second.

[0372] Examples of TADF materials include fullerenes and their derivatives, acridine derivatives such as proflavin, and eosin. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) are also included. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (abbreviated as SnF2(Proto IX)), mesoporphyrin-tin fluoride complexes (abbreviated as SnF2(Meso IX)), hematoporphyrin-tin fluoride complexes (abbreviated as SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complexes (abbreviated as SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complexes (abbreviated as SnF2(OEP)), etioporphyrin-tin fluoride complexes (abbreviated as SnF2(Etio I)), and octaethylporphyrin-platinum chloride complexes (abbreviated as PtCl2OEP).

[0373] [ka]

[0374] Other examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindoro[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviated as PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as PCCzPTzn), and 2-[4-(10H-phenoxy [Sadin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine-10-yl)-9H-xanthene-9-one (abbreviation: ACRXTN), bis[4-(9, 9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)benzoflo[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Hetero-aromatic compounds having π-electron-rich hetero-aromatic compounds and π-electron-deficient hetero-aromatic compounds such as bi-9H-carbazole-9-yl)phenyl]benzofl[3,2-d]pyrimidine (abbreviation: 4PCCzPBfpm) and 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02) may also be used.

[0375] Furthermore, a material in which a π-electron-rich heteroaromatic compound and a π-electron-deficient heteroaromatic compound are directly bonded is particularly preferable because both the donor properties of the π-electron-rich heteroaromatic compound and the acceptor properties of the π-electron-deficient heteroaromatic compound become stronger, and the energy difference between the singlet excited state and the triplet excited state becomes smaller. In addition, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material. Since such a TADF material has a shorter luminescence lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device.

[0376] [ka]

[0377] In addition to the above, other materials that have the function of converting triplet excitation energy into light emission include nanostructures of transition metal compounds having a perovskite structure. Nanostructures of metal halogen perovskites are particularly desirable. Nanoparticles and nanorods are preferred as such nanostructures.

[0378] In the light-emitting layers (113, 113a, 113b, 113c), the organic compounds (host materials, etc.) used in combination with the light-emitting material (guest material) described above may be one or more materials having an energy gap larger than the energy gap of the light-emitting material (guest material).

[0379] ≪Host materials for fluorescence emission≫ When the light-emitting material used in the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting material, it is preferable to use an organic compound (host material) that has a large singlet excited state energy level and a small triplet excited state energy level, or an organic compound with a high fluorescence quantum yield. Therefore, any organic compound that satisfies these conditions can be used, such as the hole transport material (described above) and electron transport material (described below) shown in this embodiment.

[0380] Although some of these overlap with the specific examples mentioned above, from the perspective of preferred combinations with luminescent substances (fluorescent substances), examples of organic compounds (host materials) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0381] Specific examples of organic compounds (host materials) that are preferable to use in combination with fluorescent luminescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviated as DPCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9,10-diphenylanthracene (abbreviated as DPAnth), and N,N-diphenyl Nyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), 6,12-Dimethoxy-5,11-Diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-Tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Nzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl}anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9 -(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene Tracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-[4-(10-[1,1'-biphenyl]-4-yl-9-anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: E Examples include tBImPBPhA), 9,9'-biantryl (abbreviated as BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviated as DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviated as DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviated as TPB3), 5,12-diphenyltetracene, and 5,12-bis(biphenyl-2-yl)tetracene.

[0382] ≪Host materials for phosphorescence≫ Furthermore, when the luminescent material used in the luminescent layers (113, 113a, 113b, 113c) is a phosphorescent material, it is sufficient to select an organic compound (host material) to combine with it that has a triplet excitation energy greater than the triplet excitation energy of the luminescent material (the energy difference between the ground state and the triplet excited state). When using multiple organic compounds (for example, a first host material and a second host material (or assist material), etc.) in combination with the luminescent material to form an excited complex, it is preferable to mix these multiple organic compounds with the phosphorescent material.

[0383] This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excited complex to the luminescent material. The combination of organic compounds should ideally be one that readily forms an excited complex, and a combination of a compound that readily accepts holes (hole transport material) and a compound that readily accepts electrons (electron transport material) is particularly preferable.

[0384] In addition, although some of these overlap with the specific examples mentioned above, from the perspective of preferred combinations with luminescent substances (phosphorescent substances), suitable organic compounds (host materials, assist materials) include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), and benzimidazole derivatives (benzo- Examples include organic compounds having a midazole ring, quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), phlodiazine derivatives (organic compounds having a phlodiazine ring), zinc and aluminum-based metal complexes, etc.

[0385] Furthermore, among the above-mentioned organic compounds, specific examples of aromatic amines and carbazole derivatives, which are organic compounds with high hole transport properties, are the same as the specific examples of hole transport materials described above, and all of these are preferred as host materials.

[0386] Furthermore, among the above organic compounds, specific examples of dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, and 2,8-diphenyl Examples include nyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviated as DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviated as DBTFLP-IV), and 4-[3-(triphenylene-2-yl)phenyl]dibenzothiophene (abbreviated as mDBTPTp-II), all of which are preferred as host materials.

[0387] Other preferred host materials include metal complexes having oxazole-based or thiazole ligands such as bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviated as ZnBTZ).

[0388] Furthermore, among the above organic compounds, specific examples of organic compounds with high electron transport properties, such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives, include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) Organic compounds containing heteroaromatic rings with polyazole rings, such as 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviation: BzOs), and compounds containing heteroaromatic rings with pyridine rings, such as vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), and 2,2-(1,3-phenylene)bis[9-phenyl-1,10-phenanthroline] (abbreviation: mPPhen2P). The compound is 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,Examples include [h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), and all of these are preferred as host materials.

[0389] Furthermore, among the above organic compounds, specific examples of organic compounds with high electron transport properties include pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and phlodiazine derivatives, such as 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine ( (Abbreviation: 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (Abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazol (Abbreviation: mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (Abbreviation: 35DCzPPy), 1,3,5-tri [3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofloxacin[3, 2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]phenantro[9',10':4,5]flo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]flo[2,3-b]pyrazine, 11-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]flo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenanthro[9',10':4,5]flo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[(3'-9- [phenyl-9H-carbazole-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho[ [1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9- [3-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)phenyl]naphtho[1',2':4,5]flo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]flo[2,3-b]pyrazine, 11-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}phenantro[9',10':4,5]flo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl -6-[9,9'-spirobi(9H-fluorene)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalene-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-f Examples include organic compounds containing heteroaromatic rings having a diazine ring, such as phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), all of which are preferred as host materials.

[0390] Furthermore, among the above organic compounds, specific examples of metal complexes that are organic compounds with high electron transport properties include zinc-based or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviated as Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviated as Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviated as BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), bis(8-quinolinolato)zinc(II) (abbreviated as Znq), and metal complexes having a quinoline ring or a benzoquinoline ring, all of which are preferred as host materials.

[0391] Other polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) are also preferred as host materials.

[0392] Furthermore, there are bipolar organic compounds that are highly hole-transporting and highly electron-transporting, such as 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), and 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1 Organic compounds having a diazine ring, such as -b]carbazole (abbreviation: mINc(II)PTzn), 11-(4-[1,1'-biphenyl]-4-yl-6-phenyl-1,3,5-triazine-2-yl)-11,12-dihydro-12-phenyl-indoro[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as host materials.

[0393] <Electron transport layer> The electron transport layers (114, 114a, 114b) are layers that transport electrons injected from the second electrode 102 and the charge generation layers (106, 106a, 106b) by the electron injection layers (115, 115a, 115b), described later, to the light-emitting layers (113, 113a, 113b). In one embodiment of the present invention, the light-emitting device can improve heat resistance by having a laminated structure for the electron transport layers. Furthermore, the electron-transporting material used in the electron transport layers (114, 114a, 114b) has an electron mobility of 1 × 10⁻¹⁰ at a square root of 600 electric field strength [V / cm]. -6 cm 2A material having an electron mobility of / Vs or higher is preferred. However, any material with higher electron transport capabilities than hole transport can be used. Furthermore, the electron transport layer (114, 114a, 114b) can function as a single layer, but it may also be a laminated structure of two or more layers. Since the above mixed material has heat resistance, performing the photolithography process on an electron transport layer using this material can suppress the influence of the thermal process on the device characteristics.

[0394] ≪Electron transport material≫ As electron-transporting materials that can be used in the electron transport layers (114, 114a, 114b), organic compounds with high electron transport properties can be used, for example, heteroaromatic compounds. A heteroaromatic compound is a cyclic compound that contains at least two different elements in its ring. The ring structure can include 3-membered rings, 4-membered rings, 5-membered rings, 6-membered rings, etc., but 5-membered or 6-membered rings are particularly preferred, and heteroaromatic compounds containing one or more of the following elements in addition to carbon are preferred. Heteroaromatic compounds containing nitrogen (nitrogen-containing heteroaromatic compounds) are particularly preferred, and it is preferable to use materials with high electron transport properties (electron-transporting materials) such as nitrogen-containing heteroaromatic compounds or π-electron-deficient heteroaromatic compounds containing them. It is preferable to use a different electron-transporting material from the material used in the light-emitting layer. Not all excitons generated by carrier recombination in the light-emitting layer can contribute to light emission, and some may diffuse into layers adjacent to or near the light-emitting layer. To avoid this phenomenon, it is preferable that the energy levels (lowest singlet excitation level or lowest triplet excitation level) of the materials used in layers adjacent to or near the light-emitting layer are higher than at least one of the materials used in the light-emitting layer. Therefore, it is preferable that the electron transport material is different from the material used in the light-emitting layer in order to obtain a highly efficient device.

[0395] Heteroaromatic compounds are organic compounds that have at least one heteroaromatic ring.

[0396] Furthermore, heteroaromatic rings contain one of the following: a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, or a thiazole ring. Heteroaromatic rings containing a diazine ring include heteroaromatic rings containing a pyrimidine ring, a pyrazine ring, or a pyridazine ring. Heteroaromatic rings containing a polyazole ring include heteroaromatic rings containing an imidazole ring, a triazole ring, or an oxadiazole ring.

[0397] Furthermore, heteroaromatic rings include fused heteroaromatic rings having a fused ring structure. Examples of fused heteroaromatic rings include quinoline rings, benzoquinoline rings, quinoxaline rings, dibenzoquinoxaline rings, quinazoline rings, benzoquinazoline rings, dibenzoquinazoline rings, phenanthroline rings, phlodiazine rings, and benzimidazole rings.

[0398] For example, among heteroaromatic compounds containing one or more of nitrogen, oxygen, or sulfur in addition to carbon, heteroaromatic compounds having a five-membered ring structure include heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, and heteroaromatic compounds having a benzimidazole ring.

[0399] Furthermore, among heteroaromatic compounds that contain one or more elements other than carbon, such as nitrogen, oxygen, or sulfur, examples of heteroaromatic compounds having a six-membered ring structure include heteroaromatic compounds having heteroaromatic rings such as pyridine rings, diazine rings (including pyrimidine rings, pyrazine rings, pyridazine rings, etc.), triazine rings, and polyazole rings. Note that while heteroaromatic compounds with a structure in which pyridine rings are linked, examples include heteroaromatic compounds having a bipyridine structure and heteroaromatic compounds having a terpyridine structure.

[0400] Furthermore, examples of heteroaromatic compounds having a fused ring structure that partially includes the above-mentioned six-membered ring structure include heteroaromatic compounds having fused heteroaromatic rings such as quinoline rings, benzoquinoline rings, quinoxaline rings, dibenzoquinoxaline rings, phenanthroline rings, phlodiazine rings (including structures in which an aromatic ring is fused to the furan ring of a phlodiazine ring), and benzimidazole rings.

[0401] Specific examples of heteroaromatic compounds having the above-mentioned five-membered ring structure (polyazole ring (including imidazole ring, triazole ring, oxadiazole ring), oxazole ring, thiazole ring, benzimidazole ring, etc.) include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviated as PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviated as OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole-2-yl)phenyl]-9H-carbazole (abbreviated as CO11), and 3-(4-biphenylyl)-4-phenyl Examples include phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviated as TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviated as p-EtTAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviated as TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), and 4,4'-bis(5-methylbenzoxazole-2-yl)stilbene (abbreviated as BzOs).

[0402] Specific examples of heteroaromatic compounds having the above-mentioned six-membered ring structure (including heteroaromatic rings having pyridine rings, diazine rings, triazine rings, etc.) include heteroaromatic compounds containing a pyridine ring, such as 3,5-bis[3-(9H-carbazole-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5 - Triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylene-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (Abbreviation: mTpBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluorene)-2-yl]-1,3,5-triazine (Abbreviation: BP-SFTzn), 2,6-bis(4-naphthalene-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (Abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (Abbreviation: PCDBfTzn), 2-[1,1'-bi Heteroaromatic compounds containing heteroaromatic rings having a triazine ring, such as phenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), mFBPTzn, 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-Bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2 PPm), 4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalene-2-yl)-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtBP Nfpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzoflo[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl- Examples include heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 3-yl)naphtho[1',2':4,5]flo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm) and 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzoflo[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). Note that the above aromatic compounds containing heteroaromatic rings include heteroaromatic compounds having condensed heteroaromatic rings.

[0403] Other examples include 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), and 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazole-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6 Examples include heteroaromatic compounds containing heteroaromatic rings having a diazine (pyrimidine) ring, such as mBP-4Cz2PPm, and heteroaromatic compounds containing heteroaromatic rings having a triazine ring, such as 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), and 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenantrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn).

[0404] Specific examples of heteroaromatic compounds having a fused ring structure that partially includes a 6-membered ring structure (heteroaromatic compounds having a fused ring structure) include vasophenanthroline (abbreviation: Bphen), vasocuproin (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2-(1,3-phenylene)bis[9-phenyl-1,10-phenanthroline] (abbreviation: mPPhen2P), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), and 2-[3'-(dibenzothiophen-4-yl) [biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPD Examples include heteroaromatic compounds having a quinoxaline ring, such as Bq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2mpPCBPDBq, etc.

[0405] In addition to the heteroaromatic compounds shown above, the following metal complexes can be used in the electron transport layers (114, 114a, 114b). Examples include metal complexes having a quinoline ring or benzoquinoline ring, such as tris(8-quinolinolato)aluminum(III) (abbreviated as Alq3), Almq3, 8-quinolinolatritium(I) (abbreviated as Liq), BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviated as BAlq), and bis(8-quinolinolato)zinc(II) (abbreviated as Znq); and metal complexes having an oxazole ring or thiazole ring, such as bis[2-(2-benzoxazollyl)phenolato]zinc(II) (abbreviated as ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviated as ZnBTZ).

[0406] Furthermore, polymer compounds such as poly(2,5-pyridinediyl) (abbreviated as PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviated as PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviated as PF-BPy) can also be used as electron transport materials.

[0407] Furthermore, the electron transport layers (114, 114a, 114b) may be not only single layers, but also have a structure in which two or more layers made of the above material are stacked.

[0408] <Electron injection layer> The electron injection layers (115, 115a, 115b) are layers containing a material with high electron injection capabilities. Furthermore, the electron injection layers (115, 115a, 115b) are layers for increasing the electron injection efficiency from the second electrode 102, and it is preferable to use a material in which the difference between the work function value of the material used for the second electrode 102 and the LUMO level value of the material used for the electron injection layers (115, 115a, 115b) is small (0.5 eV or less). Therefore, the electron injection layer 115 contains lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), Liq, 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Rare earth metals or rare earth metal compounds such as erbium fluoride (ErF3) and ytterbium (Yb) can also be used. The electron injection layers (115, 115a, 115b) may be formed by mixing multiple types of the above materials, or by stacking multiple types of the above materials. Electrides may also be used in the electron injection layers (115, 115a, 115b). Examples of electrides include substances obtained by adding a high concentration of electrons to a mixed oxide of calcium and aluminum. The materials that constitute the electron transport layers (114, 114a, 114b) described above can also be used.

[0409] Furthermore, a mixed material comprising an organic compound and an electron donor may be used in the electron injection layers (115, 115a, 115b). Such a mixed material exhibits excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material with excellent electron transport properties, and specifically, for example, electron transport materials (metal complexes and heteroaromatic compounds, etc.) used in the electron transport layers (114, 114a, 114b) described above can be used. The electron donor can be any substance that exhibits electron-donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, and rare earth metals are preferred, such as lithium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides and alkaline earth metal oxides are also preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. Furthermore, organic compounds such as tetrathiafulvalene (abbreviated as TTF) can also be used. Furthermore, multiple layers of these materials may be used.

[0410] In addition, a mixed material consisting of an organic compound and a metal may be used for the electron injection layers (115, 115a, 115b). The organic compound used here preferably has a LUMO level of -3.6 eV or higher and -2.3 eV or lower. Furthermore, a material having lone pairs of electrons is preferred.

[0411] Therefore, as the organic compound used in the above-mentioned mixed material, a mixed material obtained by mixing a heteroaromatic compound with a metal, as described above for use in an electron transport layer, may be used. Preferred heteroaromatic compounds include materials having lone pairs of electrons, such as heteroaromatic compounds having a 5-membered ring structure (imidazole ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, benzimidazole ring, etc.), heteroaromatic compounds having a 6-membered ring structure (pyridine ring, diazine ring (including pyrimidine ring, pyrazine ring, pyridazine ring, etc.), triazine ring, bipyridine ring, terpyridine ring, etc.), and heteroaromatic compounds having a fused ring structure that partially includes a 6-membered ring structure (quinoline ring, benzoquinoline ring, quinoxaline ring, dibenzoquinoxaline ring, phenanthroline ring, etc.). Specific materials have been described above, so further explanation is omitted here.

[0412] Furthermore, it is preferable to use transition metals belonging to Group 5, Group 7, Group 9, or Group 11 of the periodic table and materials belonging to Group 13 as the metals used in the above-mentioned mixed material, such as Ag, Cu, Al, or In. In this case, the organic compound forms a half-occupied molecular orbital (SOMO) with the transition metal.

[0413] For example, when amplifying the light obtained from the light-emitting layer 113b, it is preferable to form the optical distance between the second electrode 102 and the light-emitting layer 113b to be less than 1 / 4 of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, this can be adjusted by changing the film thickness of the electron transport layer 114b or the electron injection layer 115b.

[0414] Furthermore, as shown in the light-emitting device in Figure 2(D), by providing a charge generation layer 106 between two EL layers (103a, 103b), a structure in which multiple EL layers are stacked between a pair of electrodes (also called a tandem structure) can be created.

[0415] <Charge generation layer> The charge generation layer 106 has the function of injecting electrons into the EL layer 103a and holes into the EL layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be configured with electron acceptors added to a hole transport material, or with electron donors added to an electron transport material. Alternatively, both of these configurations may be laminated. By forming the charge generation layer 106 using the materials described above, the increase in driving voltage when the EL layers are laminated can be suppressed.

[0416] Furthermore, the first organic compound described in Embodiment 1 can be used in the charge generation layer 106.

[0417] In the charge generation layer 106, if an electron acceptor is added to a hole-transporting material which is an organic compound, the material shown in this embodiment can be used as the hole-transporting material. Examples of electron acceptors include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviated as F4-TCNQ), chloranil, etc. Other examples include oxides of metals belonging to groups 4 through 8 of the periodic table. Specifically, examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

[0418] Furthermore, in the charge generation layer 106, if an electron donor is added to the electron transport material, the material shown in this embodiment can be used as the electron transport material. As the electron donor, alkali metals, alkaline earth metals, rare earth metals, or metals belonging to groups 2 and 13 of the periodic table, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc., are preferred. Organic compounds such as tetrathianaphthalene may also be used as electron donors.

[0419] Although Figure 2(D) shows a configuration in which two EL layers 103 are stacked, a stacked structure of three or more EL layers may be used by providing a charge generation layer between different EL layers.

[0420] <Circuit board> The light-emitting device shown in this embodiment can be formed on various substrates. The type of substrate is not limited to any particular type. Examples of substrates include semiconductor substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates with stainless steel foil, tungsten substrates, substrates with tungsten foil, flexible substrates, laminated films, paper containing fibrous materials, or base films.

[0421] Examples of glass substrates include barium borosilicate glass, aluminobrosilicate glass, or soda-lime glass. Examples of flexible substrates, laminated films, and base films include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic vapor-deposited films, or paper.

[0422] In this embodiment, the light-emitting device can be fabricated using vapor-phase methods such as vapor deposition, spin coating, and liquid-phase methods such as inkjet. When using vapor deposition, physical vapor deposition methods (PVD) such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD), can be used. In particular, the various functional layers included in the EL layer of the light-emitting device (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) can be formed by methods such as vapor deposition (vacuum deposition, etc.), coating (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing (inkjet, screen printing, offset printing, flexographic printing, gravure printing, microcontact printing, etc.).

[0423] Furthermore, when applying the above-mentioned coating method, printing method, or other film formation method, polymer compounds (oligomers, dendrimers, polymers, etc.), medium-molecular-weight compounds (compounds in the intermediate region between low-molecular-weight and high-molecular-weight compounds: molecular weight 400 to 4000), inorganic compounds (quantum dot materials, etc.) can be used. As for quantum dot materials, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, core-type quantum dot materials, etc., can be used.

[0424] The layers constituting the EL layer 103 of the light-emitting device shown in this embodiment (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, electron injection layer 115) are not limited to the materials shown in this embodiment, and other materials can be used in combination as long as they can satisfy the function of each layer.

[0425] In this specification, the terms "layer" and "film" may be used interchangeably as appropriate.

[0426] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0427] (Embodiment 3) In this embodiment, a specific configuration example and an example of a manufacturing method for a light-emitting device, which is one aspect of the present invention, will be described, and the light-receiving device 700 will be described. The light-receiving device 700 can also be called a light-emitting device because it has a light-emitting device, a light-receiving device because it has a light-receiving device, and a display panel or display device because it can be applied to the display section of electronic equipment, etc.

[0428] <Example configuration of the light-receiving and light-emitting device 700> The light-receiving and light-emitting device 700 shown in Figure 3(A) includes light-emitting devices 550B, 550G, 550R, and a light-receiving device 550PS. The light-emitting devices 550B, 550G, 550R, and 550PS are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes circuits such as drive circuits composed of multiple transistors, as well as wiring to electrically connect them. These drive circuits are, for example, electrically connected to the light-emitting devices 550B, 550G, 550R, and 550PS, respectively, and can drive them. Furthermore, the light-receiving and light-emitting device 700 includes an insulating layer 705 on the functional layer 520 and on each device (light-emitting device and light-receiving device), and the insulating layer 705 has the function of bonding the functional layer 520 to the second substrate 770.

[0429] The light-emitting devices 550B, 550G, and 550R have the device structure shown in Embodiment 1, and the light-receiving device 550PS has the device structure described later in Embodiment 8. In this embodiment, the case in which each device (multiple light-emitting devices and light-receiving devices) can be formed separately is described, but the present invention is not limited to this.

[0430] In this specification, a structure in which the light-emitting layers of each color light-emitting device (e.g., blue (B), green (G), and red (R)) and the light-receiving layer of the light-receiving device are made separately or painted separately may be referred to as an SBS (Side By Side) structure. In the light-emitting and light-receiving device 700 shown in Figure 3(A), the light-emitting device 550B, light-emitting device 550G, light-emitting device 550R, and light-receiving device 550PS are arranged in this order, but one aspect of the present invention is not limited to this configuration. For example, in the light-emitting and light-receiving device 700, these devices may be arranged in the order of light-emitting device 550R, light-emitting device 550G, light-emitting device 550B, and light-receiving device 550PS.

[0431] In Figure 3(A), the light-emitting device 550B has an electrode 551B, an electrode 552, and an EL layer 103B. The light-emitting device 550G has an electrode 551G, an electrode 552, and an EL layer 103G. The light-emitting device 550R has an electrode 551R, an electrode 552, and an EL layer 103R. The light-receiving device 550PS has an electrode 551PS, an electrode 552, and a light-receiving layer 103PS. The specific configuration of each layer of the light-receiving device is as shown in Embodiment 8. The specific configuration of each layer of the light-emitting device is as shown in Embodiment 2. The EL layers 103B, 103G, and 103R have a laminated structure consisting of multiple layers with different functions, including light-emitting layers (105B, 105G, 105R). The light-receiving layer 103PS has a laminated structure consisting of multiple layers with different functions, including an active layer 105PS. Figure 3(A) illustrates the case where the EL layer 103B has a hole injection / transport layer 104B, an emissive layer 105B, an electron transport layer 108B, and an electron injection layer 109; the case where the EL layer 103G has a hole injection / transport layer 104G, an emissive layer 105G, an electron transport layer 108G, and an electron injection layer 109; the case where the EL layer 103R has a hole injection / transport layer 104R, an emissive layer 105R, an electron transport layer 108R, and an electron injection layer 109; and the case where the light-receiving layer 103PS has a first transport layer 104PS, an active layer 105PS, a second transport layer 108PS, and an electron injection layer 109, but the present invention is not limited thereto. The hole injection / transport layers (104B, 104G, 104R) refer to layers having the functions of the hole injection layer and hole transport layer as shown in Embodiment 2, and may have a laminated structure.

[0432] Furthermore, the electron transport layers (108B, 108G, 108R) and the second transport layer 108PS may have a function to block holes moving from the anode side through the EL layer (103B, 103G, 103R) and the photodetector layer 103PS to the cathode side. In addition, the electron injection layer 109 may have a laminated structure formed using some or all different materials.

[0433] Furthermore, as shown in Figure 3(A), insulating layers 107 may be formed on the sides (or edges) of the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of the EL layers (103B, 103G, 103R), and on the sides (or edges) of the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the light-receiving layer 103PS. The insulating layer 107 is formed in contact with the sides (or edges) of the EL layers (103B, 103G, 103R) and the light-receiving layer 103PS. This prevents oxygen, moisture, or their constituent elements from penetrating into the interior from the sides of the EL layers (103B, 103G, 103R) and the light-receiving layer 103PS. For example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used for the insulating layer 107. The insulating layer 107 may also be formed by laminating the aforementioned materials. Sputtering, CVD, MBE, PLD, ALD, etc. can be used to form the insulating layer 107, but the ALD method, which has good coverage, is more preferable. The insulating layer 107 has a structure that continuously covers a part of the EL layers (103B, 103G, 103R) of adjacent light-emitting devices, or a part of the side (or edge) of the light-receiving layer 103PS of a light-receiving device. For example, in Figure 3(A), a portion of the EL layer 103B of the light-emitting device 550B and a portion of the EL layer 103G of the light-emitting device 550G are covered by the insulating layer 107. Furthermore, it is preferable that a partition wall 528 made of insulating material is formed in the region covered by the insulating layer 107, as shown in Figure 3(A).

[0434] Furthermore, an electron injection layer 109 is formed on the electron transport layer (108B, 108G, 108R), which is part of the EL layer (103B, 103G, 103R), the second transport layer 108PS, which is part of the light-receiving layer 103PS, and the insulating layer 107. The electron injection layer 109 may also be a stacked structure of two or more layers (for example, stacking layers with different electrical resistances).

[0435] Furthermore, electrode 552 is formed on the electron injection layer 109. Note that electrodes (551B, 551G, 551R) and electrode 552 have overlapping regions. Additionally, there is an emissive layer 105B between electrode 551B and electrode 552, an emissive layer 105G between electrode 551G and electrode 552, an emissive layer 105R between electrode 551R and electrode 552, and a light-receiving layer 103PS between electrode 551PS and electrode 552.

[0436] Furthermore, the EL layers (103B, 103G, 103R) shown in Figure 3(A) have the same configuration as the EL layer 103 described in Embodiments 1 and 2. The light-receiving layer 103PS has the same configuration as the light-receiving layer described later in Embodiment 8. Additionally, for example, the light-emitting layer 105B can emit blue light, the light-emitting layer 105G can emit green light, and the light-emitting layer 105R can emit red light.

[0437] A partition wall 528 is provided in the region enclosed by the electron injection layer 109 and the insulating layer 107. As shown in Figure 3(A), the electrodes (551B, 551G, 551R, 551PS) of each light-emitting device, a portion of the EL layer (103B, 103G, 103R), and a portion of the light-receiving layer 103PS are in contact with the partition wall 528 at their sides (or ends) via the insulating layer 107.

[0438] In each EL layer and photodetector layer, the hole injection layer, particularly the hole transport region located between the anode and the light-emitting layer, and between the anode and the active layer, often has high conductivity. Therefore, if it is formed as a common layer between adjacent devices, it may cause crosstalk. Accordingly, as shown in this example configuration, by providing a partition wall 528 made of insulating material between each EL layer and the photodetector layer, it is possible to suppress the occurrence of crosstalk between adjacent devices.

[0439] Furthermore, in the manufacturing method described in this embodiment, the sides (or edges) of the EL layer and the light-receiving layer are exposed during the patterning process. As a result, the EL layer and the light-receiving layer are more susceptible to deterioration due to the intrusion of oxygen, water, etc., from the sides (or edges) of the EL layer and the light-receiving layer. Therefore, by providing the partition wall 528, it is possible to suppress the deterioration of the EL layer and the light-receiving layer during the manufacturing process.

[0440] Furthermore, by providing a partition wall 528, it is possible to flatten the recess formed between adjacent devices. Flattening the recess helps to suppress disconnection of the electrodes 552 formed on each EL layer and light-receiving layer. As the insulating material used to form the partition wall 528, organic materials such as acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used. Photosensitive resins such as photoresists can also be used. The photosensitive resin can be either a positive-type or negative-type material.

[0441] By using a photosensitive resin, the partition wall 528 can be fabricated using only the exposure and development processes. Alternatively, the partition wall 528 may be formed using a negative-type photosensitive resin (e.g., a resist material). Furthermore, when an insulating layer having an organic material is used as the partition wall 528, it is preferable to use a material that absorbs visible light. By using a material that absorbs visible light for the partition wall 528, the light emitted from the EL layer can be absorbed by the partition wall 528, thereby suppressing light (stray light) that may leak into the adjacent EL layer and light-receiving layer. Therefore, a display panel with high display quality can be provided.

[0442] Furthermore, the difference between the height of the upper surface of the partition wall 528 and the height of the upper surface of any of the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS is preferably 0.5 times or less the thickness of the partition wall 528, and more preferably 0.3 times or less. Also, for example, the partition wall 528 may be provided such that the upper surface of any of the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS is higher than the upper surface of the partition wall 528. Also, for example, the partition wall 528 may be provided such that the upper surface of the partition wall 528 is higher than the upper surface of the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS.

[0443] In a high-resolution light-emitting and receiving device (display panel) with a resolution exceeding 1000 ppi, if electrical conductivity is detected between the EL layer 103B, EL layer 103G, EL layer 103R, and the light-receiving layer 103PS, a crosstalk phenomenon occurs, narrowing the displayable color gamut of the light-emitting and receiving device. By providing a partition wall 528 in a high-resolution display panel exceeding 1000 ppi, preferably a high-resolution display panel exceeding 2000 ppi, and more preferably an ultra-high-resolution display panel exceeding 5000 ppi, a display panel capable of displaying vivid colors can be provided.

[0444] Furthermore, Figures 3(B) and 3(C) show schematic top views of the light-receiving device 700 corresponding to the dashed line Ya-Yb in the cross-sectional view of Figure 3(A). That is, the light-emitting devices 550B, 550G, and 550R are each arranged in a matrix. Figure 3(B) shows a so-called stripe arrangement in which light-emitting devices of the same color are arranged in the X direction. Figure 3(C) shows a configuration in which light-emitting devices of the same color are arranged in the X direction, but a pattern is formed for each pixel. Note that the arrangement method of the light-emitting devices is not limited to these, and arrangement methods such as delta arrangement and zigzag arrangement may be applied, or pentile arrangement and diamond arrangement may be used.

[0445] Furthermore, since the separation process of each EL layer (103B, 103G, 103R) and the light-receiving layer 103PS is performed using photolithography, a high-definition light-receiving device (display panel) can be manufactured. In addition, the sides (edges) of each EL layer processed by photolithography have a shape that is substantially the same surface (or is substantially located on the same plane). Similarly, the sides (edges) of each light-receiving layer processed by photolithography have a shape that is substantially the same surface (or is substantially located on the same plane). At this time, the width (SE) of the gap 580 between each EL layer and the light-receiving layer is preferably 5 μm or less, and more preferably 1 μm or less.

[0446] In EL layers, the hole injection layer, particularly the hole transport region located between the anode and the light-emitting layer, often has high conductivity. Therefore, if it is formed as a common layer for adjacent light-emitting devices, it can cause crosstalk. Consequently, by separating the EL layer using photolithography, as shown in this example configuration, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0447] Furthermore, Figure 3(D) is a schematic cross-sectional view corresponding to the dashed line C1-C2 in Figures 3(B) and 3(C). Figure 3(D) shows the connection portion 130 where the connecting electrode 551C and electrode 552 are electrically connected. At the connection portion 130, electrode 552 is provided in contact with the connecting electrode 551C. In addition, a partition wall 528 is provided covering the end of the connecting electrode 551C.

[0448] <Example of a manufacturing method for a light-receiving device> As shown in Figure 4(A), electrodes 551B, 551G, 551R, and 551PS are formed. For example, a conductive film is formed on a functional layer 520 formed on the first substrate 510, and then processed into a predetermined shape using photolithography.

[0449] Conductive films can be formed using methods such as sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), vacuum deposition, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0450] In addition to the photolithography method described above, conductive films may also be processed using nanoimprint lithography, sandblasting, lift-off methods, etc. Island-like thin films may also be directly formed using a film deposition method that utilizes a shielding mask such as a metal mask.

[0451] There are two main methods of photolithography. One method involves forming a resist mask on a thin film to be processed, processing the thin film by etching or other means, and then removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into a desired shape. The former method involves heat treatment steps such as heating after resist coating (PAB: Pre-Applied Bake) and heating after exposure (PEB: Post-Exposure Bake). In one aspect of the present invention, lithography is used not only for processing conductive films but also for processing thin films (films made of organic compounds, or films containing organic compounds in part) used to form an EL layer.

[0452] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of light for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0453] For etching thin films using a resist mask, methods such as dry etching, wet etching, and sandblasting can be used.

[0454] Next, as shown in Figure 4(B), a hole injection / transport layer 104B, an emissive layer 105B, and an electron transport layer 108B are formed on electrodes 551B, 551G, 551R, and 551PS, respectively. For example, vacuum deposition can be used to form the hole injection / transport layer 104B, the emissive layer 105B, and the electron transport layer 108B. Furthermore, a sacrificial layer 110B is formed on the electron transport layer 108B. In forming the hole injection / transport layer 104B, the emissive layer 105B, and the electron transport layer 108B, the material shown in Embodiment 2 can be used.

[0455] Furthermore, it is preferable to use a film for the sacrificial layer 110B that has high resistance to etching of the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B, i.e., a film with a high etching selectivity ratio. It is also preferable that the sacrificial layer 110B has a laminated structure of a first sacrificial layer and a second sacrificial layer with different etching selectivity ratios. Additionally, the sacrificial layer 110B can be a film that can be removed by a wet etching method that causes minimal damage to the EL layer 103B. Oxalic acid can be used as the etching material for wet etching.

[0456] As the sacrificial layer 110B, for example, an inorganic film such as a metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film can be used. Furthermore, the sacrificial layer 110B can be formed by various film deposition methods such as sputtering, vapor deposition, CVD, and ALD.

[0457] As the sacrificial layer 110B, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials, can be used. In particular, it is preferable to use low-melting-point materials such as aluminum or silver.

[0458] Furthermore, metal oxides such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used as the sacrificial layer 110B. In addition, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0459] Furthermore, the above-mentioned method can also be applied when element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) is used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0460] Furthermore, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as the sacrificial layer 110B.

[0461] Furthermore, it is preferable to use a material that is soluble in a chemically stable solvent relative to the electron transport layer 108B located at the top as the sacrificial layer 110B. In particular, a material soluble in water or alcohol can be suitably used for the sacrificial layer 110B. When forming the sacrificial layer 110B, it is preferable to coat it using a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B.

[0462] Furthermore, when the sacrificial layer 110B is to be made into a laminated structure, the layer formed from the above-mentioned material can be designated as the first sacrificial layer, and a second sacrificial layer can be formed on top of it to create a laminated structure.

[0463] In this case, the second sacrificial layer is a film used as a hard mask when etching the first sacrificial layer. Furthermore, the first sacrificial layer is exposed during processing of the second sacrificial layer. Therefore, the first and second sacrificial layers are selected based on a combination of films that have a high etching selectivity ratio for each other. Thus, the film that can be used for the second sacrificial layer can be selected according to the etching conditions for both the first and second sacrificial layers.

[0464] For example, when dry etching using a fluorine-containing gas (also called a fluorine-based gas) is used for etching the second sacrificial layer, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, alloys containing molybdenum and niobium, or alloys containing molybdenum and tungsten can be used for the second sacrificial layer. Here, metal oxide films such as IGZO and ITO can be used for the first sacrificial layer as films that allow for a higher selectivity ratio for etching (i.e., a slower etching rate) compared to dry etching using the above-mentioned fluorine-based gas.

[0465] However, the second sacrificial layer can be selected from a variety of materials, depending on the etching conditions of the first sacrificial layer and the etching conditions of the second sacrificial layer. For example, it can be selected from among the films that can be used for the first sacrificial layer.

[0466] Furthermore, a nitride film can be used as the second sacrificial layer. Specifically, nitrides such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, and germanium nitride can be used.

[0467] Alternatively, an oxide film can be used as the second sacrificial layer. Typically, oxide films or oxynitride films such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, and hafnium oxynitride can be used.

[0468] Next, as shown in Figure 4(C), a resist is applied to the sacrificial layer 110B, and the resist is formed into the desired shape (resist mask: REG) using photolithography. Note that this method involves heat treatment steps such as heating after resist application (PAB: Pre-Applied Bake) and heating after exposure (PEB: Post-Exposure Bake). For example, the PAB temperature is around 100°C, and the PEB temperature is around 120°C. Therefore, the light-emitting device must be able to withstand these processing temperatures.

[0469] Next, using the obtained resist mask REG, a portion of the sacrificial layer 110B not covered by the resist mask REG is removed by etching. After removing the resist mask REG, a portion of the hole injection / transport layer 104B, light-emitting layer 105B, and electron transport layer 108B not covered by the sacrificial layer 110B is removed by etching, and the hole injection / transport layer 104B, light-emitting layer 105B, and electron transport layer 108B are processed into a shape having sides on the electrode 551B (or with exposed sides), or into a strip shape extending in a direction intersecting the plane of the paper. Dry etching is preferred for etching. If the sacrificial layer 110B has a laminated structure of the first sacrificial layer and the second sacrificial layer, a portion of the second sacrificial layer may be etched with the resist mask REG, then the resist mask REG is removed, and a portion of the first sacrificial layer is etched using the second sacrificial layer as a mask, and the hole injection / transport layer 104B, light-emitting layer 105B, and electron transport layer 108B are processed into a predetermined shape. These etching processes yield the shape shown in Figure 5(A).

[0470] Next, as shown in Figure 5(B), a hole injection / transport layer 104G, an emissive layer 105G, and an electron transport layer 108G are formed on the sacrificial layer 110B, electrode 551G, electrode 551R, and electrode 551PS. For the formation of the hole injection / transport layer 104G, emissive layer 105G, and electron transport layer 108G, the materials shown in Embodiment 2 can be used. For example, vacuum deposition can be used to form the hole injection / transport layer 104G, emissive layer 105G, and electron transport layer 108G.

[0471] Next, as shown in Figure 5(C), a sacrificial layer 110G is formed on the electron transport layer 108G, a resist is applied on the sacrificial layer 110G, and the resist is formed into a desired shape (resist mask: REG) using photolithography. A portion of the sacrificial layer 110G not covered by the obtained resist mask REG is removed by etching. After removing the resist mask REG, a portion of the hole injection / transport layer 104G, light-emitting layer 105G, and electron transport layer 108G not covered by the sacrificial layer 110G is removed by etching, and the hole injection / transport layer 104G, light-emitting layer 105G, and electron transport layer 108G are processed into a shape with sides on the electrode 551G (or with exposed sides), or into a strip shape extending in a direction intersecting the paper plane. Dry etching is preferred for etching. Furthermore, the sacrificial layer 110G can be made of the same material as the sacrificial layer 110B. If the sacrificial layer 110G has a laminated structure with the first sacrificial layer and the second sacrificial layer, a portion of the second sacrificial layer may be etched with a resist mask REG, then the resist mask REG is removed, and the second sacrificial layer is used as a mask to etch a portion of the first sacrificial layer, thereby processing the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G into a predetermined shape. These etching processes result in the shape shown in Figure 6(A).

[0472] Next, as shown in Figure 6(B), a hole injection / transport layer 104R, an emissive layer 105R, and an electron transport layer 108R are formed on the sacrificial layer 110B, sacrificial layer 110G, electrode 551R, and electrode 551PS. For the formation of the hole injection / transport layer 104R, emissive layer 105R, and electron transport layer 108R, the material shown in Embodiment 2 can be used. For example, a vacuum deposition method can be used to form the hole injection / transport layer 104R, emissive layer 105R, and electron transport layer 108R.

[0473] Next, as shown in Figure 6(C), a sacrificial layer 110R is formed on the electron transport layer 108R, a resist is applied on the sacrificial layer 110R, and the resist is formed into a desired shape (resist mask: REG) using photolithography. A portion of the sacrificial layer 110R not covered by the obtained resist mask REG is removed by etching. After removing the resist mask REG, a portion of the hole injection / transport layer 104R, light-emitting layer 105R, and electron transport layer 108R not covered by the sacrificial layer 110R is removed by etching, and the hole injection / transport layer 104R, light-emitting layer 105R, and electron transport layer 108R are processed into a shape with sides on the electrode 551R (or with exposed sides), or into a strip shape extending in a direction intersecting the paper plane. Dry etching is preferred for etching. Furthermore, the sacrificial layer 110R can be made of the same material as the sacrificial layer 110B. If the sacrificial layer 110R has a laminated structure with the first sacrificial layer and the second sacrificial layer, a portion of the second sacrificial layer may be etched with a resist mask REG, then the resist mask REG is removed, and the second sacrificial layer is used as a mask to etch a portion of the first sacrificial layer, thereby processing the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R into a predetermined shape. These etching processes result in the shape shown in Figure 7(A).

[0474] Next, as shown in Figure 7(B), a first transport layer 104PS, an active layer 105PS, and a second transport layer 108PS are formed on the sacrificial layer 110B, sacrificial layer 110G, sacrificial layer 110R, and electrode 551PS. In forming the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS, the material shown in Embodiment 1 can be used. For example, a vacuum deposition method can be used to form the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS.

[0475] Next, as shown in Figure 7(C), a sacrificial layer 110PS is formed on the second transport layer 108PS, a resist is applied on the sacrificial layer 110PS, and the resist is formed into a desired shape (resist mask: REG) using photolithography. A portion of the sacrificial layer 110PS not covered by the obtained resist mask REG is removed by etching. After removing the resist mask REG, a portion of the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS not covered by the sacrificial layer 110PS is removed by etching, and the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS are processed into a shape having sides on the electrode 551PS (or with exposed sides), or a strip shape extending in a direction intersecting the paper plane. Dry etching is preferred for etching. Furthermore, the sacrificial layer 110PS can be made of the same material as the sacrificial layer 110B. If the sacrificial layer 110PS has a laminated structure with the first sacrificial layer and the second sacrificial layer, a portion of the second sacrificial layer may be etched with a resist mask REG, then the resist mask REG is removed, and a portion of the first sacrificial layer is etched using the second sacrificial layer as a mask, thereby processing the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS into a predetermined shape. These etching processes result in the shape shown in Figure 7(D).

[0476] Next, as shown in Figure 8(A), an insulating layer 107 is formed on the sacrificial layer 110B, sacrificial layer 110G, sacrificial layer 110R, and sacrificial layer 110PS.

[0477] For example, the ALD method can be used to form the insulating layer 107. In this case, as shown in Figure 8(A), the insulating layer 107 is formed in contact with the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of each light-emitting device, as well as the sides (ends) of the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the light-receiving device. This suppresses the penetration of oxygen, moisture, or their constituent elements into the interior from each side. As for the material used for the insulating layer 107, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used.

[0478] Next, as shown in Figure 8(B), after removing a portion of the insulating layer 107 and the sacrificial layers (110B, 110G, 110R, 110PS), an electron injection layer 109 is formed on the insulating layer 107, the electron transport layers (108B, 108G, 108R), and the second transport layer 108PS. In forming the electron injection layer 109, the material shown in Embodiment 2 can be used. The electron injection layer 109 is formed, for example, by vacuum deposition. The electron injection layer 109 has a structure in which it contacts the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of each light-emitting device, as well as the sides (ends) of the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the photodetector device via the insulating layer 107.

[0479] Next, as shown in Figure 8(C), electrodes 552 are formed. Electrodes 552 are formed, for example, using a vacuum deposition method. The electrodes 552 are formed on the electron injection layer 109. The electrodes 552 have a structure that allows them to contact the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of each light-emitting device, as well as the sides (ends) of the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the photodetector, via the electron injection layer 109 and the insulating layer 107. This prevents electrical short circuits between the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of each light-emitting device, as well as between the first transport layer 104PS, active layer 105PS, second transport layer 108PS of the photodetector and the electrode 552.

[0480] Through the above process, the EL layer 103B, EL layer 103G, EL layer 103R, and light-receiving layer 103PS of the light-emitting device 550B, light-emitting device 550G, light-emitting device 550R, and light-receiving device 550PS can be separated and processed, respectively.

[0481] Furthermore, since the separation process of these EL layers (103B, 103G, 103R) and the light-receiving layer 103PS is performed using photolithography, a high-definition light-receiving device (display panel) can be manufactured. In addition, the sides (edges) of each layer of the EL layer processed by photolithography have a shape that is substantially the same surface (or is located substantially on the same plane). Similarly, the sides (edges) of each layer of the light-receiving layer processed by photolithography have a shape that is substantially the same surface (or is located substantially on the same plane).

[0482] Furthermore, the hole injection / transport layers (104B, 104G, 104R) in these EL layers, and the first transport layer 104PS in the photodetector layer, often have high conductivity. Therefore, if they are formed as common layers between adjacent devices, they can cause crosstalk. Accordingly, as shown in this example configuration, separating each layer by pattern formation using photolithography makes it possible to suppress the occurrence of crosstalk between adjacent devices.

[0483] Furthermore, in each EL layer (103B, 103G, and 103R) of this configuration, the hole injection / transport layer (104B, 104G, 104R), the light-emitting layer (105B, 105G, 105R), and the electron transport layer (108B, 108G, 108R) contained within each EL layer (103B, 103G, and 103R), as well as the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the light-receiving layer 103PS of the light-receiving device, are patterned using photolithography during the separation process. As a result, the sides (edges) of each layer of the processed EL layer have substantially the same surface (or are located on substantially the same plane). Similarly, the sides (edges) of each layer of the light-receiving layer processed by photolithography have substantially the same surface (or are located on substantially the same plane).

[0484] Furthermore, the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) contained in each EL layer (103B, 103G, 103R) of each light-emitting device, and the first transport layer 104PS, active layer 105PS, and second transport layer 108PS of the light-receiving layer 103PS of the light-receiving device, are patterned using photolithography during the separation process. As a result, each processed side (edge) has a gap 580 between it and the adjacent device. In Figure 8(C), if the gap 580 is represented by SE as the distance between the EL layers or light-receiving layers of adjacent devices, a smaller distance SE allows for a higher aperture ratio and higher resolution. On the other hand, the larger the distance SE, the more tolerance is given to variations in the manufacturing process between adjacent devices, thereby increasing the manufacturing yield. Since the light-emitting devices and photodetectors manufactured according to this specification are suitable for miniaturization processes, the distance SE between the EL layer or photodetector layer of adjacent devices can be 0.5 μm or more and 5 μm or less, preferably 1 μm or more and 3 μm or less, more preferably 1 μm or more and 2.5 μm or less, and even more preferably 1 μm or more and 2 μm or less. Typically, the distance SE is preferably 1 μm or more and 2 μm or less (for example, 1.5 μm or nearby).

[0485] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices. Because MML structured light-receiving devices are fabricated without a metal mask, they offer greater design flexibility in terms of pixel arrangement and pixel shape compared to FMM or MM structured light-receiving devices.

[0486] Furthermore, the island-shaped EL layers in MML structured light-emitting devices are not formed by the pattern on the metal mask, but rather by processing after the EL layer has been deposited. Therefore, it is possible to realize light-emitting devices with higher resolution or higher aperture ratios than before. In addition, since the EL layer can be manufactured separately for each color, it is possible to realize light-emitting devices with extremely vivid colors, high contrast, and high display quality. Moreover, by providing a sacrificial layer on the EL layer, the damage the EL layer receives during the manufacturing process can be reduced, thereby increasing the reliability of the light-emitting device.

[0487] In the light-emitting devices 550B, 550G, and 550R shown in Figures 3(A) and 8(C), the width of the EL layer (103B, 103G, 103R) is approximately equal to the width of the electrodes (551B, 551G, 551R), and in the light-receiving device 550PS, the width of the light-receiving layer 103PS is approximately equal to the width of the electrode 551PS; however, the present invention is not limited to these embodiments.

[0488] In the light-emitting devices 550B, 550G, and 550R, the width of the EL layer (103B, 103G, 103R) may be smaller than the width of the electrodes (551B, 551G, 551R). Also, in the light-receiving device 550PS, the width of the light-receiving layer 103PS may be smaller than the width of the electrode 551PS. Figure 8(D) shows an example in the light-emitting devices 550B and 550G where the width of the EL layer (103B, 103G) is smaller than the width of the electrodes (551B, 551G).

[0489] In the light-emitting devices 550B, 550G, and 550R, the width of the EL layer (103B, 103G, 103R) may be greater than the width of the electrodes (551B, 551G, 551R). Also, in the light-receiving device 550PS, the width of the light-receiving layer 103PS may be greater than the width of the electrode 551PS. Figure 8(E) shows an example in the light-emitting device 550R where the width of the EL layer 103R is greater than the width of the electrode 551R.

[0490] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0491] (Embodiment 4) In this embodiment, the device 720 will be described with reference to Figures 9 to 11. The device 720 shown in Figures 9 to 11 is a light-emitting device because it has the light-emitting device shown in Embodiments 1 and 2. However, the device 720 described in this embodiment can also be called a display panel or display device because it is applicable to the display section of electronic equipment and the like. Furthermore, if the device is configured to use the light-emitting device as a light source and to include a light-receiving device that can receive light from the light-emitting device, it can also be called a light-receiving and receiving device. These light-emitting devices, display panels, display devices, and light-receiving and receiving devices all have at least one light-emitting device.

[0492] Furthermore, the light-emitting device, display panel, display device, and light-receiving device of this embodiment can be high-resolution or large-screen. Therefore, the light-emitting device, display panel, display device, and light-receiving device of this embodiment can be used in electronic devices with relatively large screens, such as television systems, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal information terminals, and audio playback devices.

[0493] Figure 9(A) shows a top view of these devices (including light-emitting devices, display panels, display devices, and light-receiving devices) 720.

[0494] In Figure 9(A), the device 720 has a configuration in which substrates 710 and 711 are bonded together. The device 720 also has a display area 701, a circuit 704, and wiring 706, etc. The display area 701 has multiple pixels, and as shown in Figure 9(A), pixel 703(i,j) has an adjacent pixel 703(i+1,j) as shown in Figure 9(B).

[0495] Furthermore, as shown in Figure 9(A), the device 720 shows an example in which an IC (integrated circuit) 712 is provided on the substrate 710 using a COG (Chip On Glass) method or a COF (Chip On Film) method. For example, an IC having a scan line drive circuit or a signal line drive circuit can be used as IC 712. Figure 9(A) shows a configuration in which an IC having a signal line drive circuit is used as IC 712, and circuit 704 has a scan line drive circuit.

[0496] The wiring 706 has the function of supplying signals and power to the display area 701 and the circuit 704. These signals and power are input to the wiring 706 from an external source via the FPC (Flexible Printed Circuit) 713, or from the IC 712. The device 720 may be configured without an IC. Alternatively, the IC may be mounted on the FPC using a COF (Cable Oven) method or the like.

[0497] Figure 9(B) shows pixels 703(i,j) and 703(i+1,j) of the display area 701. That is, pixel 703(i,j) can be configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others. Alternatively, it can be configured to include multiple subpixels, each having a light-emitting device that emits the same color. When a pixel is configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others, for example, the pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, the pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y. Specifically, it can be a pixel 703(i,j) composed of sub-pixels 702B(i,j) that display blue, sub-pixels 702G(i,j) that display green, and sub-pixels 702R(i,j) that display red.

[0498] Furthermore, the device 720 includes not only subpixels having light-emitting devices, but also subpixels having light-receiving devices.

[0499] The pixels 703(i,j) shown in Figures 9(C) to 9(E) illustrate various layout examples, including a sub-pixel 702PS(i,j) having a light-receiving device. The pixel arrangement shown in Figure 9(C) is a stripe arrangement, and the pixel arrangement shown in Figure 9(D) is a matrix arrangement. The pixel arrangement shown in Figure 9(E) has a configuration in which three sub-pixels (sub-pixel R, sub-pixel G, and sub-pixel PS) are arranged vertically next to one sub-pixel (sub-pixel B).

[0500] Furthermore, as shown in Figure 9(F), a sub-pixel 702IR(i,j) that emits infrared light may be added to the above set and designated as pixel 703(i,j). The pixel arrangement shown in Figure 9(F) has a configuration in which vertically elongated sub-pixels G, B, and R are arranged horizontally, with a sub-pixel PS and a horizontally elongated sub-pixel IR arranged horizontally below them. Specifically, a sub-pixel 702IR(i,j) that emits light including light with wavelengths between 650 nm and 1000 nm may be used as pixel 703(i,j). The wavelength of light detected by sub-pixel 702PS(i,j) is not particularly limited, but it is preferable that the light-receiving device of sub-pixel 702PS(i,j) is sensitive to the light emitted by the light-emitting device of sub-pixel 702R(i,j), sub-pixel 702G(i,j), sub-pixel 702B(i,j), or sub-pixel 702IR(i,j). For example, it is preferable to detect one or more of the following wavelengths: blue, violet, blue-violet, green, yellow-green, yellow, orange, red, and infrared.

[0501] Furthermore, the arrangement of subpixels is not limited to the configurations shown in Figures 9(B) to 9(F), and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0502] Furthermore, the top surface shape of a sub-pixel can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, or other polygons with rounded corners, an ellipse, or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0503] Furthermore, if the pixel is configured to have both a light-emitting device and a light-receiving device, the pixel has a light-receiving function, allowing it to detect contact or proximity of an object while displaying an image. For example, instead of displaying an image with all of the subpixels of the light-emitting device, some of the subpixels can emit light as a light source, while the remaining subpixels display an image.

[0504] Furthermore, it is preferable that the light-receiving area of ​​the sub-pixel 702PS(i,j) is smaller than the light-emitting area of ​​the other sub-pixels. The smaller the light-receiving area, the narrower the imaging range, which allows for suppression of blur in the imaging result and improvement of resolution. Therefore, by using the sub-pixel 702PS(i,j), high-definition or high-resolution imaging can be performed. For example, the sub-pixel 702PS(i,j) can be used to perform imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces.

[0505] Furthermore, the sub-pixel 702PS(i,j) can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor). For example, it is preferable that the sub-pixel 702PS(i,j) detect infrared light. This enables touch detection even in dark places.

[0506] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the light-receiving device and the object are in direct contact. A near-touch sensor can detect an object even if the object does not come into contact with the light-receiving device. For example, it is preferable that the light-receiving device can detect an object when the distance between the light-receiving device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the light-receiving device without the object directly touching it, in other words, it becomes possible to operate the light-receiving device without contact (touchless). With the above configuration, the risk of the light-receiving device becoming dirty or scratched can be reduced, or it becomes possible to operate the light-receiving device without the object directly touching any dirt (e.g., dust, bacteria, or viruses) attached to the light-receiving device.

[0507] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels 702PS(i,j) be provided on all pixels of the light-receiving device. On the other hand, when sub-pixels 702PS(i,j) are used in touch sensors or near-touch sensors, the accuracy required is not as high as when imaging fingerprints, so it is sufficient to provide them on some of the pixels of the light-receiving device. The detection speed can be increased by reducing the number of sub-pixels 702PS(i,j) in the light-receiving device to the number of sub-pixels 702R(i,j), etc.

[0508] Next, an example of a pixel circuit for a subpixel having a light-emitting device will be explained with reference to Figure 10(A). The pixel circuit 530 shown in Figure 10(A) has a light-emitting device (EL) 550, transistors M15, M16, M17, and a capacitive element C3. A light-emitting diode can be used as the light-emitting device 550. In particular, it is preferable to use the light-emitting device described in Embodiment 1 and Embodiment 2 as the light-emitting device 550.

[0509] In Figure 10(A), transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device 550 and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device 550 is electrically connected to wiring V5.

[0510] Constant potentials are supplied to wiring V4 and wiring V5, respectively. The anode side of the light-emitting device 550 can be set to a high potential, and the cathode side to a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit 530. Transistor M16 also functions as a drive transistor that controls the current flowing to the light-emitting device 550 according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device 550 can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device 550 to the outside via wiring OUT2.

[0511] Furthermore, it is preferable to use transistors in which the semiconductor layer on which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M15, M16, and M17 in the pixel circuit 530 of Figure 10(A), and transistors M11, M12, M13, and M14 in the pixel circuit 531 of Figure 10(B).

[0512] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0513] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0514] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0515] Next, an example of a pixel circuit for a subpixel having a light-receiving device will be explained with reference to Figure 10(B). The pixel circuit 531 shown in Figure 10(B) has a light-receiving device (PD) 560, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example using a photodiode as the light-receiving device (PD) 560 is shown.

[0516] In Figure 10(B), the photodetector (PD) 560 has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Transistor M11 has its gate electrically connected to wiring TX and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES and its other source or drain electrically connected to wiring V2. Transistor M13 has its source or drain electrically connected to wiring V3 and its other source or drain electrically connected to either the source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE1 and its other source or drain electrically connected to wiring OUT1.

[0517] Constant potentials are supplied to wirings V1, V2, and V3, respectively. When the photodetector (PD) 560 is driven in reverse bias, a higher potential is supplied to wiring V2 than to wiring V1. Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector (PD) 560. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE1 and functions as a selection transistor for reading the output according to the potential of the above node with an external circuit connected to wiring OUT1.

[0518] Note that in Figures 10(A) and 10(B), the transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0519] It is preferable that the transistors in pixel circuit 530 and the transistors in pixel circuit 531 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit 530 and the transistors in pixel circuit 531 to be mixed within a single region and arranged periodically.

[0520] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device (PD) 560 or the light-emitting device (EL) 550. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0521] Next, Figure 10(C) shows an example of a specific transistor structure that can be applied to the pixel circuit described in Figures 10(A) and 10(B). Note that bottom-gate transistors or top-gate transistors can be used as appropriate.

[0522] The transistor shown in Figure 10(C) has a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed, for example, on an insulating film 501C. The transistor also has an insulating film 516 (insulating film 516A and insulating film 516B) and an insulating film 518.

[0523] The semiconductor film 508 has a region 508A that is electrically connected to the conductive film 512A, and a region 508B that is electrically connected to the conductive film 512B. The semiconductor film 508 has a region 508C between regions 508A and 508B.

[0524] The conductive film 504 has a region that overlaps with region 508C, and the conductive film 504 has the function of a gate electrode.

[0525] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a first gate insulating film.

[0526] The conductive film 512A has either the function of a source electrode or the function of a drain electrode, and the conductive film 512B has either the function of a source electrode or the function of a drain electrode.

[0527] Furthermore, the conductive film 524 can be used in a transistor. The conductive film 524 has a region in which the semiconductor film 508 is sandwiched between it and the conductive film 504. The conductive film 524 functions as a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.

[0528] The insulating film 516 functions, for example, as a protective film covering the semiconductor film 508. Specifically, the insulating film 516 can include films containing silicon oxide, silicon oxide nitride, silicon nitride, silicon nitride, aluminum oxide, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, or neodymium oxide.

[0529] The insulating film 518 is preferably made of a material that has the function of suppressing the diffusion of, for example, oxygen, hydrogen, water, alkali metals, alkaline earth metals, etc. Specifically, as the insulating film 518, for example, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, etc. are available. Furthermore, it is preferable that the number of nitrogen atoms is greater than the number of oxygen atoms in silicon oxynitride and aluminum oxynitride, respectively.

[0530] Furthermore, in the process of forming the semiconductor film used for the transistors in the pixel circuit, the semiconductor film used for the transistors in the drive circuit can also be formed. For example, a semiconductor film with the same composition as the semiconductor film used for the transistors in the pixel circuit can be used in the drive circuit.

[0531] Furthermore, the semiconductor film 508 preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin.

[0532] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor film 508. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0533] When the semiconductor film is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0534] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0535] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0536] Furthermore, it is preferable that the semiconductor layer of the transistor has a metal oxide (also called an oxide semiconductor). Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0537] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon (single-crystal Si), polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0538] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits mounted on the light-emitting device, reducing component and mounting costs.

[0539] Transistors having a metal oxide (hereinafter also called an oxide semiconductor) as the semiconductor in which the channel is formed (hereinafter also called an OS transistor) have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors have a remarkably small source-drain leakage current (hereinafter also called an off-current) in the off state, making it possible to retain the charge stored in a capacitor connected in series with the transistor for a long period of time. In addition, by applying an OS transistor, the power consumption of a light-emitting device can be reduced.

[0540] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0541] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0542] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0543] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be supplied to a light-emitting device, for example, even if there are variations in the current-voltage characteristics of the light-emitting device. In other words, when operating in the saturation region, the source-drain current of an OS transistor remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0544] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0545] Alternatively, the semiconductor film used for the transistors in the drive circuit can be formed using the same process as the semiconductor film used for the transistors in the pixel circuit. Alternatively, the drive circuit can be formed on the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting the electronic device can be reduced.

[0546] Furthermore, silicon may be used for the semiconductor film 508. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field-effect mobility and good frequency characteristics.

[0547] By using silicon-based transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same circuit board as the display unit. This simplifies the external circuits implemented in the light-emitting device, reducing component and mounting costs.

[0548] Furthermore, it is preferable to use an OS transistor for at least one of the transistors included in the pixel circuit. OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. In addition, OS transistors have a remarkably small source-drain leakage current (hereinafter also referred to as off-current) in the off state, making it possible to retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Moreover, by applying an OS transistor, the power consumption of the light-emitting device can be reduced.

[0549] By using LTPS transistors in some of the transistors included in the pixel circuit and OS transistors in others, it is possible to realize a light-emitting device with low power consumption and high driving capability. A more preferable example is to apply OS transistors to transistors that function as switches to control conduction and non-conduction between wiring, and LTPS transistors to transistors that control current. A configuration that combines both LTPS transistors and OS transistors is sometimes referred to as LTPO. By using LTPO, it is possible to realize a display panel with low power consumption and high driving capability.

[0550] For example, one of the transistors provided in the pixel circuit functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0551] On the other hand, another transistor provided in the pixel circuit functions as a switch to control the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0552] When an oxide semiconductor is used as the semiconductor film, the device 720 has a configuration in which an oxide semiconductor is used as the semiconductor film and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to make the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current) extremely low. Furthermore, with the above configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by making the leakage current that can flow through the transistor and the lateral leakage current between light-emitting devices extremely low, it is possible to achieve a display (also called true black display) with as little light leakage (so-called black floating) that may occur when displaying black as possible.

[0553] In particular, even among light-emitting devices with an MML structure, applying the SBS structure described above results in a configuration in which the layers provided between light-emitting devices (for example, an organic layer used in common between light-emitting devices, also called a common layer) are separated, making it possible to achieve a display with no side leakage or extremely low side leakage.

[0554] Furthermore, the transistor configuration used in the display panel can be appropriately selected according to the screen size of the display panel. For example, when single-crystal Si transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal size of 0.1 inches to 3 inches. When LTPS transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal size of 0.1 inches to 30 inches, preferably 1 inch to 30 inches. When LTPO (a configuration combining LTPS transistors and OS transistors) is used in the display panel, it can be applied to screen sizes with a diagonal size of 0.1 inches to 50 inches, preferably 1 inch to 50 inches. When OS transistors are used as the transistors in the display panel, it can be applied to screen sizes with a diagonal size of 0.1 inches to 200 inches, preferably 50 inches to 100 inches.

[0555] Furthermore, single-crystal Si transistors are extremely difficult to enlarge due to the size limitations of the single-crystal Si substrate. Similarly, LTPS transistors require laser crystallization during the manufacturing process, making it difficult to accommodate larger screen sizes (typically exceeding 30 inches diagonally). On the other hand, OS transistors are not subject to the constraints of laser crystallization during the manufacturing process, or can be manufactured at relatively low process temperatures (typically below 450°C), allowing them to accommodate relatively large display panels (typically between 50 and 100 inches diagonally). LTPO transistors can be applied to sizes between those using LTPS and OS transistors (typically between 1 and 50 inches diagonally).

[0556] Next, a cross-sectional view of the light-receiving device is shown. Figure 11 shows a cross-sectional view of the light-receiving device shown in Figure 9(A).

[0557] The cross-sectional view in Figure 11 shows the cross-sectional view when a portion of the area including the FPC 713 and wiring 706, and a portion of the display area 701 including pixel 703(i,j) are cut away.

[0558] In Figure 11, the light-receiving device 700 has a functional layer 520 between the first substrate 510 and the second substrate 770. The functional layer 520 includes transistors (M11, M12, M13, M14, M15, M16, M17) and capacitive elements (C2, C3) as described in Figure 10, as well as wiring (VS, VG, V1, V2, V3, V4, V5) that electrically connect them. In Figure 11, the functional layer 520 is shown to include a pixel circuit 530X(i,j) and a pixel circuit 530S(i,j), as well as a drive circuit GD, but is not limited to this configuration.

[0559] Furthermore, the pixel circuits formed on the functional layer 520 (for example, the pixel circuits 530X(i,j) and 530S(i,j) shown in Figure 11) are electrically connected to the light-emitting device and light-receiving device formed on the functional layer 520 (for example, the light-emitting device 550X(i,j) and light-receiving device 550S(i,j) shown in Figure 11). Specifically, the light-emitting device 550X(i,j) is electrically connected to the pixel circuit 530X(i,j) via wiring 591X, and the light-receiving device 550S(i,j) is electrically connected to the pixel circuit 530S(i,j) via wiring 591S. In addition, there is an insulating layer 705 on the functional layer 520, the light-emitting device, and the light-receiving device, and the insulating layer 705 has the function of bonding the functional layer 520 to the second substrate 770.

[0560] Furthermore, the second substrate 770 can be a substrate equipped with touch sensors in a matrix. For example, a substrate equipped with a capacitive touch sensor or an optical touch sensor can be used as the second substrate 770. This allows the light-receiving device according to one aspect of the present invention to be used as a touch panel.

[0561] The configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0562] (Embodiment 5) In this embodiment, the configuration of an electronic device according to one aspect of the present invention will be explained with reference to Figures 12(A) to 14(B).

[0563] Figures 12(A) to 14(B) illustrate the configuration of an electronic device according to one embodiment of the present invention. Figure 12(A) is a block diagram of the electronic device, and Figures 12(B) to 12(E) are perspective views illustrating the configuration of the electronic device. Figures 13(A) to 13(E) are perspective views illustrating the configuration of the electronic device, and Figures 14(A) and 14(B) are perspective views illustrating the configuration of the electronic device.

[0564] The electronic device 5200B described in this embodiment includes a computing device 5210 and an input / output device 5220 (see Figure 12(A)).

[0565] The arithmetic unit 5210 has a function to receive operation information and a function to supply image information based on the operation information.

[0566] The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function for supplying operation information, and a function for supplying image information. Furthermore, the input / output device 5220 also includes a function for supplying detection information, a function for supplying communication information, and a function for receiving communication information.

[0567] The input unit 5240 has the function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the electronic device 5200B.

[0568] Specifically, the input unit 5240 can use a keyboard, hardware buttons, pointing device, touch sensor, illuminance sensor, imaging device, voice input device, eye-tracking device, posture detection device, etc.

[0569] The display unit 5230 has the function of displaying a display panel and image information. For example, the display panel described in Embodiment 3 can be used in the display unit 5230.

[0570] The detection unit 5250 has the function of supplying detection information. For example, it has the function of detecting the surrounding environment in which electronic equipment is being used and supplying it as detection information.

[0571] Specifically, illuminance sensors, imaging devices, posture detection devices, pressure sensors, and human presence sensors can be used in the detection unit 5250.

[0572] The communication unit 5290 has functions for receiving and supplying communication information. For example, it has functions for connecting with other electronic devices or communication networks via wireless or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0573] Figure 12(B) shows an electronic device having an external shape that follows a cylindrical column or the like. One example is digital signage. A display panel, which is one aspect of the present invention, can be applied to the display unit 5230. It may also have a function to change the display method according to the illumination of the usage environment. It may also have a function to change the display content when a person is detected. This allows it to be installed, for example, on a building column, or to display advertisements or information.

[0574] Figure 12(C) shows an electronic device that has the function of generating image information based on the trajectory of a pointer used by the user. Examples include electronic whiteboards, electronic bulletin boards, and electronic signboards. Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to form a single display area. Alternatively, multiple display panels can be arranged to form a multi-screen.

[0575] Figure 12(D) shows an electronic device that can receive information from other devices and display it on the display unit 5230. One example is a wearable electronic device. Specifically, it can display several options, or the user can select several options and send them back to the information sender. Alternatively, it can have a function to change the display method according to the illumination of the usage environment. This can reduce the power consumption of the wearable electronic device, for example. Alternatively, it can display images on the wearable electronic device so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0576] Figure 12(E) shows an electronic device having a display unit 5230 with a curved surface that gently curves along the side of the housing. One example is a mobile phone. The display unit 5230 includes a display panel, which has the function of displaying on, for example, the front, side, top, and back. This allows information to be displayed not only on the front of the mobile phone, but also on the sides, top, and back.

[0577] Figure 13(A) shows an electronic device that can receive information from the internet and display it on the display unit 5230. One example is a smartphone. For example, a message that has been created can be viewed on the display unit 5230. Alternatively, a message that has been created can be sent to another device. Alternatively, for example, it has a function to change the display method according to the illumination of the usage environment. This can reduce the power consumption of the smartphone. Alternatively, for example, an image can be displayed on the smartphone so that it can be used suitably even in environments with strong ambient light, such as outdoors on a sunny day.

[0578] Figure 13(B) shows an electronic device that can use a remote controller as an input unit 5240. One example is a television system. Alternatively, it can receive information from a broadcasting station or the internet and display it on the display unit 5230. Alternatively, it can photograph the user using the detection unit 5250. Alternatively, it can transmit the user's video. Alternatively, it can acquire the user's viewing history and provide it to a cloud service. Alternatively, it can acquire recommendation information from a cloud service and display it on the display unit 5230. Alternatively, it can display a program or video based on the recommendation information. Alternatively, it can have a function to change the display method according to the illumination of the usage environment. This allows the video to be displayed on the television system in a way that is suitable for use even when strong sunlight shines into the room on a sunny day.

[0579] Figure 13(C) shows an electronic device that can receive educational materials from the internet and display them on the display unit 5230. One example is a tablet computer. Alternatively, a report can be entered using the input unit 5240 and sent to the internet. Alternatively, the correction results or evaluations of the report can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, appropriate educational materials can be selected and displayed based on the evaluation.

[0580] For example, the display unit 5230 can receive image signals from other electronic devices and display them. Alternatively, it can be propped up on a stand or the like and used as a sub-display. This allows images to be displayed on the tablet computer in a way that is suitable for use even in environments with strong ambient light, such as outdoors on a sunny day.

[0581] Figure 13(D) shows an electronic device having multiple display units 5230. One example is a digital camera. For example, the display unit 5230 can display an image while the detection unit 5250 is capturing it. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, it can be transmitted to the internet. Alternatively, it has a function to change the shooting conditions according to the illumination of the usage environment. This makes it possible to display the subject on the digital camera so that it can be viewed favorably even in environments with strong ambient light, such as outdoors on a sunny day.

[0582] Figure 13(E) shows an electronic device that can control other electronic devices by using the electronic device of this embodiment as a master and using other electronic devices as slaves. One example is a portable personal computer. For example, part of the image information can be displayed on the display unit 5230 and the other part of the image information can be displayed on the display unit of the other electronic device. Alternatively, an image signal can be supplied. Alternatively, information to be written can be obtained from the input unit of the other electronic device using the communication unit 5290. This allows, for example, a portable personal computer to utilize a wide display area.

[0583] Figure 14(A) shows an electronic device having a detection unit 5250 that detects acceleration or direction. One example is a goggle-type electronic device. Alternatively, the detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information for the right eye and image information for the left eye based on the user's position or the direction the user is facing. Alternatively, the display unit 5230 has a display area for the right eye and a display area for the left eye. This allows, for example, the display of an immersive virtual reality space on a goggle-type electronic device.

[0584] Figure 14(B) shows an electronic device having an imaging device and a detection unit 5250 that detects acceleration or direction. One example is a glasses-type electronic device. Alternatively, the detection unit 5250 can supply information relating to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information based on the user's position or the direction the user is facing. This allows, for example, information to be attached to and displayed on a real-world landscape. Alternatively, images of an augmented reality space can be displayed on a glasses-type electronic device.

[0585] This embodiment can be appropriately combined with other embodiments shown in this specification.

[0586] (Embodiment 6) In this embodiment, a configuration in which the light-emitting devices described in Embodiment 1 and Embodiment 2 are used as an illumination device will be explained with reference to Figure 15. Figure 15(A) is a cross-sectional view of the line segment ef in the top view of the illumination device shown in Figure 15(B).

[0587] In this embodiment, the lighting device has a first electrode 401 formed on a translucent substrate 400 which serves as a support. The first electrode 401 corresponds to the first electrode 101 in Embodiments 1 and 2. When light is extracted from the first electrode 401 side, the first electrode 401 is formed from a translucent material.

[0588] A pad 412 for supplying voltage to the second electrode 404 is formed on the substrate 400.

[0589] An EL layer 403 is formed on the first electrode 401. The EL layer 403 corresponds to the configuration of the EL layer 103 in Embodiment 1 and Embodiment 2. Please refer to the respective descriptions for details on these configurations.

[0590] A second electrode 404 is formed by covering the EL layer 403. The second electrode 404 corresponds to the second electrode 102 in Embodiment 1 and Embodiment 2. When light emission is extracted from the first electrode 401 side, the second electrode 404 is formed of a material with high reflectivity. Voltage is supplied to the second electrode 404 by connecting it to the pad 412.

[0591] As described above, the lighting device shown in this embodiment has a light-emitting device having a first electrode 401, an EL layer 403, and a second electrode 404. Since this light-emitting device is a light-emitting device with high luminous efficiency, the lighting device in this embodiment can be a lighting device with low power consumption.

[0592] The lighting device is completed by fixing and sealing the substrate 400, on which the light-emitting device having the above configuration is formed, and the sealing substrate 407 using sealing materials (405, 406). Either sealing material 405 or 406 may be used. In addition, a desiccant can be mixed into the inner sealing material 406 (not shown in Figure 15(B)), which allows for the adsorption of moisture and leads to improved reliability.

[0593] Furthermore, by extending the pad 412 and a portion of the first electrode 401 outside the sealing materials 405 and 406, it can be used as an external input terminal. Alternatively, an IC chip 420 with a converter or the like may be placed on top of it.

[0594] (Embodiment 7) In this embodiment, an example of an application of a lighting device manufactured by applying a light-emitting device, or a light-emitting device which is a part thereof, which is one aspect of the present invention, will be explained with reference to Figure 16.

[0595] For indoor lighting, it can be used as a ceiling light 8001. The ceiling light 8001 is available in both surface-mounted and recessed ceiling types. Such lighting devices are constructed by combining a light-emitting device with a housing and cover. It can also be used as a cord pendant type (suspended from the ceiling by a cord).

[0596] Furthermore, the 8002 footlight illuminates the floor surface, enhancing safety underfoot. For example, it is effective for use in bedrooms, stairwells, and corridors. In such cases, the size and shape can be appropriately changed according to the size and structure of the room. It can also be configured as a freestanding lighting device consisting of a light-emitting device and a support base.

[0597] Furthermore, the sheet-type lighting 8003 is a thin, sheet-shaped lighting device. Because it is attached to a wall surface, it does not take up much space and can be used in a wide range of applications. It can also be easily made to cover a large area. It can also be used on curved walls, enclosures, etc.

[0598] Alternatively, a lighting device 8004 can be used in which the light from the light source is controlled to flow only in a desired direction.

[0599] Furthermore, the desk lamp 8005 has a light source 8006, and as the light source 8006, a light-emitting device that is a part of the present invention or a light-emitting device that is a part thereof can be applied.

[0600] In addition to the above, by applying a light-emitting device, or a light-emitting device that is a part thereof, according to one aspect of the present invention, to a part of the furniture installed in the room, it is possible to create a lighting device that also functions as furniture.

[0601] As described above, various lighting devices can be obtained by applying a light-emitting device. These lighting devices are included in one aspect of the present invention.

[0602] Furthermore, the configuration shown in this embodiment can be used in appropriate combination with the configurations shown in other embodiments.

[0603] (Embodiment 8) In this embodiment, a light-emitting device and a light-receiving device applicable to a light-emitting device which is one aspect of the present invention will be described, and a light-receiving device 810 will be described with reference to Figure 17. The light-receiving device 810 can also be called a light-emitting device because it has a light-emitting device, a light-receiving device because it has a light-receiving device, and a display panel or display device because it can be applied to the display section of electronic equipment, etc.

[0604] Figure 17(A) shows a schematic cross-sectional view of the light-emitting device 805a and the light-receiving device 805b of a light-receiving device 810 according to one aspect of the present invention.

[0605] The light-emitting device 805a has a function of emitting light (hereinafter also referred to as the light-emitting function). The light-emitting device 805a has an electrode 801a, an EL layer 803a, and an electrode 802. Preferably, the light-emitting device 805a is a light-emitting device (organic EL device) that utilizes organic EL as shown in Embodiment 1 and Embodiment 2. Therefore, the EL layer 803a sandwiched between the electrode 801a and the electrode 802 has at least a light-emitting layer. The light-emitting layer has a light-emitting material. By applying a voltage between the electrode 801a and the electrode 802, light is emitted from the EL layer 803a. In addition to the light-emitting layer, the EL layer 803a may have various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier (hole or electron) blocking layer, and a charge generation layer. The first organic compound described in Embodiment 1 can be used in any of the layers of the EL layer 803a.

[0606] The light-receiving device 805b has a function to detect light (hereinafter also referred to as the light-receiving function). For example, the light-receiving device 805b can be a pn-type or pin-type photodiode. The light-receiving device 805b has an electrode 801b, a light-receiving layer 803b, and an electrode 802. The light-receiving layer 803b, which is sandwiched between electrodes 801b and 802, has at least an active layer. The light-receiving layer 803b can also be made of the same materials used for various layers of the EL layer 803a described above (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, carrier (hole or electron) blocking layer, charge generation layer, etc.). In addition, the first organic compound described in Embodiment 1 can be used in any of the layers of the light-receiving layer 803b. The light-receiving device 805b functions as a photoelectric conversion device and can generate charge from light incident on the light-receiving layer 803b and extract it as an electric current. At this time, a voltage may be applied between electrode 801b and electrode 802. The amount of charge generated is determined based on the amount of light incident on the light-receiving layer 803b.

[0607] The light-receiving device 805b has the function of detecting visible light. The light-receiving device 805b is sensitive to visible light. It is even more preferable that the light-receiving device 805b has the function of detecting both visible light and infrared light. It is preferable that the light-receiving device 805b is sensitive to both visible light and infrared light.

[0608] In this specification, the wavelength range for blue (B) is defined as 400 nm to less than 490 nm, and blue (B) light is defined as having at least one emission spectral peak in this wavelength range. The wavelength range for green (G) is defined as 490 nm to less than 580 nm, and green (G) light is defined as having at least one emission spectral peak in this wavelength range. The wavelength range for red (R) is defined as 580 nm to less than 700 nm, and red (R) light is defined as having at least one emission spectral peak in this wavelength range. In this specification, the wavelength range for visible light is defined as 400 nm to less than 700 nm, and visible light is defined as having at least one emission spectral peak in this wavelength range. The wavelength range for infrared (IR) is defined as 700 nm to less than 900 nm, and infrared (IR) light is defined as having at least one emission spectral peak in this wavelength range.

[0609] The active layer of the light-receiving device 805b includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silico...

Claims

1. At least a light-emitting layer is provided between an anode and a cathode, the light-emitting layer contains at least a light-emitting material, the luminescent material is a material that exhibits fluorescent light, A light-emitting device having a first organic compound represented by general formula (G1) between the anode and the cathode. 【Chemical 1】 (However, in the general formula (G1), Ar １ represents a substituted or unsubstituted fluorenyl group, Ar ２ represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; A １ represents a substituted or unsubstituted dibenzofuranyl group or a substituted or unsubstituted dibenzothiophenyl group. １ , Ar ２ and A １ When one or more of the above groups have one or more substituents, the substituents are each independently an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 13 carbon atoms. Note that the aryl group does not include a heteroaryl group. In addition, the substituents may be bonded to each other to form a ring.

2. At least a light-emitting layer is provided between an anode and a cathode, the light-emitting layer contains at least a light-emitting material, the luminescent material is a material that exhibits fluorescent light, A light-emitting device having a first organic compound represented by general formula (G2) between the anode and the cathode. 【Chemistry 2】 (However, in the general formula (G2), Ar ３ represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; A ２ represents a substituted or unsubstituted dibenzofuranyl group or a substituted or unsubstituted dibenzothiophenyl group, R １ ~R ９ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms; Ar ３ and A ２ When one or both of the groups have one or more substituents, the substituents are each independently an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 13 carbon atoms. Note that the aryl group does not include a heteroaryl group. In addition, the substituents may be bonded to each other to form a ring.

3. At least a light-emitting layer is provided between an anode and a cathode, the light-emitting layer contains at least a light-emitting material, the luminescent material is a material that exhibits fluorescent light, A light-emitting device having a first organic compound represented by general formula (G3) between the anode and the cathode. 【Chemistry 3】 (However, in general formula (G3), １ represents oxygen or sulfur, R ２１ and R ２２ and R ３１ ~R ３７ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms; R ３８ ~R ４６ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms; R ４７ ~R ５３ Each of R independently represents hydrogen (including deuterium), an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 13 carbon atoms. The aryl group does not include a heteroaryl group. ２１ and R ２２ and R ３１ ~R ３７ At least two of the groups represented by R may be bonded to each other to form a ring. ３８ ~R ４６ At least two of the groups represented by R may be bonded to each other to form a ring. ４７ ~R ５３ At least two of the groups represented by the formula (I) may be bonded to each other to form a ring.

4. In any one of claims 1 to 3, The light-emitting layer comprises the first organic compound.

5. In any one of claims 1 to 3, a first layer between the light-emitting layer and the anode; The first layer comprises the first organic compound.

6. In claim 5, The first layer is in contact with the light-emitting layer.

7. In claim 5, The first layer contacts the anode.

8. In any one of claims 1 to 3, The first organic compound is a light-emitting device represented by any one of structural formulas (100), (101), (105), (136), (200), and (400). 【Chemistry 4】

9. In any one of claims 1 to 3, A light-emitting device, wherein the difference between the lowest singlet excitation level and the lowest triplet excitation level of the light-emitting substance is 0.3 eV or more.

10. In any one of claims 1 to 3, A light-emitting device, wherein the light-emitting material is a material that emits blue light.

11. A light emitting apparatus comprising the light emitting device according to claim 1 and at least one of a transistor and a substrate.

12. A light-emitting device according to any one of claims 1 to 3 and a light-receiving device, the light-receiving device has a light-receiving layer between a first electrode and a second electrode; The light-emitting device, wherein the light-receiving layer includes the first organic compound.

13. A light-emitting device according to any one of claims 1 to 3 and a light-receiving device, the light-receiving device has a light-receiving layer between a first electrode and a second electrode; the absorption layer has at least an active layer, The active layer comprises the first organic compound.

14. A light-emitting device according to any one of claims 1 to 3 and a light-receiving device, the light-receiving device has a light-receiving layer between a first electrode and a second electrode; the light-receiving layer has at least an active layer and a second layer between the active layer and the first electrode; The second layer comprises the first organic compound.

15. A light-emitting device according to claim 5 and a light-receiving device, the light-receiving device has a light-receiving layer between a first electrode and a second electrode; The light-emitting device, wherein the light-receiving layer has at least an active layer and the first layer between the active layer and the first electrode.

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