Semiconductor device, light-emitting device, display device, photoelectric conversion device, electronic device, lighting device, and mobile body

Abstract

To provide a technique that is advantageous in achieving highly accurate alignment for downsizing and reliability improvement of a semiconductor device.SOLUTION: A semiconductor device includes an element substrate having a main surface provided with a pixel area in which a plurality of pixels is arranged and a peripheral area in which an alignment mark and a plurality of terminals are arranged. The semiconductor device includes a transparent insulating layer that covers the alignment mark and does not cover the plurality of terminals and portions between each of the plurality of terminals.SELECTED DRAWING: Figure 1

Description

Technical Field

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[0001] The present invention relates to a semiconductor device, a light-emitting device, a display device, a photoelectric conversion device, an electronic device, a lighting device, and a moving body.

Background Art

[0002] In a semiconductor device including an element substrate provided with a plurality of pixels and terminals for external connection, as the semiconductor device is miniaturized, the pitch of the terminals for external connection provided on the element substrate becomes smaller. In order to bond the terminals for external connection arranged at a small pitch to terminals provided on a bonded body such as a wiring substrate, it is necessary to increase the alignment accuracy between the element substrate and the bonded body. Patent Document 1 shows that a semiconductor chip having a sealing resin layer covering a protruding electrode and an alignment mark is bonded to a bonded body with high precision.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present invention is to provide a technique advantageous for realizing more accurate alignment for miniaturization and reliability improvement of a semiconductor device.

Means for Solving the Problems

[0005] In view of the above problems, a semiconductor device according to an embodiment of the present invention includes an element substrate having a main surface provided with a pixel region in which a plurality of pixels are arranged and a peripheral region in which alignment marks and a plurality of terminals are arranged, and includes a transparent insulating layer that covers the alignment marks and does not cover between the plurality of terminals and between each of the plurality of terminals. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a technology that is advantageous for achieving high-precision alignment in order to miniaturize semiconductor devices and improve their reliability. [Brief explanation of the drawing]

[0007] [Figure 1] A diagram showing an example configuration of a semiconductor device according to this embodiment. [Figure 2] Figure 1 shows a diagram illustrating the manufacturing method of the semiconductor device. [Figure 3] This figure shows a modified example of the semiconductor device shown in Figure 1. [Figure 4] This figure shows a modified example of the semiconductor device shown in Figure 3. [Figure 5] A figure showing an example of a display device using the semiconductor device of this embodiment. [Figure 6] A diagram showing an example of a photoelectric conversion device using the semiconductor device of this embodiment. [Figure 7] A diagram showing an example of an electronic device using the semiconductor device of this embodiment. [Figure 8] A figure showing an example of a display device using the semiconductor device of this embodiment. [Figure 9] A diagram showing an example of a lighting device using the semiconductor device of this embodiment. [Figure 10] A diagram showing an example of a mobile device using the semiconductor device of this embodiment. [Figure 11] A figure showing an example of a wearable device using the semiconductor device of this embodiment. [Modes for carrying out the invention]

[0008] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0009] A semiconductor device according to an embodiment of the present disclosure will be described with reference to Figures 1(a), 1(b) to 11(a), 11(b). Figure 1(a) is a plan view and a cross-sectional view between A and A' shown in the plan view, showing an example configuration of the semiconductor device 800 in this embodiment. Figure 1(b) is a cross-sectional view between Y and Y' shown in the plan view of Figure 1(a). The semiconductor device 800 includes an element substrate 100 having a main surface MS on which a pixel region AA on which a plurality of pixels 70 are arranged and a peripheral region PA on which alignment marks 50 and a plurality of terminals 40 are arranged.

[0010] In the configuration shown in Figure 1(a), the pixel region AA is rectangular. The diagonal length of the pixel region AA may be, for example, 5 to 50 mm. Circuits for operating the pixels arranged in the pixel region AA may be arranged in the peripheral region PA. For example, if each of the multiple pixels 70 includes a light-emitting element and the semiconductor device 800 functions as a light-emitting device, the peripheral region PA may include a drive circuit for driving the pixels 70 and processing circuits such as a DAC (digital-to-analog converter) for processing the luminance signals input to the pixels 70. Also, for example, if each of the multiple pixels 70 includes a photoelectric converter and the semiconductor device 800 functions as a photoelectric converter, the peripheral region PA may include a drive circuit for driving the pixels 70 and processing circuits such as a DAC (digital-to-analog converter) for processing the signals output from the pixels 70.

[0011] The following explanation uses an example in which each of the pixels 70 includes a light-emitting element such as an organic EL (electroluminescent) element, and the semiconductor device 800 functions as a light-emitting device. However, it is not limited to this, and the light-emitting element may be a current-driven electro-optic element whose luminescence changes according to the current value flowing through the element, such as an inorganic EL element, an LED element, or a semiconductor laser element. Furthermore, when the semiconductor device 800 functions as a light-emitting device, instead of the self-luminescent elements described above, the semiconductor device 800 may include an illumination device, and liquid crystal elements in an LCD (liquid crystal display) or reflective elements in a DMD (digital mirror device) that control the light emitted from the illumination device may be arranged as pixels 70 in pixel region AA. Also, as described above, each of the pixels 70 may include a photoelectric conversion element, and the semiconductor device 800 may function as a photoelectric conversion device.

[0012] The peripheral region PA is located outside the pixel region AA and may include a region where ineffective pixels are provided. Ineffective pixels may be, for example, dummy pixels. If pixel 70 includes a light-emitting element, the dummy pixels do not emit light; for example, they may be pixels that measure the current flowing through them. Also, if pixel 70 includes a photoelectric conversion element, the dummy pixels may be shielded from light. For this reason, ineffective pixels may also be called reference elements, test elements, monitor elements, etc.

[0013] As shown in Figure 1(b), the semiconductor device 800 includes a wiring member 200 containing multiple electrodes 210 connected to each of the multiple terminals 40, and a bonding member 300 disposed between the multiple terminals 40 and the multiple electrodes 210. Alignment marks 50 disposed in the peripheral region PA are used for alignment when connecting the multiple terminals 40 and the multiple electrodes 210. In Figure 1(a), the alignment marks 50 are shown as a cross pattern, but any pattern such as a square pattern or a circular pattern can be used. The semiconductor device 800 can operate when the element substrate 100 is connected to an external power supply or control device via the wiring member 200.

[0014] Here, a transparent insulating layer 80 is disposed on the alignment mark 50. The transparent insulating layer 80 covers the alignment mark 50 and does not cover between the plurality of terminals 40 and each terminal of the plurality of terminals 40. Details of the transparent insulating layer 80 will be described later.

[0015] In the pixel region AA of the element substrate 100, a semiconductor element 20, a wiring pattern 30, an interlayer insulating layer 60, and a pixel 70 are disposed. In the peripheral region PA of the element substrate 100, terminals 40, alignment marks 50, a peripheral circuit (not shown), etc. are disposed. The substrate 10 of the element substrate 100 can be a semiconductor substrate such as single crystal silicon. The semiconductor element 20 can be a transistor or a diode, and at least a part of it can be disposed in the substrate 10. The wiring pattern 30 can include a pattern disposed in a single-layer or multi-layer wiring layer using a conductor such as aluminum or copper, via plugs and contact plugs that connect the wiring layers, the wiring patterns disposed in the wiring layers, and the semiconductor element 20. The terminals 40 may be formed simultaneously when forming the wiring pattern 30 disposed in any wiring layer. It can be said that at least a part of the terminals 40 and the wiring pattern 30 are disposed in the same wiring layer. The interlayer insulating layer 60 can include silicon oxide, silicon nitride, silicon carbide, etc. Here, silicon oxynitride and silicon carbonitride are regarded as a kind of silicon nitride because nitrogen and silicon are the main elements.

[0016] In the pixel region AA of the element substrate 100, a plurality of pixels 70 are disposed. In FIG. 1(a), the pixels 70 are drawn integrally, each including a light-emitting element and emitting light at an arbitrary luminance. Each pixel 70 is connected to the wiring pattern 30 via a via provided in the interlayer insulating layer 60 and is electrically connected to the semiconductor element 20 via the wiring pattern 30. Although not shown in FIG. 1(a), a passivation film, a color filter layer, a lens structure, etc. for suppressing the intrusion of moisture, oxygen, etc. can be appropriately provided on the pixels 70. Further, a light-transmissive counter substrate using glass, acrylic, etc. can be appropriately disposed on the element substrate 100 so as to cover at least the pixel region AA.

[0017] Next, the details of the transparent insulating layer 80, the alignment mark 50, and the terminal 40 will be described using FIG. 1(b). Here, the region in the peripheral region PA where the alignment mark 50 and the terminal 40 are arranged may be referred to as the terminal region. In the terminal region of the element substrate 100, the terminal 40, the interlayer insulating layer 60, and the alignment mark 50 are provided, and the transparent insulating layer 80 is provided on the alignment mark 50. The transparent insulating layer 80 is not arranged above or between the terminals 40. As will be described later, the alignment error can be reduced by not arranging the transparent insulating layer 80 above or between the terminals 40. The transparent insulating layer 80 may be composed of a transparent inorganic material such as silicon oxide, silicon nitride, or aluminum oxide. Further, the transparent insulating layer 80 may be composed of a transparent resin material such as an acrylic resin, an epoxy resin, or a silicone resin.

[0018] The electrode 210 provided on the surface side of the wiring member 200 facing the element substrate 100 is electrically joined to the terminal 40 via the joining member 300. The wiring member 200 may be a wiring substrate such as a rigid substrate or a flexible substrate. For example, the wiring member 200 is a flexible circuit board such as a glass epoxy substrate or a polyimide film provided with a wiring pattern, and an electrode 210 using copper or the like is arranged on the main surface of the flexible circuit board. Further, a drive circuit chip or the like for operating the pixel region AA may be arranged on the wiring member 200. The joining member 300 may be a conductive member such as solder or an ACF (anisotropic conductive film). In the configuration shown in FIG. 1(b), an example in which an ACF is used as the joining member 300 is shown. Also, when the terminal 40 of the element substrate 100 and the terminal of the above-described drive circuit chip or the like are electrically joined using a wire such as gold, the wiring member 200 and the joining member 300 are included in this wire.

[0019] In this embodiment, as shown in Figure 1(b), the transparent insulating layer 80 is placed only on and around the alignment marks 50, and does not cover the terminals 40 or the spaces between each terminal 40. Furthermore, the surface of the terminals 40 protrudes more than the surface of the interlayer insulating layer 60. In other words, in the terminal region of the element substrate 100 facing the electrodes 210 of the wiring member 200, the surface of the terminals 40 protrudes the most. For example, in ACF bonding, conductive particles in the resin binder are sandwiched and pressed between the terminals 40 and the electrodes 210 of the wiring member 200 to form an electrical bond.

[0020] In this case, as shown in Patent Document 1, if a transparent insulating layer 80 is placed between the terminals 40, the transparent insulating layer 80 makes it easier for uniform pressure to be applied to the entire terminal area. In other words, it becomes difficult to apply pressure between the terminals 40 of the element substrate 100 and the electrodes 210 of the wiring member 200. Also, the electrodes 210 of the wiring member 200 are more likely to ride up (come into contact with) the transparent insulating layer 80 covering the space between the terminals 40, which can lead to poor connections. For example, the stress acting between the electrode 210 and the transparent insulating layer 80 in contact with the electrode 210 may prevent the electrode 210 of the wiring member 200 from being accurately aligned with the corresponding terminal 40. On the other hand, in this embodiment, the transparent insulating layer 80 does not cover the terminals 40 and the space between them. Therefore, the surface of the terminal 40 protrudes, and the terminal 40 can locally apply pressure to the joining member 300, increasing the reliability of the electrical connection between the terminal 40 and the electrode 210. In addition, alignment deviations caused by the electrode 210 contacting the transparent insulating layer 80 are suppressed. As a result, electrical connection failures between the terminal 40 of the element substrate 100 and the electrode 210 of the wiring member 200 can be suppressed.

[0021] Furthermore, the transparent insulating layer 80 covers the alignment marks 50. In the manufacturing process of the semiconductor device 800, the alignment marks 50 may be exposed to chemicals in processes such as development and photoresist stripping. Also, in dry etching and ashing processes, the alignment marks 50 may be exposed to reactive gases in the plasma. Therefore, by covering the alignment marks 50 with the transparent insulating layer 80, it is possible to suppress deterioration and damage to the alignment marks 50 during the manufacturing process of the semiconductor device 800. In other words, alignment errors such as the alignment marks 50 becoming deteriorated and unrecognizable during alignment processes such as connecting the element substrate 100 and the wiring member 200 are suppressed. In addition, since the alignment marks 50 are not damaged, their shape is maintained, making it possible to perform alignment with high precision.

[0022] In this way, the transparent insulating layer 80 covers the alignment marks 50 but does not cover the multiple terminals 40 or the spaces between each terminal of the multiple terminals 40. This makes it possible to achieve high precision in alignment between the element substrate 100 and the wiring member 200 when manufacturing the semiconductor device 800 and to suppress bonding defects. As a result, the reliability of the semiconductor device 800 can be improved.

[0023] Next, the manufacturing method of the semiconductor device 800 will be explained using Figures 2(a) to 2(c). Here, as an example, the manufacturing method of a semiconductor device 800 that functions as a light-emitting device in which each of the pixels 70 is equipped with an organic EL element will be explained. Figures 2(a) to 2(c) show cross-sectional views of the pixel region AA and the terminal region of the peripheral region PA, respectively.

[0024] Figure 2(a) shows a cross-section of the element substrate 100 after the process of forming the light-emitting elements of the pixels 70 has been completed. First, semiconductor elements 20 such as transistors are formed on a substrate 10 made of a semiconductor such as silicon. Here, the main surface MS of the element substrate 100 is defined as the surface on which the semiconductor elements 20 and pixels 70 are formed on the substrate 10. This is because the element substrate 100 has its constituent elements arranged on the main surface (main surface MS) of the substrate 10, and the main surface (main surface MS) of the substrate 10 can serve as a reference when arranging the constituent elements. The semiconductor elements 20 are formed in at least the pixel region AA. Next, an interlayer insulating layer 60 is formed on the substrate 10 and the semiconductor elements 20. Silicon oxide, silicon nitride, silicon carbide, etc., can be used for the interlayer insulating layer 60. The interlayer insulating layer 60 is provided not only in the pixel region AA but also in the peripheral region PA. Contact plugs electrically connected to the semiconductor elements 20 are provided on the interlayer insulating layer 60. Conductive materials such as tungsten may be used for the contact plugs. The interlayer insulating layer 60 is provided with a wiring pattern 30 that is electrically connected to the semiconductor element 20 via a contact plug. For example, the wiring pattern 30 can be made of a metal such as aluminum or copper. In this case, in order to suppress metal diffusion into the interlayer insulating layer 60, a barrier layer made of titanium, tantalum, titanium nitride, tantalum nitride, or the like may be provided at the interface between the interlayer insulating layer 60 and the wiring pattern 30.

[0025] In the peripheral region PA of the element substrate 100, terminals 40 and alignment marks 50 may be formed in the same layer as any of the wiring layers on which the wiring pattern 30 is arranged. In the stage shown in Figure 2(a), the interlayer insulating layer 60 covering the terminals 40 and alignment marks 50 is removed, leaving the terminals 40 and alignment marks 50 exposed. When the alignment marks 50 are formed simultaneously with the wiring pattern 30, a low-reflectivity material such as titanium nitride used as a barrier layer may remain on the outermost surface of the alignment marks 50, potentially reducing the visibility of the alignment marks 50. Therefore, to improve the visibility of the alignment marks 50, after forming the alignment marks 50 simultaneously with the wiring pattern 30, the interlayer insulating layer 60 covering the alignment marks 50 is etched. Subsequently, the barrier layer such as titanium nitride on the alignment marks 50 may be removed.

[0026] In pixel region AA, a pixel 70 containing an organic EL element is provided on the interlayer insulating layer 60. The pixel 70 may be electrically connected to the wiring pattern 30. The pixel 70 may also be electrically connected to the semiconductor element 20. The organic EL element in the pixel 70 may include a pixel electrode, a counter electrode, and an organic light-emitting layer disposed between the pixel electrode and the counter electrode. The organic light-emitting layer may, for example, emit white light. A pixel isolation layer 110 may be disposed between adjacent pixels 70 to suppress short circuits between organic EL elements due to differences in the pixel electrode steps. A hole injection layer and a hole transport layer may be formed between the organic light-emitting layer and the pixel electrode to facilitate the injection and transport of holes from the pixel electrode. An electron transport layer and an electron injection layer may also be formed between the organic light-emitting layer and the counter electrode to facilitate the injection and transport of electrons from the counter electrode.

[0027] Figure 2(b) shows a cross-section of the element substrate 100 before the alignment process, which electrically connects the element substrate 100 and the wiring member 200. A sealing layer 120 is formed on the pixels 70 to suppress moisture from penetrating to the organic EL elements. In this embodiment, by providing the sealing layer 120 on the pixels 70 on the alignment marks 50 arranged in the peripheral region PA, the sealing layer 120 is used as a transparent insulating layer 80. It can also be said that the transparent insulating layer 80 covers not only the alignment marks 50 but also multiple pixels 70. By forming the transparent insulating layer 80 and the sealing layer 120 simultaneously, a transparent insulating layer 80 covering the alignment marks 50 can be formed without adding any extra steps.

[0028] Any transparent inorganic insulating film material can be used as the sealing layer 120 and the transparent insulating layer 80. In this embodiment, silicon nitride is used for the sealing layer 120 and the transparent insulating layer 80, and the film thickness is 1.5 μm. The transmittance of the sealing layer 120 and the transparent insulating layer 80 may be, for example, 80% or more in the visible light wavelength range (400 to 650 nm), and may be 90% or more in order to improve the visibility of the alignment mark 50.

[0029] If the sealing layer 120 is thick, the visibility of the alignment marks 50 may decrease. In this case, the sealing layer 120 on the alignment marks 50 may be etched and thinned to form a transparent insulating layer 80. Alternatively, for example, if multiple sealing layers 120 are arranged to cover multiple pixels 70, the upper layers may be etched, leaving only the layer in contact with the alignment marks 50, to form a transparent insulating layer 80. The transparent insulating layer 80 can be said to constitute one of the multiple sealing layers 120. This suppresses a decrease in the transmittance of the transparent insulating layer 80 in the visible light wavelength range.

[0030] Next, a resin planarization layer 130 is formed on the sealing layer 120. In Figure 2(b), the upper surface of the sealing layer 120 is depicted as flat, but there are irregularities between each pixel 70 due to the organic EL elements and the pixel separation layer 110. To improve the patterning accuracy in the color filter layer formation process described later, the resin planarization layer 130 is formed to flatten the irregularities on the upper surface of the sealing layer 120. Any transparent resin material can be used as the resin planarization layer 130. In this embodiment, a UV-curable acrylic resin is used for the resin planarization layer 130, and it is formed in the pixel region AA and the peripheral region PA excluding the terminal region. The film thickness of the resin planarization layer 130 may be, for example, about 0.5 μm.

[0031] A color filter layer 140 (also called a coloring layer) covering multiple pixels 70 is placed on top of the resin planarization layer 130. As described above, when a process using an insulating film formed simultaneously on the sealing layer 120 and the transparent insulating layer 80 is employed, the transparent insulating layer 80 can also be said to be placed between the multiple pixels 70 and the color filter layer 140. The color filter layer 140 includes multiple color filters. For example, it may include a red color filter 140R that transmits red light, a green color filter 140G that transmits green light, and a blue color filter 140B that transmits blue light. In this embodiment, the organic EL elements placed in the pixels 70 emit white light, and color display can be achieved by placing RGB color filter layers 140 for each pixel 70. A lens structure or the like to improve light extraction efficiency may be separately provided on top of the color filter layer 140.

[0032] Figure 2(c) shows a cross-section when the element substrate 100 and the wiring member 200 are joined via the bonding member 300. As shown in Figure 2(c), in the terminal region of the peripheral region PA of the element substrate 100, the terminal 40 of the element substrate 100 and the electrode 210 of the wiring member 200 are electrically joined via the bonding member 300. In this embodiment, a flexible wiring substrate is used as the wiring member 200, and an anisotropic conductive film (ACF) tape is used as the bonding member 300. The surface of the wiring member 200 on which the electrode 210 is formed is placed facing the element substrate 100, and alignment is performed using the alignment marks 50 on the element substrate 100 and the alignment marks 220 on the wiring member 200. Then, the electrode 210 of the wiring member 200 and the terminal 40 of the element substrate 100 are thermocompressed via the bonding member 300. At this time, the thermocompression temperature may be set to 100°C so that the organic EL elements arranged in the pixel 70 do not degrade due to heat. The bonding member 300 contains conductive particles CP in an epoxy resin binder, and the conductive particles CP are sandwiched between the electrodes 210 of the wiring member 200 and the terminals 40 of the element substrate 100, thereby forming an electrical bond. Including the above steps, the semiconductor device 800 that functions as a light-emitting device of this embodiment is completed.

[0033] In this embodiment, in the terminal region located in the peripheral region PA of the element substrate 100, the transparent insulating layer 80 covers the alignment marks 50 but does not cover the terminals 40 or the spaces between each terminal 40. Therefore, electrical bonding by crimping between the terminals 40 of the element substrate 100 and the electrodes 210 of the wiring member 200 can be achieved more reliably. In addition, bonding failures caused by the electrodes 210 of the wiring member 200 riding up onto the transparent insulating layer 80 located between the terminals 40 can be suppressed.

[0034] Furthermore, as shown in Figure 2(c), the transparent insulating layer 80 and the bonding member 300 may be arranged so as not to overlap in the orthogonal projection onto the main surface MS of the element substrate 100. By forming the bonding member 300 so as not to overlap the transparent insulating layer 80, it is possible to suppress the occurrence of cracks in the transparent insulating layer 80 due to conductive particles CP contained in the ACF during thermocompression bonding. In addition, the resin binder of the ACF softens during thermocompression bonding and tends to protrude outward (left and right direction in Figure 2(c)). However, the transparent insulating layer 80 blocks the resin binder of the ACF, thereby suppressing unwanted protrusion of the resin binder.

[0035] As described above, in this embodiment, the sealing layer 120 is also formed on the alignment marks 50 and used as the transparent insulating layer 80. However, it is not limited to this. For example, the resin planarization layer 130 may be formed on the alignment marks 50 and used as the transparent insulating layer 80. In this case, the transparent insulating layer 80 is made of a resin material.

[0036] As described above, according to this embodiment, by covering the alignment marks 50 with a transparent insulating layer 80, deterioration and damage to the alignment marks 50 during the manufacturing process are suppressed, and alignment errors that occur due to the alignment marks 50 not being recognized are suppressed. Furthermore, by not placing the transparent insulating layer 80 between the terminals 40 and each terminal 40, it becomes possible to join the element substrate 100 and the wiring member 200 with high precision and quality. As a result, it is possible to improve the reliability of the semiconductor device 800 while accommodating the narrowing of the terminal pitch due to the miniaturization of the semiconductor device 800.

[0037] Next, a modified example of the element substrate 100 of the semiconductor device 800 will be described using Figures 3(a) and 3(b). Figure 3(a) is a plan view of the semiconductor device 800', and Figure 3(b) is a cross-sectional view between Y and Y' in Figure 3(a). The semiconductor device 800' is equipped with a light-shielding member 90 that surrounds the outer edge of the alignment mark 50 in an orthogonal projection onto the main surface MS of the element substrate 100. It also differs from the semiconductor device 800 described above in that the alignment mark 50 is not covered by the transparent insulating layer 80. The other configurations of the semiconductor device 800' may be the same as those of the semiconductor device 800, so the following description will focus on the differences.

[0038] As described above, a transparent insulating layer 80 covers the alignment marks 50 placed on the element substrate 100 (semiconductor device 800) so that they are not exposed to chemicals or reactive gases during the manufacturing process of the element substrate 100 (semiconductor device 800). However, depending on the manufacturing process of the element substrate 100 (semiconductor device 800), the alignment marks 50 are not necessarily exposed to chemicals or reactive gases. For example, there may be cases where there is no process after the alignment marks 50 are formed in which the alignment marks 50 are exposed to chemicals or reactive gases. Also, for example, there may be cases where the chemicals or reactive gases used in processes after the formation of the alignment marks 50 do not alter the alignment marks 50. Furthermore, for example, there may be a process to remove the transparent insulating layer 80 before joining the element substrate 100 and the wiring member 200. In such cases, as shown in Figure 3(b), the alignment marks 50 may be exposed. Furthermore, as will be described later using Figures 4(a) to 4(c), the alignment marks 50 may be covered by a transparent insulating layer 80, and a light-shielding member 90 may also be provided.

[0039] As shown in Figures 3(a) and 3(b), in the terminal region of the peripheral region PA, terminals 40 and alignment marks 50 are provided on the interlayer insulating layer 60, and a light-shielding member 90 is provided so as to surround the outer periphery of the alignment marks 50. The light-shielding member 90 does not cover the multiple terminals 40 or the spaces between each terminal of the multiple terminals 40.

[0040] In the alignment process when joining the element substrate 100 and the wiring member 200, illumination light such as white light is shone on the alignment marks 50 provided on the element substrate 100. Then, using a CCD camera or the like, the alignment marks 50 are recognized from the difference (contrast) of reflected light between the alignment marks 50 and the surrounding area. If the difference in reflected light between the alignment marks 50 and the surrounding area is small, the edges of the alignment marks 50 cannot be accurately detected, which can lead to alignment misalignment or alignment errors.

[0041] The interlayer insulating layer 60 may be a light-transmitting inorganic material. Therefore, the visibility of the alignment mark 50 may be reduced due to reflected light from the substrate 10 (e.g., a silicon substrate) around the alignment mark 50.

[0042] Furthermore, in the peripheral region PA, multiple wiring patterns 30 may be arranged in the layer between the main surface MS of the element substrate 100 and the alignment mark 50. More specifically, when forming copper wiring patterns 30 using a damascene process, if the density difference of the wiring patterns 30 within the substrate surface becomes large, defects such as dishing and erosion may occur during the CMP (Chemical Mechanical Polishing) process. To suppress dishing and erosion, as shown in Figure 3(b), wiring patterns 30 may also be arranged in the terminal region of the peripheral region PA within the interlayer insulating layer 60. The wiring patterns 30 arranged in the terminal region of the peripheral region PA may be dummy patterns to suppress dishing and erosion. The wiring patterns 30 arranged in the terminal region of the peripheral region PA cause the area around the alignment mark 50 to have reflected light from the wiring patterns 30 in addition to reflected light from the substrate 10, which reduces the visibility of the alignment mark 50.

[0043] In this embodiment, a light-shielding member 90 is arranged to surround the alignment mark 50. This suppresses reflected light from the substrate 10 and reflected light from the wiring pattern 30. As a result, the visibility of the alignment mark 50 is improved, alignment errors are suppressed, and the alignment accuracy with the wiring member 200 is improved. Consequently, the reliability of the semiconductor device 800' can be improved.

[0044] Figures 4(a) to 4(c) show modified cross-sectional views of the terminal region of the peripheral region PA of the element substrate 100. As shown in Figure 4(a), the transparent insulating layer 80 described above may be provided, which covers the alignment mark 50 but does not cover the multiple terminals 40 and the spaces between each terminal of the multiple terminals 40. In this case, as shown in Figure 4(a), the light-shielding member 90 may be covered by the transparent insulating layer 80. This structure is effective when the alignment mark 50 is altered or damaged by exposure to chemicals or reactive gases during the manufacturing process of the semiconductor device 800'. Furthermore, the configuration shown in Figure 4(a) can suppress a decrease in light-shielding performance due to alteration or damage of the light-shielding member 90.

[0045] Furthermore, in the manufacturing process of the semiconductor device 800', if a process that suppresses deterioration or damage to the light-shielding member 90 can be used, the light-shielding member 90 may be formed on top of the transparent insulating layer 80, as shown in Figure 4(b). In other words, the transparent insulating layer 80 may be placed in the layer between the alignment mark 50 and the light-shielding member 90. In the configuration shown in Figure 4(b), for example, the alignment mark 50 may be covered with the transparent insulating layer 80 immediately after it is formed. In this case, deterioration or damage to the alignment mark 50 during the manufacturing process can be minimized. Also, as will be described later, if a color filter layer 140 is used as the light-shielding member 90 and a resin planarization layer 130 is used as the transparent insulating layer 80, the structure shown in Figure 4(b) can be obtained without adding any steps by sequentially forming the resin planarization layer 130 and the color filter layer 140.

[0046] Furthermore, as shown in Figure 4(c), the light-shielding member 90 may be located in the layer between the main surface MS of the element substrate 100 and the alignment mark 50. Since the light-shielding member 90 is provided inside the interlayer insulating layer 60, the materials that can be used as the light-shielding member 90 are limited, but for example, a low-reflectivity material such as titanium nitride, which is used in the barrier layer described above, can be used for the light-shielding member 90.

[0047] Furthermore, the light-shielding member 90 can be made of any material that is low-reflectivity and light-shielding. For example, the light-shielding member 90 may be a black resin containing carbon black or the like, or titanium nitride used in the color filter layer 140 and the barrier layer. Materials suitable for the manufacturing process of each configuration shown in Figures 3(a), 3(b) and 4(a) to 4(c) may be appropriately selected. They may also be used in combination. For example, a black resin may be placed at the position shown in Figure 4(a), a color filter used in the color filter layer 140 may be further placed at the position shown in Figure 4(b), and titanium nitride used in the barrier layer may be additionally placed at the position shown in Figure 4(c).

[0048] Here, we will describe the case in which the color filter layer 140 is used as a light-shielding member 90. As described above, the color filter layer 140 includes multiple color filters. In this case, one or more of the multiple color filters may function as the light-shielding member 90. For example, the most inconspicuous color filter in the color filter layer 140 is the blue color filter 140B. Therefore, the light-shielding member 90 may include the blue color filter 140B, which transmits blue light, among the multiple color filters. Furthermore, multiple color filters may be stacked to make the color closer to black. For example, by stacking the blue color filter 140B and the red color filter 140R, a light-shielding member 90 that is close to black can be formed. In addition, RGB color filters may be stacked.

[0049] In this way, by providing the light-shielding member 90 so as to surround the alignment mark 50, the visibility of the alignment mark 50 is improved. Furthermore, by combining the transparent insulating layer 80 and the light-shielding member 90, it is possible to suppress the alignment mark 50 becoming difficult to recognize due to deterioration or damage during manufacturing. As a result, it is possible to achieve higher precision in alignment between the element substrate 100 and the wiring member 200 and suppress bonding defects when manufacturing the semiconductor device 800. Consequently, the reliability of the semiconductor device 800 can be improved.

[0050] Here, using Figures 5 to 11(a) and 11(b), we will describe application examples of the semiconductor devices 800 and 800' of this embodiment, which function as light-emitting devices with organic EL elements arranged as light-emitting elements in the pixels 70, applied to display devices, photoelectric converters, electronic devices, lighting devices, mobile devices, and wearable devices. First, we will show the details and modified versions of each configuration of the semiconductor devices 800 and 800' that function as light-emitting devices as described above, and then we will describe the application examples.

[0051] Structure of an organic light-emitting device An organic light-emitting element is provided on a substrate by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode. A protective layer, a color filter, a microlens, etc., may be provided on the cathode. If a color filter is provided, a planarization layer may be provided between it and the protective layer. The planarization layer can be made of acrylic resin or the like. The same applies when a planarization layer is provided between the color filter and the microlens.

[0052] substrate Examples of substrates include quartz, glass, silicon wafers, resins, and metals. The substrate may also be equipped with switching elements such as transistors and wiring, and an insulating layer may be provided on top of them. The insulating layer can be made of any material that allows for the formation of contact holes between it and the first electrode, while ensuring insulation from wiring that is not connected. For example, resins such as polyimide, silicon oxide, and silicon nitride can be used.

[0053] electrode A pair of electrodes can be used. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer can be the anode, and the electrode that supplies electrons can be the cathode.

[0054] For the anode, materials with the largest possible work function are preferable. For example, elemental metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, and tungsten, or mixtures containing these, or alloys combining them, as well as metal oxides such as tin oxide, zinc oxide, indium oxide, tin-indium oxide (ITO), and zinc-indium oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

[0055] These electrode materials may be used individually or in combination of two or more. Furthermore, the anode may consist of a single layer or multiple layers.

[0056] When used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminates thereof can be used. It is also possible to use the above materials as a reflective film without serving as an electrode. Furthermore, when used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO) or indium zinc oxide can be used, but are not limited to these. Photolithography can be used to form the electrodes.

[0057] On the other hand, materials with a small work function are preferred for the cathode. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, and elemental metals or mixtures containing aluminum, titanium, manganese, silver, lead, and chromium. Alternatively, alloys combining these elemental metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, and zinc-silver can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used individually or in combination of two or more. The cathode may also be a single-layer or multi-layer structure. Among these, silver is preferred, and a silver alloy is even more preferred to reduce silver aggregation. The alloy ratio is not important as long as silver aggregation is reduced. For example, the ratio of silver to other metals may be 1:1, 3:1, etc.

[0058] The cathode may be a top-emission element using an oxide conductive layer such as ITO, or a bottom-emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but using DC and AC sputtering methods is more preferable because it provides good film coverage and makes it easier to reduce resistance.

[0059] organic compound layer The organic compound layer may be formed as a single layer or as multiple layers. If there are multiple layers, they may be called a hole injection layer, a hole transport layer, an electron blocking layer, an emissive layer, a hole blocking layer, an electron transport layer, or an electron injection layer, depending on their function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms and inorganic compounds. For example, it may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be placed between the first electrode and the second electrode, or it may be placed in contact with the first electrode and the second electrode.

[0060] protective layer A protective layer may be provided on the cathode. For example, by bonding glass with a desiccant to the cathode, the intrusion of water and other substances into the organic compound layer can be reduced, thereby reducing the occurrence of display defects. In another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water and other substances into the organic compound layer. For example, after forming the cathode, it may be transported to another chamber without breaking the vacuum and a silicon nitride film with a thickness of 2 μm may be formed by the CVD method to serve as a protective layer. A protective layer may also be provided using atomic deposition (ALD) after the film formation by the CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed on the film formed by the ALD method by the CVD method. The film formed by the ALD method may have a thinner film thickness than the film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

[0061] Color filter A color filter may be provided on top of the protective layer. For example, a color filter that takes into account the size of the organic light-emitting element may be provided on a separate substrate and bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned on the protective layer as described above using photolithography technology. The color filter may be made of polymer.

[0062] planarization layer A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer is provided to reduce the unevenness of the layer below. It may also be called a material resin layer without limiting its purpose. The planarizing layer may be composed of an organic compound, which may be low molecular weight or high molecular weight, but high molecular weight is preferred.

[0063] The planarization layer may be provided above or below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, urea resin, etc.

[0064] Microlens An organic light-emitting device may have optical elements such as microlenses on its light-emitting side. Microlenses may be made of acrylic resin, epoxy resin, or the like. Microlenses may be used to increase the amount of light extracted from the organic light-emitting device or to control the direction of the extracted light. Microlenses may have a hemispherical shape. If they have a hemispherical shape, among the tangents tangent to the hemisphere, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be similarly determined in any cross-sectional view. That is, among the tangents tangent to the semicircle of the microlens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the point of contact between that tangent and the semicircle is the vertex of the microlens.

[0065] Furthermore, the midpoint of a microlens can also be defined. In the cross-section of a microlens, a line segment can be imagined from the point where one arc ends to the point where another arc ends, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section used to determine the vertices and midpoints may be a cross-section perpendicular to the insulating layer.

[0066] Opposing board A counter substrate may be provided on the planarized layer. The counter substrate is called a counter substrate because it is provided in a position corresponding to the aforementioned substrate. The constituent material of the counter substrate may be the same as that of the aforementioned substrate. The counter substrate may be the second substrate if the aforementioned substrate is referred to as the first substrate.

[0067] organic layer The organic compound layer (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element according to one embodiment of the present invention is formed by the method shown below.

[0068] The organic compound layer constituting the organic light-emitting element according to one embodiment of the present invention can be formed using a dry process such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Alternatively, instead of a dry process, a wet process can be used in which the layer is formed by dissolving the compound in a suitable solvent and applying a known coating method (e.g., spin coating, dipping, casting, LB method, inkjet method, etc.).

[0069] When layers are formed using methods such as vacuum deposition or solution coating, crystallization is less likely to occur, resulting in excellent stability over time. Furthermore, when forming films using coating methods, it is possible to combine the film with an appropriate binder resin.

[0070] Examples of the binder resins mentioned above include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea resin.

[0071] Furthermore, these binder resins may be used individually as homopolymers or copolymers, or as a mixture of two or more types. Additionally, known additives such as plasticizers, antioxidants, and UV absorbers may be used in combination as needed.

[0072] Pixel circuit The light-emitting device may have a pixel circuit connected to a light-emitting element. The pixel circuit may be an active-matrix type that independently controls the light emission of a first light-emitting element and a second light-emitting element. The active-matrix type circuit may be voltage-programmed or current-programmed. The drive circuit has a pixel circuit for each pixel. The pixel circuit may have a light-emitting element, a transistor that controls the light emission brightness of the light-emitting element, a transistor that controls the light emission timing, a capacitor that holds the gate voltage of the transistor that controls the light emission brightness, and a transistor for connecting to GND without going through the light-emitting element.

[0073] The light-emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors constituting the pixel circuit may be smaller than the mobility of the transistors constituting the display control circuit.

[0074] The slope of the current-voltage characteristics of the transistors constituting the pixel circuit can be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured using the so-called Vg-Ig characteristic.

[0075] The transistors that make up the pixel circuit are transistors connected to light-emitting elements, such as the first light-emitting element.

[0076] pixels The organic light-emitting device has multiple pixels. Each pixel has subpixels that emit light of a different color from the others. The subpixels may each have, for example, RGB light-emitting colors.

[0077] A pixel emits light in a region also called the pixel aperture. This region is the same as the first region. The pixel aperture may be 15 μm or less, or 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

[0078] The distance between subpixels may be 10 μm or less, specifically 8 μm, 7.4 μm, or 6.4 μm.

[0079] Pixels can take on known arrangements in a plan view. For example, they may be in a stripe arrangement, delta arrangement, pentile arrangement, or Bayer arrangement. The shape of subpixels in a plan view may be any known shape. For example, rectangles, rhombuses, hexagons, etc. Of course, even if it is not a precise shape, if it is close to a rectangle, it is included in the category of rectangles. The shape of subpixels and the pixel arrangement can be used in combination.

[0080] Applications of the organic light-emitting element according to one embodiment of the present invention An organic light-emitting element according to one embodiment of the present invention can be used as a component of a display device or lighting device. Other applications include exposure light sources for electrophotographic image forming apparatuses, backlights for liquid crystal display devices, and light-emitting devices with a color filter in a white light source.

[0081] The display device may also be an image information processing device that has an image input unit for receiving image information from an area CCD, linear CCD, memory card, etc., an information processing unit for processing the input information, and displays the input image on the display unit.

[0082] Furthermore, the display unit of the imaging device or inkjet printer may have a touch panel function. The driving method for this touch panel function may be infrared, capacitive, resistive, or electromagnetic induction, and is not particularly limited. The display device may also be used as the display unit of a multifunction printer.

[0083] The following will provide a detailed explanation using Figures 5 to 11(a) and 11(b).

[0084] Figure 5 is a schematic diagram showing an example of a display device using semiconductor devices 800 and 800' that function as light-emitting devices in this embodiment. The display device 1000 may have a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Active elements such as transistors are arranged on the circuit board 1007. The battery 1008 does not need to be provided if the display device 1000 is not a portable device, and even if it is a portable device, it does not need to be provided in this position. Semiconductor devices 800 and 800' can be applied to the display panel 1005. The pixel area AA of the semiconductor devices 800 and 800' that function as the display panel 1005 is connected to and operates with active elements such as transistors arranged on the circuit board 1007.

[0085] The display device 1000 shown in Figure 5 may be used as the display unit of a photoelectric conversion device (imaging device) having an optical unit with multiple lenses and an image sensor that receives light passing through the optical unit and converts it into an electrical signal. The photoelectric conversion device may have a display unit that displays information acquired by the image sensor. Furthermore, the display unit may be an external display unit exposed to the outside of the photoelectric conversion device, or a display unit located inside the viewfinder. The photoelectric conversion device may be a digital camera or a digital video camera.

[0086] Figure 6 is a schematic diagram showing an example of a photoelectric converter using semiconductor devices 800 and 800' that function as light-emitting devices of this embodiment. The photoelectric converter 1100 may have a viewfinder 1101, a rear display 1102, an operating unit 1103, and a housing 1104. The photoelectric converter 1100 may also be called an imaging device. The semiconductor devices 800 and 800' of this embodiment can be applied to the display unit, which is the viewfinder 1101 and the rear display 1102. In this case, the pixel area AA of the semiconductor devices 800 and 800' may display not only the image to be captured, but also environmental information, imaging instructions, etc. Environmental information may include the intensity of ambient light, the direction of ambient light, the speed at which the subject is moving, and the possibility that the subject may be obscured by an obstacle.

[0087] Since the optimal timing for imaging is often very short, it is desirable to display information as quickly as possible. Therefore, semiconductor devices 800 and 800' that function as light-emitting devices in which organic light-emitting materials such as organic EL elements are arranged in the pixels 70 may be used in the viewfinder 1101 and the rear display 1102. This is because organic light-emitting materials have a fast response speed. Semiconductor devices 800 and 800' that function as light-emitting devices using organic light-emitting materials are more suitable than liquid crystal displays for these devices where display speed is required.

[0088] The photoelectric converter 1100 has an optical section (not shown). The optical section has multiple lenses, and the light that passes through the optical section is imaged onto a photoelectric converter element (not shown) housed in a light-receiving housing 1104. The focus can be adjusted by adjusting the relative positions of the multiple lenses. This operation can also be performed automatically.

[0089] The semiconductor devices 800, 800', which function as light-emitting devices, may be applied to the display section of an electronic device. In this case, they may have both display and operation functions. Examples of portable terminals include smartphones and other mobile phones, tablets, and head-mounted displays.

[0090] Figure 7 is a schematic diagram showing an example of an electronic device using semiconductor devices 800 and 800' that function as light-emitting devices according to this embodiment. The electronic device 1200 has a display unit 1201, an operation unit 1202, and a housing 1203. The housing 1203 may have a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type response unit. The operation unit 1202 may also be a biometric recognition unit that recognizes fingerprints to unlock or otherwise perform actions. A portable device having a communication unit can also be called a communication device. The semiconductor devices 800 and 800' of this embodiment can be applied to the display unit 1201.

[0091] Figures 8(a) and 8(b) are schematic diagrams showing an example of a display device using semiconductor devices 800 and 800' that function as light-emitting devices according to this embodiment. Figure 8(a) is a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display unit 1302. The semiconductor devices 800 and 800' of this embodiment can be applied to the display unit 1302. The display device 1300 may also have a base 1303 that supports the frame 1301 and the display unit 1302. The base 1303 is not limited to the form shown in Figure 8(a). For example, the lower edge of the frame 1301 may also serve as the base 1303. Also, the frame 1301 and the display unit 1302 may be curved. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0092] Figure 8(b) is a schematic diagram showing another example of a display device using semiconductor devices 800 and 800' that function as light-emitting devices according to this embodiment. The display device 1310 in Figure 8(b) is configured to be foldable and is a so-called foldable display device. The display device 1310 has a first display unit 1311, a second display unit 1312, a housing 1313, and a bending point 1314. The semiconductor devices 800 and 800' of this embodiment can be applied to the first display unit 1311 and the second display unit 1312. The first display unit 1311 and the second display unit 1312 may be a single display device without seams. The first display unit 1311 and the second display unit 1312 can be separated by a bending point. The first display unit 1311 and the second display unit 1312 may each display different images, or they may display a single image together.

[0093] Figure 9 is a schematic diagram showing an example of a lighting device using semiconductor devices 800 and 800' that function as light-emitting devices according to this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion unit 1405. The semiconductor devices 800 and 800' of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering of the light source. The light diffusion unit 1405 can effectively diffuse the light from the light source, such as for lighting up, and deliver light over a wide area. A cover may be provided on the outermost part if necessary. The lighting device 1400 may have both the optical film 1404 and the light diffusion unit 1405, or it may have only one of them.

[0094] The lighting device 1400 is, for example, a device for illuminating a room. The lighting device 1400 may emit white light, daylight white light, or any other color from blue to red. It may have a dimming circuit for adjusting the brightness of these colors. The lighting device 1400 may have a power supply circuit connected to the pixel area AA of the semiconductor device 800, 800' which functions as a light source 1402. The power supply circuit is a circuit that converts AC voltage to DC voltage. White light has a color temperature of 4200K, and daylight white light has a color temperature of 5000K. The lighting device 1400 may also have a color filter. The lighting device 1400 may also have a heat dissipation section. The heat dissipation section releases heat from inside the device to the outside, and examples include metals with high specific heat and liquid silicon.

[0095] Figure 10 is a schematic diagram of an automobile having a taillight, which is an example of a vehicle light fixture using semiconductor devices 800 and 800' that function as light-emitting devices in this embodiment. The automobile 1500 may have a taillight 1501, which may be illuminated when the brakes are applied or otherwise. The semiconductor devices 800 and 800' in this embodiment may also be used as headlights for vehicle light fixtures. The automobile is an example of a mobile body, which may be a ship, drone, aircraft, railway vehicle, industrial robot, etc. The mobile body may have a body and a light fixture installed thereon. The light fixture may indicate the current position of the body.

[0096] The semiconductor devices 800 and 800', which function as light-emitting devices according to this embodiment, can be applied to the tail lamp 1501. The tail lamp 1501 may have a protective member that protects the pixel area AA of the semiconductor devices 800 and 800' that function as the tail lamp 1501. The protective member can be made of any material as long as it has a reasonably high strength and is transparent, but it may be made of polycarbonate or the like. The protective member may also be made of polycarbonate mixed with a frangic acid derivative, an acrylonitrile derivative, or the like.

[0097] The automobile 1500 may have a body 1503 and windows 1502 attached thereto. The windows may be for checking the front and rear of the automobile, or they may be transparent displays. Semiconductor devices 800, 800' that function as light-emitting devices in this embodiment may be used in the transparent displays. In this case, the constituent materials such as electrodes of the semiconductor devices 800, 800' are made of transparent materials.

[0098] Referring to Figures 11(a) and 11(b), further application examples of the semiconductor devices 800 and 800' functioning as light-emitting devices of this embodiment will be described. The semiconductor devices 800 and 800' functioning as light-emitting devices can be applied to systems that can be worn as wearable devices such as smart glasses, head-mounted displays (HMDs), and smart contact lenses. The imaging display device used in such application examples has an imaging device capable of photoelectric conversion of visible light and a light-emitting device capable of emitting visible light.

[0099] Figure 11(a) illustrates a pair of glasses 1600 (smart glasses) according to one application example. An imaging device 1602, such as a CMOS sensor or SPAD, is provided on the front surface of the lens 1601 of the glasses 1600. Semiconductor devices 800 and 800', which function as light-emitting devices in this embodiment, are provided on the back surface of the lens 1601.

[0100] The eyeglasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that provides power to the imaging device 1602 and the semiconductor devices 800, 800' according to each embodiment. The control device 1603 also controls the operation of the imaging device 1602 and the semiconductor devices 800, 800'. The lens 1601 has an optical system formed therein for focusing light onto the imaging device 1602.

[0101] Figure 11(b) illustrates a pair of glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, which is equipped with an imaging device equivalent to an imaging device 1602 and semiconductor devices 800 and 800' that function as light-emitting devices. The lens 1611 has an optical system formed therein for projecting light emitted from the imaging device and semiconductor devices 800 and 800' in the control device 1612, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply that provides power to the imaging device and semiconductor devices 800 and 800', and also controls the operation of the imaging device and semiconductor devices 800 and 800'. The control device 1612 may have a gaze detection unit that detects the wearer's gaze. Gaze detection may use infrared light. The infrared light-emitting unit emits infrared light towards the eyeball of the user who is gazing at the displayed image. An image of the eyeball is obtained by detecting the reflected light from the eyeball of the emitted infrared light with a photodetector. By having a reduction mechanism that reduces the amount of light transmitted from the infrared light-emitting part to the display part in a planar view, the degradation of image quality is reduced.

[0102] The user's gaze towards the displayed image is detected from an image of the eyeball obtained by imaging with infrared light. Any known method can be applied to gaze detection using an image of the eyeball. For example, a gaze detection method based on the Purkinje image obtained by the reflection of the irradiated light from the cornea can be used.

[0103] More specifically, gaze detection processing is performed based on the pupil-corneal reflection method. Using the pupil-corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the pupil image and Purkinje image contained in the captured image of the eyeball, thereby detecting the user's gaze.

[0104] A semiconductor device 800, 800' that functions as a light-emitting device according to one embodiment of the present invention has an imaging device having a light-receiving element, and may control the displayed image based on the user's line of sight information from the imaging device.

[0105] Specifically, the semiconductor devices 800 and 800' determine a first field of view area that the user is fixated on, and a second field of view area other than the first field of view area, based on gaze information. The first and second field of view areas may be determined by the control device of the semiconductor devices 800 and 800', or they may be determined by an external control device and received. In the display area of ​​the semiconductor devices 800 and 800', the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0106] Furthermore, the display area has a first display area and a second display area different from the first display area, and based on gaze information, the area with higher priority is determined from the first display area and the second display area. The first display area and the second display area may be determined by the control devices of the semiconductor devices 800 and 800', or they may be determined by an external control device and received. The resolution of the high-priority area may be controlled to be higher than the resolution of the areas other than the high-priority area. In other words, the resolution of the area with relatively lower priority may be lowered.

[0107] AI may be used to determine the first field of view area and high-priority areas. The AI ​​may be a model configured to estimate the angle of line of sight and the distance to the target object at the end of the line of sight from the image of the eye, using the image of the eye and the direction the eye was actually looking in that image as training data. The AI ​​program may be installed in the semiconductor devices 800, 800', the imaging device, or an external device. If installed in an external device, it is transmitted to the semiconductor devices 800, 800' via communication.

[0108] When display control is based on visual detection, this method is preferably applicable to smart glasses that further include an imaging device for capturing images of the surrounding environment. The smart glasses can display the captured external information in real time.

[0109] The disclosures herein include the following semiconductor devices, light-emitting devices, display devices, photoelectric converters, electronic devices, lighting devices, and mobile devices.

[0110] (Item 1) A semiconductor device comprising an element substrate having a main surface provided with a pixel region where multiple pixels are arranged, and a peripheral region where alignment marks and multiple terminals are arranged, A semiconductor device characterized by comprising a transparent insulating layer that covers the alignment marks and does not cover the plurality of terminals or the spaces between each of the plurality of terminals.

[0111] (Item 2) The semiconductor device according to item 1, characterized in that the transparent insulating layer further covers the plurality of pixels.

[0112] (Item 3) The plurality of sealing layers further comprises a plurality of sealing layers that cover the plurality of pixels, The semiconductor device according to item 1, characterized in that the transparent insulating layer constitutes one of the plurality of sealing layers.

[0113] (Item 4) The semiconductor device according to item 2 or 3, characterized in that the transparent insulating layer is made of an inorganic material.

[0114] (Item 5) The system further comprises a color filter layer covering the plurality of pixels, The semiconductor device according to any one of items 2 to 4, characterized in that the transparent insulating layer is disposed between the plurality of pixels and the color filter layer.

[0115] (Item 6) The system further comprises a color filter layer covering the plurality of pixels, The transparent insulating layer is disposed between the plurality of pixels and the color filter layer. The semiconductor device according to item 2 or 3, characterized in that the transparent insulating layer is made of a resin material.

[0116] (Item 7) The wiring member further comprises a plurality of electrodes connected to each of the plurality of terminals, and a connecting member disposed between the plurality of terminals and the plurality of electrodes, A semiconductor device according to any one of items 1 to 6, characterized in that, in the orthogonal projection onto the main surface, the transparent insulating layer and the bonding member do not overlap.

[0117] (Item 8) A semiconductor device comprising an element substrate having a main surface provided with a pixel region where multiple pixels are arranged, and a peripheral region where alignment marks and multiple terminals are arranged, A semiconductor device characterized in that, in the orthogonal projection onto the main surface, a light-shielding member is provided so as to surround the outer edge of the alignment mark.

[0118] (Item 9) The semiconductor device according to item 8, further comprising a transparent insulating layer that covers the alignment marks and does not cover the plurality of terminals and the spaces between each of the plurality of terminals.

[0119] (Item 10) The semiconductor device according to item 9, characterized in that the light-shielding member is covered by the transparent insulating layer.

[0120] (Item 11) The semiconductor device according to item 9, characterized in that the transparent insulating layer is disposed in the layer between the alignment mark and the light-shielding member.

[0121] (Item 12) The semiconductor device according to item 8, characterized in that the light-shielding member is disposed in the layer between the main surface and the alignment mark.

[0122] (Item 13) A semiconductor device according to any one of items 8 to 12, characterized in that, in the peripheral region, a plurality of wiring patterns are arranged in the layer between the main surface and the alignment mark.

[0123] (Item 14) The system further comprises a color filter layer covering the plurality of pixels, The aforementioned color filter layer includes multiple color filters, A semiconductor device according to any one of items 8 to 13, characterized in that one or more of the aforementioned color filters of multiple colors function as the light-shielding member.

[0124] (Item 15) The semiconductor device according to item 14, characterized in that the light-shielding member includes a color filter that transmits blue light from among the plurality of color filters.

[0125] (Item 16) The semiconductor device according to any one of items 8 to 15, characterized in that the light-shielding member contains a black resin.

[0126] (Item 17) The semiconductor device according to any one of items 8 to 16, characterized in that the light-shielding member contains titanium nitride.

[0127] (Item 18) Including a semiconductor device described in any one of items 1 through 17, A light-emitting device characterized in that each of the plurality of pixels includes a light-emitting element.

[0128] (Item 19) A display device characterized by having a light-emitting device described in item 18 and an active element connected to the light-emitting device.

[0129] (Item 20) It comprises an optical unit having multiple lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image. The photoelectric conversion device is characterized in that the display unit is a display unit that displays an image captured by the image sensor, and has a light-emitting device as described in item 18.

[0130] (Item 21) It comprises a housing on which a display unit is provided, and a communication unit provided in the housing for communicating with the outside, The display unit is an electronic device characterized by having the light-emitting device described in item 18.

[0131] (Item 22) A lighting device having a light source and at least one of a light diffusing section and an optical film, The aforementioned light source is characterized by having the light-emitting device described in item 18.

[0132] (Item 23) A mobile body having an aircraft body and a lighting fixture provided on the aircraft body, The aforementioned light fixture is a mobile body characterized by having a light-emitting device as described in item 18.

[0133] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of symbols]

[0134] 40: Terminal, 50: Alignment mark, 70: Pixel, 80: Transparent insulating layer, 100: Element substrate, 800: Semiconductor device, AA: Pixel area, PA: Peripheral area

Claims

1. A semiconductor device including an element substrate having a main surface on which a pixel region in which a plurality of pixels are arranged and a peripheral region in which an alignment mark and a plurality of terminals are arranged, an interlayer insulating layer disposed in the pixel region and the peripheral region; a transparent insulating layer that covers the alignment marks and does not cover the plurality of terminals and the spaces between the respective terminals of the plurality of terminals; The semiconductor device, wherein the alignment mark and the plurality of terminals are disposed on the interlayer insulating layer and are in contact with the interlayer insulating layer.

2. The semiconductor device according to claim 1 , wherein the transparent insulating layer further covers the plurality of pixels.

3. Further comprising a plurality of sealing layers covering the plurality of pixels, 2. The semiconductor device according to claim 1, wherein the transparent insulating layer constitutes one of the plurality of sealing layers.

4. 3. The semiconductor device according to claim 2, wherein the transparent insulating layer is made of an inorganic material.

5. A color filter layer covering the plurality of pixels is further provided, 3. The semiconductor device according to claim 2, wherein the transparent insulating layer is disposed between the pixels and the color filter layer.

6. 6. The semiconductor device according to claim 5, wherein the transparent insulating layer is made of a resin material.

7. a wiring member including a plurality of electrodes connected to the plurality of terminals, respectively; and a bonding member disposed between the plurality of terminals and the plurality of electrodes, 2. The semiconductor device according to claim 1, wherein the transparent insulating layer and the bonding member do not overlap in an orthogonal projection onto the main surface.

8. Further comprising a transistor disposed in the pixel region, 2. The semiconductor device according to claim 1, wherein the interlayer insulating layer is provided on the transistor.

9. The semiconductor device described in claim 1, characterized in that in a direction perpendicular to the bottom surface of the alignment mark, the thickness of the alignment mark is smaller than the thickness of the transparent insulating layer.

10. A semiconductor device including an element substrate having a main surface on which a pixel region in which a plurality of pixels are arranged and a peripheral region in which an alignment mark and a plurality of terminals are arranged, a light shielding member surrounding an outer edge of the alignment mark in an orthogonal projection onto the main surface; At least a portion of the alignment mark does not overlap with the light shielding member.

11. 11. The semiconductor device according to claim 10, further comprising a transparent insulating layer that covers the alignment marks but does not cover the plurality of terminals and the spaces between the respective terminals of the plurality of terminals.

12. 12. The semiconductor device according to claim 11, wherein the light blocking member is covered with the transparent insulating layer.

13. 12. The semiconductor device according to claim 11, wherein the transparent insulating layer is disposed between the alignment mark and the light shielding member.

14. 11. The semiconductor device according to claim 10, wherein the light shielding member is disposed in a layer between the main surface and the alignment mark.

15. 11. The semiconductor device according to claim 10, wherein a plurality of wiring patterns are arranged in a layer between the main surface and the alignment mark in the peripheral region.

16. A color filter layer covering the plurality of pixels is further provided, the color filter layer includes color filters of a plurality of colors; 11. The semiconductor device according to claim 10, wherein at least one of the color filters of the plurality of colors functions as the light blocking member.

17. 17. The semiconductor device according to claim 16, wherein the light blocking member includes a color filter that transmits blue light among the color filters of the plurality of colors.

18. 11. The semiconductor device according to claim 10, wherein the light blocking member includes a black resin.

19. 11. The semiconductor device according to claim 10, wherein the light shielding member includes titanium nitride.

20. A semiconductor device comprising the semiconductor device according to any one of claims 1 to 19, A light emitting device, wherein each of the plurality of pixels includes a light emitting element.

21. A display device comprising: the light-emitting device according to claim 20; and an active element connected to the light-emitting device.

22. The imaging device includes an optical unit having a plurality of lenses, an image sensor that receives light that has passed through the optical unit, and a display unit that displays an image, 21. A photoelectric conversion device, comprising: the display section for displaying an image captured by the imaging element; and the light-emitting device according to claim 20.

23. A display device having a housing and a communication unit provided in the housing for communicating with an external device, 21. An electronic device, wherein the display section comprises the light-emitting device according to claim 20.

24. A lighting device having a light source and at least one of a light diffusion unit and an optical film, 21. An illumination device, wherein the light source comprises the light emitting device according to claim 20.

25. A moving body having a body and a lighting device provided on the body, A moving body, wherein the lighting device comprises the light emitting device according to claim 20.

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