Photoelectric conversion device and light receiving and emitting device

Abstract

To provide a photoelectric conversion device in which increase in drive voltage is suppressed.SOLUTION: A photoelectric conversion device includes a first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer has a first layer, and a structure having a convex shape between the first layer and the second electrode, and the structure has a first organic compound.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a photoelectric conversion device, a light-emitting and receiving device, an electronic device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0003] A functional panel is known in which pixels provided in a display area include a light-emitting element and a photoelectric conversion element (see Patent Document 1). For example, a functional panel includes a first drive circuit, a second drive circuit, and an area, where the first drive circuit supplies a first selection signal, and the second drive circuit supplies a second selection signal and a third selection signal. The area includes pixels. The pixels include a first pixel circuit, a light-emitting element, a second pixel circuit, and a photoelectric conversion element. The first pixel circuit is supplied with the first selection signal, and acquires an image signal based on the first selection signal. The light-emitting element is electrically connected to the first pixel circuit, and the light-emitting element emits light based on the image signal. The second pixel circuit is also supplied with a second selection signal and a third selection signal during a period when the first selection signal is not supplied. The second pixel circuit acquires an imaging signal based on the second selection signal and supplies the imaging signal based on the third selection signal. The photoelectric conversion element is electrically connected to the second pixel circuit, and the photoelectric conversion element generates an imaging signal. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2020 / 152556 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide a photoelectric conversion device in which an increase in driving voltage is suppressed.Another object of one embodiment of the present invention is to provide a light-emitting and receiving device in which an increase in power consumption is suppressed.Another object of one embodiment of the present invention is to provide an electronic device in which an increase in power consumption is suppressed.Another object of one embodiment of the present invention is to provide a novel photoelectric conversion device, a novel light-emitting and receiving device, or a novel electronic device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0007] One embodiment of the present invention is a photoelectric conversion device including a first electrode, a second electrode, and an organic compound layer. The organic compound layer is located between the first electrode and the second electrode. The organic compound layer includes a first layer. A structure having a convex shape is provided between the first layer and the second electrode. The structure includes the first organic compound.

[0008] Another embodiment of the present invention is a photoelectric conversion device having any one of the above structures, a width of 30 nm or more, a height of 30 nm or more, or both.

[0009] Another embodiment of the present invention is a photoelectric conversion device having the above structure, which includes both a region where the first electrode, the first layer, the structure, and the second electrode are stacked, and a region where the first electrode, the first layer, and the second electrode are stacked.

[0010] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the organic compound layer further includes a second layer, and includes both a region where the first electrode, the first layer, the structure, the second layer, and the second electrode are stacked, and a region where the first electrode, the first layer, the second layer, and the second electrode are stacked.

[0011] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the thickness of the second layer is 15 nm to 100 nm.

[0012] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the second layer includes a third organic compound, the third organic compound is an organic compound having an electron-transport property, and the LUMO level of the first organic compound is lower than the LUMO level of the third organic compound.

[0013] Another embodiment of the present invention is a photoelectric conversion device having the above structure, wherein the second layer includes a third organic compound, the third organic compound has an electron-transporting property, and the difference between the LUMO level of the first organic compound and the LUMO level of the third organic compound is 1 eV or less.

[0014] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the LUMO level of the first organic compound is greater than or equal to −4.5 eV and less than or equal to −3.0 eV.

[0015] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the first layer includes an active layer, the active layer includes a second organic compound, and the LUMO level of the first organic compound is higher than the LUMO level of the second organic compound.

[0016] Another embodiment of the present invention is a photoelectric conversion device having the above structure, in which the active layer includes a second organic compound, and the difference between the LUMO level of the first organic compound and the LUMO level of the second organic compound is 0.5 eV or less.

[0017] Alternatively, in the above structure, another embodiment of the present invention is a semiconductor device having a structure density of 0.04 / μm in a region where the first electrode, the active layer, and the second electrode overlap each other. 2 The above is the photoelectric conversion device.

[0018] Another embodiment of the present invention is a light-emitting and receiving device including any of the above photoelectric conversion devices and a light-emitting device.

[0019] Another embodiment of the present invention is a light-emitting and receiving device including the photoelectric conversion device described above and a light-emitting device, in which the organic compound layer in the photoelectric conversion device further includes a second layer, and the second layer is located between the first layer and the second electrode and between the structure and the second electrode, and the second layer includes a third organic compound having electron-transporting properties; the light-emitting device includes a third electrode, a fourth electrode, a light-emitting layer located between the third electrode and the fourth electrode, and a third layer, and the third layer is located between the light-emitting layer and the fourth electrode, and the third layer includes a fourth organic compound having electron-transporting properties; and the third organic compound and the fourth organic compound are the same organic compound.

[0020] Another embodiment of the present invention is a light-emitting and receiving device having the above structure, in which the second electrode and the fourth electrode are formed using a continuous conductive material.

[0021] Another embodiment of the present invention is a light-emitting and receiving device in which the photoelectric conversion device and the light-emitting device have substantially the same configuration except for the configurations of the active layer and the light-emitting layer and the presence or absence of a structure. Note that "substantially the same" in this specification means that they are fabricated at the same time, and differences in the degree of in-plane distribution during fabrication are allowed.

[0022] In the drawings accompanying this specification, components are classified by function and shown as block diagrams that are independent of each other, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions. [Effects of the Invention]

[0023] According to one embodiment of the present invention, a photoelectric conversion device in which an increase in driving voltage is suppressed can be provided. According to another embodiment of the present invention, a light-emitting and receiving device in which an increase in power consumption is suppressed can be provided. According to another embodiment of the present invention, an electronic device in which an increase in power consumption is suppressed can be provided. Alternatively, according to one embodiment of the present invention, a novel photoelectric conversion device, a novel light-emitting and receiving device, or a novel electronic device can be provided.

[0024] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc. [Brief explanation of the drawings]

[0025] [Figure 1] 1(A) and 1(B) are diagrams illustrating the energy band of a photoelectric conversion device. [Figure 2] 2(A) and 2(B) are a micrograph and a cross-sectional TEM photograph of the photoelectric conversion device. [Figure 3] 3A to 3C illustrate a photoelectric conversion device according to one embodiment of the present invention. [Figure 4] 4A to 4C illustrate a light-emitting and receiving device according to one embodiment of the present invention. [Figure 5] 5A and 5B illustrate a light-emitting and receiving device according to one embodiment of the present invention. [Figure 6]6A to 6E are diagrams illustrating the configuration of a light-emitting device according to an embodiment. [Figure 7] 7A to 7D are diagrams illustrating a light emitting and receiving device according to an embodiment. [Figure 8] 8A to 8C are diagrams illustrating a method for manufacturing the light emitting and receiving device according to the embodiment. [Figure 9] 9A to 9C are diagrams illustrating a method for manufacturing the light emitting and receiving device according to the embodiment. [Figure 10] 10A to 10C are diagrams illustrating a method for manufacturing the light emitting and receiving device according to the embodiment. [Figure 11] 11(A) to 11(D) are diagrams illustrating a method for manufacturing the light emitting and receiving device according to the embodiment. [Figure 12] 12A to 12E are diagrams illustrating a method for manufacturing the light emitting and receiving device according to the embodiment. [Figure 13] 13A to 13F are diagrams illustrating a device and pixel arrangement according to an embodiment. [Figure 14] 14A to 14C are diagrams illustrating a pixel circuit according to an embodiment. [Figure 15] FIG. 15 is a diagram illustrating a light emitting device according to an embodiment. [Figure 16] 16A to 16E illustrate electronic devices according to embodiments. [Figure 17] 17A to 17E illustrate electronic devices according to embodiments. [Figure 18] 18(A) and 18(B) are diagrams illustrating an electronic device according to an embodiment. [Figure 19] 19(A) and 19(B) are diagrams for explaining the configurations of devices 1 to 8. FIG. [Figure 20] FIG. 20 is a diagram illustrating the voltage-current density characteristics of Devices 1 to 4 under light irradiation. [Figure 21]FIG. 21 is a graph illustrating the voltage-current density characteristics of Devices 1 to 4 in the dark state. [Figure 22] 22(A) to 22(D) are diagrams illustrating the voltage-current density characteristics of devices 10 to 13 when irradiated with light. [Figure 23] FIG. 23 shows cross-sectional SEM photographs and differential interference microscope photographs of devices 10A to 13A. [Figure 24] FIG. 24 is a diagram illustrating the voltage-current density characteristics of devices 20 to 22 when irradiated with light. [Figure 25] FIG. 25 is a diagram illustrating the voltage-current density characteristics of devices 20 to 22 in the dark state. [Figure 26] 26(A) to 26(C) are micrographs of devices 20 to 22. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0026] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0027] (Embodiment 1) A functional panel equipped with a light-emitting device and a photoelectric conversion device, as disclosed in Patent Document 1, can be manufactured simply and inexpensively by reducing the number of steps by using materials common to the light-emitting device and the photoelectric conversion device.

[0028] Examples of functional layers that can be shared between light-emitting devices and photovoltaic devices include a carrier (hole or electron) transport layer, a carrier (hole or electron) injection layer, etc. On the other hand, the light-emitting layer responsible for emitting light in light-emitting devices and the active layer responsible for charge separation in photovoltaic devices must be formed separately.

[0029] The functional panel equipped with the above-mentioned light-emitting device and photoelectric conversion device is almost always used as a display device. In other words, it is considered to be a display device with a built-in sensor, and the performance as a display device is the first priority. Therefore, when using the same material for the light-emitting device and the photoelectric conversion device, it is appropriate to select the material with the performance of the light-emitting device as the priority.

[0030] However, there is a problem in this case in that the driving voltage of a photoelectric conversion device that shares an electron transport layer selected according to the light-emitting device increases significantly due to the large difference between the lowest unoccupied molecular orbital (LUMO) level of the material contained in the light-emitting layer and the LUMO level of the acceptor material in the active layer.

[0031] Figure 1(A) shows an example of an energy band diagram of a photoelectric conversion device that shares a carrier transport material with a light-emitting device. The diagram shows a first electrode / hole injection layer 10, a hole transport layer 11, a donor 12, an acceptor 13, an electron transport layer 14a, a structure 14b, and an electron injection layer / second electrode 15. Because of the large energy barrier between the LUMO level of the acceptor material in the photoelectric conversion device and the LUMO level of the electron transport layer, the driving voltage of the photoelectric conversion device that shares the material of the electron transport layer with the light-emitting device increases.

[0032] Here, the inventors have discovered that by forming a structure having a convex shape on an organic compound layer (here, a photoelectric conversion layer including an active layer), it is possible to suppress an increase in the driving voltage of a photoelectric conversion device that shares a carrier transport material with a light-emitting device. In the present invention, the structure refers to an island-like object made of a material different from the photoelectric conversion layer that is provided on the photoelectric conversion layer. Having a convex shape means that the structure has a height relative to the surface of the photoelectric conversion layer, and the height of the structure does not necessarily have to be a single peak. In other words, the structure may have multiple peaks, or may have valleys, holes, or an uneven shape.

[0033] The structure has a width of 30 nm or more, preferably 50 nm or more, and 5000 nm or less, and a height of 30 nm or more, preferably 50 nm or more, and 5000 nm or less.

[0034] In this specification, the width of the structure is defined as the distance between two points on the outline of the structure at the widest position when the structure is viewed from a direction perpendicular to the surface of the electrode, or as the distance between the outlines of the structure on a line parallel to the electrode in a cross-sectional view of the structure at the widest position.

[0035] In this specification, the height of the structure is defined as the distance between the surface on which the structure is formed and the upper contour in a direction perpendicular to the surface of the electrode in a cross-sectional view of the structure.

[0036] The structure preferably has electron transport properties and preferably includes a first organic compound having electron transport properties. The LUMO level of the first organic compound is preferably equal to or higher than the LUMO level of the acceptor material (second organic compound) in the active layer and equal to or lower than the work function of the second electrode, and is preferably between −4.5 eV and −3.0 eV.

[0037] Furthermore, the LUMO level of the first organic compound is preferably lower than the LUMO level of the organic compound (third organic compound) having electron transport properties contained in the electron transport layer of the light-emitting device. This reduces the energy barrier when electrons flow from the active layer to the structure, thereby enabling a reduction in driving voltage. Furthermore, the difference between the LUMO levels of the first organic compound and the third organic compound is preferably 1 eV or less.

[0038] As the first organic compound contained in the structure, organic compounds represented by the following general formulas (G1) to (G4) can be used.

[0039] [ka]

[0040] However, in the organic compound represented by the general formula (G1), X 1 ~X 6 Each independently represents a carbon atom or a nitrogen atom. 1 ~R 12 each independently represents hydrogen, halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted halogenated alkoxy group having 1 to 6 carbon atoms, a cyano group, a nitro group, a carbonyl group, or a carboxylic acid group, and adjacent substituents may be bonded to each other to form a ring. 1 ~X 6 is nitrogen, the nitrogen does not have hydrogen or a substituent, so the corresponding R 1 , R 4 , R 5 , R 8 , R 9 , and R 12 is ignored. 1 ~R 12 is a carboxylic acid group, adjacent carboxylic acid groups may be dehydrated and condensed to form an acid anhydride ring.

[0041] [ka]

[0042] However, in the organic compound represented by the general formula (G2), X 1 ~X 12 Each independently represents a carbon atom or a nitrogen atom. 1 ~R 18 each independently represents hydrogen, halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted halogenated alkoxy group having 1 to 6 carbon atoms, a cyano group, a nitro group, a carbonyl group, or a carboxylic acid group, and adjacent substituents may be bonded to each other to form a ring. 1 ~X 12 is nitrogen, the nitrogen does not have hydrogen or a substituent, so the corresponding R 1 , R 2 , R 5 ~R 8 , R 11 ~R 14 , R 17 and R 18 is ignored. 1 ~R 18 is a carboxylic acid group, adjacent carboxylic acid groups may be dehydrated and condensed to form an acid anhydride ring.

[0043] [ka]

[0044] However, in the organic compound represented by the general formula (G3), X 1 ~X 10 Each independently represents a carbon atom or a nitrogen atom. 1 ~R 13 and R 18 ~R 20each independently represents hydrogen, halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted halogenated alkoxy group having 1 to 6 carbon atoms, a cyano group, a nitro group, a carbonyl group, or a carboxylic acid group, and adjacent substituents may be bonded to each other to form a ring. 1 ~X 10 When is nitrogen, it does not have hydrogen or a substituent, so the corresponding R 1 , R 2 , R 5 ~R 8 , R 11 ~R 13 , and R 18 is ignored. 1 ~R 13 and R 18 ~R 20 is a carboxylic acid group, adjacent carboxylic acid groups may be dehydrated and condensed to form an acid anhydride ring.

[0045] [ka]

[0046] However, in the organic compound represented by the general formula (G4), X 1 ~X 8 Each independently represents a carbon atom or a nitrogen atom. 1 ~R 7 , R 12 , R 13 and R 18 ~R 22 each independently represents hydrogen, halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 6 carbon atoms, a substituted or unsubstituted halogenated alkoxy group having 1 to 6 carbon atoms, a cyano group, a nitro group, a carbonyl group, or a carboxylic acid group, and adjacent substituents may be bonded to each other to form a ring. 1 ~X 8 When is nitrogen, it does not have hydrogen or a substituent, so the corresponding R1 , R 2 , R 5 ~R 7 , R 12 , R 13 , and R 18 is ignored. 1 ~R 7 , R 12 , R 13 and R 18 ~R 22 is a carboxylic acid group, adjacent carboxylic acid groups may be dehydrated and condensed to form an acid anhydride ring.

[0047] Among the organic compounds represented by the general formulas (G1) to (G4), it is preferable to use an organic compound having a dipole moment of less than 20 Debye, since the organic compound is likely to aggregate, facilitating the formation of a structure, and it is particularly preferable to use an organic compound having a dipole moment of less than 11 Debye. Among the organic compounds represented by the general formulas (G1) to (G4), it is preferable to use a compound whose glass transition point is not observed in DSC (Differential Scanning Calorimetry), since this facilitates the formation of a structure. If a glass transition point is observed, it is preferable that the temperature is less than 120°C, since this facilitates the formation of a structure. Furthermore, it is preferable that the thermal behavior of melting is not observed in TG-DTA (Thermogravimetry-Differential Thermal Analysis) at a temperature lower than the temperature at which a mass change occurs, and the mass change occurs by sublimation, since this facilitates the formation of the structure. TG-DTA is performed at a temperature lower than the temperature at which a mass change occurs, and the temperature is 1×10 -4 It is preferable to carry out the treatment under a pressure in the range of Pa, and more preferably, under reduced pressure (10 Pa or less), as in the case of forming a thin film.

[0048] Examples of organic compounds represented by the above general formula include organic compounds represented by the following structural formulas (1) to (40).

[0049] [ka]

[0050] [ka]

[0051] The organic compound represented by any of the general formulas (G1) to (G4) is deposited on the active layer by vacuum deposition to a thickness of 1 nm to 30 nm to form the above structure. Note that the materials used to form the above structure do not form flat films. Therefore, the amount of film deposition for the structure is determined using any material that forms a flat film as a reference material. For example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB) can be used as the reference material, and film deposition can be performed using the NPB calibration curve. By using the same calibration curve for each material, it is possible to control the amount of film deposition even if the exact amount is unknown. In this study, NPB was used as the reference material, and the above structure was formed by depositing an amount of the organic compound represented by any of the general formulas (G1) to (G4) corresponding to a film thickness of 1 nm to 30 nm. That is, the deposition of a film amount equivalent to a film thickness of 1 nm to 30 nm can be said to be, more accurately, deposition of a film amount equivalent to a film thickness of 1 nm to 30 nm of NPB.

[0052] The structure is preferably provided on an active layer. Since the characteristics deteriorate when the active layer contacts the second electrode, it is preferable to form a carrier transport layer (electron transport layer) common to the light-emitting device on the active layer and the structure after forming the structure.

[0053] By configuring the structure in this way, electrons reach the second electrode through the structure without passing through the electron transport layer, and as shown in Figure 1(B), the effect of the energy barrier can be reduced, thereby suppressing an increase in driving voltage.

[0054] Furthermore, when an electron transport layer is formed on the structure, the electron transport layer is discontinuous or extremely thin on the structure, and electrons generated in the active layer reach the second electrode through these portions. By discontinuing the electron transport layer or making it extremely thin, the structure and the second electrode come into contact, or an increase in driving voltage can be suppressed by the tunnel effect.

[0055] The above-mentioned structure is not formed in the light-emitting device, but only in the photoelectric conversion device. Furthermore, in the photoelectric conversion device, charge separation occurs when light strikes the device, and if there is a location with low resistance, charge is smoothly injected into the electrode from there. Therefore, one or more of the structure may be present in one photoelectric conversion device. Furthermore, the structure is formed at a density of 0.04 / μm in the region where the first electrode, active layer, and second electrode in the photoelectric conversion device overlap. 2 It is preferable that the density is 0.4 particles / μm or more. 2 It is more preferable that the density is equal to or greater than 1000 .mu.m.

[0056] The organic compounds represented by the general formulas (G1) to (G4) can be used to form the above structures simply by depositing them as films by vapor deposition. This is the result of aggregation due to crystallization of the organic compounds. Organic compounds typically used in organic semiconductor devices are highly amorphous, so they do not undergo such changes when deposited as films. In one embodiment of the present invention, the use of such materials reduces the driving voltage of a photoelectric conversion device.

[0057] 2 shows optical microscope photographs and cross-sectional TEM photographs taken with a transmission electron microscope (TEM) of a photoelectric conversion device of one embodiment of the present invention having such a structure (Device A) and a photoelectric conversion device not having such a structure (Device B). Device A and Device B have almost the same configuration, but differ only in the presence or absence of a structure (Device A forms an active layer, then deposits any of the materials represented by General Formulas (G1) to (G4) to a thickness equivalent to 15 nm to form a structure, and then forms an electron transport layer. Device B forms an electron transport layer immediately after forming the active layer).

[0058] Figure 2(A) shows an optical microscope photograph and a cross-sectional TEM image of device A. In Figure 2(A), the top photograph is an optical microscope photograph, the second photograph from the top is an enlarged cross-sectional TEM image of the area indicated by ab in the optical microscope photograph, and the bottom photograph is an enlarged cross-sectional TEM image of the area indicated by a box in the second-top cross-sectional TEM image. Figure 2(B) shows an optical microscope photograph and a cross-sectional TEM image of device B. In Figure 2(B), the top photograph is an optical microscope photograph, the second photograph from the top is an enlarged cross-sectional TEM image of the area indicated by cd in the optical microscope photograph, and the bottom photograph is an enlarged cross-sectional TEM image of the area indicated by a box in the second-top cross-sectional TEM image.

[0059] From Figures 2(A) and (B), it can be seen that the convex structure of the structure formed in Device A is sufficiently smaller than the electrode area and does not cause variations between pixels. In the bottom photograph of Figure 2(A), the structure appears to be formed on the second electrode, but this is because the depth direction is visible. Obtaining a cross section of the structure by capturing it as shown in *1 reveals that it is located below the second electrode on the first layer. Such a structure can be obtained by vapor-depositing any of the materials represented by the above general formulas (G1) to (G4), making it possible to reduce the driving voltage.

[0060] In this specification, hydrogen is also meant to include deuterium.

[0061] (Embodiment 2) In this embodiment, a photoelectric conversion device according to one embodiment of the present invention will be described.

[0062] The photoelectric conversion device of one embodiment of the present invention has a function of detecting light (hereinafter also referred to as a light-receiving function).

[0063] FIG. 3 shows a schematic cross-sectional view of a photoelectric conversion device 200 according to one embodiment of the present invention.

[0064] <Basic structure of a photoelectric conversion device> The basic structure of a photoelectric conversion device will be described. Fig. 3(A) shows a photoelectric conversion device 200 having a photoelectric conversion layer 203 including at least an active layer and a carrier transport layer between a pair of electrodes. Specifically, the photoelectric conversion layer 203 is sandwiched between a first electrode 201 and a second electrode 202. The photoelectric conversion layer 203 has at least an active layer, the structure described in Embodiment 1 on the active layer, and a carrier transport layer.

[0065] 3(B) shows an example of a stacked structure of the photoelectric conversion layer 203 of the photoelectric conversion device 200 of one embodiment of the present invention. The photoelectric conversion layer 203 has a structure in which a first carrier transport layer 212, an active layer 213, a structure 220, and a second carrier transport layer 214 are stacked in this order on the first electrode 201. That is, the structure 220 is located between the active layer 213 and the second carrier transport layer 214 and in contact with the active layer 213. That is, the structure 220 is located on the active layer 213 and in contact with the active layer 213, the second carrier transport layer 214, and the second electrode 202.

[0066] 3(C) shows another example of the stacked structure of the photoelectric conversion layer 203 of the photoelectric conversion device 200 of one embodiment of the present invention. The photoelectric conversion layer 203 has a structure in which a first carrier injection layer 211, a first carrier transport layer 212, an active layer 213, a structure 220, a second carrier transport layer 214, and a second carrier injection layer 215 are stacked in this order on the first electrode 201. That is, the structure 220 is located on the active layer 213 and is in contact with the active layer 213, the second carrier transport layer 214, and the second carrier injection layer 215.

[0067] By providing the structure 220 in the photoelectric conversion device 200 of one embodiment of the present invention, an increase in the driving voltage of the photoelectric conversion device 200 can be suppressed.

[0068] <<Specific structure of photoelectric conversion device>> Next, a specific structure of the photoelectric conversion device 200 of one embodiment of the present invention will be described with reference to FIG.

[0069] <First electrode and second electrode> The first electrode 201 and the second electrode 202 can be formed using a material that can be used for the first electrode 101 and the second electrode 102 of a light-emitting device, which will be described later in Embodiment 3.

[0070] For example, if the first electrode 201 is a reflective electrode and the second electrode 202 is a semi-transmissive and semi-reflective electrode, a micro-optical resonator (microcavity) structure can be formed, which intensifies light of a specific wavelength to be detected, resulting in a highly sensitive photoelectric conversion device.

[0071] <First Carrier Injection Layer> The first carrier injection layer 211 is a layer that injects holes from the photoelectric conversion layer 203 to the first electrode 201 and is a layer containing a material with high hole injection properties. Examples of the material with high hole injection properties include an aromatic amine compound and a composite material containing a hole transport material and an acceptor material (electron acceptor material).

[0072] The first carrier injection layer 211 can be formed using a material that can be used for the hole injection layer 111 of the light-emitting device, which will be described later in the third embodiment.

[0073] <First Carrier Transport Layer> The first carrier transport layer 212 is a layer that transports holes generated in the active layer 213 based on incident light to the first electrode 201, and is a layer that contains a hole transport material. -6 cm 2 A substance having a hole mobility of 1 / Vs or higher is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property. In this specification and the like, the first carrier transporting layer may also be referred to as a hole transporting layer.

[0074] As the hole transporting material, a π-electron rich heteroaromatic compound or an aromatic amine (a compound having an aromatic amine skeleton) can be used.

[0075] As the hole transporting material, a carbazole derivative, a thiophene derivative, or a furan derivative can be used.

[0076] Alternatively, the hole transporting material is an aromatic monoamine compound or a heteroaromatic monoamine compound, and includes at least one structure of aniline, biphenylamine, terphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, benzonaphthofuranylamine, fluorenylamine, or spirobifluorenylamine.

[0077] Alternatively, the hole transporting material is an aromatic monoamine compound or a heteroaromatic monoamine compound, and has two or more structures selected from aniline, biphenylamine, terphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, benzonaphthofuranylamine, fluorenylamine, and spirobifluorenylamine.

[0078] In addition, when the hole transport material is an aromatic monoamine compound or a heteroaromatic monoamine compound and has two or more structures selected from aniline, biphenylamine, terphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, benzonaphthofuranylamine, fluorenylamine, and spirobifluorenylamine, one nitrogen atom may be included in two or more structures. For example, in an aromatic monoamine compound, when fluorene and biphenyl are bonded to the nitrogen of the monoamine, the compound can be said to be an aromatic monoamine compound having a fluorenylamine structure and a biphenylamine structure.

[0079] The aniline, biphenylamine, terphenylamine, carbazolylamine, dibenzofuranylamine, dibenzothiophenylamine, benzonaphthofuranylamine, fluorenylamine, and spirobifluorenylamine described above as structures of the hole-transporting material may have a substituent. Examples of the substituent include a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, and a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms.

[0080] Alternatively, the hole transporting material is preferably a monoamine compound having a triarylamine structure (the aryl group in the triarylamine compound includes a heteroaryl group), for example, an organic compound represented by the following general formula (Gh-1):

[0081] [ka]

[0082] In the above general formula (Gh-1), Ar 11 ~Ar 13each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms.

[0083] Alternatively, the hole transporting material is an organic compound represented by the following general formula (Gh-2).

[0084] [ka]

[0085] In the above general formula (Gh-2), Ar 12 and Ar 13 each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms; R 511 ~R 520 each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms; R 519 and R 520 The substituents may be bonded to each other to form a ring.

[0086] Alternatively, the hole transporting material is an organic compound represented by the following general formula (Gh-3).

[0087] [ka]

[0088] In the above general formula (Gh-3), Ar 12 and Ar 13 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 4 to 30 carbon atoms; R 521 ~R 536each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms.

[0089] Alternatively, the hole transporting material is an organic compound represented by the following general formula (Gh-4).

[0090] [ka]

[0091] In the above general formula (Gh-4), Ar 13 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 4 to 30 carbon atoms, and R 511 ~R 520 and R 540 ~R 549 each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms; R 519 and R 520 The substituents may be bonded to each other to form a ring, and R 548 and R 549 The substituents may be bonded to each other to form a ring.

[0092] Alternatively, the hole transporting material is an organic compound represented by the following general formula (Gh-5).

[0093] [ka]

[0094] In the above general formula (Gh-5), Ar 13represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 4 to 30 carbon atoms, and R 511 ~R 520 and R 550 ~R 559 each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms; R 519 and R 520 The substituents may be bonded to each other to form a ring.

[0095] Alternatively, the hole transporting material is an organic compound represented by the following general formula (Gh-6).

[0096] [ka]

[0097] In the above general formula (Gh-6), R 560 ~R 574 each independently represents hydrogen, a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 4 to 30 carbon atoms.

[0098] R in the above general formula (Gh-2) 511 ~R 520 , R in the above general formula (Gh-3) 521 ~R 536 , R in the above general formula (Gh-4) 511 ~R 520 and R 540 ~R 549 , R in the above general formula (Gh-5) 511 ~R 520 and R 550 ~R 559 and R in the above general formula (Gh-6)560 ~R 574 represents, in addition to the above-mentioned substituents, a halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, a cyano group, or a substituted or unsubstituted alkoxy group having 1 to 13 carbon atoms.

[0099] R in the above general formula (Gh-2) 511 ~R 520 , R in the above general formula (Gh-3) 521 ~R 536 , R in the above general formula (Gh-4) 511 ~R 520 and R 540 ~R 549 , R in the above general formula (Gh-5) 511 ~R 520 and R 550 ~R 559 and R in the above general formula (Gh-6) 560 ~R 574 Specifically, it is preferable that R is a substituent represented by the following formulae (R-1) to (R-38) and (R-41) to (R-117), where * represents a bond.

[0100] In addition, Ar in the above general formula (Gh-1) 11 ~Ar 13 , Ar in the above general formulas (Gh-2) and (Gh-3) 12 and Ar 13 and Ar in the above general formulae (Gh-4) and (Gh-5). 13 Specifically, it is preferable that R is a substituent represented by the following formulae (R-41) to (R-117), where * represents a bond.

[0101] [ka]

[0102] [ka]

[0103] [ka]

[0104] [ka]

[0105] [ka]

[0106] Next, specific examples of the organic compounds (hole transporting materials) represented by the above general formulae (Gh-1) to (Gh-6) are shown below.

[0107] [ka]

[0108] [ka]

[0109] [ka]

[0110] [ka]

[0111] [ka]

[0112] [ka]

[0113] [ka]

[0114] [ka]

[0115] [ka]

[0116] [ka]

[0117] The organic compounds represented by the above structural formulas (201) to (302) are examples of the organic compounds (hole transport materials) represented by the above general formulas (Gh-1) to (Gh-6), and specific examples are not limited to these.

[0118] The first carrier transport layer 212 can also be formed using a material that can be used for the hole transport layer 112 of the light-emitting device, which will be described later in the third embodiment.

[0119] Furthermore, the first carrier transport layer 212 may not only be a single layer, but also have a structure in which two or more layers made of the above-mentioned materials are stacked.

[0120] In the photoelectric conversion device described in this embodiment, the active layer 213 can be formed using the same organic compound as that of the first carrier transport layer 212. Using the same organic compound for the first carrier transport layer 212 and the active layer 213 is more preferable because carriers can be efficiently transported from the first carrier transport layer 212 to the active layer 213.

[0121] <Active layer> The active layer 213 is a layer that generates carriers based on incident light and includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors that include organic compounds. In this embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer is shown. By using an organic semiconductor, the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), which is preferable because it allows the use of a common manufacturing device.

[0122] The active layer 213 contains at least a p-type semiconductor material and an n-type semiconductor material.

[0123] Examples of p-type semiconductor materials include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0124] Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0125] The p-type semiconductor material is preferably an organic compound represented by the following general formula (Ga-1).

[0126] [ka]

[0127] In the above general formula (Ga-1), R 21 ~R 30 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 13 carbon atoms, a cycloalkyl group having 3 to 13 carbon atoms, halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, a cyano group, a substituted or unsubstituted alkoxy group having 1 to 13 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms; and m represents an integer of 2 to 5.

[0128] In the above general formula (Ga-1), R 21 ~R 30 is preferably a substituent represented by the following formula (Ra-1) to formula (Ra-77), in which * represents a bond.

[0129] [ka]

[0130] [ka]

[0131] [ka]

[0132] Next, specific examples of the p-type semiconductor material represented by the above general formula (Ga-1) are shown below.

[0133] [ka]

[0134] [ka]

[0135] The organic compounds represented by the structural formulas (101) to (116) above are examples of the organic compounds represented by the general formula (Ga-1) above, but specific examples of p-type semiconductor materials are not limited to these.

[0136] As n-type semiconductor materials, fullerenes (e.g., C 60 , C 70 Examples of suitable materials include electron-accepting organic semiconductor materials such as fullerene derivatives, etc. Fullerenes have a soccer ball-like shape, which is energetically stable. Fullerenes have deep (low) highest occupied molecular orbital (HOMO) and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting (acceptor) properties. Normally, when the π-electron conjugation (resonance) spreads on a plane, as in benzene, the electron-donating (donor) properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the wide spread π-electron conjugation. High electron-accepting properties allow charge separation to occur quickly and efficiently, making them useful as photoelectric conversion devices. C 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region compared to [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC71BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC61BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviation: ICBA).

[0137] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0138] The n-type semiconductor material is preferably an organic compound represented by any one of the following general formulas (Gb-1) to (Gb-3).

[0139] [ka]

[0140] In the above general formulae (Gb-1) to (Gb-3), X 30 ~X 45 each independently represents oxygen or sulfur, and n 10 and n 11 each independently represents an integer of 0 to 4, and n 20 〜n 26 each independently represents an integer of 0 to 3, and n 24 〜n 26 at least one of represents an integer of 1 to 3; 100 ~R 117 each independently represents hydrogen, a cyano group, a substituted or unsubstituted alkyl group having 1 to 13 carbon atoms, a cycloalkyl group having 3 to 13 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 13 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, or a halogen; R 300 ~R 317each independently represents hydrogen, a cyano group, fluorine, chlorine, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 13 carbon atoms.

[0141] In the above general formulae (Gb-1) to (Gb-3), R 100 ~R 117 is preferably a substituent represented by the following formulae (Rb-1) to (Rb-79) and (R-41) to (R-117), where * represents a bond.

[0142] In addition, in the above general formulas (Gb-1) to (Gb-3), R 300 ~R 317 is preferably a substituent represented by the following formulae (Rb-1) to (Rb-4), (Rb-7), and (Rb-33) to (Rb-72), where * represents a bond.

[0143] [ka]

[0144] [ka]

[0145] [ka]

[0146] [ka]

[0147] [ka]

[0148] [ka]

[0149] [ka]

[0150] [ka]

[0151] [ka]

[0152] [ka]

[0153] [ka]

[0154] [ka]

[0155] [ka]

[0156] Next, specific examples of the n-type semiconductor materials represented by the above general formulas (Gb-1) to (Gb-3) are shown below.

[0157] [ka]

[0158] The organic compounds represented by the above structural formulas (300) to (312) are examples of the organic compounds (n-type semiconductor materials) represented by the above general formulas (Gb-1) to (Gb-3), but specific examples are not limited to these.

[0159] Furthermore, an organic compound represented by the following general formula (Gc-1) may be used as the n-type semiconductor material.

[0160] [ka]

[0161] In the above general formula (Gc-1), R 40 and R 41 each independently represents hydrogen, a substituted or unsubstituted linear alkyl group having 1 to 13 carbon atoms, a branched alkyl group having 3 to 13 carbon atoms, a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, or a substituted or unsubstituted aromatic alkyl group having 6 to 13 carbon atoms; R 42 ~R 49 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 13 carbon atoms, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 13 carbon atoms, or halogen.

[0162] In the above general formula (Gc-1), R 40 and R 41 are each independently preferably a chain alkyl group having 2 to 12 carbon atoms. Also, are each independently more preferably a branched alkyl group, which can increase solubility.

[0163] Next, specific examples of the n-type semiconductor material represented by the above general formula (Gc-1) are shown below.

[0164] [ka]

[0165] The organic compounds represented by the structural formulas (400) to (403) are examples of the organic compounds (n-type semiconductor materials) represented by the general formula (Gc-1), and specific examples are not limited to these.

[0166] Moreover, the active layer 213 is preferably a laminated film of a first layer having a p-type semiconductor material and a second layer having an n-type semiconductor material.

[0167] In the light-emitting devices having the above configurations, the active layer 213 is preferably a mixed film containing a p-type semiconductor material and an n-type semiconductor material.

[0168] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material, and the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0169] Note that a spherical fullerene may be used as the electron-accepting organic semiconductor material, and a planar organic semiconductor material may be used as the electron-donating organic semiconductor material. Molecules with similar shapes tend to aggregate together, and when molecules of the same type aggregate, the energy levels of their molecular orbitals become close, which can improve carrier transport properties.

[0170] <Structure> The structure 220 receives electrons from the active layer 213 and provides electrons to the second carrier transport layer 214. By providing the structure 220 in the photoelectric conversion device 200, it is possible to suppress an increase in the driving voltage of the photoelectric conversion device 200. The configuration and effects of the structure 220 have been described in detail in the first embodiment, so repeated description will be omitted.

[0171] <Second Carrier Transport Layer> The second carrier transport layer 214 is a layer that transports electrons provided from the structure 220 to the second electrode 202 and is a layer that contains an electron transporting material. -6 cm 2 A substance having an electron mobility of 1 / Vs or higher is preferred. Note that other substances can also be used as long as they have a higher electron transporting property than hole transporting property. In this specification and the like, the second carrier transporting layer may also be referred to as an electron transporting layer.

[0172] As the electron transporting material, a π-electron deficient heteroaromatic compound can be used.

[0173] In addition, as the electron transporting material, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, and the like, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds can be used.

[0174] Alternatively, the electron transporting material is preferably a compound having a triazine ring.

[0175] Alternatively, the electron transporting material is preferably an organic compound represented by the following general formula (Ge-1).

[0176] [ka]

[0177] In the above general formula (Ge-1), Ar 1 ~Ar 3 each independently represents hydrogen, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms; X 1 and X 2 each independently represents carbon or nitrogen, and X 1 and X 2When either one or both of the above is carbon, the carbon is bonded to hydrogen, or a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having from 2 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms.

[0178] Alternatively, the electron transporting material is an organic compound represented by the following general formula (Ge-2).

[0179] [ka]

[0180] In the above general formula (Ge-2), Ar 1 ~Ar 3 each independently represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms; X 2 represents carbon or nitrogen, and X 2 When is a carbon, the carbon is bonded to hydrogen, or a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, a substituted or unsubstituted heteroaryl group having from 2 to 30 carbon atoms, a substituted or unsubstituted alkyl group having from 1 to 20 carbon atoms, or a substituted or unsubstituted cycloalkyl group having from 1 to 20 carbon atoms.

[0181] Alternatively, the electron transporting material is an organic compound represented by the following general formula (Ge-3).

[0182] [ka]

[0183] In the above general formula (Ge-3), Ar 1 ~Ar 3 each independently represents a substituted or unsubstituted aryl group having from 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having from 2 to 30 carbon atoms.

[0184] Alternatively, the electron transporting material is an organic compound represented by the following general formula (Ge-4).

[0185] [ka]

[0186] In the above general formula (Ge-4), Ar 3 represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms; R 1 ~R 10 each independently represents hydrogen, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 carbon atoms.

[0187] R in the above general formula (Ge-4) 1 ~R 10 represents, in addition to the above-mentioned substituents, a halogen, a substituted or unsubstituted halogenated alkyl group having 1 to 13 carbon atoms, a cyano group, or a substituted or unsubstituted alkoxy group having 1 to 13 carbon atoms.

[0188] R in the above general formula (Ge-4) 1 ~R 10 is preferably a substituent represented by the following formulas (R-1) to (R-38), a substituent represented by the following formulas (R-41) to (R-116), and a substituent represented by the following formulas (R-118) to (R-131).

[0189] In addition, Ar in the above general formulas (Ge-1) to (Ge-3) 1 ~Ar 3 and Ar in the above general formula (Ge-4) 3 is preferably a substituent represented by the following formulae (R-41) to (R-116) and a substituent represented by the following formulae (R-118) to (R-131).

[0190] [ka]

[0191] [ka]

[0192] [ka]

[0193] [ka]

[0194] [ka]

[0195] [ka]

[0196] Next, specific examples of the electron transporting material having the above-mentioned structures will be shown below.

[0197] [ka]

[0198] [ka]

[0199] The organic compounds represented by the above structural formulas (500) to (524) are examples of the organic compounds represented by the above general formulas (Ge-1) to (Ge-4), but specific examples of the electron transport material are not limited to these.

[0200] In addition, organic compounds represented by the following structural formulas (600) to (622) can be used as the electron transporting material.

[0201] [ka]

[0202] [ka]

[0203] The second carrier transport layer 214 can also be formed using a material that can be used for the electron transport layer 114 of the light-emitting device, which will be described later in Embodiment 3.

[0204] The second carrier transport layer 214 may be not only a single layer, but also a laminated structure of two or more layers made of the above-mentioned materials.

[0205] <Second Carrier Injection Layer> The second carrier injection layer 215 is a layer for increasing the efficiency of electron injection from the photoelectric conversion layer 203 to the second electrode 202, and is a layer containing a material with high electron injection properties. As the material with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron donor material) can also be used.

[0206] The second carrier injection layer 215 can be formed using a material that can be used for the electron injection layer 115 of the light-emitting device, which will be described later in Embodiment 3.

[0207] Furthermore, by providing a charge generation layer between two photoelectric conversion layers 203, a structure in which a plurality of photoelectric conversion layers are stacked between a pair of electrodes (also referred to as a tandem structure) can be obtained. Furthermore, by providing a charge generation layer between different photoelectric conversion layers, a stack structure of three or more photoelectric conversion layers can be obtained. The charge generation layer can be formed using a material that can be used for the charge generation layer 106 of the light-emitting device, which will be described later in Embodiment 3.

[0208] The layers constituting the photoelectric conversion layer 203 of the photoelectric conversion device shown in this embodiment (first carrier injection layer 211, first carrier transport layer 212, active layer 213, second carrier transport layer 214, second carrier injection layer 215) are not limited to the materials shown in this embodiment, and other materials can also be used in combination as long as they can fulfill the functions of each layer.

[0209] In this specification and the like, the terms "layer" and "film" can be used interchangeably as appropriate.

[0210] Note that the photoelectric conversion device of one embodiment of the present invention has a function of detecting visible light. The photoelectric conversion device of one embodiment of the present invention is sensitive to visible light. The photoelectric conversion device of one embodiment of the present invention more preferably has a function of detecting visible light and infrared light. The photoelectric conversion device of one embodiment of the present invention is preferably sensitive to visible light and infrared light.

[0211] In this specification, the blue (B) wavelength range is defined as 400 nm or more and less than 490 nm, and blue (B) light has at least one emission spectrum peak in this wavelength range. The green (G) wavelength range is defined as 490 nm or more and less than 580 nm, and green (G) light has at least one emission spectrum peak in this wavelength range. The red (R) wavelength range is defined as 580 nm or more and less than 700 nm, and red (R) light has at least one emission spectrum peak in this wavelength range. In this specification, the visible light wavelength range is defined as 400 nm or more and less than 700 nm, and visible light has at least one emission spectrum peak in this wavelength range. The infrared (IR) wavelength range is defined as 700 nm or more and less than 900 nm, and infrared (IR) light has at least one emission spectrum peak in this wavelength range.

[0212] The above-described photoelectric conversion device of one embodiment of the present invention can be used in a display device using an organic EL device. In other words, the photoelectric conversion device of one embodiment of the present invention can be built into a display device using an organic EL device. As an example, FIG. 4A shows a schematic cross-sectional view of a light-emitting and receiving device 810 in which a light-emitting device 805a and a photoelectric conversion device 805b are formed over the same substrate.

[0213] The light emitting and receiving device 810 has a light emitting device 805a and a photoelectric conversion device 805b, and therefore has one or both of an imaging function and a sensing function in addition to a function of displaying an image.

[0214] The light-emitting device 805a has a function of emitting light (hereinafter also referred to as a light-emitting function). The light-emitting device 805a has an electrode 801a, an EL layer 803a, and an electrode 802. The EL layer 803a sandwiched between the electrode 801a and the electrode 802 has at least a light-emitting layer. The light-emitting layer contains a light-emitting substance. When a voltage is applied between the electrode 801a and the electrode 802, light is emitted from the EL layer 803a. The EL layer 803a may have various layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a carrier (hole or electron) blocking layer, and a charge generation layer in addition to the light-emitting layer. The configuration of a light-emitting device, which is an organic EL device described later in Embodiment 3, can be applied to the light-emitting device 805a.

[0215] The photoelectric conversion device 805b has a function of detecting light (hereinafter also referred to as a light receiving function). The photoelectric conversion device 805b has an electrode 801b, a photoelectric conversion layer 803b, and an electrode 802. The photoelectric conversion layer 803b sandwiched between the electrode 801b and the electrode 802 has at least an active layer. The photoelectric conversion device 805b functions as a photoelectric conversion device, and can generate charges by light incident on the photoelectric conversion layer 803b and extract them as a current. At this time, a voltage may be applied between the electrode 801b and the electrode 802. The amount of generated charges is determined based on the amount of light incident on the photoelectric conversion layer 803b. The configuration of the photoelectric conversion device 200 described above can be applied to the photoelectric conversion device 805b.

[0216] The photoelectric conversion device 805b can be easily made thin, lightweight, and large-area, and has a high degree of freedom in shape and design, making it applicable to various display devices. Furthermore, the EL layer 803a of the light-emitting device 805a and the photoelectric conversion layer 803b of the photoelectric conversion device 805b can be formed by the same method (e.g., vacuum deposition), which is preferable because a common manufacturing apparatus can be used.

[0217] The electrode 801a and the electrode 801b are provided on the same surface. Fig. 4A shows a structure in which the electrode 801a and the electrode 801b are provided on a substrate 800. Note that the electrode 801a and the electrode 801b can be formed by, for example, processing a conductive film formed on the substrate 800 into an island shape. That is, the electrode 801a and the electrode 801b can be formed through the same process.

[0218] A substrate having heat resistance sufficient to withstand the formation of the light-emitting device 805a and the photoelectric conversion device 805b can be used as the substrate 800. When an insulating substrate is used as the substrate 800, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used. In addition, a semiconductor substrate such as a single-crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate can be used.

[0219] In particular, it is preferable to use a substrate in which a semiconductor circuit including semiconductor elements such as transistors is formed on the aforementioned insulating substrate or semiconductor substrate as the substrate 800. The semiconductor circuit preferably constitutes, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, an arithmetic circuit, a memory circuit, etc. may also be configured.

[0220] The electrode 802 is an electrode made of a layer common to the light-emitting device 805a and the photoelectric conversion device 805b. Of these electrodes, a conductive film that transmits visible light and infrared light is used for the electrode on the light-emitting or light-incident side. It is preferable to use a conductive film that reflects visible light and infrared light for the electrode on the light-non-emitting or light-incident side.

[0221] The electrode 802 in the display device which is one embodiment of the present invention functions as one electrode of each of the light-emitting device 805a and the photoelectric conversion device 805b.

[0222] 4(B) shows a case where electrode 801a of light-emitting device 805a has a higher potential than electrode 802. In this case, electrode 801a functions as the anode of light-emitting device 805a, and electrode 802 functions as the cathode. Electrode 801b of photoelectric conversion device 805b has a lower potential than electrode 802. In FIG. 4(B), to make it easier to understand the direction of current flow, the circuit symbol for a light-emitting diode is shown on the left side of light-emitting device 805a, and the circuit symbol for a photodiode is shown on the right side of photoelectric conversion device 805b. The direction of carrier (electron and hole) flow is also indicated by arrows in each device.

[0223] 4(C) shows a case where electrode 801a of light-emitting device 805a has a lower potential than electrode 802. In this case, electrode 801a functions as the cathode of light-emitting device 805a, and electrode 802 functions as the anode. Electrode 801b of photoelectric conversion device 805b has a lower potential than electrode 802 and a higher potential than electrode 801a. In FIG. 4(C), to make it easier to understand the direction of current flow, the circuit symbol for a light-emitting diode is shown to the left of light-emitting device 805a, and the circuit symbol for a photodiode is shown to the right of photoelectric conversion device 805b. The direction of carrier (electron and hole) flow is also indicated by arrows in each device.

[0224] FIG. 5A shows a light-receiving and light-emitting device 810A, which is a modification of the light-receiving and light-emitting device 810. The light-receiving and light-emitting device 810A differs from the light-receiving and light-emitting device 810 in that it includes a common layer 806 and a common layer 807. In the light-emitting device 805a, the common layer 806 and the common layer 807 function as part of the EL layer 803a. In the photoelectric conversion device 805b, the common layer 806 and the common layer 807 function as part of the photoelectric conversion layer 803b. The common layer 806 includes, for example, a hole injection layer and a hole transport layer. The common layer 807 includes, for example, an electron transport layer and an electron injection layer. The photoelectric conversion device 805b including the common layer 807 has a structure between the active layer and the common layer as in Embodiment 1, thereby suppressing an increase in driving voltage and providing a photoelectric conversion device with excellent characteristics.

[0225] By using a configuration including the common layer 806 and the common layer 807, it is possible to incorporate a light receiving element without significantly increasing the number of times of coating, and it is possible to manufacture the light receiving and emitting device 810A with high throughput.

[0226] FIG. 5B shows a light-receiving and light-emitting device 810B, which is a modification of the light-receiving and light-emitting device 810. The light-receiving and light-emitting device 810B differs from the light-receiving and light-emitting device 810 in that the EL layer 803a includes layers 806a and 807a, and the photoelectric conversion layer 803b includes layers 806b and 807b. The layers 806a and 806b are made of different materials and include, for example, a hole injection layer and a hole transport layer. The layers 806a and 806b may be made of the same material. The layers 807a and 807b are made of different materials and include, for example, an electron transport layer and an electron injection layer. The layers 807a and 807b may be made of the same material. The photoelectric conversion device 805b, in which the layers 807a and 807b are formed from a common material, can suppress an increase in driving voltage by having a structure between the active layer and the common layer as in embodiment 1, thereby making it a photoelectric conversion device with good characteristics.

[0227] By selecting the optimum material for constituting the light-emitting device 805a for the layers 806a and 807a, and the optimum material for constituting the photoelectric conversion device 805b for the layers 806b and 807b, the performance of each of the light-emitting device 805a and the photoelectric conversion device 805b in the light-receiving and light-emitting device 810B can be improved.

[0228] The resolution of the photoelectric conversion device 805b is 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less. In particular, the photoelectric conversion device 805b can be suitably used for fingerprint imaging by arranging it with a resolution of 200 ppi or more and 600 ppi or less, preferably 300 ppi or more and 600 ppi or less. When fingerprint authentication is performed using the light receiving and emitting device 810, increasing the resolution of the photoelectric conversion device 805b can, for example, extract fingerprint minutiae with high accuracy, thereby improving the accuracy of fingerprint authentication. Furthermore, a resolution of 500 ppi or more is preferable because it complies with standards such as those of the National Institute of Standards and Technology (NIST). Assuming that the resolution of the photoelectric conversion device is 500 ppi, the size of each pixel is 50.8 μm, which is sufficient resolution to capture the width of a fingerprint (typically 300 μm to 500 μm).

[0229] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0230] (Embodiment 3) In this embodiment mode, other structures of the light-emitting device shown in Embodiment Mode 2 will be described with reference to FIGS. 6A to 6E.

[0231] <Basic structure of light-emitting devices> The basic structure of a light-emitting device will be described. Figure 6(A) shows a light-emitting device having an EL layer including a light-emitting layer between a pair of electrodes. Specifically, the device has a structure in which an EL layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0232] 6(B) shows a light-emitting device with a stacked structure (tandem structure) having multiple (two in FIG. 6(B)) EL layers (103a, 103b) between a pair of electrodes, with a charge generation layer 106 between the EL layers. A light-emitting device with a tandem structure can be realized as a light-emitting device that can be driven at a low voltage and consumes low power.

[0233] The charge generation layer 106 has a function of injecting electrons into one EL layer (103a or 103b) and injecting holes into the other EL layer (103b or 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in Figure 6(B), when a voltage is applied to the first electrode 101 so that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the EL layer 103a and holes are injected into the EL layer 103b.

[0234] From the viewpoint of light extraction efficiency, the charge generation layer 106 preferably has transparency to visible light (specifically, the transmittance of the charge generation layer 106 to visible light is 40% or more). The charge generation layer 106 functions even if it has lower conductivity than the first electrode 101 and the second electrode 102.

[0235] FIG. 6C shows a stacked structure of the EL layer 103 of the light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. The EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked over the first electrode 101. The light-emitting layer 113 may have a stacked structure of a plurality of light-emitting layers that emit different colors. For example, a light-emitting layer containing a light-emitting substance that emits red light, a light-emitting layer containing a light-emitting substance that emits green light, and a light-emitting layer containing a light-emitting substance that emits blue light may be stacked, or may have a structure in which the layers are stacked with a layer containing a carrier-transporting material interposed therebetween. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow light and a light-emitting layer containing a light-emitting substance that emits blue light may be combined. However, the stacked structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which multiple light-emitting layers emitting the same light color are stacked. For example, a first light-emitting layer containing a blue light-emitting substance and a second light-emitting layer containing a blue light-emitting substance are stacked, or a layer containing a carrier-transporting material is interposed between the layers. A structure in which multiple light-emitting layers emitting the same light color are stacked may have higher reliability than a single-layer structure. Even in a tandem structure such as that shown in FIG. 6B, in which multiple EL layers are provided, each EL layer is stacked in order from the anode side as described above. When the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the EL layer 103 is reversed. Specifically, the structure is such that 111 on the first electrode 101, which is a cathode, is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0236] The light-emitting layers 113 included in the EL layers (103, 103a, 103b) each contain a light-emitting substance or a combination of multiple substances, and can be configured to emit fluorescent or phosphorescent light of a desired emission color. The light-emitting layer 113 may also have a stacked structure that emits different light colors. In this case, different materials may be used for the light-emitting substance and other substances used in each stacked light-emitting layer. Alternatively, a structure in which different light-emitting colors are emitted from the multiple EL layers (103a, 103b) shown in Figure 6(B) may also be used. In this case, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0237] In addition, in a light-emitting device according to one embodiment of the present invention, for example, the first electrode 101 shown in FIG. 6(C) may be a reflective electrode, the second electrode 102 may be a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure may be formed. This allows light emission from the light-emitting layer 113 included in the EL layer 103 to resonate between the two electrodes, thereby enhancing the light emission from the second electrode 102.

[0238] When the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is a natural number) or close to it, for the wavelength λ of light obtained from the light-emitting layer 113.

[0239] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to be (2m'+1)λ / 4 (where m' is a natural number) or close to that. Note that the light-emitting region here refers to the recombination region of holes and electrons in the light-emitting layer 113.

[0240] By performing such optical adjustment, the spectrum of the specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.

[0241] In the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective regions of the first electrode 101 and the second electrode 102, the above-described effect can be sufficiently achieved by assuming any position of the first electrode 101 and the second electrode 102 as the reflective region. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which desired light is obtained can be strictly defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained, the above-described effect can be sufficiently achieved by assuming any position of the first electrode 101 as the reflective region and any position of the light-emitting layer from which desired light is obtained as the light-emitting region.

[0242] The light-emitting device shown in Figure 6(D) is a light-emitting device with a tandem structure and a microcavity structure, which allows light of different wavelengths (monochromatic light) to be extracted from each EL layer (103a, 103b). This eliminates the need for separate coloring (e.g., RGB) to obtain different emitted colors. This makes it easy to achieve high resolution. It can also be combined with a colored layer (color filter). Furthermore, it is possible to increase the emission intensity of a specific wavelength in the front direction, thereby reducing power consumption.

[0243] The light-emitting device shown in FIG. 6(E) is an example of the tandem-structure light-emitting device shown in FIG. 6(B). As shown in the figure, the light-emitting device has a structure in which three EL layers (103a, 103b, 103c) are stacked with charge-generating layers (106a, 106b) sandwiched between them. Each of the three EL layers (103a, 103b, 103c) has a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be red, green, or yellow, and the light-emitting layer 113c can be blue. Alternatively, the light-emitting layer 113a can be red, the light-emitting layer 113b can be blue, green, or yellow, and the light-emitting layer 113c can be red.

[0244] In the light-emitting device according to one embodiment of the present invention, at least one of the first electrode 101 and the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transmitting / semi-reflective electrode). When the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. In addition, when the semi-transmitting / semi-reflective electrode is used, the visible light reflectance of the semi-transmitting / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 -2 It is preferable to set it to Ωcm or less.

[0245] In the above-described light-emitting device according to one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (a reflective electrode), the reflectivity of the reflective electrode for visible light is set to 40% to 100%, preferably 70% to 100%. -2 It is preferable to set it to Ωcm or less.

[0246] <Specific structure of the light-emitting device> Next, a specific structure of a light-emitting device according to one embodiment of the present invention will be described. Here, a description will be given using FIG. 6D, which has a tandem structure. The single-structure light-emitting devices shown in FIGS. 6A and 6C also have the same EL layer structure. When the light-emitting device shown in FIG. 6D has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive and semi-reflective electrode. Therefore, a single or multiple desired electrode materials can be used to form a single layer or a stacked layer. The second electrode 102 is formed by selecting a material in the same manner as described above after the EL layer 103b is formed.

[0247] <First electrode and second electrode> The materials forming the first electrode 101 and the second electrode 102 can be any combination of the following materials, as long as they fulfill the functions of both electrodes described above. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used. Specific examples include In-Sn oxide (also known as ITO), In-Si-Sn oxide (also known as ITSO), In-Zn oxide, and In-W-Zn oxide. Other metals that can be used include aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing any combination of these metals. Other examples that can be used include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing appropriate combinations of these elements, as well as graphene.

[0248] 6(D), when the first electrode 101 is an anode, the hole injection layer 111a and the hole transport layer 112a of the EL layer 103a are sequentially laminated by vacuum deposition on the first electrode 101. After the EL layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the EL layer 103b are similarly sequentially laminated on the charge generation layer 106.

[0249] <Hole injection layer> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101, which is an anode, or the charge generation layer (106, 106a, 106b) to the EL layer (103, 103a, 103b), and is a layer that contains an organic acceptor material or a material with high hole injection properties.

[0250] An organic acceptor material is a material that can generate holes in an organic compound by causing charge separation between the organic acceptor material and another organic compound whose LUMO level and HOMO level are close to each other. Therefore, compounds having electron-withdrawing groups (halogen groups or cyano groups), such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives, can be used as organic acceptor materials. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used. Among organic acceptor materials, compounds such as HAT-CN, in which electron-withdrawing groups are bonded to fused aromatic rings containing multiple heteroatoms, are particularly suitable because of their high acceptability and thermal stability. Radialene derivatives with electron-withdrawing groups (especially halogen groups such as fluoro groups or cyano groups) are also preferred because of their extremely high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile].

[0251] In addition, as a material with high hole injection properties, oxides of metals belonging to Groups 4 to 8 of the periodic table (e.g., transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide) can be used. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle. Other examples include phthalocyanine-based compounds such as phthalocyanine (abbreviated as HPc) and copper phthalocyanine (abbreviated as CuPc).

[0252] In addition to the above materials, we also have low molecular weight compounds such as 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), and 1,3,5-tris[N Aromatic amine compounds such as -(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

[0253] In addition, polymeric compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD) can be used. Alternatively, polymeric compounds with added acids, such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviation: PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviation: PAni / PSS), can also be used.

[0254] Furthermore, a mixed material containing a hole transport material and the above-mentioned organic acceptor material (electron accepting material) can also be used as the material with high hole injection properties. In this case, electrons are extracted from the hole transport material by the organic acceptor material, generating holes in the hole injection layer 111, and the holes are injected into the light-emitting layer 113 via the hole transport layer 112. Note that the hole injection layer 111 may be formed as a single layer made of a mixed material containing the hole transport material and the organic acceptor material (electron accepting material), or may be formed by laminating the hole transport material and the organic acceptor material (electron accepting material) as separate layers.

[0255] As for hole transporting materials, the hole mobility at a square root of the electric field strength [V / cm] of 600 is 1×10 -6 cm 2 A substance having a hole mobility of / Vs or more is preferred. Note that other substances can also be used as long as they have a higher hole transporting property than electron transporting property.

[0256] As the hole transporting material, a material with high hole transporting properties, such as a compound having a π-electron-rich heteroaromatic ring (for example, a carbazole derivative, a furan derivative, or a thiophene derivative) or an aromatic amine (an organic compound having an aromatic amine skeleton), is preferred.

[0257] Examples of the carbazole derivatives (organic compounds having a carbazole ring) include bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives), aromatic amines having a carbazolyl group, and the like.

[0258] Specific examples of the bicarbazole derivatives (for example, 3,3′-bicarbazole derivatives) include 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9′-bis(biphenyl-4-yl)-3,3′-bi-9H-carbazole (abbreviation: BisBPCz), 9,9′-bis(1,1′-biphenyl-3-yl)-3,3′-bi-9H-carbazole (abbreviation: BismBPCz), 9-(1,1′-biphenyl-3-yl)-9′-(1,1′-biphenyl-4-yl)-9H,9′H-3,3′-bicarbazole (abbreviation: mBPCCBP), and 9-(2-naphthyl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: βNCCP).

[0259] Specific examples of the aromatic amine having a carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)] )phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-diphenyl Methyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-Bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviated as PCzPCN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviated as PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviated as PCzTPN2), 2-[N-(9-phenylcarbazol-3-yl)-N-phenylamino] ]spiro-9,9'-bifluorene (abbreviation: PCASF), N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4',4''-tris(carbazol- Examples include N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: PCAFLP(2)), and N-(9,9-diphenyl-9H-fluoren-2-yl)-N,9-diphenyl-9H-carbazol-2-amine (abbreviation: PCAFLP(2)-02).

[0260] In addition to the above, examples of the carbazole derivatives include 3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPPn), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

[0261] Specific examples of the furan derivatives (organic compounds having a furan ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II).

[0262] Specific examples of the thiophene derivatives (organic compounds having a thiophene ring) include organic compounds having a thiophene ring, such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0263] Specific examples of the aromatic amine include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), and 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP). , 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(4-biphenyl)-N-{4-[(9-phenyl)-9H-fluoren-9-yl]-phenyl}-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: FBiFLP), N,N,N',N'-tetrakis(4-biphenyl)-1,1-biphenyl-4,4'-diamine (abbreviation: BBA2BP), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4- Amine (abbreviation: SF4FAF), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9'-bifluorene (abbreviation: DPASF) , 2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluorene (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: m-MTDATA), N,N'-di(p-tolyl)-N,N'-Diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4) ), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-Diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine phenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tris( 1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: YGTBiβNB), bis-biphenyl-4'-(carbazol-9-yl)biphenylamine (abbreviation: YGBBi1BP), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis([1,1'-biphenyl]-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as BBASF), N,N-bis([1,1'-biphenyl]-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviated as BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviated as oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluorene-2- N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and the like are mentioned.

[0264] Other examples of hole-transporting materials that can be used include polymeric compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD). Alternatively, polymeric compounds containing added acids, such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (abbreviation: PEDOT / PSS) and polyaniline / poly(styrenesulfonic acid) (abbreviation: PAni / PSS), can also be used.

[0265] However, the hole transporting material is not limited to the above, and one or more of various known materials may be used as the hole transporting material.

[0266] The hole injection layers (111, 111a, 111b) can be formed using various known film formation methods, for example, vacuum deposition.

[0267] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers that transport holes injected from the first electrode 101 by the hole injection layers (111, 111a, 111b) to the light-emitting layers (113, 113a, 113b). The hole transport layers (112, 112a, 112b) are layers that contain a hole transport material. Therefore, the hole transport layers (112, 112a, 112b) can use the same hole transport material that can be used for the hole injection layers (111, 111a, 111b).

[0268] In the light-emitting device of one embodiment of the present invention, the light-emitting layers (113, 113a, 113b) can be formed using the same organic compound as that used in the hole-transport layers (112, 112a, 112b). It is more preferable to use the same organic compound in the hole-transport layers (112, 112a, 112b) and the light-emitting layers (113, 113a, 113b) because holes can be efficiently transported from the hole-transport layers (112, 112a, 112b) to the light-emitting layers (113, 113a, 113b).

[0269] <Light-emitting layer> The light-emitting layers (113, 113a, 113b, 113c) are layers containing light-emitting substances. Light-emitting substances that can be used for the light-emitting layers (113, 113a, 113b, 113c) include substances that emit light of colors such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When multiple light-emitting layers are provided, different light-emitting substances can be used for each light-emitting layer to produce different light-emitting colors (for example, white light emission obtained by combining complementary light-emitting colors). Furthermore, a stacked structure in which each light-emitting layer contains different light-emitting substances may be used.

[0270] Furthermore, the light-emitting layers (113, 113a, 113b, 113c) may contain one or more organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0271] When multiple host materials are used in the light-emitting layer (113, 113a, 113b, 113c), it is preferable to use a substance having a larger energy gap as the second host material than the energy gaps of the existing guest material and the first host material. Furthermore, it is preferable that the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the guest material. Furthermore, it is preferable that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the first host material. This structure allows the formation of an exciplex using two types of host materials. To efficiently form an exciplex, it is particularly preferable to combine a compound that easily accepts holes (hole-transporting material) with a compound that easily accepts electrons (electron-transporting material). This structure also allows the simultaneous realization of high efficiency, low voltage, and long life.

[0272] The organic compounds used as the host materials (including the first host material and the second host material) may be hole-transporting materials usable in the hole-transporting layers (112, 112a, and 112b) described above or electron-transporting materials usable in the electron-transporting layers (114, 114a, and 114b) described below, as long as they satisfy the requirements for a host material used in an emitting layer. These organic compounds may also be exciplexes composed of multiple organic compounds (the first host material and the second host material described above). An exciplex (also referred to as an exciplex) formed by multiple organic compounds in an excited state has an extremely small difference between the S1 and T1 levels and functions as a TADF material capable of converting triplet excitation energy into singlet excitation energy. A combination of multiple organic compounds that form an exciplex is preferably one in which one of the compounds has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. As a combination for forming an exciplex, one of the compounds may be a phosphorescent material such as an iridium, rhodium, or platinum-based organometallic complex or a metal complex.

[0273] There are no particular limitations on the light-emitting substances that can be used in the light-emitting layers (113, 113a, 113b, 113c), and light-emitting substances that convert singlet excitation energy into light emission in the visible light range, or light-emitting substances that convert triplet excitation energy into light emission in the visible light range, can be used.

[0274] <Light-emitting material that converts singlet excitation energy into light> Examples of luminescent materials that convert singlet excitation energy into luminescence and can be used in the luminescent layers (113, 113a, 113b, 113c) include the following fluorescent substances (fluorescent luminescent materials): pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), (N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine) (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N , N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), and the like.

[0275] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)phenyl N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-( 9-Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 4,4'-bis(diphenylamino)-1,1'-biphenyl (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl)-4,4'-bis(diphenylamino)-1,1'-biphenyl (abbreviation: TBP), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), and the like can be used.

[0276] In addition, N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl) -2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-yl) N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p -mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAP rn-03, 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0277] <Light-emitting material that converts triplet excitation energy into light> Next, examples of luminescent materials that can be used in the luminescent layer 113 and convert triplet excitation energy into luminescence include phosphorescent materials and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0278] A phosphorescent material is a compound that exhibits phosphorescence but does not exhibit fluorescence at a temperature range from low temperatures (e.g., 77 K) to room temperature (i.e., 77 K to 313 K). The phosphorescent material preferably contains a metal element with a large spin-orbit interaction, such as an organometallic complex, a metal complex (platinum complex), or a rare-earth metal complex. Specifically, a transition metal element is preferred, and a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)) is particularly preferred. Among these, iridium is preferred because it can increase the transition probability associated with the direct transition between the singlet ground state and the triplet excited state.

[0279] <Phosphorescent material (450nm to 570nm: blue or green)> Examples of phosphorescent materials that exhibit blue or green light and have an emission spectrum with a peak wavelength of 450 nm or more and 570 nm or less include the following materials.

[0280] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato] Organometallic complexes containing a 4H-triazole ring, such as iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1- Organometallic complexes containing a 1H-triazole ring, such as methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(II) Iridium(III) tetrakis(1-pyrazolyl)borate (abbreviated as FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) picolinate (abbreviated as FIrpic), and bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviated as FIr6). 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’] Organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviation: FIr(acac)), are also included.

[0281] <Phosphorescent material (495nm to 590nm: green or yellow)> Examples of phosphorescent materials that exhibit green or yellow color and have an emission spectrum with a peak wavelength of 495 nm or more and 590 nm or less include the following materials.

[0282] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm )2(acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]). iridium complexes, organometallic iridium complexes containing a pyrazine ring such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl -κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro Ir(2,3-b)pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviated as Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC] Organometallic iridium complexes containing a pyridine ring, such as [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), and bis(2,4-diphenyl-1,3-oxazolato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviated as [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]).

[0283] <Phosphorescent materials (570nm to 750nm: yellow or red)> Examples of phosphorescent materials that exhibit yellow or red color and have an emission spectrum with a peak wavelength of 570 nm or more and 750 nm or less include the following materials.

[0284] For example, pyrimidinato]iridium(III) such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic complexes containing an imidine ring, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κN). 2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ) 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis[2-(5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN)-4,6-dimethylphenyl-κC](2,2',6,6'-tetramethyl-3,5-heptanedionato-κO,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalinato-N,C 2’ ]iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ )iridium(III) (abbreviation: [Ir(dpq)2(acac)]), organometallic complexes with a pyrazine ring such as (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentanedionato-κ 2Examples of such complexes include organometallic complexes with a pyridine ring, such as (O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: [PtOEP]), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0285] ≪TADF material≫ The following materials can be used as TADF materials. TADF materials are materials that have a small difference between the S1 level and the T1 level (preferably 0.2 eV or less), can upconvert a triplet excited state to a singlet excited state with a small amount of thermal energy (reverse intersystem crossing), and efficiently emit light (fluorescence) from the singlet excited state. Conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level of 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. Delayed fluorescence in TADF materials refers to light emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifetime. Its lifetime is 1×10 -6 seconds or more, preferably 1 x 10 -3 More than a second.

[0286] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as proflavine, eosin, etc. Also included are metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviation: SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)), etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0287] [ka]

[0288] Other examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxy) 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9, 9-Dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Heteroaromatic compounds having a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound, such as 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0289] In addition, a substance in which a π-electron-rich heteroaromatic compound and a π-electron-deficient heteroaromatic compound are directly bonded is particularly preferable because the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-deficient heteroaromatic compound are both strong, thereby reducing the energy difference between the singlet excited state and the triplet excited state. Furthermore, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may also be used as the TADF material. Such a TADF material has a short emission lifetime (excitation lifetime), which can suppress a decrease in the efficiency of light-emitting elements in the high-brightness region.

[0290] [ka]

[0291] In addition to the above, examples of materials capable of converting triplet excitation energy into luminescence include nanostructures of transition metal compounds having a perovskite structure. Nanostructures of metal halide perovskites are particularly preferred. Nanoparticles and nanorods are preferred as such nanostructures.

[0292] In the light-emitting layers (113, 113a, 113b, 113c), one or more substances having an energy gap larger than the energy gap of the light-emitting substance (guest material) may be selected and used as the organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material).

[0293] <Fluorescent host material> When the light-emitting substance used in the light-emitting layers (113, 113a, 113b, and 113c) is a fluorescent light-emitting substance, it is preferable to use, as the organic compound (host material) to be combined, an organic compound having a high energy level in a singlet excited state and a low energy level in a triplet excited state, or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies these conditions, a hole-transporting material (described above) or an electron-transporting material (described below) shown in this embodiment can be used.

[0294] Although some of the examples overlap with those described above, examples of the organic compound (host material) that can be preferably combined with the light-emitting substance (fluorescent light-emitting substance) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0295] Specific examples of organic compounds (host materials) that are preferably used in combination with fluorescent materials include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9,10-diphenylanthracene (abbreviation: DPAnth), N,N ... N-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-Dimethoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzyl benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl}-anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)-benzo[b]naphtho[2,3-d]furan (abbreviated as Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviated as αN-βNPAnth), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviated as βN-mβNPAnth), 1-[4-(10-[1,1'-biphenyl]-4-yl-9 -anthracenyl)phenyl]-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc.

[0296] <Phosphorescent host material> Furthermore, when the light-emitting substance used in the light-emitting layers (113, 113a, 113b, 113c) is a phosphorescent light-emitting substance, an organic compound having a triplet excitation energy greater than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the light-emitting substance can be selected as the organic compound (host material) to be combined. Note that when multiple organic compounds (for example, a first host material and a second host material (or assist material)) are used in combination with the light-emitting substance to form an exciplex, it is preferable to use these multiple organic compounds in combination with the phosphorescent light-emitting substance.

[0297] With this structure, it is possible to efficiently obtain light emission using Exciplex-Triplet Energy Transfer (ExTET), which is an energy transfer from an exciplex to a light-emitting substance. As a combination of multiple organic compounds, it is preferable to use one that easily forms an exciplex, and it is particularly preferable to combine a compound that easily accepts holes (hole transport material) with a compound that easily accepts electrons (electron transport material).

[0298] Although some of the examples overlap with those described above, examples of the organic compound (host material, assist material) that can be preferably combined with the light-emitting substance (phosphorescent light-emitting substance) include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (benzo Examples of suitable metal complexes include organic compounds having an imidazole ring, quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), furodiazine derivatives (organic compounds having a furodiazine ring), zinc- and aluminum-based metal complexes, and the like.

[0299] Among the organic compounds, specific examples of the aromatic amine and carbazole derivative, which are organic compounds with high hole-transporting properties, are the same as the specific examples of the hole-transporting material described above, and any of these is preferable as the host material.

[0300] Specific examples of the dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties among the above organic compounds, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, 2,8-dipheny Examples of suitable host materials include 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and 4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II).

[0301] Other preferred host materials include metal complexes having oxazole- or thiazole-based ligands, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0302] Specific examples of the organic compounds having high electron transport properties, such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives, among the above organic compounds, include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) organic compounds containing heteroaromatic rings with a polyazole ring, such as 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); organic compounds containing heteroaromatic rings with a pyridine ring, such as bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), and 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen); organic compounds containing heteroaromatic rings with a pyridine ring, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDB) TPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviated as 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviated as 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), etc., all of which are preferred as host materials.

[0303] Specific examples of the pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furodiazine derivatives, which are organic compounds with high electron transport properties among the above organic compounds, include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II). 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3 -(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(1,1'-biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d ]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[(3'-dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]- 1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCD Examples of suitable host materials include organic compounds containing heteroaromatic rings with diazine rings, such as 2-[1,1'-biphenyl]-3-yl-4-phenyl-6-(8-[1,1':4',1''-terphenyl]-4-yl-1-dibenzofuranyl)-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviated as 6BP-4Cz2PPm).

[0304] Furthermore, among the above organic compounds, specific examples of metal complexes, which are organic compounds with high electron-transporting properties, include zinc- or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), as well as metal complexes having a quinoline ring or a benzoquinoline ring, all of which are preferable as the host material.

[0305] Other preferred host materials include polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy).

[0306] Furthermore, we have developed bipolar organic compounds with high hole-transporting and electron-transporting properties, such as 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1 Organic compounds having a diazine ring, such as 11-(4-[1,1'-biphenyl]-4-yl-6-phenyl-1,3,5-triazin-2-yl)-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: mINc(II)PTzn), 11-(4-[1,1'-biphenyl]-4-yl-6-phenyl-1,3,5-triazin-2-yl)-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the host material.

[0307] <Electron transport layer> The electron transport layers (114, 114a, 114b) are layers that transport electrons injected from the second electrode 102 or the charge generation layers (106, 106a, 106b) by the electron injection layers (115, 115a, 115b) described later to the light-emitting layers (113, 113a, 113b, 113c). The electron transport material used in the electron transport layers (114, 114a, 114b) has an electron mobility of 1×10 or less at a square root of an electric field strength [V / cm] of 600. -6cm 2 A substance having an electron mobility of 1 / Vs or higher is preferred. Note that other substances can be used as long as they have a higher electron transporting property than hole transporting property. The electron transport layer (114, 114a, 114b) functions as a single layer, but may also have a stacked structure of two or more layers. Note that the above mixed materials have heat resistance, so that by performing a photolithography process on the electron transport layer using such a mixed material, the influence of a thermal process on the device characteristics can be suppressed.

[0308] ≪Electron transport material≫ The electron transport material that can be used for the electron transport layer (114, 114a, 114b) can be an organic compound with high electron transport properties, such as a heteroaromatic compound. A heteroaromatic compound is a cyclic compound containing at least two different elements in the ring. The ring structure can be a three-, four-, five-, or six-membered ring, with a five- or six-membered ring being particularly preferred. The element contained in the heteroaromatic compound is preferably one or more of nitrogen, oxygen, or sulfur in addition to carbon. Heteroaromatic compounds containing nitrogen (nitrogen-containing heteroaromatic compounds) are particularly preferred, and it is preferable to use a material with high electron transport properties (electron transport material) such as a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the same.

[0309] A heteroaromatic compound is an organic compound that contains at least one heteroaromatic ring.

[0310] The heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, a polyazole ring, an oxazole ring, a thiazole ring, etc. The heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, a pyridazine ring, etc. The heteroaromatic ring having a polyazole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, or an oxadiazole ring.

[0311] The heteroaromatic ring also includes a fused heteroaromatic ring having a fused ring structure, such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a phlodiazin ring, or a benzimidazole ring.

[0312] Among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a five-membered ring structure include heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, and heteroaromatic compounds having a benzimidazole ring.

[0313] Furthermore, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a six-membered ring structure include heteroaromatic compounds having a heteroaromatic ring such as a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, and a polyazole ring.Heteroaromatic compounds having a structure in which pyridine rings are linked include heteroaromatic compounds having a bipyridine structure and heteroaromatic compounds having a terpyridine structure.

[0314] Furthermore, examples of heteroaromatic compounds having a fused ring structure partially containing the above-mentioned 6-membered ring structure include heteroaromatic compounds having a fused heteroaromatic ring such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a furodiazine ring (including a structure in which an aromatic ring is fused to the furan ring of a furodiazine ring), and a benzimidazole ring.

[0315] Specific examples of the heteroaromatic compound having a five-membered ring structure (such as a polyazole ring (including an imidazole ring, a triazole ring, and an oxadiazole ring), an oxazole ring, a thiazole ring, and a benzimidazole ring) include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-furan (abbreviation: FURAN ... phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and the like.

[0316] Specific examples of the heteroaromatic compound having a 6-membered ring structure (including heteroaromatic rings having a pyridine ring, a diazine ring, a triazine ring, or the like) include heteroaromatic compounds having a pyridine ring, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB); -triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)-1,1'-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-[1,1'-biphenyl]-4-yl-4-phenyl-6-[9,9'-spirobi(9H-fluoren)-2-yl]1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), Heteroaromatic compounds containing heteroaromatic rings with a triazine ring, such as 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), mFBPTzn, 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), ...6-Bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviated as 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviated as 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2 PPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(1,1'-biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtBP Nfpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviated as 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(1,1'-biphenyl- and heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). The aromatic compounds containing a heteroaromatic ring include heteroaromatic compounds having a fused heteroaromatic ring.

[0317] Other examples include 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), and 6-(1,1'-biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: and heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), and 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthryl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn).

[0318] Specific examples of the heteroaromatic compound having a fused ring structure partially containing a 6-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), and 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline. (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2mpPCBPDBq, and other heteroaromatic compounds having a quinoxaline ring are also included.

[0319] In addition to the heteroaromatic compounds described above, the electron transport layers (114, 114a, 114b) may also include the following metal complexes: metal complexes having a quinoline ring or a benzoquinoline ring, such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3), Almq3, 8-quinolinolatolithium(I) (abbreviation: Liq), BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq); and metal complexes having an oxazole ring or a thiazole ring, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0320] In addition, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used as electron transport materials.

[0321] The electron transport layer (114, 114a, 114b) may not only be a single layer, but also have a structure in which two or more layers made of the above-mentioned substances are stacked.

[0322] <Electron injection layer> The electron injection layers (115, 115a, 115b) are layers containing a substance with high electron injection properties. The electron injection layers (115, 115a, 115b) are layers for increasing the efficiency of electron injection from the second electrode 102 or the charge generation layers (106, 106a, 106b), and it is preferable to use a material for the second electrode 102 having a work function with a small difference (0.5 eV or less) between the work function and the LUMO level of the material for the electron injection layers (115, 115a, 115b). Therefore, the electron injection layer 115 may contain any of lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolatolithium (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviated as LiPPP), lithium oxide (LiO x Alkali metals, alkaline earth metals, such as cesium carbonate, or compounds thereof can be used. Rare earth metal compounds, such as erbium fluoride (ErF3) and ytterbium (Yb), can also be used. The electron injection layers (115, 115a, 115b) may be formed by mixing a plurality of the above materials, or by stacking a plurality of the above materials. Electrides may also be used for the electron injection layers (115, 115a, 115b). Examples of electrides include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. The substances constituting the above-mentioned electron transport layers (114, 114a, 114b) can also be used.

[0323] The electron injection layer (115, 115a, 115b) may also be made of a mixed material containing an organic compound and an electron donor (donor). Such a mixed material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that is excellent at transporting the generated electrons. Specifically, the electron transport materials (metal complexes or heteroaromatic compounds, etc.) used in the electron transport layer (114, 114a, 114b) described above can be used. The electron donor may be any substance that exhibits electron donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferred, such as lithium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides or alkaline earth metal oxides are preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. Organic compounds such as tetrathiafulvalene (TTF) can also be used. Furthermore, a plurality of these materials may be laminated.

[0324] Alternatively, the electron injection layer (115, 115a, 115b) may be made of a mixed material containing an organic compound and a metal. The organic compound used here preferably has a LUMO level of -3.6 eV or more and -2.3 eV or less. A material having an unshared electron pair is also preferred.

[0325] Therefore, the organic compound used in the mixed material may be a mixed material obtained by mixing a heteroaromatic compound with a metal, as described above as being usable in the electron transport layer. Preferred heteroaromatic compounds include those having a five-membered ring structure (such as an imidazole ring, a triazole ring, an oxazole ring, an oxadiazole ring, a thiazole ring, or a benzimidazole ring), a six-membered ring structure (such as a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, or a pyridazine ring), a triazine ring, a bipyridine ring, or a terpyridine ring), or a fused ring structure partially including a six-membered ring structure (such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, or a phenanthroline ring). Specific materials are described above, so further explanation is omitted here.

[0326] As the metal used in the mixed material, it is preferable to use a transition metal belonging to Group 5, 7, 9 or 11 in the periodic table or a material belonging to Group 13, such as Ag, Cu, Al or In. In this case, the organic compound forms a half-occupied molecular orbital (SOMO) with the transition metal.

[0327] For example, when light obtained from the light-emitting layer 113b is to be amplified, the optical distance between the second electrode 102 and the light-emitting layer 113b is preferably set to be less than ¼ of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, the optical distance can be adjusted by changing the film thickness of the electron-transporting layer 114b or the electron-injecting layer 115b.

[0328] Furthermore, as in the light-emitting device shown in Figure 6(D), by providing a charge generation layer 106 between two EL layers (103a, 103b), a structure in which multiple EL layers are stacked between a pair of electrodes (also called a tandem structure) can be formed.

[0329] <Charge generation layer> The charge generation layer 106 has a function of injecting electrons into the EL layer 103a and injecting holes into the EL layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be configured by adding an electron acceptor to a hole transporting material, or by adding an electron donor to an electron transporting material. Alternatively, both of these configurations may be stacked. By forming the charge generation layer 106 using the above-mentioned materials, it is possible to suppress an increase in driving voltage when EL layers are stacked.

[0330] When the charge generation layer 106 has a structure in which an electron acceptor is added to a hole-transporting material that is an organic compound, the material described in this embodiment can be used as the hole-transporting material. Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples of the electron acceptor include oxides of metals that belong to Groups 4 to 8 of the periodic table. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

[0331] When the charge generation layer 106 has a structure in which an electron donor is added to an electron transporting material, the materials described in this embodiment can be used as the electron transporting material. As the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 of the periodic table, or an oxide or carbonate thereof can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, or the like can be preferably used. Alternatively, an organic compound such as tetrathianaphthacene can be used as the electron donor.

[0332] Although FIG. 6D shows a structure in which the EL layer 103 has two stacked layers, a stacked structure of three or more EL layers may be used by providing a charge generating layer between different EL layers.

[0333] <Substrate> The light-emitting device described in this embodiment mode can be formed on various substrates. Note that the type of substrate is not limited to a specific one. Examples of the substrate include a semiconductor substrate (for example, a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, paper containing a fibrous material, or a base film.

[0334] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, soda lime glass, etc. Examples of flexible substrates, laminated films, base films, etc. include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic vapor deposition films, and papers.

[0335] The light-emitting device described in this embodiment can be fabricated by a gas-phase method such as vapor deposition, or a liquid-phase method such as spin coating or inkjet printing. When a vapor deposition method is used, a physical vapor deposition (PVD) method such as sputtering, ion plating, ion beam deposition, molecular beam deposition, or vacuum deposition, or a chemical vapor deposition (CVD) method can be used. In particular, layers having various functions included in the EL layer of the light-emitting device (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) can be formed by a vapor deposition method (vacuum deposition, etc.), a coating method (dip coating, die coating, bar coating, spin coating, spray coating, etc.), a printing method (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure printing, microcontact printing, etc.), or the like.

[0336] When applying the above-mentioned coating method, printing method, or other film formation method, it is possible to use high molecular weight compounds (oligomers, dendrimers, polymers, etc.), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight of 400 to 4000), inorganic compounds (quantum dot materials, etc.), etc. As quantum dot materials, colloidal quantum dot materials, alloy-type quantum dot materials, core-shell type quantum dot materials, core-type quantum dot materials, etc. can be used.

[0337] The layers constituting the EL layer 103 of the light-emitting device described in this embodiment (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) are not limited to the materials described in this embodiment, and other materials can be used in combination as long as they can fulfill the functions of each layer.

[0338] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0339] (Fourth embodiment) In this embodiment, a specific configuration example of a light-emitting and receiving device according to one embodiment of the present invention and an example of a manufacturing method thereof will be described.

[0340] <Configuration example of light emitting and receiving device 700> The light-emitting and receiving device 700 shown in FIG. 7A includes a light-emitting device 550B, a light-emitting device 550G, a light-emitting device 550R, and a photoelectric conversion device 550PS. The light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the photoelectric conversion device 550PS are formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes circuits such as a driving circuit composed of multiple transistors, as well as wiring and the like that electrically connects these devices. For example, these driving circuits are electrically connected to and can drive the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the photoelectric conversion device 550PS. The light-emitting and receiving device 700 also includes an insulating layer 705 on the functional layer 520 and each device (the light-emitting device and the photoelectric conversion device). The insulating layer 705 functions to bond the second substrate 770 and the functional layer 520 together.

[0341] Note that the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the photoelectric conversion device 550PS have the device structures described in Embodiments 1 and 3. That is, the light-emitting devices have different EL layers 103 shown in FIG. 6A, and the photoelectric conversion device has the structure shown in FIG. 3C.

[0342] In this specification and the like, a structure in which light-emitting layers of light-emitting devices of different colors (e.g., blue (B), green (G), and red (R)) and photoelectric conversion layers of photoelectric conversion devices are separately formed or separately painted may be referred to as an SBS (side-by-side) structure. In the light-emitting and receiving device 700 shown in FIG. 7A, the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the photoelectric conversion device 550PS are arranged in this order, but one embodiment of the present invention is not limited to this configuration. For example, in the light-emitting and receiving device 700, these devices may be arranged in the order of the light-emitting device 550R, the light-emitting device 550G, the light-emitting device 550B, and the photoelectric conversion device 550PS.

[0343] 7A, light-emitting device 550B has electrode 551B, electrode 552, and EL layer 103B. Light-emitting device 550G has electrode 551G, electrode 552, and EL layer 103G. Light-emitting device 550R has electrode 551R, electrode 552, and EL layer 103R. Photoelectric conversion device 550PS has electrode 551PS, electrode 552, and photoelectric conversion layer 103PS. Specific structures of each layer of the photoelectric conversion device are as described in Embodiment 1. Specific structures of each layer of the light-emitting device are as described in Embodiment 3. EL layer 103B, EL layer 103G, and EL layer 103R have a stacked structure including multiple layers with different functions, including light-emitting layers (105B, 105G, and 105R). Photoelectric conversion layer 103PS has a stacked structure including multiple layers with different functions, including active layer 105PS. 7A illustrates the case where EL layer 103B includes hole injection / transport layer 104B, light-emitting layer 105B, electron transport layer 108B, and electron injection layer 109; EL layer 103G includes hole injection / transport layer 104G, light-emitting layer 105G, electron transport layer 108G, and electron injection layer 109; EL layer 103R includes hole injection / transport layer 104R, light-emitting layer 105R, electron transport layer 108R, and electron injection layer 109; and photoelectric conversion layer 103PS includes first transport layer 104PS, active layer 105PS, structure 220, second transport layer 108PS, and electron injection layer 109, but the present invention is not limited thereto. Furthermore, structure 220 is illustrated as a layer in FIG. 7A, but structure 220 has a convex shape as described in Embodiment 1. The hole injection / transport layers (104B, 104G, 104R) are layers having the functions of the hole injection layer and the hole transport layer shown in the third embodiment, and may have a laminated structure.

[0344] The electron transport layers (108B, 108G, 108R) and the second transport layer 108PS may have a function of blocking holes that pass through the light-emitting layers (105B, 105G, 105R) from the anode side to the cathode side. The electron injection layer 109 may have a laminated structure formed of partially or entirely different materials.

[0345] 7(A), an insulating layer 107 may be formed on the side surfaces (or edges) of the hole injection / transport layers (104B, 104G, 104R), the light-emitting layers (105B, 105G, 105R), and the electron transport layers (108B, 108G, 108R) of the EL layers (103B, 103G, 103R) and on the side surfaces (or edges) of the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS of the photoelectric conversion layer 103PS. The insulating layer 107 is formed in contact with the side surfaces (or edges) of the EL layers (103B, 103G, 103R) and the photoelectric conversion layer 103PS. This can prevent oxygen, moisture, or their constituent elements from penetrating into the EL layers (103B, 103G, 103R) and the photoelectric conversion layer 103PS from their side surfaces. The insulating layer 107 can be made of, for example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide. The insulating layer 107 may be formed by laminating the above-mentioned materials. The insulating layer 107 can be formed by sputtering, CVD, MBE, PLD, ALD, or other methods, but ALD is preferred because of its excellent coverage. The insulating layer 107 has a structure that continuously covers the side surfaces (or ends) of parts of the EL layers (103B, 103G, 103R) of adjacent light-emitting devices or parts of the photoelectric conversion layers 103PS of the photoelectric conversion device. 7A, part of the EL layer 103B of the light-emitting device 550B and part of the EL layer 103G of the light-emitting device 550G are covered with an insulating layer 107BG on their side surfaces. Furthermore, a partition wall 528 made of an insulating material may be formed in the area covered with the insulating layer 107BG, as shown in FIG.

[0346] An electron injection layer 109 is formed on the electron transport layers (108B, 108G, 108R) that are part of the EL layers (103B, 103G, 103R), the second transport layer 108PS that is part of the photoelectric conversion layer 103PS, and the insulating layer 107. The electron injection layer 109 may have a stacked structure of two or more layers (for example, a stack of layers with different electrical resistances).

[0347] The electrode 552 is formed on the electron injection layer 109. The electrodes (551B, 551G, 551R) and the electrode 552 have overlapping regions. The light-emitting layer 105B is located between the electrode 551B and the electrode 552, the light-emitting layer 105G is located between the electrode 551G and the electrode 552, the light-emitting layer 105R is located between the electrode 551R and the electrode 552, and the photoelectric conversion layer 103PS is located between the electrode 551PS and the electrode 552.

[0348] 7(A) have the same structure as the EL layer 103 described in Embodiment 3. The photoelectric conversion layer 103PS has the same structure as the photoelectric conversion layer 203 described in Embodiment 1. For example, the light-emitting layer 105B can emit blue light, the light-emitting layer 105G can emit green light, and the light-emitting layer 105R can emit red light.

[0349] Partition walls 528 are provided between the electrodes (551B, 551G, 551R, 551PS), parts of the EL layers (103B, 103G, 103R), and parts of the photoelectric conversion layer 103PS. As shown in Fig. 7(A), the electrodes (551B, 551G, 551R, 551PS), parts of the EL layers (103B, 103G, 103R), and parts of the photoelectric conversion layer 103PS of each device are in contact with the partition walls 528 at their sides (or ends) via the insulating layer 107.

[0350] In each EL layer and photoelectric conversion layer, the hole injection layer included in the hole transport region located between the anode and the light-emitting layer, and between the anode and the active layer, often has high conductivity, and therefore, if it is formed as a layer common to adjacent light-emitting devices, it may cause crosstalk. Therefore, by providing a partition 528 made of an insulating material between each EL layer and photoelectric conversion layer as shown in this configuration example, it is possible to suppress the occurrence of crosstalk between adjacent devices (between a photoelectric conversion device and a light-emitting device, between light-emitting devices and light-emitting devices, or between a photoelectric conversion device and a photoelectric conversion device).

[0351] Furthermore, in the manufacturing method described in this embodiment, the side surfaces (or edges) of the EL layer and the photoelectric conversion layer are exposed during the patterning process. Therefore, the EL layer and the photoelectric conversion layer are likely to deteriorate due to the intrusion of oxygen, water, and the like from the side surfaces (or edges) of the EL layer and the photoelectric conversion layer. Therefore, by providing the partition 528, it is possible to suppress the deterioration of the EL layer and the photoelectric conversion layer during the manufacturing process.

[0352] Furthermore, by providing the partition 528, it is possible to planarize recesses formed between adjacent devices (between a photoelectric conversion device and a light-emitting device, between light-emitting devices, or between photoelectric conversion devices). Planarizing the recesses can prevent disconnection of the electrodes 552 formed on each EL layer and the photoelectric conversion layer. Examples of insulating materials used to form the partition 528 include organic materials such as acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, and precursors of these resins. Organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin may also be used. Photosensitive resins such as photoresists can also be used. The photosensitive resin may be a positive-type material or a negative-type material.

[0353] By using a photosensitive resin, the partition 528 can be formed only by exposure and development processes. Alternatively, the partition 528 may be formed using a negative photosensitive resin (e.g., a resist material). When an insulating layer containing an organic material is used as the partition 528, it is preferable to use a material that absorbs visible light. If a material that absorbs visible light is used for the partition 528, the partition 528 can absorb light emitted from the EL layer, thereby suppressing light (stray light) that may leak to the adjacent EL layer and photoelectric conversion layer. Therefore, a display panel with high display quality can be provided.

[0354] The difference in height between the upper surface of the partition wall 528 and the upper surface of any one of the EL layer 103B, the EL layer 103G, the EL layer 103R, and the photoelectric conversion layer 103PS is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the partition wall 528. For example, the partition wall 528 may be provided so that the upper surface of any one of the EL layer 103B, the EL layer 103G, the EL layer 103R, and the photoelectric conversion layer 103PS is higher than the upper surface of the partition wall 528. For example, the partition wall 528 may be provided so that the upper surface of the partition wall 528 is higher than the upper surfaces of the EL layer 103B, the EL layer 103G, the EL layer 103R, and the photoelectric conversion layer 103PS.

[0355] In a high-resolution light-receiving and light-emitting device (display panel) exceeding 1000 ppi, if electrical conduction is found between the EL layer 103B, the EL layer 103G, the EL layer 103R, and the photoelectric conversion layer 103PS, crosstalk occurs, narrowing the color gamut that can be displayed by the light-receiving and light-emitting device. By providing the partition 528 in a high-resolution display panel exceeding 1000 ppi, preferably a high-resolution display panel exceeding 2000 ppi, and more preferably an ultra-high-resolution display panel exceeding 5000 ppi, a display panel that can display vivid colors can be provided.

[0356] 7(B) and 7(C) are schematic top views of the light emitting and receiving device 700 corresponding to the dashed line Ya-Yb in the cross-sectional view of FIG. 7(A). Specifically, the light emitting devices 550B, 550G, and 550R are arranged in a matrix. FIG. 7(B) shows a stripe arrangement in which light emitting devices of the same color are arranged in the X direction. FIG. 7(C) shows a configuration in which light emitting devices of the same color are arranged in the X direction, but with a pattern formed for each pixel. The arrangement of the light emitting devices is not limited to this; other arrangements, such as a delta arrangement or a zigzag arrangement, may also be used. Alternatively, a pentile arrangement or a diamond arrangement may also be used.

[0357] In the separation process of each EL layer (EL layer 103B, EL layer 103G, and EL layer 103R) and the photoelectric conversion layer 103PS, since pattern formation is performed by photolithography, a high-definition light-emitting and receiving device (display panel) can be manufactured. Also, the end portions (side surfaces) of the EL layers processed by pattern formation using photolithography have a shape with substantially the same surface (or are located on substantially the same plane). At this time, the width (SE) of the gap 580 between each EL layer and the photoelectric conversion layer is preferably 5 μm or less, and more preferably 1 μm or less.

[0358] In the EL layer, particularly, the hole injection layer contained in the hole transport region located between the anode and the light-emitting layer often has a high conductivity. Therefore, if it is formed as a layer common to adjacent light-emitting devices, it may cause crosstalk. Thus, as shown in this configuration example, by separating and processing the EL layer by pattern formation using photolithography, it becomes possible to suppress the occurrence of crosstalk between adjacent light-emitting devices.

[0359] Also, FIG. 7(D) is a schematic cross-sectional view corresponding to the dashed-dotted line C1-C2 in FIGS. 7(B) and (C). FIG. 7(D) shows a connection portion 130 where the connection electrode 551C and the electrode 552 are electrically connected. In the connection portion 130, the electrode 552 is provided in contact with the connection electrode 551C. Also, a partition wall 528 is provided to cover the end portion of the connection electrode 551C.

[0360] <Example of manufacturing method of light-emitting and receiving device> As shown in FIG. 8(A), the electrodes 551B, 551G, 551R, and 551PS are formed. For example, a conductive film is formed on the functional layer 520 formed on the first substrate 510 and processed into a predetermined shape using photolithography.

[0361] Conductive films can be formed using methods such as sputtering, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), vacuum evaporation, pulsed laser deposition (PLD), and atomic layer deposition (ALD). CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. Metal organic chemical vapor deposition (MOCVD) is another type of thermal CVD.

[0362] In addition to the photolithography method described above, the conductive film may be processed by a nanoimprint method, a sandblasting method, a lift-off method, etc. Alternatively, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0363] There are two typical photolithography methods. One is to form a resist mask on a thin film to be processed, process the thin film by etching or the like, and then remove the resist mask. The other is to form a photosensitive thin film, and then process the thin film into a desired shape by exposing and developing it. Note that the former method includes heat treatment steps such as baking after resist application (PAB: Pre Applied Bake) and baking after exposure (PEB: Post Exposure Bake). In one embodiment of the present invention, lithography is used not only for processing conductive films, but also for processing thin films (films made of organic compounds or films partially containing organic compounds) used to form EL layers.

[0364] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed using immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. Instead of light used for exposure, an electron beam can also be used. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0365] For etching the thin film using a resist mask, dry etching, wet etching, sandblasting, or the like can be used.

[0366] Next, as shown in FIG. 8(B), a hole injection / transport layer 104B, a light-emitting layer 105B, and an electron transport layer 108B are formed on the electrodes 551B, 551G, 551R, and 551PS. The hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B can be formed by, for example, vacuum deposition. Furthermore, a sacrificial layer 110B is formed on the electron transport layer 108B. The materials described in Embodiment 3 can be used to form the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B.

[0367] The sacrificial layer 110B is preferably a film that is highly resistant to the etching processes of the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B, i.e., a film with a large etching selectivity. The sacrificial layer 110B preferably has a stacked structure of a first sacrificial layer and a second sacrificial layer that have different etching selectivity. The sacrificial layer 110B can be a film that can be removed by wet etching, which causes minimal damage to the EL layer 103B. Oxalic acid or the like can be used as an etching material for wet etching.

[0368] The sacrificial layer 110B may be, for example, a metal film, an alloy film, a metal oxide film, a semiconductor film, an inorganic insulating film, etc. The sacrificial layer 110B may be formed by various film formation methods such as a sputtering method, a vapor deposition method, a CVD method, an ALD method, etc.

[0369] The sacrificial layer 110B may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0370] The sacrificial layer 110B may be made of a metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO). Other examples include indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), and indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide). Alternatively, silicon-containing indium tin oxide may be used.

[0371] The present invention can also be applied to a case where, instead of the gallium, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) is used. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0372] The sacrificial layer 110B may be made of an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide.

[0373] Furthermore, it is preferable to use a material for the sacrificial layer 110B that is soluble in a chemically stable solvent, at least for the uppermost electron transport layer 108B. Materials that dissolve in water or alcohol are particularly suitable for use in the sacrificial layer 110B. When forming the sacrificial layer 110B, it is preferable to apply the sacrificial layer 110B dissolved in a solvent such as water or alcohol using a wet film-forming method, followed by a heat treatment to evaporate the solvent. In this case, heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B.

[0374] When the sacrificial layer 110B has a laminated structure, a layer made of the above-mentioned material can be used as a first sacrificial layer, and a second sacrificial layer can be formed thereon to form a laminated structure.

[0375] In this case, the second sacrificial layer is a film used as a hard mask when etching the first sacrificial layer. Furthermore, the first sacrificial layer is exposed when the second sacrificial layer is processed. Therefore, a combination of films with a high etching selectivity is selected for the first sacrificial layer and the second sacrificial layer. Therefore, a film that can be used for the second sacrificial layer can be selected depending on the etching conditions for the first sacrificial layer and the second sacrificial layer.

[0376] For example, when dry etching using a gas containing fluorine (also called a fluorine-based gas) is used to etch the second sacrificial layer, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, or an alloy containing molybdenum and tungsten can be used for the second sacrificial layer.Here, metal oxide films such as IGZO and ITO can be used as films that can have a large etching selectivity (i.e., can slow the etching rate) compared to dry etching using the above fluorine-based gas, and these can be used for the first sacrificial layer.

[0377] However, the second sacrificial layer is not limited to this, and can be selected from various materials depending on the etching conditions of the first sacrificial layer and the second sacrificial layer, for example, from among the films that can be used for the first sacrificial layer.

[0378] The second sacrificial layer may be, for example, a nitride film, such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, or germanium nitride.

[0379] Alternatively, an oxide film can be used as the second sacrificial layer. Typically, an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used.

[0380] Next, as shown in FIG. 8(C), resist is applied to the sacrificial layer 110B, and the resist is formed into a desired shape (resist mask: REG) using photolithography. When using this method, heat treatment processes such as pre-applied bake (PAB) after resist application and post-exposure bake (PEB) after exposure are also performed. For example, the PAB temperature is approximately 100°C, and the PEB temperature is approximately 120°C. Therefore, the light-emitting device must be able to withstand these processing temperatures.

[0381] Next, using the resist mask REG, the portion of the sacrificial layer 110B not covered by the resist mask REG is etched away. After removing the resist mask REG, the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B not covered by the sacrificial layer are etched away. The hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B are then etched into a shape having a side surface on the electrode 551B (or an exposed side surface) or into a strip-like shape extending in a direction intersecting the plane of the page. Dry etching is preferred for this etching. When the sacrificial layer 110B has a laminated structure of the first and second sacrificial layers, the second sacrificial layer may be etched in part using the resist mask REG, and then the resist mask REG may be removed. Using the second sacrificial layer as a mask, the first sacrificial layer may be etched in part, thereby shaping the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B into the desired shape. These etching processes result in the shape shown in FIG. 9(A).

[0382] 9(B), a hole injection / transport layer 104G, a light-emitting layer 105G, and an electron transport layer 108G are formed on the sacrificial layer 110B, the electrode 551G, the electrode 551R, and the electrode 551PS. The materials used to form the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G can be the same as those used in Embodiment 3. The hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G can be formed by vacuum deposition, for example.

[0383] 9(C), a sacrificial layer 110G is formed on the electron transport layer 108G, a resist is applied to the sacrificial layer 110G, and the resist is formed into a desired shape (resist mask: REG) using photolithography. The portion of the sacrificial layer 110G that is not covered by the resist mask is removed by etching. After the resist mask is removed, the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G that are not covered by the sacrificial layer are removed by etching. The hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G are then shaped to have a side surface on the electrode 551G (or an exposed side surface) or a strip-like shape extending in a direction intersecting the plane of the page. Dry etching is preferred for this etching. Furthermore, the sacrificial layer 110G can be made of the same material as the sacrificial layer 110B. When the sacrificial layer 110G has a laminated structure of the first and second sacrificial layers, a portion of the second sacrificial layer may be etched using a resist mask, the resist mask may be removed, and a portion of the first sacrificial layer may be etched using the second sacrificial layer as a mask, thereby processing the hole injection / transport layer 104G, the light-emitting layer 105G, and the electron transport layer 108G into the desired shapes. These etching processes result in the shape shown in FIG. 10(A).

[0384] 10(B), a hole injection / transport layer 104R, a light-emitting layer 105R, and an electron transport layer 108R are formed on the sacrificial layer 110B, the sacrificial layer 110G, the electrode 551R, and the electrode 551PS. The materials used to form the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R can be the same as those used in Embodiment 3. The hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R can be formed by vacuum deposition, for example.

[0385] 10(C), a sacrificial layer 110R is formed on the electron transport layer 108R, a resist is applied to the sacrificial layer 110R, and the resist is formed into a desired shape (resist mask: REG) using photolithography. The portion of the sacrificial layer 110R that is not covered by the resist mask is removed by etching. After the resist mask is removed, the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R that are not covered by the sacrificial layer are removed by etching. The hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R are then shaped to have a side surface on the electrode 551R (or an exposed side surface) or a strip-like shape extending in a direction intersecting the plane of the page. Dry etching is preferred for this etching. Furthermore, the sacrificial layer 110R can be made of the same material as the sacrificial layer 110B. When the sacrificial layer 110R has a laminated structure of the first and second sacrificial layers, a portion of the second sacrificial layer may be etched using a resist mask, the resist mask may be removed, and a portion of the first sacrificial layer may be etched using the second sacrificial layer as a mask, thereby processing the hole injection / transport layer 104R, the light-emitting layer 105R, and the electron transport layer 108R into the desired shapes. These etching processes result in the shape shown in FIG. 11(A).

[0386] 11(B), first transport layer 104PS, active layer 105PS, structural body 220, and second transport layer 108PS are formed on sacrificial layer 110B, sacrificial layer 110G, sacrificial layer 110R, and electrode 551PS. The materials used to form first transport layer 104PS, active layer 105PS, structural body 220, and second transport layer 108PS can be the same as those described in Embodiment 1. For example, vacuum deposition can be used to form first transport layer 104PS, active layer 105PS, structural body 220, and second transport layer 108PS.

[0387] 11(C), a sacrificial layer 110PS is formed on the second transport layer 108PS, a resist is applied to the sacrificial layer 110PS, the resist is formed into a desired shape (resist mask: REG) using photolithography, a portion of the sacrificial layer 110PS that is not covered by the obtained resist mask is removed by etching, and after the resist mask is removed, the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS that are not covered by the sacrificial layer 110PS are removed by etching, and the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS are processed into a shape having a side surface on the electrode 551PS (or an exposed side surface) or into a strip shape extending in a direction intersecting with the paper surface. Note that dry etching is preferred for the etching. In addition, the sacrificial layer 110PS can be made of the same material as the sacrificial layer 110B. When the sacrificial layer 110PS has a laminated structure of the first and second sacrificial layers, a portion of the second sacrificial layer may be etched using a resist mask, the resist mask may be removed, and a portion of the first sacrificial layer may be etched using the second sacrificial layer as a mask, thereby processing the first transport layer 104PS, the active layer 105PS, and the second transport layer 108PS into the predetermined shapes. These etching processes result in the shape shown in FIG. 11(D).

[0388] Next, as shown in FIG. 12(A), the insulating layer 107 is formed on the sacrificial layers 110B, 110G, 110R, and 110PS.

[0389] The insulating layer 107 can be formed by, for example, ALD. In this case, the insulating layer 107 is formed in contact with the side surfaces (ends) of the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of the light-emitting devices, and the first transport layer 104PS, active layer 105PS, structure 220, and second transport layer 108PS of the photoelectric conversion device, as shown in FIG. 12(A). This can prevent oxygen, moisture, or their constituent elements from penetrating into the interior from the side surfaces. Examples of materials that can be used for the insulating layer 107 include aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, and silicon nitride oxide.

[0390] Next, as shown in FIG. 12(B), after removing the sacrificial layers (110B, 110G, 110R, 110PS), the electron injection layer 109 is formed on the insulating layers (107B, 107G, 107R, 107PS), the electron transport layers (108B, 108G, 108R), and the second transport layer 108PS. The materials used in Embodiment 3 can be used to form the electron injection layer 109. The electron injection layer 109 is formed by, for example, vacuum evaporation. The electron injection layer 109 is formed on the electron transport layers (108B, 108G, 108R) and the second transport layer 108PS. The electron injection layer 109 has a structure in which it contacts the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of each light-emitting device, and the first transport layer 104PS, active layer 105PS, structure 220, and second transport layer 108PS of the photoelectric conversion device on each side (each end) via insulating layers (107B, 107G, 107R, 107PS).

[0391] 12(C), an electrode 552 is formed. The electrode 552 is formed by, for example, vacuum deposition. The electrode 552 is formed on the electron injection layer 109. The electrode 552 is structured to be in contact with the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) of the light-emitting devices, as well as with the side surfaces (ends) of the first transport layer 104PS, active layer 105PS, structure 220, and second transport layer 108PS of the photoelectric conversion device, via the electron injection layer 109 and insulating layers (107B, 107G, 107R, 107PS). This makes it possible to prevent electrical short-circuiting between the hole injection / transport layers (104B, 104G, 104R), the light-emitting layers (105B, 105G, 105R), and the electron transport layers (108B, 108G, 108R) of each light-emitting device, and between the first transport layer 104PS, the active layer 105PS, the structure 220, the second transport layer 108PS of the photoelectric conversion device and the electrode 552.

[0392] Through the above steps, EL layers 103B, 103G, 103R, and photoelectric conversion layer 103PS in light-emitting devices 550B, 550G, and 550R, and photoelectric conversion device 550PS can be separated and processed, respectively.

[0393] In addition, since pattern formation is performed by photolithography in the separation processing of these EL layers (EL layer 103B, EL layer 103G, EL layer 103R) and photoelectric conversion layer 103PS, a high-definition light receiving and emitting device (display panel) can be manufactured. Furthermore, the end (side) of the EL layer processed by pattern formation by photolithography has a shape that has approximately the same surface (or is located on approximately the same plane).

[0394] Furthermore, the hole injection / transport layers (104B, 104G, 104R) in these EL layers and the first transport layer 104PS in the photoelectric conversion layer often have high electrical conductivity, which can cause crosstalk if they are formed as layers common to adjacent light-emitting devices. Therefore, by separating the EL layers using pattern formation by photolithography as shown in this configuration example, it is possible to suppress the occurrence of crosstalk between adjacent light-emitting devices and photoelectric conversion devices.

[0395] In addition, the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) included in each EL layer (EL layer 103B, EL layer 103G, and EL layer 103R) of each light-emitting device in this configuration, and the first transport layer 104PS, active layer 105PS, structure 220, and second transport layer 108PS included in the photoelectric conversion layer 103PS of the photoelectric conversion device are patterned by photolithography in the separation process, so that the ends (side surfaces) of the processed EL layers have a shape that has approximately the same surface (or is located on approximately the same plane).

[0396] Furthermore, the hole injection / transport layers (104B, 104G, 104R), light-emitting layers (105B, 105G, 105R), and electron transport layers (108B, 108G, 108R) included in each EL layer (EL layer 103B, EL layer 103G, and EL layer 103R) of each light-emitting device, and the first transport layer 104PS, active layer 105PS, structure 220, and second transport layer 108PS included in photoelectric conversion layer 103PS of the photoelectric conversion device are patterned by photolithography during separation processing. Therefore, each processed end (side) has a gap 580 between adjacent light-emitting devices. Note that in FIG. 12(C), when gap 580 is represented by the distance SE between the EL layers of adjacent light-emitting devices, the smaller the distance SE, the higher the aperture ratio and the resolution. On the other hand, the greater the distance SE, the more tolerant the effect of manufacturing process variations between adjacent light-emitting devices can be, and therefore the higher the manufacturing yield can be. To be suitable for the light-emitting device miniaturization process manufactured according to the present specification, the distance SE between the EL layers of adjacent light-emitting devices can be set to 0.5 μm or more and 5 μm or less, preferably 1 μm or more and 3 μm or less, more preferably 1 μm or more and 2.5 μm or less, and even more preferably 1 μm or more and 2 μm or less. Typically, the distance SE is preferably 1 μm or more and 2 μm or less (e.g., 1.5 μm or thereabouts).

[0397] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0398] The island-shaped EL layer in an MML-structure light-emitting / receiving device is not formed using a metal mask pattern, but is formed by processing the EL layer after it has been deposited. This makes it possible to realize light-emitting / receiving devices with higher resolution or a higher aperture ratio than ever before. Furthermore, since the EL layer can be made differently for each color, it is possible to realize light-emitting / receiving devices with extremely vivid images, high contrast, and high display quality. Furthermore, by providing a sacrificial layer on the EL layer, damage to the EL layer during the manufacturing process can be reduced, thereby improving the reliability of the light-emitting device.

[0399] Note that when processing the EL layer into an island shape, a structure in which processing is performed directly above the light-emitting layer using photolithography is also possible. In such a structure, damage (such as damage due to processing) may occur in the light-emitting layer, significantly impairing reliability. Therefore, when manufacturing the light-emitting / receiving device of one embodiment of the present invention, it is preferable to use a method in which a sacrificial layer or the like is formed above the light-emitting layer, such as on the second carrier-transport layer or the second carrier-injection layer, and the light-emitting layer is processed into an island shape. By applying this method, a highly reliable display panel can be provided.

[0400] In the light-emitting device 550B, the light-emitting device 550G, and the light-emitting device 550R shown in Figures 7(A) and 12(C), the width of the EL layer (103B, 103G, 103R) is approximately equal to the width of the electrode (551B, 551G, 551R), and in the photoelectric conversion device 550PS, the width of the photoelectric conversion layer 103PS is approximately equal to the width of the electrode 551PS, but one embodiment of the present invention is not limited to this.

[0401] In the light-emitting devices 550B, 550G, and 550R, the width of the EL layers (103B, 103G, and 103R) may be smaller than the width of the electrodes (551B, 551G, and 551R). Furthermore, in the photoelectric conversion device 550PS, the width of the photoelectric conversion layer 103PS may be smaller than the width of the electrode 551PS. Figure 12(D) shows an example in which the width of the EL layers (103B and 103G) is smaller than the width of the electrodes (551B and 551G) in the light-emitting devices 550B and 550G.

[0402] In the light-emitting devices 550B, 550G, and 550R, the width of the EL layers (103B, 103G, and 103R) may be greater than the width of the electrodes (551B, 551G, and 551R). In the photoelectric conversion device 550PS, the width of the photoelectric conversion layer 103PS may be greater than the width of the electrode 551PS. Figure 12(E) shows an example in which the width of the EL layer 103R in the light-emitting device 550R is greater than the width of the electrode 551R.

[0403] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0404] (Embodiment 5) In this embodiment, a light-emitting and receiving device 720 will be described with reference to Figs. 13 to 15. The light-emitting and receiving device 720 shown in Figs. 13 to 15 is a light-emitting and receiving device having a photoelectric conversion device and a light-emitting device as described in Embodiments 1 and 3. However, the light-emitting and receiving device 720 described in this embodiment can be applied to a display portion of an electronic device or the like, and can therefore also be called a display panel or a display device. The light-emitting and receiving device has a configuration in which a light-emitting device is used as a light source and light from the light-emitting device is received by the photoelectric conversion device.

[0405] The light emitting and receiving device of the present embodiment can be a high-resolution or large-sized light emitting and receiving device, and can therefore be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, smartphones, wristwatch-type terminals, tablet terminals, personal digital assistants, and sound reproduction devices.

[0406] FIG. 13A shows a top view of the light emitting and receiving device 720. In FIG.

[0407] 13(A), the light-emitting and receiving device 720 has a structure in which a substrate 710 and a substrate 711 are bonded together. The light-emitting and receiving device 720 also has a display region 701, a circuit 704, and wiring 706. The display region 701 has a plurality of pixels, and as shown in FIG. 13(B), the display region 701 includes a pixel 703(i+1,j) adjacent to a pixel 703(i,j).

[0408] 13A shows an example in which an IC (integrated circuit) 712 is provided on a substrate 710 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like in the light-emitting and receiving device 720. Note that an IC having a scan line driver circuit or a signal line driver circuit, for example, can be used as the IC 712. In FIG. 13A, an IC having a signal line driver circuit is used as the IC 712, and a scan line driver circuit is used as the circuit 704.

[0409] The wiring 706 has a function of supplying signals and power to the display region 701 and the circuit 704. The signals and power are input to the wiring 706 from the outside through a flexible printed circuit (FPC) 713 or are input to the wiring 706 from an IC 712. Note that the light-emitting and receiving device 720 may not include an IC. Alternatively, the IC may be mounted on the FPC by a COF method or the like.

[0410] FIG. 13B shows pixels 703(i,j) and 703(i+1,j) in the display region 701. That is, pixel 703(i,j) can be configured to have multiple types of subpixels having light-emitting devices that emit different colors. Alternatively, in addition to the above, pixel 703(i,j) can be configured to include multiple subpixels having light-emitting devices that emit the same color. For example, a pixel can be configured to have three types of subpixels. Examples of the three subpixels include subpixels of three colors: red (R), green (G), and blue (B), or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of the four subpixels include subpixels of four colors: R, G, B, and white (W), or subpixels of four colors: R, G, B, and Y. Specifically, the pixel 703(i,j) may be configured with a sub-pixel 702B(i,j) that displays blue, a sub-pixel 702G(i,j) that displays green, and a sub-pixel 702R(i,j) that displays red.

[0411] Furthermore, the sub-pixel may have not only a light-emitting device but also a photoelectric conversion device.

[0412] Pixels 703(i,j) shown in Figures 13(C) to 13(F) show examples of various layouts including subpixels 702PS(i,j) having photoelectric conversion devices. Note that the pixel arrangement shown in Figure 13(C) is a stripe arrangement, and the pixel arrangement shown in Figure 13(D) is a matrix arrangement. The pixel arrangement shown in Figure 13(E) has a configuration in which three subpixels (subpixels R, G, and PS) are vertically arranged next to one subpixel (subpixel B). The pixel arrangement shown in Figure 13(F) has a configuration in which three vertically elongated subpixels G, B, and R are horizontally arranged, and below them, subpixel PS and horizontally elongated subpixel IR are horizontally arranged. Although the wavelength of light detected by the subpixel 702PS(i,j) is not particularly limited, it is preferable that the photoelectric conversion device of the subpixel 702PS(i,j) is sensitive to light emitted by the light-emitting device of the subpixel 702R(i,j), subpixel 702G(i,j), subpixel 702B(i,j), or subpixel 702IR(i,j). For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength range.

[0413] 13(F), a subpixel 702IR(i,j) that emits infrared light may be added to the above set to form pixel 703(i,j). Specifically, a subpixel that emits light containing light having a wavelength of 650 nm or more and 1000 nm or less may be used as pixel 703(i,j).

[0414] The arrangement of the sub-pixels is not limited to the configurations shown in Figures 13(B) to 13(F), and various methods can be applied. Examples of the arrangement of the sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0415] Examples of the top surface shape of the sub-pixel include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, as well as polygons with rounded corners, ellipses, circles, etc. The top surface shape of the sub-pixels here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0416] Furthermore, when a pixel has not only a light-emitting device but also a photoelectric conversion device, the pixel has a light-receiving function, so that it is possible to detect contact or proximity of an object while displaying an image. For example, instead of displaying an image using all of the sub-pixels of the light-emitting device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0417] It is preferable that the light-receiving area of ​​the subpixel 702PS(i,j) be smaller than the light-emitting area of ​​the other subpixels. The smaller the light-receiving area, the narrower the imaging range, which makes it possible to suppress blurring in the imaging result and improve resolution. Therefore, by using the subpixel 702PS(i,j), high-definition or high-resolution imaging can be performed. For example, the subpixel 702PS(i,j) can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), faces, etc.

[0418] The subpixel 702PS(i,j) can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel 702PS(i,j) preferably detects infrared light, which enables touch detection even in dark places.

[0419] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the light-emitting / receiving device and the object are in direct contact with each other. A near-touch sensor can detect an object even if the object does not come into contact with the light-emitting / receiving device. For example, a configuration is preferred in which the light-emitting / receiving device can detect an object when the distance between the light-emitting / receiving device and the object is between 0.1 mm and 300 mm, preferably between 3 mm and 50 mm. This configuration enables the light-emitting / receiving device to be operated without the object directly touching it, in other words, it enables the light-emitting / receiving device to be operated in a non-contact (touchless) manner. This configuration reduces the risk of the light-emitting / receiving device becoming dirty or scratched, or enables the object to operate the light-emitting / receiving device without directly touching dirt (e.g., dust, bacteria, or viruses) attached to the light-emitting / receiving device.

[0420] In order to capture high-resolution images, it is preferable that the sub-pixels 702PS(i,j) are provided in all pixels of the light-emitting and receiving device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels 702PS(i,j) do not require high accuracy compared to when capturing images of fingerprints, etc., so they may be provided in only some of the pixels of the light-emitting and receiving device. By making the number of sub-pixels 702PS(i,j) in the light-emitting and receiving device smaller than the number of sub-pixels 702R(i,j), etc., the detection speed can be increased.

[0421] Next, an example of a pixel circuit of a sub-pixel having a light-emitting device will be described with reference to FIG. 14A. The pixel circuit 530 shown in FIG. 14A includes a light-emitting device (EL) 550, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3. A light-emitting diode can be used as the light-emitting device 550. In particular, it is preferable to use the light-emitting device described in Embodiments 1 and 3 as the light-emitting device 550.

[0422] 14A, the transistor M15 has a gate electrically connected to a wiring VG, one of its source and drain electrically connected to a wiring VS, and the other of its source and drain electrically connected to one electrode of a capacitor C3 and the gate of a transistor M16. One of its source and drain is electrically connected to a wiring V4, and the other is electrically connected to an anode of a light-emitting device 550 and one of a source and drain of a transistor M17. The transistor M17 has a gate electrically connected to a wiring MS, and the other of its source and drain is electrically connected to a wiring OUT2. The cathode of the light-emitting device 550 is electrically connected to a wiring V5.

[0423] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light-emitting device 550 can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit 530. The transistor M16 also functions as a drive transistor that controls the current flowing through the light-emitting device 550 depending on the potential supplied to its gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light-emitting device 550 can be controlled depending on the potential. The transistor M17 is controlled by a signal supplied to the wiring MS and has the function of outputting the potential between the transistor M16 and the light-emitting device 550 to the outside via the wiring OUT2.

[0424] Note that it is preferable to use transistors using a metal oxide (oxide semiconductor) for a semiconductor layer in which a channel is formed as the transistors M15, M16, and M17 included in the pixel circuit 530 of FIG. 14(A) and the transistors M11, M12, M13, and M14 included in the pixel circuit 531 of FIG. 14(B).

[0425] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows charge stored in a capacitor connected in series with the transistor to be held for a long period of time. Therefore, it is preferable to use a transistor including an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series with the capacitor C2 or the capacitor C3. Furthermore, by using a transistor including an oxide semiconductor for other transistors as well, manufacturing costs can be reduced.

[0426] Alternatively, the transistors M11 to M17 may be transistors in which silicon is used as a semiconductor in which a channel is formed. In particular, using silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and higher-speed operation is possible.

[0427] Alternatively, a structure may be used in which at least one of the transistors M11 to M17 includes an oxide semiconductor and the remaining transistors include silicon.

[0428] Next, an example of a pixel circuit of a sub-pixel having a photoelectric conversion device will be described with reference to Fig. 14(B). The pixel circuit 531 shown in Fig. 14(B) has a photoelectric conversion device (PD) 560, transistors M11, M12, M13, and M14, and a capacitor C2. Here, an example is shown in which a photodiode is used as the photoelectric conversion device (PD) 560.

[0429] 14B, the anode of the photoelectric conversion device (PD) 560 is electrically connected to the wiring V1, and the cathode is electrically connected to one of the source and drain of the transistor M11. The gate of the transistor M11 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitor C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The gate of the transistor M12 is electrically connected to the wiring RES, and the other of the source and drain is electrically connected to the wiring V2. The source and drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source and drain is electrically connected to one of the source and drain of the transistor M14. The gate of the transistor M14 is electrically connected to the wiring SE, and the other of the source and drain is electrically connected to the wiring OUT1.

[0430] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the photoelectric conversion device (PD) 560 is driven in reverse bias, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of a node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the node changes depending on the current flowing through the photoelectric conversion device (PD) 560. The transistor M13 functions as an amplification transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE and functions as a selection transistor that reads out the output according to the potential of the node to an external circuit connected to the wiring OUT1.

[0431] Note that although the transistors are shown as n-channel transistors in FIGS. 14A and 14B, p-channel transistors can also be used.

[0432] The transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 are preferably formed side by side on the same substrate. In particular, it is preferable to configure the transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 to be mixed and periodically arranged in one region.

[0433] It is also preferable to provide one or more layers having one or both of a transistor and a capacitor element at a position overlapping the photoelectric conversion device (PD) 560 or the light-emitting device (EL) 550. This reduces the effective area occupied by each pixel circuit, enabling a high-definition light-receiving section or display section to be realized.

[0434] Next, an example of a specific structure of a transistor that can be applied to the pixel circuits described with reference to Fig. 14(A) and Fig. 14(B) is shown in Fig. 14(C). Note that a bottom-gate transistor, a top-gate transistor, or the like can be used as the transistor as appropriate.

[0435] 14C includes a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed over, for example, an insulating film 501C. The transistor also includes an insulating film 516 (insulating films 516A and 516B) and an insulating film 518.

[0436] The semiconductor film 508 has a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 has a region 508C between the region 508A and the region 508B.

[0437] The conductive film 504 has a region overlapping with the region 508C, and functions as a first gate electrode.

[0438] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a first gate insulating film.

[0439] The conductive film 512A has either a function as a source electrode or a function as a drain electrode, and the conductive film 512B has the other function as a source electrode or a drain electrode.

[0440] The conductive film 524 can also be used for a transistor. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 524 and the conductive film 504. The conductive film 524 functions as a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.

[0441] The insulating film 516 functions as, for example, a protective film that covers the semiconductor film 508. Specific examples of the insulating film 516 that can be used include a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film.

[0442] The insulating film 518 is preferably formed using a material that has a function of suppressing diffusion of, for example, oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, and the like. Specifically, the insulating film 518 can be formed using, for example, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, or the like. The number of nitrogen atoms contained in silicon oxynitride and aluminum oxynitride is preferably larger than the number of oxygen atoms.

[0443] Note that a semiconductor film to be used for a transistor in a pixel circuit can be formed in the same process as a semiconductor film to be used for a transistor in a driver circuit. For example, a semiconductor film having the same composition as that of a semiconductor film to be used for a transistor in a pixel circuit can be used for the driver circuit.

[0444] Furthermore, a semiconductor containing an element of Group 14 can be used for the semiconductor film 508. Specifically, a semiconductor containing silicon can be used for the semiconductor film 508.

[0445] Furthermore, hydrogenated amorphous silicon can be used for the semiconductor film 508. Alternatively, microcrystalline silicon or the like can be used for the semiconductor film 508. This makes it possible to provide a device with less display unevenness compared to devices (including light-emitting devices, display panels, display devices, and light-emitting and receiving devices) that use polysilicon for the semiconductor film 508. Alternatively, it is easy to increase the size of the device.

[0446] Furthermore, polysilicon can be used for the semiconductor film 508. This allows the field-effect mobility of the transistor to be higher than that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example. Alternatively, the driving capability can be improved compared to that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example. Alternatively, the aperture ratio of a pixel can be improved compared to that of a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.

[0447] Alternatively, the reliability of the transistor can be improved compared to a transistor using hydrogenated amorphous silicon for the semiconductor film 508, for example.

[0448] Alternatively, the temperature required to manufacture the transistor can be lower than that of a transistor using single crystal silicon, for example.

[0449] Alternatively, a semiconductor film used for a transistor in a driver circuit can be formed in the same process as a semiconductor film used for a transistor in a pixel circuit. Alternatively, the driver circuit can be formed over the same substrate as the substrate on which the pixel circuit is formed. Alternatively, the number of components constituting an electronic device can be reduced.

[0450] Furthermore, single crystal silicon can be used for the semiconductor film 508. This allows for higher definition than, for example, a light-emitting device (or display panel) using hydrogenated amorphous silicon for the semiconductor film 508. Alternatively, for example, a light-emitting device with less display unevenness can be provided than, for example, a light-emitting device using polysilicon for the semiconductor film 508. Alternatively, for example, smart glasses or a head-mounted display can be provided.

[0451] Furthermore, metal oxide can be used for the semiconductor film 508. This allows the pixel circuit to retain an image signal for a longer period of time compared to a pixel circuit that uses a transistor with an amorphous silicon semiconductor film. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, and more preferably less than once per minute, while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the electronic device can be reduced. Furthermore, power consumption associated with driving can be reduced.

[0452] An oxide semiconductor can be used for the semiconductor film 508. Specifically, an oxide semiconductor containing indium, an oxide semiconductor containing indium, gallium, and zinc, or an oxide semiconductor containing indium, gallium, zinc, and tin can be used for the semiconductor film 508.

[0453] Note that by using an oxide semiconductor for the semiconductor film, a transistor having a smaller leakage current in an off state than a transistor using amorphous silicon for the semiconductor film can be obtained. Therefore, it is preferable to use a transistor using an oxide semiconductor for the semiconductor film as a switch or the like. Note that a circuit using a transistor using an oxide semiconductor for the semiconductor film as a switch can hold the potential of a floating node for a longer time than a circuit using a transistor using amorphous silicon for the semiconductor film as a switch.

[0454] When an oxide semiconductor is used for the semiconductor film, the light-emitting and receiving device 720 has a structure in which the oxide semiconductor is used for the semiconductor film and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through a transistor and leakage current that may flow between adjacent light-emitting elements (also referred to as lateral leakage current or side leakage current). Furthermore, when an image is displayed on a display device, the viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through a transistor and lateral leakage current between light-emitting elements are extremely low can provide a display with extremely low light leakage (so-called floating black) that may occur during black display (also referred to as true black display).

[0455] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between light-emitting elements (for example, organic layers shared between light-emitting elements, also called common layers) are separated, resulting in a display with no side leakage or extremely little side leakage.

[0456] Next, a cross-sectional view of the light emitting and receiving device will be shown in Fig. 15. Fig. 15 shows a cross-sectional view of the light emitting and receiving device shown in Fig. 13(A).

[0457] The cross-sectional view of FIG. 15 shows a cross-sectional view of a part of the region including the FPC 713 and the wiring 706, and a part of the display region 701 including the pixel 703(i,j).

[0458] 15, the light emitting and receiving device 700 has a functional layer 520 between a first substrate 510 and a second substrate 770. The functional layer 520 includes the transistors (M11, M12, M13, M14, M15, M16, M17) and capacitance elements (C2, C3) described in FIG. 14, as well as wiring (VS, VG, V1, V2, V3, V4, V5) that electrically connect these elements. Note that, in FIG. 15, the functional layer 520 is shown as including a pixel circuit 530X(i,j), a pixel circuit 530S(i,j), and a circuit GD, but is not limited to this.

[0459] Furthermore, the pixel circuits formed in the functional layer 520 (for example, pixel circuits 530X(i,j) and 530S(i,j) shown in FIG. 15) are electrically connected to the light-emitting devices and photoelectric conversion devices formed on the functional layer 520 (for example, light-emitting devices 550X(i,j) and photoelectric conversion devices 550PS(i,j) shown in FIG. 15). Specifically, the light-emitting devices 550X(i,j) are electrically connected to the pixel circuits 530X(i,j) via wiring 591X, and the photoelectric conversion devices 550PS(i,j) are electrically connected to the pixel circuits 530S(i,j) via wiring 591S. Furthermore, an insulating layer 705 is provided on the functional layer 520, the light-emitting devices, and the photoelectric conversion devices, and the insulating layer 705 has the function of bonding the second substrate 770 and the functional layer 520 together.

[0460] Note that a substrate provided with touch sensors arranged in a matrix can be used as the second substrate 770. For example, a substrate provided with a capacitive touch sensor or an optical touch sensor can be used as the second substrate 770. In this way, the light-emitting and receiving device of one embodiment of the present invention can be used as a touch panel.

[0461] Note that the structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0462] (Sixth embodiment) In this embodiment, the structure of an electronic device according to one embodiment of the present invention will be described with reference to FIGS. 16A to 18B. Note that some of the electronic devices described in this embodiment can include a light-emitting and receiving device according to one embodiment of the present invention.

[0463] 16A to 18B are diagrams illustrating the structure of an electronic device of one embodiment of the present invention. FIG. 16A is a block diagram of the electronic device, and FIGS. 16B to 16E are perspective views illustrating the structure of the electronic device. FIGS. 17A to 17E are perspective views illustrating the structure of the electronic device. FIGS. 18A and 18B are perspective views illustrating the structure of the electronic device.

[0464] An electronic device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 16A).

[0465] The arithmetic unit 5210 has a function of receiving operation information and a function of supplying image information based on the operation information.

[0466] The input / output device 5220 has a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function for supplying operation information, and a function for receiving image information. The input / output device 5220 also has a function for supplying detection information, a function for supplying communication information, and a function for receiving communication information.

[0467] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on an operation by the user of the electronic device 5200B.

[0468] Specifically, the input unit 5240 can use a keyboard, hardware buttons, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a gaze input device, a posture detection device, or the like.

[0469] The display portion 5230 has a function of displaying a display panel and image information. For example, the display panel described in Embodiment 4 can be used as the display portion 5230.

[0470] The detection unit 5250 has a function of supplying detection information, for example, a function of detecting the surrounding environment in which the electronic device is used and supplying the detected information.

[0471] Specifically, the detection unit 5250 can use an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like.

[0472] The communication unit 5290 has a function of receiving and supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

[0473] FIG. 16B shows an electronic device having an outer shape that conforms to a cylindrical pillar or the like. An example of such an electronic device is a digital signage device. The display panel of one embodiment of the present invention can be applied to the display portion 5230. Note that the display panel may have a function of changing the display method depending on the illuminance of the usage environment. Furthermore, the display panel has a function of detecting the presence of a person and changing the display content. This allows the display panel to be installed on a pillar of a building, for example. Alternatively, advertisements or notices can be displayed. Alternatively, the display panel can be used for digital signage or the like.

[0474] FIG. 16(C) shows an electronic device that has the function of generating image information based on the trajectory of a pointer used by a user. Examples include an electronic whiteboard, an electronic bulletin board, and an electronic signboard. Specifically, a display panel with a diagonal length of 20 inches or more, preferably 40 inches or more, and more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to form a single display area. Alternatively, multiple display panels can be arranged to form a multi-screen.

[0475] FIG. 16D shows an electronic device that can receive information from another device and display it on the display portion 5230. An example of such an electronic device is a wearable electronic device. Specifically, several options can be displayed, or a user can select some options and send them back to the sender of the information. Alternatively, the electronic device has a function of changing the display method depending on the illuminance of the usage environment. This can reduce the power consumption of the wearable electronic device, for example. Alternatively, an image can be displayed on the wearable electronic device so that the electronic device can be used effectively even in an environment with strong external light, such as outdoors on a sunny day.

[0476] 16(E) shows an electronic device having a display portion 5230 with a curved surface that curves gently along the side surface of the housing. An example of such an electronic device is a mobile phone. The display portion 5230 includes a display panel, which has a function of displaying information on the front, side, top, and back surfaces, for example. This allows information to be displayed not only on the front surface of the mobile phone but also on the side, top, and back surfaces.

[0477] 17A shows an electronic device that can receive information from the Internet and display it on the display portion 5230. An example of such an electronic device is a smartphone. For example, a created message can be checked on the display portion 5230. Alternatively, the created message can be transmitted to another device. Alternatively, the smartphone has a function of changing the display method depending on the illuminance of the usage environment. This can reduce the power consumption of the smartphone. Alternatively, for example, an image can be displayed on the smartphone so that the smartphone can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0478] FIG. 17(B) shows an electronic device in which a remote controller can be used as the input unit 5240. An example is a television system. Alternatively, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Alternatively, a user can be photographed using the detection unit 5250. An image of the user can be transmitted. Alternatively, the user's viewing history can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, a program or video can be displayed based on the recommendation information. Alternatively, the electronic device has a function to change the display method depending on the illuminance of the usage environment, for example. This allows images to be displayed on the television system so that it can be used appropriately even when strong external light shines indoors on a sunny day.

[0479] 17(C) shows an electronic device that can receive learning materials from the Internet and display them on the display unit 5230. One example is a tablet computer. Alternatively, a report can be input using the input unit 5240 and sent to the Internet. Alternatively, the results of corrections or evaluations of the report can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, suitable learning materials can be selected and displayed based on the evaluations.

[0480] For example, an image signal can be received from another electronic device and displayed on the display unit 5230. Alternatively, the display unit 5230 can be used as a sub-display by placing the tablet computer on a stand or the like. This allows images to be displayed on the tablet computer so that the tablet computer can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0481] 17D shows an electronic device having a plurality of display units 5230. An example is a digital camera. For example, an image can be captured by the detection unit 5250 and displayed on the display unit 5230. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, the captured image can be transmitted to the Internet. Alternatively, the electronic device has a function of changing the capture conditions depending on the illuminance of the usage environment. This allows the subject to be displayed on the digital camera so that it can be viewed appropriately even in an environment with strong external light, such as outdoors on a sunny day.

[0482] 17E shows an electronic device that can control another electronic device by using the electronic device of this embodiment as a master while using the other electronic device as a slave. One example is a portable personal computer. For example, part of image information can be displayed on the display unit 5230, and the other part of the image information can be displayed on the display unit of the other electronic device. Alternatively, an image signal can be supplied. Alternatively, information to be written can be obtained from an input unit of the other electronic device using the communication unit 5290. This allows, for example, a portable personal computer to have a wide display area.

[0483] FIG. 18A shows an electronic device having a detection unit 5250 that detects acceleration or orientation. An example is a goggle-type electronic device. Alternatively, the detection unit 5250 can provide information related to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information for the right eye and image information for the left eye based on the user's position or the direction the user is facing. Alternatively, the display unit 5230 has a display area for the right eye and a display area for the left eye. This allows, for example, an image of a virtual reality space that provides an immersive experience to be displayed on the goggle-type electronic device.

[0484] FIG. 18(B) shows an electronic device having a detection unit 5250 that detects an imaging device, acceleration, or orientation. An example is a glasses-type electronic device. Alternatively, the detection unit 5250 can provide information related to the user's position or the direction the user is facing. Alternatively, the electronic device can generate image information based on the user's position or the direction the user is facing. This allows, for example, information to be attached to a real landscape and displayed. Alternatively, an image of an augmented reality space can be displayed on the glasses-type electronic device.

[0485] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. [Example]

[0486] In this example, photoelectric conversion devices (Devices 1 to 4) were fabricated, and the results of evaluating the characteristics thereof will be described.

[0487] The structural formulas of the organic compounds used in Devices 1 to 4 are shown below.

[0488] [ka]

[0489] (Method for fabricating Device 1) As shown in Figure 19(A), device 1 has a structure in which a hole transport layer 912, an active layer 913, a structure 920, an electron transport layer 914, and an electron injection layer 915 are sequentially stacked on a first electrode 901 formed on a glass substrate 900, and a second electrode 903 is stacked on the electron injection layer 915.

[0490] First, a reflective film was formed on a glass substrate 900. Specifically, an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC) was used as a target, and a reflective film was formed to a thickness of 100 nm by a sputtering method. After that, indium oxide-tin oxide (abbreviated as ITSO) containing silicon or silicon oxide was formed by a sputtering method to form a first electrode 901. The film thickness was 100 nm, and the electrode area was 4 mm 2 (2mm x 2mm).

[0491] Next, as a pretreatment for forming a device on the substrate, the substrate surface was washed with water and baked at 200°C for 1 hour. -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum-baked at 180°C for 60 minutes in the heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool naturally to 30°C or below.

[0492] Next, the substrate on which the first electrode 901 was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus so that the surface on which the first electrode 901 was formed faced downward, and N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) represented by the above structural formula (i) was evaporated onto the first electrode 901 by an evaporation method using resistance heating to a film thickness of 40 nm, thereby forming a hole transport layer 912.

[0493] Next, on the hole transport layer 912, 4,4'-(2,3-dicyanodibenzo[f,h]quinoxaline-7,10-diyl)bis(triphenylamine) (abbreviation: TPA-DCPP) represented by the above structural formula (ii) and C60 fullerene represented by the above structural formula (iii) were co-deposited to a thickness of 60 nm in a weight ratio of 0.8:0.2 (=TPA-DCPP:C60) to form an active layer 913.

[0494] Next, diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA) represented by the above structural formula (iv) was evaporated onto the active layer 913 to a thickness equivalent to 15 nm, thereby forming a structure 920.

[0495] Next, 2,2′-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) represented by the above structural formula (v) was evaporated onto the structure 920 to a thickness of 20 nm, thereby forming the electron transport layer 914 .

[0496] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-deposited on the electron transport layer 914 to a thickness of 1.5 nm so that the volume ratio was 1:0.5, to form the electron injection layer 915 .

[0497] Next, a second electrode 903 was formed on the electron injection layer 915 by co-evaporating Ag and Mg to a thickness of 15 nm in a volume ratio of Ag:Mg = 1:0.1. Finally, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (vi) was evaporated to a thickness of 80 nm as a capping layer, thereby producing device 1. The second electrode 903 is a semi-transparent / semi-reflective electrode that has the functions of reflecting and transmitting light.

[0498] Next, a method for fabricating Devices 2 to 4 will be described.

[0499] (Method for fabricating Device 2) Device 2 was fabricated in the same manner as Device 1, except that the structure 920 in Device 1 was not formed.

[0500] (Method for fabricating Device 3) Device 3 was fabricated in the same manner as Device 1, except that the electron transport layer 914 in Device 1 was not formed.

[0501] (Method for fabricating Device 4) Device 4 was fabricated in the same manner as device 1, except that structure 920 and electron transport layer 914 in device 1 were not formed.

[0502] The device structures of Device 1 to Device 4 are summarized in the table below.

[0503] [Table 1]

[0504] The LUMO levels of the materials used in the active layer, structure, and electron transport layer of Devices 1 to 4 are summarized in the table below. The LUMO levels were measured by cyclic voltammetry (CV). An electrochemical analyzer (manufactured by BAS Inc., model number: ALS Model 600A or 600C) was used for the measurements. As such, Devices 1 to 4 are photoelectric conversion devices in which the LUMO levels of the acceptor material in the active layer and the material in the electron transport layer differ greatly.

[0505] [Table 2]

[0506] Next, the current density-voltage characteristics of Devices 1 to 4 fabricated by the above-described fabrication method were measured and the results are shown in Figures 20 and 21. The measurements were performed using monochromatic light with a wavelength λ of 550 nm at an irradiance of 12.5 μW / cm 2 The measurements were carried out under illumination (Fig. 20) and in the dark (Fig. 21).

[0507] It can be seen that Device 2, which does not have structure 920 but has electron transport layer 914, has a conventional configuration, but exhibits a significantly increased driving voltage. It can also be seen that Device 4, which does not have either structure 920 or electron transport layer 914, exhibits a significantly reduced current density, resulting in a significant deterioration in the characteristics of the photoelectric conversion device.

[0508] On the other hand, Device 1 and Device 3, in which structure 920 was provided on active layer 913, showed good results in both driving voltage and current density. Device 1, in which both structure 920 and electron transport layer 914 were formed, showed particularly good characteristics because the active layer 913 and the electrode (electron injection layer) were not in direct contact with each other, and therefore the decrease in current density could be suppressed. [Example]

[0509] In this example, photoelectric conversion devices (devices 10 to 13) were fabricated, and the results of evaluating their characteristics will be described.

[0510] The structural formulas of the organic compounds used in Devices 10 to 13 are shown below.

[0511] [ka]

[0512] (Method of Fabricating Devices 10A to 10D) As shown in Figure 19(A), the device 10 has a structure in which a hole transport layer 912, an active layer 913, a structure 920, an electron transport layer 914, and an electron injection layer 915 are sequentially stacked on a first electrode 901 formed on a glass substrate 900, and a second electrode 903 is stacked on the electron injection layer 915.

[0513] First, a reflective film was formed on a glass substrate 900. Specifically, an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC) was used as a target, and a reflective film was formed to a thickness of 100 nm by a sputtering method. After that, indium oxide-tin oxide (abbreviated as ITSO) containing silicon or silicon oxide was formed by a sputtering method to form a first electrode 901. The film thickness was 100 nm, and the electrode area was 4 mm 2 (2mm x 2mm).

[0514] Next, as a pretreatment for forming a device on the substrate, the substrate surface was washed with water and baked at 200°C for 1 hour.-4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum-baked at 180°C for 60 minutes in the heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool naturally to 30°C or below.

[0515] Next, the substrate on which the first electrode 901 was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus so that the surface on which the first electrode 901 was formed faced downward, and N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF) represented by the above structural formula (i) was evaporated onto the first electrode 901 by an evaporation method using resistance heating to a film thickness of 40 nm, thereby forming a hole transport layer 912.

[0516] Next, on the hole transport layer 912, 4,4'-(2,3-dicyanodibenzo[f,h]quinoxaline-7,10-diyl)bis(triphenylamine) (abbreviation: TPA-DCPP) represented by the above structural formula (ii) and C60 fullerene represented by the above structural formula (iii) were co-deposited to a thickness of 60 nm in a weight ratio of 0.8:0.2 (=TPA-DCPP:C60) to form an active layer 913.

[0517] Next, pyrazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile (abbreviation: PPDN) represented by the above structural formula (vii) was deposited on the active layer 913 to a thickness equivalent to 1 nm, thereby forming a structure 920.

[0518] Next, 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P) represented by the above structural formula (v) was evaporated onto the structure 920 to a thickness of 10 nm for device 10A, 20 nm for device 10B, 30 nm for device 10C, and 40 nm for device 10D to form an electron transport layer 914.

[0519] Next, lithium fluoride (LiF) and ytterbium (Yb) were co-deposited on the electron transport layer 914 to a thickness of 1.5 nm so that the volume ratio was 1:0.5, to form the electron injection layer 915 .

[0520] Next, a second electrode 903 was formed on the electron injection layer 915 by co-evaporating Ag and Mg to a thickness of 15 nm in a volume ratio of Ag:Mg = 1:0.1. Finally, 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (vi) was evaporated as a capping layer to a thickness of 80 nm, thereby producing Devices 10A to 10D. The second electrode 903 is a semi-transmissive / semi-reflective electrode that has the functions of reflecting and transmitting light.

[0521] Next, a method for fabricating devices 11A to 11D, devices 12A to 12D, and devices 13A to 13D will be described.

[0522] (Method of Fabricating Devices 11A to 11D) Devices 11A to 11D were fabricated in the same manner as devices 10A to 10D, except that structures 920 in devices 10A to 10D were formed to a thickness equivalent to 5 nm.

[0523] (Method of Fabricating Devices 12A to 12D) Devices 12A to 12D were fabricated in the same manner as devices 10A to 10D, except that structures 920 in devices 10A to 10D were formed to a thickness equivalent to 15 nm.

[0524] (Method of Fabricating Devices 13A to 13D) Devices 13A to 13D were fabricated in the same manner as devices 10A to 10D, except that structures 920 in devices 10A to 10D were not formed.

[0525] The device structures of the above-mentioned devices 10A to 10D, 11A to 11D, 12A to 12D, and 13A to 13D are summarized in the table below.

[0526] [Table 3]

[0527] The LUMO levels of the materials used in the active layers, structures, and electron transport layers of Devices 10A to 10D, Devices 11A to 11D, Devices 12A to 12D, and Devices 13A to 13D are summarized in the table below. The LUMO levels were measured by cyclic voltammetry (CV). An electrochemical analyzer (manufactured by BAS Inc., model number: ALS Model 600A or 600C) was used for the measurements. Thus, Devices 10A to 10D, Devices 11A to 11D, Devices 12A to 12D, and Devices 13A to 13D are photoelectric conversion devices in which the LUMO levels of the acceptor material in the active layer and the material in the electron transport layer are significantly different.

[0528] [Table 4]

[0529] 22(A) to 22(D) show the results of measuring the current density-voltage characteristics of Devices 10A to 10D, 11A to 11D, 12A to 12D, and 13A to 13D fabricated by the above-described fabrication method. The measurements were performed using monochromatic light with a wavelength λ of 550 nm at an irradiance of 12.5 μW / cm. 222(A) shows the results for devices 10A, 11A, 12A, and 13A, each having an electron transport layer 914 with a thickness of 10 nm. FIG. 22(B) shows the results for devices 10B, 11B, 12B, and 13B, each having an electron transport layer 914 with a thickness of 20 nm. FIG. 22(C) shows the results for devices 10C, 11C, 12C, and 13C, each having an electron transport layer 914 with a thickness of 30 nm. FIG. 22(D) shows the results for devices 10D, 11D, 12D, and 13D, each having an electron transport layer 914 with a thickness of 40 nm.

[0530] 22(B) to 22(D) show that the thicker the electron transport layer 914 is, the higher the driving voltage of devices 13B to 13D, which do not have the structure 920, is, but the increase in driving voltage is suppressed by providing the structure 920. On the other hand, in the result of FIG. 22(A), where the thickness of the electron transport layer 914 is 10 nm, there is no change in characteristics with or without the structure 920. This suggests that electrons flow due to the tunneling effect caused by the thin film thickness of the electron transport layer 914.

[0531] From this, it was found that by forming the structure 920, the film thickness of the electron transport layer 914 can be thinned to about 10 nm or less, or by discontinuing the electron transport layer 914, a photoelectric conversion device with good characteristics can be obtained even in a photoelectric conversion device that shares a carrier transport layer with a light-emitting device.

[0532] Next, cross-sectional SEM (Scanning Electron Microscope) photographs of devices 10A, 11A, and 12A and photographs taken with a differential interference microscope are shown in FIG.

[0533] As described above, in Devices 10A, 11A, and 12A, in which structures were formed using PPDN, protrusions of approximately 100 nm to 200 nm were formed, and it was found that the number of structures increased rather than their size as the amount of film formation increased. It was also found that the top of the structures was covered with the second electrode. On the other hand, it was found that such protrusions were not formed in Device 13A, in which no structures were formed. [Example]

[0534] In this example, photoelectric conversion devices (devices 20 to 22) were fabricated, and the results of evaluating their characteristics will be described.

[0535] The structural formulas of the organic compounds used in the devices 20 to 22 are shown below.

[0536] [ka]

[0537] (Method of Making Device 20) As shown in Figure 19(B), device 20 has a structure in which a hole injection layer 911, a hole transport layer 912, an active layer 913, a structure 920, an electron transport layer 914, and an electron injection layer 915 are sequentially stacked on a first electrode 901 formed on a glass substrate 900, and a second electrode 903 is stacked on electron injection layer 915.

[0538] First, a reflective film was formed on a glass substrate 900. Specifically, an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC) was used as a target, and a reflective film was formed to a thickness of 100 nm by a sputtering method. After that, indium oxide-tin oxide (abbreviated as ITSO) containing silicon or silicon oxide was formed by a sputtering method to form a first electrode 901. The film thickness was 100 nm, and the electrode area was 4 mm 2 (2mm x 2mm).

[0539] Next, as a pretreatment for forming a device on the substrate, the substrate surface was washed with water and baked at 200°C for 1 hour. -4 The substrate was placed in a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum-baked at 180°C for 60 minutes in the heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool naturally to 30°C or below.

[0540] Next, the substrate on which the first electrode 901 was formed was fixed to a substrate holder provided in a vacuum evaporation apparatus so that the surface on which the first electrode 901 was formed faced downward. N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) represented by the above structural formula (viii) and an electron acceptor material (abbreviation: OCHD-003) containing fluorine and having a molecular weight of 672 were co-deposited on the first electrode 901 by a evaporation method using resistance heating to a thickness of 11 nm so as to have a weight ratio of 1:0.1 (=BBABnf:OCHD-003), thereby forming a hole injection layer 911.

[0541] Thereafter, BBABnf was evaporated to a thickness of 40 nm to form a hole transport layer 912.

[0542] On the hole transport layer 912, rubrene represented by the above structural formula (ix) and N,N'-bis(2-ethylhexyl)-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: EtHex-PTCDI) represented by the above structural formula (x) were co-deposited to a thickness of 60 nm so that the weight ratio was 0.5:0.5, to form an active layer 913.

[0543] After that, pyrazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile (abbreviation: PPDN) represented by the above structural formula (vii) was vapor-deposited on the active layer 913 to a film thickness equivalent to 15 nm, thereby forming a structure 920.

[0544] Next, 20 nm of 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) represented by the above structural formula (xi) and 20 nm of 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) represented by the above structural formula (xii) were sequentially evaporated onto the structure 920 to form an electron transport layer 914.

[0545] On the electron transport layer 914, lithium fluoride (LiF) was evaporated to a thickness of 1 nm to form an electron injection layer 915.

[0546] Finally, a second electrode 903 was formed on the electron injection layer 915 by co-evaporating Ag and Mg to a thickness of 10 nm in a volume ratio of Ag:Mg=3:0.3, and 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (vi) was evaporated as a capping layer to a thickness of 80 nm, thereby producing device 20. The second electrode 903 is a semi-transmissive / semi-reflective electrode that has the functions of reflecting and transmitting light.

[0547] Next, a method for fabricating the device 21 and the device 22 will be described.

[0548] (Method for fabricating device 21) Device 21 was fabricated in the same manner as device 20, except that the material constituting structure 920 in device 20 was changed to diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA) represented by the above structural formula (iv).

[0549] (Method of fabricating device 22) Device 22 was fabricated in the same manner as device 20, except that structure 920 in device 20 was formed by co-evaporation of PPDN and HATNA (weight ratio 1:1).

[0550] The device structures of the above devices 20 to 22 are summarized in the table below.

[0551] [Table 5]

[0552] The LUMO levels of the materials used in the active layer, structure, and electron transport layer of Devices 20 to 22 are summarized in the table below. The LUMO levels were measured by cyclic voltammetry (CV) or photoelectron spectroscopy. An electrochemical analyzer (manufactured by BAS Inc., model number: ALS Model 600A or 600C) or a photoelectron spectrometer (manufactured by Riken Keiki Co., Ltd., AC-3) was used for the measurements. Thus, Devices 20 to 22 are photoelectric conversion devices in which the LUMO levels of the acceptor material in the active layer and the material in the electron transport layer differ significantly.

[0553] [Table 6]

[0554] Next, the current density-voltage characteristics of devices 20 to 22 fabricated by the above fabrication method were measured and the results are shown in Figures 24 and 25. The measurements were performed using monochromatic light with a wavelength λ of 550 nm and an irradiance of 12.5 μW / cm 2 The measurements were carried out under illumination (Fig. 24) and in the dark (Fig. 25).

[0555] 24 and 25 show that the characteristics of device 22, in which PPDN and HATNA were co-deposited, are worse than those of device 20 and device 21, in which PPDN and HATNA were used alone as structural materials, respectively.

[0556] 26(A) to 26(C) show micrographs of devices 20 to 22. In Fig. 26, protrusions due to the structure are visible in devices 20 and 21, whereas such shapes are not observed in device 22. It is thought that device 22 did not form a protrusion structure because of its increased amorphous nature due to the mixed film of PPDN and HATNA.

[0557] As described above, it was found that in the devices 20 and 21, which are photoelectric conversion devices according to an embodiment of the present invention, a lower voltage was achieved by forming a structure having a convex structure. [Explanation of symbols]

[0558] 10 First electrode / hole injection layer 11 Hole transport layer 12 donors 13 Acceptor 14a Electron transport layer 14b Structure 15 Electron injection layer / second electrode 101 first electrode 102 second electrode 200 Photoelectric conversion devices 201 First electrode 202 Second electrode 203 Photoelectric conversion layer 211 First carrier injection layer 212 First carrier transport layer 213 Active layer 214 Second Carrier Transport Layer 215 Second carrier injection layer 220 Structure 103 EL layer 103a EL layer 103b EL layer 103B EL layer 103G EL layer 103R EL layer 103PS photoelectric conversion layer 104B Hole injection / transport layer 104G Hole injection / transport layer 104R Hole injection / transport layer 104PS First Transport Layer 105B Light-emitting layer 105G light-emitting layer 105R luminous layer 105PS active layer 107 Insulating layer 107B Insulating layer 107BG Insulation layer 107PS insulating layer 108B Electron transport layer 108G electron transport layer 108R Electron transport layer 108PS Second Transport Layer 109 Electron injection layer 110B Sacrificial layer 110G sacrificial layer 110R sacrificial layer 110PS sacrificial layer 111 Hole injection layer 111a Hole injection layer 111b Hole injection layer 112 Hole transport layer 112a Hole transport layer 112b hole transport layer 113 Light-emitting layer 113a Light-emitting layer 113b Light-emitting layer 113c Light-emitting layer 114 Electron transport layer 114a Electron transport layer 114b Electron transport layer 115 Electron injection layer 115a Electron injection layer 115b Electron injection layer 501C insulating film 501D insulating film 504 Conductive film 506 Insulating film 508 Semiconductor film 508A area 508B area 508C area 510 first substrate 512A Conductive film 512B Conductive film 516 Insulating film 516A Insulating film 516B insulating film 518 Insulating film 520 Functional Layer 524 Conductive film 528 Bulkhead 530 pixel circuit 531 Pixel Circuit 550 Light-emitting devices 550B Light Emitting Device 550G Light Emitting Device 550R Light Emitting Device 550PS photoelectric conversion device 550X Light Emitting Device 551B Electrode 551C connecting electrode 551G electrode 551R electrode 551PS electrode 552 Electrode 580 Gap 591S wiring 591X wiring 700 Light receiving and emitting device 701 Display area 702B(i,j) subpixel 702G(i,j) subpixel 702R(i,j) subpixel 702IR(i,j) subpixel 702PS(i,j) subpixel 703(i,j), 703(i+1,j) pixels 704 circuits 705 Insulation Layer 706 Wiring 710 board 711 Circuit Board 712 IC 713 FPC 720 Light receiving and emitting device 800 boards 801a electrode 801b electrode 802 Electrode 803a EL layer 803b Photoelectric conversion layer 805a Light-emitting devices 805b Photoelectric conversion device 810 Light receiving and emitting device 900 glass substrate 901 First electrode 903 Second electrode 911 Hole injection layer 912 Hole transport layer 913 Active layer 914 Electron transport layer 915 Electron injection layer 920 Structure 5200B Electronic equipment 5210 Arithmetic unit 5220 I / O device 5230 Display section 5240 input section 5250 Detection unit 5290 Communications Department

Claims

1. It comprises a first electrode, a second electrode, and an organic compound layer between the first electrode and the second electrode. The organic compound layer has a first layer, A structure having a convex shape is provided between the first layer and the second electrode. A photoelectric conversion device in which the structure has a first organic compound.

2. In claim 1, A photoelectric conversion device in which the first layer has an active layer.

3. In claim 2, A photoelectric conversion device in which the structure has a shape that satisfies either or both of the following: a width of 30 nm or more, or a height of 30 nm or more.

4. In claim 3, The density of the structure in the region where the first electrode, the active layer, and the second electrode overlap is 0.04 particles / μm ２ That concludes the description of the photoelectric conversion device.

5. In claim 2, The aforementioned organic compound layer further comprises a second layer, The region in which the first electrode, the first layer, the structure, the second layer, and the second electrode are stacked, A photoelectric conversion device comprising both the region in which the first electrode, the first layer, the second layer, and the second electrode are stacked.

6. In any one of claims 2 to 5, A photoelectric conversion device in which the LUMO level of the first organic compound is between -4.5 eV and -3.0 eV.

7. In any one of claims 2 to 5, The active layer has a second organic compound, The LUMO level of the first organic compound is higher than the LUMO level of the second organic compound. A photoelectric conversion device in which the difference between the LUMO level of the first organic compound and the LUMO level of the second organic compound is 0.5 eV or less.

8. A photoelectric conversion device according to any one of claims 2 to 5, A light-emitting device and a light-receiving device having a light-emitting device.

9. A photoelectric conversion device according to any one of claims 2 to 4, It has a light-emitting device, The organic compound layer in the photoelectric conversion device further has a second layer, The second layer is located between the first layer and the second electrode, and between the structure and the second electrode. The second layer has a third organic compound that has electron transport properties. The light-emitting device comprises a third electrode, a fourth electrode, a light-emitting layer and a third layer located between the third electrode and the fourth electrode, The third layer is located between the light-emitting layer and the fourth electrode. The third layer has a fourth organic compound having electron transport properties, A light-receiving device in which the third organic compound and the fourth organic compound are the same organic compound.

10. In claim 9, The region in which the first electrode, the first layer, the structure, the second layer, and the second electrode are stacked, A light-receiving device comprising both the region in which the first electrode, the first layer, the second layer, and the second electrode are stacked.

11. In claim 9, A light-receiving device in which the second electrode and the fourth electrode are made of a continuous conductive material.

12. In claim 9, The configuration of the photoelectric conversion device and the light-emitting device is as follows: A light-receiving device that is substantially identical to the above except for the configuration of the active layer and the light-emitting layer, and the presence or absence of the above structure.

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