Deposition apparatus, detection apparatus, and control method for deposition apparatus

Abstract

To provide a technique for detecting the state of the surface of an electrostatic chuck that attracts and holds a substrate in a deposition apparatus.SOLUTION: A deposition apparatus is used to deposit a film on a substrate, and has an electrostatic chuck having a suction surface to attract a substrate and a detection means to detect the state of the suction surface to which the substrate is not attracted.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus, a detection apparatus, and a method for controlling the film forming apparatus. [Background technology]

[0002] In recent years, flat panel display devices such as organic electroluminescence (EL) display devices have been used as display screens for monitors, televisions, smartphones, etc. The panel of an organic EL display device has a structure in which an organic layer that emits light is formed between two opposing electrodes (cathode electrode and anode electrode). When forming an organic EL display panel using a film deposition device, the peripheral part of the substrate is held by a substrate holder placed in the chamber of the film deposition device, and an evaporation source installed at the bottom of the chamber is heated to release a metal or organic evaporation material, which is then evaporated onto the underside of the substrate through a mask. However, as the substrate size increases, the central part of the substrate is more likely to bend due to its own weight, which may affect the evaporation accuracy.

[0003] In order to reduce the bending of the substrate, a technique for holding the substrate using an electrostatic chuck (ESC) has been proposed. In Patent Document 1 (JP 2019-117926 A), an electrostatic chuck is provided to face the upper surface of the substrate, and the substrate is held by applying an adsorption voltage to the electrostatic chuck while the electrostatic chuck is in contact with or close to the substrate. This reduces the bending of the substrate when it is held. Patent Document 1 also discloses that a sensor is used to detect the adsorption state of the substrate to the electrostatic chuck to measure the degree of adhesion between the electrostatic chuck and the substrate, and film formation is performed with the electrostatic chuck and the substrate in close contact with each other. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-117926 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, if foreign matter is attached to the surface of the electrostatic chuck, the electrostatic chuck may not be able to properly attract the substrate. For example, if an electrostatic chuck is used to which a conductive material such as a deposition material is attached, the desired attracting force may not be obtained even when an attracting voltage is applied, and the degree of adhesion between the electrostatic chuck and the substrate may decrease. In addition, if the substrate is attracted while particles generated in the chamber are attached to the electrostatic chuck surface, the substrate may be damaged. Therefore, it is required to inspect the condition of the surface of the electrostatic chuck and detect the presence or absence of foreign matter attached thereto.

[0006] The present invention has been made in view of the above-mentioned problems, and has an object to provide a technique for detecting the surface condition of an electrostatic chuck that attracts and holds a substrate in a film formation apparatus. [Means for solving the problem]

[0007] The present invention employs the following configuration. A film forming apparatus for forming a film on a substrate, an electrostatic chuck having an adsorption surface for adsorbing the substrate; a detection means for detecting a state of the attraction surface when the substrate is not being attracted to the attraction surface; The film forming apparatus is characterized by comprising: The present invention also employs the following configuration. A detection device to be disposed in a film formation apparatus that forms a film on a substrate attracted by an attraction surface of an electrostatic chuck, A detection means is provided for detecting a state of the attraction surface when the substrate is not being attracted to the attraction surface. The detection device is characterized by the above. The present invention also employs the following configuration. A method for controlling a film forming apparatus that forms a film on a substrate attracted to an attracting surface of an electrostatic chuck, comprising: The detection means detects a state of the attraction surface where the substrate is not being attracted. The present invention relates to a method for controlling a film forming apparatus. Effect of the Invention

[0008] According to the present invention, it is possible to provide a technique for detecting the surface condition of an electrostatic chuck that attracts and holds a substrate in a film forming apparatus. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a schematic plan view showing a configuration of a film forming apparatus; [Diagram 2] Cross-sectional view showing the internal configuration of the film formation chamber [Diagram 3] Cross-sectional view showing the relationship between adhesion of foreign matter to an electrostatic chuck and the chucking force [Figure 4] A block diagram for explaining capacitance detection in the first embodiment. [Diagram 5] A block diagram for explaining capacitance detection in the second embodiment. [Figure 6] FIG. 13 is a diagram for explaining the configuration of an electrostatic chuck in the third embodiment. [Figure 7] FIG. 13 is a diagram for explaining a configuration of an electrostatic chuck in a modified example of the third embodiment. [Figure 8] FIG. 13 is a diagram for explaining detection of adhesion of foreign matter in the fourth embodiment. [Figure 9] FIG. 13 is a diagram for explaining a moving mechanism in the fourth embodiment. [Figure 10] FIG. 13 is a diagram for explaining detection of adhesion of foreign matter in the fifth embodiment. [Figure 11] FIG. 23 is a diagram for explaining detection of adhesion of foreign matter in the sixth embodiment. [Figure 12] 1A to 1C are diagrams illustrating a method for manufacturing an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] The following describes in detail the embodiments of the present invention. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the device in the following description are not intended to limit the scope of the present invention, unless otherwise specified.

[0011] The present invention is suitable for a film formation apparatus that forms a thin film of a film formation material on a surface of a film formation target such as a substrate by deposition or sputtering. The present invention can be understood as an electrostatic chuck, a detection apparatus, a substrate holding apparatus, a film formation apparatus, and a detection method or control method using these apparatuses. The present invention can also be understood as an electronic device manufacturing apparatus and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program for causing a computer to execute the detection method or control method, or a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer.

[0012] In the present invention, any material can be used for the substrate, such as glass, resin, metal, silicon, etc. Any material can be used for the film formation, such as organic materials and inorganic materials (metals, metal oxides). In the following description, the term "substrate" includes substrate materials on whose surfaces one or more films have already been formed. The technology of the present invention is typically applied to manufacturing equipment for electronic devices and optical components. In particular, it is suitable for organic electronic devices, such as organic EL displays equipped with organic EL elements and organic EL display devices using the same. The present invention can also be used for thin-film solar cells and organic CMOS image sensors.

[0013] <Example 1> (Device configuration) 1 is a plan view showing a schematic configuration of a film forming apparatus 1. Here, a manufacturing line for organic EL displays will be described. When manufacturing an organic EL display, a substrate of a given size is carried into the manufacturing line, and after the organic EL and metal layers are formed, post-processing steps such as cutting the substrate are carried out.

[0014] The film formation apparatus 1 includes a transfer chamber 130 disposed in the center, and a plurality of film formation chambers 110 (110a to 110d) and a mask stock chamber 120 (120a, 120b) disposed around the transfer chamber 130. The film formation chamber 110 includes a chamber in which a film formation process is performed on a substrate 10. The mask stock chamber 120 stores masks before and after use. A transfer robot 140 installed in the transfer chamber 130 transfers the substrate S and mask M into and out of the transfer chamber 130. The transfer robot 140 is, for example, a robot having a robot hand for holding the substrate S and mask M attached to an articulated arm.

[0015] The pass chamber 150 transports the substrate S flowing from the upstream side in the substrate transport direction to the transport chamber 130. The buffer chamber 160 transports the substrate S, for which the film formation process in the transport chamber 130 has been completed, to another film formation cluster on the downstream side. When the transport robot 140 receives the substrate S from the pass chamber 150, it transports it to one of the multiple film formation chambers 110. The transport robot 140 also receives the substrate S, for which the film formation process has been completed, from the film formation chamber 110 and transports it to the buffer chamber 160.

[0016] 1 constitutes one film formation cluster, and other film formation clusters can be connected to the upstream or downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided further upstream of the pass chamber 150 and further downstream of the buffer chamber 160. Each chamber, such as the film formation chamber 110, the mask stock chamber 120, the transfer chamber 130, the buffer chamber 160, and the swirl chamber 170, is maintained in a high vacuum state during the manufacturing process.

[0017] The film forming materials in the film forming chambers 110a to 110d of the film forming apparatus 1 may be the same or different. For example, a film forming source of a different film forming material may be arranged in each of the film forming chambers 110a to 110d, and a laminated structure may be formed while the substrate S moves in sequence through the film forming chambers 110a to 110d. Alternatively, a film forming source of the same film forming material may be arranged in the film forming chambers 110a to 110d, so that films may be formed in parallel on the substrates S. Alternatively, a first film forming material may be arranged in the film forming chambers 110a and 110c, and a second film forming material may be arranged in the film forming chambers 110b and 110d, and the first layer may be formed in the film forming chamber 110a or 110c, and then the second layer may be formed in the film forming chamber 110b or 110d.

[0018] Depending on the type of electrostatic chuck, the force of adsorption of the substrate can be increased when a conductor is attached to the substrate. In such a case, the electrostatic chuck can be effectively adsorbed when a thin film of a metal material that will become an electrode layer has already been formed in the region of the substrate where the organic EL element is to be formed (typically the center of the substrate). For example, when an electrode layer is formed on a substrate in the deposition chamber 110a, and organic layers are sequentially formed in the deposition chambers 110b to 110d, it is effective to place electrostatic chucks in the deposition chambers 110b to 110d.

[0019] (Film forming chamber) 2 is a cross-sectional view showing the internal configuration of the film formation chamber 110. In the film formation chamber 110, a series of film formation processes are performed, such as receiving the substrate S and mask M from the transfer robot 140, transferring the substrate S and mask M to the transfer robot 140, aligning the substrate S and mask M relative to each other, fixing the substrate S to the mask M, and forming a film. In the following description, an XYZ Cartesian coordinate system is used in which the vertical direction is the Z direction, and rotation around the Z axis is represented by θ.

[0020] The film forming chamber 110 includes a chamber 200. The inside of the chamber 200 is kept in vacuum during film formation. The chamber 200 is maintained in an atmosphere of a gas such as nitrogen or an inert gas such as nitrogen gas. An electrostatic chuck C, a substrate support 210, a mask table 221, and an evaporation source 240 (film formation source) are provided inside the chamber 200.

[0021] The mask M has an opening pattern corresponding to the thin film pattern to be formed on the substrate. For example, a metal mask in which a metal foil on which a pattern is formed is supported by a frame can be used as the mask M. The mask M is placed on a mask table 221. In the configuration of this embodiment, the substrate S is positioned and placed on the mask, and then film formation is performed.

[0022] The substrate support part 210 has a plurality of claw-shaped supports 210a for receiving the substrate S transferred into the film formation chamber. The electrostatic chuck C is a substrate holding means in the film formation chamber, and attracts and holds the substrate S supported by the substrate support part 210 by electrostatic force. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (the surface on which a film is to be formed).

[0023] A cooling member may be provided inside or on top of the electrostatic chuck C to suppress a rise in temperature of the substrate S during film formation and prevent alteration or deterioration of the organic material. The substrate support part 210 may have a pressing tool corresponding to the support tool 210a. By sandwiching the end of the substrate S between the support tool 210a and the pressing tool, the substrate S can be held not only by the electrostatic chuck C but also by the substrate support part 210, making the substrate S more stable. A magnet may be provided on the top of the electrostatic chuck C to attract the mask M.

[0024] The evaporation source 240 is a film forming means including a container such as a crucible for accommodating an evaporation material, a heater, a shutter, a driving mechanism, an evaporation rate monitor, etc. The film forming source is not limited to an evaporation source, and a sputtering device may be used.

[0025] An electrostatic chuck actuator 252 and an alignment stage 280 are provided at the upper outer side of the chamber 200. The electrostatic chuck actuator 252 drives the electrostatic chuck C in the Z-axis direction via a shaft or the like to raise and lower it. This changes the relative distance between the substrate S and the mask M in a direction intersecting a plane along the film-forming surface of the substrate S. The electrostatic chuck actuator 252 is composed of a motor and a ball screw, a motor and a linear guide, or the like. The electrostatic chuck C may be considered to be a substrate holding device, or the electrostatic chuck C and the power supply 290 may be considered to be a substrate holding device together. The control unit 270 may also be considered to be included in the substrate holding device. The electrostatic chuck actuator 252 may also be considered to be included in the substrate holding device.

[0026] When the electrostatic chuck C holds the substrate S supported by the substrate support part 210, the electrostatic chuck actuator 252 first lowers the electrostatic chuck C to bring the electrostatic chuck C into contact with or sufficiently close to the substrate S. Then, the control part 270 controls the power supply 290 to apply a predetermined attracting voltage to the electrode embedded in the electrostatic chuck C. As a result, the substrate S is held by the electrostatic chuck C.

[0027] Then, during alignment, the electrostatic chuck actuator 252 further lowers the electrostatic chuck C to bring the substrate S closer to the mask M. Then, the alignment stage 280 performs alignment. Then, during film formation, the evaporation source 240 releases a film formation material. When film formation is completed, the electrostatic chuck actuator 252 raises the electrostatic chuck C to transfer the substrate S on which the film has been formed to the transfer robot. Then, the voltage applied to the electrostatic chuck C is set to a predetermined peeling voltage (e.g., 0 V) ​​to release the substrate from its hold.

[0028] The alignment stage 280 is an alignment means for moving the substrate S in the XY directions and rotating it in the θ direction. An alignment stage 280, which adjusts the relative position of the substrate S and the mask M in the above plane, includes a chamber fixing part 281 that is connected and fixed to the chamber 200, an actuator part 282 for performing XYθ movement, and a connection part 283 that is connected to the electrostatic chuck C.

[0029] The actuator section 282 moves the substrate S in the X and Y directions and rotates it in the θ direction in accordance with a control signal transmitted from the control section 270. The actuator section 282 may be an actuator in which an X actuator, a Y actuator, and a θ actuator are stacked. Alternatively, a UVW type actuator in which a plurality of actuators work together may be used. Note that, although the present embodiment is configured to adjust the position of the substrate S, it may also be configured to adjust the position of the mask M or to adjust both the substrate S and the mask M, as long as the substrate S and the mask M can be aligned relative to each other.

[0030] A camera 261 that performs optical imaging and generates image data is provided at the upper outside of the chamber 200. The camera 261 captures images through a vacuum sealing window provided in the chamber 200. In this embodiment, a plurality of cameras 261 are provided corresponding to the four corners of the substrate S. Each camera 261 is disposed so that the imaging range includes a substrate alignment mark provided at a corner of the substrate S and a mask alignment mark provided at a corner of the mask M.

[0031] During alignment, the camera 261 captures images of the substrate S and mask M and outputs image data to the control unit 270. The control unit 270 analyzes the captured image data and acquires position information of the substrate alignment mark and the mask alignment mark by a method such as pattern matching processing. Then, based on the positional deviation amount between the substrate alignment mark and the mask alignment mark, it calculates the XY direction, movement distance, and rotation angle θ for moving the substrate S. Then, it converts the calculated movement amount into the drive amount of the stepping motor, servo motor, etc. equipped in each actuator of the alignment stage 280, and generates a control signal. Note that two-stage alignment may be performed using a camera for rough alignment with a low resolution but a wide field of view and a camera for fine alignment with a narrow field of view but a high resolution.

[0032] The control unit 270 is an information processing device that communicates with each component of the film forming apparatus 1 via a control line or wireless communication (not shown), receives data from each component, and sends a signal to each component to control the operation. The control unit 270 can be configured by, for example, a computer having a processor, a memory, a storage, an I / O, and the like. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or an FPGA. Note that a control unit 270 may be provided for each film forming chamber, or one control unit 270 may control multiple film forming chambers.

[0033] The power supply 290 is a high-voltage power supply device capable of supplying voltage to each component of the film forming apparatus 1 via conductive wires (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage in accordance with instructions from the control unit 270. The power supply 290 can be considered as a voltage supplying means. By controlling the polarity and magnitude of the voltage (adsorption voltage) applied to the electrode of the electrostatic chuck C, the adsorption force to the substrate S can be controlled. Note that the power supply 290 and the control unit 270 may be considered to collectively constitute the power supply of the film forming apparatus.

[0034] The application of the present invention is not limited to the cluster-type deposition apparatus described above, but can also be applied to an in-line deposition apparatus in which a plurality of chambers are connected in a vacuum and a substrate held by a substrate carrier is moved between the chambers to deposit a film.

[0035] (Electrostatic Chuck) Electrostatic chuck C has a structure in which an electric circuit such as a metal electrode is embedded in a plate-shaped base material made of ceramics, etc. Generally, electrostatic chucks are classified into types such as gradient force type, Coulomb force type, and Johnsen-Rahbek force type according to the principle of adhering to the substrate, and in any case, the adhering force can be increased by increasing the applied adhering voltage.

[0036] A gradient force type electrostatic chuck attracts an object by utilizing an attractive force generated toward an area with a potential gradient (gradient) generated by a potential difference between electrodes. The gradient force is generated even if the object to be attracted is an insulator, so it can hold even bare glass or a glass substrate with no conductive film formed thereon. When generating the gradient force, an attraction voltage is applied so that the potential of the first electrode is higher than the reference potential of the object to be attracted and the potential of the second electrode is lower than the reference potential. In order to increase this gradient force, it is necessary to reduce the space between the electrodes and to arrange the electrodes closely together in order to make the potential gradient as steep as possible. Therefore, two comb-tooth electrodes with a structure in which the protruding comb teeth interdigitate with each other are suitable as electrodes for use in a gradient force type electrostatic chuck.

[0037] The Coulomb force type electrostatic chuck attracts an object to be attracted by electrostatic attraction generated by applying a positive potential voltage and a negative potential voltage to two electrodes, respectively, and is effective when the object to be attracted is a conductor. Therefore, it can be effectively attracted to a substrate on which an electrode layer of a metal material has already been formed. When the object to be attracted is in a floating state not connected to ground, it is possible to attract the object by generating polarization in the object to be attracted by facing both the positive and negative electrodes. When the object to be attracted is grounded, it can be attracted by at least one of the positive and negative electrodes. The Coulomb force is generally stronger than the gradient force. Also, the larger the area of ​​the electrode facing the object to be attracted, the stronger the attraction force. Therefore, in order to increase the attraction force, it is necessary to increase the ratio of the electrode area to the area of ​​the electrostatic chuck as much as possible.

[0038] The Johnson-Rahbek force type electrostatic chuck attracts a conductive object by passing a leakage current through the positive electrode, the object, and the negative electrode in that order, and requires a dielectric with a volume resistance value in a specified range to be placed between the electrode and the object. The Johnson-Rahbek force is generally stronger than the Coulomb force. Also, in the Johnson-Rahbek force type electrostatic chuck, the larger the contact area with the object, the stronger the chucking force can be.

[0039] (Detection of adhesions to electrostatic chucks) With reference to Fig. 3, a change in the clamping force when foreign matter is attached to the surface of the electrostatic chuck C will be described. Figs. 3(a) to 3(d) are schematic cross-sectional views of the electrostatic chuck C, showing a positive electrode 250 and a negative electrode 260 embedded in a base material. The positive electrode 250 and the negative electrode 260 are connected to a power source 290, and a voltage of a desired magnitude is applied to them under the control of a control unit 270, generating a clamping force corresponding to the magnitude of the voltage, thereby clamping the substrate S. In Fig. 3, the magnitude of the clamping force is represented by the number of arrows pointing from the substrate S to the electrostatic chuck C.

[0040] 3(a) shows a state where there is no adhesion to the electrostatic chuck C, and when a voltage is applied to the electrodes in this state, an adhesion force of a designed magnitude is generated over the entire surface of the electrostatic chuck C. FIG. 3(b) shows a state where a small amount of conductive adhesion 220 is attached to the surface of the electrostatic chuck C as a result of film formation material flying inside the chamber 200 during the film formation process. In this case, even if a voltage is applied to the electrodes, an adhesion force cannot be generated in the area where the adhesion 220 is attached, so The adsorption force to the substrate S decreases.

[0041] FIG. 3(c) shows a state where even more deposits 220 are attached to the surface of the electrostatic chuck C. In this case, the adsorptive force for the substrate S is further reduced. In the state shown in FIG. 3(b) or FIG. 3(c), there is a possibility that the adsorptive force sufficient to support the weight of the substrate S cannot be obtained and the substrate S cannot be held. Even if the substrate S can be held, there is a possibility that bending occurs in an area where the adsorptive force cannot be exerted, resulting in a decrease in the accuracy of film formation. FIG. 3(d) shows a state where the deposition of the conductor has progressed further and a conductive film has been formed on the entire surface of the electrostatic chuck C. In this state, the adsorptive force cannot be exerted over the entire surface, and the substrate S cannot be held.

[0042] Therefore, in a film formation process using the film formation apparatus 1, it is necessary to inspect the state of foreign matter adhering to the surface of the electrostatic chuck C periodically or at a desired timing, and if any foreign matter is found, it is necessary to remove the foreign matter or replace the electrostatic chuck C.

[0043] FIG. 4 shows a configuration for detecting conductive deposits on the surface of the electrostatic chuck C in this embodiment. A first switch 320 capable of switching between a connected state and a disconnected state is provided on a conductor that supplies power from a power source 290 to the electrodes of the electrostatic chuck C. The film forming apparatus 1 also includes a capacitance detector 310 connected to both electrodes of the electrostatic chuck C. The capacitance detector 310 may be a capacitance sensor that measures a capacitance value between the two electrodes and outputs the capacitance value to the control unit 270 as an analog signal. In such a capacitance sensor, the higher the amount of conductor that is attached between the electrodes, the higher the capacitance value that is detected. A second switch 325 capable of switching between a connected state and a disconnected state is also provided on the conductor that connects the capacitance detector 310 and the electrostatic chuck C. Each switch can be considered as a switching means.

[0044] The control unit 270 converts the detection signal from the capacitance sensor into a digital signal, and compares it with a capacitance value previously measured and stored in a memory to determine the presence or absence and the degree of adhesion of foreign matter. In this embodiment, the capacitance detection unit 310 corresponds to a detection means for detecting the state of the attracting surface when the electrostatic chuck C is not attracting a substrate. The capacitance detection unit 310 and the control unit 270 may be considered as a combination of the detection means. The detection means is typically connected to an electric path between a power source and an electrode.

[0045] Further, the film forming apparatus 1 may be provided with a notification unit 275 that receives an instruction from the control unit 270 and notifies a user of an adhesion state of a foreign substance on the electrostatic chuck C. The notification unit 275 may have any configuration as long as it can notify the user of information. For example, when the control unit 270 is a computer, a monitor or a speaker of the computer may be used, or a dedicated lamp or speaker for notifying the user of adhesion of foreign substances may be provided. When the control unit 270 detects an abnormal state of the electrostatic chuck C that should be notified, the control unit 270 notifies the user of the information via the notification unit 275.

[0046] Furthermore, when an abnormal state is detected, the control unit 270 may increase the set value of the adsorption voltage to be applied during the next film formation so as to reliably adsorb the substrate S, instead of or in addition to the notification by the notification unit 275. Specifically, when the capacitance detection value is higher than a predetermined value or when the amount of attached matter calculated from the detection value is greater than a predetermined amount, the set value of the adsorption voltage is increased.

[0047] The capacitance detection unit 310 of this embodiment detects capacitance when no voltage is applied from the power supply 290 and therefore no substrate S is being attracted. Furthermore, by providing a first switch 320 and a second switch 325 as shown in the figure, it is possible to reliably switch paths when voltage is applied and when capacitance is detected. In other words, when capacitance is detected, the first switch When a voltage is applied, the first switch 320 is in a connected state and the second switch 325 is in a connected state (first state), and when a voltage is applied, the first switch 320 is in a connected state and the second switch 325 is in a disconnected state (second state). This eliminates the need to use a device capable of handling high voltage as the capacitance detection unit 310, and the configuration can be simplified. In this embodiment, the state of the electrostatic chuck C is detected when the substrate S is not attracted to the electrostatic chuck C, for example, when the film formation apparatus is installed, after a predetermined number of substrates have been formed, after the apparatus has been operated for a predetermined time, during regular or special maintenance, etc.

[0048] Table 1 shows an example of the relationship between the state of the electrostatic chuck C and the detection value in this embodiment. As described above, the greater the amount of adhesion, the greater the detection value. Note that the numerical values ​​and adhesion amounts shown in Table 1 are merely examples, and are set appropriately depending on the configuration of the electrostatic chuck C, the type of film-forming material, the required suction force, and the like. The control unit 270 may notify the user of the detection value itself, or may notify the user of the adhesion state determined from the detection value. Also, the stage at which the notification is to be made may be set arbitrarily. [Table 1]

[0049] As described above, according to this embodiment, the state of the attracting surface of the electrostatic chuck C can be detected based on the detected capacitance value, and therefore, if there is an abnormality in the electrostatic chuck C, appropriate measures such as replacement or removal of deposits can be taken. As a result, film formation is not performed in a state where the attracting force of the electrostatic chuck C is reduced, and film formation with high accuracy becomes possible.

[0050] <Example 2> Next, a description will be given of a second embodiment of the present invention. The same components as those in the first embodiment are given the same reference numerals, and the description will be omitted.

[0051] 5 shows a configuration for detecting conductive attachment on the surface of the electrostatic chuck C in this embodiment. The capacitance detection unit 310 in this embodiment is provided between the power source 290 and the electrostatic chuck C. The capacitance detection unit 310 in this embodiment has the same function as in the first embodiment of measuring the capacitance value between both electrodes and outputting the value to the control unit 270, but also performs capacitance measurement while the chucking voltage is being applied from the power source 290. Therefore, the capacitance detection unit 310 in this embodiment is required to have the performance to withstand the passage of a high voltage.

[0052] In the present embodiment, similarly to the first embodiment, the greater the amount of conductor adhering between the two electrodes, the higher the capacitance value detected. Therefore, it is possible to notify the user of the state of the adhesions on the electrostatic chuck C.

[0053] Furthermore, in the configuration of this embodiment, the capacitance can be continuously detected even while a high voltage for adsorbing the substrate S is being applied. Here, the electrostatic chuck C can effectively adsorb the substrate S on which a conductive film (e.g., an electrode layer made of a metal material) has already been formed, but it is known that even when the electrostatic chuck C adsorbs the substrate S with such a conductive film, the detected value of the capacitance becomes high, as in the case where a conductor adheres to the electrostatic chuck C. Therefore, the control unit 270 can compare the detected value of the capacitance with a preset threshold value to determine whether the substrate S is adsorbed to the electrostatic chuck C or whether the substrate S is peeled off from the electrostatic chuck C. In addition, the control unit When the detector 270 detects a sudden change in the detection value, it can be determined that a change has occurred in the adsorption state or the peeling state of the substrate S.

[0054] In addition, the higher the detected value of the electrostatic capacitance, the lower the adsorption force, and therefore the degree of contact between the substrate S and the electrostatic chuck C decreases. Therefore, the control unit 270 of this embodiment determines the following based on the detected value of the electrostatic capacitance: It is also possible to detect the degree of contact. If the control unit 270 determines that the degree of contact is lower than a predetermined value, the control unit 270 may increase the adhesion voltage to increase the degree of contact.

[0055] <Example 3> Next, a third embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted.

[0056] FIG. 6(a) is a schematic plan view showing the configuration of an electrostatic chuck C in this embodiment. FIG. 6(b) is a schematic cross-sectional view taken along line A-A' in FIG. 6(a). The electrostatic chuck C in this embodiment has a total of 12 regions (C 11 ~C 43 The control unit 270 and the power source 290 can individually control the application of the attraction voltage to each of the regions.

[0057] The capacitance detection unit 310 of this embodiment includes a plurality of capacitance detection sensors corresponding to each region. This enables parallel measurement of capacitance, thereby shortening the measurement time. A single capacitance detection unit 310 may be configured to be connected or disconnected from each region individually using a switch. Then, the capacitance is measured sequentially while switching the regions to be connected. In this case, the measurement time is longer, but the device configuration can be simplified.

[0058] According to this configuration, it is possible to determine in which region of the electrostatic chuck C the capacitance value exceeds the threshold value. Therefore, when a large electrostatic chuck C corresponding to a large substrate is used, the location where the foreign matter is attached can be easily identified. Furthermore, when the foreign matter is not attached to the entire attracting surface of the electrostatic chuck C but is concentrated in a specific region, the attracting force can be increased by increasing the voltage applied to the electrode in the adhesion region, thereby compensating for the decrease in the attracting force in the adhesion region.

[0059] When a detection unit capable of detecting the electrostatic capacitance even while the attracting voltage is being applied is connected to each divided region of the electrostatic chuck C as in the second embodiment, it is possible to detect the attracting state of the substrate S for each divided region of the electrostatic chuck C. In this case, the degree of contact between the electrostatic chuck C and the substrate S can be measured for each position.

[0060] (Modification) FIG. 7(a) is a schematic plan view showing the configuration of an electrostatic chuck C in a modified example of this embodiment. FIG. 7(b) is a schematic cross-sectional view taken along line B-B' in FIG. 7(a). The electrostatic chuck C in this modified example is divided into a total of four areas, from area C1 in the center to area C2, area C3, and area C4, in that order from area C1 toward the outside. The control unit 270 and the power source 290 can individually control the applied voltage for each area. In this modified example, instead of disposing a capacitance detection unit for each area, a configuration in which a single capacitance detection unit is connected to a different area by a switch may also be used.

[0061] In this modified example as well, it becomes possible to identify which region of the electrostatic chuck C the foreign matter has adhered to. The configuration of this modified example is effective, for example, in a case where the adhesion of the foreign matter progresses from the outer periphery side to the inner periphery side of the electrostatic chuck C, or conversely, in a case where the adhesion of the foreign matter progresses from the inner periphery side to the outer periphery side.

[0062] The electrostatic chuck C can be divided into rectangular pieces as shown in Figure 6 or into concentric pieces as shown in Figure 7. The division method and the division number may be appropriately determined depending on the size of the electrostatic chuck C, the configuration of the entire device, the manufacturing cost, the required detection accuracy, and the like.

[0063] <Example 4> Next, a fourth embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted.

[0064] FIG. 8 shows a detection means for detecting the state of adhesion of foreign matter on the surface of the electrostatic chuck C in this embodiment. The detection means in this figure is a camera 370 as an imaging means capable of imaging the attraction surface of the electrostatic chuck C. The camera 370 and the control unit 270 may be considered as a combination of the detection means. The camera 370 transmits the image acquired by imaging to the control unit 270. The control unit 270 analyzes the captured image to identify the presence or absence of adhesion, the amount of adhesion, and the position of adhesion on the electrostatic chuck C. Existing image processing technology can be used to detect adhesion based on the image. For example, the captured image may be compared with an image in a state without adhesion that was captured in advance and stored in a memory, and analysis may be performed based on the difference. In addition, a foreign matter detection process using edge detection processing of the captured image and a foreign matter detection using machine learning can be used. The control unit 270 notifies the user of information regarding the position and amount of adhesion detected by image analysis via the notification unit 275.

[0065] In the illustrated example, the camera 370 is mounted on a moving mechanism 375. The moving mechanism 375 is a means for moving the camera 370 in a plane parallel to the adsorption surface of the electrostatic chuck C. The moving mechanism 375 moves the camera 370 on the guide rail at a predetermined scanning speed under the control of the control unit 270, thereby enabling the entire electrostatic chuck C to be imaged. In addition, in the case of a configuration in which film formation is performed while scanning the evaporation source 240, the moving mechanism 375 may move both the evaporation source 240 and the camera 370.

[0066] Next, an example of the moving mechanism 375 is shown. FIG. 9(a) shows an example using a one-axis moving mechanism, and the moving mechanism 375 includes a guide rail 377 and a driving means such as a motor. In this example, a plurality of cameras 370 are arranged in a direction perpendicular to the scanning direction, and the width of the electrostatic chuck C in the perpendicular direction can be imaged at once. FIG. 9(b) shows an example using a two-axis moving mechanism, and includes a first guide rail 377 and a second guide rail 379. In this example, one camera 370 images the entire electrostatic chuck C while moving in the scanning direction and the perpendicular direction.

[0067] FIG. 9(c) shows another example of the moving mechanism 375. The moving mechanism 375 is a robot arm including links 385a to 385c and joints 387a to 387c, and is disposed at the bottom of the chamber 200. The camera 370 is attached to the link 385c, and captures an image while moving in a plane parallel to the adsorption surface of the electrostatic chuck C in accordance with the movement of the robot arm. With this configuration, an image can be quickly captured at a desired position according to an instruction from a user or under the control of the control unit 270. Note that, even in the case of FIG. 9(c), the moving mechanism 375 may function as both a moving mechanism for the evaporation source 240 and a moving mechanism for the camera 370.

[0068] Note that the moving mechanism 375 is not limited to the illustrated example as long as the camera 370 can capture an image of the entire attracting surface of the electrostatic chuck. In addition, instead of moving the camera 370, a wide-angle camera capable of capturing an image of the entire electrostatic chuck C at the same time may be used as the camera 370.

[0069] <Example 5> Next, a fifth embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted.

[0070] FIG. 10 shows a detection means for detecting the state of adhesion of foreign matter on the surface of the electrostatic chuck C in this embodiment. The detection means in this figure is a laser distance meter 390 as a distance measurement means for measuring the distance to the adsorption surface of the electrostatic chuck C. The laser distance meter 390 irradiates a laser beam in the direction of the electrostatic chuck C and receives the reflected light from the electrostatic chuck C. The control unit 270 calculates the distance to the electrostatic chuck C based on the time from irradiation to reception of the light. The control unit 270 also stores information on the distance to the electrostatic chuck C at each position that the laser distance meter 390 can take, based on information at the time of designing the film forming apparatus, in a memory. The control unit 270 then compares the actually measured distance with the distance stored in the memory to determine whether or not foreign matter is attached.

[0071] In addition, the distance measuring means is not limited to a type that uses laser light, so long as it can measure the distance to the electrostatic chuck C. A distance measuring device that uses light or radio waves other than laser light, such as a radar that uses millimeter waves or microwaves, or a distance sensor that uses ultrasonic waves, may also be used. In addition, in FIG. 10, an example is shown in which the laser distance measuring device 390 is moved using a two-axis moving mechanism 375. However, as long as the laser distance measuring device 390 can be moved in a plane parallel to the electrostatic chuck C, a one-axis moving mechanism, a robot arm, or other moving mechanisms may also be used.

[0072] <Example 6> Next, a sixth embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted.

[0073] 11 shows a means for detecting the state of adhesion of foreign matter on the surface of the electrostatic chuck C in this embodiment. The detection means in this figure is an ammeter 395 as a current measuring means that measures a current by bringing a detection probe 397 close to the electrostatic chuck C. Here, the current strength of the leakage current in the electrostatic chuck C changes depending on the amount of conductor adhesion to the electrostatic chuck C. Therefore, the control unit 270 can determine the amount of conductor adhesion by measuring the leakage current using the ammeter 395.

[0074] 11 shows an example in which the detection probe 397 is moved using a robot arm type moving mechanism 375. However, a one-axis or two-axis moving mechanism or other moving mechanisms may be used.

[0075] <Example 7> Next, a seventh embodiment of the present invention will be described. The same components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be omitted. This embodiment can be implemented by a configuration including a capacitance sensor, for example, as shown in Figs. 4 to 7. In the configuration of Fig. 4, as exemplified in Table 1, the adhesion state and amount of foreign matter, such as a film forming material, attached to the electrostatic chuck C is detected by referring to the detected capacitance value.

[0076] As described above, when the electrostatic chuck C attracts the substrate S with a conductive film, the detected capacitance value becomes high in the same manner as when foreign matter adheres to the electrostatic chuck C. It is known that the more foreign matter adheres, the smaller the amount of change in capacitance when the substrate S is attracted.

[0077] Therefore, the control unit 270 of this embodiment detects the presence or absence of foreign matter and the state of adhesion (amount of adhesion) based on the amount of change in capacitance when the substrate S is attracted. That is, the control unit 270 detects the state of adhesion of foreign matter based on a table or formula that is stored in advance in memory and indicates the relationship between the state of adhesion of foreign matter and the amount of change in capacitance value when the substrate is attracted, and notifies the user.

[0078] According to the configuration of this embodiment, in addition to or different from the methods of Examples 1 to 3, In addition, the presence or absence of adhesion of foreign matter and the adhesion state can be detected based on the change in electrostatic capacitance when the substrate is attracted, thereby further improving the detection accuracy.

[0079] <Example 8> Next, an eighth embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted. This embodiment can also be implemented by a configuration including a capacitance sensor as shown in Figs. 4 to 7.

[0080] Here, the wear of the electrostatic chuck C will be considered. The electrostatic chuck C has a structure in which an electric circuit is embedded in a base material such as ceramic, and the base material gradually wears over time of use. According to the inventor's knowledge, if no foreign matter is attached to the electrostatic chuck C, there is almost no change in the capacitance value between before and after wear. However, the amount of change (increase) in the capacitance value when the electrostatic chuck C adsorbs the substrate S is greater after wear than before wear.

[0081] Therefore, the control unit 270 of this embodiment detects the presence or absence of wear in the electrostatic chuck C and the degree of wear based on the amount of change in the capacitance when the electrostatic chuck attracts the substrate S. That is, the control unit 270 detects the wear state of the electrostatic chuck based on a table or a formula that is stored in advance in a memory and that indicates the relationship between the presence or absence and the degree of wear in the electrostatic chuck C and the amount of change in the capacitance value when the electrostatic chuck attracts the substrate, and notifies the user of the detection.

[0082] According to the configuration of this embodiment, it is possible to detect the wear state of the electrostatic chuck C based on the change in electrostatic capacitance when attracting a substrate. Therefore, for example, it is possible to calculate the life and replacement time of the electrostatic chuck C and notify the user of the results.

[0083] <Example 9> Next, a ninth embodiment of the present invention will be described. The same components as those in the above-mentioned embodiments are given the same reference numerals, and the description thereof will be omitted. This embodiment can be implemented by a configuration including a means for measuring distance, as shown in FIG.

[0084] In the example of Fig. 10, the control unit 270 detects the adhesion state of foreign matter to the electrostatic chuck C by comparing the distance to the electrostatic chuck C measured using a distance meter or the like with the distance stored in the memory. In this embodiment, the control unit 270 detects the wear state of the electrostatic chuck C in addition to or together with the adhesion state of foreign matter. That is, when the distance to the electrostatic chuck C is shorter than the value stored in the memory, the control unit 270 determines that foreign matter is attached to the electrostatic chuck C. On the other hand, when the distance to the electrostatic chuck C is longer than the value stored in the memory, the control unit 270 determines that the electrostatic chuck C is worn.

[0085] As described above, the state of foreign matter adhesion may differ for each region of the electrostatic chuck C. According to this embodiment, it is also possible to detect the state of foreign matter adhesion for each region by measuring the distance to the electrostatic chuck C for each part by a method such as scanning with a distance meter. For example, when measuring the distance while scanning the electrostatic chuck C, it is assumed that there are "(a) a position where the distance is longer than when it is new" and "(b) a position where the distance is the same (or shorter) than when it is new." In this case, since the electrostatic chuck C is worn all over, it is considered that the amount of adhesion is large at position (a), and therefore the decrease in distance due to the adhesion of foreign matter is larger than the increase in distance due to wear. On the other hand, it is considered that at position (b), the increase in distance due to wear and the decrease in distance due to the adhesion of foreign matter are balanced (or the latter is greater).

[0086] According to the configuration of this embodiment, in addition to or separately from the state of foreign matter adhering to the electrostatic chuck C, the wear state of the electrostatic chuck C can be detected. It becomes possible to calculate the service life and replacement time of the electric chuck C and notify the user.

[0087] <Electronic device manufacturing method> Next, an example of a method for manufacturing an electronic device using the film forming apparatus according to this embodiment will be described. Below, the configuration of an organic EL display device will be shown as an example of the electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0088] First, the organic EL display device to be manufactured will be described. Fig. 12(a) is an overall view of an organic EL display device 700, and Fig. 12(b) shows the cross-sectional structure of one pixel.

[0089] As shown in FIG. 12(a), a plurality of pixels 702 each including a plurality of light-emitting elements are arranged in a matrix in a display region 701 of an organic EL display device 700. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 701. In the case of the organic EL display device according to this embodiment, the pixel 702 is configured by a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that emit light different from each other. The pixel 702 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0090] Fig. 12(b) is a schematic partial cross-sectional view taken along the line BB in Fig. 12(a). The pixel 702 is made up of a plurality of light-emitting elements, and each light-emitting element has a first electrode (anode) 704, a hole transport layer 705, one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among these, the hole transport layer 705, the light-emitting layers 706R, 706G, and 706B, and the electron transport layer 707 correspond to organic layers. In this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed in patterns corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue light, respectively.

[0091] The first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 may be formed in common for the plurality of light-emitting elements 702R, 702G, and 702B, or may be formed for each light-emitting element. In order to prevent the first electrode 704 and the second electrode 708 from being shorted by foreign matter, an insulating layer 709 is provided between the first electrodes 704. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 710 is provided to protect the organic EL element from moisture and oxygen.

[0092] 12(b), the hole transport layer 705 and the electron transport layer 707 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can be formed between the second electrode 708 and the electron transport layer 707.

[0093] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0094] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

[0095] An acrylic resin is formed by spin coating on the substrate 703 on which the first electrode 704 is formed. The acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 704 is formed, thereby forming the insulating layer 709. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0096] The substrate 703 with the patterned insulating layer 709 is placed on a substrate carrier on which an adhesive member is arranged. The substrate 703 is held by the adhesive member. The substrate is then carried into a first organic material deposition apparatus, and after inversion, a hole transport layer 705 is deposited as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is deposited by vacuum deposition. In practice, the hole transport layer 705 is formed to be larger than the display area 701, so no high-resolution mask is required.

[0097] Next, the substrate 703 on which the hole transport layer 705 has been formed is carried into a second organic material film forming apparatus. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light emitting layer 706R is formed on the portion of the substrate 703 where the red light emitting element is to be disposed.

[0098] Similar to the formation of the light-emitting layer 706R, a light-emitting layer 706G that emits green light is formed by a third organic material film formation apparatus, and further a light-emitting layer 706B that emits blue light is formed by a fourth organic material film formation apparatus. After the formation of the light-emitting layers 706R, 706G, and 706B is completed, an electron transport layer 707 is formed over the entire display area 701 by a fifth film formation apparatus. The electron transport layer 707 is formed as a layer common to the three light-emitting layers 706R, 706G, and 706B.

[0099] The substrate on which the electron transport layer 707 has been formed is moved in a metallic evaporation material deposition device, and a second electrode 708 is deposited.

[0100] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 710 is formed, completing the film formation process on the substrate 703. After inversion, the adhesive member is peeled off from the substrate 703, thereby separating the substrate 703 from the substrate carrier. Then, the organic EL display device 700 is completed through cutting.

[0101] If the substrate 703 on which the insulating layer 709 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 710 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0102] 1: film forming device, 310: capacitance detection unit, C: electrostatic chuck, S: substrate

Claims

1. A film deposition apparatus for depositing films on a substrate, An electrostatic chuck having an adsorption surface for adsorbing the substrate, A detection means for detecting the state of the adsorption surface where the substrate is not adsorbed, A film deposition apparatus characterized by comprising the following features.

2. The electrostatic chuck has electrodes to which a voltage is applied for adsorbing the substrate, The detection means detects the capacitance of the electrode. The film deposition apparatus according to feature 1.

3. The detection means detects the state or presence of deposits on the adsorption surface based on the detected capacitance value. The film deposition apparatus according to feature 2.

4. The film-forming apparatus according to claim 3, characterized in that the detection means determines that the amount of deposit is greater the higher the detected capacitance value.

5. The detection means detects the state or presence of substances attached to the adsorption surface. The film deposition apparatus according to feature 1.

6. The electrostatic chuck has electrodes to which a voltage is applied for adsorbing the substrate, The system includes a voltage supply means that controls the voltage applied to the electrode based on the detection result of the detection means. The film deposition apparatus according to feature 1.

7. The detection means detects the state or presence of substances attached to the adsorption surface, The voltage supply means increases the voltage when the amount of deposits exceeds a predetermined amount. The film deposition apparatus according to feature 6.

8. The electrode is connected to the detection means and not connected to the voltage supply means. The system includes a switching mechanism for switching between a first state and a second state in which the connection between the detection means and the electrode is disconnected. The film deposition apparatus according to feature 6.

9. The detection means is connected to the electrical path between the electrode and the voltage supply means. The film deposition apparatus according to feature 6.

10. The detection means further detects the degree of contact between the substrate and the electrostatic chuck. The film deposition apparatus according to feature 1.

11. The system includes a voltage supply means that controls the voltage supplied to the electrostatic chuck based on the detection result of the detection means, The voltage supply means increases the voltage when the degree of contact between the substrate and the electrostatic chuck is lower than a predetermined value. The film deposition apparatus according to claim 10.

12. The electrostatic chuck is divided into a plurality of regions, each having an electrode to which a voltage is applied for adsorbing the substrate. The detection means detects the capacitance of the electrode for each of the plurality of regions. The film deposition apparatus according to feature 1.

13. The set value of the adsorption voltage applied to the electrode in the region where the detection means determines that there is an abnormality among the multiple regions is increased. The film deposition apparatus according to claim 12.

14. The detection means is an imaging means for imaging the electrostatic chuck, and detects the state of the adsorption surface based on the captured image. The film deposition apparatus according to feature 1.

15. The detection means is a distance measuring means for measuring the distance to the electrostatic chuck, and detects the state of the adsorption surface based on the distance from the detection means to the electrostatic chuck. The film deposition apparatus according to feature 1.

16. The detection means is a current measuring means for measuring the leakage current of the electrostatic chuck, and detects the state of the adsorption surface based on the measured current intensity. The film deposition apparatus according to feature 1.

17. The detection means is further provided with a moving mechanism that moves it in a plane parallel to the suction surface of the electrostatic chuck. The film deposition apparatus according to any one of claims 14 to 16.

18. The detection means further includes a notification unit that notifies the user when it detects an abnormality in the state of the adsorption surface. The film deposition apparatus according to feature 1.

19. The detection means detects the change in capacitance when the electrostatic chuck attracts the substrate. The film deposition apparatus according to feature 2.

20. The detection means further detects the wear status of the electrostatic chuck. The film deposition apparatus according to feature 1.

21. A detection device placed in a film deposition apparatus that deposits a film on a substrate adsorbed by the adsorption surface of an electrostatic chuck, The system includes a detection means for detecting the state of the adsorption surface where the substrate is not adsorbed. A detection device characterized by the following features.

22. A method for controlling a film deposition apparatus that deposits a film on a substrate adsorbed by the adsorption surface of an electrostatic chuck, The detection means includes a step of detecting the state of the adsorption surface in which the substrate is not adsorbed. A method for controlling a film deposition apparatus, characterized by the features described above.

23. To manufacture an electronic device using the film deposition apparatus described in Claim 1. A method for manufacturing an electronic device characterized by the following:

Images