Substrate chuck, lithography device, and article manufacturing method

Abstract

To provide a technique advantageous for further improving the accuracy of correcting the shape of a substrate.SOLUTION: A substrate chuck has: a plurality of adsorption areas including a first adsorption area and a second adsorption area formed on an inner peripheral side of the first adsorption area, which are partitioned from each other by a partition wall in a concentric circular manner on a substrate holding surface; and a pressure space formed inside the substrate chuck below the first adsorption area and the second adsorption area, and configured to displace the substrate holding surface by being applied with negative pressure or positive pressure. The height of an outer peripheral side partition wall of the first adsorption area is lower than that of an inner peripheral side partition wall partitioning the first adsorption area and the second adsorption area from each other, and the radius of an outer peripheral side end of the pressure space is equal to or less than the neutral radius of the outer peripheral side partition wall.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a substrate chuck, a lithographic apparatus, and a method for manufacturing an article. [Background technology]

[0002] Photolithography is known as a method for manufacturing articles such as semiconductor devices and MEMS. In photolithography, a pattern formed on a mold is transferred to a region (shot region) on a substrate. In this transfer, it is important to match the position and shape of the pattern and the shot region. Cited Document 1 discloses that a partition wall is formed on the substrate holding surface of a substrate chuck near the outer periphery of the substrate, which tends to be particularly distorted, and the pressure in the space partitioned by the partition wall is individually controlled to correct the distorted shape of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-92178 A Summary of the Invention [Problem to be solved by the invention]

[0004] As semiconductor devices become more highly integrated, circuit patterns are becoming more multi-layered. In multi-layered substrates, accumulation of film distortions and the like that occur during film formation can cause warping of various shapes. According to the technology disclosed in Patent Document 1, it is possible to correct steeply distorted shapes near the outer periphery of the substrate. However, the technology disclosed in Patent Document 1 is not suitable for correcting gradual distorted shapes.

[0005] The present invention provides a technique that is advantageous for achieving even higher accuracy in correcting the shape of a substrate. [Means for solving the problem]

[0006] According to one aspect of the present invention, there is provided a substrate chuck that adsorbs and holds a substrate on a substrate holding surface, the substrate chuck having a plurality of suction regions on the substrate holding surface, the suction regions including a first suction region and a second suction region formed on the inner side of the first suction region, which are concentrically divided by a partition, and a pressure space formed inside the substrate chuck below the first suction region and the second suction region and configured to displace the substrate holding surface by application of negative pressure or positive pressure, wherein the height of the outer peripheral partition of the first suction region is lower than that of an inner peripheral partition separating the first suction region and the second suction region, and the radius of the outer peripheral end of the pressure space is equal to or less than the neutral radius of the outer peripheral partition. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous for achieving even higher accuracy in correcting the shape of a substrate. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing the configuration of an imprint apparatus. [Diagram 2] FIG. 4 is a plan view of the substrate chuck with a substrate placed thereon; [Diagram 3] FIG. 4 is a plan view of the substrate chuck with the substrate removed. [Figure 4] FIG. [Diagram 5] 4A to 4C are diagrams for explaining a method of adsorbing a substrate. [Figure 6] 4A to 4C are diagrams for explaining a method of adsorbing a substrate. [Figure 7] 5A to 5C are diagrams for explaining a method of deforming a substrate by using a hollow portion. [Figure 8] 5A to 5C are diagrams for explaining a method of deforming a substrate by using a hollow portion. [Figure 9] 5A to 5C are diagrams for explaining a method of deforming a substrate by using a hollow portion. [Figure 10] FIG. 2 is a diagram showing a plurality of shot areas on a substrate.

[0009] It should be understood that the figures are schematic diagrams and are not necessarily drawn to scale, and the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help understand the embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] The present disclosure relates to a lithography apparatus for forming a pattern or a film on a substrate. Lithography apparatuses include imprint apparatuses, film forming apparatuses (flattening apparatuses), exposure apparatuses, and the like. The imprint apparatus is an apparatus for forming a pattern on a substrate by curing an imprint material supplied on the substrate while a mold (original) is in contact with the imprint material. The film forming apparatus is an apparatus for forming a flat film on a substrate by curing a curable composition supplied on the substrate while a flat template is in contact with the curable composition. The exposure apparatus is an apparatus for transferring a pattern of an original onto a substrate via a projection optical system. For example, the exposure apparatus exposes a photoresist applied on a substrate through an original (reticle) which is an exposure mask, thereby forming a latent image corresponding to the pattern of the original in the photoresist. In the following, in order to provide a concrete example, an example in which the lithography apparatus is configured as an imprint apparatus will be described.

[0012] FIG. 1 is a schematic diagram of an imprint apparatus 1 in an embodiment. In this specification and the drawings, directions are shown in an XYZ coordinate system with the horizontal plane as the XY plane. In general, a substrate 5, which is an exposed substrate, is placed on a substrate stage 6 so that its surface is parallel to the horizontal plane (XY plane). Therefore, in the following, directions perpendicular to each other in a plane along the surface of the substrate 5 are referred to as the X-axis and Y-axis, and a direction perpendicular to the X-axis and Y-axis is referred to as the Z-axis. In the following, directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are referred to as the X-direction, Y-direction, and Z-direction, respectively, and the rotation direction around the X-axis, the rotation direction around the Y-axis, and the rotation direction around the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

[0013] First, an overview of an imprinting apparatus according to an embodiment will be described. The imprinting apparatus is an apparatus that brings an imprinting material supplied onto a substrate into contact with a mold and applies energy for curing to the imprinting material, thereby forming a pattern of a cured material to which the concave-convex pattern of the mold has been transferred.

[0014] As the imprint material, a curable composition (sometimes called an uncured resin) that is cured by applying energy for curing is used. As the energy for curing, electromagnetic waves, heat, etc. can be used. The electromagnetic waves can be, for example, light having a wavelength selected from the range of 10 nm to 1 mm, such as infrared rays, visible light, and ultraviolet rays. The curable composition can be a composition that is cured by irradiation with light or by heating. Among these, a photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal mold release agent, a surfactant, an antioxidant, and a polymer component. The imprint material can be arranged on the substrate in the form of droplets, or in the form of islands or films formed by connecting a plurality of droplets, by an imprint material supply device (supply unit 8 in FIG. 1). The viscosity of the imprint material (at 25° C.) may be, for example, 1 mPa·s or more and 100 mPa·s or less. Examples of materials that may be used for the substrate include glass, ceramics, metals, semiconductors, and resins. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate may be, for example, a silicon wafer, a compound semiconductor wafer, or quartz glass.

[0015] The imprint apparatus 1 may include an irradiation unit 2 that irradiates light, a mold holding unit 4 that holds a mold 3, a substrate chuck 7 that holds a substrate 5, and a substrate stage 6 that moves while mounting the substrate chuck 7. The imprint apparatus 1 may further include a supply unit 8 that supplies an imprint material, an alignment optical system 9, and a control unit 14.

[0016] The light emitted from the irradiation unit 2 is reflected by the optical component 10, passes through the mold 3, and reaches the imprint material on the substrate 5. The optical component 10 may include an optical element for adjusting the light emitted from the irradiation unit 2 to light appropriate for the imprint process.

[0017] The outer periphery of the mold 3 can be rectangular. The mold 3 has a pattern portion 3a formed three-dimensionally on the surface facing the substrate 5. The material of the mold 3 is a material that can transmit ultraviolet light, such as quartz glass.

[0018] The mold holding unit 4 is fixed to a bridge base plate 13 supported by a base plate 11 via a support 12. The substrate stage 6 is fixed to the base plate 11. The mold holding unit 4 may include a mold holding mechanism 41 that holds the mold 3 by vacuum suction or electrostatic force, and a mold moving mechanism 42 that moves the mold holding mechanism 41 in the Z direction. The mold holding mechanism 41 and the mold moving mechanism 42 have an opening in the center (inside) so that the light from the irradiation unit 2 is irradiated onto the imprint material on the substrate 5. The mold moving mechanism 42 may include an actuator such as a voice coil motor or an air cylinder. The mold moving mechanism 42 moves the mold holding mechanism 41 (mold 3) in the Z direction to bring the mold 3 into contact with the imprint material on the substrate or to separate the mold 3 from the imprint material on the substrate. The mold moving mechanism 42 may be configured to have a function of adjusting the position of the mold holding mechanism 41 not only in the Z direction but also in the X direction or Y direction. Furthermore, the mold moving mechanism 42 may be configured to have a function for adjusting the position of the mold holding mechanism 41 in the θZ direction and a tilt function for adjusting the inclination of the mold holding mechanism 41 (i.e., the position in the θX and θY directions).

[0019] The mold holding unit 4 may further include a mold deformation mechanism 43. The mold deformation mechanism 43 corrects the shape of the mold 3 (pattern portion 3a) by applying an external force or displacement to the side surface of the mold 3. The mold deformation mechanism 43 includes, for example, a plurality of actuators, and is configured to apply pressure to a plurality of points on each side surface of the mold 3.

[0020] The substrate stage 6 may include a substrate chuck 7, a stage driver 61 for driving the substrate chuck 7, and a base plate 62 on which the substrate chuck 7 and the stage driver 61 are mounted. The substrate 5 and the mold 3 may be aligned in the X and Y directions by the substrate stage 6 when the mold 3 and the imprint material on the substrate 5 are brought into contact with each other. The substrate chuck 7 adsorbs and holds the substrate 5 on the substrate holding surface by, for example, vacuum adsorption or electrostatic action. The stage driver 61 mechanically holds the substrate chuck 7 and drives the substrate chuck 7 in the X and Y directions. For example, a linear motor may be used for the stage driver 61. The stage driver 61 may be composed of a plurality of drive systems including a coarse drive system and a fine drive system. The stage driver 61 may have a drive function for driving the substrate 5 in the Z direction, a position adjustment function for adjusting the position of the substrate 5 in the θZ direction, and a tilt function for adjusting the inclination of the substrate 5 (i.e., the position in the θX and θY directions).

[0021] For example, an encoder system including a scale provided on the substrate stage 6 and a head (optical device) provided on the stage driving unit 61 may be used to measure the position of the substrate stage 6, but is not limited to this. For example, for example, an interferometer system including a laser interferometer and a reflecting mirror provided on the stage driving unit 61 may be used to measure the position of the substrate stage 6.

[0022] The supply unit 8 supplies the imprint material onto the substrate 5. The imprint material supplied from the supply unit 8 onto the substrate 5 can be appropriately selected depending on various conditions in the manufacturing process of a semiconductor device. The position and amount of the imprint material discharged from the discharge port of the supply unit 8 can be appropriately determined in consideration of the thickness and density of the pattern formed in the imprint material on the substrate. In order to allow the imprint material supplied onto the substrate to sufficiently fill the pattern formed in the mold 3, a certain period of time may be allowed to pass while the mold 3 and the imprint material are in contact with each other.

[0023] The alignment optical system 9 measures the positional deviation in the X and Y directions between the alignment mark formed on the substrate 5 and the alignment mark formed on the mold 3. Based on the measured positional deviation, the position of the substrate stage 6 can be adjusted.

[0024] The imprint apparatus 1 may further include a height measuring device (not shown) that measures the distance to the upper surface of the substrate 5. The height measuring device may be an external device to the imprint apparatus 1. In that case, data measured by the height measuring device may be transmitted to the imprint apparatus 1 and stored in the memory of the control unit 14.

[0025] The control unit 14 is configured by, for example, a computer including a CPU, a memory, etc. The control unit 14 comprehensively controls the operation of the imprint apparatus 1 in accordance with a program stored in the memory.

[0026] The configuration of the substrate chuck 7 will be described with reference to Figures 2, 3, and 4. Figure 2 is a plan view of the substrate 5 and the substrate chuck 7 that holds it, as viewed from above along the Z axis. Figure 3 is a plan view of the substrate chuck 7 in which the substrate holding surface is exposed by removing the substrate 5 from Figure 2. Figure 4 is a cross-sectional view taken along the line A-A' shown in Figure 2.

[0027] As shown in Fig. 3, the substrate 5 placement surface (substrate holding surface) of the substrate chuck 7 is provided with an outer partition wall 7a and an inner partition wall 7b formed on the inner side of the outer partition wall 7a. A plurality of protrusions 7c for supporting the substrate 5 are formed in the inner region of the inner partition wall 7b of the substrate holding surface. The outer partition wall 7a and the inner partition wall 7b are concentrically arranged according to the shape of the substrate. Here, since it is assumed that the substrate 5 is circular, the outer partition wall 7a and the inner partition wall 7b are concentrically arranged.

[0028] (Cross-sectional configuration of substrate chuck 7) As shown in Fig. 4, on the substrate mounting surface (substrate holding surface) of the substrate chuck 7, the height (position in the Z direction) of the outer peripheral partition wall 7a is lower than the multiple protrusions 7c and the inner peripheral partition wall 7b. In one example, the difference in height between the outer peripheral partition wall 7a and the multiple protrusions 7c and the inner peripheral partition wall 7b may be 1 to 10 µm. Please note that in Fig. 4, the difference in height between the outer peripheral partition wall 7a and the multiple protrusions 7c and the inner peripheral partition wall 7b is depicted in a deformed manner.

[0029] The substrate chuck 7 may have a plurality of suction regions for suctioning (suctioning) the substrate 5 on the substrate holding surface. The plurality of suction regions may include an outer circumferential suction region 7d (first suction region) and an inner circumferential suction region 7e (second suction region) formed on the inner circumferential side of the outer circumferential suction region 7d, which are concentrically partitioned by a partition wall. The outer circumferential suction region 7d is formed in a space surrounded by the outer circumferential partition wall 7a and the inner circumferential partition wall 7b. The inner circumferential suction region 7e is formed in a space having a plurality of protrusions 7c on the inner circumferential side of the inner circumferential partition wall 7b.

[0030] In this embodiment, a hollow portion 7f, which is a disk-shaped space, is formed inside the substrate chuck 7. The hollow portion 7f is a pressure space formed inside the substrate chuck 7 below the outer circumferential suction region 7d and the inner circumferential suction region 7e, and configured to displace the substrate holding surface by applying negative or positive pressure. In one example, the hollow portion 7f is formed concentrically with the outer circumferential partition wall 7a and the inner circumferential partition wall 7b. The aim is to deform the substrate chuck 7 by applying pressure to the hollow portion 7f, and to transmit the deformation to the substrate 5, thereby deforming the substrate 5.

[0031] 4, in the outer periphery side suction region 7d, the substrate 5 is not supported by the substrate chuck 7, and therefore the deformation of the substrate chuck 7 due to the application of pressure to the hollow portion 7f cannot be transmitted to the substrate 5. In this embodiment, in order to efficiently transmit the deformation of the hollow portion 7f to the substrate 5, the radius of the outer periphery side end of the hollow portion 7f is set to be equal to or smaller than the neutral radius of the outer periphery side partition wall 7a. Specifically, the hollow portion 7f is disposed so that the hollow portion outer diameter 7fa, which is the radius of the outer periphery end of the hollow portion 7f, is equal to or smaller than the outer periphery side partition wall diameter 7aa, which is the neutral radius of the outer periphery side partition wall 7a.

[0032] (Method of Adsorbing Substrate 5) 5, the substrate 5 is vacuum-attached to the substrate chuck 7 by applying a vacuum to the inner suction region 7e. In FIG. 5, the inner suction region 7e indicated by thick hatching (cross hatching) may include an area in which a plurality of protrusions 7c are arranged on the inside of the inner partition wall 7b, and an exhaust path (flow path) penetrating the substrate chuck 7 to the lower side.

[0033] The height (position in the Z direction) of the outer peripheral side partition wall 7a is lower than the multiple protrusions 7c and the inner peripheral side partition wall 7b. In Fig. 6, the outer peripheral side suction region 7d, which is a space surrounded by the inner peripheral side partition wall 7b and the outer peripheral side partition wall 7a and is shown by oblique hatching, can also suction the substrate 5. The outer peripheral side suction region 7d also has an exhaust path (flow path) penetrating the substrate chuck 7.

[0034] The hollow portion 7f also has a flow path penetrating to the lower side of the substrate chuck 7. The outer circumferential suction region 7d, the inner circumferential suction region 7e, and the hollow portion 7f are each connected to a pressure control unit (vacuum device) (not shown) via a flow path, and the pressure in each space can be controlled individually. Note that these flow paths may be connected to the pressure control unit from the lower side of the substrate chuck 7, or may be connected to the pressure control unit by penetrating another surface of the substrate chuck 7.

[0035] A central partition wall (not shown) may be provided on the inner side of the inner partition wall 7b to further divide the inner suction region 7e into a plurality of concentric circles. The central partition wall further divides the inner suction region 7e into a plurality of regions. Each of the plurality of regions formed by the central partition wall is also connected to a pressure control unit, and the pressure of each space can be controlled individually. The central partition wall is preferably disposed on the inside of the inner end of the hollow portion 7f. In one example, the neutral radius of the central partition wall is equal to or smaller than the radius of the inner end of the hollow portion 7f.

[0036] Each of the multiple protrusions 7c arranged in the inner suction region 7e is a pin-shaped protrusion having a diameter of, for example, 5 mm or less, and does not have a shape that divides the region like a partition wall. The shape of the upper end surface of the protrusion may be circular or rectangular.

[0037] (Substrate deformation method using hollow space) The control unit 14 controls the shape of the substrate holding surface of the substrate chuck 7 to deform the substrate 5 held by the substrate chuck 7. A method of deforming the substrate 5 by the hollow portion 7f will be described below. As described above, the hollow portion 7f also has a flow path penetrating the substrate chuck 7, and this flow path is connected to a pressure control unit (not shown). The flow path of the hollow portion 7f may be connected to the pressure control unit by penetrating the lower surface of the substrate chuck 7 as shown in FIG. 6, or may be connected to the pressure control unit by penetrating another surface of the substrate chuck 7. The control unit 14 controls the pressure control unit to control the pressure inside the hollow portion 7f.

[0038] For example, as shown in Fig. 7, by evacuating the hollow portion 7f to reduce the pressure, the substrate chuck 7 can be deformed so that the substrate mounting surface is concave. Conversely, by applying pressure to the hollow portion 7f, the substrate chuck 7 can be deformed so that the substrate mounting surface has an upward convex shape. The substrate 5 can be bent in response to the deformation of the substrate chuck 7. In one example, the substrate 5 can be deformed starting from position 7g. In Fig. 7, for the sake of convenience, the substrate 5 is deformed so as to be folded at position 7g, but in reality it can be deformed in a curved shape.

[0039] When the substrate 5 is bent, the inclined upper and lower surfaces are displaced by tangent components with opposite positive and negative values ​​in the X direction, according to plate bending theory. In this way, the position of the upper surface of the substrate 5 is displaced, causing a difference in the overlay accuracy with the pattern portion 3a. By applying this difference in overlay so as to offset the known overlay error, the overlay accuracy can be improved.

[0040] Next, referring to Fig. 8, a case where the outer circumferential suction region 7d is used to deform the substrate 5 will be described. In Fig. 8, the outer circumferential suction region 7d is pressurized (positive pressure), causing the substrate 5 to deform and bounce upward. The substrate 5 is held by the inner circumferential suction region 7e up to the position of the inner circumferential partition wall 7b. Therefore, the substrate 5 is deformed starting from position 7h shown in Fig. 8 by pressurizing the outer circumferential suction region 7d. As in the example of Fig. 8, when the hollow portion 7f is depressurized (negative pressure) and the outer circumferential suction region 7d is pressurized (positive pressure), the substrate 5 can be deformed into a corrugated shape.

[0041] In correcting the overlay, it is desirable to separate position 7g, which is the starting point of substrate deformation caused by hollow portion 7f, from position 7h, which is the starting point of substrate deformation caused by outer periphery side suction region 7d. As an example, Fig. 9 shows a modified example of substrate 5 when hollow portion 7f is set to positive pressure and outer periphery side suction region 7d is set to negative pressure. It can be seen that the deformation of substrate 5 on the outer periphery side of position 7g is in the opposite phase to that shown in Fig. 8.

[0042] As described with reference to Fig. 4, in this embodiment, the hollow portion 7f is disposed so that the hollow portion outer diameter 7fa is equal to or smaller than the outer peripheral side partition diameter 7aa. Furthermore, it is desirable that the neutral radius 7fb of the hollow portion 7f is equal to or smaller than the neutral radius 7bb of the inner peripheral side partition wall 7b so that the concave-convex deformation of the hollow portion 7f is maximized. If the neutral radius 7fb of the hollow portion 7f and the neutral radius 7bb of the inner peripheral side partition wall 7b are the same, the deformation of the substrate 5 is maximized. If the neutral radius 7fb of the hollow portion 7f is smaller than the neutral radius 7bb of the inner peripheral side partition wall 7b, the maximum point of deformation can be set in the region that holds the substrate.

[0043] However, if the outer diameter 7fa of the hollow portion 7f is less than the neutral radius 7bb of the inner peripheral side partition wall 7b, the substrate 5 will have another inflection point between positions 7g and 7h, which are the starting points of the substrate deformation. In such an arrangement, the overlap difference that can be generated by the bending deformation of the substrate 5 becomes a high-order nonlinear difference curve, which is not suitable for correcting the overlap error. Therefore, it is desirable that the radius (outer diameter 7fa) of the outer peripheral end of the hollow portion 7f be equal to or greater than the neutral radius of the inner peripheral side partition wall 7b (7fa≧7bb).

[0044] There is no particular limitation on the order of applying pressure to the hollow portion 7f and the outer periphery side suction region 7d. As exemplified above, the pressure may be applied to the hollow portion 7f first and then to the outer periphery side suction region 7d, or the pressure may be applied to the outer periphery side suction region 7d first and then to the hollow portion 7f.

[0045] In overlay correction using the hollow portion 7f and the outer periphery suction region 7d, the control unit 14 controls the pressure of each of the hollow portion 7f and the outer periphery suction region 7d based on previously obtained distortion information so as to minimize distortion. The distortion information can be either previously obtained distortion information of the base pattern of the substrate 5 or distortion information converted from Z-direction height distribution information of the substrate 5. The distortion information may be obtained before the substrate 5 is carried into the imprint apparatus 1, or may be obtained using a distortion measurement sensor (not shown) arranged in the imprint apparatus 1.

[0046] It is desirable to complete the pressure control of the hollow portion 7f and the outer circumferential suction region 7d before the completion of the curing process for curing the imprint material in the shot region (imprint region). However, to improve productivity, the pressure control and the curing process of the hollow portion 7f and the outer circumferential suction region 7d may be performed in parallel. In this case, it is desirable to complete the pressure control before the imprint material is completely cured.

[0047] When the substrate chuck 7 is deformed by applying pressure to the hollow portion 7f, the frictional force between the substrate chuck 7 and the substrate 5 may drag the substrate 5 to expand and contract due to the expansion and contraction of the surface of the substrate chuck 7 in the X direction, resulting in unnecessary distortion of the substrate 5. To deal with this unnecessary distortion, after the hollow portion 7f reaches a desired pressure, a "distortion release" control may be performed in which the pressure of the inner periphery side suction region 7e is once released in order to release the distortion of the substrate 5, and then the pressure is returned to the desired pressure again. To release the distortion, for example, the control unit 14 applies a desired pressure to the hollow portion 7f while applying a negative pressure to the inner periphery side suction region 7e, and then releases the negative pressure application to the inner periphery side suction region 7e once, and then applies the negative pressure to the inner periphery side suction region 7e again. It is desirable to perform the hardening process after the distortion release is performed.

[0048] 10, the substrate 5 has a plurality of shot areas, and the imprint process is performed on each of the plurality of shot areas. The pressure control of the hollow portion 7f and the outer periphery side suction area 7d for correcting the overlay error may be performed with a common pressure control value for all the shot areas. However, since the overlay error may differ for each shot area, the pressure control may be performed with a different pressure control value for each shot area.

[0049] Consider a case where the first shot area 15 shown in FIG. 10 is subjected to a curing process by controlling the hollow portion 7f and the outer periphery suction area 7d to a desired pressure, and then the next shot area (second shot area) is imprinted. In this case, if the pressure of the hollow portion 7f and the outer periphery suction area 7d is controlled to a pressure different from that in the first shot area 15, unnecessary distortion may occur in the second shot area. As a countermeasure, the control unit 14 may temporarily release the application of negative pressure to the inner periphery suction area 7e before the curing process of the second shot area is completed. Alternatively, the control unit may return the pressure of the hollow portion 7f to an initial value before the curing process of the second shot area is completed. Alternatively, the control unit 14 may temporarily release the application of negative pressure to the inner periphery suction area 7e and return the pressure of the hollow portion 7f to an initial value before the curing process of the second shot area is completed. This allows unnecessary distortion of the substrate 5 to be released, and the correction accuracy of the overlay error to be improved.

[0050] <Embodiment of the article manufacturing method> The article manufacturing method according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method according to the present embodiment includes a step of transferring a pattern of an original onto a substrate using the above-mentioned lithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.) and a step of processing the substrate onto which the pattern has been transferred in the above step. Furthermore, the manufacturing method includes other well-known steps (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.

[0051] The disclosure herein includes at least the following substrate chuck, lithographic apparatus, and method of manufacturing an article. (Item 1) A substrate chuck that adsorbs and holds a substrate on a substrate holding surface, a plurality of suction regions on the substrate holding surface, the suction regions including a first suction region and a second suction region formed on an inner circumferential side of the first suction region, the first suction region being concentrically partitioned by a partition wall; a pressure space formed inside the substrate chuck below the first suction region and the second suction region, the pressure space being configured to displace the substrate holding surface by application of a negative pressure or a positive pressure thereto; a height of an outer peripheral side partition wall of the first suction region is lower than a height of an inner peripheral side partition wall that separates the first suction region and the second suction region; The radius of the outer peripheral end of the pressure space is equal to or smaller than the neutral radius of the outer peripheral partition wall. A substrate chuck comprising: (Item 2) 2. The substrate chuck according to item 1, wherein a neutral radius of the pressure space is equal to or smaller than a neutral radius of the inner peripheral partition wall. (Item 3) 3. The substrate chuck according to item 1 or 2, wherein a radius of the outer peripheral end of the pressure space is equal to or greater than a neutral radius of the inner peripheral partition wall. (Item 4) 4. The substrate chuck according to any one of items 1 to 3, further comprising a central partition that further divides the second suction region into concentric circles. (Item 5) 5. The substrate chuck according to item 4, wherein the neutral radius of the central partition is equal to or smaller than the radius of the inner peripheral end of the pressure space. (Item 6) 6. The substrate chuck according to any one of items 1 to 5, further comprising a plurality of protrusions formed in the second suction region for supporting the substrate. (Item 7) A lithography apparatus for transferring a pattern of a master onto a substrate, comprising: a substrate chuck that adsorbs and holds the substrate on a substrate holding surface; a control unit that controls a shape of a substrate holding surface of the substrate chuck to deform the substrate held by the substrate chuck; Equipped with The substrate chuck includes: a plurality of suction regions on the substrate holding surface, the suction regions including a first suction region and a second suction region formed on an inner circumferential side of the first suction region, the first suction region being concentrically partitioned by a partition wall; a pressure space formed inside the substrate chuck below the first suction region and the second suction region, the pressure space being configured to displace the substrate holding surface by application of a negative pressure or a positive pressure thereto; an outer circumferential side partition wall of the first suction region is lower than an inner circumferential side partition wall that separates the first suction region and the second suction region; The radius of the outer peripheral end of the pressure space is equal to or smaller than the neutral radius of the outer peripheral partition wall, the control unit deforms the substrate by individually controlling pressures in the first suction region, the second suction region, and the pressure space. 13. A lithography apparatus comprising: (Item 8) 8. The lithography apparatus according to item 7, wherein the control unit individually controls the pressure in the first suction region and the pressure space based on distortion information of the substrate. (Item 9) 9. The lithography apparatus according to item 8, wherein the control unit applies pressure to the first adsorption region following the application of pressure to the pressure space. (Item 10) 9. The lithography apparatus according to item 8, wherein the control unit applies pressure to the pressure space following the application of pressure to the first adsorption region. (Item 11) The lithography apparatus described in any one of items 7 to 10, characterized in that the control unit applies pressure to the pressure space while applying negative pressure to the second adhesion region, then releases the negative pressure application to the second adhesion region, and then applies negative pressure to the second adhesion region again. (Item 12) 12. The lithography apparatus according to any one of items 7 to 11, wherein the lithography apparatus is configured as an imprint apparatus that performs an imprint process to form a pattern in an imprint material on a substrate using a mold that is the original. (Item 13) the imprinting process includes a curing step of curing the imprinting material in a state where the imprinting material is in contact with the mold, Item 13. The lithography apparatus of item 12, wherein the control unit completes pressure control of the first suction region, the second suction region, and the pressure space before the curing process is completed. (Item 14) the imprinting process includes a curing step of curing the imprinting material in a state where the imprinting material is in contact with the mold, the imprint apparatus is configured to perform the imprint processing on each of a plurality of shot areas formed on the substrate, the control unit temporarily stops the application of negative pressure to the second attraction region before the curing step is completed in the imprint process of each shot region. 14. A lithographic apparatus according to item 12 or 13, characterized in that (Item 15) forming a pattern on a substrate using a lithographic apparatus according to any one of items 7 to 14; processing the substrate on which the pattern is formed; and producing an article from the processed substrate.

[0052] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0053] 1: imprint device, 2: irradiation unit, 3: mold, 4: mold holding unit, 5: substrate, 6: substrate stage, 7: substrate chuck, 7a: outer peripheral partition wall, 7b: inner peripheral partition wall, 7c: multiple protrusions, 7f: hollow portion (pressure space)

Claims

1. A substrate chuck that adsorbs and holds a substrate on a substrate holding surface, a plurality of suction regions on the substrate holding surface, the suction regions including a first suction region and a second suction region formed on an inner circumferential side of the first suction region, the first suction region and the second suction region being concentrically partitioned by a partition wall; a pressure space formed inside the substrate chuck below the first suction region and the second suction region, the pressure space being configured to displace the substrate holding surface by application of a negative pressure or a positive pressure thereto; a height of an outer circumferential side partition wall of the first suction region is lower than a height of an inner circumferential side partition wall that separates the first suction region and the second suction region; The radius of the outer circumferential end of the pressure space is equal to or smaller than the neutral radius of the outer circumferential partition wall. A substrate chuck comprising:

2. 2. The substrate chuck according to claim 1, wherein a neutral radius of the pressure space is equal to or smaller than a neutral radius of the inner peripheral side partition wall.

3. 2. The substrate chuck according to claim 1, wherein a radius of the outer peripheral end of the pressure space is equal to or greater than a neutral radius of the inner peripheral partition wall.

4. 2. The substrate chuck according to claim 1, further comprising a central partition wall that divides the second suction region into concentric circles.

5. 5. The substrate chuck according to claim 4, wherein the neutral radius of the central partition is equal to or smaller than the radius of an inner peripheral end of the pressure space.

6. 2. The substrate chuck according to claim 1, further comprising a plurality of protrusions formed in the second suction region for supporting the substrate.

7. A lithography apparatus for transferring a pattern of a master onto a substrate, comprising: a substrate chuck that adsorbs and holds the substrate on a substrate holding surface; a control unit that controls a shape of a substrate holding surface of the substrate chuck to deform the substrate held by the substrate chuck; Equipped with The substrate chuck includes: a plurality of suction regions on the substrate holding surface, the suction regions including a first suction region and a second suction region formed on an inner circumferential side of the first suction region, the first suction region and the second suction region being concentrically partitioned by a partition wall; a pressure space formed inside the substrate chuck below the first suction region and the second suction region, the pressure space being configured to displace the substrate holding surface by application of a negative pressure or a positive pressure thereto; an outer circumferential side partition wall of the first suction region is lower than an inner circumferential side partition wall that separates the first suction region and the second suction region; The radius of the outer peripheral end of the pressure space is equal to or smaller than the neutral radius of the outer peripheral partition wall, the control unit deforms the substrate by individually controlling pressures in the first suction region, the second suction region, and the pressure space.

13. A lithography apparatus comprising:

8. The lithography apparatus according to claim 7 , wherein the control unit controls the pressure in the first attraction region and the pressure space individually based on distortion information of the substrate.

9. The lithography apparatus according to claim 8 , wherein the control unit applies pressure to the first attraction region following the application of pressure to the pressure space.

10. The lithography apparatus according to claim 8 , wherein the control unit applies pressure to the pressure space following the application of pressure to the first attraction region.

11. The lithography apparatus according to claim 7, wherein the control unit applies pressure to the pressure space while applying negative pressure to the second suction region, then releases the negative pressure applied to the second suction region, and then applies negative pressure to the second suction region again.

12. The lithography apparatus according to claim 7 , wherein the lithography apparatus is configured as an imprint apparatus that performs an imprint process for forming a pattern in an imprint material on a substrate by using the original mold.

13. the imprinting process includes a curing step of curing the imprinting material in a state where the imprinting material is in contact with the mold, The lithography apparatus according to claim 12 , wherein the control unit completes pressure control of the first suction region, the second suction region, and the pressure space before the curing step is completed.

14. the imprinting process includes a curing step of curing the imprinting material in a state where the imprinting material is in contact with the mold, the imprint apparatus is configured to perform the imprint processing on each of a plurality of shot areas formed on the substrate, the control unit temporarily stops the application of negative pressure to the second attraction region before the curing step is completed in the imprint processing of each shot region. A lithographic apparatus according to claim 12.

15. Forming a pattern on a substrate using a lithographic apparatus according to any one of claims 7 to 14; processing the substrate on which the pattern is formed; and producing an article from the processed substrate.

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