Display device and manufacturing method thereof

Abstract

One embodiment of the present invention discloses a display device including a substrate, an organic insulating layer disposed on the substrate and having an opening, a first electrode on the organic insulating layer, an auxiliary electrode disposed on the organic insulating layer, a first portion of which overlaps the opening of the organic insulating layer, a bank layer in which a first bank opening overlapping with the first electrode and a second bank opening overlapping with a first portion of the auxiliary electrode are defined, an intermediate layer located on the first electrode and the auxiliary electrode and including a hole exposing a portion of the auxiliary electrode, and a second electrode disposed on the intermediate layer so as to overlap with the first electrode and the auxiliary electrode and in contact with the auxiliary electrode via the hole in the intermediate layer, wherein in a planar view, the hole in the intermediate layer is located within the second bank opening and only partially overlaps with the opening in the organic insulating layer.

Description

[Technical field]

[0001] The present invention relates to a display device and a manufacturing method thereof. [Background technology]

[0002] 2. Description of the Related Art As the field of displays that visually represent various electrical signal information has rapidly developed, a variety of display devices having excellent characteristics such as thinness, light weight, and energy saving have been introduced.

[0003] The display device may include a liquid crystal display device that is not self-emitting and uses light from a backlight, or a self-emitting display device that includes a display element that is capable of self-emitting. The self-emitting display device may include a display element that includes a light-emitting layer. Summary of the Invention [Problem to be solved by the invention]

[0004] SUMMARY OF THE PRESENTLY PREFERRED EMBODIMENT An object of the present invention is to provide a display device and a manufacturing method thereof, and more particularly, to provide a structure and method for a light emitting display device. [Means for solving the problem]

[0005] One embodiment of the present invention discloses a display device including: a substrate; an organic insulating layer disposed on the substrate and having an opening; a first electrode on the organic insulating layer; an auxiliary electrode disposed on the organic insulating layer, with a first portion overlapping the opening of the organic insulating layer; a bank layer defining a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode; an intermediate layer located on the first electrode and the auxiliary electrode, and including a hole exposing a portion of the auxiliary electrode; and a second electrode disposed on the intermediate layer to overlap the first electrode and the auxiliary electrode, and in contact with the auxiliary electrode through the hole in the intermediate layer; and in a plan view, the hole in the intermediate layer only partially overlaps the opening in the organic insulating layer and is located within the second bank opening.

[0006] In a planar view, a portion of the hole in the intermediate layer may be located at the opening in the organic insulating layer, and the remaining portion of the hole in the intermediate layer may be located between the contour line of the opening in the organic insulating layer and the contour line of the second bank opening.

[0007] The organic insulating layer may include an inclined surface adjacent to the opening, and a portion of a contact area between the second electrode and the auxiliary electrode may be located on the inclined surface of the organic insulating layer.

[0008] The center of the hole in the intermediate layer may be located within the opening in the organic insulating layer in a plan view.

[0009] The center of the hole in the intermediate layer may be spaced about 1 μm or more from an inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

[0010] The substrate may include a common voltage line disposed on the substrate and extending in one direction, and an auxiliary common voltage line overlapping the common voltage line and electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line, and the auxiliary common voltage line and the common voltage line may overlap the opening in the organic insulating layer.

[0011] The substrate may further include an inorganic insulating layer in direct contact with an upper surface of the auxiliary common voltage line.

[0012] The auxiliary electrode overlaps the opening of the organic insulating layer and includes a first portion having a width wider than the opening and a second portion integrally formed with the first portion and having a width narrower than the first portion, and the second portion of the auxiliary electrode may be electrically connected to the auxiliary common voltage line through a contact hole penetrating the organic insulating layer and the inorganic insulating layer.

[0013] The intermediate layer may include a light-emitting layer, and the holes in the intermediate layer may include holes penetrating the light-emitting layer.

[0014] Another embodiment of the present invention commences a method for manufacturing a display device, comprising the steps of: forming an organic insulating layer having an opening on a substrate; forming a first electrode on the organic insulating layer; forming an auxiliary electrode on the organic insulating layer, the first portion of which overlaps the opening in the organic insulating layer; forming a bank layer having a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode; forming an intermediate layer so as to be located on the first electrode and the auxiliary electrode; forming a hole in the intermediate layer that exposes a portion of the auxiliary electrode; and forming a second electrode on the intermediate layer so as to contact the auxiliary electrode through the hole in the intermediate layer; wherein, in a planar view, the hole in the intermediate layer only partially overlaps the opening in the organic insulating layer and is located within the second bank opening.

[0015] The step of forming the hole may include a step of irradiating a laser beam onto the intermediate layer, and a portion of the laser beam may be located, in a plan view, between an outline of the opening in the organic insulating layer and an outline of the second bank opening.

[0016] The laser beam may be centered within the second bank opening.

[0017] The center of the hole in the intermediate layer may be spaced about 1 μm or more from an inner edge of the organic insulating layer that defines the opening in the organic insulating layer.

[0018] The organic insulating layer may include an inclined surface adjacent to the opening, and in the step of forming the second electrode, a portion of a contact area between the second electrode and the auxiliary electrode may be located on the inclined surface of the organic insulating layer.

[0019] The auxiliary electrode may include a first portion overlapping the opening in the organic insulating layer and having a width greater than the opening, and a second portion integrally formed with the first portion but having a width smaller than the first portion.

[0020] The method may further include forming a common voltage line disposed on the substrate and extending in one direction, and forming an auxiliary common voltage line overlapping the common voltage line and electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line, and the auxiliary common voltage line and the common voltage line may overlap the opening in the organic insulating layer.

[0021] The method may further include forming an inorganic insulating layer on the auxiliary common voltage line.

[0022] The method may further include forming a contact hole penetrating the organic insulating layer and the inorganic insulating layer such that the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line.

[0023] In a plan view, a portion of the outline of the opening in the organic insulating layer may overlap the hole in the intermediate layer.

[0024] The step of forming the intermediate layer may include a step of forming a light-emitting layer so as to overlap the first electrode and the auxiliary electrode, and the step of forming the hole may include a step of forming a hole penetrating the light-emitting layer.

[0025] Other aspects, features and advantages in addition to those described above will become apparent from the following drawings, claims and detailed description of the invention. Effect of the Invention

[0026] According to the embodiment of the present invention, when forming a hole in the intermediate layer, the process constraint due to the opening size of the insulating layer can be reduced, and the quality of the contact area between the auxiliary electrode and the second electrode on the auxiliary electrode can be ensured. The above-mentioned effects are merely examples, and the scope of the present invention is not limited by such effects. [Brief description of the drawings]

[0027] [Figure 1]1 is a perspective view illustrating a display device according to an embodiment of the present invention; [Diagram 2] 1 is a cross-sectional view illustrating a pixel of a display device according to an embodiment of the present invention; [Diagram 3] 3 is a diagram showing each optical part of the color converting and transmitting layer of FIG. 2. [Figure 4] 2 is an equivalent circuit diagram showing a light emitting diode and a pixel circuit electrically connected to the light emitting diode included in a display device according to an embodiment of the present invention; [Diagram 5] 1 is a plan view illustrating a light emitting diode and wiring disposed around the diode in a display device according to an embodiment of the present invention; [Figure 6] 6 is a cross-sectional view of the display device taken along line AA' in FIG. 5. [Figure 7] 2 is a plan view illustrating a structure of a common voltage line and an auxiliary electrode of a display device according to an embodiment of the present invention; [Figure 8] 8 is a cross-sectional view of the display device taken along line BB' in FIG. 7. [Figure 9] 8 is a cross-sectional view of the display device taken along line CC' in FIG. 7. [Figure 10] 4A to 4C are cross-sectional views of a display device in a manufacturing process according to an embodiment of the present invention. [Figure 11] 4A to 4C are cross-sectional views of a display device in a manufacturing process according to an embodiment of the present invention. [Figure 12] 4A to 4C are cross-sectional views of a display device in a manufacturing process according to an embodiment of the present invention. [Figure 13] 4A to 4C are cross-sectional views of a display device in a manufacturing process according to an embodiment of the present invention. [Figure 14] 4A to 4C are cross-sectional views of a display device in a manufacturing process according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The present invention can be modified in various ways and can have various embodiments, and specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. The advantages and features of the present invention, as well as methods for achieving them, will become apparent from the following detailed description of the embodiments in conjunction with the drawings. However, the present invention is not limited to the following embodiments, and may be embodied in various forms.

[0029] Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. When describing with reference to the drawings, identical or corresponding components are denoted by the same reference numerals and duplicate descriptions thereof will be omitted.

[0030] In the following embodiments, the terms "first", "second", etc. are not used in a limiting sense but are used for the purpose of distinguishing one component from another component.

[0031] In the following embodiments, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0032] In the following embodiments, terms such as "comprise" or "have" mean the presence of features or components described in the specification, and do not preclude the possibility of adding one or more other features or components.

[0033] In the following embodiments, when a part such as a film, region, or component is said to be on or above another part, this does not only include the case where it is directly on top of the other part, but also the case where another film, region, component, etc. is interposed between them.

[0034] In the drawings, the size of components may be exaggerated or reduced for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and the present invention is not necessarily limited to what is shown in the drawings.

[0035] When an embodiment can be implemented differently, the order of certain steps may be performed differently than that described. For example, two steps described in succession may be performed substantially simultaneously or in the reverse order from that described.

[0036] In the following embodiments, when a membrane, region, component, etc. is said to be connected, it includes not only the case where the membrane, region, component, etc. are directly connected, but also the case where the membrane, region, component, etc. are indirectly connected by interposing another membrane, region, component, etc. between them. For example, in this specification, when a membrane, region, component, etc. is said to be electrically connected, it includes not only the case where the membrane, region, component, etc. are directly electrically connected, but also the case where the membrane, region, component, etc. are indirectly electrically connected by interposing another membrane, region, component, etc. between them.

[0037] FIG. 1 is a perspective view illustrating a display device according to an embodiment of the present invention.

[0038] 1, the display device DV may include a display area DA and a non-display area NDA outside the display area DA. The display device DV may provide an image to the display area DA through a plurality of pixel arrays arranged two-dimensionally on an xy plane. The plurality of pixels include a first pixel, a second pixel, and a third pixel. For convenience of explanation, the following description will be given assuming that the first pixel is a red pixel Pr, the second pixel is a green pixel Pg, and the third pixel is a blue pixel Pb.

[0039] The red pixel Pr, the green pixel Pg, and the blue pixel Pb are areas that emit red, green, and blue light, respectively, and the display device DV can provide an image using the light emitted from the pixels.

[0040] The non-display area NDA is an area that does not provide an image and may entirely surround the display area DA. Drivers or main voltage lines for providing electrical signals or power to pixel circuits may be disposed in the non-display area NDA. The non-display area NDA may include pads that are areas to which electronic elements or printed circuit boards are electrically connected.

[0041] The display area DA may have a polygonal shape including a square as shown in Fig. 1. For example, the display area DA may be a rectangle whose width is longer than its height, a rectangle whose width is shorter than its height, or a square. Alternatively, the display area DA may have various shapes such as an ellipse or a circle.

[0042] FIG. 2 is a cross-sectional view illustrating a pixel of a display device according to an embodiment of the present invention.

[0043] 2, the display device DV may include a circuit layer 200 on a substrate 100. The circuit layer 200 may include first to third pixel circuits PC1, PC2, and PC3, which may be electrically connected to first to third light emitting diodes LED1, LED2, and LED3 of the light emitting diode layer 303, respectively.

[0044] The first to third light emitting diodes LED1, LED2, and LED3 may include organic light emitting diodes including an organic material. In another embodiment, the first to third light emitting diodes LED1, LED2, and LED3 may also be inorganic light emitting diodes including an inorganic material. The inorganic light emitting diode may include a PN junction diode including an inorganic semiconductor-based material. When a voltage is applied to the PN junction diode in the forward direction, holes and electrons are injected, and the energy generated by the recombination of the holes and electrons is converted into light energy to emit light of a predetermined color. The inorganic light emitting diode may have a width of several to several hundred μm or several to several hundred nm. In some embodiments, the light emitting diode LED may also be a light emitting diode including quantum dots (e.g., the first to third light emitting diodes LED1, LED2, and LED3). As described above, the light emitting layer of the light emitting diode LED (e.g., the first to third light emitting diodes LED1, LED2, and LED3) may include an organic material, an inorganic material, a quantum dot, an organic material and a quantum dot, or an inorganic material and a quantum dot.

[0045] The first to third light emitting diodes LED1, LED2, and LED3 may emit light of the same color. For example, the light (e.g., blue light Lb) emitted from the first to third light emitting diodes LED1, LED2, and LED3 may pass through the encapsulation layer 400 on the light emitting diode layer 303 and the color conversion-transmission layer 500.

[0046] The color conversion-transmission layer 500 may include an optical portion that converts or does not convert the color of light (e.g., blue light Lb) emitted from the light emitting diode layer 303 and transmits it. For example, the color conversion-transmission layer 500 may include a color conversion portion that converts the light (e.g., blue light Lb) emitted from the light emitting diode layer 303 into light of a different color, and a transmission portion that transmits the light (e.g., blue light Lb) emitted to the light emitting diode layer 303 without converting the color. The color conversion-transmission layer 500 may include a first color conversion portion 510 corresponding to the red pixel Pr, a second color conversion portion 520 corresponding to the green pixel Pg, and a transmission portion 530 corresponding to the blue pixel Pb. The first color conversion portion 510 may convert the blue light Lb into red light Lr, and the second color conversion portion 520 may convert the blue light Lb into green light Lg. The transmission portion 530 may pass the blue light Lb without converting it.

[0047] The color layer 600 may be disposed on the color converting-transmitting layer 500. The color layer 600 may include first to third color filters 610, 620, and 630 of different colors. For example, the first color filter 610 is a red color filter, the second color filter 620 is a green color filter, and the third color filter 630 is a blue color filter.

[0048] The color purity of the light color-converted and transmitted by the color conversion-transmission layer 500 may be improved as it passes through the first to third color filters 610, 620, and 630, respectively. In addition, the color layer 600 may prevent or minimize the reflection of external light (e.g., light incident from the outside of the display device DV toward the display device DV) from being viewed by a user.

[0049] The display device DV may include a light-transmitting base layer 700 on the color layer 600. The light-transmitting base layer 700 may include glass or a light-transmitting organic material. For example, the light-transmitting base layer 700 may include a light-transmitting organic material such as an acrylic resin.

[0050] In one embodiment, the light-transmitting substrate layer 700 is a type of substrate, and after the color layer 600 and the color converting-transmitting layer 500 are formed on the light-transmitting substrate layer 700, the color converting-transmitting layer 500 can be arranged to face the sealing layer 400.

[0051] In another embodiment, the color conversion-transmission layer 500 and the color layer 600 may be sequentially formed on the encapsulation layer 400, and then the light-transmitting base layer 700 may be directly coated and cured on the color layer 600. In some embodiments, another optical film, for example, an AR (anti-reflection) film, may be disposed on the light-transmitting base layer 700.

[0052] Display devices DV having the above-described structure may include televisions, billboards, cinema screens, monitors, tablet PCs, notebook computers, etc.

[0053] FIG. 3 shows the optical parts of the color converting and transmitting layer of FIG.

[0054] 3, the first color converter 510 may convert incident blue light Lb into red light Lr. The first color converter 510 may include a first photosensitive polymer 1151, first quantum dots 1152 dispersed in the first photosensitive polymer 1151, and first scattering particles 1153, as shown in FIG.

[0055] The first quantum dots 1152 may be excited by the blue light Lb and isotropically emit red light Lr having a wavelength longer than the wavelength of the blue light Lb. The first photosensitive polymer 1151 may be an organic material having optical transparency. The first scattering particles 1153 may scatter the blue light Lb that is not absorbed by the first quantum dots 1152, and further excite more first quantum dots 1152, thereby increasing the color conversion efficiency. The first scattering particles 1153 may be, for example, titanium oxide (TiO2 ) or metal particles. The first quantum dots 1152 can be selected from a II-VI compound, a III-V compound, a IV-VI compound, a group IV element, a group IV compound, and combinations thereof.

[0056] The second color converter 520 may convert the incident blue light Lb into green light Lg. The second color converter 520 may include a second photosensitive polymer 1161, and second quantum dots 1162 and second scattering particles 1163 dispersed in the second photosensitive polymer 1161, as shown in FIG.

[0057] The second quantum dots 1162 may be excited by the blue light Lb to isotropically emit green light Lg having a wavelength longer than that of the blue light Lb. The second photosensitive polymer 1161 may be an organic material having optical transparency.

[0058] The second scattering particles 1163 scatter the blue light Lb that is not absorbed by the second quantum dots 1162, and further excite more of the second quantum dots 1162, thereby increasing the color conversion efficiency. The second scattering particles 1163 may be, for example, titanium oxide (TiO 2 ) or metal particles. The second quantum dots 1162 can be selected from II-VI compounds, III-V compounds, IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0059] In some embodiments, the first quantum dot 1152 and the second quantum dot 1162 may be the same material. In that case, the size of the first quantum dot 1152 may be larger than the size of the second quantum dot 1162.

[0060] The transmissive portion 530 may transmit the blue light Lb incident thereon without converting the blue light Lb. As illustrated in FIG. 3, the transmissive portion 530 may include a third photosensitive polymer 1171 having third scattering particles 1173 dispersed therein. The third photosensitive polymer 1171 may be an organic material having optical transparency, such as silicone resin or epoxy resin, and may be the same material as the first and second photosensitive polymers 1151 and 1161. The third scattering particles 1173 scatter and emit the blue light Lb, and may be the same material as the first and second scattering particles 1153 and 1163.

[0061] FIG. 4 is an equivalent circuit diagram showing a light emitting diode included in a display device according to an embodiment of the present invention and a pixel circuit electrically connected to the light emitting diode.

[0062] 4, a first electrode (e.g., anode) of a light emitting diode, e.g., a light emitting diode LED, may be connected to a pixel circuit PC, and a second electrode (e.g., cathode) of the light emitting diode LED may be connected to a common voltage line VSL that provides a common power supply voltage ELVSS. The light emitting diode LED may emit light with a brightness corresponding to the amount of current supplied from the pixel circuit PC.

[0063] The light emitting diode LED of FIG. 4 may correspond to the first to third light emitting diodes LED1, LED2, and LED3 shown in FIG. 2, respectively, and the pixel circuit PC of FIG. 4 may correspond to the first to third pixel circuits PC1, PC2, and PC3 shown in FIG. 2, respectively.

[0064] The pixel circuit PC may control the amount of current flowing from the driving power supply voltage ELVDD to the common power supply voltage ELVSS via the light emitting diode LED in response to a data signal. The pixel circuit PC may include a driving transistor M1, a switching transistor M2, a sensing transistor M3, and a storage capacitor Cst.

[0065] Each of the driving transistor M1, the switching transistor M2, and the sensing transistor M3 may be an oxide semiconductor thin film transistor including a semiconductor layer made of an oxide semiconductor, or a silicon semiconductor thin film transistor including a semiconductor layer made of polysilicon. Depending on the type of the transistor, the first electrode may be one of a source electrode and a drain electrode, and the second electrode may be the other of the source electrode and the drain electrode.

[0066] A first electrode of the driving transistor M1 may be connected to a driving voltage line VDL that supplies a driving power supply voltage ELVDD, and a second electrode of the driving transistor M1 may be connected to a first electrode of the light emitting diode LED. A gate electrode of the driving transistor M1 may be connected to a first node N1. The driving transistor M1 may control the amount of current flowing through the light emitting diode LED from the driving power supply voltage ELVDD in response to the voltage of the first node N1.

[0067] The switching transistor M2 may be a switching transistor. A first electrode of the switching transistor M2 may be connected to the data line DL, and a second electrode of the switching transistor M2 may be connected to a first node N1. A gate electrode of the switching transistor M2 may be connected to a scan line SL. When a scan signal is provided to the scan line SL, the switching transistor M2 may be turned on to electrically connect the data line DL and the first node N1.

[0068] The sensing transistor M3 may also serve as an initialization transistor and / or a sensing transistor. A first electrode of the sensing transistor M3 may be coupled to the second node N2, a second electrode of the sensing transistor M3 may be coupled to the sensing line SEL, and a gate electrode of the sensing transistor M3 may be coupled to the control line CL.

[0069] The storage capacitor Cst may be connected between the first node N1 and the second node N2. For example, a first capacitor electrode of the storage capacitor Cst may be connected to the gate electrode of the driving transistor M1, and a second capacitor electrode of the storage capacitor Cst may be connected to a first electrode of the light emitting diode LED.

[0070] 4, the driving transistor M1, the switching transistor M2, and the sensing transistor M3 are illustrated as NMOS, but the present invention is not limited thereto. For example, at least one selected from the driving transistor M1, the switching transistor M2, and the sensing transistor M3 may be a PMOS.

[0071] Although three transistors are shown in Figure 4, the invention is not so limited, and the pixel circuit PC may include four or more transistors.

[0072] FIG. 5 is a plan view showing a light emitting diode and wiring arranged around the diode in a display device according to an embodiment of the present invention.

[0073] 5, common voltage lines VSL are arranged in the display area DA, and each of the common voltage lines VSL extends along the y direction. The common voltage lines VSL are arranged spaced apart from each other, and a light emitting diode, for example, an organic light emitting diode, may be arranged between two adjacent common voltage lines VSL. In one embodiment, FIG. 5 illustrates that first to third organic light emitting diodes OLED1, OLED2, and OLED3 are arranged between two adjacent common voltage lines VSL.

[0074] Auxiliary lines extending in a direction (e.g., x-direction) intersecting the common voltage line VSL may be disposed in the display area DA. In one embodiment, Fig. 5 illustrates that the first and second auxiliary lines AL1 and AL2 extend in the x-direction, and the first and second auxiliary lines AL1 and AL2 may be spaced apart from each other with the first to third organic light emitting diodes OLED1, OLED2, and OLED3 in between. Each common voltage line VSL may be electrically connected to at least one of the first and second auxiliary lines AL1 and AL2.

[0075] The structure shown in Fig. 5 shows a part of the display area DA, and the display area DA can be seen as a repeating arrangement of the structure of Fig. 5. For example, a plurality of common voltage lines VSL and a plurality of auxiliary lines are electrically connected while crossing each other in the display area DA, and the common voltage lines VSL and the auxiliary lines may form a mesh structure in a plan view. If the display area DA has a relatively large area, a voltage drop of the common voltage provided through the common voltage lines VSL may occur, but by forming a mesh structure in a plan view of the common voltage lines VSL and the auxiliary lines, the above-mentioned voltage drop may be prevented or minimized.

[0076] The auxiliary electrode 180 may be disposed to overlap (overlap) a portion of the common voltage line VSL. The auxiliary electrode 180 may be electrically connected to the common voltage line VSL using a first contact hole CT1 and a second contact hole CT2, and may receive power from the common voltage line VSL. The second electrodes (e.g., cathodes) of the light emitting diodes, for example, the first to third organic light emitting diodes OLED1, OLED2, and OLED3, may be electrically connected to the common voltage line VSL through the auxiliary electrode 180.

[0077] The common voltage line VSL may be electrically connected to an auxiliary common voltage line VSL-A arranged to overlap the common voltage line VSL. For example, the auxiliary common voltage line VSL-A may be connected to the common voltage line VSL through a second contact hole CT2.

[0078] The first electrodes 150 (e.g., anodes) of the light emitting diodes, for example, the first to third organic light emitting diodes OLED1, OLED2, and OLED3, may be electrically connected to pixel circuits disposed thereunder through sixth contact holes CT6. The pixel circuits connected to the first to third organic light emitting diodes OLED1, OLED2, and OLED3 may include a plurality of transistors and storage capacitors, as described above with reference to FIG.

[0079] FIG. 6 is a cross-sectional view of the display device taken along line AA' in FIG.

[0080] 6, a light emitting diode, for example, a first organic light emitting diode OLED1, is disposed on a substrate 100, and a pixel circuit PC may be disposed between the substrate 100 and the first organic light emitting diode OLED1. In this regard, FIG 6 illustrates a driving transistor M1 and a storage capacitor Cst included in the pixel circuit PC. Although not illustrated in FIG 6, a second organic light emitting diode OLED2 and a pixel circuit connected thereto, and a third organic light emitting diode OLED3 and a pixel circuit connected thereto may also include the same structure as the pixel circuit PC illustrated in FIG 6.

[0081] The substrate 100 can be made of a material such as glass, metal, or organic. For example, the substrate 100 can be made of SiO 2 The optical fiber may include a glass-based material, or may include a variety of materials having flexible or bendable properties, such as polymer resins.

[0082] The driving transistor M1 may include a semiconductor layer A1 and a gate electrode G1. The semiconductor layer A1 may include an oxide-based material or a silicon-based material (e.g., amorphous silicon, polysilicon). For example, the semiconductor layer A1 may include an oxide of at least one material selected from the group including indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), and zinc (Zn).

[0083] The semiconductor layer A1 may include a channel region C1, and first and second low-resistance regions B1 and D1 disposed on either side of the channel region C1. The first and second low-resistance regions B1 and D1 have a lower resistance than the channel region C1, and one of the first and second low-resistance regions B1 and D1 is a source region and the other is a drain region.

[0084] The semiconductor layer A1 is located on a first insulating layer 101 on a substrate 100. The first insulating layer 101 may prevent impurities from penetrating into the semiconductor layer A1. The first insulating layer 101 may include an inorganic insulator, such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0085] A second insulating layer 103 may be interposed between the semiconductor layer A1 and the gate electrode G1. The second insulating layer 103 is also a type of gate insulating layer and may include an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0086] The gate electrode G1 may overlap the channel region C1 of the semiconductor layer A1. The gate electrode G1 may include molybdenum (Mo), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer structure including the above-mentioned materials.

[0087] Any one of the first and second low resistance regions B1, D1 of the semiconductor layer A1 may be electrically connected to a driving voltage line VDL. The driving voltage line VDL may be disposed under the first insulating layer 101. FIG. 4 illustrates that the driving voltage line VDL is connected to the second low resistance region D1 via a connecting electrode CE on the third insulating layer 105.

[0088] The driving voltage line VDL may include a metal material such as molybdenum (Mo), copper (Cu), or titanium (Ti). For example, the driving voltage line VDL may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) that is thicker than the titanium layer. In another embodiment, the driving voltage line VDL may include a multi-layered structure of one or more metal layers including the aforementioned metal materials and a transparent conductive oxide layer such as ITO disposed on the aforementioned layer or layers. The third insulating layer 105 may include an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride.

[0089] When the second low-resistance region D1 is a source region (or drain region), the connecting electrode CE may be a source electrode (or drain electrode) of the driving transistor M1, and when the second low-resistance region D1 is a drain region (or source region), the connecting electrode CE may be a drain electrode (or source electrode) of the driving transistor M1. The connecting electrode CE may be connected to the driving voltage line VDL through a third contact hole CT3 penetrating the first to third insulating layers 101, 103, and 105, and may be connected to a part (e.g., the second low-resistance region) D1 of the semiconductor layer A1 of the driving transistor M1 through a fourth contact hole CT4 penetrating the second and third insulating layers 103 and 105. The connecting electrode CE may include a metal material such as molybdenum (Mo), copper (Cu), or titanium (Ti). For example, the connecting electrode CE may include a multi-layer structure including a titanium layer and a copper layer. In another embodiment, the connecting electrode CE may include a multi-layer structure of one or more metal layers including the above-mentioned metal materials and a transparent conductive oxide layer, such as ITO, disposed on the above-mentioned layer or layers.

[0090] The storage capacitor Cst includes a first capacitor electrode CE1 and a second capacitor electrode CE2 overlapping the first capacitor electrode CE1 with at least one insulating layer interposed therebetween. The first capacitor electrode CE1 may be formed on the same layer as the gate electrode G1 and may include the same material. The first capacitor electrode CE1 may include molybdenum (Mo), copper (Cu), titanium (Ti), etc., and may have a single-layer or multi-layer structure including the above-mentioned materials.

[0091] In some embodiments, the second capacitor electrode CE2 may include two sub-capacitor electrodes CE2a and CE2b disposed below and above the first capacitor electrode CE1 so as to sandwich the first capacitor electrode CE1. One of the sub-capacitor electrodes CE2a and CE2b (hereinafter referred to as a first sub-capacitor electrode; CE2a) may be disposed between the substrate 100 and the first insulating layer 101, and the other sub-capacitor electrode (hereinafter referred to as a second sub-capacitor electrode; CE2b) may be disposed on the third insulating layer 105.

[0092] The first sub-capacitor electrode CE2a and the second sub-capacitor electrode CE2b may include a single-layer or multi-layer structure including the above-mentioned materials, such as molybdenum (Mo), copper (Cu), titanium (Ti), etc. In one embodiment, the first sub-capacitor electrode CE2a may be disposed in the same layer as the driving voltage line VDL and may include the same material.

[0093] The second sub-capacitor electrode CE2b may be connected to the first sub-capacitor electrode CE2a through a fifth contact hole CT5 penetrating the first to third insulating layers 101, 103, and 105. A capacitance may be formed between the first sub-capacitor electrode CE2a and the first capacitor electrode CE1, which overlap with each other with the first and second insulating layers 101 and 103 interposed therebetween, and a capacitance may be formed between the first capacitor electrode CE1 and the second sub-capacitor electrode CE2b, which overlap with each other with the third insulating layer 105 interposed therebetween. In this manner, since the second capacitor electrode CE2 includes a plurality of sub-capacitor electrodes, the capacitance of the storage capacitor Cst may be improved.

[0094] The fourth insulating layer 107 is disposed on the pixel circuit PC including the driving transistor M1 and the storage capacitor Cst. The fourth insulating layer 107 may include an inorganic insulator such as silicon nitride, silicon oxide, and / or silicon oxynitride. The fourth insulating layer 107 may prevent wiring including a metal (e.g., copper, etc.) that may be damaged by an etching solution from being exposed to an etching environment during the manufacturing process of the display device.

[0095] The fifth insulating layer 109 is disposed on the fourth insulating layer 107 and may include an organic insulator. The fifth insulating layer 109 may include an organic insulator such as acrylic, BCB (benzocyclobutene), polyimide, or HMDSO (hexamethyldisiloxane).

[0096] A first electrode 150 of the light emitting diode is formed on the fifth insulating layer 109. In this regard, FIG. 6 illustrates the first electrode 150 of the first organic light emitting diode OLED1.

[0097] The first electrode 150 may be connected to the pixel circuit PC, for example, to the second sub-capacitor electrode CE2b of the storage capacitor Cst, through a sixth contact hole CT6 penetrating the fourth insulating layer 107 and the fifth insulating layer 109.

[0098] The first electrode 150 is made of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3In another embodiment, the first electrode 150 may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or a combination thereof. In another embodiment, the first electrode 150 may include a reflective film including ITO, IZO, ZnO, or In, above / below the aforementioned reflective film. 2 O 3 For example, the first electrode 150 may have a three-layer structure in which an ITO layer, a silver (Ag) layer, and an ITO layer are stacked.

[0099] The bank layer BNL covers the edge of the first electrode 150, and may include a first bank opening B-OP1 overlapping the central portion of the first electrode 150. The bank layer BNL may include an organic insulator such as polyimide.

[0100] The intermediate layer 160 may be in contact with the first electrode 150 through the first bank opening B-OP1 of the bank layer BNL. The stacked structure of the first electrode 150, the intermediate layer 160, and the second electrode 170 located in the first bank opening B-OP1 may emit light of a predetermined color. The first bank opening B-OP1 of the bank layer BNL may correspond to a light emitting area EA from which light is emitted. For example, the size (or width) of the first bank opening B-OP1 of the bank layer BNL may correspond to the size (or width) of the light emitting area EA.

[0101] The intermediate layer 160 may include an emitting layer 162. The emitting layer 162 may include a polymer or small molecule organic material that emits light of a predetermined color. As described above with reference to FIG. 2, when the light emitting diode layer 300 (FIG. 2) emits blue light, the emitting layer 162 may include a polymer or small molecule organic material that emits blue light.

[0102] The intermediate layer 160 may further include at least one functional layer. In one embodiment, as illustrated in Fig. 4, the intermediate layer 160 may further include a first functional layer 161 below the light-emitting layer 162 and / or a second functional layer 163 above the light-emitting layer 162. The first functional layer 161 may be interposed between the first electrode 150 and the light-emitting layer 162, and the second functional layer 163 may be interposed between the light-emitting layer 162 and a second electrode 170 described below.

[0103] The first functional layer 161 may include a hole transport layer (HTL) and / or a hole injection layer (HIL). The second functional layer 163 may include an electron transport layer (ETL) and / or an electron injection layer (EIL).

[0104] The second electrode 170 may be made of a conductive material with a low work function. For example, the second electrode 170 may include a (semi-)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Alternatively, the second electrode 170 may include a (semi-)transparent layer containing the aforementioned material and a conductive material such as ITO, IZO, ZnO, or In. 2 O 3 It may further include layers such as:

[0105] The encapsulation layer 400 may be disposed on the second electrode 170. The encapsulation layer 400 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. In one embodiment, FIG. 6 illustrates that the encapsulation layer 400 includes a first inorganic encapsulation layer 410, a second inorganic encapsulation layer 430, and an organic encapsulation layer 420 between the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430.

[0106] The first and second inorganic encapsulation layers 410, 430 may each include one or more inorganic insulators, which may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and / or silicon oxynitride.

[0107] The organic encapsulation layer 420 may include a polymer-based material. Examples of polymer-based materials include acrylic resin, epoxy resin, polyimide, and polyethylene. For example, the organic encapsulation layer 420 may include an acrylic resin, such as polymethyl methacrylate or polyacrylic acid. The organic encapsulation layer 420 may be formed by curing a monomer or applying a polymer.

[0108] An intermediate material layer 501 may be disposed on the encapsulation layer 400. The intermediate material layer 501 may include an inorganic insulator and / or an organic insulator. A color conversion-transmission layer 500 is disposed on the intermediate material layer 501. In this regard, FIG. 6 illustrates a light-shielding portion 540 of the color conversion-transmission layer 500 and a first color conversion portion 510 disposed in an opening region defined by the light-shielding portion 540.

[0109] A barrier layer 550 may be formed over the color converting-transmitting layer 500. The barrier layer 550 may include an inorganic insulator such as silicon oxide, silicon nitride, and / or silicon oxynitride.

[0110] The color layer 600 may be disposed on the color conversion-transmission layer 500. In this regard, Fig. 6 illustrates a light-shielding portion 640 of the color layer 600 and a first color filter 610 located in an opening region defined by the light-shielding portion 640. The light-shielding portion 540 (hereinafter referred to as a first light-shielding portion) of the color conversion-transmission layer 500 and the light-shielding portion 640 (hereinafter referred to as a second light-shielding portion) of the color layer 600 are disposed to overlap each other.

[0111] The first light-shielding part 540 and the second light-shielding part 640 may each include a light-shielding material. For example, the first light-shielding part 540 and the second light-shielding part 640 may each include an organic material having a predetermined color such as black. For example, the first light-shielding part 540 and the second light-shielding part 640 may each include a polyimide (PI)-based binder and a mixture of red, green, and blue pigments. Alternatively, the first light-shielding part 540 and the second light-shielding part 640 may each include a mixture of a cardo-based binder resin, a lactam-based black pigment, and a blue pigment. Alternatively, the first light-shielding part 540 and the second light-shielding part 640 may each include carbon black.

[0112] In one embodiment, the first light-shielding portion 540 and the second light-shielding portion 640 may include the same material. In another embodiment, the second light-shielding portion 640 may have a structure in which at least two or more color filters forming the color layer 600 are stacked. For example, the second light-shielding portion 640 may not include the above-mentioned light-shielding material, and may have a structure in which two or three color filter materials selected from the first to third color filters 610, 620, and 630 (FIG. 2) are stacked.

[0113] The light-transmitting base layer 700 may include glass or a light-transmitting organic material. For example, the light-transmitting base layer 700 may include a light-transmitting organic material such as an acrylic resin.

[0114] FIG. 7 is a plan view showing a structure of a common voltage line and an auxiliary electrode of a display device according to an embodiment of the present invention, which corresponds to an enlarged plan view of a part of the display device shown in FIG.

[0115] 5 and 7, the common voltage line VSL extending along the y direction may overlap with the auxiliary electrode 180 and the auxiliary common voltage line VSL-A. The length (length in the y direction) of the auxiliary common voltage line VSL-A may be shorter than the length (length in the y direction) of the common voltage line VSL. The width (width in the x direction, W2) of the auxiliary common voltage line VSL-A may be different from the width W1 of the common voltage line VSL. In one embodiment, the width W2 of the auxiliary common voltage line VSL-A may be narrower than the width W1 of the common voltage line VSL.

[0116] The common voltage line VSL and the auxiliary common voltage line VSL-A, which are arranged on different layers, are connected through a first contact hole CT1 penetrating an insulating layer arranged between them, thereby reducing the resistance of the common voltage line VSL.

[0117] The auxiliary electrode 180 is disposed on the common voltage line VSL and the auxiliary common voltage line VSL-A. The auxiliary electrode 180 may overlap the common voltage line VSL and / or the auxiliary common voltage line VSL-A. The auxiliary electrode 180 may have a different planar shape from the common voltage line VSL and the auxiliary common voltage line VSL-A. For example, as shown in FIG. 7, the auxiliary electrode 180 may include a relatively wide first portion (hereinafter referred to as a wide portion) 180A and a relatively narrow second portion (hereinafter referred to as a narrow portion) 180B in a plan view. The wide portion 180A and the narrow portion 180B are integrally connected.

[0118] The width (width in the x-direction) W3 of the wide portion 180A is wider than the width (width in the x-direction) W4 of the narrow portion 180B. The width W3 of the wide portion 180A may be wider than the width of the common voltage line VSL and / or the auxiliary common voltage line VSL-A. In one embodiment, FIG. 7 shows that the width W3 of the wide portion 180A is wider than the width W2 of the auxiliary common voltage line VSL-A and narrower than the width W1 of the common voltage line VSL. In another embodiment, the width W3 of the wide portion 180A may be wider than the width W2 of the auxiliary common voltage line VSL-A and the width W1 of the common voltage line VSL, respectively.

[0119] A portion of the auxiliary electrode 180 may be connected to one of the common voltage line VSL and the auxiliary common voltage line VSL-A having the same voltage level. For example, the narrow portion 180B of the auxiliary electrode 180 may be connected to the auxiliary common voltage line VSL-A through the second contact hole CT2.

[0120] Another portion of the auxiliary electrode 180 may be connected to the second electrode 170 (FIG. 6) of the light emitting diode. For example, the second electrode 170 (FIG. 6) of the light emitting diode may be connected to the wide portion 180A of the auxiliary electrode 180 through a hole 160H formed in the intermediate layer 160 (FIG. 6) disposed under the second electrode.

[0121] In a plan view, the hole 160H of the intermediate layer may overlap the wide portion 180A of the auxiliary electrode 180, but may be located within the second bank opening B-OP2 of the bank layer BNK (FIG. 6). In a plan view, the hole 160H of the intermediate layer may overlap the second bank opening B-OP2 as a whole. Meanwhile, the hole 160H of the intermediate layer may only partially overlap the opening 109OP of the fifth insulating layer 109. Specifically, a part of the hole 160H of the intermediate layer may overlap the opening 109OP of the fifth insulating layer 109, and the remaining part of the hole 160H may not overlap the opening 109OP of the fifth insulating layer 109. The hole 160H of the intermediate layer may be disposed regardless of the size (or width) of the opening 109OP of the fifth insulating layer 109. The specific structures of the auxiliary electrode 180 and its peripheral components will be described with reference to FIGS. 8 and 9.

[0122] 8 is a cross-sectional view of the display device taken along line BB' in FIG. 7, and FIG. 9 is a cross-sectional view of the display device taken along line CC' in FIG.

[0123] 7, 8 and 9, a common voltage line VSL is disposed on a substrate 100. The common voltage line VSL may be in direct contact with the upper surface of the substrate 100. The common voltage line VSL may include a metal material such as molybdenum (Mo), copper (Cu), titanium (Ti), etc. The common voltage line VSL may include the same material as the driving voltage line VDL described above with reference to FIG. 6. The common voltage line VSL may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) thicker than the titanium layer. In another embodiment, the common voltage line VSL may include a multi-layer structure of one or more metal layers including the above-mentioned metal material and a transparent conductive oxide layer such as ITO disposed on the above-mentioned one or more metal layers.

[0124] An auxiliary common voltage line VSL-A may be disposed on the common voltage line VSL, and at least one insulating layer may be disposed between the common voltage line VSL and the auxiliary common voltage line VSL-A. In this regard, Figures 8 and 9 illustrate that first to third insulating layers 101, 103, and 105 are disposed between the common voltage line VSL and the auxiliary common voltage line VSL-A.

[0125] As shown in FIG. 8, the auxiliary common voltage line VSL-A may be connected to the common voltage line VSL through a first contact hole CT1 penetrating the first to third insulating layers 101, 103, and 105. The auxiliary common voltage line VSL-A may include a metal material such as molybdenum (Mo), copper (Cu), or titanium (Ti). The auxiliary common voltage line VSL-A may include the same material as the common voltage line VSL. For example, the auxiliary common voltage line VSL-A may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer) having a thickness greater than that of the titanium layer. In another embodiment, the auxiliary common voltage line VSL-A may include a material different from that of the common voltage line VSL. For example, the auxiliary common voltage line VSL-A may include a multilayer structure of one or more metal layers including the above-mentioned metal material and a transparent conductive oxide layer such as ITO disposed on the above-mentioned one or more metal layers, whereas the common voltage line VSL may include only a layer including a metal without including a transparent conductive oxide.

[0126] The auxiliary common voltage line VSL-A may be protected by the fourth insulating layer 107. For example, the fourth insulating layer 107 may cover the auxiliary common voltage line VSL-A while being in direct contact with the upper surface of the auxiliary common voltage line VSL-A. In particular, the fourth insulating layer 107 may cover a portion of the auxiliary common voltage line VSL-A immediately below the opening 109OP of the fifth insulating layer 109. The fourth insulating layer 107 may include an inorganic insulator as described above.

[0127] The fifth insulating layer 109 is disposed on the fourth insulating layer 107. The opening 109OP of the fifth insulating layer 109 may provide a degassing passage. For example, gas contained in the fifth insulating layer 109 made of an organic insulator may be released through the opening 109OP of the fifth insulating layer 109 during the manufacturing process of the display device.

[0128] The opening 109OP of the fifth insulating layer 109 may overlap the auxiliary common voltage line VSL-A. In order to prevent damage to the auxiliary common voltage line VSL-A during the process of forming the opening 109OP and / or during a process after forming the opening 109OP, a portion of the auxiliary common voltage line VSL-A located directly below the opening 109OP may be covered (e.g., entirely covered) with the fourth insulating layer 107. In one embodiment, the auxiliary common voltage line VSL-A may include copper, which has a relatively low resistance. For example, the auxiliary common voltage line VSL-A may include a laminated structure of a titanium layer (lower layer) and a copper layer (upper layer), and the copper layer, which is relatively susceptible to damage, may be covered by the fourth insulating layer 107, thereby preventing damage.

[0129] The auxiliary electrode 180 may be disposed on the fifth insulating layer 109. The auxiliary electrode 180 may be connected to the auxiliary common voltage line VSL-A through a second contact hole CT2 penetrating the fifth insulating layer 109 and the fourth insulating layer 107. Since the auxiliary common voltage line VSL-A is connected to the common voltage line VSL through the first contact hole CT1, the auxiliary electrode 180 may be electrically connected to the common voltage line VSL via the auxiliary common voltage line VSL-A.

[0130] The auxiliary electrode 180 may include the same material as the first electrode (FIG. 6) 150 of the light-emitting diode. For example, the auxiliary electrode 180 may include a laminated structure of an ITO layer, an Ag layer, and an ITO layer. A part of the auxiliary electrode 180, for example, the wide portion 180A, may overlap the opening 109OP of the fifth insulating layer 109. The wide portion 180A of the auxiliary electrode 180 may directly contact the upper surface of the fourth insulating layer 107 through the opening 109OP. For example, in a region corresponding to the opening 109OP of the fifth insulating layer 109, the upper surface of the fourth insulating layer 107 may directly contact the auxiliary electrode 180, and the lower surface of the fourth insulating layer 107 may directly contact the auxiliary common voltage line VSL-A.

[0131] The bank layer BNL may be disposed on the auxiliary electrode 180. The bank layer BNL may include a second bank opening B-OP2 overlapping with the wide portion 180A of the auxiliary electrode 180 and a third bank opening B-OP3 overlapping with the narrow portion 180B of the auxiliary electrode 180.

[0132] The second bank opening B-OP2 overlaps with the entire opening 109OP of the fifth insulating layer 109, and the size (or width) ow2 of the second bank opening B-OP2 is larger than the size (or width) ow1 of the opening 109OP of the fifth insulating layer 109. Therefore, in the plan view of Fig. 7, the opening 109OP of the fifth insulating layer 109 exists within the second bank opening B-OP2. In relation to this, Fig. 7 illustrates that the outline 109B of the opening 109OP of the fifth insulating layer 109 is located within the outline BNLB of the second bank opening B-OP2 in the plan view.

[0133] An intermediate layer 160 including a first functional layer 161, an emitting layer 162, and a second functional layer 163 is disposed on the bank layer BNL. A portion of the intermediate layer 160 is located within the second bank opening B-OP2, but includes a hole 160H overlapping a portion of the opening 1O9OP of the fifth insulating layer 109. The hole 160H of the intermediate layer 160 may penetrate the first functional layer 161, the emitting layer 162, and the second functional layer 163. The second electrode 170 of the light-emitting diode may be connected to the auxiliary electrode 180 through the hole 160H of the intermediate layer 160.

[0134] 8 and 9, a portion of the hole 160H in the intermediate layer 160 may overlap the opening 109OP in the fifth insulating layer 109, and the remaining portion of the hole 160H may overlap a material portion of the fifth insulating layer 109. Since the hole 160H in the intermediate layer 160 is formed to partially overlap the opening 109OP in the fifth insulating layer 109, the hole 160H having a desired size (or width) can be formed at a desired position regardless of the size (or width) of the opening 109OP.

[0135] The center HC of the hole 160H of the intermediate layer 160 may be located within the opening 109OP of the fifth insulating layer 109 as shown in FIG. 9. That is, the center HC of the hole 160H of the intermediate layer 160 may be located inside the inner edge 109oe of the fifth insulating layer 109 that defines the opening 109OP and corresponds to the outline 109B (FIG. 7) of the fifth insulating layer 109. That is, the center HC of the hole 160H of the intermediate layer 160 does not extend beyond the inner edge 109oe of the fifth insulating layer 109 and is not located on the material portion of the fifth insulating layer 109. The material portion of the fifth insulating layer 109 indicates the outer material portion surrounding the inner edge 109oe.

[0136] The hole 160H of the intermediate layer 160 may be formed by irradiating a laser beam. In a comparative example of the present invention, if the center HC of the hole 160H of the intermediate layer 160 is out of the opening 109OP and overlaps with a material portion of the fifth insulating layer 109, the fifth insulating layer 109 and / or the auxiliary electrode 180 disposed thereon may be lifted due to the release of gas remaining in the fifth insulating layer 109, and a connection failure between the auxiliary electrode 180 and the second electrode 170 of the light emitting diode may occur. The center HC of the hole 160H may be separated by a first distance d from an inner edge 109oe of the fifth insulating layer 109 corresponding to the outline 109B of the opening 109OP, as shown in FIGS. 7 and 9. The first distance d may be about 1 μm or more.

[0137] The encapsulation layer 400 including the first inorganic encapsulation layer 410, the organic encapsulation layer 420, and the second inorganic encapsulation layer 430 covers a contact area (or a connection area) between the auxiliary electrode 180 and the second electrode 170 of the light emitting diode. The contact area between the auxiliary electrode 180 and the second electrode 170 of the light emitting diode may be overlapped with an intermediate material layer 501 on the encapsulation layer 400, a first light shielding portion 540 of the color conversion-transmission layer 500, a barrier layer 550, a second light shielding portion 640 of the color layer 600, and a light-transmitting base layer 700.

[0138] 10 to 14 are cross-sectional views according to a manufacturing process of a display device according to an embodiment of the present invention. For convenience of explanation, FIGS. 10 to 14 are cross-sectional views according to a manufacturing process of the display device, and show cross-sectional views of the display device taken along line A-A' in FIG. 5 and cross-sectional views of the display device taken along line C-C' in FIG.

[0139] 10, a first electrode 150 and an auxiliary electrode 180 of a light emitting diode are formed on an insulating layer, for example, on a fifth insulating layer 109. The first electrode 150 and the auxiliary electrode 180 may be formed together in the same process and may include the same material.

[0140] Before the first electrode 150 and the auxiliary electrode 180 are formed on the substrate 100, a pixel circuit PC including a driving transistor M1 and a storage capacitor Cst may be formed on the substrate 100. Then, first to fifth insulating layers 101, 103, 105, 107, and 109 are formed on the substrate 100, and specific materials and positions thereof are as described above with reference to FIGS.

[0141] A driving voltage line VDL, a common voltage line VSL, and an auxiliary common voltage line VSL-A may be formed together with the electrodes of the driving transistor M1 and / or the storage capacitor Cst. Although not shown in FIG. 10, before the process of forming the auxiliary common voltage line VSL-A, a first contact hole CT1 (FIG. 8) penetrating the first to third insulating layers 101, 103, and 105 may be formed, and the common voltage line VSL may be connected to the auxiliary common voltage line VSL-A through the first contact hole CT1 (FIG. 8). After the auxiliary common voltage line VSL-A is formed, a fourth insulating layer 107 including an inorganic insulator may be formed.

[0142] The fifth insulating layer 109 is formed on the fourth insulating layer 107. The process of forming the fifth insulating layer 109 may include a process of forming a sixth contact hole CT6 for connecting the pixel circuit PC and the first electrode 150, and a process of forming an opening 1O9OP in the fifth insulating layer 109. The opening 109OP is formed by etching a portion of the fifth insulating layer 109 that overlaps the auxiliary common voltage line VSL-A, and therefore the opening 109OP may overlap the auxiliary common voltage line VSL-A. Together with the opening 1O9OP in the fifth insulating layer 109, the second contact hole CT2 (FIG. 8) described above in FIG. 8 may be formed.

[0143] The bank layer BNL is formed on the first electrode 150 and the auxiliary electrode 180, and may include a first bank opening B-OP1 overlapping the first electrode 150 and a second bank opening B-OP2 overlapping the auxiliary electrode 180. The size (or width) of the second bank opening B-OP2 may be formed to be smaller than the size (or width) of the first bank opening B-OP1.

[0144] 11, an intermediate layer 160 is formed on the bank layer BNL. The intermediate layer 160 may overlap the first electrode 150 exposed through the first bank opening B-OP1 and the auxiliary electrode 180 exposed through the second bank opening B-OP2.

[0145] The intermediate layer 160 includes an emitting layer 162, and therefore, the step of forming the intermediate layer 160 may include a step of forming the emitting layer 162. The step of forming the intermediate layer 160 may further include a step of forming a first functional layer 161 disposed below the emitting layer 162 and / or a second functional layer 163 disposed above the emitting layer 162. In FIG. 11 and FIGS. 12 to 14 described below, the intermediate layer 160 is described as including the first functional layer 161, the emitting layer 162, and the second functional layer 163.

[0146] Next, a laser beam is irradiated onto the intermediate layer 160 to form a hole 160H as shown in FIG. 12. In one embodiment, the laser beam is a UV laser having a wavelength of about 300 to 400 nm, and the output per unit area is about 200 mJ / cm. 2 It could be the following:

[0147] When the laser beam is irradiated, the laser beam is located within the second bank opening B-OP2, and the center of the laser beam may be located within the opening 109OP of the fifth insulating layer 109. That is, the center of the laser beam may be located inside the inner edge 109oe of the fifth insulating layer 109, which corresponds to the outline of the opening 109OP of the fifth insulating layer 109. If the center of the laser beam exceeds the inner edge 109oe and overlaps with a material portion of the fifth insulating layer 109, a lifting phenomenon of the fifth insulating layer 109 and / or the auxiliary electrode 180 occurs due to degassing, so it is appropriate that the center of the laser beam is located within the opening 109OP of the fifth insulating layer 109.

[0148] A laser beam may form a hole 161H in the first functional layer 161, a hole 162H in the light-emitting layer 162, and a hole 163H in the second functional layer 163. The center of the hole 162H in the light-emitting layer 162 may coincide with the center of a hole in a functional layer, for example, the center of the hole 161H in the first functional layer 161 and the center of the hole 162H in the light-emitting layer 162.

[0149] The hole 160H of the intermediate layer 160 is formed by overlapping the hole 161H of the first functional layer 161, the hole 162H of the light emitting layer 162, and the hole 163H of the second functional layer 163, and the center of the hole 161H of the first functional layer 161, the center of the hole 162H of the light emitting layer 162, and the center of the hole 163H of the second functional layer 163 may correspond to the center HC of the hole 160H described above with reference to FIG. 9. The center HC of the hole 160H may be separated from the inner edge 109oe of the fifth insulating layer 109 by a first distance d. For example, the first distance d may be about 1 μm or more.

[0150] 13, a second electrode 170 of the light emitting diode is formed. The second electrode 170 may be in direct contact with and electrically connected to the auxiliary electrode 180 through the hole 160H. A contact area between the second electrode 170 and the auxiliary electrode 180 may be located within the second bank opening B-OP2, and a portion of the contact area may be located on the inclined surface BSS of the fifth insulating layer 109.

[0151] 14, an encapsulation layer 400 is formed on a second electrode 170. The encapsulation layer 400 may include first and second inorganic encapsulation layers 410 and 430 formed by a chemical vapor deposition method, and an organic encapsulation layer 420 formed by applying a monomer and then curing the monomer. A color conversion-transmission layer 500, a color layer 600, and a light-transmitting substrate layer 700 may be formed on the encapsulation layer 400.

[0152] In one embodiment, after forming a lower structure LS from the substrate 100 to the sealing layer 400 and forming an upper structure US including the color converting-transmitting layer 500, the color layer 600, and the light-transmitting base layer 700, the lower structure LS and the upper structure US may be positioned and joined together so that the sealing layer 400 and the color converting-transmitting layer 500 face each other with the intermediate material layer 501 sandwiched therebetween.

[0153] In another embodiment, instead of separately forming the lower structure LS and the upper structure US, an intermediate material layer 501 may be formed on the encapsulation layer 400, and the color conversion-transmission layer 500, the color layer 600, and the light-transmitting base layer 700 may be sequentially formed on the intermediate material layer 501.

[0154] Although the present invention has been described based on one embodiment shown in the drawings, this is merely an example, and a person having ordinary skill in the art will understand that various modifications and variations of the embodiment are possible. Therefore, the true technical scope of the present invention should be determined by the technical spirit of the claims.

Claims

1. A substrate; an organic insulating layer disposed on the substrate and having an opening; a first electrode on the organic insulating layer; an auxiliary electrode disposed on the organic insulating layer and including a first portion overlapping the opening in the organic insulating layer; a bank layer having a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode; an intermediate layer located on the first electrode and the auxiliary electrode, the intermediate layer including a hole exposing a portion of the auxiliary electrode; a second electrode disposed on the intermediate layer to overlap the first electrode and the auxiliary electrode, and in contact with the auxiliary electrode through the hole in the intermediate layer; A display device, wherein, in a plan view, the hole in the intermediate layer only partially overlaps with the opening in the organic insulating layer and is located within the second bank opening.

2. 2. The display device of claim 1, wherein, in a planar view, a portion of the hole in the intermediate layer is located in the opening in the organic insulating layer, and a remaining portion of the hole in the intermediate layer is located between a contour line of the opening in the organic insulating layer and a contour line of the second bank opening.

3. the organic insulating layer includes an inclined surface adjacent the opening; The display device according to claim 1 , wherein a part of a contact area between the second electrode and the auxiliary electrode is located on the inclined surface of the organic insulating layer.

4. The display device according to claim 1 , wherein a center of the hole in the intermediate layer is located within the opening in the organic insulating layer in a plan view.

5. 5. The display device of claim 4, wherein the center of the hole in the intermediate layer is spaced apart from an inner edge of the organic insulating layer that defines the opening in the organic insulating layer by about 1 [mu]m or more.

6. a common voltage line disposed on the substrate and extending in one direction; an auxiliary common voltage line overlapping the common voltage line and electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line and the auxiliary common voltage line; The display device according to claim 1 , wherein the auxiliary common voltage line and the common voltage line overlap the opening in the organic insulating layer.

7. The display device of claim 6 , further comprising an inorganic insulating layer in direct contact with an upper surface of the auxiliary common voltage line.

8. The first portion of the auxiliary electrode a first insulating layer that overlaps the opening of the organic insulating layer and has a width greater than the opening of the organic insulating layer; The auxiliary electrode is a second portion integrally formed with the first portion and having a width narrower than the first portion; The display device of claim 7 , wherein the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line through a contact hole penetrating the organic insulating layer and the inorganic insulating layer.

9. The display device according to claim 1 , wherein the intermediate layer includes a light-emitting layer, and the holes in the intermediate layer include holes penetrating the light-emitting layer.

10. forming an organic insulating layer having an opening on a substrate; forming a first electrode on the organic insulating layer; forming an auxiliary electrode on the organic insulating layer, the first portion of the auxiliary electrode overlapping the opening in the organic insulating layer; forming a bank layer having a first bank opening overlapping the first electrode and a second bank opening overlapping the first portion of the auxiliary electrode; forming an intermediate layer overlying the first electrode and the auxiliary electrode; forming a hole in the intermediate layer to expose a portion of the auxiliary electrode; forming a second electrode on the intermediate layer so as to contact the auxiliary electrode through the hole in the intermediate layer; A method for manufacturing a display device, wherein, in a plan view, the hole in the intermediate layer is located within the second bank opening and only partially overlaps with the opening in the organic insulating layer.

11. The step of forming the hole includes a step of irradiating a laser beam onto the intermediate layer, The method for manufacturing a display device according to claim 10 , wherein a portion of the laser beam is located between a contour line of the opening in the organic insulating layer and a contour line of the second bank opening in a plan view.

12. The method for manufacturing a display device according to claim 11 , wherein the center of the laser beam is positioned within the second bank opening.

13. 11. The method of claim 10, wherein the center of the hole in the intermediate layer is spaced apart from an inner edge of the organic insulating layer that defines the opening in the organic insulating layer by about 1 [mu]m or more.

14. the organic insulating layer includes an inclined surface adjacent the opening; The method for manufacturing a display device according to claim 10 , wherein in the step of forming the second electrode, a part of a contact area between the second electrode and the auxiliary electrode is located on the inclined surface of the organic insulating layer.

15. The first portion of the auxiliary electrode a first insulating layer that overlaps the opening of the organic insulating layer and has a width greater than the opening of the organic insulating layer; The auxiliary electrode is The method of claim 10 , further comprising: a second portion that is integral with the first portion and has a width narrower than that of the first portion.

16. forming a common voltage line disposed on the substrate and extending in one direction; forming an auxiliary common voltage line overlapping the common voltage line and electrically connected to the common voltage line through a contact hole defined in at least one insulating layer interposed between the common voltage line and the auxiliary common voltage line, The method of claim 15 , wherein the auxiliary common voltage line and the common voltage line overlap the opening in the organic insulating layer.

17. The method of claim 16, further comprising forming an inorganic insulating layer on the auxiliary common voltage line.

18. 20. The method of claim 17, further comprising forming a contact hole penetrating the organic insulating layer and the inorganic insulating layer such that the second portion of the auxiliary electrode is electrically connected to the auxiliary common voltage line.

19. The method for manufacturing a display device according to claim 10 , wherein a part of an outline of the opening in the organic insulating layer overlaps with the hole in the intermediate layer in a plan view.

20. the step of forming the intermediate layer includes a step of forming a light emitting layer so as to overlap the first electrode and the auxiliary electrode; The method for manufacturing a display device according to claim 10 , wherein the step of forming the holes includes the step of forming holes penetrating the light-emitting layer.

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