Display device and electronic apparatus

Abstract

To provide a display device with non-contact input function.SOLUTION: The display device comprises a first light-emitting device performing display, a second light-emitting device emitting detection light, and a light receiving device. The light receiving device has a function of detecting light emitted by the second light-emitting device and reflected on a target object. Near infrared without visual sensitivity is used for light emitted by the second light-emitting device. Therefore, even when high luminance light is emitted from a display section, visibility of displaying is not affected. In addition, emission of the light at high luminance allows a target object located far away from the display device to be detected with high sensitivity.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods and manufacturing methods can be cited as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one embodiment of a semiconductor device. A display device, an imaging device, or an electronic device may include a semiconductor device. [Background technology]

[0004] In recent years, display devices have been used for various purposes. For example, large display devices are used for , home television equipment, digital signage, PID (Public Information In addition, applications for small and medium-sized display devices include Examples of such devices include mobile information terminals such as smartphones and tablet computers.

[0005] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon are thin, lightweight, and have high speed response. For example, Patent Document 1 describes a flexible polymer film. An optical device is disclosed. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-197522 A Summary of the Invention [Problem to be solved by the invention]

[0007] As described above, display devices are used in a variety of devices, and therefore, high performance is desired. By providing functions such as a user interface and an image capture function, it has become a more convenient electronic device. It is possible to realize the device.

[0008] Therefore, one object of one embodiment of the present invention is to provide a display device having an input function. Another object is to provide a display device having a light detection function. One of the objects of the present invention is to provide a multi-function display device. Another object of the present invention is to provide a novel semiconductor device. It shall be one.

[0009] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0010] One embodiment of the present invention is a display device that has a light-emitting device and a light-receiving device in a display portion.

[0011] One embodiment of the present invention is a display device having a first pixel, a second pixel, and a third pixel. Thus, the first pixel has a first light-emitting device and the second pixel has a second light-emitting device. the third pixel has a light receiving device, and the first light emitting device has a function of emitting visible light. The second light emitting device has a function of emitting near-infrared light, and the light receiving device has a function of receiving near-infrared light. The second pixel has a function of detecting light, and the second pixel detects a third potential based on the first potential and the second potential. generating a potential and causing the second light emitting device to emit light in response to the third potential; It is a display device having the above structure.

[0012] The first light-emitting device has the function of emitting any one of red, green, blue, or white light. It is possible.

[0013] The light-receiving device preferably has a photoelectric conversion layer, and the photoelectric conversion layer preferably contains an organic compound.

[0014] The first light emitting device, the second light emitting device and the light receiving device have a diode configuration. The cathode of the first light-emitting device, the cathode of the second light-emitting device, and the light-receiving device The anode of the first light-emitting device can be electrically connected to the cathode of the second light-emitting device. The cathode of the second light emitting device and the cathode of the light receiving device can be electrically connected. can.

[0015] It is preferable that a visible light cut filter is provided at a position overlapping with the light receiving device.

[0016] The first to third pixels each have a transistor, and the transistor has a metal oxide film in a channel forming region. The metal oxides are In, Zn, and M (M is Al, Ti, Ga, Ge, Sn, Y). , Zr, La, Ce, Nd or Hf). Effect of the Invention

[0017] According to one embodiment of the present invention, a display device having an input function can be provided. It is possible to provide a display device having a detection function. Alternatively, it is possible to provide a multi-function display device. Alternatively, a novel display device can be provided. Alternatively, a novel semiconductor A body device, etc. can be provided.

[0018] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0019] [Figure 1] FIG. 1 is a diagram illustrating a display device. [Diagram 2] 2A to 2D and 2E1 to 2E3 are diagrams for explaining the configuration of a pixel, 2F and 2G are diagrams for explaining the arrangement of a pixel, and 2H and 2I are diagrams for explaining the configuration of a sub-pixel. [Diagram 3] Fig. 3A is a diagram illustrating a display device, and Fig. 3B and Fig. 3C are diagrams illustrating an arrangement of pixels. [Figure 4] FIG. 4 is a cross-sectional view illustrating the display device. [Diagram 5] 5A to 5C are cross-sectional views illustrating a display device. [Figure 6] 6A and 6B are cross-sectional views illustrating a display device. [Figure 7] 7A and 7B are cross-sectional views illustrating a display device. [Figure 8] 8A and 8B are cross-sectional views illustrating a display device. [Figure 9] FIG. 9 is a perspective view illustrating the display device. [Figure 10] FIG. 10 is a cross-sectional view illustrating the display device. [Figure 11] 11A and 11B are cross-sectional views illustrating a display device. [Figure 12] 12A and 12B are cross-sectional views illustrating a display device. [Figure 13] FIG. 13 is a cross-sectional view illustrating the display device. [Figure 14] 14A to 14D are diagrams illustrating a pixel circuit. [Figure 15] FIG. 15 is a diagram illustrating a pixel circuit. [Figure 16] FIG. 16 is a diagram illustrating a pixel circuit. [Figure 17] 17A and 17B are diagrams illustrating an electronic device. [Figure 18] 18A to 18D are diagrams illustrating an electronic device. [Figure 19] 19A to 19F are diagrams illustrating an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various modifications and variations in form and detail may be made without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. The present invention should not be construed as being limited to the description of the embodiments. In the configuration, the same parts or parts having similar functions are designated by the same reference numerals in different drawings. The same elements constituting the figures are used throughout the figure, and their repeated explanations may be omitted. Hatching may be omitted or changed as appropriate between different drawings.

[0021] In addition, even if a circuit diagram shows a single element, it may not have any functional problems. If there is no need for a single element, the element may be composed of multiple elements. For example, In some cases, multiple resistors may be connected in series or parallel. In some cases, the signal processing unit 10 may be divided and placed in multiple positions.

[0022] In addition, one conductor may have multiple functions such as wiring, electrodes, and terminals. In this specification, the same element may be referred to by multiple names. Even if the circuit diagram shows direct connections between elements, in reality The elements may be connected via one or more conductors, and such connections are referred to herein as Such a configuration is also included in the category of direct connection.

[0023] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0024] One embodiment of the present invention is a display device that allows input operations to be performed without contact. The first light emitting device has a surface, a second light emitting device, and a light receiving device. The first light-emitting device has a function of displaying an image, and the second light-emitting device has a function of emitting light to illuminate an object. The light receiving device detects light emitted by the second light emitting device and reflected by the object. Possesses the ability.

[0025] The light emitted by the second light-emitting device is near-infrared light, which has virtually no visual sensitivity. Therefore, even if the light is emitted from the display unit at high brightness, it does not affect the visibility of the display. By emitting light at a high brightness, it is possible to detect objects located far away from the display device with good sensitivity. This function allows the realization of a near-touch sensor. It is a sensor that realizes the same function as a touch sensor without contact.

[0026] In addition, in the pixel having the second light-emitting device, the second light-emitting device is caused to emit light with high luminance. A boost circuit is provided for this purpose.

[0027] FIG. 1 is a diagram illustrating a display device according to one embodiment of the present invention. The display device includes a pixel array 14 and , circuit 15, circuit 16, circuit 17, circuit 18, and circuit 19. The pixel array 4 has pixels 10 arranged in a column direction and a row direction.

[0028] The pixel 10 can have subpixels 11, 12, and 13. For example, the subpixel 11 is The sub-pixel 12 has a function of emitting light for illuminating an object. The sub-pixel 13 has a function of detecting light that is emitted from the sub-pixel 12 and reflected by an object.

[0029] In this specification, the smallest unit in which an independent operation can be performed within one "pixel" is referred to as a "pixel" for convenience. In the following explanation, we will define "sub-pixels" as "pixels" and replace "regions" with "sub-pixels". It may be replaced with "element".

[0030] Subpixel 11 has a first light-emitting device that emits visible light, and subpixel 12 has a first light-emitting device that emits near-infrared light. A second light emitting device is provided to emit external light.

[0031] The light-emitting device is OLED (Organic Light Emitting Diode). iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL element such as a luminescent material. Materials that emit fluorescence (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence Thermally activated delayed fluorescence fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.) In addition, light-emitting devices such as micro LEDs (Light Emitting Diodes) Alternatively, an LED such as a LED light emitting diode (LED) can be used.

[0032] The subpixel 13 has a light receiving device that is sensitive to near infrared light. A photoelectric conversion element that detects the incoming light and generates an electric charge can be used. The amount of charge generated is determined based on the amount of incident light. An n-type or pin-type photodiode can be used.

[0033] The light receiving device is an organic photodiode with an organic compound in the photoelectric conversion layer. It is preferable that the organic photodiode is thin, lightweight, and large in area. In addition, since there is a high degree of freedom in shape and design, it can be applied to various display devices. , crystalline silicon (single crystal silicon, polycrystalline silicon, microcrystalline silicon, etc.) A photodiode can also be used as the light receiving device.

[0034] In one embodiment of the present invention, an organic electroluminescence (EL) element is used as the light-emitting device, and an organic Photodiodes are used. Organic photodiodes can be configured in the same way as organic EL elements. Therefore, it is possible to incorporate a light-receiving device into a display device without significantly increasing the number of manufacturing steps. For example, a photoelectric conversion layer for a light receiving device and a light emitting layer for a light emitting device can be fabricated. The other layers may be the same in the light emitting device and the light receiving device.

[0035] The circuit 15 and the circuit 16 are driver circuits for driving the sub-pixels 11 and 12. The circuit 15 can function as a source driver, and the circuit 16 can function as a gate driver. The circuits 15 and 16 may be, for example, shift register circuits. .

[0036] The driving circuits for the sub-pixels 11 and 12 may be separated. The function of the sub-pixel 12 is to irradiate light to an object. Since the primary purpose is to illuminate the sub-pixels 12, all the sub-pixels 12 in the pixel array 14 emit light of the same brightness. Therefore, the circuits equivalent to the source driver and the gate driver can be highly functional. Instead of using the sequential circuit or the like, a simplified circuit may be used.

[0037] The circuit 17 and the circuit 18 are driver circuits for driving the subpixel 13. The circuit 1 can function as a column driver, and the circuit 18 can function as a row driver. 7 and the circuit 18 may be, for example, a shift register circuit or a decoder circuit. This can be done.

[0038] The circuit 19 is a circuit for reading out data output by the subpixel 13. The circuit 19 includes, for example, The A / D converter circuit converts the analog data output from the sub-pixels 13 into digital data. Also, the circuit 19 has a function of performing correlated double sampling processing on the output data. The signal may include a CDS circuit that performs the steps of:

[0039] The subpixel 12 and the subpixel 13 can function as an input interface. Near-infrared light is emitted from the sub-pixel 12, and reflected light from an object close to the display device is reflected by the sub-pixel 1 Therefore, the threshold of the amount of received near-infrared light detected by the sub-pixel 13 is By setting a high value, it can function as a switch. It is possible to realize the same functions as a sensor without contact. It is also possible to control the operation of a pointer by touch. Or it can be done contactless.

[0040] Also, the light receiving device can be used to obtain image data such as fingerprints, palm prints, or irises. In other words, a biometric authentication function can be added to the display device. The imaging data may be acquired by contacting the display device.

[0041] In addition, a light-receiving device is used to capture images of the user's facial expressions, eye movements, or changes in pupil diameter. By analyzing the image data, the user's physical and mental health can be The information can be acquired. Based on the information, the display device outputs one of the display and audio. It can change the direction of movement or both, and perform actions that match the user's physical and mental state. These operations are implemented, for example, in VR (Virtual Reality) devices and AR (Augmented Reality) equipment or MR (Mixed Reality) equipment This is effective for devices for the ity.

[0042] 2A to 2D and 2E1 to 2E3 show layouts of sub-pixels in pixel 10. 2A and 2B are diagrams for explaining an example. As shown in FIG. 2A and FIG. 2B, each sub-pixel is arranged in the horizontal direction (where the gate line extends). Alternatively, the configuration shown in FIG. 1, FIG. 2C, and FIG. 2D may be used. As shown in FIG. 1, the transistors may be arranged in the horizontal and vertical directions (the direction in which the source lines extend). stomach.

[0043] Alternatively, as shown in FIG. 2E1 and FIG. 2E2, one pixel 10 may have a subpixel 13 or a subpixel 14. In this case, for example, as shown in FIG. 2F, The pixel 10 shown in FIG. 2E3 and the pixel 10 shown in FIG. 2E2 can be arranged alternately. In this case, the pixel 10 may be configured with only the sub-pixel 11 as shown in FIG. 2E3 between the pixel 10 shown in FIG. 2E1 and the pixel 10 shown in FIG. 2E2. In the arrangement shown in FIG. 2F or FIG. 2G, the subpixels 12 and Since the total number of the sub-pixels 11 can be made larger than the total number of the sub-pixels 13, the display quality can be improved. can.

[0044] On the other hand, when the pixel 10 shown in FIG. 2E1 to FIG. 2E3 is used, the light source for illuminating the object and The sensitivity to detect objects is reduced because the number of light receiving devices is reduced. The configuration and arrangement of the elements may be determined according to the purpose. In the arrangement, the number of pixels 10 in FIG. 2E1 and the number of pixels 10 in FIG. 2E2 do not have to be the same. .

[0045] The subpixel 11 can be configured to emit a single color light, or can be configured to emit different colors as shown in FIGS. 2H and 2I. FIG. 2H shows a subpixel 11 as a red light-emitting device. A subpixel 11R having a light emitting device that emits green light, a subpixel 11G having a light emitting device that emits blue light, and FIG. 1 is a diagram showing an example of a configuration in which a sub-pixel 11B has a light-emitting device that emits a color. By using these sub-pixels 11, color display can be achieved.

[0046] Furthermore, as shown in FIG. 2I, a subpixel 11W having a light-emitting device that emits white light is provided. Since the subpixel 11W can emit white light by itself, it can be used as a white or When displaying a color close to that color, the luminance of the sub-pixels of other colors can be suppressed. This allows for power-saving display.

[0047] As shown in FIG. 3A, the subpixel 11 and the subpixel 13 are represented as the basic components of the pixel 10. In this case, the light source 20 for illuminating the object may be connected to the pixel array 14 (display The light source 20 is an LED that emits near-infrared light with high brightness. The light source 20 is provided outside the pixel array 14 and is therefore separate from the display device. As shown in the arrangement examples in FIG. 3B and FIG. 3C, the subpixel 1 can be turned on by the control of Since the number of sub-pixels 13 can be increased, the sensitivity of object detection is improved. It is possible to do so.

[0048] The arrangement and number of the light sources 20 shown in FIG. 3A are merely examples, and the present invention is not limited to these. The source 20 may be an element of a device having a display device according to an embodiment of the present invention; or The display device may be a device other than the device having the display device of one embodiment of the present invention.

[0049] The configuration of the pixels and sub-pixels is not limited to the above, and various arrangements can be adopted. do.

[0050] Next, a more specific example of the display device of one embodiment of the present invention will be described.

[0051] 4 shows a schematic cross-sectional view of a display device 50A according to an embodiment of the present invention. The device 110 includes a light-emitting device 190 and a light-receiving device 180. 110 corresponds to the organic photodiode of the subpixel 13. The light-emitting device 190 is The light-emitting device 180 corresponds to an organic EL element (which emits near-infrared light) included in the subpixel 12. corresponds to the organic EL element (which emits visible light) that the sub-pixel 11 has.

[0052] The organic EL elements of the subpixels 11 and 12 and the surrounding structure are The configuration other than the optical layer can be the same. Therefore, here, the configuration of the light-emitting device 190 For the sake of detailed description, the description of the light-emitting device 180 will be omitted.

[0053] The light receiving device 110 includes a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, and a common layer 11 The light-emitting device 190 includes a pixel electrode 191, a common layer 114, and a common electrode 115. 12, a light-emitting layer 193, a common layer 114 and a common electrode 115. 180 has a light-emitting layer 183 that is different from light-emitting layer 193 .

[0054] A pixel electrode 111, a pixel electrode 191, a common layer 112, a photoelectric conversion layer 113, a light emitting layer 193, a common The conductive layer 114 and the common electrode 115 may each have a single-layer structure or a multilayer structure. It is also possible.

[0055] The pixel electrode 111 and the pixel electrode 191 are located on the insulating layer 214. and the pixel electrode 191 can be formed using the same material in the same process.

[0056] The common layer 112 is located on the pixel electrode 111 and the pixel electrode 191. , which are layers commonly used in the light receiving device 110 and the light emitting device 190.

[0057] The photoelectric conversion layer 113 has an area overlapping with the pixel electrode 111 via the common layer 112. The layer 193 has an area overlapping with the pixel electrode 191 via the common layer 112. The light-emitting layer 193 has a second organic compound different from the first organic compound. The organic compound has

[0058] The common layer 114 is disposed on the common layer 112, the photoelectric conversion layer 113, and the light-emitting layer 193. The common layer 114 is a layer that is used in common by the light receiving device 110 and the light emitting device 190. It is.

[0059] The common electrode 115 is connected to the pixel via the common layer 112, the photoelectric conversion layer 113, and the common layer 114. The common electrode 115 has an area overlapping with the electrode 111. The common electrode 115 is connected to the common layer 112 and the light-emitting layer 19. 3 and the pixel electrode 191 through the common layer 114. The common electrode 115 is , which are layers commonly used in the light receiving device 110 and the light emitting device 190.

[0060] In the display device of the present embodiment, an organic compound is used for the photoelectric conversion layer 113 of the light receiving device 110. The light receiving device 110 is configured such that the layers other than the photoelectric conversion layer 113 are the light emitting device 190 (organic E Therefore, the light-emitting device 190 can be fabricated in a common structure with the light-emitting element 190. By simply adding a step of forming the photoelectric conversion layer 113, the light-emitting device 190 can be formed in parallel. The light receiving device 110 can be formed by combining the light emitting device 190 and the light receiving device. Therefore, the number of manufacturing steps can be significantly reduced. Therefore, the light receiving device 110 can be built into the display device without any need for a separate light receiving circuit.

[0061] In the display device 50A, the photoelectric conversion layer 113 of the light receiving device 110 and the light emitting device 190 The light receiving device 110 and the light emitting device 190 have the same structure except for the light emitting layer 193. However, the light receiving device 110 and the light emitting device 190 may have the following configuration. The light receiving device 110 and the light emitting device 190 are not limited to the above. In addition to the light-emitting layer 193, layers that are separately manufactured may be provided (see the display device 50 described later). (See 50C, 50D, and 50E). The light receiving device 110 and the light emitting device 190 are commonly used. It is preferable that the semiconductor device has at least one layer (common layer) that is connected to the semiconductor device. This significantly reduces the number of manufacturing steps. Therefore, the light receiving device 110 can be built into the display device without any need for a separate light receiving circuit.

[0062] The display device 50A includes a light receiving device 11 between a pair of substrates (substrate 151 and substrate 152). 0, light emitting device 190, transistor 41, and transistor 42.

[0063] In the light receiving device 110, the pixel electrodes 111 and the common electrode 115 are located between the pixel electrodes 111 and The common layer 112, the photoelectric conversion layer 113, and the common layer 114 are organic layers (containing organic compounds). The pixel electrode 111 preferably has a function of reflecting near-infrared light. The common electrode 115 has a function of transmitting visible light and near infrared light.

[0064] The light receiving device 110 has a function of detecting light. , which is a photoelectric conversion element that converts incident light 22 into an electrical signal.

[0065] A light-shielding layer 148 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 148 is The light receiving device 110 and the light emitting device 190 have openings at positions overlapping each other. By providing the light blocking layer 148, the range in which the light receiving device 110 detects light can be controlled. This can be done.

[0066] The light-shielding layer 148 may be made of a material that blocks the light emitted by the light-emitting device 190. The light-shielding layer 148 preferably absorbs visible light and near-infrared light. For example, metal materials or resins containing pigments (such as carbon black) or dyes. The light-shielding layer 148 can be formed using a red color filter, a green color filter, and the like. It may have a laminated structure of a color filter and a blue color filter.

[0067] In addition, an opening provided at a position of the light-shielding layer 148 overlapping the light-receiving device 110 is provided with a light-emitting device. Filter 1 that cuts light with wavelengths shorter than the wavelength of the light emitted by the Vise 190 (near infrared light) As the filter 149, for example, a filter having a wavelength shorter than the near infrared light is preferably provided. A long-pass filter that cuts light on the wavelength side, at least in the visible light region. A bandpass filter or the like can be used. Filters that cut visible light include In addition to resin films containing dyes, semiconductor films such as amorphous silicon thin films can be used. By providing the filter 149, it is possible to suppress the incidence of visible light into the light receiving device 110. This allows near-infrared light to be detected with low noise.

[0068] As shown in FIG. 5A, the filter 149 is laminated with the light receiving device 110. It may be possible.

[0069] Alternatively, the filter 149 may be lenticular in shape, as shown in FIG. The filter 149 is a convex lens having a convex surface on the substrate 151 side. The side may be arranged to be convex.

[0070] In the case where both the light-shielding layer 148 and the lens-type filter 149 are formed on the same surface of the substrate 152, In this case, the order of formation does not matter. FIG. 5B shows an example in which the lens-type filter 149 is formed first. However, the light-shielding layer 148 may be formed first. In FIG. 5B, the edge of the lens-type filter 149 is is covered by a light blocking layer 148.

[0071] In the configuration shown in FIG. 5B, the light 22 is guided to the light receiving device 110 via a lens-type filter 149. The filter 149 is a lens type, so that the light receiving device 110 The imaging range of the light receiving device 110 can be narrowed, and the imaging range of the light receiving device 110 does not overlap with that of the adjacent light receiving device 110. This allows for a clear image with less blurring. By making the light shielding layer 149 into a lens shape, the opening of the light shielding layer 148 above the light receiving device 110 is enlarged. Therefore, the amount of light incident on the light receiving device 110 can be increased. This makes it possible to increase the light detection sensitivity.

[0072] The lens-type filter 149 is formed directly on the substrate 152 or on the light receiving device 110. Alternatively, a microlens array or the like that is separately manufactured can be attached to the substrate 152. It may be combined.

[0073] 5C, the filter 149 may not be provided. In the characteristics of 110, there is no sensitivity to visible light, or the sensitivity to near-infrared light is insufficient compared to visible light. If the optical filter 149 is sufficiently high, it is possible to omit the filter 149. In this case, the lens type filter shown in FIG. A lens having a shape similar to that of the filter 149 may be provided overlapping the light receiving device 110. The lens may be formed from a material that is transparent to visible light.

[0074] Here, the light receiving device 110 receives the light 21 emitted by the light emitting device 190 as shown in FIG. Among them, light 22 reflected by an object 60 such as a finger can be detected. A part of the light emitted by the light emitting device 190 is reflected in the display device 50A and reflected by the object 60. In some cases, the light may enter the light receiving device 110 without being reflected.

[0075] The light-shielding layer 148 can suppress the influence of such stray light. For example, the light-shielding layer 148 If the light emitting device 190 is not provided with the reflecting layer 152, the light 23a emitted from the light emitting device 190 is reflected by the substrate 152, etc. The reflected light 23b may enter the light receiving device 110. This can prevent the reflected light 23b from entering the light receiving device 110. This reduces noise and improves the light detection accuracy of the light receiving device 110.

[0076] In the light-emitting device 190, a common electrode 115 is disposed between the pixel electrode 191 and the common electrode 115. The layer 112, the light-emitting layer 193 and the common layer 114 can be referred to as an EL layer. It is preferable that 91 has a function of reflecting at least near-infrared light.

[0077] The light emitting device 190 has a function of emitting near-infrared light. 0 is applied to the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115. It is an electroluminescent device that emits light 21 .

[0078] The pixel electrode 111 is connected to the transistor 41 through an opening in the insulating layer 214. The end of the pixel electrode 111 is electrically connected to the source or drain. It is covered with

[0079] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The end of the pixel electrode 191 is electrically connected to the source or drain. The transistor 42 has a function of controlling the driving of the light emitting device 190. do.

[0080] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 4). There are.

[0081] At least a part of the circuit electrically connected to the light receiving device 110 is a light emitting device 190. It is preferable that the insulating film 10 is formed of the same material and in the same process as the circuitry to which it is electrically connected. This makes it possible to reduce the thickness of the display device compared to when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0082] The light receiving device 110 and the light emitting device 190 are preferably covered with a protective layer 195. FIG. 4 shows an example in which the protective layer 195 is provided on and in contact with the common electrode 115. By providing the protective layer 195, the light receiving device 110 and the light emitting device 190 are protected from water. The intrusion of impurities such as the above is suppressed, and the light receiving device 110 and the light emitting device 190 In addition, the adhesive layer 142 can improve the reliability of the protective layer 195 and the substrate 15. 2 are pasted together.

[0083] As shown in FIG. 6A, a protective layer is formed on the light receiving device 110 and the light emitting device 190. In this case, the common electrode 11 is fixed by the adhesive layer 142. 5 and the substrate 152 are bonded together.

[0084] As shown in FIG. 6B, the light-shielding layer 148 may not be provided. Increasing the amount of light emitted by the optical device 190 and the amount of light received by the light receiving device 110 Therefore, the detection sensitivity can be improved.

[0085] The display device according to one embodiment of the present invention may have the configuration of a display device 50B shown in FIG. 7A. The display device 50B does not have the substrate 151, the substrate 152, and the partition wall 216, but has the substrate 153, The display device 50 includes the substrate 154, the adhesive layer 155, the insulating layer 212, and the partition wall 217. Different from A.

[0086] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are attached to each other by adhesive layer 142.

[0087] The display device 50B includes an insulating layer 212, a transistor 41, and a transistor The photodiode 42, the light receiving device 110, the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are preferably flexible. This makes it possible to provide flexibility to the display device 50B. For example, the substrate 15 It is preferable that the material for the plate 3 and the substrate 154 be resin.

[0088] The substrate 153 and the substrate 154 are made of polyethylene terephthalate (PET), polyethylene Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) Resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.) , polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin Grease, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene Resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber One or both of the substrates 153 and 154 may be made of a flexible material. Alternatively, glass having a thickness sufficient to provide the desired properties may be used.

[0089] For the substrate of the display device of this embodiment mode, a film having high optical isotropy may be used. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. (also called acetate) film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0090] The partition 217 is preferably capable of absorbing light emitted by the light emitting device 190. For example, the light-emitting element 100 can be formed by using a resin material containing a pigment or a dye.

[0091] A part of the light 23c emitted by the light emitting device 190 is reflected by the substrate 152 and the partition wall 217. The reflected light 23d may enter the light receiving device 110. The reflected light passes through the partition 217 and is reflected by a transistor or wiring, etc., and is received by the light receiving device. The light 23c may be absorbed by the partition wall 217, and the reflected light 23c may enter the chair 110. This can prevent the incident light 23d from entering the light receiving device 110. This reduces noise. This can reduce the light receiving power and improve the light detection accuracy of the light receiving device 110.

[0092] The partition 217 absorbs light at least at a wavelength that the light receiving device 110 can detect. For example, it is preferable to receive near-infrared light emitted by the light-emitting device 190 from the light-receiving device 11. When 0 is detected, the partition 217 can absorb at least near-infrared light and also absorb visible light. It is preferable to be able to do so.

[0093] In the above, an example in which the light-emitting device and the light-receiving device have two common layers has been shown. However, the present invention is not limited to this. In the following, an example in which the common layer has a different configuration will be described.

[0094] 7B shows a schematic cross-sectional view of display device 50C. Display device 50C does not have common layer 114. The display device 50A differs from the display device 50A in that it has a buffer layer 184 and a buffer layer 194. The first layer 184 and the buffer layer 194 may have a single-layer structure or a laminate structure. good.

[0095] In the display device 50C, the light receiving device 110 includes a pixel electrode 111, a common layer 112, a photoelectric conversion layer 113, and a photoelectric conversion layer 114. The display device 50C includes a conversion layer 113, a buffer layer 184, and a common electrode 115. In the figure, the light-emitting device 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a backplane layer 194, and a backplane layer 195. The semiconductor device has a photoresist layer 194 and a common electrode 115 .

[0096] In the display device 50C, a buffer layer 184 between the common electrode 115 and the photoelectric conversion layer 113, This shows an example in which a buffer layer 194 between a common electrode 115 and a light-emitting layer 193 is separately formed. The buffer layer 184 and the buffer layer 194 are, for example, the electron injection layer and the electron transport layer. It can be either one or both.

[0097] FIG. 8A shows a schematic cross-sectional view of a display device 50D. The display device 50D does not include a common layer 112. First, it differs from display device 50A in that it has buffer layer 182 and buffer layer 192. The buffer layer 182 and the buffer layer 192 may have a single-layer structure or a laminate structure. This is also fine.

[0098] In the display device 50D, the light receiving device 110 includes a pixel electrode 111, a buffer layer 182, The display device 50D includes a photoelectric conversion layer 113, a common layer 114, and a common electrode 115. In the light-emitting device 190, a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, It has a common layer 114 and a common electrode 115 .

[0099] In the display device 50D, a buffer layer 182 between the pixel electrode 111 and the photoelectric conversion layer 113, This shows an example in which a buffer layer 192 between a pixel electrode 191 and a light-emitting layer 193 is separately formed. The buffer layer 182 and the buffer layer 192 are, for example, a hole injection layer and a hole transport layer. It can be either one or both.

[0100] 8B shows a schematic cross-sectional view of a display device 50E. The display device 50E includes a common layer 112 and The common layer 114 is not included, and the buffer layer 182, the buffer layer 184, the buffer layer 192, and The display device 50 differs from the display device 50A in that the display device 50A includes a buffer layer 194.

[0101] In the display device 50E, the light receiving device 110 includes a pixel electrode 111, a buffer layer 182, The display device 5 includes a photoelectric conversion layer 113, a buffer layer 184, and a common electrode 115. In FIG. 1E, a light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, and a light-emitting layer 193. 3, a buffer layer 194 and a common electrode 115.

[0102] In the process of manufacturing the light receiving device 110 and the light emitting device 190, the photoelectric conversion layer 113 and the light emitting In addition to creating different layers 193, other layers can also be created.

[0103] In the display device 50E, the light receiving device 110 and the light emitting device 190 form a pair of electrodes (pixels). An example in which there is no common layer between the electrode 111 or pixel electrode 191 and the common electrode 115 is shown. The light receiving device 110 and the light emitting device 190 of the display device 50E are fabricated as follows. In this step, first, the pixel electrodes 111 and 191 are formed on the insulating layer 214 using the same material. Then, the buffer layer 182 and the photoelectric conversion layer 11 are formed on the pixel electrode 111 in the same process. 3 and a buffer layer 184 are formed on the pixel electrode 191, and a buffer layer 192 and a light-emitting layer 19 3 and a buffer layer 194 are formed to cover the buffer layer 184 and the buffer layer 194. The common electrode 115 is formed so as to

[0104] In addition, the laminated structure of the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184, The order of forming the laminated structure of the photoresist layer 192, the light-emitting layer 193, and the buffer layer 194 is not particularly limited. For example, the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184 are formed. After that, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194 may be fabricated. Before forming the buffer layer 182, the photoelectric conversion layer 113, and the buffer layer 184, A photoresist layer 192, a light-emitting layer 193 and a buffer layer 194 may be fabricated. The layer 182, the buffer layer 192, the photoelectric conversion layer 113, the light emitting layer 193, etc. are alternately formed in this order. You may do so.

[0105] A more specific example of a structure of the display device of one embodiment of the present invention will be described below.

[0106] 9 shows a perspective view of the display device 100A. The display device 100A includes a substrate 151 and a substrate 15 9, the substrate 152 is indicated by a dashed line.

[0107] The display device 100A includes a display unit 162, a circuit 164a, a circuit 164b, a wiring 165a, and a wiring 9, the display device 100A includes an IC (integrated circuit) 173a, An example in which FPC172a, IC173b and FPC172b are mounted is shown. Therefore, the configuration shown in FIG. 9 is a display model having a display device 100A, an IC, and an FPC. It can also be called Joule.

[0108] The circuit 164a can be a gate driver for display. A row driver for imaging (photodetection) can be used as 64b.

[0109] The wiring 165a has a function of supplying signals and power to the subpixels 11 and 12 and the circuit 164a. The signal and power are input from the outside via the FPC 172a, or is input from IC 173a to wiring 165a.

[0110] The wiring 165b has a function of supplying signals and power to the subpixel 13 and the circuit 164b. The signal and power are input from the outside via FPC 172b, or is input from IC 173b to wiring 165b.

[0111] In FIG. 9, IC 173a, 1 73b is provided, but TCP (Tape Carrier Pack Alternatively, a chip-on-film (COF) method or a photo-insulating film (PIF) method may be used. C173a includes, for example, an I In addition, the IC 173b may include, for example, a color Use ICs that have the functions of signal processing circuits such as a driver and an A / D converter. can be done.

[0112] The driver circuit is mounted on the substrate 151 in the same manner as the transistors constituting the pixel circuit. It may also be provided in.

[0113] FIG. 10 shows a part of the area including the FPC 172a in the display device 100A shown in FIG. A part of the area including 164a, a part of the area including the display unit 162, and a part of the area including the end 4 shows an example of a cross section of the

[0114] The display device 100A shown in FIG. 10 includes a transistor 201 between a substrate 151 and a substrate 152. , transistor 205, transistor 206, light emitting device 190 and light receiving device 1 He has 10th place.

[0115] The substrate 152 and the insulating layer 214 are bonded to each other via an adhesive layer 142. A solid sealing structure or a hollow sealing structure can be applied to seal the light receiving device 110 and the light receiving device 110. The space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas. The adhesive layer 1 is filled with a gas (such as nitrogen or argon) and has a hollow sealing structure. 42 may be provided overlapping the light emitting device 190. In addition, the substrate 152, the adhesive layer The area surrounded by the adhesive layer 142 and the insulating layer 214 may be filled with a resin different from that of the adhesive layer 142. stomach.

[0116] The light-emitting device 190 includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light-emitting layer 19. 3, a common layer 114 and a common electrode 115 are laminated in this order. 91 is a conductive layer 2 of the transistor 206 through an opening in the insulating layer 214. 22b. Transistor 206 controls the driving of light emitting device 190. The edge of the pixel electrode 191 is covered with a partition wall 216.

[0117] The light receiving device 110 includes, from the insulating layer 214 side, a pixel electrode 111, a common layer 112, a photoelectric conversion layer The pixel electrode has a laminated structure in which a pixel electrode 113, a common layer 114 and a common electrode 115 are laminated in this order. The electrode 111 is connected to the conductive layer of the transistor 205 through an opening in the insulating layer 214. The end of the pixel electrode 111 is covered with a partition wall 216. It is believed that.

[0118] The light emitted by the light emitting device 190 is emitted toward the substrate 152. Light is incident on the substrate 152 through the space 143. It is preferable to use a material that is highly transparent to infrared light and near infrared light.

[0119] The pixel electrode 111 and the pixel electrode 191 can be manufactured using the same material and in the same process. The common layer 112, the common layer 114 and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device 112. The light receiving device 110 and the light emitting device 190 are both used as the light receiving device 110 and the light emitting device 190. The photoelectric conversion layer 113 and the light emitting layer 193 are different in configuration, but all the other layers can have the same configuration. This allows the display device 100A to include a light-receiving device without significantly increasing the number of manufacturing steps. 110 can be built in.

[0120] A light-shielding layer 148 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 148 is The light receiving device 110 and the light emitting device 190 have openings at positions overlapping each other. In addition, a filter 149 for cutting visible light is provided at a position overlapping the light receiving device 110. It should be noted that a configuration without the filter 149 may also be used.

[0121] The transistor 201, the transistor 205, and the transistor 206 are all substrate These transistors are formed on the same substrate 151 using the same materials and processes. It can be made by

[0122] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The gate insulating layer is formed to cover the gate electrodes and functions as a planarization layer. The number of insulating layers covering the transistor is not limited, and each may be a single layer or two or more layers. stomach.

[0123] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such as a fluorine-containing compound. This allows the insulating layer to function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0124] The insulating layers 211, 213, and 215 are preferably made of inorganic insulating films. Examples of the inorganic insulating film include a silicon nitride film, a silicon oxynitride film, and a silicon oxide film. A silicon oxide film, a silicon nitride film, an aluminum oxide film, or an aluminum nitride film is used. Alternatively, a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, an oxide film, Gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film Alternatively, a neodymium oxide film may be used. In addition, two or more of the above insulating films may be laminated. stomach.

[0125] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, etc. resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0126] Here, organic insulating films often have a lower barrier property against impurities than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This prevents impurities from diffusing from the end of the display device 100A through the organic insulating film. Alternatively, the end of the organic insulating film may be located inside the end of the display device 100A. The organic insulating film is formed so as to be positioned so that the organic insulating film is not exposed at the edge of the display device 100A. This may be done.

[0127] In the region 228 shown in FIG. 10, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the layer 214, the display unit 1 can be exposed from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved. It can be done.

[0128] The transistors 201, 205, and 206 have gates A conductive layer 221 that functions as a gate insulating layer, an insulating layer 211 that functions as a source and drain insulating layer, The conductive layer 222a and the conductive layer 222b functioning as gate electrodes, the semiconductor layer 231, and the gate insulating layer The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. In this example, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. is located between the conductive layer 223 and the semiconductor layer 231.

[0129] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses transistors of the same type, staggered type, inverted staggered type, etc. In addition, the present invention can be applied to any of the top-gate and bottom-gate transistor structures. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. Good too.

[0130] The transistors 201, 205, and 206 have channels. The structure in which the semiconductor layer formed by the MOSFET is sandwiched between two gates is applied. and driving the transistors by supplying the same signal to them. A potential is applied to one of the two gates to control the threshold voltage of the transistor. A driving potential may be applied to the other one.

[0131] The crystallinity of the semiconductor material used in the transistor is not particularly limited, and may be an amorphous semiconductor, a single Crystalline semiconductors or semiconductors with crystallinity other than single crystal (microcrystalline semiconductors, polycrystalline semiconductors, Either a single crystal semiconductor or a semiconductor having a crystal region in part may be used. It is preferable to use a crystalline semiconductor since this can suppress deterioration of the transistor characteristics.

[0132] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. is amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.) ) etc.

[0133] The semiconductor layer may be, for example, a combination of indium and M (where M is gallium, aluminum, silicon, or phosphide). Uranium, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Manium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum one or more selected from the group consisting of tantalum, tungsten, and magnesium) and zinc In particular, M is aluminum, gallium, yttrium, and and tin.

[0134] In particular, indium (In), gallium (Ga), and zinc (Zn) are used as the semiconductor layer. It is preferable to use an oxide containing IGZO (also referred to as IGZO).

[0135] When forming a film of In-M-Zn oxide by sputtering, the sputtering target is In the sputtering, the atomic ratio of In is preferably equal to or greater than the atomic ratio of M. The atomic ratio of the metal elements in the ring target is In:M:Zn=1:1:1, In:M :Zn=1:1:1.2, In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5: 1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M:Zn= 6:1:6, In:M:Zn=5:2:5, etc.

[0136] When a sputtering target containing a polycrystalline oxide is used, the crystal In addition, the atomic structure of the semiconductor layer to be formed is preferably such that the atomic structure of the semiconductor layer to be formed is easily formed. The atomic ratio is the plus or minus of the atomic ratio of the metal elements contained in the sputtering target. For example, the composition of the sputtering target used for the semiconductor layer is I When the atomic ratio is n:Ga:Zn=4:2:4.1, the composition of the semiconductor layer is I The atomic ratio may be close to n:Ga:Zn=4:2:3.

[0137] In addition, when the atomic ratio is described as In:Ga:Zn=4:2:3 or in the vicinity, When the atomic ratio is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or less. Including the above 4 or less. Also, the atomic ratio is In:Ga:Zn=5:1:6 or When describing it as being close to the In atomic ratio, the Ga atomic ratio is 0.1 when the In atomic ratio is 5. The atomic ratio of Zn is 5 to 7. When describing the numerical ratio as In:Ga:Zn=1:1:1 or close to it, When the atomic ratio is 1, the atomic ratio of Ga is greater than 0.1 and less than 2, and the atomic ratio of Zn is This includes cases where the ratio is greater than 0.1 and less than or equal to 2.

[0138] The transistors in the circuit 164a and the transistors in the display portion 162 have the same structure. The circuit 164a may have a structure similar to that of the transistor 161, or may have a different structure. The structures of the display units 162 may all be the same, or there may be two or more types. The structures of the multiple transistors in the semiconductor device may all be the same, or there may be two or more types. stomach.

[0139] A connection portion 204 is provided on the substrate 151 in an area where the substrate 152 does not overlap. In the portion 204, the wiring 165 is connected to the FPC 172a via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is processed with the same conductive film as the pixel electrode 191. The conductive layer 166 thus obtained is exposed. can be electrically connected via a connection layer 242.

[0140] Various optical members can be arranged on the outside of the substrate 152. Examples of the optical members include a polarizing plate. Examples of such materials include retardation films, light diffusion layers (such as diffusion films), anti-reflection layers, and light-collecting films. The outside of the substrate 152 is provided with an antistatic film to prevent dust from adhering, and a It also has a water-repellent film that makes it hard to damage the surface, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0141] The substrate 151 and the substrate 152 are made of glass, quartz, ceramic, sapphire, resin, etc. It can be used.

[0142] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as elastomeric adhesives, anaerobic adhesives, etc. can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl chloride) resin, PVB (Polyvinyl butyral) resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low adhesion is preferable. Two-part mixed resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0143] The connection layer 242 is an anisotropic conductive film (ACF). ductive film), anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0144] The light emitting device 190 may be a top-emitting type, a bottom-emitting type, a dual-emitting type, or a In one embodiment of the present invention, a top emission type is preferable. However, the light emitting surface of the light emitting device 190 and the light receiving surface of the light receiving device 110 are oriented in the same direction. By doing so, other configurations can also be applied.

[0145] The light emitting device 190 includes at least a light emitting layer 193. As layers other than the layer 193, a material having a high hole injection property, a material having a high hole transport property, a hole blocking material, Materials, substances with high electron transport properties, substances with high electron injection properties, or bipolar substances (electron transport The layer may further include a layer containing a substance having high electron transport and hole transport properties. Layer 112 preferably includes one or both of a hole injection layer and a hole transport layer. For example, the common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer. I wish.

[0146] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low molecular weight compounds and high molecular weight compounds. The common layer 112 and the light-emitting layer may be made of any of the above-mentioned materials, and may contain inorganic compounds. The layers constituting the common layer 114 and the 193 can be formed by deposition (including vacuum deposition), transfer, printing, etc. The deposition method can be performed by a method such as a deposition method, an ink jet method, or a coating method.

[0147] The light-emitting layer 193 may contain an inorganic compound such as quantum dots as a light-emitting material.

[0148] The photoelectric conversion layer 113 of the light receiving device 110 includes a semiconductor. Inorganic semiconductors such as fluorine, or organic semiconductors containing organic compounds can be used. In this embodiment, an organic semiconductor is used as the semiconductor of the photoelectric conversion layer 113. By using a semiconductor, the light emitting layer 193 of the light emitting device 190 and the light receiving device 110 The electric conversion layer 113 can be formed by the same method (for example, vacuum deposition method), and the manufacturing equipment This is preferable because it allows the above to be common.

[0149] The n-type semiconductor material of the photoelectric conversion layer 113 is fullerene (e.g., C 60 , C7 0, etc.) or their derivatives. The p-type semiconductor material of the layer 113 is copper (II) phthalocyanine. (II) phthalocyanine (CuPc) and tetraphenyldibenzoperidin Lanthene (Tetraphenyldibenzoperiflanthene; DBP ), zinc phthalocyanine (ZnPc), etc. Examples of such materials include organic semiconductor materials that are electron donating.

[0150] For example, the photoelectric conversion layer 113 can be formed by co-evaporating an n-type semiconductor and a p-type semiconductor. Cut.

[0151] In addition to the gate, source and drain of the transistor, various wiring and Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and the like. , nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples of the metals that can be used include metals such as tin, tin oxide, and alloys that contain these metals as the main components. The film containing the above material can be used as a single layer structure or a laminate structure.

[0152] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium. Conductive oxides such as zinc oxide, zinc oxide, zinc oxide containing gallium, etc., or graphene Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium and titanium, In addition, an alloy material containing the metal material can be used. Alternatively, nitriding of the metal material can be used. Materials such as titanium nitride may also be used. In the case of using such a nitride, it is preferable to make it thin enough to have light transmitting properties. A laminated film of the above materials can be used as the conductive layer. For example, an alloy of silver and magnesium A laminated film of indium tin oxide and indium tin oxide is preferably used because it can increase the electrical conductivity. These are the various wirings, conductive layers such as electrodes, and display elements that constitute the display device. The conductive layer may also be used as a conductive layer that functions as a pixel electrode or a common electrode.

[0153] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0154] FIG. 11A shows a cross-sectional view of the display device 100B. The display device 100B has a protective layer 195. The main difference between the display device 100A and the display device 100B is that.

[0155] By providing a protective layer 195 that covers the light receiving device 110 and the light emitting device 190, The diffusion of impurities such as water into the receiving device 110 and the light-emitting device 190 is suppressed, and The reliability of the optical device 110 and the light emitting device 190 can be improved.

[0156] In a region 228 near the end of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 195 are in contact with each other. This suppresses the diffusion of impurities from the outside into the display section 162 via the organic insulating film. This makes it possible to improve the reliability of the display device 100B.

[0157] 11B shows an example of a three-layer structure of the protective layer 195. The protective layer 195 is an inorganic insulating layer 195a on the insulating layer 195b; an organic insulating layer 195b on the inorganic insulating layer 195a; It has an inorganic insulating layer 195c on 195b.

[0158] The end of the inorganic insulating layer 195a and the end of the inorganic insulating layer 195c are aligned with the end of the organic insulating layer 195b. The inorganic insulating layer 195a extends outward from the insulating layer 21. Through the opening of 4 (organic insulating layer), the insulating layer 215 (inorganic insulating layer) comes into contact with the insulating layer 215. The insulating layer 215 and the protective layer 195 surround the light receiving device 110 and the light emitting device 190. Therefore, the reliability of the light receiving device 110 and the light emitting device 190 can be improved. can be done.

[0159] In this way, the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends outward beyond the end of the organic insulating film.

[0160] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 adheres the light receiving device 110 and the light emitting device 190 to each other. They are provided one on top of the other, and a solid sealing structure is applied to the display device 100B.

[0161] FIG. 12A shows a cross-sectional view of the display device 100C. The display device 100C has a transistor structure. The display device 100 differs from the display device 100B mainly in that the light shielding layer 148 is not provided.

[0162] The display device 100C includes a transistor 208, a transistor 209, and a It has a transistor 210.

[0163] Transistor 208, transistor 209, and transistor 210 function as gates. A conductive layer 221 serving as a gate insulating layer, an insulating layer 211 serving as a gate insulating layer, and a channel forming region A semiconductor layer having a pair of low resistance regions 231i and a pair of low resistance regions 231n, n, and a conductive layer 222a connected to the other of the pair of low resistance regions 231n. layer 222b, an insulating layer 225 acting as a gate insulating layer, and a conductive layer 226 acting as a gate. The insulating layer 211 is a layer 223 that covers the conductive layer 223, and the insulating layer 215 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i. It is located between the hole formation region 231i.

[0164] The conductive layer 222a and the conductive layer 222b are respectively connected to the insulating layer 225 and the insulating layer 215. The conductive layer 222a is connected to the low resistance region 231n through the opening. One of the electrodes 222b functions as a source and the other functions as a drain.

[0165] The pixel electrode 191 of the light-emitting device 190 is connected to the transistor 208 via the conductive layer 222b. It is electrically connected to one of the pair of low resistance regions 231n.

[0166] The pixel electrode 111 of the light receiving device 110 is connected to the transistor 209 via the conductive layer 222b. It is electrically connected to the other of the pair of low resistance regions 231n.

[0167] 12A shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer. In B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, and a low resistance region For example, the conductive layer 223 is used as a mask. By processing the insulating layer 225, the structure shown in FIG. 12B can be produced. An insulating layer 215 is provided over the layer 225 and the conductive layer 223, and the insulating layer 215 is opened to expose the conductive layer 223. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n. Furthermore, an insulating layer 218 may be provided to cover the transistor.

[0168] FIG. 13 shows a cross-sectional view of the display device 100D. The display device 100D has a different substrate configuration. The main difference from the display device 100C is as follows.

[0169] The display device 100D does not have the substrate 151 and the substrate 152, but has the substrates 153, 154, It has an adhesive layer 155 and an insulating layer 212 .

[0170] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and protective layer 195 are attached to each other by adhesive layer 142.

[0171] The display device 100D includes an insulating layer 212, a transistor 208, and a transistor 209 formed on a fabrication substrate. The transistor 209, the light receiving device 110, the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are flexible. This makes it possible to impart flexibility to the display device 100D.

[0172] The insulating layer 212 can be used for the insulating layers 211, 213, and 215. Alternatively, the insulating layer 212 may be a combination of an organic insulating film and an inorganic insulating film. In this case, the film on the transistor 209 side may be an inorganic insulating film. is preferred.

[0173] The above is a description of the configuration example of the display device.

[0174] The display device of this embodiment has a light receiving device and a light emitting device in a display portion. The display has both the function of displaying an image and the function of detecting light. This allows for a smaller and lighter electronic device compared to a case where a sensor is provided outside the display device. In addition, it is possible to combine it with a sensor provided outside the display unit or the display device. This makes it possible to realize electronic devices with more functions.

[0175] The light receiving device has at least one layer other than the photoelectric conversion layer in common with the light emitting device (EL element). Furthermore, the light receiving device may have a structure in which all layers other than the photoelectric conversion layer are light emitting. It may have a common structure with the optical device (EL element). For example, By simply adding the process of depositing a photoelectric conversion layer, light-emitting devices and light-receiving devices can be fabricated on the same substrate. The light receiving device and the light emitting device can be formed on the pixel electrode and the The common electrode can be formed of the same material and in the same process. The circuit electrically connected to the light-emitting device and the circuit electrically connected to the light-emitting device are made of the same material and By manufacturing the display device in a single process, the manufacturing process of the display device can be simplified. Even if the display device does not have a built-in light receiving device, it is possible to manufacture a highly convenient display device. do.

[0176] Metal oxides that can be used for the semiconductor layer of a transistor will be described below.

[0177] In this specification, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). For example, zinc oxynitride (ZnON) may be used. Any nitrogen-containing metal oxide may be used for the semiconductor layer.

[0178] In this specification, CAAC (c-axis aligned crystal ), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents an example of a function or material configuration. .

[0179] For example, the semiconductor layer is made of CAC (Cloud-Aligned Composite) OS (Oxide Semiconductor) can be used.

[0180] CAC-OS or CAC-metal oxide is a material that has the function of electrical conductivity. A part of the material has an insulating function, and the whole material has a semiconductor function. Note that CAC-OS or CAC-metal oxide is used as a semiconductor for transistors. When used in a layer, the conductive function is to allow the flow of electrons (or holes) that serve as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the function of the material and the function of the material complement each other, the material can be switched (On / Off). ff function) to CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, By separating the functions, the functionality of both can be maximized.

[0181] In addition, CAC-OS or CAC-metal oxide is used in conductive areas and insulating areas. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a gap in the material. In addition, the conductive regions are observed as connected clouds with blurred edges. This may be the case.

[0182] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0183] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on-state, i.e., a large on-current. And high field effect mobility can be obtained.

[0184] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a composite matrix.

[0185] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single-crystal oxide semiconductor, for example, CAAC-OS (ca xis aligned crystalline oxide semiconductor tor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and non and amorphous oxide semiconductors.

[0186] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is the area where multiple nanocrystals are connected. In the above, the direction of the lattice arrangement is changed between an area with a uniform lattice arrangement and another area with a uniform lattice arrangement. This refers to the point where the sound changes.

[0187] Nanocrystals are basically hexagonal, but are not limited to regular hexagons and may be non-regular hexagons. In addition, the distortion may have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries are not observed even in the vicinity of the strain. It is difficult to confirm the presence of the lattice distortion. This is because the CAAC-OS has a lattice structure in the ab-plane direction. The oxygen atoms are not densely packed, and the bond distance between atoms is shortened by the substitution of metal elements. This is because the distortion can be tolerated by changing the frequency band.

[0188] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter, the In layer) and an element A layered crystal structure in which layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are stacked. Indium and element M tend to have a layered structure. It is possible, and when the element M in the (M,Zn) layer is replaced with indium, (In,M,Zn) Also, when the indium in the In layer is replaced with element M, (In,M ) layer.

[0189] CAAC-OS is a metal oxide with high crystallinity. On the other hand, CAAC-OS has no clear crystallinity. Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is not suitable for impurities or defects (oxygen vacancies (VO :oxygen va It can also be said to be a metal oxide with low levels of . Metal oxides with OS have stable physical properties. Therefore, Metal oxides are heat resistant and highly reliable.

[0190] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0191] Indium gallium oxide, a type of metal oxide containing indium, gallium, and zinc, is In the case of IGZO, the nanocrystals mentioned above provide a stable structure. In particular, IGZO tends to have difficulty growing crystals in the air, Small crystals (e.g., crystals of a few mm or cm) are more difficult to measure than large crystals (here, crystals of a few mm or cm). , the nanocrystals mentioned above) may be structurally more stable.

[0192] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. e-OS has a lower crystallinity than nc-OS and CAAC-OS.

[0193] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik e OS, nc-OS, and CAAC-OS may be present in two or more types.

[0194] The metal oxide film that functions as the semiconductor layer is heated in either an inert gas or oxygen gas, or The metal oxide film can be formed by sputtering using both. There is no particular limitation on the oxygen flow rate (oxygen partial pressure) in the above. However, In the case of obtaining a transistor, the flow rate ratio of oxygen during the deposition of a metal oxide film (oxygen Partial pressure) is preferably 0% or more and 30% or less, more preferably 5% or more and 30% or less, and more preferably 7% or less. The upper 15% or less is even more preferable.

[0195] The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. More preferably, the energy is 3 eV or more, and even more preferably, the energy is 3 eV or more. By using metal oxides with a wide energy gap, the off-state current of transistors can be reduced. This can be done.

[0196] The transistors using the above metal oxides have a current of several yA / μm (current per 1 μm of channel width). In addition, the transistor using metal oxide exhibits extremely low off-current characteristics. Transistors are subject to impact ionization, avalanche breakdown, and short channel effects. It has characteristics different from silicon transistors, such as the absence of a junction, and can form highly reliable circuits. In addition, the problem of non-uniformity in crystallinity, which is a problem with Si-based transistors, can be eliminated. Transistors using metal oxide are also less likely to have variations in electrical characteristics.

[0197] The substrate temperature during the deposition of the metal oxide film is preferably 350°C or less, and more preferably from room temperature to 200°C or less. The substrate temperature during the formation of the metal oxide film is preferably from room temperature to 130° C. If the temperature is room temperature, the productivity can be increased, which is preferable.

[0198] Metal oxide films are formed by sputtering, PLD, PECVD, thermal CVD, and MOCVD. The film can be formed by a method such as a deposition method, an ALD method, or a vacuum deposition method.

[0199] This concludes the explanation of metal oxides.

[0200] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0201] (Embodiment 2) In this embodiment, a pixel circuit included in a display device according to one embodiment of the present invention will be described.

[0202] The pixel of the display device according to one embodiment of the present invention has subpixels 11, 12, and 13. The pixel circuit PIX1 has a light emitting device that emits visible light. The pixel circuit PIX3 of the subpixel 13 has a light-emitting device that emits near-infrared light. The device has

[0203] FIG. 14A shows an example of a pixel circuit PIX1 of the subpixel 11. A transistor EL1, a transistor M1, a transistor M2, a transistor M3, and a capacitor Here, an example is shown in which a light emitting diode is used as the light emitting device EL1. It is preferable to use an organic EL element that emits visible light for the light emitting device EL1. .

[0204] The transistor M1 has a gate electrically connected to the wiring G1 and a source or a drain is electrically connected to the wiring S1, and the other of the source and the drain is The source of the transistor M2 is electrically connected to the electrode and the gate of the transistor M2. One of the drain and the drain is electrically connected to the wiring V2, and the other is connected to the anode of the light-emitting device EL1. and electrically connected to one of the source and drain of the transistor M3. The gate of the transistor M3 is electrically connected to the wiring G2, and the other of the source and drain is connected to the wiring V0 The cathode of the light emitting device EL1 is electrically connected to the wiring V1.

[0205] A constant potential is supplied to the wiring V1 and the wiring V2. Light can be emitted by setting the node side at a high potential and the cathode side at a low potential. The transistor M1 is controlled by a signal supplied to the wiring G1 to control the selection state of the pixel circuit PIX1. The transistor M2 also functions as a selection transistor to control the The transistor controls the current flowing through the light-emitting device EL1 according to the applied potential. It works like this.

[0206] When the transistor M1 is in a conductive state, the potential supplied to the wiring S1 is The luminance of the light emitting device EL1 can be controlled according to the potential. The transistor M3 is controlled by a signal supplied to the wiring G2. The potential between the transistor M3 and the light-emitting device EL1 is a constant potential supplied from the wiring V0. The source potential of transistor M2 can be stabilized and the transistor can be reset to the A potential can be written to the gate of transistor M2.

[0207] FIG. 14B shows an example of the pixel circuit PIX2 of the subpixel 12. The pixel circuit PIX2 has a boost function. The pixel circuit PIX2 includes a light emitting device EL2, a transistor M4, and a transistor M 5, transistor M6, transistor M7, capacitor C2 and capacitor C3 Here, an example is shown in which a light emitting diode is used as the light emitting device EL2. The optical device EL2 is preferably an organic EL element that emits near-infrared light. The PIX2 has a boosting function to emit near-infrared light at high brightness.

[0208] The transistor M4 has a gate electrically connected to the wiring G1 and a source or drain is electrically connected to the wiring S4, and the other of the source or drain is The electrode is electrically connected to one electrode of the capacitor C3 and the gate of the transistor M6. The transistor M5 has a gate electrically connected to the wiring G3 and a source or drain The other of the source and drain is electrically connected to the other of the capacitor C3. The electrode is electrically connected to the electrode.

[0209] One of the source and drain of the transistor M6 is electrically connected to the wiring V2, and the other is The anode of the light emitting device EL2 and one of the source and drain of the transistor M7 The gate of the transistor M7 is electrically connected to the wiring G2, and the source The other of the drain and the cathode of the light-emitting device EL2 is electrically connected to the wiring V0. Electrically connect to wiring V1.

[0210] The transistor M4 is controlled by a signal supplied to the wiring G1, and the transistor M5 is controlled by a signal supplied to the wiring G2. Transistor M6 is controlled by a signal supplied to line G3. It functions as a driving transistor that controls the current flowing through the light-emitting device EL2 depending on the .

[0211] The luminance of the light emitting device EL2 is controlled according to the potential supplied to the gate of the transistor M6. The transistor M7 is controlled by a signal supplied to the wiring G2. The potential between the transistor M6 and the light-emitting device EL2 is supplied from a constant line V0. The source potential of transistor M6 can be stabilized and the transistor can be reset to the It is possible to write a potential to the gate of the transistor M6. Also, the potential is supplied from the wiring V0. The potential of the light emitting device is set to the same potential as the wiring V1 or a lower potential than the wiring V1. The light emission of the EL2 can be suppressed.

[0212] In the pixel circuit PIX2, in order to increase the light emission intensity of the light emitting device EL2, a transistor M6 It is preferable to supply a high voltage to the gate of the pixel circuit PIX2. Explain the function.

[0213] First, the potential “D1” of the wiring S4 is applied to the gate of the transistor M6 via the transistor M4. At the same time, the other electrode of the capacitor C3 is supplied with a voltage via the transistor M5. and the reference potential “V ref At this time, the capacitor C3 is supplied with “D1-V ref " is held. Next, the gate of transistor M6 is floated, and transistor The potential "D2" of the wiring S5 is supplied to the other electrode of the capacitor C3 via M5. , potential "D2" is a potential for addition.

[0214] At this time, the capacitance value of the capacitor C3 is C3, the capacitance value of the capacitor C2 is C2, The gate capacitance of M6 is C M6 Then, the gate potential of transistor M6 is D1+ (C3 / (C3+C2+C M6 ))×(D2-V ref )) where the value of C3 is C2+C M6 If we assume that the value is sufficiently larger than the value of C3 / (C3+C2+C M6 )teeth 1. Therefore, the potential of the gate of the transistor M6 is “D1 + (D2 - V re f )” and D1=D2, so V ref If =0, then “D 1+(D2-V ref ))”=“2D1”.

[0215] In other words, if the circuit is designed appropriately, a potential approximately twice as large as the potential that can be input from wiring S4 or S5 can be input. This allows a potential to be supplied to the gate of transistor M6.

[0216] This function makes it possible to generate a high voltage even when using a general-purpose driver IC. Therefore, the light emitting device EL2 can emit light with high luminance.

[0217] The pixel circuit PIX2 may have a configuration shown in FIG. The pixel circuit PIX2 differs from the pixel circuit PIX2 shown in FIG. 14B in that it includes a transistor M8. The gate of the transistor M8 is electrically connected to the wiring G1, and one of the source and drain The other electrode of the capacitor C3 is connected to the other source or drain of the transistor M5. The other of the source and drain is electrically connected to the wiring V0. In addition, one of the source and the drain of the transistor M5 is connected to the wiring S4.

[0218] In the pixel circuit PIX2 shown in FIG. An operation is performed to supply the potential and the potential for addition to the other electrode of the capacitor C3. In this case, two wirings S4 and S5 are required, and the wiring S5 alternately supplies the reference potential and the potential for addition. It needs to be rewritten.

[0219] In the pixel circuit PIX2 shown in FIG. 14C, the transistor M8 is increased, but the transistor M8 is not used to supply the reference potential. Since a dedicated path is provided for the transistor, the wiring S5 can be reduced. The gate of M8 can be connected to the wire G1, and the wire that supplies the reference potential is wire V0. Therefore, the number of wirings connected to the transistor M8 does not increase. Since there is no need to alternately rewrite the reference potential and the potential for addition via wiring, it operates at high speed with low power consumption. It is possible to create

[0220] In addition, in FIG. 14B and FIG. 14C, the reference potential “V ref " and the inversion potential of "D1" In this case, a potential about three times the potential that can be input from the wiring S4 or S5 can be used. This means that the inversion potential can be supplied to the gate of the transistor M6. The absolute value of the difference between the potential and the original potential is the same (or approximately the same), but the potential is different from the original potential. If the original potential is "D1", the inverted potential is "D1B", and the reference potential is V0, then V0 = The relationship should be (D1+D1B) / 2.

[0221] In addition, a configuration in which the light emitting device EL2 emits light using the pixel circuit PIX1 is used for the sub-pixel 12. You can also be there.

[0222] In the display device of the present embodiment, an image is displayed by making the light emitting device emit light in a pulsed manner. By shortening the driving time of the light-emitting device, the power consumption of the display device can be reduced, and In particular, organic EL elements have excellent frequency characteristics, The frequency can be, for example, 1 kHz or more and 100 MHz or less.

[0223] FIG. 14D shows an example of the pixel circuit PIX3 of the subpixel 13. PD, transistor M9, transistor M10, transistor M11, transistor M12 and a capacitor C4. Here, a photodiode is used as the light receiving device PD. An example using ode is shown.

[0224] The light receiving device PD has an anode electrically connected to the wiring V1 and a cathode connected to the transistor M The transistor M9 is electrically connected to either the source or drain of the transistor M1. Electrically connected to the line G4, the other of the source or drain is one electrode of the capacitor C4, One of the source or drain of the transistor M10 and the gate of the transistor M11 The transistor M10 has a gate electrically connected to the wiring G5 and a source The other of the drains is electrically connected to the wiring V2. Either the source or the drain is electrically connected to the wiring V3, and the other of the source or the drain is connected to the transistor. The transistor M12 is electrically connected to either the source or the drain of the transistor M12. The gate is electrically connected to the wiring G6, and the other of the source and the drain is electrically connected to the wiring OUT. Connect to the target.

[0225] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When D is driven with a reverse bias, a potential higher than the potential of the wire V1 is applied to the wire V2. The transistor M10 is controlled by a signal supplied to the wiring G5. A function to reset the potential of the node connected to the gate of the transistor M11 to the potential supplied to the wiring V2. The transistor M9 is controlled by a signal supplied to the wiring G4. The function of controlling the timing at which the potential of the above nodes changes depending on the current flowing through the PD is The transistor M11 is an amplifier transistor that outputs an output according to the potential of the node. The transistor M12 is controlled by a signal supplied to the wiring G6. A selection transistor is connected to the OUT line to read the output according to the potential of the node by an external circuit. It functions as a transistor.

[0226] Here, the transistors M1 to M12 included in the pixel circuits PIX1 to PIX3 are These transistors use metal oxide (oxide semiconductor) in the semiconductor layer where the channel is formed. It is preferred to apply

[0227] A transistor using metal oxides that has a wider band gap and a lower carrier density than silicon. The transistor can realize an extremely small off-current. The charge stored in the capacitor connected in series with the transistor is discharged over a long period of time by the It is possible to hold it by this.

[0228] Therefore, in particular, the capacitor C1, the capacitor C2, the capacitor C3 or the capacitor C4 A transistor M1, a transistor M4, transistor M5, transistor M8, transistor M9 and transistor M1 It is preferable to use a transistor including an oxide semiconductor for the subpixel 13. The use of a transistor using an oxide semiconductor makes the circuit configuration and operation method more complex. By applying the global shutter method, charge accumulation is performed simultaneously in all pixels without any need for a This can be done.

[0229] In addition, other transistors may also be formed using an oxide semiconductor. This can reduce the manufacturing cost.

[0230] In addition, silicon is used as a semiconductor in which channels are formed in the transistors M1 to M12. In particular, a crystalline silicon transistor such as a single crystal silicon transistor or a polycrystalline silicon transistor can be used. By using silicon with high electrical conductivity, high field effect mobility can be achieved, resulting in faster This is preferable because it enables a more efficient operation.

[0231] In addition, at least one of the transistors M1 to M12 is a transistor including an oxide semiconductor. Alternatively, a transistor using silicon may be used.

[0232] 14A to 14D show an example in which an n-channel transistor is used. However, a p-channel transistor can also be used.

[0233] A transistor included in the pixel circuit PIX1, a transistor included in the pixel circuit PIX2, and The transistors of the pixel circuit PIX3 are preferably formed side by side on the same substrate. In addition, among the wirings connected to the pixel circuits PIX1 to PIX3, In D, the wirings indicated with a common symbol may be common wirings.

[0234] In addition, in a position overlapping with the light receiving device PD, the light emitting device EL1 or the light emitting device EL2, One or more layers having transistors and / or capacitors are provided. This makes it possible to reduce the effective area occupied by each pixel circuit, and thus to realize high-definition light receiving A display unit or a display section can be realized.

[0235] FIG. 15 shows subpixels 11 (subpixels 11R, 11G, and 11B) included in pixel 10. 1, the wirings G1 to G3 are connected to the gate driver (FIG. 1, circuit 16). The wirings S1 to S4 can be electrically connected to a driver (circuit 18 in FIG. 1). The wiring OUT can be electrically connected to the color driver (circuit 15 in FIG. 1). The driver (circuit 17 in Fig. 1) and the readout circuit (circuit 19 in Fig. 1) are electrically connected to the It is possible.

[0236] A power supply circuit that supplies a constant potential can be electrically connected to the wirings V0 to V3. A low potential can be supplied to the wirings V0 and V1, and a high potential can be supplied to the wirings V2 and V3. 4 may be electrically connected to a circuit that supplies a constant potential instead of a source driver. Moreover, the wiring V2 and the wiring V3 may be common.

[0237] As shown in FIG. 16, the cathode of the light receiving device PD of the subpixel 13 is electrically connected to the wiring V1. The other of the source and drain of the transistor M10 is electrically connected to the wiring V4. In this case, the potential supplied to the wiring V4 is lower than the potential supplied to the wiring V1. An electrical potential can be applied.

[0238] In one embodiment of the present invention, the subpixels 11, 12, and 13 share a power supply line, etc. can be done.

[0239] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0240] (Embodiment 3) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0241] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be used as the display portion. has the function of detecting light, so it can perform input operations regardless of whether it is contact or non-contact. In addition, biometric authentication can be performed by utilizing the imaging function of the display unit. This can improve the functionality and convenience of the device.

[0242] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0243] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0244] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0245] The electronic device 6500 shown in FIG. 17A is a portable information device that can be used as a smartphone. It is a terminal device.

[0246] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0247] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0248] FIG. 17B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0249] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. In the space surrounded by the protective member 6510, a display panel 6511, an optical member 6512, a touch panel 6513, and a touch panel 6514 are arranged. A sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0250] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The display panel 6511 is fixed to the display panel 6513 by an adhesive layer (not shown). The display device of one embodiment of the present invention can be applied to the When used, the touch sensor panel 6513 may be omitted.

[0251] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The folded part is connected to the FPC6515. C6516 is mounted on the FPC6515. is connected to a child.

[0252] The flexible display device according to one embodiment of the present invention can be applied to the display panel 6511. Therefore, it is possible to realize an extremely lightweight electronic device. Because it is thin, it can accommodate a large-capacity battery 6518 while keeping the thickness of the electronic device to a minimum. In addition, a part of the display panel 6511 is folded back and the FPC 6515 is attached to the back side of the pixel area. By arranging the connection portion, an electronic device with a narrow frame can be realized.

[0253] An example of a television device is shown in FIG. 18A. The television device 7100 has a housing 7101. The display unit 7000 is built into the housing 7101. This shows a configuration in which the above is supported.

[0254] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0255] The television device 7100 shown in FIG. 18A is operated by an operation switch provided on the housing 7101. Or, it can be done by a separate remote control operation device 7111. The touch sensor or near-touch sensor is activated, and a finger or the like touches the display unit 7000. The television device 7100 may be operated by touching the remote control device 7 111 may have a display unit for displaying information output from the remote control unit 7111. The remote control unit 7111 has operation keys or a touch panel, which allows the user to select channels and The image displayed on the display unit 7000 can be controlled by the Cut.

[0256] The television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. It can also receive TV broadcasts by wire or by modem. By connecting to a wireless communication network, one-way (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0257] FIG. 18B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 721, and a 3, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. is.

[0258] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0259] 18C and 18D show an example of digital signage.

[0260] The digital signage 7300 shown in FIG. 18C includes a housing 7301, a display unit 7000, and It also has a speaker 7303, etc. In addition, it has an LED lamp, an operation key (power switch, It can have a variety of devices, including operation switches, connection terminals, sensors, microphones, etc. .

[0261] FIG. 18D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. do.

[0262] 18C and 18D, the display device of one embodiment of the present invention is applied to the display portion 7000. It is possible.

[0263] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0264] The touch sensor and near-touch sensor provided in the display unit 7000 are operated to display Not only can it display images or videos on the 7000 screen, but it also allows users to operate it intuitively. In addition, when using the service to obtain route information or traffic information, Intuitive operation can improve usability.

[0265] Also, as shown in FIG. 18C and FIG. 18D, a digital signage 7300 or a digital sign The Ineji 7400 is an information terminal device such as a smartphone 7311 or It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on 000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. In this way, the display on the display unit 7000 can be switched.

[0266] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It is possible to do so.

[0267] The electronic device shown in FIG. 19A to FIG. 19F includes a housing 9000, a display unit 9001, a speaker 90 03, operation keys 9005 (including a power switch or an operation switch), connection terminal 900 6. Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity (including functions for measuring degree, gradient, vibration, smell or infrared rays), microphone 90 08, etc.

[0268] The electronic devices shown in FIGS. 19A to 19F have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and processing by various software (programs) The functions to control the processing, wireless communication functions, and programs or data recorded on the recording medium The functions of electronic devices are not limited to these. The electronic device may have multiple display units. In addition, cameras and other devices can be installed in electronic devices to take still and moving images and store them on a recording medium (external or Even if the camera has a function to save the captured image on a computer (built into the camera) or to display the captured image on a display unit, good.

[0269] The electronic device shown in Figures 19A to 19F will be described in detail below. By using the display device of one embodiment of the present invention in the electronic device shown in FIG. 19F, input operation can be performed without contact. This becomes possible.

[0270] FIG. 19A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. 101 can display text and image information on its multiple sides. In FIG. 19A, three 9 shows an example of displaying an icon 9050. Also, information 9051 shown in a dashed rectangle is displayed. The information 9051 may be displayed on another surface of the display unit 9001. Notifications of incoming e-mails, SNS, and phone calls, titles of e-mails and SNS, sender names, dates and times, The information includes the time, battery level, antenna reception strength, etc. Or, information 9051 is displayed. An icon 9050 or the like may be displayed at the position where the icon is displayed.

[0271] 19B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a display The information display function is provided on three or more sides of the display unit 9001. 053, information 9054 is displayed on different sides. For example, the user When the mobile information terminal 9102 is stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his / her pocket, and can, for example, receive a call. It is possible to determine whether or not

[0272] FIG. 19C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 communicates with a headset capable of wireless communication, for example. In addition, the portable information terminal 9200 has a connection terminal 90 06 also enables data transmission between other information terminals and charging. The charging operation may be performed by wireless power supply.

[0273] 19D, 19E, and 19F are perspective views showing a foldable mobile information terminal 9201. FIG. 19D shows the mobile information terminal 9201 in an unfolded state, and FIG. 19F shows the mobile information terminal 9201 in a folded state. 19E is a perspective view showing a state in the middle of changing from one of FIG. 19D and FIG. 19F to the other. The portable information terminal 9201 is highly portable when folded, and has a seam-free design when unfolded. The display area of ​​the portable information terminal 9201 is large and has excellent visibility. 9001 is supported by three housings 9000 connected by hinges 9055 . For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less. do.

[0274] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together. [Explanation of symbols]

[0275] 10: pixel, 11: sub-pixel, 11B: sub-pixel, 11G: sub-pixel, 11R: sub-pixel, 12: Subpixel, 13: Subpixel, 14: Pixel array, 15: Circuit, 16: Circuit, 17: Circuit, 18 :Circuit, 19:Circuit, 20:Light source, 21:Light, 22:Light, 23a:Light, 23b:Reflected light, 23c: light, 23d: reflected light, 41: transistor, 42: transistor, 50A: display device, 50B: display device, 50C: display device, 50D: display device, 50E: display device, 6 0: object, 100A: display device, 100B: display device, 100C: display device, 100D : display device, 110: light receiving device, 111: pixel electrode, 112: common layer, 113: photoelectric Conversion layer, 114: common layer, 115: common electrode, 142: adhesive layer, 143: space, 148: Light-shielding layer, 149: filter, 151: substrate, 152: substrate, 153: substrate, 154: substrate , 155: Adhesive layer, 162: Display section, 164a: Circuit, 164b: Circuit, 165: Wiring, 165a: Wiring, 165b: Wiring, 166: Conductive layer, 172a: FPC, 172b: FP C, 173a: IC, 173b: IC, 180: light-emitting device, 182: buffer layer, 1 83: Light-emitting layer, 184: Buffer layer, 190: Light-emitting device, 191: Pixel electrode, 192 : Buffer layer, 193: Light emitting layer, 194: Buffer layer, 195: Protective layer, 195a: Inorganic Insulating layer, 195b: organic insulating layer, 195c: inorganic insulating layer, 201: transistor, 204 : Connection portion, 205: Transistor, 206: Transistor, 208: Transistor, 20 9: transistor, 210: transistor, 211: insulating layer, 212: insulating layer, 213: Insulating layer, 214: insulating layer, 215: insulating layer, 216: partition wall, 217: partition wall, 218: insulation layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: Insulating layer, 228: region, 231: semiconductor layer, 231i: channel forming region, 231n: low Resistance region, 242: connection layer, 6500: electronic device, 6501: housing, 6502: display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6 507: camera, 6508: light source, 6510: protective member, 6511: display panel, 651 2: Optical components, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6 517: Printed circuit board, 6518: Battery, 7000: Display, 7100: Television device, 7101: case, 7103: stand, 7111: remote control device, 7200: Notebook type personal computer, 7211: Case, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal, 7400: Digital sign 7401: Pillar, 7411: Information terminal, 9000: Housing, 9001: Display, 9 003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 90 08: Microphone, 9050: Icon, 9051: Information, 9052: Information, 905 3: Information, 9054: Information, 9055: Hinge, 9101: Mobile information terminal, 9102: Mobile Mobile information terminal, 9200: mobile information terminal, 9201: mobile information terminal

Claims

1. A display device having a subpixel, the subpixel includes a first transistor, a second transistor, a third transistor, a first capacitor, a second capacitor, and a light emitting device; The light-emitting device has a function of emitting near-infrared light, one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor; a gate of the second transistor is electrically connected to one electrode of the first capacitor; a gate of the second transistor is electrically connected to one electrode of the second capacitor; one of a source and a drain of the third transistor is electrically connected to the other electrode of the second capacitor; The subpixel has a function of controlling a current of the second transistor in response to a third potential that is boosted by supplying a first potential to one electrode of the first capacitor via the first transistor and a second potential to the other electrode of the second capacitor via the third transistor, thereby causing the light-emitting device to emit light.

2. In claim 1, each of the first to third transistors has a metal oxide in a channel formation region; The display device, wherein the metal oxide comprises In, Zn, and M (M is Al, Ti, Ga, Ge, Sn, Y, Zr, La, Ce, Nd, or Hf).

3. 3. An electronic device comprising: the display device according to claim 1; and a camera.

Images